JP6418360B1 - Adhesive tape set and semiconductor device transfer adhesive tape - Google Patents

Abstract

  This invention (1st invention) was comprised by the 1st laminated body provided with the 1st base material which makes the sheet form containing a resin material, and the 1st adhesion layer laminated | stacked on the said 1st base material. A semiconductor constituted by a second laminate comprising a semiconductor wafer processing adhesive tape, a sheet-like second substrate containing a resin material, and a second adhesive layer laminated on the second substrate. A pressure-sensitive adhesive tape set comprising at least one element transfer pressure-sensitive adhesive tape, wherein a contact angle of hexadecane with respect to the first pressure-sensitive adhesive layer is 10 ° or more, and hexadecane with respect to the second pressure-sensitive adhesive layer The adhesive tape set is characterized in that the contact angle is less than 10 °.

Description

  The present invention relates to an adhesive tape set including a semiconductor wafer processing adhesive tape and a semiconductor element transfer adhesive tape and a semiconductor element transfer adhesive tape.

  In response to the recent increase in functionality of electronic devices and expansion to mobile applications, there is an increasing demand for higher density and higher integration of semiconductor devices, and IC packages are increasing in capacity and density.

  An example of a manufacturing method of these semiconductor devices is shown below. For example, a semiconductor wafer processing adhesive tape (dicing tape) described in Patent Document 1 is attached to a semiconductor wafer. The semiconductor wafer is cut and separated (divided into individual pieces) into individual semiconductor elements using a dicing saw while fixing the outer peripheral side of the semiconductor wafer with a wafer ring (dicing step). Then, after performing an expanding process, a pick-up process for picking up individual semiconductor elements is performed.

  Next, the process proceeds to a mounting process for mounting the semiconductor element obtained by singulation on a substrate (for example, a tape substrate, an organic hard substrate, etc.). In this mounting step, the picked-up semiconductor element is mounted on the substrate, and thereafter, the underfill material is filled between the substrate and the semiconductor element, thereby being bonded to the substrate. And a semiconductor device is manufactured by sealing a semiconductor element and the upper surface side of a board | substrate with a semiconductor sealing material.

  Here, a plurality of semiconductor elements are taken out from one semiconductor wafer by repeatedly performing the steps after the pick-up step in the manufacturing method of the semiconductor device, thereby manufacturing the plurality of semiconductor devices. The In addition, since the steps after the mounting step using the semiconductor element obtained by singulation are repeatedly performed, it is necessary to prepare a plurality of substrates, and the steps can be complicated. For these reasons, after the obtained semiconductor element is transferred, the steps after the mounting step may be performed in different lines, that is, in different places.

  Therefore, the following proposal has been made for the purpose of more efficiently carrying out the steps after the mounting step and further smoothly carrying the semiconductor element to different locations. That is, the semiconductor element picked up in the pickup process is repeatedly arranged on the adhesive tape (shipping tape) for transferring the semiconductor element, and the obtained semiconductor elements are rearranged (attached). It has been proposed to transfer the transfer adhesive tape to different lines or locations.

  However, in recent years, the number of semiconductor elements obtained from one semiconductor wafer tends to increase due to the increased size of the semiconductor wafer. Therefore, the time (arrangement time) for rearranging a plurality of semiconductor elements on the adhesive tape for transferring semiconductor elements is increasing. As a result, the time when the semiconductor element is adhered to the adhesive layer of the adhesive tape for transferring the semiconductor element is the semiconductor element that is transferred to the mounting process at the beginning, and the semiconductor element that is transferred to the mounting process at the end. And it will be very different. In particular, such a tendency is more prominent when the semiconductor device manufacturing is interrupted halfway and carried over from the next day.

  Therefore, in the semiconductor element transferred to the mounting process in the first part and the semiconductor element transferred to the mounting process in the last part, the adhesive force that the semiconductor element is held on the adhesive tape for transferring the semiconductor element by the adhesive layer There is a difference. Due to this difference in adhesive strength, there has been a problem that the semiconductor element cannot be stably picked up from the adhesive tape for transferring the semiconductor element.

JP 2009-245989 A

In the present invention (first invention), after rearranging a plurality of semiconductor elements obtained by separating a semiconductor wafer affixed to a semiconductor wafer processing adhesive tape into a semiconductor element transfer adhesive tape Another object of the present invention is to provide an adhesive tape set capable of stably picking up such a semiconductor element from the adhesive tape for transferring the semiconductor element regardless of the arrangement time on the adhesive tape for transferring the semiconductor element.
Moreover, this invention (2nd invention) fixed the several semiconductor element obtained by separating the wafer for semiconductors fixed to the adhesive tape for wafer processing for semiconductors into the adhesive tape for semiconductor element transfer. To provide a semiconductor element transfer adhesive tape capable of stably picking up each semiconductor element fixed to the semiconductor element transfer adhesive tape regardless of the arrangement time on the semiconductor element transfer adhesive tape. is there.

Such an object is achieved by the present invention described in the following (1) to (13).
(1) A semiconductor wafer processing pressure-sensitive adhesive tape comprising a first laminate comprising a first base material in the form of a sheet containing a resin material and a first pressure-sensitive adhesive layer laminated on the first base material. When,
A pressure-sensitive adhesive tape for transferring a semiconductor element constituted by a second laminate comprising a second base material in the form of a sheet containing a resin material and a second pressure-sensitive adhesive layer laminated on the second base material, An adhesive tape set comprising at least one sheet,
The adhesive tape set, wherein a contact angle of hexadecane with respect to the first adhesive layer is 10 ° or more, and a contact angle of hexadecane with respect to the second adhesive layer is less than 10 °.

  (2) When the contact angle of hexadecane with respect to the first adhesive layer is A [°] and the contact angle of hexadecane with respect to the second adhesive layer is B [°], the relationship 20 ° ≦ AB is satisfied. The adhesive tape set according to (1) above.

  (3) The contact angle of pure water with respect to the first adhesive layer is 90 ° or less, and the contact angle of pure water with respect to the second adhesive layer is more than 90 ° (1) or (2) Adhesive tape set described in 1.

  (4) The pressure-sensitive adhesive tape set according to any one of (1) to (3), wherein the second pressure-sensitive adhesive layer contains a surfactant.

(5) The semiconductor wafer processing pressure-sensitive adhesive tape is used to obtain a plurality of semiconductor elements formed by separating a semiconductor wafer attached to the semiconductor wafer processing pressure-sensitive adhesive tape,
The semiconductor element transfer adhesive tape is any one of the above (1) to (4) used for rearranging, moving and storing the semiconductor elements picked up from the semiconductor wafer processing adhesive tape Crab adhesive tape set.

  (6) Each of the semiconductor elements picked up from the semiconductor wafer processing adhesive tape is in a state in which a part of the first adhesive layer remains on the surface side in contact with the first adhesive layer. The adhesive tape set according to (5), which is attached to the second adhesive layer provided in the adhesive tape for transferring a semiconductor element.

(7) An adhesive tape for transferring a semiconductor element, which is composed of a laminate including a base material in the form of a sheet containing a resin material and an adhesive layer laminated on the base material, and is used for fixing a semiconductor element. Because
The semiconductor element is fixed to the semiconductor element transfer adhesive tape on the non-formation surface side where no circuit is formed, and when the semiconductor element is obtained by dividing the semiconductor wafer into pieces on the non-formation surface, A resin material having adhesiveness derived from an adhesive tape for processing a semiconductor wafer used for fixing the semiconductor wafer is attached,
The contact angle of hexadecane with respect to the non-forming surface to which the resin material derived from the adhesive tape for wafer processing for semiconductor is attached is H [°], and the contact angle of hexadecane with respect to the adhesive layer provided in the adhesive tape for transferring semiconductor elements. The adhesive tape for transporting a semiconductor element satisfies a relationship of 20 ° ≦ H−B, where B [°].

  (8) The semiconductor element transfer adhesive according to (7), wherein the contact angle H of hexadecane with respect to the non-formed surface to which the resin material derived from the semiconductor wafer processing adhesive tape is attached is 10 ° or more. tape.

  (9) The adhesive tape for transferring a semiconductor element according to (7) or (8), wherein the contact angle B of hexadecane with respect to the adhesive layer included in the adhesive tape for transferring a semiconductor element is less than 10 °.

  (10) The contact angle of pure water with respect to the non-formed surface to which the resin material derived from the adhesive tape for wafer processing for semiconductor is attached is I [°], and the adhesive layer included in the adhesive tape for transferring semiconductor elements is The adhesive tape for transferring a semiconductor element according to any one of the above (7) to (9), wherein the contact angle of pure water is D [°] and satisfies the relationship of 55 ° ≦ D-I.

  (11) The contact angle I of pure water with respect to the non-formed surface to which the resin material derived from the adhesive tape for processing a semiconductor wafer is attached is 50 ° or less, according to any one of the above (7) to (10) The adhesive tape for semiconductor element transfer of description.

  (12) The contact angle D of pure water with respect to the adhesive layer provided in the adhesive tape for transporting semiconductor elements is more than 90 °, and the adhesive tape for transporting semiconductor elements according to any one of (7) to (11).

  (13) The adhesive tape for transferring a semiconductor element according to any one of (7) to (12), wherein the adhesive layer included in the adhesive tape for transferring a semiconductor element contains a surfactant.

  According to the pressure-sensitive adhesive tape set of the present invention comprising the semiconductor wafer processing pressure-sensitive adhesive tape and the semiconductor element transfer pressure-sensitive adhesive tape, the semiconductor element picked up from the semiconductor wafer processing pressure-sensitive adhesive tape includes the semiconductor element transfer pressure-sensitive adhesive tape. It is rearranged and stuck on the second adhesive layer. During this rearrangement, it is conceivable that a part of the first adhesive layer adheres (remains) to the side of the semiconductor element that has been in contact with the first adhesive layer.

  Here, in the present invention, the contact angle of hexadecane with respect to the first adhesive layer is 10 ° or more, and the contact angle of hexadecane with respect to the second adhesive layer is less than 10 °. Therefore, the semiconductor element can be stably picked up regardless of the arrangement time from the semiconductor wafer processing adhesive tape to the semiconductor element transfer adhesive tape.

  Moreover, in this invention, the semiconductor element picked up from the adhesive tape for wafer processing for semiconductors is stuck and fixed to the adhesive layer with which the adhesive tape for semiconductor element transfer is provided. The semiconductor element is fixed to the semiconductor wafer processing adhesive tape and the semiconductor element transfer adhesive tape on the non-formation surface side where no circuit is formed. For this reason, fixing the semiconductor element to the adhesive tape for transferring the semiconductor element is carried out in a state where an adhesive resin material derived from the adhesive tape for wafer processing for semiconductor is attached to this non-formed surface.

  Here, in this invention, the contact angle of the hexadecane with respect to the non-formation surface to which the resin material derived from the adhesive tape for wafer processing for semiconductors adhered is H [°], and the hexadecane of the adhesive layer included in the adhesive tape for transferring semiconductor elements is When the contact angle is B [°], the relationship 20 ° ≦ H−B is satisfied. Therefore, it is possible to stably pick up the semiconductor element regardless of the arrangement time on the adhesive tape for transferring the semiconductor element.

FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured by applying the adhesive tape set of the present invention (and the adhesive tape for transferring a semiconductor element of the present invention). FIG. 2 is a longitudinal sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape set of the present invention (and the adhesive tape for transferring a semiconductor element of the present invention). FIG. 3 is a longitudinal sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape set of the present invention (and the adhesive tape for transferring a semiconductor element of the present invention). 4 is a longitudinal sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape set of the present invention (and the adhesive tape for transferring a semiconductor element of the present invention). FIG. 5 shows an embodiment of a semiconductor wafer processing pressure-sensitive adhesive tape provided in the pressure-sensitive adhesive tape set of the present invention, and the semiconductor device shown in FIG. 1 when manufactured using the semiconductor element transfer pressure-sensitive adhesive tape of the present invention. It is a longitudinal cross-sectional view which shows an example of the adhesive tape for wafer processing for semiconductors. FIG. 6 is a longitudinal sectional view showing an embodiment of the transfer adhesive tape (and the semiconductor element transfer adhesive tape of the present invention) included in the adhesive tape set of the present invention.

