KR20110124980A - Cleaning agent composition for removing solder flux - Google Patents
Cleaning agent composition for removing solder flux Download PDFInfo
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- KR20110124980A KR20110124980A KR1020100044476A KR20100044476A KR20110124980A KR 20110124980 A KR20110124980 A KR 20110124980A KR 1020100044476 A KR1020100044476 A KR 1020100044476A KR 20100044476 A KR20100044476 A KR 20100044476A KR 20110124980 A KR20110124980 A KR 20110124980A
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- 230000004907 flux Effects 0.000 title claims abstract description 78
- 239000000203 mixture Substances 0.000 title claims abstract description 48
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 41
- 239000012459 cleaning agent Substances 0.000 title abstract 3
- 150000001875 compounds Chemical class 0.000 claims abstract description 43
- -1 amine compound Chemical class 0.000 claims abstract description 25
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 17
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000008096 xylene Substances 0.000 claims abstract description 12
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 7
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 claims abstract description 4
- 125000002009 alkene group Chemical group 0.000 claims abstract description 4
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 20
- 125000004432 carbon atom Chemical group C* 0.000 claims description 19
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 9
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 6
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 4
- LJDSTRZHPWMDPG-UHFFFAOYSA-N 2-(butylamino)ethanol Chemical compound CCCCNCCO LJDSTRZHPWMDPG-UHFFFAOYSA-N 0.000 claims description 3
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 3
- BLFRQYKZFKYQLO-UHFFFAOYSA-N 4-aminobutan-1-ol Chemical compound NCCCCO BLFRQYKZFKYQLO-UHFFFAOYSA-N 0.000 claims description 3
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 claims description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 3
- PVCJKHHOXFKFRP-UHFFFAOYSA-N N-acetylethanolamine Chemical compound CC(=O)NCCO PVCJKHHOXFKFRP-UHFFFAOYSA-N 0.000 claims description 3
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 3
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims description 3
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- XWESXZZECGOXDQ-UHFFFAOYSA-N n-tert-butylhydroxylamine Chemical compound CC(C)(C)NO XWESXZZECGOXDQ-UHFFFAOYSA-N 0.000 claims description 3
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 3
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 3
- 229960004418 trolamine Drugs 0.000 claims description 3
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 14
- 238000005260 corrosion Methods 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 6
- 150000002739 metals Chemical class 0.000 abstract description 5
- 229910052709 silver Inorganic materials 0.000 abstract description 5
- 239000004332 silver Substances 0.000 abstract description 5
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 239000011133 lead Substances 0.000 abstract description 3
- 239000011135 tin Substances 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 23
- 230000008569 process Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000003599 detergent Substances 0.000 description 5
- 238000012858 packaging process Methods 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002529 flux (metallurgy) Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 230000001988 toxicity Effects 0.000 description 3
- 231100000419 toxicity Toxicity 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 2
- 238000010669 acid-base reaction Methods 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000005456 alcohol based solvent Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 1
- KZEVSDGEBAJOTK-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[5-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CC=1OC(=NN=1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O KZEVSDGEBAJOTK-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- IKOKHHBZFDFMJW-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(2-morpholin-4-ylethoxy)pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)OCCN1CCOCC1 IKOKHHBZFDFMJW-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003839 salts Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 150000003738 xylenes Chemical class 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/24—Hydrocarbons
- C11D7/247—Hydrocarbons aromatic
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
Abstract
Description
본 발명은 반도체 제조 공정 중 플립 칩 패키징 공정(Flip Chip Packaging Process)에서의 땜납 공정에 사용되는 플럭스 제거용 세정제 조성물에 관한 것이다.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flux removal detergent composition used in a soldering process in a flip chip packaging process in a semiconductor manufacturing process.
플립 칩 패키징 공정은 소형이면서 경량인 전자 제품의 제조를 위해 널리 사용되고 있다. 플립 칩 패키징 공정은 전자 부품의 크기 감소 및 포장 밀도 증가에 중요한 역할을 한다.Flip chip packaging processes are widely used for the manufacture of small, lightweight electronic products. Flip chip packaging processes play an important role in reducing the size and packaging density of electronic components.
일반적으로 플립 칩 패키징 공정은 전 공정에서 얻은 반도체 칩을 땜납에 의해 회로 기판에 전기적으로 결합시키는 단계를 포함한다. 통상 반도체 칩은 그 위에 형성된 땜납 범프(Solder Bump)에 의해 회로 기판에 전기적으로 결합된다.In general, a flip chip packaging process includes electrically bonding a semiconductor chip obtained in the previous process to a circuit board by soldering. Typically, a semiconductor chip is electrically coupled to a circuit board by solder bumps formed thereon.
