JP6915675B2 - Adhesive tape and base material for adhesive tape - Google Patents

Description

The present invention relates to an adhesive tape and a base material for an adhesive tape used by temporarily fixing at least one of a substrate and a component.

In response to the recent increase in the functionality of electronic devices and the expansion into mobile applications, the demand for higher density and higher integration of semiconductor devices is increasing, and the capacity and density of IC packages are increasing.

As a method for manufacturing these semiconductor devices, first, an adhesive tape is attached to a semiconductor substrate (semiconductor wafer) as a substrate, and while the periphery of the semiconductor substrate is fixed by wafer ring, the semiconductor substrate is subjected to a dying process using a dying saw. Is cut and separated (individualized) into individual semiconductor elements (semiconductor chips). Next, after an expanding step of forming a gap between adjacent semiconductor elements by radially stretching the adhesive tape using wafer ring, the separated semiconductor elements are pushed up by using a needle. , Perform the pick-up process to pick up. Next, the picked up semiconductor element is transferred to a mounting process for mounting on a metal lead frame or a substrate (for example, a tape substrate, an organic hard substrate, etc.). The picked-up semiconductor element is adhered to a lead frame or a substrate via, for example, an underfill material in the mounting process, and then the semiconductor element is sealed on the lead frame or the substrate by a sealing portion to form a semiconductor device. Manufactured.

In recent years, various studies have been made on adhesive tapes used in the manufacture of such semiconductor devices (see, for example, Patent Document 1).

This adhesive tape generally has a base material (film base material) and an adhesive layer formed on the base material, and the semiconductor substrate is fixed by the adhesive layer. Further, the adhesive layer is usually composed of a resin composition containing an adhesive base resin, a photocurable resin, and the like so that the semiconductor element can be picked up after the dicing step of the semiconductor substrate. That is, when energy is applied to the adhesive layer after the dicing step, the resin composition is cured and the adhesiveness of the adhesive layer is lowered. Therefore, when the semiconductor element is pushed up by using a needle in the pick-up process, , The adhesive tape can be peeled off from the semiconductor element, and as a result, the pickup of the semiconductor element can be realized.

However, in the manufacturing of a semiconductor device using this adhesive tape, in the expanding step of extending the adhesive tape radially, it is not possible to form a sufficiently large gap between adjacent semiconductor elements. Due to this, there is a problem that the semiconductor element cannot be picked up with excellent accuracy in the pick-up process, which is the next process.

Further, such a problem is not limited to the case where a semiconductor element as a component is obtained by separating a semiconductor substrate (wafer for semiconductor) as a substrate, but also a glass substrate, a ceramic substrate, a resin material substrate and a metal material. The same occurs when various substrates such as substrates are fragmented to obtain individualized components.

Japanese Unexamined Patent Publication No. 2009-245989

The present invention provides excellent accuracy when picking up a part with the part pushed up by a needle while forming a sufficiently large gap between adjacent parts by expanding the adhesive tape in a radial pattern. It is an object of the present invention to provide an adhesive tape from which parts can be picked up, and a base material for the adhesive tape used for obtaining the adhesive tape.

Such an object is achieved by the present invention described in the following (1) to ( 6).
(1) An adhesive tape provided with a base material and an adhesive layer laminated on one surface of the base material.
In a state where the substrate is brought into contact with the adhesive layer and fixed on the adhesive layer, the substrate is cut and individualized so as to reach halfway in the thickness direction of the substrate from the substrate. By forming a plurality of parts and then pulling out the parts from the opposite side of the base material while the adhesive tape is stretched in the plane direction and the parts are pushed up from the base material side. Used when separating from the adhesive layer,
The base material contains a polyolefin resin and has a yield point when the size of the base material before elongation is 100% and the base material is extended to a size of 150% in the plane direction at 60 ° C. Without
The tangential elastic modulus in the stress-strain curve measured when the base material is stretched to a size of 150% in the plane direction at 60 ° C. is 0 MPa or more and 80 MPa or less.
An adhesive tape characterized by satisfying the following requirement A.
Requirement A: The silicon substrate is fixed to the adhesive tape, and then the silicon substrate is cut into pieces by cutting the silicon substrate in the thickness direction until it reaches the middle of the base material using a blade having a thickness of 30 μm. After obtaining a silicon chip having a size of 4 mm in length and 4 mm in width, when the base material is stretched to a size of 120% in the plane direction of the base material at 60 ° C., the adjacent silicon chips face each other. The width of the gap formed between the side surfaces shall be 460 μm or more and less than 540 μm.

( 2 ) The adhesive tape according to (1) above, wherein the polyolefin-based resin is at least one of low-density polyethylene and an ethylene copolymer.

( 3 ) The adhesive layer contains a base resin having adhesiveness and a curable resin that is cured by applying energy.
The adhesive tape according to (1) or (2) above, wherein energy is applied to the adhesive layer and the adhesive layer is cured to reduce its adhesive strength.

( 4 ) The adhesive tape according to any one of (1) to (3 ) above, wherein the adhesive layer has a thickness of 5 μm or more and 50 μm or less.

( 5 ) The adhesive tape according to any one of (1) to (4 ) above, wherein the base material has a thickness of 30 μm or more and 150 μm or less.

(6) Adhesive tape base material, a the substrate for adhesive tape to be applied to the adhesive tape and a corresponding one of the laminated on the surface adhesion of substrate for adhesive tape layer,
The adhesive tape is cut so that the substrate is fixed on the adhesive layer in contact with the adhesive layer so as to reach halfway from the substrate in the thickness direction of the adhesive tape base material. Then, a plurality of parts are formed by individualizing the parts, and then, while the adhesive tape is stretched in the plane direction, the parts are pushed up from the adhesive tape base material side, and the parts are adhered to the adhesive. It is used to separate from the adhesive layer by pulling it out from the opposite side of the tape substrate.
The base material for the adhesive tape contains a polyolefin resin and contains
The adhesive layer is used by laminating the adhesive layer on one surface of the adhesive tape base material, the size of the pressure-sensitive adhesive tape base material before elongation is 100%, and the pressure-sensitive adhesive tape base material is used at 60 ° C. When extended to a size of 150% in the plane direction, it has no yield point and has no yield point .
The tangential elastic modulus in the stress-strain curve measured when the adhesive tape base material is stretched to a size of 150% in the plane direction at 60 ° C. is 0 MPa or more and 80 MPa or less.
A base material for an adhesive tape, which is characterized by satisfying the following requirement A.
Requirement A: The silicon substrate is fixed to the adhesive tape, and then the silicon substrate is cut into pieces by cutting the silicon substrate in the thickness direction until it reaches the middle of the base material using a blade having a thickness of 30 μm. After obtaining a silicon chip having a size of 4 mm in length and 4 mm in width, when the base material is stretched to a size of 120% in the plane direction of the base material at 60 ° C., the adjacent silicon chips face each other. The width of the gap formed between the side surfaces shall be 460 μm or more and less than 540 μm.

According to the present invention, when the size of the base material before stretching is 100%, the base material provided in the adhesive tape has a yield point even if it is stretched to a size of 150% in the plane direction at 60 ° C. Therefore, it is possible to form a sufficiently large gap between adjacent parts by expanding the adhesive tape so as to extend it radially. Therefore, when the parts are picked up with the parts pushed up by the needle while forming a gap of sufficient size between the adjacent parts, the parts can be picked up with excellent accuracy.

It is a vertical cross-sectional view which shows an example of the semiconductor device manufactured using the adhesive tape of this invention. It is a vertical cross-sectional view for demonstrating the method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of this invention. It is a vertical cross-sectional view for demonstrating the method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of this invention. It is a vertical sectional view which shows the embodiment of an adhesive tape. It is a vertical sectional view for demonstrating the method of manufacturing the adhesive tape shown in FIG.

Hereinafter, the adhesive tape of the present invention will be described in detail.
First, prior to explaining the adhesive tape of the present invention, a semiconductor device manufactured by using the adhesive tape of the present invention will be described.

