TW202110297A - Substrate structure and manufacturing method thereof - Google Patents

Abstract

A substrate structure includes a glass substrate, a first circuit layer, a second circuit layer, and at least one conductive region. The glass substrate has a first surface and a second surface opposing the first surface. The first circuit layer is disposed on the first surface. The second circuit layer is disposed on the second surface. The conductive region includes a plurality of conductive micro vias. The conductive micro vias penetrate through the glass substrate. The conductive micro vias are electrically connected to the first circuit layer and the second circuit layer, and the conductive micro vias have a via size of 2 μm to 10 μm.

Description

Substrate structure and manufacturing method thereof

The invention relates to a substrate structure and a manufacturing method thereof, and more particularly to a substrate structure with conductive micro-vias and a manufacturing method thereof.

Since the glass substrate has a highly flat surface, it is suitable for the production of a redistribution layer (RDL) of extremely thin circuits. However, the through-glass via (TGV) in the glass substrate has the following process difficulties: (1) TGV is expensive to manufacture, requires two processes of laser and etching, and uses highly hazardous special chemicals. (2) Very fine lines often need to be matched with a TGV with a higher aspect ratio (AR). However, in the surface metal patterning process of a glass substrate with a high aspect ratio, in order to ensure that the conduction quality of the copper metal in the TGV conforms to the substrate The required measures (such as roughening and surface polarity modification) are not conducive to the production of very fine lines on the surface of the glass substrate.

The present invention provides a substrate structure and a manufacturing method thereof, using a plurality of conductive micro-vias to replace conventional conductive vias, which can shorten the conventional glass vias manufacturing process, increase productivity, reduce production costs, and improve the mechanical properties of the substrate , Facilitate the advantages of the subsequent production of ultra-fine line re-laying layer.

The substrate structure of the present invention includes a glass substrate, a first circuit layer, a second circuit layer and at least one conductive area. The glass substrate has a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The second circuit layer is configured on the second surface. The conductive area includes a plurality of conductive micro-vias. The conductive micro-via penetrates the glass substrate. The conductive micro-via electrically connects the first circuit layer and the second circuit layer, and the diameter of the conductive micro-via is 2 μm to 10 μm.

In an embodiment of the present invention, the ratio of the total surface area of the aforementioned conductive micro-vias to the surface area of the conductive region is 10% to 80%.

In an embodiment of the present invention, the minimum distance between the aforementioned conductive micro-vias is equal to the diameter of the conductive micro-vias.

In an embodiment of the present invention, the aspect ratio of the aforementioned conductive micro-via is greater than 100.

In an embodiment of the present invention, the diameter of the aforementioned conductive region is 45 μm to 100 μm.

In an embodiment of the present invention, the thickness of the aforementioned glass substrate is 0.3 mm to 1.1 mm.

The manufacturing method of the substrate structure of the present invention includes the following steps. Provide glass substrate. The glass substrate has a first surface and a second surface opposite to the first surface. At least one conductive area is formed. The conductive area includes a plurality of conductive micro-vias. The conductive micro-via penetrates the glass substrate, and the diameter of the conductive micro-via is 2 μm to 10 μm. A first circuit layer is formed on the first surface. A second circuit layer is formed on the second surface. The conductive micro-via electrically connects the first circuit layer and the second circuit layer.

In an embodiment of the present invention, the step of forming a plurality of conductive micro-vias in at least one conductive area includes the following steps. A plurality of micro-vias are formed in the conductive area. The micro-via penetrates the glass substrate, and the aperture of the micro-via is 2 μm to 10 μm. Fill the conductive material in the micro-via.

In an embodiment of the present invention, the above-mentioned method for forming micro-vias is laser drilling, and does not require an etching process.

In an embodiment of the present invention, the minimum distance between the above-mentioned micro-vias is equal to the diameter of the micro-vias.

In an embodiment of the present invention, the aspect ratio of the above-mentioned micro vias is greater than 100.

Based on the above, in the substrate structure and the manufacturing method thereof provided by the present invention, a plurality of conductive micro-vias can be used to replace the conventional conductive vias. Among them, since the aperture of the conductive micro-via (2μm to 10μm) is much smaller than that of the conductive via, and the laser drilling method can be used to directly form the micro-via without the need for an additional etching process, therefore, the conventional method can be shortened. The advantages of the glass through-hole manufacturing process, increase production capacity, reduce production costs, improve the mechanical properties of the substrate, and facilitate the production of the subsequent ultra-fine circuit redistribution layer.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

[Example 1]

1A to 1C are schematic cross-sectional views of a method for manufacturing a substrate structure according to Embodiment 1 of the present invention. Fig. 2 is a schematic top view of Fig. 1A.

