TW202113003A - Dicing tape and dicing die-bonding film - Google Patents

Dicing tape and dicing die-bonding film Download PDF

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TW202113003A
TW202113003A TW109120785A TW109120785A TW202113003A TW 202113003 A TW202113003 A TW 202113003A TW 109120785 A TW109120785 A TW 109120785A TW 109120785 A TW109120785 A TW 109120785A TW 202113003 A TW202113003 A TW 202113003A
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layer
die
dicing tape
adhesive layer
dicing
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木村雄大
毎川英利
武田公平
植野大樹
中浦宏
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日商日東電工股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08Macromolecular additives
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08Homopolymers or copolymers of acrylic acid esters
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29Laminated material
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/03Polymer mixtures characterised by other features containing three or more polymers in a blend
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00Presence of (meth)acrylic polymer
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    • C09J2463/00Presence of epoxy resin
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2471/00Presence of polyether
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

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  • Chemical & Material Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

Provided is a dicing tape and the like including: a base layer; and an adhesive layer overlapping the base layer, in which the dicing tape has a permanent deformation ratio of 35% or more when stretched at 23 ℃ or at -5 ℃.

Description

切晶帶、及切晶黏晶膜Slicing tape, and slicing chip mucous film

本發明係關於一種例如製造半導體積體電路時使用之切晶帶、及具備該切晶帶之切晶黏晶膜。The present invention relates to, for example, a dicing tape used in the manufacture of semiconductor integrated circuits, and a dicing die attach film provided with the dicing tape.

先前,已知半導體積體電路之製造中使用之切晶黏晶膜。此種切晶黏晶膜例如具備切晶帶、及積層於該切晶帶且接著於晶圓之黏晶層。切晶帶具有基材層、及與黏晶層相接之黏著層。此種切晶黏晶膜於半導體積體電路之製造中例如以如下方式使用。Previously, diced die bonding films used in the manufacture of semiconductor integrated circuits have been known. Such a dicing die bonding film includes, for example, a dicing tape and a die bonding layer laminated on the dicing tape and then on the wafer. The dicing tape has a base material layer and an adhesive layer connected with the die-bonding layer. Such a diced die bonding film is used in the manufacture of semiconductor integrated circuits in the following manner, for example.

製造半導體積體電路之方法一般具備:前期步驟,其藉由高積體之電子電路於晶圓之單面側形成電路面;及後續步驟,其自形成有電路面之晶圓切取晶片進行組裝。The method of manufacturing a semiconductor integrated circuit generally includes: a preliminary step, which uses a high-integrated electronic circuit to form a circuit surface on a single side of the wafer; and a subsequent step, which cuts the chip from the wafer with the circuit surface to assemble .

後續步驟例如具有:安裝步驟,其將晶圓之與電路面為相反側之面貼附於黏晶層,將晶圓固定於切晶帶;切晶步驟,其將介隔黏晶層貼附於切晶帶之晶圓切斷成小晶片(晶粒)而小片化;擴張步驟,其擴大小片化之晶片彼此之間隔;拾取步驟,其於黏晶層與黏著劑層之間進行剝離,取出貼附有黏晶層之狀態之晶片(晶粒);及黏晶步驟,其將貼附有黏晶層之狀態之晶片(晶粒)接著於被接著體。半導體積體電路經過該等步驟而製造。The subsequent steps include, for example, the mounting step, which attaches the surface of the wafer on the opposite side of the circuit surface to the die-bonding layer, and fixes the wafer to the dicing tape; the die-cutting step, which attaches the intervening die-bonding layer In the dicing tape, the wafer is cut into small chips (die) to be chipped; the expansion step, which expands the distance between the chipped chips; and the picking step, which peels off between the die bond layer and the adhesive layer, Take out the chip (die) with the die-bonding layer attached; and the die-bonding step, which connects the wafer (die) with the die-bonding layer attached to the bonded body. Semiconductor integrated circuits are manufactured through these steps.

於上述製造方法中,於擴張步驟中,例如,於與切晶帶重疊之黏晶層上配置有晶圓之狀態下,於冰點下等低溫下將切晶帶沿放射方向拉伸,進而於室溫下拉伸,藉此擴大相鄰之晶片(晶粒)彼此之間隔(切口)。其後,為了維持間隔(切口),使因延伸而張力下降之切晶帶之一部分熱縮(熱收縮)。具體而言,使較與切斷之晶片(晶粒)重疊之部分更外側部分之切晶帶熱縮,藉此可保持間隔(切口)。In the above-mentioned manufacturing method, in the expansion step, for example, in the state where the wafer is arranged on the bonding layer overlapping with the dicing tape, the dicing tape is stretched in the radial direction at a low temperature such as the freezing point, and then the dicing tape is stretched in the radial direction. Stretching at room temperature, thereby expanding the gap (notch) between adjacent wafers (die). Thereafter, in order to maintain the gap (notch), a part of the dicing tape whose tension is reduced due to extension is heat-shrinked (heat-shrinked). Specifically, the dicing tape of the outer part than the part overlapping with the cut wafer (die) is heat-shrinked, so that the gap (notch) can be maintained.

然,於擴張步驟中,一旦經拉伸之切晶帶因彈性而收縮,存在隨之無法保持上述間隔(切口)之情形。若無法保持間隔(切口),則產生晶片(晶粒)之隆起,於後續之拾取步驟中產生障礙。為了防止此種問題,對切晶帶要求可於擴張後良好地維持切口之性能。However, in the expansion step, once the stretched dicing tape shrinks due to elasticity, there may be situations where the aforementioned interval (notch) cannot be maintained thereafter. If the gap (notch) cannot be maintained, the uplift of the wafer (die) will occur, which will cause obstacles in the subsequent picking steps. In order to prevent this problem, it is required that the dicing tape can maintain the performance of the notch well after expansion.

對此,作為先前之切晶帶,已知有如下者:例如於寬度為25 mm、標線間距離及夾頭間距離為100 mm、拉伸速度為300 mm/min之試驗條件下,伸長率10%下之拉伸負荷為16~34 N(專利文獻1)。 專利文獻1中記載之切晶帶於擴張步驟中具有抑制晶圓之剝離之黏著力,並且具有可切斷成晶片(晶粒)之性能,且於拾取步驟中可相對較容易地剝離黏晶層。 [先前技術文獻] [專利文獻]In this regard, as the previous crystal cutting tape, the following are known: for example, under the test conditions of a width of 25 mm, a distance between the marking lines and a distance between the chucks of 100 mm, and a tensile speed of 300 mm/min, the elongation The tensile load at a rate of 10% is 16 to 34 N (Patent Document 1). The dicing tape described in Patent Document 1 has an adhesive force that inhibits the peeling of the wafer during the expansion step, and has the performance of being cut into wafers (die), and the bonded die can be peeled off relatively easily in the pick-up step Floor. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2011-155270號公報[Patent Document 1] Japanese Patent Laid-Open No. 2011-155270

[發明所欲解決之問題][The problem to be solved by the invention]

然而,關於可於擴張後良好地維持切口之切晶黏晶膜及切晶帶,可以說尚未進行充分研究。However, it can be said that the dicing mucosa and dicing tape that can maintain the cut well after expansion have not been fully studied.

因此,本發明之課題在於提供一種可於擴張後良好地維持切口之切晶帶、及切晶黏晶膜。 [解決問題之技術手段]Therefore, the subject of the present invention is to provide a dicing tape and a dicing die sticking film that can maintain the notch well after expansion. [Technical means to solve the problem]

為了解決上述問題,本發明之切晶帶之特徵在於:具備基材層、及與該基材層重疊之黏著劑層,且於23℃下經延伸時之永久變形率為35%以上。 藉由上述構成之切晶帶,可於擴張後良好地維持切口。In order to solve the above-mentioned problems, the dicing tape of the present invention is characterized in that it has a substrate layer and an adhesive layer overlapping the substrate layer, and has a permanent deformation rate of 35% or more when stretched at 23°C. With the above-mentioned dicing belt, the incision can be maintained well after expansion.

為了解決上述問題,本發明之切晶帶之特徵在於:具備基材層、及與該基材層重疊之黏著劑層,且於-5℃下經延伸時之永久變形率為35%以上。 藉由上述構成之切晶帶,可於擴張後良好地維持切口。In order to solve the above-mentioned problems, the dicing tape of the present invention is characterized in that it has a substrate layer and an adhesive layer overlapping the substrate layer, and has a permanent deformation rate of 35% or more when stretched at -5°C. With the above-mentioned dicing belt, the incision can be maintained well after expansion.

於本發明之切晶帶中,關於藉由動態黏彈性拉伸試驗測定之彈性模數,較佳為60℃下之彈性模數(B)相對於23℃下之彈性模數(A)之比(B/A)為0.17以上。藉此,於室溫下擴張,進而熱收縮後,可更良好地維持切口。In the dicing tape of the present invention, the elastic modulus measured by a dynamic viscoelastic tensile test is preferably the elastic modulus (B) at 60°C relative to the elastic modulus (A) at 23°C The ratio (B/A) is 0.17 or more. Thereby, it expands at room temperature, and after heat shrinks, the incision can be maintained better.

於本發明之切晶帶中,關於藉由動態黏彈性拉伸試驗測定之彈性模數,較佳為23℃下之彈性模數(A)為40 MPa以上300 MPa以下,60℃下之彈性模數(B)為8 MPa以上100 MPa以下。藉此,於室溫下擴張,進而熱收縮後,可更良好地維持切口。In the diced tape of the present invention, the elastic modulus measured by dynamic viscoelastic tensile test is preferably that the elastic modulus (A) at 23°C is 40 MPa or more and 300 MPa or less, and the elasticity at 60°C The modulus (B) is 8 MPa or more and 100 MPa or less. Thereby, it expands at room temperature, and after heat shrinks, the incision can be maintained better.

於本發明之切晶帶中,關於藉由動態黏彈性拉伸試驗測定之彈性模數,較佳為100℃下之彈性模數(C)為0.5 MPa以上20 MPa以下。藉此,於室溫下擴張,進而熱收縮後,可更良好地維持切口。In the diced tape of the present invention, the elastic modulus measured by a dynamic viscoelastic tensile test is preferably that the elastic modulus (C) at 100° C. is 0.5 MPa or more and 20 MPa or less. Thereby, it expands at room temperature, and after heat shrinks, the incision can be maintained better.

本發明之切晶黏晶膜具備上述切晶帶、及積層於該切晶帶之黏著劑層上之黏晶層。 [發明之效果]The chip adhesive film of the present invention comprises the above-mentioned chipping tape and a chip bonding layer laminated on the adhesive layer of the chipping tape. [Effects of Invention]

本發明之切晶帶及切晶黏晶膜發揮可於擴張後良好地維持切口之效果。The dicing tape and the dicing mucous film of the present invention have the effect of maintaining the incision well after expansion.

以下,參照圖式對本發明之切晶黏晶膜、及切晶帶之一實施方式進行說明。Hereinafter, one embodiment of the dicing die film and the dicing tape of the present invention will be described with reference to the drawings.

本實施方式之切晶黏晶膜1具備:切晶帶20;及黏晶層10,其積層於該切晶帶20之黏著劑層22且接著於半導體晶圓。The dicing die bonding film 1 of this embodiment includes: a die dicing tape 20; and a die bonding layer 10 laminated on the adhesive layer 22 of the die dicing tape 20 and then on the semiconductor wafer.

本實施方式之切晶帶20通常為長條片材,於使用前以捲繞之狀態保管。本實施方式之切晶黏晶膜1於具有較要被切斷處理之矽晶圓大一圈之內徑的圓環狀框架拉伸,進行切割以供使用。The dicing tape 20 of this embodiment is usually a long sheet, and is stored in a wound state before use. The dicing die sticking film 1 of this embodiment is stretched on a circular frame having an inner diameter one circle larger than that of the silicon wafer to be cut, and is cut for use.

本實施方式之切晶帶20具備基材層21、及與該基材層21重疊之黏著劑層22。The dicing tape 20 of this embodiment includes a base layer 21 and an adhesive layer 22 overlapping the base layer 21.

本實施方式之切晶帶20於23℃下經延伸時之永久變形率為35%以上。通常,於23℃下經延伸時之永久變形率為100%以下。 本實施方式之切晶帶20於-5℃下經延伸時之永久變形率為35%以上。通常,於-5℃下經延伸時之永久變形率為100%以下。 本實施方式之切晶帶20具有上述任一構成,因此可於擴張後良好地維持切口。 上述永久變形率係切晶帶20於23℃下延伸100%時之物性、或切晶帶20於-5℃下延伸120%時之物性,按照實施例中記載之方法於各溫度下進行測定。例如「延伸100%」係指延伸至成為延伸前長度之2倍之長度。 切晶帶20延伸之方向可為MD方向及TD方向中之任一者,只要任一方向下之延伸之永久變形率符合上述值即可。採用測定3次所得之測定值之平均值作為上述永久變形率。The dicing tape 20 of the present embodiment has a permanent deformation rate of 35% or more when it is stretched at 23°C. Generally, the permanent deformation rate when stretched at 23°C is below 100%. The dicing tape 20 of the present embodiment has a permanent deformation rate of 35% or more when it is stretched at -5°C. Generally, the permanent deformation rate when stretched at -5°C is below 100%. The dicing tape 20 of the present embodiment has any of the above-mentioned configurations, and therefore can maintain the cut well after expansion. The above-mentioned permanent deformation rate refers to the physical properties of the slicing tape 20 when it is stretched 100% at 23°C, or the physical properties of the slicing tape 20 when it is stretched 120% at -5°C. It is measured at each temperature according to the method described in the examples. . For example, "extension 100%" means extending to a length that is twice the length before extension. The direction in which the dicing tape 20 extends can be any of the MD direction and the TD direction, as long as the permanent deformation rate of the extension in either direction meets the above-mentioned value. The average value of the measured values obtained from the three measurements is used as the above-mentioned permanent deformation rate.

上述永久變形率例如可藉由在基材層21中增加容易塑性變形之樹脂之質量比率而增大。另一方面,上述永久變形率例如可藉由在基材層21中增加彈性體樹脂之質量比率而縮小。 又,於基材層21包含複數個樹脂層之情形時,上述永久變形率可藉由改變至少1層之相對厚度而調整。例如,藉由相對地增大更容易塑性變形之樹脂層之厚度,可增大上述永久變形率。The above-mentioned permanent deformation rate can be increased by, for example, increasing the mass ratio of the resin that is easily plastically deformed in the base layer 21. On the other hand, the above-mentioned permanent deformation rate can be reduced by increasing the mass ratio of the elastomer resin in the base layer 21, for example. Moreover, when the base material layer 21 includes a plurality of resin layers, the above-mentioned permanent deformation rate can be adjusted by changing the relative thickness of at least one layer. For example, by relatively increasing the thickness of the resin layer that is more susceptible to plastic deformation, the above-mentioned permanent deformation rate can be increased.

於切晶帶20中,關於藉由動態黏彈性拉伸試驗測定之彈性模數,較佳為23℃下之彈性模數(A)為40 MPa以上300 MPa以下,60℃下之彈性模數(B)為8 MPa以上100 MPa以下。藉此,於室溫下擴張,進而熱收縮後,可更良好地維持切口。 23℃下之彈性模數(A)更佳為50 MPa以上。又,更佳為250 MPa以下。 60℃下之彈性模數(B)更佳為10 MPa以上。又,更佳為80 MPa以下。Regarding the elastic modulus measured by the dynamic viscoelastic tensile test in the dicing tape 20, the elastic modulus (A) at 23°C is preferably 40 MPa or more and 300 MPa or less, and the elastic modulus at 60°C (B) is 8 MPa or more and 100 MPa or less. Thereby, it expands at room temperature, and after heat shrinks, the incision can be maintained better. The modulus of elasticity (A) at 23°C is more preferably 50 MPa or more. Furthermore, it is more preferably 250 MPa or less. The modulus of elasticity (B) at 60°C is more preferably 10 MPa or more. Furthermore, it is more preferably 80 MPa or less.

