TWI821564B - 利用可選擇表面黏著性轉移元件之轉移基材及轉移方法 - Google Patents

利用可選擇表面黏著性轉移元件之轉移基材及轉移方法 Download PDF

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TWI821564B
TWI821564B TW109117315A TW109117315A TWI821564B TW I821564 B TWI821564 B TW I821564B TW 109117315 A TW109117315 A TW 109117315A TW 109117315 A TW109117315 A TW 109117315A TW I821564 B TWI821564 B TW I821564B
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transfer
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王蘊達
索拉布 雷喬杜里
呂正平
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美商帕洛阿爾托研究中心公司
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Abstract

一種設備包括一轉移基材，該轉移基材具有二或更多個轉移元件。該等轉移元件之各者包括一黏著性元件，該黏著性元件在一第一溫度具有一第一表面黏著性及在一第二溫度具有一第二表面黏著性。該第二表面黏著性小於該第一表面黏著性。各轉移元件具有一熱元件，該熱元件可操作以回應於一輸入而改變該黏著性元件之一溫度。一控制器經耦合以提供該等輸入至該二或更多個轉移元件之該等熱元件，以使該等轉移元件之一子集回應於該等轉移元件之該子集的該第一表面黏著性與該第二表面黏著性之間的改變而選擇性地將物體固持至該轉移基材及從該轉移基材釋放該等物體

Description

利用可選擇表面黏著性轉移元件之轉移基材及轉移方法
本揭露係關於一種轉移基材，其利用可選擇表面黏著性元件。在一實施例中，一種設備包括一轉移基材，該轉移基材具有二或更多個轉移元件。該等轉移元件之各者包括一黏著性元件，該黏著性元件在一第一溫度具有一第一表面黏著性及在一第二溫度具有一第二表面黏著性。該第二表面黏著性小於該第一表面黏著性。各轉移元件具有一熱元件，該熱元件可操作以回應於一輸入而改變該黏著性元件之一溫度。一控制器經耦合以提供該等輸入至該二或更多個轉移元件之該等熱元件，以使該等轉移元件之一子集回應於該等轉移元件之該子集的該第一表面黏著性與該第二表面黏著性之間的改變而選擇性地將物體固持至該轉移基材及從該轉移基材釋放該等物體。
在另一實施例中，一種方法涉及施加第一輸入至一轉移基材上的複數個轉移元件之一子集。該複數個轉移元件之各者具有一熱元件及經熱耦合至一黏著性元件之該黏著性元件。該等第一輸入使轉移元件之該子集中的各轉移元件達到一第一溫度，使得該子集中之各轉移元件的各黏著性元件達到一第一表面黏著性。不在該子集中的其他轉移元件係在一第二溫度，該第二溫度使該等其他轉移元件之各黏著性元件達到小於該第一表面黏著性之一第二表面黏著性。使至少該等轉移元件之該子集接觸一施體基材(donor substrate)上之複數個物體的物體之各別子集。該轉移基材係移動遠離該施體基材。物體之該子集以該第一表面黏著性黏附至轉移元件之該子集並隨著該轉移基材移動。使該轉移基材上的物體之該子集接觸一目標基材，並將物體之該子集從該轉移基材轉移至該目標基材。
在另一實施例中，一種方法涉及使複數個轉移元件接觸一施體基材上之對應的複數個物體。該等轉移元件之各者包括一黏著性元件，該黏著性元件在一第一溫度具有一第一表面黏著性及在一第二溫度具有一第二表面黏著性。該第二表面黏著性小於該第一表面黏著性。該等轉移元件亦各包括一熱元件，該熱元件可操作以改變該黏著性元件之一溫度。第一輸入係施加至複數個該等轉移元件之一子集的該等熱元件，使轉移元件之該子集中的各轉移元件之該黏著性元件達到該第一表面黏著性。不在該子集中的其他轉移元件之該黏著性元件係該第二表面黏著性。該轉移基材係移動遠離該施體基材，使得物體之一對應的子集黏附至轉移元件之該子集並隨著該轉移基材移動。使該轉移基材上的物體之該子集接觸一目標基材。物體之該子集係從該轉移基材轉移至該目標基材。
可鑑於下列詳細論述及附圖瞭解各種實施例的此等及其他特徵及態樣。
