TWI557819B - Interposer and manufacturing method thereof - Google Patents

Description

Intermediary board and manufacturing method thereof

The present invention relates to an interposer and a method of manufacturing the same.

The flip chip bonding technique is a chip packaging technique that is often applied to the bonding between a wafer and a package carrier. In particular, the active face of the wafer can be connected to the top surface of the package carrier via a plurality of solder bumps. Then, the bottom surface of the package carrier can be connected to the printed wiring board (PCB) via the conductive balls.

However, the junction density of the wafer increases at a faster rate than the junction density of the package carrier, which causes a drop in the junction density of the wafer and the junction density of the package carrier. In order to buffer such a gap, the interposer has developed. The interposer is a signal transmission medium disposed between the wafer and the package carrier or circuit board. For the interposer, the fabrication of vias and thin lines is challenging.

The material of the interposer structure may be organic polymer, germanium, glass or ceramic. In order to further improve the various characteristics of the interposer structure, the related fields are not intensively developed. How can we provide an intermediary with better characteristics? The plate structure is one of the most important research and development topics at present, and it has become an urgent target for improvement in related fields.

The invention provides a method for manufacturing an interposer, which solves the problem that a dielectric layer is easily left in the neck of the via hole when the via hole is formed by using the second laser ablation process.

According to an embodiment of the present invention, a method of manufacturing an interposer includes the following steps. First, a first blind via is formed on the first surface of the dielectric layer, and a first conductive seed layer is formed in the first blind via. Next, a second blind via is formed on the second side of the dielectric layer opposite to the first side, wherein the first blind via is opposite the second blind via and the second blind via exposes the first conductive seed layer. Then, a second conductive seed layer is formed in the second blind via and in contact with the first conductive seed layer. Finally, the first conductor layer and the second conductor layer are respectively formed to fill the first blind hole and the second blind hole to form a conductor pillar in the dielectric layer.

According to another embodiment of the present invention, a method of manufacturing an interposer includes the following steps. First, a first blind via is formed on the first side of the dielectric layer to form a first conductive seed layer in the first blind via. Next, a first conductor layer is formed to fill the first blind via. Next, a second blind via is formed on the second side of the interface layer opposite to the first side, wherein the first blind via is opposite the second blind via, and the second blind via exposes the first conductive seed layer. Then, a second conductive seed layer is formed in the second blind via and in contact with the first conductive seed layer. Finally, a second conductor layer is formed to fill the second blind via to form a conductor pillar in the dielectric layer.

According to still another embodiment of the present invention, a manufacturer of an interposer The method contains the following steps. First, a substrate is provided, the substrate comprising a support substrate and a dielectric layer disposed on the support substrate. Forming a first blind via on the first side of the dielectric layer, and forming a first conductive seed layer in the first blind via. Next, the dielectric layer and the support substrate are separated, and the dielectric layer is placed on the support substrate. Then, a second blind hole is formed on the second surface of the interface layer opposite to the first surface, wherein the first blind hole is opposite to the second blind hole, and the second blind hole exposes the first conductive seed layer. Next, a second conductive seed layer is formed in the second blind via and contacts the first conductive seed layer. Finally, the support substrate is removed, a first conductor layer is formed to fill the first blind via, and a second conductor layer is formed to fill the second blind via to form a conductor pillar in the dielectric layer.

According to still another embodiment of the present invention, a method of manufacturing an interposer includes the following steps. First, a substrate is provided, the substrate comprising a support substrate and a dielectric layer disposed on the support substrate. Forming a first blind via on the first side of the dielectric layer, and forming a first conductive seed layer in the first blind via, and forming a first conductive layer to fill the first blind via. Next, the dielectric layer and the support substrate are separated, and the dielectric layer is placed on the support substrate. Then, a second blind hole is formed on the second surface of the interface layer opposite to the first surface, wherein the first blind hole is opposite to the second blind hole, and the second blind hole exposes the first conductive seed layer. Next, a second conductive seed layer is formed in the second blind via and in contact with the first conductive seed layer. Finally, a second conductor layer is formed to fill the second blind via to form a conductor pillar in the dielectric layer.

In one or more embodiments of the present invention, the thickness of the first conductive seed layer at the bottom of the first blind via is greater than the thickness of other portions of the first conductive crystal seed layer.

