JP7226501B1 - Adhesive tapes and substrates for adhesive tapes - Google Patents

Abstract

Kind Code: A1 When a component attached to an adhesive tape is picked up in a state of being pushed up, the component is picked up with excellent precision while accurately preventing breakage of the base material of the adhesive tape caused by the pushing up. and an adhesive tape base material used for obtaining the adhesive tape. Kind Code: A1 An adhesive tape 100 includes a base material 4 and an adhesive layer 2, and is used by temporarily fixing at least one of a substrate and components. Satisfying that the piercing strength measured in accordance with the prescribed piercing strength test is 4.0 N or more and 8.0 N or less, and the displacement until piercing is 2.0 mm or more and 8.0 mm or less. do. [Selection drawing] Fig. 2

Description

TECHNICAL FIELD The present invention relates to an adhesive tape and a base material for the adhesive tape, which are used to temporarily fix a substrate and parts.

In recent years, the demand for high-density and high-integration semiconductor devices has increased in response to the increasing sophistication of electronic equipment and the expansion of mobile applications, and the increase in capacity and density of IC packages is progressing.

As a method for manufacturing these semiconductor devices, for example, first, an adhesive tape is attached to a semiconductor substrate (semiconductor wafer) as a substrate, and while the periphery of the semiconductor substrate is fixed with a wafer ring, a dicing process using a dicing saw is performed. By cutting the semiconductor substrate in the thickness direction, the semiconductor substrate is cut and separated (individualized) into individual semiconductor elements (semiconductor chips). Next, after an expanding step of forming a gap between adjacent semiconductor elements by radially extending the adhesive tape using a wafer ring, the individualized semiconductor elements are pushed up using needles. , to perform a pick-up process to pick up. Next, the picked up semiconductor element is transferred to a mounting step for mounting it on a metal lead frame or substrate (eg, tape substrate, organic hard substrate, etc.). The picked-up semiconductor element is adhered to a lead frame or substrate via, for example, an underfill material in a mounting process, and then the semiconductor element is sealed on the lead frame or substrate with a sealing portion to form a semiconductor device. manufactured.

In recent years, various studies have been made on adhesive tapes (dicing tapes) used for manufacturing such semiconductor devices (see, for example, Patent Document 1).

This adhesive tape generally has a substrate (film substrate) and an adhesive layer formed on this substrate, and the semiconductor substrate is fixed by the adhesive layer. In the pressure-sensitive adhesive tape having such a configuration, a pick-up step of picking up the semiconductor element is performed after the dicing step of dicing the semiconductor substrate, as in the method of manufacturing the semiconductor device described above. That is, in the pick-up process after the dicing process, the semiconductor elements are pushed up using a needle, and while this state is maintained, the semiconductor elements are picked up by suction with a vacuum collet or air tweezers. ing.

However, when manufacturing a semiconductor device using this adhesive tape, there are problems as described below in the pick-up step of picking up the semiconductor element in a state where the semiconductor element is pushed up using a needle. That is, in the pick-up process, it is necessary to push up the semiconductor element with a needle having a sufficient size to pick up the semiconductor element. Breakage occurs, and as a result, the tip of the needle reaches the adhesive layer side of the adhesive tape, resulting in defects in the semiconductor element or adhesive residue in which a part of the adhesive layer remains on the semiconductor element. There was a problem.

Moreover, such a problem is not limited to obtaining semiconductor elements as parts by cutting a semiconductor substrate (semiconductor wafer) as a substrate in the thickness direction. The same problem occurs when various substrates such as metal substrates are cut (singulated) in the thickness direction to obtain individualized parts.

JP 2009-245989 A

The present invention accurately prevents breakage of the base material of the adhesive tape caused by the pushing up when picking up the parts attached to the adhesive tape while picking up the parts with excellent accuracy. To provide an adhesive tape that can be picked up and a base material for the adhesive tape used when obtaining the adhesive tape.

Such objects are achieved by the present invention described in (1) to ( 9 ) below.
(1) A base material and an adhesive layer containing a base resin having adhesiveness as a main material and laminated on one side of the base material for temporarily fixing at least one of a substrate and parts. , then, an adhesive tape used to pick up the temporarily fixed at least one kind ,
The adhesive layer was formed by attaching an adhesive tape with a width of 20 mm to the surface of a silicon wafer whose surface was polished by #2000, and then holding it at 23 ° C. for 1 hour. Holding one end of the adhesive tape and peeling it off at a speed of 1000 mm / min in a direction of 30 °, the peel strength measured is 100 cN / 20 mm or more and 600 cN / 20 mm or less,
The base material has a piercing strength of 4.0 N or more and 8.0 N or less measured according to the piercing strength test specified in JIS Z 1707, and a displacement until it is pierced is 2.0 mm or more. An adhesive tape having a thickness of 8.0 mm or less.

(2) The pressure-sensitive adhesive tape according to (1) above, wherein the substrate contains at least one of polyolefin-based resin, polyvinyl chloride-based resin and polystyrene-based resin.

(3) The adhesive tape according to (2) above, wherein the polyolefin resin is at least one of polypropylene and polyethylene copolymers.

(4) The pressure-sensitive adhesive tape according to any one of (1) to (3) above, wherein the pressure-sensitive adhesive layer does not reduce the pressure-sensitive adhesive strength to the components laminated on the pressure-sensitive adhesive layer when energy is applied.

(5) The pressure-sensitive adhesive tape according to any one of (1) to (4) above, wherein the substrate has a thickness of 70 μm or more and 150 μm or less.

(6) The adhesive tape is cut so as to reach halfway in the thickness direction of the base material from the substrate while the substrate is fixed on the adhesive layer, thereby singulating the substrate. After that, the adhesive tape is stretched in the surface direction, and the parts are pushed up from the base material side and pulled out from the opposite side of the base material. The pressure-sensitive adhesive tape according to any one of the above (1) to (5), which is used when separating from a layer.

(7) The substrate has, on the surface opposite to the adhesive layer, an average length Sm of roughness curve elements, which is a parameter representing surface roughness defined in JIS B 0601 (2013), of 30 μm or more. The pressure-sensitive adhesive tape according to any one of (1) to (6) above, which is 100 μm or less.
(8) The adhesive tape according to any one of (1) to (7) above, which is used for temporarily fixing at least the component out of the substrate and the component, and then picking up the component. .

( 9 ) A base material for an adhesive tape,
On one side of the adhesive tape base material, an adhesive layer containing a base resin having adhesiveness as a main material is laminated, and at least one of the substrate and the component is temporarily fixed to the adhesive layer. , then used to pick up the temporarily fixed at least one ,
The adhesive layer was formed by attaching an adhesive tape with a width of 20 mm to the surface of a silicon wafer whose surface was polished by #2000, and then holding it at 23 ° C. for 1 hour. Holding one end of the adhesive tape and peeling it off at a speed of 1000 mm / min in a direction of 30 °, the peel strength measured is 100 cN / 20 mm or more and 600 cN / 20 mm or less,
The base material for the adhesive tape has a puncture strength of 4.0 N or more and 8.0 N or less measured in accordance with the puncture strength test specified in JIS Z 1707, and a displacement of 2 until it penetrates. A substrate for an adhesive tape, characterized by having a thickness of 0.0 mm or more and 8.0 mm or less.

According to the present invention, the base material of the adhesive tape has a puncture strength of 4.0 N or more and 8.0 N or less measured according to the puncture strength test specified in JIS Z 1707, and It is satisfied that the displacement until breakthrough is 2.0 mm or more and 8.0 mm or less. Therefore, when picking up individualized parts in a state where they are pushed up, even if the parts are pushed up with a sufficient size to pick up the parts, the base material of the adhesive tape will not break. It is possible to pick up the parts with excellent accuracy while accurately preventing the occurrence. Therefore, it is possible to accurately prevent the occurrence of defects in parts and the occurrence of adhesive residue where part of the adhesive layer remains on the part due to the tip of the needle used for pushing up reaching the adhesive layer side of the adhesive tape. can be suppressed or prevented.

