TW202118047A - 氧化物半導體膜及半導體裝置 - Google Patents
氧化物半導體膜及半導體裝置 Download PDFInfo
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- TW202118047A TW202118047A TW109122991A TW109122991A TW202118047A TW 202118047 A TW202118047 A TW 202118047A TW 109122991 A TW109122991 A TW 109122991A TW 109122991 A TW109122991 A TW 109122991A TW 202118047 A TW202118047 A TW 202118047A
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Abstract
本發明係藉由下述方法,於前述基體上形成氧化物半導體膜:使至少包含鋁之第1原料溶液霧化而生成第1霧化液滴,再者,使至少包含鎵與摻雜物之第2原料溶液霧化而生成第2霧化液滴,接著,使用第1載氣將第1霧化液滴運送至製膜室內,並使用第2載氣將第2霧化液滴運送至製膜室內後,將第1霧化液滴與第2霧化液滴在製膜室內混合,並使混合之霧化液滴在前述基體表面附近發生熱反應;該氧化物半導體膜係以至少包含鋁及鎵之金屬氧化物為主成分的氧化物半導體膜,其遷移率在5cm2/Vs以上。
Description
本發明係關於一種作為半導體有用的氧化物半導體膜以及使用前述氧化物半導體膜之半導體裝置及系統。
作為可實現高耐壓、低損失及高耐熱的次世代開關元件,使用寬能隙之氧化鎵(Ga2O3)的半導體裝置受到矚目,而期待將其應用於逆變器(inverter)等的電力用半導體裝置。而且因為寬能隙而亦被期待用作LED或感測器等的受發光裝置。根據非專利文獻1,該氧化鎵,藉由分別與銦或鋁、或與其組合進行混晶而能夠控制能隙,作為InAlGaO系半導體,構成極具魅力的材料系統。此處,InAlGaO系半導體係表示InXAlYGaZO3(0X2、0Y2、0Z2、X+Y+Z=1.5~2.5),原則上可將其視為內含氧化鎵的同一材料系統。
接著,近年來,有人研究了一種氧化鎵與氧化鋁的混晶(非專利文獻2、專利文獻1~2)。然而,氧化鋁的絕緣性高,亦難摻雜,遷移率頂多1~2cm2/Vs左右,而難以得到電特性優異的氧化鋁與氧化鎵之混晶。因此,對半導體裝置等有用且電特性優異的氧化鋁與氧化鎵之混晶備受期待。
【現有技術文獻】
【專利文獻】
【專利文獻1】WO2013-035843號公報
【專利文獻2】WO2015-005202號公報
【專利文獻3】日本特開2016-018900號公報
【專利文獻4】WO2018-004008號公報
【非專利文獻】
【非專利文獻1】金子健太郎,「剛玉結構氧化鎵系混晶薄膜的成長和物性」,京都大學博士論文,平成25年3月
【非專利文獻2】Hiroshi Ito, “Growth and Band Gap Control of Corundum-Structured α-(AlGa)2O3 thin films on Sapphire” by Spray-Assisted Mist Chemical Vapor Deposition. The Japan Society of Applied Physics, Japanese Journal of Applied Physics 51(2012) 100207.
