JP2021015872A - Wafer conveyance mechanism and polishing apparatus - Google Patents
Wafer conveyance mechanism and polishing apparatus Download PDFInfo
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- JP2021015872A JP2021015872A JP2019129155A JP2019129155A JP2021015872A JP 2021015872 A JP2021015872 A JP 2021015872A JP 2019129155 A JP2019129155 A JP 2019129155A JP 2019129155 A JP2019129155 A JP 2019129155A JP 2021015872 A JP2021015872 A JP 2021015872A
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- wafer
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- holding
- chuck table
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- 230000007246 mechanism Effects 0.000 title claims abstract description 28
- 238000005498 polishing Methods 0.000 title abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 235000012431 wafers Nutrition 0.000 claims description 273
- 238000004140 cleaning Methods 0.000 claims description 29
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 230000007723 transport mechanism Effects 0.000 claims description 19
- 238000001035 drying Methods 0.000 claims description 12
- 239000008400 supply water Substances 0.000 claims description 4
- 230000032258 transport Effects 0.000 claims 4
- 230000003028 elevating effect Effects 0.000 description 24
- 238000005406 washing Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Abstract
Description
本発明は、ウエーハを搬送するウエーハ搬送機構およびウエーハ搬送機構を備える研削装置に関する。 The present invention relates to a wafer transport mechanism for transporting a wafer and a grinding device including a wafer transport mechanism.
ＩＣ、ＬＳＩ、メモリ等の複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハは、研削装置によって裏面が研削され所定の厚みに形成された後、ダイシング装置、レーザー加工装置によって個々のデバイスチップに分割され携帯電話、パソコン等の電気機器に利用される。 A wafer in which a plurality of devices such as ICs, LSIs, and memories are partitioned by a planned division line and formed on the front surface is individually ground by a dicing device and a laser processing device after the back surface is ground by a grinding device to form a predetermined thickness. It is divided into device chips and used for electrical equipment such as mobile phones and personal computers.
研削装置は、複数のウエーハを収容したカセットが載置されるカセット載置部と、カセット載置部に載置されたカセットからウエーハを搬出および搬入するウエーハ搬出入手段と、ウエーハ搬出入手段によって搬出されたウエーハが仮置きされる仮置き手段と、仮置き手段に仮置きされたウエーハをチャックテーブルまで搬送する第一の搬送手段と、チャックテーブルに保持されたウエーハの上面を研削する研削手段と、研削済みのウエーハをチャックテーブルから搬出し洗浄手段まで搬送する第二の搬送手段と、から少なくとも構成されていて、ウエーハを適正に研削することができる（たとえば特許文献１参照）。第一の搬送手段および第二の搬送手段はウエーハを吸引保持する吸着パッドを含む。 The grinding device is provided by a cassette mounting section on which cassettes accommodating a plurality of wafers are placed, a wafer loading / unloading means for loading and unloading the wafer from the cassette mounted on the cassette mounting section, and a wafer loading / unloading means. Temporary storage means for temporarily placing the carried out wafer, first transport means for transporting the wafer temporarily placed in the temporary placement means to the chuck table, and grinding means for grinding the upper surface of the wafer held by the chuck table. The wafer can be appropriately ground (see, for example, Patent Document 1), which is composed of at least a second transport means for transporting the ground wafer from the chuck table to the carry-out cleaning means. The first transport means and the second transport means include a suction pad that sucks and holds the wafer.
しかし、第二の搬送手段の吸着パッドで研削済みのウエーハの裏面を吸引保持するとウエーハの裏面に付着した研削屑が乾燥して固化し、固化した研削屑に起因して後工程においてウエーハが損傷するという問題がある。 However, when the back surface of the ground wafer is sucked and held by the suction pad of the second transport means, the grinding debris adhering to the back surface of the wafer dries and solidifies, and the wafer is damaged in the subsequent process due to the solidified grinding debris. There is a problem of doing.
また、薄く加工されたウエーハを第二の搬送手段の吸着パッドで吸引保持すると、吸着パッドとウエーハとの間に研削屑が挟まれることによりウエーハが損傷するという問題がある。 Further, when the thinly processed wafer is sucked and held by the suction pad of the second transport means, there is a problem that the wafer is damaged due to the grinding dust being sandwiched between the suction pad and the wafer.
上記事実に鑑みてなされた本発明の課題は、ウエーハに付着した研削屑に起因してウエーハが損傷するのを防止することができるウエーハ搬送機構およびウエーハ搬送機構を備える研削装置を提供することである。 An object of the present invention made in view of the above facts is to provide a grinding apparatus provided with a wafer conveying mechanism and a wafer conveying mechanism capable of preventing the wafer from being damaged due to grinding debris adhering to the wafer. is there.
本発明の第一の局面は上記課題を解決するために以下のウエーハ搬送機構を提供する。すなわち、ウエーハを搬送するウエーハ搬送機構であって、ウエーハを保持するウエーハ保持手段と、該ウエーハ保持手段を移動する移動手段とを備え、該ウエーハ保持手段は、ウエーハの外周領域を吸引保持するポーラス面を備えた吸引保持部と、該吸引保持部の内側に配設され水を供給する水供給部とを含むウエーハ搬送機構を本発明の第一の局面は提供する。 The first aspect of the present invention provides the following wafer transfer mechanism in order to solve the above problems. That is, it is a wafer transport mechanism for transporting a wafer, and includes a wafer holding means for holding the wafer and a moving means for moving the wafer holding means, and the wafer holding means is a porous holding the outer peripheral region of the wafer by suction. The first aspect of the present invention provides a wafer transfer mechanism including a suction holding portion provided with a surface and a water supply portion disposed inside the suction holding portion to supply water.
好ましくは、該吸引保持部は複数のセグメントから構成され隣接する該セグメントと該セグメントとの間に該水供給部から供給された水を流出させる。隣接する該セグメントと該セグメントとの間から流出する水の勢いを抑制する環状壁が該吸引保持部を囲繞して配設されるのが好適である。 Preferably, the suction holding unit is composed of a plurality of segments, and the water supplied from the water supply unit is discharged between the adjacent segments. It is preferable that an annular wall that suppresses the momentum of water flowing out from the adjacent segment and the segment is arranged so as to surround the suction holding portion.
本発明の第二の局面は上記課題を解決するために以下の研削装置を提供する。すなわち、複数のウエーハを収容したカセットが載置されるカセット載置部と、該カセット載置部に載置されたカセットからウエーハを搬出および搬入するウエーハ搬出入手段と、該ウエーハ搬出入手段によって搬出されたウエーハが仮置きされる仮置き手段と、該仮置き手段に仮置きされたウエーハをチャックテーブルまで搬送する第一の搬送手段と、該チャックテーブルに保持されたウエーハの上面を研削する研削手段と、研削済みのウエーハを該チャックテーブルから搬出し洗浄手段まで搬送する第二の搬送手段と、から少なくとも構成された研削装置であって、該第二の搬送手段は、上記のとおりのウエーハ搬送機構から構成される研削装置である。 The second aspect of the present invention provides the following grinding apparatus in order to solve the above problems. That is, by a cassette mounting unit on which a cassette containing a plurality of wafers is placed, a wafer loading / unloading means for loading and unloading a wafer from a cassette mounted on the cassette mounting portion, and a wafer loading / unloading means. A temporary storage means on which the carried-out wafer is temporarily placed, a first transport means for transporting the wafer temporarily placed on the temporary storage means to the chuck table, and an upper surface of the wafer held on the chuck table are ground. A grinding device composed of at least a grinding means and a second transporting means for transporting the ground wafer from the chuck table to the carrying-out cleaning means, wherein the second transporting means is as described above. It is a grinding device composed of a wafer transfer mechanism.
該チャックテーブルと該洗浄手段との間に該第二の搬送手段によって搬送されるウエーハの下面を乾燥する乾燥手段が配設されるのが好都合である。 It is convenient to dispose a drying means for drying the lower surface of the wafer conveyed by the second conveying means between the chuck table and the cleaning means.