1 is a vertical cross-sectional view showing an example of a semiconductor device manufactured using the adhesive tape of the present invention; FIG. 2 is a longitudinal sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of the present invention; FIG. 2 is a longitudinal sectional view for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of the present invention; FIG. FIG. 3 is an enlarged cross-sectional view of the periphery of a needle positioned in a region [A] surrounded by a dotted line in FIG. 2; It is a longitudinal section showing an embodiment of an adhesive tape. FIG. 6 is a longitudinal sectional view for explaining a method of manufacturing the adhesive tape shown in FIG. 5;

The adhesive tape and adhesive tape substrate of the present invention will be described in detail below.
First, prior to describing the adhesive tape and adhesive tape substrate of the present invention, a semiconductor device manufactured using the adhesive tape of the present invention will be described.

<Semiconductor device>
FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured using the adhesive tape of the present invention. In the following description, the upper side in FIG. 1 is called "upper", and the lower side is called "lower". In addition, in each drawing referred to in this specification, the dimensions in the left-right direction and/or the thickness direction are exaggerated, and are greatly different from the actual dimensions.

A semiconductor device 10 shown in FIG. It has a mold portion (sealing portion) 17 for sealing.

The interposer 30 is an insulating substrate, and is made of various resin materials such as polyimide, epoxy, cyanate, and bismaleimide triazine (BT resin). The plan view shape of the interposer 30 is generally a quadrangle such as a square or rectangle.

A terminal 41 made of a conductive metal material such as copper is provided in a predetermined shape on the upper surface (one surface) of the interposer 30 .

In addition, a plurality of vias (through holes) (not shown) are formed through the interposer 30 in its thickness direction.

One end (upper end) of each bump 70 is electrically connected to a part of the terminal 41 via each via, and the other end (lower end) protrudes from the lower surface (the other surface) of the interposer 30. there is

A portion of the bump 70 protruding from the interposer 30 has a substantially spherical shape (ball shape).

The bump 70 is mainly made of brazing material such as solder, silver brazing, copper brazing, or phosphorous copper brazing.

A terminal 41 is formed on the interposer 30 . A terminal 21 of the semiconductor chip 20 is electrically connected to the terminal 41 via a connecting portion 81 .

In this embodiment, as shown in FIG. 1, the terminals 21 are configured to protrude from the surface side formed on the semiconductor chip 20, and the terminals 41 are also configured to protrude from the interposer 30. ing.

The gap between the semiconductor chip 20 and the interposer 30 is filled with an underfill material made of various resin materials, and the cured underfill material forms the sealing layer 80. . The sealing layer 80 has the function of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and the function of preventing foreign matter, moisture, etc. from entering the gap.

Furthermore, on the upper side of the interposer 30, the semiconductor chip 20 and the mold part 17 formed so as to cover the interposer 30 are made of a cured semiconductor sealing material (sealing material). , the semiconductor chip 20 is sealed in the semiconductor device 10 to prevent entry of foreign matter, moisture, etc. into the semiconductor chip 20 .

As shown in FIG. 1, the semiconductor chip 20 (semiconductor element) has a semiconductor chip main body 23 (semiconductor element main body) and terminals 21 protruding from the lower surface side of the semiconductor chip main body 23 . there is The semiconductor chip main body 23 has a circuit (not shown) formed on its upper surface side, and is mainly made of a semiconductor material such as Si, SiC, GaN or Ga ₂ O ₃ .

The semiconductor device 10 and the semiconductor chip 20 having such configurations are manufactured as follows, for example, by a semiconductor device manufacturing method using an adhesive tape.

<Method for manufacturing a semiconductor device>
2 and 3 are longitudinal sectional views for explaining a method of manufacturing the semiconductor device shown in FIG. 1 using the adhesive tape of the present invention, and FIG. A] is an enlarged cross-sectional view enlarging the periphery of the needle located in FIG. In the following description, the upper side in FIGS. 2 to 4 is called "upper", and the lower side is called "lower". In addition, in each drawing referred to in this specification, the dimensions in the left-right direction and/or the thickness direction are exaggerated, and are greatly different from the actual dimensions.

[1A] First, an adhesive tape 100 composed of a laminate having a substrate 4 and an adhesive layer 2 laminated on the upper surface of the substrate 4 is prepared, and as shown in FIG. The semiconductor substrate 7 (semiconductor wafer) is placed on the adhesive layer 2 on the portion 122 and lightly pressed to laminate (stick) the semiconductor substrate 7 (sticking step).

On the upper surface of the semiconductor substrate 7, a circuit included in the semiconductor chip 20 (semiconductor chip body portion 23) formed by singulation is formed in advance, and terminals 21 are formed in advance on the lower surface. , the semiconductor substrate 7 is adhered to the adhesive tape 100 with the upper surface of the circuit formed side facing the adhesive layer 2 . For this reason, the adhesive layer 2 is bonded to the upper surface of the semiconductor substrate 7 on which the circuit is formed, that is, the uneven surface on which the unevenness is formed.

[2A] Next, as shown in FIG. 2B, the adhesive tape 100 laminated with the semiconductor substrate 7 is placed on the dicer table 200. Then, as shown in FIG.

[3A] Next, the outer peripheral portion 121 of the adhesive layer 2 is fixed by the wafer ring 9, and then the semiconductor substrate 7 as a substrate is cut (diced) using a dicing saw (blade) (not shown). are singulated to obtain semiconductor chips 20 as components on the adhesive tape 100 (singulation step; see FIG. 2(c)).

At this time, the adhesive tape 100 has a cushioning effect and prevents cracking, chipping, etc. when the semiconductor substrate 7 is cut.

Further, the cutting of the semiconductor substrate 7 using the blade is carried out so as to reach halfway in the thickness direction of the base material 4 as shown in FIG. 2(c). Thereby, the individualization of the semiconductor substrate 7 can be reliably performed.

In this case, for the purpose of preventing dust generated when the semiconductor substrate 7 is cut from scattering, and furthermore, for the purpose of suppressing unnecessary heating of the semiconductor substrate 7, the semiconductor substrate 7 is cut. The semiconductor substrate 7 is cut while supplying water.

[4A] Next, the adhesive tape 100 to which the semiconductor substrate 7 is attached and fixed by the wafer ring 9 is transferred from the dicing device (not shown) to a pick-up device (not shown), and the wafer is While fixed by the ring 9, the central portion 310 is thrust upward against the outer peripheral portion 320 of the table 300 to radially extend the adhesive tape 100, thereby forming the individualized semiconductor substrates 7, that is, the components. A gap having a constant interval is formed between the semiconductor chips 20 (expanding step; see FIG. 2(d)).

[5A] Next, the semiconductor chip 20 is picked up on the stage 400 by suction with a vacuum collet or air tweezers, etc. (pickup step; FIG. 2(e).).

Picking up of this semiconductor chip 20 is carried out after the expanding step in which the adhesive tape 100 is radially extended in the step [4A], as shown in FIG. 4B, from the state housed in the ejector head 410 to the state projected from the ejector head 410, as shown in FIG. 4B. That is, the needle 430 protrudes in the thickness direction. As a result, the semiconductor chip 20 affixed to the adhesive tape 100 is pushed up using the needle 430, thereby being separated from the adhesive tape 100, and then sucked by a vacuum collet or air tweezers. As shown in 4(c), the semiconductor chip 20 is picked up.

In this step [5A], the adhesive tape 100 of the present invention is used. That is, in picking up the semiconductor chip 20 as a component in this step [5A], the adhesive tape 100 is measured in accordance with the piercing strength test specified in JIS Z 1707 on the base material 4 included in the adhesive tape 100. The piercing strength is 4.0 N or more and 8.0 N or less, and the displacement until piercing is 2.0 mm or more and 8.0 mm or less.

Therefore, in this step [5A], when picking up the individualized semiconductor chips 20 in a state of being pushed up by the needles 430, the needles 430 push the semiconductor chips 20 with a sufficient size to pick up the semiconductor chips 20. Even if the semiconductor chip 20 is pushed up, the semiconductor chip 20 can be picked up with excellent precision while accurately preventing the breakage of the base material 4, but the detailed explanation will be given later.

