JP6733804B1 - Adhesive tape and base material for adhesive tape - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an adhesive tape capable of appropriately suppressing or preventing static electricity from being generated on a pasted substrate, and an adhesive tape base material used for obtaining this adhesive tape. SOLUTION: The adhesive tape 100 of the present invention is formed by a laminated body including a base material 4 containing a resin material and a conductive material, and an adhesive layer 2 laminated on one surface of the base material 4. The substrate 4 has a surface resistivity of more than 1.0×10 8 (Ω/□) and a volume resistivity of 1.0×10 16 (Ω· m) or less. [Selection diagram]

Description

The present invention relates to an adhesive tape and an adhesive tape substrate that are used by temporarily fixing at least one of a substrate and a component.

The demand for higher density and higher integration of semiconductor devices has increased in response to the recent higher functionality of electronic devices and expansion to mobile applications, and large capacity and high density of IC packages have been advanced.

As a method of manufacturing these semiconductor devices, first, an adhesive tape is attached to a semiconductor substrate (semiconductor wafer) as an electronic substrate, and the periphery of the semiconductor substrate is fixed with a wafer ring while a dicing process using a dicing saw is performed. The semiconductor substrate is cut (separated) into individual semiconductor elements (semiconductor chips). Then, by expanding the adhesive tape radially using a wafer ring, after the expanding step of forming a gap between adjacent semiconductor elements, the individual semiconductor elements are pushed up with a needle. , A pickup process for picking up is performed. Then, the picked-up semiconductor device is transferred to a mounting process for mounting it on a metal lead frame or a substrate (for example, a tape substrate, an organic hard substrate, etc.). The semiconductor element thus picked up is adhered to a lead frame or a substrate through an underfill material in a mounting process, and then the semiconductor element is sealed by a sealing portion on the lead frame or the substrate to form a semiconductor device. Manufactured.

In recent years, various studies have been made on an adhesive tape used for manufacturing such a semiconductor device (see, for example, Patent Document 1).

This adhesive tape generally has a substrate (film substrate) and an adhesive layer formed on this substrate, and the semiconductor wafer is fixed by the adhesive layer. Further, the adhesive layer is usually composed of a resin composition containing an adhesive base resin and a photocurable resin so that the semiconductor chip can be easily picked up after the semiconductor wafer dicing process. There is. That is, when energy is applied to the adhesive layer after the dicing process, the resin composition is cured and the adhesiveness of the adhesive layer is lowered, so that the semiconductor element can be easily picked up.

Here, when the adhesive tape is attached to the semiconductor wafer in the above-mentioned dicing step, when the semiconductor wafer is cut using a dicing saw, and when the semiconductor element is picked up in the pickup step, the semiconductor element is electrostatically charged. Occurs, and there is a problem that the semiconductor element is damaged due to the discharge of the static electricity in the semiconductor element, and the characteristics of the semiconductor element are deteriorated.

Such a problem is associated with the recent increase in the size of semiconductor wafers. Particularly, in the dicing process, the semiconductor wafer is exposed to dicing for a long time. Remarkably recognized.

Further, such a problem is not limited to the case where a semiconductor element is obtained by dividing a semiconductor substrate (semiconductor wafer) as an electronic substrate into individual pieces, and a glass substrate, a ceramic substrate, a resin material substrate, a metal material substrate, The same occurs in the case of dividing various substrates such as a semiconductor-sealed connected body in which a plurality of semiconductor elements are connected and sealed by a sealing portion, and further, it is limited to the step of dividing into individual pieces. No, for example, it can be obtained by thinning various substrates such as a semiconductor encapsulation linked body or a semiconductor substrate, a step of transporting and storing the semiconductor encapsulation linked body, and dividing the semiconductor encapsulation linked body into individual pieces. The same occurs in the step of rearranging the semiconductor encapsulant as a component.

JP, 2009-245989, A

An object of the present invention is to provide an adhesive tape that can appropriately suppress or prevent static electricity from being generated on a substrate to which it is attached, and an adhesive tape substrate used when obtaining this adhesive tape.

Such an object is achieved by the present invention described in (1) to (15) below.
(1) A base material containing a resin material and a conductive material,
A pressure-sensitive adhesive tape that is configured by a laminate including an adhesive layer laminated on one surface of the base material, and is used by temporarily fixing at least one of a substrate and a component ,
The substrate has a surface resistivity on the other surface side of more than 1.0×10 ⁸ (Ω/□) and a volume resistivity of 1.0×10 ¹⁶ (Ω·m) or less. Oh it is,
Furthermore, an adhesive tape characterized by satisfying the following requirement I.
Requirement I: The pressure-sensitive adhesive tape having a width of 20 mm is attached to a section of a silicon wafer having a length of 4 inches or more and 6 inches or less, and left for 3 hours, and thereafter, UV illuminance: 55 W/cm ² , UV irradiation amount: 200 mj/cm. after the irradiation with ultraviolet rays to the adhesive layer in the ^second condition, having one end of the adhesive tape, the temperature 24 ° C., when peeled at 300 mm / min in the direction of 180 ° at a humidity of 40% Rh The peak potential measured on the silicon wafer should be 40 V or less.
(2) A base material containing a resin material and a conductive material,
A pressure-sensitive adhesive tape that is configured by a laminate including an adhesive layer laminated on one surface of the base material, and is used by temporarily fixing at least one of a substrate and a component,
The substrate has a surface resistivity on the other surface side of more than 1.0×10 ⁸ (Ω/□) and a volume resistivity of 1.0×10 ¹⁶ (Ω·m) or less. Yes,
Furthermore, an adhesive tape characterized by satisfying the following requirement II.
Requirement II: The adhesive tape having a width of 20 mm is attached to a section of a silicon wafer having a length of 4 inches or more and 6 inches or less, and left for 3 hours, and thereafter, ultraviolet illuminance: 55 W/cm ² , ultraviolet irradiation amount: 200 mj/cm. After irradiating the pressure-sensitive adhesive layer with ultraviolet rays under the condition of ² , hold one end of the pressure-sensitive adhesive tape, peel it off at a speed of 300 mm/min in the direction of 180° under the conditions of temperature 24° C. and humidity 40% Rh, and leave it for 40 seconds. After that, the potential after attenuation measured on the silicon wafer becomes 5.0 V or less.

( 3 ) The adhesive tape according to (1) or (2) above, which is for processing an electronic substrate.
( 4 ) The pressure-sensitive adhesive tape according to any one of (1) to (3), wherein the surface resistivity of the one surface side of the substrate is more than 1.0×10 ⁹ (Ω/□).

( 5 ) In any one of the above (1) to ( 4 ), the conductive material is at least one of a conductive polymer, a permanent antistatic polymer (IDP), a metal oxide material and carbon black. Adhesive tape as described.

( 6 ) The resin material is an ester polymer, a styrene polymer, an olefin polymer, a carbonate polymer, or a copolymer containing at least one of these polymers. ) Thru|or the adhesive tape in any one of ( 5 ).

( 7 ) The pressure-sensitive adhesive tape according to any one of (1) to ( 6 ) above, wherein the pressure-sensitive adhesive layer contains an adhesive base resin.

( 8 ) The adhesive tape according to ( 7 ), wherein the base resin is an acrylic resin.
( 9 ) The adhesive layer further contains a curable resin that is cured by application of energy, and the application of energy reduces the adhesive force to the electronic substrate laminated on the adhesive layer. 7 ) Or the adhesive tape as described in ( 8 ).

( 10 ) After applying the energy to the adhesive layer,
The substrate has the surface resistivity of the other surface side of more than 1.0×10 ⁸ (Ω/□) and the volume resistivity of 1.0×10 ¹⁶ (Ω·m) or less. The adhesive tape according to ( 9 ) above, which is

( 11 ) The adhesive tape according to any one of (1) to ( 10 ) above, wherein a semiconductor wafer is laminated on the adhesive layer.

( 12 ) The pressure-sensitive adhesive tape according to any one of (1) to ( 11 ), wherein the pressure-sensitive adhesive layer has a thickness of 5 μm or more and 50 μm or less.

( 13 ) The pressure-sensitive adhesive tape according to any one of (1) to ( 12 ), wherein the substrate has a thickness of 30 μm or more and 150 μm or less.

( 14 ) A base material for an adhesive tape,
The adhesive tape substrate contains a resin material and a conductive material,
The adhesive tape base material is used for an adhesive tape having an adhesive layer laminated on one surface thereof, and the surface resistivity of the other surface side of the adhesive tape base material is 1.0×10 ⁸ (Ω/ □) is greater, and state, and are a volume resistivity of ^{1.0 × 10 16 (Ω · m} ) or less,
Furthermore, the base material for adhesive tapes satisfying the following requirement I.
Requirement I: The pressure-sensitive adhesive tape having a width of 20 mm is attached to a section of a silicon wafer having a length of 4 inches or more and 6 inches or less, and left for 3 hours, and thereafter, UV illuminance: 55 W/cm ² , UV irradiation amount: 200 mj/cm. after the irradiation with ultraviolet rays to the adhesive layer in the ^second condition, having one end of the adhesive tape, the temperature 24 ° C., when peeled at 300 mm / min in the direction of 180 ° at a humidity of 40% Rh The peak potential measured on the silicon wafer should be 40 V or less.
(15) A base material for an adhesive tape,
The adhesive tape substrate contains a resin material and a conductive material,
The adhesive tape base material is used for an adhesive tape having an adhesive layer laminated on one surface thereof, and the surface resistivity of the other surface side of the adhesive tape base material is 1.0×10 ⁸ (Ω/ □) and its volume resistivity is 1.0×10 ¹⁶ (Ω·m) or less,
Further, a substrate for pressure-sensitive adhesive tape, which satisfies the following requirement II.
Requirement II: The adhesive tape having a width of 20 mm is attached to a section of a silicon wafer having a length of 4 inches or more and 6 inches or less and left for 3 hours, and thereafter, ultraviolet illuminance: 55 W/cm ² , ultraviolet irradiation amount: 200 mj/cm. After irradiating the pressure-sensitive adhesive layer with ultraviolet rays under the condition of ² , hold one end of the pressure-sensitive adhesive tape, peel it off at a speed of 300 mm/min in the direction of 180° under the conditions of temperature 24° C. and humidity 40% Rh, and leave it for 40 seconds. After that, the potential after decay measured on the silicon wafer becomes 5.0 V or less.