本揭露係關於物體的操縱與組裝，且在一些實施例中係關於經由一轉移基材之微物體的大量組裝。一些電子裝置係藉由將小型物體機械地疊置在彼此頂部上來製造。雖然有時使用晶圓形成技術（諸如層沉積、遮罩、及蝕刻）來製造微電子組件及微光學組件，但是某些類別的材料並不是彼此成長相容的。在此類情況下，該組裝可涉及在一第一基材上形成一類裝置且一第二基材上形成一第二類裝置，並接著（例如）經由覆晶或轉移印刷技術來機械地接合該等裝置。
在本文中所述之態樣係關於一種系統，其能夠將大量微物體（例如，粒子/小晶片(chiplet)/迷你或微發光二極體晶粒）從一施體基材平行轉移至另一基材，同時維持個別微物體之高位置對齊。此系統允許從一轉移基材選擇性地轉移微物體並將該等微物體選擇性地放置至目的地或目標基材。此系統可用於組裝諸如微發光二極體(microLED)顯示器的裝置。
通常，microLED顯示器係以形成個別轉移元件之微觀LED的陣列製成。連同OLED，microLED係主要針對小型、低能量行動裝置。相較於習知LCD系統，OLED與microLED兩者均提供大幅減少的能量需求。不同於OLED，microLED係基於習知的GaN LED技術，其提供比OLED所產生者更高的總亮度，以及提供就每單位電力所發射的光而言更高的效率。其亦不會苦於OLED的較短壽命。
利用microLED的單一4K電視具有約2千5百萬個小型LED子像素，其接著需要組裝。小晶片之大量轉移係可用於microLED製造的一種技術。以高產率將microLED快速地且準確地轉移至一目標底板將是製造商為了使microLED成為一可行的大眾市場產品所需要完善的技術之一。下文所述之技術可用於microLED製造、以及其他組裝程序，其中大量（典型）小型物體需要同時移動，且其中可能需要選擇性地將此類裝置之一子集移動至轉移介質及/或自轉移介質移動。此類微物體可包括但不限於墨水、預沉積金屬膜、矽晶片、積體電路晶片、珠粒、microLED晶粒、微機電系統(micro-electro-mechanical system, MEMS)結構、及任何其他預製造微結構。
能夠依任意型態選擇性地轉移小晶片可用以促進用於microLED顯示器製造之有效轉移程序、像素修復、孔/空位再填充，其將導致高程序產率。已將一彈性體印模(stamp)用以針對此類型的應用決定性地轉移微尺度LED晶片。然而，彈性體印模具有固定型態且無法轉移任意型態的小晶片。不可避免地，小晶片之一些子集將是有瑕疵的，而因此變得難以使用此一印模來置換選定的少數小晶片。
在圖1及圖2中，方塊圖顯示可使用根據一實例實施例之裝置、系統、及方法來實現的一組裝程序之一實例。在圖1中，施體晶圓/基材100係顯示其包括一小晶片陣列101，其可已係成長或放置在基材100上。在陣列101中的陰影小晶片已係識別為有缺陷的，且當將小晶片轉移至目標基材102時，僅轉移小晶片陣列之子集101a，即無陰影的良好小晶片。此可利用如圖2所示之一轉移基材200來實現，一旦經識別，其可從施體基材100選擇性地僅拾取子集101a。如圖2所示，轉移基材202隨後拾取小晶片之第二集合200（例如，從不同的施體基材）。在集合200內之小晶片的位置對應於第一施體基材100上之有缺陷的小晶片之位置。轉移基材202將此集合200移動至目標基材102，導致經定位在目標基材102上的操作性小晶片之一完整集合201。
本揭露係關於（除了其他者以外）一種具有轉移元件（例如，轉移像素）之一集合的一轉移基材，其可選擇性地固持微物體之一子集。因此，即使當所有轉移元件係與大於該子集合的微物體陣列接觸時，僅該子集將被黏附並轉移，且該子集之外的物體將被留下或以其他方式而不受影響。類似地，轉移基材可能夠選擇性地釋放目前係附接至該基材的微物體之一子集，使得僅將該子集轉移至一目標，即使所有轉移元件目前正固持一微物體。此程序係可重複且可逆的，使得不需要永久性接合以影響該等物體的選擇性固持或釋放。
在圖3中，側視圖繪示根據一實例實施例之一設備300的細節。該設備包括一轉移基材302，該轉移基材具有二或更多個轉移元件304。轉移元件304之各者包括一黏著性元件306，該黏著性元件在一第一溫度具有一第一表面黏著性及在一第二溫度具有一第二表面黏著性。該第二表面黏著性小於該第一表面黏著性。轉移元件304之各者亦包括一熱元件308，該熱元件可操作以回應於一輸入（例如，經由輸入310）而改變黏著性元件306之一溫度。一控制器312經耦合以提供輸入310至熱元件308，藉此使轉移元件304之一子集將物體314拾取並固持至轉移基材302及（可選地）從該轉移基材釋放物體314。具體而言，物體314將不會以第二表面黏著性黏貼至轉移元件304，但將以第一表面黏著性黏貼。
