JP2022145300A - Adhesive tape - Google Patents

Abstract

To provide an adhesive tape allowing a stable separation of the adhesive tape from a component to pick up the component, even if an angle of the adhesive tape to the component varies when separating the adhesive tape from the component after obtaining the individual component by cutting a substrate in a thickness direction in the state where the substrate is adhered onto the adhesive tape.SOLUTION: An adhesive tape 100 includes a base material 4 and an adhesive layer 2. The adhesive layer 2 decreases an adhesive force by an application of energy. If a peel strength is B when measured when the adhesive tape is adhered on a surface of a silicon wafer and thereafter peeled off in a direction of 30° at a speed of 1000 mm/min, holding one end of the adhesive tape after the application of energy, and a peel strength is D when measured when peeled off in a direction of 180° at a speed of 1000 mm/min, a relation of 0≤|B-D|<110 is satisfied.SELECTED DRAWING: Figure 2

Description

TECHNICAL FIELD The present invention relates to an adhesive tape used for temporarily fixing substrates and components.

In recent years, the demand for high-density and high-integration semiconductor devices has increased in response to the increasing sophistication of electronic equipment and the expansion of mobile applications, and the increase in capacity and density of IC packages is progressing.

As a method for manufacturing these semiconductor devices, for example, first, an adhesive tape is attached to a semiconductor substrate (semiconductor wafer) as a substrate, and while the periphery of the semiconductor substrate is fixed with a wafer ring, a dicing process using a dicing saw is performed. By cutting the semiconductor substrate in the thickness direction, the semiconductor substrate is cut and separated (individualized) into individual semiconductor elements (semiconductor chips). Next, after an expanding step of forming a gap between adjacent semiconductor elements by radially extending the adhesive tape using a wafer ring, the individualized semiconductor elements are pushed up using needles. , to perform a pick-up process to pick up. Next, the picked up semiconductor element is transferred to a mounting step for mounting it on a metal lead frame or substrate (eg, tape substrate, organic hard substrate, etc.). The picked-up semiconductor element is adhered to a lead frame or substrate via, for example, an underfill material in a mounting process, and then the semiconductor element is sealed on the lead frame or substrate with a sealing portion to form a semiconductor device. manufactured.

In recent years, various studies have been made on adhesive tapes (dicing tapes) used for manufacturing such semiconductor devices (see, for example, Patent Document 1).

This adhesive tape generally has a substrate (film substrate) and an adhesive layer formed on this substrate, and the semiconductor substrate is fixed by the adhesive layer. In addition, the adhesive layer is usually composed of a resin composition containing a base resin having adhesiveness, a photocurable resin, and the like so that the semiconductor element can be picked up after the dicing process of the semiconductor substrate. That is, when energy is applied to the adhesive layer after the dicing step, the resin composition is cured and the adhesiveness of the adhesive layer is reduced. , the adhesive tape can be peeled off from the semiconductor element, and as a result, the semiconductor element can be picked up.

Here, when the semiconductor element has a rectangular shape in a plan view, generally, the semiconductor element is pushed up using four needles, and each needle is attached to each of the four corners of the semiconductor element using four needles. are arranged so as to correspond to each other, and the four corners of the semiconductor element are pushed up substantially at the same time.

Since the thickness of the semiconductor element is becoming thinner as the capacity and density of the IC package increases, if the four corners of the semiconductor element are pushed up by four needles almost at the same time, the semiconductor element will be formed with the four corners as the top. , and has a curved shape with the center portion as the bottom portion. Thereafter, while the semiconductor element maintains this curved shape, the adhesive tape is peeled off from the semiconductor element starting from the vicinity of the four corners of the semiconductor element, and then the peeling of the adhesive tape progresses from the four corners toward the central portion. , and the central portion of the adhesive tape is completely peeled off, the peeling of the adhesive tape from the semiconductor element is completed. At this time, the curved shape of the semiconductor element is continuously relaxed as the peeling of the adhesive tape progresses, and the semiconductor element finally forms a flat plate shape.

Thus, when the adhesive tape is peeled off from the semiconductor element, the semiconductor element is deformed from a curved shape to a flat plate shape. Therefore, the angle of the adhesive tape with respect to the semiconductor element at this time inevitably changes. Even if the angle of the adhesive tape with respect to the semiconductor element changes, it is required to be able to stably separate the adhesive tape from the semiconductor element and pick up the semiconductor element.

Moreover, such a problem is not limited to obtaining semiconductor elements as parts by cutting a semiconductor substrate (semiconductor wafer) as a substrate in the thickness direction. The same problem occurs when various substrates such as metal substrates are cut (singulated) in the thickness direction to obtain individualized parts.

JP 2009-245989 A

An object of the present invention is to obtain individualized parts by cutting the substrate in the thickness direction in a state where the substrate is attached to the adhesive tape, and then pick up the individualized parts. To provide an adhesive tape capable of stably peeling the adhesive tape from a part and picking up the part even if the angle of the adhesive tape with respect to the part changes when the adhesive tape is peeled from the part. That's what it is.

Such objects are achieved by the present invention described in (1) to (11) below.
(1) A laminate comprising a substrate containing a resin material and an adhesive layer laminated on one side of the substrate, and used by temporarily fixing at least one of a substrate and a component. Adhesive tape,
The adhesive layer contains a base resin having adhesiveness and a curable resin that is cured by application of energy, and the application of energy reduces the adhesive force to the substrate and components laminated on the adhesive layer. and
The adhesive tape is prepared by attaching the adhesive tape with a width of 20 mm to the surface of a silicon wafer with a diameter of 6 inches and a thickness of 500 μm, the surface of which is polished with #2000, and then held at 23 ° C. for 1 hour. , B [cN /20 mm], and the peel strength measured when peeled off at a speed of 1000 mm / min in the direction of 180 ° is D [cN / 20 mm], 0 ≤ |BD | <110 An adhesive tape characterized by satisfying relationships.

(2) The peel strength measured when the adhesive tape is peeled off at a speed of 300 mm / min in the direction of 30 ° is A [cN / 20 mm], and 300 mm / min in the direction of 180 ° The above (1) satisfying the relationship of 0 ≤ |AC| adhesive tape.

(3) The pressure-sensitive adhesive tape according to (2) above, wherein the peel strength A is 60 cN/20 mm or more and 400 cN/20 mm or less.

(4) After applying the energy, the pressure-sensitive adhesive layer has a complex viscosity η ^* of 1.0×10 ⁷ mPa s or more measured using a rheometer at a temperature of 23° C., a strain amount of 1 mrad, and a frequency of 1 Hz. The pressure-sensitive adhesive tape according to any one of (1) to (3) above, which has a viscosity of 0×10 ⁹ mPa·s or less.

(5) The adhesive tape according to any one of (1) to (4) above, wherein the base resin is an acrylic resin.

(6) The pressure-sensitive adhesive tape according to any one of (1) to (5) above, wherein the curable resin is at least one of urethane acrylate and bisphenol A-based epoxy acrylate.

(7) The adhesive tape according to any one of (1) to (6) above, wherein the adhesive layer further contains a plasticizer.

(8) The adhesive tape is cut so as to reach halfway in the thickness direction of the base material from the substrate with the substrate fixed on the adhesive layer, thereby singulating the substrate. After that, the adhesive tape is stretched in the surface direction, and the parts are pushed up from the base material side and pulled out from the opposite side of the base material. The pressure-sensitive adhesive tape according to any one of (1) to (7) above, which is used when separating from a layer.

(9) The adhesive tape according to any one of (1) to (8) above, wherein the adhesive layer has a thickness of 5 μm or more and 50 μm or less.

(10) The substrate according to any one of (1) to (9) above, wherein the substrate has a surface resistivity of 1.0×10 ¹³ (Ω/□) or less on the surface opposite to the adhesive layer side. Adhesive tape.

(11) When the adhesive tape is viewed in plan, the number of bubbles formed at the interface between the base material and the adhesive layer has an area of 100 μm ² or more and is 15.0/mm ² or less. The pressure-sensitive adhesive tape according to any one of (1) to (10) above.

According to the present invention, the adhesive tape with a width of 20 mm was attached to the surface of a silicon wafer with a diameter of 6 inches and a thickness of 500 μm, the surface of which was polished with #2000, and then held at 23° C. for 1 hour. Later, after applying the energy, in an environment of 23 ° C., hold one end of the adhesive tape and peel it off in a direction of 30 ° at a speed of 1000 mm / min. cN/20 mm], and the peel strength measured when peeled off at a speed of 1000 mm/min in the direction of 180° is D [cN/20 mm], 0≦|B−D|<110 satisfied with the relationship. In this way, the peeling strength B when peeled off in the direction (angle) of 30° and the peeling strength D when peeled off in the direction (angle) of 180° are 0 ≤ |B−D| Since the relationship <110 is satisfied, even if the angle of the adhesive tape with respect to the part when the adhesive tape is peeled off from the part changes when picking up the individualized part, the The adhesive tape can be stably peeled off and the component can be picked up.

1 is a vertical cross-sectional view showing an example of a semiconductor device manufactured using the adhesive tape of the present invention; FIG. 2 is a longitudinal sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of the present invention; FIG. 2 is a longitudinal sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of the present invention; FIG. FIG. 3 is an enlarged view enlarging the periphery of a needle positioned in a region [A] surrounded by a dotted line in FIG. 2; FIG. 3 is an enlarged view enlarging the periphery of a needle positioned in a region [A] surrounded by a dotted line in FIG. 2; It is a longitudinal section showing an embodiment of an adhesive tape. FIG. 7 is a longitudinal sectional view for explaining a method of manufacturing the adhesive tape shown in FIG. 6;

The pressure-sensitive adhesive tape of the present invention will be described in detail below.
First, before describing the adhesive tape of the present invention, a semiconductor device manufactured using the adhesive tape of the present invention will be described.

