TW202028448A - Detergent composition for removing flux residues - Google Patents
Detergent composition for removing flux residues Download PDFInfo
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- TW202028448A TW202028448A TW108144542A TW108144542A TW202028448A TW 202028448 A TW202028448 A TW 202028448A TW 108144542 A TW108144542 A TW 108144542A TW 108144542 A TW108144542 A TW 108144542A TW 202028448 A TW202028448 A TW 202028448A
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- 239000000203 mixture Substances 0.000 title claims abstract description 160
- 239000003599 detergent Substances 0.000 title claims abstract description 120
- 230000004907 flux Effects 0.000 title claims abstract description 114
- 150000001412 amines Chemical class 0.000 claims abstract description 30
- 239000002904 solvent Substances 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims description 60
- 229910000679 solder Inorganic materials 0.000 claims description 46
- 238000004519 manufacturing process Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 33
- -1 tetrahydrofuryl methyl Chemical group 0.000 claims description 31
- 125000000217 alkyl group Chemical group 0.000 claims description 30
- 125000004432 carbon atom Chemical group C* 0.000 claims description 27
- 239000004615 ingredient Substances 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 23
- 239000012459 cleaning agent Substances 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 23
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 20
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 20
- 239000002253 acid Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 16
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical group CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 claims description 13
- 238000005476 soldering Methods 0.000 claims description 12
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical group CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 claims description 11
- GVNHOISKXMSMPX-UHFFFAOYSA-N 2-[butyl(2-hydroxyethyl)amino]ethanol Chemical group CCCCN(CCO)CCO GVNHOISKXMSMPX-UHFFFAOYSA-N 0.000 claims description 10
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical group CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 10
- 229940043276 diisopropanolamine Drugs 0.000 claims description 10
- IWSZDQRGNFLMJS-UHFFFAOYSA-N 2-(dibutylamino)ethanol Chemical group CCCCN(CCO)CCCC IWSZDQRGNFLMJS-UHFFFAOYSA-N 0.000 claims description 9
- SVNWKKJQEFIURY-UHFFFAOYSA-N 2-methyl-1-(2-methylpropyl)imidazole Chemical compound CC(C)CN1C=CN=C1C SVNWKKJQEFIURY-UHFFFAOYSA-N 0.000 claims description 9
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 9
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 8
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- 125000003718 tetrahydrofuranyl group Chemical group 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 7
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 claims description 6
- 125000002947 alkylene group Chemical group 0.000 claims description 6
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 5
- 125000002541 furyl group Chemical group 0.000 claims description 5
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 29
- 239000007788 liquid Substances 0.000 abstract description 23
- 238000002156 mixing Methods 0.000 abstract description 11
- XQRLCLUYWUNEEH-UHFFFAOYSA-N diphosphonic acid Chemical compound OP(=O)OP(O)=O XQRLCLUYWUNEEH-UHFFFAOYSA-N 0.000 abstract description 6
- 150000003839 salts Chemical class 0.000 description 20
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 12
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 12
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 10
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 9
- 239000000543 intermediate Substances 0.000 description 9
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 9
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 description 8
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 8
- 229910001887 tin oxide Inorganic materials 0.000 description 8
- 238000003756 stirring Methods 0.000 description 7
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- MBKDYNNUVRNNRF-UHFFFAOYSA-N medronic acid Chemical compound OP(O)(=O)CP(O)(O)=O MBKDYNNUVRNNRF-UHFFFAOYSA-N 0.000 description 6
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 6
- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 5
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 5
- 230000003749 cleanliness Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- NCZPCONIKBICGS-UHFFFAOYSA-N 3-(2-ethylhexoxy)propane-1,2-diol Chemical compound CCCCC(CC)COCC(O)CO NCZPCONIKBICGS-UHFFFAOYSA-N 0.000 description 4
- 150000001414 amino alcohols Chemical class 0.000 description 4
- 239000012964 benzotriazole Substances 0.000 description 4
- 235000019445 benzyl alcohol Nutrition 0.000 description 4
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 2
- JMVIVASFFKKFQK-UHFFFAOYSA-N 1-phenylpyrrolidin-2-one Chemical compound O=C1CCCN1C1=CC=CC=C1 JMVIVASFFKKFQK-UHFFFAOYSA-N 0.000 description 2
- BBBUAWSVILPJLL-UHFFFAOYSA-N 2-(2-ethylhexoxymethyl)oxirane Chemical compound CCCCC(CC)COCC1CO1 BBBUAWSVILPJLL-UHFFFAOYSA-N 0.000 description 2
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 2
- ZUAURMBNZUCEAF-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethanol Chemical compound OCCOCCOC1=CC=CC=C1 ZUAURMBNZUCEAF-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 2
- WRMNZCZEMHIOCP-UHFFFAOYSA-N 2-phenylethanol Chemical compound OCCC1=CC=CC=C1 WRMNZCZEMHIOCP-UHFFFAOYSA-N 0.000 description 2
- IOGISYQVOGVIEU-UHFFFAOYSA-N 4-hydroxypyrrolidin-2-one Chemical compound OC1CNC(=O)C1 IOGISYQVOGVIEU-UHFFFAOYSA-N 0.000 description 2
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000005639 Lauric acid Substances 0.000 description 2
- WPPOGHDFAVQKLN-UHFFFAOYSA-N N-Octyl-2-pyrrolidone Chemical compound CCCCCCCCN1CCCC1=O WPPOGHDFAVQKLN-UHFFFAOYSA-N 0.000 description 2
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- 239000003242 anti bacterial agent Substances 0.000 description 2
- 230000000844 anti-bacterial effect Effects 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 239000003899 bactericide agent Substances 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000006184 cosolvent Substances 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical class C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- XPFVYQJUAUNWIW-UHFFFAOYSA-N furfuryl alcohol Chemical compound OCC1=CC=CO1 XPFVYQJUAUNWIW-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 description 2
- 229960005323 phenoxyethanol Drugs 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000003755 preservative agent Substances 0.000 description 2
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 2
- 238000001223 reverse osmosis Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- RWRDLPDLKQPQOW-UHFFFAOYSA-N tetrahydropyrrole Substances C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 2
- 239000002562 thickening agent Substances 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- DSESGJJGBBAHNW-UHFFFAOYSA-N (e)-[amino(anilino)methylidene]-phenylazanium;bromide Chemical compound Br.C=1C=CC=CC=1N=C(N)NC1=CC=CC=C1 DSESGJJGBBAHNW-UHFFFAOYSA-N 0.000 description 1
- CVDGNRZPDAXOQO-UHFFFAOYSA-N 1-(3-hydroxypropyl)pyrrolidin-2-one Chemical compound OCCCN1CCCC1=O CVDGNRZPDAXOQO-UHFFFAOYSA-N 0.000 description 1
- KTSVVTQTKRGWGU-UHFFFAOYSA-N 1-[2-[2-(2-butoxyethoxy)ethoxy]ethoxy]butane Chemical compound CCCCOCCOCCOCCOCCCC KTSVVTQTKRGWGU-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- BOZRBIJGLJJPRF-UHFFFAOYSA-N 2,2,3,3,4,4,4-heptafluorobutanenitrile Chemical compound FC(F)(F)C(F)(F)C(F)(F)C#N BOZRBIJGLJJPRF-UHFFFAOYSA-N 0.000 description 1
- ZOQVDXYAPXAFRW-UHFFFAOYSA-N 2,5-diethyl-1h-imidazole Chemical compound CCC1=CNC(CC)=N1 ZOQVDXYAPXAFRW-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- FOUZISDNESEYLX-UHFFFAOYSA-N 2-(2-hydroxyethylazaniumyl)acetate Chemical compound OCCNCC(O)=O FOUZISDNESEYLX-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- IDHKBOHEOJFNNS-UHFFFAOYSA-N 2-[2-(2-phenoxyethoxy)ethoxy]ethanol Chemical compound OCCOCCOCCOC1=CC=CC=C1 IDHKBOHEOJFNNS-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 description 1
- RCGMLWDMQYVICI-UHFFFAOYSA-N 2-methyl-5-(2-methylpropyl)-1h-imidazole Chemical compound CC(C)CC1=CN=C(C)N1 RCGMLWDMQYVICI-UHFFFAOYSA-N 0.000 description 1
- XYJLPCAKKYOLGU-UHFFFAOYSA-N 2-phosphonoethylphosphonic acid Chemical compound OP(O)(=O)CCP(O)(O)=O XYJLPCAKKYOLGU-UHFFFAOYSA-N 0.000 description 1
- PUVMVPFLXCHEOY-UHFFFAOYSA-N 3-phosphonopropylphosphonic acid Chemical compound OP(O)(=O)CCCP(O)(O)=O PUVMVPFLXCHEOY-UHFFFAOYSA-N 0.000 description 1
- YSWBFLWKAIRHEI-UHFFFAOYSA-N 4,5-dimethyl-1h-imidazole Chemical compound CC=1N=CNC=1C YSWBFLWKAIRHEI-UHFFFAOYSA-N 0.000 description 1
- HOJZEMQCQRPLQQ-UHFFFAOYSA-N 4-phenylpyrrolidin-2-one Chemical compound C1NC(=O)CC1C1=CC=CC=C1 HOJZEMQCQRPLQQ-UHFFFAOYSA-N 0.000 description 1
- JKTORXLUQLQJCM-UHFFFAOYSA-N 4-phosphonobutylphosphonic acid Chemical compound OP(O)(=O)CCCCP(O)(O)=O JKTORXLUQLQJCM-UHFFFAOYSA-N 0.000 description 1
- QRKINCQKOGXVEO-UHFFFAOYSA-N 5-phosphonopentylphosphonic acid Chemical compound OP(O)(=O)CCCCCP(O)(O)=O QRKINCQKOGXVEO-UHFFFAOYSA-N 0.000 description 1
- WDYVUKGVKRZQNM-UHFFFAOYSA-N 6-phosphonohexylphosphonic acid Chemical compound OP(O)(=O)CCCCCCP(O)(O)=O WDYVUKGVKRZQNM-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- YKDYLTZTQIKVMQ-UHFFFAOYSA-N C(CCCCC)P(=O)(O)OP(=O)O Chemical class C(CCCCC)P(=O)(O)OP(=O)O YKDYLTZTQIKVMQ-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical group OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- JYXGIOKAKDAARW-UHFFFAOYSA-N N-(2-hydroxyethyl)iminodiacetic acid Chemical compound OCCN(CC(O)=O)CC(O)=O JYXGIOKAKDAARW-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- VSSAZBXXNIABDN-UHFFFAOYSA-N cyclohexylmethanol Chemical compound OCC1CCCCC1 VSSAZBXXNIABDN-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 150000001983 dialkylethers Chemical class 0.000 description 1
- 125000006182 dimethyl benzyl group Chemical group 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002529 flux (metallurgy) Substances 0.000 description 1
- YVIVRJLWYJGJTJ-UHFFFAOYSA-N gamma-Valerolactam Chemical compound CC1CCC(=O)N1 YVIVRJLWYJGJTJ-UHFFFAOYSA-N 0.000 description 1
- 229930182478 glucoside Natural products 0.000 description 1
- RBNPOMFGQQGHHO-UHFFFAOYSA-N glyceric acid Chemical compound OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- OHMBHFSEKCCCBW-UHFFFAOYSA-N hexane-2,5-diol Chemical compound CC(O)CCC(C)O OHMBHFSEKCCCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- RIWRFSMVIUAEBX-UHFFFAOYSA-N n-methyl-1-phenylmethanamine Chemical compound CNCC1=CC=CC=C1 RIWRFSMVIUAEBX-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0014—Brazing of honeycomb sandwich structures
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
- C11D3/361—Phosphonates, phosphinates or phosphonites
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
本發明係關於一種助焊劑殘餘物除去用清潔劑組合物、使用該清潔劑組合物之清潔方法及電子零件之製造方法。The present invention relates to a cleaning agent composition for removing flux residues, a cleaning method using the cleaning agent composition, and a manufacturing method of electronic parts.
近年來,關於電子零件向印刷配線板或陶瓷基板之安裝,從低耗電、高速處理等觀點出發,零件小型化而於焊料助焊劑之清潔時應清潔之間隙變窄。又,就環境安全方面而言開始使用無鉛焊料,伴隨於此而使用松香系助焊劑。In recent years, regarding the mounting of electronic components on printed wiring boards or ceramic substrates, from the viewpoints of low power consumption and high-speed processing, the miniaturization of components has narrowed the gap that should be cleaned when cleaning with solder flux. In terms of environmental safety, lead-free solders have been used, and rosin-based fluxes have been used along with this.
例如,國際公開第2011/027673號(專利文獻1)中揭示有相對於水100重量份而包含二醇醚化合物5~100重量份之無鉛焊料水溶性助焊劑除去用清潔劑。 國際公開第2005/021700號(專利文獻2)中揭示有如下焊料助焊劑除去用清潔劑,其特徵在於:相對於總量,於二醇化合物之含量未達1重量%之情形時,將苄醇之含量設為70~99.9重量%之範圍及將胺基醇之含量設為0.1~30重量%之範圍,於二醇化合物之含量為1~40重量%之情形時,將苄醇之含量設為15~99重量%之範圍及將胺基醇之含量設為0.1~30重量%之範圍。 日本專利特開2004-2688號公報(專利文獻3)中揭示有如下含水系清潔劑組合物:含有有機溶劑、具有碳數4~12之烷基或烯基之甘油醚5~30重量%、及水5重量%以上而成且用於金屬零件、電子零件、半導體零件及液晶顯示面板等精密零件。 日本專利特開2018-21093號公報(專利文獻4)中揭示有如下網版用清潔劑組合物:含有對於25℃之水100 g之溶解度未達10 g之胺或其鹽、對於25℃之水100 g之溶解度為0.02 g以上且未達10 g之溶劑、及水,且上述胺為選自碳數6以上26以下之一級胺、二級胺及三級胺中之至少一種。For example, International Publication No. 2011/027673 (Patent Document 1) discloses a cleaner for removing lead-free solder water-soluble flux containing 5 to 100 parts by weight of a glycol ether compound with respect to 100 parts by weight of water. International Publication No. 2005/021700 (Patent Document 2) discloses the following cleaning agent for removing solder flux, which is characterized in that when the content of the glycol compound is less than 1% by weight relative to the total amount, benzyl The content of the alcohol is set in the range of 70 to 99.9% by weight and the content of the amino alcohol is set in the range of 0.1 to 30% by weight. When the content of the diol compound is 1 to 40% by weight, the content of benzyl alcohol The range is 15 to 99% by weight, and the content of the amino alcohol is 0.1 to 30% by weight. Japanese Patent Laid-Open No. 2004-2688 (Patent Document 3) discloses an aqueous detergent composition containing an organic solvent, 5 to 30% by weight of glycerol ether having an alkyl or alkenyl group having 4 to 12 carbon atoms, It is made of more than 5% by weight of water and used for precision parts such as metal parts, electronic parts, semiconductor parts, and liquid crystal display panels. Japanese Patent Laid-Open No. 2018-21093 (Patent Document 4) discloses the following cleaning composition for a screen: it contains an amine or its salt with a solubility of less than 10 g for 100 g of water at 25°C, Solvents with a solubility of 0.02 g or more and less than 10 g in 100 g of water, and water, and the amine is at least one selected from the group consisting of primary amines, secondary amines, and tertiary amines with 6 to 26 carbon atoms.