<Semiconductor device>
FIG. 1 is a vertical cross-sectional view showing an example of a semiconductor device manufactured by using the adhesive tape of the present invention. In the following description, the upper side in FIG. 1 is referred to as "upper" and the lower side is referred to as "lower".

The semiconductor device 10 shown in FIG. 1 seals a semiconductor chip (semiconductor element) 20, an interposer (board) 30 that supports the semiconductor chip 20, a plurality of conductive bumps (terminals) 70, and a semiconductor chip 20. It has a mold portion (sealing portion) 17 for stopping.

The interposer 30 is an insulating substrate, and is made of various resin materials such as polyimide, epoxy, cyanate, and bismaleimide triazine (BT resin). The plan view shape of the interposer 30 is usually a quadrangle such as a square or a rectangle.

On the upper surface (one surface) of the interposer 30, for example, a terminal 41 made of a conductive metal material such as copper is provided in a predetermined shape.

Further, the interposer 30 is formed with a plurality of vias (through holes) (through holes) which are not shown so as to penetrate in the thickness direction thereof.

One end (upper end) of each bump 70 is electrically connected to a part of the terminal 41 via each via, and the other end (lower end) protrudes from the lower surface (the other surface) of the interposer 30. There is.

The portion of the bump 70 protruding from the interposer 30 has a substantially spherical shape (ball shape).

The bump 70 is composed mainly of a brazing material such as solder, silver brazing, copper brazing, and phosphor copper brazing.

Further, a terminal 41 is formed on the interposer 30. The terminal 21 of the semiconductor chip 20 is electrically connected to the terminal 41 via the connecting portion 81.

In the present embodiment, as shown in FIG. 1, the terminal 21 is configured to protrude from the surface side formed on the semiconductor chip 20, and the terminal 41 is also configured to protrude from the interposer 30. ing.

Further, the gap between the semiconductor chip 20 and the interposer 30 is filled with an underfill material made of various resin materials, and the cured product of the underfill material forms a sealing layer 80. .. The sealing layer 80 has a function of improving the bonding strength between the semiconductor chip 20 and the interposer 30, and a function of preventing foreign matter, moisture, and the like from entering the gap.

Further, on the upper side of the interposer 30, the semiconductor chip 20 and the mold portion 17 formed so as to cover the interposer 30 are composed of a cured product (encapsulating material) of the semiconductor encapsulating material. The semiconductor chip 20 is sealed in the semiconductor device 10 to prevent foreign matter, moisture, and the like from entering the semiconductor chip 20.

As shown in FIG. 3, the semiconductor chip 20 (semiconductor element) has a semiconductor chip main body 23 (semiconductor element main body) and terminals 21 projecting from the lower surface side of the semiconductor chip main body 23. There is. The semiconductor chip main body 23 has a circuit (not shown) built on the upper surface side thereof, and is mainly composed of a semiconductor material such as _{Si, SiC, GaN, or Ga 2} O _3.

The semiconductor device 10 and the semiconductor chip 20 having such a configuration are manufactured as follows, for example, by a method for manufacturing a semiconductor device using an adhesive tape.

<Manufacturing method of semiconductor devices>
2 and 3 are vertical cross-sectional views for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using an adhesive tape. In the following description, the upper side in FIGS. 2 and 3 is referred to as "upper" and the lower side is referred to as "lower".

[1A] First, an adhesive tape 100 (hereinafter, may be simply referred to as "adhesive tape 100") composed of a laminated body having a base material 4 and an adhesive layer 2 laminated on the upper surface of the base material 4. After that, as shown in FIG. 2A, the adhesive tape 100 is placed on the dicer table 200.
A detailed description of the adhesive tape 100 will be given later.

[2A] Next, as shown in FIG. 2B, a semiconductor substrate 7 (semiconductor wafer) is placed on the adhesive layer 2 on the central portion 122 thereof, and lightly pressed to laminate (attach) the semiconductor substrate 7. ) (Attachment process).

The semiconductor substrate 7 is preliminarily formed with a circuit included in the semiconductor chip 20 (semiconductor chip main body 23) formed by individualizing the upper surface thereof, and terminals 21 are preliminarily formed on the lower surface thereof. The semiconductor substrate 7 is attached to the adhesive tape 100 with the upper surface on the side where the circuit is formed as the adhesive layer 2 side.

Further, the semiconductor substrate 7 may be attached to the adhesive tape 100 in advance and then installed on the dicer table 200.

[3A] Next, the outer peripheral portion 121 of the adhesive layer 2 is fixed by the wafer ring 9, and then the semiconductor substrate 7 as a substrate is cut (diced) using a dicing saw (blade) (not shown) to form the semiconductor substrate 7. The semiconductor chip 20 as a component is obtained on the adhesive tape 100 by disassembling the above (individualizing step; see FIG. 2C).

At this time, the adhesive tape 100 has a buffering action, and prevents cracks, chips, etc. when cutting the semiconductor substrate 7.

Further, as shown in FIG. 2C, the semiconductor substrate 7 is cut by using the blade so as to reach the middle of the base material 4 in the thickness direction. As a result, the semiconductor substrate can be reliably separated.

At this time, the semiconductor substrate 7 is cut for the purpose of preventing the dust generated when the semiconductor substrate 7 is cut from scattering and further suppressing the semiconductor substrate 7 from being unnecessarily heated. The semiconductor substrate 7 is cut while supplying water.

[4A] Next, the adhesive tape 100 is formed by pushing the central portion 210 upward with respect to the outer peripheral portion 220 of the dicer table 200 while maintaining the fixation by the wafer ring 9 on the outer peripheral portion 121 of the adhesive layer 2. Is radially stretched, thereby forming a gap having a certain interval between the semiconductor substrates 7 that have been separated into pieces, that is, the semiconductor chips 20 as components (expanding step; see FIG. 2 (d)). Then, in the state where this gap is formed, the semiconductor chip 20 is picked up by suction with a vacuum collet or air tweezers (pick-up step; see FIG. 2E).

The pickup of the semiconductor chip 20 cures the adhesive layer 2 by applying energy to the adhesive layer 2 after the expanding step of radially stretching the adhesive tape 100, and reduces the adhesive strength of the adhesive layer 2. Then, by projecting a needle (not shown) provided on the dicer table 200 from the dicer table 200 in the thickness direction, the semiconductor chip 20 attached to the adhesive tape 100 is pushed up by using the needle. It is carried out in a state of being peeled off from the adhesive tape 100. As described above, the energy may be applied to the adhesive layer 2 after the expanding step or prior to the expanding step.

In this step [4A], when the semiconductor chip 20 is picked up in a state where the semiconductor chip 20 is pushed up by a needle while forming a gap between adjacent semiconductor chips 20, the adhesive tape 100 of the present invention is used. Used. That is, when the semiconductor chip 20 is picked up in this step [4A], the adhesive tape 100 includes a base material 4 and an adhesive layer 2, and the base material 4 contains a polyolefin resin and is a base material 4 before elongation. When the base material 4 is stretched to a size of 150% in the plane direction at 60 ° C., a material having no yield point is used.

Therefore, in this step [4A], when the adhesive tape 100 is radially stretched using the dicer table 200, a gap having a sufficient size can be formed between the adjacent semiconductor chips 20. Therefore, the semiconductor chip 20 can be formed. Can be picked up with excellent accuracy, but the detailed explanation will be given later.

By going through the steps [1A] to [4A] as described above, the semiconductor chip 20 is separated (individualized) from the semiconductor substrate 7 by using the adhesive tape 100. That is, in a state where the semiconductor substrate 7 is fixed on the adhesive layer 2 included in the adhesive tape 100, the semiconductor substrate 7 is cut so as to reach halfway in the thickness direction of the base material 4, and the semiconductor substrate 7 is cut into individual pieces. A plurality of semiconductor chips 20 are formed by the formation. After that, the adhesive layer 2 is cured by applying energy to the adhesive layer 2 in a state where gaps at regular intervals are formed between the semiconductor chips 20, and then the semiconductor chip 20 is further pushed up from the base material 4 side. In this state, the semiconductor chip 20 is separated from the adhesive layer 2 by pulling it out from the opposite side of the base material 4.