於切晶帶20中,關於藉由動態黏彈性拉伸試驗測定之彈性模數,較佳為100℃下之彈性模數(C)為0.5 MPa以上20 MPa以下。藉由使100℃下之彈性模數(C)為0.5 MPa以上,可更充分地抑制切晶帶20因熱收縮而熔融破損或變形。因此,可實現更均勻之切口。又,藉由使100℃下之彈性模數(C)為20 MPa以下,切晶帶20可因熱收縮而更充分地熱縮。根據此種理由,藉由使100℃下之彈性模數(C)為上述值,於室溫下擴張,進而熱收縮後,可更良好地維持切口。 100℃下之彈性模數(C)更佳為1 MPa以上。又,更佳為10 MPa以下。Regarding the elastic modulus measured by the dynamic viscoelastic tensile test in the dicing tape 20, it is preferable that the elastic modulus (C) at 100° C. is 0.5 MPa or more and 20 MPa or less. By setting the modulus of elasticity (C) at 100° C. to 0.5 MPa or more, it is possible to more sufficiently suppress the melting damage or deformation of the dicing tape 20 due to thermal shrinkage. Therefore, a more uniform cut can be achieved. In addition, by setting the elastic modulus (C) at 100° C. to 20 MPa or less, the dicing tape 20 can be more fully heat-shrinked due to heat shrinkage. For this reason, by setting the modulus of elasticity (C) at 100°C to the above-mentioned value, it expands at room temperature, and after thermal shrinkage, the incision can be maintained better. The modulus of elasticity (C) at 100°C is more preferably 1 MPa or more. Moreover, it is more preferably 10 MPa or less.

切晶帶20之彈性模數係按照實施例中記載之方法於各溫度下進行測定。上述彈性模數係藉由動態黏彈性測定所測定之拉伸儲存彈性模數之值。The elastic modulus of the dicing tape 20 is measured at each temperature according to the method described in the examples. The above-mentioned elastic modulus is the value of the tensile storage elastic modulus measured by dynamic viscoelasticity measurement.

上述彈性模數(A、B、C)例如可藉由在基材層21中增加彈性模數更高之樹脂之質量比率而提高。另一方面,上述彈性模數例如可藉由減少彈性模數更高之樹脂之質量比率而降低。 又,於基材層21包含複數個樹脂層之情形時,上述彈性模數可藉由改變至少1層之相對厚度而調整。例如,藉由相對地增大彈性模數更高之樹脂層之厚度,可增大上述彈性模數。The above-mentioned elastic modulus (A, B, C) can be increased, for example, by increasing the mass ratio of a resin with a higher elastic modulus in the base layer 21. On the other hand, the above-mentioned elastic modulus can be reduced, for example, by reducing the mass ratio of a higher elastic modulus resin. In addition, when the base layer 21 includes a plurality of resin layers, the above-mentioned elastic modulus can be adjusted by changing the relative thickness of at least one layer. For example, by relatively increasing the thickness of a resin layer with a higher elastic modulus, the above-mentioned elastic modulus can be increased.

於切晶帶中,60℃下之上述彈性模數(B)相對於23℃下之上述彈性模數(A)之比(B/A)較佳為0.17以上。藉此,於室溫下擴張,進而熱收縮後,可更良好地維持切口。 上述比(B/A)更佳為0.18以上,進而較佳為0.20以上。 再者,上述比(B/A)可為0.5以下,亦可為0.3以下。In the dicing tape, the ratio (B/A) of the above-mentioned elastic modulus (B) at 60°C to the above-mentioned elastic modulus (A) at 23°C (B/A) is preferably 0.17 or more. Thereby, it expands at room temperature, and after heat shrinks, the incision can be maintained better. The above-mentioned ratio (B/A) is more preferably 0.18 or more, and still more preferably 0.20 or more. In addition, the above-mentioned ratio (B/A) may be 0.5 or less, or 0.3 or less.

基材層21可為單層構造,亦可具有積層構造。就可藉由改變各層中包含之樹脂之種類、或改變層之厚度比率而相對較容易地調整基材層21之彈性模數及永久變形率之方面而言,基材層21較佳為具有積層構造。The base material layer 21 may have a single-layer structure or a multilayer structure. In terms of relatively easy adjustment of the elastic modulus and permanent deformation rate of the base layer 21 by changing the type of resin contained in each layer or changing the thickness ratio of the layers, the base layer 21 preferably has Layered structure.

基材層21之各層例如為金屬箔、紙或布等纖維片材、橡膠片材、樹脂膜等。 作為構成基材層21之纖維片材,可例舉紙、梭織布、不織布等。 作為樹脂膜之材質,例如可例舉:聚乙烯(PE)、聚丙烯(PP)、乙烯-丙烯共聚物等聚烯烴;乙烯-乙酸乙烯酯共聚物(EVA)、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物等乙烯之共聚物;聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸丁二酯(PBT)等聚酯;聚丙烯酸酯;聚氯乙烯(PVC);聚胺基甲酸酯;聚碳酸酯;聚苯硫醚(PPS);脂肪族聚醯胺、全芳香族聚醯胺(芳香族聚醯胺)等聚醯胺;聚醚醚酮(PEEK);聚醯亞胺;聚醚醯亞胺;聚偏二氯乙烯;ABS(丙烯腈-丁二烯-苯乙烯共聚物);纖維素或纖維素衍生物;含聚矽氧高分子;含氟高分子等。該等可單獨使用1種或組合使用2種以上。Each layer of the base material layer 21 is, for example, a metal foil, a fiber sheet such as paper or cloth, a rubber sheet, a resin film, and the like. The fiber sheet constituting the base layer 21 may, for example, be paper, woven fabric, non-woven fabric, or the like. As the material of the resin film, for example, polyolefin such as polyethylene (PE), polypropylene (PP), ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (Meth) acrylic copolymers, ethylene-(meth)acrylate (random, alternating) copolymers and other ethylene copolymers; polyethylene terephthalate (PET), polyethylene naphthalate ( PEN), polybutylene terephthalate (PBT) and other polyesters; polyacrylate; polyvinyl chloride (PVC); polyurethane; polycarbonate; polyphenylene sulfide (PPS); aliphatic Polyamides, fully aromatic polyamides (aromatic polyamides) and other polyamides; polyether ether ketone (PEEK); polyimine; polyether imine; polyvinylidene chloride; ABS (propylene Nitrile-butadiene-styrene copolymer); cellulose or cellulose derivatives; polysiloxane-containing polymers; fluorine-containing polymers, etc. These can be used individually by 1 type or in combination of 2 or more types.

於基材層21具有樹脂膜之情形時,亦可對樹脂膜實施延伸處理等,控制伸長率等變形性。 為了提高與黏著劑層22之密接性,亦可對基材層21之表面實施表面處理。作為表面處理,例如可採用鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等化學方法或物理方法之氧化處理等。又,亦可實施利用錨塗劑、底塗劑、接著劑等塗佈劑之塗佈處理。When the base material layer 21 has a resin film, the resin film may be subjected to a stretching treatment or the like to control deformability such as elongation. In order to improve the adhesiveness with the adhesive layer 22, the surface of the base layer 21 may be subjected to surface treatment. As the surface treatment, for example, chemical or physical oxidation treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, ionized radiation treatment, etc. can be used. In addition, coating treatment using coating agents such as anchor coating agents, primers, and adhesives may also be performed.

基材層21較佳為包含複數層,更佳為包含至少3層,進而較佳為包含3層。 藉由使基材層21具有複數層之積層構造(例如3層構造),存在如下優點:可改變各層之層厚度之比來相對較簡便地調整彈性模數及永久變形率。The base material layer 21 preferably includes a plurality of layers, more preferably includes at least three layers, and even more preferably includes three layers. By making the base material layer 21 have a multilayer structure of multiple layers (for example, a three-layer structure), there is an advantage that the ratio of the layer thickness of each layer can be changed to relatively easily adjust the elastic modulus and permanent deformation rate.

3層構造之基材層21較佳為具有由非彈性體形成之2個非彈性體層(X、X)、及配置於2個非彈性體層之間且由彈性體形成之彈性體層(Y)(X層/Y層/X層)。 彈性體層通常由在室溫(23℃)下顯示橡膠彈性之高分子材料形成。彈性體層係於在23℃下進行與上述永久變形率之測定相同之測定時,永久變形率未達35%之層。另一方面,非彈性體層係除彈性體以外之層。 具有此種3層積層構造之彈性體之各層通常由樹脂形成。具有3層積層構造之彈性體例如藉由共擠壓成形而製作,使3層一體化。The base material layer 21 of the three-layer structure preferably has two non-elastomeric layers (X, X) formed of a non-elastomeric body, and an elastomer layer (Y) formed of an elastomer disposed between the two non-elastomeric layers (Layer X/Layer Y/Layer X). The elastomer layer is usually formed of a polymer material that exhibits rubber elasticity at room temperature (23°C). The elastomer layer is a layer whose permanent deformation rate is less than 35% when the same measurement as the above-mentioned permanent deformation rate measurement is performed at 23°C. On the other hand, the non-elastomeric layer is a layer other than the elastomer. Each layer of the elastomer having such a three-layer laminated structure is usually formed of resin. The elastomer having a three-layer laminated structure is produced by, for example, co-extrusion molding to integrate the three layers.

配置於外側之非彈性體層例如具有100℃以上130℃以下之熔點。又,非彈性體層較佳為於對構成之樹脂進行GPC(gel permeation chromatograph,凝膠滲透層析儀)測定時具有3以下之分子量分佈分散度(質量平均分子量/數量平均分子量)。The non-elastomeric layer arranged on the outside has, for example, a melting point of 100°C or more and 130°C or less. In addition, the non-elastomeric layer preferably has a molecular weight distribution dispersion (mass average molecular weight/number average molecular weight) of 3 or less when the constituent resin is measured by GPC (gel permeation chromatograph).

非彈性體層(X)亦可包含低密度聚乙烯(LDPE)、高密度聚乙烯(HDPE)、聚丙烯等。作為聚丙烯,可例舉均聚物(均聚丙烯)、或無規聚丙烯及嵌段聚丙烯等共聚物等。聚丙烯亦可為藉由茂金屬觸媒而合成之茂金屬聚丙烯。非彈性體層(X)較佳為包含茂金屬聚丙烯。The non-elastomeric layer (X) may also include low-density polyethylene (LDPE), high-density polyethylene (HDPE), polypropylene, and the like. The polypropylene may, for example, be a homopolymer (homopolypropylene) or a copolymer such as random polypropylene and block polypropylene. The polypropylene may also be a metallocene polypropylene synthesized by a metallocene catalyst. The non-elastomeric layer (X) preferably contains metallocene polypropylene.

另一方面,彈性體層(Y)較佳為包含乙烯-乙酸乙烯酯共聚物(EVA)、或α-烯烴系熱塑性彈性體。作為α-烯烴系熱塑性彈性體,可例舉α-烯烴之均聚物、2種以上α-烯烴之共聚物等。On the other hand, the elastomer layer (Y) preferably contains an ethylene-vinyl acetate copolymer (EVA) or an α-olefin-based thermoplastic elastomer. The α-olefin-based thermoplastic elastomer may, for example, be a homopolymer of α-olefin, a copolymer of two or more kinds of α-olefin, and the like.

基材層21之厚度亦可為60 μm以上160 μm以下。基材層21之厚度較佳為60 μm以上120 μm以下,更佳為80 μm以上100 μm以下。該厚度係藉由度盤規測定隨機選擇之5處之厚度之測定值之平均值。The thickness of the base layer 21 may also be 60 μm or more and 160 μm or less. The thickness of the base layer 21 is preferably 60 μm or more and 120 μm or less, more preferably 80 μm or more and 100 μm or less. The thickness is the average value of the thickness measured at 5 randomly selected locations measured by a dial gauge.

非彈性體層之1層(X層)之厚度相對於彈性體層(Y層)之厚度之比(X層/Y層)較佳為0.05以上0.25以下之範圍。The ratio (X layer/Y layer) of the thickness of one layer (X layer) of the non-elastomeric layer to the thickness of the elastomer layer (Y layer) is preferably in the range of 0.05 to 0.25.

為了對基材層21之背面側(未與黏著劑層22重疊之側)賦予剝離性,例如亦可藉由聚矽氧系樹脂或氟系樹脂等脫模劑(剝離劑)等實施脫模處理。 就可將紫外線等活性能量線自背面側施加至黏著劑層22之方面而言,基材層21較佳為透光性(紫外線透過性)樹脂膜等。In order to impart releasability to the back side of the base material layer 21 (the side that does not overlap the adhesive layer 22), for example, release agents (release agents) such as silicone resins or fluorine resins may be used to perform release. deal with. In terms of being able to apply active energy rays such as ultraviolet rays to the adhesive layer 22 from the back side, the base layer 21 is preferably a light-transmitting (ultraviolet-transmitting) resin film or the like.

本實施方式之切晶帶20亦可具備於使用前之狀態下覆蓋黏著劑層22之一面(黏著劑層22之未與基材層21重疊之面)之剝離片材。於面積小於黏著劑層22之黏晶層10以落入黏著劑層22之方式配置之情形時,剝離片材以覆蓋黏著劑層22及黏晶層10兩者之方式配置。剝離片材係用於保護黏著劑層22,於將黏晶層10貼附於黏著劑層22之前剝離。The dicing tape 20 of the present embodiment may be provided with a release sheet covering one surface of the adhesive layer 22 (the surface of the adhesive layer 22 that does not overlap the base layer 21) in the state before use. In the case where the die bonding layer 10 having an area smaller than the adhesive layer 22 is arranged in a manner to fall into the adhesive layer 22, the peeling sheet is configured to cover both the adhesive layer 22 and the die bonding layer 10. The peeling sheet is used to protect the adhesive layer 22 and is peeled off before attaching the die-bonding layer 10 to the adhesive layer 22.

作為剝離片材,例如可使用藉由聚矽氧系、長鏈烷基系、氟系、硫化鉬等剝離劑進行了表面處理之塑膠膜或紙等。 又,作為剝離片材,例如可使用聚四氟乙烯、聚氯三氟乙烯、聚氟乙烯、聚偏二氟乙烯、四氟乙烯-六氟丙烯共聚物、氯氟乙烯-偏二氟乙烯共聚物等氟系聚合物製膜;聚乙烯、聚丙烯等聚烯烴製膜;聚對苯二甲酸乙二酯(PET)等聚酯製膜等。 又,作為剝離片材,例如可使用藉由氟系剝離劑或丙烯酸長鏈烷基酯系剝離劑等剝離劑進行了表面塗佈之塑膠膜或紙類等。 再者,剝離片材可用作用以支持黏著劑層22之支持材。尤其,剝離片材於將黏著劑層22重疊於基材層21上時適宜地使用。詳細而言,於剝離片材與黏著劑層22積層之狀態下將黏著劑層22重疊於基材層21,重疊後將剝離片材剝離(轉印),藉此,可於基材層21上重疊黏著劑層22。As the release sheet, for example, a plastic film or paper that has been surface-treated with a release agent such as a silicone-based, long-chain alkyl-based, fluorine-based, or molybdenum sulfide, can be used. In addition, as the release sheet, for example, polytetrafluoroethylene, polychlorotrifluoroethylene, polyvinyl fluoride, polyvinylidene fluoride, tetrafluoroethylene-hexafluoropropylene copolymer, chlorofluoroethylene-vinylidene fluoride copolymer can be used. Fluorine-based polymer films such as materials; polyethylene, polypropylene, and other polyolefin films; polyethylene terephthalate (PET) and other polyester films, etc. In addition, as the release sheet, for example, a plastic film or paper coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent can be used. Furthermore, the release sheet can be used as a support material to support the adhesive layer 22. In particular, the release sheet is suitably used when stacking the adhesive layer 22 on the base layer 21. In detail, the adhesive layer 22 is superimposed on the base layer 21 in the state where the release sheet and the adhesive layer 22 are laminated, and the release sheet is peeled off (transferred) after the superposition, so that the adhesive layer 22 can be placed on the base layer 21. Overlap the adhesive layer 22.

