TW202105578A - Wafer transportation mechanism and polishing device capable of preventing damages to a wafer due to polishing debris attached to the wafer - Google Patents
Wafer transportation mechanism and polishing device capable of preventing damages to a wafer due to polishing debris attached to the wafer Download PDFInfo
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- TW202105578A TW202105578A TW109121683A TW109121683A TW202105578A TW 202105578 A TW202105578 A TW 202105578A TW 109121683 A TW109121683 A TW 109121683A TW 109121683 A TW109121683 A TW 109121683A TW 202105578 A TW202105578 A TW 202105578A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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Abstract
Description
本發明是有關於一種搬送晶圓的晶圓搬送機構及具備晶圓搬送機構的磨削裝置。The present invention relates to a wafer transport mechanism for transporting wafers and a grinding device provided with the wafer transport mechanism.
將IC、LSI、記憶體等複數個器件以分割預定線區劃並形成於正面之晶圓,是在藉由磨削裝置來磨削背面而形成預定的厚度之後,藉由切割裝置、雷射加工裝置來分割成一個個的器件晶片,而利用於行動電話、個人電腦等電氣機器上。Multiple devices such as IC, LSI, memory, etc. are divided into predetermined lines and formed on the front surface of the wafer. After the back surface is ground by a grinding device to form a predetermined thickness, it is processed by a dicing device and laser. The device is divided into individual device chips and used in electrical equipment such as mobile phones and personal computers.
磨削裝置至少是由片匣載置部、晶圓搬出入組件、暫置組件、第一搬送組件、磨削組件及第二搬送組件所構成,且可以適當地磨削晶圓,前述片匣載置部是供容置有複數個晶圓的片匣載置,前述晶圓搬出入組件是從載置於片匣載置部的片匣將晶圓搬出及搬入,前述暫置組件是供藉由晶圓搬出入組件所搬出之晶圓暫置,前述第一搬送組件是將暫置於暫置組件之晶圓搬送至工作夾台,前述磨削組件是對已保持於工作夾台之晶圓的上表面進行磨削,前述第二搬送組件是將磨削完畢之晶圓從工作夾台搬出並搬送到洗淨組件(參照例如專利文獻1)。第一搬送組件及第二搬送組件包含吸引保持晶圓的吸附墊。 先前技術文獻 專利文獻The grinding device is composed of at least a cassette mounting part, a wafer carrying-out module, a temporary module, a first conveying module, a grinding module, and a second conveying module, and can grind the wafer appropriately. The mounting part is for mounting a cassette containing a plurality of wafers. The aforementioned wafer loading and unloading unit is for loading and unloading wafers from the cassette placed on the cassette mounting unit. The aforementioned temporary unit is for loading and unloading wafers from the cassette placed on the cassette loading unit. The wafers transported by the wafer loading/unloading assembly are temporarily placed. The first transport assembly transports the wafers temporarily placed in the temporary assembly to the work chuck table, and the grinding assembly is for the wafers that have been held on the work chuck table. The upper surface of the wafer is ground, and the second transport unit carries out the polished wafer from the work chuck and transports it to the cleaning unit (see, for example, Patent Document 1). The first transfer unit and the second transfer unit include suction pads that suck and hold the wafers. Prior art literature Patent literature
專利文獻1:日本特開2005-158854號公報Patent Document 1: Japanese Patent Application Publication No. 2005-158854
發明欲解決之課題The problem to be solved by the invention
但是,若以第二搬送組件的吸附墊吸引保持磨削完畢之晶圓的背面時,會有以下問題:附著於晶圓的背面之磨削屑乾燥並固化,且起因於已固化之磨削屑而在後續步驟中損傷晶圓。However, if the suction pad of the second transfer unit is used to attract and hold the back surface of the polished wafer, there will be the following problems: the grinding debris attached to the back surface of the wafer is dried and solidified, and it is caused by the solidified grinding Chips and damage the wafer in subsequent steps.
又,若以第二搬送組件的吸附墊吸引保持已薄化加工之晶圓時,會有以下問題:因在吸附墊與晶圓之間夾入磨削屑而損傷晶圓。In addition, if the suction pad of the second transfer unit is used to suck and hold the thinned wafer, there will be the following problem: the wafer is damaged due to grinding debris sandwiched between the suction pad and the wafer.
有鑒於上述事實而作成之本發明的課題在於提供一種可以防止起因於附著於晶圓之磨削屑而損傷晶圓之情形的晶圓搬送機構及具備晶圓搬送機構的磨削裝置。 用以解決課題之手段The subject of the present invention, made in view of the above facts, is to provide a wafer transfer mechanism and a grinding device provided with the wafer transfer mechanism that can prevent damage to the wafer due to grinding debris attached to the wafer. Means to solve the problem
本發明之第一層面是為了解決上述課題而提供以下的晶圓搬送機構。亦即,本發明之第一層面在於提供一種搬送晶圓的晶圓搬送機構,前述晶圓搬送機構具備保持晶圓的晶圓保持組件、及移動該晶圓保持組件的移動組件, 該晶圓保持組件包含吸引保持部及水供給部,前述吸引保持部具備有吸引保持晶圓的外周區域之多孔面,前述水供給部是配設在該吸引保持部的內側且供給水。The first aspect of the present invention is to provide the following wafer transport mechanism in order to solve the above-mentioned problems. That is, the first aspect of the present invention is to provide a wafer transport mechanism for transporting wafers. The wafer transport mechanism includes a wafer holding assembly for holding wafers and a moving assembly for moving the wafer holding assembly. The wafer holding assembly includes a suction and holding part and a water supply part. The suction and holding part is provided with a porous surface for sucking and holding the outer peripheral area of the wafer. The water supply part is arranged inside the suction and holding part and supplies water.