<Semiconductor device>
FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured using the adhesive tape of the present invention. In the following description, the upper side in FIG. 1 is called "upper", and the lower side is called "lower". In addition, in each drawing referred to in this specification, the dimensions in the left-right direction and/or the thickness direction are exaggerated, and are greatly different from the actual dimensions.

A semiconductor device 10 shown in FIG. It has a mold portion (sealing portion) 17 for sealing.

The interposer 30 is an insulating substrate, and is made of various resin materials such as polyimide, epoxy, cyanate, and bismaleimide triazine (BT resin). The plan view shape of the interposer 30 is generally a quadrangle such as a square or rectangle.

A terminal 41 made of a conductive metal material such as copper is provided in a predetermined shape on the upper surface (one surface) of the interposer 30 .

In addition, a plurality of vias (through holes) (not shown) are formed through the interposer 30 in its thickness direction.

One end (upper end) of each bump 70 is electrically connected to a part of the terminal 41 via each via, and the other end (lower end) protrudes from the lower surface (the other surface) of the interposer 30. there is

A portion of the bump 70 protruding from the interposer 30 has a substantially spherical shape (ball shape).

The bump 70 is mainly made of brazing material such as solder, silver brazing, copper brazing, or phosphorous copper brazing.

A terminal 41 is formed on the interposer 30 . A terminal 21 of the semiconductor chip 20 is electrically connected to the terminal 41 via a connecting portion 81 .

In this embodiment, as shown in FIG. 1, the terminals 21 are configured to protrude from the surface side formed on the semiconductor chip 20, and the terminals 41 are also configured to protrude from the interposer 30. ing.

The gap between the semiconductor chip 20 and the interposer 30 is filled with an underfill material made of various resin materials, and the cured underfill material forms the sealing layer 80. . The sealing layer 80 has the function of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and the function of preventing foreign matter, moisture, etc. from entering the gap.

Furthermore, on the upper side of the interposer 30, the semiconductor chip 20 and the mold part 17 formed so as to cover the interposer 30 are made of a cured semiconductor sealing material (sealing material). , the semiconductor chip 20 is sealed in the semiconductor device 10 to prevent entry of foreign matter, moisture, etc. into the semiconductor chip 20 .

As shown in FIG. 1, the semiconductor chip 20 (semiconductor element) has a semiconductor chip main body 23 (semiconductor element main body) and terminals 21 protruding from the lower surface side of the semiconductor chip main body 23 . there is The semiconductor chip main body 23 has a circuit (not shown) formed on its upper surface side, and is mainly made of a semiconductor material such as Si, SiC, GaN or Ga ₂ O ₃ .

The semiconductor device 10 and the semiconductor chip 20 having such configurations are manufactured as follows, for example, by a semiconductor device manufacturing method using an adhesive tape.

<Method for manufacturing a semiconductor device>
2 and 3 are longitudinal sectional views for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of the present invention, and FIGS. 4 and 5 are surrounded by dotted lines in FIG. FIG. 10 is an enlarged view of the periphery of the needle positioned in the region [A]. In the following description, the upper side in FIGS. 2 to 5 is called "upper", and the lower side is called "lower". 4 and 5, the left side shows a partial sectional view, and the right side shows a partial plan view. Furthermore, in each drawing referred to in this specification, the dimensions in the left-right direction and/or the thickness direction are exaggerated, and are greatly different from the actual dimensions.

[1A] First, an adhesive tape 100 composed of a laminate having a substrate 4 and an adhesive layer 2 laminated on the upper surface of the substrate 4 is prepared, and as shown in FIG. The semiconductor substrate 7 (semiconductor wafer) is placed on the adhesive layer 2 on the portion 122 and lightly pressed to laminate (stick) the semiconductor substrate 7 (sticking step).

On the upper surface of the semiconductor substrate 7, a circuit included in the semiconductor chip 20 (semiconductor chip body portion 23) formed by singulation is formed in advance, and terminals 21 are formed in advance on the lower surface. , the semiconductor substrate 7 is adhered to the adhesive tape 100 with the upper surface of the circuit formed side facing the adhesive layer 2 . For this reason, the adhesive layer 2 is bonded to the upper surface of the semiconductor substrate 7 on which the circuit is formed, that is, the uneven surface on which the unevenness is formed.

[2A] Next, as shown in FIG. 2B, the adhesive tape 100 laminated with the semiconductor substrate 7 is placed on the dicer table 200. Then, as shown in FIG.

[3A] Next, the outer peripheral portion 121 of the adhesive layer 2 is fixed by the wafer ring 9, and then the semiconductor substrate 7 as a substrate is cut (diced) using a dicing saw (blade) (not shown). are singulated to obtain semiconductor chips 20 as components on the adhesive tape 100 (singulation step; see FIG. 2(c)).

At this time, the adhesive tape 100 has a cushioning effect and prevents cracking, chipping, etc. when the semiconductor substrate 7 is cut.

Further, the cutting of the semiconductor substrate 7 using the blade is carried out so as to reach halfway in the thickness direction of the base material 4 as shown in FIG. 2(c). Thereby, the individualization of the semiconductor substrate 7 can be reliably performed.

In this case, for the purpose of preventing dust generated when the semiconductor substrate 7 is cut from scattering, and furthermore, for the purpose of suppressing unnecessary heating of the semiconductor substrate 7, the semiconductor substrate 7 is cut. The semiconductor substrate 7 is cut while supplying water.

[4A] Next, the adhesive tape 100 to which the semiconductor substrate 7 is attached and fixed by the wafer ring 9 is transferred from the dicing device (not shown) to a pick-up device (not shown), and the wafer is While fixed by the ring 9, the central portion 310 is thrust upward against the outer peripheral portion 320 of the table 300 to radially extend the adhesive tape 100, thereby forming the individualized semiconductor substrates 7, that is, the components. A gap having a constant interval is formed between the semiconductor chips 20 (expanding step; see FIG. 2(d)).

Prior to the next step [5A], energy is applied to the adhesive layer 2 to reduce the adhesive force to the semiconductor chip 20, but the application of energy to the adhesive layer 2 is performed in this step [4A]. may be performed after the expanding step in or prior to the expanding step.

[5A] Next, the semiconductor chip 20 is picked up on the stage 400 by suction with a vacuum collet or air tweezers, etc. (pickup step; FIG. 2(e).).

This semiconductor chip 20 is picked up by applying energy to the adhesive layer 2 to harden the adhesive layer 2 after the expanding step of radially extending the adhesive tape 100 in the step [4A]. reduce the adhesive strength of Then, the needle 430 (not shown in FIG. 2) is protruded from the ejector head 410 as shown in FIG. 4(c). That is, the needle 430 protrudes in the thickness direction. As a result, the semiconductor chip 20 adhered to the adhesive tape 100 is pushed up using the needle 430, thereby separating the semiconductor chip 20 from the adhesive tape 100 as shown in FIG. 5(c). be picked up.

Here, when the semiconductor chip 20 has a rectangular shape in plan view as in this embodiment, generally, the semiconductor chip 20 is pushed up using a needle 430 as shown in FIGS. is performed by using four needles 430 and pushing up the four corners of the semiconductor chip 20 almost at the same time while the needles 430 are arranged in correspondence with the four corners of the semiconductor chip 20 .

In this embodiment, hereinafter, the description will focus on "pushing up the four corners with four needles almost simultaneously", but this is an example and the method of picking up the semiconductor chip 20 is not limited to this.

As the capacity and density of IC packages increase, the thickness of the semiconductor chip 20 is becoming thinner. Therefore, by protruding the needles 430 from the ejector head 410, when the four needles 430 push up the four corners of the semiconductor chip 20 almost simultaneously, the semiconductor chip 20 has the four corners as the top and the center as the bottom. It has a curved shape (see FIG. 4(c), etc.). After that, while the semiconductor chip 20 maintains this curved shape, the adhesive tape 100 is peeled off from the semiconductor chip 20 starting from the vicinity of the four corners of the semiconductor chip 20 . That is, a part of the bonding portion 101 where the semiconductor chip 20 and the adhesive tape 100 are bonded together forms peeling portions 102 near the four corners of the semiconductor chip 20 where the adhesive tape 100 is peeled off from the semiconductor chip 20 .

After that, the peeling of the adhesive tape 100 progresses from the four corners toward the central portion, that is, the formation of the peeled portion 102 at the joint portion 101 progresses (see FIGS. 4(b) to 5(b)), The peeling of the adhesive tape 100 from the semiconductor chip 20 is completed by completing the peeling of the adhesive tape 100 in the central portion. That is, the adhesive tape 100 is peeled off from the semiconductor chip 20 by converting all the bonding portions 101 into the peeling portions 102 (see FIG. 5C). At this time, the curved shape of the semiconductor chip 20 is continuously relaxed as the peeling of the adhesive tape 100 progresses, and the semiconductor chip 20 finally forms a flat plate shape.

In this step [5A], the adhesive tape 100 of the present invention is used. That is, in picking up the semiconductor chip 20 as a component in this step [5A], as the adhesive tape 100, a 20 mm wide adhesive After applying the tape and then holding it under the conditions of 23 ° C. for 1 hour, after applying the energy, hold one end of the adhesive tape in an environment of 23 ° C., 1000 mm / min in the direction of 30 ° The peel strength measured when peeled off at a speed of B [cN / 20 mm], and the peel strength measured when peeled off at a speed of 1000 mm / min in the direction of 180 ° D [ cN/20 mm], the relationship 0≦|BD|<110 is satisfied. In this way, the peeling strength B when peeled off in the direction (angle) of 30° and the peeling strength D when peeled off in the direction (angle) of 180° are 0 ≤ |B−D| Those satisfying the relation <110 are used.