Hereinafter, the adhesive tape set of the present invention (first invention) will be described in detail. The semiconductor device transfer adhesive tape of the present invention (second invention) will be described in detail after the description of the first invention.
First, prior to describing the adhesive tape set of the present invention, a semiconductor device manufactured using the adhesive tape set of the present invention will be described.

<Semiconductor device>
FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured by applying the adhesive tape set of the present invention (and the adhesive tape for transferring a semiconductor element of the present invention). In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

  The semiconductor device 10 shown in FIG. 1 encapsulates a semiconductor chip (semiconductor element) 20, an interposer (substrate) 30 that supports the semiconductor chip 20, a plurality of conductive bumps (terminals) 70, and the semiconductor chip 20. It has a mold part (sealing part) 17 to be stopped.

  The interposer 30 is an insulating substrate and is made of various resin materials such as polyimide resin, epoxy resin, cyanate resin, and bismaleimide triazine resin (BT resin). The plan view shape of the interposer 30 is usually a square such as a square or a rectangle.

  On the upper surface (one surface) of the interposer 30, for example, a terminal 41 made of a conductive metal material such as copper is provided in a predetermined shape.

  The interposer 30 is formed with a plurality of vias (through holes: through holes) (not shown) penetrating in the thickness direction.

  Each bump 70 has one end (upper end) electrically connected to a part of the terminal 41 via each via, and the other end (lower end) protruding from the lower surface (the other surface) of the interposer 30. Yes.

  A portion of the bump 70 protruding from the interposer 30 has a substantially spherical shape (Ball shape).

  The bumps 70 are mainly composed of a brazing material such as solder, silver brazing, copper brazing, or phosphor copper brazing.

  A terminal 41 is formed on the interposer 30. A terminal 21 included in the semiconductor chip 20 is electrically connected to the terminal 41 via a connection portion 81.

  In the present embodiment, as shown in FIG. 1, the terminal 21 is configured to protrude from the lower surface (surface on which a circuit is formed) of the semiconductor chip 20, and the terminal 41 is also connected to the interposer 30. It has a protruding configuration.

  The gap between the semiconductor chip 20 and the interposer 30 is filled with an underfill material made of various resin materials. The sealing layer 80 is formed by curing the underfill material. That is, the cured product of the underfill material is the sealing layer 80. The sealing layer 80 has a function of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and a function of preventing entry of foreign matter, moisture, and the like into the gap.

  Further, a mold part 17 is formed on the upper side of the interposer 30 so as to cover the semiconductor chip 20 and the interposer 30. The mold part 17 is comprised with the hardened | cured material of the semiconductor sealing material. As a result, the semiconductor chip 20 is sealed in the semiconductor device 10 and entry of foreign matter, moisture, or the like into the semiconductor chip 20 is prevented.

  The semiconductor device 10 having such a configuration is obtained by, for example, a semiconductor device manufacturing method using the adhesive tape set of the present invention including an adhesive tape for semiconductor wafer processing (dicing tape) and an adhesive tape for transferring semiconductor elements (shipping tape). It is manufactured as follows.

<Method for Manufacturing Semiconductor Device>
2 to 4 are longitudinal sectional views for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape set of the present invention (and the adhesive tape for transferring a semiconductor element of the present invention). In the following description, the upper side in FIGS. 2 to 4 is referred to as “upper” and the lower side is referred to as “lower”.

  [1A] First, a semiconductor constituted by a laminated body (first laminated body) having a base material 4 (first base material) and an adhesive layer 2 (first adhesive layer) laminated on the upper surface of the base material 4. Wafer processing adhesive tape 100 (hereinafter, also simply referred to as “processing adhesive tape 100”) is prepared (see FIG. 2A). In FIG. 2A, a predetermined region (for example, an annular region in plan view) of the adhesive layer 2 is removed so that the adhesive layer 2 includes the outer peripheral portion 121 and the center portion 122.

  This processing pressure-sensitive adhesive tape 100 is provided in the pressure-sensitive adhesive tape set of the present invention, and is used for obtaining the semiconductor chip 20. That is, the semiconductor chip 20 can be obtained by separating the semiconductor wafer 7 into pieces while the semiconductor wafer 7 is stuck (fixed) to the processing adhesive tape 100. Detailed description thereof will be given later.

  [2A] Next, as shown in FIG. 2B, the processing adhesive tape 100 is placed on a dicer table (not shown). Also, as shown in FIG. 2B, the surface of the semiconductor wafer 7 where the circuit of the semiconductor chip is not formed (non-formed surface) and the central portion 122 of the adhesive layer 2 are in contact with each other. The wafer 7 is placed on the adhesive layer 2 and lightly pressed, and the semiconductor wafer 7 is laminated (attached) to the adhesive tape 100 (attachment step).

  Alternatively, the semiconductor wafer 7 may be attached in advance to the processing adhesive tape 100 and then placed on the dicer table.

  Usually, the diameter of the semiconductor wafer 7 is about 6 inches or more and 12 inches or less, and the thickness thereof is about 100 μm or more and 600 μm or less.

  [3A] Next, the outer peripheral portion 121 (edge portion) of the adhesive layer 2 is fixed by the cylindrical wafer ring 9. Thereafter, the semiconductor wafer 7 is cut (diced) using a dicing saw (blade) (not shown) to separate the semiconductor wafer 7 into individual pieces, thereby obtaining a plurality of semiconductor chips 20 (individualization step; FIG. 2 (c).)

  At this time, the processing pressure-sensitive adhesive tape 100 has a buffering action, and prevents cracking, chipping and the like when the semiconductor wafer 7 is cut.

  Further, the cutting of the semiconductor wafer 7 using the dicing blade is performed so that the dicing blade reaches halfway in the thickness direction of the substrate 4 as shown in FIG. Thereby, the semiconductor wafer can be surely separated.

  At this time, for the purpose of preventing the dust generated during the cutting of the semiconductor wafer 7 from being scattered and further suppressing the semiconductor wafer 7 from being unnecessarily heated, it is usually used for a semiconductor. The semiconductor wafer 7 is cut while supplying cutting water to the wafer 7.

  Generally, the thickness of the wafer ring 9 is about 1.0 mm or more and 1.5 mm or less.

[4A] Next, the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 is lowered by applying energy to the adhesive layer 2 included in the processing adhesive tape 100 (energy applying step).
Thereby, it will be in the state which peeling arises between the adhesion layer 2 and the wafer 7 for semiconductors.

  Although it does not specifically limit as a method to provide energy to the adhesion layer 2, For example, the method of irradiating an energy ray to the adhesion layer 2, the method of heating the adhesion layer 2, etc. are mentioned. Among these, the method of irradiating the adhesive layer 2 with energy rays is preferable, and the method of irradiating the adhesive layer 2 with energy rays from the substrate 4 side of the processing adhesive tape 100 is more preferable.

  Such a method does not require the semiconductor chip 20 to go through an unnecessary thermal history, and energy can be imparted to the adhesive layer 2 relatively easily and efficiently, so it is preferably used as a method for imparting energy. It is done.

  Examples of energy rays include particle rays such as ultraviolet rays, electron beams, and ion beams, and two or more of these energy rays can be used in combination. Among these, ultraviolet rays are particularly preferable. By using ultraviolet rays, the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 can be efficiently reduced.

  [5A] Next, the processing pressure-sensitive adhesive tape 100 is radially expanded by an expanding device (not shown), and the separated semiconductor wafers 7 (semiconductor chips 20) are opened at regular intervals (expanding step; FIG. 2 (d) )reference.). Through the expanding process, the semiconductor chips 20 are separated from each other at regular intervals. Thereafter, the semiconductor chip 20 is pushed up using a needle or the like, and in this state, the semiconductor chip 20 is picked up by suction or the like using a vacuum collet or air tweezers (pickup step; see FIG. 2E).

  [6A] Next, the substrate 204 (second substrate) and a laminate (second laminate) having the adhesive layer 202 (second adhesive layer) laminated on the upper surface of the substrate 204 were configured. A semiconductor element transfer adhesive tape 200 (hereinafter sometimes simply referred to as “transfer adhesive tape 200”) is prepared. After fixing the wafer ring 9 to the outer peripheral portion of the transfer adhesive tape 200, as shown in FIG. 3 (a), it is placed on a table (not shown). Thereafter, the semiconductor chip 20 is placed on the adhesive layer 202 and pressed lightly so that the surface (non-formed surface) on the side where the circuit of the semiconductor chip 20 is not formed and the adhesive layer 202 are in contact with each other. The semiconductor chip 20 is laminated (applied) to the transfer adhesive tape 200 (applying step).

  By sticking the semiconductor chip 20 to the transfer adhesive tape 200 repeatedly, a plurality of semiconductor chips 20 obtained by separating the semiconductor wafer 7 into pieces are transferred to the transfer adhesive tape. Rearrange to 200.

  At this time, the holding force (adhesive strength) of the semiconductor chip 20 by the adhesive layer 202 is preferably 10 cN / 25 mm or more and 200 cN / 25 mm or less, and more preferably 35 cN / 25 mm or more and 100 cN / 25 mm or less. Thereby, when the semiconductor chip 20 is moved / stored in the next step [7A], it is possible to accurately suppress or prevent the semiconductor chip 20 from being detached from the adhesive layer 202 in the sealed space 255.

  This transfer adhesive tape 200 is provided in the adhesive tape set of the present invention, and is used for rearranging, moving and storing the semiconductor chip 20. That is, the semiconductor chip 20 picked up from the processing adhesive tape 100 is rearranged on the transfer adhesive tape 200 and moved and stored. Detailed description thereof will be given later.

  [7A] Next, as shown in FIG. 3B, the protective adhesive tape is applied to the upper surface of the wafer ring 9 fixed to the transfer adhesive tape 200 (the opposite side of the transfer adhesive tape 200 in the wafer ring 9). Affix 300. Thereby, the rearranged semiconductor chip 20 is accommodated in the formed sealed space 255.

  Then, while maintaining this state, the semiconductor chip 20 is moved to a different line where the steps after the next step [8A] located at different locations are performed. Further, the semiconductor chip 20 may be stored while maintaining this state before and after the movement.

[8A] Next, the protective adhesive tape 300 is peeled off from the wafer ring 9, and then energy is applied to the adhesive layer 202 included in the transfer adhesive tape 200, thereby allowing the adhesive layer 202 to adhere to the semiconductor wafer 7. (Energy application process).
As a result, peeling occurs between the adhesive layer 202 and the semiconductor chip 20.

  The method for applying energy to the adhesive layer 202 is the same as the method for applying energy to the adhesive layer 2 described in the step [4A].

  At this time, the holding force (adhesive force) of the semiconductor chip 20 by the adhesive layer 202 is preferably 2 cN / 25 mm or more and 25 cN / 25 mm or less, and more preferably 5 cN / 25 mm or more and 20 cN / 25 mm or less. Thereby, the pick-up of the semiconductor chip 20 in the next step [9A] can be carried out smoothly with high accuracy.

  Further, the adhesive force between the adhesive layer 202 and the semiconductor chip 20 is large enough to cause separation between the adhesive layer 202 and the semiconductor chip 20 even before energy is applied to the adhesive layer 202. In some cases, application of energy to the adhesive layer 202 can be omitted.

  [9A] Next, as shown in FIG. 3C, the semiconductor chip 20 on the transfer adhesive tape 200 is pushed up using a needle or the like, and in this state, suction by a vacuum collet or air tweezers is used. Pick up by (pickup process).