本發明於一態樣中係關於一種助焊劑殘餘物除去用清潔劑組合物,其含有溶劑(成分A)、漢森溶解度參數之極性項(δp)為7.8以下之胺(成分B)、及下述式(VI)所表示之二膦酸(成分C),或係調配成分A、成分B及成分C而成。 [化1] 上述式(VI)中,X為碳數1以上6以下之伸烷基或羥基伸烷基。In one aspect, the present invention relates to a cleaning composition for removing flux residues, which contains a solvent (component A), an amine (component B) whose polarity term (δp) of the Hansen solubility parameter is 7.8 or less, and The bisphosphonic acid (component C) represented by the following formula (VI) may be obtained by blending component A, component B, and component C. [化1] In the above formula (VI), X is an alkylene group or hydroxyalkylene group having a carbon number of 1 or more and 6 or less.
本發明於一態樣中係關於一種清潔方法,其包括利用本發明之清潔劑組合物對具有助焊劑殘餘物之被清潔物進行清潔之步驟。In one aspect, the present invention relates to a cleaning method, which includes the step of using the cleaning agent composition of the present invention to clean an object to be cleaned with flux residue.
本發明於一態樣中係關於一種電子零件之製造方法,其包括如下步驟:選自將選自半導體晶片、晶片型電容器及電路基板中之至少一種零件藉由使用助焊劑之焊接而搭載於電路基板上之步驟以及將用於連接上述零件等之焊料凸塊形成於電路基板上之步驟中的至少一個步驟;及藉由本發明之清潔方法對選自搭載有上述零件之電路基板及形成有上述焊料凸塊之電路基板中之至少一種進行清潔之步驟。In one aspect, the present invention relates to a method of manufacturing an electronic component, which includes the steps of: mounting at least one component selected from the group consisting of semiconductor chips, chip-type capacitors, and circuit substrates by soldering using flux At least one of the steps on the circuit board and the step of forming solder bumps for connecting the above-mentioned components on the circuit board; and the cleaning method of the present invention is used to select from the circuit boards equipped with the above-mentioned components and those formed with The step of cleaning at least one of the circuit substrates of the solder bumps.
近年來,因半導體封裝基板之小型化,而焊料凸塊微小化或與要連接之零件之間隙變窄。而且,因焊料凸塊微小化或與要連接之零件之間隙變窄,而關於上述專利文獻中揭示之清潔劑組合物,助焊劑殘餘物之除去性(助焊劑除去性)不足,清潔性不可謂之為充分。進而,對於清潔劑組合物,亦要求提高回焊時所產生之氧化錫或錫鹽之除去性(錫除去性)。又,對於清潔劑組合物,要求可確保不會分離而穩定之液體狀態。In recent years, due to the miniaturization of semiconductor package substrates, the solder bumps have been miniaturized or the gap between the solder bumps and the parts to be connected has narrowed. In addition, due to the miniaturization of solder bumps or the narrowing of the gap between the solder bumps and the parts to be connected, the cleaning agent composition disclosed in the above-mentioned patent documents has insufficient removability of flux residues (flux removal properties) and poor cleaning performance. It can be said to be sufficient. Furthermore, the cleaning agent composition is also required to improve the removability (tin removability) of tin oxide or tin salt generated during reflow. In addition, the detergent composition is required to ensure a stable liquid state without separation.
因此,本發明提供一種確保穩定之液體狀態且助焊劑除去性及錫除去性優異之助焊劑殘餘物除去用清潔劑組合物、使用其之清潔方法及電子零件之製造方法。Therefore, the present invention provides a cleaning composition for removing flux residues that ensures a stable liquid state and is excellent in flux removability and tin removability, a cleaning method using the cleaning composition, and a manufacturing method of electronic parts.
根據本發明,可提供一種確保穩定之液體狀態且助焊劑除去性及錫除去性優異之助焊劑殘餘物除去用清潔劑組合物。According to the present invention, it is possible to provide a cleaning composition for removing flux residues that ensures a stable liquid state and is excellent in flux removability and tin removability.
本發明係基於如下見解:藉由使用含有特定之溶劑(成分A)、特定之胺(成分B)及特定之二膦酸(成分C)之清潔劑組合物,或調配成分A、成分B及成分C而成之清潔劑組合物,而確保穩定之液體狀態,且助焊劑除去性及錫除去性較先前提高。The present invention is based on the following knowledge: by using a detergent composition containing a specific solvent (component A), a specific amine (component B), and a specific bisphosphonic acid (component C), or formulating component A, component B and The cleaning agent composition composed of component C ensures a stable liquid state, and the flux removability and tin removability are improved compared to the previous ones.
即,本發明於一個或複數個實施形態中係關於一種含有溶劑(成分A)、漢森溶解度參數之極性項(δp)為7.8以下之胺(成分B)及上述式(VI)所示之二膦酸(成分C)之助焊劑殘餘物除去用清潔劑組合物,或調配成分A、成分B及成分C而成之助焊劑殘餘物除去用清潔劑組合物(以下,亦將該等統稱為「本發明之清潔劑組合物」)。根據本發明,於一個或複數個實施形態中,可效率良好地除去助焊劑殘餘物。又,根據本發明,於一個或複數個實施形態中,可效率良好地除去回焊時所產生之氧化錫或錫鹽。進而,根據本發明,於一個或複數個實施形態中,可獲得穩定性較高且均勻透明之助焊劑殘餘物除去用清潔劑組合物。That is, the present invention in one or more embodiments relates to an amine containing a solvent (component A), the polarity term (δp) of the Hansen solubility parameter is 7.8 or less (component B) and the formula (VI) A cleaning composition for removing flux residues of bisphosphonic acid (component C), or a cleaning composition for removing flux residues obtained by blending component A, component B, and component C (hereinafter, these are also collectively referred to as It is the "cleansing composition of the present invention"). According to the present invention, in one or more embodiments, the flux residue can be efficiently removed. Furthermore, according to the present invention, in one or more embodiments, tin oxide or tin salt generated during reflow can be efficiently removed. Furthermore, according to the present invention, in one or more embodiments, a cleaner composition for removing flux residues with high stability and uniform transparency can be obtained.
本發明之清潔劑組合物之效果之作用機制的詳情雖有不明部分,但推定為如下。 即,本發明之清潔劑組合物中,成分A(溶劑)滲透至助焊劑及因回焊等而劣化之助焊劑殘餘物而使黏度下降,變得易於流動,並且成分B(胺)發揮作用,而使助焊劑及助焊劑殘餘物分解或將之親水化而使其容易溶於清潔劑組合物中。 又,推測為藉由成分B(胺),助焊劑及助焊劑殘餘物之清潔後之沖洗步驟中之向水中的溶解性變高,可提高沖洗之助焊劑除去性,從而可降低清潔及沖洗後之助焊劑殘餘物之殘存。 進而,若本發明之清潔劑組合物中成分B與成分C形成鹽,則成分B(胺)與和錫之親和性較高之成分C(二膦酸)之鹽作用於藉由回焊所生成且附著在助焊劑殘餘物中或被清潔物上之氧化錫或錫鹽,使其容易溶於清潔劑組合物中。又,推測為藉由成分B與成分C之鹽,清潔後之沖洗步驟中之氧化錫或錫鹽向水中之溶解性變高,從而錫除去性提高,可降低清潔及沖洗後之氧化錫或錫鹽之殘存。 而且,關於成分B與成分C之鹽,推測為藉由使成分B(胺)之漢森溶解度參數之極性項(δp)為7.8以下,可使與成分C(二膦酸)之鹽溶解於成分A(溶劑),而獲得均勻且穩定之清潔劑組合物。 但,本發明亦可不限定於該機制而進行解釋。Although the details of the mechanism of action of the effect of the detergent composition of the present invention are unclear, it is estimated as follows. That is, in the detergent composition of the present invention, the component A (solvent) penetrates into the flux and the flux residue that is degraded by reflow, etc., so that the viscosity decreases and becomes easy to flow, and the component B (amine) functions , And the flux and flux residues are decomposed or hydrophilized to make them easily soluble in the detergent composition. In addition, it is presumed that the flux and flux residues are more soluble in water in the flushing step after cleaning with component B (amine), which can improve the flux removal of flushing, thereby reducing cleaning and flushing. The residual flux residue afterwards. Furthermore, if component B and component C in the detergent composition of the present invention form a salt, the salt of component B (amine) and component C (diphosphonic acid), which has a higher affinity for tin, acts on the The tin oxide or tin salt generated and attached to the flux residue or the cleaned object makes it easy to dissolve in the cleaning agent composition. In addition, it is estimated that the salt of component B and component C increases the solubility of tin oxide or tin salt in water in the rinsing step after cleaning, thereby improving the removal of tin and reducing the tin oxide or tin oxide after cleaning and rinsing. The remnants of tin salt. Furthermore, regarding the salt of component B and component C, it is estimated that by making the polarity term (δp) of the Hansen solubility parameter of component B (amine) 7.8 or less, the salt of component C (bisphosphonic acid) can be dissolved in Component A (solvent) to obtain a uniform and stable detergent composition. However, the present invention may be interpreted without being limited to this mechanism.
本發明中所謂「助焊劑」係指用於去除妨礙電極或配線等金屬與焊料金屬之連接之氧化物以促進上述連接之含有用於焊接之松香或松香衍生物的松香系助焊劑或不含松香之水溶性助焊劑等,本發明中「焊接」包含回焊方式及流焊方式之焊接。本發明中所謂「焊料助焊劑」係指焊料與助焊劑之混合物。本發明中所謂「助焊劑殘餘物」係指殘存於使用助焊劑形成焊料凸塊後之基板及/或使用助焊劑進行焊接後之基板等之源自助焊劑之殘餘物。例如,若於電路基板上積層搭載其他零件(例如,半導體晶片、晶片型電容器、其他電路基板等),則於上述電路基板與上述其他零件之間會形成空間(間隙)。用於上述搭載之助焊劑於藉由回焊等進行焊接之後亦會以助焊劑殘餘物之形式殘存於該間隙。本發明中所謂「助焊劑殘餘物除去用清潔劑組合物」係指用於除去使用助焊劑或焊料助焊劑形成焊料凸塊及/或焊接後之助焊劑殘餘物之清潔劑組合物。就本發明之清潔劑組合物之清潔性之顯著效果顯現之方面而言,焊料較佳為含有錫之無鉛(Pb)焊料。The term "flux" in the present invention refers to a rosin-based flux containing rosin or rosin derivatives used for soldering or not containing oxides that interfere with the connection of metals such as electrodes or wiring and solder metals to promote the connection For the water-soluble flux of rosin, etc., the "welding" in the present invention includes reflow welding and flow welding. The "solder flux" in the present invention refers to a mixture of solder and flux. In the present invention, the "flux residue" refers to the residue of self-service flux remaining on the substrate after the solder bumps are formed with flux and/or the substrate after soldering with flux. For example, if other components (for example, semiconductor chips, chip capacitors, other circuit substrates, etc.) are stacked and mounted on a circuit board, a space (gap) is formed between the circuit board and the other components. The flux used for the above mounting will also remain in the gap in the form of flux residue after soldering by reflow or the like. In the present invention, the "cleaning agent composition for removing flux residues" refers to a cleaning agent composition used to remove solder bumps formed by using flux or solder flux and/or flux residues after soldering. In terms of the manifestation of the significant effect of the cleaning agent composition of the present invention, the solder is preferably a lead (Pb)-free solder containing tin.
本發明中,所謂漢森溶解度參數(Hansen solubility parameter)(以下亦稱為「HSP」)係Charles M. Hansen於1967年發表之用於預測物質之溶解性之值,且係基於「分子間之相互作用相似之2種物質容易相互溶解」之觀點之參數。HSP包含以下之3個參數(單位:MPa0.5 )。 δd:基於分子間之分散力之能量 δp:基於分子間之偶極相互作用之能量 δh:基於分子間之氫鍵之能量 化學工業2010年3月號(化學工業公司)等中有詳細說明,藉由使用電腦用軟體「HSPiP:Hansen Solubility Parameters in Practice」等,可獲得各種物質之漢森溶解度參數。In the present invention, the so-called Hansen solubility parameter (hereinafter also referred to as "HSP") is the value used to predict the solubility of substances published by Charles M. Hansen in 1967, and is based on the "intermolecular The parameter of the viewpoint that two substances with similar interaction are easy to dissolve each other. HSP includes the following 3 parameters (unit: MPa 0.5 ). δd: Energy based on the dispersion force between molecules δp: Energy based on the dipole interaction between molecules δh: Energy based on the hydrogen bond between molecules The chemical industry March 2010 issue (Chemical Industry Corporation), etc. has a detailed description, By using the computer software "HSPiP: Hansen Solubility Parameters in Practice", etc., the Hansen solubility parameters of various substances can be obtained.
[成分A:溶劑] 本發明之清潔劑組合物中之成分A於一個或複數個實施形態中,就提高助焊劑除去性之觀點而言,較佳為選自下述式(I)所表示之化合物、下述式(II)所表示之化合物及下述式(III)所表示之化合物中之至少一種溶劑。[Component A: Solvent] In one or more embodiments of the detergent composition of the present invention, component A is preferably selected from compounds represented by the following formula (I) and the following formulae from the viewpoint of improving flux removability At least one solvent of the compound represented by (II) and the compound represented by the following formula (III).
R1 -O-(AO)n -R2 (I)R 1 -O-(AO) n -R 2 (I)
上述式(I)中,R1 為苯基或碳數1以上8以下之烷基,R2 為氫原子或碳數1以上4以下之烷基,AO為環氧乙烷基或環氧丙烷基,n為AO之加成莫耳數且為1以上3以下之整數。In the above formula (I), R 1 is a phenyl group or an alkyl group having 1 to 8 carbon atoms, R 2 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and AO is an ethylene oxide group or propylene oxide. Base, n is the number of added moles of AO and is an integer from 1 to 3.
上述式(I)中,R1 為苯基或碳數1以上8以下之烷基,就提高助焊劑除去性之觀點而言,較佳為苯基或碳數4以上6以下之烷基,更佳為碳數4以上6以下之烷基。R2 為氫原子或碳數1以上4以下之烷基,就同樣之觀點而言,較佳為氫原子或碳數2以上4以下之烷基,更佳為氫原子或正丁基。AO為環氧乙烷基或環氧丙烷基,就同樣之觀點而言,較佳為環氧乙烷基。n為1以上3以下之整數,就同樣之觀點而言,較佳為1或2,更佳為2。In the above formula (I), R 1 is a phenyl group or an alkyl group having 1 or more and 8 carbon atoms. From the viewpoint of improving the flux removal property, it is preferably a phenyl group or an alkyl group having 4 or more and 6 carbon atoms. More preferably, it is an alkyl group having 4 to 6 carbon atoms. R 2 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. From the same viewpoint, it is preferably a hydrogen atom or an alkyl group having 2 to 4 carbon atoms, and more preferably a hydrogen atom or n-butyl group. AO is an ethylene oxide group or a propylene oxide group, and from the same viewpoint, an ethylene oxide group is preferable. n is an integer of 1 or more and 3 or less, and from the same viewpoint, 1 or 2 is preferable, and 2 is more preferable.