Therefore, in this step [5A], when picking up the individualized semiconductor chips 20, the angle formed by the semiconductor chip 20 and the adhesive tape 100 when the adhesive tape 100 is peeled off from the semiconductor chip 20 changes. Even if this occurs, it is possible to stably separate the adhesive tape 100 from the semiconductor chip 20 and pick up the semiconductor chip 20, which will be described in detail later.

Through the steps [1A] to [5A] as described above, the semiconductor chip 20 is separated (divided) from the semiconductor substrate 7 using the adhesive tape 100. FIG. That is, the semiconductor substrate 7 is fixed on the adhesive layer 2 of the adhesive tape 100, and the semiconductor substrate 7 is cut from the semiconductor substrate 7 to reach halfway in the thickness direction of the base material 4, thereby separating the semiconductor substrate 7 into individual pieces. A plurality of semiconductor chips 20 are formed by separating. After that, the adhesive layer 2 is hardened by applying energy to the adhesive layer 2 in a state in which a constant gap is formed between the semiconductor chips 20, and then the semiconductor chip 20 is pushed up from the base material 4 side. The semiconductor chip 20 is separated from the adhesive layer 2 by pulling out from the opposite side of the substrate 4 in this state.

[6A] Next, after transferring the picked up semiconductor chip 20 from a vacuum collet or air tweezers to a mounting probe or the like and turning it upside down, as shown in FIG. and the terminals 41 provided on the interposer 30 are opposed to each other via the solder bumps 85 provided on the terminals 41 , and placed on the interposer 30 . That is, the semiconductor chip 20 (semiconductor element) is placed on the interposer 30 (substrate) with the surface of the semiconductor chip 20 on which the terminals 21 are formed facing downward.

[7A] Next, as shown in FIG. 3B, while heating the solder bumps 85 interposed between the terminals 21 and 41, the interposer 30 and the semiconductor chip 20 are brought close to each other.

As a result, the melted solder bumps 85 come into contact with both the terminals 21 and the terminals 41 , and are cooled in this state to form the connecting portions 81 . 41 are electrically connected (mounting step; see FIG. 3(c)).

[8A] Next, the gap formed between the semiconductor chip 20 and the interposer 30 is filled with an underfill material (sealing material) composed of various resin materials. By curing, a sealing layer 80 composed of a cured product of the underfill material is formed (sealing layer forming step; see FIG. 3(d)).

[9A] Next, on the upper side of the interposer 30, the semiconductor chip 20 is molded with the interposer 30 by forming the mold part 17 (sealing part) so as to cover the semiconductor chip 20 and the interposer 30. Bumps 70 are formed so as to protrude from the lower side of the interposer 30, which is sealed with the portion 17 and electrically connected to a part of the terminals 41 through vias provided in the interposer 30 (see FIG. 3). (e).).

Here, for the sealing by the mold part 17, for example, a mold having an internal space corresponding to the shape of the mold part 17 to be formed is prepared, and the semiconductor chip 20 and the interposer 30 are placed in the internal space. The internal space is filled with a powdery semiconductor sealing material so as to cover the . Then, in this state, the semiconductor encapsulating material is heated to be cured to obtain a cured product of the semiconductor encapsulating material.

The semiconductor device 10 is obtained by the semiconductor device manufacturing method including the steps described above. More specifically, after performing the steps [1A] to [9A], the steps [4A] to [9A] are repeatedly performed, thereby collectively forming a plurality of semiconductor devices 10 from one semiconductor substrate 7. can be manufactured.

The adhesive tape 100 of the present invention, which is used in the manufacturing method of the semiconductor device 10, will be described below.

<Adhesive tape 100>
FIG. 6 is a vertical cross-sectional view showing an embodiment of the adhesive tape. In the following description, the upper side in FIG. 6 is called "upper", and the lower side is called "lower".

In the present invention, the adhesive tape 100 is composed of a laminate including a base material 4 and an adhesive layer 2 laminated on the upper surface (one side) of the base material 4, and includes a semiconductor substrate 7 (substrate) and a semiconductor chip. 20 (parts) are temporarily fixed. As a result, the adhesive strength to the semiconductor substrate 7 and the semiconductor chip 20 laminated on the adhesive layer 2 is reduced. , The adhesive tape with a width of 20 mm is attached, and then held at 23 ° C. for 1 hour. After applying the energy, hold one end of the adhesive tape in an environment of 23 ° C. The peel strength measured when peeled off at a speed of 1000 mm / min in the direction is B [cN / 20 mm], and the peel strength measured when peeled off at a speed of 1000 m / min in the direction of 180 ° When the peel strength is D [cN/20 mm], the relationship 0≦|BD|<110 is satisfied. In this way, the peeling strength B when peeled off in the direction (angle) of 30° and the peeling strength D when peeled off in the direction (angle) of 180° are 0 ≤ |B−D| <110 is satisfied.

Here, in the step [5A], when picking up the individualized semiconductor chip 20 using the four needles 430, as described above, the four needles 430 at the four corners of the semiconductor chip 20 push up the , the semiconductor chip 20 is deformed from a curved shape to a flat plate shape (see FIGS. 4 and 5).

Therefore, the angle of the adhesive tape 100 with respect to the semiconductor chip 20 at this time inevitably changes. Sometimes, even if the angle of the adhesive tape 100 with respect to the semiconductor chip 20 changes, it is required to be able to stably separate the adhesive tape 100 from the semiconductor chip 20 and pick up the semiconductor chip 20 .

For the required properties of the adhesive tape 100 thus obtained, in the present invention, as described above, the adhesive tape 100 has a peeling resistance measured when peeled off at a speed of 1000 mm / min in a direction of 30 °. The relationship between the strength B and the peel strength D [cN/20 mm] measured when peeled off at a speed of 1000 mm / min in the direction of 180 ° satisfies the relationship 0 ≤ |BD | <110. ing.

In the relational expression |BD|, the adhesive tape 100 (adhesive layer 2) is about to be peeled off when measuring the peeling strengths B and D measured when the adhesive tape 100 is peeled off from the silicon wafer. The direction and speed in which the force acts are approximated to the conditions when the separated semiconductor chips 20 are picked up in the step [5A] according to the study of the present inventors.

In the present invention, the degree of variation between the peeling strength B when peeled off in the direction (angle) of 30° and the peeling strength D when peeled off in the direction of 180° is 0 ≤ It is set within a certain range such as |BD|<110.

Thus, according to the present invention, since the degree of variation in the peeling strengths B and D at angles of 30° and 180° is set within a certain range, in the step [5A], When picking up the separated semiconductor chips 20, even if the angle at which the semiconductor chips 20 are picked up changes, the adhesive tape 100 can be stably peeled off from the semiconductor chips 20, and the semiconductor chips 20 can be stably peeled off. can be picked up.

The base material 4 and the adhesive layer 2 of the adhesive tape 100 (dicing tape) will be described in detail below.

<Base material 4>
The base material 4 is mainly made of a resin material, has a sheet shape, and has a function of supporting the adhesive layer 2 provided on the base material 4 . Also, in the expanding step of stretching the pressure-sensitive adhesive tape 100 in the plane direction in the step [4A], it is for realizing the stretching.

Examples of such resin materials include, but are not limited to, olefin resins, polyester resins (ester polymers) such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and polybutylene naphthalate, polyvinyl chloride resins, Polyether ketone such as polyurethane, polyimide, polyamide, polyether ether ketone, polyether sulfone, polystyrene, fluorine resin, silicone resin, cellulose resin, styrene thermoplastic elastomer (styrene polymer), acrylic resin, polyester Thermoplastic resins such as thermoplastic elastomers, polyvinyl isoprene, polycarbonate (carbonate-based polymer), and mixtures of these thermoplastic resins are used.

These resin materials are materials that can transmit energy rays such as light (visible light, near-infrared rays, ultraviolet rays), X-rays, and electron beams. It can be preferably used when irradiating the adhesive layer 2 with light. Therefore, by irradiating the adhesive layer 2 from the base material 4 side with the energy beam, the adhesiveness of the adhesive layer 2 is reduced and the semiconductor chip 20 can be easily picked up.

In particular, it is preferable to use an olefin resin as the resin material. By using an olefin-based resin, the elongation (expandability) of the base material 4 can be reliably imparted to the base material 4 in the expanding step, and the base material 4 can be stretched during dicing in the step [3A]. Contamination of the adhesive tape 100 by cutting waste can be suppressed or prevented accurately.

Examples of such olefin resins include, but are not limited to, polyethylene resins such as linear low-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, ethylene-vinyl acetate copolymer (EVA), ethylene-methyl Ethylene copolymers such as methacrylate copolymers (EMMA), ethylene-methacrylate copolymers (EMAA) and ionomers such as ethylene ionomers as zinc ion cross-links, sodium ion cross-links or potassium ion cross-links. One or more of these can be used in combination.

Moreover, the base material 4 preferably contains a conductive material having conductivity. By containing such a conductive material, the conductive material functions as an antistatic agent, and the semiconductor chip 20 in the singulation step [3A] and the pick-up step [5A] generation of static electricity can be accurately suppressed or prevented.

Thus, when the substrate 4 contains a conductive material, the surface resistivity of the surface of the substrate 4 opposite to the adhesive layer 2 is set to 1.0×10 ¹³ (Ω/□) or less. preferably 1.0×10 ¹¹ (Ω/□) or less. This makes it possible to more accurately suppress or prevent the generation of static electricity in the semiconductor chip 20 in the singulation step [3A] and the pick-up step [5A].

