JP6318750B2 - Adhesive tape for semiconductor wafer processing - Google Patents

Description

  The present invention relates to an adhesive tape for semiconductor wafer processing.

In response to the recent increase in functionality of electronic devices and expansion to mobile applications, there is an increasing demand for higher density and higher integration of semiconductor devices, and IC packages are increasing in capacity and density.

  As a manufacturing method of these semiconductor devices, a semiconductor wafer processing adhesive tape is attached to a semiconductor wafer, and the semiconductor wafer is subjected to a dicing process using a dicing saw while fixing the periphery of the semiconductor wafer with a wafer ring. After being separated into individual semiconductor elements (divided into individual pieces), after the expanding process, the separated semiconductor elements are picked up, and then the semiconductor elements are separated into metal lead frames or substrates (for example, tape substrates, organic substrates). It is transferred to a die bonding process for mounting on a hard substrate or the like. The picked-up semiconductor element is bonded to a lead frame or a substrate through a liquid die attach material in a die bonding process to manufacture a semiconductor device.

  In recent years, various studies have been made on pressure-sensitive adhesive tapes for processing semiconductor wafers used in the manufacture of such semiconductor devices (see, for example, Patent Document 1).

  The semiconductor wafer processing pressure-sensitive adhesive tape generally has a base material (film base material) and an adhesive layer formed on the base material, and the semiconductor wafer is fixed by the adhesive layer. In addition, the adhesive layer is usually composed of a resin composition containing an adhesive base resin and a photo-curable resin so that the semiconductor chip can be easily picked up after the dicing process of the semiconductor wafer. Yes. That is, when energy is applied to the adhesive layer after the dicing step, the resin composition is cured, the adhesiveness of the adhesive layer is lowered, and the semiconductor element can be easily picked up.

  Here, in the cutting of the semiconductor wafer using the dicing saw in the dicing process described above, heat is generated due to friction between the dicing saw and the semiconductor wafer.

  And the frictional heat due to this friction is transmitted to the adhesive tape for semiconductor wafer processing, and due to this, in particular, the resin composition contained in the adhesive layer is vaporized to adhere to the terminals provided in the semiconductor element, As a result, there is a problem of adversely affecting the performance characteristics of the semiconductor device.

  Such a problem is that, in recent years, as the size of a semiconductor wafer increases, the longer the time for which the semiconductor wafer is cut, the longer the time for which the semiconductor wafer processing adhesive tape is heated by frictional heat. For this reason, this is particularly noticeable in a large-sized semiconductor wafer.

  Further, the semiconductor device is usually mounted on a wiring board or the like by electrically connecting a terminal provided in the semiconductor device and a terminal provided in the wiring board through a solder reflow process. In this solder reflow process, the semiconductor device is heated to about 260 ° C. At this time, the resin composition adhering to the semiconductor element included in the semiconductor device is vaporized again, which further adversely affects the performance characteristics of the semiconductor device. There's a problem.

JP 2009-245989 A

  An object of the present invention is to provide a semiconductor wafer processing pressure-sensitive adhesive tape capable of obtaining a semiconductor device having excellent performance characteristics even through a thermal history.

Such an object is achieved by the present invention described in the following (1) to ( 5 ).
(1) An adhesive tape for processing a wafer for a semiconductor comprising a laminate comprising a substrate containing a resin material and an adhesive layer laminated on the substrate,
The adhesive layer contains an adhesive base resin, a curable resin that is cured by application of energy, a crosslinking agent, and a photopolymerization initiator,
The base resin is an acrylic resin,
The curable resin is a polyfunctional urethane acrylate, and the content thereof is 140 parts by weight or more and 200 parts by weight or less with respect to 100 parts by weight of the base resin.
The crosslinking agent is an isocyanate crosslinking agent, and the content thereof is 5 parts by weight or more and 13 parts by weight or less with respect to 100 parts by weight of the base resin.
The content of the photopolymerization initiator is 0.5 to 10 parts by weight with respect to 100 parts by weight of the base resin,
The pressure-sensitive adhesive tape for wafer processing for semiconductors satisfies the following requirements A and B , and the weight reduction rate of the pressure-sensitive adhesive layer when heated to 100 ° C. to 260 ° C. (weight reduction rate B−weight reduction rate A) Slope of -0.12 wt% / min or more, and the slope of weight reduction rate when heated to 100 ° C to 260 ° C is X [wt% / min], weight loss when heated to 100 ° C to 180 ° C A pressure-sensitive adhesive tape for semiconductor wafer processing , wherein X / Y is 1 or more and 2 or less when the rate gradient is Y [wt% / min] .
Requirement A: When the semiconductor wafer processing pressure-sensitive adhesive tape is heated from room temperature 25 ° C. to 100 ° C. in accordance with the thermogravimetric method of plastic specified in JIS K7120 at a temperature rising rate of 5 ° C./min, The weight reduction rate A of the adhesive layer is 0.00001 wt% or more and 2.0 wt% or less.
Requirement B: When the adhesive tape for wafer processing for a semiconductor is heated from room temperature 25 ° C. to 260 ° C. at a rate of temperature increase of 5 ° C./min according to the thermogravimetric method for plastic specified in JIS K7120, The weight reduction rate B of the adhesive layer is 1.0 wt% or more and 10.0 wt% or less.

( 2 ) The adhesive tape for semiconductor wafer processing according to ( 1 ), wherein an endothermic peak in differential thermal analysis is recognized in a temperature region of 260 ° C or higher when heated from room temperature to 380 ° C.

( 3 ) Adhesion for semiconductor wafer processing as described in (1) or (2) above, wherein when heated from room temperature to 260 ° C., an exothermic peak in differential thermal analysis is recognized in a temperature range of 100 ° C. or more and 200 ° C. or less. tape.

( 4 ) The semiconductor wafer processing pressure-sensitive adhesive tape according to any one of (1) to ( 3 ), wherein the resin material is a mixture of polypropylene and an elastomer, or a mixture of polyethylene and an elastomer.

( 5 ) The semiconductor wafer processing adhesive tape according to any one of (1) to ( 4 ), wherein a semiconductor wafer is laminated on the adhesive layer.

  According to the present invention, since the requirement A is satisfied, even if the frictional heat generated when the semiconductor wafer is cut by the dicing saw is transferred to the semiconductor wafer processing adhesive tape, the semiconductor wafer processing adhesive tape is used. Since the vaporization of the constituent components contained in the substrate is accurately prevented or suppressed, it is possible to reliably prevent the performance characteristics of the semiconductor device from being deteriorated due to the adhesion of the constituent components.

  Furthermore, since the requirement B is satisfied, in the solder reflow process for mounting the semiconductor device on the wiring board, even if it is heated to about 260 ° C., it adheres to the semiconductor element included in the semiconductor device. The problem that the constituent components are vaporized again and this adversely affects the performance characteristics of the semiconductor device is also solved.

It is a longitudinal cross-sectional view which shows an example of the semiconductor device using the adhesive tape for wafer processing for semiconductors of this invention. It is a longitudinal cross-sectional view for demonstrating the method to manufacture the semiconductor device shown in FIG. 1 using the adhesive tape for wafer processing for semiconductors of this invention. It is a longitudinal cross-sectional view which shows embodiment of the adhesive tape for wafer processing for semiconductors of this invention. It is a longitudinal cross-sectional view for demonstrating the method to manufacture the adhesive tape for wafer processing for semiconductors shown in FIG.

Hereinafter, the adhesive tape for semiconductor wafer processing of the present invention will be described in detail.
First, prior to describing the adhesive tape for semiconductor wafer processing of the present invention, a semiconductor device manufactured using the adhesive tape for semiconductor wafer processing of the present invention will be described.

<Semiconductor device>
FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured using an adhesive tape for semiconductor wafer processing of the present invention. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

  A semiconductor device 10 illustrated in FIG. 1 is a QFP (Quad Flat Package) type semiconductor package, and includes a semiconductor chip (semiconductor element) 20, a die pad 30 that supports the semiconductor chip 20 via an adhesive layer 60, and the semiconductor chip 20. And leads 40 electrically connected to each other and a mold part (sealing part) 50 for sealing the semiconductor chip 20.

  The die pad 30 is composed of a metal substrate and functions as a support for supporting the semiconductor chip 20.

  The die pad 30 includes, for example, a metal substrate made of various metal materials such as Cu, Fe, Ni, and alloys thereof (for example, Cu-based alloys and iron / nickel-based alloys such as Fe-42Ni), The surface of the metal substrate is plated with silver or Ni—Pd, and the surface of the Ni—Pd plating is provided with a gold plating (gold flash) layer provided to improve the stability of the Pd layer. Are used.

Moreover, the planar view shape of the die pad 30 usually corresponds to the planar view shape of the semiconductor chip 20 and is, for example, a square such as a square or a rectangle.
A plurality of leads 40 are provided radially on the outer periphery of the die pad 30.

  An end portion of the lead 40 opposite to the die pad 30 protrudes (exposes) from the mold portion 50.

  The lead 40 is made of a conductive material, and for example, the same material as that of the die pad 30 described above can be used.

  Further, the lead 40 may be tin-plated on the surface thereof. Thereby, when the semiconductor device 10 is connected to the terminals provided on the mother board via the solder, the adhesion between the solder and the leads 40 can be improved.

  The semiconductor chip 20 is fixed (fixed) to the die pad 30 via the adhesive layer 60.

  Although this adhesive layer 60 is not specifically limited, For example, it forms using various adhesive agents, such as an epoxy-type adhesive agent, an acrylic adhesive agent, a polyimide-type adhesive agent, and a cyanate-type adhesive agent. The adhesive layer 60 may contain metal particles such as silver powder or copper powder. As a result, the thermal conductivity of the adhesive layer 60 is improved, so that heat is efficiently transferred from the semiconductor chip 20 to the die pad 30 via the adhesive layer 60, so that heat dissipation during driving of the semiconductor chip 20 is improved. .