本発明の第一の局面のウエーハ搬送機構は、ウエーハを保持するウエーハ保持手段と、該ウエーハ保持手段を移動する移動手段とを備え、該ウエーハ保持手段は、ウエーハの外周領域を吸引保持するポーラス面を備えた吸引保持部と、該吸引保持部の内側に配設され水を供給する水供給部とを含むので、ウエーハを吸引保持する面積を小さくすることができると共に、吸引保持部で吸引保持したウエーハに水を供給することによりウエーハに付着した研削屑が乾燥せず固化することがない。また、本発明の第一の局面のウエーハ搬送機構においては、吸引保持部でウエーハを吸引保持する面積が小さいので、吸引保持部のポーラス面とウエーハの上面との間に研削屑が挟まれるおそれが低減する。したがって、本発明の第一の局面のウエーハ搬送機構によれば、ウエーハに付着した研削屑に起因してウエーハが損傷するのを防止することができる。 The wafer transport mechanism according to the first aspect of the present invention includes a wafer holding means for holding the wafer and a moving means for moving the wafer holding means, and the wafer holding means is a porous holding the outer peripheral region of the wafer by suction. Since the suction holding portion having a surface and the water supply portion that is arranged inside the suction holding portion and supplies water are included, the area for sucking and holding the wafer can be reduced, and the suction holding portion sucks. By supplying water to the retained wafer, the grinding debris adhering to the wafer does not dry and solidify. Further, in the wafer transport mechanism according to the first aspect of the present invention, since the area for sucking and holding the wafer in the suction holding portion is small, there is a possibility that grinding debris may be caught between the porous surface of the suction holding portion and the upper surface of the wafer. Is reduced. Therefore, according to the wafer transfer mechanism according to the first aspect of the present invention, it is possible to prevent the wafer from being damaged due to the grinding debris adhering to the wafer.
本発明の第二の局面の研削装置は、複数のウエーハを収容したカセットが載置されるカセット載置部と、該カセット載置部に載置されたカセットからウエーハを搬出および搬入するウエーハ搬出入手段と、該ウエーハ搬出入手段によって搬出されたウエーハが仮置きされる仮置き手段と、該仮置き手段に仮置きされたウエーハをチャックテーブルまで搬送する第一の搬送手段と、該チャックテーブルに保持されたウエーハの上面を研削する研削手段と、研削済みのウエーハを該チャックテーブルから搬出し洗浄手段まで搬送する第二の搬送手段と、から少なくとも構成された研削装置であって、該第二の搬送手段は、上記のとおりのウエーハ搬送機構から構成されているので、ウエーハを吸引保持する面積を小さくすることができると共に、吸引保持部で吸引保持したウエーハに水を供給することによりウエーハに付着した研削屑が乾燥せず固化することがない。また、本発明の第二の局面の研削装置においては、吸引保持部でウエーハを吸引保持する面積が小さいので、吸引保持部のポーラス面とウエーハの上面との間に研削屑が挟まれるおそれが低減する。したがって、本発明の第二の局面の研削装置によれば、ウエーハに付着した研削屑に起因してウエーハが損傷するのを防止することができる。 The grinding apparatus according to the second aspect of the present invention has a cassette mounting section on which cassettes accommodating a plurality of wafers are mounted, and a wafer unloading section for loading and unloading wafers from the cassette mounted on the cassette mounting section. The loading means, the temporary storage means for temporarily placing the wafer carried out by the wafer loading / unloading means, the first transporting means for transporting the wafer temporarily placed in the temporary placing means to the chuck table, and the chuck table. A grinding device composed of at least a grinding means for grinding the upper surface of the wafer held in the wafer and a second transporting means for transporting the ground wafer from the chuck table to the carrying-out cleaning means. Since the second conveying means is composed of the wafer conveying mechanism as described above, the area for sucking and holding the wafer can be reduced, and water is supplied to the wafer sucked and held by the suction holding portion to supply the wafer. The grinding debris adhering to the wafer does not dry and solidify. Further, in the grinding apparatus of the second aspect of the present invention, since the area where the suction holding portion sucks and holds the wafer is small, there is a possibility that grinding debris may be caught between the porous surface of the suction holding portion and the upper surface of the wafer. Reduce. Therefore, according to the grinding apparatus of the second aspect of the present invention, it is possible to prevent the wafer from being damaged due to the grinding debris adhering to the wafer.
以下、本発明に従って構成されたウエーハ搬送機構および研削装置の好適実施形態について図面を参照しつつ説明する。 Hereinafter, preferred embodiments of the wafer transfer mechanism and the grinding apparatus configured according to the present invention will be described with reference to the drawings.
まず、本発明に従って構成されたウエーハ搬送機構の好適実施形態について図１ないし図３を参照して説明する。図１に示すとおり、ウエーハ搬送機構２は、ウエーハを保持するウエーハ保持手段４と、ウエーハ保持手段４を移動する移動手段６とを備える。 First, a preferred embodiment of the wafer transfer mechanism configured according to the present invention will be described with reference to FIGS. 1 to 3. As shown in FIG. 1, the wafer transport mechanism 2 includes a wafer holding means 4 for holding a wafer and a moving means 6 for moving the wafer holding means 4.
図２に示すとおり、ウエーハ保持手段４は、ウエーハの外周領域を吸引保持するポーラス面Ｐを備えた吸引保持部８と、吸引保持部８の内側に配設され水を供給する水供給部１０とを含む。 As shown in FIG. 2, the wafer holding means 4 includes a suction holding portion 8 having a porous surface P that sucks and holds the outer peripheral region of the wafer, and a water supply portion 10 that is arranged inside the suction holding portion 8 to supply water. And include.
図示の実施形態の吸引保持部８は、図２に示すとおり、多孔質セラミックス等の多孔質部材から円弧状に形成された複数（図示の実施形態では６個）のセグメント１２から構成されており、複数のセグメント１２は環状に配置されている。セグメント１２は支持部材１４に支持されており、この支持部材１４は、円形壁１６と、円形壁１６の周縁から下方に延びる環状壁１８とを含む。複数のセグメント１２は、互いに周方向に間隔をおいて円形壁１６の下面に固定され、環状壁１８に囲繞されている。複数のセグメント１２の外周面１２ａによって規定される円周の外径は、保持すべき円板状のウエーハＷ（図３参照。）の直径以下である。また、各セグメント１２の外周面１２ａ、内周面１２ｂおよび周方向端面１２ｃのそれぞれには樹脂が被覆されている一方、各セグメント１２の下面には樹脂が被覆されておらず、各セグメント１２の下面がポーラス面Ｐとなっている。各セグメント１２のポーラス面Ｐの上下方向位置は同一である。 As shown in FIG. 2, the suction holding portion 8 of the illustrated embodiment is composed of a plurality of (six in the illustrated embodiment) segments 12 formed in an arc shape from a porous member such as a porous ceramic. , The plurality of segments 12 are arranged in a ring shape. The segment 12 is supported by a support member 14, which includes a circular wall 16 and an annular wall 18 extending downward from the periphery of the circular wall 16. The plurality of segments 12 are fixed to the lower surface of the circular wall 16 at intervals in the circumferential direction, and are surrounded by the annular wall 18. The outer diameter of the circumference defined by the outer peripheral surfaces 12a of the plurality of segments 12 is equal to or less than the diameter of the disc-shaped wafer W (see FIG. 3) to be held. Further, while the outer peripheral surface 12a, the inner peripheral surface 12b, and the peripheral end surface 12c of each segment 12 are each coated with resin, the lower surface of each segment 12 is not coated with resin, and each segment 12 has a resin. The lower surface is a porous surface P. The vertical position of the porous surface P of each segment 12 is the same.
図１および図２（ａ）に示すとおり、円形壁１６の上面には、各セグメント１２に連通する複数（図示の実施形態では６個）の円筒状吸引口２０が付設されている。図１に示すとおり、各吸引口２０は、バルブ２２が設けられた流路２４を介して吸引源２６に接続されている。そして、吸引保持部８においては、バルブ２２を開けた状態で吸引源２６を作動させてポーラス面Ｐに吸引力を生成することによって、図３に示すとおり、ウエーハＷの外周をポーラス面Ｐで吸引保持するようになっている。このようにウエーハ保持手段４においては、複数のセグメント１２でウエーハＷの外周領域を吸引保持することから、各セグメント１２の径方向の幅を小さくしてもウエーハＷを確実に吸引保持することができ、ウエーハＷを吸引保持する面積を小さくすることができる。 As shown in FIGS. 1 and 2A, a plurality of (six in the illustrated embodiment) cylindrical suction ports 20 communicating with each segment 12 are attached to the upper surface of the circular wall 16. As shown in FIG. 1, each suction port 20 is connected to the suction source 26 via a flow path 24 provided with a valve 22. Then, in the suction holding portion 8, the suction source 26 is operated with the valve 22 open to generate a suction force on the porous surface P, so that the outer circumference of the wafer W is formed on the porous surface P as shown in FIG. It is designed to hold by suction. As described above, in the wafer holding means 4, since the outer peripheral area of the wafer W is sucked and held by the plurality of segments 12, the wafer W can be reliably sucked and held even if the radial width of each segment 12 is reduced. The area for sucking and holding the wafer W can be reduced.