  [10A] Next, the picked-up semiconductor chip 20 is transferred from a vacuum collet or air tweezers to a mounting probe or the like and turned upside down. Thereafter, as shown in FIG. 4A, the terminal 21 provided in the semiconductor chip 20 and the terminal 41 provided in the interposer 30 are opposed to each other via a solder bump 85 provided on the terminal 41, and the interface The semiconductor chip 20 is provided above the positioner 30. That is, the semiconductor chip (semiconductor element) 20 is provided above the interposer (substrate) 30 with the surface of the semiconductor chip 20 in contact with the processing adhesive tape 100 facing upward.

  [11A] Next, as shown in FIG. 4B, the interposer 30 and the semiconductor chip 20 are brought close to each other while heating the solder bumps 85 interposed between the terminals 21 and 41.

  As a result, the melted solder bump 85 comes into contact with both the terminal 21 and the terminal 41 and is cooled in this state, whereby the connection portion 81 is formed. As a result, the terminal 21 and the terminal are connected via the connection portion 81. 41 is electrically connected (mounting step; see FIG. 4C).

  [12A] Next, a gap formed between the semiconductor chip 20 and the interposer 30 is filled with an underfill material (sealing material) made of various resin materials. By hardening, the sealing layer 80 comprised with the hardened | cured material of the underfill material is formed (sealing layer formation process; refer FIG.4 (d)).

  [13A] Next, the mold part 17 is formed on the upper side of the interposer 30 so as to cover the semiconductor chip 20 and the interposer 30. Thereby, the semiconductor chip 20 is sealed by the interposer 30 and the mold part 17. Further, bumps 70 electrically connected to a part of the terminals 41 through vias provided in the interposer 30 are formed so as to protrude from the lower side of the interposer 30 (see FIG. 4E).

  Here, sealing by the mold part 17 may be performed as follows. For example, a mold having an internal space corresponding to the shape of the mold part 17 to be formed is prepared. The semiconductor chip 20 and the interposer 30 are arranged in the internal space, and a semiconductor sealing material in powder form is filled into the internal space so as to cover them. In this state, the semiconductor sealing material is cured by heating to form a mold portion 17 that is a cured product of the semiconductor sealing material. Thereby, sealing by the mold part 17 is performed.

  The semiconductor device 10 is obtained by the method for manufacturing a semiconductor device having the steps as described above. More specifically, after the steps [1A] to [13A] are performed, the steps [9A] to [13A] are repeatedly performed, so that a plurality of semiconductor devices 10 are collectively collected from one semiconductor wafer 7. Can be manufactured.

  Hereinafter, the semiconductor wafer processing pressure-sensitive adhesive tape 100 and the transfer pressure-sensitive adhesive tape 200 that are provided in the pressure-sensitive adhesive tape set of the present invention used in the method for manufacturing the semiconductor device 10 will be described.

  As shown in FIG. 5, the semiconductor wafer processing adhesive tape 100 includes a base material 4 (first base material) and an adhesive layer 2 (first surface) laminated on the upper surface (one surface) of the base material 4. 1 adhesive layer) and a laminated body (first laminated body). As shown in FIG. 6, the transfer adhesive tape 200 includes a base material 204 (second base material) and an adhesive layer 202 (second adhesive layer) laminated on the upper surface of the base material 204 (second base material). And a laminated body (second laminated body). The constituent materials contained in the pressure-sensitive adhesive layer 2 and the pressure-sensitive adhesive layer 202 are different so that the contact angle of hexadecane with the pressure-sensitive adhesive layer 2 is 10 ° or more and the contact angle of hexadecane with the pressure-sensitive adhesive layer 202 is less than 10 °. Except for this difference, the processing adhesive tape 100 and the transfer adhesive tape 200 have the same configuration. For this reason, below, except for this different point, the processing adhesive tape 100 will be described as a representative.

<Semiconductor wafer processing adhesive tape>
FIG. 5 shows an embodiment of a semiconductor wafer processing adhesive tape and a semiconductor wafer processing adhesive used when the semiconductor device shown in FIG. 1 is manufactured using the semiconductor element transfer adhesive tape of the present invention. It is a longitudinal cross-sectional view which shows an example of a tape. In the following description, the upper side in FIG. 5 is referred to as “upper” and the lower side is referred to as “lower”.

  The processing pressure-sensitive adhesive tape 100 is constituted by a laminate including a base material 4 in the form of a sheet containing a resin material and an adhesive layer 2 laminated on the upper surface (one surface) of the base material 4. Hereinafter, the base material 4 and the adhesive layer 2 will be described.

  The processing adhesive tape 100 has a function of reducing the adhesiveness of the adhesive layer 2 to the semiconductor wafer 7 by applying energy to the adhesive layer 2. Further, the transfer adhesive tape 200 has a function of reducing the adhesiveness of the adhesive layer 202 to the semiconductor chip 20 by applying energy to the adhesive layer 202. Examples of a method for applying energy to the pressure-sensitive adhesive layer 2 include a method of irradiating the pressure-sensitive adhesive layer 2 with energy rays and a method of heating the pressure-sensitive adhesive layer 2. Among these, since it is not necessary for the semiconductor chip 20 to go through an unnecessary heat history, a method of irradiating the adhesive layer 2 with energy rays is preferably used. Therefore, below, the case where the said adhesiveness falls by irradiation of an energy ray as the adhesion layer 2 is demonstrated as a representative.

<Substrate 4>
The base material 4 is mainly made of a resin material, has a sheet shape, and has a function of supporting the adhesive layer 2 provided on the base material 4. Moreover, the base material 4 can implement | achieve the expansion | extension with respect to the surface direction of the adhesive tape 100 for a process using the expanding apparatus in the said process [5A].

  The resin material is not particularly limited, and for example, polyethylene such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, and ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolymer. Polypropylenes such as polypropylene, polyvinyl chloride, polybutene, polybutadiene, polymethylpentene, polyisobutylene, and other polyolefin resins (olefin polymers), ethylene-vinyl acetate copolymers, zinc ion crosslinked products, sodium ion crosslinked products Such as ionomer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-propylene copolymer, ethylene-butene copolymer, ethylene-hexe Olefin copolymers such as copolymers, Polyester resins (ester polymers) such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polybutylene naphthalate, polyurethane, polyimide, polyamide, polyetheretherketone Polyolefin ketone, polyethersulfone, polystyrene, fluororesin, silicone resin, cellulose resin, styrene thermoplastic elastomer (styrene polymer), olefin thermoplastic elastomer such as polypropylene thermoplastic elastomer Molecules), acrylic resins, polyester-based thermoplastic elastomers, polyvinyl isoprene, polycarbonate (carbonate-based polymers), and other thermoplastic resins, Compound is used. Among these, an ester polymer, a styrene polymer, an olefin polymer, a carbonate polymer, an ionomer, or a copolymer containing at least one of these polymers is preferable.

  Since these resin materials are materials that can transmit energy rays such as light (visible light, near infrared rays, ultraviolet rays), X-rays, and electron beams, the energy rays are transmitted through the substrate 4 from the substrate 4 side. Thus, it can be preferably used when the adhesive layer 2 is irradiated. Therefore, the semiconductor chip 20 can be easily picked up by reducing the adhesiveness of the adhesive layer 2 by irradiating the adhesive layer 2 with energy rays from the base 4 side.

  In particular, as the resin material, it is preferable to use a mixture of polypropylene and an elastomer or a mixture of polyethylene and an elastomer.

  Further, as this elastomer, a block copolymer (styrene-isoprene block copolymer: SIS) composed of a polystyrene segment represented by the following general formula (1) and a vinyl polyisoprene segment represented by the following general formula (2): ) Is preferred.

（一般式（１）中、ｎは２以上の整数を表す。）

(In general formula (1), n represents an integer of 2 or more.)

（一般式（２）中、ｎは２以上の整数を表す。）

(In general formula (2), n represents an integer of 2 or more.)

  Moreover, it is preferable that the base material 4 contains the electroconductive material which has electroconductivity. By including such a conductive material, the conductive material exhibits a function as an antistatic agent, and in the individualization step [3A] and the pickup steps [5A] and [9A], The generation of static electricity in the semiconductor chip 20 can be accurately suppressed or prevented.

  The conductive material is not particularly limited as long as it has conductivity. Examples thereof include surfactants, permanent antistatic polymers (IDP), metal materials, metal oxide materials, and carbon-based materials. Among these, one kind or a combination of two or more kinds can be used.

  Among these, examples of the surfactant include an anionic surfactant, a cationic surfactant, a nonionic surfactant, and an amphoteric surfactant.

  As the permanent antistatic polymer (IDP), for example, all IDPs such as polyether and polyolefin block polymer series, polyesteramide series, polyesteramide, polyetheresteramide, and polyurethane series can be used.

  In addition, examples of the metal material include gold, silver, copper, silver-coated copper, nickel, and the like, and these metal powders are preferably used.

Examples of the metal oxide material include indium tin oxide (ITO), indium oxide (IO), antimony tin oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO ₂ ), and zinc oxide (ZnO). These metal oxide powders are preferably used.

  Furthermore, examples of the carbon-based material include carbon nanotubes such as carbon black, single-walled carbon nanotubes, and multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, and graphene.

  Furthermore, the base material 4 includes softeners such as mineral oil, fillers such as calcium carbonate, silica, talc, mica, and clay, antioxidants, light stabilizers, lubricants, dispersants, neutralizers, colorants, and the like. May be contained.

  Although the average thickness of the base material 4 is not specifically limited, For example, it is preferable that they are 10 micrometers or more and 300 micrometers or less, It is more preferable that they are 30 micrometers or more and 200 micrometers or less, It is more preferable that they are 80 micrometers or more and 200 micrometers or less. When the average thickness of the substrate 4 is within this range, the dicing of the semiconductor wafer 7 in the step [3A] can be performed with excellent workability. Moreover, in the transfer adhesive tape 200, the semiconductor chip 20 fixed via the adhesive layer 202 can be reliably supported when the average thickness of the base material 204 is within this range.

  Furthermore, it is preferable that the functional group such as a hydroxyl group or an amino group that is reactive with the constituent material contained in the adhesive layer 2 is exposed on the surface of the substrate 4.

  Moreover, the base material 4 may be comprised by the laminated body (multilayer body) which laminated | stacked the layer comprised by the said different resin material. Furthermore, it may be composed of a blend film obtained by dry blending the resin material.

<Adhesive layer>
The adhesive layer 2 has a function of adhering and supporting the semiconductor wafer 7 when dicing the semiconductor wafer 7 in the step [3A]. Moreover, the adhesiveness of the adhesive layer 2 with respect to the semiconductor wafer 7 is lowered by applying energy to the adhesive layer 2. Thereby, it will be in the state which can produce peeling easily between the adhesion layer 2 and the wafer 7 for semiconductors. In the transfer adhesive tape 200, the adhesive layer 202 has a function of adhering and supporting the semiconductor chip 20 when the semiconductor chip 20 is transferred and stored. Further, by applying energy to the adhesive layer 202, the adhesiveness of the adhesive layer 202 to the semiconductor chip 20 is lowered. Thereby, it will be in the state which can produce peeling between the adhesion layer 202 and the semiconductor chip 20 easily.

  The pressure-sensitive adhesive layer 2 having such a function is composed of a resin composition containing (1) a base resin having adhesiveness and (2) a curable resin for curing the pressure-sensitive adhesive layer 2 as main materials.

Hereinafter, each component contained in the resin composition will be described sequentially.
(1) Base resin The base resin has adhesiveness, and is included in the resin composition in order to impart adhesiveness to the semiconductor wafer 7 to the adhesive layer 2 before the adhesive layer 2 is irradiated with energy rays. It is. In the transfer adhesive tape 200, the base resin is included in the resin composition in order to impart adhesiveness to the semiconductor chip 20 to the adhesive layer 202 before the adhesive layer 202 is irradiated with energy rays.