1A and 2 at the same time, a glass substrate 110 is provided first. The glass substrate 110 has a first surface 111 and a second surface 112 opposite to the first surface 111. The thickness of the glass substrate 110 is, for example, 0.3 mm to 1.1 mm. Next, for example, a laser drilling method is used to form a plurality of micro-vias 130, 130a at predetermined positions 120, 120a of the conductive area of the glass substrate 110. The micro through holes 130 and 130a penetrate the glass substrate 110 and communicate with the first surface 111 and the second surface 112 of the glass substrate 110. Wherein, the pore diameter of the micro through holes 130 and 130a is, for example, 2 μm to 10 μm. The aspect ratio of the micro vias 130 and 130a is, for example, greater than 100. For example, when the thickness of the glass substrate 110 is 0.3mm, the diameter of the largest microvia 130, 130a that can be matched is 3μm; and when the thickness of the glass substrate 110 is 1.1mm, the largest microvia that can be matched The pore diameter of the holes 130 and 130a is 10 μm.

Specifically, the shape of the predetermined positions 120 and 120a of the conductive area on the first surface 111 (or the second surface 112) is, for example, a circle or an ellipse, but it is not limited thereto. The diameter of the predetermined positions 120 and 120a of the conductive area on the first surface 111 (or the second surface 112) is, for example, 45 μm to 100 μm. In addition, the micro-vias 130 and 130a in the predetermined positions 120 and 120a of the conductive area are arranged in the predetermined positions 120 and 120a of the conductive area, for example, in an array arrangement. Therefore, the spacing between the micro-vias 130 and 130a is equal, but not limited to this. That is to say, in other embodiments, the spacing between the micro-vias 130, 130a can also be different, as long as the spacing is greater than or equal to the aperture of the micro-vias 130, 130a, which can stabilize the micro-vias 130, 130a. The structure is fine. Furthermore, in some embodiments, the minimum distance between the micro-vias 130 (or 130a) may be equal to the diameter of the micro-vias 130 (or 130a). That is, the minimum distance from the edge of one micro-via 130 (or 130a) to the edge of the adjacent micro-via 130 (or 130a) may be equal to the diameter of the micro-via 130 (or 130a). For example, when the aperture of the plurality of micro-vias 130 in the predetermined position 120 of the conductive region is 5 μm, the minimum distance from the edge of one micro-via 130 to the edge of the adjacent micro-via 130 is 5μm.

Next, referring to FIG. 1B, a conductive material is filled in the micro-vias 130, 130a to form conductive micro-vias 131, 131a and conductive regions 121, 121a. The conductive material can be formed by a plating process such as chemical plating. The conductive material may be a metal or a metal alloy, such as copper, titanium, tungsten, aluminum, etc., or a combination thereof. Therefore, in this embodiment, a plurality of conductive micro-vias 131, 131a are provided in the conductive regions 121, 121a, the conductive micro-vias 131, 131a penetrate the glass substrate 110, and the conductive micro-vias 131, 131a have a diameter of 2 μm. To 10μm.

Specifically, the diameter of the conductive regions 121 and 121a on the first surface 111 (or the second surface 112) is, for example, 45 μm to 100 μm. The minimum distance between the conductive micro-vias 131 (or 131a) is equal to the diameter of the conductive micro-vias 131 (or 131a). Therefore, the minimum distance from the edge of one conductive micro-via 131 (or 131a) to the edge of the adjacent conductive micro-via 131 (or 131a) is equal to 2 μm to 10 μm. In addition, the ratio of the total surface area of all the conductive micro-vias 131 (or 131a) in each conductive region 121 (or 121a) to the surface area of the conductive region 121 (or 121a) on the first surface 111 or the second surface 112 is 10 % To 80%, in order to have better conductivity.

Then, referring to FIG. 1C, for example, a first circuit layer 140 is formed on the first surface 111 of the glass substrate 110, and a second circuit layer 150 is formed on the second surface 112 of the glass substrate 110 by electroplating, for example. Wherein, the conductive micro vias 131 and 131a are electrically connected to the first circuit layer 140 and the second circuit layer 150. In this embodiment, the first circuit layer 140 directly contacts the glass substrate 110, and the second circuit layer 150 directly contacts the glass substrate 110. In some embodiments, the first circuit layer 140 includes a plurality of pads 141, 142, and the second circuit layer 150 includes a plurality of pads 151, 152, wherein the pad 141 is arranged corresponding to the pad 151, and the pad 141 It is electrically connected to the pad 151 through the conductive micro-via 131. The pad 142 is disposed corresponding to the pad 152, and the pad 142 is electrically connected to the pad 152 through the conductive micro-via 131a. At this time, the substrate structure 100 of Example 1 has been manufactured.