  The semiconductor chip 20 has an electrode pad 21, and the electrode pad 21 and the lead 40 are electrically connected by a wire 22. Thereby, the semiconductor chip 20 and each lead 40 are electrically connected.

  Although the material of this wire 22 is not specifically limited, The wire 22 can be comprised by Au wire or Al wire, for example.

  The die pad 30, each member provided on the upper surface side of the die pad 30, and the inner portion of the lead 40 are sealed by the mold unit 50. As a result, the outer end portion of the lead 40 protrudes from the mold portion 50 made of a cured product of the semiconductor sealing material.

  The semiconductor device 10 having such a configuration is usually used by being mounted on a wiring board. The mounting on the wiring board is performed by electrically connecting a terminal constituted by the tip of the lead 40 and a terminal included in the wiring board through a solder reflow process.

  The semiconductor device 10 as described above is manufactured as follows using the adhesive tape for semiconductor wafer processing of the present invention.

  The semiconductor device having such a configuration is manufactured as follows, for example, using the semiconductor wafer processing adhesive tape of the present invention.

<Method for Manufacturing Semiconductor Device>
FIG. 2 is a longitudinal sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 by using the semiconductor wafer processing adhesive tape of the present invention. In the following description, the upper side in FIG. 2 is referred to as “upper” and the lower side is referred to as “lower”.

[1A] First, a semiconductor wafer processing pressure-sensitive adhesive tape 100 (hereinafter sometimes simply referred to as “pressure-sensitive adhesive tape 100”) having a base material 4 and an adhesive layer 2 laminated on the base material 4 is prepared. (See FIG. 2 (a)).

  Although this adhesive tape 100 is comprised with the adhesive tape for wafer processing for semiconductors of this invention, the detailed description shall be given later.

[2A] Next, as shown in FIG. 2 (b), the adhesive tape 100 is placed on a dicer table (not shown), and the surface of the semiconductor wafer 7 on the side where no semiconductor element is present The semiconductor wafer 7 is laminated by placing on the adhesive layer 2 and pressing lightly.

  Note that the semiconductor wafer 7 may be attached to the adhesive tape 100 in advance and then placed on the dicer table.

  In the present embodiment, a large semiconductor wafer 7 such as 12 inches is laminated on the adhesive tape 100.

[3A] Next, the outer peripheral portion 121 of the adhesive layer 2 is fixed by the wafer ring 9, and then the semiconductor wafer 7 is cut (diced) using a dicing saw (blade) (not shown) to remove the semiconductor wafer 7. It separates into pieces (see FIG. 2C).

  At this time, for the purpose of preventing the dust generated during the cutting of the semiconductor wafer 7 from being scattered and further suppressing the semiconductor wafer 7 from being unnecessarily heated, The semiconductor wafer 7 is cut while supplying the cutting water.

  Further, the adhesive tape 100 has a buffering action, and prevents cracks, chips, etc. when the semiconductor wafer 7 is cut.

  Furthermore, the cutting of the semiconductor wafer 7 using the blade is performed so as to reach the middle of the base material 4 in the thickness direction, as shown in FIG. Thereby, the semiconductor wafer can be surely separated.

[4A] Next, the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 is lowered by applying energy to the adhesive layer 2 included in the adhesive tape 100.
Thereby, it will be in the state which peeling arises between the adhesion layer 2 and the wafer 7 for semiconductors.

  The method of applying energy to the adhesive layer 2 is not particularly limited, and examples thereof include a method of irradiating the adhesive layer 2 with energy rays, a method of heating the adhesive layer 2, and the like. It is preferable to use a method of irradiating a wire from the substrate 4 side of the adhesive tape 100.

  Such a method does not require the semiconductor chip 20 to go through an unnecessary thermal history, and energy can be imparted to the adhesive layer 2 relatively easily and efficiently, so it is preferably used as a method for imparting energy. It is done.

  Examples of energy rays include particle beams such as ultraviolet rays, electron beams, and ion beams, or combinations of two or more of these energy rays. Among these, it is particularly preferable to use ultraviolet rays. According to ultraviolet rays, the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 can be efficiently reduced.

[5A] Next, the adhesive tape 100 is radially expanded by an expanding device (not shown), and the separated semiconductor wafers 7 (semiconductor chips 20) are opened at regular intervals (see FIG. 2D). Thereafter, the semiconductor chip 20 is pushed up using a needle or the like, and in this state, the semiconductor chip 20 is picked up by suction using a vacuum collet or air tweezers (see FIG. 2E).

[6A] Next, the picked-up semiconductor chip 20 is mounted on the die pad 30 via the adhesive layer 60, and then the electrode pad 21 provided in the semiconductor chip 20 and the lead 40 are wire-bonded to form an electric wire 22 Connect.

[7A] Next, the semiconductor chip 20 is sealed with the mold part 50.
For the sealing by the mold part 50, for example, a molding die having an internal space corresponding to the shape of the mold part 50 to be formed is prepared, and powdered so as to surround the semiconductor chip 20 disposed in the internal space. The internal space is filled with a semiconductor sealing material forming In this state, the semiconductor encapsulating material is cured by heating to obtain a cured product of the semiconductor encapsulating material.

  The semiconductor device 10 is obtained by the method for manufacturing a semiconductor device having the steps as described above. Hereinafter, the semiconductor wafer processing pressure-sensitive adhesive tape 100 used in the semiconductor device manufacturing method (the semiconductor wafer processing pressure-sensitive adhesive of the present invention) will be described below. Tape) will be described.

<Semiconductor wafer processing adhesive tape>
FIG. 3 is a longitudinal sectional view showing an embodiment of an adhesive tape for semiconductor wafer processing according to the present invention. In the following description, the upper side in FIG. 3 is referred to as “upper” and the lower side is referred to as “lower”.

  The pressure-sensitive adhesive tape 100 (adhesive tape for semiconductor wafer processing of the present invention) is composed of a laminate including a base material 4 and a pressure-sensitive adhesive layer 2 laminated on the base material 4. Satisfies the following requirements A and B.

Requirement A: Adhesive when the semiconductor wafer processing adhesive tape is heated from room temperature 25 ° C. to 100 ° C. in accordance with the thermogravimetric measurement method of plastic specified in JIS K7120 at a temperature rising rate of 5 ° C./min. The weight reduction rate A of the layer is 0.00001 wt% or more and 2.0 wt% or less.

Requirement B: When the semiconductor wafer processing pressure-sensitive adhesive tape is heated from room temperature 25 ° C. to 260 ° C. in accordance with the thermogravimetric measurement method prescribed in JIS K7120 plastic at a temperature rising rate of 5 ° C./min, the pressure-sensitive adhesive layer The weight reduction rate B is 1.0 wt% or more and 10.0 wt% or less.

  As described above, since the requirement A is satisfied, even if the frictional heat generated when the semiconductor wafer is cut by the dicing saw is transmitted to the adhesive tape 100 in the step [3A], the adhesive included in the adhesive tape 100 is provided. Since the vaporization of the constituent components contained in the layer 2 is accurately prevented or suppressed, it is possible to reliably prevent the performance characteristics of the semiconductor device 10 from being deteriorated due to the adhesion of the constituent components.

  Furthermore, since the requirement B is satisfied, even if the semiconductor device 10 is heated to about 260 ° C. in the solder reflow process for mounting the semiconductor device 10 on the wiring substrate, the semiconductor device 10 includes the semiconductor device 10. The problem that the constituent components adhering to the chip 20 are vaporized again and this adversely affects the performance characteristics of the semiconductor device is also solved.

  Hereinafter, the substrate 4 and the adhesive layer 2 included in the adhesive tape (dicing tape) 100 will be described in detail.

  In addition, the adhesive tape 100 has a function which the adhesiveness with respect to the semiconductor wafer 7 of the adhesion layer 2 falls by giving energy to the adhesion layer 2 with which this thing is provided.

  Examples of a method for applying energy to the adhesive layer 2 include a method of irradiating the adhesive layer 2 with energy rays and a method of heating the adhesive layer 2. Among them, the semiconductor chip 20 has an unnecessary heat history. Since it is not necessary to pass through, the method of irradiating the adhesive layer 2 with energy rays is preferably used. Therefore, below, the adhesive layer 2 will be described as a representative one in which the adhesiveness is reduced by irradiation with energy rays.

<Substrate 4>
The base material 4 is mainly made of a resin material and has a function of supporting the adhesive layer 2 provided on the base material 4.

  The resin material is not particularly limited, and for example, polyethylene such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, and ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolymer. Polypropylene such as polyprolene, polyolefin resin such as polyvinyl chloride, polybutene, polybutadiene, polymethylpentene, etc., ethylene-vinyl acetate copolymer, zinc ion cross-linked product, ionomer such as sodium ion cross-linked product, ethylene- ( Olefin-based copolymers such as (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-propylene copolymer, ethylene-butene copolymer, ethylene-hexene copolymer Polymer, polyethylene Polyester resins such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polybutylene naphthalate, polyether ketones such as polyurethane, polyimide, polyamide, polyether ether ketone, polyether sulfone, polystyrene, fluororesin, silicone resin, Cellulose resins, styrene thermoplastic elastomers, olefinic thermoplastic elastomers such as polypropylene thermoplastic elastomers, thermoplastic resins such as acrylic resins, polyester thermoplastic elastomers, polyvinyl isoprene, polycarbonate, and the like of these thermoplastic resins A mixture is used.