設備300可係微轉移系統之部分，該微轉移系統係用以將微物體（例如，1 µm至1 mm）從轉移基材302轉移至目標基材316的一系統。黏著性元件306可由含有丙烯酸硬脂酯(stearyl acrylate, SA)為基的多聚合物所形成。在此一情況下，在第一溫度與第二溫度之間的差異可小於20℃（其中第二溫度小於第一溫度）以調整黏著性元件306的膠黏性，使得表面黏著性有明顯差異。應理解，一些材料可能在相對較高的溫度失去表面黏著性。在此一情況下，在本文中所述之方法及設備可經組態使得該第二溫度大於該第一溫度。
熱元件308可包括一加熱元件及一冷卻元件之一者或兩者。輸入310可包括電信號及/或雷射光。輸入310可經組態（例如，使用矩陣電路）使得存在比轉移元件304之總數量更少的線行進至控制器312。轉移元件304可進一步包括在黏著性元件306與轉移基材302之間的熱絕緣體309。絕緣體309幫助防止熱轉移至基材302，藉此減少影響黏著性元件306處之溫度改變及減少回應時間所需的能量之量。
大致上，轉移元件304形成中間轉移表面，其黏性可係隨溫度而變動地調變（例如，可從剛性變成膠黏）。此一表面可用以依受控且可選擇的方式來拾取及釋放微物體之群組。各轉移元件304可具有從數微米至數百微米之橫向尺寸W。各轉移元件304可具有從小於一微米至數百微米之總厚度T。轉移陣列之節距可從數微米變化至數毫米。在一些實施例中，熱元件308及絕緣層309係彼此非實體隔離的連續層。如此，轉移元件「像素」係其中可個別地定址及控制的加熱/冷卻元件的區域（參見圖6）。基材302材料可包括但不限於玻璃、石英、矽、聚合物、及碳化矽。基材302可具有從數十微米至數毫米之厚度範圍及從數毫米至一公尺之橫向尺寸。
注意到，雖然所繪示的實施例顯示二或更多個轉移元件304，但是在一些情況中可使用單一轉移元件。例如，單一轉移元件304可係放置在機械手臂之端部處的一操縱器之部分。在此一組態中，可使用單一轉移元件304以拾取物體而不需要使用鉗子、真空、磁力等。在其他組態中，一或多個轉移元件可放置在鉗子或其他固持附加物之端部處，以協助握持而不需在所固持的該物體上施加不當的壓力。如同其他實施例，一熱元件可在固持操作期間增加表面黏著性，且在釋放操作期間減少表面黏著性。
已研究出包含丙烯酸硬脂酯(SA)之相變聚合物作為雙穩態電活性聚合物(bistable electroactive polymer, BSEP)，以用於黏著性元件。BSEP聚合物係低於其玻璃轉移溫度(Tg)的剛性聚合物。高於Tg，則其變成展現大的斷裂伸長率及高介電場強度的彈性體。電力制動可在高於Tg以作用為介電質彈性體的似橡膠BSEP實行。當將該聚合物冷卻至低於Tg時，則變形被鎖定。當該聚合物經再加熱至高於Tg時，可逆轉形狀變化。
已經研究丙烯酸硬脂酯（丙烯酸十八酯，SA）為基的聚合物為形狀記憶聚合物，由於其等在硬脂基部分(stearyl moiety)的結晶狀態與熔化狀態之間的急劇相變。硬脂基部分之結晶聚集體的突然且可逆的相變導致在溫度循環期間聚合物的剛性狀態與似橡膠狀態之間的快速移動。SA的轉變一般低於50℃，其具有小於10℃之窄相變化溫度範圍。因此，SA係用於賦予急劇的剛性至似橡膠的轉變之理想組分。亦發現該材料之此急劇的剛性至似橡膠的轉變係對應於急劇的非膠黏至膠黏的表面轉變。已進行一些初步實驗來驗證此特性。
在一實驗中，在室溫將派瑞克斯(Pyrex)燒瓶底部按壓至派瑞克斯盤中的SA聚合物上。在室溫，無法拾取派瑞克斯盤且該聚合物的表面完全不是膠黏的。當該聚合物的溫度升高至約65℃時，該表面顯示出強的膠黏性，此係因為可由燒瓶拾取派瑞克斯盤。該實驗係可重複的，且發現黏著性切換係可逆的。亦在不同溫度下測試膠黏性，並發現針對該溫度的膠黏性轉變係非常急劇的，如在圖10之圖式中所示者。此特性可用於微粒子組裝的拾取放置機中、用於墨水及色調轉移之轉移印刷系統中、或用於微晶片組裝之微組裝器工具中，諸如用於組裝microLED顯示器。在室溫附近之膠黏性的急劇轉變係允許系統將用於加熱/冷卻該等聚合物切換黏著性的能量最小化。
黏著性元件306可由材料製成，該等材料包括但不限於丙烯酸硬脂酯（丙烯酸十八酯，SA）為基的聚合物、丙烯酸硬脂酯與胺甲酸酯二丙烯酸酯共聚物或其他類型的聚合物。黏著性元件306較佳地具有急劇的剛性至似橡膠的轉變，因此該黏著性可輕易地隨溫度改變而調變。熱元件308可係熱電加熱/冷卻元件、電阻加熱器、二極體加熱器、感應式加熱元件、光學加熱元件等。熱元件308可包括薄膜電阻器、二極體結構、及/或高光能吸收效率材料，諸如碳黑、碳奈米管、經工程設計的奈米粒子等。熱絕緣體309可由諸如聚醯亞胺、PDMS、聚對二甲苯、玻璃、氧化矽、Alx Oy 與SixNy、及其組合而製成。