作為上述式(I)所表示之化合物,例如可列舉:乙二醇單苯醚、二乙二醇單苯醚、三乙二醇單苯醚等單苯醚;具有碳數1以上8以下之烷基之乙二醇單烷基醚、二乙二醇單烷基醚、三乙二醇單烷基醚等單烷基醚;具有碳數1以上8以下之烷基及碳數1以上4以下之烷基之乙二醇二烷基醚、二乙二醇二烷基醚、三乙二醇二烷基醚等二烷基醚;具有苯基及碳數1以上4以下之烷基之乙二醇苯基烷基醚、二乙二醇苯基烷基醚、三乙二醇苯基烷基醚等苯基烷基醚。作為上述式(I)所表示之化合物,就提高助焊劑除去性之觀點而言,較佳為選自乙二醇單丁醚、二乙二醇單丁醚、三乙二醇單丁醚、乙二醇單己醚、二乙二醇單己醚、乙二醇單苯醚、二乙二醇單苯醚、丙二醇單丁醚、二丙二醇單丁醚、三丙二醇單丁醚、乙二醇二丁醚、二乙二醇二丁醚及三乙二醇二丁醚中之至少一種,更佳為選自二乙二醇單丁醚、二乙二醇單己醚、二乙二醇單苯醚、二丙二醇單丁醚及二乙二醇二丁醚中之至少一種,進而較佳為選自二乙二醇單丁醚、二丙二醇單丁醚及二乙二醇二丁醚中之至少一種。The compound represented by the above formula (I) includes, for example, monophenyl ethers such as ethylene glycol monophenyl ether, diethylene glycol monophenyl ether, and triethylene glycol monophenyl ether; those having a carbon number of 1 to 8 Alkyl glycol monoalkyl ethers, diethylene glycol monoalkyl ethers, triethylene glycol monoalkyl ethers and other monoalkyl ethers; alkyl groups with carbon numbers 1 to 8 and carbon numbers from 1 to 4 Dialkyl ethers such as ethylene glycol dialkyl ether, diethylene glycol dialkyl ether, and triethylene glycol dialkyl ether of the following alkyl groups; those with a phenyl group and an alkyl group with 1 to 4 carbon atoms Phenyl alkyl ethers such as ethylene glycol phenyl alkyl ether, diethylene glycol phenyl alkyl ether, and triethylene glycol phenyl alkyl ether. The compound represented by the above formula (I) is preferably selected from the group consisting of ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, from the viewpoint of improving flux removability. Ethylene glycol monohexyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, diethylene glycol monophenyl ether, propylene glycol monobutyl ether, dipropylene glycol monobutyl ether, tripropylene glycol monobutyl ether, ethylene glycol At least one of dibutyl ether, diethylene glycol dibutyl ether and triethylene glycol dibutyl ether, more preferably selected from diethylene glycol monobutyl ether, diethylene glycol monohexyl ether, diethylene glycol mono At least one of phenyl ether, dipropylene glycol monobutyl ether and diethylene glycol dibutyl ether, and more preferably selected from diethylene glycol monobutyl ether, dipropylene glycol monobutyl ether and diethylene glycol dibutyl ether At least one.
R3 -CH2 OH (II)R 3 -CH 2 OH (II)
上述式(II)中,R3 表示苯基、苄基、環己基、呋喃基、四氫呋喃基、呋喃甲基或四氫呋喃甲基,就提高助焊劑除去性之觀點而言,較佳為苯基、環己基或四氫呋喃基,更佳為苯基或四氫呋喃基。In the above formula (II), R 3 represents a phenyl group, a benzyl group, a cyclohexyl group, a furyl group, a tetrahydrofuryl group, a furyl methyl group, or a tetrahydrofuryl methyl group. From the viewpoint of improving the flux removability, a phenyl group, Cyclohexyl or tetrahydrofuranyl, more preferably phenyl or tetrahydrofuranyl.
作為上述式(II)所表示之化合物,例如可列舉:苄醇、苯乙醇、環己烷甲醇、呋喃甲醇及四氫呋喃甲醇。作為上述式(II)所表示之化合物,就提高助焊劑除去性之觀點而言,較佳為選自苄醇、呋喃甲醇及四氫呋喃甲醇中之至少一種,更佳為選自苄醇及四氫呋喃甲醇中之至少一種。Examples of the compound represented by the formula (II) include benzyl alcohol, phenethyl alcohol, cyclohexane methanol, furan methanol, and tetrahydrofuran methanol. The compound represented by the above formula (II) is preferably at least one selected from benzyl alcohol, furanmethanol, and tetrahydrofuranmethanol, and more preferably selected from benzyl alcohol and tetrahydrofuranmethanol, from the viewpoint of improving flux removability At least one of them.
[化2] [化2]
上述式(III)中,R4 、R5 、R6 、R7 分別獨立為氫原子、碳數1以上8以下之烴基、碳數1以上3以下之羥烷基或羥基,就提高助焊劑除去性之觀點而言,較佳為R4 、R5 、R6 、R7 之任一者為碳數1以上8以下之烴基,更佳為碳數1以上6以下之烴基,進而較佳為甲基、乙基、乙烯基之任一者。In the above formula (III), R 4 , R 5 , R 6 , and R 7 are each independently a hydrogen atom, a hydrocarbon group with a carbon number of 1 to 8 or a hydroxyalkyl group or a hydroxyl group with a carbon number of 1 to 3, which increases the flux From the viewpoint of removability, it is preferable that any one of R 4 , R 5 , R 6 , and R 7 is a hydrocarbon group having 1 to 8 carbon atoms, more preferably a hydrocarbon group having 1 to 6 carbon atoms, and still more preferable Any of methyl, ethyl, and vinyl.
作為上述式(III)所表示之化合物,例如可列舉:2-吡咯啶酮、1-甲基-2-吡咯啶酮、1-乙基-2-吡咯啶酮、1-乙烯基-2-吡咯啶酮、1-苯基-2-吡咯啶酮、1-環己基-2-吡咯啶酮、1-辛基-2-吡咯啶酮、3-羥丙基-2-吡咯啶酮、4-羥基-2-吡咯啶酮、4-苯基-2-吡咯啶酮及5-甲基-2-吡咯啶酮等。作為上述式(III)所表示之化合物,就提高助焊劑除去性之觀點而言,較佳為選自2-吡咯啶酮、1-甲基-2-吡咯啶酮、1-乙基-2-吡咯啶酮、1-乙烯基-2-吡咯啶酮、1-苯基-2-吡咯啶酮、1-環己基-2-吡咯啶酮、1-辛基-2-吡咯啶酮及5-甲基-2-吡咯啶酮中之至少一種,更佳為選自1-甲基-2-吡咯啶酮、1-乙基-2-吡咯啶酮及1-乙烯基-2-吡咯啶酮中之至少一種,進而較佳為1-甲基-2-吡咯啶酮。As the compound represented by the above formula (III), for example, 2-pyrrolidone, 1-methyl-2-pyrrolidone, 1-ethyl-2-pyrrolidone, 1-vinyl-2- Pyrrolidone, 1-phenyl-2-pyrrolidone, 1-cyclohexyl-2-pyrrolidone, 1-octyl-2-pyrrolidone, 3-hydroxypropyl-2-pyrrolidone, 4 -Hydroxy-2-pyrrolidone, 4-phenyl-2-pyrrolidone and 5-methyl-2-pyrrolidone, etc. The compound represented by the above formula (III) is preferably selected from the group consisting of 2-pyrrolidone, 1-methyl-2-pyrrolidone, and 1-ethyl-2 from the viewpoint of improving flux removability. -Pyrrolidone, 1-vinyl-2-pyrrolidone, 1-phenyl-2-pyrrolidone, 1-cyclohexyl-2-pyrrolidone, 1-octyl-2-pyrrolidone and 5 -At least one of methyl-2-pyrrolidone, more preferably selected from 1-methyl-2-pyrrolidone, 1-ethyl-2-pyrrolidone and 1-vinyl-2-pyrrolidine At least one of the ketones is more preferably 1-methyl-2-pyrrolidone.
成分A亦可為1種、2種之組合或2種以上之組合。於成分A為2種之組合之情形時,作為成分A,例如可列舉式(I)所表示之化合物與式(II)所表示之化合物之組合。Component A may also be a combination of one type, two types, or a combination of two or more types. When component A is a combination of two types, as component A, for example, a combination of a compound represented by formula (I) and a compound represented by formula (II) can be cited.
作為成分A,就提高助焊劑除去性之觀點而言,較佳為選自二乙二醇單丁醚、二丙二醇單丁醚、二乙二醇二丁醚、苄醇、四氫呋喃甲醇及1-甲基-2-吡咯啶酮中之至少一種,更佳為選自二乙二醇單丁醚、苄醇、四氫呋喃甲醇及1-甲基-2-吡咯啶酮中之至少一種。As component A, it is preferably selected from the group consisting of diethylene glycol monobutyl ether, dipropylene glycol monobutyl ether, diethylene glycol dibutyl ether, benzyl alcohol, tetrahydrofuran methanol, and 1- At least one of methyl-2-pyrrolidone, more preferably at least one selected from the group consisting of diethylene glycol monobutyl ether, benzyl alcohol, tetrahydrofuran methanol, and 1-methyl-2-pyrrolidone.
本發明之清潔劑組合物中之成分A之含量就提高助焊劑除去性之觀點而言,較佳為70質量%以上,更佳為75質量%以上,進而較佳為78質量%以上,而且,較佳為99.5質量%以下,更佳為95質量%以下,進而較佳為90質量%以下。更具體而言,本發明之清潔劑組合物中之成分A之含量較佳為70質量%以上99.5質量%以下,更佳為75質量%以上95質量%以下,進而較佳為78質量%以上90質量%以下。於成分A為2種以上之組合之情形時,成分A之含量係指該等之合計含量。The content of Component A in the detergent composition of the present invention is preferably 70% by mass or more, more preferably 75% by mass or more, and still more preferably 78% by mass or more, from the viewpoint of improving flux removability, and , Preferably 99.5% by mass or less, more preferably 95% by mass or less, and still more preferably 90% by mass or less. More specifically, the content of Component A in the detergent composition of the present invention is preferably 70% by mass or more and 99.5% by mass or less, more preferably 75% by mass or more and 95% by mass or less, and more preferably 78% by mass or more 90% by mass or less. When component A is a combination of two or more types, the content of component A refers to the total content of these.
[成分B:胺] 本發明之清潔劑組合物中之成分B係漢森溶解度參數之極性項(δp)為7.8以下之胺。作為δp為7.8以下之胺(成分B),於一個或複數個實施形態中可列舉下述式(IV)或(V)所表示之胺。成分B亦可為1種、2種之組合或2種以上之組合。[Component B: Amine] The component B in the detergent composition of the present invention is an amine whose polarity term (δp) of the Hansen solubility parameter is 7.8 or less. As the amine (component B) having a δp of 7.8 or less, one or a plurality of embodiments includes an amine represented by the following formula (IV) or (V). Component B may be one type, a combination of two types, or a combination of two or more types.
[化3] [化3]
上述式(IV)中,R8 為氫原子、碳數1以上6以下之烷基、苯基、苄基、羥乙基或羥丙基,R9 及R10 分別獨立為碳數1以上6以下之烷基、羥乙基或羥丙基。就提高助焊劑除去性及提高錫除去性之觀點而言,R8 較佳為氫原子、碳數2以上6以下之烷基、苯基或苄基。In the above formula (IV), R 8 is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, phenyl, benzyl, hydroxyethyl or hydroxypropyl, and R 9 and R 10 are each independently a carbon number of 1 or more and 6 The following is alkyl, hydroxyethyl or hydroxypropyl. From the viewpoints of improving flux removability and improving tin removability, R 8 is preferably a hydrogen atom, an alkyl group having 2 to 6 carbon atoms, a phenyl group or a benzyl group.
作為漢森溶解度參數之極性項(δp)為7.8以下且上述式(IV)所表示之胺,可列舉:二丁基單乙醇胺、丁基二乙醇胺、二異丙醇胺等烷醇胺;二甲基苄基胺等芳香族胺。作為上述式(IV)所表示之胺之具體例,就提高助焊劑除去性及提高錫除去性之觀點而言,較佳為選自二丁基單乙醇胺、丁基二乙醇胺、二異丙醇胺及二甲基苄基胺中之至少一種,更佳為選自二丁基單乙醇胺、丁基二乙醇胺及二甲基苄基胺中之至少一種。The polarity term (δp) as the Hansen solubility parameter is 7.8 or less and the amines represented by the above formula (IV) include alkanolamines such as dibutylmonoethanolamine, butyldiethanolamine, and diisopropanolamine; Aromatic amines such as methylbenzylamine. As a specific example of the amine represented by the above formula (IV), it is preferably selected from the group consisting of dibutyl monoethanolamine, butyl diethanolamine, and diisopropanol from the viewpoint of improving flux removability and improving tin removability At least one of amine and dimethylbenzylamine, more preferably at least one selected from dibutylmonoethanolamine, butyldiethanolamine and dimethylbenzylamine.
[化4] [化4]
上述式(V)中,R11 為碳數1以上4以下之烷基,R12 為氫原子或甲基。就提高助焊劑除去性及提高錫除去性之觀點而言,R11 較佳為甲基或異丁基,R12 較佳為甲基。In the above formula (V), R 11 is an alkyl group having 1 to 4 carbon atoms, and R 12 is a hydrogen atom or a methyl group. From the viewpoints of improving flux removability and improving tin removability, R 11 is preferably methyl or isobutyl, and R 12 is preferably methyl.
作為漢森溶解度參數之極性項(δp)為7.8以下且上述式(V)所表示之胺,可列舉:1,2-二甲基咪唑、1-異丁基-2-甲基咪唑等咪唑類。作為上述式(V)所表示之胺之具體例,就提高助焊劑除去性及提高錫除去性之觀點而言,較佳為選自1,2-二甲基咪唑及1-異丁基-2-甲基咪唑中之至少一種,更佳為1,2-二甲基咪唑。The polarity term (δp) as the Hansen solubility parameter is 7.8 or less and the amines represented by the above formula (V) include imidazoles such as 1,2-dimethylimidazole and 1-isobutyl-2-methylimidazole class. As a specific example of the amine represented by the above formula (V), it is preferably selected from the group consisting of 1,2-dimethylimidazole and 1-isobutyl from the viewpoint of improving flux removability and improving tin removability. At least one of 2-methylimidazole, more preferably 1,2-dimethylimidazole.
成分B之漢森溶解度參數之極性項(δp)為7.8以下,就提高助焊劑除去性及提高穩定性之觀點而言,較佳為7.7以下,更佳為6以下,進而較佳為5以下,而且,就提高助焊劑除去性之觀點而言,較佳為1以上。更具體而言,成分B之漢森溶解度參數之極性項(δp)較佳為1以上7.7以下,更佳為1以上6以下,進而較佳為1以上5以下。The polarity term (δp) of the Hansen solubility parameter of component B is 7.8 or less. From the viewpoints of improving flux removal and improving stability, it is preferably 7.7 or less, more preferably 6 or less, and still more preferably 5 or less And, from the viewpoint of improving flux removal properties, it is preferably 1 or more. More specifically, the polarity term (δp) of the Hansen solubility parameter of component B is preferably 1 or more and 7.7 or less, more preferably 1 or more and 6 or less, and still more preferably 1 or more and 5 or less.