本發明之目的在於提供一種具有優異半導體特性的新穎且有用的氧化物半導體膜。
本案發明人為了達成上述目的而進行深入研究的結果,成功創作一種以至少包含鋁及鎵之金屬氧化物為主成分的氧化物半導體膜,其遷移率在
5cm2/Vs以上;發現以此方式所得之氧化物半導體膜,電特性優異,且對半導體裝置有用等,並發現可一舉解決上述以往課題。
又,本案發明人得到上述見解後,進一步重複研究而完成本發明。亦即,本發明係關於以下發明。
[1]一種氧化物半導體膜,其係以至少包含鋁及鎵之金屬氧化物為主成分的氧化物半導體膜,其中,遷移率在5cm2/Vs以上。
[2]如前述[1]之氧化物半導體膜,其進一步包含摻雜物。
[3]如前述[1]或[2]之氧化物半導體膜,其膜厚在500nm以上。
[4]如前述[1]至[3]中任一項之氧化物半導體膜,其中,前述氧化物半導體膜具有剛玉結構。
[5]如前述[1]至[4]中任一項之氧化物半導體膜,其中,相對於前述鎵,前述鋁的含量在1原子%以上。
[6]如前述[1]至[4]中任一項之氧化物半導體膜,其中,相對於前述鎵,前述鋁的含量在5原子%以上。
[7]如前述[2]之氧化物半導體膜,其中,前述摻雜物為n型摻雜物。
[8]如前述[4]之氧化物半導體膜,其中,前述氧化物半導體膜的主面為m面。
[9]如前述[1]至[8]中任一項之氧化物半導體膜,其能隙在5.5eV以上。
[10]一種半導體裝置,其係至少包含半導體層與電極的半導體裝置,其中,前述半導體層係如前述[1]至[9]中任一項之氧化物半導體膜。
[11]一種半導體系統,其係具備半導體裝置,其中,前述半導體裝置係如前述[10]之半導體裝置。
本發明之氧化物半導體膜具有良好的導電性,且半導體特性優異。
1:霧化CVD裝置
2a:第1載氣源
2b:第1載氣(稀釋)源
3a:第1流量調節閥
3b:第1流量調節閥
4:第1霧氣產生源
4a:第1原料溶液
4b:第1霧氣
5:第1容器
5a:水
6:超音波振動子
7:製膜室
8:加熱板
9:供給管
10:基板
12a:第2載氣源
12b:第2載氣(稀釋)源
13a:第2流量調節閥
13b:第2流量調節閥
14:第2霧氣產生源
14a:第2原料溶液
14b:第2霧氣
15:第2容器
15a:水
16:超音波振動子
19:供給管
101a:n-型半導體層
101b:n+型半導體層
102:p型半導體層
103:金屬層
104:絕緣體層
105a:蕭特基電極
105b:歐姆電極
121a:寬能隙之n型半導體層
121b:窄能隙之n型半導體層
121c:n+型半導體層
123:p型半導體層
125a:閘極電極
125b:源極電極
125c:汲極電極
129:基板
131a:n-型半導體層
131b:第一n+型半導體層
131c:第二n+型半導體層
132:p型半導體層
132a:p+型半導體層
134:閘極絕緣膜
135a:閘極電極
135b:源極電極
135c:汲極電極
141a:n-型半導體層
141b:第一n+型半導體層
141c:第二n+型半導體層
142:p型半導體層
145a:閘極電極
145b:源極電極
145c:汲極電極
151:n型半導體層
151a:n-型半導體層
151b:n+型半導體層
152:p型半導體層
154:閘極絕緣膜
155a:閘極電極
155b:發射極
155c:集電極
161:n型半導體層
162:p型半導體層
163:發光層
165a:第1電極
165b:第2電極
167:透光性電極
169:基板
170:電源系統
171:電源裝置
172:電源裝置
173:控制電路
180:系統裝置
181:電子電路
182:電源系統
192:逆變器
193:變壓器
194:整流MOSFET
195:DCL
196:PWM控制電路
197:電壓比較器
201:雙面冷卻型功率卡
202:冷媒管材
203:隔板
208:絕緣板(絕緣隔板)
209:封裝樹脂部