在一實施例中，轉移基材302含有主動電子組件陣列，且熱元件308可在網格中與其等互連。此係示意性顯示於圖4及圖5中。加熱元件（在這些實例中係電阻器）之2D陣列可由二極體（如圖4所示）或電晶體（如圖5所示）控制。在圖4所示之實施例中，藉由二極體D1至D9之矩陣來控制加熱元件R1至R9。此可稱為被動切換矩陣，其減少將加熱元件連接至控制器晶片所需的電線數目。
在此情況中，加熱元件係依逐列(row-by-row)的方式來定址。例如，R1可係偏壓至0V，而R2及R3係偏壓至5V。C1、C2及C3偏壓電壓將判定加熱元件R1、R2或R3係接通（行係偏壓至5V）或斷開（行線係偏壓至0V）。由於二極體阻斷電流流動，故所有其他加熱器均斷開。針對所有剩餘列重複該程序，針對選定列係偏壓至0V且所有其他列均係偏壓至5V。加熱元件的熱時間常數將係設計成比2D加熱器掃描之「框率(frame rate)」更長，以確保維持準恆溫於各可定址轉移。
圖5中之示意圖顯示另一電路，其中加熱器元件係由電晶體而非二極體控制，其可稱為「主動矩陣切換」。使用電晶體的優點在於可達到較大的電壓範圍及較佳的隔離。在此情況中，所有未經選擇的列將係偏壓至例如-5V，以斷開電晶體。當一列經選擇時，列線係偏壓至例如20V，以接通電晶體。將該行線偏壓至特定電壓使該選定列之對應加熱元件能夠加熱至所欲溫度。類似於圖4中之實施例，將重複該程序於剩餘的其他列。
在圖6中，側視圖顯示根據另一實例實施例之一轉移基材602。如同圖3中之實施例，轉移基材602具有二或更多個轉移元件604，該等轉移元件各包括一黏著性元件606，該黏著性元件具有隨溫度而變化的表面黏著性。轉移元件604之各者亦包括一熱元件608，該熱元件可操作以回應於一輸入而改變局部黏著性元件606（例如，接近熱元件608的元件之部分）的溫度。在此實例中，黏著性元件604係覆蓋超過一個轉移元件604（在此情況中，所有繪示的元件604）的連續層之部分。在本文中所描述的任何實施例可使用由單層所形成的黏著性元件，該單層覆蓋類似於圖6中所示者之複數個元件。
亦值得注意的是此實施例顯示在轉移元件604與基材602之間使用絕緣體609，雖然此類絕緣體609可係可選的。此外，如虛線所指示，熱元件608與絕緣體609之一者或兩者可實施為覆蓋多於一轉移元件604之單層。在此一實施例中，個別信號線（例如，圖3中之線310及/或圖7中之波導1112）可係附接至熱元件層608，使得局部溫度改變係在界定個別轉移元件608之大小及位置的區域內引起。
在圖7中，側視圖顯示根據另一實例實施例之一轉移基材1102。如圖3中之實施例，轉移基材1102具有二或更多個轉移元件1104，該等轉移元件各包括一黏著性元件1106，該黏著性元件具有隨溫度而變化的表面黏著性。轉移元件1104之各者亦包括一熱元件1108，該熱元件可操作以回應於一輸入而改變黏著性元件1106之一溫度。在此實例中，熱元件1108係由雷射光1110啟動，該雷射光係經由波導1112而在基材1102中遞送。光係從一或多個雷射1116提供，且可經由光學切換元件1114以選擇性地啟動轉移元件1104，該等光學切換元件將光吸收或重導向遠離不被加熱的轉移元件。注意到可使用多個雷射1116（如每一轉移元件一個雷射般多），該等雷射可整合在基材1102中或安裝於外部。光學開關1114可係電啟動的，且可以類似於圖4及圖5所示之二極體及電晶體的矩陣來配置，以減少至控制器之線數目。
在圖8中，側視圖顯示根據另一實例實施例之一轉移基材1202。如圖3中之實施例，轉移基材1202具有二或更多個轉移元件1204，該等轉移元件各包括一黏著性元件1206，該黏著性元件具有隨溫度而變化的表面黏著性。轉移元件1204之各者亦包括一熱元件1208，該熱元件可操作以回應於一輸入而改變黏著性元件1206之一溫度。轉移元件1204之各者亦包括一絕緣體1209，其使熱元件1208與轉移基材1202熱絕緣。
在此實施例中，轉移基材1202係彎曲的且安裝至滾筒1213，該滾筒相對於目標基材1216旋轉。滾筒1213及目標基材亦相對於彼此而線性移動（在此圖示中係水平地），使得一次僅轉移元件1204之一子集（例如，單一元件1204）接觸轉移基材1216。轉移元件1204之該子集經選擇性地啟動以固持或釋放一物體1214，使得物體1214之一些者係選擇性地轉移至目標基材1216。注意到左邊的陰影物體1214未轉移至目標基材1216。注意到滾筒1213及基材1202之另一部分可與施體基材（未圖示）接觸，使得物體之轉移可係一滾動轉移程序，其中物體1214從施體拾取並轉移至目標1216。滾筒1213及基材1202可在相同時間、或不同時間與施體基材及目標基材接觸。在此一情況中，一第二轉移基材（未圖示）可用以沉積經捨棄物體1214，且此第二轉移基材亦可使用一彎曲基材。在本文中所述之任何其他實施例可使用一彎曲轉移基材及滾動轉移程序，如圖8所示。