作為成分B,就提高穩定性之觀點而言,較佳為選自二丁基單乙醇胺、丁基二乙醇胺、二異丙醇胺、二甲基苄基胺、1,2-二甲基咪唑及1-異丁基-2-甲基咪唑中之至少一種,更佳為選自二丁基單乙醇胺、二甲基苄基胺及1-異丁基-2-甲基咪唑中之至少一種,進而較佳為選自二丁基單乙醇胺及二甲基苄基胺中之至少一種。作為成分B,就提高松香系助焊劑除去性之觀點而言,較佳為選自二丁基單乙醇胺、丁基二乙醇胺、二異丙醇胺、二甲基苄基胺、1,2-二甲基咪唑及1-異丁基-2-甲基咪唑中之至少一種,更佳為選自二丁基單乙醇胺、二甲基苄基胺、1,2-二甲基咪唑及1-異丁基-2-甲基咪唑中之至少一種,進而較佳為1,2-二甲基咪唑。As component B, from the viewpoint of improving stability, it is preferably selected from dibutyl monoethanolamine, butyl diethanolamine, diisopropanolamine, dimethylbenzylamine, 1,2-dimethylimidazole And at least one of 1-isobutyl-2-methylimidazole, more preferably at least one selected from dibutylmonoethanolamine, dimethylbenzylamine and 1-isobutyl-2-methylimidazole , More preferably at least one selected from dibutyl monoethanolamine and dimethylbenzylamine. As component B, it is preferably selected from the group consisting of dibutylmonoethanolamine, butyldiethanolamine, diisopropanolamine, dimethylbenzylamine, 1,2- At least one of dimethylimidazole and 1-isobutyl-2-methylimidazole, more preferably selected from dibutylmonoethanolamine, dimethylbenzylamine, 1,2-dimethylimidazole and 1- At least one of isobutyl-2-methylimidazole is more preferably 1,2-dimethylimidazole.
本發明之清潔劑組合物中之成分B之含量就提高助焊劑除去性及提高錫除去性之觀點而言,較佳為0.2質量%以上,更佳為0.3質量%以上,進而較佳為0.4質量%以上,進而更佳為0.5質量%以上,而且,就同樣之觀點而言,較佳為15質量%以下,更佳為10質量%以下,進而較佳為5質量%以下,進而更佳為3質量%以下。更具體而言,本發明之清潔劑組合物中之成分B之含量較佳為0.2質量%以上15質量%以下,更佳為0.3質量%以上10質量%以下,進而較佳為0.4質量%以上5質量%以下,進而更佳為0.5質量%以上3質量%以下。於成分B為2種以上之組合之情形時,成分B之含量係指該等之合計含量。The content of component B in the detergent composition of the present invention is preferably 0.2% by mass or more, more preferably 0.3% by mass or more, and still more preferably 0.4, from the viewpoint of improving flux removability and improving tin removability % By mass or more, more preferably 0.5% by mass or more, and from the same point of view, it is preferably 15% by mass or less, more preferably 10% by mass or less, still more preferably 5 mass% or less, and still more preferably It is 3% by mass or less. More specifically, the content of component B in the detergent composition of the present invention is preferably 0.2% by mass or more and 15% by mass or less, more preferably 0.3% by mass or more and 10% by mass or less, and still more preferably 0.4% by mass or more 5 mass% or less, more preferably 0.5 mass% or more and 3 mass% or less. When component B is a combination of two or more types, the content of component B refers to the total content of these.
本發明之清潔劑組合物中,成分A與成分B之質量比(A/B)就提高錫除去性之觀點而言,較佳為5以上,更佳為8以上,進而較佳為10以上,而且,就同樣之觀點而言,較佳為60以下,更佳為45以下,進而較佳為20以下。更具體而言,質量比(A/B)較佳為5以上60以下,更佳為8以上45以下,進而較佳為10以上20以下。In the detergent composition of the present invention, the mass ratio (A/B) of component A to component B is preferably 5 or more, more preferably 8 or more, and still more preferably 10 or more from the viewpoint of improving tin removability And, from the same viewpoint, it is preferably 60 or less, more preferably 45 or less, and still more preferably 20 or less. More specifically, the mass ratio (A/B) is preferably 5 or more and 60 or less, more preferably 8 or more and 45 or less, and still more preferably 10 or more and 20 or less.
[成分C:二膦酸(成分C)] 本發明之清潔劑組合物中之成分C為下述式(VI)所表示之二膦酸。成分C亦可為1種、2種之組合或2種以上之組合。[Component C: Bisphosphonic acid (component C)] Component C in the detergent composition of the present invention is bisphosphonic acid represented by the following formula (VI). Component C may be one type, a combination of two types, or a combination of two or more types.
[化5] [化5]
上述式(VI)中,X為碳數1以上6以下之伸烷基或羥基伸烷基。就提高錫除去性之觀點而言,X較佳為羥基伸烷基。又,就提高助焊劑除去性之觀點而言,X之碳數較佳為1以上4以下,更佳為1以上2以下。In the above formula (VI), X is an alkylene group or hydroxyalkylene group having a carbon number of 1 or more and 6 or less. From the viewpoint of improving tin removability, X is preferably a hydroxyalkylene group. In addition, from the viewpoint of improving the flux removability, the carbon number of X is preferably 1 or more and 4 or less, and more preferably 1 or more and 2 or less.
作為成分C之具體例,例如就提高助焊劑除去性之觀點而言,較佳為選自1-羥基亞乙基-1,1-二膦酸、亞甲基二膦酸、1,2-伸乙基二膦酸、1,3-伸丙基二膦酸、1,4-伸丁基二膦酸、1,5-伸戊基二膦酸及1,6-伸己基二膦酸中之至少一種二膦酸,更佳為選自1-羥基亞乙基-1,1-二膦酸及亞甲基二膦酸中之至少一種二膦酸,進而較佳為1-羥基亞乙基-1,1-二膦酸。As a specific example of component C, for example, from the viewpoint of improving flux removability, it is preferably selected from 1-hydroxyethylene-1,1-diphosphonic acid, methylene diphosphonic acid, 1,2- Among ethylene diphosphonic acid, 1,3-propylene diphosphonic acid, 1,4-butylene diphosphonic acid, 1,5-pentylene diphosphonic acid and 1,6-hexylene diphosphonic acid At least one diphosphonic acid, more preferably at least one diphosphonic acid selected from 1-hydroxyethylene-1,1-diphosphonic acid and methylene diphosphonic acid, and more preferably 1-hydroxyethylene Group-1,1-diphosphonic acid.
本發明之清潔劑組合物中之成分C之含量就提高助焊劑除去性及提高錫除去性之觀點而言,較佳為0.1質量%以上,更佳為0.3質量%以上,進而較佳為0.5質量%以上,而且,就提高助焊劑除去性及提高穩定性之觀點而言,較佳為3質量%以下,更佳為2質量%以下,進而較佳為1.5質量%以下,進而更佳為1質量%以下。更具體而言,成分C之含量較佳為0.1質量%以上3質量%以下,更佳為0.3質量%以上2質量%以下,進而較佳為0.3質量%以上1.5質量%以下,進而更佳為0.5質量%以上1質量%以下。於成分C為2種以上之組合之情形時,成分C之含量係指該等之合計含量。The content of Component C in the detergent composition of the present invention is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, and even more preferably 0.5 from the viewpoints of improving flux removability and improving tin removability Mass% or more, and from the viewpoints of improving flux removability and improving stability, it is preferably 3% by mass or less, more preferably 2% by mass or less, still more preferably 1.5% by mass or less, and still more preferably 1% by mass or less. More specifically, the content of component C is preferably 0.1% by mass to 3% by mass, more preferably 0.3% by mass to 2% by mass, still more preferably 0.3% by mass to 1.5% by mass, and still more preferably 0.5% by mass to 1% by mass. When the component C is a combination of two or more kinds, the content of the component C refers to the total content of these.
於本發明之清潔劑組合物中,認為成分B與成分C之鹽會參與助焊劑及錫之除去,且推測成分B與成分C之莫耳比B/C成為該等之除去性之因素。本發明之清潔劑組合物中之成分B與成分C之莫耳比B/C就提高助焊劑除去性及錫除去性之觀點而言,較佳為4以上,更佳為4.5以上,進而較佳為4.8以上,進而更佳為7以上,進一步更佳為10以上,而且,較佳為40以下,更佳為30以下,進而較佳為25以下,進而更佳為22以下,進一步更佳為18以下。更具體而言,莫耳比B/C較佳為4以上40以下,更佳為4.5以上30以下,進而較佳為4.8以上25以下,進而更佳為7以上22以下,進一步更佳為10以上18以下。In the detergent composition of the present invention, it is believed that the salt of component B and component C will participate in the removal of flux and tin, and it is speculated that the molar ratio B/C of component B and component C becomes a factor of the removability. The molar ratio B/C of Component B and Component C in the detergent composition of the present invention is preferably 4 or more, more preferably 4.5 or more from the viewpoint of improving flux removability and tin removability. It is preferably 4.8 or more, still more preferably 7 or more, still more preferably 10 or more, and more preferably 40 or less, more preferably 30 or less, still more preferably 25 or less, still more preferably 22 or less, still more preferably Below 18. More specifically, the molar ratio B/C is preferably 4 or more and 40 or less, more preferably 4.5 or more and 30 or less, still more preferably 4.8 or more and 25 or less, still more preferably 7 or more and 22 or less, and still more preferably 10 Above 18 and below.
本發明之清潔劑組合物中,就提高助焊劑除去性及提高錫除去性之觀點而言,較佳為於清潔時成分B之至少一部分與成分C形成鹽,且成分B之至少一部分不會與成分C形成鹽。即,本發明之清潔劑組合物於一個或複數個實施形態中,在清潔時含有成分B與成分C之鹽,並且含有不會與成分C形成鹽之成分B。本發明之清潔劑組合物中之成分B與成分C之鹽之含量就提高助焊劑除去性及提高錫除去性之觀點而言,較佳為0.1質量%以上,更佳為0.3質量%以上,進而較佳為0.7質量%以上,而且,較佳為10質量%以下,更佳為5質量%以下,進而較佳為3質量%以下。更具體而言,成分B與成分C之鹽之含量較佳為0.1質量%以上10量%以下,更佳為0.3質量%以上5質量%以下,進而較佳為0.7質量%以上3質量%以下。In the cleaning composition of the present invention, from the viewpoints of improving flux removability and improving tin removability, it is preferable that at least a part of component B forms a salt with component C during cleaning, and at least a part of component B does not Forms salt with ingredient C. That is, in one or more embodiments, the cleansing composition of the present invention contains the salt of component B and component C during cleaning, and contains component B that does not form a salt with component C. The content of the salt of component B and component C in the detergent composition of the present invention is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, from the viewpoint of improving flux removability and improving tin removability. It is more preferably 0.7% by mass or more, more preferably 10% by mass or less, more preferably 5% by mass or less, and still more preferably 3% by mass or less. More specifically, the content of the salt of component B and component C is preferably 0.1% by mass to 10% by mass, more preferably 0.3% by mass to 5% by mass, and still more preferably 0.7% by mass to 3% by mass. .
[成分D:水] 本發明之清潔劑組合物於一個或複數個實施形態中,可進而含有水(成分D)。作為成分D,可使用離子交換水、RO(reverse osmosis,逆滲透)水、蒸餾水、純水、超純水等。本發明之清潔劑組合物中之成分D之含量就降低引火點之觀點而言,較佳為1質量%以上,更佳為5質量%以上,進而較佳為8質量%以上,而且,就提高助焊劑除去性及提高穩定性之觀點而言,較佳為20質量%以下,更佳為15質量%以下,進而較佳為10質量%以下。更具體而言,本發明之清潔劑組合物中之成分D之含量較佳為1質量%以上20質量%以下,更佳為5質量%以上15質量%以下,進而較佳為8質量%以上10質量%以下。[Ingredient D: Water] The cleanser composition of the present invention may further contain water (component D) in one or more embodiments. As the component D, ion exchange water, RO (reverse osmosis) water, distilled water, pure water, ultrapure water, etc. can be used. The content of component D in the detergent composition of the present invention is preferably 1% by mass or more, more preferably 5% by mass or more, and still more preferably 8% by mass or more from the viewpoint of reducing the ignition point. From the viewpoints of improving flux removability and improving stability, it is preferably 20% by mass or less, more preferably 15% by mass or less, and still more preferably 10% by mass or less. More specifically, the content of Component D in the detergent composition of the present invention is preferably 1% by mass or more and 20% by mass or less, more preferably 5% by mass or more and 15% by mass or less, and more preferably 8% by mass or more 10% by mass or less.
於本發明之清潔劑組合物含有成分D之情形時,就提高穩定性之觀點而言,本發明之清潔劑組合物中所含之成分A較佳為併用二乙二醇單丁醚與該二乙二醇單丁醚以外之其他成分A。When the detergent composition of the present invention contains component D, from the viewpoint of improving stability, the component A contained in the detergent composition of the present invention is preferably a combination of diethylene glycol monobutyl ether and the Component A other than diethylene glycol monobutyl ether.
[其他成分] 本發明之清潔劑組合物除上述成分A~D以外,視需要可進而調配或含有其他成分。本發明之清潔劑組合物中之其他成分之含量較佳為0質量%以上10質量%以下,更佳為0質量%以上8質量%以下,進而較佳為0質量%以上5質量%以下,進而更佳為0質量%以上2質量%以下。[Other ingredients] In addition to the above-mentioned components A to D, the detergent composition of the present invention may be further formulated or contain other components as needed. The content of other components in the detergent composition of the present invention is preferably 0 mass% or more and 10 mass% or less, more preferably 0 mass% or more and 8 mass% or less, and still more preferably 0 mass% or more and 5 mass% or less, Furthermore, it is more preferable that it is 0 mass% or more and 2 mass% or less.
作為本發明之清潔劑組合物中之其他成分,就提高穩定性之觀點而言,例如可列舉界面活性劑(成分E)。作為成分E,就同樣之觀點而言,例如較佳為聚氧伸烷基烷基醚、聚氧伸烷基烷基胺、甘油脂肪酸酯、山梨醇酐脂肪酸酯、蔗糖脂肪酸酯、烷基葡萄糖苷、烷基甘油醚等非離子界面活性劑,更佳為聚氧伸烷基烷基醚、烷基甘油醚。作為成分E之具體例,可列舉聚氧乙烯癸醚、2-乙基己基甘油醚等。本發明之清潔劑組合物中之成分E之含量就提高穩定性之觀點而言,較佳為0.5質量%以上,更佳為0.8質量%以上,而且,較佳為5質量%以下,更佳為3質量%以下,進而較佳為2質量%以下。更具體而言,本發明之清潔劑組合物中之成分E之含量較佳為0.5質量%以上5質量%以下,更佳為0.5質量%以上3質量%以下,進而較佳為0.8質量%以上2質量%以下。As other components in the detergent composition of the present invention, from the viewpoint of improving stability, for example, a surfactant (component E) can be cited. As component E, from the same viewpoint, for example, polyoxyalkylene alkyl ether, polyoxyalkylene alkylamine, glycerin fatty acid ester, sorbitan fatty acid ester, sucrose fatty acid ester, Nonionic surfactants such as alkyl glucoside and alkyl glycerol ether are more preferably polyoxyalkylene alkyl ether and alkyl glycerol ether. As a specific example of component E, polyoxyethylene decyl ether, 2-ethylhexyl glyceryl ether, etc. are mentioned. From the viewpoint of improving stability, the content of component E in the detergent composition of the present invention is preferably 0.5% by mass or more, more preferably 0.8% by mass or more, and preferably 5% by mass or less, more preferably It is 3% by mass or less, and more preferably 2% by mass or less. More specifically, the content of Component E in the detergent composition of the present invention is preferably 0.5% by mass or more and 5% by mass or less, more preferably 0.5% by mass or more and 3% by mass or less, and still more preferably 0.8% by mass or more 2% by mass or less.