[5A] Next, the picked-up semiconductor chip 20 is passed from a vacuum collet or an air tweezers to a mounting probe or the like and turned upside down, and then, as shown in FIG. 3A, the terminal 21 included in the semiconductor chip 20 is provided. And the terminal 41 provided in the interposer 30 are placed on the interposer 30 so as to face each other via the solder bump 85 provided on the terminal 41. That is, the semiconductor chip 20 (semiconductor element) is placed on the interposer 30 (board) with the surface on which the terminal 21 of the semiconductor chip 20 is formed facing down.

[6A] Next, as shown in FIG. 3B, the interposer 30 and the semiconductor chip 20 are brought close to each other while heating the solder bump 85 interposed between the terminal 21 and the terminal 41.

As a result, the molten solder bump 85 comes into contact with both the terminal 21 and the terminal 41, and by cooling in this state, the connecting portion 81 is formed, and as a result, the terminal 21 and the terminal are formed via the connecting portion 81. 41 is electrically connected (mounting process; see FIG. 3C).

[7A] Next, the gap formed between the semiconductor chip 20 and the interposer 30 is filled with an underfill material (sealing material) composed of various resin materials, and then the underfill material is filled. By curing, a sealing layer 80 composed of a cured product of the underfill material is formed (sealing layer forming step; see FIG. 3D).

[8A] Next, the semiconductor chip 20 is molded with the interposer 30 by forming a mold portion 17 (sealing portion) on the upper side of the interposer 30 so as to cover the semiconductor chip 20 and the interposer 30. Along with sealing with the portion 17, a bump 70 electrically connected to a part of the terminal 41 via a via provided in the interposer 30 is formed so as to protrude from the lower side of the interposer 30 (FIG. 3). (E).).

Here, for sealing by the mold portion 17, for example, a molding mold having an internal space corresponding to the shape of the mold portion 17 to be formed is prepared, and the semiconductor chip 20 and the interposer 30 arranged in the internal space are used. The internal space is filled with a powdery semiconductor encapsulant material so as to cover the above. Then, in this state, the semiconductor encapsulating material is cured by heating to obtain a cured product of the semiconductor encapsulating material.

The semiconductor device 10 can be obtained by the method for manufacturing a semiconductor device having the above steps. More specifically, by repeatedly performing the steps [4A] to [8A] after performing the steps [1A] to [8A], a plurality of semiconductor devices 10 can be collectively assembled from one semiconductor substrate 7. Can be manufactured.

Hereinafter, the adhesive tape 100 of the present invention used in such a method for manufacturing the semiconductor device 10 will be described.

<Adhesive tape>
FIG. 4 is a vertical cross-sectional view showing an embodiment of the adhesive tape. In the following description, the upper side in FIG. 4 is referred to as "upper" and the lower side is referred to as "lower".

In the present invention, the adhesive tape 100 is composed of a laminated body including a base material 4 and an adhesive layer 2 laminated on the upper surface (one surface) of the base material 4, and the semiconductor substrate 7 is temporarily fixed and used. As described above, the base material 4 contains a polyolefin resin, the size of the base material 4 before elongation is 100%, and the size of the base material 4 is 150% in the plane direction at 60 ° C. It does not have a yield point when it is extended to.

Here, when the base material 4 is stretched to a size of 150% in the plane direction at 60 ° C., the fact that the base material 4 does not have a yield point means that the base material 4 has 150% in the plane direction at 60 ° C. It is shown that the base material 4 does not undergo plastic deformation even when it is stretched to a size. Therefore, in this step [4A], as shown in FIG. 2D, when the adhesive tape 100 is stretched radially using the dicer table 200, the base material 4 is accurately suppressed or prevented from being plastically deformed. be able to. Therefore, a gap having a sufficient size can be formed between the adjacent semiconductor chips 20.

Therefore, when the semiconductor chip 20 is picked up in a state where the semiconductor chip 20 is pushed up by the needle while forming a gap between the adjacent semiconductor chips 20, the semiconductor chip 20 is pushed up stably by the needle. Therefore, the pickup of the semiconductor chip 20 can be carried out with excellent accuracy.

Hereinafter, the base material 4 and the adhesive layer 2 included in such an adhesive tape 100 (dicing tape) will be described in detail.

<Base material 4>
The base material 4 mainly contains a polyolefin-based resin and has a function of supporting the adhesive layer 2 provided on the base material 4. Further, it is for realizing radial stretching of the adhesive tape 100 using the dicer table 200 in the step [4A], that is, stretching of the adhesive tape 100 in the plane direction. As described above, in the present invention, before stretching. When the size of the base material 4 is 100% and the base material 4 is stretched to a size of 150% in the plane direction at 60 ° C., it does not have a yield point.

The polyolefin-based resin is not particularly limited as long as it does not have a yield point when the base material 4 is stretched to a size of 150% in the plane direction at 60 ° C., but for example, a linear low density resin. Polyethylene resins such as density polyethylene, low density polyethylene, ultra-low density polyethylene, ethylene-vinyl acetate copolymer (EVA), ethylene-methylmethacrylate copolymer (EMMA), ethylene-methacrylate copolymer (EMAA) and , Zinc ion cross-linked product, sodium ion cross-linked product, ethylene copolymer such as ethylene-based ionomer as potassium ion cross-linked product, etc., and one or more of these may be used in combination. Can be done. Among these, ionomer having a specific gravity of 0.94 g / cm ³ or more and 0.96 g / cm ³ or less, or low-density polyethylene or ultra-low-density polyethylene ^{having a specific gravity of 0.92 g / cm 3 or less is particularly preferable.} As a result, when the base material 4 is stretched to a size of 150% in the plane direction at 60 ° C., it can be surely not having a yield point.

Further, the base material 4 preferably contains a conductive material having conductivity. By including such a conductive material, the conductive material can exert a function as an antistatic agent, and the semiconductor chip 20 in the individualization step [3A] and the pickup step [4A] can be used. It is possible to accurately suppress or prevent the generation of static electricity.

The conductive material is not particularly limited as long as it has conductivity, and examples thereof include a surfactant, a permanent antistatic polymer (IDP), a metal material, a metal oxide material, and a carbon-based material. And one or a combination of two or more of these can be used.

Among these, examples of the surfactant include anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants.

As the permanent antistatic polymer (IDP), for example, all IDPs such as a polyether and a polyolefin block polymer series, a polyester amide series, a polyester amide, a polyether ester amide, and a polyurethane series can be used.

Examples of the metal material include gold, silver, copper, silver-coated copper, nickel and the like, and these metal powders are preferably used.

Examples of the metal oxide material include indium oxide (ITO), indium oxide (IO), antimontine oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO ₂ ), zinc oxide (ZnO), and the like. These metal oxide powders are preferably used.

Further, examples of the carbon-based material include carbon black, single-walled carbon nanotubes, carbon nanotubes such as multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, graphene and the like.

Among these, the conductive material is preferably at least one of a surfactant, a permanent antistatic polymer (IDP), a metal oxide material, and carbon black. Since these materials have a small temperature dependence of resistivity, even if the base material 4 is heated when dicing the semiconductor substrate 7 in the step [3A], the surface resistance value of these materials is high. The amount of change can be reduced.

Further, the base material 4 includes a softening agent such as mineral oil, a filler such as calcium carbonate, silica, talc, mica, and clay, an antioxidant, a light stabilizer, a lubricant, a dispersant, a neutralizing agent, a coloring agent, and the like. May be contained.

The thickness of the base material 4 is, for example, preferably 30 μm or more and 160 μm or less, and more preferably 80 μm or more and 120 μm or less. When the thickness of the base material 4 is within this range, the function as the base material 4 is more reliably exhibited, and the dicing of the semiconductor substrate 7 in the step [3A] and the semiconductor chip 20 in the step [4A] The pickup can be carried out with excellent workability.

Further, it is preferable that the surface of the base material 4 is exposed with functional groups such as hydroxyl groups and amino groups that are reactive with the constituent materials contained in the adhesive layer 2.

Further, the base material 4 may be composed of a laminated body (multilayer body) in which a plurality of layers made of different resin materials are laminated.