較佳的是,該吸引保持部是由複數個區段(segment)所構成,且使從該水供給部所供給之水於相鄰的該區段與該區段之間流出。較佳的是,圍繞該吸引保持部而配設有環狀壁,前述環狀壁是抑制從相鄰的該區段與該區段之間流出的水的水勢。Preferably, the suction holding portion is composed of a plurality of segments, and the water supplied from the water supply portion flows out between the adjacent segment and the segment. Preferably, an annular wall is arranged around the suction holding portion, and the aforementioned annular wall suppresses the water potential of the water flowing out from between the adjacent section and the section.
本發明之第二層面是為了解決上述課題而提供以下之磨削裝置。亦即,一種磨削裝置,至少是由片匣載置部、晶圓搬出入組件、暫置組件、第一搬送組件、磨削組件及第二搬送組件所構成,前述片匣載置部是供容置有複數個晶圓的片匣載置,前述晶圓搬出入組件是從載置於該片匣載置部的片匣將晶圓搬出及搬入,前述暫置組件是供藉由該晶圓搬出入組件所搬出之晶圓暫置,前述第一搬送組件是將暫置於該暫置組件之晶圓搬送至工作夾台,前述磨削組件是對已保持於該工作夾台之晶圓的上表面進行磨削,前述第二搬送組件是將磨削完畢之晶圓從該工作夾台搬出並搬送到洗淨組件,且前述磨削裝置是由如上述之晶圓搬送機構來構成該第二搬送組件。The second aspect of the present invention is to provide the following grinding device in order to solve the above-mentioned problems. That is, a grinding device is composed of at least a cassette mounting part, a wafer carrying and unloading unit, a temporary unit, a first conveying unit, a grinding unit, and a second conveying unit. The aforementioned cassette mounting unit is A cassette containing a plurality of wafers is placed. The aforementioned wafer carry-out assembly is used to carry out and carry out wafers from the cassette placed on the cassette placing portion, and the aforementioned temporary assembly is used for The wafers transported out of the wafer loading and unloading assembly are temporarily placed. The first transport assembly is to transport the wafers temporarily placed in the temporary assembly to the work chuck table, and the grinding assembly is for the wafers that have been held on the work chuck table. The upper surface of the wafer is ground, the second transport assembly is to transport the polished wafer from the work chuck and transport it to the cleaning assembly, and the grinding device is provided by the wafer transport mechanism as described above The second conveying unit is constituted.
較合適的是,在該工作夾台與該洗淨組件之間配設有乾燥組件,前述乾燥組件是將藉由該第二搬送組件所搬送之晶圓的下表面乾燥。 發明效果Preferably, a drying assembly is arranged between the work clamp table and the cleaning assembly, and the drying assembly is to dry the lower surface of the wafer conveyed by the second conveying assembly. Invention effect
本發明之第一層面的晶圓搬送機構由於具備保持晶圓的晶圓保持組件、及移動該晶圓保持組件的移動組件,且該晶圓保持組件包含吸引保持部及水供給部,前述吸引保持部具備有吸引保持晶圓的外周區域之多孔面,前述水供給部是配設在該吸引保持部的內側且供給水,因此可以將吸引保持晶圓的面積設得較小,並且藉由對以吸引保持部所吸引保持之晶圓供給水,而使附著於晶圓的磨削屑不乾燥且不會有固化之情形。又,在本發明之第一層面的晶圓搬送機構中,由於以吸引保持部吸引保持晶圓的面積較小,因此可減少在吸引保持部的多孔面與晶圓的上表面之間夾入磨削屑之疑慮。從而,根據本發明之第一層面的晶圓搬送機構,可以防止起因於附著於晶圓之磨削屑而損傷晶圓之情形。The wafer transport mechanism of the first level of the present invention is provided with a wafer holding assembly for holding wafers and a moving assembly for moving the wafer holding assembly, and the wafer holding assembly includes a suction holding part and a water supply part. The holding part is equipped with a porous surface that sucks and holds the outer peripheral area of the wafer. The water supply part is arranged inside the suction holding part and supplies water. Therefore, the area for sucking and holding the wafer can be set to be small, and by Water is supplied to the wafer that is sucked and held by the suction and holding portion, so that the grinding debris attached to the wafer is not dried or solidified. In addition, in the wafer transport mechanism of the first layer of the present invention, since the area of the suction and holding portion for sucking and holding the wafer is small, it is possible to reduce the pinching between the porous surface of the suction and holding portion and the upper surface of the wafer Doubts about grinding chips. Therefore, according to the wafer transport mechanism of the first layer of the present invention, it is possible to prevent the wafer from being damaged due to the grinding debris attached to the wafer.
