TW202036159A - 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法 - Google Patents
感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法 Download PDFInfo
- Publication number
- TW202036159A TW202036159A TW108147942A TW108147942A TW202036159A TW 202036159 A TW202036159 A TW 202036159A TW 108147942 A TW108147942 A TW 108147942A TW 108147942 A TW108147942 A TW 108147942A TW 202036159 A TW202036159 A TW 202036159A
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- radiation
- compound
- formula
- resin composition
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C205/00—Compounds containing nitro groups bound to a carbon skeleton
- C07C205/44—Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by —CHO groups
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/03—Ethers having all ether-oxygen atoms bound to acyclic carbon atoms
- C07C43/04—Saturated ethers
- C07C43/10—Saturated ethers of polyhydroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/03—Ethers having all ether-oxygen atoms bound to acyclic carbon atoms
- C07C43/04—Saturated ethers
- C07C43/10—Saturated ethers of polyhydroxy compounds
- C07C43/11—Polyethers containing —O—(C—C—O—)n units with ≤ 2 n≤ 10
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/03—Ethers having all ether-oxygen atoms bound to acyclic carbon atoms
- C07C43/04—Saturated ethers
- C07C43/13—Saturated ethers containing hydroxy or O-metal groups
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C47/00—Compounds having —CHO groups
- C07C47/02—Saturated compounds having —CHO groups bound to acyclic carbon atoms or to hydrogen
- C07C47/04—Formaldehyde
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C47/00—Compounds having —CHO groups
- C07C47/02—Saturated compounds having —CHO groups bound to acyclic carbon atoms or to hydrogen
- C07C47/06—Acetaldehyde
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C47/00—Compounds having —CHO groups
- C07C47/02—Saturated compounds having —CHO groups bound to acyclic carbon atoms or to hydrogen
- C07C47/12—Saturated compounds having —CHO groups bound to acyclic carbon atoms or to hydrogen containing more than one —CHO group
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C47/00—Compounds having —CHO groups
- C07C47/02—Saturated compounds having —CHO groups bound to acyclic carbon atoms or to hydrogen
- C07C47/14—Saturated compounds having —CHO groups bound to acyclic carbon atoms or to hydrogen containing halogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C47/00—Compounds having —CHO groups
- C07C47/20—Unsaturated compounds having —CHO groups bound to acyclic carbon atoms
- C07C47/21—Unsaturated compounds having —CHO groups bound to acyclic carbon atoms with only carbon-to-carbon double bonds as unsaturation
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/02—Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen
- C07C69/12—Acetic acid esters
- C07C69/16—Acetic acid esters of dihydroxylic compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D303/00—Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
- C07D303/02—Compounds containing oxirane rings
- C07D303/48—Compounds containing oxirane rings with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, directly attached to ring carbon atoms, e.g. ester or nitrile radicals
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
- C07D307/02—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings
- C07D307/34—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members
- C07D307/56—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D307/68—Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
- C07D335/02—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018248645 | 2018-12-28 | ||
JP2018-248645 | 2018-12-28 | ||
JP2019-138319 | 2019-07-26 | ||
JP2019138319 | 2019-07-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202036159A true TW202036159A (zh) | 2020-10-01 |
Family
ID=71129419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108147942A TW202036159A (zh) | 2018-12-28 | 2019-12-26 | 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP7295886B2 (fr) |
KR (1) | KR102603416B1 (fr) |
CN (1) | CN113260604B (fr) |
TW (1) | TW202036159A (fr) |
WO (1) | WO2020137921A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7542653B2 (ja) | 2020-12-21 | 2024-08-30 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