In one or more embodiments of the present invention, the first blind via and the second blind via are formed by laser ablation or by exposure and development, and then chemically etched, wherein the exposed light source can be Laser source.

In one or more embodiments of the present invention, the dielectric layer is made of glass.

According to still another embodiment of the present invention, an interposer includes a dielectric layer, a first conductor layer, a second conductor layer, and a conductive seed layer. The dielectric layer has via holes. The first conductor layer is disposed in the upper half of the via hole. The second conductor layer is disposed in the lower half of the via hole. The conductive seed layer is disposed between the dielectric layer, the first conductor layer, and the second conductor layer.

In one or more embodiments of the present invention, the thickness of the conductive seed layer between the first conductor layer and the second conductor layer is greater than the thickness of other portions of the conductive seed layer.

The above embodiment of the present invention forms a first conductive seed layer in the first blind via, and then uses a laser ablation dielectric layer to form a second blind via opposite the first blind via because the first conductive The seed layer can be used as a barrier layer for the laser ablation process, so there is no need to worry that the laser may penetrate the dielectric layer, so the laser intensity can be adjusted, and the via holes formed by the first blind hole and the second blind hole are also There is no problem with the dielectric layer remaining on its neck.

100‧‧‧Substrate

110‧‧‧Support substrate

120, 140‧‧‧ dielectric layer

121, 141‧‧‧ first side

122, 142‧‧‧ second side

123, 143, 126, 146‧‧ ‧ blind holes

124, 144, 127, 147‧ ‧ outside

125, 145, 128, 148‧ ‧ inner end

129‧‧‧through holes

151, 153, 155, 157, 159‧‧‧ conductive seed layer

161, 163, 165, 167‧‧‧ conductor layers

200, 202‧‧‧ conductor column

D1, D2‧‧‧ inner end aperture

300‧‧‧Intermediary board

1A to 1J are cross-sectional views showing respective steps of a process of an interposer according to an embodiment of the present invention.

1J' is a cross-sectional view showing an interposer according to another embodiment of the present invention.

2A to 2E are cross-sectional views showing respective steps of a process of an interposer according to still another embodiment of the present invention.

The embodiments of the present invention are disclosed in the following drawings, and the details of However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.

In order to meet the requirements of high integration and miniaturization of semiconductor components, the pitch of the interposer structure is also smaller and smaller, but this may cause difficulties in the process of the interposer structure. . Different embodiments of the present invention provide a method of fabricating an interposer structure to solve related problems.

1A to 1J are cross-sectional views showing respective steps of a process of an interposer according to an embodiment of the present invention.

As shown in FIG. 1A, a substrate 100 is first provided, wherein the substrate 100 includes a support substrate 110 and dielectric layers 120, 140 disposed on both sides of the support substrate 110.

Specifically, the material of the dielectric layers 120 and 140 is glass. It should be understood that the materials of the dielectric layers 120 and 140 mentioned above are merely examples, not To limit the present invention, those having ordinary knowledge in the technical field of the present invention should flexibly select the materials of the dielectric layers 120 and 140 according to actual needs.

As shown in FIG. 1B, blind vias 123, 143 are formed on the first side 121 of the dielectric layer 120 and the first side 141 of the dielectric layer 140, respectively. The blind holes 123, 143 have two ends, namely an outer end 124, 144 and an inner end 125, 145.

Specifically, the method of forming the blind vias 123, 143 is laser ablation. In addition, the aperture sizes of the blind holes 123, 143 are reduced by the outer ends 124, 144 toward the inner ends 125, 145.

As shown in FIG. 1C, the conductive seed layers 151 and 153 are formed on the first surface 121 of the dielectric layer 120 and the first surface 141 of the dielectric layer 140, that is, the conductive seed layer 151 is formed respectively. 153 is in the blind holes 123, 143.

Specifically, the material of the conductive seed layers 151, 153 may be a metal such as copper or titanium. The method of forming the conductive seed layers 151, 153 may be a plating such as electroless plating or chemical vapor deposition (CVD), physical vapor deposition (PVD) such as sputtering or evaporation.

As shown in FIG. 1D and FIG. 1E , the dielectric layers 120 and 140 and the support substrate 110 are separated, and the dielectric layers 120 and 140 are respectively flipped by 180° and then disposed on both sides of the support substrate 110 .