作為進而其他成分,本發明之清潔劑組合物可於無損本發明之效果之範圍內視需要適當調配或含有通常清潔劑中所使用之羥乙基胺基乙酸、羥乙基亞胺基二乙酸、乙二胺四乙酸等胺基羧酸鹽等具有螯合力之化合物、苯并三唑等防銹劑、增黏劑、分散劑、成分B以外之鹼性物質、高分子化合物、助溶劑、防腐劑、殺菌劑、抗菌劑、消泡劑、抗氧化劑。As other ingredients, the detergent composition of the present invention can be appropriately formulated as needed or contain hydroxyethylaminoacetic acid and hydroxyethyliminodiacetic acid commonly used in detergents within a range that does not impair the effects of the present invention. , Ethylenediaminetetraacetic acid and other amino carboxylates with chelating power, benzotriazole and other rust inhibitors, thickeners, dispersants, basic substances other than component B, polymer compounds, cosolvents, Preservatives, bactericides, antibacterial agents, defoamers, antioxidants.
[清潔劑組合物之製造方法] 本發明之清潔劑組合物例如可藉由利用公知之方法調配成分A、成分B、成分C、以及視需要之上述成分D及其他成分而製造。於一個或複數個實施形態中,本發明之清潔劑組合物可設為至少調配成分A、成分B及成分C而成者。因此,本發明於一態樣中係關於一種包括至少調配成分A、成分B、成分C之步驟之清潔劑組合物之製造方法(以下,亦稱為「本發明之清潔劑組合物之製造方法」)。本發明之清潔劑組合物之製造方法中,成分B與成分C可個別地調配,亦可作為成分B與成分C之鹽而調配。本發明之清潔劑組合物之製造方法於一個或複數個實施形態中,可在調配成分B與成分C之後調配成分A、以及視需要之上述成分D及其他成分。本發明中所謂「調配」包括將成分A、成分B、成分C、以及視需要之成分D及其他成分同時或按任意順序進行混合。本發明之清潔劑組合物之製造方法中,各成分之調配量可設為與上述本發明之清潔劑組合物之各成分之含量相同。[Manufacturing method of detergent composition] The cleansing composition of the present invention can be produced by, for example, blending component A, component B, component C, and optionally the aforementioned component D and other components by a known method. In one or more embodiments, the cleansing composition of the present invention can be prepared by blending at least component A, component B, and component C. Therefore, in one aspect, the present invention relates to a method of manufacturing a detergent composition including at least the steps of blending component A, component B, and component C (hereinafter, also referred to as "the manufacturing method of the detergent composition of the present invention" "). In the manufacturing method of the detergent composition of the present invention, the component B and the component C may be separately formulated, or may be formulated as a salt of the component B and the component C. In the manufacturing method of the detergent composition of the present invention, in one or more embodiments, the component A, the above-mentioned component D and other components may be formulated after the component B and the component C are formulated. The "preparation" in the present invention includes mixing component A, component B, component C, and optionally component D and other components simultaneously or in any order. In the manufacturing method of the detergent composition of the present invention, the blending amount of each component can be the same as the content of each component of the detergent composition of the present invention.
本發明中所謂「清潔劑組合物中之各成分之含量」係指於清潔時,即於將清潔劑組合物用於清潔之時間點之上述各成分之含量。In the present invention, the "content of each component in the detergent composition" refers to the content of the above-mentioned components at the time of cleaning, that is, at the point in time when the detergent composition is used for cleaning.
本發明之清潔劑組合物就添加作業、儲藏及運輸之觀點而言,亦可以濃縮物之形式製造及保管。作為本發明之清潔劑組合物之濃縮物之稀釋倍率,例如可列舉3倍以上30倍以下。本發明之清潔劑組合物之濃縮物可於使用時以成分A、成分B、成分C、以及視需要調配之成分D及其他成分成為上述含量(即,清潔時之含量)之方式利用水(成分D)進行稀釋而使用。The detergent composition of the present invention can also be manufactured and stored in the form of a concentrate from the viewpoint of addition operation, storage and transportation. As the dilution ratio of the concentrate of the detergent composition of the present invention, for example, 3 times or more and 30 times or less can be cited. The concentrate of the detergent composition of the present invention can be used in such a way that component A, component B, component C, and optionally formulated component D and other components become the above content (that is, the content during cleaning). Component D) is diluted and used.
[清潔劑組合物之pH值] 本發明之清潔劑組合物就使助焊劑殘餘物之除去性提高之方面而言,較佳為鹼性,例如較佳為pH值8以上pH值14以下。pH值可藉由視需要適當以所需量調配如下者而進行調整,即:硝酸、硫酸等無機酸;羥基羧酸、多元羧酸、胺基聚羧酸、胺基酸等有機酸;及該等之金屬鹽或銨鹽、氨、氫氧化鈉、氫氧化鉀、胺等成分B以外之鹼性物質。[PH value of detergent composition] The cleaning agent composition of the present invention is preferably alkaline in terms of improving the removability of flux residues, for example, a pH value of 8 or more and a pH value of 14 or less. The pH value can be adjusted by appropriately blending the following as needed, namely: inorganic acids such as nitric acid and sulfuric acid; organic acids such as hydroxycarboxylic acids, polycarboxylic acids, amino polycarboxylic acids, and amino acids; and These metal salts or ammonium salts, ammonia, sodium hydroxide, potassium hydroxide, amines and other alkaline substances other than component B.
[被清潔物] 本發明之清潔劑組合物係用於具有助焊劑殘餘物之被清潔物之清潔。作為具有助焊劑殘餘物之被清潔物,例如可列舉具有經回焊之焊料之被清潔物。作為被清潔物之具體例,例如可列舉電子零件及其製造中間物,具體而言,可列舉焊接電子零件及其製造中間物,更具體而言,可列舉:以焊料焊接有零件之電子零件及其製造中間物,經由焊料而連接有零件之電子零件及其製造中間物、於經焊接之零件之間隙包含助焊劑殘餘物之電子零件及其製造中間物、於經由焊料而連接之零件之間隙包含助焊劑殘餘物之電子零件及其製造中間物等。上述製造中間物係包含半導體封裝體或半導體裝置之電子零件之製造步驟中之中間製造物,例如包含藉由使用助焊劑之焊接而搭載有選自半導體晶片、晶片型電容器及電路基板中之至少一種零件之電路基板,及/或形成有用於焊料連接上述零件之焊料凸塊之電路基板。所謂被清潔物中之間隙例如係指形成於電路基板與焊接搭載在該電路基板之零件(半導體晶片、晶片型電容器、電路基板等)之間之空間,且係其高度(零件間之距離)例如為5~500 μm、10~250 μm、或20~100 μm之空間。間隙之寬度及深度係依存於所搭載之零件或電路基板上之電極(焊墊)之大小或間隔。[Object to be cleaned] The cleaning agent composition of the present invention is used for cleaning objects to be cleaned with flux residues. As an object to be cleaned with flux residue, for example, an object to be cleaned with reflowed solder can be cited. As a specific example of the object to be cleaned, for example, electronic parts and their manufacturing intermediates can be cited, specifically, soldered electronic parts and manufacturing intermediates thereof can be cited, and more specifically, include: electronic parts with parts soldered with solder And its manufacturing intermediates, electronic parts with parts connected via solder and their manufacturing intermediates, electronic parts containing flux residues in the gaps between soldered parts and their manufacturing intermediates, between parts connected via solder Electronic parts and manufacturing intermediates containing flux residue in the gap. The above-mentioned manufacturing intermediate is the intermediate manufacturing in the manufacturing steps of electronic parts including semiconductor packages or semiconductor devices. For example, it includes mounting at least selected from the group consisting of semiconductor chips, chip capacitors, and circuit substrates by soldering using flux A circuit substrate of a component, and/or a circuit substrate formed with solder bumps for soldering the above components. The so-called gap in the object to be cleaned refers to, for example, the space formed between the circuit board and the parts (semiconductor chip, chip capacitor, circuit board, etc.) soldered and mounted on the circuit board, and is the height (the distance between the parts) For example, it is a space of 5 to 500 μm, 10 to 250 μm, or 20 to 100 μm. The width and depth of the gap depend on the size or spacing of the mounted parts or electrodes (welding pads) on the circuit board.
[清潔方法] 本發明於一態樣中係關於一種包括使具有助焊劑殘餘物之被清潔物與本發明之清潔劑組合物接觸之用於除去助焊劑殘餘物的清潔方法(以下,亦稱為「本發明之清潔方法」)。本發明之清潔方法於一個或複數個實施形態中,包括利用本發明之清潔劑組合物對具有助焊劑殘餘物之被清潔物進行清潔之步驟。作為使本發明之清潔劑組合物與被清潔物接觸之方法、或利用本發明之清潔劑組合物對被清潔物進行清潔之方法,例如可列舉於超音波清潔裝置之浴槽內進行接觸之方法、將清潔劑組合物呈噴霧狀射出而進行接觸之方法(噴淋方式)等。本發明之清潔劑組合物可不進行稀釋而直接用於清潔。本發明之清潔方法較佳為包括於使被清潔物與清潔劑組合物接觸之後利用水沖洗並進行乾燥之步驟。根據本發明之清潔方法,可效率良好地清潔殘存於經焊接之零件之間隙之助焊劑殘餘物。就本發明之清潔方法之清潔性及向狹窄間隙之滲透性的顯著效果顯現之方面而言,焊料較佳為無鉛(Pb)焊料。進而,就同樣之觀點而言,本發明之清潔方法較佳為用於使用國際公開第2006/025224號、日本專利特公平6-75796號公報、日本專利特開2014-144473號公報、日本專利特開2004-230426號公報、日本專利特開2013-188761號公報、日本專利特開2013-173184號公報等中記載之助焊劑所焊料連接之電子零件。本發明之清潔方法就容易發揮本發明之清潔劑組合物之清潔力之方面而言,較佳為於本發明之清潔劑組合物與被清潔物之接觸時照射超音波,更佳為該超音波相對較強。作為上述超音波之頻率,就同樣之觀點而言,較佳為26~72 Hz、80~1500 W,更佳為36~72 Hz、80~1500 W。[Cleaning method] In one aspect, the present invention relates to a cleaning method for removing flux residues (hereinafter, also referred to as "the present invention"), which includes contacting an object to be cleaned with flux residues with the cleaning agent composition of the present invention. The cleaning method"). In one or more embodiments, the cleaning method of the present invention includes the step of using the cleaning agent composition of the present invention to clean the object to be cleaned with flux residue. As a method of contacting the cleaning agent composition of the present invention with the object to be cleaned, or a method of cleaning the object to be cleaned using the cleaning agent composition of the present invention, for example, a method of contacting in the bath of an ultrasonic cleaning device can be cited , The method of spraying the detergent composition into a spray and contacting it (spraying method), etc. The detergent composition of the present invention can be directly used for cleaning without dilution. The cleaning method of the present invention preferably includes a step of rinsing with water and drying after contacting the object to be cleaned with the detergent composition. According to the cleaning method of the present invention, the flux residue remaining in the gap of the welded parts can be cleaned efficiently. The solder is preferably lead-free (Pb) solder in terms of the obvious effect of the cleaning performance and the permeability into the narrow gap of the cleaning method of the present invention. Furthermore, from the same point of view, the cleaning method of the present invention is preferably used for the use of International Publication No. 2006/025224, Japanese Patent Publication No. 6-75796, Japanese Patent Application Publication No. 2014-144473, and Japanese Patent Electronic components connected with flux described in JP 2004-230426, JP 2013-188761, JP 2013-173184, etc. In the cleaning method of the present invention, in terms of easily exerting the cleaning power of the detergent composition of the present invention, it is preferable to irradiate ultrasonic waves when the detergent composition of the present invention is in contact with the object to be cleaned, more preferably the super The sound wave is relatively strong. From the same viewpoint, the frequency of the ultrasonic wave is preferably 26 to 72 Hz, 80 to 1500 W, and more preferably 36 to 72 Hz, and 80 to 1500 W.
[電子零件之製造方法] 本發明於一態樣中係關於一種電子零件之製造方法(以下,亦稱為「本發明之電子零件之製造方法」),其包括如下步驟:選自將選自半導體晶片、晶片型電容器及電路基板中之至少一種零件藉由使用助焊劑之焊接而搭載於電路基板上之步驟以及將用於連接上述零件等之焊料凸塊形成於電路基板上之步驟中的至少一個步驟;及藉由本發明之清潔方法對選自搭載有上述零件之電路基板及形成有上述焊料凸塊之電路基板中之至少一種進行清潔之步驟。使用助焊劑之焊接例如為利用無鉛焊料進行者,可為回焊方式,亦可為流焊方式。電子零件包含未搭載半導體晶片之半導體封裝體、搭載有半導體晶片之半導體封裝體及半導體裝置。本發明之電子零件之製造方法藉由進行本發明之清潔方法,殘存於經焊接之零件之間隙或焊料凸塊之周邊等之助焊劑殘餘物得以減少,從而抑制因助焊劑殘餘物殘留所引起之電極間之短路或接著不良,因此可製造可靠性較高之電子零件。進而,藉由進行本發明之清潔方法,殘存於經焊接之零件之間隙等之助焊劑殘餘物之清潔變得容易,因此可使清潔時間縮短,從而可提高電子零件之製造效率。[Method of manufacturing electronic parts] In one aspect, the present invention relates to a method of manufacturing electronic components (hereinafter, also referred to as "the manufacturing method of electronic components of the present invention"), which includes the following steps: selected from semiconductor chips, chip capacitors and At least one of the steps of mounting at least one component in the circuit board on the circuit board by soldering using flux and the step of forming solder bumps for connecting the above-mentioned components on the circuit board; and by this The cleaning method of the invention is a step of cleaning at least one selected from a circuit board on which the above-mentioned components are mounted and a circuit board on which the solder bumps are formed. The soldering using flux is, for example, a lead-free solder, which may be a reflow method or a flow soldering method. Electronic parts include semiconductor packages without semiconductor chips, semiconductor packages with semiconductor chips, and semiconductor devices. The manufacturing method of the electronic component of the present invention reduces the flux residue remaining in the gap of the soldered component or the periphery of the solder bump by performing the cleaning method of the present invention, thereby suppressing the residue caused by the flux residue There is a short circuit between the electrodes or poor connection, so it is possible to manufacture electronic parts with higher reliability. Furthermore, by performing the cleaning method of the present invention, the cleaning of the flux residue remaining in the gap of the soldered parts, etc. becomes easy, so the cleaning time can be shortened, and the manufacturing efficiency of electronic parts can be improved.