本發明之第二層面的磨削裝置由於至少是由片匣載置部、晶圓搬出入組件、暫置組件、第一搬送組件、磨削組件及第二搬送組件所構成,前述片匣載置部是供容置有複數個晶圓的片匣載置,前述晶圓搬出入組件是從載置於該片匣載置部的片匣將晶圓搬出及搬入,前述暫置組件是供藉由該晶圓搬出入組件所搬出之晶圓暫置,前述第一搬送組件是將暫置於該暫置組件之晶圓搬送至工作夾台,前述磨削組件是對已保持於該工作夾台之晶圓的上表面進行磨削,前述第二搬送組件是將磨削完畢之晶圓從該工作夾台搬出並搬送到洗淨組件,且前述磨削裝置是由如上所述的晶圓搬送機構來構成該第二搬送組件,因此可以將吸引保持晶圓的面積設得較小,並且藉由對以吸引保持部所吸引保持之晶圓供給水,而使附著於晶圓的磨削屑不乾燥且不會有固化之情形。又,在本發明之第二層面的磨削裝置中,由於以吸引保持部吸引保持晶圓的面積較小,因此可減少在吸引保持部的多孔面與晶圓的上表面之間夾入磨削屑之疑慮。從而,根據本發明之第二層面的磨削裝置,可以防止起因於附著於晶圓之磨削屑而損傷晶圓之情形。The grinding device of the second aspect of the present invention is at least composed of a cassette mounting part, a wafer carrying and unloading unit, a temporary unit, a first conveying unit, a grinding unit, and a second conveying unit. The placement section is for placement of cassettes containing a plurality of wafers. The aforementioned wafer carrying-in unit is for transporting wafers out and in from the cassette placed on the cassette placement section, and the aforementioned temporary placement unit is for loading and unloading wafers from the cassette placed on the cassette placement section. By temporarily placing the wafers carried out by the wafer loading and unloading assembly, the first transport assembly transports the wafers temporarily placed in the temporary assembly to the work chuck, and the grinding assembly is used for the work that has been held in the work chuck. The upper surface of the wafer in the chuck table is ground. The second transport assembly is to transport the polished wafer from the work chuck table and transport it to the cleaning assembly, and the above-mentioned grinding device is made of the above-mentioned wafer The circular conveying mechanism constitutes the second conveying unit, so the area of the sucking and holding wafer can be set small, and by supplying water to the wafer that is sucked and held by the sucking and holding portion, the grinding that adheres to the wafer can be made smaller. The shavings are not dry and will not solidify. In addition, in the grinding device of the second layer of the present invention, since the area of the suction and holding portion for sucking and holding the wafer is small, it is possible to reduce the amount of grinding between the porous surface of the suction and holding portion and the upper surface of the wafer. Doubts about shavings. Therefore, according to the grinding device of the second layer of the present invention, it is possible to prevent damage to the wafer caused by the grinding debris attached to the wafer.
用以實施發明之形態The form used to implement the invention
以下,一面參照圖式一面說明依照本發明所構成的晶圓搬送機構及磨削裝置的較佳實施形態。Hereinafter, the preferred embodiments of the wafer transport mechanism and the grinding device constructed according to the present invention will be described with reference to the drawings.