在圖9A及圖9B中，一方塊圖顯示根據一實例實施例之一方法。在方塊1300中，顯示一轉移基材1302，其具有轉移元件1304至1307之陣列。轉移基材1302係顯示為定位在一施體基材1308上方，使得轉移元件1304至1307之陣列在各別物體1309至1312上方對準。如陰影所指示，物體1309、1311形成意欲轉移離開施體基材1308的物體1309至1312之一子集。如箭頭所指示，轉移基材1302移動朝向施體基材1308，或反之亦然。
如方塊1316中所見，在轉移元件1304至1307與物體1309至1312的接觸後，輸入係施加至轉移元件1304之子集1304、1306。該等輸入使該子集中的各轉移元件1304、1306達到一第一溫度，使得該子集中之各轉移元件1304、1306的黏著性元件達到一第一表面黏著性。此輸入可在轉移元件1304、1306之子集接觸物體1309之各別子集之前或之後施加。物體1309之子集以第一表面黏著性黏附至轉移元件1304、1306之子集。
注意到不在轉移元件1304、1306之子集中的其他轉移元件1305、1307係處於一第二溫度，該第二溫度導致轉移元件1305、1307具有第二表面黏著性。以此第二表面黏著性，其他轉移元件1305、1307將不黏附至各別物體1310、1312。注意到在方塊1300中所示之先前步驟中，轉移元件1304至1307可處於任何溫度（包括第一溫度及第二溫度）。在一些實施例中，可係所欲的是使所有元件1304至1307處於第二溫度，或者使所有元件1304至1307設定成第一溫度及第二溫度，如在方塊1316中所示。
如在方塊1318中所見，轉移基材1302係移動遠離施體基材（由箭頭指示），使物體1309、1311之子集從施體基材1308分離，而其他物體1310、1312仍留在施體基材上。如在圖9B中之方塊1320中所見，轉移基材1302與目標基材1322對準並朝該目標基材移動。如在方塊1324中所見，轉移基材1302上的物體1309、1311之子集接觸目標基材1322。
可選地，在方塊1324、1326的一者或兩者中，可將第二輸入施加至轉移元件1304、1306之子集，使該子集中之各轉移元件達到一第二溫度，使得該子集中的各轉移元件1304、1306之一黏著性元件達到第二（較低的）表面黏著性。第二表面黏著性允許物體1309、1311之子集易於轉移至目標基材1322。在第二溫度比第一溫度更冷的情況中，轉移基材1302的一些者或全部可係冷卻的環境空氣、一熱電冷卻器、一蒸氣壓縮冷卻器、及一使用氣體/液體為冷卻劑之強制對流冷卻元件。在物體1309、1311之子集與目標基材1322之間亦可能有固有的或主動產生的吸引力，使得物體1309、1311可以第一表面黏著性釋放，藉此排除顯著改變轉移元件1304、1306之溫度的需求（雖然其仍可有益於改變可能的溫度）。例如，可從目標基材1322施加反作用力，該反作用力包括但不限於黏著力、電力、磁力、及一真空產生力。
除非另有指明，否則說明書及申請專利範圍中用以表達特徵之尺寸、數量以及物理特性的所有數字，皆應理解為在所有情況下以「約(about)」一詞修飾之。因此，除非另有相反指示，否則在前述說明書以及隨附申請專利範圍中所提出的數值參數取決於所屬技術領域中具有通常知識者運用本文所揭示之教示所獲得的所欲特性而有所不同。藉由端點使用數值範圍包括在該範圍內的所有數字（例如1至5包括1、1.5、2、2.75、3、3.80、4、及5）以及該範圍內的任何範圍。
上述各種實施例可使用互動以提供具體結果之電路系統、韌體及/或軟體模組來實施。所屬技術領域中具有通常知識者可輕易地使用所屬技術領域中通常已知的知識來實施此類所描述的功能，無論以模組等級或整體。例如，在本文中所繪示之流程圖及控制圖可用以產生用於由一處理器執行的電腦可讀取指令/碼。此類指令可儲存在非暫時性電腦可讀取媒體上，並轉移至處理器以用於執行，如所屬技術領域中已知者。以上所示之結構及程序僅係可用以提供在上文中所描述之功能的實施例之一代表性實例。
為了說明及描述的目的，已經提供了實例實施例的前述說明。其並非旨在窮舉或限制實施例為所揭示的精確形式。鑑於上述教示，許多修改及變型係可行的。所揭示實施例之任何或所有特徵可個別或以任何組合施加，並非意欲係限制性的，而純係例示性的。旨在使本發明之範圍並非以此實施方式限制，而是由隨附申請專利範圍所判定。