[套組] 本發明於一態樣中係關於一種用於本發明之清潔方法及/或本發明之電子零件之製造方法之套組(以下,亦稱為「本發明之套組」)。本發明之套組於一個或複數個實施形態中係用於製造本發明之清潔劑組合物之套組。[Set] In one aspect, the present invention relates to a kit used in the cleaning method of the present invention and/or the manufacturing method of the electronic component of the present invention (hereinafter, also referred to as "the kit of the present invention"). The kit of the present invention is used in one or more embodiments to manufacture the kit of the detergent composition of the present invention.
作為本發明之套組之一實施形態,可列舉以互不混合之狀態包含含有上述成分A之溶液(第1液)、與含有成分B及成分C之溶液(第2液),且於使用時混合第1液與第2液之套組(二液型清潔劑組合物)。上述第1液及第2液中亦可分別視需要含有上述成分D及其他成分。上述第1液及第2液之至少一者於一個或複數個實施形態中可含有成分D(水)之一部分或全部。於一個或複數個實施形態中,亦可於混合上述第1液與第2液後,視需要利用成分D(水)進行稀釋。As an embodiment of the kit of the present invention, a solution containing the above-mentioned component A (first solution), and a solution containing component B and component C (second solution) in an immiscible state can be mentioned, and used When mixing the first liquid and the second liquid set (two-component detergent composition). The said 1st liquid and the said 2nd liquid may contain the said component D and other components as needed, respectively. At least one of the above-mentioned first liquid and second liquid may contain part or all of component D (water) in one or more embodiments. In one or more embodiments, after mixing the above-mentioned first liquid and second liquid, it may be diluted with component D (water) as necessary.
本發明進而關於以下之一個或複數個實施形態。 <1>一種助焊劑殘餘物除去用清潔劑組合物,其係含有溶劑(成分A)、 漢森溶解度參數之極性項(δp)為7.8以下之胺(成分B)、及 下述式(VI)所表示之二膦酸(成分C),或調配成分A、成分B及成分C而成。 [化6] 上述式(VI)中,X為碳數1以上6以下之伸烷基或羥基伸烷基。The present invention further relates to one or more of the following embodiments. <1> A cleaning composition for removing flux residues, which contains a solvent (component A), an amine (component B) whose polarity term (δp) of the Hansen solubility parameter is 7.8 or less, and the following formula (VI The bisphosphonic acid (component C) represented by ), or component A, component B, and component C. [化6] In the above formula (VI), X is an alkylene group or hydroxyalkylene group having a carbon number of 1 or more and 6 or less.
<2>如<1>之清潔劑組合物,其中溶劑(成分A)係選自下述式(I)所表示之化合物、下述式(II)所表示之化合物及下述式(III)所表示之化合物中之至少一種溶劑。 R1 -O-(AO)n -R2 (I) 上述式(I)中,R1 為苯基或碳數1以上8以下之烷基,R2 為氫原子或碳數1以上4以下之烷基,AO為環氧乙烷基或環氧丙烷基,n為AO之加成莫耳數且為1以上3以下之整數。 R3 -CH2 OH (II) 上述式(II)中,R3 為苯基、苄基、環己基、呋喃基、四氫呋喃基、呋喃甲基或四氫呋喃甲基。 [化7] 上述式(III)中,R4 、R5 、R6 、R7 分別獨立為氫原子、碳數1以上8以下之烴基、碳數1以上3以下之羥烷基或羥基。 <3>如<2>之清潔劑組合物,其中上述式(I)中,R1 為苯基或碳數1以上8以下之烷基,較佳為苯基或碳數4以上6以下之烷基,更佳為碳數4以上6以下之烷基。 <4>如<2>或<3>之清潔劑組合物,其中上述式(I)中,R2 為氫原子或碳數1以上4以下之烷基,較佳為氫原子或碳數2以上4以下之烷基,更佳為氫原子或正丁基。 <5>如<2>至<4>中任一項之清潔劑組合物,其中上述式(I)中,AO為環氧乙烷基或環氧丙烷基,較佳為環氧乙烷基。 <6>如<2>至<5>中任一項之清潔劑組合物,其中上述式(I)中,n為1以上3以下之整數,較佳為1或2,更佳為2。 <7>如<2>至<6>中任一項之清潔劑組合物,其中上述式(II)中,R3 為苯基、苄基、環己基、呋喃基、四氫呋喃基、呋喃甲基或四氫呋喃甲基,較佳為苯基、環己基或四氫呋喃基,更佳為苯基或四氫呋喃基。 <8>如<2>至<7>中任一項之清潔劑組合物,其中上述式(III)中,R4 、R5 、R6 、R7 分別獨立為氫原子、碳數1以上8以下之烴基、碳數1以上3以下之羥烷基或羥基,較佳為R4 、R5 、R6 、R7 之任一者為碳數1以上8以下之烴基,更佳為碳數1以上6以下之烴基,進而較佳為甲基、乙基、乙烯基之任一者。 <9>如<2>至<8>中任一項之清潔劑組合物,其中成分A為式(I)所表示之化合物與式(II)所表示之化合物之組合。 <10>如<1>至<8>中任一項之清潔劑組合物,其中成分A較佳為選自二乙二醇單丁醚、二丙二醇單丁醚、二乙二醇二丁醚、苄醇、四氫呋喃甲醇及1-甲基-2-吡咯啶酮中之至少一種,更佳為選自二乙二醇單丁醚、苄醇、四氫呋喃甲醇及1-甲基-2-吡咯啶酮中之至少一種。 <11>如<1>至<10>中任一項之清潔劑組合物,其中成分A之含量較佳為70質量%以上,更佳為75質量%以上,進而較佳為78質量%以上。 <12>如<1>至<11>中任一項之清潔劑組合物,其中成分A之含量較佳為99.5質量%以下,更佳為95質量%以下,進而較佳為90質量%以下。 <13>如<1>至<12>中任一項之清潔劑組合物,其中成分A之含量較佳為70質量%以上99.5質量%以下,更佳為75質量%以上95質量%以下,進而較佳為78質量%以上90質量%以下。 <14>如<1>至<13>中任一項之清潔劑組合物,其中胺(成分B)為下述式(IV)或(V)所表示之胺。 [化8] 上述式(IV)中,R8 為氫原子、碳數1以上6以下之烷基、苯基、苄基、羥乙基或羥丙基,R9 及R10 分別獨立為碳數1以上6以下之烷基、羥乙基或羥丙基。 [化9] 上述式(V)中,R11 為碳數1以上4以下之烷基,R12 為氫原子或甲基。 <15>如<1>至<14>中任一項之清潔劑組合物,其中成分B較佳為選自二丁基單乙醇胺、丁基二乙醇胺、二異丙醇胺、二甲基苄基胺、1,2-二甲基咪唑及1-異丁基-2-甲基咪唑中之至少一種,更佳為選自二丁基單乙醇胺、二甲基苄基胺及1-異丁基-2-甲基咪唑中之至少一種,進而較佳為選自二丁基單乙醇胺及二甲基苄基胺中之至少一種。 <16>如<1>至<15>中任一項之清潔劑組合物,其中成分B之含量較佳為0.2質量%以上,更佳為0.3質量%以上,進而較佳為0.4質量%以上,進而更佳為0.5質量%以上。 <17>如<1>至<16>中任一項之清潔劑組合物,其中成分B之含量較佳為15質量%以下,更佳為10質量%以下,進而較佳為5質量%以下,進而更佳為3質量%以下。 <18>如<1>至<17>中任一項之清潔劑組合物,其中成分B之含量較佳為0.2質量%以上15質量%以下,更佳為0.3質量%以上10質量%以下,進而較佳為0.4質量%以上5質量%以下,進而更佳為0.5質量%以上3質量%以下。 <19>如<1>至<18>中任一項之清潔劑組合物,其中成分A與成分B之質量比(A/B)較佳為5以上,更佳為8以上,進而較佳為10以上。 <20>如<1>至<19>中任一項之清潔劑組合物,其中成分A與成分B之質量比(A/B)較佳為60以下,更佳為45以下,進而較佳為20以下。 <21>如<1>至<20>中任一項之清潔劑組合物,其中成分A與成分B之質量比(A/B)較佳為5以上60以下,更佳為8以上45以下,進而較佳為10以上20以下。 <22>如<1>至<21>中任一項之清潔劑組合物,其中上述式(VI)中,X為碳數1以上6以下之伸烷基或羥基伸烷基,較佳為羥基伸烷基。 <23>如<1>至<22>中任一項之清潔劑組合物,其中上述式(VI)中,X之碳數較佳為1以上4以下,更佳為1以上2以下。 <24>如<1>至<23>中任一項之清潔劑組合物,其中成分C較佳為選自1-羥基亞乙基-1,1-二膦酸、亞甲基二膦酸、1,2-伸乙基二膦酸、1,3-伸丙基二膦酸、1,4-伸丁基二膦酸、1,5-伸戊基二膦酸及1,6-伸己基二膦酸中之至少一種二膦酸,更佳為選自1-羥基亞乙基-1,1-二膦酸及亞甲基二膦酸中之至少一種二膦酸,進而較佳為1-羥基亞乙基-1,1-二膦酸。 <25>如<1>至<24>中任一項之清潔劑組合物,成分C之含量較佳為0.1質量%以上,更佳為0.3質量%以上,進而較佳為0.5質量%以上。 <26>如<1>至<25>中任一項之清潔劑組合物,其中成分C之含量較佳為3質量%以下,更佳為2質量%以下,進而較佳為1.5質量%以下,進而更佳為1質量%以下。 <27>如<1>至<26>中任一項之清潔劑組合物,其中成分C之含量較佳為0.1質量%以上3質量%以下,更佳為0.3質量%以上2質量%以下,進而較佳為0.3質量%以上1.5質量%以下,進而更佳為0.5質量%以上1質量%以下。 <28>如<1>至<27>中任一項之清潔劑組合物,其中成分A之含量為70質量%以上99.5質量%以下,成分B之含量為0.2質量%以上15質量%以下,成分C之含量為0.1質量%以上3質量%以下。 <29>如<1>至<28>中任一項之清潔劑組合物,其中成分B與成分C之莫耳比B/C較佳為4以上,更佳為4.5以上,進而較佳為4.8以上,進而更佳為7以上,進一步更佳為10以上。 <30>如<1>至<29>中任一項之清潔劑組合物,其中成分B與成分C之莫耳比B/C較佳為40以下,更佳為30以下,進而較佳為25以下,進而更佳為22以下,進一步更佳為18以下。 <31>如<1>至<30>中任一項之清潔劑組合物,其中成分B與成分C之莫耳比B/C較佳為4以上40以下,更佳為4.5以上30以下,進而較佳為4.8以上25以下,進而更佳為7以上22以下,進一步更佳為10以上18以下。 <32>如<1>至<31>中任一項之清潔劑組合物,其中成分B之至少一部分與成分C形成鹽,且成分B之至少一部分未與成分C形成鹽。 <33>如<32>之清潔劑組合物,其中成分B與成分C之鹽之含量較佳為0.1質量%以上,更佳為0.3質量%以上,進而較佳為0.7質量%以上。 <34>如<32>或<33>之清潔劑組合物,其中成分B與成分C之鹽之含量較佳為10質量%以下,更佳為5質量%以下,進而較佳為3質量%以下。 <35>如<32>至<34>中任一項之清潔劑組合物,其中成分B與成分C之鹽之含量較佳為0.1質量%以上10量%以下,更佳為0.3質量%以上5質量%以下,進而較佳為0.7質量%以上3質量%以下。 <36>如<1>至<35>中任一項之清潔劑組合物,其進而含有水(成分D)。 <37>如<36>之清潔劑組合物,其中成分D之含量較佳為1質量%以上,更佳為5質量%以上,進而較佳為8質量%以上。 <38>如<36>或<37>之清潔劑組合物,其中成分D之含量較佳為20質量%以下,更佳為15質量%以下,進而較佳為10質量%以下。 <39>如<36>至<38>中任一項之清潔劑組合物,其中成分D之含量較佳為1質量%以上20質量%以下,更佳為5質量%以上15質量%以下,進而較佳為8質量%以上10質量%以下。 <40>如<1>至<39>中任一項之清潔劑組合物,其進而含有界面活性劑(成分E)。 <41>如<1>至<40>中任一項之清潔劑組合物,其進而含有選自具有螯合力之化合物、苯并三唑等防銹劑、增黏劑、分散劑、成分B以外之鹼性物質、高分子化合物、助溶劑、防腐劑、殺菌劑、抗菌劑、消泡劑、及抗氧化劑中之至少一種。 <42>一種清潔方法,其包括利用如<1>至<41>中任一項之清潔劑組合物對具有助焊劑殘餘物之被清潔物進行清潔之步驟。 <43>如<42>之清潔方法,其中被清潔物為焊接電子零件之製造中間物。 <44>一種電子零件之製造方法,其包括如下步驟:選自將選自半導體晶片、晶片型電容器及電路基板中之至少一種零件藉由使用助焊劑之焊接而搭載於電路基板上之步驟以及將用於連接上述零件等之焊料凸塊形成於電路基板上之步驟中的至少一個步驟;及藉由如<42>或<43>之清潔方法對選自搭載有上述零件之電路基板及形成有上述焊料凸塊之電路基板中之至少一種進行清潔之步驟。 [實施例]<2> The detergent composition as in <1>, wherein the solvent (component A) is selected from the compound represented by the following formula (I), the compound represented by the following formula (II) and the following formula (III) At least one solvent in the represented compound. R 1 -O-(AO) n -R 2 (I) In the above formula (I), R 1 is a phenyl group or an alkyl group with a carbon number of 1 to 8 and R 2 is a hydrogen atom or a carbon number of 1 to 4 The alkyl group, AO is an ethylene oxide group or a propylene oxide group, n is the number of AO added moles and is an integer of 1 to 3. R 3 -CH 2 OH (II) In the above formula (II), R 3 is phenyl, benzyl, cyclohexyl, furanyl, tetrahydrofuranyl, furyl methyl or tetrahydrofuryl methyl. [化7] In the above formula (III), R 4 , R 5 , R 6 , and R 7 are each independently a hydrogen atom, a hydrocarbon group having 1 to 8 carbon atoms, a hydroxyalkyl group having 1 to 3 carbon atoms, or a hydroxyl group. <3> The detergent composition as in <2>, wherein in the above formula (I), R 1 is a phenyl group or an alkyl group having 1 to 8 carbon atoms, preferably a phenyl group or a carbon number of 4 to 6 The alkyl group is more preferably an alkyl group having 4 to 6 carbon atoms. <4> A detergent composition such as <2> or <3>, wherein in the above formula (I), R 2 is a hydrogen atom or an alkyl group with 1 to 4 carbon atoms, preferably a hydrogen atom or 2 carbon atoms The alkyl group of 4 or less is more preferably a hydrogen atom or an n-butyl group. <5> The detergent composition according to any one of <2> to <4>, wherein in the above formula (I), AO is an ethylene oxide group or a propylene oxide group, preferably an ethylene oxide group . <6> The detergent composition of any one of <2> to <5>, wherein in the above formula (I), n is an integer of 1 or more and 3 or less, preferably 1 or 2, and more preferably 2. <7> The detergent composition according to any one of <2> to <6>, wherein in the above formula (II), R 3 is phenyl, benzyl, cyclohexyl, furanyl, tetrahydrofuranyl, furanmethyl Or tetrahydrofuryl methyl, preferably phenyl, cyclohexyl or tetrahydrofuryl, more preferably phenyl or tetrahydrofuryl. <8> The detergent composition according to any one of <2> to <7>, wherein in the above formula (III), R 4 , R 5 , R 6 , and R 7 are each independently a hydrogen atom with a carbon number of 1 or more A hydrocarbon group of 8 or less, a hydroxyalkyl group or a hydroxy group having a carbon number of 1 to 3, preferably any of R 4 , R 5 , R 6 , and R 7 is a hydrocarbon group of 1 to 8 carbons, more preferably carbon The hydrocarbon group having a number of 1 to 6 is more preferably any of a methyl group, an ethyl group, and a vinyl group. <9> The detergent composition according to any one of <2> to <8>, wherein component A is a combination of a compound represented by formula (I) and a compound represented by formula (II). <10> The detergent composition of any one of <1> to <8>, wherein component A is preferably selected from diethylene glycol monobutyl ether, dipropylene glycol monobutyl ether, and diethylene glycol dibutyl ether At least one of, benzyl alcohol, tetrahydrofuran methanol and 1-methyl-2-pyrrolidone, more preferably selected from diethylene glycol monobutyl ether, benzyl alcohol, tetrahydrofuran methanol and 1-methyl-2-pyrrolidine At least one of ketones. <11> The detergent composition of any one of <1> to <10>, wherein the content of component A is preferably 70% by mass or more, more preferably 75% by mass or more, and still more preferably 78% by mass or more . <12> The detergent composition of any one of <1> to <11>, wherein the content of component A is preferably 99.5% by mass or less, more preferably 95% by mass or less, and even more preferably 90% by mass or less . <13> The detergent composition of any one of <1> to <12>, wherein the content of Component A is preferably 70% by mass to 99.5% by mass, more preferably 75% by mass to 95% by mass, More preferably, it is 78% by mass or more and 90% by mass or less. <14> The detergent composition according to any one of <1> to <13>, wherein the amine (component B) is an amine represented by the following formula (IV) or (V). [化8] In the above formula (IV), R 8 is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, phenyl, benzyl, hydroxyethyl or hydroxypropyl, and R 9 and R 10 are each independently a carbon number of 1 or more and 6 The following is alkyl, hydroxyethyl or hydroxypropyl. [化9] In the above formula (V), R 11 is an alkyl group having 1 to 4 carbon atoms, and R 12 is a hydrogen atom or a methyl group. <15> The detergent composition according to any one of <1> to <14>, wherein component B is preferably selected from dibutyl monoethanolamine, butyl diethanolamine, diisopropanolamine, dimethyl benzyl At least one of amine, 1,2-dimethylimidazole and 1-isobutyl-2-methylimidazole, more preferably selected from dibutylmonoethanolamine, dimethylbenzylamine and 1-isobutyl At least one selected from the group consisting of 2-methylimidazole, and more preferably at least one selected from dibutylmonoethanolamine and dimethylbenzylamine. <16> The detergent composition of any one of <1> to <15>, wherein the content of component B is preferably 0.2% by mass or more, more preferably 0.3% by mass or more, and still more preferably 0.4% by mass or more , And more preferably 0.5% by mass or more. <17> The detergent composition according to any one of <1> to <16>, wherein the content of component B is preferably 15% by mass or less, more preferably 10% by mass or less, and still more preferably 5% by mass or less , And more preferably 3% by mass or less. <18> The detergent composition of any one of <1> to <17>, wherein the content of component B is preferably 0.2% by mass to 15% by mass, more preferably 0.3% by mass to 10% by mass, It is more preferably 0.4% by mass or more and 5% by mass or less, and still more preferably 0.5% by mass or more and 3% by mass or less. <19> The detergent composition of any one of <1> to <18>, wherein the mass ratio (A/B) of component A to component B is preferably 5 or more, more preferably 8 or more, and more preferably Is 10 or more. <20> The detergent composition of any one of <1> to <19>, wherein the mass ratio (A/B) of component A to component B is preferably 60 or less, more preferably 45 or less, and