首先,參照圖1至圖3來說明依照本發明所構成的晶圓搬送機構的較佳實施形態。如圖1所示,晶圓搬送機構2具備保持晶圓的晶圓保持組件4、及移動晶圓保持組件4的移動組件6。First, referring to FIGS. 1 to 3, a preferred embodiment of the wafer transport mechanism constructed in accordance with the present invention will be described. As shown in FIG. 1, the wafer transport mechanism 2 includes a
如圖2所示,晶圓保持組件4包含吸引保持部8及水供給部10,前述吸引保持部8具備有吸引保持晶圓的外周區域之多孔面P,前述水供給部10是配設在吸引保持部8的內側且供給水。As shown in FIG. 2, the
如圖2所示,圖示之實施形態的吸引保持部8是由複數個(在圖示的實施形態中為6個)區段12所構成,前述區段12是由多孔質陶瓷等多孔質構件形成為圓弧狀之區段,且複數個區段12是配置成環狀。區段12是受到支撐構件14所支撐,此支撐構件14包含圓形壁16、及從圓形壁16的周緣朝下方延伸的環狀壁18。複數個區段12互相在圓周方向上隔著間隔而固定於圓形壁16的下表面,且被環狀壁18所圍繞。藉由複數個區段12的外周面12a所規定的圓周的外徑,是用來保持之圓板狀的晶圓W(參照圖3)的直徑以下。又,在各區段12的外周面12a、內周面12b以圓周方向端面12c的每一個面上均被覆有樹脂,另一方面,在各區段12的下表面未被覆有樹脂,各個區段12的下表面是形成為多孔面P。各區段12的多孔面P的上下方向位置是相同的。As shown in FIG. 2, the suction and
如圖1及圖2(a)所示,在圓形壁16的上表面附設有連通於各區段12的複數個(在圖示的實施形態中為6個)圓筒狀吸引口20。如圖1所示,各吸引口20是透過設有閥22的流路24而連接於吸引源26。並且,在吸引保持部8中是形成為:藉由在已打開閥22的狀態下使吸引源26作動並在多孔面P生成吸引力,而如圖3所示,以多孔面P吸引保持晶圓W的外周。如此,在晶圓保持組件4中,由於是以複數個區段12吸引保持晶圓W的外周區域,所以即使將各區段12的直徑方向的寬度設得較小仍然可以確實地吸引保持晶圓W,而可以將吸引保持晶圓W的面積設得較小。As shown in Figs. 1 and 2(a), a plurality of (six in the illustrated embodiment)
如圖2所示,圖示之實施形態的水供給部10是由貫通圓形壁16的複數個(在圖示的實施形態中為3個)圓筒狀構件所構成。各水供給部10是配設得比構成吸引保持部8之各區段12更靠向徑方向內側。如圖1所示,各水供給部10是透過設置有閥28的流路30而連接於水供給源32。As shown in FIG. 2, the
並且,在晶圓保持組件4中是形成為:藉由在以吸引保持部8的多孔面P保持有晶圓W的狀態下打開閥28,而將水供給源32的水從水供給部10供給到晶圓W的上表面。已供給到晶圓W的上表面之水在從相鄰的區段12與區段12之間流出時,從相鄰的區段12與區段12之間流出之水的水勢,會受到圍繞吸引保持部8而配設的環狀壁18所抑制。藉此,可在晶圓W的上表面形成水層,而使附著於晶圓W之磨削屑不乾燥且不會有固化之情形。In addition, in the
如圖1所示,移動組件6具有:固定於支撐構件14的圓形壁16且朝上下方向延伸的連結軸34、從連結於連結軸34的上端的一端部實質上水平地延伸的臂36、固定於臂36的另一端部且朝上下方向延伸的旋轉軸38、以朝上下方向延伸的軸線為中心而使旋轉軸38旋轉的馬達(未圖示)、及使旋轉軸38升降的電動汽缸等的升降組件(未圖示)。As shown in FIG. 1, the moving assembly 6 has a connecting
如圖2所示,連結軸34具有:圓柱狀的主部34a、形成於主部34a的下端且直徑比主部34a更小的圓形的小徑部34b、及形成於主部34a的上端且直徑比主部34a更大的圓形的凸緣部34c。並且,將連結軸34的小徑部34b嵌合於圓形壁16之形成於中心部分的圓形開口16a,而將連結軸34與圓形壁16相固定。As shown in FIG. 2, the connecting
如圖3所示,於臂36的一端部形成有朝上下方向延伸的圓形的貫通開口40。在此貫通開口40升降自如地插入有連結軸34。在貫通開口40的上端側周緣形成有直徑比貫通開口40更大的圓形的凹處42。藉由在此凹處42定位有連結軸34的凸緣部34c,而形成為連結軸34不會從臂36脫落。As shown in FIG. 3, a circular through
如藉由參照圖3而可理解地,於臂36的一端部的下表面與支撐構件14的圓形壁16的上表面之間附設有線圈彈簧44。線圈彈簧44是配置於連結軸34的主部34a的徑方向外側。藉此,形成為可在將吸引保持部8的多孔面P定位在晶圓W的上表面時,壓縮線圈彈簧44而使吸引保持部8與支撐構件14一起上升,來緩和從多孔面P作用於晶圓W的衝擊。As can be understood by referring to FIG. 3, a
在使用晶圓搬送機構2來搬送磨削完畢之晶圓W時,首先,是以馬達使旋轉軸38合宜旋轉並且以升降組件使其合宜升降,藉此將晶圓保持組件4的吸引保持部8的多孔面P定位到已放置在合宜的工作台(未圖示)之晶圓W的外周區域的上方。接著,以升降組件使旋轉軸38下降,並使吸引保持部8的多孔面P密合於晶圓W的上表面的外周區域。接著,在已打開流路24的閥22的狀態下使吸引源26作動而在多孔面P生成吸引力,並如圖3所示,以多孔面P來吸引保持晶圓W的上表面的外周區域。When using the wafer transport mechanism 2 to transport the polished wafer W, firstly, the rotating