  Such base resins include acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), and polyvinyl ether resins (adhesives). And known base resins used as adhesive layer components such as styrene elastomer resins (adhesives), polyisoprene resins (adhesives), polyisobutylene resins (adhesives) or urethane resins (adhesives). It is done. Among these, it is preferable to use an acrylic resin. Acrylic resins are preferably used as base resins because they are excellent in heat resistance and are relatively easy and inexpensive to obtain.

  The base polymer of the acrylic resin is a polymer (homopolymer or copolymer) whose main component is a (meth) acrylic acid ester.

  Although it does not specifically limit as (meth) acrylic acid ester, For example, (meth) acrylic acid methyl, (meth) acrylic acid ethyl, (meth) acrylic acid propyl, (meth) acrylic acid isopropyl, (meth) acrylic acid butyl , Isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, (meth) Octyl acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, (meth ) Undecyl acrylate, dodecyl (meth) acrylate, tri (meth) acrylate (Meth) acrylic acid alkyl esters such as syl, (meth) acrylic acid tetradecyl, (meth) acrylic acid pentadecyl, (meth) acrylic acid hexadecyl, (meth) acrylic acid heptadecyl, (meth) acrylic acid octadecyl, (meth) Examples include (meth) acrylic acid cycloalkyl esters such as cyclohexyl acrylate, (meth) acrylic acid aryl esters such as phenyl (meth) acrylate, and one or more of these are used in combination. be able to. Among these, (meth) acrylic acid alkyl esters such as methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and octyl (meth) acrylate It is preferable that The (meth) acrylic acid alkyl ester is particularly excellent in heat resistance, and can be obtained relatively easily and inexpensively.

  In the present specification, the term “(meth) acrylic acid ester” is used to mean including both an acrylic acid ester and a methacrylic acid ester.

  The acrylic resin preferably has a glass transition point of 20 ° C. or lower. Thereby, the adhesiveness excellent in the adhesive layer 2 can be exhibited before the energy layer is irradiated to the adhesive layer 2.

  The acrylic resin can contain a copolymerizable monomer as a monomer component constituting the polymer, if necessary, for the purpose of modifying cohesive force, heat resistance and the like.

  Such a copolymerizable monomer is not particularly limited. For example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, (meth) Hydroxyl group-containing monomers such as 6-hydroxyhexyl acrylate, epoxy group-containing monomers such as glycidyl (meth) acrylate, (meth) acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid Carboxyl group-containing monomers, maleic anhydride, acid anhydride group-containing monomers such as itaconic anhydride, (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol ( (Meth) acrylamide, N-methylolpropane (meth) Amyl monomers such as chloramide, N-methoxymethyl (meth) acrylamide, N-butoxymethyl (meth) acrylamide, aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, (meth) Amino group-containing monomers such as t-butylaminoethyl acrylate, cyano group-containing monomers such as (meth) acrylonitrile, olefinic monomers such as ethylene, propylene, isoprene, butadiene and isobutylene, styrene, α-methylstyrene, Styrene monomers such as vinyl toluene, vinyl ester monomers such as vinyl acetate and vinyl propionate, vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether, halogens such as vinyl chloride and vinylidene chloride Atom-containing monomer, alkoxy group-containing monomer such as methoxyethyl (meth) acrylate, ethoxyethyl (meth) acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N- (meth) acryloylmorpholine, etc. Examples include monomers having a nitrogen atom-containing ring, and one or more of these can be used in combination.

  The content of these copolymerizable monomers is preferably 40% by weight or less, and more preferably 10% by weight or less, based on all monomer components constituting the acrylic resin.

  The copolymerizable monomer may be contained at the end of the main chain in the polymer constituting the acrylic resin, may be contained in the main chain, and further, the end of the main chain and the main chain. It may be contained both in the chain.

  Further, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of crosslinking between polymers.

  Examples of the multifunctional monomer include 1,6-hexanediol (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, and neopentyl glycol di (meth) acrylate. , Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, glycerin di (meth) acrylate, epoxy (meth) acrylate, polyester ( And (meth) acrylate, urethane (meth) acrylate, divinylbenzene, butyl di (meth) acrylate, hexyl di (meth) acrylate, and the like. It can be used in combination.

  In addition, ethylene-vinyl acetate copolymer and vinyl acetate polymer can also be used as copolymerizable monomer components.

  Such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. In addition, the polymerization of these monomer components can be carried out using a polymerization method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, a suspension polymerization method, or the like.

  As described above, the acrylic resin obtained by polymerizing the monomer components described above includes an acrylic resin having a carbon-carbon double bond in the side chain, main chain or terminal of the main chain (“double” It is sometimes referred to as “bond-introducing acrylic resin”. When the acrylic resin is a double bond-introducing acrylic resin, even if the addition of the curable resin described later is omitted, the obtained adhesive layer 2 is allowed to exhibit the function as the adhesive layer 2 described above. Can do.

  Such a double bond-introducing acrylic resin has one carbon-carbon double bond in each of the side chains of 1/100 or more of the side chains in the polymer constituting the acrylic resin. It is preferably a double bond-introducing acrylic resin (sometimes referred to as “double-bond side chain-introducing acrylic resin”). Thus, introducing a carbon-carbon double bond into the side chain of an acrylic resin is advantageous from the viewpoint of molecular design. In addition, this double bond side chain introduction type acrylic resin may have a carbon-carbon double bond in the main chain or at the end of the main chain.

  A method for synthesizing such a double bond-introducing acrylic resin (that is, a method for introducing a carbon-carbon double bond into the acrylic resin) is not particularly limited, and examples thereof include the following methods. . First, copolymerization is performed using a monomer having a functional group as a copolymerizable monomer to synthesize an acrylic resin containing a functional group (sometimes referred to as “functional group-containing acrylic resin”). Thereafter, a compound having a functional group capable of reacting with a functional group in the functional group-containing acrylic resin and a carbon-carbon double bond (sometimes referred to as a “carbon-carbon double bond-containing reactive compound”). Are subjected to a condensation reaction or an addition reaction in a functional group-containing acrylic resin while maintaining the energy ray curability (energy ray polymerizability) of the carbon-carbon double bond. Thereby, a double bond introduction type acrylic resin can be synthesized.

  In addition, as a control means when introducing a carbon-carbon double bond into an acrylic resin into 1/100 or more of all side chains, for example, a condensation reaction or addition to a functional group-containing acrylic resin The method etc. which are performed by adjusting suitably content of the carbon-carbon double bond containing reactive compound which is a compound made to react are mentioned.

  Moreover, when carrying out the condensation reaction or addition reaction of a carbon-carbon double bond containing reactive compound with a functional group containing acrylic resin, the said reaction can be effectively advanced by using a catalyst. Such a catalyst is not particularly limited, but a tin-based catalyst such as dibutyltin dilaurate is preferably used. The content of the tin-based catalyst is not particularly limited, but for example, it is preferably 0.05 parts by weight or more and 1 part by weight or less with respect to 100 parts by weight of the functional group-containing acrylic resin.

  Examples of the functional group A in the functional group-containing acrylic resin and the functional group B in the carbon-carbon double bond-containing reactive compound include a carboxyl group, an acid anhydride group, a hydroxyl group, an amino group, an epoxy group, and an isocyanate. Examples of the combination of the functional group A in the functional group-containing acrylic resin and the functional group B in the carbon-carbon double bond-containing reactive compound include, for example, a carboxylic acid group (carboxyl group). Group) and an epoxy group, a combination of a carboxylic acid group and an aziridine group, a combination of a hydroxyl group and an isocyanate group, and a combination of a hydroxyl group and a carboxyl group. Among these, a combination of a hydroxyl group and an isocyanate group is preferable. Thereby, the reaction tracking between these functional groups A and B can be easily performed.

  Further, in the combination of these functional groups A and B, any functional group may be the functional group A of the functional group-containing acrylic resin or the functional group B of the carbon-carbon double bond-containing reactive compound. For example, in the case of a combination of a hydroxyl group and an isocyanate group, the hydroxyl group is the functional group A in the functional group-containing acrylic resin, and the isocyanate group is a functional group in the carbon-carbon double bond-containing reactive compound. The group B is preferred.

  In this case, examples of the monomer having the functional group A constituting the functional group-containing acrylic resin include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Monomer having a carboxyl group, monomer having an acid anhydride group such as maleic anhydride, itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth) acrylic acid 4-hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethyl (Cyclohexyl) methyl (meta Hydroxyl groups such as acrylate, vinyl alcohol, allyl alcohol, 2-hydroxyethyl vinyl ether, 2-hydroxypropyl vinyl ether, 4-hydroxybutyl vinyl ether, ethylene glycol monovinyl ether, diethylene glycol monovinyl ether, propylene glycol monovinyl ether, dipropylene glycol monovinyl ether And a monomer having an epoxy group such as glycidyl (meth) acrylate and allyl glycidyl ether.

  Moreover, as a carbon-carbon double bond containing reactive compound which has the functional group B, as an example which has an isocyanate group, (meth) acryloyl isocyanate, (meth) acryloyloxymethyl isocyanate, 2- (meth) acryloyloxy is mentioned, for example. Examples include ethyl isocyanate, 2- (meth) acryloyloxypropyl isocyanate, 3- (meth) acryloyloxypropyl isocyanate, 4- (meth) acryloyloxybutyl isocyanate, m-propenyl-α, α-dimethylbenzyl isocyanate, and epoxy. Examples of the group include glycidyl (meth) acrylate.

  The acrylic resin preferably has a low content of low molecular weight substances from the viewpoint that the acrylic resin does not remain in the semiconductor chip 20 when the semiconductor chip 20 is picked up from the adhesive layer 2. In this case, the weight average molecular weight of the acrylic resin is preferably set to 300,000 to 5,000,000, more preferably set to 500,000 to 5,000,000, and further preferably set to 800,000 to 3,000,000. Note that if the weight average molecular weight of the acrylic resin is less than the lower limit value depending on the type of monomer component, etc., the anti-contamination property to the semiconductor chip 20 is reduced, and adhesive residue is left when the semiconductor chip 20 is picked up. May occur.

  The acrylic resin has a functional group (reactive functional group) having reactivity with a crosslinking agent or photopolymerization initiator, such as a hydroxyl group or a carboxyl group (particularly, a hydroxyl group). Is preferred. Thereby, since a crosslinking agent and a photoinitiator connect with the acrylic resin which is a polymer component, it can suppress or prevent that these crosslinking agents and a photoinitiator leak from the adhesion layer 2 exactly. As a result, the adhesiveness of the adhesive layer 2 to the semiconductor chip 20 is reliably reduced by energy beam irradiation.

(2) Curable resin A curable resin is equipped with the sclerosis | hardenability hardened | cured by irradiation of an energy ray, for example. As a result of the curing, the base resin is taken into the crosslinked structure of the curable resin, and as a result, the adhesive strength (adhesiveness) of the adhesive layer 2 is reduced.

  As such a curable resin, for example, a low molecular weight having at least two polymerizable carbon-carbon double bonds which can be three-dimensionally cross-linked by irradiation with energy rays such as ultraviolet rays and electron beams as functional groups. A compound is used. Specifically, for example, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, tetraethylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, 1,4-butylene glycol di (meth) ) Esterified products of (meth) acrylic acid and polyhydric alcohols such as acrylate, polyethylene glycol di (meth) acrylate, glycerin di (meth) acrylate, Cyanurate compounds having carbon-carbon double bond-containing groups such as relate oligomers, 2-propenyl-di-3-butenyl cyanurate, tris (2-acryloxyethyl) isocyanurate, tris (2-methacrylic) Roxyethyl) isocyanurate, 2-hydroxyethyl bis (2-acryloxyethyl) isocyanurate, bis (2-acryloxyethyl) 2-[(5-acryloxyhexyl) -oxy] ethyl isocyanurate, tris (1, 3-Diacryloxy-2-propyl-oxycarbonylamino-n-hexyl) isocyanurate, tris (1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl) isocyanurate, tris (4- Acryloxy-n-butyl) isocyanate Examples include isocyanurate compounds having a carbon-carbon double bond-containing group such as a rate, commercially available oligoester acrylates, aromatic and aliphatic urethane acrylates, etc., one of these Alternatively, two or more kinds can be used in combination. Among these, it is preferable that an oligomer having 6 or more functional groups is included, and an oligomer having 15 or more functional groups is more preferable. Thereby, curable resin can be hardened more reliably by irradiation of an energy ray. Moreover, it is preferable that such curable resin is urethane acrylate. Thereby, since moderate softness | flexibility can be provided to the adhesion layer 2, the effect that the paste crack at the time of pick-up can be suppressed is acquired.