more preferably Below 20. <21> The detergent composition of any one of <1> to <20>, wherein the mass ratio (A/B) of component A to component B is preferably 5 or more and 60 or less, more preferably 8 or more and 45 or less , More preferably 10 or more and 20 or less. <22> The detergent composition according to any one of <1> to <21>, wherein in the above formula (VI), X is an alkylene or hydroxyalkylene having 1 to 6 carbon atoms, preferably Hydroxy alkylene. <23> The detergent composition of any one of <1> to <22>, wherein in the above formula (VI), the carbon number of X is preferably 1 or more and 4 or less, more preferably 1 or more and 2 or less. <24> The detergent composition of any one of <1> to <23>, wherein component C is preferably selected from 1-hydroxyethylene-1,1-diphosphonic acid, methylene diphosphonic acid , 1,2-Ethylene diphosphonic acid, 1,3-Ethylene diphosphonic acid, 1,4-Ethylene diphosphonic acid, 1,5-Ethylene diphosphonic acid and 1,6-Ethylene diphosphonic acid At least one diphosphonic acid among hexyl diphosphonic acids, more preferably at least one diphosphonic acid selected from 1-hydroxyethylene-1,1-diphosphonic acid and methylene diphosphonic acid, and more preferably 1-Hydroxyethylene-1,1-diphosphonic acid. <25> In the detergent composition of any one of <1> to <24>, the content of Component C is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, and still more preferably 0.5% by mass or more. <26> The detergent composition of any one of <1> to <25>, wherein the content of component C is preferably 3% by mass or less, more preferably 2% by mass or less, and even more preferably 1.5% by mass or less , And more preferably 1% by mass or less. <27> The detergent composition of any one of <1> to <26>, wherein the content of component C is preferably 0.1% by mass to 3% by mass, more preferably 0.3% by mass to 2% by mass, It is more preferably 0.3% by mass or more and 1.5% by mass or less, and still more preferably 0.5% by mass or more and 1% by mass or less. <28> The detergent composition according to any one of <1> to <27>, wherein the content of component A is 70% by mass to 99.5% by mass, and the content of component B is 0.2% by mass to 15% by mass, The content of component C is 0.1% by mass to 3% by mass. <29> The detergent composition of any one of <1> to <28>, wherein the molar ratio B/C of component B and component C is preferably 4 or more, more preferably 4.5 or more, and more preferably It is 4.8 or more, more preferably 7 or more, and still more preferably 10 or more. <30> The detergent composition of any one of <1> to <29>, wherein the molar ratio B/C of component B and component C is preferably 40 or less, more preferably 30 or less, and more preferably It is 25 or less, more preferably 22 or less, and still more preferably 18 or less. <31> The detergent composition of any one of <1> to <30>, wherein the molar ratio B/C of component B and component C is preferably 4 or more and 40 or less, more preferably 4.5 or more and 30 or less, It is more preferably 4.8 or more and 25 or less, still more preferably 7 or more and 22 or less, and still more preferably 10 or more and 18 or less. <32> The detergent composition according to any one of <1> to <31>, wherein at least a part of component B and component C form a salt, and at least a part of component B does not form a salt with component C. <33> The detergent composition as in <32>, wherein the content of the salt of component B and component C is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, and even more preferably 0.7% by mass or more. <34> The detergent composition of <32> or <33>, wherein the content of the salt of component B and component C is preferably 10% by mass or less, more preferably 5% by mass or less, and more preferably 3% by mass the following. <35> The detergent composition of any one of <32> to <34>, wherein the content of the salt of component B and component C is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.3% by mass or more 5 mass% or less, more preferably 0.7 mass% or more and 3 mass% or less. <36> The detergent composition of any one of <1> to <35>, which further contains water (component D). <37> The detergent composition as in <36>, wherein the content of component D is preferably 1% by mass or more, more preferably 5% by mass or more, and still more preferably 8% by mass or more. <38> The detergent composition as in <36> or <37>, wherein the content of component D is preferably 20% by mass or less, more preferably 15% by mass or less, and still more preferably 10% by mass or less. <39> The detergent composition of any one of <36> to <38>, wherein the content of component D is preferably 1% by mass to 20% by mass, more preferably 5% by mass to 15% by mass, More preferably, it is 8 mass% or more and 10 mass% or less. <40> The detergent composition of any one of <1> to <39>, which further contains a surfactant (component E). <41> The detergent composition of any one of <1> to <40>, which further contains a compound selected from chelating power, rust inhibitors such as benzotriazole, thickener, dispersant, and component B At least one of other alkaline substances, polymer compounds, cosolvents, preservatives, bactericides, antibacterial agents, defoamers, and antioxidants. <42> A cleaning method, which includes the step of using the cleaning agent composition of any one of <1> to <41> to clean the object to be cleaned with flux residue. <43> The cleaning method as in <42>, wherein the object to be cleaned is a manufacturing intermediate for welding electronic parts. <44> A method of manufacturing electronic components, comprising the steps of: mounting at least one component selected from the group consisting of semiconductor chips, chip capacitors, and circuit substrates on the circuit substrate by soldering using flux; and At least one of the steps of forming solder bumps for connecting the above-mentioned parts on a circuit board; and forming a circuit board selected from the above-mentioned parts by a cleaning method such as <42> or <43> The step of cleaning at least one of the circuit substrates with the above-mentioned solder bumps. [Example]
以下,利用實施例對本發明進行具體說明,但本發明並不受該等實施例任何限定。Hereinafter, the present invention will be described in detail with examples, but the present invention is not limited by these examples.
1.清潔劑組合物之製備(實施例1~18、比較例1~10) 於100 mL玻璃燒杯中,以成為下述表2中記載之組成之方式調配各成分,且於下述條件下進行混合,藉此製備實施例1~18及比較例1~10之清潔劑組合物。表2中之各成分之數值只要無特別事先說明,則表示所製備之清潔劑組合物中之含量(質量%)。 <混合條件> 液體溫度:25℃ 攪拌機:磁力攪拌器(50 mm轉子) 轉速:300 rpm 攪拌時間:10分鐘1. Preparation of detergent composition (Examples 1-18, Comparative Examples 1-10) In a 100 mL glass beaker, the ingredients were blended so as to be the composition described in Table 2 below, and mixed under the following conditions to prepare the detergent combinations of Examples 1-18 and Comparative Examples 1-10 Things. Unless otherwise specified, the numerical value of each component in Table 2 means the content (mass %) in the prepared detergent composition. <Mixed conditions> Liquid temperature: 25℃ Stirrer: Magnetic stirrer (50 mm rotor) Speed: 300 rpm Stirring time: 10 minutes
使用下述者作為清潔劑組合物之成分。 (成分A) A1:四氫呋喃甲醇[富士膠片和光純藥股份有限公司製造] A2:二乙二醇單丁醚[日本乳化劑股份有限公司製造,二乙二醇丁醚(BDG)] A3:二丙二醇單丁醚[日本乳化劑股份有限公司製造,二丙二醇丁醚(BFDG)] A4:二乙二醇二丁醚[日本乳化劑股份有限公司製造,二乙二醇二丁醚(DBDG)] A5:1-甲基-2-吡咯啶酮[富士膠片和光純藥股份有限公司製造] A6:苄醇[Lanxess股份有限公司製造] (成分B) B1:N,N-二丁基單乙醇胺[日本乳化劑股份有限公司製造,胺基醇2B] B2:N,N-二甲基苄基胺[花王股份有限公司製造,Kaolizer No.20] B3:1,2-二甲基咪唑[東京化成工業股份有限公司製造] B4:1-異丁基-2-甲基咪唑[花王股份有限公司製造,Kaolizer No.120] B5:二異丙醇胺[三井精細化學股份有限公司製造,二異丙醇胺(DIPA)] B6:N-正丁基二乙醇胺[日本乳化劑股份有限公司製造,胺基醇MBD] (非成分B) B7:三乙醇胺[日本觸媒股份有限公司製造] B8:甲基二乙醇胺[日本乳化劑股份有限公司製造,胺基醇MDA] B9:2-乙基-4-甲基咪唑[富士膠片和光純藥股份有限公司製造] B10:2-甲基咪唑[富士膠片和光純藥股份有限公司製造] B11:單乙醇胺[日本觸媒股份有限公司製造] (成分C) C1:1-羥基亞乙基-1,1-二膦酸[Italmatch Japan股份有限公司製造,Dequest 2010,固形物成分為60質量%] C2:亞甲基二膦酸[富士膠片和光純藥股份有限公司製造] (成分D) 水[利用Organo股份有限公司製造之純水裝置G-10DSTSET所製造之1 μS/cm以下之純水] (成分E) E1:聚氧乙烯癸醚[BASF公司製造,Lutensol XL40,碳數10之吉布特醇環氧乙烷平均4莫耳加成物] E2:2-乙基己基甘油醚(利用下述製造方法製造) 將2-乙基己醇130 g及三氟化硼醚錯合物2.84 g一面攪拌一面冷卻至0℃。一面將溫度保持於0℃,一面將表氯醇138.8 g以1小時滴下。滴下結束後,於減壓下(13~26 Pa)且於100℃下蒸餾去除剩餘之醇。將該反應混合物冷卻至50℃,一面保持50℃一面將48%氫氧化鈉水溶液125 g以1小時滴下,攪拌3小時之後,添加200 mL之水以使之分層。去除水層之後,進而利用100 mL之水洗淨2次,而獲得208 g之粗2-乙基己基縮水甘油醚。將該粗2-乙基己基縮水甘油醚208 g、水104.8 g、月桂酸5.82 g及氫氧化鉀18.5 g加入至高壓釜,於140℃下攪拌5小時。於減壓下(6.67 kPa)且於100℃下脫水後,添加月桂酸9.7 g及氫氧化鉀2.72 g,於160℃下反應15小時,其後利用減壓蒸餾(53~67 Pa,120~123℃)進行精製,而獲得110.2 g之2-乙基己基甘油醚。 (其他成分) 苯并三唑[東京化成工業股份有限公司製造,1,2,3-苯并三唑]The following are used as components of the detergent composition. (Ingredient A) A1: Tetrahydrofuran methanol [manufactured by Fujifilm Wako Pure Chemical Co., Ltd.] A2: Diethylene glycol monobutyl ether [manufactured by Japan Emulsifier Co., Ltd., diethylene glycol butyl ether (BDG)] A3: Dipropylene glycol monobutyl ether [manufactured by Japan Emulsifier Co., Ltd., dipropylene glycol butyl ether (BFDG)] A4: Diethylene glycol dibutyl ether [manufactured by Japan Emulsifier Co., Ltd., diethylene glycol dibutyl ether (DBDG)] A5: 1-Methyl-2-pyrrolidone [manufactured by Fujifilm Wako Pure Chemical Co., Ltd.] A6: Benzyl alcohol [manufactured by Lanxess Co., Ltd.] (Ingredient B) B1: N,N-Dibutylmonoethanolamine [manufactured by Japan Emulsifier Co., Ltd., amino alcohol 2B] B2: N,N-dimethylbenzylamine [manufactured by Kao Co., Ltd., Kaolizer No.20] B3: 1,2-Dimethylimidazole [manufactured by Tokyo Chemical Industry Co., Ltd.] B4: 1-isobutyl-2-methylimidazole [manufactured by Kao Co., Ltd., Kaolizer No.120] B5: Diisopropanolamine [manufactured by Mitsui Fine Chemicals Co., Ltd., diisopropanolamine (DIPA)] B6: N-n-butyldiethanolamine [manufactured by Japan Emulsifier Co., Ltd., amino alcohol MBD] (Non-component B) B7: Triethanolamine [manufactured by Nippon Shokubai Co., Ltd.] B8: Methyldiethanolamine [manufactured by Japan Emulsifier Co., Ltd., amino alcohol MDA] B9: 2-Ethyl-4-methylimidazole [manufactured by Fuji Photo Film Wako Pure Chemical Co., Ltd.] B10: 2-Methylimidazole [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.] B11: Monoethanolamine [manufactured by Nippon Shokubai Co., Ltd.] (Ingredient C) C1: 1-hydroxyethylene-1,1-diphosphonic acid [manufactured by Italmatch Japan Co., Ltd., Dequest 2010, solid content 60% by mass] C2: Methylene bisphosphonic acid [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.] (Ingredient D) Water [Pure water less than 1 μS/cm produced by G-10DSTSET, a pure water device manufactured by Organo Co., Ltd.] (Ingredient E) E1: Polyoxyethylene decyl ether [manufactured by BASF, Lutensol XL40, an average 4 mol adduct of Gibuterol ethylene oxide with carbon number 10] E2: 2-Ethylhexyl glyceryl ether (manufactured by the following manufacturing method) 130 g of 2-ethylhexanol and 2.84 g of boron trifluoride ether complex were cooled to 0°C while stirring. While keeping the temperature at 0°C, 138.8 g of epichlorohydrin was dropped over 1 hour. After the dropping, the remaining alcohol was distilled off at 100°C under reduced pressure (13~26 Pa). The reaction mixture was cooled to 50°C, 125 g of 48% sodium hydroxide aqueous solution was dropped over 1 hour while maintaining 50°C, and after stirring for 3 hours, 200 mL of water was added to separate the layers. After removing the water layer, it was washed twice with 100 mL of water to obtain 208 g of crude 2-ethylhexyl glycidyl ether. 208 g of the crude 2-ethylhexyl glycidyl ether, 104.8 g of water, 5.82 g of lauric acid, and 18.5 g of potassium hydroxide were added to the autoclave and stirred at 140° C. for 5 hours. After dehydration at 100°C under reduced pressure (6.67 kPa), 9.7 g of lauric acid and 2.72 g of potassium hydroxide were added, and reacted at 160°C for 15 hours, and then vacuum distillation (53~67 Pa, 120~ 123° C.) was refined to obtain 110.2 g of 2-ethylhexyl glyceryl ether. (Other ingredients) Benzotriazole [manufactured by Tokyo Chemical Industry Co., Ltd., 1,2,3-benzotriazole]
[胺(成分B、非成分B)之物性]
將用於清潔劑組合物之製備之胺(成分B、非成分B)之漢森溶解度參數的極性項(δp)示於表1。極性項(δp)係使用電腦用軟體「HSPiP:Hansen Solubility Parameters in Practice」而算出。
[表1]
2.清潔劑組合物之評價 [清潔劑組合物之液體狀態] 於25℃下目視觀察製備後之清潔劑組合物之液體狀態。將均勻透明者設為A,將分離且不均勻透明者設為B,將結果示於表2。A可判斷為穩定之液體狀態得到確保,B可判斷為液體狀態不穩定。2. Evaluation of detergent composition [Liquid state of detergent composition] Visually observe the liquid state of the cleansing composition after preparation at 25°C. The uniformly transparent ones were designated as A, and the separated and unevenly transparent ones were designated as B. The results are shown in Table 2. A can be judged as a stable liquid state is ensured, and B can be judged as an unstable liquid state.