As described above, the base material 4 as described above has a yield point when the size of the base material 4 before stretching is 100% and the base material 4 is stretched to a size of 150% in the plane direction at 60 ° C. However, the tangential elastic modulus representing the inclination of the straight part in the stress-strain curve measured when the base material is stretched to a size of 150% in the plane direction at 60 ° C. It is preferably 0 MPa or more and 500 MPa or less, and more preferably 0 MPa or more and 300 MPa or less. By satisfying that the magnitude of the tangential elastic modulus is within the above range, the base material 4 does not undergo plastic deformation even if it is stretched to a magnitude of 150% in the plane direction at 60 ° C. It can be said that it extends more linearly. Therefore, in this step [4A], as shown in FIG. 2D, when the adhesive tape 100 is radially stretched using the dicer table 200, a sufficiently large gap is provided between the adjacent semiconductor chips 20. Can be formed.

Further, when the adhesive tape 100 is stretched radially, the gap formed between the adjacent semiconductor chips 20 is preferably the size (width) as shown below. That is, the silicon substrate is fixed to the adhesive tape 100, and then, using a blade having a thickness of 30 μm, the silicon substrate is cut in the thickness direction until it reaches the middle of the base material 4, and the silicon substrate is separated into individual pieces to have a length of 4 mm. × After obtaining a silicon chip having a width of 4 mm, when the base material 4 is stretched to a size of 120% in the plane direction of the base material 4 at 60 ° C., the adjacent silicon chips have opposite sides. The width of the gap formed between them is preferably 200 μm or more, and more preferably 250 μm or more and 1000 μm or less. As shown in FIG. 2D, the width of the gap formed when the silicon chip having a size of 4 mm in length × 4 mm in width is provided on the silicon substrate as described above is within the above range. When a gap is formed between the semiconductor chips 20 to be formed, it can be said that a gap having a sufficient size is formed, and the pickup of the semiconductor chip 20 can be carried out with excellent accuracy.

It should be noted that the reason why the pickability of the semiconductor chip 20 is lowered when a sufficiently large gap is not formed is that when a sufficiently large gap is not formed, the semiconductor chip 20 is picked up for the purpose. This is because not only the semiconductor chip 20 but also the semiconductor chip 20 located in the periphery is partially peeled off from the adhesive tape 100, and as a result, the position of the semiconductor chip 20 is displaced. If such a misalignment occurs, when picking up the misaligned semiconductor chip 20, the position of the needle that pushes up the semiconductor chip 20 does not match, and as a result, a pickup error of the semiconductor chip 20 occurs or the semiconductor chip 20 is adjacent to the semiconductor chip 20. There is a problem that the semiconductor chip 20 may interfere with the semiconductor chip 20 to damage the semiconductor chip 20.

On the other hand, in the present invention, it can be said that a gap having a sufficient size is formed between the semiconductor chips 20, and the semiconductor chips 20 can be picked up with excellent accuracy. The point can be surely eliminated.

<Adhesive layer>
The adhesive layer 2 adheres to and supports the semiconductor substrate 7 when dicing the semiconductor substrate 7 in the step [3A], and applies energy to the adhesive layer 2 to adhere to the adhesive layer 2 in the step [4A]. When the layer 2 is cured, it has enough adhesiveness to pick up the semiconductor chip 20 obtained by separating the semiconductor substrate 7 into individual pieces.

The adhesive layer 2 having such a function is composed of a resin composition containing (1) a base resin having adhesiveness and (2) a curable resin that cures the adhesive layer 2 as a main material.

Hereinafter, each component contained in this resin composition will be described in detail in order.
(1) Base Resin The base resin has adhesiveness and is contained in the resin composition in order to impart adhesiveness to the semiconductor substrate 7 to the adhesive layer 2.

Examples of such a base resin include acrylic resin (adhesive), silicone resin (adhesive), polyester resin (adhesive), polyvinyl acetate resin (adhesive), and polyvinyl ether resin (adhesive). , Styrene-based elastomer resin (adhesive), polyisoprene-based resin (adhesive), polyisobutylene-based resin (adhesive) or urethane-based resin (adhesive), which are known as adhesive layer components. However, among them, it is preferable to use an acrylic resin. Acrylic resins are preferably used as base resins because they have excellent heat resistance and can be obtained relatively easily and at low cost.

Acrylic resin refers to a polymer (homopolymer or copolymer) containing (meth) acrylic acid ester as a monomer main component as a base polymer.

The (meth) acrylic acid ester is not particularly limited, and for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, butyl (meth) acrylate. , (Meta) isobutyl acrylate, (meth) s-butyl acrylate, (meth) t-butyl acrylate, (meth) pentyl acrylate, (meth) hexyl acrylate, (meth) heptyl acrylate, (meth) Octyl acrylate, Isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, Nonyl (meth) acrylate, Isononyl (meth) acrylate, Decyl (meth) acrylate, Isodecyl (meth) acrylate, (meth) ) Undecyl acrylate, dodecyl (meth) acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, (meth) (Meta) acrylic acid alkyl esters such as octadecyl acrylate, (meth) acrylic acid cycloalkyl esters such as (meth) acrylic acid cyclohexyl, (meth) acrylic acid aryl esters such as (meth) phenyl acrylate, etc. These can be mentioned, and one or a combination of two or more of these can be used. Among these, (meth) acrylate alkyl esters such as methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and octyl (meth) acrylate. Is preferable. The (meth) acrylic acid alkyl ester is particularly excellent in heat resistance, and can be obtained relatively easily and inexpensively.

In addition, in this specification, (meth) acrylic acid ester is used in the meaning which includes both acrylic acid ester and methacrylic acid ester.

As the acrylic resin, a resin containing a copolymerizable monomer is used as a monomer component constituting the polymer, if necessary, for the purpose of modifying the cohesive force, heat resistance and the like.

Such a copolymerizable monomer is not particularly limited, and is, for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, (meth). Like hydroxyl group-containing monomers such as 6-hydroxyhexyl acrylate, epoxy group-containing monomers such as glycidyl (meth) acrylate, (meth) acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, isocrotonic acid. Carboxyl group-containing monomers, acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride, (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol ( Amido-based monomers such as meta) acrylamide, N-methylolpropane (meth) acrylamide, N-methoxymethyl (meth) acrylamide, N-butoxymethyl (meth) acrylamide, aminoethyl (meth) acrylate, (meth) acrylic acid Amino group-containing monomers such as N, N-dimethylaminoethyl, t-butylaminoethyl (meth) acrylate, cyano group-containing monomers such as (meth) acrylonitrile, ethylene, propylene, isoprene, butadiene, isobutylene and the like. Olefin-based monomers, styrene, α-methylstyrene, styrene-based monomers such as vinyl toluene, vinyl ester-based monomers such as vinyl acetate and vinyl propionate, vinyl ether-based monomers such as methyl vinyl ether and ethyl vinyl ether, vinyl chloride, chloride Halogen atom-containing monomers such as vinylidene, methoxyethyl (meth) acrylate, alkoxy group-containing monomers such as ethoxyethyl (meth) acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine , N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazin, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholin, N-vinylcaprolactam, N- (meth) Examples thereof include monomers having a nitrogen atom-containing ring such as acryloylmorpholin, and one or a combination of two or more of these can be used.

The content of these copolymerizable monomers is preferably 40% by weight or less, more preferably 10% by weight or less, based on all the monomer components constituting the acrylic resin.

Further, the copolymerizable monomer may be contained at the end of the main chain in the polymer constituting the acrylic resin, contained in the main chain, and further, the end of the main chain and the main chain. It may be included in both the inside and the inside.

Further, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of cross-linking between polymers.

Examples of the polyfunctional monomer include 1,6-hexanediol (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, and neopentyl glycol di (meth) acrylate. , Pentaerythritol di (meth) acrylate, trimethylolpropanthry (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, glycerindi (meth) acrylate, epoxy (meth) acrylate, polyester ( Examples thereof include meta) acrylate, urethane (meth) acrylate, divinylbenzene, butyldi (meth) acrylate, and hexyldi (meth) acrylate, and one or more of these can be used in combination.