  The urethane acrylate is not particularly limited. For example, a polyol compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate). A terminal isocyanate urethane prepolymer obtained by reacting naphthate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.) ) Acrylate (for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, polyethylene glycol (meth) acrylate, etc.)).

  Moreover, although it does not specifically limit to curable resin, It is preferable that 2 or more curable resin from which a weight average molecular weight differs is mixed. If such a curable resin is used, the degree of crosslinking of the resin by irradiation with energy rays can be easily controlled, and the semiconductor chip 20 can be easily picked up from the adhesive layer 2. In addition, as such a curable resin, for example, a mixture of a first curable resin and a second curable resin having a weight average molecular weight larger than that of the first curable resin may be used.

  The curable resin is preferably blended in an amount of 5 parts by weight or more and 500 parts by weight or less, more preferably 10 parts by weight or more and 300 parts by weight or less, and more preferably 20 parts by weight or more. More preferably, it is blended at 200 parts by weight or less. The semiconductor chip 20 can be easily picked up from the adhesive layer 2 by adjusting the blending amount of the curable resin as described above.

  The addition of the curable resin to the resin composition is performed when a double bond-introducing acrylic resin is used as the acrylic resin described above, that is, the carbon-carbon double bond is changed to a side chain, a main chain. If an acrylic resin in the chain or at the end of the main chain is used, it may be omitted. This is because, when the acrylic resin is a double bond-introducing acrylic resin, the adhesive layer 2 is formed by the function of the carbon-carbon double bond of the double bond-introducing acrylic resin by irradiation with energy rays. This is because the adhesive force of the pressure-sensitive adhesive layer 2 is reduced.

(3) Photopolymerization initiator In addition, the adhesive layer 2 has reduced adhesiveness to the semiconductor wafer 7 due to irradiation with energy rays. In addition, the adhesive layer 202 has reduced adhesiveness to the semiconductor chip 20 due to irradiation with energy rays. When ultraviolet rays or the like are used as the energy rays, the curable resin preferably contains a photopolymerization initiator in order to facilitate the initiation of polymerization of the curable resin.

  Examples of the photopolymerization initiator include 2,2-dimethoxy-1,2-diphenylethane-1-one, 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1 -Propan-1-one, 2-hydroxy-1- {4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl} -2-methyl-propan-1-one, benzyldiphenyl sulfide, Tetramethylthiuram monosulfide, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1 -Hydroxycyclohexyl phenyl ketone, Michler's ketone, acetophenone, methoxyacetophenone, 2, -Dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholinopropane-1, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether , Benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, dibenzyl, α-hydroxycyclohexyl phenyl ketone, benzyl dimethyl ketal, 2-hydroxymethylphenylpropane, 2-naphthalenesulfonyl chloride, 1-phenone-1,1-propanedione- 2- (o-ethoxycarbonyl) oxime, benzophenone, benzoylbenzoic acid, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone, , 4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acryloxybenzophenone, p-acryloxybenzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p- (meth) acryloxy Benzophenone-4-carboxylic acid esters of acrylates such as ethoxybenzophenone, 1,4-butanediol mono (meth) acrylate, 1,2-ethanediol mono (meth) acrylate, 1,8-octanediol mono (meth) acrylate Thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloranthraquinone, camphorquinone, halogenated ketone, acyl phosphinoxide, acyl phosphonate, polyvinyl benzophenone, chlorothioxanthone, dodecyl thioxanthone, dimethyl Examples include thioxanthone, diethylthioxanthone, 2-ethylanthraquinone, t-butylanthraquinone, 2,4,5-triallylimidazole dimer, and the like. One or more of these may be used in combination. it can.

  Among these, benzophenone derivatives and alkylphenone derivatives are preferable. These compounds have a hydroxyl group as a reactive functional group in the molecule, and can be linked to a base resin or a curable resin via this reactive functional group, thereby ensuring a more reliable function as a photopolymerization initiator. It can be demonstrated.

  The photopolymerization initiator is preferably blended in an amount of 0.1 to 50 parts by weight, more preferably 0.5 to 10 parts by weight, based on 100 parts by weight of the base resin. . By adjusting the blending amount of the photopolymerization initiator as described above, the pick-up property of the semiconductor chip 20 becomes suitable.

(4) Crosslinking agent Furthermore, the curable resin may contain a crosslinking agent. Inclusion of the crosslinking agent can improve the curability of the curable resin.

  The crosslinking agent is not particularly limited. For example, an isocyanate crosslinking agent, an epoxy crosslinking agent, a urea resin crosslinking agent, a methylol crosslinking agent, a chelate crosslinking agent, an aziridine crosslinking agent, a melamine crosslinking agent, and a polyvalent crosslinking agent. Examples include metal chelate-based crosslinking agents, acid anhydride-based crosslinking agents, polyamine-based crosslinking agents, and carboxyl group-containing polymer-based crosslinking agents. Among these, an isocyanate type crosslinking agent is preferable.

  Although it does not specifically limit as an isocyanate type crosslinking agent, For example, the trimer of the terminal isocyanate compound obtained by making the polyisocyanate compound of polyvalent isocyanate and the trimer of a polyisocyanate compound, and making a polyisocyanate compound and a polyol compound react. Or the blocked polyisocyanate compound etc. which blocked the terminal isocyanate urethane prepolymer with phenol, oximes, etc. are mentioned.

  Examples of the polyvalent isocyanate include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′-diisocyanate, diphenylmethane. -2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenyl ether diisocyanate, 4 , 4 '-[2,2-bis (4-phenoxyphenyl) propane] diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, and the like. It can be used singly or in combination of two or more of them. Among these, at least one polyisocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate and hexamethylene diisocyanate is preferable.

  The crosslinking agent is preferably blended in an amount of 0.01 to 50 parts by weight, more preferably 5 to 50 parts by weight, based on 100 parts by weight of the base resin. By adjusting the blending amount of the crosslinking agent as described above, the pick-up property from the adhesive layer 2 (adhesive layer 202) of the semiconductor chip 20 (pick-up property of the semiconductor chip 20) becomes suitable.

(5) Conductive material (antistatic agent)
Furthermore, the resin composition constituting the adhesive layer 2 preferably contains a conductive material having conductivity. By including such a conductive material, the conductive material exhibits a function as an antistatic agent, and in the individualization step [3A] and the pickup steps [5A] and [9A], Generation of static electricity in the semiconductor chip 20 is accurately suppressed or prevented.

  The conductive material is not particularly limited as long as it has conductivity. Similarly to the description of the conductive material included in the base material 4, for example, a surfactant, a permanent antistatic polymer ( IDP), metal materials, metal oxide materials, carbon-based materials, and the like, and one or more of these can be used in combination.

  In addition, when setting it as the structure which contains a conductive material in one of the base material 4 and the adhesion layer 2, it is preferable to make the base material 4 contain a conductive material. Thereby, the generation of static electricity in the semiconductor chip 20 can be more accurately suppressed or prevented without reliably attaching a conductive material to the semiconductor chip 20.

(6) Other components Furthermore, the resin composition constituting the pressure-sensitive adhesive layer 2 includes, in addition to the above-described components (1) to (5), a tackifier, an anti-aging agent, and a pressure-adjusting agent. In addition, at least one of a filler, a colorant, a flame retardant, a softener, an antioxidant, a plasticizer, a surfactant (for example, a surfactant as a leveling agent), and the like may be included.

  Of these, the tackifier is not particularly limited. For example, rosin resin, terpene resin, coumarone resin, phenol resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic copolymer petroleum Resins and the like can be mentioned, and one or more of these can be used in combination.

  Moreover, although the average thickness of the adhesion layer 2 is not specifically limited, For example, it is preferable that they are 1 micrometer or more and 30 micrometers or less, It is more preferable that they are 5 micrometers or more and 30 micrometers or less, It is further more preferable that they are 10 micrometers or more and 20 micrometers or less. By setting the average thickness of the pressure-sensitive adhesive layer 2 within such a range, the pressure-sensitive adhesive layer 2 exhibits a good adhesive force before applying energy to the pressure-sensitive adhesive layer 2 and after applying energy to the pressure-sensitive adhesive layer 2. Good peelability is exhibited between the adhesive layer 2 and the semiconductor wafer 7. In addition, by setting the average thickness of the adhesive layer 202 within such a range, the adhesive layer 202 exhibits a good adhesive force before energy is applied to the adhesive layer 202, and energy is applied to the adhesive layer 202. Later, good peelability is exhibited between the adhesive layer 202 and the semiconductor chip 20.

  In addition, the adhesion layer 2 may be comprised by the laminated body (multilayer body) which laminated | stacked the layer comprised by the said different resin composition.

  Further, the adhesive force between the adhesive layer 2 and the semiconductor chip 20 is large enough to cause separation between the adhesive layer 2 and the semiconductor chip 20 even before energy is applied to the adhesive layer 2. In some cases, (2) a curable resin, (3) a photopolymerization initiator, and (4) a crosslinker adhesive are included to provide a function of reducing the adhesive strength after energy is applied to the adhesive layer 2. Addition to the layer 2 can also be omitted.

  In each of the processing adhesive tape 100 and the transfer adhesive tape 200 having the above-described configuration, the contact angle of hexadecane with respect to the adhesive layer 2 is 10 ° or more, and the contact angle of hexadecane with respect to the adhesive layer 202 is The constituent materials included in the pressure-sensitive adhesive layer 2 and the pressure-sensitive adhesive layer 202 are selected so as to satisfy that the angle is less than 10 °. Hereinafter, these points will be described in detail.

  Here, as described above, the processing adhesive tape 100 is used to obtain the semiconductor chip 20 by separating the semiconductor wafer 7 in a state where the semiconductor wafer 7 is adhered, and the transfer adhesive tape 100 is used. 200 is used for rearranging, moving and storing the semiconductor chip 20 picked up from the processing adhesive tape 100.

  Thus, in the manufacturing method of the semiconductor device, the processing adhesive tape 100 and the transfer adhesive tape 200 are used, but the semiconductor chip 20 picked up from the processing adhesive tape 100 is in contact with the adhesive layer 2. It is considered that the adhesive layer 2 is affixed to the adhesive layer 202 of the transfer adhesive tape 200 with a part of the adhesive layer 2 adhered (remaining) on the lower surface (non-formed surface where no circuit is formed).

  Further, in the method for manufacturing a semiconductor device described above, a plurality of semiconductor devices 10 are manufactured in a lump by repeatedly performing the steps [9A] to [13A]. Therefore, as the number of semiconductor chips 20 acquired from one semiconductor wafer 7 increases, as in the case of using a semiconductor wafer 7 that is enlarged to 12 inches, a plurality of semiconductor chips 20 are transferred. The time (arrangement time) for rearranging the adhesive tape 200 for use increases. As a result, the time during which the semiconductor chip 20 is adhered to the adhesive layer 202 of the transfer adhesive tape 200 is shifted to the mounting step [10A] at the beginning and the mounting step [10A at the end. ] Is greatly different from the semiconductor chip 20 to be transferred to.