於本實施方式中,黏著劑層22例如包含丙烯酸系聚合物、異氰酸酯化合物、及聚合起始劑。 黏著劑層22較佳為具有3 μm以上200 μm以下之厚度。黏著劑層22之形狀及尺寸通常與基材層21之形狀及尺寸相同。 於本實施方式之切晶帶20中,黏著劑層22之厚度相對於切晶帶20之總厚度所占之比率亦可為1%以上15%以下。In this embodiment, the adhesive layer 22 contains, for example, an acrylic polymer, an isocyanate compound, and a polymerization initiator. The adhesive layer 22 preferably has a thickness of 3 μm or more and 200 μm or less. The shape and size of the adhesive layer 22 are generally the same as the shape and size of the base layer 21. In the dicing tape 20 of the present embodiment, the ratio of the thickness of the adhesive layer 22 to the total thickness of the dicing tape 20 may also be 1% or more and 15% or less.

上述丙烯酸系聚合物於分子中至少具有(甲基)丙烯酸烷基酯之結構單元、含有羥基之(甲基)丙烯酸酯之結構單元、及含有聚合性基之(甲基)丙烯酸酯之結構單元。結構單元係構成丙烯酸系聚合物之主鏈之單元。上述丙烯酸系聚合物中之各側鏈包含於構成主鏈之各結構單元。 再者,本說明書中,「(甲基)丙烯酸酯」之記法係表示甲基丙烯酸酯(Methacrylic acid ester)及丙烯酸酯(Acrylic acid ester)中之至少一者。同樣地,「(甲基)丙烯酸」之記法係表示甲基丙烯酸及丙烯酸中之至少一者。The acrylic polymer has at least a structural unit of alkyl (meth)acrylate, a structural unit of (meth)acrylate containing a hydroxyl group, and a structural unit of (meth)acrylate containing a polymerizable group in the molecule . The structural unit is the unit constituting the main chain of the acrylic polymer. Each side chain in the above-mentioned acrylic polymer is contained in each structural unit constituting the main chain. Furthermore, in this specification, the notation of "(meth)acrylate" means at least one of methacrylate (Methacrylic acid ester) and Acrylic acid ester (Acrylic acid ester). Similarly, the notation of "(meth)acrylic acid" means at least one of methacrylic acid and acrylic acid.

於黏著劑層22中包含之丙烯酸系聚合物中,上述結構單元可藉由1 H-NMR、13 C-NMR等NMR(nuclear magnetic resonance,核磁共振)分析、熱分解GC/MS(Gas chromatography/mass spectrometry,氣相層析/質譜)分析、及紅外光譜法等而確認。再者,丙烯酸系聚合物中之上述結構單元之莫耳比率通常根據使丙烯酸系聚合物聚合時之調配量(添加量)算出。In the acrylic polymer contained in the adhesive layer 22, the above-mentioned structural units can be analyzed by 1 H-NMR, 13 C-NMR and other NMR (nuclear magnetic resonance, nuclear magnetic resonance) analysis, thermal decomposition GC/MS (Gas chromatography/ mass spectrometry, gas chromatography/mass spectrometry) analysis, and infrared spectroscopy. In addition, the molar ratio of the above-mentioned structural unit in the acrylic polymer is usually calculated based on the compounding amount (addition amount) when the acrylic polymer is polymerized.

上述(甲基)丙烯酸烷基酯之結構單元來自(甲基)丙烯酸烷基酯單體。換言之,(甲基)丙烯酸烷基酯單體聚合反應後之分子結構為(甲基)丙烯酸烷基酯之結構單元。「烷基」之記法係表示對(甲基)丙烯酸進行酯鍵結之烴部分。 (甲基)丙烯酸烷基酯之結構單元中之烷基部分之烴可為飽和烴,亦可為不飽和烴。 再者,烷基部分較佳為不包含含有氧(O)或氮(N)等之極性基。藉此,可抑制烷基聚合物之極性極端地提高。因此,抑制黏著劑層22對黏晶層10具有過度之親和性。因此,可更良好地自黏晶層10剝離切晶帶20。烷基部分之碳數亦可為6以上10以下。The structural unit of the above-mentioned alkyl (meth)acrylate is derived from an alkyl (meth)acrylate monomer. In other words, the molecular structure of the alkyl (meth)acrylate monomer after polymerization is the structural unit of the alkyl (meth)acrylate. The notation system of "alkyl" refers to the hydrocarbon moiety ester-bonded to (meth)acrylic acid. The hydrocarbon of the alkyl part in the structural unit of the alkyl (meth)acrylate may be a saturated hydrocarbon or an unsaturated hydrocarbon. Furthermore, the alkyl moiety preferably does not contain a polar group containing oxygen (O), nitrogen (N), or the like. Thereby, it is possible to suppress the extreme increase in the polarity of the alkyl polymer. Therefore, it is suppressed that the adhesive layer 22 has an excessive affinity for the die bonding layer 10. Therefore, the dicing tape 20 can be peeled off from the crystal bonding layer 10 more favorably. The carbon number of the alkyl moiety may be 6 or more and 10 or less.

作為(甲基)丙烯酸烷基酯之結構單元,例如可例舉:(甲基)丙烯酸己酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸癸酯等各結構單元。Examples of the structural unit of the alkyl (meth)acrylate include structural units such as hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and decyl (meth)acrylate.

丙烯酸系聚合物具有含有羥基之(甲基)丙烯酸酯之結構單元,該結構單元之羥基容易與異氰酸基反應。 藉由使具有含有羥基之(甲基)丙烯酸酯之結構單元之丙烯酸系聚合物與異氰酸酯化合物共存於黏著劑層22,可使黏著劑層22適度硬化。因此,丙烯酸系聚合物可充分地凝膠化。因此,黏著劑層22可維持形狀並發揮黏著性能。The acrylic polymer has a structural unit of (meth)acrylate containing a hydroxyl group, and the hydroxyl group of the structural unit easily reacts with an isocyanate group. By coexisting an acrylic polymer having a structural unit of (meth)acrylate containing a hydroxyl group and an isocyanate compound in the adhesive layer 22, the adhesive layer 22 can be properly hardened. Therefore, the acrylic polymer can be sufficiently gelled. Therefore, the adhesive layer 22 can maintain its shape and exhibit adhesive performance.

含有羥基之(甲基)丙烯酸酯之結構單元較佳為含有羥基之(甲基)丙烯酸C2~C4烷基酯之結構單元。「C2~C4烷基」之記法係表示對(甲基)丙烯酸進行酯鍵結之烴部分之碳數。換言之,含有羥基之(甲基)丙烯酸C2~C4烷基酯單體表示(甲基)丙烯酸與碳數2~4之醇(通常為二元醇)進行酯鍵結之單體。 C2~C4烷基之烴部分通常為飽和烴。例如,C2~C4烷基之烴部分為直鏈狀飽和烴、或支鏈狀飽和烴。C2~C4烷基之烴部分較佳為不包含含有氧(O)或氮(N)等之極性基。The structural unit of the (meth)acrylate containing a hydroxyl group is preferably a structural unit of a C2-C4 alkyl (meth)acrylate containing a hydroxyl group. The notation system of "C2-C4 alkyl" represents the carbon number of the hydrocarbon moiety ester-bonded to (meth)acrylic acid. In other words, the C2-C4 (meth)acrylic acid C2-C4 alkyl ester monomer containing a hydroxyl group means a monomer in which (meth)acrylic acid is ester-bonded with an alcohol (usually a diol) with 2 to 4 carbon atoms. The hydrocarbon portion of the C2-C4 alkyl group is usually a saturated hydrocarbon. For example, the hydrocarbon portion of the C2-C4 alkyl group is a linear saturated hydrocarbon or a branched saturated hydrocarbon. The hydrocarbon portion of the C2-C4 alkyl group preferably does not contain a polar group containing oxygen (O) or nitrogen (N).

作為含有羥基之(甲基)丙烯酸C2~C4烷基酯之結構單元,例如可例舉(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丙酯、(甲基)丙烯酸羥基正丁酯、或(甲基)丙烯酸羥基異丁酯等(甲基)丙烯酸羥基丁酯之各結構單元。再者,於(甲基)丙烯酸羥基丁酯之結構單元中,羥基(-OH基)可與烴部分之末端之碳(C)鍵結,亦可與除烴部分之末端以外之碳(C)鍵結。As the structural unit of the C2-C4 alkyl (meth)acrylate containing a hydroxyl group, for example, hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, and hydroxyn-butyl (meth)acrylate can be mentioned. , Or (meth) hydroxyisobutyl acrylate and other structural units of (meth) hydroxybutyl acrylate. Furthermore, in the structural unit of hydroxybutyl (meth)acrylate, the hydroxyl group (-OH group) can be bonded to the carbon (C) at the end of the hydrocarbon moiety, or can be bonded to the carbon (C) other than the end of the hydrocarbon moiety. ) Bonding.

上述丙烯酸系聚合物包含側鏈具有聚合性不飽和雙鍵之含有聚合性基之(甲基)丙烯酸酯之結構單元。 藉由使上述丙烯酸系聚合物包含含有聚合性基之(甲基)丙烯酸酯之結構單元,可於拾取步驟前藉由照射活性能量線(紫外線等)而使黏著劑層22硬化。詳細而言,藉由照射紫外線等活性能量線,可自光聚合起始劑產生自由基,並藉由該自由基之作用使丙烯酸系聚合物彼此進行交聯反應。藉此,可藉由照射而使照射前之黏著劑層22之黏著力降低。於是,可良好地自黏著劑層22剝離黏晶層10。 再者,作為活性能量線,採用紫外線、放射線、電子束。The said acrylic polymer contains the structural unit of the (meth)acrylate containing a polymerizable group which has a polymerizable unsaturated double bond in a side chain. By making the acrylic polymer contain a polymerizable group-containing (meth)acrylate structural unit, the adhesive layer 22 can be cured by irradiating active energy rays (ultraviolet rays, etc.) before the pickup step. Specifically, by irradiating active energy rays such as ultraviolet rays, free radicals can be generated from the photopolymerization initiator, and the acrylic polymers can undergo a crosslinking reaction by the action of the free radicals. Thereby, the adhesive force of the adhesive layer 22 before irradiation can be reduced by irradiation. Therefore, the adhesive layer 10 can be peeled off from the adhesive layer 22 well. Furthermore, as the active energy rays, ultraviolet rays, radiation rays, and electron beams are used.

具體而言,含有聚合性基之(甲基)丙烯酸酯之結構單元亦可具有如下分子結構:於上述含有羥基之(甲基)丙烯酸酯之結構單元中之羥基上,胺基甲酸酯鍵結有含有異氰酸基之(甲基)丙烯酸酯單體之異氰酸基。Specifically, the structural unit of the (meth)acrylate containing a polymerizable group may also have the following molecular structure: on the hydroxyl group in the structural unit of the above-mentioned (meth)acrylate containing a hydroxyl group, a urethane bond Bonded with isocyanate groups of (meth)acrylate monomers containing isocyanate groups.

具有聚合性基之含有聚合性基之(甲基)丙烯酸酯之結構單元可於丙烯酸系聚合物聚合後製備。例如,於(甲基)丙烯酸烷基酯單體與含有羥基之(甲基)丙烯酸酯單體共聚後,使含有羥基之(甲基)丙烯酸酯之結構單元之一部分中之羥基與含有異氰酸基之聚合性單體之異氰酸基進行胺基甲酸酯化反應,藉此,可獲得上述含有聚合性基之(甲基)丙烯酸酯之結構單元。The polymerizable group-containing (meth)acrylate structural unit can be prepared after the acrylic polymer is polymerized. For example, after the (meth)acrylic acid alkyl ester monomer and the hydroxyl-containing (meth)acrylate monomer are copolymerized, the hydroxyl group in a part of the structural unit of the hydroxyl-containing (meth)acrylate is made to contain isocyanide The isocyanate group of the polymerizable monomer of the acid group undergoes a urethane reaction, whereby the structural unit of the (meth)acrylate containing the polymerizable group can be obtained.

上述含有異氰酸基之(甲基)丙烯酸酯單體較佳為於分子中具有1個異氰酸基且具有1個(甲基)丙烯醯基。作為該單體,例如可例舉(甲基)丙烯酸2-異氰酸基乙酯。The aforementioned (meth)acrylate monomer containing an isocyanate group preferably has one isocyanate group and one (meth)acrylic acid group in the molecule. As the monomer, for example, 2-isocyanatoethyl (meth)acrylate may be mentioned.

本實施方式中之切晶帶20之黏著劑層22進而包含異氰酸酯化合物。異氰酸酯化合物之一部分亦可為藉由胺基甲酸酯化反應等進行反應後之狀態。 異氰酸酯化合物於分子中具有複數個異氰酸基。藉由使異氰酸酯化合物於分子中具有複數個異氰酸基,可使黏著劑層22中之丙烯酸系聚合物間之交聯反應進行。詳細而言,使異氰酸酯化合物之其中一個異氰酸基與丙烯酸系聚合物之羥基反應,使另一個異氰酸基與其他丙烯酸系聚合物之羥基反應,藉此,可使經由異氰酸酯化合物之交聯反應進行。The adhesive layer 22 of the dicing tape 20 in this embodiment further contains an isocyanate compound. A part of the isocyanate compound may be in a state after being reacted by a urethane reaction or the like. The isocyanate compound has a plurality of isocyanate groups in the molecule. By allowing the isocyanate compound to have a plurality of isocyanate groups in the molecule, the crosslinking reaction between the acrylic polymers in the adhesive layer 22 can proceed. In detail, one of the isocyanate groups of the isocyanate compound reacts with the hydroxyl group of the acrylic polymer, and the other isocyanate group reacts with the hydroxyl group of the other acrylic polymer. The joint reaction proceeds.

作為異氰酸酯化合物,例如可例舉脂肪族二異氰酸酯、脂環族二異氰酸酯、或芳香脂肪族二異氰酸酯等二異氰酸酯。The isocyanate compound may, for example, be a diisocyanate such as aliphatic diisocyanate, alicyclic diisocyanate, or araliphatic diisocyanate.

進而,作為異氰酸酯化合物,例如可例舉二異氰酸酯之二聚物或三聚物等聚合多異氰酸酯、多亞甲基多苯基多異氰酸酯。Furthermore, as the isocyanate compound, for example, polymeric polyisocyanates such as dimers or trimers of diisocyanates, and polymethylene polyphenyl polyisocyanates may be mentioned.

此外,作為異氰酸酯化合物,例如可例舉使上述異氰酸酯化合物之過剩量與含有活性氫之化合物反應所得之多異氰酸酯。作為含有活性氫之化合物,可例舉含有活性氫之低分子量化合物、含有活性氫之高分子量化合物等。 再者,作為異氰酸酯化合物,亦可使用脲基甲酸酯化多異氰酸酯、縮二脲化多異氰酸酯等。 上述異氰酸酯化合物可單獨使用1種或組合使用2種以上。Moreover, as an isocyanate compound, the polyisocyanate obtained by reacting the excess amount of the said isocyanate compound and the compound containing an active hydrogen can be mentioned, for example. Examples of compounds containing active hydrogen include low-molecular-weight compounds containing active hydrogen, and high-molecular-weight compounds containing active hydrogen. Furthermore, as an isocyanate compound, allophanate polyisocyanate, biuret polyisocyanate, etc. can also be used. The said isocyanate compound can be used individually by 1 type or in combination of 2 or more types.

作為上述異氰酸酯化合物,較佳為芳香族二異氰酸酯與含有活性氫之低分子量化合物之反應物。芳香族二異氰酸酯之反應物由於異氰酸基之反應速度相對較慢,故可抑制包含該反應物之黏著劑層22過度硬化。作為上述異氰酸酯化合物,較佳為於分子中具有3個以上異氰酸基。The isocyanate compound is preferably a reaction product of an aromatic diisocyanate and a low molecular weight compound containing active hydrogen. The reactant of the aromatic diisocyanate has a relatively slow reaction speed of the isocyanate group, so the adhesive layer 22 containing the reactant can be prevented from over-hardening. As said isocyanate compound, it is preferable to have 3 or more isocyanate groups in a molecule|numerator.