The conductive material is not particularly limited as long as it has conductivity, and examples thereof include surfactants, permanent antistatic polymers (IDP), metal materials, metal oxide materials and carbon-based materials. One or more of these can be used in combination.

Examples of surfactants among these include anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants.

As the permanent antistatic polymer (IDP), for example, all IDPs such as polyether and polyolefin block polymer series, polyesteramide series, polyesteramide, polyetheresteramide, and polyurethane series can be used.

The metal material includes gold, silver, copper or silver-coated copper, nickel, etc., and these metal powders are preferably used.

Metal oxide materials include indium tin oxide (ITO), indium oxide (IO), antimony tin oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO ₂ ), zinc oxide (ZnO), and the like. and these metal oxide powders are preferably used.

Furthermore, carbon-based materials include carbon black, carbon nanotubes such as single-walled carbon nanotubes and multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, graphene, and the like.

Among these, the conductive material is preferably at least one of surfactants, permanent antistatic polymers (IDP), metal oxide materials and carbon black. Since these materials have small temperature dependence of resistivity, even if the base material 4 is heated during dicing of the semiconductor substrate 7 in the step [3A], the surface resistivity of the material does not change. The amount of change can be reduced.

In addition, in the case of preventing the generation of static electricity in the semiconductor chip 20 without containing a conductive material in the base material 4, an antistatic layer containing a conductive material is formed on the surface opposite to the adhesive layer 2. may be formed. This makes it possible to obtain the same effect as when the base material 4 contains a conductive material.

Further, the base material 4 may contain softening agents such as mineral oil, fillers such as calcium carbonate, silica, talc, mica, and clay, antioxidants, light stabilizers, lubricants, dispersants, neutralizers, colorants, and the like. may contain.

The thickness of the base material 4 is, for example, preferably 30 μm or more and 160 μm or less, more preferably 80 μm or more and 120 μm or less. When the thickness of the base material 4 is within this range, the function of the base material 4 is exhibited more reliably, and the dicing of the semiconductor substrate 7 in the step [3A] and the production of the semiconductor chip 20 in the step [5A] are performed. Pick-up can be carried out with excellent workability.

Furthermore, the base material 4 may have functional groups such as carboxyl groups, hydroxyl groups, and amino groups that are reactive with constituent materials contained in the adhesive layer 2 exposed on its surface.

Moreover, the base material 4 may be composed of a laminate (multilayer body) in which a plurality of layers composed of different resin materials are laminated.

<Adhesive layer 2>
The adhesive layer 2 adheres and supports the semiconductor substrate 7 when the semiconductor substrate 7 is diced in the step [3A], and applies energy to the adhesive layer 2 to adhere in the step [4A]. By hardening the layer 2, the semiconductor chip 20 obtained by dividing the semiconductor substrate 7 into individual pieces can be picked up in the step [5A]. Further, in the present invention, the adhesive tape 100 having this adhesive layer 2 is obtained by attaching the adhesive tape with a width of 20 mm to the surface of a silicon wafer having a diameter of 6 inches and a thickness of 500 μm, the surface of which is #2000 polished, and then , After being held at 23°C for 1 hour, after applying the energy, in an environment of 23°C, hold one end of the adhesive tape and peel it off at a speed of 1000 mm / min in a direction of 30°. B [cN / 20 mm] is the peeling strength measured when the , 0≦|BD|<110. In this way, the peeling strength B when peeled off in the direction (angle) of 30° and the peeling strength D when peeled off in the direction (angle) of 180° are 0 ≤ |B−D| <110 is satisfied.

Such an adhesive layer 2 is composed of a resin composition containing (1) a base resin having adhesiveness and (2) a curable resin for curing the adhesive layer 2 as main materials.

Each component contained in this resin composition will be described in detail below.
(1) Base Resin The base resin is contained in the resin composition in order to have adhesiveness and impart adhesiveness to the semiconductor substrate 7 to the adhesive layer 2 .

Such base resins include acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), and polyvinyl ether resins (adhesives). , styrene-based elastomer resins (adhesives), polyisoprene-based resins (adhesives), polyisobutylene-based resins (adhesives), and urethane-based resins (adhesives). However, among them, it is preferable to use an acrylic resin. By using an acrylic resin as the base resin, it is possible to relatively easily set the magnitude of |BD|, which is the relational expression of the peeling strength of the adhesive tape 100, within the above range. In addition, acrylic resins are excellent in heat resistance and can be obtained relatively easily and at low cost, and therefore are preferably used as base resins from this point of view as well.

The acrylic resin refers to a resin having a polymer (homopolymer or copolymer) containing (meth)acrylic ester as a main monomer component as a base polymer.

The (meth)acrylic acid ester is not particularly limited, but examples include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, and butyl (meth)acrylate. , isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, (meth)acrylate Octyl acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, (meth) ) undecyl acrylate, dodecyl (meth) acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, (meth) (meth)acrylic acid alkyl esters such as octadecyl acrylate, (meth)acrylic acid cycloalkyl esters such as cyclohexyl (meth)acrylate, (meth)acrylic acid aryl esters such as phenyl (meth)acrylate, etc. One or more of these can be used in combination. Among these, (meth)acrylic acid alkyl esters such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, octyl (meth)acrylate is preferably (Meth)acrylic acid alkyl esters, in particular, are excellent in heat resistance, and can be obtained relatively easily and inexpensively.

In this specification, (meth)acrylic acid ester is used in the sense of including both acrylic acid ester and methacrylic acid ester.

For the purpose of improving cohesive strength, heat resistance, etc., acrylic resins may be those containing functional group-containing copolymerizable monomers as monomer components constituting polymers, if necessary.

Examples of such functional group-containing copolymerizable monomers include, but are not limited to, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, hydroxyl group-containing monomers such as 6-hydroxyhexyl (meth)acrylate, epoxy group-containing monomers such as glycidyl (meth)acrylate, (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, isocrotone Carboxyl group-containing monomers such as acids, maleic anhydride, acid anhydride group-containing monomers such as itaconic anhydride, (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N - Methylol (meth) acrylamide, N-methylolpropane (meth) acrylamide, N-methoxymethyl (meth) acrylamide, N-butoxymethyl (meth) amide monomers such as acrylamide, aminoethyl (meth) acrylate, (meth) ) N,N-dimethylaminoethyl acrylate, amino group-containing monomers such as t-butylaminoethyl (meth)acrylate, cyano group-containing monomers such as (meth)acrylonitrile, ethylene, propylene, isoprene, butadiene, isobutylene styrene monomers such as styrene, α-methylstyrene and vinyl toluene; vinyl ester monomers such as vinyl acetate and vinyl propionate; vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether; Vinyl, halogen atom-containing monomers such as vinylidene chloride, alkoxy group-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N -vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N- Examples thereof include monomers having a nitrogen atom-containing ring such as (meth)acryloylmorpholine, and these may be used singly or in combination of two or more.

The content of these functional group-containing copolymerizable monomers is preferably 40% by weight or less, more preferably 10% by weight or less, relative to all monomer components constituting the acrylic resin.

In addition, the functional group-containing copolymerizable monomer may be contained at the terminal of the main chain in the polymer constituting the acrylic resin, contained in the main chain, furthermore, at the terminal of the main chain and in the main chain.

Furthermore, the functional group-containing copolymerizable monomer may contain a polyfunctional monomer for the purpose of cross-linking between polymers.

Examples of polyfunctional monomers include 1,6-hexanediol (meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and neopentyl glycol di(meth)acrylate. , pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, glycerin di(meth)acrylate, epoxy (meth)acrylate, polyester ( Meth)acrylate, urethane (meth)acrylate, divinylbenzene, butyl di(meth)acrylate, hexyl di(meth)acrylate and the like can be mentioned, and one or more of these can be used in combination.

Ethylene-vinyl acetate copolymers, vinyl acetate polymers, and the like can also be used as functional group-containing copolymerizable monomer components.

Such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. Moreover, polymerization of these monomer components can be carried out using a polymerization method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, a suspension polymerization method, or the like.

The acrylic resin should have a low content of low-molecular-weight substances from the viewpoint of preventing contamination of the semiconductor substrates 7 and the like with the acrylic resin when the semiconductor substrates 7 are diced in the step [3A]. is preferred. In this case, the weight average molecular weight of the acrylic resin is preferably set to 300,000 or more and 5,000,000 or less, more preferably set to 400,000 or more to 4,000,000 or less, and further preferably set to 500,000 or more to 1,500,000 or less. be. If the weight-average molecular weight of the acrylic resin is less than 500,000 depending on the type of the monomer component, etc., the contamination prevention property for the semiconductor substrate 7 and the like is lowered, and as a result, when the semiconductor chip 20 is removed, Adhesive residue may occur.

The acrylic resin to be used has a glass transition point of preferably -100°C or higher and 50°C or lower, more preferably -50°C or higher and 0°C or lower. By using an acrylic resin having a glass transition point within this range as the base resin, the size |BD| can be set within

In addition, the acrylic resin has a functional group (reactive functional group) having reactivity with a cross-linking agent or a photopolymerization initiator, such as a hydroxyl group or a carboxyl group (particularly, a hydroxyl group). is preferred. As a result, the cross-linking agent and the photopolymerization initiator are linked to the acrylic resin, which is the polymer component, so that leakage of the cross-linking agent and the photopolymerization initiator from the adhesive layer 2 can be suppressed or prevented accurately. As a result, the adhesiveness of the adhesive layer 2 to the semiconductor substrate 7 is reliably lowered by the energy beam irradiation in the step [4A].