WO2023127692A1 (fr) * | 2021-12-28 | 2023-07-06 | 東京応化工業株式会社 | Composition de réserve et procédé de formation de motif de réserve |
WO2024004790A1 (fr) * | 2022-06-29 | 2024-01-04 | 富士フイルム株式会社 | Composition de résine sensible aux rayons actiniques ou à un rayonnement, film sensible aux rayons actiniques ou à un rayonnement, procédé de formation de motif, et procédé de fabrication de dispositif électronique |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004085900A (ja) * | 2002-08-27 | 2004-03-18 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP2007197613A (ja) * | 2006-01-27 | 2007-08-09 | Jsr Corp | 感放射線性樹脂組成物 |
JP2009288344A (ja) * | 2008-05-27 | 2009-12-10 | Fujifilm Corp | ポジ型レジスト組成物、及び該組成物を用いたパターン形成方法 |
JP5464131B2 (ja) * | 2009-12-02 | 2014-04-09 | 信越化学工業株式会社 | 化学増幅レジスト材料並びにこれを用いたパターン形成方法 |
JP6292059B2 (ja) | 2013-08-13 | 2018-03-14 | Jsr株式会社 | 基板の加工方法 |
TWI693470B (zh) * | 2015-06-30 | 2020-05-11 | 日商富士軟片股份有限公司 | 感光性樹脂組成物、硬化膜的製造方法、硬化膜及液晶顯示裝置 |
JP6688811B2 (ja) * | 2015-12-25 | 2020-04-28 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜の生産方法、パターン形成方法、及び、電子デバイスの製造方法 |
TWI796958B (zh) * | 2016-09-30 | 2023-03-21 | 日商富士軟片股份有限公司 | 半導體晶片的製造方法、套組及圖案的形成方法 |
JP7097873B2 (ja) * | 2017-03-17 | 2022-07-08 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
-
2019
- 2019-12-20 CN CN201980086223.5A patent/CN113260604B/zh active Active
- 2019-12-20 KR KR1020217020034A patent/KR102603416B1/ko active IP Right Grant
- 2019-12-20 JP JP2020563225A patent/JP7295886B2/ja active Active
- 2019-12-20 WO PCT/JP2019/050208 patent/WO2020137921A1/fr active Application Filing
- 2019-12-26 TW TW108147942A patent/TW202036159A/zh unknown
-
2023
- 2023-03-10 JP JP2023038053A patent/JP2023082000A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP7295886B2 (ja) | 2023-06-21 |
WO2020137921A1 (fr) | 2020-07-02 |
CN113260604B (zh) | 2023-10-17 |
JP2023082000A (ja) | 2023-06-13 |
CN113260604A (zh) | 2021-08-13 |
KR20210099049A (ko) | 2021-08-11 |
JPWO2020137921A1 (ja) | 2021-10-21 |
KR102603416B1 (ko) | 2023-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI825018B (zh) | 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法 | |
TW202300537A (zh) | 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法 | |
WO2019123895A1 (fr) | Composition de résine sensible à la lumière active ou au rayonnement, film de réserve, procédé de formation de motif et procédé de fabrication d'un dispositif électronique et composé | |
TWI756463B (zh) | 感光性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法 | |
TW202036159A (zh) | 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法 | |
TWI727142B (zh) | 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法及電子器件的製造方法 | |
TW202131099A (zh) | 感光化射線性或感放射線性樹脂組成物、圖案形成方法、及電子器件的製造方法 | |
TW201914990A (zh) | 感光性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法 | |
TWI818966B (zh) | 感光性樹脂組成物及其製造方法、抗蝕劑膜、圖案形成方法以及電子器件的製造方法 | |
WO2020261885A1 (fr) | Composition de résine sensible aux rayons actiniques ou sensible à un rayonnement, procédé de formation de motif, film de réserve, et procédé de fabrication d'un dispositif électronique | |
JP7280957B2 (ja) | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法 | |
JP7239611B2 (ja) | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 | |
TWI779159B (zh) | 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、以及電子元件的製造方法 | |
TW202132374A (zh) | 圖案形成方法、電子器件的製造方法、及感光化射線性或感放射線性樹脂組成物 | |
TW202028266A (zh) | 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子裝置之製造方法 | |
TW202011114A (zh) | 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、電子器件之製造方法 | |
TW202009603A (zh) | 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法、電子元件的製造方法 | |
TWI849210B (zh) | 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、及電子元件的製造方法 | |
JP7309888B2 (ja) | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法 | |
JP7356568B2 (ja) | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法 | |
JP7039715B2 (ja) | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 | |
JP7344956B2 (ja) | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法 | |
TW202112843A (zh) | 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、及電子元件的製造方法 | |
TW202011113A (zh) | 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、電子器件之製造方法 |