黏著劑層22中包含之聚合起始劑係可藉由所施加之熱或光之能量開始聚合反應之化合物。藉由使黏著劑層22包含聚合起始劑,於對黏著劑層22賦予熱能或光能時,可使丙烯酸系聚合物間之交聯反應進行。詳細而言,可於具有含有聚合性基之(甲基)丙烯酸酯之結構單元之丙烯酸系聚合物間,開始聚合性基彼此之聚合反應,使黏著劑層22硬化。藉此,可使黏著劑層22之黏著力降低,而於拾取步驟中容易地自硬化之黏著劑層22剝離黏晶層10。 作為聚合起始劑,例如採用光聚合起始劑或熱聚合起始劑等。聚合起始劑可使用一般之市售製品。The polymerization initiator contained in the adhesive layer 22 is a compound that can initiate a polymerization reaction by the energy of heat or light applied. By making the adhesive layer 22 contain a polymerization initiator, when heat or light energy is applied to the adhesive layer 22, the cross-linking reaction between the acrylic polymers can proceed. Specifically, it is possible to start the polymerization reaction between the polymerizable groups between the acrylic polymers having the structural unit of the (meth)acrylate containing the polymerizable group to harden the adhesive layer 22. Thereby, the adhesive force of the adhesive layer 22 can be reduced, and the die-bonding layer 10 can be easily peeled off from the hardened adhesive layer 22 in the pickup step. As the polymerization initiator, for example, a photopolymerization initiator, a thermal polymerization initiator, or the like is used. As the polymerization initiator, general commercially available products can be used.

黏著劑層22可包含除上述成分以外之其他成分。作為其他成分,例如可例舉:黏著賦予劑、塑化劑、填充劑、抗老化劑、抗氧化劑、紫外線吸收劑、光穩定劑、耐熱穩定劑、抗靜電劑、界面活性劑、輕剝離化劑等。其他成分之種類及使用量可根據目的適當選擇。The adhesive layer 22 may contain other components in addition to the above-mentioned components. Examples of other ingredients include: adhesion imparting agents, plasticizers, fillers, anti-aging agents, antioxidants, ultraviolet absorbers, light stabilizers, heat-resistant stabilizers, antistatic agents, surfactants, and light peeling agents.剂 etc. The types and usage amounts of other ingredients can be appropriately selected according to the purpose.

繼而,詳細地對本實施方式之切晶黏晶膜1進行說明。Next, the diced die bonding film 1 of this embodiment will be described in detail.

本實施方式之切晶黏晶膜1具備上述切晶帶20、及積層於該切晶帶20之黏著劑層22上之黏晶層10。於半導體積體電路之製造中,黏晶層10接著於半導體晶圓。The dicing die-cutting film 1 of this embodiment includes the above-mentioned die-cutting tape 20 and the die-cutting layer 10 laminated on the adhesive layer 22 of the die-cutting tape 20. In the manufacture of semiconductor integrated circuits, the die bonding layer 10 is attached to the semiconductor wafer.

黏晶層10可包含熱固性樹脂及熱塑性樹脂中之至少一者。黏晶層10較佳為包含熱固性樹脂及熱塑性樹脂。The die bonding layer 10 may include at least one of a thermosetting resin and a thermoplastic resin. The die bonding layer 10 preferably includes thermosetting resin and thermoplastic resin.

作為熱固性樹脂,例如可例舉:環氧樹脂、酚樹脂、胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、熱固性聚醯亞胺樹脂等。作為上述熱固性樹脂,僅採用1種或採用2種以上。就更少地含有可能成為作為黏晶對象之半導體晶片之腐蝕原因的離子性雜質等之方面而言,上述熱固性樹脂較佳為環氧樹脂。環氧樹脂之硬化劑較佳為酚樹脂。Examples of thermosetting resins include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, thermosetting polyimide resins, and the like. As the above-mentioned thermosetting resin, only one type or two or more types are used. In terms of containing less ionic impurities, etc., which may cause corrosion of the semiconductor wafer to be bonded, the thermosetting resin is preferably an epoxy resin. The hardener of the epoxy resin is preferably a phenol resin.

作為上述環氧樹脂,例如可例舉:雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型、乙內醯脲型、異氰尿酸三縮水甘油酯型、或縮水甘油胺型各環氧樹脂。As the above-mentioned epoxy resin, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type , Sulphur type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, triglycidyl isocyanurate type, or glycidylamine type Each epoxy resin.

酚樹脂可作為環氧樹脂之硬化劑發揮作用。作為酚樹脂,例如可例舉:酚醛清漆型酚樹脂、可溶酚醛型酚樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。 作為酚醛清漆型酚樹脂,例如可例舉:苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等。 上述酚樹脂僅採用1種或採用2種以上。Phenolic resin can act as a hardener for epoxy resin. As the phenol resin, for example, a novolak type phenol resin, a resol type phenol resin, polyhydroxystyrene such as poly(p-hydroxystyrene), and the like may be mentioned. As a novolak type phenol resin, a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tertiary butylphenol novolak resin, a nonylphenol novolak resin, etc. are mentioned, for example. Only one type or two or more types of the above-mentioned phenol resin are used.

於黏晶層10中,酚樹脂之羥基相對於每1當量環氧樹脂之環氧基,較佳為0.5當量以上2.0當量以下,更佳為0.7當量以上1.5當量以下。藉此,可使環氧樹脂與酚樹脂之硬化反應充分地進行。In the die bonding layer 10, the hydroxyl group of the phenol resin is preferably 0.5 equivalent or more and 2.0 equivalent or less, and more preferably 0.7 equivalent or more and 1.5 equivalent or less per equivalent of epoxy group of the epoxy resin. Thereby, the hardening reaction of the epoxy resin and the phenol resin can fully proceed.

於黏晶層10包含熱固性樹脂之情形時,黏晶層10中之該熱固性樹脂之含有比率相對於黏晶層10之總質量較佳為5質量%以上60質量%以下,更佳為10質量%以上50質量%以下。藉此,可於黏晶層10中適當表現作為熱硬化型接著劑之功能。When the die-bonding layer 10 contains thermosetting resin, the content of the thermosetting resin in the die-bonding layer 10 relative to the total mass of the die-bonding layer 10 is preferably not less than 5 mass% and not more than 60 mass%, more preferably 10 mass% % Above 50% by mass. Thereby, the function as a thermosetting adhesive can be appropriately expressed in the die-bonding layer 10.

作為可包含於黏晶層10之熱塑性樹脂,例如可例舉:天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍(商品名)等聚醯胺樹脂、苯氧樹脂、丙烯酸樹脂、PET或PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂等。 作為上述熱塑性樹脂,就因離子性雜質少且耐熱性高而可進一步確保黏晶層10之接著性之方面而言,較佳為丙烯酸樹脂。 上述熱塑性樹脂僅採用1種或採用2種以上。As the thermoplastic resin that can be included in the die bond layer 10, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, Ethylene-acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon (trade name), phenoxy resin, acrylic resin , Saturated polyester resins such as PET or PBT, polyamide imide resins, fluororesins, etc. As the above-mentioned thermoplastic resin, an acrylic resin is preferable in terms of ensuring the adhesiveness of the die-bonding layer 10 due to its low ionic impurities and high heat resistance. Only one type or two or more types of the above-mentioned thermoplastic resin are used.

上述丙烯酸樹脂較佳為分子中之結構單元中(甲基)丙烯酸烷基酯之結構單元以質量比率計最多之聚合物。作為該(甲基)丙烯酸烷基酯,例如可例舉(甲基)丙烯酸C2~C4烷基酯。 上述丙烯酸樹脂亦可包含來自能夠與(甲基)丙烯酸烷基酯單體共聚之其他單體成分之結構單元。 作為上述其他單體成分,例如可例舉:含有羧基之單體、酸酐單體、含有羥基之單體、含有縮水甘油基之單體、含有磺酸基之單體、含有磷酸基之單體、丙烯醯胺、丙烯腈等含有官能基之單體、或其他各種多官能性單體等。 就可於黏晶層10中發揮更高之凝集力之方面而言,上述丙烯酸樹脂較佳為(甲基)丙烯酸烷基酯(特別是烷基部分之碳數為4以下之(甲基)丙烯酸烷基酯)與含有羧基之單體與含有氮原子之單體與多官能性單體(特別是聚縮水甘油基系多官能單體)之共聚物,更佳為丙烯酸乙酯與丙烯酸丁酯與丙烯酸與丙烯腈與(甲基)丙烯酸聚縮水甘油酯之共聚物。The above-mentioned acrylic resin is preferably a polymer in which the structural unit of the alkyl (meth)acrylate is the largest in terms of mass ratio among the structural units in the molecule. As the alkyl (meth)acrylate, for example, a C2-C4 alkyl (meth)acrylate may be mentioned. The above-mentioned acrylic resin may also contain structural units derived from other monomer components that can be copolymerized with the alkyl (meth)acrylate monomer. Examples of the above-mentioned other monomer components include: carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, and phosphoric acid group-containing monomers , Acrylamide, acrylonitrile and other monomers containing functional groups, or various other multifunctional monomers. In terms of being able to exert higher cohesive force in the die-bonding layer 10, the above-mentioned acrylic resin is preferably an alkyl (meth)acrylate (especially (methyl) with a carbon number of 4 or less in the alkyl part). Alkyl acrylate) and a copolymer of monomers containing carboxyl groups, monomers containing nitrogen atoms, and polyfunctional monomers (especially polyglycidyl-based polyfunctional monomers), more preferably ethyl acrylate and butyl acrylate A copolymer of ester and acrylic acid and acrylonitrile and (meth)acrylic acid polyglycidyl ester.

就容易將黏晶層10之彈性及黏性設定為所需之範圍內之方面而言,上述丙烯酸樹脂之玻璃轉移溫度(Tg)較佳為5℃以上35℃以下,更佳為10℃以上30℃以下。In terms of the ease of setting the elasticity and viscosity of the die-bonding layer 10 within the required range, the glass transition temperature (Tg) of the acrylic resin is preferably 5°C or more and 35°C or less, more preferably 10°C or more Below 30°C.

於黏晶層10包含熱固性樹脂及熱塑性樹脂之情形時,黏晶層10中之上述熱塑性樹脂之含有比率相對於除填料以外之有機成分(例如,熱固性樹脂、熱塑性樹脂、硬化觸媒等、矽烷偶合劑、染料)之總質量較佳為30質量%以上70質量%以下,更佳為40質量%以上60質量%以下,進而較佳為45質量%以上55質量%以下。再者,藉由改變熱固性樹脂之含有比率,可調整黏晶層10之彈性及黏性。When the die-bonding layer 10 contains thermosetting resin and thermoplastic resin, the content of the above-mentioned thermoplastic resin in the die-bonding layer 10 is relative to the organic components other than fillers (e.g., thermosetting resin, thermoplastic resin, curing catalyst, etc., silane The total mass of the coupling agent and dye) is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less, and still more preferably 45% by mass or more and 55% by mass or less. Furthermore, by changing the content ratio of the thermosetting resin, the elasticity and viscosity of the die-bonding layer 10 can be adjusted.

於黏晶層10之熱塑性樹脂具有熱固性官能基之情形時,例如可採用含有熱固性官能基之丙烯酸樹脂作為該熱塑性樹脂。該含有熱固性官能基之丙烯酸樹脂較佳為於分子中以最多之質量比率包含來自(甲基)丙烯酸烷基酯之結構單元。作為該(甲基)丙烯酸烷基酯,例如可例舉上述例示之(甲基)丙烯酸(甲基)烷基酯。 另一方面,作為含有熱固性官能基之丙烯酸樹脂中之熱固性官能基,例如可例舉縮水甘油基、羧基、羥基、異氰酸基等。 黏晶層10較佳為包含含有熱固性官能基之丙烯酸樹脂及硬化劑。作為硬化劑,可例舉作為可包含於黏著劑層22之硬化劑而例示者。於含有熱固性官能基之丙烯酸樹脂中之熱固性官能基為縮水甘油基之情形時,較佳為使用具有複數個酚結構之化合物作為硬化劑。例如,可使用上述各種酚樹脂作為硬化劑。When the thermoplastic resin of the die bonding layer 10 has a thermosetting functional group, for example, an acrylic resin containing a thermosetting functional group can be used as the thermoplastic resin. The acrylic resin containing a thermosetting functional group preferably contains a structural unit derived from an alkyl (meth)acrylate in the molecule with the largest mass ratio. As this alkyl (meth)acrylate, the (meth)alkyl (meth)acrylate exemplified above can be mentioned, for example. On the other hand, as the thermosetting functional group in the acrylic resin containing a thermosetting functional group, for example, a glycidyl group, a carboxyl group, a hydroxyl group, an isocyanate group, etc. may be mentioned. The die bonding layer 10 preferably includes an acrylic resin containing a thermosetting functional group and a hardener. As a curing agent, what was exemplified as a curing agent that can be contained in the adhesive layer 22 may be mentioned. When the thermosetting functional group in the acrylic resin containing the thermosetting functional group is a glycidyl group, it is preferable to use a compound having a plurality of phenol structures as the hardener. For example, the above-mentioned various phenol resins can be used as hardeners.

黏晶層10較佳為含有填料。藉由改變黏晶層10中之填料之量,可更容易地調整黏晶層10之彈性及黏性。進而,可調整黏晶層10之導電性、導熱性、彈性模數等物性。 作為填料,可例舉無機填料及有機填料。填料較佳為無機填料。 作為無機填料,例如可例舉包含氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、氮化硼、結晶質氧化矽或非晶質氧化矽等氧化矽等之填料。又,作為無機填料之材質,可例舉鋁、金、銀、銅、鎳等金屬單質、或合金等。亦可為硼酸鋁晶鬚、非晶碳黑、石墨等填料。填料之形狀亦可為球狀、針狀、片狀等各種形狀。填料僅採用上述1種或採用2種以上。The crystal bonding layer 10 preferably contains a filler. By changing the amount of filler in the die-bonding layer 10, the elasticity and viscosity of the die-bonding layer 10 can be adjusted more easily. Furthermore, the electrical conductivity, thermal conductivity, and elastic modulus of the die-bonding layer 10 can be adjusted. As the filler, an inorganic filler and an organic filler may be mentioned. The filler is preferably an inorganic filler. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, boron nitride, and crystalline materials. Filler of silicon oxide, such as silicon oxide or amorphous silicon oxide. In addition, as the material of the inorganic filler, a simple metal such as aluminum, gold, silver, copper, nickel, etc., or an alloy may be mentioned. It can also be aluminum borate whiskers, amorphous carbon black, graphite and other fillers. The shape of the filler can also be spherical, needle-like, flake-like and other shapes. Only one of the above-mentioned fillers or two or more of the above-mentioned fillers are used.

上述填料之平均粒徑較佳為0.005 μm以上10 μm以下,更佳為0.005 μm以上1 μm以下。藉由使上述平均粒徑為0.005 μm以上,對半導體晶圓等被接著體之潤濕性、接著性進一步提高。藉由使上述平均粒徑為10 μm以下,可更充分地發揮所添加之填料之特性,又,可進一步發揮黏晶層10之耐熱性。填料之平均粒徑例如可使用光度式粒度分佈計(例如,製品名「LA-910」,堀場製作所公司製造)求出。The average particle size of the filler is preferably 0.005 μm or more and 10 μm or less, more preferably 0.005 μm or more and 1 μm or less. By making the above-mentioned average particle diameter 0.005 μm or more, the wettability and adhesiveness to adherends such as semiconductor wafers are further improved. By making the above-mentioned average particle diameter 10 μm or less, the characteristics of the filler added can be more fully exhibited, and the heat resistance of the die-bonding layer 10 can be further exhibited. The average particle diameter of the filler can be determined using, for example, a photometric particle size distribution meter (for example, product name "LA-910", manufactured by Horiba Manufacturing Co., Ltd.).