221:分隔壁
222:流路
301a:半導體晶片
302b:金屬傳熱板(突出端子部)
303:散熱器及電極
303b:金屬傳熱板(突出端子部)
304:焊料層
305:控制電極端子
308:接合線
圖1係實施例中使用之製膜裝置的概略構成圖。
圖2係顯示實施例1中的XRD測量結果的圖。
圖3係顯示實施例2中的XRD(X-ray Diffraction)測量結果的圖。
圖4係示意性地顯示蕭特基能障二極體(SBD;schottky barrier diode)的較佳之一例的圖。
圖5係示意性地顯示高電子遷移率電晶體(HEMT;high electron mobility transistor)的較佳之一例的圖。
圖6係示意性地顯示金屬氧化膜半導體場效電晶體(MOSFET;metal-oxide-semiconductor field-effect transistor)的較佳之一例的圖。
圖7係示意性地顯示接面場效電晶體(JFET;junction field-effect transistor)的較佳之一例的圖。
圖8係示意性地顯示絕緣柵雙極電晶體(IGBT;insulated Gate Bipolar Transistor)的較佳之一例的圖。
圖9係示意性地顯示發光元件(LED)的較佳之一例的圖。
圖10係示意性地顯示發光元件(LED)的較佳之一例的圖。
圖11係示意性地顯示電源系統的較佳之一例的圖。
圖12係示意性地顯示系統裝置的較佳之一例的圖。
圖13係示意性地顯示電源裝置之電源電路圖的較佳之一例的圖。
圖14係示意性地顯示功率卡(power card)的較佳之一例的圖。
以下,對本發明之較佳實施形態進行說明。
本發明之氧化物半導體膜,係以至少包含鋁及鎵之金屬氧化物為主成分的氧化物半導體膜,其中,遷移率在5cm2/Vs以上。「氧化物半導體膜」只要為膜狀的氧化物半導體,則未特別限定,可為結晶膜,亦可為非晶膜。結晶膜的情況下,可為單晶膜,亦可為多晶膜。在本發明中,前述氧化物半導體膜較佳為混晶。「金屬氧化物」係指包含金屬元素與氧。「主成分」意為相對於氧化物半導體膜的全成分,以原子比計,包含較佳為50%以上、更佳為70%以上、再佳為90%以上的金屬氧化物,亦可為100%。前述氧化物半導體膜較佳為具有剛玉結構。又,前述遷移率係指以霍爾效應測量所得之遷移率,在本發明之實施態樣中,前述遷移率較佳在5cm2/Vs以上。又,前述氧化物半導體膜的載子密度並未特別限定,在本發明之實施態樣中,較佳為1.0×1016/cm3以上1.0×1020/cm3以下,更佳為1.0×1016/cm3以上5.0×1018/cm3以下。
在本發明之實施態樣中,前述氧化物半導體膜較佳為包含摻雜物。前述摻雜物可為p型摻雜物,亦可為n型摻雜物,但在本發明之實施態樣中,較佳為n型摻雜物。作為n型摻雜物,可列舉例如:錫(Sn)、鍺、矽、鈦、鋯、釩或鈮等及該等的2種以上元素等。作為p型摻雜物,可列舉例如:Mg、H、Li、Na、K、Rb、Cs、Fr、Be、Ca、Sr、Ba、Ra、Mn、Fe、Co、
Ni、Pd、Cu、Ag、Au、Zn、Cd、Hg、Tl、Pb、N、P等及該等的2種以上元素等。在本發明中,前述p型摻雜物較佳為元素週期表的第1族金屬或第2族金屬,更佳為第2族金屬,最佳為鎂(Mg)。
在本發明之實施態樣中,前述氧化物半導體膜的膜厚在500nm以上會發揮更加高耐壓的半導體特性的效果,因而較佳。又,在本發明之實施態樣中,相對於前述鎵,前述鋁的含量較佳在1原子%以上,更佳在5原子%以上,最佳在15原子%以上。藉由使鋁的含量在這樣的較佳範圍內,可得到例如能隙在5.5eV以上的前述氧化物半導體膜。又,再者,藉由將上述較佳的載子密度與鋁含量組合,即使能隙在5.5eV以上,亦可得到電特性更優異的前述氧化物半導體。又,在本發明之實施態樣中,前述氧化物半導體膜的主面為m面會發揮更優異的電特性,因而較佳。該等較佳的前述氧化物半導體膜,可藉由以下說明的較佳製造方法而得。