接著,打開流路30的閥28而將水從水供給部10供給到晶圓W的上表面。接著,藉由以馬達使旋轉軸38合宜旋轉並且以升降組件來使其合宜升降,來搬送以晶圓保持組件4所保持之晶圓W,並使晶圓W的下表面接觸於用來載置晶圓W之合宜的工作台(未圖示)的上表面。接著,關閉閥28並停止來自水供給部10之水的供給。然後,停止吸引源26並解除由多孔面P所進行之晶圓W的吸引保持,而將晶圓W載置於工作台的上表面。如此進行而以晶圓搬送機構2搬送晶圓W。Next, the
如以上所述,在圖示之實施形態的晶圓搬送機構2中,由於是以吸引保持部8吸引保持晶圓W的外周區域,因此可以將吸引保持晶圓W的面積設得較小,並且藉由對以吸引保持部8所吸引保持之晶圓W供給水,而使附著於晶圓W的磨削屑不乾燥且不會有固化之情形。又,在晶圓搬送機構2中,由於以吸引保持部8吸引保持晶圓W的面積較小,因此可以減少在吸引保持部8的多孔面P與晶圓W的上表面之間夾入磨削屑之疑慮。從而,根據晶圓搬送機構2,可以防止起因於附著於晶圓W之磨削屑而損傷晶圓W之情形。As described above, in the wafer transport mechanism 2 of the illustrated embodiment, since the outer peripheral area of the wafer W is sucked and held by the suction and holding
其次,參照圖4來說明依照本發明所構成之磨削裝置的較佳實施形態。以符號50來表示整體的磨削裝置至少是由片匣載置部54、晶圓搬出入組件56、暫置組件58、第一搬送組件62、磨削組件64及第二搬送組件所構成,前述片匣載置部54是供容置有複數個晶圓W的片匣52載置,前述晶圓搬出入組件56是從載置於片匣載置部54的片匣52將晶圓W搬出及搬入,前述暫置組件58是供藉由晶圓搬出入組件56所搬出之晶圓W暫置,前述第一搬送組件62是將暫置於暫置組件58之晶圓W搬送到工作夾台60,前述磨削組件64是對已保持於工作夾台60之晶圓W的上表面進行磨削,前述第二搬送組件是將磨削完畢之晶圓W從工作夾台60搬出並搬送到洗淨組件66,且第二搬送組件是由上述之晶圓搬送機構2所構成。Next, referring to FIG. 4, a preferred embodiment of the grinding device constructed in accordance with the present invention will be described. The overall grinding device denoted by the
圖示之實施形態的片匣載置部54具有:第一片匣載置部54a,供容置有磨削加工前之複數個晶圓W的第一片匣52a載置;及第二片匣載置部54b,供容置磨削加工後之複數個晶圓W的第二片匣52b載置。如圖4所示,磨削裝置50具備有長方體形的基台68,第一片匣載置部54a及第二片匣載置部54b是在基台68的上表面互相隔著間隔而配置。The
晶圓搬出入組件56是配置在第一片匣載置部54a與第二片匣載置部54b之間。晶圓搬出入組件56包含支撐於基台68的多關節臂70、使多關節臂70作動的電動或空氣驅動的致動器(未圖示)、及附設於多關節臂70的前端的保持片72。於單面形成有複數個吸引孔(未圖示)之保持片72是連接於吸引源(未圖示)。The wafer carry-in
並且,在晶圓搬出入組件56中,是形成為:藉由以吸引源在保持片72的單面生成吸引力而以保持片72的單面吸引保持晶圓W,又,藉由以致動器使多關節臂70作動,而將以保持片72的單面所吸引保持之磨削加工前的晶圓W從第一片匣52a搬出至暫置組件58,且將以保持片72的單面所吸引保持之磨削加工後的晶圓W從洗淨組件66搬入到第二片匣52b。In addition, in the wafer carry-out
暫置組件58是在基台68的上表面且與第一片匣載置部54a相鄰而配置。暫置組件58具有直徑比晶圓W的直徑更小的圓形的暫置工作台74、沿著暫置工作台74的徑方向移動自如地在暫置工作台74的周圍隔著間隔而配置的複數個銷76、及使複數個銷76沿著暫置工作台74的徑方向同步移動的銷移動組件(未圖示)。並且,在暫置組件58中是形成為:藉由讓複數個銷76抵接於已暫置於暫置工作台74之晶圓W的周緣,而使晶圓W的中心與暫置工作台74的中心一致。The
如圖4所示,在基台68的上表面旋轉自如地設置有圓形的轉台78,轉台78是藉內置於基台68的轉台用馬達(未圖示)而朝從上方觀看逆時針方向旋轉。在轉台78的上表面周緣側,在圓周方向上等間隔隔開而旋轉自如地搭載有3個工作夾台60,工作夾台60是藉裝設於轉台78的下表面之工作夾台用馬達(未圖示)而以朝上下方向延伸的軸線作為中心來旋轉。又,在圖4中,各工作夾台60是形成為:藉由轉台78的旋轉而依序定位到以符號A表示的裝卸位置、以符號B表示的粗磨削位置、及以符號C表示的精磨削位置。As shown in FIG. 4, a
各工作夾台60的上端部分配置有多孔質的圓形的吸附夾頭80。於吸附夾頭80是選擇性地連接到吸引源(未圖示)及空氣供給源(未圖示)。A porous
並且,在工作夾台60中是形成為:藉由以吸引源在吸附夾頭80的上表面生成吸引力,而吸引保持已載置於吸附夾頭80的上表面之晶圓W。又,在工作夾台60中是形成為:藉由從空氣供給源對吸附夾頭80供給空氣來從吸附夾頭80的上表面噴出空氣,而使晶圓W從吸附夾頭80分開。In addition, the
第一搬送組件62是配置於暫置組件58與轉台78之間。第一搬送組件62具有:旋轉自如且升降自如地裝設在基台68且從基台68的上表面朝上方延伸的旋轉軸84、從旋轉軸84的上端實質上水平地延伸的臂86、附設在臂86的前端下表面的吸附片88、使旋轉軸84旋轉的旋轉軸用馬達(未圖示)、及使旋轉軸84升降的電動汽缸等的升降組件(未圖示)。於下表面形成有複數個吸引孔(未圖示)之吸附片88是連接於吸引源(未圖示)。The
並且,在第一搬送組件62中是形成為:藉由以吸引源在吸附片88的下表面生成吸引力,而以吸附片88的下表面吸引保持已暫置於暫置組件58的晶圓W,又,藉由以升降組件及旋轉軸用馬達使旋轉軸84升降及旋轉,而將以吸附片88的下表面所吸引保持的晶圓W從暫置組件58搬送到已定位在裝卸位置A之工作夾台60。In addition, in the