땜납 범프는 회로 기판에 도포된 땜납 페이스트를 리플로우(Reflow) 시켜 형성된다.The solder bumps are formed by reflowing the solder paste applied to the circuit board.
땜납 페이스트는 땜납 분말 및 플럭스를 포함한다. 플럭스는 땜납 페이스트의 도포성(Printability)을 개선시키고, 땜납의 표면 또는 납땜되는 회로 기판 상의 산화물을 감소시키며, 땜납의 습윤성(Wettability) 및 전개성(Spreadability)을 증가시키는 역할을 한다.Solder pastes include solder powder and flux. The flux serves to improve the printability of the solder paste, reduce the oxide on the surface of the solder or the circuit board being soldered, and increase the wettability and spreadability of the solder.
이러한 플럭스는 일반적으로 로진 또는 이의 유도체 등의 베이스 수지; 유기산, 할로겐화물 등의 활성제; 및 용제 등으로 구성된다.Such fluxes are generally base resins such as rosin or derivatives thereof; Active agents such as organic acids and halides; And solvents and the like.
플럭스는 잔류시 땜납 접합의 신뢰성 및 보존 안정성 등에 악영향을 미칠 수 있으므로 땜납 공정 후에는 이의 세정을 위한 공정이 반드시 필요하다.Since the flux may adversely affect the reliability and storage stability of the solder joint when remaining, a process for cleaning thereof is necessary after the soldering process.
종래에는 플럭스 세정제로 불소계 또는 염소계 용제, 탄화 수소계 또는 알코올계 용제, 및 물 등이 사용되었다. 그러나 불소계 및 염소계 용제는 환경 문제와 인체에 대한 독성 문제가 있고, 탄화 수소계 및 알코올계 용제는 독성과 인화성 문제가 있으며, 물은 세정력이 불충분하여 더 이상 사용되기 어렵다.Conventionally, fluorine-based or chlorine-based solvents, hydrocarbon-based or alcohol-based solvents, water and the like have been used as flux cleaners. However, fluorine-based and chlorine-based solvents have environmental problems and toxicity to the human body, hydrocarbon-based and alcohol-based solvents have toxicity and flammability problems, water is insufficient cleaning ability is no longer used.
최근 대한민국 특허공개 제2008-114718호, 대한민국 특허등록 제805014호 및 대한민국 특허등록 제907568호 등을 통해, 플럭스 세정력이 우수하면서도 환경오염 및 독성의 문제가 없다고 기재된 기술들이 다수 제안되고 있으나, 여전히 땜납 범프 표면에 존재하는 플럭스 잔류물 등이 완전히 제거되지 않는 한계가 있다.
Recently, through the Republic of Korea Patent Publication No. 2008-114718, Republic of Korea Patent Registration No. 805014 and Republic of Korea Patent Registration No. 907568, a number of technologies that have excellent flux cleaning power, but no problems of environmental pollution and toxicity have been proposed, but still solder There is a limit that flux residues and the like present on the bump surface are not completely removed.
본 발명은 땜납 플럭스 잔류물의 제거력이 우수한 세정제 조성물을 제공하는 것을 목적으로 한다.It is an object of the present invention to provide a cleaning composition having excellent removal ability of solder flux residues.
본 발명은 회로 기판에 사용되는 주석, 납, 은 및 이들의 합금 등의 금속의 부식 방지에 유용한 세정제 조성물을 제공하는 것을 또 다른 목적으로 한다.
It is another object of the present invention to provide a cleaning composition useful for preventing corrosion of metals such as tin, lead, silver, and alloys thereof used in a circuit board.
1. 유기아민 화합물 0.05 내지 10중량%; 자일렌 1 내지 40중량%; 및 글리콜 에테르계 화합물 50 내지 98.95중량%를 포함하는 땜납 플럭스 제거용 세정제 조성물.1. 0.05 to 10 weight percent organic amine compound; 1 to 40% by weight of xylene; And 50 to 98.95% by weight of a glycol ether-based compound.