According to the present invention, the surface resistivity of the other surface side of the substrate on which the adhesive layer is formed is more than 1.0×10 ⁸ (Ω/□), and the volume resistivity thereof is 1.0×. It is 10 ¹⁶ (Ω·m) or less. Therefore, a sticking step of sticking the substrate processing adhesive tape to the board, a dicing step of cutting the board with a dicing saw to obtain individualized pieces (parts), and individualization It is possible to appropriately suppress or prevent static electricity from being generated in the individualized body in a pickup process or the like for picking up the individualized body. Therefore, it is possible to appropriately suppress or prevent the deterioration of the characteristics due to the generation of static electricity in the individualized body. That is, for example, when the substrate is applied to a semiconductor wafer and the semiconductor wafer is divided into individual pieces to obtain semiconductor elements as individual pieces (parts), static electricity is discharged in the semiconductor elements. As a result, it is possible to appropriately suppress or prevent the semiconductor element from being damaged and the characteristics of the semiconductor element being deteriorated as a result.

In addition, according to the base material for an adhesive tape of the present invention, when the adhesive layer is combined with the adhesive layer to form an adhesive tape by laminating the adhesive layer on one surface side of the adhesive tape substrate, the adhesive layer of the substrate is formed. The surface resistivity of the other surface side is more than 1.0×10 ⁸ (Ω/□), and the volume resistivity thereof is 1.0×10 ¹⁶ (Ω·m) or less. Therefore, a sticking step of sticking the adhesive tape to a substrate, a dicing step of cutting the substrate using a dicing saw to obtain an individualized individualized product, and an individualized individualized product. It is possible to appropriately suppress or prevent static electricity from being generated in the individualized body in a pickup process or the like for picking up. Therefore, it is possible to appropriately suppress or prevent the deterioration of the characteristics due to the generation of static electricity in the individualized body. That is, for example, when the substrate is applied to a semiconductor wafer and the semiconductor wafer is singulated to obtain a semiconductor element as an individualized body, the semiconductor element is caused by static electricity discharge. It is possible to accurately suppress or prevent the element from being damaged and the characteristics of the semiconductor element from being deteriorated as a result.

It is a longitudinal section showing an example of a semiconductor device manufactured using an adhesive tape of the present invention. FIG. 3 is a vertical cross-sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of the present invention. It is a longitudinal section showing an embodiment of an adhesive tape of the present invention. FIG. 4 is a vertical sectional view for explaining a method of manufacturing the adhesive tape shown in FIG. 3.

Hereinafter, the adhesive tape of the present invention will be described in detail.
First, prior to describing the adhesive tape of the present invention, a semiconductor device manufactured using the adhesive tape of the present invention will be described.

<Semiconductor device>
FIG. 1 is a vertical cross-sectional view showing an example of a semiconductor device manufactured using the adhesive tape of the present invention. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

A semiconductor device 10 shown in FIG. 1 is a QFP (Quad Flat Package) type semiconductor package, and includes a semiconductor chip (semiconductor element) 20, a die pad 30 that supports the semiconductor chip 20 via an adhesive layer 60, and a semiconductor chip 20. It has a lead 40 electrically connected to and a mold part (sealing part) 50 for sealing the semiconductor chip 20.

The die pad 30 is composed of a metal substrate and has a function as a support for supporting the semiconductor chip 20.

The die pad 30 is a metal substrate made of various metal materials such as Cu, Fe, Ni and alloys thereof (for example, Cu-based alloys and iron-nickel-based alloys such as Fe-42Ni), and the like. The surface of the metal substrate is silver-plated or Ni-Pd-plated, and the surface of the Ni-Pd-plated is provided with a gold-plated (gold flash) layer provided to improve the stability of the Pd layer. What is used is used.

The plan view shape of the die pad 30 usually corresponds to the plan view shape of the semiconductor chip 20, and is, for example, a quadrangle such as a square or a rectangle.

A plurality of leads 40 are radially provided on the outer periphery of the die pad 30.
The end of the lead 40 opposite to the die pad 30 projects (exposes) from the mold part 50.

The lead 40 is made of a conductive material, and for example, the same material as the constituent material of the die pad 30 described above can be used.

Further, the lead 40 may have a surface plated with tin or the like. As a result, when the semiconductor device 10 is connected to the terminals provided on the motherboard via the solder, the adhesion between the solder and the leads 40 can be improved.

The semiconductor chip 20 is fixed (fixed) to the die pad 30 via an adhesive layer 60.

The adhesive layer 60 is not particularly limited, but is formed using various adhesives such as an epoxy adhesive, an acrylic adhesive, a polyimide adhesive, and a cyanate adhesive. In addition, the adhesive layer 60 may include metal particles such as silver powder and copper powder. As a result, the thermal conductivity of the adhesive layer 60 is improved, so that heat is efficiently transferred from the semiconductor chip 20 to the die pad 30 via the adhesive layer 60, so that the heat dissipation performance when the semiconductor chip 20 is driven is improved. ..

Further, the semiconductor chip 20 has an electrode pad 21, and the electrode pad 21 and the lead 40 are electrically connected by a wire 22. As a result, the semiconductor chip 20 and each lead 40 are electrically connected.

The material of the wire 22 is not particularly limited, but the wire 22 can be composed of, for example, Au wire or Al wire.

The die pad 30, each member provided on the upper surface side of the die pad 30, and the inner portion of the lead 40 are sealed by the mold section 50. As a result, the outer ends of the leads 40 project from the mold portion 50 made of a cured product of the semiconductor sealing material.

The semiconductor device 10 having such a configuration is manufactured as follows, for example, by using the adhesive tape of the present invention as one for processing a semiconductor wafer.

<Method of manufacturing semiconductor device>
FIG. 2 is a vertical sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of the present invention. In the following description, the upper side in FIG. 2 is referred to as “upper” and the lower side is referred to as “lower”.

[1A] First, an adhesive tape 100 having the base material 4 and the adhesive layer 2 laminated on the upper surface (one surface) of the base material 4 is prepared (see FIG. 2A).

The pressure-sensitive adhesive tape 100 is composed of the pressure-sensitive adhesive tape of the present invention, which will be described in detail later.

[2A] Next, as shown in FIG. 2(b), the adhesive tape 100 is placed on a dicer table (not shown), and the surface of the semiconductor wafer 7 on the side where the semiconductor element is not present is placed at the center 122 thereof. It is placed on the adhesive layer 2 and lightly pressed to stack (stick) the semiconductor wafers 7 (sticking step).

Note that the semiconductor wafer 7 may be attached to the adhesive tape 100 in advance and then placed on the dicer table.

Further, in the present embodiment, a large semiconductor wafer 7 having a size of, for example, 12 inches is laminated on the adhesive tape 100.

[3A] Next, the outer peripheral portion 121 of the adhesive layer 2 is fixed by the wafer ring 9, and then the semiconductor wafer 7 as a substrate is cut (diced) by using a dicing saw (blade) (not shown) for semiconductor. The semiconductor chip 20 as a component is obtained on the adhesive tape 100 by dividing the wafer 7 into individual pieces (dicing step; see FIG. 2C).

At this time, the adhesive tape 100 has a buffering effect and prevents cracking, chipping, etc. when the semiconductor wafer 7 is cut.

Further, the cutting of the semiconductor wafer 7 using the blade is performed so as to reach the middle of the substrate 4 in the thickness direction, as shown in FIG. As a result, it is possible to surely carry out the individualization of the semiconductor wafer.

[4A] Next, energy is applied to the adhesive layer 2 included in the adhesive tape 100 to reduce the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7.
As a result, peeling occurs between the adhesive layer 2 and the semiconductor wafer 7.

The method of applying energy to the pressure-sensitive adhesive layer 2 is not particularly limited, and examples thereof include a method of irradiating the pressure-sensitive adhesive layer 2 with energy rays, a method of heating the pressure-sensitive adhesive layer 2, and the like. It is preferable to use a method of irradiating the line from the side of the base material 4 of the adhesive tape 100.

Since such a method does not require the semiconductor chip 20 to undergo an unnecessary heat history and can apply energy to the adhesive layer 2 relatively easily and efficiently, it is preferably used as a method of applying energy. To be

Examples of energy rays include particle rays such as ultraviolet rays, electron rays, and ion beams, or a combination of two or more kinds of these energy rays. Among these, it is particularly preferable to use ultraviolet rays. The ultraviolet rays can efficiently reduce the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7.

[5A] Next, the adhesive tape 100 is radially extended by an expanding device (not shown), and the individualized semiconductor wafer 7, that is, the semiconductor chips 20 as parts are opened at regular intervals (see FIG. 2D). After that, the semiconductor chip 20 is pushed up using a needle or the like, and in this state, it is picked up by suction with a vacuum collet or air tweezers (pickup step; see FIG. 2E).

[6A] Next, the picked-up semiconductor chip 20 is mounted on the die pad 30 via the adhesive layer 60, and thereafter, the electrode pad 21 provided on the semiconductor chip 20 and the lead 40 are wire-bonded to each other to electrically connect the wires 22. Connect to each other.

[7A] Next, the semiconductor chip 20 is sealed with the mold section 50.
The encapsulation by the mold part 50 is performed, for example, by preparing a molding die having an internal space corresponding to the shape of the mold part 50 to be formed, and by enclosing the semiconductor chip 20 arranged in the internal space in a powder form. The inner space is filled with the semiconductor sealing material forming Then, in this state, the semiconductor encapsulating material is heated to be cured to be a cured product of the semiconductor encapsulating material.

The semiconductor device 10 can be obtained by the method for manufacturing a semiconductor device having the steps described above. The adhesive tape 100 (adhesive tape of the present invention) used in the method for manufacturing a semiconductor device will be described below.

<Adhesive tape>
FIG. 3 is a vertical cross-sectional view showing an embodiment of the adhesive tape of the present invention. In addition, in the following description, the upper side in FIG. 3 is referred to as “upper” and the lower side is referred to as “lower”.

The pressure-sensitive adhesive tape 100 (pressure-sensitive adhesive tape of the present invention) is a laminated body including a base material 4 containing a resin material and a conductive material, and an adhesive layer 2 laminated on one surface of the base material 4. The semiconductor wafer 7 (semiconductor substrate) is temporarily fixed and used, and the base material 4 has a surface resistivity on the other surface side of more than 1.0×10 ⁸ (Ω/□). And the volume resistivity thereof is 1.0×10 ¹⁶ (Ω·m) or less.

By setting the surface resistivity on the other surface side opposite to the one surface on which the adhesive layer 2 of the base material 4 is laminated and the volume resistivity of the base material 4 within such a range, the pasting step [2A] In the dicing step [3A], the pickup step [5A], etc., it is possible to appropriately suppress or prevent static electricity from being generated in the semiconductor chip 20. Therefore, it is possible to appropriately suppress or prevent the semiconductor chip from being damaged due to the discharge of static electricity, resulting in deterioration of the characteristics of the semiconductor chip 20 and further damage to the semiconductor chip 20. it can.