Further, ethylene-vinyl acetate copolymer, vinyl acetate polymer and the like can also be used as the copolymerizable monomer component.

Such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more kinds of monomer components. Further, the polymerization of these monomer components can be carried out by using a polymerization method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, or a suspension polymerization method.

The acrylic resin has a low content of low molecular weight substances from the viewpoint of preventing contamination of the semiconductor substrate 7 and the like by the acrylic resin when dicing the semiconductor substrate 7 in the step [3A]. Is preferable. In this case, the weight average molecular weight of the acrylic resin is preferably set to 300,000 to 5,000,000, more preferably 500,000 to 5,000,000, and even more preferably 800,000 to 3,000,000. If the weight average molecular weight of the acrylic resin is less than 500,000 depending on the type of monomer component and the like, the antifouling property on the semiconductor substrate 7 and the like is lowered, and as a result, when the semiconductor chip 20 is peeled off, Adhesive residue may occur.

The acrylic resin has a functional group (reactive functional group) that is reactive with a cross-linking agent or a photopolymerization initiator, such as a hydroxyl group or a carboxyl group (particularly, a hydroxyl group). Is preferable. As a result, since the cross-linking agent and the photopolymerization initiator are linked to the acrylic resin which is a polymer component, it is possible to accurately suppress or prevent the leakage of these cross-linking agents and the photopolymerization initiator from the adhesive layer 2. As a result, the adhesiveness of the adhesive layer 2 to the semiconductor substrate 7 is surely reduced by the energy ray irradiation in the step [4A].

(2) Curable Tree The curable resin has, for example, curability that is cured by irradiation with energy rays. As a result of the base resin being incorporated into the crosslinked structure of the curable resin by this curing, the adhesive strength of the adhesive layer 2 is reduced.

Such a curable resin has, for example, a low molecular weight having at least two or more polymerizable carbon-carbon double bonds as functional groups that can be three-dimensionally crosslinked by irradiation with energy rays such as ultraviolet rays and electron beams. Compounds are used. Specifically, for example, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, tetraethylene glycol di (meth) acrylate, 1,6-Hexanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, 1,4-butylene glycol di (meth) acrylate ) Acrylate, esterified product of (meth) acrylic acid and polyhydric alcohol such as polyethylene glycol di (meth) acrylate, glycerin di (meth) acrylate, ester acrylate oligomer, 2-propenyl-di-3-butenyl cyanurate Cyanurate compounds having a carbon-carbon double bond-containing group such as tris (2-acryloxyethyl) isocyanurate, tris (2-methacryloxyethyl) isocyanurate, 2-hydroxyethyl bis (2-acrylate). Loxyethyl) isocyanurate, bis (2-acryloxyethyl) 2-[(5-acryloxyhexyl) -oxy] ethyl isocyanurate, tris (1,3-diacryloxy-2-propyl-oxycarbonylamino-n-hexyl) ) Isocyanurate, tris (1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl) isocyanurate, tris (4-acryloxy-n-butyl) isocyanurate, etc. Examples thereof include isocyanurate-based compounds having a heavy bond-containing group, commercially available oligoester acrylates, aromatic-based and aliphatic-based urethane acrylates, and bisphenol A-based epoxy acrylates. Two or more types can be used in combination. Among these, it is preferable to include an oligomer having a functional group number of 6 or more, and more preferably to include an oligomer having a functional group number of 15 or more. As a result, the curable resin can be cured more reliably by irradiating with energy rays. Further, such a curable resin is preferably urethane acrylate. This makes it possible to impart appropriate flexibility to the adhesive layer 2. Therefore, when the semiconductor chip 20 is pushed up at the time of pickup, it is possible to accurately suppress or prevent the occurrence of glue cracks in the adhesive layer 2.

The urethane acrylate is not particularly limited, but for example, a polyol compound such as a polyester type or a polyether type and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene). The terminal isocyanate urethane prepolymer obtained by reacting isocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc. has a hydroxyl group (isocyanate). Examples thereof include those obtained by reacting a meta) acrylate (for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, polyethylene glycol (meth) acrylate, etc.).

The curable resin is not particularly limited, but it is preferable that two or more curable resins having different weight average molecular weights are mixed. By using such a curable resin, the degree of cross-linking of the resin by energy ray irradiation can be easily controlled, and the pick-up property of the semiconductor chip main body 23 (semiconductor chip 20) in the step [5A] is improved. be able to. Further, as such a curable resin, for example, a mixture of a first curable resin and a second curable resin having a weight average molecular weight larger than that of the first curable resin may be used.

When the curable resin is a mixture of the first curable resin and the second curable resin, the weight average molecular weight of the first curable resin is preferably about 100 to 1000, preferably about 200 to 200. It is more preferably about 500. The weight average molecular weight of the second curable resin is preferably about 1000 to 30,000, more preferably about 1000 to 10000, and even more preferably about 2000 to 5000. Further, the number of functional groups of the first curable resin is preferably 1 to 5, and the number of functional groups of the second curable resin is preferably 6 or more. By satisfying such a relationship, the above-mentioned effect can be exerted more remarkably.

The curable resin is preferably blended in an amount of 50 parts by weight or more and 200 parts by weight or less, and more preferably 100 parts by weight or more and 180 parts by weight or less with respect to 100 parts by weight of the base resin. Thereby, the functions exhibited by adding the curable resin and the base resin to the resin composition can be surely exhibited in both the curable resin and the base resin.

In this curable resin, when a double bond-introduced acrylic resin is used as the above-mentioned acrylic resin, that is, a carbon-carbon double bond is formed in the side chain, in the main chain, or at the end of the main chain. When a possessed material is used, its addition to the resin composition may be omitted. This is because, when the acrylic resin is a double bond-introduced acrylic resin, the pressure-sensitive adhesive layer 2 is provided by the carbon-carbon double bond function of the double-bond-introduced acrylic resin by irradiation with energy rays. Hardens, which reduces the adhesive strength of the adhesive layer 2.

(3) Photopolymerization Initiator The adhesive layer 2 is deteriorated in adhesiveness to the semiconductor substrate 7 by irradiation with energy rays. However, when ultraviolet rays or the like are used as the energy rays, the curable resin may be used. It is preferable to contain a photopolymerization initiator in order to facilitate the initiation of polymerization of the curable resin.

Examples of the photopolymerization initiator include 2,2-dimethoxy-1,2-diphenylethane-1-one and 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1. -Propane-1-one, 2-hydroxy-1-{4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl} -2-methyl-propane-1-one, benzyldiphenylsulfide, Tetramethylthium monosulfide, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1 -Hydroxycyclohexylphenylketone, Michelers ketone, acetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2- Morphorinopropane-1, benzoinmethyl ether, benzoin ethyl ether, benzoinpropyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, dibenzyl, α-hydroxycyclohexylphenylketone, benzyldimethylketal, 2-hydroxymethylphenylpropane, 2 -Naphthalenesulfonyl chloride, 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime, benzophenone, benzoylbenzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4 , 4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acrylicoxybenzophenone, p-acrylicoxybenzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p- (meth) acrylicoxy Benzophenone-4-carboxylic acid esters of acrylates such as ethoxybenzophenone, 1,4-butanediol mono (meth) acrylate, 1,2-ethanediol mono (meth) acrylate, 1,8-octanediol mono (meth) acrylate. , Thioxanson, 2-Chlorothioxanson, 2-Methylthioxanson, 2,4-dimethylthioxanson, Isopropylthioxanson, 2,4-dichlorothioxanson, 2,4-diethylthioxan Son, 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloranthraquinone, camphorquinone, halogenated ketone, acylphosphinoxide, acylphosphonate, polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, Examples thereof include dimethylthioxanthone, diethylthioxanthone, 2-ethylanthraquinone, t-butylanthraquinone, 2,4,5-triarylimidazole dimer, and one or more of these can be used in combination. can.