As shown in FIG. 1F, blind holes 126, 146 are formed in the second faces 122, 142 of the dielectric layer 120 with respect to the first faces 121, 141, respectively. The blind via 126 is opposite the blind via 123, and the blind via 126 exposes the conductive seed layer 151. The blind via 146 is opposite the blind via 143 and the blind via 146 exposes the conductive seed layer 153. The blind holes 126, 146 have respective ends, namely outer ends 127, 147 and inner ends 128, 148.

Specifically, the blind holes 126, 146 are formed by laser ablation, so the aperture sizes of the blind holes 126, 146 are reduced by the outer ends 127, 147 toward the inner ends 128, 148.

As shown in FIG. 1G, the conductive seed layers 155, 157 are formed on the second surface 122 of the dielectric layer 120 and the second surface 142 of the dielectric layer 140, that is, the conductive seed layer 155 is formed, respectively. 157 is in the blind holes 126, 146. The conductive seed layer 155 at the inner end 128 of the blind via 126 contacts the conductive seed layer 151 at the inner end 125 of the blind via 123, and the conductive seed layer 157 at the inner end 148 of the blind via 146 contacts the blind via 143. Conductive seed layer 153 of inner end 145.

Specifically, the material of the conductive seed layers 155, 157 may be a metal such as copper or titanium. The method of forming the conductive seed layers 155, 157 may be a plating such as electroless plating or chemical vapor deposition (CVD), physical vapor deposition (PVD) such as sputtering or evaporation.

As shown in FIG. 1H, the dielectric layers 120, 140 and the support substrate 110 are separated, and the support substrate 110 is removed.

As shown in FIG. 1I, the dielectric layer 120 is taken as an example, followed by forming the conductor layer 163 on the conductive seed layer 155, and forming the conductor layer 161 under the conductive seed layer 151, that is, forming the conductor layer 161, respectively. 163 fills the blind holes 123, 126. (Only the dielectric layer 120 and its associated processes are described herein, and the associated process of the dielectric layer 140 is similar to that described below).

Specifically, the material of the conductor layers 161 and 163 may be a metal such as copper. The method of forming the conductor layers 161, 163 may be electroplating.

As shown in FIGS. 1I and 1J, the conductive seed layers 151, 155 and the conductor layers 161, 163 outside the blind vias 123, 126 are removed. Thus, the conductor post 200 composed of the conductive seed layers 151, 155 and the conductor layers 161, 163 is formed in the dielectric layer 120, and only the exposed portions of the conductor posts 200 on both sides of the dielectric layer 120 are conductors.

When fabricating the interposer structure, the via holes may be formed by ablation of the sides of the dielectric layer by using lasers. In order to prevent the laser from penetrating the dielectric layer and thereby damaging the support substrate, the intensity of the laser must be controlled. It should not be too strong, but this may cause the dielectric layer located at the neck of the via hole to be ablated, thus affecting the fabrication and conduction quality of the conductor post. Therefore, as shown in FIG. 1C, after the blind vias 123 and 143 are formed, the conductive seed layers 151 and 153 are formed in the blind vias 123 and 143, and as shown in FIG. 1F, the laser is used. The dielectric layers 120, 140 are etched to form the blind vias 126, 146. Since the conductive seed layers 151, 153 can serve as a barrier layer, there is no fear that the laser may penetrate the dielectric layers 120, 140, so the laser intensity can be adjusted. The via holes (i.e., the combination of the blind vias 123, 126 and the blind vias 143, 146) will not have the dielectric layers 120, 140 remaining in the neck.

As shown in FIG. 1C, the thickness of the conductive seed layers 151, 153 at the bottom of the blind vias 123, 143 may be greater than the thickness of other portions of the conductive seed layers 151, 153. As such, as shown in FIG. 1F, when the blind holes 126, 146 are formed by laser ablation of the dielectric layers 120, 140, the conductive seed layers 151, 153 at the bottom of the blind vias 123, 143 may be The laser is effectively blocked, thereby preventing the laser from penetrating through the dielectric layers 120, 140.