圖示之實施形態的磨削組件64包含從基台68的端部朝上方延伸的裝設壁90、任一個都在裝設壁90的單面升降自如地裝設的第一升降板92和第二升降板94、使第一升降板92升降的第一升降機構96、及使第二升降板94升降的第二升降機構98。The grinding
第一升降機構96具有沿著裝設壁90的單面朝上下方向延伸的滾珠螺桿100、及使滾珠螺桿100旋轉的馬達102。滾珠螺桿100的螺帽部(未圖示)是連結於第一升降板92。並且,在第一升降機構96中是形成為:藉由滾珠螺桿100將馬達102的旋轉運動轉換成直線運動並傳達至第一升降板92,而使第一升降板92沿著已附設於裝設壁90的單面之引導軌道90a升降。再者,針對第二升降機構98,由於宜和第一升降機構96為相同的構成,因此附加和第一升降機構96的構成相同的符號,並省略說明。The
又,磨削組件64包含裝設於第一升降板92的單面之粗磨削單元104、及裝設於第二升降板94的單面之精磨削單元106。粗磨削單元104包含從第一升降板92的單面突出的突出壁108、以朝上下方向延伸的軸線為中心而旋轉自如地支撐於突出壁108的主軸110、及搭載於突出壁108的上表面且使主軸110旋轉的主軸用馬達112。在主軸110的下端固定有圓板狀的輪座114,且在輪座114的下表面固定有粗磨削用的磨削磨石116。再者,針對精磨削單元106,由於除了將由粒度比粗磨削用的磨削磨石116的磨粒更小的磨粒所形成的精磨削用的磨削磨石118固定於輪座114的下表面以外,宜為與粗磨削單元104相同的構成,因此附加與粗磨削單元104的構成相同的符號,並省略說明。In addition, the grinding
在基台68的上表面設置有相鄰於裝卸位置A且噴射洗淨水的洗淨水噴嘴120。並且,可藉由在施行粗磨削加工及精磨削加工後,從洗淨水噴嘴120朝向已定位在裝卸位置A之晶圓W的上表面(磨削面)噴射洗淨水,而洗淨晶圓W的上表面。The upper surface of the
如圖4所示,洗淨組件66是在基台68的上表面相鄰於第二片匣載置部54b而配置。洗淨組件66包含旋轉自如地裝設在基台68之圓形的旋轉工作台122、使旋轉工作台122旋轉的旋轉工作台用馬達(未圖示)、對已保持在旋轉工作台122之晶圓W噴射洗淨水的洗淨水噴嘴(未圖示)、及對已保持在旋轉工作台122之晶圓W噴射乾燥空氣的空氣噴嘴(未圖示)。旋轉工作台122的直徑比晶圓W的直徑更小。又,在旋轉工作台122的上端部分配置有多孔質之圓形狀的吸附夾頭124,且吸附夾頭124是選擇性地連接於吸引源(未圖示)及空氣供給源(未圖示)。As shown in FIG. 4, the washing|cleaning
並且,在洗淨組件66中是形成為:藉由以吸引源在吸附夾頭124的上表面生成吸引力而以旋轉工作台122吸引保持晶圓W,並且一面使吸引保持有晶圓W的旋轉工作台122旋轉,一面從洗淨水噴嘴噴射洗淨水來洗淨晶圓W,並且從空氣噴嘴噴射乾燥空氣來使晶圓W乾燥。又,在洗淨組件66中是形成為:在洗淨晶圓W後,藉由從空氣供給源對吸附夾頭124供給空氣來從吸附夾頭124的上表面噴出空氣,而使晶圓W從吸附夾頭124分開。In addition, in the
構成第二搬送組件之晶圓搬送機構2是配置於洗淨組件66與轉台78之間,且將晶圓搬送機構2之移動組件6的旋轉軸38旋轉自如且升降自如地裝設於基台68的上表面。並且,在晶圓搬送機構2中是形成為:將定位在裝卸位置A之工作夾台60所保持的磨削完畢之晶圓W從工作夾台60搬出,並搬送到洗淨組件66。The wafer transfer mechanism 2 constituting the second transfer assembly is arranged between the cleaning
又,在圖示之實施形態的磨削裝置50中配設有乾燥組件126,前述乾燥組件126可將在工作夾台60與洗淨組件66之間被第二搬送組件(晶圓搬送機構2)所搬送之晶圓W的下表面乾燥。圖示之實施形態的乾燥組件126具有形成於基台68的上表面之複數個噴射孔128、及連接於各噴射孔128之空氣供給源(未圖示),各噴射孔128是位於晶圓搬送機構2的晶圓保持組件4通過的路徑(晶圓W的搬送路徑)的下方。並且,在乾燥組件126中是形成為:對已保持於晶圓保持組件4之搬送中的晶圓W的下表面噴射乾燥空氣,而將晶圓W的下表面乾燥。In addition, the grinding
接著,說明使用如上述之磨削裝置50來磨削晶圓W的方法。在圖示之實施形態中,首先是實施片匣載置步驟,前述片匣載置步驟是將容置有磨削加工前之複數個晶圓W的第一片匣52a載置於第一片匣載置部54a,並且將容置磨削加工後之複數個晶圓W的空的第二片匣52b載置於第二片匣載置部54b。Next, a method of grinding the wafer W using the grinding
實施片匣載置步驟後,實施從第一片匣52a搬出晶圓W並暫置於暫置組件58的暫置步驟。在暫置步驟中,首先是使晶圓搬出入組件56的多關節臂70作動,並使形成有複數個吸引孔的保持片72的單面密合於已容置在第一片匣52a之磨削加工前的晶圓W,而以保持片72來吸引保持晶圓W。接著,作動多關節臂70,將晶圓W從第一片匣52a搬出,並使晶圓W的下表面接觸於暫置組件58的暫置工作台74的上表面。接著,解除由保持片72所進行之晶圓W的吸引保持,將晶圓W暫置在暫置工作台74。並且,藉由讓複數個銷76抵接於已暫置在暫置工作台74之晶圓W的周緣,而使晶圓W的中心與暫置工作台74的中心一致。After the cassette placement step is performed, the temporary placement step of unloading the wafer W from the
實施暫置步驟之後,實施第一搬送步驟,前述第一搬送步驟是將暫置在暫置組件58的晶圓W搬送至工作夾台60。在第一搬送步驟中,首先是使第一搬送組件62的旋轉軸84旋轉,而將第一搬送組件62的吸附片88定位到已暫置於暫置組件58之晶圓W的上方。接著,使吸附片88下降而使吸附片88的下表面密合於晶圓W的上表面,並且以吸附片88的下表面吸引保持晶圓W。接著,使旋轉軸84升降及旋轉,而將以吸附片88所吸引保持之晶圓W從暫置組件58搬送到已定位在裝卸位置A之工作夾台60。After the temporary placement step is performed, the first transport step is performed. The aforementioned first transport step is to transport the wafer W temporarily placed in the