Note that a plurality of semiconductor devices 10 can be obtained from one semiconductor wafer 7 by repeatedly performing the step [5A] to the step [7A], but it is obtained by cutting the semiconductor wafer 7. In the state where some of the plurality of semiconductor chips 20 remain on the adhesive tape 100, the repetition of the above steps [5A] to [7A] is temporarily stopped, and after this stop, the above step [5A] is again performed. ]-The said process [7A] may be repeated. At this time, when the stop time is long, for example, one day or more, the adhesive tape 100 to which the semiconductor chip 20 is attached may be removed (peeled) from the dicer table. Even when the semiconductor chip 20 is removed from the table, the generation of static electricity on the semiconductor chip 20 can be appropriately suppressed or prevented.

Hereinafter, the base material 4 and the adhesive layer 2 of the adhesive tape 100 (dicing tape) will be described in detail.

The adhesive tape 100 has a function of reducing the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 by applying energy to the adhesive layer 2 included in the adhesive tape 100.

Examples of the method of applying energy to the adhesive layer 2 include a method of irradiating the adhesive layer 2 with energy rays and a method of heating the adhesive layer 2. Among them, the semiconductor chip 20 may generate unnecessary heat history. Since there is no need to go through, a method of irradiating the adhesive layer 2 with energy rays is preferably used. Therefore, in the following, as the adhesive layer 2, the adhesive layer whose adhesiveness is lowered by irradiation with energy rays will be described as a representative.

<Substrate 4>
The base material 4 contains a resin material as a main material and a conductive material, and has a function of supporting the adhesive layer 2 provided on the base material 4.

The resin material is not particularly limited, and examples thereof include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, polyethylene such as ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene. Ionomers such as polyolefins such as polypropylene, polyvinyl chloride, polybutene, polybutadiene, polymethylpentene (olefin polymers), ethylene-vinyl acetate copolymers, zinc ion cross-linked products, sodium ion cross-linked products , Ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester (random, alternating) copolymer, ethylene-propylene copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, etc. Polyolefin resins (ester polymers) such as olefin copolymers, polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polybutylene naphthalate, etc., polyurethanes, polyimides, polyamides, polyetherketones such as polyetheretherketone , Olefin-based thermoplastic elastomers (olefin-based polymers) such as, polyether sulfone, polystyrene, fluororesins, silicone resins, cellulosic resins, styrene-based thermoplastic elastomers (styrene-based polymers), polypropylene-based thermoplastic elastomers, acrylics Thermoplastic resins such as resins, polyester-based thermoplastic elastomers, polyvinyl isoprene, polycarbonate (carbonate-based polymers), and mixtures of these thermoplastic resins are used. Among them, ester polymers, styrene-based polymers, olefin-based polymers are used. A polymer, a carbonate-based polymer, or a copolymer containing at least one of these polymers is preferable.

Since these resin materials are materials capable of transmitting energy rays such as light (visible rays, near infrared rays, ultraviolet rays), X-rays, and electron rays, in the step [4A], the energy rays are applied to the base material 4 side. It can be preferably used in the case of irradiating the adhesive layer 2 through the substrate 4 from

Particularly, as the resin material, it is preferable to use a mixture of polypropylene and an elastomer or a mixture of polyethylene and an elastomer.

As the elastomer, a block copolymer composed of a polystyrene segment represented by the following general formula (1) and a vinyl polyisoprene segment represented by the following general formula (2) is preferable.

（一般式（１）中、ｎは２以上の整数を表す。）

(In general formula (1), n represents an integer of 2 or more.)

（一般式（２）中、ｎは２以上の整数を表す。）

(In general formula (2), n represents an integer of 2 or more.)

Further, the base material 4 contains a conductive material having conductivity, which is dispersed in the resin material contained as the main material. When the conductive material is contained in the base material 4, the conductive material is caused to function as an antistatic agent, and the surface resistivity on the other surface (lower surface) side of the base material 4 is 1.0×10 ⁸ Since it is possible to set the volume resistivity of the base material 4 to more than (Ω/□) and 1.0×10 ¹⁶ (Ω·m) or less, the attaching step [2A] and the dicing step [3A] are performed. , And the generation of static electricity on the semiconductor wafer 7 and the semiconductor chip 20 in the pickup step [5A] is appropriately suppressed or prevented.

The conductive material is not particularly limited as long as it has conductivity, but examples thereof include a conductive polymer, a surfactant, a permanent antistatic polymer (IDP), a metal material, a metal oxide material and carbon. Examples thereof include system materials, and of these, one kind or a combination of two or more kinds can be used.

Examples of the conductive polymer include polythiophene, polyaniline, polypyrrole, polyacetylene, PEDOT (poly-ethylenedioxythiophene), PEDOT/PSS, poly(p-phenylene), polyfluorene, polycarbazole, polysilane, and derivatives thereof. Among these, one kind or a combination of two or more kinds can be used.

Examples of polythiophene or its derivative include polythiophene, poly(3,4)-ethylenedioxythiophene, and poly(3-thiophene-β-ethanesulfonic acid).

Examples of polyaniline or its derivatives include polyaniline, polymethylaniline, polymethoxyaniline and the like.

Furthermore, examples of polypyrrole or a derivative thereof include polypyrrole, poly-3-methylpyrrole, and poly-3-octylpyrrole.

Examples of the surfactant include anionic surfactants, cationic surfactants, nonionic surfactants, amphoteric surfactants and the like.

As the permanent antistatic polymer (IDP), for example, all IDPs such as polyesteramide type, polyetherester polyolefin type, polyetheresteramide type and polyurethane type can be used.

Furthermore, examples of the metal material include gold, silver, copper, silver-coated copper, nickel, and the like, and metal powders of these are preferably used.

Examples of the metal oxide material include indium tin oxide (ITO), indium oxide (IO), antimony tin oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO ₂ ), and the like. Powder is preferably used.

Examples of the carbon-based material include carbon black, single-walled carbon nanotubes, carbon nanotubes such as multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, and graphene.

Among these, the conductive material is preferably at least one selected from a conductive polymer, a permanent antistatic polymer (IDP), a metal oxide material, and carbon black. Since these materials have a small temperature dependence of the resistivity, in the step [3A], even when the base material 4 is heated when the semiconductor wafer 7 is diced, the resistance value changes. By reducing the amount, the surface resistivity of the other surface of the base material 4 exceeds 1.0×10 ⁸ (Ω/□), and the volume resistivity of the base material 4 is 1.0×10 ¹⁶ (Ω). -M) The following can be set.

When a conductive polymer or a polymer material such as a permanent antistatic polymer (IDP) is used as the conductive material, the other side of the base material 4 can be adjusted by adjusting the orientation degree in the base material 4. The surface resistivity and the volume resistivity of the substrate 4 on the surface can be set above the lower limit and below the upper limit, respectively. That is, by appropriately adjusting the MD or TD draw ratio when forming the base material 4, the surface resistivity of the other surface side of the base material 4 and the volume resistivity of the base material 4 are respectively determined as follows. It can be set above the lower limit and below the upper limit.

The content of the conductive material in the base material 4 is preferably 5% by weight or more and 30% by weight or less, and is 10% by weight or more and 20% by weight or less, although it slightly varies depending on the type of the conductive material. Is more preferable. As a result, the surface resistivity of the other surface of the base material 4 and the magnitude of the volume resistivity of the base material 4 can be reliably set above the lower limit value and below the upper limit value, respectively.

Further, the base material 4 includes a softening agent such as mineral oil, a filler such as calcium carbonate, silica, talc, mica and clay, an antioxidant, a light stabilizer, a lubricant, a dispersant, a neutralizing agent, a coloring agent, etc. May be included.

The thickness of the base material 4 is not particularly limited, but is preferably 30 μm or more and 150 μm or less, and more preferably 40 μm or more and 120 μm or less. When the thickness of the base material 4 is within this range, the dicing of the semiconductor wafer 7 in the step [3A] can be performed with excellent workability.

Further, it is preferable that the base material 4 has a functional group such as a hydroxyl group or an amino group, which is reactive with the constituent materials contained in the adhesive layer 2, exposed on the surface thereof.

In addition, the base material 4 may be formed of a laminated body (multilayer body) in which a plurality of layers formed of different resin materials are laminated. Further, it may be composed of a blend film obtained by dry blending the resin material.

In addition, when the base material 4 is formed of a laminated body, it is preferable that the base material 4 is composed of an odd layer in which odd layers are laminated. Further, in the case of odd layers, a symmetrical structure in which the same layer composed of the same constituent material, the content of the constituent material, etc. is symmetrically laminated on both sides centering on the layer located in the center is more preferable. preferable. Thereby, in the step [4A], when the energy ray is transmitted from the side of the substrate 4 from the side of the substrate 4, the transmittance of the energy ray in the substrate 4 can be improved. A line can be irradiated with high efficiency.

<Adhesive layer>
The adhesive layer 2 has a function of adhering and supporting the semiconductor wafer 7 when the semiconductor wafer 7 is diced in the step [3A]. Further, the adhesive layer 2 has a reduced adhesiveness to the semiconductor wafer 7 due to the application of energy to the adhesive layer 2, and thus the adhesive layer 2 and the semiconductor wafer 7 can be easily separated from each other. It will be.

The adhesive layer 2 having such a function is composed of a resin composition containing (1) an adhesive base resin and (2) a curable resin that cures the adhesive layer 2 as main materials.

Hereinafter, each component contained in the resin composition will be sequentially described in detail.
(1) Base Resin The base resin has adhesiveness and is included in the resin composition in order to impart adhesiveness to the semiconductor wafer 7 to the adhesive layer 2 before the adhesive layer 2 is irradiated with energy rays. It is what is done.

As such a base resin, acrylic resin (adhesive), silicone resin (adhesive), polyester resin (adhesive), polyvinyl acetate resin (adhesive), polyvinyl ether resin (adhesive) Alternatively, known materials used as an adhesive layer component such as urethane resin (adhesive) may be mentioned, and among them, acrylic resin is preferably used. An acrylic resin is preferably used as a base resin because it has excellent heat resistance and can be obtained relatively easily and inexpensively.

The acrylic resin refers to one having a polymer (homopolymer or copolymer) containing a (meth)acrylic acid ester as a monomer main component as a base polymer.

The (meth)acrylic acid ester is not particularly limited, and examples thereof include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, and butyl (meth)acrylate. , Isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, (meth) Octyl acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, (meth ) Undecyl acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, (meth) (Meth)acrylic acid alkyl ester such as octadecyl acrylate, (meth)acrylic acid cycloalkyl ester such as (meth)acrylic acid cyclohexyl, (meth)acrylic acid aryl ester such as phenyl (meth)acrylate, etc. Among these, one kind or a combination of two or more kinds can be used. Among these, alkyl (meth)acrylates such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and octyl (meth)acrylate. Is preferred. The (meth)acrylic acid alkyl ester is particularly excellent in heat resistance and can be obtained relatively easily and inexpensively.

In addition, in this specification, a (meth)acrylic acid ester shall be used with the meaning including both an acrylic acid ester and a methacrylic acid ester.