於黏晶層10包含填料之情形時,上述填料之含有比率相對於黏晶層10之總質量較佳為30質量%以上70質量%以下,更佳為40質量%以上60質量%以下,進而較佳為42質量%以上55質量%以下。When the die-bonding layer 10 contains a filler, the content of the filler relative to the total mass of the die-bonding layer 10 is preferably 30% by mass to 70% by mass, more preferably 40% by mass to 60% by mass, and further Preferably it is 42 mass% or more and 55 mass% or less.

黏晶層10亦可視需要包含其他成分。作為上述其他成分,例如可例舉:硬化觸媒、阻燃劑、矽烷偶合劑、離子捕捉劑、染料等。 作為阻燃劑,例如可例舉:三氧化二銻、五氧化二銻、溴化環氧樹脂等。 作為矽烷偶合劑,例如可例舉:β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。 作為離子捕捉劑,例如可例舉:水滑石類、氫氧化鉍、苯并三唑等。 上述其他添加劑僅採用1種或採用2種以上。The die-bonding layer 10 may also contain other components as needed. Examples of the above-mentioned other components include hardening catalysts, flame retardants, silane coupling agents, ion scavengers, dyes, and the like. As the flame retardant, for example, antimony trioxide, antimony pentoxide, brominated epoxy resin, etc. may be mentioned. As the silane coupling agent, for example, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyl Methyl diethoxysilane and so on. As an ion scavenger, hydrotalcite, bismuth hydroxide, benzotriazole, etc. are mentioned, for example. Only one type or two or more types of the above-mentioned other additives are used.

就容易調整彈性及黏性之方面而言,黏晶層10較佳為包含熱塑性樹脂(特別是丙烯酸樹脂)、熱固性樹脂、及填料。 於黏晶層10中,丙烯酸樹脂等熱塑性樹脂相對於除填料以外之有機成分之總質量之含有比率較佳為30質量%以上70質量%以下,更佳為40質量%以上60質量%以下,進而較佳為45質量%以上55質量%以下。 相對於黏晶層10之總質量,填料之含有比率較佳為30質量%以上70質量%以下,更佳為40質量%以上60質量%以下,進而較佳為42質量%以上55質量%以下。In terms of easy adjustment of elasticity and viscosity, the die-bonding layer 10 preferably includes a thermoplastic resin (especially an acrylic resin), a thermosetting resin, and a filler. In the die bond layer 10, the content ratio of the thermoplastic resin such as acrylic resin to the total mass of the organic components other than the filler is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less, More preferably, it is 45% by mass or more and 55% by mass or less. Relative to the total mass of the die bond layer 10, the filler content is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less, and still more preferably 42% by mass or more and 55% by mass or less .

黏晶層10之厚度無特別限定,例如為1 μm以上200 μm以下。該厚度之上限值較佳為100 μm,更佳為80 μm。該厚度之下限值較佳為3 μm,更佳為5 μm。再者,於黏晶層10為積層體之情形時,上述厚度為積層體之總厚度。The thickness of the die bond layer 10 is not particularly limited, and is, for example, 1 μm or more and 200 μm or less. The upper limit of the thickness is preferably 100 μm, more preferably 80 μm. The lower limit of the thickness is preferably 3 μm, more preferably 5 μm. Furthermore, when the die-bonding layer 10 is a laminated body, the above-mentioned thickness is the total thickness of the laminated body.

黏晶層10之玻璃轉移溫度(Tg)較佳為0℃以上,更佳為10℃以上。藉由使上述玻璃轉移溫度為0℃以上,可藉由冷擴容易地將黏晶層10切斷。黏晶層10之玻璃轉移溫度之上限例如為100℃。The glass transition temperature (Tg) of the die-bonding layer 10 is preferably 0°C or higher, more preferably 10°C or higher. By setting the above-mentioned glass transition temperature to 0° C. or higher, the adherent layer 10 can be easily cut by cold expansion. The upper limit of the glass transition temperature of the die-bonding layer 10 is, for example, 100°C.

黏晶層10例如亦可如圖1所示具有單層構造。本說明書中,單層係指僅具有由相同之組合物形成之層。積層有複數個由相同之組合物形成之層之形態亦為單層。 另一方面,黏晶層10例如亦可具有積層有分別由2種以上不同之組合物形成之層之多層構造。The die-bonding layer 10 may also have a single-layer structure as shown in FIG. 1, for example. In this specification, a single layer refers to only a layer formed of the same composition. It is also a single layer in the form of multiple layers formed by the same composition. On the other hand, the die-bonding layer 10 may have, for example, a multilayer structure in which layers formed of two or more different compositions are laminated.

於本實施方式之切晶黏晶膜1中,於使用時,藉由照射例如紫外線,使黏著劑層22硬化。詳細而言,於一面接著有半導體晶圓之黏晶層10與貼合於該黏晶層10之另一面之黏著劑層22積層之狀態下,將紫外線等至少照射至黏著劑層22。例如,自配置有基材層21之側照射紫外線等,經過基材層21之紫外線等到達黏著劑層22。藉由照射紫外線等,使黏著劑層22硬化。 藉由在照射後使黏著劑層22硬化,可降低黏著劑層22之黏著力,因此於照射後可相對較容易地自黏著劑層22剝離黏晶層10(接著有半導體晶圓之狀態)。In the chip adhesive film 1 of this embodiment, the adhesive layer 22 is hardened by irradiating, for example, ultraviolet rays during use. In detail, in a state where the die bonding layer 10 of a semiconductor wafer and the adhesive layer 22 attached to the other side of the die bonding layer 10 are laminated on one side, at least ultraviolet rays or the like are irradiated to the adhesive layer 22. For example, ultraviolet rays and the like are irradiated from the side where the base layer 21 is arranged, and the ultraviolet rays and the like passing through the base layer 21 reach the adhesive layer 22. By irradiating ultraviolet rays or the like, the adhesive layer 22 is cured. By hardening the adhesive layer 22 after irradiation, the adhesive force of the adhesive layer 22 can be reduced. Therefore, the adhesive layer 10 can be relatively easily peeled off from the adhesive layer 22 after irradiation (the state of the semiconductor wafer then) .

本實施方式之切晶黏晶膜1亦可具備於使用前之狀態下覆蓋黏晶層10之一面(黏晶層10之未與黏著劑層22重疊之面)之剝離片材。剝離片材係用於保護黏晶層10,於將被接著體(例如半導體晶圓)貼附於黏晶層10之前剝離。 作為該剝離片材,可採用與上述剝離片材相同者。該剝離片材可用作用以支持黏晶層10之支持材。剝離片材於將黏晶層10重疊於黏著劑層22上時適宜地使用。詳細而言,於剝離片材與黏晶層10積層之狀態下將黏晶層10重疊於黏著劑層22,重疊後將剝離片材剝離(轉印),藉此,可於黏著劑層22上重疊黏晶層10。The chip adhesive film 1 of this embodiment may also be provided with a peeling sheet covering one surface of the die bond layer 10 (the side of the die bond layer 10 that does not overlap the adhesive layer 22) in the state before use. The peeling sheet is used to protect the die-bonding layer 10 and is peeled off before attaching the adherend (for example, a semiconductor wafer) to the die-bonding layer 10. As this peeling sheet, the same thing as the said peeling sheet can be used. The release sheet can be used as a support material to support the die bonding layer 10. The peeling sheet is suitably used when stacking the die-bonding layer 10 on the adhesive layer 22. In detail, the die-bonding layer 10 is overlapped on the adhesive layer 22 in the state where the release sheet and die-bonding layer 10 are laminated, and after the overlap, the release sheet is peeled off (transferred), whereby the adhesive layer 22 can be Overlap the bonding layer 10.

本實施方式之切晶黏晶膜1如上所述般構成,故可於擴張後良好地維持切口。The diced chip mucosa 1 of the present embodiment is configured as described above, so the incision can be maintained well after expansion.

繼而,對本實施方式之切晶帶20、及切晶黏晶膜1之製造方法進行說明。Next, the manufacturing method of the dicing tape 20 and the dicing die sticking film 1 of this embodiment is demonstrated.

本實施方式之切晶黏晶膜1之製造方法具備: 製造切晶帶20之步驟(切晶帶之製造方法)、及於所製造之切晶帶20重疊黏晶層10而製造切晶黏晶膜1之步驟。The manufacturing method of the dicing die bonding film 1 of this embodiment includes: The step of manufacturing the dicing tape 20 (the manufacturing method of the dicing tape), and the step of overlapping the die-bonding layer 10 on the manufactured dicing tape 20 to produce the dicing die-bonding film 1.

切晶帶之製造方法(製造切晶帶之步驟)具備: 合成步驟,其合成丙烯酸系聚合物; 黏著劑層製作步驟,其使溶劑自包含上述丙烯酸系聚合物、異氰酸酯化合物、聚合起始劑、溶劑、及根據目的適當追加之其他成分之黏著劑組合物揮發而製作黏著劑層22;及 積層步驟,其藉由將黏著劑層22與基材層21貼合,而使基材層21與黏著劑層22積層。The manufacturing method of the dicing tape (the steps of manufacturing the dicing tape) has: Synthesis step, which synthesizes acrylic polymer; The adhesive layer preparation step, which volatilizes the solvent from the adhesive composition containing the above-mentioned acrylic polymer, isocyanate compound, polymerization initiator, solvent, and other components appropriately added according to the purpose to produce the adhesive layer 22; and In the laminating step, the base layer 21 and the adhesive layer 22 are laminated by bonding the adhesive layer 22 and the base layer 21 together.

於合成步驟中,例如,藉由使(甲基)丙烯酸C9~C11烷基酯單體與含有羥基之(甲基)丙烯酸酯單體自由基聚合,而合成丙烯酸系聚合物中間物。 自由基聚合可藉由一般之方法進行。例如,一面使上述各單體溶解於溶劑並進行加熱,一面進行攪拌,添加聚合起始劑,藉此,可合成丙烯酸系聚合物中間物。為了調整丙烯酸系聚合物之分子量,亦可於鏈轉移劑之存在下進行聚合。 繼而,藉由胺基甲酸酯化反應使丙烯酸系聚合物中間物中包含之含有羥基之(甲基)丙烯酸酯之結構單元之一部分之羥基與含有異氰酸基之聚合性單體之異氰酸基鍵結。藉此,含有羥基之(甲基)丙烯酸酯之結構單元之一部分成為含有聚合性基之(甲基)丙烯酸酯之結構單元。 胺基甲酸酯化反應可藉由一般之方法進行。例如,於溶劑及胺基甲酸酯化觸媒之存在下進行加熱並對丙烯酸系聚合物中間物與含有異氰酸基之聚合性單體進行攪拌。藉此,可使含有異氰酸基之聚合性單體之異氰酸基,胺基甲酸酯鍵結至丙烯酸系聚合物中間物之一部分羥基上。In the synthesis step, for example, the acrylic polymer intermediate is synthesized by radical polymerization of (meth)acrylic acid C9-C11 alkyl ester monomer and hydroxyl-containing (meth)acrylate monomer. Free radical polymerization can be carried out by general methods. For example, while the above-mentioned monomers are dissolved in a solvent and heated, a polymerization initiator is added while stirring, whereby an acrylic polymer intermediate can be synthesized. In order to adjust the molecular weight of the acrylic polymer, polymerization can also be carried out in the presence of a chain transfer agent. Then, a part of the hydroxyl group of the structural unit of the hydroxyl-containing (meth)acrylate contained in the acrylic polymer intermediate and the isocyanate-containing polymerizable monomer are separated by the urethane reaction. The cyanate group is bonded. Thereby, a part of the structural unit of the (meth)acrylate containing a hydroxyl group becomes a structural unit of the (meth)acrylate containing a polymerizable group. The urethane reaction can be carried out by a general method. For example, heating is performed in the presence of a solvent and a urethane catalyst, and the acrylic polymer intermediate and the isocyanate group-containing polymerizable monomer are stirred. Thereby, the isocyanate group and the urethane of the polymerizable monomer containing the isocyanate group can be bonded to a part of the hydroxyl group of the acrylic polymer intermediate.

於黏著劑層製作步驟中,例如,使丙烯酸系聚合物、異氰酸酯化合物、及聚合起始劑溶解於溶劑,製備黏著劑組合物。藉由改變溶劑之量,可調整組合物之黏度。繼而,將黏著劑組合物塗佈於剝離片材。作為塗佈方法,例如採用輥塗佈、網版塗佈、凹版塗佈等一般之塗佈方法。藉由對塗佈之組合物實施去溶劑處理或固化處理等,而使塗佈之黏著劑組合物固化,製作黏著劑層22。In the adhesive layer preparation step, for example, an acrylic polymer, an isocyanate compound, and a polymerization initiator are dissolved in a solvent to prepare an adhesive composition. By changing the amount of solvent, the viscosity of the composition can be adjusted. Then, the adhesive composition is applied to the release sheet. As the coating method, for example, general coating methods such as roll coating, screen coating, and gravure coating are used. By performing solvent removal treatment or curing treatment on the coated composition, the coated adhesive composition is cured, and the adhesive layer 22 is produced.

於積層步驟中,將與剝離片材重疊之狀態之黏著劑層22與基材層21重疊積層。再者,剝離片材於使用前可為與黏著劑層22重疊之狀態。 再者,為了促進交聯劑與丙烯酸系聚合物之反應、及促進交聯劑與基材層21之表面部分之反應,亦可於積層步驟後,於50℃環境下實施48小時之老化處理步驟。 再者,基材層21可使用市售之膜等,亦可藉由一般之方法進行製膜而製作。作為製膜方法,例如可例舉:壓延製膜法、有機溶劑中之流延法、密閉系統中之吹脹擠壓法、T模擠壓法、乾式層壓法等。亦可採用共擠壓成形法。In the lamination step, the adhesive layer 22 and the base material layer 21 in a state of being overlapped with the release sheet are laminated and laminated. Furthermore, the release sheet may be in a state overlapping with the adhesive layer 22 before use. Furthermore, in order to promote the reaction between the crosslinking agent and the acrylic polymer and the reaction between the crosslinking agent and the surface of the base layer 21, it is also possible to perform an aging treatment at 50°C for 48 hours after the lamination step step. Furthermore, the base material layer 21 may use a commercially available film, etc., and may also be produced by film formation by a general method. As a film forming method, for example, a calendering film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a dry lamination method, etc. may be mentioned. Co-extrusion can also be used.

藉由該等步驟,可製造切晶帶20。Through these steps, the dicing tape 20 can be manufactured.

切晶黏晶膜之製造方法(製造切晶黏晶膜之步驟)具備: 樹脂組合物製備步驟,其製備用以形成黏晶層10之樹脂組合物; 黏晶層製作步驟,其由樹脂組合物製作黏晶層10;及 貼附步驟,其將黏晶層10貼附於如上所述般製造之切晶帶20之黏著劑層22。The manufacturing method of chip adhesive film (the step of manufacturing chip adhesive film) includes: Resin composition preparation step, which prepares the resin composition used to form the die-bonding layer 10; The die bonding layer manufacturing step, which is to fabricate the die bonding layer 10 from the resin composition; and In the attaching step, the die bonding layer 10 is attached to the adhesive layer 22 of the dicing tape 20 manufactured as described above.

於樹脂組合物製備步驟中,例如將環氧樹脂、環氧樹脂之硬化觸媒、丙烯酸樹脂、酚樹脂、溶劑等混合,使各樹脂溶解於溶劑,藉此製備樹脂組合物。藉由改變溶劑之量,可調整組合物之黏度。再者,作為該等樹脂,可使用市售之製品。In the resin composition preparation step, for example, epoxy resin, epoxy resin curing catalyst, acrylic resin, phenol resin, solvent, etc. are mixed, and each resin is dissolved in the solvent, thereby preparing the resin composition. By changing the amount of solvent, the viscosity of the composition can be adjusted. Furthermore, as these resins, commercially available products can be used.