図示の実施形態の水供給部１０は、図２に示すとおり、円形壁１６を貫通する複数（図示の実施形態では３個）の円筒状部材から構成されている。各水供給部１０は、吸引保持部８を構成する各セグメント１２よりも径方向内側に配設されている。図１に示すとおり、各水供給部１０は、バルブ２８が設けられた流路３０を介して水供給源３２に接続されている。 As shown in FIG. 2, the water supply unit 10 of the illustrated embodiment is composed of a plurality of (three in the illustrated embodiment) cylindrical members penetrating the circular wall 16. Each water supply unit 10 is arranged radially inward with respect to each segment 12 constituting the suction holding unit 8. As shown in FIG. 1, each water supply unit 10 is connected to the water supply source 32 via a flow path 30 provided with a valve 28.
そして、ウエーハ保持手段４においては、吸引保持部８のポーラス面ＰでウエーハＷを保持した状態でバルブ２８を開けることにより、水供給源３２の水を水供給部１０からウエーハＷの上面に供給するようになっている。ウエーハＷの上面に供給された水は、隣接するセグメント１２とセグメント１２との間から流出するところ、隣接するセグメント１２とセグメント１２との間から流出する水の勢いは、吸引保持部８を囲繞して配設されている環状壁１８によって抑制される。これによって、ウエーハＷの上面に水の層が形成され、ウエーハＷに付着した研削屑が乾燥せず固化することがない。 Then, in the wafer holding means 4, the water of the water supply source 32 is supplied from the water supply unit 10 to the upper surface of the wafer W by opening the valve 28 while holding the wafer W on the porous surface P of the suction holding unit 8. It is designed to do. The water supplied to the upper surface of the wafer W flows out from between the adjacent segments 12 and 12, and the momentum of the water flowing out from between the adjacent segments 12 and 12 surrounds the suction holding portion 8. It is suppressed by the annular wall 18 arranged therein. As a result, a layer of water is formed on the upper surface of the wafer W, and the grinding debris adhering to the wafer W does not dry and solidify.
図１に示すとおり、移動手段６は、支持部材１４の円形壁１６に固定され上下方向に延びる連結軸３４と、連結軸３４の上端に連結された一端部から実質上水平に延びるアーム３６と、アーム３６の他端部に固定され上下方向に延びる回転軸３８と、上下方向に延びる軸線を中心として回転軸３８を回転させるモータ（図示していない。）と、回転軸３８を昇降させる電動シリンダ等の昇降手段（図示していない。）とを有する。 As shown in FIG. 1, the moving means 6 includes a connecting shaft 34 fixed to the circular wall 16 of the support member 14 and extending in the vertical direction, and an arm 36 extending substantially horizontally from one end connected to the upper end of the connecting shaft 34. , A rotating shaft 38 fixed to the other end of the arm 36 and extending in the vertical direction, a motor (not shown) for rotating the rotating shaft 38 around an axis extending in the vertical direction, and an electric motor for raising and lowering the rotating shaft 38. It has an elevating means (not shown) such as a cylinder.
図２に示すとおり、連結軸３４は、円柱状の主部３４ａと、主部３４ａの下端に形成され主部３４ａよりも直径が小さい円形の小径部３４ｂと、主部３４ａの上端に形成され主部３４ａよりも直径が大きい円形のフランジ部３４ｃとを有する。そして、円形壁１６の中心部分に形成された円形開口１６ａに連結軸３４の小径部３４ｂが嵌合し、連結軸３４と円形壁１６とが固定されている。 As shown in FIG. 2, the connecting shaft 34 is formed on a columnar main portion 34a, a circular small diameter portion 34b formed at the lower end of the main portion 34a and having a diameter smaller than that of the main portion 34a, and an upper end of the main portion 34a. It has a circular flange portion 34c having a diameter larger than that of the main portion 34a. Then, the small diameter portion 34b of the connecting shaft 34 is fitted into the circular opening 16a formed in the central portion of the circular wall 16, and the connecting shaft 34 and the circular wall 16 are fixed.
図３に示すとおり、アーム３６の一端部には上下方向に延びる円形の貫通開口４０が形成されている。この貫通開口４０には連結軸３４が昇降自在に挿入されている。貫通開口４０の上端側周縁には、貫通開口４０よりも直径が大きい円形の凹所４２が形成されている。この凹所４２に連結軸３４のフランジ部３４ｃが位置づけられており、これによって連結軸３４がアーム３６から抜け落ちないようになっている。 As shown in FIG. 3, a circular through opening 40 extending in the vertical direction is formed at one end of the arm 36. A connecting shaft 34 is vertically inserted into the through opening 40. A circular recess 42 having a diameter larger than that of the through opening 40 is formed on the upper end side peripheral edge of the through opening 40. The flange portion 34c of the connecting shaft 34 is positioned in the recess 42 so that the connecting shaft 34 does not come off from the arm 36.
図３を参照することによって理解されるとおり、アーム３６の一端部の下面と支持部材１４の円形壁１６の上面との間にはコイルばね４４が付設されている。コイルばね４４は連結軸３４の主部３４ａの径方向外側に配置されている。これによって、吸引保持部８のポーラス面ＰをウエーハＷの上面に位置づけた際に、コイルばね４４が圧縮して支持部材１４と共に吸引保持部８が上昇し、ポーラス面ＰからウエーハＷに作用する衝撃が緩和されるようになっている。 As understood by referring to FIG. 3, a coil spring 44 is attached between the lower surface of one end of the arm 36 and the upper surface of the circular wall 16 of the support member 14. The coil spring 44 is arranged outside the main portion 34a of the connecting shaft 34 in the radial direction. As a result, when the porous surface P of the suction holding portion 8 is positioned on the upper surface of the wafer W, the coil spring 44 is compressed and the suction holding portion 8 rises together with the support member 14 and acts on the wafer W from the porous surface P. The impact is designed to be mitigated.
ウエーハ搬送機構２を用いて研削済みのウエーハＷを搬送する際は、まず、回転軸３８をモータで適宜回転させると共に昇降手段で適宜昇降させることにより、適宜のテーブル（図示していない。）に置かれているウエーハＷの外周領域の上方に、ウエーハ保持手段４の吸引保持部８のポーラス面Ｐを位置づける。次いで、回転軸３８を昇降手段で下降させ、ウエーハＷの上面の外周領域に吸引保持部８のポーラス面Ｐを密着させる。次いで、流路２４のバルブ２２を開けた状態で吸引源２６を作動させてポーラス面Ｐに吸引力を生成し、図３に示すとおり、ウエーハＷの上面の外周領域をポーラス面Ｐで吸引保持する。 When transporting the ground wafer W using the wafer transport mechanism 2, first, the rotating shaft 38 is appropriately rotated by a motor and then appropriately raised and lowered by an elevating means to bring it to an appropriate table (not shown). The porous surface P of the suction holding portion 8 of the wafer holding means 4 is positioned above the outer peripheral region of the wafer W on which the wafer W is placed. Next, the rotating shaft 38 is lowered by the elevating means, and the porous surface P of the suction holding portion 8 is brought into close contact with the outer peripheral region of the upper surface of the wafer W. Next, the suction source 26 is operated with the valve 22 of the flow path 24 open to generate a suction force on the porous surface P, and as shown in FIG. 3, the outer peripheral region of the upper surface of the wafer W is sucked and held by the porous surface P. To do.
次いで、流路３０のバルブ２８を開けて水供給部１０から水をウエーハＷの上面に供給する。次いで、回転軸３８をモータで適宜回転させると共に昇降手段で適宜昇降させることにより、ウエーハ保持手段４で保持したウエーハＷを搬送し、ウエーハＷを載せるべき適宜のテーブル（図示していない。）の上面にウエーハＷの下面を接触させる。次いで、バルブ２８を閉じて水供給部１０からの水の供給を停止する。そして、吸引源２６を停止させてポーラス面ＰによるウエーハＷの吸引保持を解除し、テーブルの上面にウエーハＷを載せる。このようにしてウエーハ搬送機構２でウエーハＷを搬送する。 Next, the valve 28 of the flow path 30 is opened to supply water from the water supply unit 10 to the upper surface of the wafer W. Next, by appropriately rotating the rotating shaft 38 with a motor and appropriately raising and lowering it with an elevating means, the wafer W held by the wafer holding means 4 is conveyed, and an appropriate table (not shown) on which the wafer W should be placed is placed. The lower surface of the wafer W is brought into contact with the upper surface. Next, the valve 28 is closed to stop the water supply from the water supply unit 10. Then, the suction source 26 is stopped to release the suction holding of the wafer W by the porous surface P, and the wafer W is placed on the upper surface of the table. In this way, the wafer W is conveyed by the wafer transfer mechanism 2.