  Since these resin materials are materials that can transmit energy rays such as light (visible light, near infrared rays, ultraviolet rays), X-rays, and electron beams, in the step [4A], the energy rays are transferred to the substrate 4 side. Can be preferably used in the case of irradiating the adhesive layer 2 through the substrate 4.

  In particular, as the resin material, it is preferable to use a mixture of polypropylene and an elastomer or a mixture of polyethylene and an elastomer.

  Moreover, as this elastomer, the block copolymer which consists of a polystyrene segment shown by the following general formula (1) and a vinyl polyisoprene segment shown by the following general formula (2) is preferable.

（一般式（１）中、ｎは２以上の整数を表す。）

(In general formula (1), n represents an integer of 2 or more.)

（一般式（２）中、ｎは２以上の整数を表す。）

(In general formula (2), n represents an integer of 2 or more.)

  In addition, the base material 4 includes a softener such as mineral oil, a filler such as calcium carbonate, silica, talc, mica, and clay, an antioxidant, a light stabilizer, an antistatic agent, a lubricant, a dispersant, and a neutralizing agent. Further, it may contain a colorant or the like.

  Although the thickness of the base material 4 is not specifically limited, For example, it is preferable that they are 10 micrometers or more and 300 micrometers or less, It is more preferable that they are 30 micrometers or more and 200 micrometers or less, It is more preferable that they are 80 micrometers or more and 200 micrometers or less. When the thickness of the substrate 4 is within this range, the dicing of the semiconductor wafer 7 in the step [3A] can be performed with excellent workability.

  Furthermore, it is preferable that the functional group such as a hydroxyl group or an amino group that is reactive with the constituent material contained in the adhesive layer 2 is exposed on the surface of the substrate 4.

  Moreover, the base material 4 may be comprised by the laminated body (multilayer body) which laminated | stacked two or more layers comprised with the said different resin material. Further, it may be composed of a blend film obtained by dry blending the resin material.

  In addition, when comprising the base material 4 with a laminated body, what consists of an odd-numbered layer by which the odd-numbered layer was laminated | stacked is preferable. Furthermore, in the case of an odd-numbered layer, a control structure in which the same layer consisting of the same constituent material, the content of the constituent material, etc. is laminated on both sides as a control, with the layer located in the center as the center. preferable. Thereby, in the said process [4A], when making an energy ray permeate | transmit the base material 4 from the base material 4 side, since the transmittance | permeability of the energy ray in the base material 4 can be improved, energy is supplied to the adhesion layer 2. The line can be irradiated with high efficiency.

<Adhesive layer>
The adhesive layer 2 has a function of adhering and supporting the semiconductor wafer 7 when dicing the semiconductor wafer 7 in the step [3A]. In addition, the adhesive layer 2 has a state in which the adhesiveness to the semiconductor wafer 7 is reduced by applying energy to the adhesive layer 2, and thus, the adhesive layer 2 and the semiconductor wafer 7 can be easily peeled off. It will be.

  The pressure-sensitive adhesive layer 2 having such a function is composed of a resin composition containing, as main materials, (1) an adhesive base resin and (2) a curable resin for curing the pressure-sensitive adhesive layer 2.

Hereinafter, each component contained in the resin composition will be described in detail.
(1) Base resin The base resin has adhesiveness, and is included in the resin composition in order to impart adhesiveness to the semiconductor wafer 7 to the adhesive layer 2 before the adhesive layer 2 is irradiated with energy rays. It is what

  Such base resins include acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), and polyvinyl ether resins (adhesives). Or well-known thing used as adhesion layer components like urethane type resin (adhesive) is mentioned, but it is preferred to use acrylic resin especially. Acrylic resins are preferably used as base resins because they are excellent in heat resistance and are relatively easy and inexpensive to obtain.

  The acrylic resin refers to a polymer having a (meth) acrylic acid ester as a main monomer component (homopolymer or copolymer) as a base polymer.

  Although it does not specifically limit as (meth) acrylic acid ester, For example, (meth) acrylic acid methyl, (meth) acrylic acid ethyl, (meth) acrylic acid propyl, (meth) acrylic acid isopropyl, (meth) acrylic acid butyl , Isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, (meth) Octyl acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, (meth ) Undecyl acrylate, dodecyl (meth) acrylate, tri (meth) acrylate (Meth) acrylic acid alkyl esters such as syl, (meth) acrylic acid tetradecyl, (meth) acrylic acid pentadecyl, (meth) acrylic acid hexadecyl, (meth) acrylic acid heptadecyl, (meth) acrylic acid octadecyl, (meth) Examples include (meth) acrylic acid cycloalkyl esters such as cyclohexyl acrylate, (meth) acrylic acid aryl esters such as phenyl (meth) acrylate, and one or more of these are used in combination. be able to. Among these, (meth) acrylic acid alkyl esters such as methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and octyl (meth) acrylate It is preferable that The (meth) acrylic acid alkyl ester is particularly excellent in heat resistance, and can be obtained relatively easily and inexpensively.

  In the present specification, the term “(meth) acrylic acid ester” is used to mean including both an acrylic acid ester and a methacrylic acid ester.

  The acrylic resin preferably has a glass transition point of 20 ° C. or lower. Thereby, the adhesiveness excellent in the adhesive layer 2 can be exhibited before the energy layer is irradiated to the adhesive layer 2.

  As the acrylic resin, a resin containing a copolymerizable monomer is used as a monomer component constituting the polymer, if necessary, for the purpose of modifying cohesive force, heat resistance and the like.

  Such a copolymerizable monomer is not particularly limited. For example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, (meth) Hydroxyl group-containing monomers such as 6-hydroxyhexyl acrylate, epoxy group-containing monomers such as glycidyl (meth) acrylate, (meth) acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid Carboxyl group-containing monomers, maleic anhydride, acid anhydride group-containing monomers such as itaconic anhydride, (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol ( (Meth) acrylamide, N-methylolpropane (meth) Amyl monomers such as chloramide, N-methoxymethyl (meth) acrylamide, N-butoxymethyl (meth) acrylamide, aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, (meth) Amino group-containing monomers such as t-butylaminoethyl acrylate, cyano group-containing monomers such as (meth) acrylonitrile, olefinic monomers such as ethylene, propylene, isoprene, butadiene and isobutylene, styrene, α-methylstyrene, Styrene monomers such as vinyl toluene, vinyl ester monomers such as vinyl acetate and vinyl propionate, vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether, halogens such as vinyl chloride and vinylidene chloride Atom-containing monomer, alkoxy group-containing monomer such as methoxyethyl (meth) acrylate, ethoxyethyl (meth) acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N- (meth) acryloylmorpholine, etc. Examples include monomers having a nitrogen atom-containing ring, and one or more of these can be used in combination.

  The content of these copolymerizable monomers is preferably 40% by weight or less, and more preferably 10% by weight or less, based on all monomer components constituting the acrylic resin.

  Further, the copolymerizable monomer may be contained at the end of the main chain in the polymer constituting the acrylic resin, or may be contained in the main chain, and further, the end of the main chain and the main chain It may be included in both the inside and the inside.

  Further, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of crosslinking between polymers.

  Examples of the multifunctional monomer include 1,6-hexanediol (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, and neopentyl glycol di (meth) acrylate. , Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, glycerin di (meth) acrylate, epoxy (meth) acrylate, polyester ( And (meth) acrylate, urethane (meth) acrylate, divinylbenzene, butyl di (meth) acrylate, hexyl di (meth) acrylate, and the like. It can be used in combination.

  In addition, ethylene-vinyl acetate copolymer and vinyl acetate polymer can also be used as copolymerizable monomer components.

  Such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. In addition, the polymerization of these monomer components can be carried out using a polymerization method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, a suspension polymerization method, or the like.

  As described above, the acrylic resin obtained by polymerizing the monomer components described above includes an acrylic resin having a carbon-carbon double bond in the side chain, main chain or terminal of the main chain (“double” It is sometimes referred to as “bond-introducing acrylic resin”. When the acrylic resin is a double bond-introducing acrylic resin, even if the addition of the curable resin described later is omitted, the obtained adhesive layer 2 is allowed to exhibit the function as the adhesive layer 2 described above. Can do.

  Such a double bond-introducing acrylic resin has one carbon-carbon double bond in each of the side chains of 1/100 or more of the side chains in the polymer constituting the acrylic resin. It is preferably a double bond-introducing acrylic resin (sometimes referred to as “double-bond side chain-introducing acrylic resin”). Thus, introducing a carbon-carbon double bond into the side chain of an acrylic resin is advantageous from the viewpoint of molecular design. In addition, this double bond side chain introduction type acrylic resin may have a carbon-carbon double bond in the main chain or at the end of the main chain.

  The method for synthesizing such a double bond-introducing acrylic resin (that is, a method for introducing a carbon-carbon double bond into the acrylic resin) is not particularly limited. For example, a functional group is used as a copolymerizable monomer. After synthesizing an acrylic resin containing a functional group (also referred to as a “functional group-containing acrylic resin”) by copolymerization using a monomer having the functional group in the functional group-containing acrylic resin, A compound having a functional group capable of reacting and a carbon-carbon double bond (sometimes referred to as a “carbon-carbon double bond-containing reactive compound”) is added to a functional group-containing acrylic resin as carbon-carbon. Examples include a method of synthesizing a double bond-introducing acrylic resin by performing a condensation reaction or an addition reaction in a state where the energy bond curability (energy beam polymerizability) of the double bond is maintained.

  In addition, as a control means when introducing a carbon-carbon double bond into an acrylic resin into 1/100 or more of all side chains, for example, a condensation reaction or addition to a functional group-containing acrylic resin The method etc. which are performed by adjusting suitably content of the carbon-carbon double bond containing reactive compound which is a compound made to react are mentioned.