In short, the substrate structure 100 of this embodiment includes a glass substrate 110, a first circuit layer 140, a second circuit layer 150, and at least one conductive region 121, 121a. The glass substrate 110 has a first surface 111 and a second surface 112 opposite to the first surface 111. The first circuit layer 140 is disposed on the first surface 111. The second circuit layer 150 is disposed on the second surface 112. The conductive regions 121, 121a include a plurality of conductive micro-vias 131, 131a. The conductive micro vias 131 and 131 a penetrate the glass substrate 110 and electrically connect the first circuit layer 140 and the second circuit layer 150. The pore diameters of the conductive micro-vias 131 and 131a are 2 μm to 10 μm. In addition, because the aperture of the micro via 130 (or 130a) is small, it can be directly formed by laser drilling and does not require an additional etching process. Therefore, the glass via process can be shortened, thereby increasing productivity, reducing production costs, Improve the mechanical properties of the substrate and facilitate the production of the subsequent ultra-fine circuit redistribution layer.

[Comparative Example 1]

3A to 3C are schematic cross-sectional diagrams of the manufacturing method of the substrate structure of Comparative Example 1. FIG. Fig. 4 is a schematic top view of Fig. 3B.

Please refer to FIG. 3A to FIG. 3B, which are the steps of manufacturing a through-glass via (TGV) in the prior art. First, the predetermined positions 220, 220a of the through-glass holes in the glass substrate 210 are modified by laser, and then the glass substrate 210 in the predetermined positions 220, 220a of the through-glass holes is removed by an etching process to form the through-glass holes. Holes 230, 230a. Among them, the etching process uses, for example, hydrofluoric acid or other suitable glass etching solutions to remove the modified glass. Here, the diameters of the predetermined positions 220 and 220a of the through-glass holes on the surface of the glass substrate 210 are equal to the diameters of the through-glass holes 230 and 230a, and are, for example, 45 μm to 100 μm.

Next, referring to FIG. 3C, for example, by electroplating, a first circuit layer 240 and a second circuit layer 250 are formed on the surfaces of both sides of the glass substrate 210, and conductive holes are formed on the walls of the glass vias 230 and 230a. Layer to form conductive vias 231, 231a. The hole diameter of the conductive vias 231 and 231a is 45 μm to 100 μm. At this time, the substrate structure 200 of Comparative Example 1 has been manufactured.

[Comparison of Example 1 and Comparative Example 1]

Please refer to FIGS. 1A to 1C, FIGS. 2, 3A to 3C, and FIG. 4 at the same time. First, it can be known that the conductive regions 121 and 121a of Example 1 have the same size as the through glass holes 230 and 230a of Comparative Example 1. For example, the diameters of the predetermined positions 120 and 120a of the conductive regions on the first surface 111 (or the second surface 112) of Example 1 and the apertures of the glass through holes 230 and 230a of Comparative Example 1 are both 45 μm to 100 μm. The glass substrate 110 of Example 1 has a first circuit layer 140 and a second circuit layer 150 on both sides, and the glass substrate 210 of Comparative Example 1 also has a first circuit layer 240 and a second circuit layer 250 on both sides.

However, the main difference between Example 1 and Comparative Example 1 is that compared with Comparative Example 1, a single conductive via 231 (or conductive via 231a) is used to electrically connect the first circuit layer 240 and the second circuit layer 250. 1 is to provide a plurality of conductive micro-vias 131 (or conductive micro-vias 131a) in the conductive region 121 (or conductive region 121a) of the same size as the conductive via 231 (or conductive via 231a) of Comparative Example 1. It replaces the single conductive via 231 (or conductive via 231a) of Comparative Example 1, and is used to electrically connect the first circuit layer 140 and the second circuit layer 150. That is to say, in a unit area, Example 1 uses a plurality of conductive micro-vias 131 (or conductive micro-vias 131a) to replace the single conductive via 231 (or conductive vias 231a) of Comparative Example 1 to electrically connect the A circuit layer 140 and a second circuit layer 150. Among them, the conductive micro vias 131 and 131a of Example 1 have a diameter of 2 μm to 10 μm, but the conductive vias 231 and 231a of Comparative Example 1 have a diameter of 45 μm to 100 μm.

In addition, since the apertures of the conductive micro-vias 131, 131a of Example 1 are much smaller than the apertures of the conductive vias 231, 231a of Comparative Example 1, they must be formed by laser modification and etching processes compared to Comparative Example 1. The glass vias 230, 230a, in the first embodiment, only a laser drilling method is used without an additional etching process, and a plurality of micro vias 130, 130a can be directly produced. In other words, when the aperture of the glass through hole to be formed is greater than 10 μm, in practice, the conventional technology will use the laser modification and etching process to form it. Furthermore, since Embodiment 1 replaces a single glass via 230, 230a with a plurality of micro vias 130, 130a, the embodiment 1 has the advantages of shortening the glass via process, increasing productivity, and reducing production costs. advantage.