以上のとおりであり、図示の実施形態のウエーハ搬送機構２においては、吸引保持部８でウエーハＷの外周領域を吸引保持するのでウエーハＷを吸引保持する面積を小さくすることができると共に、吸引保持部８で吸引保持したウエーハＷに水を供給することによりウエーハＷに付着した研削屑が乾燥せず固化することがない。また、ウエーハ搬送機構２においては、吸引保持部８でウエーハＷを吸引保持する面積が小さいので、吸引保持部８のポーラス面ＰとウエーハＷの上面との間に研削屑が挟まれるおそれが低減する。したがって、ウエーハ搬送機構２によれば、ウエーハＷに付着した研削屑に起因してウエーハＷが損傷するのを防止することができる。 As described above, in the wafer transport mechanism 2 of the illustrated embodiment, since the suction holding portion 8 sucks and holds the outer peripheral region of the wafer W, the area for sucking and holding the wafer W can be reduced and the suction holding is performed. By supplying water to the wafer W sucked and held by the part 8, the grinding debris adhering to the wafer W does not dry and solidifies. Further, in the wafer transport mechanism 2, since the area for suction-holding the wafer W by the suction holding portion 8 is small, the possibility that grinding debris is caught between the porous surface P of the suction holding portion 8 and the upper surface of the wafer W is reduced. To do. Therefore, according to the wafer transfer mechanism 2, it is possible to prevent the wafer W from being damaged due to the grinding debris adhering to the wafer W.
次に、本発明に従って構成された研削装置の好適実施形態について図４を参照して説明する。全体を符号５０で示す研削装置は、複数のウエーハＷを収容したカセット５２が載置されるカセット載置部５４と、カセット載置部５４に載置されたカセット５２からウエーハＷを搬出および搬入するウエーハ搬出入手段５６と、ウエーハ搬出入手段５６によって搬出されたウエーハＷが仮置きされる仮置き手段５８と、仮置き手段５８に仮置きされたウエーハＷをチャックテーブル６０まで搬送する第一の搬送手段６２と、チャックテーブル６０に保持されたウエーハＷの上面を研削する研削手段６４と、研削済みのウエーハＷをチャックテーブル６０から搬出し洗浄手段６６まで搬送する第二の搬送手段とから少なくとも構成されており、第二の搬送手段は上述のウエーハ搬送機構２から構成されている。 Next, a preferred embodiment of the grinding apparatus configured according to the present invention will be described with reference to FIG. The grinding apparatus represented by reference numeral 50 carries out and carries in the wafer W from the cassette mounting portion 54 on which the cassette 52 accommodating the plurality of wafers W is mounted and the cassette 52 mounted on the cassette mounting portion 54. First, the wafer carry-in / out means 56, the temporary storage means 58 in which the wafer W carried out by the wafer carry-in / out means 56 is temporarily placed, and the wafer W temporarily placed in the temporary storage means 58 are conveyed to the chuck table 60. From the transport means 62, the grinding means 64 for grinding the upper surface of the wafer W held on the chuck table 60, and the second transport means for transporting the ground wafer W from the chuck table 60 to the cleaning means 66. At least it is configured, and the second transport means is composed of the wafer transport mechanism 2 described above.
図示の実施形態のカセット載置部５４は、研削加工前の複数のウエーハＷを収容した第一のカセット５２ａが載置される第一のカセット載置部５４ａと、研削加工後の複数のウエーハＷを収容する第二のカセット５２ｂが載置される第二のカセット載置部５４ｂとを有する。図４に示すとおり、研削装置５０は直方体状の基台６８を備えており、第一のカセット載置部５４ａおよび第二のカセット載置部５４ｂは、基台６８の上面に互いに間隔をおいて配置されている。 The cassette mounting portion 54 of the illustrated embodiment includes a first cassette mounting portion 54a on which a first cassette 52a accommodating a plurality of wafers W before grinding is mounted, and a plurality of wafers after grinding. It has a second cassette mounting portion 54b on which a second cassette 52b accommodating W is mounted. As shown in FIG. 4, the grinding device 50 includes a rectangular parallelepiped base 68, and the first cassette mounting portion 54a and the second cassette mounting portion 54b are spaced from each other on the upper surface of the base 68. Is placed.
ウエーハ搬出入手段５６は、第一のカセット載置部５４ａと第二のカセット載置部５４ｂとの間に配置されている。ウエーハ搬出入手段５６は、基台６８に支持された多関節アーム７０と、多関節アーム７０を作動させる電動またはエアー駆動のアクチュエータ（図示していない。）と、多関節アーム７０の先端に付設された保持片７２とを含む。片面に複数の吸引孔（図示していない。）が形成されている保持片７２は吸引源（図示していない。）に接続されている。 The wafer loading / unloading means 56 is arranged between the first cassette mounting portion 54a and the second cassette mounting portion 54b. The wafer loading / unloading means 56 is attached to the articulated arm 70 supported by the base 68, an electric or air-driven actuator (not shown) for operating the articulated arm 70, and the tip of the articulated arm 70. Includes the holding piece 72. A holding piece 72 having a plurality of suction holes (not shown) formed on one surface is connected to a suction source (not shown).
そして、ウエーハ搬出入手段５６においては、吸引源で保持片７２の片面に吸引力を生成することにより保持片７２の片面でウエーハＷを吸引保持し、また、アクチュエータで多関節アーム７０を作動させることにより、保持片７２の片面で吸引保持した研削加工前のウエーハＷを第一のカセット５２ａから仮置き手段５８に搬出し、かつ、保持片７２の片面で吸引保持した研削加工後のウエーハＷを洗浄手段６６から第二のカセット５２ｂへ搬入するようになっている。 Then, in the wafer loading / unloading means 56, the wafer W is sucked and held by one side of the holding piece 72 by generating a suction force on one side of the holding piece 72 by the suction source, and the articulated arm 70 is operated by the actuator. As a result, the wafer W before grinding that is sucked and held on one side of the holding piece 72 is carried out from the first cassette 52a to the temporary placing means 58, and the wafer W after grinding that is sucked and held on one side of the holding piece 72. Is carried from the cleaning means 66 to the second cassette 52b.
仮置き手段５８は、基台６８の上面において第一のカセット載置部５４ａに隣接して配置されている。仮置き手段５８は、ウエーハＷの直径よりも小さい円形の仮置きテーブル７４と、仮置きテーブル７４の径方向に沿って移動自在に仮置きテーブル７４の周囲に間隔をおいて配置された複数のピン７６と、複数のピン７６を仮置きテーブル７４の径方向に沿って同期して移動させるピン移動手段（図示していない。）とを有する。そして、仮置き手段５８においては、仮置きテーブル７４に仮置きされたウエーハＷの周縁に複数のピン７６を突き当てることにより、ウエーハＷの中心を仮置きテーブル７４の中心に整合させるようになっている。 The temporary placement means 58 is arranged adjacent to the first cassette mounting portion 54a on the upper surface of the base 68. The temporary storage means 58 includes a circular temporary storage table 74 smaller than the diameter of the wafer W, and a plurality of temporary storage tables 74 movably arranged around the temporary storage table 74 so as to be movable along the radial direction of the temporary storage table 74. It has a pin 76 and a pin moving means (not shown) for synchronously moving a plurality of pins 76 along the radial direction of the temporary placement table 74. Then, in the temporary storage means 58, the center of the wafer W is aligned with the center of the temporary storage table 74 by abutting the plurality of pins 76 on the peripheral edge of the wafer W temporarily placed on the temporary storage table 74. ing.