The glass transition point of this acrylic resin is preferably 20° C. or lower. This allows the adhesive layer 2 to exhibit excellent adhesiveness before the adhesive layer 2 is irradiated with energy rays.

As the acrylic resin, a resin containing a copolymerizable monomer is used, if necessary, as a monomer component constituting a polymer for the purpose of modifying cohesive strength, heat resistance and the like.

The copolymerizable monomer is not particularly limited, but examples thereof include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and (meth). Hydroxyl group-containing monomers such as 6-hydroxyhexyl acrylate, epoxy group-containing monomers such as glycidyl (meth)acrylate, (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, isocrotonic acid, etc. Carboxyl group-containing monomers, maleic anhydride, acid anhydride group-containing monomers such as itaconic anhydride, (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol( Amide-based monomers such as (meth)acrylamide, N-methylolpropane (meth)acrylamide, N-methoxymethyl (meth)acrylamide, N-butoxymethyl (meth)acrylamide, aminoethyl (meth)acrylate, (meth)acrylic acid Amino group-containing monomers such as N,N-dimethylaminoethyl, t-butylaminoethyl (meth)acrylate, cyano group-containing monomers such as (meth)acrylonitrile, ethylene, propylene, isoprene, butadiene, isobutylene Olefinic monomers, styrene, α-methylstyrene, styrene monomers such as vinyltoluene, vinyl acetate, vinyl ester monomers such as vinyl propionate, vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether, vinyl chloride, chloride Halogen atom-containing monomer such as vinylidene, methoxyethyl (meth)acrylate, alkoxy group-containing monomer such as ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine , N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N-(meth) Examples thereof include monomers having a nitrogen atom-containing ring such as acryloylmorpholine, and one or more of these can be used in combination.

The content of these copolymerizable monomers is preferably 40% by weight or less, and more preferably 10% by weight or less, based on all the monomer components constituting the acrylic resin.

The copolymerizable monomer may be contained in the end of the main chain of the polymer constituting the acrylic resin, or may be contained in the main chain, and further, the end of the main chain and the main chain. It may be included in both the inside and the inside.

Further, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of cross-linking polymers and the like.

Examples of the polyfunctional monomer include 1,6-hexanediol (meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate. , Pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, glycerin di(meth)acrylate, epoxy (meth)acrylate, polyester ( Examples thereof include (meth)acrylate, urethane (meth)acrylate, divinylbenzene, butyldi(meth)acrylate, and hexyldi(meth)acrylate, and one or more of these can be used in combination.

Further, ethylene-vinyl acetate copolymer, vinyl acetate polymer and the like can also be used as the copolymerizable monomer component.

In addition, such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. Further, the polymerization of these monomer components can be carried out using a polymerization method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, a suspension polymerization method or the like.

As the acrylic resin obtained by polymerizing the monomer components described above, an acrylic resin having a carbon-carbon double bond in the side chain, the main chain or at the end of the main chain (“double It may be referred to as a "bond-introducing acrylic resin"). When the acrylic resin is a double bond-introducing acrylic resin, the obtained adhesive layer 2 should function as the above-mentioned adhesive layer 2 even if the addition of a curable resin described later is omitted. You can

Such a double bond-introducing acrylic resin has one carbon-carbon double bond in each side chain of 1/100 or more of the side chains in the polymer constituting the acrylic resin. A double bond-introducing acrylic resin (also referred to as “double bond side chain-introducing acrylic resin”) is preferable. Thus, introducing a carbon-carbon double bond into the side chain of an acrylic resin is advantageous from the viewpoint of molecular design. The double bond side chain-introducing acrylic resin may have a carbon-carbon double bond in the main chain or at the end of the main chain.

A method for synthesizing such a double bond-introducing acrylic resin (that is, a method for introducing a carbon-carbon double bond into the acrylic resin) is not particularly limited, and for example, a functional group as a copolymerizable monomer After copolymerizing using a monomer having, to synthesize an acrylic resin containing a functional group (sometimes referred to as “functional group-containing acrylic resin”), the functional group in the functional group-containing acrylic resin A compound having a functional group capable of reacting and a carbon-carbon double bond (also referred to as "carbon-carbon double bond-containing reactive compound") is added to a functional group-containing acrylic resin by carbon-carbon. Examples thereof include a method of synthesizing a double bond-introducing acrylic resin by performing a condensation reaction or an addition reaction while maintaining the energy bond curability (energy beam polymerizability) of the double bond.

In addition, as a control means when introducing a carbon-carbon double bond into 1/100 or more of all side chains in the acrylic resin, for example, a condensation reaction or addition to a functional group-containing acrylic resin is used. Examples thereof include a method in which the content of the carbon-carbon double bond-containing reactive compound that is a compound to be reacted is appropriately adjusted.

In addition, when a condensation reaction or an addition reaction of a carbon-carbon double bond-containing reactive compound with a functional group-containing acrylic resin, a catalyst is used to allow the reaction to proceed effectively. The catalyst is not particularly limited, but a tin catalyst such as dibutyltin dilaurate is preferably used. The content of the tin-based catalyst is not particularly limited, but is preferably 0.05 part by weight or more and 1 part by weight or less with respect to 100 parts by weight of the functional group-containing acrylic resin.

Examples of the functional group A in the functional group-containing acrylic resin and the functional group B in the carbon-carbon double bond-containing reactive compound include, for example, a carboxyl group, an acid anhydride group, a hydroxyl group, an amino group, an epoxy group, and an isocyanate. Group, an aziridine group, and the like, and examples of the combination of the functional group A in the functional group-containing acrylic resin and the functional group B in the carbon-carbon double bond-containing reactive compound include a carboxylic acid group (carboxyl group Group) and an epoxy group, a combination of a carboxylic acid group and an aziridyl group, a combination of a hydroxyl group and an isocyanate group, a combination of a hydroxyl group and a carboxyl group, and the like. A combination of a group and an isocyanate group is preferred. This makes it possible to easily trace the reaction between the functional groups A and B.

Further, in the combination of these functional groups A and B, any functional group may be the functional group A of the functional group-containing acrylic resin or the functional group B of the carbon-carbon double bond-containing reactive compound. Is a combination of a hydroxyl group and an isocyanate group, the hydroxyl group is the functional group A in the functional group-containing acrylic resin, and the isocyanate group is a functional group in the carbon-carbon double bond-containing reactive compound. It is preferably a group B.

In this case, examples of the monomer having the functional group A that constitutes the functional group-containing acrylic resin include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Having a carboxyl group, having an acid anhydride group such as maleic anhydride and itaconic anhydride, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, (meth)acrylic acid 4-hydroxybutyl, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethyl) Cyclohexyl)methyl (meth)acrylate, vinyl alcohol, allyl alcohol, 2-hydroxyethyl vinyl ether, 2-hydroxypropyl vinyl ether, 4-hydroxybutyl vinyl ether, ethylene glycol monovinyl ether, diethylene glycol monovinyl ether, propylene glycol monovinyl ether, dipropylene glycol mono Examples thereof include those having a hydroxyl group such as vinyl ether and those having an epoxy group such as glycidyl (meth)acrylate and allyl glycidyl ether.

Moreover, as the carbon-carbon double bond-containing reactive compound having a functional group B, as a compound having an isocyanate group, for example, (meth)acryloyl isocyanate, (meth)acryloyloxymethyl isocyanate, 2-(meth)acryloyloxy Examples include ethyl isocyanate, 2-(meth)acryloyloxypropyl isocyanate, 3-(meth)acryloyloxypropyl isocyanate, 4-(meth)acryloyloxybutyl isocyanate, m-propenyl-α,α-dimethylbenzyl isocyanate, and epoxy. Examples of those having a group include glycidyl (meth)acrylate.

The acrylic resin preferably has a low content of low molecular weight substances from the viewpoint of preventing contamination of the semiconductor wafer 7 and the like when the semiconductor wafer 7 is diced in the step [3A]. .. In this case, the weight average molecular weight of the acrylic resin is preferably set to 300,000 to 5,000,000, more preferably set to 500,000 to 5,000,000, and further preferably set to 800,000 to 3,000,000. If the weight average molecular weight of the acrylic resin is less than 500,000, depending on the type of the monomer component, etc., the anti-contamination property for the semiconductor wafer 7 and the like will deteriorate, and the adhesive residue will remain when the semiconductor chip 20 is peeled off. May occur.

The acrylic resin has a functional group (reactive functional group) such as a hydroxyl group or a carboxyl group (particularly, a hydroxyl group) having reactivity with a crosslinking agent or a photopolymerization initiator. Is preferred. As a result, the crosslinking agent and the photopolymerization initiator are linked to the acrylic resin that is the polymer component, so that the leakage of the crosslinking agent and the photopolymerization initiator from the adhesive layer 2 can be appropriately suppressed or prevented. As a result, the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 is surely reduced by the energy ray irradiation in the step [4A].

(2) Curable resin The curable resin has a curability that is cured by irradiation with energy rays, for example. As a result of this curing, the base resin is incorporated into the crosslinked structure of the curable resin, and as a result, the adhesive strength of the adhesive layer 2 is reduced.

As such a curable resin, for example, a low molecular weight having at least two or more polymerizable carbon-carbon double bonds capable of being three-dimensionally cross-linked by irradiation with energy rays such as ultraviolet rays and electron beams in the molecule as a functional group. A compound is used. Specifically, for example, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, 1,4-butylene glycol di(meth) ) Acrylate, polyethylene glycol di(meth)acrylate, esterification product of (meth)acrylic acid and polyhydric alcohol such as glycerin di(meth)acrylate, ester acrylate oligomer, 2-propenyl-di-3-butenyl cyanurate Cyanurate compounds having a carbon-carbon double bond-containing group such as tris(2-acryloxyethyl)isocyanurate, tris(2-methacryloxyethyl)isocyanurate, and 2-hydroxyethylbis(2-acryl) Roxyethyl)isocyanurate, bis(2-acryloxyethyl)2-[(5-acryloxyhexyl)-oxy]ethyl isocyanurate, tris(1,3-diacryloxy-2-propyl-oxycarbonylamino-n-hexyl) ) Carbon-carbon dicarbonates such as isocyanurate, tris(1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, tris(4-acryloxy-n-butyl)isocyanurate. Examples include isocyanurate compounds having a heavy bond-containing group, commercially available oligoester acrylates, urethane acrylates such as aromatic compounds and aliphatic compounds, and one or more of them are used in combination. be able to. Among these, oligomers having 6 or more functional groups are preferable, and oligomers having 15 or more functional groups are more preferable. Thereby, the curable resin can be more surely cured by the irradiation of the energy ray. Further, such curable resin is preferably urethane acrylate. As a result, it is possible to obtain the effect of suppressing glue cracking at the time of pickup due to appropriate flexibility.