實施第一搬送步驟後,實施對已保持在工作夾台60之晶圓W的上表面進行磨削的磨削步驟。在磨削步驟中,首先是以工作夾台60吸引保持晶圓W。接著,使轉台78旋轉120度,而將吸引保持有晶圓W之工作夾台60定位到粗磨削位置B。接著,以預定的旋轉速度使工作夾台60朝從上方觀看逆時針方向旋轉,並且以預定的旋轉速度使主軸110朝從上方觀看逆時針方向旋轉。接著,以第一升降機構96使主軸110下降,且一邊對磨削區域供給磨削水一邊使粗磨削用的磨削磨石116接觸於晶圓W的上表面。之後,以預定的磨削進給速度使主軸110下降。藉此,可以對晶圓W的上表面施行粗磨削加工。After the first transfer step is performed, a grinding step of grinding the upper surface of the wafer W held on the
接著,使轉台78旋轉120度,而將吸引保持有晶圓W之工作夾台60定位到精磨削位置C。接著,與粗磨削加工同樣地,以預定的旋轉速度使工作夾台60朝從上方觀看逆時針方向旋轉,並且以預定的旋轉速度使主軸110朝從上方觀看逆時針方向旋轉。接著,以第二升降機構98使主軸110下降,且一邊對磨削區域供給磨削水一邊使精磨削用的磨削磨石118接觸於晶圓W的上表面。之後,以預定的磨削進給速度使主軸110下降。藉此,可以對晶圓W的上表面施行精磨削加工。在實施精磨削加工後,使轉台78旋轉120度,而將吸引保持有晶圓W的工作夾台60定位到裝卸位置A。接著,從洗淨水噴嘴120朝向晶圓W的上表面(磨削面)噴射洗淨水,來洗淨晶圓W的上表面。Next, the
實施磨削步驟之後,實施將磨削完畢之晶圓W從工作夾台60搬出並搬送至洗淨組件66的第二搬送步驟。在第二搬送步驟中,首先是使構成第二搬送組件之晶圓搬送機構2的移動組件6的旋轉軸38旋轉,而將晶圓保持組件4的吸引保持部8的多孔面P定位到放置於已定位在裝卸位置A的工作夾台60之晶圓W的外周區域的上方。接著,使吸引保持部8下降,而使吸引保持部8的多孔面P密合於晶圓W的上表面的外周區域,且吸引保持晶圓W,並且從水供給部10對晶圓W的上表面供給水。接著,解除由工作夾台60所進行之晶圓W的吸引保持。After the grinding step is performed, the second conveying step of unloading the polished wafer W from the
接著,藉由從吸附夾頭80噴出空氣及水之雙流體,使晶圓W從工作夾台60分開,並且使晶圓保持組件4上升,而將以晶圓保持組件4所保持之晶圓W從工作夾台60搬送到洗淨組件66的旋轉工作台122。在此,在搬送晶圓W時,會從乾燥組件126的各噴射孔128噴射乾燥空氣,來使搬送中的晶圓W的下表面乾燥。並且,在使晶圓W的下表面接觸於旋轉工作台122的上表面後,解除由吸引保持部8的多孔面P所進行之晶圓W的吸引保持。Next, by spraying the dual fluid of air and water from the
已實施第二搬送步驟之後,實施對磨削完畢之晶圓W進行洗淨的洗淨步驟。在洗淨步驟中,首先是以旋轉工作台122吸引保持晶圓W。接著,一邊使旋轉工作台122旋轉一邊從洗淨水噴嘴噴射洗淨水來洗淨晶圓W。藉此,可以去除附著於晶圓W的磨削屑及磨削水等來洗淨晶圓W,並且可以利用由旋轉工作台122的旋轉所形成之離心力來從晶圓W去除洗淨水。接著,一邊使旋轉工作台122旋轉一邊從空氣噴嘴噴射乾燥空氣。藉此,可以將無法以由旋轉工作台122的旋轉所形成之離心力來完全去除的洗淨水從晶圓W去除並使晶圓W乾燥。然後,解除由旋轉工作台122所進行之晶圓W的吸引保持。After the second transport step has been performed, a cleaning step of cleaning the polished wafer W is performed. In the cleaning step, first, the wafer W is sucked and held by the rotating table 122. Next, while rotating the rotary table 122, washing water is sprayed from the washing water nozzle to wash the wafer W. Thereby, the grinding debris, grinding water, etc. attached to the wafer W can be removed to clean the wafer W, and the centrifugal force formed by the rotation of the rotating table 122 can be used to remove the washing water from the wafer W. Next, while rotating the rotary table 122, dry air is sprayed from the air nozzle. Thereby, the washing water that cannot be completely removed by the centrifugal force formed by the rotation of the rotating table 122 can be removed from the wafer W and the wafer W can be dried. Then, the suction and holding of the wafer W by the rotary table 122 is released.