  For these reasons, the semiconductor chip 20 is transferred to the mounting step [10A] on the first side and the semiconductor chip 20 transferred to the mounting step [10A] on the last side by the adhesive layer 202. A difference arises in the adhesive force (holding force) hold | maintained at the adhesive tape 200 for transfer. Due to this difference in adhesive strength, there has been a problem that the pickup of the semiconductor chip 20 from the transfer adhesive tape 200 in the pickup step [9A] cannot be carried out stably.

  As a result of intensive studies on such problems, wetting spreadability of hexadecane to the adhesive layer 2 that is supposed to remain on the lower surface side of the semiconductor chip 20 and wettability of hexadecane to the adhesive layer 202 with which the lower surface side of the semiconductor chip 20 contacts. It has been found that the relationship with the spreadability is related to the holding force of the semiconductor chip 20 by the adhesive layer 202 and, consequently, the temporal stability of this holding force.

  As a result of further studies by the inventors, the contact angle of hexadecane with respect to the adhesive layer 2 (first adhesive layer) is set to 10 ° or more, and the contact angle of hexadecane with respect to the adhesive layer 202 (second adhesive layer) is less than 10 °. Thus, the semiconductor chip 20 can be held by the adhesive layer 202 in the sealed space 255 before the energy application step [8A], and the semiconductor chip 20 can be peeled from the adhesive layer 202 after the energy application step [8A]. In addition to the semiconductor chip 20 that can be used as the holding force, the semiconductor chip 20 picked up from the transfer adhesive tape 200 in the pick-up step [9A] is transferred to the mounting step [10A] at the beginning, On the other hand, the semiconductor chip 20 transferred to the mounting process [10A] can be stably implemented without causing a large difference. As a result, the present invention (first invention) has been completed.

  In the pickup process [9A], the semiconductor chip 20 picked up from the transfer adhesive tape 200 is transferred to the mounting step [10A] at the beginning, and the mounting step [10A] at the end. It can be inferred from the following mechanism that stable implementation can be performed without causing a large difference between the semiconductor chip 20 and the semiconductor chip 20.

  That is, when the contact angle of hexadecane with respect to the adhesive layer 2 is 10 ° or more and the contact angle of hexadecane with respect to the adhesive layer 202 is less than 10 °, the adhesive layer 2 exhibits hydrophilicity (oleophobic), 202 can be said to be hydrophobic (lipophilic). By configuring the adhesive layer 2 and the adhesive layer 202 as described above, the adhesive layer 2 is smoothly transferred to the lower surface (contact surface) side of the semiconductor chip 20, and a part of the adhesive layer 2 is formed on the lower surface of the semiconductor chip 20. In an appropriate amount, and an interaction occurs between the adhesive layer 2 remaining on the lower surface side of the semiconductor chip 20 and the adhesive layer 202 in contact with the lower surface side of the semiconductor chip 20. Can be accurately suppressed or prevented. For this reason, it is presumed that a change with time in the bonding strength between these members and, in turn, the holding force of the semiconductor chip 20 by the adhesive layer 202 is appropriately suppressed or prevented.

  Further, the contact angle of hexadecane with respect to the adhesive layer 2 may be 10 ° or more, preferably 30 ° or more and 70 ° or less, more preferably 35 ° or more and 55 ° or less, and further, the adhesive layer The contact angle of hexadecane with respect to 202 may be less than 10 °, but is preferably 3 ° or more and less than 8 °. Thus, the semiconductor chip 20 is more stably held by the adhesive layer 202 in the sealed space 255 before the energy application step [8A], and the semiconductor chip 20 is removed from the adhesive layer 202 after the energy application step [8A]. The holding force can be set to such an extent that it can be easily peeled off.

  Furthermore, when the contact angle of hexadecane with respect to the adhesive layer 2 is A [°] and the contact angle of hexadecane with respect to the adhesive layer 202 is B [°], it is preferable to satisfy the relationship of 20 ° ≦ AB, It is more preferable to satisfy the relationship of ° ≦ A−B ≦ 50 °. Thereby, it is possible to more accurately suppress or prevent the temporal change in the holding force of the semiconductor chip 20 by the adhesive layer 202 after the energy application step [8A].

  In addition to the contact angle of hexadecane with the adhesive layers 2 and 202, the contact angle of pure water with respect to the adhesive layer 2 is 90 ° or less, and the contact angle of pure water with respect to the adhesive layer 202 is more than 90 °. It is more preferable that the contact angle of pure water with respect to the adhesive layer 2 is 60 ° or more and 80 ° or less, and the contact angle of pure water with respect to the adhesive layer 202 is more than 100 ° and 120 ° or less. Furthermore, when the contact angle of pure water with respect to the adhesive layer 2 is C [°] and the contact angle of pure water with respect to the adhesive layer 202 is D, the absolute value of the difference between the contact angle C and the contact angle D is −40. It is preferable that the relationship of ° ≦ C−D ≦ −20 ° is satisfied. Thereby, it is possible to more accurately suppress or prevent the temporal change in the holding force of the semiconductor chip 20 by the adhesive layer 202 after the energy application step [8A].

  Furthermore, in order to set the contact angle of hexadecane to the adhesive layer 2 to 10 ° or more and the contact angle of hexadecane to the adhesive layer 202 to be less than 10 °, the constituent materials included in the adhesive layer 2 and the adhesive layer 202 include This can be realized by appropriately selecting the combination with the constituent materials to be prepared. In particular, the contact angle can be reliably adjusted by appropriately setting the presence or absence of a surfactant as a leveling agent and the content thereof. Specifically, the contact angle of hexadecane with respect to the layer containing the surfactant can be set lower than the contact angle of hexadecane with respect to the layer not containing the surfactant. Therefore, the contact angle B of hexadecane with respect to the adhesive layer 202 is changed to the contact angle A of hexadecane with respect to the adhesive layer 2 by making the adhesive layer 2 contain no surfactant and the adhesive layer 202 contains a surfactant. More specifically, the contact angle A can be set to 10 ° or more, and the contact angle B can be set to less than 10 °.

The surfactant that can set the contact angle of hexadecane with the adhesive layer to be low may be any of anionic, cationic and nonionic surfactants. For example, perfluoroalkylsulfone Acid (CF ₃ (CF ₂ ) _n SO ₃ H; n is an integer of 1 or more), perfluoroalkylcarboxylic acid (CF ₃ (CF ₂ ) _n COOH; n is an integer of 1 or more), fluorine telomer alcohol (F A fluorine-based surfactant (anionic surfactant) such as (CF ₂ ) _n CH ₂ CH ₂ OH; n is an integer of 1 or more is preferably used.

  Moreover, it is preferable that the retention strength (adhesive force) of the semiconductor chip 20 by the adhesive layer 202 after energy application to the adhesive layer 202 in the energy application step [8A] does not change with time. Specifically, the holding force of the adhesive layer 202 immediately after the application of energy is E [cN / 25 mm], and the holding force of the adhesive layer 202 after storage for 7 days at a temperature of 60 ° C. is F [cN / 25 mm. ], It is preferable to satisfy the relationship of F / E ≦ 2.0, and it is more preferable to satisfy the relationship of F / E ≦ 1.5. By satisfying such a relationship, it can be said that the change in the holding force of the semiconductor chip 20 by the adhesive layer 202 with time after the energy application step [8A] is suppressed. As a result, both the semiconductor chip 20 transferred to the mounting step [10A] at the first side and the semiconductor chip 20 transferred to the mounting step [10A] at the last side are transferred adhesive in the pickup step [9A]. The semiconductor chip 20 can be stably picked up from the tape 200.

  In addition, the holding force (adhesive force) of the semiconductor chip 20 by the adhesive layer 202 after energy application to the adhesive layer 202 in the energy application step [8A] is the processing adhesion to the semiconductor wafer 7 in the step [2A]. It is preferable that the tape 100 is lower than when the tape 100 is not attached. Specifically, the holding force of the adhesive layer 202 immediately after application of energy (after 0 days) is set to E [cN / 25 mm] when the processing adhesive tape 100 is applied to the semiconductor wafer 7, respectively. In the case where the sticking of the processing adhesive tape 100 to the wafer 7 is omitted, when G [cN / 25 mm], it is preferable to satisfy the relationship of E / G <1.0, and E / G ≦ 0. It is more preferable that the relationship of 8 is satisfied. By satisfying this relationship, the holding force of the semiconductor chip 20 by the adhesive layer 202 after the energy application step [8A] is effectively reduced by applying the processing adhesive tape 100 to the semiconductor wafer 7. In other words, the semiconductor chip 20 can be reliably picked up from the transfer adhesive tape 200 in the pick-up step [9A].

  The adhesive tape set of the present invention can be applied to manufacture of a flip chip ball grid array (FCBGA) type semiconductor device 10 shown in FIG. Also, for example, Small Outline Package (SOP), Small Outline J Lead Package (SOJ), Thin Small Outline Package (TSOP), Thin Quad Flat Package (TQFP), Tape Carrier Package (TCP), ball grid array (BGA), chip size package (CSP), matrix array package ball grid array (MAPBGA), chip stacked chip size package, etc. The pressure-sensitive adhesive tape set of the present invention can be applied to the manufacture of logic elements and the manufacture of image sensors such as contact image sensors (CIS).

  As mentioned above, although the adhesive tape set of this invention was demonstrated, this invention is not limited to these.

  For example, each component of the adhesive tape for processing a semiconductor wafer and the adhesive tape for transferring a semiconductor element provided in the adhesive tape set of the present invention may have an optional component that can exhibit the same function, or As described in the above embodiment, the base material may be composed of a plurality of layers in addition to the structure composed of one layer, for example, on the surface opposite to the adhesive layer of the base material described above. Further, an antistatic layer may be provided.

  In addition, the configuration of each layer of the adhesive tape for processing a semiconductor wafer and the adhesive tape for transferring a semiconductor element provided in the adhesive tape set of the present invention can be replaced with any configuration that can exhibit the same function, or Arbitrary configurations can also be added.

  Next, the adhesive tape for transferring a semiconductor element of the present invention (second invention) will be described. The above-mentioned adhesive tape 200 for transferring a semiconductor element has the same configuration as the adhesive tape for transferring a semiconductor element of the present invention except for the configuration related to the contact angle of hexadecane with the adhesive layer 202. Therefore, the semiconductor device 10 described above can be similarly manufactured by using the adhesive tape for transferring a semiconductor element of the present invention. For this reason, description of the manufacturing method of the semiconductor device using the adhesive tape for semiconductor element transfer of this invention is abbreviate | omitted. In addition, when manufacturing a semiconductor device using the adhesive tape for transferring a semiconductor element of the present invention, the adhesive tape 100 for processing a semiconductor wafer used in the above-described method for manufacturing the semiconductor device 10 may be used as an example. it can. And according to this invention, the contact angle of the hexadecane with respect to the non-formation surface in which the circuit material of the semiconductor chip 20 to which the resin material derived from the processing adhesive tape 100 is not formed is H [°], and the transfer adhesive tape When the contact angle of hexadecane with respect to the adhesive layer 202 included in 200 is B [°], the relationship of 20 ° ≦ H−B is satisfied. Hereinafter, this point will be mainly described.

  According to the present invention, the contact angle of hexadecane with respect to the non-formed surface (lower surface) on which the circuit of the semiconductor chip 20 on which the resin material derived from the processing pressure-sensitive adhesive tape 100 is not formed is H [°], and for transfer When the contact angle of hexadecane with the pressure-sensitive adhesive layer 202 included in the pressure-sensitive adhesive tape 200 is B [°], the pressure-sensitive adhesive layer is applied to the constituent materials included in the pressure-sensitive adhesive layer 2 so as to satisfy the relationship of 20 ° ≦ H−B. A constituent material included in 202 is selected. Hereinafter, the combination of the constituent materials of the adhesive layer 2 and the adhesive layer 202 will be described in detail.