(2) Curable resin The curable resin is, for example, a resin that is cured by irradiation with energy rays. As a result of this curing, the base resin is taken into the crosslinked structure of the curable resin, and as a result, the adhesive force of the adhesive layer 2 is lowered.

Such curable resins include, for example, low-molecular-weight polymers having at least two or more polymerizable carbon-carbon double bonds as functional groups in the molecule, which can be three-dimensionally crosslinked by irradiation with energy rays such as ultraviolet rays and electron beams. compounds are used. Specifically, for example, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, 1,4-butylene glycol di(meth)acrylate ) acrylates, polyethylene glycol di(meth)acrylates, esters of (meth)acrylic acid and polyhydric alcohols such as glycerin di(meth)acrylates, ester acrylate oligomers, 2-propenyl-di-3-butenyl cyanurate Cyanurate compounds having a carbon-carbon double bond-containing group such as tris (2-acryloxyethyl) isocyanurate, tris (2-methacryloxyethyl) isocyanurate, 2-hydroxyethyl bis (2-acrylic oxyethyl) isocyanurate, bis(2-acryloxyethyl) 2-[(5-acryloxyhexyl)-oxy]ethyl isocyanurate, tris(1,3-diacryloxy-2-propyl-oxycarbonylamino-n-hexyl ) isocyanurate, tris(1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, tris(4-acryloxy-n-butyl)isocyanurate, and the like. Examples include isocyanurate compounds having a heavy bond-containing group, commercially available oligoester acrylates, aromatic and aliphatic urethane acrylates, bisphenol A epoxy acrylates, etc., and one or Two or more kinds can be used in combination. Among these, at least one of urethane acrylate and bisphenol A-based epoxy acrylate is preferably included. As a result, the curable resin can be cured more reliably by irradiation with energy rays. In addition, the magnitude of |BD|, which is the relational expression of the peeling strength of the adhesive tape 100, can be relatively easily set within the above range.

The curable resin is not particularly limited, but it is preferable that two or more curable resins having different weight average molecular weights are mixed. By using such a curable resin, it is possible to easily control the degree of cross-linking of the resin by irradiation of the energy beam, thereby improving the pick-up property of the semiconductor chip main body 23 (semiconductor chip 20) in the step [5A]. be able to. As such a curable resin, for example, a mixture of a first curable resin and a second curable resin having a weight average molecular weight larger than that of the first curable resin may be used.

When the curable resin is a mixture of the first curable resin and the second curable resin, the weight average molecular weight of the first curable resin is preferably about 100 to 1000, preferably 200 to About 500 is more preferable. The weight average molecular weight of the second curable resin is preferably about 1,000 to 30,000, more preferably about 1,000 to 10,000, even more preferably about 2,000 to 5,000. Furthermore, the number of functional groups in the first curable resin is preferably 1 to 5, and the number of functional groups in the second curable resin is preferably 6 or more. By satisfying this relationship, the above effects can be exhibited more remarkably.

The curable resin is preferably blended in an amount of 30 to 200 parts by weight, more preferably 50 to 140 parts by weight with respect to 100 parts by weight of the base resin. As a result, both the curable resin and the base resin can reliably exhibit the functions achieved by adding the curable resin and the base resin to the resin composition.

In addition, when a double bond-introduced acrylic resin is used as the acrylic resin described above, this curable resin has a carbon-carbon double bond in the side chain, in the main chain, or at the end of the main chain. In the case of using one already possessed, the addition to the resin composition may be omitted. This is because, when the acrylic resin is a double bond-introduced acrylic resin, the adhesive layer 2 is activated by the function of the carbon-carbon double bond of the double bond-introduced acrylic resin by irradiation with energy rays. hardens, thereby reducing the adhesive strength of the adhesive layer 2 .

(3) Photopolymerization Initiator In addition, the adhesive layer 2 decreases its adhesiveness to the semiconductor substrate 7 when irradiated with energy rays. The resin composition preferably contains a photopolymerization initiator in order to facilitate initiation of polymerization of the curable resin.

Examples of photopolymerization initiators include 2,2-dimethoxy-1,2-diphenylethan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1 -propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]phenyl}-2-methyl-propan-1-one, benzyldiphenylsulfide, Tetramethylthiuram monosulfide, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1 -hydroxycyclohexylphenyl ketone, Michler's ketone, acetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2- Morpholinopropane-1, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, dibenzyl, α-hydroxycyclohexylphenyl ketone, benzyldimethylketal, 2-hydroxymethylphenylpropane, 2 -naphthalenesulfonyl chloride, 1-phenone-1,1-propanedione-2-(o-ethoxycarbonyl)oxime, benzophenone, benzoylbenzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4 ,4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acryloxybenzophenone, p-acryloxybenzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p-(meth)acryloxy Benzophenone-4-carboxylic acid esters of acrylates such as ethoxybenzophenone, 1,4-butanediol mono(meth)acrylate, 1,2-ethanediol mono(meth)acrylate, 1,8-octanediol mono(meth)acrylate , thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloroanthraquinone, camphorquinone, halogenated ketones, acylphosphinoxide, acylphosphonate, polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, 2-ethylanthraquinone, t-butylanthraquinone, 2,4,5-triarylimidazole dimer, etc., and one or more of these may be used in combination. .

Among these, benzophenone derivatives and alkylphenone derivatives are preferred. These compounds have a hydroxyl group as a reactive functional group in the molecule, and can be linked to a base resin or a curable resin via this reactive functional group, thereby enhancing their function as a photopolymerization initiator. You can make it work for sure.

The photopolymerization initiator is preferably blended in an amount of 0.1 parts by weight or more and 50 parts by weight or less, more preferably 0.5 parts by weight or more and 10 parts by weight or less per 100 parts by weight of the base resin. . By adjusting the blending amount of the photopolymerization initiator as described above, the function exhibited by adding the photopolymerization initiator to the resin composition can be reliably exhibited by the photopolymerization initiator. .

(4) Cross-linking agent Further, the resin composition forming the adhesive layer 2 may contain a cross-linking agent. By containing the cross-linking agent, the pressure-sensitive adhesive layer 2 can be adjusted to have appropriate hardness. In addition, the magnitude of |BD|, which is the relational expression of the peeling strength of the adhesive tape 100, can be relatively easily set within the above range.

The cross-linking agent is not particularly limited. Examples include metal chelate-based cross-linking agents, acid anhydride-based cross-linking agents, polyamine-based cross-linking agents, and carboxyl group-containing polymer-based cross-linking agents. Among these, isocyanate-based cross-linking agents are preferred.

Examples of the isocyanate-based cross-linking agent include, but are not limited to, a polyisocyanate compound of a polyisocyanate, a trimer of the polyisocyanate compound, and a trimer of a terminal isocyanate compound obtained by reacting a polyisocyanate compound with a polyol compound. Alternatively, a blocked polyisocyanate compound obtained by blocking a terminal isocyanate urethane prepolymer with phenol, oximes, or the like can be used.

Examples of polyvalent isocyanates include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane -2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenyl ether diisocyanate, 4 ,4′-[2,2-bis(4-phenoxyphenyl)propane]diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate and the like, and one or more of these are used in combination. be able to. Among these, at least one polyvalent isocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate and hexamethylene diisocyanate is preferred.

The cross-linking agent is preferably blended in an amount of 0.01 to 50 parts by weight, more preferably 5 to 50 parts by weight with respect to 100 parts by weight of the base resin. By adjusting the blending amount of the cross-linking agent as described above, the cross-linking agent can reliably exhibit the function exhibited by adding the cross-linking agent to the resin composition.

(5) Plasticizer The plasticizer improves the flexibility of the adhesive layer 2 whose adhesive strength is reduced by the application of energy, thereby improving the adhesive strength of the semiconductor substrate 7 to the adhesive tape 100. As a result, , the size of |BD|, which is the relational expression of the peel strength, can be relatively easily set within the range, so that the adhesive layer 2, that is, the resin composition can contain preferable.

Examples of the plasticizer include, but are not limited to, phthalate plasticizers such as DOP (dioctyl phthalate), DBP (dibutyl phthalate), DIBP (diisobutyl phthalate), DHP (diheptyl phthalate), DOA (di -2-ethylhexyl adipate), DIDA (diisodecyl adipate), DOS (di-2-ethylhexyl sebacate) and other aliphatic dibasic acid ester plasticizers, aromatic carboxylic acid esters such as ethylene glycol benzoates Plasticizers, trimellitic acid ester plasticizers such as TOTM (trioctyl trimellitate), adipate plasticizers, etc., may be used alone or in combination of two or more thereof. can.

The content of the plasticizer in the adhesive layer 2, i.e., the resin composition, is not particularly limited, but for example, it is preferably blended at 0.1 parts by weight or more and 5.0 parts by weight or less with respect to 100 parts by weight of the base resin. , 0.5 parts by weight or more and 3.0 parts by weight or less. As a result, the flexibility of the adhesive layer 2 can be reliably improved, so that the magnitude of |BD|, which is the relational expression of the peeling strength, can be easily set within the above range.

(6) Other components Furthermore, the resin composition constituting the adhesive layer 2 contains, in addition to the components (1) to (5) described above, other components such as a conductive material, a tackifier, and an anti-aging agent. , adhesion modifiers, fillers, colorants, flame retardants, softeners, antioxidants, plasticizers, surfactants, and the like.

Among these, the conductive material is not particularly limited as long as it has conductivity, and the same materials as those described as the conductive material contained in the base material 4 can be used.