The urethane acrylate is not particularly limited, but examples thereof include a polyester type or polyether type polyol compound and a polyvalent isocyanate compound (eg, 2,4-tolylene diisocyanate, 2,6-tolylene diene). The terminal isocyanate isocyanate prepolymer obtained by reacting isocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc., has a hydroxyl group ( The thing obtained by making a (meth)acrylate (For example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, polyethylene glycol (meth)acrylate, etc.) react is mentioned.

The curable resin is not particularly limited, but it is preferable to mix two or more curable resins having different weight average molecular weights. By using such a curable resin, it is possible to easily control the degree of crosslinking of the resin by irradiation with energy rays, and it is possible to improve the pickup property of the semiconductor chip 20 in the step [5A]. Further, as such a curable resin, for example, a mixture of the first curable resin and a second curable resin having a weight average molecular weight larger than that of the first curable resin may be used.

When the curable resin is a mixture of the first curable resin and the second curable resin, the weight average molecular weight of the first curable resin is preferably about 100 to 1000, and 200 to It is more preferably about 500. The weight average molecular weight of the second curable resin is preferably about 1,000 to 30,000, more preferably about 1,000 to 10,000, and even more preferably about 2,000 to 5,000. Further, the number of functional groups of the first curable resin is preferably 1 to 5 functional groups, and the number of functional groups of the second curable resin is preferably 6 functional groups or more. By satisfying such a relationship, the above effect can be more remarkably exhibited.

The curable resin is preferably added in an amount of 5 parts by weight or more and 500 parts by weight or less, more preferably 10 parts by weight or more and 300 parts by weight or less, and more preferably 20 parts by weight or more with respect to 100 parts by weight of the base resin. It is more preferable that the amount is 200 parts by weight or less. By adjusting the compounding amount of the curable resin as described above, the pickup property of the semiconductor chip 20 in the step [5A] can be made excellent.

This curable resin is obtained by using a double bond-introducing acrylic resin as the above-mentioned acrylic resin, that is, a carbon-carbon double bond at the side chain, in the main chain or at the end of the main chain. In the case of using the existing one, the addition to the resin composition may be omitted. This is because when the acrylic resin is a double bond-introducing type acrylic resin, the pressure-sensitive adhesive layer 2 is produced by the irradiation of energy rays by the function of the carbon-carbon double bond of the double bond-introducing acrylic resin. Is cured, and thus the adhesive strength of the adhesive layer 2 is reduced, so that it can be omitted.

(3) Photopolymerization Initiator Further, the adhesive layer 2 is one whose adhesiveness to the semiconductor wafer 7 is lowered by irradiation with energy rays. In order to facilitate the initiation of the polymerization of the curable resin, it is preferable to contain a photopolymerization initiator.

Examples of the photopolymerization initiator include 2,2-dimethoxy-1,2-diphenylethan-1-one and 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1. -Propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]phenyl}-2-methyl-propan-1-one, benzyldiphenyl sulfide, Tetramethylthiuram monosulfide, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1 -Hydroxycyclohexyl phenyl ketone, Michler's ketone, acetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2- Morpholinopropane-1, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, dibenzyl, α-hydroxycyclohexyl phenyl ketone, benzyl dimethyl ketal, 2-hydroxymethyl phenyl propane, 2 -Naphthalenesulfonyl chloride, 1-phenone-1,1-propanedione-2-(o-ethoxycarbonyl)oxime, benzophenone, benzoylbenzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4 , 4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acryloxybenzophenone, p-acryloxybenzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p-(meth)acryloxy Benzophenone-4-carboxylic acid ester of acrylate such as ethoxybenzophenone, 1,4-butanediol mono(meth)acrylate, 1,2-ethanediol mono(meth)acrylate, 1,8-octanediol mono(meth)acrylate , Thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxane Son, 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloranthraquinone, camphorquinone, halogenated ketone, acylphosphinoxide, acylphosphonate, polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, Dimethyl thioxanthone, diethyl thioxanthone, 2-ethyl anthraquinone, t-butyl anthraquinone, 2,4,5-triallyl imidazole dimer, etc. are mentioned, and one or more of them may be used in combination. You can

Of these, benzophenone derivatives and alkylphenone derivatives are preferable. These compounds have a hydroxyl group as a reactive functional group in the molecule, and can be linked to a base resin or a curable resin via this reactive functional group, and thus function as a photopolymerization initiator more effectively. It can be demonstrated reliably.

The photopolymerization initiator is preferably added in an amount of 0.1 part by weight or more and 50 parts by weight or less, more preferably 0.5 parts by weight or more and 10 parts by weight or less, based on 100 parts by weight of the base resin. .. By adjusting the compounding amount of the photopolymerization initiator as described above, the pick-up property of the semiconductor chip 20 from the adhesive tape 100 becomes suitable.

(4) Crosslinking Agent Furthermore, the curable resin may contain a crosslinking agent. By including the crosslinking agent, the curability of the curable resin can be improved.

The cross-linking agent is not particularly limited, but, for example, an isocyanate cross-linking agent, an epoxy cross-linking agent, a urea resin cross-linking agent, a methylol cross-linking agent, a chelate cross-linking agent, an aziridine cross-linking agent, a melamine cross-linking agent, a polyvalent Examples thereof include metal chelate-based crosslinking agents, acid anhydride-based crosslinking agents, polyamine-based crosslinking agents, and carboxyl group-containing polymer-based crosslinking agents. Of these, isocyanate crosslinking agents are preferable.

The isocyanate cross-linking agent is not particularly limited, for example, a polyisocyanate compound of a polyvalent isocyanate and a trimer of a polyisocyanate compound, a trimer of a terminal isocyanate compound obtained by reacting a polyisocyanate compound and a polyol compound. Alternatively, a blocked polyisocyanate compound obtained by blocking the terminal isocyanate urethane prepolymer with phenol, oxime or the like may be used.

Examples of the polyvalent isocyanate include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane. -2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenylether diisocyanate, 4 , 4'-[2,2-bis(4-phenoxyphenyl)propane] diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, and the like, and one or more of them are used in combination. be able to. Among these, at least one polyisocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate and hexamethylene diisocyanate is preferable.

The crosslinking agent is preferably added in an amount of 0.01 part by weight or more and 50 parts by weight or less, more preferably 5 parts by weight or more and 50 parts by weight or less, based on 100 parts by weight of the base resin. By adjusting the compounding amount of the crosslinking agent as described above, the pick-up property of the semiconductor chip 20 from the adhesive tape 100 becomes suitable.

(5) Other components In addition to the above-mentioned components (1) to (4), the resin composition constituting the pressure-sensitive adhesive layer 2 contains other components such as a tackifier, an antiaging agent, and a pressure-sensitive adhesive modifier. At least one of a filler, a colorant, a flame retardant, a softening agent, an antioxidant, a plasticizer, a surfactant, a conductive material (antistatic agent) and the like may be contained.

Note that, of the other components, the conductive material may be contained in the adhesive layer 2, but it is preferable that the conductive material is not substantially contained therein. As a result, the surface resistivity on the other surface side of the base material 4 and the volume resistivity of the base material 4 were over 1.0×10 ⁸ (Ω/□) and 1.0×10 ¹⁶ (Ω/square), respectively. Ω·m) or less can be set relatively easily.

Further, among these, the tackifier is not particularly limited, for example, rosin resin, terpene resin, coumarone resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic Polymerized petroleum resins and the like can be mentioned, and one or more of these can be used in combination.

Further, the thickness of the adhesive layer 2 is not particularly limited, but is preferably 5 μm or more and 50 μm or less, and more preferably 10 μm or more and 30 μm or less. By setting the thickness of the adhesive layer 2 within such a range, the adhesive layer 2 exhibits good adhesive force before applying energy to the adhesive layer 2, and after applying energy to the adhesive layer 2, Good peelability is exhibited between the adhesive layer 2 and the semiconductor wafer 7.

In addition, the adhesive layer 2 may be formed of a laminated body (multilayer body) in which a plurality of layers composed of different resin compositions are laminated.

Here, as described above, the surface resistivity of the other surface (lower surface) of the base material 4 is more than 1.0×10 ⁸ (Ω/□), and the volume resistivity of the base material 4 is 1. It may be 0×10 ¹⁶ (Ω·m) or less, but the surface resistivity of the other surface (lower surface) of the substrate 4 is more than 1.0×10 ⁸ (Ω/□) and 1.0×10. It is preferably ¹² (Ω/□) or less, more preferably 1.0×10 ¹⁰ (Ω/□) or more and 1.0×10 ¹² (Ω/□) or less. Furthermore, the volume resistivity of the base material 4 is preferably 1.0×10 ¹⁰ (Ω·m) or more and 1.0×10 ¹⁶ (Ω·m) or less, and 1.0×10 ¹¹ (Ω·m). It is more preferable that it is not less than m) and not more than 1.0×10 ¹³ (Ω·m). Thus, even if the surface resistivity of the other surface (lower surface) of the base material 4 is set to be relatively high as in the above range, the volume resistivity of the base material 4 is set within the above range. This makes it possible to more appropriately suppress or prevent static electricity from being generated in the semiconductor chip 20 in the attaching step [2A], the dicing step [3A], the pickup step [5A], and the like. Therefore, it is possible to more appropriately suppress or prevent the semiconductor chip from being damaged due to the discharge of static electricity, resulting in the deterioration of the characteristics of the semiconductor chip 20 and the damage of the semiconductor chip 20. You can

In particular, in the present embodiment, the adhesive tape 100 is laminated with a large semiconductor wafer 7 such as 12 inches, and the semiconductor wafer 7 is used for a longer time in the dicing step [3A]. Although it will be cut, by setting the surface resistivity on the other surface (lower surface) side of the base material 4 and the volume resistivity of the base material 4 as described above, such a large-sized semiconductor wafer can be obtained. Also in No. 7, deterioration of the characteristics of the semiconductor chip 20 and further damage to the semiconductor chip 20 are appropriately suppressed or prevented.

The surface resistivity of one surface (upper surface) side of the base material 4, that is, the adhesive layer 2 side is preferably more than 1.0×10 ⁹ (Ω/□), and 1.0×10 ¹⁰ (Ω). /Square) or more and 1.0*10< ¹³ > (ohm/square) or less is more preferable. As described above, even when the surface resistivity on one surface (upper surface) side of the base material 4 is set relatively high as in the above range, the volume resistivity of the base material 4 is set within the above range. By doing so, the above-mentioned effect can be reliably exhibited.