図４に示すとおり、基台６８の上面には、円形のターンテーブル７８が回転自在に設けられており、ターンテーブル７８は、基台６８に内蔵されたターンテーブル用モータ（図示していない。）で、上方から見て反時計回りに回転される。ターンテーブル７８の上面周縁側には、周方向に等間隔をおいて３個のチャックテーブル６０が回転自在に搭載されており、チャックテーブル６０は、ターンテーブル７８の下面に装着されたチャックテーブル用モータ（図示していない。）で上下方向に延びる軸線を中心として回転される。また、各チャックテーブル６０は、図４において、符号Ａで示す着脱位置と、符号Ｂで示す粗研削位置と、符号Ｃで示す仕上げ研削位置とにターンテーブル７８の回転によって順次位置づけられるようになっている。 As shown in FIG. 4, a circular turntable 78 is rotatably provided on the upper surface of the base 68, and the turntable 78 is a turntable motor (not shown) built in the base 68. ), It is rotated counterclockwise when viewed from above. Three chuck tables 60 are rotatably mounted on the peripheral edge side of the upper surface of the turntable 78 at equal intervals in the circumferential direction, and the chuck table 60 is for a chuck table mounted on the lower surface of the turntable 78. It is rotated around an axis extending in the vertical direction by a motor (not shown). Further, in FIG. 4, each chuck table 60 is sequentially positioned by the rotation of the turntable 78 at the attachment / detachment position indicated by reference numeral A, the rough grinding position indicated by reference numeral B, and the finish grinding position indicated by reference numeral C. ing.
各チャックテーブル６０の上端部分には、多孔質の円形状の吸着チャック８０が配置されている。吸着チャック８０には吸引源（図示していない。）およびエアー供給源（図示していない。）に選択的に接続されている。 A porous circular suction chuck 80 is arranged at the upper end of each chuck table 60. The suction chuck 80 is selectively connected to a suction source (not shown) and an air supply source (not shown).
そして、チャックテーブル６０においては、吸着チャック８０の上面に吸引源で吸引力を生成することにより、吸着チャック８０の上面に載せられたウエーハＷを吸引保持するようになっている。また、チャックテーブル６０においては、エアー供給源から吸着チャック８０にエアーを供給して吸着チャック８０の上面からエアーを噴出することにより、吸着チャック８０からウエーハＷを離間させるようになっている。 Then, in the chuck table 60, the wafer W mounted on the upper surface of the suction chuck 80 is sucked and held by generating a suction force on the upper surface of the suction chuck 80 with a suction source. Further, in the chuck table 60, the wafer W is separated from the suction chuck 80 by supplying air from the air supply source to the suction chuck 80 and ejecting air from the upper surface of the suction chuck 80.
第一の搬送手段６２は、仮置き手段５８とターンテーブル７８との間に配置されている。第一の搬送手段６２は、基台６８に回転自在かつ昇降自在に装着され基台６８の上面から上方に延びる回転軸８４と、回転軸８４の上端から実質上水平に延びるアーム８６と、アーム８６の先端下面に付設された吸着片８８と、回転軸８４を回転させる回転軸用モータ（図示していない。）と、回転軸８４を昇降させる電動シリンダ等の昇降手段（図示していない。）とを有する。下面に複数の吸引孔（図示していない。）が形成されている吸着片８８は吸引源（図示していない。）に接続されている。 The first transport means 62 is arranged between the temporary storage means 58 and the turntable 78. The first transport means 62 includes a rotating shaft 84 that is rotatably and vertically mounted on the base 68 and extends upward from the upper surface of the base 68, an arm 86 that extends substantially horizontally from the upper end of the rotating shaft 84, and an arm. A suction piece 88 attached to the lower surface of the tip of the 86, a rotary shaft motor for rotating the rotary shaft 84 (not shown), and an elevating means such as an electric cylinder for raising and lowering the rotary shaft 84 (not shown). ) And. The suction piece 88 having a plurality of suction holes (not shown) formed on the lower surface is connected to a suction source (not shown).
そして、第一の搬送手段６２においては、吸引源で吸着片８８の下面に吸引力を生成することにより、仮置き手段５８に仮置きされたウエーハＷを吸着片８８の下面で吸引保持し、また、昇降手段および回転軸用モータで回転軸８４を昇降および回転させることにより、吸着片８８の下面で吸引保持したウエーハＷを仮置き手段５８から、着脱位置Ａに位置づけられたチャックテーブル６０まで搬送するようになっている。 Then, in the first transport means 62, the waiha W temporarily placed on the temporary placement means 58 is sucked and held on the lower surface of the suction piece 88 by generating a suction force on the lower surface of the suction piece 88 with the suction source. Further, by raising and lowering and rotating the rotary shaft 84 with the lifting means and the rotary shaft motor, the wafer W sucked and held on the lower surface of the suction piece 88 is moved from the temporary placing means 58 to the chuck table 60 positioned at the attachment / detachment position A. It is designed to be transported.
図示の実施形態の研削手段６４は、基台６８の端部から上方に延びる装着壁９０と、いずれも装着壁９０の片面に昇降自在に装着された第一の昇降板９２および第二の昇降板９４と、第一の昇降板９２を昇降させる第一の昇降機構９６と、第二の昇降板９４を昇降させる第二の昇降機構９８とを含む。 The grinding means 64 of the illustrated embodiment includes a mounting wall 90 extending upward from the end of the base 68, a first lifting plate 92 and a second lifting plate 92, both of which are vertically mounted on one side of the mounting wall 90. The plate 94, a first elevating mechanism 96 for elevating and lowering the first elevating plate 92, and a second elevating mechanism 98 for elevating and lowering the second elevating plate 94 are included.
第一の昇降機構９６は、装着壁９０の片面に沿って上下方向に延びるボールねじ１００と、ボールねじ１００を回転させるモータ１０２とを有する。ボールねじ１００のナット部（図示していない。）は第一の昇降板９２に連結されている。そして、第一の昇降機構９６においては、ボールねじ１００によりモータ１０２の回転運動を直線運動に変換して第一の昇降板９２に伝達し、装着壁９０の片面に付設された案内レール９０ａに沿って第一の昇降板９２を昇降させるようになっている。なお、第二の昇降機構９８については、第一の昇降機構９６と同一の構成でよいので第一の昇降機構９６の構成と同一の符号を付し、説明を省略する。 The first elevating mechanism 96 includes a ball screw 100 extending in the vertical direction along one side of the mounting wall 90, and a motor 102 for rotating the ball screw 100. The nut portion (not shown) of the ball screw 100 is connected to the first elevating plate 92. Then, in the first elevating mechanism 96, the rotary motion of the motor 102 is converted into a linear motion by the ball screw 100 and transmitted to the first elevating plate 92 to the guide rail 90a attached to one side of the mounting wall 90. The first elevating plate 92 is moved up and down along the line. Since the second elevating mechanism 98 may have the same configuration as the first elevating mechanism 96, the same reference numerals as those of the first elevating mechanism 96 are given, and the description thereof will be omitted.
また、研削手段６４は、第一の昇降板９２の片面に装着された粗研削ユニット１０４と、第二の昇降板９４の片面に装着された仕上げ研削ユニット１０６とを含む。粗研削ユニット１０４は、第一の昇降板９２の片面から突出する突出壁１０８と、上下方向に延びる軸線を中心として回転自在に突出壁１０８に支持されたスピンドル１１０と、突出壁１０８の上面に搭載されスピンドル１１０を回転させるスピンドル用モータ１１２とを含む。スピンドル１１０の下端には円板状のホイールマウント１１４が固定され、ホイールマウント１１４の下面には粗研削用の研削砥石１１６が固定されている。なお、仕上げ研削ユニット１０６については、粗研削用の研削砥石１１６の砥粒よりも粒度が小さい砥粒から形成された仕上げ研削用の研削砥石１１８がホイールマウント１１４の下面に固定されているほかは、粗研削ユニット１０４と同一の構成でよいので粗研削ユニット１０４の構成と同一の符号を付し、説明を省略する。 Further, the grinding means 64 includes a rough grinding unit 104 mounted on one side of the first elevating plate 92 and a finish grinding unit 106 mounted on one side of the second elevating plate 94. The rough grinding unit 104 is provided on a protruding wall 108 protruding from one side of the first elevating plate 92, a spindle 110 rotatably supported by the protruding wall 108 about an axis extending in the vertical direction, and an upper surface of the protruding wall 108. Includes a spindle motor 112 that is mounted and rotates the spindle 110. A disk-shaped wheel mount 114 is fixed to the lower end of the spindle 110, and a grinding wheel 116 for rough grinding is fixed to the lower surface of the wheel mount 114. Regarding the finish grinding unit 106, a grinding wheel 118 for finish grinding formed from abrasive grains having a smaller grain size than the grinding wheels 116 for rough grinding is fixed to the lower surface of the wheel mount 114. Since the structure may be the same as that of the rough grinding unit 104, the same reference numerals as those of the rough grinding unit 104 will be added, and the description thereof will be omitted.