於黏晶層製作步驟中,例如將如上所述般製備之樹脂組合物塗佈於剝離片材。作為塗佈方法,無特別限定,例如採用輥塗佈、網版塗佈、凹版塗佈等一般之塗佈方法。繼而,視需要藉由去溶劑處理或硬化處理等使塗佈之組合物固化,製作黏晶層10。In the manufacturing step of the die-bonding layer, for example, the resin composition prepared as described above is applied to the release sheet. The coating method is not particularly limited. For example, general coating methods such as roll coating, screen coating, and gravure coating are used. Then, if necessary, the applied composition is cured by solvent removal treatment or hardening treatment, etc., to produce the crystal bonding layer 10.

於貼附步驟中,分別自切晶帶20之黏著劑層22、及黏晶層10將剝離片材剝離,以黏晶層10與黏著劑層22直接接觸之方式使兩者貼合。例如,可藉由壓接進行貼合。貼合時之溫度無特別限定,例如為30℃以上50℃以下,較佳為35℃以上45℃以下。貼合時之線壓無特別限定,較佳為0.1 kgf/cm以上20 kgf/cm以下,更佳為1 kgf/cm以上10 kgf/cm以下。In the attaching step, the peeling sheet is peeled off from the adhesive layer 22 of the dicing tape 20 and the die-bonding layer 10 respectively, and the die-bonding layer 10 and the adhesive layer 22 are bonded together in such a way that the die-bonding layer 10 and the adhesive layer 22 are in direct contact. For example, it can be bonded by crimping. The temperature at the time of bonding is not particularly limited. For example, it is 30°C or more and 50°C or less, preferably 35°C or more and 45°C or less. The linear pressure during bonding is not particularly limited, but is preferably 0.1 kgf/cm or more and 20 kgf/cm or less, and more preferably 1 kgf/cm or more and 10 kgf/cm or less.

如上所述般製造之切晶黏晶膜1例如可用作用以製造半導體積體電路之輔助用具。以下,對使用中之具體例進行說明。The diced die bond film 1 manufactured as described above can be used as an auxiliary tool for manufacturing semiconductor integrated circuits, for example. The following describes specific examples in use.

製造半導體積體電路之方法一般具備自形成有電路面之半導體晶圓切取晶片進行組裝之步驟。 該步驟例如具有:半切步驟,其為了藉由切斷處理將半導體晶圓加工成晶片(晶粒)而於半導體晶圓形成溝槽,進而對半導體晶圓進行研削使厚度變薄;安裝步驟,其將經半切加工之半導體晶圓之一面(例如,與電路面為相反側之面)貼附於黏晶層10,將半導體晶圓固定於切晶帶20;擴張步驟,其擴大經半切加工之半導體晶片彼此之間隔;拾取步驟,其於黏晶層10與黏著劑層22之間進行剝離,於貼附有黏晶層10之狀態下取出半導體晶片(晶粒);及黏晶步驟,其將貼附有黏晶層10之狀態之半導體晶片(晶粒)接著於被接著體。實施該等步驟時,本實施方式之切晶帶(切晶黏晶膜)用作製造輔助用具。The method of manufacturing a semiconductor integrated circuit generally includes a step of cutting and assembling a chip from a semiconductor wafer with a circuit surface formed thereon. This step includes, for example, a half-cutting step, which forms trenches in the semiconductor wafer in order to process the semiconductor wafer into a wafer (die) by a cutting process, and then grinds the semiconductor wafer to make the thickness thin; the mounting step, It attaches one side of the semi-cut semiconductor wafer (for example, the side opposite to the circuit surface) to the die bonding layer 10, and fixes the semiconductor wafer to the die dicing tape 20; in the expansion step, it is expanded through the half-cut process The distance between the semiconductor wafers; the picking step, which peels off between the die bonding layer 10 and the adhesive layer 22, and taking out the semiconductor wafer (die) with the die bonding layer 10 attached; and the die bonding step, It attaches the semiconductor chip (die) with the die bonding layer 10 attached to the bonded body. When performing these steps, the chip dicing tape (chip slicing film) of this embodiment is used as a manufacturing auxiliary tool.

於半切步驟中,如圖2A~圖2D所示,實施用以將半導體積體電路切斷成小片(晶粒)之半切加工。詳細而言,於半導體晶圓之與電路面為相反側之面貼附晶圓加工用帶T。又,於晶圓加工用帶T安裝切晶環R。於貼附晶圓加工用帶T之狀態下,形成分割用溝槽。於形成有溝槽之面貼附背面研磨帶G,另一方面,將開始貼附之晶圓加工用帶T剝離。於貼附背面研磨帶G之狀態下,實施研削加工直至半導體晶圓成為特定之厚度。In the half-cutting step, as shown in FIGS. 2A to 2D, a half-cutting process for cutting the semiconductor integrated circuit into small pieces (die) is performed. Specifically, the wafer processing tape T is attached to the surface of the semiconductor wafer on the opposite side to the circuit surface. In addition, a dicing ring R is attached to the tape T for wafer processing. In the state where the tape T for wafer processing is attached, grooves for division are formed. The back polishing tape G is attached to the surface where the grooves are formed, and on the other hand, the wafer processing tape T that has been attached is peeled off. In the state where the back grinding tape G is attached, the grinding process is performed until the semiconductor wafer has a specific thickness.

於安裝步驟中,如圖3A~圖3B所示,於切晶帶20之黏著劑層22安裝切晶環R後,於露出之黏晶層10之面貼附經半切加工之半導體晶圓。其後,自半導體晶圓剝離背面研磨帶G。In the mounting step, as shown in FIGS. 3A to 3B, after the dicing ring R is mounted on the adhesive layer 22 of the dicing tape 20, the semi-cut semiconductor wafer is attached to the exposed surface of the die bonding layer 10. After that, the back polishing tape G is peeled off from the semiconductor wafer.

於擴張步驟中,如圖4A~圖4C所示,於切晶帶20之黏著劑層22安裝切晶環R後,固定於擴張裝置之保持器H。藉由自切晶黏晶膜1之下側頂起擴張裝置所具備之頂起構件U,將切晶黏晶膜1以沿面方向擴張之方式進行拉伸。藉此,於特定之溫度條件下,將經半切加工之半導體晶圓切斷。上述溫度條件例如為-20~5℃,較佳為-15~0℃,更佳為-10~-5℃。藉由使頂起構件U下降,解除擴張狀態(至此為冷擴步驟)。 進而,於擴張步驟中,如圖5A~圖5B所示,於更高之溫度條件下,以擴大面積之方式拉伸切晶帶20。藉此,將切斷之相鄰之半導體晶片於膜面之面方向拉離,進一步擴大間隔(常溫擴張步驟)。 於此,為了維持切斷(小片化)之半導體晶圓之間隔,使切晶帶20之一部分熱縮(熱收縮)。具體而言,使較與半導體晶圓重疊之部分更外側之部分熱縮(熱收縮),固定切晶帶20。In the expansion step, as shown in FIGS. 4A to 4C, after installing the dicing ring R on the adhesive layer 22 of the dicing tape 20, it is fixed to the holder H of the expansion device. By pushing up the lifting member U of the expansion device from the lower side of the dicing mucous membrane 1, the dicing mucous membrane 1 is stretched in a manner of expanding in the plane direction. In this way, under a specific temperature condition, the semi-cut semiconductor wafer is cut. The above-mentioned temperature conditions are, for example, -20 to 5°C, preferably -15 to 0°C, and more preferably -10 to -5°C. By lowering the lifting member U, the expanded state is released (the cold expansion step so far). Furthermore, in the expansion step, as shown in FIGS. 5A to 5B, under higher temperature conditions, the dicing tape 20 is stretched in a manner of expanding the area. Thereby, the cut adjacent semiconductor wafers are pulled apart in the plane direction of the film surface to further expand the gap (normal temperature expansion step). Herein, in order to maintain the interval between the cut (divided) semiconductor wafers, a part of the dicing tape 20 is heat-shrinked (heat-shrinked). Specifically, the part outside the part overlapping with the semiconductor wafer is heat-shrinked (heat-shrinked), and the dicing tape 20 is fixed.

於拾取步驟中,如圖6所示,將貼附有黏晶層10之狀態之半導體晶片自切晶帶20之黏著劑層22剝離。詳細而言,使頂銷構件P上升,介隔切晶帶20將作為拾取對象之半導體晶片頂起。藉由吸附治具J保持被頂起之半導體晶片。 於黏晶步驟中,將貼附有黏晶層10之狀態之半導體晶片接著於被接著體。In the pick-up step, as shown in FIG. 6, the semiconductor wafer in the state where the die-bonding layer 10 is attached is peeled off from the adhesive layer 22 of the die-cutting tape 20. In detail, the ejector pin member P is raised, and the intersecting wafer tape 20 ejects the semiconductor wafer to be picked up. The lifted semiconductor chip is held by the suction jig J. In the die bonding step, the semiconductor chip in the state where the die bonding layer 10 is attached is attached to the adherend.

由本說明書所揭示之事項包含以下者。 (1) 一種切晶帶,其係具備基材層、及與該基材層重疊之黏著劑層者,其 於23℃下經延伸時之永久變形率為35%以上。 (2) 一種切晶帶,其係具備基材層、及與該基材層重疊之黏著劑層者,其 於-5℃下經延伸時之永久變形率為35%以上。 (3) 如上述(1)或(2)中記載之切晶帶,其中關於藉由動態黏彈性拉伸試驗測定之彈性模數, 60℃下之彈性模數(B)相對於23℃下之彈性模數(A)之比(B/A)為0.17以上0.50以下。 (4) 如上述(1)至(3)中任一項中記載之切晶帶,其中關於藉由動態黏彈性拉伸試驗測定之彈性模數, 23℃下之彈性模數(A)為40 MPa以上300 MPa以下, 60℃下之彈性模數(B)為8 MPa以上100 MPa以下。 (5) 如上述(1)至(4)中任一項中記載之切晶帶,其中關於藉由動態黏彈性拉伸試驗測定之彈性模數, 100℃下之彈性模數(C)為0.5 MPa以上20 MPa以下。 (6) 如上述(1)至(5)中任一項中記載之切晶帶,其中上述基材層包含複數層。 (7) 如上述(1)至(6)中任一項中記載之切晶帶,其中上述基材層包含至少3層,具有由非彈性體形成之2個非彈性體層、及配置於2個上述非彈性體層之間且由彈性體形成之彈性體層。 (8) 如上述(1)至(7)中任一項中記載之切晶帶,其中上述非彈性體層包含聚丙烯。 (9) 如上述(1)至(8)中任一項中記載之切晶帶,其中上述彈性體層包含乙烯-乙酸乙烯酯共聚物(EVA)、或α-烯烴系熱塑性彈性體中之至少一者。 (10) 如上述(7)至(9)中任一項中記載之切晶帶,其中上述非彈性體層之1層(X層)之厚度相對於上述彈性體層(Y層)之厚度之比(X層/Y層)為0.05以上0.25以下之範圍。 (11) 如上述(1)至(10)中任一項中記載之切晶帶,其中上述基材層之厚度為60 μm以上160 μm以下。 (12) 如上述(1)至(11)中任一項中記載之切晶帶,其中上述黏著劑層包含丙烯酸系聚合物,該丙烯酸系聚合物於分子中至少具有(甲基)丙烯酸烷基酯之結構單元、含有羥基之(甲基)丙烯酸酯之結構單元、及含有聚合性基之(甲基)丙烯酸酯之結構單元。 (13) 如上述(12)中記載之切晶帶,其中上述黏著劑層進而包含異氰酸酯化合物、及聚合起始劑。 (14) 如上述(1)至(13)中任一項中記載之切晶帶,其中上述黏著劑層之厚度相對於上述切晶帶之總厚度所占之比率為1%以上15%以下。 (15) 一種切晶黏晶膜,其具備如上述(1)至(14)中任一項中記載之切晶帶、及積層於該切晶帶之黏著劑層上之黏晶層。The matters disclosed in this manual include the following. (1) A dicing tape, which is provided with a substrate layer and an adhesive layer overlapped with the substrate layer, and The permanent deformation rate when stretched at 23°C is over 35%. (2) A dicing tape, which is provided with a substrate layer and an adhesive layer overlapped with the substrate layer, and The permanent deformation rate when stretched at -5°C is over 35%. (3) As described in (1) or (2) above, regarding the elastic modulus measured by dynamic viscoelastic tensile test, The ratio (B/A) of the elastic modulus (B) at 60°C to the elastic modulus (A) at 23°C is 0.17 or more and 0.50 or less. (4) The dicing tape described in any one of (1) to (3) above, wherein the elastic modulus measured by a dynamic viscoelastic tensile test is The modulus of elasticity (A) at 23°C is above 40 MPa and below 300 MPa, The modulus of elasticity (B) at 60°C is from 8 MPa to 100 MPa. (5) The dicing tape described in any one of (1) to (4) above, wherein the elastic modulus measured by dynamic viscoelastic tensile test is The modulus of elasticity (C) at 100°C is 0.5 MPa or more and 20 MPa or less. (6) The dicing tape described in any one of (1) to (5) above, wherein the substrate layer includes a plurality of layers. (7) The dicing tape described in any one of (1) to (6) above, wherein the substrate layer includes at least three layers, has two non-elastomeric layers formed of a non-elastomeric body, and is arranged on the two non-elastomeric layers. An elastomer layer formed by an elastomer between the elastomer layers. (8) The dicing tape described in any one of (1) to (7) above, wherein the non-elastomeric layer includes polypropylene. (9) The dicing tape described in any one of (1) to (8) above, wherein the elastomer layer includes at least one of ethylene-vinyl acetate copolymer (EVA) or an α-olefin-based thermoplastic elastomer. (10) The dicing tape described in any one of (7) to (9) above, wherein the ratio of the thickness of one layer (X layer) of the non-elastomeric layer to the thickness of the elastomer layer (Y layer) (X layer) /Y layer) is in the range of 0.05 to 0.25. (11) The dicing tape described in any one of (1) to (10) above, wherein the thickness of the substrate layer is 60 μm or more and 160 μm or less. (12) The dicing tape described in any one of (1) to (11) above, wherein the adhesive layer comprises an acrylic polymer, and the acrylic polymer has at least a (meth)acrylic acid alkyl ester in the molecule. Structural unit, structural unit of (meth)acrylate containing hydroxyl group, and structural unit of (meth)acrylate containing polymerizable group. (13) The dicing tape described in (12) above, wherein the adhesive layer further includes an isocyanate compound and a polymerization initiator. (14) The dicing tape described in any one of (1) to (13) above, wherein the ratio of the thickness of the adhesive layer to the total thickness of the dicing tape is 1% or more and 15% or less. (15) A dicing die-cutting film is provided with the die-cutting tape described in any one of (1) to (14) above, and a die-cutting layer laminated on the adhesive layer of the die-cutting tape.

本實施方式之切晶帶、切晶黏晶膜如上述所例示,但本發明並不限定於上述例示之切晶帶、切晶黏晶膜。 即,可於不損及本發明之效果之範圍內採用一般之切晶帶、切晶黏晶膜中使用之各種形態。 [實施例]The dicing tape and the dicing adhesive film of the present embodiment are as exemplified above, but the present invention is not limited to the dicing tape and the dicing adhesive film exemplified above. That is, various forms used in general dicing tape and dicing die bonding film can be adopted within a range that does not impair the effects of the present invention. [Example]

繼而,藉由實驗例更詳細地對本發明進行說明,但本發明並不限定於該等。Next, the present invention will be explained in more detail with experimental examples, but the present invention is not limited to these.

以如下方式製造切晶帶。又,使用該切晶帶製造切晶黏晶膜。The dicing tape is manufactured in the following manner. In addition, the dicing tape is used to produce a dicing die sticking film.