  Moreover, when carrying out the condensation reaction or addition reaction of a carbon-carbon double bond containing reactive compound with a functional group containing acrylic resin, the said reaction can be effectively advanced by using a catalyst. Such a catalyst is not particularly limited, but a tin-based catalyst such as dibutyltin dilaurate is preferably used. The content of the tin-based catalyst is not particularly limited, but for example, it is preferably 0.05 parts by weight or more and 1 part by weight or less with respect to 100 parts by weight of the functional group-containing acrylic resin.

  Examples of the functional group A in the functional group-containing acrylic resin and the functional group B in the carbon-carbon double bond-containing reactive compound include a carboxyl group, an acid anhydride group, a hydroxyl group, an amino group, an epoxy group, and an isocyanate. Examples of the combination of the functional group A in the functional group-containing acrylic resin and the functional group B in the carbon-carbon double bond-containing reactive compound include, for example, a carboxylic acid group (carboxyl group). Group) and an epoxy group, a combination of a carboxylic acid group and an aziridyl group, a combination of a hydroxyl group and an isocyanate group, and a combination of a hydroxyl group and a carboxyl group. Preferred is a combination of a group and an isocyanate group There. Thereby, the reaction tracking between these functional groups A and B can be easily performed.

  Further, in the combination of these functional groups A and B, any functional group may be the functional group A of the functional group-containing acrylic resin or the functional group B of the carbon-carbon double bond-containing reactive compound. For example, in the case of a combination of a hydroxyl group and an isocyanate group, the hydroxyl group is the functional group A in the functional group-containing acrylic resin, and the isocyanate group is a functional group in the carbon-carbon double bond-containing reactive compound. The group B is preferred.

  In this case, examples of the monomer having the functional group A constituting the functional group-containing acrylic resin include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Having a carboxylic group, maleic anhydride, having an acid anhydride group such as itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth) acrylic acid 4-hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethyl (Cyclohexyl) methyl (meth) acryl Hydroxyl groups like vinyl alcohol, allyl alcohol, 2-hydroxyethyl vinyl ether, 2-hydroxypropyl vinyl ether, 4-hydroxybutyl vinyl ether, ethylene glycol monovinyl ether, diethylene glycol monovinyl ether, propylene glycol monovinyl ether, dipropylene glycol monovinyl ether And those having an epoxy group such as glycidyl (meth) acrylate and allyl glycidyl ether.

  Moreover, as a carbon-carbon double bond containing reactive compound which has a functional group B, what has an isocyanate group, for example, (meth) acryloyl isocyanate, (meth) acryloyloxymethyl isocyanate, 2- (meth) acryloyloxy Examples include ethyl isocyanate, 2- (meth) acryloyloxypropyl isocyanate, 3- (meth) acryloyloxypropyl isocyanate, 4- (meth) acryloyloxybutyl isocyanate, m-propenyl-α, α-dimethylbenzyl isocyanate, and epoxy. Examples of the group having a group include glycidyl (meth) acrylate.

  From the viewpoint of preventing contamination of the semiconductor wafer 7 and the like when the semiconductor wafer 7 is diced in the step [3A], the acrylic resin is preferably one having a low content of low molecular weight substances. . In this case, the weight average molecular weight of the acrylic resin is preferably set to 300,000 to 5,000,000, more preferably set to 500,000 to 5,000,000, and further preferably set to 800,000 to 3,000,000. If the weight average molecular weight of the acrylic resin is less than 500,000 depending on the type of monomer component, etc., the anti-contamination property to the semiconductor wafer 7 and the like will be reduced, and the adhesive residue will remain when the semiconductor chip 20 is peeled off. May occur.

  The acrylic resin has a functional group (reactive functional group) having reactivity with a crosslinking agent or photopolymerization initiator, such as a hydroxyl group or a carboxyl group (particularly, a hydroxyl group). Is preferred. Thereby, since a crosslinking agent and a photoinitiator connect with the acrylic resin which is a polymer component, it can suppress or prevent that these crosslinking agents and a photoinitiator leak from the adhesion layer 2 exactly. As a result, the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 is reliably lowered by the energy beam irradiation in the step [4A].

(2) Curable resin A curable resin is provided with the curability hardened | cured by irradiation of an energy ray, for example. As a result of this curing, the base resin is taken into the crosslinked structure of the curable resin, and as a result, the adhesive strength of the adhesive layer 2 is reduced.

  As such a curable resin, for example, a low molecular weight having at least two polymerizable carbon-carbon double bonds which can be three-dimensionally cross-linked by irradiation with energy rays such as ultraviolet rays and electron beams as functional groups. A compound is used. Specifically, for example, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, tetraethylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, 1,4-butylene glycol di (meth) ) Esterified products of (meth) acrylic acid and polyhydric alcohols such as acrylate, polyethylene glycol di (meth) acrylate, glycerin di (meth) acrylate, Cyanurate compounds having carbon-carbon double bond-containing groups such as relate oligomers, 2-propenyl-di-3-butenyl cyanurate, tris (2-acryloxyethyl) isocyanurate, tris (2-methacrylic) Loxyethyl) isocyanurate, 2-hydroxyethyl bis (2-acryloxyethyl) isocyanurate, bis (2-acryloxyethyl) 2-[(5-acryloxyhexyl) -oxy] ethyl isocyanurate, tris (1, 3-Diacryloxy-2-propyl-oxycarbonylamino-n-hexyl) isocyanurate, tris (1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl) isocyanurate, tris (4- Acryloxy-n-butyl) isocyanate Isocyanurate compounds having a carbon-carbon double bond-containing group such as nurate, commercially available oligoester acrylates, aromatic and aliphatic urethane acrylates, etc., and one of these Alternatively, two or more kinds can be used in combination. Among these, it is preferable that an oligomer having 6 or more functional groups is included, and an oligomer having 15 or more functional groups is more preferable. Thereby, curable resin can be hardened more reliably by irradiation of an energy ray. Moreover, it is preferable that such curable resin is urethane acrylate. Thereby, there exists the elongation after expansion after UV (energy ray) hardening, and the effect that paste becomes difficult to break at the time of pick-up is acquired.

  The urethane acrylate is not particularly limited. For example, a polyol compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diene). (Isocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.) having a hydroxyl group in the terminal isocyanate urethane prepolymer obtained by reacting ( Examples thereof include those obtained by reacting (meth) acrylate (for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, polyethylene glycol (meth) acrylate, etc.)).

  Moreover, although it does not specifically limit to curable resin, It is preferable that 2 or more curable resin from which a weight average molecular weight differs is mixed. If such a curable resin is used, the degree of crosslinking of the resin by irradiation with energy rays can be easily controlled, and the pick-up property of the semiconductor chip 20 in the step [5A] can be improved. In addition, as such a curable resin, for example, a mixture of a first curable resin and a second curable resin having a weight average molecular weight larger than that of the first curable resin may be used.

  When making curable resin into a mixture of 1st curable resin and 2nd curable resin, it is preferable that the weight average molecular weights of 1st curable resin are about 100-1000, and 200- More preferably, it is about 500. The weight average molecular weight of the second curable resin is preferably about 1000 to 30000, more preferably about 1000 to 10000, and still more preferably about 2000 to 5000. Further, the number of functional groups of the first curable resin is preferably 1 to 5 functional groups, and the number of functional groups of the second curable resin is preferably 6 functional groups or more. By satisfying such a relationship, the effect can be exhibited more remarkably.

  The curable resin is preferably blended in an amount of 5 parts by weight or more and 500 parts by weight or less, more preferably 10 parts by weight or more and 300 parts by weight or less, and more preferably 20 parts by weight or more. More preferably, it is blended at 200 parts by weight or less. By adjusting the blending amount of the curable resin as described above, the pickup property of the semiconductor chip 20 in the step [5A] can be made excellent.

  In addition, this curable resin is a case where a double bond introduction type acrylic resin is used as the acrylic resin described above, that is, a carbon-carbon double bond is present in the side chain, the main chain, or the end of the main chain. When using what has, you may make it abbreviate | omit the addition to the resin composition. This is because, when the acrylic resin is a double bond-introducing acrylic resin, the adhesive layer 2 is formed by the function of the carbon-carbon double bond of the double bond-introducing acrylic resin by irradiation with energy rays. This is because the adhesive force of the pressure-sensitive adhesive layer 2 is reduced.

(3) Photopolymerization initiator In addition, the adhesive layer 2 is one whose adhesiveness to the semiconductor wafer 7 is reduced by irradiation with energy rays. In order to facilitate the initiation of polymerization of the curable resin, it is preferable to contain a photopolymerization initiator.

  Examples of the photopolymerization initiator include 2,2-dimethoxy-1,2-diphenylethane-1-one, 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1 -Propan-1-one, 2-hydroxy-1- {4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl} -2-methyl-propan-1-one, benzyldiphenyl sulfide, Tetramethylthiuram monosulfide, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1 -Hydroxycyclohexyl phenyl ketone, Michler's ketone, acetophenone, methoxyacetophenone, 2, -Dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholinopropane-1, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether , Benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, dibenzyl, α-hydroxycyclohexyl phenyl ketone, benzyl dimethyl ketal, 2-hydroxymethylphenylpropane, 2-naphthalenesulfonyl chloride, 1-phenone-1,1-propanedione- 2- (o-ethoxycarbonyl) oxime, benzophenone, benzoylbenzoic acid, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone, 4 , 4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acryloxybenzophenone, p-acryloxybenzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p- (meth) acryloxy Benzophenone-4-carboxylic acid esters of acrylates such as ethoxybenzophenone, 1,4-butanediol mono (meth) acrylate, 1,2-ethanediol mono (meth) acrylate, 1,8-octanediol mono (meth) acrylate Thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloranthraquinone, camphorquinone, halogenated ketone, acylphosphinoxide, acylphosphonate, polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone , Diethylthioxanthone, 2-ethylanthraquinone, t-butylanthraquinone, 2,4,5-triallylimidazole dimer, and the like, and one or more of these can be used in combination. .