Through the steps [1A] to [5A] as described above, the semiconductor chip 20 is separated (divided) from the semiconductor substrate 7 using the adhesive tape 100. FIG. That is, the semiconductor substrate 7 is fixed on the adhesive layer 2 of the adhesive tape 100, and the semiconductor substrate 7 is cut from the semiconductor substrate 7 to reach halfway in the thickness direction of the base material 4, thereby separating the semiconductor substrate 7 into individual pieces. A plurality of semiconductor chips 20 are formed by separating. After that, after forming a gap at a constant interval between the semiconductor chips 20, the semiconductor chips 20 are pushed up from the side of the base material 4 and pulled out from the opposite side of the base material 4, so that the semiconductor chips 20 are adhered. Separated from layer 2.

[6A] Next, after transferring the picked up semiconductor chip 20 from a vacuum collet or air tweezers to a mounting probe or the like and turning it upside down, as shown in FIG. and the terminals 41 provided on the interposer 30 are opposed to each other via the solder bumps 85 provided on the terminals 41 , and placed on the interposer 30 . That is, the semiconductor chip 20 (semiconductor element) is placed on the interposer 30 (substrate) with the surface of the semiconductor chip 20 on which the terminals 21 are formed facing downward.

[7A] Next, as shown in FIG. 3B, while heating the solder bumps 85 interposed between the terminals 21 and 41, the interposer 30 and the semiconductor chip 20 are brought close to each other.

As a result, the melted solder bumps 85 come into contact with both the terminals 21 and the terminals 41 , and are cooled in this state to form the connecting portions 81 . 41 are electrically connected (mounting step; see FIG. 3(c)).

[8A] Next, the gap formed between the semiconductor chip 20 and the interposer 30 is filled with an underfill material (sealing material) composed of various resin materials. By curing, a sealing layer 80 composed of a cured product of the underfill material is formed (sealing layer forming step; see FIG. 3(d)).

[9A] Next, on the upper side of the interposer 30, the semiconductor chip 20 is molded with the interposer 30 by forming the mold part 17 (sealing part) so as to cover the semiconductor chip 20 and the interposer 30. Bumps 70 are formed so as to protrude from the lower side of the interposer 30, which is sealed with the portion 17 and electrically connected to a part of the terminals 41 through vias provided in the interposer 30 (see FIG. 3). (e).).

Here, for the sealing by the mold part 17, for example, a mold having an internal space corresponding to the shape of the mold part 17 to be formed is prepared, and the semiconductor chip 20 and the interposer 30 are placed in the internal space. The internal space is filled with a powdery semiconductor sealing material so as to cover the . Then, in this state, the semiconductor encapsulating material is heated to be cured to obtain a cured product of the semiconductor encapsulating material.

The semiconductor device 10 is obtained by the semiconductor device manufacturing method including the steps described above. More specifically, after performing the steps [1A] to [9A], the steps [4A] to [9A] are repeatedly performed, thereby collectively forming a plurality of semiconductor devices 10 from one semiconductor substrate 7. can be manufactured.

The adhesive tape 100 of the present invention, which is used in the manufacturing method of the semiconductor device 10, will be described below.

<Adhesive tape 100>
FIG. 5 is a vertical cross-sectional view showing an embodiment of the adhesive tape. In the following description, the upper side in FIG. 5 is called "upper", and the lower side is called "lower".

The adhesive tape 100 is composed of a laminate including a substrate 4 and an adhesive layer 2 containing an adhesive base resin as a main material and laminated on the upper surface (one surface) of the substrate 4, In this embodiment, the semiconductor substrate 7 (substrate) and the semiconductor chip 20 (component) are temporarily fixed and used. 4.0 N or more and 8.0 N or less in piercing strength measured by , and 2.0 mm or more and 8.0 mm or less in displacement until piercing.

Here, in the step [5A], when picking up the separated semiconductor chips 20 in a state in which they are pushed up by the needles 430, the needles 430 push the semiconductor chips 20 with a size sufficient to pick up the semiconductor chips 20. Even if the semiconductor chip 20 is pushed up, it is required that the base material 4 of the adhesive tape 100 is prevented from being broken and the semiconductor chip 20 can be picked up.

With respect to the required properties of the adhesive tape 100 required in this way, the present inventors have studied and found that the substrate 4 included in the adhesive tape 100 conforms to the puncture strength test specified in JIS Z 1707 as described above. The piercing strength measured by 1 is set to 4.0 N or more and 8.0 N or less, and the displacement until piercing is set to 2.0 mm or more and 8.0 mm or less.

The piercing strength of this base material 4 is measured in accordance with the provisions of JIS Z 1707:2019 (general rules for plastic films for food packaging). ±5% RH), a substrate 4 as a test piece is fixed using a jig on a test table having an opening with a diameter of 15 mm in the center, and the substrate 4 has a diameter of 1.0 mm and a tip shape radius A 0.5 mm semi-circular needle is pierced at a speed of 50±5 mm/min, and the maximum stress [N] until the needle penetrates is measured. The displacement until the substrate 4 breaks through is measured as the amount [mm] of protrusion of the tip of the needle from the opening provided in the test table when the needle penetrates.

In the present invention, the piercing strength of the base material 4 and the displacement until the base material 4 is pierced are set within the ranges described above. That is, in the step [5], when picking up the separated semiconductor chip 20 in a state of being pushed up by the needle 430, the size is sufficient to pick up the semiconductor chip 20, and this sufficient amount is sufficient. Even if the semiconductor chip 20 is pushed up by the needle 430 with the force required to increase the amount, it can be said that the occurrence of breakage in the base material 4 is accurately prevented. .

Therefore, the tip of the needle 430 reaches the adhesive layer 2 side of the adhesive tape 100, which causes defects in the semiconductor chip 20 and adhesive deposits that part of the adhesive layer 2 remains on the semiconductor chip 20. It is possible to maintain the state in which the semiconductor chip 20 is pushed up while appropriately suppressing or preventing the occurrence of . Therefore, the semiconductor chip 20 can be picked up with excellent accuracy by suction using a vacuum collet or air tweezers.

The base material 4 and the adhesive layer 2 of the adhesive tape 100 (dicing tape) will be described in detail below.

<Base material 4>
The base material 4 (adhesive tape base material) is mainly made of a resin material, has a sheet shape, and has a function of supporting the adhesive layer 2 provided on the base material 4 . Also, in the expanding step of stretching the pressure-sensitive adhesive tape 100 in the plane direction in the step [4A], it is for realizing the stretching. Furthermore, in the step [5A], in the pick-up step of picking up the separated semiconductor chips 20 in a state of being pushed up by the needles 430, the push-up by the needles 430 is accurately prevented from breaking. It is for realizing. And, in the present invention, as described above, the puncture strength measured in accordance with the puncture strength test specified in JIS Z 1707 is 4.0 N or more and 8.0 N or less, and the displacement until penetration is is 2.0 mm or more and 8.0 mm or less.

Such a resin material is not particularly limited as long as the piercing strength and the displacement until piercing can be set within the above ranges. Examples include polyolefin resin, polyvinyl chloride resin, polystyrene resin, resins, polyester resins such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polybutylene naphthalate, polyester thermoplastic elastomers (ester polymers), polyurethanes, polyimides, polyamides, polyether ether ketones such as Thermoplastic resins such as ether ketone, polyether sulfone, fluororesin, silicone resin, cellulose resin, acrylic resin, polyvinyl isoprene, polycarbonate (carbonate polymer), and mixtures of these thermoplastic resins are used.

In particular, it is preferable to use polyolefin-based resin, polyvinyl chloride-based resin, polystyrene-based resin, or a mixture thereof as the resin material. By using these resin materials, the piercing strength and the displacement until piercing can be relatively easily set within the ranges described above. Therefore, in the pick-up step [5A], when picking up the individualized semiconductor chips 20 in a state of being pushed up by the needles 430, the semiconductor chips 20 are picked up by the needles 430 in a size sufficient to pick up the semiconductor chips 20. Even if the tip 20 is pushed up, the substrate 4 can be prevented from being broken. In addition, in the expanding step [4A], the elongation (expandability) can be reliably imparted to the base material 4, and during the dicing in the step [3A], the cutting debris of the base material 4 causes adhesion Contamination of the tape 100 can be appropriately suppressed or prevented.