<基材層> ・實施例中為3層構造(X層/Y層/X層),比較例中為單層(Y層) [非彈性體層:X層] 製品名:WXK1233、WMX03 茂金屬系聚丙烯無規共聚物 Japan Polypropylene公司製造 WINTEC系列 [彈性體層:Y層] 製品名:EV250、EV550 乙烯-乙酸乙烯酯共聚樹脂 Dow-Mitsui Polychemicals公司製造 EVAFLEX系列 製品名:Vistamaxx 丙烯系彈性體樹脂 Exxon Mobil Japan公司製造 Vistamaxx系列 ・成形條件 使用擠壓T模成形機製作X層/Y層/X層之3層構造之基材層。詳細而言,自T模進行共擠壓成形而一體化,經擠壓之積層體充分固化後,捲取成卷狀,藉此獲得卷體。再者,擠壓溫度條件如下所述。 X層(外層):190℃ Y層(內層):190℃ 模具溫度:190℃ 再者,各實施例及各比較例中之基材層之厚度如表1所示。<Base layer> ・Three-layer structure (X-layer/Y-layer/X-layer) in the example, single-layer (Y-layer) in the comparative example [Non-elastomeric layer: X layer] Product name: WXK1233, WMX03 Metallocene-based polypropylene random copolymer WINTEC series made by Japan Polypropylene [Elastomer layer: Y layer] Product name: EV250, EV550 Ethylene-vinyl acetate copolymer resin EVAFLEX series manufactured by Dow-Mitsui Polychemicals Product name: Vistamaxx Acrylic elastomer resin Vistamaxx series manufactured by Exxon Mobil Japan ・Forming conditions Use an extrusion T die forming machine to make a base layer with a three-layer structure of X-layer/Y-layer/X-layer. In detail, co-extrusion is performed from a T die to integrate it, and the extruded laminate is fully cured, and then wound into a roll shape to obtain a roll. In addition, the extrusion temperature conditions are as follows. X layer (outer layer): 190℃ Y layer (inner layer): 190℃ Mold temperature: 190℃ Furthermore, the thickness of the substrate layer in each embodiment and each comparative example is shown in Table 1.

<黏著劑層> (丙烯酸系聚合物之合成) 將下述原料加入具備冷凝管、氮氣導入管、溫度計、及攪拌裝置之反應容器,於氮氣氣流中在60℃下進行10小時聚合處理,合成丙烯酸系聚合物中間物。 ・丙烯酸2-乙基己酯(以下亦稱為「2EHA」):100質量份、 ・丙烯酸2-羥基乙酯(以下亦稱為「HEA」):19質量份、 ・過氧化苯甲醯:0.4質量份、 甲苯:80質量份 於合成之丙烯酸系聚合物中間物中加入異氰酸2-甲基丙烯醯氧基乙酯(以下亦稱為「MOI」)1.2質量份,於空氣氣流中在50℃下實施60小時加成反應處理,合成丙烯酸系聚合物。 (黏著劑層之製作) 繼而,以下述組成製備黏著劑溶液。 ・合成之丙烯酸系聚合物:100質量份、 ・多異氰酸酯化合物 (製品名「Coronate L」,Nippon Polyurethane公司製造)                                                       :1.3質量份、 ・光聚合起始劑 (製品名「Irgacure184」、Ciba Specialty Chemicals公司製造)                                                  :3質量份 準備PET系膜作為剝離片材。於剝離片材之面塗佈如上所述般製備之黏著劑溶液。再者,對剝離片材(PET系膜)之單面實施作為脫模處理之聚矽氧處理,於該經實施脫模處理之面塗佈黏著劑溶液。塗佈後,藉由在120℃下加熱2分鐘而實施乾燥處理,於剝離片材上製作厚度10 μm之黏著劑層。<Adhesive layer> (Synthesis of acrylic polymer) The following raw materials were put into a reaction vessel equipped with a condenser tube, a nitrogen introduction tube, a thermometer, and a stirring device, and a polymerization treatment was performed at 60° C. for 10 hours in a nitrogen stream to synthesize an acrylic polymer intermediate. ・2-Ethylhexyl acrylate (hereinafter also referred to as "2EHA"): 100 parts by mass, ・2-Hydroxyethyl acrylate (hereinafter also referred to as "HEA"): 19 parts by mass, ・Benzyl peroxide: 0.4 parts by mass, Toluene: 80 parts by mass Add 1.2 parts by mass of 2-methacryloxyethyl isocyanate (hereinafter also referred to as "MOI") to the synthetic acrylic polymer intermediate, and perform the addition at 50°C for 60 hours in an air stream Reaction treatment, synthesis of acrylic polymer. (Making of Adhesive Layer) Then, an adhesive solution was prepared with the following composition. ・Synthetic acrylic polymer: 100 parts by mass, ・Polyisocyanate compound (Product name "Coronate L", manufactured by Nippon Polyurethane): 1.3 quality copies, ・Photopolymerization initiator (Product name "Irgacure184", manufactured by Ciba Specialty Chemicals): 3 mass copies Prepare a PET-based film as a release sheet. Coat the surface of the release sheet with the adhesive solution prepared as described above. Furthermore, one side of the release sheet (PET-based film) was subjected to polysiloxane treatment as a release treatment, and an adhesive solution was applied to the side subjected to the release treatment. After coating, drying was performed by heating at 120°C for 2 minutes to form an adhesive layer with a thickness of 10 μm on the release sheet.

<切晶帶之製作> 將於剝離片材上製作之黏著劑層之露出面與各基材層貼合,於23℃下保存72小時,製作切晶帶。<Production of crystal cut ribbon> The exposed surface of the adhesive layer made on the release sheet is attached to each substrate layer, and stored at 23° C. for 72 hours to produce a dicing tape.

<黏晶層之製作> 使下述(a)~(e)溶解於甲基乙基酮,製備固形物成分濃度20質量%之樹脂組合物。 (a)丙烯酸樹脂(製品名「SG-P3」長瀨化成公司製造 玻璃轉移溫度12℃):100質量份 (b)環氧樹脂(製品名「JER1001」三菱化學公司製造):46質量份 (c)酚樹脂(製品名「MEH-7851ss」明和化成公司製造):51質量份 (d)球狀氧化矽(製品名「SO-25R」Admatechs公司製造):191質量份 (e)硬化觸媒(製品名「Curezol 2PHZ」四國化成工業公司製造):0.6質量份 將樹脂組合物塗佈於經聚矽氧脫模處理之厚度50 μm之包含聚對苯二甲酸乙二酯膜之脫模處理膜(剝離片材)上。其後,於130℃下實施2分鐘乾燥處理。藉此,製作厚度(平均厚度)10 μm之黏晶層。<Production of sticky layer> The following (a) to (e) were dissolved in methyl ethyl ketone to prepare a resin composition having a solid content concentration of 20% by mass. (a) Acrylic resin (product name "SG-P3" manufactured by Nagase Kasei Co., Ltd. Glass transition temperature 12°C): 100 parts by mass (b) Epoxy resin (product name "JER1001" manufactured by Mitsubishi Chemical Corporation): 46 parts by mass (c) Phenolic resin (product name "MEH-7851ss" manufactured by Meiwa Chemical Co., Ltd.): 51 parts by mass (d) Spherical silica (product name "SO-25R" manufactured by Admatechs): 191 parts by mass (e) Hardening catalyst (product name "Curezol 2PHZ" manufactured by Shikoku Chemical Co., Ltd.): 0.6 parts by mass The resin composition was coated on a release treatment film (release sheet) containing a polyethylene terephthalate film with a thickness of 50 μm after a silicone release treatment. Thereafter, a drying treatment was performed at 130°C for 2 minutes. In this way, a bonding layer with a thickness (average thickness) of 10 μm was produced.

<切晶黏晶膜之製作> 自製作之切晶帶剝離PET剝離片材,於露出之黏著劑層貼合黏晶層。於貼合時使用手壓輥。繼而,自切晶帶側照射300 mJ/cm2 之紫外線(累計光量)。藉此,製造切晶黏晶膜。<Production of chip chip adhesive film> The PET peeling sheet is peeled from the chip chip tape produced, and the chip adhesive layer is attached to the exposed adhesive layer. Use hand rollers when bonding. Then, 300 mJ/cm 2 of ultraviolet rays (cumulative light intensity) were irradiated from the side of the dicing belt. In this way, a diced chip adhesive film is manufactured.

(實施例1~6) 製作表1所示之構成之基材層,按照上述方法分別製造切晶帶及切晶黏晶膜。(Examples 1~6) The substrate layer of the composition shown in Table 1 was produced, and the dicing tape and the dicing die sticking film were respectively manufactured according to the above method.

(比較例1~4) 製作表1所示之構成之基材層,以與實施例相同之方式製造切晶帶及切晶黏晶膜。(Comparative Examples 1 to 4) The base material layer of the composition shown in Table 1 was produced, and the dicing tape and the dicing die sticking film were manufactured in the same manner as in the examples.

將用以製造實施例及比較例之切晶帶及切晶黏晶膜之基材層之構成示於表1。 又,將藉由下述方法測定之各切晶帶之物性(永久變形率等)示於表1。Table 1 shows the composition of the substrate layer used to manufacture the dicing tape and the dicing chip adhesive film of the embodiment and the comparative example. In addition, the physical properties (permanent deformation rate, etc.) of each diced tape measured by the following method are shown in Table 1.

[表1] 實施例 比較例 1 2 3 4 5 6 1 2 3 4 基材層構造 (厚度比) 3層(1/10/1) 3層(1/10/1) 3層(1/10/1) 3層(1/10/1) 3層 (1/4/1) 3層(1/10/1) 單層 單層 單層 單層 基材層材質 WXK1233/ EV250/ WXK1233 WXK1233/ EV250/ WXK1233 WXK1233/ EV550/ WXK1233 WXK1233/ Vistamaxx/ WXK1233 WXK1233/ EV250/ WXK1233 WMX03/ EV250/ WMX03 EV250 EV250 Vistamaxx Vistamaxx 基材層厚度 (μm) 100 80 80 100 80 100 80 100 80 100 永久變形率 23℃ (延伸100%) 46.5 46.5 46.9 38.6 53.6 41.0 11.8 11.8 33.4 33.4 永久變形率 -5℃ (延伸120%) 57.2 35.2 46.9 48.9 65.4 38.0 24.0 24.0 32.5 32.5 60℃彈性模數B (MPa) 33 14 44 27 46 15 2 2 5 5 100℃彈性模數 C (MPa) 6 2 8 2 6 1 0.1以下 0.1以下 0.1 0.1 23℃彈性模數A (MPa) 133 67 170 122 209 64 19 19 31 31 彈性模數之比 (B/A) 0.25 0.20 0.26 0.22 0.22 0.23 0.09 0.09 0.16 0.16 評估結果 (切口30 μm以上○) × × × × [Table 1] Example Comparative example 1 2 3 4 5 6 1 2 3 4 Substrate layer structure (thickness ratio) 3 floors (1/10/1) 3 floors (1/10/1) 3 floors (1/10/1) 3 floors (1/10/1) 3 layers (1/4/1) 3 floors (1/10/1) Single layer Single layer Single layer Single layer Substrate layer material WXK1233/ EV250/ WXK1233 WXK1233/ EV250/ WXK1233 WXK1233/ EV550/ WXK1233 WXK1233/ Vistamaxx/ WXK1233 WXK1233/ EV250/ WXK1233 WMX03/ EV250/ WMX03 EV250 EV250 Vistamaxx Vistamaxx Substrate layer thickness (μm) 100 80 80 100 80 100 80 100 80 100 Permanent deformation rate 23℃ (extension 100%) 46.5 46.5 46.9 38.6 53.6 41.0 11.8 11.8 33.4 33.4 Permanent deformation rate -5℃ (extension 120%) 57.2 35.2 46.9 48.9 65.4 38.0 24.0 24.0 32.5 32.5 60℃ Elastic modulus B (MPa) 33 14 44 27 46 15 2 2 5 5 100℃ Elastic modulus C (MPa) 6 2 8 2 6 1 0.1 or less 0.1 or less 0.1 0.1 Modulus of elasticity at 23℃ A (MPa) 133 67 170 122 209 64 19 19 31 31 Ratio of elastic modulus (B/A) 0.25 0.20 0.26 0.22 0.22 0.23 0.09 0.09 0.16 0.16 Evaluation result (incision 30 μm or more ○) X X X X

<切晶帶之永久變形率之測定> 將如上所述般製造之各切晶帶分別切斷成寬度10 mm,製作試樣。繼而,針對該試樣,如下所述般測定永久變形率。詳細而言,使用拉伸試驗機(製品名「Tensilon」,島津製作所公司製造),於初始夾頭間距離50 mm、拉伸速度100 mm/分鐘之條件下實施試驗。再者,於本測定中沿MD方向進行拉伸,但並不限定於此。然後,於室溫(23℃)下延伸100%(延伸至延伸前長度之2倍長度)時、或於-5℃下延伸120%時,保持1分鐘。其後,以100 mm/分鐘之速度減小拉伸力,測定張力成為0時之夾頭間距離L,將L相對於初始夾頭間距離之比率之百分率設為永久變形率。用以求出永久變形率之測定概念圖如圖7所示。<Determination of permanent deformation rate of cut crystal belt> Each dicing tape manufactured as described above was cut into a width of 10 mm to prepare a sample. Then, with respect to this sample, the permanent deformation rate was measured as follows. Specifically, using a tensile tester (product name "Tensilon", manufactured by Shimadzu Corporation), the test was conducted under the conditions of an initial distance between the chucks of 50 mm and a tensile speed of 100 mm/min. In addition, the stretching was performed in the MD direction in this measurement, but it is not limited to this. Then, when it is stretched 100% at room temperature (23°C) (extended to twice the length before stretching), or when it is stretched 120% at -5°C, hold for 1 minute. Thereafter, the tensile force was reduced at a speed of 100 mm/min, the distance L between the chucks when the tension became 0 was measured, and the percentage of the ratio of L to the distance between the initial chucks was set as the permanent deformation rate. The conceptual diagram of the measurement used to obtain the permanent deformation rate is shown in Figure 7.

<切晶帶之彈性模數(拉伸儲存彈性模數)之測定> 將如上所述般製造之各切晶帶重疊至厚度成為200 μm。繼而,以成為長度40 mm(測定長度)、寬度10 mm之短條狀之方式藉由截切刀進行切取。繼而,使用固體黏彈性測定裝置(製品名「RSAIII」,Rheometric Scientific公司製造),測定-50~100℃下之拉伸儲存彈性模數。測定條件設為頻率1 Hz、升溫速度10℃/分鐘、夾頭間距離22.5 mm。讀取23℃、及60℃下之值,將讀取之值設為拉伸儲存彈性模數之測定值。採用實施1次所得之測定值作為彈性模數。<Determination of the elastic modulus of the crystal-cut tape (the elastic modulus of stretched storage)> The dicing tapes manufactured as described above were superimposed until the thickness became 200 μm. Then, cut it out with a cutting knife so that it becomes a short strip with a length of 40 mm (measurement length) and a width of 10 mm. Then, using a solid viscoelasticity measuring device (product name "RSAIII", manufactured by Rheometric Scientific), the tensile storage elastic modulus at -50 to 100°C was measured. The measurement conditions were set to a frequency of 1 Hz, a heating rate of 10°C/min, and a distance between the chucks of 22.5 mm. Read the values at 23°C and 60°C, and set the read value as the measured value of the tensile storage elastic modulus. The measured value obtained from the first implementation is used as the elastic modulus.