By containing such a conductive material, the conductive material functions as an antistatic agent, and the semiconductor chip 20 in the singulation step [3A] and the pick-up step [5A] generation of static electricity is accurately suppressed or prevented.

When one of the substrate 4 and the adhesive layer 2 contains a conductive material, the substrate 4 preferably contains the conductive material. As a result, the generation of static electricity in the semiconductor chip 20 can be more accurately suppressed or prevented without reliably adhering the conductive material to the semiconductor chip 20 .

Among these, the tackifier is not particularly limited, but for example, rosin resin, terpene resin, coumarone resin, phenol resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic copolymer petroleum Resins and the like can be mentioned, and one or more of these can be used in combination.

As described above, by appropriately selecting the types and contents of the components (1) to (6) containing the components (1) and (2) as essential components contained in the adhesive layer 2, the peeling off The relational expression |B−D| between the intensities B and D may satisfy the relationship 0≦|B−D|<110, but the relational expression |B−D| It preferably satisfies the relationship of <90, and more preferably satisfies the relationship of 0≦|BD|<50. As a result, in the step [5A], when picking up the individualized semiconductor chip 20, the angle formed by the semiconductor chip 20 and the adhesive tape 100 when the adhesive tape 100 is peeled off from the semiconductor chip 20 Even if a change occurs, the semiconductor chip 20 can be picked up by stably peeling off the adhesive tape 100 from the semiconductor chip 20 .

Furthermore, the peel strength B measured when the adhesive tape 100 is peeled off at a speed of 1000 mm / min in a direction of 30 ° in an environment of 23 ° C. is 60 cN / 20 mm or more and 400 cN / 20 mm or less. 80 cN/20 mm or more and 170 cN/20 mm or less is more preferable. Since the magnitude of the peeling strength B is set within such a range, the semiconductor chip 20 and the adhesive tape 100 are separated from each other when picking up the separated semiconductor chip 20 in the step [5A]. Even when the formed angle becomes low, the semiconductor chip 20 can be picked up by stably peeling off the adhesive tape 100 from the semiconductor chip 20 .

In addition, the peel strength D measured when the adhesive tape 100 is peeled off at a speed of 1000 mm/min in a direction of 180° in an environment of 23° C. is 60 cN/20 mm or more and 400 cN/20 mm or less. 80 cN/20 mm or more and 170 cN/20 mm or less is more preferable. Since the magnitude of the peeling strength D is set within such a range, the semiconductor chip 20 and the adhesive tape 100 are separated from each other when picking up the separated semiconductor chip 20 in the step [5A]. Even when the formed angle becomes high, the semiconductor chip 20 can be picked up by stably peeling off the adhesive tape 100 from the semiconductor chip 20 .

In addition, an adhesive tape 100 with a width of 20 mm was attached to the surface of the silicon wafer whose surface was polished by #2000, and then held at 23 ° C. for 1 hour. After applying energy to the adhesive layer 2, , in an environment of 23 ° C., the peel strength measured when holding one end of the adhesive tape 100 and peeling it off at a speed of 300 mm / min in the direction of 30 ° is A [cN / 20 mm], 180 ° When the peel strength measured when peeled off at a speed of 300 mm / min in the direction of is C [cN / 20 mm], it is preferable to satisfy the relationship 0 ≤ | AC | < 60, It is more preferable to satisfy the relationship 0≦|A−C|<40.

Here, in the step [5A], the pickup speed when picking up the semiconductor chip 20, that is, the peeling speed (peeling speed) for peeling the adhesive tape 100 from the semiconductor chip 20, depends on the type and size of the semiconductor chip 20. etc., may change. Therefore, by setting the relational expression |AC| , in the step [5A], when picking up the separated semiconductor chips 20, even if the speed for picking up the semiconductor chips 20 is set relatively slow, the adhesive tape 100 is removed from the semiconductor chips 20. can be stably peeled off and the semiconductor chip 20 can be picked up.

In addition, the peel strength A measured when the adhesive tape 100 is peeled off at a speed of 300 mm/min in a direction of 30° in an environment of 23° C. is 60 cN/20 mm or more and 400 cN/20 mm or less. 80 cN/20 mm or more and 170 cN/20 mm or less is more preferable. Since the magnitude of the peeling strength A is set within such a range, the semiconductor chip 20 and the adhesive tape 100 are separated from each other when picking up the separated semiconductor chip 20 in the step [5A]. Even when the formed angle becomes low, the semiconductor chip 20 can be picked up by stably peeling off the adhesive tape 100 from the semiconductor chip 20 .

Furthermore, the peel strength C measured when the adhesive tape 100 is peeled off at a speed of 300 mm/min in a direction of 180° in an environment of 23° C. is 60 cN/20 mm or more and 400 cN/20 mm or less. 80 cN/20 mm or more and 170 cN/20 mm or less is more preferable. Since the magnitude of the peeling strength C is set within such a range, the semiconductor chip 20 and the adhesive tape 100 are separated from each other when picking up the separated semiconductor chip 20 in the step [5A]. Even when the formed angle becomes high, the semiconductor chip 20 can be picked up by stably peeling off the adhesive tape 100 from the semiconductor chip 20 .

Also, when the angle formed by the semiconductor chip 20 and the adhesive tape 100 when peeling the adhesive tape 100 from the semiconductor chip 20 is the same, the peeling speed (peeling speed) for peeling the adhesive tape 100 from the semiconductor chip 20 It is preferable that the variation in the peeling strength in is set within a certain range. As a result, when picking up the individualized semiconductor chips 20, even if the speed at which the semiconductor chips 20 are picked up changes, the adhesive tape 100 can be stably peeled off from the semiconductor chips 20. A semiconductor chip 20 can be picked up.

Therefore, in the present invention, the relationship B /A preferably satisfies the relationship 0.90≦B/A≦1.20, and more preferably satisfies the relationship 1.00≦B/A≦1.10.

In addition, the relational expression D/C, which indicates the degree of variation in the peeling strengths C and D measured when the adhesive tape 100 is peeled off in the direction of 180° at a speed of 300 mm/min or 1000 mm/min, is It preferably satisfies the relationship 0.90≤D/C≤1.20, and more preferably satisfies the relationship 1.00≤D/C≤1.10.

By setting the magnitudes of the relational expression B/A and the relational expression D/C within the above ranges, variations in the peeling strength at each peeling speed (peeling speed) at which the adhesive tape 100 is peeled from the semiconductor chip 20 are Since it can be said that it is set within a certain range, even if the speed at which the semiconductor chip 20 is picked up changes, the adhesive tape 100 can be more stably peeled from the semiconductor chip 20 and the semiconductor chip 20 can be removed. A chip 20 can be picked up.

Furthermore, the pressure-sensitive adhesive layer 2 had a complex viscosity η ^* (at 23° C. after application) of 1.0×10 ⁷ measured at a temperature of 23° C., a strain amount of 1 mrad, and a frequency of 1 Hz using a rheometer after applying energy. It is preferably mPa·s or more and 6.0×10 ⁹ mPa·s or less, and more preferably 1.0×10 ⁸ mPa·s or more and 1.0×10 ⁹ mPa·s or less. Accordingly, the relational expression |AC| of the peeling strengths A and C and |BD| of the peeling strengths B and D can be relatively easily set within the above range. Furthermore, in the step [3A], it is possible to appropriately suppress or prevent the occurrence of adhesive residue, which is caused by part of the adhesive layer 2 adhering to the side surface of the semiconductor chip 20 .

Although the thickness of the adhesive layer 2 is not particularly limited, it is preferably 5 μm or more and 50 μm or less, and more preferably 5 μm or more and 10 μm or less. By setting the thickness of the adhesive layer 2 within such a range, the adhesive layer 2 exhibits good adhesive strength to the semiconductor substrate 7 in the singulation step [3A], and the pick-up step [5A]. , the adhesive layer 2 and the semiconductor substrate 7 can be provided with adhesiveness to the extent that good releasability is exhibited.

The adhesive layer 2 may be composed of a laminate (multilayer body) in which a plurality of layers composed of different resin compositions are laminated.

Furthermore, in the adhesive tape 100 having a structure in which the adhesive layer 2 is laminated on the base material 4, when the adhesive tape 100 is viewed from above, the adhesive layer 2 is formed at the interface between the base material 4 and the adhesive layer 2. The number of bubbles having an area of 100 μm ² or more is preferably 15.0 cells/mm ² or less, more preferably 0.01 cells/mm ² or more and 7.0 cells/mm ² or less, More preferably, it is 0.1 pieces/mm ² or more and 2.0 pieces/mm ² or less. By controlling the number of bubbles formed at the interface between the base material 4 and the adhesive layer 2 and setting the number of bubbles having an area of 100 μm ² or more as described above, in the step [5A], the semiconductor chip When picking up the semiconductor chip 20 and peeling off the adhesive tape 100 from the semiconductor chip 20 , it is possible to more accurately suppress or prevent the adhesive residue from being left on the semiconductor chip 20 .

Next, the pressure-sensitive adhesive tape 100 having such a configuration can be manufactured, for example, as follows.

<Method for manufacturing adhesive tape>
FIG. 7 is a longitudinal sectional view for explaining a method of manufacturing the adhesive tape shown in FIG. 6. FIG. In the following description, the upper side in FIG. 7 is called "upper", and the lower side is called "lower".

[1B] First, the substrate 4 is prepared (see FIG. 7(a)).
The method for manufacturing the substrate 4 is not particularly limited, but examples thereof include general molding methods such as calendaring, inflation extrusion, T-die extrusion, and wet casting. In addition, when the base material 4 is composed of a laminate, as a method for manufacturing the base material 4 having such a configuration, for example, a molding method such as a co-extrusion method or a dry lamination method is used.