基台６８の上面には、着脱位置Ａに隣接して、洗浄水を噴射する洗浄水ノズル１２０が設けられている。そして、粗研削加工および仕上げ研削加工が施された後に着脱位置Ａに位置づけられたウエーハＷの上面（研削面）に向かって洗浄水ノズル１２０から洗浄水が噴射されることにより、ウエーハＷの上面が洗浄される。 On the upper surface of the base 68, a cleaning water nozzle 120 for injecting cleaning water is provided adjacent to the attachment / detachment position A. Then, after the rough grinding process and the finish grinding process are performed, the cleaning water is sprayed from the cleaning water nozzle 120 toward the upper surface (grinding surface) of the wafer W located at the attachment / detachment position A, so that the upper surface of the wafer W is formed. Is washed.
図４に示すとおり、洗浄手段６６は、基台６８の上面において第二のカセット載置部５４ｂに隣接して配置されている。洗浄手段６６は、回転自在に基台６８に装着された円形状のスピンナーテーブル１２２と、スピンナーテーブル１２２を回転させるスピンナーテーブル用モータ（図示していない。）と、スピンナーテーブル１２２に保持されたウエーハＷに洗浄水を噴射する洗浄水ノズル（図示していない。）と、スピンナーテーブル１２２に保持されたウエーハＷに乾燥エアーを噴射するエアーノズル（図示していない。）とを含む。スピンナーテーブル１２２の直径はウエーハＷの直径よりも小さい。また、スピンナーテーブル１２２の上端部分には、多孔質の円形状の吸着チャック１２４が配置され、吸着チャック１２４は吸引源（図示していない。）およびエアー供給源（図示していない。）に選択的に接続されている。 As shown in FIG. 4, the cleaning means 66 is arranged adjacent to the second cassette mounting portion 54b on the upper surface of the base 68. The cleaning means 66 includes a circular spinner table 122 rotatably mounted on the base 68, a spinner table motor (not shown) for rotating the spinner table 122, and a wafer held by the spinner table 122. It includes a washing water nozzle (not shown) that injects washing water into W, and an air nozzle (not shown) that injects dry air into the wafer W held on the spinner table 122. The diameter of the spinner table 122 is smaller than the diameter of the wafer W. Further, a porous circular suction chuck 124 is arranged at the upper end of the spinner table 122, and the suction chuck 124 is selected as a suction source (not shown) and an air supply source (not shown). Is connected.
そして、洗浄手段６６においては、吸引源で吸着チャック１２４の上面に吸引力を生成することによりスピンナーテーブル１２２でウエーハＷを吸引保持し、かつ、ウエーハＷを吸引保持したスピンナーテーブル１２２を回転させつつ、洗浄水ノズルから洗浄水を噴射してウエーハＷを洗浄すると共にエアーノズルから乾燥エアーを噴射してウエーハＷを乾燥させるようになっている。また、洗浄手段６６においては、ウエーハＷを洗浄した後、エアー供給源から吸着チャック１２４にエアーを供給して吸着チャック１２４の上面からエアーを噴出することにより、吸着チャック１２４からウエーハＷを離間させるようになっている。 Then, in the cleaning means 66, the spinner table 122 sucks and holds the wafer W by generating a suction force on the upper surface of the suction chuck 124 with the suction source, and while rotating the spinner table 122 that sucks and holds the wafer W. , Washing water is sprayed from the washing water nozzle to clean the wafer W, and dry air is sprayed from the air nozzle to dry the wafer W. Further, in the cleaning means 66, after cleaning the wafer W, air is supplied from the air supply source to the suction chuck 124 and air is ejected from the upper surface of the suction chuck 124 to separate the wafer W from the suction chuck 124. It has become like.
第二の搬送手段を構成するウエーハ搬送機構２は、洗浄手段６６とターンテーブル７８との間に配置されており、ウエーハ搬送機構２の移動手段６の回転軸３８が基台６８の上面に回転自在かつ昇降自在に装着されている。そして、ウエーハ搬送機構２においては、着脱位置Ａに位置づけられたチャックテーブル６０に保持されている研削済みのウエーハＷをチャックテーブル６０から搬出し、洗浄手段６６まで搬送するようになっている。 The wafer transport mechanism 2 constituting the second transport means is arranged between the cleaning means 66 and the turntable 78, and the rotating shaft 38 of the moving means 6 of the wafer transport mechanism 2 rotates on the upper surface of the base 68. It is installed freely and freely. Then, in the wafer transfer mechanism 2, the ground wafer W held by the chuck table 60 positioned at the attachment / detachment position A is carried out from the chuck table 60 and conveyed to the cleaning means 66.
また、図示の実施形態の研削装置５０においては、チャックテーブル６０と洗浄手段６６との間に第二の搬送手段（ウエーハ搬送機構２）によって搬送されるウエーハＷの下面を乾燥する乾燥手段１２６が配設されている。図示の実施形態の乾燥手段１２６は、基台６８の上面に形成された複数の噴射孔１２８と、各噴射孔１２８に接続されたエアー供給源（図示していない。）とを有し、各噴射孔１２８はウエーハ搬送機構２のウエーハ保持部４が通過する経路（ウエーハＷの搬送経路）の下方に位置している。そして、乾燥手段１２６においては、ウエーハ保持部４に保持された搬送中のウエーハＷの下面に乾燥エアーを噴射して、ウエーハＷの下面を乾燥するようになっている。 Further, in the grinding device 50 of the illustrated embodiment, the drying means 126 for drying the lower surface of the wafer W conveyed by the second conveying means (wafer conveying mechanism 2) between the chuck table 60 and the cleaning means 66 is provided. It is arranged. The drying means 126 of the illustrated embodiment has a plurality of injection holes 128 formed on the upper surface of the base 68, and an air supply source (not shown) connected to each injection hole 128. The injection hole 128 is located below the path through which the wafer holding portion 4 of the wafer transfer mechanism 2 passes (the transfer path of the wafer W). Then, in the drying means 126, drying air is injected onto the lower surface of the wafer W being conveyed, which is held by the wafer holding portion 4, to dry the lower surface of the wafer W.
次に、上述したとおりの研削装置５０を用いてウエーハＷを研削する方法について説明する。図示の実施形態では、まず、研削加工前の複数のウエーハＷを収容した第一のカセット５２ａを第一のカセット載置部５４ａに載置すると共に、研削加工後の複数のウエーハＷを収容する空の第二のカセット５２ｂを第二のカセット載置部５４ｂに載置するカセット載置工程を実施する。 Next, a method of grinding the wafer W using the grinding device 50 as described above will be described. In the illustrated embodiment, first, the first cassette 52a containing the plurality of wafers W before the grinding process is placed on the first cassette mounting portion 54a, and the plurality of wafers W after the grinding process are accommodated. A cassette mounting step of mounting an empty second cassette 52b on the second cassette mounting portion 54b is performed.
カセット載置工程を実施した後、第一のカセット５２ａからウエーハＷを搬出して仮置き手段５８に仮置きする仮置き工程を実施する。仮置き工程では、まず、ウエーハ搬出入手段５６の多関節アーム７０を作動させ、第一のカセット５２ａに収容されている研削加工前のウエーハＷに、複数の吸引孔が形成されている保持片７２の片面を密着させ、保持片７２でウエーハＷを吸引保持する。次いで、多関節アーム７０を作動させ、ウエーハＷを第一のカセット５２ａから搬出し、仮置き手段５８の仮置きテーブル７４の上面にウエーハＷの下面を接触させる。次いで、保持片７２によるウエーハＷの吸引保持を解除し、仮置きテーブル７４にウエーハＷを仮置きする。そして、仮置きテーブル７４に仮置きされたウエーハＷの周縁に複数のピン７６を突き当てることにより、ウエーハＷの中心を仮置きテーブル７４の中心に整合させる。 After carrying out the cassette mounting step, the temporary placing step of carrying out the wafer W from the first cassette 52a and temporarily placing it in the temporary placing means 58 is carried out. In the temporary placement step, first, the articulated arm 70 of the wafer loading / unloading means 56 is operated, and a holding piece in which a plurality of suction holes are formed in the wafer W before grinding, which is housed in the first cassette 52a. One side of 72 is brought into close contact with each other, and the wafer W is sucked and held by the holding piece 72. Next, the articulated arm 70 is operated to carry out the wafer W from the first cassette 52a, and bring the lower surface of the wafer W into contact with the upper surface of the temporary storage table 74 of the temporary storage means 58. Next, the suction holding of the wafer W by the holding piece 72 is released, and the wafer W is temporarily placed on the temporary storage table 74. Then, by abutting a plurality of pins 76 against the peripheral edge of the wafer W temporarily placed on the temporary storage table 74, the center of the wafer W is aligned with the center of the temporary storage table 74.