Among these, benzophenone derivatives and alkylphenone derivatives are preferable. These compounds have a hydroxyl group as a reactive functional group in the molecule, and can be linked to a base resin or a curable resin via the reactive functional group, so that the function as a photopolymerization initiator can be further enhanced. It can be surely demonstrated.

The photopolymerization initiator is preferably blended in an amount of 0.1 parts by weight or more and 50 parts by weight or less, and more preferably 0.5 parts by weight or more and 10 parts by weight or less with respect to 100 parts by weight of the base resin. .. By adjusting the blending amount of the photopolymerization initiator as described above, the function exhibited by adding the photopolymerization initiator to the resin composition can be surely exhibited in the photopolymerization initiator. ..

(4) Cross-linking agent Further, the curable resin may contain a cross-linking agent. By including the cross-linking agent, the curability of the curable resin can be improved.

The cross-linking agent is not particularly limited, but for example, an isocyanate-based cross-linking agent, an epoxy-based cross-linking agent, a urea resin-based cross-linking agent, a methylol-based cross-linking agent, a chelate-based cross-linking agent, an aziridine-based cross-linking agent, a melamine-based cross-linking agent, and a multivalent cross-linking agent. Examples thereof include metal chelate-based cross-linking agents, acid anhydride-based cross-linking agents, polyamine-based cross-linking agents, and carboxyl group-containing polymer-based cross-linking agents. Of these, isocyanate-based cross-linking agents are preferable.

The isocyanate-based cross-linking agent is not particularly limited, but is, for example, a trimeric of a polyisocyanate compound and a polyisocyanate compound of polyisocyanate, or a trimeric of a terminal isocyanate compound obtained by reacting a polyisocyanate compound with a polyol compound. Alternatively, a blocked polyisocyanate compound or the like in which a terminal isocyanate urethane prepolymer is sealed with phenol, oximes or the like can be mentioned.

Further, as polyvalent isocyanate, for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane -2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenylether diisocyanate, 4 , 4'-[2,2-bis (4-phenoxyphenyl) propane] diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate and the like, and one or a combination of two or more of these is used. be able to. Among these, at least one polyvalent isocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate and hexamethylene diisocyanate is preferable.

The cross-linking agent is preferably blended in an amount of 0.01 parts by weight or more and 50 parts by weight or less with respect to 100 parts by weight of the base resin, and more preferably 5 parts by weight or more and 50 parts by weight or less. By adjusting the blending amount of the cross-linking agent as described above, it is possible to ensure that the cross-linking agent exerts the function exhibited by adding the cross-linking agent to the resin composition.

(5) Other components Further, in the resin composition constituting the pressure-sensitive adhesive layer 2, in addition to the above-mentioned components (1) to (4), as other components, a conductive material, a pressure-imparting agent, and an anti-aging agent , Adhesive modifier, filler, colorant, flame retardant, softener, antioxidant, plasticizer, surfactant and the like.

Of these, the conductive material is not particularly limited as long as it has conductivity, but the same material as described as the conductive material contained in the base material 4 can be used.

By including such a conductive material, the conductive material can exert a function as an antistatic agent, and the semiconductor chip 20 in the individualization step [3A] and the pickup step [4A] can be used. The generation of static electricity is accurately suppressed or prevented.

When one of the base material 4 and the adhesive layer 2 contains the conductive material, it is preferable that the base material 4 contains the conductive material. Thereby, the generation of static electricity in the semiconductor chip 20 can be more accurately suppressed or prevented without surely adhering the conductive material to the semiconductor chip 20.

The tackifier is not particularly limited, and for example, rosin resin, terpene resin, kumaron resin, phenol resin, aliphatic petroleum resin, aromatic petroleum resin, and aliphatic aromatic copolymerized petroleum. Examples thereof include resins, and one or a combination of two or more of these can be used.

The thickness of the adhesive layer 2 is not particularly limited, but is preferably 5 μm or more and 50 μm or less, and more preferably 5 μm or more and 10 μm or less. By setting the thickness of the adhesive layer 2 within such a range, the adhesive layer 2 exhibits good adhesive force to the semiconductor substrate 7 in the individualization step [3A], and the pickup step [4A]. In the above, the adhesive layer 2 and the semiconductor substrate 7 can be provided with adhesiveness to the extent that good peelability is exhibited.

Further, the adhesive layer 2 preferably has a storage elastic modulus of 1.0x10 ^ 8Pa or more and 1.0x10 ^ 10Pa or less at 25 ° C. after curing the adhesive layer 2 (after curing), preferably 5.0x10 ^ 8Pa. It is more preferably less than 5.0x10 ^ 9Pa. As a result, in the pickup step [4A], when the semiconductor chip 20 is pushed up, the adhesive layer 2 exerts a function as a cushion layer, so that the adhesive layer 2 is accurately suppressed or prevented from being cracked. be able to.

The adhesive layer 2 may be composed of a laminated body (multilayer body) in which a plurality of layers composed of different resin compositions are laminated.

Next, the adhesive tape 100 having such a configuration can be manufactured as follows, for example.

<Manufacturing method of adhesive tape>
FIG. 5 is a vertical cross-sectional view for explaining a method of manufacturing the adhesive tape shown in FIG. In the following description, the upper side in FIG. 5 is referred to as "upper" and the lower side is referred to as "lower".

[1B] First, the base material 4 is prepared (see FIG. 5A).
The method for producing the base material 4 is not particularly limited, and examples thereof include general molding methods such as a calendar method, an inflation extrusion method, an extrusion molding method such as a T-die extrusion method, and a wet casting method. When the base material 4 is composed of a laminated body, as a method for producing the base material 4 having such a structure, for example, a molding method such as a coextrusion method or a dry laminating method is used.

Further, the base material 4 can be used without stretching, and if necessary, a uniaxial or biaxial stretching treatment may be used.

[2B] Next, the adhesive layer 2 is formed on the upper surface of the base material 4 (see FIG. 5B).
The surface (upper surface) of the base material 4 is subjected to corona treatment, chromic acid treatment, mat treatment, ozone exposure treatment, flame exposure treatment, and high-voltage impact for the purpose of improving the adhesion between the base material 4 and the adhesive layer 2. Surface treatments such as exposure treatment, ionizing radiation treatment, primer treatment, and anchor coating treatment may be applied.

Further, the adhesive layer 2 is adhered by applying or spraying a liquid material in which the resin composition which is the constituent material of the adhesive layer 2 is dissolved in a solvent to form a varnish on the base material 4, and then volatilizing the solvent. It can be obtained by forming the layer 2.

The solvent is not particularly limited, and examples thereof include methyl ethyl ketone, acetone, toluene, ethyl acetate, and dimethyl formaldehyde, and one or a combination of two or more of these can be used.

Further, the liquid material can be applied or sprayed on the base material 4 by using a method such as die coating, curtain die coating, gravure coating, comma coating, bar coating and lip coating.

[3B] Next, with respect to the adhesive layer 2 formed on the base material 4, the base material 4 is left in the thickness direction of the adhesive layer 2 so as to separate the center side and the outer peripheral side into a circle. By removing a part of the adhesive layer 2 in an annular shape, the adhesive layer 2 is provided with a central portion 122 and an outer peripheral portion 121 (see FIG. 5C).

Examples of the method of removing a part of the adhesive layer 2 in an annular shape include a method of punching the adhesive layer 2 so as to surround the area to be removed and then removing the adhesive layer 2 located in the punched area.

Further, the punching of the region to be removed can be performed by using, for example, a method using a roll die or a method using a press die. Above all, a method using a roll-shaped mold capable of continuously producing the adhesive tape 100 is preferable.

In this step, a part of the adhesive layer 2 is punched out in a ring shape (circular shape) to form the central portion 122 and the outer peripheral portion 121, but the shape of punching out a part of the adhesive layer 2 is the above-mentioned semiconductor device. In the manufacturing method of the above, any shape may be used as long as the outer peripheral portion 121 of the adhesive layer 2 can be fixed by a wafer ring. Specifically, as the punching shape, for example, in addition to the above-mentioned circular shape, an elliptical shape such as an ellipse or a bale shape, a polygonal shape such as a quadrangular shape or a pentagonal shape, or the like can be mentioned.