  Here, as described above, the processing adhesive tape 100 is used to obtain the semiconductor chip 20 by separating the semiconductor wafer 7 in a state where the semiconductor wafer 7 is adhered, and the transfer adhesive tape 100 is used. 200 is used for rearranging, moving and storing the semiconductor chip 20 picked up from the processing adhesive tape 100.

  Thus, in the manufacturing method of the semiconductor device, the processing adhesive tape 100 and the transfer adhesive tape 200 are used, but the semiconductor chip 20 picked up from the processing adhesive tape 100 is in contact with the adhesive layer 2. In addition, the adhesive layer 2 is attached to the adhesive layer 202 of the transfer adhesive tape 200 in a state where a part of the adhesive layer 2 is attached (remains) to the non-formation surface (lower surface) side where no circuit is formed.

  Further, in the method for manufacturing a semiconductor device described above, a plurality of semiconductor devices 10 are manufactured in a lump by repeatedly performing the steps [9A] to [13A]. Therefore, as the number of semiconductor chips 20 acquired from one semiconductor wafer 7 increases, as in the case of using a semiconductor wafer 7 that is enlarged to 12 inches, a plurality of semiconductor chips 20 are transferred. The time (arrangement time) for rearranging the adhesive tape 200 for use increases. As a result, the time during which the semiconductor chip 20 is adhered to the adhesive layer 202 of the transfer adhesive tape 200 is transferred to the mounting step [10A] at the beginning and the mounting step at the end [ 10A] is greatly different.

  For these reasons, the semiconductor chip 20 is transferred to the mounting step [10A] on the first side and the semiconductor chip 20 transferred to the mounting step [10A] on the last side by the adhesive layer 202. A difference arises in the adhesive force (holding force) hold | maintained at the adhesive tape 200 for transfer. Due to this difference in adhesive strength, there has been a problem that the pickup of the semiconductor chip 20 from the transfer adhesive tape 200 in the pickup step [9A] cannot be carried out stably.

  As a result of intensive studies on such problems, wetting spreadability of hexadecane with respect to the lower surface of the semiconductor chip 20 to which the resin material derived from the processing adhesive tape 100 is adhered, and the adhesive layer 202 with which the lower surface side of the semiconductor chip 20 contacts. It has been found that the relationship between the wet spreading property of hexadecane and the retention strength of the semiconductor chip 20 by the adhesive layer 202, and thus the temporal stability of this retention force.

  As a result of further studies by the inventors, the contact angle of hexadecane with respect to the non-formed surface (lower surface) where the circuit of the semiconductor chip 20 is not formed is set to H [°], and hexadecane with respect to the adhesive layer 202 (second adhesive layer). By satisfying the relationship of 20 ° ≦ H−B when the contact angle is B [°], the semiconductor chip 20 is held by the adhesive layer 202 in the sealed space 255 before the energy application step [8A]. In addition, after the energy application step [8A], the holding force capable of peeling the semiconductor chip 20 from the adhesive layer 202 can be obtained. Furthermore, in the pickup process [9A], the semiconductor chip 20 picked up from the transfer adhesive tape 200 is transferred to the first mounting step [10A], and the last mounting step [10A]. The present invention (second invention) has been completed by finding that the semiconductor chip 20 can be stably implemented without causing a large difference between the semiconductor chip 20 and the semiconductor chip 20.

  In the pickup process [9A], the semiconductor chip 20 picked up from the transfer adhesive tape 200 is transferred to the mounting step [10A] at the beginning, and the mounting step [10A] at the end. It can be inferred from the following mechanism that stable implementation can be performed without causing a large difference between the semiconductor chip 20 and the semiconductor chip 20.

  That is, as in the case where the absolute value of the difference between the contact angle H of hexadecane with respect to the non-formed surface of the semiconductor chip 20 and the contact angle B of hexadecane with respect to the adhesive layer 202 satisfies the relationship of 20 ° ≦ H−B. Both the hexadecane wettability with respect to the adhesive layer 2 remaining on the non-formation surface side of the semiconductor chip 20 and the hexadecane wettability with respect to the adhesive layer 202 with which the lower surface side of the semiconductor chip 20 contacts are both hydrophilic or hydrophobic. And, on the non-formation surface side of the semiconductor chip 20, an affinity interaction occurs between the adhesive layer 2 and the adhesive layer 202, and the bonding strength between them is improved. For this reason, it is speculated that the holding force of the semiconductor chip 20 by the adhesive layer 202 tends to increase with time. On the other hand, by satisfying the relationship of 20 ° ≦ H−B, the wet spreading property of hexadecane to the adhesive layer 2 remaining on the non-formed surface side of the semiconductor chip 20 and the non-formed surface side of the semiconductor chip 20 are in contact with each other. Considering the wettability of hexadecane with respect to the adhesive layer 202 to be adhered, the adhesive layer 2 remaining on the non-formation surface side of the semiconductor chip 20 exhibits hydrophilicity (oleophobicity), and the adhesion with which the non-formation surface side of the semiconductor chip 20 contacts The layer 202 exhibits hydrophobicity (lipophilicity), and accordingly, the occurrence of interaction between the adhesive layer 2 and the adhesive layer 202 can be accurately suppressed or prevented. For this reason, it is presumed that the change over time in the bonding strength between them, and thus the holding force of the semiconductor chip 20 by the adhesive layer 202, is suppressed or prevented accurately.

  Further, the absolute value of the difference between the contact angle H of hexadecane with respect to the non-formed surface of the semiconductor chip 20 and the contact angle B of hexadecane with respect to the adhesive layer 202 may satisfy the relationship of 20 ° ≦ H−B. It is preferable to satisfy the relationship of ° ≦ H−B ≦ 35 °. Thus, the semiconductor chip 20 is more stably held by the adhesive layer 202 in the sealed space 255 before the energy application step [8A], and the semiconductor chip 20 is removed from the adhesive layer 202 after the energy application step [8A]. The holding force can be set to such an extent that it can be easily peeled off.

  Further, when the relationship of 20 ° ≦ H−B is satisfied, the size of each contact angle H, B is not particularly limited, but for example, the contact angle H is 10 ° or more and the contact angle B is less than 10 °. The contact angle H is preferably 25 ° or more and 35 ° or less, and the contact angle B is more preferably 3 ° or more and 8 ° or less. Thereby, it is possible to more accurately suppress or prevent the temporal change in the holding force of the semiconductor chip 20 by the adhesive layer 202 after the energy application step [8A].

  Further, in addition to the contact angle of hexadecane with respect to the non-formed surface of the semiconductor chip 20 and the adhesive layer 202, the contact angle of pure water with respect to the non-formed surface of the semiconductor chip 20 is set to I [°]. When the contact angle is D, the absolute value of the difference between the contact angle I and the contact angle D preferably satisfies the relationship 55 ° ≦ DI, and satisfies the relationship 55 ° ≦ DI ≦ 65. It is preferable to do this. Further, the contact angle I of pure water with respect to the non-formed surface of the semiconductor chip 20 is preferably 50 ° or less, the contact angle D of pure water with respect to the adhesive layer 202 is preferably more than 90 °, and the contact angle I is 35. More preferably, the contact angle D is greater than 95 ° and less than 105 °. Thereby, it is possible to more accurately suppress or prevent the temporal change in the holding force of the semiconductor chip 20 by the adhesive layer 202 after the energy application step [8A].

  As described above, in order to satisfy the relationship of 20 ° ≦ H−B, the absolute value of the difference between the contact angle H of hexadecane with respect to the non-formed surface of the semiconductor chip 20 and the contact angle B of hexadecane with respect to the adhesive layer 202 is: This can be realized by appropriately selecting the constituent material included in the adhesive layer 202 with respect to the constituent material included in the adhesive layer 2. In particular, regarding the constituent materials of the pressure-sensitive adhesive layer 2 and the pressure-sensitive adhesive layer 202, the above relationship can be reliably adjusted by appropriately setting the presence or absence of the addition of a surfactant as a leveling agent or the like and the content thereof. Specifically, the contact angle of hexadecane with respect to the layer containing the surfactant can be set lower than the contact angle of hexadecane with respect to the layer not containing the surfactant. For this reason, the adhesive layer 2 does not contain a surfactant and the adhesive layer 202 contains a surfactant. As a result, the contact angle B of hexadecane with respect to the adhesive layer 202 can be reduced by the non-contact of the semiconductor chip 20. It can be set smaller than the contact angle H of hexadecane with respect to the formation surface. For this reason, the relationship of 20 ° ≦ H−B can be surely satisfied.

The surfactant may be any of anionic, cationic and nonionic surfactants. For example, perfluoroalkylsulfonic acid (CF ₃ (CF ₂ ) _n SO ₃ H; n is 1 or an integer), perfluoroalkylcarboxylic acid (CF ₃ (CF ₂ ) _n COOH; n is an integer of 1 or more), fluorine telomer alcohol (F (CF ₂ ) _n CH ₂ CH ₂ OH; n is 1 Fluorine surfactants (anionic surfactants) such as the above integers are preferably used.

  Further, in the energy application step [8A], it is preferable that the holding force (adhesive force) of the semiconductor chip 20 by the adhesive layer 202 after energy application to the adhesive layer 202 does not change with time. Since it is the same as the description in the first invention, it is omitted.

  The adhesive tape for transferring a semiconductor element of the present invention can be applied to manufacture of a flip chip ball grid array (FCBGA) type semiconductor device 10 shown in FIG. Also, for example, Small Outline Package (SOP), Small Outline J Lead Package (SOJ), Thin Small Outline Package (TSOP), Thin Quad Flat Package (TQFP), Tape Carrier Package (TCP), ball grid array (BGA), chip size package (CSP), matrix array package ball grid array (MAPBGA), chip stacked chip size package, etc. The adhesive tape for transferring a semiconductor element of the present invention can be applied to manufacture of a logic element and an image sensor such as a contact image sensor (CIS).

  As mentioned above, although the adhesive tape for semiconductor element transfer of this invention was demonstrated, this invention is not limited to these.

  For example, each layer of the adhesive tape for transferring a semiconductor element of the present invention may be added with any component that can exhibit the same function, or the base material is as described in the above embodiment. In addition to being composed of one layer, it may be composed of a plurality of layers. For example, an antistatic layer may be provided on the surface of the substrate opposite to the adhesive layer.

  Moreover, the structure of each layer which the adhesive tape for semiconductor element transfer of this invention has can be substituted with the arbitrary structures which can exhibit the same function, or arbitrary structures can also be added.

Next, specific examples of the present invention (first and second inventions) will be described.
In addition, this invention is not limited to description of these Examples at all.

1. Preparation of processing adhesive tape 100 and transfer adhesive tape 200 (adhesive tape No. 1)
Adhesive tape No. 1 provided with adhesive layers 2 and 202 containing no surfactant on the substrates 4 and 204. 1 adhesive tapes 100 and 200 were prepared.

  The adhesive tape No. In the pressure-sensitive adhesive tapes 100 and 200, the contact angle of pure water with respect to the pressure-sensitive adhesive layers 2 and 202 was 80 °, and the contact angle of hexadecane with respect to the pressure-sensitive adhesive layers 2 and 202 was 42 °.

(Adhesive tape No. 2)
Adhesive tape No. 1 provided with adhesive layers 2 and 202 containing a surfactant on the substrates 4 and 204. 2 adhesive tapes 100 and 200 were prepared.

  The adhesive tape No. In the adhesive tapes 100 and 200 of No. 2, the contact angle of pure water to the adhesive layers 2 and 202 was 107 °, and the contact angle of hexadecane to the adhesive layers 2 and 202 was 6 °.

(Adhesive tape No. 3)
Adhesive tape No. 1 provided with adhesive layers 2 and 202 containing a surfactant on the substrates 4 and 204. 3 adhesive tapes 100 and 200 were prepared.