Further, the adhesive layer 2 has a reduced adhesiveness due to irradiation of energy rays to the adhesive layer 2, but the surface resistivity of the other surface side of the base material 4 and the one surface side of the base material 4 described above. The surface resistivity and the volume resistivity of the base material 4 may be set such that one or both of before and after irradiation of the adhesive layer 2 with the energy ray is set within the above range, It is preferably set within the range after irradiation with energy rays, and more preferably within the range before and after irradiation with energy rays. The generation of static electricity in the semiconductor chip 20 tends to be more noticeable when the semiconductor chip 20 is picked up from the adhesive tape 100 in the pickup step [5A], but the other surface of the base material 4 at this time. By setting the surface resistivity of the semiconductor chip 20, the surface resistivity of the one surface of the base material 4, and the volume resistivity of the base material 4 within the above ranges, the semiconductor chip 20 is not electrostatically charged when the semiconductor chip 20 is picked up. It is possible to accurately suppress or prevent the occurrence of.

The degree of generation of static electricity in the semiconductor chip 20 (semiconductor wafer 7) after such irradiation of energy rays is preferably suppressed to, for example, the degree shown below.

That is, the adhesive tape 100 having a width of 20 mm is attached to a section of a silicon wafer having a length of 4 inches or more and 6 inches or less and left for 3 hours, and thereafter, ultraviolet illuminance: 55 W/cm ² , ultraviolet irradiation amount: 200 mj/cm ² After irradiating the pressure-sensitive adhesive layer 2 with ultraviolet rays under the conditions of 1), the pressure-sensitive adhesive tape 100 has one end and is peeled off at a speed of 300 mm/min in the direction of 180° under the conditions of a temperature of 24° C. and a humidity of 40% Rh. The peak potential measured on the silicon wafer is preferably 40 V or less, and more preferably 16 V or less.

Further, the adhesive tape 100 having a width of 20 mm is attached to a section of a silicon wafer having a length of 4 inches or more and 6 inches or less and left for 3 hours, and thereafter, ultraviolet illuminance: 55 W/cm ² , ultraviolet irradiation amount: 200 mj/cm ² After irradiating the pressure-sensitive adhesive layer 2 with ultraviolet rays under the conditions of 1), the pressure-sensitive adhesive tape 100 was held at one end, peeled at a speed of 300 mm/min in the direction of 180° under the conditions of a temperature of 24° C. and a humidity of 40% Rh, and left for 40 seconds. The post-attenuation potential measured on the silicon wafer later is preferably 5.0 V or less, and more preferably 1.5 V or less.

Next, the adhesive tape 100 having such a configuration can be manufactured, for example, as follows.

<Production method of adhesive tape>
FIG. 4 is a vertical cross-sectional view for explaining a method of manufacturing the adhesive tape shown in FIG. In the following description, the upper side in FIG. 4 is referred to as “upper” and the lower side is referred to as “lower”.

[1B] First, the base material 4 is prepared, and the adhesive layer 2 is formed on the upper surface (one surface) of the base material 4 (see FIG. 4A).

The method for producing the base material 4 is not particularly limited, and examples thereof include general molding methods such as a calendering method, an inflation extrusion method, an extrusion molding method such as a T-die extrusion method, and a wet casting method. When the base material 4 is formed of a laminated body, as a method of manufacturing the base material 4 having such a configuration, for example, a molding method such as a coextrusion method or a dry laminating method is used.

Further, the base material 4 can be used without being stretched, and may be subjected to uniaxial or biaxial stretching treatment, if necessary. As described above, when a polymer material such as a conductive polymer or a permanent antistatic polymer (IDP) is contained in the base material 4 as the conductive material, the degree of orientation in the base material 4 should be adjusted. Thus, the surface resistivity of the other surface side of the base material 4 and the volume resistivity of the base material 4 can be appropriately set. Therefore, by subjecting the base material 4 to MD or TD uniaxial or MD and TD biaxial stretching treatment to adjust the orientation degree of the polymer material in the base material 4, the other base material 4 The surface resistivity and the volume resistivity of the substrate 4 on the surface can be set above the lower limit and below the upper limit, respectively.

Further, on the surface of the base material 4, for the purpose of improving the adhesion between the base material 4 and the adhesive layer 2, corona treatment, chromic acid treatment, matte treatment, ozone exposure treatment, flame exposure treatment, high piezoelectric impact exposure. Surface treatment such as treatment, ionizing radiation treatment, primer treatment and anchor coat treatment may be applied.

In addition, the adhesive layer 2 is obtained by dissolving or varnishing a resin composition, which is a constituent material of the adhesive layer 2, in a solvent on the base material 4 and then applying or spraying the liquid material, and then volatilizing the solvent to make the adhesive. It can be obtained by forming the layer 2.

The solvent is not particularly limited, and examples thereof include methyl ethyl ketone, acetone, toluene, dimethylformaldehyde, and the like, and one or more of them can be used in combination.

The liquid material can be applied or sprayed on the base material 4 by using a method such as die coating, curtain die coating, gravure coating, comma coating, bar coating and lip coating.

[2B] Next, with respect to the pressure-sensitive adhesive layer 2 formed on the base material 4, the base material 4 is left in the thickness direction of the pressure-sensitive adhesive layer 2 so that the center side and the outer peripheral side are separated from each other to form a circle. By removing a part of the adhesive layer 2 in a ring shape, the adhesive layer 2 is provided with the central portion 122 and the outer peripheral portion 121 (see FIG. 4B).

As a method of removing a part of the adhesive layer 2 in an annular shape, for example, there is a method of punching so as to surround the region to be removed and then removing the adhesive layer 2 located in the punched region.

Further, the punching for the region to be removed can be performed by using, for example, a method using a roll-shaped die or a method using a press die. Above all, a method using a roll-shaped mold capable of continuously producing the adhesive tape 100 is preferable.

In addition, in this step, the central portion 122 and the outer peripheral portion 121 are formed by punching out a part of the adhesive layer 2 in a ring shape (circular shape). However, the shape of punching out a part of the adhesive layer 2 is the semiconductor device described above. In the manufacturing method (1), any shape may be used as long as the outer peripheral portion 121 of the adhesive layer 2 can be fixed with a wafer ring. Specifically, as the punching shape, for example, in addition to the above-described circular shape, an elliptical shape such as an elliptical shape or a batten shape, a polygonal shape such as a square shape, a pentagonal shape, and the like can be given.

[3B] Next, the separator 1 is laminated on the pressure-sensitive adhesive layer 2 formed on the base material 4 to obtain the pressure-sensitive adhesive tape 100 in which the pressure-sensitive adhesive layer 2 is covered with the separator 1 (FIG. 4C). reference.).

The method for laminating the separator 1 on the adhesive layer 2 is not particularly limited, but for example, a laminating method using a roll or a laminating method using a press can be used. Among these, the lamination method using a roll is preferable from the viewpoint of productivity that continuous production is possible.

The separator 1 is not particularly limited, but examples thereof include polypropylene film, polyethylene film, polyethylene terephthalate film and the like.

Further, the separator 1 may be peeled off when the pressure-sensitive adhesive tape 100 is used, so that the surface of the pressure-sensitive adhesive tape may be subjected to a release treatment. Examples of the releasing treatment include a treatment of coating the surface of the separator 1 with a releasing agent and a treatment of making fine irregularities on the surface of the separator 1. Examples of the release agent include silicone-based agents, alkyd-based agents, fluorine-based agents and the like.

The adhesive tape 100 covered with the separator 1 can be formed through the above steps.

The pressure-sensitive adhesive tape 100 coated with the separator 1 manufactured in the present embodiment is used after the pressure-sensitive adhesive tape 100 is peeled from the separator 1 in the method for manufacturing a semiconductor device using the pressure-sensitive adhesive tape 100 described above.

When peeling the separator 1 from the pressure-sensitive adhesive layer 2 covered with the separator 1, it is preferable to peel the separator 1 from the surface of the pressure-sensitive adhesive layer 2 at an angle of 90 degrees or more and 180 degrees or less. By setting the angle at which the separator 1 is peeled off within the above range, peeling at a position other than the interface between the adhesive layer 2 and the separator 1 can be reliably prevented.

In this embodiment, the semiconductor device 10 is applied to a quad flat package (QFP) and the semiconductor device 10 having such a configuration is manufactured using the adhesive tape 100. However, the present invention is not limited to this case. However, the adhesive tape 100 can be applied to the manufacture of various types of semiconductor packages, for example, dual in-line package (DIP), chip carrier with plastic leads (PLCC), low profile quad.・Flat package (LQFP), small outline package (SOP), small outline J-lead package (SOJ), thin small outline package (TSOP), thin quad flat package (TQFP), tape -Carrier package (TCP), ball grid array (BGA), chip size package (CSP), matrix array package ball grid array (MAPBGA), chip stacked chip size package It can be applied to memory and logic elements such as.

Further, in the present embodiment, the case where the adhesive tape of the present invention is used for dicing a large-sized semiconductor wafer such as 12 inches and picking up the obtained cut pieces is, of course, 12-inch semiconductor wafer. It goes without saying that the present invention can be applied to a semiconductor wafer as small as 8 inches, and also to an 18 inch semiconductor wafer larger than 12 inches.

Although the adhesive tape of the present invention has been described above, the present invention is not limited to these.

For example, each component included in the adhesive tape of the present invention may be added with any component capable of exhibiting the same function.

Further, the constitution of each layer included in the pressure-sensitive adhesive tape of the present invention can be replaced with an arbitrary one capable of exhibiting the same function, or an arbitrary constitution can be added.

Further, the present invention is not limited to the case of obtaining a semiconductor chip as a cut piece by dicing a semiconductor wafer to which an adhesive tape is attached, but an electronic substrate that causes a defect (such as dust adsorption due to static electricity) due to static electricity. The adhesive tape of the present invention can also be applied to processing applications. Examples of the electronic substrate attached by the adhesive tape of the present invention include, in addition to the above-described semiconductor wafer, for example, glass substrates such as soda lime glass, borosilicate glass, and quartz glass, alumina, silicon nitride, titanium oxide, and other ceramics. Examples thereof include substrates, resin material substrates such as acrylic, polycarbonate, and rubber, and metal material substrates.

Further, the present invention is not limited to processing for dicing a semiconductor wafer, and uses a substrate during a thinning process for thinning a semiconductor encapsulation interconnect or a semiconductor substrate, and a storage process for storing a semiconductor encapsulation interconnect. At least one of the substrate and the component should be temporarily fixed and used in various processes such as the pick-up process for transferring or transferring the component obtained by the above, and the transport process for transporting the component attached as the substrate. You can

<Base material for adhesive tape>
The base material for pressure-sensitive adhesive tape of the present invention is the base material 4 constituting the pressure-sensitive adhesive tape 100 of FIG. 3, and is used in combination with the pressure-sensitive adhesive layer 2 laminated on one surface of the base material 4.

The base material 4 has a surface resistivity on the other surface side of more than 1.0×10 ⁸ (Ω/□) and a volume resistivity of 1.0×10 ¹⁶ (Ω·m) or less. It is characterized by

By setting the surface resistivity on the other surface side opposite to the one surface on which the adhesive layer 2 of the base material 4 is laminated and the volume resistivity of the base material 4 within such a range, the pasting step [2A] In the dicing step [3A], the pickup step [5A], etc., it is possible to appropriately suppress or prevent static electricity from being generated in the semiconductor chip 20. Therefore, it is possible to appropriately suppress or prevent the semiconductor chip from being damaged due to the discharge of static electricity, resulting in deterioration of the characteristics of the semiconductor chip 20 and further damage to the semiconductor chip 20. it can.