[4B] Next, by laminating the separator 1 on the adhesive layer 2 formed on the base material 4, an adhesive tape 100 in which the adhesive layer 2 is coated with the separator 1 is obtained (FIG. 5 (d)). reference.).

The method of laminating the separator 1 on the adhesive layer 2 is not particularly limited, and for example, a laminating method using a roll or a laminating method using a press can be used. Among these, the laminating method using a roll is preferable from the viewpoint of productivity that continuous production can be performed.

The separator 1 is not particularly limited, and examples thereof include a polypropylene film, a polyethylene film, and a polyethylene terephthalate film.

Further, as the separator 1, since the adhesive tape 100 is peeled off when it is used, a separator whose surface has been released may be used. Examples of the mold release treatment include a treatment of coating the surface of the separator 1 with a release agent, a treatment of making fine irregularities on the surface of the separator 1 and the like. Examples of the release agent include silicone-based, alkyd-based, and fluorine-based ones.

Through the above steps, the adhesive tape 100 coated with the separator 1 can be formed.

The adhesive tape 100 coated with the separator 1 manufactured in the present embodiment is used after the adhesive tape 100 is peeled from the separator 1 in the method for manufacturing a semiconductor device using the adhesive tape 100 described above.

Further, when peeling the separator 1 from the adhesive layer 2 covered by the separator 1, it is preferable to peel the separator 1 from the surface of the adhesive layer 2 at an angle of 90 ° or more and 180 ° or less. By setting the angle at which the separator 1 is peeled off within the above range, it is possible to reliably prevent the peeling at points other than the interface between the adhesive layer 2 and the separator 1.

Although the adhesive tape of the present invention has been described above, the present invention is not limited thereto.

For example, any component capable of exhibiting the same function may be added to each layer of the adhesive tape of the present invention, or the base material may be one layer as described in the above-described embodiment. In addition to the structure, the layer may be composed of a plurality of layers. For example, an antistatic layer may be provided on the surface of the base material opposite to the adhesive layer described above.

Further, the structure of each layer included in the adhesive tape can be replaced with an arbitrary structure capable of exhibiting the same function, or a structure having an arbitrary structure can be added.

Further, depending on the configuration of the semiconductor device formed by using the adhesive tape, the formation of the mold portion 17 included in the semiconductor device 10 may be omitted.

Further, not only when a semiconductor chip is obtained as a cut piece by dicing a semiconductor substrate to which an adhesive tape is attached, a sufficiently large gap is formed between adjacent parts by expanding radially. The adhesive tape of the present invention can also be applied to substrate processing applications where there is a need. As the substrate to be attached by the adhesive tape of the present invention, in addition to the above-mentioned semiconductor substrate (semiconductor wafer), for example, glass substrates such as soda lime glass, borosilicate glass, and quartz glass, alumina, silicon nitride, and titanium oxide. Examples thereof include ceramic substrates such as, resin material substrates such as acrylic, polycarbonate, and rubber, and metal material substrates.

<Base material for adhesive tape>
The base material for an adhesive tape of the present invention is a base material 4 constituting the pressure-sensitive adhesive tape 100 of FIG. 4, and is used in combination with an adhesive layer 2 laminated on one surface of the base material 4.

The base material 4 contains a polyolefin resin and has a yield point when the size of the base material before elongation is 100% and the base material 4 is extended to a size of 150% in the plane direction at 60 ° C. It is characterized by not doing so.

As described above, when the base material 4 is stretched to a size of 150% in the plane direction at 60 ° C., the base material 4 does not have a yield point. Therefore, in the step [4A], the dicer table 200 is used. When the adhesive tape 100 is stretched radially, the base material 4 can be accurately suppressed or prevented from being plastically deformed. Therefore, a gap having a sufficient size can be formed between the adjacent semiconductor chips 20. Therefore, when the semiconductor chip 20 is picked up in a state where the semiconductor chip 20 is pushed up by the needle while forming a gap between the adjacent semiconductor chips 20, the semiconductor chip 20 is pushed up stably by the needle. Therefore, the pickup of the semiconductor chip 20 can be carried out with excellent accuracy.

As the resin material, manufacturing method, etc. of the base material for the adhesive tape of the present invention, the same material as that of the base material 4 can be used, and the above description shall be applied mutatis mutandis.

Next, specific examples of the present invention will be described.
The present invention is not limited to the description of these examples.

1. 1. Preparation of raw materials First, the raw materials used for producing the adhesive tapes of each example and each comparative example are shown below.

(Polyolefin-based resins 1 to 7)
The following polyolefin resins 1 to 7 were prepared.
Polyolefin resin 1:
Ultra-low density polyethylene (ultra-low density, manufactured by Tosoh, product number LUMITAC 12-1,
Specific gravity: 0.90 g / cm ³ )
Polyolefin resin 2:
Low density polyethylene (low density, manufactured by Sumitomo Chemical Co., Ltd., product number Sumikasen F200-0,
Specific gravity: 0.92 g / cm ³ )
Polyolefin resin 3:
Ionomer (Na ⁺ crosslinked product, manufactured by Mitsui / DuPont Polychemical Co., Ltd.,
Hymilan 1601, specific gravity: 0.94 g / cm ³ )
Polyolefin resin 4:
Ionomer (Zn ²⁺ crosslinked product, manufactured by Mitsui / DuPont Polychemical Co., Ltd.,
High Milan 1650, specific gravity: 0.95 g / cm ³ )
Polyolefin resin 5:
Ionomer (Zn ²⁺ crosslinked product, manufactured by Mitsui / DuPont Polychemical Co., Ltd.,
Hymilan 1706, specific gravity: 0.96 g / cm ³ )
Polyolefin resin 6:
Styrene-based elastomer (hydrogenated SIS, manufactured by Kuraray)
Hybler 7175, specific density: 0.7 g / cm ³ )
Polyolefin resin 7:
Polypropylene (PP, manufactured by Sumitomo Chemical Co., Ltd.,
FS2011DG-2, specific density: 2.0 g / cm ³ )

(Base resin 1)
As the base resin 1, at least two of butyl acrylate, acrylic acid, butyl methacrylate, 2-ethylhexyl acrylate, and N, N-dimethylacrylamide are mixed and solution-polymerized in a toluene solvent by a conventional method. The acrylic copolymer was prepared.

The glass transition point and the weight average molecular weight of the base resin (acrylic copolymer) 1 were as shown below.
Base resin 1 (glass transition point: -14 ° C, weight average molecular weight: 500,000)

(Curable resin 1)
As the curable resin 1, a urethane acrylate (manufactured by Miwon Specialty Chemical Co., Ltd., product number: Miramer SC2152), which is a 15-functional oligomer, was prepared.

(Crosslinking agent 1)
As the cross-linking agent 1, polyisocyanate (manufactured by Nippon Polyurethane Industry Co., Ltd., product number: Coronate L) was prepared.

(Photopolymerization Initiator 1)
As the photopolymerization initiator 1, benzyl dimethyl ketal (manufactured by Ciba Specialty Chemicals, product number: Irgacure 651) was prepared.

2. Preparation of Adhesive Tape [Example 1]
The polyolefin resin 1 was extruded with an extruder to prepare a base material 4 having a thickness of 100 μm.

Next, the base resin 1 (100 parts by weight), the curable resin 1 (85 parts by weight with respect to 100 parts by weight of the base resin), the cross-linking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin) and photopolymerization are started. A liquid material containing a resin composition containing Agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) was prepared. This liquid material is bar-coated on the base material 4 so that the thickness of the adhesive layer 2 after drying is 20 μm, and then dried at 80 ° C. for 1 minute to obtain the upper surface (one surface) of the base material 4. ) Was formed with the adhesive layer 2.

[Examples 2 to 5, Comparative Examples 1 to 3]
An adhesive tape was produced in the same manner as in Example 1 above, except that the polyolefin resin used in producing the base material 4 was as shown in Table 1.

3. 3. Evaluation The adhesive tapes of the obtained Examples and Comparative Examples were evaluated by the following methods.