Examples of such polyolefin-based resins include, but are not limited to, polyethylene-based resins such as polypropylene, linear low-density polyethylene, low-density polyethylene, and ultra-low-density polyethylene, ethylene-vinyl acetate copolymer (EVA), and ethylene. - polyethylene copolymers such as methyl methacrylate copolymers (EMMA), ethylene-methacrylate copolymers (EMAA) and ionomers such as ethylenic ionomers as zinc ion cross-links, sodium ion cross-links or potassium ion cross-links. Among them, one or a combination of two or more thereof can be used, but among them, polypropylene and polyethylene copolymers are preferable. By using these polyolefin-based resins, the puncture strength and the displacement until piercing can be easily set within the ranges described above.

Polyvinyl chloride resin is a polymer having a plurality of groups represented by —CH ₂ —CHCl— as repeating units. Examples thereof include copolymers with vinyl-based monomers (polymerizable monomers), and also include post-chlorinated vinyl chloride polymers, which can be used alone or in combination of two or more. , a homopolymer is generally used.

Copolymers of vinyl chloride and copolymerizable vinyl-based monomers include, for example, vinyl chloride-vinyl acetate copolymers, vinyl chloride-ethylene copolymers, vinyl chloride-acrylic copolymers, and the like. mentioned.

Furthermore, the polystyrene resin is not particularly limited, but examples include polystyrene, poly(α-methylstyrene), polychlorostyrene, poly(m-propylstyrene), high impact polystyrene (HIPS), acrylonitrile-butadiene-styrene. Copolymer (ABS), acrylonitrile-styrene copolymer (AS), styrene-methacrylic acid copolymer, styrene-methacrylic acid/alkyl ester copolymer, styrene-methacrylic acid/glycidyl ester copolymer, Styrene-acrylic acid copolymer, styrene-acrylic acid/alkyl ester copolymer, styrene-maleic acid copolymer, styrene-fumaric acid copolymer, styrene-butadiene copolymer, styrene-isoprene copolymer and the like, and these may be used singly or in combination of two or more. Of these, styrene thermoplastic elastomers are preferred. By using a styrenic thermoplastic elastomer, the puncture strength and the displacement until piercing can be more easily set within the ranges described above.

Moreover, the base material 4 preferably contains a conductive material having conductivity. By containing such a conductive material, the conductive material functions as an antistatic agent, and the semiconductor chip 20 in the singulation step [3A] and the pick-up step [5A] generation of static electricity can be accurately suppressed or prevented.

Thus, when the substrate 4 contains a conductive material, the surface resistivity of the surface of the substrate 4 opposite to the adhesive layer 2 is set to 1.0×10 ¹³ (Ω/□) or less. preferably 1.0×10 ¹¹ (Ω/□) or less. This makes it possible to more accurately suppress or prevent the generation of static electricity in the semiconductor chip 20 in the singulation step [3A] and the pick-up step [5A].

The conductive material is not particularly limited as long as it has conductivity, and examples thereof include surfactants, permanent antistatic polymers (IDP), metal materials, metal oxide materials and carbon-based materials. One or more of these can be used in combination.

Examples of surfactants among these include anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants.

As the permanent antistatic polymer (IDP), for example, all IDPs such as polyether and polyolefin block polymer series, polyesteramide series, polyesteramide, polyetheresteramide, and polyurethane series can be used.

The metal material includes gold, silver, copper or silver-coated copper, nickel, etc., and these metal powders are preferably used.

Examples of metal oxide materials include indium tin oxide (ITO), indium oxide (IO), antimony tin oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO ₂ ), zinc oxide (ZnO), and the like. , these metal oxide powders are preferably used.

Furthermore, carbon-based materials include carbon black, carbon nanotubes such as single-walled carbon nanotubes and multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, graphene, and the like.

Among these, the conductive material is preferably at least one of surfactants, permanent antistatic polymers (IDP), metal oxide materials and carbon black. Since these materials have small temperature dependence of resistivity, even if the base material 4 is heated during dicing of the semiconductor substrate 7 in the step [3A], the surface resistivity of the material does not change. The amount of change can be reduced.

In addition, in the case of preventing the generation of static electricity in the semiconductor chip 20 without containing a conductive material in the base material 4, an antistatic layer containing a conductive material is formed on the surface opposite to the adhesive layer 2. may be formed. This makes it possible to obtain the same effect as when the base material 4 contains a conductive material.

Further, the base material 4 may contain softening agents such as mineral oil, fillers such as calcium carbonate, silica, talc, mica, and clay, antioxidants, light stabilizers, lubricants, dispersants, neutralizers, colorants, and the like. may contain.

Further, when the base material 4 contains a constituent material other than the resin material as the main material, the content of the resin material in the base material 4 is preferably 50% by weight or more and 95% by weight or less, and 65% by weight or more. It is more preferably 90% by weight or less. By setting the content of the resin material within the above range, it is possible to relatively easily set the piercing strength and the displacement until piercing within the above range, and contain constituent materials other than the resin material. It is possible to reliably exhibit the effect obtained by making it.

The base material 4 having such a configuration has a piercing strength of 4.0 N or more and 8.0 N or less measured in accordance with the piercing strength test specified in JIS Z 1707, and a displacement until it is pierced. The piercing strength is preferably 4.3 N or more and 8.0 N or less, more preferably 4.5 N or more and 7.8 N or less. It is more preferable to have By setting the magnitude of the piercing strength within the above range, in the step [5A], when picking up the singulated semiconductor chip 20 in a state of being pushed up by the needle 430, the base material 4 can be prevented more accurately, and the semiconductor chip 20 pushed up by the needle 430 can be more accurately picked up.

Further, the displacement until breaking through is preferably 2.5 mm or more and 7.5 mm or less, and more preferably 5.0 mm or more and 7.0 mm or less. By setting the magnitude of the displacement until the breakthrough is within the range, the base material is It is possible to prevent breakage at 4 more accurately.

Further, the thickness of the base material 4 is, for example, preferably 70 μm or more and 150 μm or less, and more preferably 80 μm or more and 120 μm or less. When the thickness of the base material 4 is within this range, the function of the base material 4 can be exhibited more reliably, and the dicing of the semiconductor substrate 7 in the step [3A] can be performed with excellent workability. can. Further, in the step [5A], when picking up the individualized semiconductor chips 20 in a state of being pushed up by the needles 430, it is possible to more accurately prevent the substrate 4 from being broken. Therefore, in the step [5A], the individualized semiconductor chips 20 pushed up by the needles 430 can be picked up with higher accuracy.

Furthermore, the substrate 4 has, on the surface opposite to the adhesive layer 2, an average length Sm of the roughness curve element, which is a parameter representing surface roughness defined in JIS B 0601 (2013), for example, It is preferably 30 μm or more and 100 μm or less, more preferably 40 μm or more and 70 μm or less. When the average length Sm of the roughness curve element of the base material 4 is within this range, the expansion of the adhesive tape 100 during the step [4A] performed prior to the pickup of the semiconductor chip 20 in the step [5A] is reduced. At this time, the contact between the adhesive tape 100 and the table 300 of the pick-up device becomes smoother, so that the distance between the semiconductor chips 20 is widened, and the gap having a constant distance is ensured between the semiconductor chips 20. can be formed into Therefore, when the semiconductor chips 20 are picked up in step [5A], contact between adjacent chips can be accurately suppressed or prevented, and tape tension is applied to the adhesive tape 100 in the circumferential direction of the adhesive tape 100. As a result, tension along the circumferential direction is generated in the entire base material 4, so that the pickup performance of the semiconductor chip 20 is improved.

The substrate 4 may have functional groups such as carboxyl groups, hydroxyl groups, and amino groups that are reactive with constituent materials contained in the adhesive layer 2 exposed on the surface thereof.

Moreover, the base material 4 may be composed of a laminate (multilayer body) in which a plurality of layers composed of different resin materials are laminated.

<Adhesive layer 2>
The adhesive layer 2 is obtained by adhering and supporting the semiconductor substrate 7 when the semiconductor substrate 7 is diced in the step [3A], and by dividing the semiconductor substrate 7 into individual pieces in the step [5A]. It has adhesiveness that allows it to pick up the semiconductor chip 20 .