As the resin material for the adhesive tape substrate of the present invention, the manufacturing method, and the like, the same materials as those of the substrate 4 can be used, and the above description is applied correspondingly.

Next, specific examples of the present invention will be described.
The present invention is not limited to the description of these examples.

1. Preparation of Raw Materials First, the raw materials used for producing the adhesive tapes of Examples, Comparative Examples and Reference Examples are shown below.

(Resin material 1)
As the resin material 1, polypropylene (“FS2011DG3” manufactured by Sumitomo Chemical Co., Ltd.) was prepared.

(Conductive material 1)
As a conductive material 1 (polymeric antistatic agent), Pelestat 300 (manufactured by Sanyo Kasei Co., Ltd.) was prepared.

(Conductive material 2)
As the conductive material 2, an ionic liquid (manufactured by Koei Chemical Co., Ltd., product number: IL-A2) was prepared.

(Conductive material 3)
As the conductive material 3, polythiophene (manufactured by Arakawa Chemical Co., Ltd., product number: Alacoat AS625) was prepared. The AS 625 contains an acrylic resin as a polymer binder in addition to the conductive material.

(Base resin 1)
As the base resin 1, a resin containing 10 parts by weight of the first copolymer and 90 parts by weight of the second copolymer was prepared. As the first copolymer, a copolymer having a weight average molecular weight of 500000 obtained by copolymerizing 70 parts by weight of butyl acrylate, 25 parts by weight of 2-ethylhexyl acrylate, and 5 parts by weight of vinyl acetate. A polymer was used. Further, as the second copolymer, 50 parts by weight of 2-ethylhexyl acrylate, 10 parts by weight of butyl acrylate, 37 parts by weight of vinyl acetate, and 3 parts by weight of 2-hydroxyethyl methacrylate are copolymerized. The obtained copolymer having a weight average molecular weight of 300,000 was used.

(Curable resin 1)
As the curable resin 1, a 15-functional oligomer urethane acrylate (manufactured by Miwon Specialty Chemical Co., product number: Miramer SC2152) was prepared.

(Crosslinking agent 1)
As the crosslinking agent 1, polyisocyanate (manufactured by Nippon Polyurethane Industry Co., Ltd., product number: Coronate L) was prepared.

(Photopolymerization initiator 1)
As the photopolymerization initiator 1, benzyl dimethyl ketal (manufactured by Ciba Specialty Chemicals, product number: Irgacure 651) was prepared.

2. Preparation of adhesive tape [Example 1]
The resin material 1 (87 parts by weight) and the conductive material 1 (13 parts by weight) were kneaded by a biaxial kneader, and then the kneaded material was extruded by an extruder and dried, and then stretched in MD at a draw ratio of 101 The base material 4 having a thickness of 150 μm was manufactured by performing uniaxial stretching in which the film is stretched at a rate of 100%.

Next, base resin 1 (100 parts by weight), curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), crosslinking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin), and photopolymerization start A liquid material containing a resin composition containing Agent 1 (3 parts by weight based on 100 parts by weight of the base resin) was prepared. This liquid material is applied to the base material 4 by bar coating so that the thickness of the adhesive layer 2 after drying is 20 μm, and then dried at 80° C. for 10 minutes to adhere to one surface of the base material 4. Layer 2 was formed to obtain adhesive tape 100 of Example 1.

[Example 2]
The resin material 1 (87 parts by weight) and the conductive material 1 (13 parts by weight) were kneaded by a biaxial kneader, and then the kneaded material was extruded by an extruder and dried, and then stretched in MD at a draw ratio of 101 The base material 4 having a thickness of 100 μm was produced by performing uniaxial stretching in which the film is stretched in %.

Next, base resin 1 (100 parts by weight), curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), crosslinking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin), and photopolymerization start A liquid material containing a resin composition containing Agent 1 (3 parts by weight based on 100 parts by weight of the base resin) was prepared. This liquid material was applied to the base material 4 by bar coating so that the thickness of the adhesive layer 2 after drying was 10 μm, and then dried at 80° C. for 10 minutes to adhere to one surface of the base material 4. Layer 2 was formed to obtain adhesive tape 100 of Example 2.

[Example 3]
The resin material 1 (80 parts by weight) and the conductive material 1 (20 parts by weight) were kneaded by a biaxial kneader, and then the kneaded material was extruded by an extruder and dried, and then stretched in MD at a draw ratio of 101 The base material 4 having a thickness of 100 μm was produced by performing uniaxial stretching in which the film is stretched in %.

Next, base resin 1 (100 parts by weight), curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), crosslinking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin), and photopolymerization start A liquid material containing a resin composition containing Agent 1 (3 parts by weight based on 100 parts by weight of the base resin) was prepared. This liquid material was applied to the base material 4 by bar coating so that the thickness of the adhesive layer 2 after drying was 10 μm, and then dried at 80° C. for 10 minutes to adhere to one surface of the base material 4. Layer 2 was formed to obtain adhesive tape 100 of Example 3.

[Example 4]
The resin material 1 (77 parts by weight) and the conductive material 1 (23 parts by weight) were kneaded by a biaxial kneader, and then the kneaded material was extruded by an extruder and dried, and then stretched in MD at a draw ratio of 101 The base material 4 having a thickness of 100 μm was produced by performing uniaxial stretching in which the film is stretched in %.

Next, base resin 1 (100 parts by weight), curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), crosslinking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin), and photopolymerization start A liquid material containing a resin composition containing Agent 1 (3 parts by weight based on 100 parts by weight of the base resin) was prepared. This liquid material was applied to the base material 4 by bar coating so that the thickness of the adhesive layer 2 after drying was 10 μm, and then dried at 80° C. for 10 minutes to adhere to one surface of the base material 4. Layer 2 was formed to obtain adhesive tape 100 of Example 4.

[Comparative Example 1]
The resin material 1 was extruded with an extruder to prepare a base material 4 having a thickness of 100 μm.

Next, base resin 1 (100 parts by weight), curable resin 1 (140 parts by weight with respect to 100 parts by weight of the base resin), crosslinking agent 1 (5 parts by weight with respect to 100 parts by weight of the base resin), and photopolymerization start A liquid material containing a resin composition containing Agent 1 (3 parts by weight based on 100 parts by weight of the base resin) was prepared. This liquid material is applied to the base material 4 by bar coating so that the thickness of the adhesive layer 2 after drying becomes 20 μm, and then dried at 80° C. for 10 minutes to adhere to one surface of the base material 4. Layer 2 was formed to obtain adhesive tape 100 of Comparative Example 1.

[Reference Example 1]
The resin material 1 was extruded with an extruder to prepare a base material 4 having a thickness of 100 μm.

Next, base resin 1 (100 parts by weight), curable resin 1 (140 parts by weight with respect to 100 parts by weight of base resin), crosslinking agent 1 (5 parts by weight with respect to 100 parts by weight of base resin), photopolymerization start A liquid material containing a resin composition in which the agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) and the conductive material 2 (12 parts by weight with respect to 100 parts by weight of the base resin) was prepared was prepared. This liquid material was applied to the base material 4 by bar coating so that the thickness of the adhesive layer 2 after drying was 10 μm, and then dried at 80° C. for 10 minutes to adhere to one surface of the base material 4. Layer 2 was formed.

Next, the conductive material 3 was bar-coated on the other surface of the base material 4 so that the thickness of the antistatic layer after drying was 0.3 μm, and then dried at 80° C. for 10 minutes. An adhesive tape 100 of Reference Example 1 was obtained by forming an antistatic layer on the other surface of the base material 4.

[Reference Example 2]
The resin material 1 was extruded with an extruder to prepare a base material 4 having a thickness of 100 μm.

Next, base resin 1 (100 parts by weight), curable resin 1 (140 parts by weight with respect to 100 parts by weight of base resin), crosslinking agent 1 (5 parts by weight with respect to 100 parts by weight of base resin), photopolymerization start A liquid material containing a resin composition in which the agent 1 (3 parts by weight with respect to 100 parts by weight of the base resin) and the conductive material 2 (7 parts by weight with respect to 100 parts by weight of the base resin) was mixed was prepared. This liquid material was applied to the base material 4 by bar coating so that the thickness of the adhesive layer 2 after drying was 10 μm, and then dried at 80° C. for 10 minutes to adhere to one surface of the base material 4. By forming the layer 2, an adhesive tape 100 of Reference Example 2 was obtained.

3. Evaluation The obtained adhesive tapes of Examples, Comparative Examples and Reference Examples were evaluated by the following methods.

3-1. Evaluation of Volume Resistivity of Substrate For the adhesive tapes of Examples, Comparative Examples and Reference Examples, the volume resistivity of the substrate 4 before and after the ultraviolet irradiation of the adhesive layer 2 was measured according to JIS K 6911. It measured using the measuring apparatus (The product made by Advantest, "R12702B").

The adhesive layer 2 was cured by irradiation with ultraviolet rays by irradiating it with ultraviolet rays under the conditions of ultraviolet ray illuminance: 55 W/cm ² and ultraviolet ray irradiation amount: 200 mj/cm ² .

3-2. Evaluation of Surface Resistivity of Substrate For the adhesive tapes of Examples, Comparative Examples and Reference Examples, the surface resistivity of one surface side of the adhesive layer 2 side of the substrate 4 before and after the ultraviolet irradiation of the adhesive layer 2. The surface resistivity of the other surface of the base material 4 was measured according to IEC-61340 using a surface resistance measuring device ("152P-CR" manufactured by Trek Japan KK).

The adhesive layer 2 was cured by irradiation with ultraviolet rays by irradiating it with ultraviolet rays under the conditions of ultraviolet ray illuminance: 55 W/cm ² and ultraviolet ray irradiation amount: 200 mj/cm ² .

3-3. Evaluation of Peak Potential after Peeling from Semiconductor Wafer Each adhesive tape of each Example, Comparative Example and each Reference Example having a width of 20 mm was cut into a silicon wafer having a length of 4 inches to 6 inches. And leave it for 3 hours, and then irradiate the adhesive layer 2 with ultraviolet light under the conditions of ultraviolet illuminance: 55 W/cm ² and ultraviolet irradiation amount: 200 mj/cm ² , and then hold one end of the adhesive tape at a temperature of 24° C. The peak potential measured on the silicon wafer when peeled off at a speed of 300 mm/min in the direction of 180° under the condition of a humidity of 40% Rh was measured by a probe of a voltmeter (“CVM-780” manufactured by Prostat). Was measured by placing it on the silicon wafer from which the adhesive tape was peeled off.