仮置き工程を実施した後、仮置き手段５８に仮置きされたウエーハＷをチャックテーブル６０まで搬送する第一の搬送工程を実施する。第一の搬送工程では、まず、第一の搬送手段６２の回転軸８４を回転させ、仮置き手段５８に仮置きされたウエーハＷの上方に第一の搬送手段６２の吸着片８８を位置づける。次いで、吸着片８８を下降させウエーハＷの上面に吸着片８８の下面を密着させると共に、吸着片８８の下面でウエーハＷを吸引保持する。次いで、回転軸８４を昇降および回転させ、吸着片８８で吸引保持したウエーハＷを仮置き手段５８から、着脱位置Ａに位置づけられたチャックテーブル６０まで搬送する。 After carrying out the temporary placement step, the first transfer step of transporting the wafer W temporarily placed on the temporary placement means 58 to the chuck table 60 is carried out. In the first transfer step, first, the rotation shaft 84 of the first transfer means 62 is rotated, and the suction piece 88 of the first transfer means 62 is positioned above the wafer W temporarily placed on the temporary placement means 58. Next, the suction piece 88 is lowered to bring the lower surface of the suction piece 88 into close contact with the upper surface of the wafer W, and the wafer W is sucked and held by the lower surface of the suction piece 88. Next, the rotating shaft 84 is moved up and down and rotated, and the wafer W sucked and held by the suction piece 88 is conveyed from the temporary placing means 58 to the chuck table 60 positioned at the attachment / detachment position A.
第一の搬送工程を実施した後、チャックテーブル６０に保持されたウエーハＷの上面を研削する研削工程を実施する。研削工程では、まず、チャックテーブル６０でウエーハＷを吸引保持する。次いで、ターンテーブル７８を１２０度回転させ、ウエーハＷを吸引保持しているチャックテーブル６０を粗研削位置Ｂに位置づける。次いで、上方からみて反時計回りに所定の回転速度でチャックテーブル６０を回転させると共に、上方からみて反時計回りに所定の回転速度でスピンドル１１０を回転させる。次いで、第一の昇降機構９６でスピンドル１１０を下降させ、研削領域に研削水を供給しながら粗研削用の研削砥石１１６をウエーハＷの上面に接触させる。その後、所定の研削送り速度でスピンドル１１０を下降させる。これによって、ウエーハＷの上面に粗研削加工を施すことができる。 After carrying out the first transfer step, a grinding step of grinding the upper surface of the wafer W held on the chuck table 60 is carried out. In the grinding process, first, the wafer W is sucked and held by the chuck table 60. Next, the turntable 78 is rotated by 120 degrees, and the chuck table 60 that sucks and holds the wafer W is positioned at the rough grinding position B. Next, the chuck table 60 is rotated counterclockwise when viewed from above at a predetermined rotational speed, and the spindle 110 is rotated counterclockwise when viewed from above. Next, the spindle 110 is lowered by the first elevating mechanism 96, and the grinding wheel 116 for rough grinding is brought into contact with the upper surface of the wafer W while supplying grinding water to the grinding region. After that, the spindle 110 is lowered at a predetermined grinding feed rate. As a result, the upper surface of the wafer W can be roughly ground.
次いで、ターンテーブル７８を１２０度回転させ、ウエーハＷを吸引保持しているチャックテーブル６０を仕上げ研削位置Ｃに位置づける。次いで、粗研削加工と同様に、上方からみて反時計回りに所定の回転速度でチャックテーブル６０を回転させると共に、上方からみて反時計回りに所定の回転速度でスピンドル１１０を回転させる。次いで、第二の昇降機構９８でスピンドル１１０を下降させ、研削領域に研削水を供給しながら仕上げ研削用の研削砥石１１８をウエーハＷの上面に接触させる。その後、所定の研削送り速度でスピンドル１１０を下降させる。これによって、ウエーハＷの上面に仕上げ研削加工を施すことができる。仕上げ研削加工を施した後、ターンテーブル７８を１２０度回転させてウエーハＷを吸引保持しているチャックテーブル６０を着脱位置Ａに位置づける。次いで、ウエーハＷの上面（研削面）に向かって洗浄水ノズル１２０から洗浄水を噴射し、ウエーハＷの上面を洗浄する。 Next, the turntable 78 is rotated by 120 degrees, and the chuck table 60 that sucks and holds the wafer W is positioned at the finish grinding position C. Next, similarly to the rough grinding process, the chuck table 60 is rotated counterclockwise when viewed from above at a predetermined rotational speed, and the spindle 110 is rotated counterclockwise when viewed from above. Next, the spindle 110 is lowered by the second elevating mechanism 98, and the grinding wheel 118 for finish grinding is brought into contact with the upper surface of the wafer W while supplying grinding water to the grinding region. After that, the spindle 110 is lowered at a predetermined grinding feed rate. As a result, the upper surface of the wafer W can be subjected to finish grinding. After the finish grinding process is performed, the turntable 78 is rotated 120 degrees to position the chuck table 60 that sucks and holds the wafer W at the attachment / detachment position A. Next, the cleaning water is sprayed from the cleaning water nozzle 120 toward the upper surface (grinding surface) of the wafer W to clean the upper surface of the wafer W.
研削工程を実施した後、研削済みのウエーハＷをチャックテーブル６０から搬出し洗浄手段６６まで搬送する第二の搬送工程を実施する。第二の搬送工程では、まず、第二の搬送手段を構成するウエーハ搬送機構２の移動手段６の回転軸３８を回転させ、着脱位置Ａに位置づけられたチャックテーブル６０に置かれているウエーハＷの外周領域の上方に、ウエーハ保持手段４の吸引保持部８のポーラス面Ｐを位置づける。次いで、吸引保持部８を下降させ、ウエーハＷの上面の外周領域に吸引保持部８のポーラス面Ｐを密着させ、ウエーハＷを吸引保持すると共にウエーハＷの上面に水供給部１０から水を供給する。次いで、チャックテーブル６０によるウエーハＷの吸引保持を解除する。 After performing the grinding step, a second transporting step of transporting the ground wafer W from the chuck table 60 to the unloading cleaning means 66 is performed. In the second transfer step, first, the rotary shaft 38 of the moving means 6 of the wafer transfer mechanism 2 constituting the second transfer means is rotated, and the wafer W placed on the chuck table 60 positioned at the attachment / detachment position A. The porous surface P of the suction holding portion 8 of the wafer holding means 4 is positioned above the outer peripheral region of the wafer. Next, the suction holding portion 8 is lowered, the porous surface P of the suction holding portion 8 is brought into close contact with the outer peripheral region of the upper surface of the wafer W, the wafer W is sucked and held, and water is supplied from the water supply portion 10 to the upper surface of the wafer W. To do. Next, the suction holding of the wafer W by the chuck table 60 is released.
次いで、吸着チャック８０からエアーおよび水の二流体を噴出することによりチャックテーブル６０からウエーハＷを離間させながらウエーハ保持手段４を上昇させ、ウエーハ保持手段４で保持したウエーハＷをチャックテーブル６０から洗浄手段６６のスピンナーテーブル１２２まで搬送する。ここで、ウエーハＷを搬送している際、乾燥手段１２６の各噴射孔１２８から乾燥エアーを噴射し、搬送中のウエーハＷの下面を乾燥させる。そして、スピンナーテーブル１２２の上面にウエーハＷの下面を接触させた後、吸引保持部８のポーラス面ＰによるウエーハＷの吸引保持を解除する。 Next, the wafer holding means 4 is raised while separating the wafer W from the chuck table 60 by ejecting two fluids of air and water from the suction chuck 80, and the wafer W held by the wafer holding means 4 is washed from the chuck table 60. It is conveyed to the spinner table 122 of the means 66. Here, when the wafer W is being conveyed, drying air is injected from each injection hole 128 of the drying means 126 to dry the lower surface of the wafer W being conveyed. Then, after the lower surface of the wafer W is brought into contact with the upper surface of the spinner table 122, the suction holding of the wafer W by the porous surface P of the suction holding portion 8 is released.