In this embodiment, such an adhesive layer 2 is composed of a resin composition containing a base resin (1) having adhesiveness as a main material, and the addition of a curable resin for curing the adhesive layer 2 is omitted. Even if energy is applied to the adhesive layer 2, its adhesive strength does not decrease. After being held under the conditions of ° C. for 1 hour, the peel strength measured when holding one end of the adhesive tape 100 in an environment of 23 ° C. and peeling it off at a speed of 1000 mm / min in the direction of 30 ° is , preferably 100 cN/20 mm or more and 600 cN/20 mm or less, more preferably 200 cN/20 mm or more and 450 cN/20 mm or less. By setting the peeling strength within the above range, the adhesive tape 100 is configured to have an adhesive layer 2 whose adhesive force to the semiconductor substrate 7 and the semiconductor chip 20 does not decrease when energy is applied. Even if the application of energy to the adhesive layer 2 provided in is omitted, the semiconductor chip 20 can be reliably picked up in the step [5A].

Each component contained in this resin composition will be described in detail below.
(1) Base Resin The base resin is contained in the resin composition in order to have adhesiveness and impart adhesiveness to the semiconductor substrate 7 to the adhesive layer 2 .

Such base resins include acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), and polyvinyl ether resins (adhesives). , styrene-based elastomer resins (adhesives), polyisoprene-based resins (adhesives), polyisobutylene-based resins (adhesives), and urethane-based resins (adhesives). However, among them, it is preferable to use an acrylic resin. By using an acrylic resin as the base resin, the peeling strength of the adhesive tape 100 can be relatively easily set within the range of 100 cN/20 mm or more and 600 cN/20 mm or less. In addition, acrylic resins are excellent in heat resistance and can be obtained relatively easily and at low cost, and therefore are preferably used as base resins from this point of view as well.

The acrylic resin refers to a resin having a polymer (homopolymer or copolymer) containing (meth)acrylic ester as a main monomer component as a base polymer.

The (meth)acrylic acid ester is not particularly limited, but examples include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, and butyl (meth)acrylate. , isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, (meth)acrylate Octyl acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, (meth) ) undecyl acrylate, dodecyl (meth) acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, (meth) (meth)acrylic acid alkyl esters such as octadecyl acrylate, (meth)acrylic acid cycloalkyl esters such as cyclohexyl (meth)acrylate, (meth)acrylic acid aryl esters such as phenyl (meth)acrylate, etc. One or more of these can be used in combination. Among these, (meth)acrylic acid alkyl esters such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, octyl (meth)acrylate is preferably (Meth)acrylic acid alkyl esters, in particular, are excellent in heat resistance, and can be obtained relatively easily and inexpensively. In addition, by using 2-ethylhexyl acrylate (2-ethylhexyl acrylate) as the base resin, the peeling strength of the adhesive tape 100 can be relatively easily set within the range of 100 cN/20 mm or more and 600 cN/20 mm or less. can be set.

In this specification, (meth)acrylic acid ester is used in the sense of including both acrylic acid ester and methacrylic acid ester.

For the purpose of improving cohesive strength, heat resistance, and the like, acrylic resins may be used as needed that contain a copolymerizable monomer as a monomer component that constitutes the polymer.

Examples of such copolymerizable monomers include, but are not limited to, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, (meth) hydroxyl group-containing monomers such as 6-hydroxyhexyl acrylate, epoxy group-containing monomers such as glycidyl (meth)acrylate, (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, isocrotonic acid carboxyl group-containing monomers, maleic anhydride, acid anhydride group-containing monomers such as itaconic anhydride, (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N-butyl (meth)acrylamide, N-methylol ( Amide monomers such as meth)acrylamide, N-methylolpropane (meth)acrylamide, N-methoxymethyl (meth)acrylamide, N-butoxymethyl (meth)acrylamide, aminoethyl (meth)acrylate, (meth)acrylic acid N,N-dimethylaminoethyl, amino group-containing monomers such as t-butylaminoethyl (meth)acrylate, cyano group-containing monomers such as (meth)acrylonitrile, ethylene, propylene, isoprene, butadiene, isobutylene Olefin monomers, styrene monomers such as styrene, α-methylstyrene and vinyl toluene, vinyl ester monomers such as vinyl acetate and vinyl propionate, vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether, vinyl chloride and chloride Halogen atom-containing monomers such as vinylidene, alkoxy group-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine , N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N-(meth) Examples thereof include monomers having a nitrogen atom-containing ring such as acryloylmorpholine, and the like, and these can be used singly or in combination of two or more.

The content of these copolymerizable monomers is preferably 40% by weight or less, more preferably 10% by weight or less, relative to all monomer components constituting the acrylic resin.

Further, the copolymerizable monomer may be contained at the end of the main chain in the polymer constituting the acrylic resin, or contained in the main chain, furthermore, the end of the main chain and the main chain It may be included in both the medium and the medium.

Furthermore, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of cross-linking between polymers.

Examples of polyfunctional monomers include 1,6-hexanediol (meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and neopentyl glycol di(meth)acrylate. , pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, glycerin di(meth)acrylate, epoxy (meth)acrylate, polyester ( Meth)acrylate, urethane (meth)acrylate, divinylbenzene, butyl di(meth)acrylate, hexyl di(meth)acrylate and the like can be mentioned, and one or more of these can be used in combination.

Ethylene-vinyl acetate copolymers, vinyl acetate polymers and the like can also be used as copolymerizable monomer components.

Such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. Moreover, polymerization of these monomer components can be carried out using a polymerization method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, a suspension polymerization method, or the like.

The acrylic resin should have a low content of low-molecular-weight substances from the viewpoint of preventing contamination of the semiconductor substrates 7 and the like with the acrylic resin when the semiconductor substrates 7 are diced in the step [3A]. is preferred. In this case, the weight average molecular weight of the acrylic resin is preferably set to 300,000 or more and 5,000,000 or less, more preferably set to 400,000 or more to 4,000,000 or less, and further preferably set to 500,000 or more to 1,500,000 or less. be. If the weight-average molecular weight of the acrylic resin is less than 300,000 depending on the type of the monomer component, etc., the contamination prevention property for the semiconductor substrate 7 and the like is lowered, and as a result, when the semiconductor chip 20 is removed, Adhesive residue may occur.

The acrylic resin (base resin) used preferably has a glass transition point of -70°C or higher and -50°C or lower, more preferably -65°C or higher and -55°C or lower. By using an acrylic resin having a glass transition point within this range as the base resin, the magnitude of the peeling strength of the adhesive tape 100 can be more easily set within the range of 100 cN/20 mm or more and 600 cN/20 mm or less. can do.

(2) Cross-linking agent Further, the resin composition forming the adhesive layer 2 may contain a cross-linking agent. By containing the cross-linking agent, the pressure-sensitive adhesive layer 2 can be adjusted to have appropriate hardness. Moreover, the magnitude of the peeling strength of the adhesive tape 100 can be more easily set within the range of 100 cN/20 mm or more and 600 cN/20 mm or less.

The cross-linking agent is not particularly limited. Examples include metal chelate-based cross-linking agents, acid anhydride-based cross-linking agents, polyamine-based cross-linking agents, and carboxyl group-containing polymer-based cross-linking agents. Among these, epoxy-based cross-linking agents are preferred.

Examples of epoxy-based cross-linking agents include, but are not limited to, N,N,N',N'-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis(N,N-glycidylaminomethyl). Cyclohexane, 1,6-hexanediol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, adipate diglycidyl ester, o-phthalic acid Diglycidyl ester, triglycidyl-tris(2-hydroxyethyl) isocyanurate, and other epoxy resins having two or more epoxy groups in the molecule.

The cross-linking agent is preferably blended in an amount of 0.01 to 30 parts by weight, more preferably 0.1 to 20 parts by weight with respect to 100 parts by weight of the base resin. By adjusting the blending amount of the cross-linking agent as described above, the cross-linking agent can reliably exhibit the function exhibited by adding the cross-linking agent to the resin composition.

(3) Plasticizer The plasticizer improves the flexibility of the adhesive layer 2 in which the addition of a curable resin is omitted and the adhesive strength does not decrease due to the application of energy. It is preferably contained in the adhesive layer 2, ie, the resin composition, since it can be more easily set within the range of 100 cN/20 mm or more and 600 cN/20 mm or less.