100:施體晶圓/基材 101:陣列 101a:子集 102:目標基材 200:轉移基材/集合 201:完整集合 202:轉移基材 300:設備 302:轉移基材/基材 304:轉移元件 306:黏著性元件 308:熱元件 309:熱絕緣體/絕緣體/絕緣層 310:輸入/線 312:控制器 314:物體 316:目標基材 602:轉移基材/基材 604:轉移元件/元件/黏著性元件 606:黏著性元件 608:熱元件/轉移元件/熱元件層 609:絕緣體 1102:轉移基材/基材 1104:轉移元件 1106:黏著性元件 1108:熱元件 1110:雷射光 1112:波導 1114:光學切換元件/光學開關 1116:雷射 1202:轉移基材/基材 1204:轉移元件/元件 1206:黏著性元件 1208:熱元件 1209:絕緣體 1213:滾筒 1214:物體 1216:目標基材/目標/轉移基材 1300:方塊 1302:轉移基材 1304:轉移元件/元件/子集 1305:轉移元件/元件 1306:轉移元件/元件/子集 1307:轉移元件/元件 1308:施體基材 1309,1310,1311,1312:物體 1316:方塊 1318:方塊 1320:方塊 1322:目標基材 1324:方塊 1326:方塊 C1,C2,C3:偏壓電壓 D1,D2,D3,D4,D5,D6,D7,D8,D9:二極體 R1,R2,R3,R4,R5,R6,R7,R8,R9:加熱元件 T:總厚度 W:橫向尺寸
下文參照下列圖式進行論述，其中可使用相同的元件符號以識別多個圖中的相似/相同組件。圖式非必然按比例繪製。 ［圖1］及［圖2］係顯示根據一實例實施例之組裝程序的方塊圖； ［圖3］係根據一實例實施例之一設備的側視圖； ［圖4］及［圖5］係根據實例實施例之用於一轉移基材之切換矩陣的示意圖； ［圖6］係根據一實例實施例之一轉移基材的側視圖； ［圖7］及［圖8］係根據各種實例實施例之轉移基材的側視圖； ［圖9A］及［圖9B］係根據一實例實施例之一方法的圖；及 ［圖10］係顯示根據一實例實施例之用於黏著性元件的一聚合物之黏著性質的圖。
100:施體晶圓/基材
101:陣列
101a:子集
102:目標基材

Claims (21)

  1. 一種轉移設備，其包含：一轉移基材，其包含二或更多個轉移元件，該等轉移元件之各者包含：一黏著性元件，其在一第一溫度具有一第一表面黏著性及在一第二溫度具有一第二表面黏著性，該第二表面黏著性小於該第一表面黏著性；及一熱元件，其可操作以回應於一輸入而改變該黏著性元件之一溫度；及一控制器，其經耦合以提供該等輸入至該二或更多個轉移元件之該等熱元件，以使該等轉移元件之一子集回應於該等轉移元件之該子集的該第一表面黏著性與該第二表面黏著性之間的改變而選擇性地將物體固持至該轉移基材及從該轉移基材釋放該等物體，其中該第一表面黏著性與該第二表面黏著性之間的改變係可重複且可逆的。
  2. 如請求項1之轉移設備，其中該等物體包含次毫米電子裝置。
  3. 如請求項1之轉移設備，其中該二或更多個轉移元件包含以1μm與1mm之間的一節距間隔開的一轉移元件陣列。
  4. 如請求項1之轉移設備，其中該黏著性元件係由含有丙烯酸硬脂酯(SA)聚合物之一多聚合物所形成。
  5. 如請求項1之轉移設備，其中該第一溫度與該第二溫度之間的一差異小於20℃。
  6. 如請求項1之轉移設備，其中該熱元件包含一加熱元件。
  7. 如請求項6之轉移設備，其中該加熱元件包含一電阻加熱元件。
  8. 如請求項1之轉移設備，其中該熱元件包含一冷卻元件。
  9. 如請求項1之轉移設備，其中該等輸入包含電信號。
  10. 如請求項1之轉移設備，其中該等輸入包含雷射光。
  11. 如請求項1之轉移設備，其中該等轉移元件進一步包含一熱絕緣體，該熱絕緣體在該黏著性元件與該轉移基材之間。
  12. 如請求項1之轉移設備，其中該二或更多個轉移元件之該等黏著性元件包含覆蓋所有該二或更多個轉移元件之一連續層。
  13. 如請求項1之轉移設備，其中該黏著性元件在該第一溫度係膠黏的且在該第二溫度係剛性的。
  14. 如請求項1之轉移設備，其中該等轉移元件係在一彎曲基材或一滾筒上實施。
  15. 一種轉移方法，其包含：施加第一輸入至一轉移基材上的複數個轉移元件之一子集，該複數個轉移元件之各者具有一熱元件及經熱耦合至一黏著性元件之該黏著性元件，該等第一輸入使轉移元件之該子集中的各轉移元件達到一第一溫度，使得該子集中之各轉移元件 的各黏著性元件達到一第一表面黏著性，其中不在該子集中的其他轉移元件係在一第二溫度，該第二溫度使該等其他轉移元件之各黏著性元件達到小於該第一表面黏著性之一第二表面黏著性，其中該第一表面黏著性與該第二表面黏著性之間的改變係可重複且可逆的；使至少該等轉移元件之該子集接觸一施體基材上之複數個物體的物體之一各別子集；將該轉移基材移動遠離該施體基材，物體之該子集以該第一表面黏著性黏附至轉移元件之該子集並隨著該轉移基材移動；使該轉移基材上的物體之該子集接觸一目標基材；及將物體之該子集從該轉移基材轉移至該目標基材。