  Among these, benzophenone derivatives and alkylphenone derivatives are preferable. These compounds have a hydroxyl group as a reactive functional group in the molecule, and can be linked to a base resin or a curable resin via this reactive functional group, and more function as a photopolymerization initiator. It can be demonstrated reliably.

  The photopolymerization initiator is preferably blended in an amount of 0.1 to 50 parts by weight, more preferably 0.5 to 10 parts by weight, based on 100 parts by weight of the base resin. . By adjusting the blending amount of the photopolymerization initiator as described above, the pickup property of the pressure-sensitive adhesive tape 100 becomes suitable.

(4) Crosslinking agent Furthermore, the curable resin may contain a crosslinking agent. Inclusion of the crosslinking agent can improve the curability of the curable resin.

  The crosslinking agent is not particularly limited. For example, an isocyanate crosslinking agent, an epoxy crosslinking agent, a urea resin crosslinking agent, a methylol crosslinking agent, a chelate crosslinking agent, an aziridine crosslinking agent, a melamine crosslinking agent, and a polyvalent crosslinking agent. Examples include metal chelate-based crosslinking agents, acid anhydride-based crosslinking agents, polyamine-based crosslinking agents, and carboxyl group-containing polymer-based crosslinking agents. Among these, an isocyanate type crosslinking agent is preferable.

  Although it does not specifically limit as an isocyanate type crosslinking agent, For example, the trimer of the terminal isocyanate compound obtained by making the polyisocyanate compound of polyvalent isocyanate and the trimer of a polyisocyanate compound, and making a polyisocyanate compound and a polyol compound react. Or the blocked polyisocyanate compound etc. which blocked the terminal isocyanate urethane prepolymer with phenol, oximes, etc. are mentioned.

  Examples of the polyvalent isocyanate include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′-diisocyanate, diphenylmethane. -2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenyl ether diisocyanate, 4 , 4 '-[2,2-bis (4-phenoxyphenyl) propane] diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, and the like. It can be used singly or in combination of two or more of them. Among these, at least one polyisocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate and hexamethylene diisocyanate is preferable.

  The crosslinking agent is preferably blended in an amount of 0.01 to 50 parts by weight, more preferably 5 to 50 parts by weight, based on 100 parts by weight of the base resin. By adjusting the blending amount of the crosslinking agent as described above, the pickup property of the pressure-sensitive adhesive tape 100 becomes suitable.

(5) Other components In addition to the components (1) to (4) described above, the resin composition constituting the adhesive layer 2 includes, as other components, an antistatic agent, a tackifier, and an anti-aging agent. , An adhesion regulator, a filler, a colorant, a flame retardant, a softener, an antioxidant, a plasticizer, a surfactant, and the like may be contained. Hereinafter, among these, the antistatic agent and the tackifier will be described.

(5-1) Antistatic agent Although it does not specifically limit as an antistatic agent, For example, surface activity, such as anionic surfactant, a cationic surfactant, a nonionic surfactant, an amphoteric surfactant, etc. An agent etc. are mentioned, Among these, it can use combining 1 type (s) or 2 or more types.

  Examples of the antistatic agent that does not exhibit temperature dependence include powders such as carbon black, silver, nickel, antimony-doped tin oxide, tin-doped indium oxide, and one or two of these powders. A combination of more than one species can be used.

(5-2) Tackifier The tackifier is not particularly limited. For example, rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic Aromatic copolymer petroleum resins and the like can be mentioned, and one or more of them can be used in combination.

  The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably, for example, 1 μm or more and 30 μm or less, more preferably 5 μm or more and 30 μm or less, and further preferably 10 μm or more and 20 μm or less. By making the thickness of the pressure-sensitive adhesive layer 2 within such a range, the pressure-sensitive adhesive layer 2 exhibits a good adhesive force before applying energy to the pressure-sensitive adhesive layer 2, and after applying energy to the pressure-sensitive adhesive layer 2, Good peelability is exhibited between the adhesive layer 2 and the semiconductor wafer 7.

  In addition, the adhesion layer 2 may be comprised by the laminated body (multilayer body) which laminated | stacked the layer comprised by the said different resin composition two or more.

  In the pressure-sensitive adhesive tape 100 having such a configuration, in the present invention, the pressure-sensitive adhesive tape 100 satisfies the following requirements A and B.

Requirement A: Adhesive when the semiconductor wafer processing adhesive tape is heated from room temperature 25 ° C. to 100 ° C. in accordance with the thermogravimetric measurement method of plastic specified in JIS K7120 at a temperature rising rate of 5 ° C./min. The weight reduction rate A of the layer is 0.00001 wt% or more and 2.0 wt% or less.

Requirement B: When the semiconductor wafer processing pressure-sensitive adhesive tape is heated from room temperature 25 ° C. to 260 ° C. in accordance with the thermogravimetric measurement method prescribed in JIS K7120 plastic at a temperature rising rate of 5 ° C./min, the pressure-sensitive adhesive layer The weight reduction rate B is 1.0 wt% or more and 10.0 wt% or less.

  Here, in the step [3A], when the semiconductor wafer 7 is cut using a dicing saw, it is usually possible to prevent dust generated during the cutting of the semiconductor wafer 7 from being scattered, The semiconductor wafer 7 is cut while supplying cutting water to the semiconductor wafer 7 in order to suppress unnecessary heating of the wafer 7 by frictional heat. As described above, even if the cutting water is supplied, the semiconductor wafer 7 is heated to about 90 ° C. by the frictional heat according to the study of the present inventor. Therefore, the frictional heat is transmitted to the adhesive tape 100. .

  Therefore, as in requirement A, the frictional heat is reduced by setting the weight reduction rate A of the adhesive layer 2 included in the adhesive tape 100 when heated from room temperature to 100 ° C. to 0.00001 wt% or more and 2.0 wt% or less. Even if the pressure-sensitive adhesive tape 100 is heated to about 90 ° C., the vaporization of the constituent components contained in the pressure-sensitive adhesive layer 2 included in the pressure-sensitive adhesive tape 100 is accurately prevented or suppressed. As a result, the deterioration of the performance characteristics of the semiconductor device 10 due to the constituent components adhering to the semiconductor chip 20 is reliably prevented.

  In particular, in this embodiment, a large semiconductor wafer 7 such as 12 inches is laminated on the adhesive tape 100, and the semiconductor wafer 7 is heated by frictional heat for a longer time. By making the adhesive layer 2 included in the adhesive tape 100 satisfy the requirement A, the vaporization of the constituent components contained in the adhesive layer 2 included in the adhesive tape 100 can be accurately performed even in such a large semiconductor wafer 7. Can be prevented or suppressed.

  Further, as described above, the semiconductor device 10 is usually mounted on a wiring board through a solder reflow process. In this solder reflow process, the semiconductor device 10 is heated to about 260 ° C.

  Therefore, as in requirement B, when the weight reduction rate B of the adhesive layer when heated from room temperature to 260 ° C. is 1.0 wt% or more and 10.0 wt% or less, the semiconductor device 10 is 260 in the solder reflow process. Even if heated to about 0 ° C., the component adhering to the semiconductor chip 20 included in the semiconductor device 10 is appropriately prevented or suppressed from vaporizing again. As a result, the deterioration of the performance characteristics of the semiconductor device 10 due to the vaporization of the constituent components in the semiconductor device 10 is reliably prevented.

  Here, the weight reduction rate A of the pressure-sensitive adhesive layer 2 when heated from room temperature to 100 ° C. and the weight reduction rate B of the pressure-sensitive adhesive layer 2 when heated from room temperature to 260 ° C. are respectively 5 ° C. It can obtain | require based on the thermogravimetric measuring method prescribed | regulated to JISK7120 plastic with the temperature increase rate of / min.

  The weight reduction rate A may be 0.00001 wt% or more and 2.0 wt% or less, but is preferably 0.00001% or more and 1.5 wt% or less, preferably 0.00001 wt% or more and 1 wt%. The following is more preferable. Furthermore, the weight reduction rate B may be 1.0 wt% or more and 10.0 wt% or less, but is preferably 1.0 wt% or more and 7.0 wt% or less, and is preferably 1.0 wt% or more and 5. wt% or less. More preferably, it is 0 wt% or less. Thereby, the effects as described above can be more remarkably exhibited.

  Furthermore, the slope X of the weight reduction rate (the weight reduction rate B−the weight reduction rate A) of the adhesive layer 2 when heated to 100 ° C. to 260 ° C. is preferably −0.14 ° C./min or more. It is more preferably −0.12 ° C./min or more and less than 0 ° C./min. Thereby, it can be said that the weight reduction of the adhesion layer 2 is reduced in a temperature range of 100 ° C to 260 ° C. Therefore, even if the semiconductor device 10 is heated to about 260 ° C. in the solder reflow process, the component adhering to the semiconductor chip 20 included in the semiconductor device 10 is more accurately prevented or suppressed from being vaporized again. The As a result, the deterioration of the performance characteristics of the semiconductor device 10 due to the vaporization of the constituent components in the semiconductor device 10 is more reliably prevented.