The pressure-sensitive adhesive tapes of Examples, Comparative Examples and Reference Examples were evaluated from the measured peak potentials according to the following criteria.

A: The peak potential was 16 V or less.
◯: The peak potential was more than 16V and 40V or less.
(Triangle|delta): The peak electric potential was more than 40V and 80V or less.
X: The peak potential was more than 80V.

3-4. Evaluation of Post-Attenuation Potential after Peeling from Semiconductor Wafer For each of the adhesive tapes of Examples, Comparative Examples and Reference Examples, a width of 20 mm was measured for a silicon wafer having a length of 4 inches or more and 6 inches or less. After sticking to the section and left for 3 hours, after irradiating the adhesive layer 2 with ultraviolet rays under the conditions of ultraviolet illuminance: 55 W/cm ² and ultraviolet ray irradiation amount: 200 mj/cm ² , hold one end of the adhesive tape at a temperature of 24 Peeled off at a speed of 300 mm/min in the direction of 180° under the conditions of °C and humidity of 40% Rh, and allowed to stand for 40 sec, the attenuated potential measured on the silicon wafer was measured by a voltmeter ("CVM-780" manufactured by Prostat). The probe of “)” was measured by placing it on the silicon wafer 40 seconds after the adhesive tape was peeled off.

Then, the adhesive tapes of Examples, Comparative Examples and Reference Examples were evaluated according to the following criteria from the measured potentials after attenuation.

A: The potential after attenuation was 1.5 V or less.
◯: The potential after attenuation was more than 1.5 V and 5.0 V or less.
Δ: The potential after attenuation was more than 5.0 V and 10 V or less.
X: The potential after decay was more than 10V.

3-5. Evaluation of operability of semiconductor chips Adhesive tapes of Examples, Comparative Examples, and Reference Examples are prepared on a semiconductor wafer on which semiconductor chips are formed, and on the side of the semiconductor wafer on which the semiconductor chips are formed. 100 was fixed with the adhesive layer 2 on the semiconductor wafer side. After that, the semiconductor wafer is cut in the thickness direction until it reaches the middle of the base material 4 and singulated to obtain a plurality of semiconductor chips each having a size of 6 mm in length×6 mm in width, and then the substrate is heated at 60° C. The adhesive tape 100 is stretched in the radial direction in the surface direction of the material 4 to a size of 120%, and the adhesive layer 2 is irradiated with ultraviolet rays to apply energy to cure the adhesive layer 2. It was

Next, the semiconductor chip was picked up by suction with a vacuum collet while maintaining the state where the semiconductor chip was pushed up using a needle, and then the operation of the semiconductor chip was confirmed.

The pickup of the semiconductor chips by suction as described above was repeated for each of the pressure-sensitive adhesive tapes of Examples, Comparative Examples and Reference Examples, 1000 times each.

Then, with respect to the adhesive tapes of Examples, Comparative Examples and Reference Examples, the results of operation confirmation of the picked-up semiconductor chips were evaluated according to the following criteria.

◎: Of 1000 semiconductor chips
No malfunction was found in one semiconductor chip. 〇: Of 1,000 semiconductor chips,
Malfunction was recognized in 1 to 2 semiconductor chips. x: Of 1000 semiconductor chips,
Malfunction was recognized in 3 to 5 semiconductor chips. Table 1 shows the evaluation results of various evaluations performed as described above.

As shown in Table 1, in the adhesive tape of each example, the surface resistivity of the surface of the base material 4 opposite to the adhesive layer 2 was more than 1.0×10 ⁸ (Ω/□), and the base material 4 has a volume resistivity of 1.0×10 ¹⁶ (Ω·m) or less, which makes it possible to suppress generation of static electricity on the semiconductor wafer 7 during sticking of the semiconductor wafer, The results show that it is possible to accurately suppress or prevent the occurrence of malfunction of the picked-up semiconductor chip.

On the other hand, in the adhesive tape of the comparative example, although the surface resistivity of the surface of the base material 4 opposite to the adhesive layer 2 is more than 1.0×10 ⁸ (Ω/□), Cannot be set to 1.0×10 ¹⁶ (Ω·m) or less, so that static electricity is generated on the semiconductor wafer 7 during sticking of the semiconductor wafer, and the static electricity is picked up. The results show that the semiconductor chip malfunctions.

1 Separator 2 Adhesive Layer 4 Base Material 7 Semiconductor Wafer 9 Wafer Ring 10 Semiconductor Device 20 Semiconductor Chip 21 Electrode Pad 22 Wire 30 Die Pad 40 Lead 50 Mold Part 60 Adhesive Layer 100 Adhesive Tape 121 Peripheral Part 122 Central Part

Claims (15)

A base material containing a resin material and a conductive material,
A pressure-sensitive adhesive tape that is configured by a laminate including an adhesive layer laminated on one surface of the base material, and is used by temporarily fixing at least one of a substrate and a component,
The substrate has a surface resistivity on the other surface side of more than 1.0×10 ⁸ (Ω/□) and a volume resistivity of 1.0×10 ¹⁶ (Ω·m) or less. Oh it is,
Furthermore, an adhesive tape characterized by satisfying the following requirement I.
Requirement I: The pressure-sensitive adhesive tape having a width of 20 mm is attached to a section of a silicon wafer having a length of 4 inches or more and 6 inches or less, and left for 3 hours, and thereafter, UV illuminance: 55 W/cm ² , UV irradiation amount: 200 mj/cm. after the irradiation with ultraviolet rays to the adhesive layer in the ^second condition, having one end of the adhesive tape, the temperature 24 ° C., when peeled at 300 mm / min in the direction of 180 ° at a humidity of 40% Rh The peak potential measured on the silicon wafer should be 40 V or less. A base material containing a resin material and a conductive material,
A pressure-sensitive adhesive tape that is configured by a laminate including an adhesive layer laminated on one surface of the base material, and is used by temporarily fixing at least one of a substrate and a component,
The base material has a surface resistivity of 1.0×10 on the other surface side. ⁸ (Ω/□) and its volume resistivity is 1.0×10 ¹⁶ (Ω·m) or less,
Furthermore, an adhesive tape characterized by satisfying the following requirement II.
Requirement II: The adhesive tape having a width of 20 mm is attached to a section of a silicon wafer having a length of 4 inches or more and 6 inches or less, left for 3 hours, and thereafter, an ultraviolet illuminance: 55 W/cm. ^Two , UV irradiation dose: 200mj/cm ^Two After irradiating the pressure-sensitive adhesive layer with ultraviolet rays under the conditions described above, one end of the pressure-sensitive adhesive tape was held, the film was peeled off at a speed of 300 mm/min in the direction of 180° under the conditions of a temperature of 24° C. and a humidity of 40% Rh, and left for 40 seconds. The post-attenuation potential measured later on the silicon wafer should be 5.0 V or less. The adhesive tape according to claim 1 or 2 , wherein the adhesive tape is for processing an electronic substrate. The pressure-sensitive adhesive tape according to any one of claims 1 to 3, wherein the substrate has a surface resistivity on one surface side thereof of more than 1.0 × 10 ⁹ (Ω/□). The pressure-sensitive adhesive tape according to any one of claims 1 to 4 , wherein the conductive material is at least one selected from a conductive polymer, a permanent antistatic polymer (IDP), a metal oxide material, and carbon black. .. The resin material is esters polymers, styrenic polymers, olefinic polymers, carbonate-based polymers, or of claims 1 to 5, which is a copolymer of at least one kind is contained in these polymers, The pressure-sensitive adhesive tape according to any one of items. The pressure-sensitive adhesive tape according to any one of claims 1 to 6 , wherein the pressure-sensitive adhesive layer contains a base resin having an adhesive property. The adhesive tape according to claim 7 , wherein the base resin is an acrylic resin. The adhesive layer further contains a curable resin that is cured by application of energy, by the application of the energy, according to claim 7 or 8 adhesion to electronic substrate which is laminated on the adhesive layer is to decrease Adhesive tape described in. After applying the energy to the adhesive layer,
The substrate has the surface resistivity of the other surface side of more than 1.0×10 ⁸ (Ω/□) and the volume resistivity of 1.0×10 ¹⁶ (Ω·m) or less. The pressure-sensitive adhesive tape according to claim 9 , which is The adhesive tape according to any one of claims 1 to 10 , wherein a semiconductor wafer is laminated on the adhesive layer. The adhesive layer is pressure-sensitive adhesive tape according to any one of claims 1 to 11 its thickness is 5μm or more 50μm or less. The substrate, pressure-sensitive adhesive tape according to any one of claims 1 to 12 its thickness is 30μm or more 150μm or less. A base material for an adhesive tape,
The adhesive tape substrate contains a resin material and a conductive material,
The adhesive tape base material is used for an adhesive tape having an adhesive layer laminated on one surface thereof, and the surface resistivity of the other surface side of the adhesive tape base material is 1.0×10 ⁸ (Ω/ □) is greater, and state, and are a volume resistivity of ^{1.0 × 10 16 (Ω · m} ) or less,
Furthermore, the base material for adhesive tapes satisfying the following requirement I.
Requirement I: The pressure-sensitive adhesive tape having a width of 20 mm is attached to a section of a silicon wafer having a length of 4 inches or more and 6 inches or less, and left for 3 hours, and thereafter, UV illuminance: 55 W/cm ² , UV irradiation amount: 200 mj/cm. after the irradiation with ultraviolet rays to the adhesive layer in the ^second condition, having one end of the adhesive tape, the temperature 24 ° C., when peeled at 300 mm / min in the direction of 180 ° at a humidity of 40% Rh The peak potential measured on the silicon wafer should be 40 V or less. A base material for an adhesive tape,
The adhesive tape substrate contains a resin material and a conductive material,
The adhesive tape substrate is used for an adhesive tape having an adhesive layer laminated on one surface thereof, and the surface resistivity of the other surface side of the adhesive tape substrate is 1.0×10 5. ⁸ (Ω/□) and its volume resistivity is 1.0×10 ¹⁶ (Ω·m) or less,
Further, a substrate for pressure-sensitive adhesive tape, which satisfies the following requirement II.
Requirement II: The pressure-sensitive adhesive tape having a width of 20 mm is attached to a section of a silicon wafer having a length of 4 inches or more and 6 inches or less, and left for 3 hours, and thereafter, UV illuminance: 55 W/cm. ^Two , UV irradiation dose: 200mj/cm ^Two After irradiating the pressure-sensitive adhesive layer with ultraviolet rays under the conditions described above, one end of the pressure-sensitive adhesive tape was held, peeled at a speed of 300 mm/min in the direction of 180° under the conditions of a temperature of 24° C. and a humidity of 40% Rh, and left for 40 seconds. The post-attenuation potential measured later on the silicon wafer should be 5.0 V or less.

Images