  16. 如請求項15之方法，其中使至少該等轉移元件之該子集接觸物體之該各別子集包含使所有該複數個轉移元件接觸該施體基材上之所有該各別複數個物體，且其中由該等其他轉移元件所接觸的其他物體不會黏附至該轉移基材且不會隨著該轉移基材移動。
  17. 如請求項15之方法，其中將物體之該子集從該轉移基材轉移至該目標基材包含使轉移元件之該子集達到一第二溫度，使得該子集中之各轉移元件的該黏著性元件達到該第二表面黏著性。
  18. 如請求項15之方法，其中該目標基材施加一反作用力，該反作用力促進將物體之該子集從該轉移基材轉移至該目標基材。
  19. 一種轉移方法，其包含：使複數個轉移元件接觸一施體基材上之對應複數個物體，該等轉移元件之各者包含：一黏著性元件，其在一第一溫度具有一第一表面黏著性及在一第二溫度具有一第二表面黏著性，該第二表面黏著性小於該第一表面黏著性；及一熱元件，其可操作以改變該黏著性元件之一溫度，以可重複且可逆地在該第一表面黏著性與該第二表面黏著性之間作改變；施加第一輸入至複數個該等轉移元件之一子集的該等熱元件，使轉移元件之該子集中的各轉移元件之該黏著性元件達到該第一表面黏著性，其中不在該子集中之其他轉移元件的該黏著性元件係該第二表面黏著性；將該轉移基材移動遠離該施體基材，使得物體之一對應的子集黏附至轉移元件之該子集並隨著該轉移基材移動；使該轉移基材上的物體之該子集接觸一目標基材；及將物體之該子集從該轉移基材轉移至該目標基材。
  20. 如請求項19之方法，其中將物體之該子集從該轉移基材轉移至該目標基材包含使轉移元件之該子集達到該第二表面黏著性。
  21. 如請求項19之方法，其中該目標基材施加一反作用力，該反作用力促進將物體之該子集從該轉移基材轉移至該目標基材。
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11302561B2 (en) * 2019-11-12 2022-04-12 Palo Alto Research Center Incorporated Transfer elements that selectably hold and release objects based on changes in stiffness
KR102547027B1 (ko) * 2021-01-13 2023-06-23 (주)에이치아이티에스 다이 본딩 방법
KR102454699B1 (ko) * 2021-02-22 2022-10-17 주식회사 코윈디에스티 형상기억 소재를 이용한 마이크로 led 전사 장치 및 그 전사 방법
KR102575887B1 (ko) * 2021-05-11 2023-09-08 정라파엘 본딩 방법
KR102313696B1 (ko) 2021-05-13 2021-10-15 김순이 통기성이 향상되고 제조가 용이한 쓰레기 봉투
JP2022190832A (ja) * 2021-06-15 2022-12-27 株式会社ジャパンディスプレイ 押圧治具および移載装置
WO2023177347A1 (en) * 2022-03-15 2023-09-21 Capcon Holdings (Beijing) Limited A system and method for placement of at least one conductor pin
KR102517935B1 (ko) * 2022-04-15 2023-04-03 홍성민 투명패널이 광학적으로 수평 정렬을 유지하여 개재된 pcb를 밀착시킴으로써 양면 노광이 가능한 pcb 노광장치
WO2024157426A1 (ja) * 2023-01-26 2024-08-02 信越エンジニアリング株式会社 移送方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9412727B2 (en) * 2011-09-20 2016-08-09 Semprius, Inc. Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion
US9496155B2 (en) * 2010-03-29 2016-11-15 Semprius, Inc. Methods of selectively transferring active components

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5888650A (en) * 1996-06-03 1999-03-30 Minnesota Mining And Manufacturing Company Temperature-responsive adhesive article
KR100853410B1 (ko) 2001-04-11 2008-08-21 소니 가부시키가이샤 소자의 전사방법 및 이를 이용한 소자의 배열방법,화상표시장치의 제조방법
JP2002343944A (ja) * 2001-05-14 2002-11-29 Sony Corp 電子部品の転写方法及び素子の配列方法、画像表示装置の製造方法
US20040235267A1 (en) * 2003-05-23 2004-11-25 James Sheats Lamination and delamination technique for thin film processing
DE102006044718A1 (de) * 2006-09-20 2008-04-03 Tesa Ag Klebemasse
KR100998087B1 (ko) * 2010-04-01 2010-12-03 한국기계연구원 능동 탈부착 척
WO2013012973A2 (en) * 2011-07-19 2013-01-24 3M Innovative Properties Company Debondable adhesive article and methods of making and using the same
US8518204B2 (en) * 2011-11-18 2013-08-27 LuxVue Technology Corporation Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US9773750B2 (en) 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
DE102012112965A1 (de) * 2012-12-21 2014-06-26 Leibniz-Institut Für Neue Materialien Gemeinnützige Gesellschaft Mit Beschränkter Haftung Gegenstand mit schaltbarer Adhäsion
CN105518888B (zh) * 2015-09-09 2018-06-12 歌尔股份有限公司 微发光二极管的修复方法、制造方法、装置及电子设备
US20170215280A1 (en) 2016-01-21 2017-07-27 Vuereal Inc. Selective transfer of micro devices
GB2607246B (en) * 2016-05-11 2023-03-22 Flexenable Ltd Carrier release
TWI723178B (zh) * 2016-06-10 2021-04-01 美商應用材料股份有限公司 微型裝置的無遮罩並行取放轉印
CN109390263A (zh) 2017-08-07 2019-02-26 财团法人工业技术研究院 元件扩距转移方法及实施此转移方法的设备
CN107863316B (zh) * 2017-11-06 2020-07-28 上海天马微电子有限公司 Micro LED转运装置、转运方法及其制作方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496155B2 (en) * 2010-03-29 2016-11-15 Semprius, Inc. Methods of selectively transferring active components
US9412727B2 (en) * 2011-09-20 2016-08-09 Semprius, Inc. Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion

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