Moreover, the base material 4 can be used without being stretched, and if necessary, it may be used after being uniaxially or biaxially stretched.

[2B] Next, the adhesive layer 2 is formed on the upper surface of the substrate 4 (see FIG. 7(b)).
The surface (upper surface) of the substrate 4 was subjected to corona treatment, chromic acid treatment, matte treatment, ozone exposure treatment, flame exposure treatment, and high voltage shock treatment for the purpose of improving the adhesion between the substrate 4 and the adhesive layer 2. Surface treatments such as exposure treatment, ionizing radiation treatment, primer treatment, and anchor coating treatment may be applied.

In addition, the adhesive layer 2 is formed by coating or spraying a varnish-like liquid material obtained by dissolving a resin composition, which is a constituent material of the adhesive layer 2, on the base material 4, and then volatilizing the solvent. Obtainable.

Examples of the solvent include, but are not particularly limited to, methyl ethyl ketone, acetone, toluene, ethyl acetate, dimethylformaldehyde, etc. One or more of these may be used in combination.

Also, the application or spraying of the liquid material onto the base material 4 can be performed using methods such as die coating, curtain die coating, gravure coating, comma coating, bar coating and lip coating.

[3B] Next, with respect to the adhesive layer 2 formed on the base material 4, the base material 4 is left in the thickness direction of the adhesive layer 2 so that the center side and the outer peripheral side are separated. By removing a part of the adhesive layer 2 annularly, the adhesive layer 2 is provided with a central portion 122 and an outer peripheral portion 121 (see FIG. 7(c)).

As a method for removing a part of the adhesive layer 2 in an annular shape, for example, there is a method of punching so as to surround the area to be removed, and then removing the adhesive layer 2 located in this punched area.

Also, the punching of the region to be removed can be performed by using, for example, a method using a roll-shaped mold or a method using a press mold. Among them, a method using a roll-shaped mold capable of continuously manufacturing the adhesive tape 100 is preferable.

In this step, part of the adhesive layer 2 is punched out in a ring shape (circular shape) to form the center part 122 and the outer peripheral part 121. In the manufacturing method of 1, any shape may be used as long as the outer peripheral portion 121 of the adhesive layer 2 can be fixed by the wafer ring. Specifically, examples of the shape to be punched include, in addition to the circular shape described above, an elliptical shape, an oval shape such as a bale shape, and a polygonal shape such as a square shape and a pentagonal shape.

[4B] Next, by laminating the separator 1 on the adhesive layer 2 formed on the substrate 4, an adhesive tape 100 in which the adhesive layer 2 is coated with the separator 1 is obtained (Fig. 7(d) reference.).

The method for laminating the separator 1 on the adhesive layer 2 is not particularly limited, but for example, a lamination method using a roll or a lamination method using a press can be used. Among these, the lamination method using rolls is preferable from the viewpoint of productivity that enables continuous production.

The separator 1 is not particularly limited, but examples thereof include a polypropylene film, a polyethylene film, a polyethylene terephthalate film, and the like.

Moreover, since the separator 1 is peeled off when the adhesive tape 100 is used, the separator 1 whose surface has been subjected to a release treatment may be used. Examples of the mold release treatment include a treatment of coating the surface of the separator 1 with a mold release agent, a treatment of making the surface of the separator 1 finely uneven, and the like. Examples of release agents include silicone-based, alkyd-based, fluorine-based, and the like.

The pressure-sensitive adhesive tape 100 coated with the separator 1 can be formed through the steps described above.

The adhesive tape 100 coated with the separator 1 manufactured in this embodiment is used after the adhesive tape 100 is peeled off from the separator 1 in the above-described method for manufacturing a semiconductor device using the adhesive tape 100.

When peeling off the separator 1 from the adhesive layer 2 covered by the separator 1, it is preferable to peel the separator 1 at an angle of 90° or more and 180° or less with respect to the surface of the adhesive layer 2. By setting the angle at which the separator 1 is peeled off within the range described above, the peeling at areas other than the interface between the adhesive layer 2 and the separator 1 can be reliably prevented.

Although the adhesive tape of the present invention has been described above, the present invention is not limited thereto.

For example, each layer of the pressure-sensitive adhesive tape of the present invention may be added with an optional component that can exhibit the same function, or the base material is a single layer as described in the above embodiment. In addition to the structure, it may be composed of a plurality of layers, and for example, an antistatic layer may be provided on the surface of the base material opposite to the adhesive layer.

In addition, the structure of each layer of the adhesive tape can be replaced with any one capable of exhibiting the same function, or any structure can be added.

Furthermore, depending on the configuration of the semiconductor device formed using the adhesive tape, the formation of the mold portion 17 included in the semiconductor device 10 may be omitted.

In addition, by cutting (dicing) the semiconductor substrate to which the adhesive tape is attached in the thickness direction, it is not limited to the case where the semiconductor chip is obtained as a cut piece, that is, a part, and the substrate is temporarily fixed on the adhesive tape. The adhesive tape of the present invention can also be applied to various substrate processing applications in which it is necessary to separate the parts from the adhesive tape after obtaining the parts by cutting in the thickness direction. Substrates to which the adhesive tape of the present invention is attached include, in addition to the semiconductor substrates (semiconductor wafers) described above, glass substrates such as soda lime glass, borosilicate glass, quartz glass, alumina, silicon nitride, and titanium oxide. and the like, resin material substrates such as acryl, polycarbonate, and rubber, metal material substrates, and the like.

Next, specific examples of the present invention will be described.
It should be noted that the present invention is not limited to the description of these examples.

1. Preparation of Raw Materials First, the raw materials used for manufacturing the adhesive tapes of each example and each comparative example are shown below.

(Olefin resin 1)
As the olefinic resin 1, low-density polyethylene (LDPE: “Sumikasen F200-0” manufactured by Sumitomo Chemical Co., Ltd., specific gravity: 0.92 g/cm ³ ) was prepared.

(Antistatic agent 1)
As the antistatic agent 1, a polyether-based antistatic agent (manufactured by Sanyo Chemical Industries, Ltd., "Pelectron PVL") was prepared.

(Base resin 1-5)
As base resins 1 to 5, at least two of butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, acrylic acid, 2-hydroxyethyl acrylate, N,N-dimethylacrylamide, and vinyl acetate are mixed, An acrylic copolymer was prepared by solution polymerization in a toluene solvent by a conventional method.

The glass transition points and weight average molecular weights of the base resins (acrylic copolymers) 1 to 5 were as shown below.

Base resin 1 (glass transition point: -14°C, weight average molecular weight: 500,000)
Base resin 2 (glass transition point: -37°C, weight average molecular weight: 600,000)
Base resin 3 (glass transition point: -45°C, weight average molecular weight: 500,000)
Base resin 4 (glass transition point: -10°C, weight average molecular weight: 650,000)
Base resin 5 (glass transition point: -60°C, weight average molecular weight: 500,000)

(Curable resin 1)
Urethane acrylate 1 (manufactured by Nippon Kayaku Co., Ltd., product number: UX-5000) was prepared as curable resin 1.

(Curable resin 2)
Urethane acrylate 2 (manufactured by Miwon Specialty Chemical, product number: SC2152) was prepared as the curable resin 2 .

(Curable resin 3)
As curable resin 3, bis A type epoxy acrylate 1 (manufactured by Nippon Kayaku Co., Ltd., product number: R-130) was prepared.

(Crosslinking agent 1)
As the cross-linking agent 1, polyisocyanate (manufactured by Tosoh Corporation, product number: Coronate L) was prepared.

(Photoinitiator 1)
As a photoinitiator 1, benzyl dimethyl ketal (manufactured by Tokyo Chemical Industry Co., Ltd.) was prepared.

(Plasticizer 1)
As the plasticizer 1, a polyester plasticizer (manufactured by DIC, product number: W-230H) was prepared.

2. Preparation of adhesive tape [Example 1]
An olefinic resin 1 was extruded by an extruder to prepare a substrate 4 having a thickness of 100 μm.

Next, base resin 1 (100 parts by weight), curable resin 1 (92 parts by weight), cross-linking agent 1 (10 parts by weight), photoinitiator 1 (4 parts by weight) and plasticizer 1 (2 parts by weight) A liquid material containing a resin composition containing was prepared. This liquid material is bar-coated on the base material 4 so that the thickness of the adhesive layer 2 after drying is 20 μm, and then dried at 80° C. for 1 minute. ) to obtain an adhesive tape 100 of Example 1 by forming an adhesive layer 2 having a thickness of 10 μm.

Regarding the adhesive layer 2 included in the adhesive tape 100, after applying energy for irradiating the adhesive layer 2 with ultraviolet rays under the conditions of ultraviolet irradiation intensity: 55 W / cm ² and ultraviolet irradiation amount: 200 mj / cm ² , rheometer (Anton Pearl The complex viscosity η ^* (at 23° C. after application) was measured at a temperature of 23° C., a strain amount of 1 mrad, and a frequency of 1 Hz using a “MCR102” manufactured by Co., Ltd., and it was 7.5E+08 mPa·s.

[Examples 2 to 5, Comparative Examples 1 and 2]
As each constituent material contained in the resin composition used for forming the base material 4 and each constituent material contained in the resin composition used for forming the adhesive layer 2, those shown in Table 1 are used, and further , Except that the content of each constituent material was changed as shown in Table 1, and the base material 4 and the adhesive layer 2 having the thicknesses shown in Table 1 were formed in the same manner as in Example 1, Example 2 to 5 and Comparative Examples 1 and 2 were produced.