  In addition, in the thermogravimetric measurement method specified for JIS K7120 plastic at a temperature rising rate of 5 ° C./min, the weight reduction rate of the adhesive layer 2 when heated to 100 ° C. to 260 ° C. (the weight reduction rate B−the weight reduction) The slope X [° C./min] of the rate A) can be obtained using the following formula A, where time A when reaching 100 ° C. is time A and time B when reaching 260 ° C. is time B: .

Inclination X =
-{(Weight reduction rate B-Weight reduction rate A) / (Time B-Time A)} Expression A

  Moreover, when the inclination of the weight reduction rate when heated to 100 ° C. to 260 ° C. is X [° C./min], and the inclination of the weight reduction rate when heated to 100 ° C. to 180 ° C. is Y [° C./min]. X / Y is preferably 1 or more and 3 or less, more preferably 1 or more and 2 or less. Thereby, it can be said that the weight reduction | decrease of the adhesion layer 2 in the temperature range of 100 to 260 degreeC has decreased gently over the whole of this temperature range. Therefore, even if the semiconductor device 10 is heated to about 260 ° C. in the solder reflow process and the constituent components adhering to the semiconductor chip 20 included in the semiconductor device 10 are vaporized again, they are rapidly vaporized in a certain temperature range. Is more accurately prevented or suppressed. As a result, the deterioration of the performance characteristics of the semiconductor device 10 due to the vaporization of the constituent components in the semiconductor device 10 is more reliably prevented.

  In addition, in the thermogravimetric measurement method prescribed in JIS K7120 plastic at a temperature rising rate of 5 ° C./min, the slope Y [° C./min] of the weight reduction rate of the adhesive layer 2 when heated to 100 ° C. to 180 ° C. is In the following formula A, the weight loss rate and time value at 260 ° C. can be obtained by changing the weight loss rate and time value at 180 ° C.

  Furthermore, when heated from room temperature to 260 ° C., it is preferable that an exothermic peak in differential thermal analysis is recognized in a temperature range of 100 ° C. or more and 200 ° C. or less. Such an exothermic peak is recognized when the pressure-sensitive adhesive layer 2 is cured. Therefore, by confirming the exothermic peak within such a range, in the solder reflow process in which the resin composition contained in the adhesive layer 2 is heated to about 260 ° C., the resin composition remaining in an uncured state is surely obtained. It can be cured.

  Moreover, it is preferable that the magnitude | size of this exothermic peak is 70 mJ / mg or more and 1800 mJ / mg or less. Thereby, it can be said that hardening of the adhesion layer 2 is performed smoothly, and in the solder reflow process which heats the adhesion layer 2 to about 260 degreeC, the resin composition which remains in a non-hardened state is more reliable. Can be cured.

  Furthermore, it is preferable that an endothermic peak in differential thermal analysis is observed in a temperature region of 260 ° C. or higher when heated from room temperature to 380 ° C. Such an endothermic peak is recognized when the resin composition contained in the adhesive layer 2 is vaporized. Therefore, when the endothermic peak is observed within the range, even if the resin composition contained in the adhesive layer 2 undergoes a solder reflow process in which the resin composition is heated to about 260 ° C., the resin composition is accurately suppressed from being vaporized. Or it can be prevented.

  Moreover, it is preferable that the magnitude | size of this endothermic peak is 100 mJ / mg or more and 2000 mJ / mg or less. Thereby, it can be said that hardening of the adhesion layer 2 is performed smoothly, and in the solder reflow process which heats the adhesion layer 2 to about 260 degreeC, the resin composition which remains in a non-hardened state is more reliable. Can be cured.

  The weight reduction ratios A, B, etc. are determined depending on the resin material mainly constituting the base material 4, softeners, fillers, antioxidants, light stabilizers, antistatic agents, lubricants mentioned as optional materials. Photopolymerization initiators listed as optional materials in addition to the types and contents of dispersants, neutralizers, colorants and the like, and base resins and curable resins contained in the resin composition constituting the adhesive layer 2 As appropriate, the type and content of the crosslinking agent, antistatic agent, tackifier, anti-aging agent, adhesion regulator, filler, colorant, flame retardant, softener, antioxidant, plasticizer, surfactant, etc. By setting, it can be set within the range as described above.

  Next, the semiconductor wafer processing pressure-sensitive adhesive tape 100 having such a configuration can be manufactured as follows, for example.

<Manufacturing method of adhesive tape for semiconductor wafer processing>
4 is a longitudinal sectional view for explaining a method of manufacturing the semiconductor wafer processing pressure-sensitive adhesive tape shown in FIG. In the following description, the upper side in FIG. 4 is referred to as “upper” and the lower side is referred to as “lower”.

[1B] First, a base material 4 is prepared, and an adhesive layer 2 is formed on the base material 4 (see FIG. 4A).

  Although it does not specifically limit as a manufacturing method of the base material 4, For example, general shaping | molding methods, such as a calendering method, an inflation extrusion method, extrusion molding methods, such as a T-die extrusion method, and a wet casting method, are mentioned. In addition, when the base material 4 is comprised with a laminated body, as a manufacturing method of the base material 4 of this structure, shaping | molding methods, such as a co-extrusion method and a dry lamination method, are used, for example.

  Moreover, the base material 4 can be used without extending | stretching, and you may make it use what gave the uniaxial or biaxial extending | stretching process further as needed. Further, for the purpose of improving the adhesion between the base material 4 and the adhesive layer 2, the surface of the base material 4 is subjected to corona treatment, chromic acid treatment, mat treatment, ozone exposure treatment, flame exposure treatment, and high piezoelectric exposure. Surface treatment such as treatment, ionizing radiation treatment, primer treatment, and anchor coat treatment may be applied.

  In addition, the adhesive layer 2 is applied by adhering or spreading a liquid material obtained by dissolving a resin composition, which is a constituent material of the adhesive layer 2, in a solvent to form a varnish on the base material 4, and then volatilizing the solvent to adhere. It can be obtained by forming the layer 2.

  In addition, although it does not specifically limit as a solvent, For example, methyl ethyl ketone, acetone, toluene, dimethylformaldehyde, etc. are mentioned, Among these, it can use 1 type or in combination of 2 or more types.

  Moreover, application | coating or dispersion | distribution of the liquid material on the base material 4 can be performed using methods, such as die coating, curtain die coating, gravure coating, comma coating, bar coating, and lip coating.

[2B] Next, the base material 4 is left in the thickness direction of the pressure-sensitive adhesive layer 2 so that the center side and the outer peripheral side are separated from the pressure-sensitive adhesive layer 2 formed on the base material 4. By removing a part of the pressure-sensitive adhesive layer 2 in a ring shape, the pressure-sensitive adhesive layer 2 is provided with a center portion 122 and an outer peripheral portion 121 (see FIG. 4B).

  As a method for removing a part of the adhesive layer 2 in an annular shape, for example, after punching out so as to surround a region to be removed, a method of removing the adhesive layer 2 located in the punched region can be mentioned.

  Moreover, the punching with respect to the area | region which should be removed can be performed using the method using a roll-shaped metal mold | die, and the method using a press metal mold | die, for example. Especially, the method of using the roll-shaped metal mold | die which can manufacture the adhesive tape 100 continuously is preferable.

  In this step, a part of the adhesive layer 2 is punched into a ring shape (circular shape) to form the center part 122 and the outer peripheral part 121. However, the shape of the part of the adhesive layer 2 punched out is the semiconductor device described above. In this manufacturing method, the outer peripheral portion 121 of the adhesive layer 2 may have any shape as long as the outer peripheral portion 121 can be fixed by wafer ring. Specifically, examples of the shape to be punched include, in addition to the circular shape described above, an elliptical shape such as an elliptical shape and a saddle shape, and a polygonal shape such as a quadrangular shape and a pentagonal shape.

[2B] Next, by laminating the separator 1 on the adhesive layer 2 formed on the substrate 4, an adhesive tape 100 in which the adhesive layer 2 is coated with the separator 1 is obtained (FIG. 4C). reference.).

  The method for laminating the separator 1 on the adhesive layer 2 is not particularly limited, and for example, a laminating method using a roll or a laminating method using a press can be used. Among these, a laminate method using a roll is preferable from the viewpoint of productivity that can be continuously produced.

  In addition, although it does not specifically limit as the separator 1, A polypropylene film, a polyethylene film, a polyethylene terephthalate film etc. are mentioned.

  Moreover, since the separator 1 is peeled off when the adhesive tape 100 is used, a separator whose surface is subjected to a release treatment may be used. Examples of the release treatment include a treatment for coating a release agent on the surface of the separator 1 and a treatment for forming fine irregularities on the surface of the separator 1. Examples of the release agent include silicone-based, alkyd-based, and fluorine-based agents.

  Through the steps as described above, the pressure-sensitive adhesive tape 100 covered with the separator 1 can be formed.

  In addition, the adhesive tape 100 covered with the separator 1 manufactured in the present embodiment is used after the adhesive tape 100 is peeled from the separator 1 in the semiconductor device manufacturing method using the adhesive tape 100 described above.

  Moreover, when peeling this separator 1 from the adhesive layer 2 which the separator 1 coat | covers, it is preferable to peel the separator 1 at an angle of 90 degree | times or more and 180 degrees or less with respect to the surface of the adhesive layer 2. FIG. By making the angle which peels the separator 1 into the said range, peeling other than the interface of the adhesion layer 2 and the separator 1 can be prevented reliably.

  In the present embodiment, the semiconductor device 10 is applied to a quad flat package (QFP), and the semiconductor device 10 having such a configuration is manufactured using the adhesive tape 100. However, the present invention is limited to this case. The adhesive tape 100 can be applied to manufacture various types of semiconductor packages, such as dual in-line package (DIP), plastic leaded chip carrier (PLCC), low profile quad. -Flat package (LQFP), Small outline package (SOP), Small outline J lead package (SOJ), Thin small outline package (TSOP), Thin quad flat package (TQFP), Tape・ Career ・Memory such as package (TCP), ball grid array (BGA), chip size package (CSP), matrix array package ball grid array (MAPBGA), chip stacked chip size package And can be applied to logic elements.