Examples of the plasticizer include, but are not limited to, phthalate plasticizers such as DOP (dioctyl phthalate), DBP (dibutyl phthalate), DIBP (diisobutyl phthalate), DHP (diheptyl phthalate), DOA (di -2-ethylhexyl adipate), DIDA (diisodecyl adipate), DOS (di-2-ethylhexyl sebacate) and other aliphatic dibasic acid ester plasticizers, aromatic carboxylic acid esters such as ethylene glycol benzoates Plasticizers, trimellitic acid ester plasticizers such as TOTM (trioctyl trimellitate), adipate plasticizers, etc., may be used alone or in combination of two or more thereof. can.

The content of the plasticizer in the adhesive layer 2, i.e., the resin composition, is not particularly limited, but for example, it is preferably blended at 0.1 parts by weight or more and 5.0 parts by weight or less with respect to 100 parts by weight of the base resin. , 0.5 parts by weight or more and 3.0 parts by weight or less. Thereby, the flexibility of the adhesion layer 2 can be improved reliably. Therefore, the magnitude of the peeling strength can be more easily set within the range of 100 cN/20 mm or more and 600 cN/20 mm or less.

(4) Other components Furthermore, the resin composition constituting the adhesive layer 2 contains, in addition to the components (1) to (3) described above, other components such as a conductive material, a tackifier, and an antiaging agent. , adhesion modifiers, fillers, colorants, flame retardants, softeners, antioxidants, surfactants, and the like.

Among these, the conductive material is not particularly limited as long as it has conductivity, and the same materials as those described as the conductive material contained in the base material 4 can be used.

By containing such a conductive material, the conductive material functions as an antistatic agent, and the semiconductor chip 20 in the singulation step [3A] and the pick-up step [5A] generation of static electricity is accurately suppressed or prevented.

When one of the substrate 4 and the adhesive layer 2 contains a conductive material, the substrate 4 preferably contains the conductive material. As a result, the generation of static electricity in the semiconductor chip 20 can be more accurately suppressed or prevented without reliably adhering the conductive material to the semiconductor chip 20 .

Among these, the tackifier is not particularly limited, but for example, rosin resin, terpene resin, coumarone resin, phenol resin, aliphatic petroleum resin, aromatic petroleum resin, aliphatic aromatic copolymer petroleum Resins and the like can be mentioned, and one or more of these can be used in combination.

As described above, by appropriately selecting the types and contents of the components (1) to (4) containing the component (1) (base resin) as an essential component contained in the adhesive layer 2, 30 ° It is preferable that the magnitude of the peel strength measured when peeled off at a speed of 1000 mm / min in the direction is set within the range of 100 cN / 20 mm or more and 600 cN / 20 mm or less, but It is more preferably 450 cN/20 mm or more, and even more preferably 250 cN/20 mm or more and 350 cN/20 mm or less. Thereby, in the step [3A], when the semiconductor substrate 7 is cut (diced) in the thickness direction to separate the semiconductor substrate 7, the semiconductor substrate 7 is more stably fixed on the adhesive tape 100. In this state, cutting in the thickness direction of the semiconductor substrate 7 can be performed. Further, in the step [5A], when picking up the semiconductor chips 20 that have been separated into pieces, the adhesive tape 100 forms the adhesive layer 2 whose adhesive strength to the semiconductor substrate 7 and the semiconductor chips 20 does not decrease by applying energy. Even if the provision of energy to the adhesive layer 2 included in the adhesive tape 100 is omitted, the semiconductor chip 20 can be picked up by more stably peeling the adhesive tape 100 from the individualized semiconductor chip 20. be able to.

Although the thickness of the adhesive layer 2 is not particularly limited, it is preferably 5 μm or more and 50 μm or less, and more preferably 5 μm or more and 10 μm or less. By setting the thickness of the adhesive layer 2 within such a range, the adhesive layer 2 exhibits good adhesive strength to the semiconductor substrate 7 in the singulation step [3A], and the pick-up step [5A]. , the adhesive layer 2 and the semiconductor substrate 7 can be provided with adhesiveness to the extent that good releasability is exhibited.

The adhesive layer 2 may be composed of a laminate (multilayer body) in which a plurality of layers composed of different resin compositions are laminated.

Furthermore, in the adhesive tape 100 having a configuration in which the adhesive layer 2 is laminated on the base material 4, when the adhesive tape 100 is viewed from above, the adhesive layer 2 is formed at the interface between the base material 4 and the adhesive layer 2. The number of bubbles having an area of 100 μm ² or more is preferably 15.0 cells/mm ² or less, more preferably 0.01 cells/mm ² or more and 7.0 cells/mm ² or less, More preferably, it is 0.1 pieces/mm ² or more and 2.0 pieces/mm ² or less. By controlling the number of bubbles formed at the interface between the base material 4 and the adhesive layer 2 and setting the number of bubbles having an area of 100 μm ² or more as described above, in the step [5A], the semiconductor chip When picking up the semiconductor chip 20 and peeling off the adhesive tape 100 from the semiconductor chip 20 , it is possible to more accurately suppress or prevent the adhesive residue from being left on the semiconductor chip 20 .

Next, the pressure-sensitive adhesive tape 100 having such a configuration can be manufactured, for example, as follows.

<Method for manufacturing adhesive tape>
FIG. 6 is a longitudinal sectional view for explaining a method of manufacturing the adhesive tape shown in FIG. 5. FIG. In the following description, the upper side in FIG. 6 is called "upper", and the lower side is called "lower".

[1B] First, the substrate 4 is prepared (see FIG. 6(a)).
The method for manufacturing the substrate 4 is not particularly limited, but examples thereof include general molding methods such as calendaring, inflation extrusion, T-die extrusion, and wet casting. In addition, when the base material 4 is composed of a laminate, as a method for manufacturing the base material 4 having such a configuration, for example, a molding method such as a co-extrusion method or a dry lamination method is used.

Moreover, the base material 4 can be used without being stretched, and if necessary, it may be used after being uniaxially or biaxially stretched.

The average length Sm of the roughness curve element on the surface of the base material 4 opposite to the side on which the adhesive layer 2 is formed is, for example, when the base material 4 is molded using an extruder. By using rolls with different surface roughness as the rolls provided in the , the size can be changed to a desired size.

[2B] Next, the adhesive layer 2 is formed on the upper surface of the substrate 4 (see FIG. 6(b)).
The surface (upper surface) of the substrate 4 was subjected to corona treatment, chromic acid treatment, matte treatment, ozone exposure treatment, flame exposure treatment, and high voltage shock treatment for the purpose of improving the adhesion between the substrate 4 and the adhesive layer 2. Surface treatments such as exposure treatment, ionizing radiation treatment, primer treatment, and anchor coating treatment may be applied.

In addition, the adhesive layer 2 is formed by coating or spraying a varnish-like liquid material obtained by dissolving a resin composition, which is a constituent material of the adhesive layer 2, on the base material 4, and then volatilizing the solvent. Obtainable.

Examples of the solvent include, but are not particularly limited to, methyl ethyl ketone, acetone, toluene, ethyl acetate, dimethylformaldehyde, etc. One or more of these may be used in combination.

Also, the application or spraying of the liquid material onto the base material 4 can be performed using methods such as die coating, curtain die coating, gravure coating, comma coating, bar coating and lip coating.

[3B] Next, with respect to the adhesive layer 2 formed on the base material 4, the base material 4 is left in the thickness direction of the adhesive layer 2 so that the center side and the outer peripheral side are separated. By removing a part of the adhesive layer 2 in an annular shape, the adhesive layer 2 is provided with a central portion 122 and an outer peripheral portion 121 (see FIG. 6(c)).

As a method for removing a part of the adhesive layer 2 in an annular shape, for example, there is a method of punching so as to surround the area to be removed, and then removing the adhesive layer 2 located in this punched area.

Also, the punching of the region to be removed can be performed by using, for example, a method using a roll-shaped mold or a method using a press mold. Among them, a method using a roll-shaped mold capable of continuously manufacturing the adhesive tape 100 is preferable.

In this step, part of the adhesive layer 2 is punched out in a ring shape (circular shape) to form the center part 122 and the outer peripheral part 121. In the manufacturing method of (1), any shape may be used as long as the outer peripheral portion 121 of the adhesive layer 2 can be fixed by the wafer ring 9 . Specifically, examples of the shape to be punched include, in addition to the circular shape described above, an elliptical shape, an oval shape such as a bale shape, and a polygonal shape such as a square shape and a pentagonal shape.