  The adhesive tape No. 3, the contact angle of pure water with respect to the adhesive layers 2 and 202 was 102 °, and the contact angle of hexadecane with respect to the adhesive layers 2 and 202 was 5 °.

(Adhesive tape No. 4)
Adhesive tape No. 1 provided with adhesive layers 2 and 202 containing a surfactant on the substrates 4 and 204. 4 adhesive tapes 100 and 200 were prepared.

  The adhesive tape No. In the pressure-sensitive adhesive tapes 100 and 200, the contact angle of pure water with respect to the pressure-sensitive adhesive layers 2 and 202 was 106 °, and the contact angle of hexadecane with respect to the pressure-sensitive adhesive layers 2 and 202 was 16 °.

(Adhesive tape No. 5)
A pressure-sensitive adhesive tape having an adhesive layer 202 containing a surfactant on a substrate 204. 5 adhesive tape 200 was prepared.
The adhesive tape No. 5, the contact angle of pure water with respect to the adhesive layer 202 was 111 °, and the contact angle of hexadecane with respect to the adhesive layer 202 was 17 °.

2. Combination of adhesive tapes 100 and 200 in a tape set (Example 1)
The tape set of Example 1 was used as adhesive tape 100 for processing as adhesive tape No. 1 and the adhesive tape No. 1 as the adhesive tape 200 for transfer. 3 and so on.

(Comparative Example 1)
The tape set of Comparative Example 1 was used as an adhesive tape 100 for processing. 1 and the adhesive tape No. 1 as the adhesive tape 200 for transfer. 4 and so on.

(Comparative Example 2)
The tape set of Comparative Example 2 was used as an adhesive tape 100 for processing. 2 and adhesive tape No. 2 as the adhesive tape 200 for transfer. 1 and so on.

(Comparative Example 3)
The tape set of Comparative Example 3 was used as an adhesive tape 100 for processing as an adhesive tape 100 for processing. 3 and adhesive tape No. 2 as the adhesive tape 200 for transfer. 1 and so on.

(Comparative Example 4)
The tape set of Comparative Example 4 was used as an adhesive tape 100 for processing. 4 and adhesive tape No. 4 as the adhesive tape 200 for transfer. 1 and so on.

(Comparative Example 5)
The tape set of Comparative Example 5 was used as an adhesive tape No. 2 and adhesive tape No. 2 as the adhesive tape 200 for transfer. 3 and so on.

(Comparative Example 6)
The tape set of Comparative Example 6 was used as adhesive tape 100 for processing as adhesive tape No. 2 and adhesive tape No. 2 as the adhesive tape 200 for transfer. 5 and so on.

3. Evaluation <Retention force by transfer adhesive tape 200>
The holding force by the transfer adhesive tape 200 was evaluated as follows.

  << 1 >> First, for the processing adhesive tape 100 provided in the tape sets of Examples and Comparative Examples, an 8-inch semiconductor wafer 7 was attached to the adhesive layer 2 of the processing adhesive tape 100, respectively. . Next, after the adhesive layer 2 was irradiated with ultraviolet rays to reduce the adhesive force of the adhesive layer 2 to the semiconductor wafer 7, the processing adhesive tape 100 was peeled from the semiconductor wafer 7. At this time, the contact angle I of pure water and the contact angle H of hexadecane with respect to the surface (non-formed surface) on which the processing adhesive tape 100 of the semiconductor wafer 7 was affixed were measured.

  << 2 >> Next, the surface on which the processing adhesive tape 100 of the semiconductor wafer 7 was affixed (non-formed surface), and each adhesive layer of the transfer adhesive tape 200 provided in the tape set of Examples and Comparative Examples A transfer adhesive tape 200 was affixed to the semiconductor wafer 7 so as to be in contact with 202 to obtain a laminate. Thereafter, the adhesive layer 202 was irradiated with ultraviolet rays to reduce the adhesive force of the adhesive layer 202 to the semiconductor wafer 7, and then the laminate was stored at 60 ° C.

  << 3 >> Next, regarding the holding force (adhesive force) when the transfer adhesive tape 200 is peeled from the semiconductor wafer 7, the storage time at 60 ° C. is 0, 2, 4, and 7 days. , Respectively.

  In addition, after the step << 2 >> is performed on the semiconductor wafer 7 in which the step << 1 >> is omitted with respect to the transfer adhesive tape 200 included in the tape sets of the examples and the comparative examples. The holding power (adhesive force) when peeling the transfer adhesive tape 200 from the semiconductor wafer 7 was measured.

The holding force of the transfer adhesive tape 200 was measured according to a peel strength test (specified in JIS-C6481). Specifically, the transfer adhesive tape 200 affixed to each semiconductor wafer 7 is cut with a width of 10 mm, and then grips one end and pulls at a speed of 300 mm / second in the direction of 180 ° at room temperature. I peeled it off. The peel strength measured as the load at this time was determined as the holding force of the transfer adhesive tape 200.
The evaluation results are shown in Table 1.

  As shown in Table 1, the tape sets of the examples satisfy the condition that the contact angle A of hexadecane with respect to the adhesive layer is 10 ° or more and the contact angle B of hexadecane with respect to the adhesive layer is less than 10 °. On the other hand, the tape set of each comparative example does not satisfy this contact angle condition. Further, the transfer adhesive tapes of the examples satisfy the relationship of 20 ° ≦ HB, while the transfer adhesive tapes of the comparative examples do not satisfy the relationship. Therefore, in the tape set of the embodiment (transfer adhesive tape), the rate of change (F / E) of the holding force [cN / 25 mm] of the semiconductor wafer 7 relative to the transfer adhesive tape 200, that is, the increase in the adhesive force is suppressed. It is less than 2.0, shows the result that the change over time of the holding force of the semiconductor wafer 7 with respect to the transfer adhesive tape 200 is suppressed, and also has the following effect on the adhesive force drop rate It was good.

  Specifically, when the holding force [cN / 25 mm] of the semiconductor wafer 7 with respect to the transfer adhesive tape 200 is compared according to whether the processing adhesive tape 100 is attached to the semiconductor wafer 7 (E / G), In the tape set (transfer adhesive tape), E / G, that is, the adhesive force drop rate is less than 1.0, and the holding power of the semiconductor wafer 7 to the transfer adhesive tape 200 is effectively reduced. The results are shown. On the other hand, in the tape set (transfer adhesive tape) of each comparative example, a result satisfying both the adhesive force increase rate and the adhesive force decrease rate was not obtained.

  ADVANTAGE OF THE INVENTION According to the present invention, an adhesive tape set and a semiconductor element transfer adhesive capable of stably picking up a semiconductor element regardless of the arrangement time from the semiconductor wafer processing adhesive tape to the semiconductor element transfer adhesive tape. Tape can be provided. Therefore, the present invention has industrial applicability.

DESCRIPTION OF SYMBOLS 2 Adhesive layer 4 Base material 7 Wafer for semiconductor 9 Wafer ring 10 Semiconductor device 17 Mold part 20 Semiconductor chip 21 Terminal 30 Interposer 41 Terminal 70 Bump 80 Sealing layer 81 Connection part 85 Solder bump 100 Adhesive tape for semiconductor wafer processing ( Adhesive tape for processing)
121 outer peripheral part 122 center part 200 Adhesive tape for semiconductor element transfer (adhesive tape for transfer)
202 Adhesive layer 204 Base material 255 Sealed space 300 Protective adhesive tape

Claims (13)

A semiconductor wafer processing pressure-sensitive adhesive tape comprising a first laminate comprising a first base material in the form of a sheet containing a resin material, and a first pressure-sensitive adhesive layer laminated on the first base material;
A pressure-sensitive adhesive tape for transferring a semiconductor element constituted by a second laminate comprising a second base material in the form of a sheet containing a resin material and a second pressure-sensitive adhesive layer laminated on the second base material, An adhesive tape set comprising at least one sheet,
The adhesive tape set, wherein a contact angle of hexadecane with respect to the first adhesive layer is 10 ° or more, and a contact angle of hexadecane with respect to the second adhesive layer is less than 10 °.   The relationship of 20 ° ≦ AB is satisfied, where A [°] is the contact angle of hexadecane with respect to the first adhesive layer and B [°] is the contact angle of hexadecane with respect to the second adhesive layer. Adhesive tape set described in 1.   The pressure-sensitive adhesive tape set according to claim 1 or 2, wherein a contact angle of pure water with respect to the first pressure-sensitive adhesive layer is 90 ° or less, and a contact angle of pure water with respect to the second pressure-sensitive adhesive layer is more than 90 °. .   The pressure-sensitive adhesive tape set according to any one of claims 1 to 3, wherein the second pressure-sensitive adhesive layer contains a surfactant. The semiconductor wafer processing pressure-sensitive adhesive tape is used to obtain a plurality of semiconductor elements formed by dividing a semiconductor wafer attached to the semiconductor wafer processing pressure-sensitive adhesive tape,
5. The semiconductor device transfer adhesive tape according to claim 1, wherein the semiconductor device picked up from the semiconductor wafer processing adhesive tape is used for rearranging, moving and storing the semiconductor devices. Adhesive tape set described in 1.   Each of the semiconductor elements picked up from the semiconductor wafer processing pressure-sensitive adhesive tape is transferred to the semiconductor element in a state where a part of the first pressure-sensitive adhesive layer remains on the surface side in contact with the first pressure-sensitive adhesive layer. The pressure-sensitive adhesive tape set according to claim 5, which is attached to the second pressure-sensitive adhesive layer included in the pressure-sensitive adhesive tape. A pressure-sensitive adhesive tape for transferring a semiconductor element, which is composed of a laminate comprising a base material in the form of a sheet containing a resin material and an adhesive layer laminated on the base material, and is used for fixing a semiconductor element. ,
The semiconductor element is fixed to the semiconductor element transfer adhesive tape on the non-formation surface side where no circuit is formed, and when the semiconductor element is obtained by dividing the semiconductor wafer into pieces on the non-formation surface, A resin material having adhesiveness derived from an adhesive tape for processing a semiconductor wafer used for fixing the semiconductor wafer is attached,
The contact angle of hexadecane with respect to the non-forming surface to which the resin material derived from the adhesive tape for wafer processing for semiconductor is attached is H [°], and the contact angle of hexadecane with respect to the adhesive layer provided in the adhesive tape for transferring semiconductor elements. The adhesive tape for transporting a semiconductor element satisfies a relationship of 20 ° ≦ H−B, where B [°].   The pressure-sensitive adhesive tape for transferring semiconductor elements according to claim 7, wherein the contact angle H of hexadecane with respect to the non-formed surface to which the resin material derived from the pressure-sensitive adhesive tape for semiconductor wafer processing is attached is 10 ° or more.   The adhesive tape for transporting semiconductor elements according to claim 7 or 8, wherein the contact angle B of hexadecane with respect to the adhesive layer included in the adhesive tape for transporting semiconductor elements is less than 10 °.   The contact angle of pure water with respect to the non-formed surface to which the resin material derived from the semiconductor wafer processing adhesive tape is attached is I [°], and the pure water with respect to the adhesive layer provided in the semiconductor element transfer adhesive tape The pressure-sensitive adhesive tape for transferring a semiconductor element according to any one of claims 7 to 9, which satisfies a relationship of 55 ° ≤ D-I when the contact angle is D [°].   The semiconductor element according to any one of claims 7 to 10, wherein a contact angle I of pure water with respect to the non-formed surface to which the resin material derived from the adhesive tape for wafer processing for semiconductor is attached is 50 ° or less. Adhesive tape for transfer.   12. The adhesive tape for transporting semiconductor elements according to claim 7, wherein a contact angle D of pure water with respect to the adhesive layer included in the adhesive tape for transporting semiconductor elements is greater than 90 °.   The adhesive tape for transferring a semiconductor element according to any one of claims 7 to 12, wherein the adhesive layer included in the adhesive tape for transferring a semiconductor element contains a surfactant.

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