1J' is a cross-sectional view of the interposer 300 in accordance with another embodiment of the present invention. As shown in FIG. 1J', the blind hole 123 has an inner end aperture D1, and the blind hole 126 has an inner end aperture D2, and the inner end aperture D1 is larger than the inner end aperture D2. Since the blind holes 126 may not be completely aligned with the blind holes 123 when the lasers are respectively ablated on both sides of the dielectric layer 120, in order to avoid that the blind holes 126 are not aligned with the blind holes 123, the fabrication and conduction of the conductor posts 200 are affected. The inner end aperture D1 of the blind hole 123 is slightly larger than the inner end aperture D2 of the blind hole 126. Therefore, even if the arrangement positions of the blind holes 123, 126 are slightly inaccurate, the fabrication and conduction quality of the conductor post 200 are not affected.

2A to 2E are cross-sectional views showing respective steps of a process of an interposer according to still another embodiment of the present invention. This embodiment is similar to the foregoing embodiment, and the differences are mainly described below.

As shown in FIG. 2A, the substrate 100 as shown in FIG. 1C is first provided, then the conductor layer 161 is formed on the conductive seed layer 151, and the conductor layer 165 is formed under the conductive seed layer 153, that is, The conductor layers 161 and 165 are formed to fill the blind holes 123 and 143, respectively.

Specifically, the material of the conductor layers 161 and 165 may be a metal such as copper. The method of forming the conductor layers 161, 165 may be electroplating.

As shown in FIG. 2B and FIG. 2C, the dielectric layers 120, 140 and the support substrate 110 are separated, and the dielectric layer 120 and the conductor layer 161 and the dielectric layer 140 and the conductor layer 165 are respectively flipped by 180°, and then set. On both sides of the support substrate 110.

As shown in FIG. 2D, blind holes 126, 146 are formed in the second faces 122, 142 of the dielectric layer 120 with respect to the first faces 121, 141, respectively. Blind hole 126 is opposite to the blind via 123, and the blind via 126 exposes the conductive seed layer 151. The blind via 146 is opposite the blind via 143 and the blind via 146 exposes the conductive seed layer 153. The blind holes 126, 146 have respective ends, namely outer ends 127, 147 and inner ends 128, 148.

As shown in FIG. 2E, conductive seed layers 155, 157 are formed on the second surface 122 of the dielectric layer 120 and the second surface 142 of the dielectric layer 140, that is, the conductive seed layer 155 is formed, 157 is in the blind holes 126, 146. The conductive seed layer 155 at the inner end 128 of the blind via 126 contacts the conductive seed layer 151 at the inner end 125 of the blind via 123, and the conductive seed layer 157 at the inner end 148 of the blind via 146 contacts the blind via 143. Conductive seed layer 153 of inner end 145.

Next, a conductor layer 163 is formed on the conductive seed layer 155, and a conductor layer 167 is formed on the conductive seed layer 157, that is, the conductor layers 163, 167 are formed to fill the blind vias 126, 146, respectively. Thus, conductor posts 200, 202 are formed in dielectric layers 120, 140, respectively.

The subsequent process is similar to the 1H to 1J, that is, the conductor layers 161, 165 and the support substrate 110 are separated, and the support substrate 110 is removed, and the conductive seed layer 151 outside the blind holes 123, 126 is removed. , 155 and conductor layers 161, 163, and the conductive seed layers 153, 157 and conductor layers 165, 167 located outside the blind vias 143, 146.

The main difference between this embodiment and the foregoing embodiment is that the foregoing embodiment performs only one electroplating process to form a conductor layer, and in the present embodiment, two electroplating processes are performed to form a conductor layer. In addition, as shown in FIG. 2D, the present embodiment forms a blind hole because the conductor layers 161 and 165 are formed first. 126, 146, so the conductor layers 161, 165 also have the function of a barrier layer, so there is no need to worry that the laser may penetrate the dielectric layers 120, 140, and the conductive seed layers 151, 153 located at the bottom of the blind holes 123, 143 are also No special thickening.

As shown in FIG. 1J, another embodiment of the present invention provides an interposer 300. The interposer 300 includes a dielectric layer 120, conductor layers 161, 163, and a conductive seed layer 159 (ie, a combination of conductive seed layers 151, 155). The dielectric layer 120 has via holes 129. The conductor layer 163 is disposed in the upper half of the via 129 (ie, the blind via 126). The conductor layer 161 is disposed in the lower half of the via hole 129 (ie, the blind via 123). The conductive seed layer 159 is disposed between the dielectric layer 120 and the conductor layers 161, 163.