前述氧化物半導體膜,較佳可藉由下述步驟而得:使至少包含鋁之第1原料溶液霧化而生成第1霧化液滴,再者,使至少包含鎵與摻雜物之第2原料溶液霧化而生成第2霧化液滴(霧化步驟),接著,使用第1載氣將第1霧化液滴運送至製膜室內,並使用第2載氣將第2霧化液滴運送至製膜室內(運送步驟)後,將第1霧化液滴與第2霧化液滴在製膜室內混合,並使混合之霧化液滴(第1霧化液滴與第2霧化液滴的混合物)在前述基體表面附近發生熱反應,藉此於前述基體上形成氧化物半導體膜(製膜步驟)。
(霧化步驟)
霧化步驟係使前述原料溶液霧化而得到霧化液滴。前述霧化液滴亦可
為霧氣。霧化方法只要可使原料溶液霧化,則未特別限定,亦可為習知的方法,但在本發明中,較佳為使用超音波的霧化方法。使用超音波所得之霧化液滴,初速度為零,而漂浮於空中,因而較佳,例如,並非係以噴霧的方式吹附,而是可漂浮於空間中作為氣體運送的霧化液滴,故不會因衝撞能量而損傷,因而非常適宜。霧化液滴的液滴尺寸並未特別限定,亦可為數mm左右,但較佳在50μm以下,更佳為100nm~10μm。
(原料溶液)
在本發明之實施態樣中,前述第1原料溶液只要至少包含鋁,則未特別限定,可包含無機材料,亦可包含有機材料,但在本發明之實施態樣中,適合將使鋁以錯合物或鹽的形態溶解或分散於有機溶劑或水而成者用作第1原料溶液。又,前述第2原料溶液只要至少包含鎵與前述摻雜物,則未特別限定,可包含無機材料,亦可包含有機材料,但在本發明之實施態樣中,適宜地將使前述鎵與前述摻雜物以錯合物或鹽的形態溶解或分散於有機溶劑或水,再將其用作第2原料溶液。作為錯合物的形態,可列舉例如:乙醯丙酮錯合物、羰基錯合物、氨錯合物、氫化物錯合物(hydride complex)等。作為鹽的形態,可列舉例如:有機金屬鹽(例如金屬乙酸鹽、金屬草酸鹽、金屬檸檬酸鹽等)、硫化金屬鹽、硝化金屬鹽、磷酸化金屬鹽、鹵化金屬鹽(例如氯化金屬鹽、溴化金屬鹽、碘化金屬鹽等)等。
前述原料溶液的溶劑並未特別限定,可為水等的無機溶劑,亦可為醇等的有機溶劑,亦可為無機溶劑與有機溶劑的混合溶液。在本發明中,前述溶劑較佳為包含水,水與酸的混合溶劑亦為較佳。作為前述水,更具體而言,可列舉例如:純水、超純水、自來水、井水、礦泉水、礦坑水(mine
water)、溫泉水、泉水、淡水、海水等,但在本發明中,較佳為超純水。又,作為前述酸,更具體而言,可列舉例如:乙酸、丙酸、丁酸等的有機酸;三氟化硼、三氟化硼合乙醚、三氯化硼、三溴化硼、三氟乙酸、三氟甲磺酸、對甲苯磺酸等。
(基體)
基體沒有特別限制,只要其可以支撐半導體膜即可。對於基體的材料沒有特別限制,只要其不妨礙本發明的目的,可以是公知的基體,可以是有機化合物,也可以是無機化合物。基體的形狀可以是任何形狀,並且對任何形狀都有效,舉出例如平板或圓板等的板狀、纖維狀、棒狀、圓柱狀、棱柱狀、筒狀、螺旋狀、球狀、環狀等,但在本發明中,優選為基板。基板的厚度在本發明中沒有特別限制。
前述基板,只要不阻礙本發明之目的,則未特別限定,可為絕緣體基板,亦可為半導體基板,亦可為導電性基板。作為前述基板,可列舉例如:包含具有剛玉結構之基板材料作為主成分的基底基板等。此處,「主成分」意為相對於基板材料的全成分,以原子比計,包含較佳為50%以上、更佳為70%以上、再佳為90%以上的具有前述特定結晶結構之基板材料,亦可為100%。
基板材料,只要不阻礙本發明之目的,則未特別限定,亦可為習知者。作為以具有前述剛玉結構之基板材料為主成分的基底基板,可列舉藍寶石基板(較佳為m面藍寶石基板)或α型氧化鎵基板(較佳為m面的α型氧化鎵基板)等為較佳例。
前述基體為結晶基板,進一步具有0.2°~12.0°的傾斜角(off angle)亦為較佳。在具有剛玉結構的鎵與鋁之金屬氧化物中,以前述較佳範圍的原子比例包含鎵與鋁,又,具有前述較佳範圍的載子密度,藉此可實現遷移率5cm2/Vs以上且能隙在5.5eV以上的前述氧化物半導體膜。