[4B] Next, by laminating the separator 1 on the adhesive layer 2 formed on the base material 4, an adhesive tape 100 in which the adhesive layer 2 is coated with the separator 1 is obtained (Fig. 6(d) reference.).

The method for laminating the separator 1 on the adhesive layer 2 is not particularly limited, but for example, a lamination method using a roll or a lamination method using a press can be used. Among these, the lamination method using rolls is preferable from the viewpoint of productivity that enables continuous production.

The separator 1 is not particularly limited, but examples thereof include a polypropylene film, a polyethylene film, a polyethylene terephthalate film, and the like.

Moreover, since the separator 1 is peeled off when the adhesive tape 100 is used, the separator 1 whose surface has been subjected to a release treatment may be used. Examples of the mold release treatment include a treatment of coating the surface of the separator 1 with a mold release agent, a treatment of making the surface of the separator 1 finely uneven, and the like. Examples of release agents include silicone-based, alkyd-based, fluorine-based, and the like.

The pressure-sensitive adhesive tape 100 coated with the separator 1 can be formed through the steps described above.

The adhesive tape 100 coated with the separator 1 manufactured in this embodiment is used after the adhesive tape 100 is peeled off from the separator 1 in the above-described method for manufacturing a semiconductor device using the adhesive tape 100.

When peeling off the separator 1 from the adhesive layer 2 covered by the separator 1, it is preferable to peel the separator 1 at an angle of 90° or more and 180° or less with respect to the surface of the adhesive layer 2. By setting the angle at which the separator 1 is peeled off within the range described above, the peeling at areas other than the interface between the adhesive layer 2 and the separator 1 can be reliably prevented.

Although the adhesive tape and adhesive tape substrate of the present invention have been described above, the present invention is not limited thereto.

For example, each layer of the pressure-sensitive adhesive tape of the present invention may be added with an optional component that can exhibit the same function, or the base material is a single layer as described in the above embodiment. In addition to the structure, it may be composed of a plurality of layers, and for example, an antistatic layer may be provided on the surface of the base material opposite to the adhesive layer.

Furthermore, the adhesive layer contains a curable resin that cures the adhesive layer 2 in the resin composition constituting the adhesive layer, so that the adhesive strength is reduced by applying energy to the adhesive layer. good too.

In addition, the structure of each layer of the adhesive tape can be replaced with any one capable of exhibiting the same function, or any structure can be added.

Furthermore, depending on the configuration of the semiconductor device formed using the adhesive tape, the formation of the mold portion 17 included in the semiconductor device 10 may be omitted.

In addition, by cutting (dicing) the semiconductor substrate to which the adhesive tape is attached in the thickness direction, it is not limited to the case where the semiconductor chip is obtained as a cut piece, that is, a part, and the substrate is temporarily fixed on the adhesive tape. The adhesive tape of the present invention can also be applied to various substrate processing applications in which it is necessary to separate the parts from the adhesive tape after obtaining the parts by cutting in the thickness direction. Substrates to which the adhesive tape of the present invention is attached include, in addition to the semiconductor substrates (semiconductor wafers) described above, glass substrates such as soda lime glass, borosilicate glass, quartz glass, alumina, silicon nitride, and titanium oxide. and the like, resin material substrates such as acryl, polycarbonate, and rubber, metal material substrates, and the like.

Next, specific examples of the present invention will be described.
It should be noted that the present invention is not limited to the description of these examples.

1. Preparation of Raw Materials First, the raw materials used for manufacturing the adhesive tapes of each example and each comparative example are shown below.

(Polyolefin resin 1)
As the polyolefin resin 1, polypropylene (homo PP, manufactured by Sumitomo Chemical Co., Ltd., "FS2011DG-2", MFR2.0) was prepared.

(Polyolefin resin 2)
Polypropylene (random PP, manufactured by Sumitomo Chemical Co., Ltd., “FL6632G”, MFR 7.0) was prepared as the polyolefin resin 2 .

(Polyolefin resin 3)
As the polyolefin resin 3, an ethylene-methyl methacrylate copolymer (EMAA, Mitsui Dow Polychemicals, "N0903HC", MFR 3.0) was prepared.

(Polyolefin resin 4)
As the polyolefin resin 4, low-density polyethylene (LDPE, manufactured by Sumitomo Chemical Co., Ltd., "Sumikasen L705", MFR 7.0) was prepared.

(Polyvinyl chloride resin 1)
As polyvinyl chloride resin 1, polyvinyl chloride (PVC, average degree of polymerization: 1000) was prepared.

(Polystyrene resin 1)
As the polystyrene-based resin 1, high-impact polystyrene (HIPS, manufactured by PS Japan, "H9152") was prepared.

(Polystyrene resin 2)
As the polystyrene resin 2, a hydrogenated styrene thermoplastic elastomer (SEBS, manufactured by Asahi Kasei Chemicals, "H1062", styrene content: 18% by weight) was prepared.

(Antistatic agent 1)
As the antistatic agent 1, a polyether-based antistatic agent (manufactured by Sanyo Chemical Industries, Ltd., "Pelectron PVL") was prepared.

(Base resin 1)
As the base resin 1, an acrylic copolymer produced by mixing four kinds of acrylic acid, 2-hydroxyethyl acrylate, 2-ethylhexyl acrylate, and butyl methacrylate and solution-polymerizing them in a toluene solvent by a conventional method. prepared.

The glass transition point and weight average molecular weight of the base resin (acrylic copolymer) 1 were −37° C. and weight average molecular weight of 600,000, respectively.

(Crosslinking agent 1)
As the cross-linking agent 1, polyisocyanate (manufactured by Tosoh Corporation, product number: Coronate L) was prepared.

(Plasticizer 1)
As the plasticizer 1, a polyester plasticizer (manufactured by DIC, product number: W-230H) was prepared.
(Plasticizer 2)
As a plasticizer 2, dioctyl phthalate (DOP, manufactured by Tokyo Chemical Industry Co., Ltd.) was prepared.

(stabilizer 1)
As stabilizer 1, a barium-zinc stabilizer (manufactured by Nitto Kasei Kogyo Co., Ltd., product number: PSL-55) was prepared.

2. Preparation of adhesive tape [Example 1]
A resin composition containing polyolefin resin 2 (60.0% by weight) and polystyrene resin 2 (40.0% by weight) was extruded by an extruder to prepare a substrate 4 having a thickness of 100 μm.

In addition, using an ultra-depth shape measuring microscope (manufactured by Keyence Corporation, "VK9700"), the average length Sm of the roughness curve elements on the surface of the base material 4 opposite to the surface on which the adhesive layer 2 is formed was measured. . Sm was measured according to JIS B 0601 (2013). As a result, the average length Sm of the roughness curve elements was 60.0 μm.

Next, a liquid material containing a resin composition containing base resin 1 (100.0 parts by weight), cross-linking agent 1 (1.0 parts by weight) and plasticizer 1 (1.0 parts by weight) was prepared. . This liquid material is bar-coated on the base material 4 so that the thickness of the adhesive layer 2 after drying is 20 μm, and then dried at 80° C. for 1 minute. ) to obtain an adhesive tape 100 of Example 1 by forming an adhesive layer 2 having a thickness of 10.0 μm.

[Examples 2-6, Comparative Examples 1-2]
As each constituent material contained in the resin composition used for forming the base material 4 and each constituent material contained in the resin composition used for forming the adhesive layer 2, those shown in Table 1 are used, and further , The content of each constituent material was changed as shown in Table 1 to form the base material 4 and the adhesive layer 2 having the thickness shown in Table 1, and when molding the base material 4, the extruder Using rolls with different surface roughness as the rolls provided, except for changing the average length Sm of the roughness curve element on the surface opposite to the side of the base material 4 on which the adhesive layer 2 is formed. Adhesive tapes of Examples 2 to 6 and Comparative Examples 1 and 2 were produced in the same manner as in Example 1.

The base material 4 used in Example 5 was produced as follows. That is, polyvinyl chloride resin 1 (73.0% by weight), stabilizer 1 (3.6% by weight), and plasticizer 2 (23.4% by weight) are sufficiently dry blended, and then pressurized. The mixture was melt-kneaded using a kneader under such conditions that the resin temperature was 140° C., and then extruded to prepare pellets. A substrate 4 having a thickness of 80 μm was produced from the pellets by calender molding.