第二の搬送工程を実施した後、研削済みのウエーハＷを洗浄する洗浄工程を実施する。洗浄工程では、まず、スピンナーテーブル１２２でウエーハＷを吸引保持する。次いで、スピンナーテーブル１２２を回転させながら、洗浄水ノズルから洗浄水を噴射してウエーハＷを洗浄する。これによって、ウエーハＷに付着している研削屑および研削水等を除去してウエーハＷを洗浄することができると共に、スピンナーテーブル１２２の回転による遠心力でウエーハＷから洗浄水を除去することができる。次いで、スピンナーテーブル１２２を回転させながら、エアーノズルから乾燥エアーを噴射する。これによって、スピンナーテーブル１２２の回転による遠心力では除去しきれなかった洗浄水をウエーハＷから除去してウエーハＷを乾燥させることができる。そして、スピンナーテーブル１２２によるウエーハＷの吸引保持を解除する。 After carrying out the second transfer step, a washing step of washing the ground wafer W is carried out. In the cleaning step, first, the wafer W is sucked and held by the spinner table 122. Next, while rotating the spinner table 122, cleaning water is sprayed from the cleaning water nozzle to clean the wafer W. As a result, the grinding debris and grinding water adhering to the wafer W can be removed to clean the wafer W, and the cleaning water can be removed from the wafer W by the centrifugal force generated by the rotation of the spinner table 122. .. Next, while rotating the spinner table 122, dry air is injected from the air nozzle. As a result, the washing water that could not be completely removed by the centrifugal force due to the rotation of the spinner table 122 can be removed from the wafer W and the wafer W can be dried. Then, the suction holding of the wafer W by the spinner table 122 is released.
洗浄工程を実施した後、洗浄済みのウエーハＷを洗浄手段６６から搬出し第二のカセット５２ｂに搬入するカセット搬入工程を実施する。カセット搬入工程では、まず、ウエーハ搬出入手段５６の多関節アーム７０を作動させ、スピンナーテーブル１２２に置かれているウエーハＷに保持片７２の片面を密着させる。次いで、スピンナーテーブル１２２の吸着チャック１２４の上面からエアーを噴出することにより吸着チャック１２４からウエーハＷを離間させると共に、保持片７２でウエーハＷを吸引保持する。次いで、多関節アーム７０を作動させ、洗浄済みのウエーハＷを洗浄手段６６から搬出して、第二のカセット５２ｂに搬入する。そして、保持片７２によるウエーハＷの吸引保持を解除する。 After carrying out the washing step, a cassette carrying-in step of carrying out the washed wafer W from the washing means 66 and carrying it into the second cassette 52b is carried out. In the cassette loading / unloading step, first, the articulated arm 70 of the wafer loading / unloading means 56 is operated to bring one side of the holding piece 72 into close contact with the wafer W placed on the spinner table 122. Next, the wafer W is separated from the suction chuck 124 by ejecting air from the upper surface of the suction chuck 124 of the spinner table 122, and the wafer W is sucked and held by the holding piece 72. Next, the articulated arm 70 is operated to carry out the washed wafer W from the washing means 66 and carry it into the second cassette 52b. Then, the suction holding of the wafer W by the holding piece 72 is released.
以上のとおりであり、図示の実施形態の研削装置５０においては、研削済みのウエーハＷをチャックテーブル６０から搬出し洗浄手段６６まで搬送する第二の搬送手段がウエーハ搬送機構２から構成されており、吸引保持部８でウエーハＷの外周領域を吸引保持するのでウエーハＷを吸引保持する面積を小さくすることができると共に、吸引保持部８で吸引保持したウエーハＷに水を供給することによりウエーハＷに付着した研削屑が乾燥せず固化することがない。また、研削装置５０においては、吸引保持部８でウエーハＷを吸引保持する面積が小さいので、吸引保持部８のポーラス面ＰとウエーハＷの上面との間に研削屑が挟まれるおそれが低減する。したがって、研削装置５０によれば、ウエーハＷに付着した研削屑に起因してウエーハＷが損傷するのを防止することができる。 As described above, in the grinding apparatus 50 of the illustrated embodiment, the wafer transport mechanism 2 is configured as a second transport means for transporting the ground wafer W from the chuck table 60 to the carry-out cleaning means 66. Since the outer peripheral region of the wafer W is suction-held by the suction holding portion 8, the area for suction-holding the wafer W can be reduced, and water is supplied to the wafer W suction-held by the suction holding portion 8 to supply the wafer W. The grinding debris adhering to the wafer does not dry and solidify. Further, in the grinding apparatus 50, since the area where the suction holding portion 8 sucks and holds the wafer W is small, the possibility that grinding debris is caught between the porous surface P of the suction holding portion 8 and the upper surface of the wafer W is reduced. .. Therefore, according to the grinding device 50, it is possible to prevent the wafer W from being damaged due to the grinding debris adhering to the wafer W.
２：ウエーハ搬送機構
４：ウエーハ保持手段
６：移動手段
８：吸引保持部
Ｐ：ポーラス面
１０：水供給部
１２：セグメント
１８：環状壁
Ｗ：ウエーハ
５０：研削装置
５２：カセット
５２ａ：第一のカセット
５２ｂ：第二のカセット
５４：カセット載置部
５４ａ：第一のカセット載置部
５４ｂ：第二のカセット載置部
５６：ウエーハ搬出入手段
５８：仮置き手段
６０：チャックテーブル
６２：第一の搬送手段
６４：研削手段
６６：洗浄手段
１２６：乾燥手段
2: Wafer transport mechanism 4: Wafer holding means 6: Moving means 8: Suction holding part P: Porous surface 10: Water supply part 12: Segment 18: Circular wall W: Wafer 50: Grinding device 52: Cassette 52a: First Cassette 52b: Second cassette 54: Cassette mounting part 54a: First cassette mounting part 54b: Second cassette mounting part 56: Wafer loading / unloading means 58: Temporary placing means 60: Chuck table 62: First Transport means 64: Grinding means 66: Cleaning means 126: Drying means
Claims (5)
ウエーハを保持するウエーハ保持手段と、該ウエーハ保持手段を移動する移動手段とを備え、
該ウエーハ保持手段は、ウエーハの外周領域を吸引保持するポーラス面を備えた吸引保持部と、該吸引保持部の内側に配設され水を供給する水供給部とを含むウエーハ搬送機構。 It is a wafer transport mechanism that transports wafers.
A wafer holding means for holding a wafer and a moving means for moving the wafer holding means are provided.
The wafer holding means is a wafer transport mechanism including a suction holding portion provided with a porous surface for sucking and holding an outer peripheral region of the wafer, and a water supply portion disposed inside the suction holding portion to supply water.
から少なくとも構成された研削装置であって、
該第二の搬送手段は、請求項１または２記載のウエーハ搬送機構から構成される研削装置。 A cassette mounting unit on which cassettes accommodating a plurality of wafers are placed, a wafer loading / unloading means for loading and unloading a wafer from a cassette mounted on the cassette mounting section, and a wafer loading / unloading means. Temporary storage means on which the wafer is temporarily placed, first transport means for transporting the wafer temporarily placed on the temporary placement means to the chuck table, and grinding means for grinding the upper surface of the wafer held on the chuck table. A second transport means for transporting the ground wafer from the chuck table to the carry-out cleaning means, and
At least a grinding device constructed from
The second transport means is a grinding apparatus including the wafer transport mechanism according to claim 1 or 2.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2019129155A JP7358096B2 (en) | 2019-07-11 | 2019-07-11 | Wafer transport mechanism and grinding equipment |
| KR1020200073370A KR20210007839A (en) | 2019-07-11 | 2020-06-17 | Wafer transfer mechanism and grinding apparatus |
| TW109121683A TW202105578A (en) | 2019-07-11 | 2020-06-24 | Wafer transportation mechanism and polishing device capable of preventing damages to a wafer due to polishing debris attached to the wafer |
| CN202010630407.8A CN112276792B (en) | 2019-07-11 | 2020-07-03 | Wafer conveying mechanism and grinding device |
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| JP2019129155A JP7358096B2 (en) | 2019-07-11 | 2019-07-11 | Wafer transport mechanism and grinding equipment |
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| KR (1) | KR20210007839A (en) |
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| CN112276792B (en) | 2024-03-12 |
| KR20210007839A (en) | 2021-01-20 |
| CN112276792A (en) | 2021-01-29 |
| JP7358096B2 (en) | 2023-10-10 |
| TW202105578A (en) | 2021-02-01 |
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