(運送步驟)
運送步驟中,藉由前述載氣(包含第1載氣與第2載氣)將前述霧化液滴(第1霧化液滴與第2霧化液滴)運送至製膜室內。作為載氣的種類,只要不阻礙本發明之目的,則未特別限定,可列舉例如:氧、臭氧、氮或氬等的惰性氣體、或是氫氣或組成氣體等的還原氣體等,但在本發明中,較佳為使用氧作為載氣。又,載氣的種類可為1種,亦可為2種以上,亦可進一步使用變更載氣濃度的稀釋氣體(例如10倍稀釋氣體等)等。又,載氣的供給處亦可不僅為1處而為2處以上。載氣的流量並未特別限定,但較佳為0.01~20L/分鐘,更佳為1~10L/分鐘。稀釋氣體的情況下,稀釋氣體的流量較佳為0.001~2L/分鐘,更佳為0.1~1L/分鐘。
(製膜步驟)
製膜步驟中,使前述霧化液滴(第1霧化液滴與第2霧化液滴的混合物)在前述基體表面附近發生熱反應,以在前述基體的一部分或全部表面上製膜。前述熱反應只要係可從前述霧化液滴形成膜的熱反應,則未特別限定,只要是以熱使前述霧化液滴進行反應即可,反應條件等,只要不阻礙本發明之目的,亦並未特別限定。在本步驟中,通常以溶劑之蒸發溫度以上的溫度進行前述熱反應,但較佳為不過高的溫度以下。在本發明中,
較佳在750℃以下進行前述熱反應,更佳係以400℃~750℃的溫度進行。又,只要不阻礙本發明之目的,熱反應可在真空下、非氧氣環境下、還原氣體環境下及氧氣環境下的任一的環境下進行,又,亦可在大氣壓下、加壓下及減壓下的任一條件下進行,但在本發明中,較佳係在氧氣環境下進行,在大氣壓下進行亦為較佳,更佳係在氧氣環境下且大氣壓下進行。另外,膜厚可藉由調整製膜時間來設定,在本發明中,較佳係使膜厚為500nm以上。
在本發明中,可直接在前述基體上進行製膜,但亦可在前述基體上積層與前述氧化物半導體膜的組成為不同組成的半導體層(例如,n型半導體層、n+型半導體層、n-型半導體層、p型半導體層、p+型半導體層、p-型半導體層等)或絕緣體層(亦包含半絕緣體層)、緩衝層等的其他層後,隔著其他層而在前述基體上進行製膜。作為半導體層或絕緣體層,可列舉例如包含前述第9族金屬及/或第13族金屬的半導體層或絕緣體層等。作為緩衝層,可列舉例如包含剛玉結構之半導體層、絕緣體層或導電體層等作為較佳例。作為包含前述剛玉結構之半導體層,可列舉例如:α-Fe2O3、α-Ga2O3、α-Al2O3、α-Ir2O3、α-In2O3及該等之混晶等。又,包含前述剛玉結構之前述緩衝層的積層方法並未特別限定,亦可與前述積層方法相同。
以上述方式所得之氧化物半導體膜,可作為半導體層而用於半導體裝置。在功率裝置中尤其有用。又,半導體裝置可分類為半導體層的單面側形成有電極的橫型元件(橫型裝置)及在半導體層的表面與背面兩側分別具有電極的縱型元件(縱型裝置),在本發明中,可較佳地用於橫型裝置與縱型裝置,其中,較佳係用於縱型裝置。作為前述半導體裝置,可列舉例
如:蕭特基能障二極體(SBD)、金屬半導體場效電晶體(MESFET)、高電子遷移率電晶體(HEMT)、金屬氧化膜半導體場效電晶體(MOSFET)、靜電感應電晶體(SIT)、接面場效電晶體(JFET)、絕緣柵雙極電晶體(IGBT)或發光二極體等。
將前述氧化物半導體膜用於半導體層之例顯示於圖4~8。
圖4係顯示具備n-型半導體層101a、n+型半導體層101b、p型半導體層102、金屬層103、絕緣體層104、蕭特基(Schottky)電極105a及歐姆電極105b之蕭特基能障二極體(SBD)的較佳之一例。另外,金屬層103係由例如A1等的金屬所構成,其覆蓋蕭特基電極105a。圖5係顯示具備寬能隙之n型半導體層121a、窄能隙之n型半導體層121b、n+型半導體層121c、p型半導體層123、閘極電極125a、源極電極125b、汲極電極125c及基板129之高電子遷移率電晶體(HEMT)的較佳之一例。