3-1. Confirmation of the presence or absence of a yield point and calculation of the tangential elastic modulus With respect to the base material 4 included in the adhesive tape 100 of each Example and each Comparative Example, the polyolefin-based resin shown in Table 1 was extruded by an extruder to obtain a thickness. A product having a size of 80 μm was prepared.

Then, for each of the produced base materials 4, a stress-strain curve (temperature 60 ° C., tensile speed 200 mm / min) was obtained using a tensile test device (“Tencilon RTC-1250” manufactured by A & D Co., Ltd.). The tangential elastic modulus [MPa] was calculated while confirming the presence or absence of a yield point when the base material 4 was obtained and stretched to a size of 150% with the size of the base material 4 before stretching as 100%.

3-2. Measurement of gap width during expansion Prepare a silicon substrate (made by SUMCO, 650 μm) made of silicon, obtain this silicon substrate with a thickness of 230 μm with a # 320 wheel, and then obtain a silicon substrate with a thickness of 200 μm. The adhesive tape 100 of each example and each comparative example was fixed to the ground surface after grinding with the # 2000 wheel with the adhesive layer 2 on the silicon substrate side. After that, the silicon substrate is cut into pieces using a blade having a thickness of 30 μm until it reaches the middle of the base material 4 in the thickness direction, thereby forming a plurality of silicon chips having a size of 4 mm in length × 4 mm in width. Got

Next, when the adhesive tape 100 is radially stretched to a size of 120% in the plane direction of the base material 4 at 60 ° C., the gaps formed between the opposite sides of the adjacent silicon chips are formed. The width was measured.

3-3. Evaluation of pickability of silicon chip A silicon substrate (manufactured by SUMCO Corporation) composed of silicon is prepared and ground by a conventional method to obtain this silicon substrate with a thickness of 230 μm. The adhesive tape 100 of each example and each comparative example was fixed to the ground surface after grinding with the adhesive layer 2 on the silicon substrate side. Then, the silicon substrate is cut in the thickness direction until it reaches the middle of the base material 4 and separated into individual pieces to obtain a plurality of silicon chips having a size of 6 mm in length × 6 mm in width, and then the base material is used at 60 ° C. With the adhesive tape 100 stretched radially to a size of 120% in the surface direction of 4, the adhesive layer 2 was irradiated with ultraviolet rays to apply energy to cure the adhesive layer 2. ..

Next, the silicon chip was pushed up using the needle with the needle pushing amount set to 2000 [μm].

Next, the silicon chip was picked up by suction with a vacuum collet while maintaining the thrust of the silicon chip by the needle.

The above-mentioned pick-up of silicon chips by adsorption was repeated for each of 50 adhesive tapes for semiconductor wafer processing in each example and each comparative example.

Then, each of the adhesive tapes for semiconductor wafer processing of each Example and each Comparative Example was evaluated according to the following criteria based on the success or failure of pickup by adsorption of silicon chips.

⊚: About 50 silicon chips
We were able to pick up the surrounding silicon chips without peeling off. 〇: For 48 or more and less than 50 silicon chips
It was possible to pick up the surrounding silicon chips without peeling off. Δ: For 45 or more and less than 48 silicon chips
The surrounding silicon chips could be picked up without peeling. ×: For less than 45 silicon chips
Table 1 shows the evaluation results of various evaluations carried out as described above in which the surrounding silicon chips could be picked up without peeling.

As shown in Table 1, since the adhesive tape for semiconductor wafer processing of each embodiment does not have a yield point when the semiconductor wafer processing adhesive tape is stretched, the silicon chips are used during expanding. A sufficiently large gap could be formed between them, and as a result, the silicon chip could be picked up with excellent pickability.

On the other hand, the adhesive tape for processing wafers for semiconductors in each comparative example has a yield point when the adhesive tape for processing wafers for semiconductors is stretched, which is sufficient between the silicon chips during expanding. It was not possible to form a gap of a large size, which resulted in a decrease in the pick-up property of the silicon chip.

1 Separator 2 Adhesive layer 4 Base material 7 Semiconductor substrate 9 Wafer ring 10 Semiconductor device 17 Mold part 20 Semiconductor chip 21 terminal 23 Semiconductor chip body part 30 Interposer 41 terminal 70 Bump 80 Sealing layer 81 Connection part 85 Solder bump 100 Adhesive tape 121 Outer part 122 Central part 200 Dicer table 210 Central part 220 Outer part

Claims (6)

An adhesive tape comprising a base material and an adhesive layer laminated on one surface of the base material.
In a state where the substrate is brought into contact with the adhesive layer and fixed on the adhesive layer, the substrate is cut and individualized so as to reach halfway in the thickness direction of the substrate from the substrate. By forming a plurality of parts and then pulling out the parts from the opposite side of the base material while the adhesive tape is stretched in the plane direction and the parts are pushed up from the base material side. Used when separating from the adhesive layer,
The base material contains a polyolefin resin and has a yield point when the size of the base material before elongation is 100% and the base material is extended to a size of 150% in the plane direction at 60 ° C. Without
The tangential elastic modulus in the stress-strain curve measured when the base material is stretched to a size of 150% in the plane direction at 60 ° C. is 0 MPa or more and 80 MPa or less.
An adhesive tape characterized by satisfying the following requirement A.
Requirement A: The silicon substrate is fixed to the adhesive tape, and then the silicon substrate is cut into pieces by cutting the silicon substrate in the thickness direction until it reaches the middle of the base material using a blade having a thickness of 30 μm. After obtaining a silicon chip having a size of 4 mm in length and 4 mm in width, when the base material is stretched to a size of 120% in the plane direction of the base material at 60 ° C., the adjacent silicon chips face each other. The width of the gap formed between the side surfaces shall be 460 μm or more and less than 540 μm. The adhesive tape according to claim 1 , wherein the polyolefin-based resin is at least one of low-density polyethylene and an ethylene copolymer. The adhesive layer contains a base resin having adhesiveness and a curable resin that is cured by applying energy.
The adhesive tape according to claim 1 or 2 , wherein the adhesive strength is reduced by applying energy to the adhesive layer to cure the adhesive layer. The adhesive tape according to any one of claims 1 to 3 , wherein the adhesive layer has a thickness of 5 μm or more and 50 μm or less. The adhesive tape according to any one of claims 1 to 4 , wherein the base material has a thickness of 30 μm or more and 150 μm or less. A substrate for adhesive tape, a the substrate for adhesive tape to be applied to the adhesive tape and a corresponding pressure-sensitive adhesive tape base for one adhesive layer laminated on the surface of the material,
The adhesive tape is cut so that the substrate is fixed on the adhesive layer in contact with the adhesive layer so as to reach halfway from the substrate in the thickness direction of the adhesive tape base material. Then, a plurality of parts are formed by individualizing the parts, and then, while the adhesive tape is stretched in the plane direction, the parts are pushed up from the adhesive tape base material side, and the parts are adhered to the adhesive. It is used to separate from the adhesive layer by pulling it out from the opposite side of the tape substrate.
The base material for the adhesive tape contains a polyolefin resin and contains
The adhesive layer is used by laminating the adhesive layer on one surface of the adhesive tape base material, the size of the pressure-sensitive adhesive tape base material before elongation is 100%, and the pressure-sensitive adhesive tape base material is used at 60 ° C. When extended to a size of 150% in the plane direction, it has no yield point and has no yield point .
The tangential elastic modulus in the stress-strain curve measured when the adhesive tape base material is stretched to a size of 150% in the plane direction at 60 ° C. is 0 MPa or more and 80 MPa or less.
A base material for an adhesive tape, which is characterized by satisfying the following requirement A.
Requirement A: The silicon substrate is fixed to the adhesive tape, and then the silicon substrate is cut into pieces by cutting the silicon substrate in the thickness direction until it reaches the middle of the base material using a blade having a thickness of 30 μm. After obtaining a silicon chip having a size of 4 mm in length and 4 mm in width, when the base material is stretched to a size of 120% in the plane direction of the base material at 60 ° C., the adjacent silicon chips face each other. The width of the gap formed between the side surfaces shall be 460 μm or more and less than 540 μm.

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