實施洗淨步驟之後,實施片匣搬入步驟,前述片匣搬入步驟是將洗淨完畢之晶圓W從洗淨組件66搬出並搬入至第二片匣52b。在片匣搬入步驟中,首先是使晶圓搬出入組件56的多關節臂70作動,使保持片72的單面密合於已放置在旋轉工作台122之晶圓W。接著,藉由從旋轉工作台122的吸附夾頭124的上表面噴出空氣來使晶圓W從吸附夾頭124分開,並且以保持片72吸引保持晶圓W。接著,作動多關節臂70,將洗淨完畢之晶圓W從洗淨組件66搬出,並搬入至第二片匣52b。並且,解除由保持片72所進行之晶圓W的吸引保持。After the cleaning step is performed, the cassette loading step is performed. The cassette loading step is to unload the cleaned wafer W from the cleaning
如以上所述,在圖示之實施形態的磨削裝置50中,由於將磨削完畢之晶圓W從工作夾台60搬出並搬送至洗淨組件66的第二搬送組件是由晶圓搬送機構2所構成,且以吸引保持部8來吸引保持晶圓W的外周區域,因此可以將吸引保持晶圓W的面積設得較小,並且藉由對以吸引保持部8所吸引保持之晶圓W供給水,而使附著於晶圓W的磨削屑不乾燥且不會有固化之情形。又,在磨削裝置50中,由於以吸引保持部8吸引保持晶圓W的面積較小,因此可以減少在吸引保持部8的多孔面P與晶圓W的上表面之間夾入磨削屑之疑慮。從而,根據磨削裝置50,可以防止起因於附著於晶圓W之磨削屑而損傷晶圓W之情形。As described above, in the grinding
2:晶圓搬送機構 4:晶圓保持組件 6:移動組件 8:吸引保持部 10:水供給部 12:區段 12a:外周面 12b:內周面 12c:圓周方向端面 14:支撐構件 16:圓形壁 16a:圓形開口 18:環狀壁 20:吸引口 22,28:閥 24,30:流路 26:吸引源 32:水供給源 34:連結軸 34a:主部 34b:小徑部 34c:凸緣部 36,86:臂 38:旋轉軸 40:貫通開口 42:凹處 44:線圈彈簧 50:磨削裝置 52:片匣 52a:第一片匣 52b:第二片匣 54:片匣載置部 54a:第一片匣載置部 54b:第二片匣載置部 56:晶圓搬出入組件 58:暫置組件 60:工作夾台 62:第一搬送組件 64:磨削組件 66:洗淨組件 68:基台 70:多關節臂 72:保持片 74:暫置工作台 76:銷 78:轉台 80:吸附夾頭 84:旋轉軸 88:吸附片 90:裝設壁 90a:引導軌道 92:第一升降板 94:第二升降板 96:第一升降機構 98:第二升降機構 100:滾珠螺桿 102:馬達 104:粗磨削單元 106:精磨削單元 108:突出壁 110:主軸 112:主軸用馬達 114:輪座 116:粗磨削用的磨削磨石 118:精磨削用的磨削磨石 120:洗淨水噴嘴 122:旋轉工作台 124:吸附夾頭 126:乾燥組件 128:噴射孔 A:裝卸位置 B:粗磨削位置 C:精磨削位置 P:多孔面 W:晶圓2: Wafer transport mechanism 4: Wafer holding component 6: Moving components 8: suction and holding part 10: Water Supply Department 12: section 12a: outer peripheral surface 12b: inner peripheral surface 12c: End face in the circumferential direction 14: Supporting member 16: round wall 16a: round opening 18: Annular wall 20: suction mouth 22, 28: Valve 24, 30: flow path 26: Attraction source 32: Water supply source 34: connecting shaft 34a: Main part 34b: Small diameter part 34c: Flange 36, 86: arm 38: Rotation axis 40: Through opening 42: recess 44: coil spring 50: Grinding device 52: film cassette 52a: first cassette 52b: second cassette 54: Cassette placement section 54a: The first cassette placement part 54b: Second cassette placement part 56: Wafer moving in and out of components 58: Temporary components 60: work clamp 62: The first transport unit 64: Grinding components 66: Wash the components 68: Abutment 70: Multi-joint arm 72: keep the piece 74: Temporary Workbench 76: pin 78: turntable 80: Adsorption Chuck 84: Rotation axis 88: Adsorption sheet 90: installation wall 90a: guide track 92: The first lifting plate 94: The second lifting plate 96: The first lifting mechanism 98: The second lifting mechanism 100: Ball screw 102: Motor 104: Rough grinding unit 106: Fine grinding unit 108: protruding wall 110: Spindle 112: Spindle motor 114: wheel seat 116: Grinding stone for rough grinding 118: Grinding stone for fine grinding 120: Washing water nozzle 122: Rotating table 124: Adsorption Chuck 126: Drying components 128: Jet hole A: Loading and unloading position B: Rough grinding position C: Fine grinding position P: Porous surface W: Wafer
圖1是依照本發明所構成的晶圓搬送機構的立體圖。 圖2(a)是圖1所示之晶圓搬送機構的分解立體圖,(b)是從下表面側觀看(a)所示之晶圓保持組件的立體圖。 圖3是顯示藉由圖1所示之晶圓保持組件而保持有晶圓之狀態的截面圖。 圖4為依照本發明所構成的磨削裝置的立體圖。Fig. 1 is a perspective view of a wafer transport mechanism constructed in accordance with the present invention. Fig. 2 (a) is an exploded perspective view of the wafer transport mechanism shown in Fig. 1, and (b) is a perspective view of the wafer holding assembly shown in (a) viewed from the lower surface side. 3 is a cross-sectional view showing a state in which a wafer is held by the wafer holding assembly shown in FIG. 1. Fig. 4 is a perspective view of a grinding device constructed in accordance with the present invention.
4:晶圓保持組件 4: Wafer holding component
6:移動組件 6: Moving components
8:吸引保持部 8: suction and holding part
10:水供給部 10: Water Supply Department
12:區段 12: section
12a:外周面 12a: outer peripheral surface
12b:內周面 12b: inner peripheral surface
12c:圓周方向端面 12c: End face in the circumferential direction
14:支撐構件 14: Supporting member
16:圓形壁 16: round wall
16a:圓形開口 16a: round opening
18:環狀壁 18: Annular wall
20:吸引口 20: suction mouth
34:連結軸 34: connecting shaft
34a:主部 34a: Main part
34b:小徑部 34b: Small diameter part
34c:凸緣部 34c: Flange
36:臂 36: arm
44:線圈彈簧 44: coil spring
P:多孔面 P: Porous surface
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JP3082603B2 (en) * | 1994-11-22 | 2000-08-28 | 住友金属工業株式会社 | Wafer transfer device |
JPH09306974A (en) * | 1996-05-14 | 1997-11-28 | Toshiba Corp | Work holder |
JP2000106390A (en) * | 1998-09-29 | 2000-04-11 | Disco Abrasive Syst Ltd | Wafer-carrier device |
JP2003197710A (en) * | 2001-12-27 | 2003-07-11 | Sharp Corp | Apparatus and method for thin layer processing of prate- like object |
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