圖6係顯示具備n-型半導體層131a、第一n+型半導體層131b、第二n+型半導體層131c、p型半導體層132、p+型半導體層132a、閘極絕緣膜134、閘極電極135a、源極電極135b及汲極電極135c之金屬氧化膜半導體場效電晶體(MOSFET)的較佳之一例。另外,p+型半導體層132a可為p型半導體層,亦可與p型半導體層132相同。圖7係顯示具備n-型半導體層141a、第一n+型半導體層141b、第二n+型半導體層141c、p型半導體層142、閘極電極145a、源極電極145b及汲極電極145c之接面場效電晶體(JFET)的較佳之一例。圖8係顯示具備n型半導體層151、n-型半導體層151a、n+型半導體層151b、p型半導體層152、閘極絕緣膜154、閘極電極
155a、發射極155b及集電極155c之絕緣柵雙極電晶體(IGBT)的較佳之一例。
(LED)
本發明之半導體裝置為發光二極體(LED)時之一例顯示於圖9。圖9的半導體發光元件於第2電極165b上具備n型半導體層161,並在n型半導體層161上積層有發光層163。接著,在發光層163上積層有p型半導體層162。在p型半導體層162上具備透光性電極167,發光層163所產生之光會穿透該透光性電極167;在透光性電極167上積層有第1電極165a。另外,圖9的半導體發光元件,除了電極部分,亦可被保護層所覆蓋。
作為透光性電極的材料,可列舉包含銦(In)或鈦(Ti)之氧化物的導電性材料等。更具體而言,可列舉例如:In2O3、ZnO、SnO2、Ga2O3、TiO2、CeO2或該等2種以上的混晶或摻雜於該等而成者等。藉由以濺射(sputtering)等習知的方法設置該等材料,可形成透光性電極。又,在形成透光性電極後,亦可實施以透光性電極的透明化為目的的熱退火。
根據圖9的半導體發光元件,以第1電極165a為正極,以第2電極165b為負極,透過兩者在p型半導體層162、發光層163及n型半導體層161上流動電流,藉此使發光層163發光。
作為第1電極165a及第2電極165b的材料,可列舉例如:Al、Mo、Co、Zr、Sn、Nb、Fe、Cr、Ta、Ti、Au、Pt、V、Mn、Ni、Cu、Hf、W、Ir、Zn、In、Pd、Nd或Ag等的金屬或該等的合金、氧化錫、氧化鋅、氧化
銦、氧化銦錫(ITO)、氧化鋅銦(IZO)等的金屬氧化物導電膜、聚苯胺、聚噻吩或聚吡咯等的有機導電性化合物、或該等的混合物等。電極的製膜法並未特別限定,可從印刷方式、噴塗法、塗布方式等的濕式方式、真空蒸鍍法、濺射法、離子鍍法等的物理方式、CVD、電漿化學氣相沉積法等的化學方式等之中,依照考量與前述材料的適性而適當選擇之方法,形成於前述基板上。
另外,發光元件之另一態樣顯示於圖10。圖10的發光元件中,在基板169上積層有n型半導體層161,並在藉由將p型半導體層162、發光層163及n型半導體層161的一部分形成切口所露出之n型半導體層161的半導體層露出面上之一部分積層有第2電極165b。
本發明之半導體裝置,除了上述事項之外,亦適合進一步使用習知的方法,而用作功率模組、逆變器(inverter)或轉換器(converter),再者,適合用於例如使用電源裝置的半導體系統等。前述電源裝置可藉由通常法與配線圖案等連接等,藉此由前述半導體裝置製作或製作成前述半導體裝置。圖11係使用多個前述電源裝置171、172與控制電路173來構成電源系統170。如圖12所示,前述電源系統可將電子電路181與電源系統182組合而用於系統裝置180。另外,電源裝置的電源電路圖之一例顯示於圖13。圖13係顯示包含功率電路與控制電路之電源裝置的電源電路,藉由逆變器192(由MOSFETA~D所構成)將DC電壓以高頻進行切換而轉換成AC後,以變壓器193實施絕緣及變壓,並以整流MOSFET194(A~B’)整流後,利用DCL195(平滑用線圈L1、L2)與電容器使其平滑,以輸出直流電壓。此時,以電壓比較器197將輸出電壓與基準電壓進行比較,利用