[清潔性之評價] 使用所製備之實施例1~18及比較例1~10之清潔劑組合物對清潔性進行試驗並評價。[Evaluation of cleanliness] The cleansing properties were tested and evaluated using the prepared detergent compositions of Examples 1-18 and Comparative Examples 1-10.
<測試基板> 於銅配線印刷基板(10 mm×15 mm)上,使用網版塗佈下述焊膏。藉由在氮氣氛圍下以250℃進行回焊而製作測試基板。<Test board> On the copper wiring printed circuit board (10 mm×15 mm), use a screen to coat the following solder paste. The test substrate was produced by reflowing at 250°C in a nitrogen atmosphere.
<助焊劑之組成> 完全氫化松香(Eastman Chemical公司製造,Foral AX-E)58.0質量% N,N'-二苯基胍氫溴酸鹽(和光化學股份有限公司製造)0.5質量% 己二酸(和光純藥工業股份有限公司製造)0.5質量% 氫化蓖麻油(豐國製油股份有限公司製造)6.0質量% 己基二醇(日本乳化劑股份有限公司製造)35.0質量%<The composition of flux> Fully hydrogenated rosin (manufactured by Eastman Chemical Company, Foral AX-E) 58.0% by mass N,N'-Diphenylguanidine hydrobromide (manufactured by Wako Chemical Co., Ltd.) 0.5% by mass Adipic acid (manufactured by Wako Pure Chemical Industry Co., Ltd.) 0.5% by mass Hydrogenated castor oil (manufactured by Feng Guo Oil Co., Ltd.) 6.0% by mass Hexyldiol (manufactured by Japan Emulsifier Co., Ltd.) 35.0% by mass
<助焊劑之製造方法> 藉由在溶劑之己基二醇中添加剩餘之其他成分並進行溶解,而獲得上述組成之助焊劑。<The manufacturing method of flux> The flux of the above composition is obtained by adding and dissolving the remaining other components in the hexyl glycol of the solvent.
<焊膏之製造方法> 將上述助焊劑11.0 g與焊料粉末[千住金屬工業股份有限公司製造,M705(Sn/Ag/Cu=96.5/3/0.5)]89.0 g混練1小時而製備。<Method of manufacturing solder paste> 11.0 g of the above-mentioned flux and 89.0 g of solder powder [manufactured by Senju Metal Industry Co., Ltd., M705 (Sn/Ag/Cu=96.5/3/0.5)] were kneaded for 1 hour to prepare.
<清潔試驗> 清潔試驗係按以下之順序進行。 首先,於以下之條件下準備超音波清潔槽、第1沖洗槽、第2沖洗槽。超音波清潔槽係將頻率設定為40 kHz,並將輸出設為200 W。藉由在50 mL玻璃燒杯中添加各清潔劑組合物100 g,放入至超音波清潔層中並加溫至60℃而獲得。第1沖洗槽及第2沖洗槽係藉由如下方式獲得:準備兩個加入有一個50 mm轉子之100 mL玻璃燒杯並分別添加純水100 g,放入至溫浴,一面以轉速100 rpm攪拌一面加溫至40℃。 其次,利用鑷子保持測試基板並插入至上述超音波清潔槽以浸漬1分鐘。繼而,利用鑷子保持測試基板並插入至第1沖洗槽,一面以轉速100 rpm攪拌一面浸漬1分鐘。 進而,利用鑷子保持測試基板並插入至第2沖洗槽,一面以轉速100 rpm攪拌一面浸漬1分鐘。 最後,對測試基板進行氮氣沖洗並進行乾燥。<Cleaning test> The cleaning test is carried out in the following order. First, prepare the ultrasonic cleaning tank, the first washing tank, and the second washing tank under the following conditions. The ultrasonic cleaning tank sets the frequency to 40 kHz and the output to 200 W. It is obtained by adding 100 g of each detergent composition to a 50 mL glass beaker, putting it in the ultrasonic cleaning layer and heating it to 60°C. The first washing tank and the second washing tank are obtained by the following method: prepare two 100 mL glass beakers with a 50 mm rotor and add 100 g of pure water respectively, put them in the warm bath, and stir at 100 rpm. Heat to 40°C on one side. Secondly, the test substrate was held with tweezers and inserted into the above-mentioned ultrasonic cleaning tank for immersion for 1 minute. Then, the test substrate was held with tweezers and inserted into the first washing tank, and while stirring at 100 rpm, the substrate was immersed for 1 minute. Furthermore, while holding the test substrate with tweezers and inserting it into the second rinse tank, it was immersed for 1 minute while stirring at 100 rpm. Finally, the test substrate was flushed with nitrogen and dried.
<清潔性之評價(助焊劑除去性)> 清潔後,利用桌上顯微鏡Miniscope TM3030(日立高新技術股份有限公司製造)觀察測試基板,對任意之9點焊料凸塊上所殘存之助焊劑殘餘物之有無進行目視確認,計數殘存有助焊劑殘餘物之焊料凸塊之個數。將結果示於表2。 進而,利用光學顯微鏡VHX-2000(KEYENCE股份有限公司製造)觀察測試基板,對焊料凸塊附近所殘存之助焊劑殘餘物之有無進行目視確認,計數焊料凸塊附近殘存有助焊劑殘餘物之焊料凸塊之個數。將結果示於表2。<Evaluation of cleanliness (flux removal)> After cleaning, observe the test substrate with a desktop microscope Miniscope TM3030 (manufactured by Hitachi High-Tech Co., Ltd.) to visually confirm the presence or absence of residual flux residue on any 9-point solder bumps, and count the residual flux residues The number of solder bumps of the object. The results are shown in Table 2. Furthermore, the test substrate was observed with an optical microscope VHX-2000 (manufactured by KEYENCE Co., Ltd.) to visually confirm the presence or absence of flux residues remaining near the solder bumps, and count the solders with flux residues remaining near the solder bumps The number of bumps. The results are shown in Table 2.
<清潔性之評價(錫除去性)> 為了確認對於回焊時產生於焊料凸塊附近之氧化錫之清潔性,利用以下之方法評價氧化錫之溶解性及溶解後之再析出抑制性。 於50 mL玻璃燒杯中添加清潔劑組合物20 g,且添加1 g氧化錫(IV),於25℃使用攪拌子攪拌3小時。其後,將藉由離心分離使未溶解氧化錫(IV)沈澱而得之上清液利用1-甲基-2-吡咯啶酮稀釋至2倍,而獲得測定液。使用ICP(Inductively Coupled Plasma,感應耦合電漿)發光分光分析裝置(Agilent公司製造,Agilent 5110 ICP-OES)對測定液中之Sn濃度進行測定,算出向清潔劑組合物中之Sn溶解量(ppm)。將結果示於表2。<Evaluation of cleanliness (tin removal)> In order to confirm the cleanliness of tin oxide generated near the solder bumps during reflow, the following methods were used to evaluate the solubility of tin oxide and the inhibition of re-precipitation after dissolution. In a 50 mL glass beaker, 20 g of the detergent composition was added, and 1 g of tin (IV) oxide was added, and stirred with a stirring bar at 25° C. for 3 hours. After that, the supernatant liquid obtained by precipitating undissolved tin (IV) oxide by centrifugal separation was diluted twice with 1-methyl-2-pyrrolidone to obtain a measurement liquid. ICP (Inductively Coupled Plasma, Inductively Coupled Plasma) luminescence spectrometer (manufactured by Agilent, Agilent 5110 ICP-OES) was used to measure the Sn concentration in the measurement solution, and calculate the amount of Sn dissolved in the detergent composition (ppm) ). The results are shown in Table 2.
<清潔性之評價(松脂酸溶解性)> 為了確認助焊劑之親和性,利用以下之方法評價用作助焊劑之成分之松脂酸之溶解性。 於50 mL玻璃燒杯中添加清潔劑組合物100 g與松脂酸1 g,使用超音波清潔槽,於頻率設定為40 kHz且將輸出設為200 W之條件下在25℃下進行1小時超音波處理。於松脂酸溶解之情形時進而添加松脂酸1 g,並進行同樣之操作。反覆進行該操作直至松脂酸成為未溶解為止,藉此估計溶解度。溶解度越高,可評價為松香系助焊劑除去性越優異。就松香系助焊劑除去性之觀點而言,可評價為溶解度較佳為40質量%以上,更佳為50質量%以上,進而較佳為55質量%以上,進而更佳為60質量%以上。 [評價基準] A:溶解度為60質量%以上 B:溶解度為50質量%以上且未達60質量% C:溶解度為40質量%以上且未達50質量% D:溶解度未達40質量%<Evaluation of cleanliness (solubility of rosinic acid)> In order to confirm the affinity of the flux, use the following method to evaluate the solubility of rosinic acid used as a component of the flux. Add 100 g of the detergent composition and 1 g of rosinic acid to a 50 mL glass beaker, use an ultrasonic cleaning tank, set the frequency to 40 kHz and set the output to 200 W, and perform ultrasonic waves at 25°C for 1 hour deal with. When the rosinic acid is dissolved, add 1 g of rosinic acid and perform the same operation. This operation is repeated until the pinoresinic acid becomes undissolved, thereby estimating the solubility. The higher the solubility, the better the rosin-based flux removability can be evaluated. From the viewpoint of the removability of rosin-based flux, it can be evaluated that the solubility is preferably 40% by mass or more, more preferably 50% by mass or more, still more preferably 55% by mass or more, and still more preferably 60% by mass or more. [Evaluation criteria] A: The solubility is 60% by mass or more B: The solubility is 50% by mass or more and less than 60% by mass C: The solubility is more than 40% by mass and less than 50% by mass D: The solubility is less than 40% by mass
[表2]
如上述表2所示,實施例1~18之清潔劑組合物與未調配有成分A~C之至少一種之比較例1~10相比,確保穩定之液體狀態,且助焊劑除去性及錫除去性優異。進而,實施例1~9、12、14~18之清潔劑組合物之松脂酸之溶解度較高為50質量%以上,可知與實施例10~11、13相比,松香系助焊劑除去性優異。 產業上之可利用性As shown in Table 2 above, the detergent compositions of Examples 1 to 18, compared with Comparative Examples 1 to 10 in which at least one of components A to C are not blended, ensure a stable liquid state, and have flux removability and tin Excellent removability. Furthermore, the solubility of the rosinic acid of the detergent compositions of Examples 1-9, 12, 14-18 is as high as 50% by mass or more, and it can be seen that the rosin-based flux is superior in removability compared with Examples 10-11 and 13. . Industrial availability
藉由使用本發明之清潔劑組合物,可良好地進行助焊劑殘餘物之清潔,因此例如可實現電子零件之製造製程中之助焊劑殘餘物之清潔步驟的縮短化及所製造之電子零件之性能、可靠性之提高,從而可提高半導體裝置之生產性。By using the cleaning agent composition of the present invention, the cleaning of flux residues can be performed well. Therefore, for example, the cleaning steps of the flux residues in the manufacturing process of electronic parts can be shortened and the electronic parts manufactured can be shortened. Improved performance and reliability can improve the productivity of semiconductor devices.
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