3. Evaluation The obtained adhesive tapes of Examples and Comparative Examples were evaluated by the following methods.

3-1. Evaluation of resistivity of base material For the adhesive tapes of each example and each comparative example, the surface resistivity of the side opposite to the adhesive layer 2 on the base material 4 was measured according to JIS K 6911 with a resistance value measuring device (Advantest Co., Ltd.). manufactured by "R8340").

3-2. Measurement of Peeling Strength from Silicon Wafer For the adhesive tapes of each example and each comparative example, the adhesive layer 2 was irradiated with ultraviolet rays under the conditions of an ultraviolet irradiation intensity of 55 W/cm ² and an ultraviolet irradiation amount of 200 mj/cm ² . After applying energy, the peel strength B (peel strength B) measured when holding one end of the adhesive tape and peeling it off at a speed of 1000 mm / min in the direction of 30 ° in an environment of 23 ° C. , was measured using the peel analyzer.

Furthermore, for the adhesive tapes of each example and each comparative example, after applying energy for irradiating ultraviolet rays to the adhesive layer 2 under the conditions of ultraviolet irradiance: 55 W/cm ² and ultraviolet irradiation amount: 200 mj/cm ² , 23 The peel strength D (peel strength D) measured when holding one end of the adhesive tape and peeling it off at a speed of 1000 mm / min in the direction of 180 ° in an environment of ° C. is measured using the peel analysis device. measured by

Then, based on the measured peeling strength B and peeling strength D, a relational expression |BD| indicating the relationship between the absolute values of these differences was obtained.

In addition, the adhesive tape of each example and each comparative example having a width of 20 mm was attached to the surface of a silicon wafer having a diameter of 6 inches and a thickness of 500 μm, the surface of which was polished with #2000. After being held for 1 hour, after applying energy for irradiating the adhesive layer 2 with ultraviolet rays under the conditions of ultraviolet irradiation intensity: 55 W/cm ² and ultraviolet irradiation amount: 200 mj/cm ² , in accordance with JIS G 3469, In an environment of 23 ° C., hold one end of the adhesive tape and peel it off at a speed of 300 mm / min in the direction of 30 °. It was measured using “VPA-H100” manufactured by Interface Science Co., Ltd.).

Further, for the adhesive tapes of each example and each comparative example, after applying energy for irradiating ultraviolet rays to the adhesive layer 2 under the conditions of ultraviolet irradiance: 55 W/cm ² and ultraviolet irradiation amount: 200 mj/cm ² , 23 The peel strength C (peel strength C) measured when holding one end of the adhesive tape and peeling it off at a speed of 300 mm / min in the direction of 180 ° in an environment of ° C. is measured using the peel analysis device. measured by

Then, based on the measured peeling strength A and peeling strength C, a relational expression |AC| indicating the relationship between the absolute values of these differences was obtained.

3-3. Evaluation of pick-up property of silicon chip and peelability of adjacent chip <1> After preparing a silicon wafer (manufactured by SUMCO) composed of silicon and grinding it by a conventional method to obtain this silicon wafer with a thickness of 230 μm. , the adhesive tape 100 of each example and each comparative example was fixed to the ground surface after grinding with a #2000 wheel to a thickness of 200 μm with the adhesive layer 2 facing the silicon wafer. After that, the silicon wafer was cut in the thickness direction until it reached the middle of the base material 4 to obtain a plurality of silicon chips each having a size of 6 mm long and 6 mm wide. After that, the adhesive layer 2 was irradiated with ultraviolet rays under the conditions of an ultraviolet irradiation intensity of 55 W/cm ² and an ultraviolet irradiation amount of 200 mj/cm ² to impart energy and cure the adhesive layer 2 .

<2> Next, the silicon chip was pushed up using four needles each having a tip diameter of 100 μm with a needle pushing-up amount of 500 [μm].

<3> Next, the silicon chip was picked up by suction with a vacuum collet while the silicon chip was being pushed up by the needle.

By going through the steps <1> to <3> as described above, 50 silicon chips were repeatedly picked up by suction for each adhesive tape of each example and each comparative example.

In step <2>, when pushing up the silicon chip with the needle, the push-up speed of the needle was changed in 5 steps between 300 mm/min and 1000 mm/min, and 10 chips were set at each step speed. A pick-up of a silicon chip was carried out.

Then, regarding the adhesive tapes of each example and each comparative example, regarding the obtained silicon chips, the success or failure (pickup performance) of picking up the silicon chip by adsorption of the silicon chip, and the peeling of the adhesive tape on the silicon chip adjacent to the picked up silicon chip. (Peelability of adjacent chips) was observed, and these were evaluated according to the following criteria.

(Evaluation of pick-up property)
◎: 50 silicon chips could be picked up ○: 48 or more but less than 50 silicon chips
I was able to pick up △: For 40 or more and less than 48 silicon chips,
Could be picked up ×: For less than 40 silicon chips,
could pick up

(Evaluation of peelability of adjacent chips)
◎: About 50 silicon chips picked up,
No peeling was observed in the adjacent silicon chips. ○: For 50 silicon chips picked up,
Although no problematic delamination was observed in the adjacent silicon chips,
In some of them, partial slight peeling was observed at the chip end △: About 45 or more and less than 50 silicon chips picked up,
No detachment was observed in adjacent silicon chips ×: For less than 45 silicon chips picked up,
No delamination was observed in adjacent silicon chips

As shown in Table 1, in the adhesive tape of each example, the relational expression |BD| of the peel strengths B and D measured when the adhesive tape 100 is peeled off from the silicon wafer is 0≦|B -D|<110 is satisfied, and the adhesive tape can be stably removed from the silicon chip even when the angle formed by the silicon chip and the adhesive tape changes when the adhesive tape is peeled off from the silicon chip. The result showed that the silicon chip could be picked up by peeling.

On the other hand, the pressure-sensitive adhesive tapes of the respective comparative examples do not satisfy the relational expression |BD| of 0≦|BD|<110. The result showed that the adhesive tape could not be stably peeled off from the silicon chip when the adhesive tape was applied.

REFERENCE SIGNS LIST 1 separator 2 adhesive layer 4 base material 7 semiconductor substrate 9 wafer ring 10 semiconductor device 17 mold section 20 semiconductor chip 21 terminal 23 semiconductor chip body section 30 interposer 41 terminal 70 bump 80 sealing layer 81 connection section 85 solder bump 100 adhesive tape REFERENCE SIGNS LIST 101 joining portion 102 peeling portion 121 outer peripheral portion 122 central portion 200 dicer table 300 table 310 central portion 320 outer peripheral portion 400 stage 410 ejector head 430 needle

Claims (11)

An adhesive tape comprising a laminate comprising a base material containing a resin material and an adhesive layer laminated on one side of the base material, and used to temporarily fix at least one of a substrate and a component. There is
The adhesive layer contains a base resin having adhesiveness and a curable resin that is cured by application of energy, and the application of energy reduces the adhesive force to the substrate and components laminated on the adhesive layer. and
The adhesive tape is prepared by attaching the adhesive tape with a width of 20 mm to the surface of a silicon wafer with a diameter of 6 inches and a thickness of 500 μm, the surface of which is polished with #2000, and then held at 23 ° C. for 1 hour. , B [cN /20 mm], and the peel strength measured when peeled off at a speed of 1000 mm / min in the direction of 180 ° is D [cN / 20 mm], 0 ≤ |BD | <110 An adhesive tape characterized by satisfying relationships. The peel strength measured when the adhesive tape is peeled off at a speed of 300 mm / min in a direction of 30 ° is A [cN / 20 mm], and at a speed of 300 mm / min in a direction of 180 °, The pressure-sensitive adhesive tape according to claim 1, wherein the peel strength measured when the pressure-sensitive adhesive tape is peeled off is C [cN/20 mm], satisfying the relationship 0≦|AC|<60. The pressure-sensitive adhesive tape according to claim 2, wherein the peel strength A is 60 cN/20 mm or more and 400 cN/20 mm or less. After applying the energy, the adhesive layer has a complex viscosity η ^* of 1.0 × ¹⁰ mPa s or more and 6.0 × The pressure-sensitive adhesive tape according to any one of claims 1 to 3, which has a viscosity of 10 ⁹ mPa·s or less. The pressure-sensitive adhesive tape according to any one of claims 1 to 4, wherein the base resin is an acrylic resin. The pressure-sensitive adhesive tape according to any one of claims 1 to 5, wherein the curable resin is at least one of urethane acrylate and bisphenol A-based epoxy acrylate. The pressure-sensitive adhesive tape according to any one of claims 1 to 6, wherein the pressure-sensitive adhesive layer further contains a plasticizer. The adhesive tape is cut from the substrate to reach halfway in the thickness direction of the base material in a state where the substrate is fixed on the adhesive layer, and the substrate is separated into a plurality of pieces. After that, while stretching the adhesive tape in the surface direction, the part is pushed up from the base material side and pulled out from the opposite side of the base material, thereby separating from the adhesive layer. 8. The adhesive tape according to any one of claims 1 to 7, which is used when applying pressure. The adhesive tape according to any one of claims 1 to 8, wherein the adhesive layer has a thickness of 5 µm or more and 50 µm or less. The pressure-sensitive adhesive tape according to any one of claims 1 to 9, wherein the substrate has a surface resistivity of 1.0 x 1013 ⁽ Ω/□) or less on the surface opposite to the pressure-sensitive adhesive layer. When the pressure-sensitive adhesive tape is viewed from above, the number of bubbles formed at the interface between the base material and the pressure-sensitive adhesive layer having an area of 100 μm ² or more is 15.0/mm ² or less. Item 11. The adhesive tape according to any one of Items 1 to 10.

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