PWM控制電路196來控制逆變器192及整流MOSFET194,以成為預期的輸出電壓。
在本發明中,前述半導體裝置較佳為功率卡;更佳為包含冷卻器及絕緣構件,且在前述半導體層的兩側分別至少隔著前述絕緣構件設置前述冷卻器;最佳係在前述半導體層的兩側分別設置散熱層,且在散熱層的外側至少隔著前述絕緣構件分別設置前述冷卻器。圖14係顯示本發明之較佳實施態樣之一的功率卡。圖14的功率卡為雙面冷卻型功率卡201,其具備冷媒管材202、隔板203、絕緣板(絕緣隔板)208、封裝樹脂部209、半導體晶片301a、金屬傳熱板(突出端子部)302b、散熱器及電極303、金屬傳熱板(突出端子部)303b、焊料層304、控制電極端子305、接合線308。冷媒管材202的厚度方向剖面具有多數的流路222,該些流路222被互相隔著預定間隔在流路方向上延伸的大量分隔壁221所劃分。根據這種較佳的功率卡,可實現更高的散熱性,並可滿足更高的可靠度。
【實施例】
1.製膜裝置
使用圖1說明本實施例所使用之霧化CVD(Mist Chemical Vapor Deposition)裝置(1)。霧化CVD裝置(1)至少具備:載氣源(2a、12a),供給載氣;流量調節閥(3a、13a),用以調節從載氣源(2a、12a)送出的載氣流量;霧氣產生源(4、14),收納原料溶液(4a、14a);容器(5、15),裝有水(5a、15a);超音波振動子(6、16),安裝於容器(5、15)的底面;製膜室(7);供給管(9、19),從霧氣產生源(4、14)連接至基板(10)附近;及加熱板(8),設置於製膜室(7)內。另外,在加熱
板(8)上設置有基板(10)。又,原料溶液(4a、14a)有兩種,分別裝備有載氣源(2a、12a)、載氣(稀釋)源(2b、12b)、流量調節閥(3a、3b、13a、13b)、霧氣產生源(4、14)、容器(5、15)、超音波振動子(6、16)、供給管(9、19)。原料溶液(4a、14a)為第1原料溶液4a及第2原料溶液14a,第1原料溶液的霧氣與第2原料溶液的霧氣以在製膜室7內混合的方式而構成。
2.原料溶液的製作
於0.15mol/L的乙醯丙酮鋁水溶液中,加入以體積比為2%的鹽酸並混合,將其作為第1原料溶液。又,於0.05mol/L的乙醯丙酮鎵水溶液中,加入2%的鹽酸並混合,再者,相對於鎵以0.1mol%的比例加入溴化錫(SnBr2),將其作為第2原料溶液。
3.製膜準備
將上述2.所得之第1原料溶液4a收納於第1霧氣產生源4內。又,將第2原料溶液14a收納於第2霧氣產生源14內。接著,作為基板10,將m面(具有2°的傾斜角)藍寶石基板設置於加熱板8上,使加熱板8運作,以使基板的溫度升溫至650℃。接著,分別打開第1流量調節閥3a、3b與第2流量調節閥13a、13b,從載氣源的第1載氣源2a、2b與第2載氣源12a、12b分別將載氣供給至製膜室7內,以載氣充分取代製膜室7的環境氣體之後,分別將第1載氣的流量調節為0.7L/分鐘,將第1載氣(稀釋)的流量調節為0.5L/分鐘,又,分別將第2載氣的流量調節為1L/分鐘,將第2載氣(稀釋)的流量調節為0.5L/分鐘。另外,使用氮作為載氣。
4.膜形成
接著,以2.4MHz使超音波振動子6振動,並將該振動通過水5a傳播至原料溶液4a,藉此使第1原料溶液4a霧化而生成第1霧氣4b。又,相同地,以2.4MHz使超音波振動子16振動,並將該振動通過水15a傳播至第2原料溶液14a,藉此使第2原料溶液14a霧化而生成第2霧氣14b。第1霧氣4b藉由載氣通過供給管9內而被導入製膜室7內,又,第2霧氣14b藉由載氣通過供給管19內而被導入製膜室7內,在製膜室7內將第1霧氣4b與第2霧氣14b混合。在大氣壓下,以650℃使在製膜室7內混合之霧氣進行熱反應,而在基板10上形成膜。另外,製膜時間為2小時。所得之膜的膜厚為750nm。