Next, compared to the method of forming the conductive vias 231, 231a in Comparative Example 1, in Example 1, a chemical wet process, such as electroless plating, can be used to perform a metallization process on the micro vias 130, 130a to form conductive micro vias. 131, 131a. In addition, the chemical wet process is not limited by the high aspect ratio of the micro vias 130, 130a, and it can ensure that the metal is conducted in the micro vias 130, 130a. In addition, the micro-vias 130 and 130a of Embodiment 1 will not affect the subsequent fabrication of the ultra-fine line redistribution layer (RDL) on the surface of the glass substrate 110, which can greatly reduce the difficulty of the electroplating process.

It is worth noting that because the substrate structure of this embodiment uses conductive micro-vias formed on the glass substrate, the glass substrate has better mechanical properties, and furthermore, the substrate structure of this embodiment has better flatness and It is suitable for the production of ultra-fine line redistribution layer (RDL), and can even be used as part of the 5G antenna design.

In summary, in the substrate structure and manufacturing method provided by the present invention, a plurality of conductive micro-vias can be used to replace the conventional conductive vias. Among them, since the aperture of the conductive micro-via (2μm to 10μm) is much smaller than that of the conductive via, and the laser drilling method can be used to directly form the micro-via without the need for an additional etching process, therefore, the conventional method can be shortened. The advantages of the glass through-hole manufacturing process, increase production capacity, reduce production costs, improve the mechanical properties of the substrate, and facilitate the production of the subsequent ultra-fine circuit redistribution layer.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

100, 200: substrate structure 110, 210: glass substrate 111: first surface 112: second surface 120, 120a: predetermined position of conductive area 121, 121a: conductive area 130, 130a: micro-via 131, 131a: Conductive micro vias 140, 240: first circuit layer 141, 142: pads 150, 250: second circuit layer 151, 152: pads 220, 220a: predetermined position of glass through hole 230, 230a: glass through hole 231, 231a: conductive vias

1A to 1C are schematic cross-sectional views of a method for manufacturing a substrate structure according to Embodiment 1 of the present invention. Fig. 2 is a schematic top view of Fig. 1A. 3A to 3C are schematic cross-sectional diagrams of the manufacturing method of the substrate structure of Comparative Example 1. FIG. Fig. 4 is a schematic top view of Fig. 3B.

100: substrate structure

110: glass substrate

111: first surface

112: second surface

131, 131a: Conductive micro vias

140: first circuit layer

141, 142: pads

150: second circuit layer

151, 152: pads

Claims (11)

A substrate structure, including: A glass substrate having a first surface and a second surface opposite to the first surface; A first circuit layer disposed on the first surface; A second circuit layer disposed on the second surface; and At least one conductive area includes a plurality of conductive micro-vias, wherein the conductive micro-vias penetrate through the glass substrate, the conductive micro-vias are electrically connected to the first circuit layer and the second circuit layer, and the conductive micro-vias The pore diameter of the micro-via is 2 μm to 10 μm. In the substrate structure described in the first item of the scope of the patent application, the ratio of the total surface area of the conductive micro-vias to the surface area of the conductive region is 10% to 80%. According to the substrate structure described in item 1 of the scope of patent application, the smallest distance between the conductive micro-vias is equal to the diameter of the conductive micro-vias. In the substrate structure described in item 1 of the scope of the patent application, the aspect ratio of the conductive micro-vias is greater than 100. In the substrate structure described in the first item of the scope of patent application, the diameter of the conductive region is 45 μm to 100 μm. According to the substrate structure described in item 1 of the scope of patent application, the thickness of the glass substrate is 0.3 mm to 1.1 mm. A method for manufacturing a substrate structure includes: Providing a glass substrate having a first surface and a second surface opposite to the first surface; Forming at least one conductive area, including a plurality of conductive micro-vias, wherein the conductive micro-vias penetrate the glass substrate, and the conductive micro-vias have a diameter of 2 μm to 10 μm; Forming a first circuit layer on the first surface; and A second circuit layer is formed on the second surface, wherein the conductive micro-vias are electrically connected to the first circuit layer and the second circuit layer. According to the manufacturing method of the substrate structure described in item 7 of the scope of patent application, the step of forming a plurality of conductive micro-vias in at least one conductive area includes: Forming a plurality of micro-vias in the conductive area, wherein the micro-vias penetrate the glass substrate, and the apertures of the micro-vias are 2 μm to 10 μm; and Fill the conductive material in the micro through holes. According to the manufacturing method of the substrate structure described in item 8 of the scope of the patent application, the method for forming the micro-vias is laser drilling and does not require an etching process. According to the manufacturing method of the substrate structure described in item 7 of the scope of patent application, the minimum distance between the micro-vias is equal to the aperture of the micro-vias. According to the manufacturing method of the substrate structure described in item 7 of the scope of patent application, the aspect ratio of the micro vias is greater than 100.

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