<切晶黏晶膜之使用性能評估> 於實際製造半導體積體電路時,大多是於已在晶圓上形成電路之狀態(形成有電路層之狀態)下切斷晶圓。若形成空間較多之電路層,則容易產生內部應力,而於晶圓整體產生某種程度之翹曲。為了於此種狀況下評估使用性能,於晶圓設置可產生翹曲之翹曲調整層(硬化層)。於晶圓之單面側設置翹曲調整層以使晶圓容易產生翹曲,於此基礎上,如下所述般實施使用性能評估。 (翹曲調整層之組成) 使下述(a)~(f)溶解於甲基乙基酮,製備固形物成分濃度20質量%之翹曲調整層用組合物。 (a)丙烯酸樹脂(商品名「SG-70L」長瀨化成公司製造):5質量份 (b)環氧樹脂(商品名「JER828」三菱化學公司製造):5質量份 (c)酚樹脂(商品名「LDR8210」明和化成公司製造):14質量份 (d)環氧樹脂(商品名「MEH-8005」三菱化學公司製造):2質量份 (e)球狀氧化矽(商品名「SO-25R」Admatechs股份有限公司製造):53質量份 (f)磷矽觸媒(TPP-K):1質量份 將上述組合物塗佈於經聚矽氧脫模處理之厚度50 μm之包含聚對苯二甲酸乙二酯膜之脫模處理膜(剝離襯墊)上後,於130℃下實施2分鐘乾燥處理。藉此,製作厚度(平均厚度)25 μm之翹曲調整層。 (評估用晶圓之製作) 將如上所述般製作之翹曲調整層與晶圓(無電路層之裸晶圓)貼合,卸除脫模處理膜。再者,貼合時之條件設為60℃、0.1 MPa、10 mm/s。其後,於烘箱內以175℃加熱1小時,使翹曲調整層熱硬化。 繼而,於晶圓露出面貼合晶圓加工用帶,固定於切晶環,於翹曲調整層側之面形成溝槽(半切加工)。具體而言,使用切晶裝置(DFD6361,DISCO公司製造),呈寬20 μm、4 mm×11 mm之格子狀地形成深度100 μm之溝槽。進而,於翹曲調整層之表面貼合背面研磨帶,剝離晶圓加工用帶。然後,使用DISCO公司製造之背面研磨機DGP8760,以翹曲調整層及晶圓之積層體之總厚度成為55 μm之方式研削背面。 其後,將露出之晶圓之面貼附於黏晶層。詳細而言,將研磨後露出之晶圓之面貼附於固定在切晶環的切晶帶之黏著劑層上積層之黏晶層,剝離背面研磨帶。 (擴張方法) 使用分離擴片機裝置(DDS2300,DISCO公司製造),進行半導體晶圓之切斷及切晶帶之熱縮。 具體而言,首先,藉由冷擴單元,於擴張溫度-15℃、擴張速度200 mm/秒、擴張量12 mm之條件下切斷半導體晶圓及黏晶層。 其後,藉由熱擴單元,於擴張量10 mm、加熱溫度250℃、風量40 L/分鐘、加熱距離20 mm、轉速3°/秒之條件下使切晶帶熱縮(熱收縮)。<Evaluation of the performance of dicing and sticking film> In the actual manufacturing of semiconductor integrated circuits, most of the wafers are cut in the state where the circuit has been formed on the wafer (the state where the circuit layer is formed). If a circuit layer with a lot of space is formed, internal stress is likely to occur, and a certain degree of warpage occurs in the entire wafer. In order to evaluate the performance under such conditions, a warpage adjustment layer (hardened layer) that can produce warpage is provided on the wafer. A warpage adjustment layer is provided on the single side of the wafer to make the wafer prone to warpage. On this basis, the performance evaluation is carried out as described below. (Composition of warpage adjustment layer) The following (a) to (f) were dissolved in methyl ethyl ketone to prepare a composition for a warpage adjustment layer having a solid content concentration of 20% by mass. (a) Acrylic resin (trade name "SG-70L" manufactured by Nagase Kasei Co., Ltd.): 5 parts by mass (b) Epoxy resin (trade name "JER828" manufactured by Mitsubishi Chemical Corporation): 5 parts by mass (c) Phenolic resin (trade name "LDR8210" manufactured by Meiwa Chemical Co., Ltd.): 14 parts by mass (d) Epoxy resin (trade name "MEH-8005" manufactured by Mitsubishi Chemical Corporation): 2 parts by mass (e) Spherical silicon oxide (trade name "SO-25R" manufactured by Admatechs Co., Ltd.): 53 parts by mass (f) Phosphorus silicon catalyst (TPP-K): 1 part by mass After coating the above composition on a mold release treatment film (release liner) containing a polyethylene terephthalate film with a thickness of 50 μm that has undergone a silicone release treatment, it is dried at 130°C for 2 minutes deal with. In this way, a warpage adjustment layer with a thickness (average thickness) of 25 μm was produced. (Production of wafers for evaluation) The warpage adjustment layer produced as described above is attached to the wafer (bare wafer without a circuit layer), and the mold release treatment film is removed. In addition, the conditions at the time of bonding were set to 60°C, 0.1 MPa, and 10 mm/s. After that, it was heated in an oven at 175°C for 1 hour to thermally harden the warpage adjustment layer. Then, the wafer processing tape is attached to the exposed surface of the wafer, fixed to the dicing ring, and grooves are formed on the surface on the side of the warpage adjustment layer (half-cut processing). Specifically, a dicing device (DFD6361, manufactured by DISCO) was used to form trenches with a depth of 100 μm in a grid of 20 μm in width and 4 mm×11 mm. Furthermore, a back polishing tape was attached to the surface of the warpage adjustment layer, and the tape for wafer processing was peeled off. Then, the back surface grinder DGP8760 manufactured by DISCO was used to grind the back surface so that the total thickness of the warpage adjustment layer and the laminated body of the wafer became 55 μm. After that, the exposed surface of the wafer is attached to the die bonding layer. In detail, the surface of the wafer exposed after grinding is attached to the laminated die-bonding layer on the adhesive layer of the die-cutting tape fixed on the die-cutting ring, and the back polishing tape is peeled off. (Expansion method) Separate and expander device (DDS2300, manufactured by DISCO) is used to cut the semiconductor wafer and heat shrink the dicing tape. Specifically, first, with the cold expansion unit, the semiconductor wafer and the die-bonding layer are cut under the conditions of an expansion temperature of -15°C, an expansion speed of 200 mm/sec, and an expansion amount of 12 mm. After that, with the thermal expansion unit, the dicing tape was heat-shrinked (heat-shrinked) under the conditions of expansion amount of 10 mm, heating temperature of 250°C, air volume of 40 L/min, heating distance of 20 mm, and rotation speed of 3°/sec.

(切口評估) 使用數位顯微鏡(VHX-6000,基恩士公司製造)進行切口之測定。測定係於加熱擴張結束後,藉由數位顯微鏡觀察切斷之部分中之晶片與晶片之間隔(切口),測定間隔長度。於任意選擇之5處,分別測定MD方向及TD方向之切口,採用測定值之最小值。若為30 μm以上之切口,則評估為○,若為未達30 μm之捲曲,則評估為×。再者,任意5處係指圓形晶圓之最外周部分且沿圓周方向相互分離約90度之4處、及晶圓之中央附近。(Incision assessment) A digital microscope (VHX-6000, manufactured by Keyence Corporation) was used for the measurement of the incision. The measurement is performed by observing the gap (notch) between the chip and the chip in the cut part with a digital microscope after the heating and expansion is completed, and measuring the gap length. Measure the cuts in the MD and TD directions at 5 randomly selected locations, and use the smallest value of the measured value. If it is a cut of 30 μm or more, it is evaluated as ○, and if it is a crimp of less than 30 μm, it is evaluated as ×. Furthermore, any 5 locations refer to the 4 locations on the outermost peripheral part of the circular wafer that are separated from each other by about 90 degrees in the circumferential direction, and the vicinity of the center of the wafer.

由上述評估結果可理解,實施例之切晶黏晶膜與比較例之切晶黏晶膜相比,可於擴張後良好地維持切口。From the above evaluation results, it can be understood that the diced chip mucosa of the embodiment can maintain the incision well after expansion compared with the diced chip mucosal film of the comparative example.

於實施例之切晶帶中,於23℃下延伸100%時或於-5℃下延伸120%時之永久變形率為35%以上。 永久變形率成為切晶帶於該溫度下是否容易塑性變形之指標。永久變形率為35%以上表示相對抑制了延伸後因彈性而收縮之情況。因此,認為延伸後幾乎未收縮,相應地,可於擴張後充分地維持切口。In the slicing tape of the embodiment, the permanent deformation rate is 35% or more when it is stretched at 100% at 23°C or when it is stretched at 120% at -5°C. The permanent deformation rate is an indicator of whether the cut crystal strip is easily plastically deformed at this temperature. The permanent deformation rate of 35% or more means that the shrinkage due to elasticity after stretching is relatively suppressed. Therefore, it is considered that there is almost no contraction after the extension, and accordingly, the incision can be sufficiently maintained after the expansion.

於實施例之切晶帶中,例如,60℃下之彈性模數(B)相對於23℃下之彈性模數(A)之比(B/A)為0.17以上。 上述比(B/A)為0.17以上表示與23℃下之彈性相比較,更高溫之60℃下之彈性幾乎未降低。因此,可以說於切晶帶延伸後,即便於60℃下進行加熱(例如僅加熱周緣部之熱收縮),周緣部之彈性亦幾乎未下降。由於周緣部之彈性幾乎未下降,因此可藉由周緣部之彈性抑制延伸之切晶帶欲復原之現象。藉此,認為載置有切斷之晶圓之狀態之切晶帶可於擴張後充分地維持切口。 [產業上之可利用性]In the dicing tape of the embodiment, for example, the ratio (B/A) of the elastic modulus (B) at 60° C. to the elastic modulus (A) at 23° C. is 0.17 or more. The above ratio (B/A) of 0.17 or more means that compared with the elasticity at 23°C, the elasticity at a higher temperature of 60°C hardly decreases. Therefore, it can be said that after the dicing tape is stretched, even if it is heated at 60°C (for example, only the heat shrinkage of the peripheral edge portion is heated), the elasticity of the peripheral edge portion hardly decreases. Since the elasticity of the peripheral edge part is hardly reduced, the elasticity of the peripheral edge part can suppress the phenomenon that the stretched diced tape is trying to recover. As a result, it is considered that the dicing tape in the state where the cut wafer is placed can sufficiently maintain the kerf after expansion. [Industrial availability]

本發明之切晶帶及切晶黏晶膜例如適宜地用作製造半導體積體電路時之輔助用具。The dicing tape and the dicing die sticking film of the present invention can be suitably used as an auxiliary tool when manufacturing semiconductor integrated circuits, for example.

1:切晶黏晶膜 10:黏晶層 20:切晶帶 21:基材層 22:黏著劑層 G:背面研磨帶 H:保持器 J:吸附治具 L:夾頭間距離 P:頂銷構件 R:切晶環 T:晶圓加工用帶 U:頂起構件1: slicing crystal sticking film 10: Sticky crystal layer 20: Cut crystal belt 21: Substrate layer 22: Adhesive layer G: Back grinding tape H: retainer J: Adsorption fixture L: Distance between chucks P: ejector component R: Slicing ring T: Tape for wafer processing U: Jack up member

圖1係將本實施方式之切晶黏晶膜沿厚度方向切斷所得之剖視圖。 圖2A係模式性地表示半導體積體電路之製造方法中之半切加工之情況之剖視圖。 圖2B係模式性地表示半導體積體電路之製造方法中之半切加工之情況之剖視圖。 圖2C係模式性地表示半導體積體電路之製造方法中之半切加工之情況之剖視圖。 圖2D係模式性地表示半導體積體電路之製造方法中之半切加工之情況之剖視圖。 圖3A係模式性地表示半導體積體電路之製造方法中之安裝步驟之情況之剖視圖。 圖3B係模式性地表示半導體積體電路之製造方法中之安裝步驟之情況之剖視圖。 圖4A係模式性地表示半導體積體電路之製造方法中之低溫下之擴張步驟之情況之剖視圖。 圖4B係模式性地表示半導體積體電路之製造方法中之低溫下之擴張步驟之情況之剖視圖。 圖4C係模式性地表示半導體積體電路之製造方法中之低溫下之擴張步驟之情況之剖視圖。 圖5A係模式性地表示半導體積體電路之製造方法中之常溫下之擴張步驟之情況之剖視圖。 圖5B係模式性地表示半導體積體電路之製造方法中之常溫下之擴張步驟之情況之剖視圖。 圖6係模式性地表示半導體積體電路之製造方法中之拾取步驟之情況之剖視圖。 圖7係表示永久變形率之測定概念之模式圖。FIG. 1 is a cross-sectional view obtained by cutting the dicing die sticking film of the present embodiment along the thickness direction. FIG. 2A is a cross-sectional view schematically showing the half-cutting process in the manufacturing method of the semiconductor integrated circuit. FIG. 2B is a cross-sectional view schematically showing the half-cutting process in the manufacturing method of the semiconductor integrated circuit. FIG. 2C is a cross-sectional view schematically showing the half-cut process in the manufacturing method of the semiconductor integrated circuit. FIG. 2D is a cross-sectional view schematically showing the half-cut process in the manufacturing method of the semiconductor integrated circuit. FIG. 3A is a cross-sectional view schematically showing the state of the mounting step in the manufacturing method of the semiconductor integrated circuit. FIG. 3B is a cross-sectional view schematically showing the state of the mounting step in the manufacturing method of the semiconductor integrated circuit. 4A is a cross-sectional view schematically showing the expansion step at a low temperature in the manufacturing method of the semiconductor integrated circuit. 4B is a cross-sectional view schematically showing the expansion step at a low temperature in the manufacturing method of the semiconductor integrated circuit. 4C is a cross-sectional view schematically showing the expansion step at a low temperature in the manufacturing method of the semiconductor integrated circuit. 5A is a cross-sectional view schematically showing the expansion step at room temperature in the method of manufacturing a semiconductor integrated circuit. FIG. 5B is a cross-sectional view schematically showing the expansion step at room temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 6 is a cross-sectional view schematically showing the state of the pickup step in the manufacturing method of the semiconductor integrated circuit. Fig. 7 is a schematic diagram showing the measurement concept of permanent deformation rate.

Claims (6)

一種切晶帶,其係具備基材層、及與該基材層重疊之黏著劑層者,其 於23℃下經延伸時之永久變形率為35%以上。A dicing tape, which is provided with a substrate layer and an adhesive layer overlapped with the substrate layer, and The permanent deformation rate when stretched at 23°C is over 35%. 一種切晶帶,其係具備基材層、及與該基材層重疊之黏著劑層者,其 於-5℃下經延伸時之永久變形率為35%以上。A dicing tape, which is provided with a substrate layer and an adhesive layer overlapped with the substrate layer, and The permanent deformation rate when stretched at -5°C is over 35%. 如請求項1或2之切晶帶,其中關於藉由動態黏彈性拉伸試驗測定之彈性模數, 60℃下之彈性模數(B)相對於23℃下之彈性模數(A)之比(B/A)為0.17以上。Such as claim 1 or 2, regarding the elastic modulus measured by dynamic viscoelastic tensile test, The ratio (B/A) of the elastic modulus (B) at 60°C to the elastic modulus (A) at 23°C is 0.17 or more. 如請求項1或2之切晶帶,其中關於藉由動態黏彈性拉伸試驗測定之彈性模數, 23℃下之彈性模數(A)為40 MPa以上300 MPa以下, 60℃下之彈性模數(B)為8 MPa以上100 MPa以下。Such as claim 1 or 2, regarding the elastic modulus measured by dynamic viscoelastic tensile test, The modulus of elasticity (A) at 23°C is above 40 MPa and below 300 MPa, The modulus of elasticity (B) at 60°C is from 8 MPa to 100 MPa. 如請求項1或2之切晶帶,其中關於藉由動態黏彈性拉伸試驗測定之彈性模數, 100℃下之彈性模數(C)為0.5 MPa以上20 MPa以下。Such as claim 1 or 2, regarding the elastic modulus measured by dynamic viscoelastic tensile test, The modulus of elasticity (C) at 100°C is 0.5 MPa or more and 20 MPa or less. 一種切晶黏晶膜,其具備如請求項1至5中任一項之切晶帶、及積層於該切晶帶之黏著劑層上之黏晶層。A die-cutting die-cutting film is provided with the die-cutting tape according to any one of claims 1 to 5, and a die-cutting layer laminated on the adhesive layer of the die-cutting tape.
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