針對上述4.所得之膜,使用X射線繞射裝置進行膜的鑑別,結果所得之膜為具有剛玉結構的(Al0.11Ga0.89)2O3膜。XRD的測量結果顯示於圖2。針對所得之α-(Al0.11Ga0.89)2O3膜進行霍爾效應(Hall effect)測量,結果載子類型為n型,載子密度為1.37×1018(/cm3),遷移率為5.91(cm2/V.s)。又,所得之膜係主面為m面且在a軸方向上具有傾斜角的膜。
(實施例2)
將第1載氣的流量設為0.5L/分鐘,並將製膜時間設為3小時,除此以外,以與實施例1相同的方式製膜。所得之膜的膜厚為1310nm。針對所得之膜,使用X射線繞射裝置進行膜的鑑別,結果所得之膜為具有剛玉結構的(Al0.15Ga0.85)2O3膜。XRD的測量結果顯示於圖3。關於所得之α-(Al0.15Ga0.85)2O3膜的電特性,與實施例1相同,載子類型為n型,載子密度及遷移率與實施例1相同。所得之膜的能隙為5.5eV。另外,前述能隙
係使用反射電子能量損失光譜法(REELS),從彈性散射(能量損失為零)之電子的峰值與非彈性散射(僅帶間激發部分損失能量)之電子的峰值所算出。又,所得之膜係主面為m面且在a軸方向上具有傾斜角的膜。
(試驗例1)
將製膜時間設為1小時,使用在0.05mol/L的乙醯丙酮鎵水溶液中加入2%的鹽酸所混合的溶液作為第2原料溶液,以及將第1載氣的流量設為1.0L/分鐘,除此以外,以與實施例1相同的方式製膜。所得之膜的膜厚為362nm。針對所得之膜,使用X射線繞射裝置進行膜的鑑別,結果所得之膜為具有剛玉結構的(Al0.20Ga0.80)2O3膜。以與實施例2相同的方式所算出的能隙為5.8eV。又,所得之膜係主面為m面且在a軸方向上具有傾斜角的膜。
(試驗例2)
將基板的溫度設為700℃,將製膜時間設為1小時,使用在0.05mol/L的乙醯丙酮鎵水溶液中加入2%的鹽酸所混合的溶液作為第2原料溶液,以及將第2載氣的流量設為0.5L/分鐘,除此以外,以與實施例1相同的方式成膜。針對所得之膜,使用X射線繞射裝置進行膜的鑑別,結果所得之膜具有剛玉結構的(Al0.50Ga0.50)2O3膜。以與實施例2相同的方式所算出的能隙為6.1eV。又,所得之膜係主面為m面且在a軸方向上具有傾斜角的膜。
[產業上的可利用性]
本發明之氧化物半導體膜,作為半導體十分有用,可用於半導體(例如化合物半導體電子裝置等)、電子零件/電性機器零件、光學/電子影像相
關裝置、工業構件等所有領域,由於半導體特性優異,故對於半導體裝置等特別有用。
Claims (11)
- 一種氧化物半導體膜,其以至少包含鋁及鎵之金屬氧化物為主成分,其中,遷移率在5cm2/Vs以上。
- 如請求項1所述之氧化物半導體膜,其進一步包含摻雜物。
- 如請求項1或2所述之氧化物半導體膜,其膜厚在500nm以上。
- 如請求項1至3中任一項所述之氧化物半導體膜,其中,所述氧化物半導體膜具有剛玉結構。
- 如請求項1至4中任一項所述之氧化物半導體膜,其中,相對於所述鎵,所述鋁的含量在1原子%以上。
- 如請求項1至4中任一項所述之氧化物半導體膜,其中,相對於所述鎵,所述鋁的含量在5原子%以上。
- 如請求項2所述之氧化物半導體膜,其中,所述摻雜物為n型摻雜物。
- 如請求項4所述之氧化物半導體膜,其中,所述氧化物半導體膜的主面為m面。
- 如請求項1至8中任一項所述之氧化物半導體膜,其能隙在5.5eV以上。
- 一種半導體裝置,其至少包含半導體層與電極,其中,所述半導體層係如請求項1至9中任一項所述之氧化物半導體膜。
- 一種半導體系統,其係具備半導體裝置,其中,所述半導體裝置係如請求項10所述之半導體裝置。
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