Specifically, the upper half of the via hole 129 has an inner end aperture D2, and the lower half of the via hole 129 has an inner end aperture D1, and the inner aperture D2 is smaller than the inner aperture D1.

The above embodiment of the present invention forms the blind vias 126, 146 by forming the conductive seed layers 151, 153 in the blind vias 123, 143, and then using the laser ablation dielectric layers 120, 140 because of the conductive seed layer 151. 153 can be used as a barrier layer, so there is no need to worry that the laser may penetrate the dielectric layers 120, 140, so the laser intensity can be adjusted, and the via holes 129 will not have the dielectric layers 120, 140 remaining in the neck.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.

120‧‧‧ dielectric layer

123, 126‧‧ ‧ blind holes

129‧‧‧through holes

151, 155, 159‧‧‧ conductive seed layer

161, 163‧‧‧ conductor layer

200‧‧‧ conductor column

D1, D2‧‧‧ inner end aperture

300‧‧‧Intermediary board

Claims (10)

A method for manufacturing an interposer includes: forming a first blind via on a first side of a dielectric layer; forming a first conductive seed layer in the first blind via; forming a second blind via a second surface of the dielectric layer opposite to the first surface, wherein the first blind hole is opposite to the second blind hole, and the second blind hole exposes the first conductive seed layer; forming a second The conductive seed layer is in the second blind hole and is in contact with the first conductive seed layer; and a first conductive layer and a second conductive layer are respectively formed to fill the first blind hole and the second blind hole, To form a conductor pillar in the dielectric layer. A method for manufacturing an interposer includes: forming a first blind via on a first side of a dielectric layer; forming a first conductive seed layer in the first blind via; forming a first conductor layer to fill a first blind hole; a second blind hole is formed on a second surface of the interface layer opposite to the first surface, wherein the first blind hole is opposite to the second blind hole, and the second blind hole is exposed Forming a first conductive seed layer; forming a second conductive seed layer in the second blind via and contacting the first conductive seed layer; and forming a second conductive layer to fill the second blind via, To form a conductor pillar in the dielectric layer. A method for manufacturing an interposer includes: providing a substrate, the substrate comprising a support substrate and a dielectric layer disposed on the support substrate; forming a first blind via on the first side of the dielectric layer Forming a first conductive seed layer in the first blind via; separating the dielectric layer from the support substrate, and depositing the dielectric layer on the support substrate; forming a second blind via at the interface a second surface of the layer opposite to the first surface, wherein the first blind hole is opposite to the second blind hole, and the second blind hole exposes the first conductive seed layer; forming a second conductive seed crystal Laying in the second blind via and contacting the first conductive seed layer; and removing the support substrate, forming a first conductor layer to fill the first blind via, and forming a second conductor layer to fill the second Blind holes to form a conductor post in the dielectric layer. A method for manufacturing an interposer includes: providing a substrate, the substrate comprising a support substrate and a dielectric layer disposed on the support substrate; forming a first blind via on the first side of the dielectric layer Forming a first conductive seed layer in the first blind via; forming a first conductor layer to fill the first blind via; separating the dielectric layer from the support substrate, and placing the dielectric layer on the Supporting the substrate; Forming a second blind hole in a second surface of the interface layer opposite to the first surface, wherein the first blind hole is opposite to the second blind hole, and the second blind hole exposes the first conductive seed crystal Forming a second conductive seed layer in the second blind via and contacting the first conductive seed layer; and forming a second conductor layer to fill the second blind via to form a conductor pillar In the dielectric layer. The manufacturing method according to any one of claims 1 to 4, wherein a thickness of the first conductive seed layer located at a bottom of the first blind via is greater than a thickness of other portions of the first conductive crystal seed layer. The manufacturing method according to any one of claims 1 to 4, wherein the first blind hole and the second blind hole are formed by laser ablation. The manufacturing method according to any one of claims 1 to 4, wherein the dielectric layer is made of glass. An interposer includes: a dielectric layer having a via hole; a first conductor layer disposed in the upper half of the via hole; and a second conductor layer disposed in the lower half of the via hole And a conductive seed layer disposed between the dielectric layer, the first conductor layer, and the second conductor layer. The interposer of claim 8, wherein the thickness of the conductive seed layer between the first conductor layer and the second conductor layer is greater than the thickness of other portions of the conductive seed layer. The interposer of claim 8, wherein the dielectric layer is made of glass.