  In this embodiment, the adhesive tape for processing a semiconductor wafer according to the present invention is used for dicing a large semiconductor wafer such as 12 inches and picking up the obtained cut piece. Needless to say, the present invention can be applied to a small semiconductor wafer such as 8 inches instead of an inch semiconductor wafer, and can also be applied to an 18 inch semiconductor wafer larger than 12 inches.

  As mentioned above, although the adhesive tape for wafer processing for semiconductors of this invention was demonstrated, this invention is not limited to these.

  For example, an arbitrary component that can exhibit the same function may be added to each layer included in the pressure-sensitive adhesive tape for semiconductor wafer processing of the present invention.

  Moreover, the structure of each layer with which the pressure-sensitive adhesive tape for semiconductor wafer processing of the present invention is provided can be replaced with an arbitrary one that can exhibit the same function, or an arbitrary structure can be added.

Next, specific examples of the present invention will be described.
In addition, this invention is not limited to description of these Examples at all.

1. Preparation of raw materials First, raw materials used for the production of adhesive tapes for semiconductor wafer processing of each example and each comparative example are shown below.

(Resin material 1)
The resin material 1 contains 60 parts by weight of polypropylene and 40 parts by weight of a block copolymer composed of a polystyrene segment represented by the following general formula (1) and a vinyl polyisoprene segment represented by the following general formula (2). I prepared something.

（式（１）中、ｎは２以上の整数）

(In formula (1), n is an integer of 2 or more)

（式（２）中、ｎは２以上の整数）

(In formula (2), n is an integer of 2 or more)

(Resin material 2)
As the resin material 2, a material containing 70 parts by weight of a vinyl chloride resin and 30 parts by weight of dioctyl phthalate (DOP) as a plasticizer was prepared.

(Resin material 3)
As the resin material 3, linear low density polyethylene was prepared.

(Resin material 4)
As the resin material 4, a propylene-based thermoplastic elastomer containing a propylene component and an ethylene propylene rubber component (manufactured by Mitsubishi Chemical Co., Ltd., “trade name: Zelas”) was prepared.

(Resin material 5)
As the resin material 5, a methacrylic ester resin (manufactured by Kuraray Co., Ltd., “trade name: Parapet SA-F”) was prepared.

(Resin material 6)
As the resin material 6, a polyester elastomer resin (“trade name: Nouvelan” manufactured by Teijin Chemicals Ltd.) was prepared.

(Resin material 7)
As the resin material 7, low density polyethylene (trade name: Sumikasen, MFR = 1.5, manufactured by Sumitomo Mitsui Polyolefin Co., Ltd.) was prepared.

(Resin material 8)
As the resin material 8, an ethylene-methacrylic acid copolymer (trade name: Nucrel, MFR = 2.0, manufactured by Mitsui DuPont Polychemical Co., Ltd.) was prepared.

(Resin material 9)
As the resin material 9, softened polyvinyl chloride (trade name: KM film, manufactured by Mitsubishi Chemical MKV) was prepared.

(Resin material 10)
As the resin material 10, polybutylene terephthalate (trade name: Novaduran 5510S, manufactured by Mitsubishi Engineering Plastics) was prepared.

(Resin material 11)
A methacrylic resin (trade name: Parapet SA, manufactured by Kuraray Co., Ltd.) was prepared as the resin material 11.

(Resin material 12)
As the resin material 12, an ionomer (trade name: High Milan 1706, manufactured by Mitsui DuPont) was prepared.

(Resin material 13)
As the resin material 13, soft polyethylene terephthalate (trade name: Diafoil soft C type, manufactured by Mitsubishi Chemical Polyester Film Co., Ltd.) was prepared.

(Resin material 14)
As resin material 14, for 100 parts by mass of ionomer resin (Himiran (HM) 1855 (trade name), manufactured by Mitsui DuPont), thermoplastic elastomer (HSBR, hydrogenated styrene / butadiene copolymer, Dynalon 1320P (trade name) , Manufactured by JSR Corporation) and 10 parts by mass were prepared.

(Resin material 15)
As resin material 15, for 100 parts by mass of ionomer resin (Himiran (HM) 1855 (trade name), manufactured by Mitsui DuPont), thermoplastic elastomer (HSBR, hydrogenated styrene / butadiene copolymer, Dynalon 1320P (trade name) , Manufactured by JSR Corporation), and a mixture of 100 parts by mass was prepared.

(Resin material 16)
As resin material 16, for 100 parts by mass of ionomer resin (Himiran (HM) 1855 (trade name), manufactured by Mitsui DuPont), thermoplastic elastomer (HSBR, hydrogenated styrene / butadiene copolymer, Dynalon 1320P (trade name) A product prepared by mixing 300 parts by mass) (manufactured by JSR Corporation) was prepared.

(Base resin 1)
The base resin 1 was prepared with 10 parts by weight of the first copolymer and 90 parts by weight of the second copolymer. The first copolymer is a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 70 parts by weight of butyl acrylate, 25 parts by weight of 2-ethylhexyl acrylate, and 5 parts by weight of vinyl acetate. A polymer was used. Further, as the second copolymer, 50 parts by weight of 2-ethylhexyl acrylate, 10 parts by weight of butyl acrylate, 37 parts by weight of vinyl acetate, and 3 parts by weight of 2-hydroxyethyl methacrylate are copolymerized. A copolymer having a weight average molecular weight of 300,000 was obtained.

(Base resin 2)
As the base resin 2, an acrylic resin containing an amide group and having a glass transition temperature of −15 ° C. was prepared.

(Base resin 3)
As base resin 3, methyl acrylate (Tg in homopolymer: 8 ° C.) 45 parts by weight, ethyl acrylate (Tg in homopolymer: −24 ° C.) 40 parts by weight, and 2-hydroxylethyl acrylate (homopolymer) Acrylic acid having a weight average molecular weight of 800,000 obtained by copolymerization of 15 parts by weight in ethyl acetate in the presence of 0.2 part by weight of 2,2′-azobisisobutyronitrile. A double bond-introduced acrylic polymer in which 10 parts by weight of 2-methacryloyloxyethyl isocyanate is added to the solution containing a polymer and subjected to an addition reaction to introduce a carbon-carbon double bond into the acrylic polymer molecule ( The number of side chains having a carbon-carbon double bond is 8% of the total number of side chains).

(Base resin 4)
As base resin 4, 50 parts by weight of methyl acrylate (Tg in homopolymer: 8 ° C.), 30 parts by weight of 2-ethylhexyl acrylate (Tg in homopolymer: −50 ° C.), and 2-hydroxylethyl acrylate ( A weight average molecular weight of 1,000,000 obtained by copolymerizing 20 parts by weight of a homopolymer (Tg: 55 ° C.) in ethyl acetate in the presence of 0.2 part by weight of 2,2′-azobisisobutyronitrile. A double bond-introduced acrylic system in which 10 parts by weight of 2-methacryloyloxyethyl isocyanate is added to the solution containing the acrylic polymer and subjected to an addition reaction, and a carbon-carbon double bond is introduced into the acrylic polymer molecule. A polymer (the number of side chains having carbon-carbon double bonds is 9% of the total number of side chains) was prepared.

(Base resin 5)
As the base resin 5, an acrylic copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 90 parts by weight of butyl acrylate and 10 parts by weight of acrylic acid in a toluene solution by a conventional method was prepared.

(Base resin 6)
As base resin 6, methyl acrylate: 75 parts by weight, methoxyethyl acrylate: 10 parts by weight, N-vinylpyrrolidone: 10 parts by weight, and 2-hydroxyethyl acrylate: 5 parts by weight are copolymerized in ethyl acetate. To obtain a solution (A) containing an acrylic copolymer, and then 60 parts by weight of 2-methacryloyloxyethyl isocyanate is added to the solution (A), and further 0.1 parts by weight of dibutyltin dilaurate as a catalyst. In addition, by reacting at 50 ° C. for 24 hours, a double bond-introducing acrylic polymer having a carbon-carbon double bond at the end of the side chain (weight average molecular weight: 500,000) was prepared. This double bond-introduced acrylic polymer contains 2-methacryloyloxyethyl isocyanate in 90 mol% of the hydroxyl group at the end of the side chain in the acrylic copolymer (hydroxyl group derived from 2-hydroxyethyl acrylate). The isocyanate group has an addition reaction.

(Base resin 7)
As the base resin 7, an acrylic copolymer (weight average molecular weight 200,000, Tg = −35 ° C.) composed of 2-ethylhexyl acrylate, methyl acrylate, and 2-hydroxylethyl acrylate was prepared.

(Base resin 8)
As the base resin 8, an acrylic copolymer (weight average molecular weight 500,000, Tg = -30 ° C.) having butyl acrylate and 2-hydroxyethyl acrylate as main components was prepared.

(Curable resin 1)
As the curable resin 1, a 15-functional oligomer urethane acrylate (manufactured by Miwon Specialty Chemical, product number: Miramer SC2152) was prepared.

(Curable resin 2)
As the curable resin 2, a 15-functional oligomer urethane acrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., product number: UA-53H) was prepared.

(Curable resin 3)
As curable resin 3, what contains the bifunctional urethane acrylate whose weight average molecular weight is 11000 and the pentafunctional acrylate monomer whose weight average molecular weight is 500 was prepared.

(Curable resin 4)
As the curable resin 4, a bifunctional urethane acrylate having a weight average molecular weight of 11000 was prepared.