3. Evaluation The obtained adhesive tapes of Examples and Comparative Examples were evaluated by the following methods.

3-1. Base material pierce strength test The base material 4 included in the adhesive tape 100 of each example and each comparative example was subjected to a precision universal testing machine (manufactured by Shimadzu Corporation, "Autograph AGS-X") and a piercing test jig. Using a tool (manufactured by Imada, "TKS-20N"), in accordance with the provisions of JIS Z 1707: 2019 (general rules for plastic films for food packaging), the penetration strength of the base material 4 and the penetration of the base material 4 was measured. That is, in an atmosphere of temperature (23±2° C.) and relative humidity (50±5% RH), a substrate 4 as a test piece was fixed using a jig on a test table having an opening with a diameter of 15 mm in the center. , a semicircular needle with a diameter of 1.0 mm and a tip shape radius of 0.5 mm is pierced into this base material 4 at a speed of 50±5 mm/min, and the maximum stress until the needle penetrates the base material 4 is It was measured as strength [N]. Also, when the needle penetrated, the amount of protrusion of the tip of the needle from the opening provided in the test table was measured as the displacement [mm] until the substrate 4 was broken through.

3-2. Measurement of Peeling Strength from Silicon Wafer Each adhesive tape having a width of 20 mm of each example and each comparative example was attached to the surface of a silicon wafer whose surface was polished to #2000, and then 23° C. for 1 hour. After being held under the conditions of JIS G 3469, in an environment of 23 ° C., hold one end of the adhesive tape and peel it off at a speed of 1000 mm / min in a direction of 30 °. The peel strength A (peel strength A) was measured using a peel analyzer ("VPA-H100" manufactured by Kyowa Interface Science Co., Ltd.).

3-3. Evaluation of pick-up property and adhesive residue property of silicon chip <1> A silicon wafer (manufactured by SUMCO) made of silicon was prepared and shaved by a conventional method to obtain this silicon wafer with a thickness of 230 μm. The adhesive tape 100 of each example and each comparative example was fixed to the ground surface after grinding with a #2000 wheel to 200 μm with the adhesive layer 2 on the silicon wafer side. After that, the silicon wafer was cut in the thickness direction until it reached the middle of the base material 4 to obtain a plurality of silicon chips each having a size of 6 mm long and 6 mm wide.

<2> Next, the silicon chip was pushed up using a needle with a tip diameter of 100 μm, with a needle push-up amount of 400 [μm] and a push-up speed of 20 mm/sec.

<3> Next, the silicon chip was picked up by suction with a vacuum collet while the silicon chip was being pushed up by the needle.

By going through the steps <1> to <3> as described above, 50 silicon chips were repeatedly picked up by suction for each adhesive tape of each example and each comparative example.

Then, regarding the adhesive tapes of each example and each comparative example, the success or failure of picking up the silicon chip by adsorption of the silicon chip (pickup property) and the presence or absence of adhesive residue on the back surface of the picked up silicon chip were observed. and evaluated according to the following criteria.

(Evaluation of pick-up property)
◎: 50 silicon chips could be picked up ○: 48 or more but less than 50 silicon chips
I was able to pick up △: For 40 or more and less than 48 silicon chips,
Could be picked up ×: For less than 40 silicon chips,
could pick up

(Adhesive residue evaluation)
Of the 50 silicon chips picked up, ◎: About 50 silicon chips,
No adhesive residue was observed on the back surface of the silicon chip.
No adhesive residue was observed on the back surface of the silicon chip.
No adhesive residue was observed on the back surface of the silicon chip ×: For less than 45 silicon chips,
No adhesive residue was observed on the back surface of the silicon chip.

As shown in Table 1, in the adhesive tape 100 of each example, the puncture strength at the substrate 4 measured in accordance with the puncture strength test specified in JIS Z 1707 is 4.0 N or more. 0 N or less, and the displacement of the substrate 4 until it breaks through is 2.0 mm or more and 8.0 mm or less. The result showed that the silicon chip could be picked up with excellent accuracy.

On the other hand, in the pressure-sensitive adhesive tapes of the respective comparative examples, the piercing strength at the substrate 4 was 4.0 N or more and 8.0 N or less, and the displacement until the substrate 4 was pierced was 2.0 mm or more. 0 mm or less is not satisfied, and as a result, the silicon chip cannot be picked up with excellent accuracy, or even if it can be picked up, adhesive residue is left on the back surface of the picked up silicon chip. became.

REFERENCE SIGNS LIST 1 separator 2 adhesive layer 4 base material 7 semiconductor substrate 9 wafer ring 10 semiconductor device 17 mold section 20 semiconductor chip 21 terminal 23 semiconductor chip body section 30 interposer 41 terminal 70 bump 80 sealing layer 81 connection section 85 solder bump 100 adhesive tape 121 outer peripheral portion 122 central portion 200 dicer table 300 table 310 central portion 320 outer peripheral portion 400 stage 410 ejector head 430 needle

Claims (9)

A base material and an adhesive layer containing a base resin having adhesiveness as a main material and laminated on one surface of the base material are provided to temporarily fix at least one of a substrate and components , and then, An adhesive tape used to pick up the temporarily fixed at least one kind ,
The adhesive layer was formed by attaching an adhesive tape with a width of 20 mm to the surface of a silicon wafer whose surface was polished by #2000, and then holding it at 23 ° C. for 1 hour. Holding one end of the adhesive tape and peeling it off at a speed of 1000 mm / min in a direction of 30 °, the peel strength measured is 100 cN / 20 mm or more and 600 cN / 20 mm or less,
The base material has a piercing strength of 4.0 N or more and 8.0 N or less measured according to the piercing strength test specified in JIS Z 1707, and a displacement until it is pierced is 2.0 mm or more. An adhesive tape having a thickness of 8.0 mm or less. 2. The pressure-sensitive adhesive tape according to claim 1, wherein the base material contains at least one of polyolefin-based resin, polyvinyl chloride-based resin and polystyrene-based resin. 3. The pressure-sensitive adhesive tape according to claim 2, wherein said polyolefin resin is at least one of polypropylene and polyethylene copolymer. 4. The adhesive tape according to any one of claims 1 to 3, wherein the adhesive layer does not lose its adhesive strength to the components laminated on the adhesive layer when energy is applied. The pressure-sensitive adhesive tape according to any one of claims 1 to 4, wherein the base material has a thickness of 70 µm or more and 150 µm or less. The adhesive tape is cut from the substrate to reach halfway in the thickness direction of the base material in a state where the substrate is fixed on the adhesive layer, and the substrate is separated into a plurality of pieces. After that, while stretching the adhesive tape in the surface direction, the part is pushed up from the base material side and pulled out from the opposite side of the base material, thereby separating from the adhesive layer. 6. The adhesive tape according to any one of claims 1 to 5, which is used when applying pressure. The substrate has an average length Sm of roughness curve elements, which is a parameter representing surface roughness defined in JIS B 0601 (2013), on the surface opposite to the adhesive layer, and is 30 μm or more and 100 μm or less. The adhesive tape according to any one of claims 1-6. 8. The adhesive tape according to any one of claims 1 to 7, wherein the adhesive tape is used to temporarily fix at least the component out of the substrate and the component, and then pick up the component. A base material for an adhesive tape,
On one side of the adhesive tape base material, an adhesive layer containing a base resin having adhesiveness as a main material is laminated, and at least one of the substrate and the component is temporarily fixed to the adhesive layer. , then used to pick up the temporarily fixed at least one ,
The adhesive layer was formed by attaching an adhesive tape with a width of 20 mm to the surface of a silicon wafer whose surface was polished by #2000, and then holding it at 23 ° C. for 1 hour. Holding one end of the adhesive tape and peeling it off at a speed of 1000 mm / min in a direction of 30 °, the peel strength measured is 100 cN / 20 mm or more and 600 cN / 20 mm or less,
The base material for the adhesive tape has a puncture strength of 4.0 N or more and 8.0 N or less measured in accordance with the puncture strength test specified in JIS Z 1707, and a displacement of 2 until it penetrates. A substrate for an adhesive tape, characterized by having a thickness of 0.0 mm or more and 8.0 mm or less.

Images