(Curable resin 5)
As the curable resin 5, a 9-functional oligomer urethane acrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., product number: UA-32P) was prepared.

(Curable resin 6)
The curable resin 6 was prepared by reacting pentaerythritol triacrylate and diisocyanate (viscosity at 25 ° C. of 10 Pa · s).

(Curable resin 7)
Tetraethylene glycol diacrylate (molecular weight 247) was prepared as the curable resin 7.

(Curable resin 8)
As the curable resin 8, tripropylene glycol diacrylate (molecular weight 300) was prepared.

(Curable resin 9)
As the curable resin 9, dipentaerythritol hexaacrylate (trade name “Kayarad DPHA”, manufactured by Nippon Kayaku Co., Ltd.) was prepared.

(Curable resin 10)
Tetramethylol methane tetraacrylate was prepared as the curable resin 10.

(Crosslinking agent 1)
As crosslinking agent 1, polyisocyanate (manufactured by Nippon Polyurethane Industry Co., Ltd., product number: Coronate L) was prepared.

(Crosslinking agent 2)
As crosslinking agent 2, an isocyanate-based acryloyl group-containing monomer was prepared.

(Photopolymerization initiator 1)
As photopolymerization initiator 1, benzyl dimethyl ketal (manufactured by Ciba Specialty Chemicals, product number: Irgacure 651) was prepared.

(Photopolymerization initiator 2)
As photopolymerization initiator 2, 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1-propan-1-one (manufactured by Ciba Specialty Chemicals, product number: Irgacure 2959) Prepared.

(Photopolymerization initiator 3)
As photopolymerization initiator 3, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1 (manufactured by Ciba Specialty Chemicals, product number: Irgacure 369) was prepared.

(Photopolymerization initiator 4)
As photopolymerization initiator 4, α-hydroxycyclohexyl phenyl ketone was prepared.

2. Preparation of adhesive tape for semiconductor wafer processing [Example 1]
After kneading the resin material 1 with a biaxial kneader, the kneaded material was extruded with an extruder to prepare a substrate 4 having a thickness of 100 μm.

  Next, base resin 1 (100 parts by weight), curable resin 1 (140 parts by weight with respect to 100 parts by weight of base resin), cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of base resin), and photopolymerization start A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material was bar-coated on the substrate 4 so that the thickness of the pressure-sensitive adhesive layer 2 after drying was 10 μm, and then dried at 80 ° C. for 10 minutes to obtain the pressure-sensitive adhesive tape 100 of Example 1. It was.

[Examples 2 to 20, Comparative Examples 1 and 2]
The semiconductors of Examples 2 to 20 and Comparative Examples 1 and 2 were the same as Example 1 except that the constituent materials contained in the substrate 4 and the adhesive layer 2 and their contents were changed as shown in Table 1. An adhesive tape for wafer processing was obtained.

3. Evaluation Each of the obtained adhesive tapes for wafer processing for semiconductors of Examples and Comparative Examples was evaluated by the following methods.

3-1. Evaluation of Weight Reduction Rate First, the weight reduction rates A and B were determined for the semiconductor wafer processing adhesive tapes of each Example and each Comparative Example using the above-described method for measuring the weight reduction rates A and B.

  Moreover, based on the obtained weight reduction rate A, B, time A when reaching 100 ° C., time B when reaching 260 ° C., when heated to 100 ° C. to 260 ° C. using the following formula A The slope X of the weight loss rate of

  Furthermore, the inclination Y of the weight reduction rate when heated to 100 ° C. to 180 ° C. is changed from the weight reduction rate and time value at 260 ° C. to the weight reduction rate and time value at 180 ° C. in the formula A. To obtain X / Y.

3-2. Evaluation of differential thermal analysis About the adhesive tape for semiconductor wafer processing of each Example and each comparative example, differential thermal analysis is performed in a temperature range from room temperature to 380 ° C, and an endothermic peak is observed and an exothermic peak is observed. Temperature, endothermic peak size, and exothermic peak size were determined.

3-3. Evaluation of characteristics of semiconductor device With respect to the adhesive tapes for processing semiconductor wafers of the respective examples and comparative examples, an 18-inch semiconductor wafer was placed on the adhesive layer 2 and lightly pressed, whereby the semiconductor wafer 7 Then, the semiconductor wafer was diced using a dicing saw (DFD6450, manufactured by DISCO), so that the wafer was separated into pieces of 10 mm × 10 mm.

Next, ultraviolet rays were irradiated from the back side of the adhesive tape (irradiation time: 20 seconds, irradiation intensity: 500 mJ / cm ² ).

  Next, an individualized product (semiconductor chip) obtained by dicing is picked up, and then mounted on a die pad via an adhesive layer, and then an electrode pad and a lead included in the individualized product are wire bonded. Electrically connected. And the semiconductor device was obtained by sealing an individualized product with a mold part.

Thus, about the semiconductor device obtained from the adhesive tape for wafer processing for semiconductors of each Example and each comparative example, after performing a moisture absorption treatment at 30 ° C. and 60% RH192h in a constant temperature and humidity chamber, an IR reflow device manufactured by TAMURA ( Package surface peak temperature: 265 ° C, temperature profile: adjusted according to JEDEC standards with reference to package surface temperature), repeated three times, cut the center of the package, polished the cut surface, and then made Olympus metal Using a microscope, the cross section of the package was observed to examine whether or not the package was broken.
Then, the evaluation standard for reflow resistance was evaluated based on the presence or absence of breakage as follows.

<Evaluation criteria for reflow resistance>
○: No destruction.
X: There is destruction.
Table 1 shows the evaluation results of various evaluations performed as described above.

  As shown in Table 1, in the adhesive tape for wafer processing for semiconductors of each example, the weight reduction rate A of the adhesive layer is 0.00001 wt% or more and 2.0 wt% or less, and the weight reduction rate of the adhesive layer. B is 1.0 wt% or more and 10.0 wt% or less, and by satisfying this relationship, the semiconductor device obtained from the adhesive tape for wafer processing for semiconductors of each example has excellent reflow resistance. The result was shown.

  On the other hand, the semiconductor wafer processing pressure-sensitive adhesive tape of each comparative example cannot satisfy the above relationship, and as a result, the semiconductor obtained from the semiconductor wafer processing pressure-sensitive adhesive tape of each comparative example. It was inferred that the device could not exhibit excellent reflow resistance.

DESCRIPTION OF SYMBOLS 1 Separator 2 Adhesive layer 4 Base material 7 Semiconductor wafer 9 Wafer ring 10 Semiconductor device 20 Semiconductor chip 21 Electrode pad 22 Wire 30 Die pad 40 Lead 50 Mold part 60 Adhesive layer 100 Adhesive tape for semiconductor wafer processing 121 Outer part 122 Central part

Claims (5)

A semiconductor wafer processing pressure-sensitive adhesive tape comprising a laminate comprising a base material containing a resin material and an adhesive layer laminated on the base material,
The adhesive layer contains an adhesive base resin, a curable resin that is cured by application of energy, a crosslinking agent, and a photopolymerization initiator,
The base resin is an acrylic resin,
The curable resin is a polyfunctional urethane acrylate, and the content thereof is 140 parts by weight or more and 200 parts by weight or less with respect to 100 parts by weight of the base resin.
The crosslinking agent is an isocyanate crosslinking agent, and the content thereof is 5 parts by weight or more and 13 parts by weight or less with respect to 100 parts by weight of the base resin.
The content of the photopolymerization initiator is 0.5 to 10 parts by weight with respect to 100 parts by weight of the base resin,
The pressure-sensitive adhesive tape for wafer processing for semiconductors satisfies the following requirements A and B , and the weight reduction rate of the pressure-sensitive adhesive layer when heated to 100 ° C. to 260 ° C. (weight reduction rate B−weight reduction rate A) Slope of -0.12 wt% / min or more, and the slope of weight reduction rate when heated to 100 ° C to 260 ° C is X [wt% / min], weight loss when heated to 100 ° C to 180 ° C A pressure-sensitive adhesive tape for semiconductor wafer processing , wherein X / Y is 1 or more and 2 or less when the rate gradient is Y [wt% / min] .
Requirement A: When the semiconductor wafer processing pressure-sensitive adhesive tape is heated from room temperature 25 ° C. to 100 ° C. in accordance with the thermogravimetric method of plastic specified in JIS K7120 at a temperature rising rate of 5 ° C./min, The weight reduction rate A of the adhesive layer is 0.00001 wt% or more and 2.0 wt% or less.
Requirement B: When the adhesive tape for wafer processing for a semiconductor is heated from room temperature 25 ° C. to 260 ° C. at a rate of temperature increase of 5 ° C./min according to the thermogravimetric method for plastic specified in JIS K7120, The weight reduction rate B of the adhesive layer is 1.0 wt% or more and 10.0 wt% or less. The pressure-sensitive adhesive tape for semiconductor wafer processing according to claim 1 , wherein an endothermic peak in differential thermal analysis is observed in a temperature region of 260 ° C or higher when heated from room temperature to 380 ° C. When heated from room temperature to 260 ° C., differential thermal exothermic peak in the analysis is 100 ° C. or higher, a semiconductor wafer processing adhesive tape according to claim 1 or 2 observed at 200 ° C. below the temperature region. The pressure-sensitive adhesive tape for semiconductor wafer processing according to any one of claims 1 to 3 , wherein the resin material is a mixture of polypropylene and an elastomer or a mixture of polyethylene and an elastomer. The pressure-sensitive adhesive tape for processing a semiconductor wafer according to any one of claims 1 to 4 , wherein a semiconductor wafer is laminated on the pressure-sensitive adhesive layer.

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