2. 위 1에 있어서, 유기아민 화합물은 하기 화학식 1의 화합물, 화학식 2의 화합물 또는 이들의 혼합물인 땜납 플럭스 제거용 세정제 조성물:2. According to the above 1, the organic amine compound is a compound of formula 1, a compound of formula 2 or a mixture thereof solder flux removal cleaning composition:
(식 중, R1 및 R2는 각각 수소 원자, 아세틸기, 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알칸올기이고; R3는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알콕시기이거나, 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기이며; n은 0 또는 1임),(Wherein R 1 and R 2 are each a hydrogen atom, an acetyl group, or a straight or branched chain alkyl or alkanol group having 1 to 6 carbon atoms; R 3 is a straight or branched chain alkyl group having 1 to 6 carbon atoms) Or an alkoxy group or a straight or branched chain alkene group having 2 to 6 carbon atoms; n is 0 or 1),
(식 중, R4, R5, R6 및 R7은 각각 수소원자 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기임).(Wherein R 4 , R 5 , R 6 and R 7 each represent a hydrogen atom or a straight or branched chain alkyl group having 1 to 6 carbon atoms or a straight or branched chain alken group having 2 to 6 carbon atoms).
3. 위 2에 있어서, R3는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기인 땜납 플럭스 제거용 세정제 조성물.3. In the above 2, R 3 is a straight-chain or branched chain alkyl group having 1 to 6 carbon atoms, the solder flux removal cleaning composition.
4. 위 3에 있어서, 화학식 1의 화합물은 모노-, 디- 또는 트리-에탄올아민; 모노-, 디- 또는 트리-프로판올아민; 모노-, 디- 또는 트리-이소프로판올아민; 부탄올아민; 부틸모노에탄올아민; 에틸디에탄올아민; N-메틸아미노에탄올; N-아세틸에탄올아민; 하이드록실아민; tert-메틸하이드록실아민 및 tert-부틸하이드록실아민으로 이루어진 군에서 선택된 1종 이상의 것인 땜납 플럭스 제거용 세정제 조성물.4. In the above 3, the compound of Formula 1 is mono-, di- or tri-ethanolamine; Mono-, di- or tri-propanolamine; Mono-, di- or tri-isopropanolamine; Butanolamine; Butyl monoethanolamine; Ethyl diethanolamine; N-methylaminoethanol; N-acetylethanolamine; Hydroxylamine; Cleaner composition for solder flux removal of at least one selected from the group consisting of tert-methylhydroxylamine and tert-butylhydroxylamine.
5. 위 2에 있어서, R4, R5, R6 및 R7은 각각 탄소수가 1 내지 6인 직쇄의 알킬기인 땜납 플럭스 제거용 세정제 조성물.5. In the above 2, R 4 , R 5 , R 6 and R 7 is a solder flux removal cleaning composition, each of which is a linear alkyl group having 1 to 6 carbon atoms.
6. 위 5에 있어서, 화학식 2의 화합물은 테트라메틸암모늄하이드록사이드; 테트라에틸메틸암모늄하이드록사이드; 테트라프로필암모늄하이드록사이드; 및 테트라부틸암모늄하이드록사이드로 이루어진 군에서 선택된 1종 이상의 것인 땜납 플럭스 제거용 세정제 조성물.6. In the above 5, the compound of Formula 2 is tetramethylammonium hydroxide; Tetraethylmethylammonium hydroxide; Tetrapropylammonium hydroxide; And tetrabutylammonium hydroxide. The cleaning composition for solder flux removal of at least one member selected from the group consisting of tetrabutylammonium hydroxide.
7. 위 1에 있어서, 유기아민 화합물 2 내지 10중량%; 자일렌 1 내지 15중량%; 및 글리콜 에테르계 화합물 75 내지 97중량%를 포함하는 땜납 플럭스 제거용 세정제 조성물.7. according to the above 1, 2 to 10% by weight of an organic amine compound; 1 to 15% by weight of xylene; And 75 to 97% by weight of a glycol ether-based compound.
8. 위 1에 있어서, 글리콜 에테르계 화합물은 모노-, 디- 또는 트리-에틸렌글리콜모노메틸에테르; 모노-, 디- 또는 트리-에틸렌글리콜모노에틸에테르; 모노-, 디- 또는 트리- 에틸렌글리콜모노부틸에테르; 및 모노-, 디- 또는 트리-프로필렌글리콜모노메틸에테르로 이루어지는 군에서 선택된 1종 이상의 것인 땜납 플럭스 제거용 세정제 조성물.
8. In the above 1, the glycol ether-based compound is mono-, di- or tri-ethylene glycol monomethyl ether; Mono-, di- or tri-ethylene glycol monoethyl ether; Mono-, di- or tri- ethylene glycol monobutyl ether; And at least one member selected from the group consisting of mono-, di- or tri-propylene glycol monomethyl ether.
본 발명의 세정제 조성물은 각종 유형의 플럭스 잔류물, 예컨대 땜납 범프 표면에 잔사 형태로 존재하는 플럭스, 범프와 회로 기판이 접하는 부분에 존재하는 플럭스, 열 변성된 플럭스, 이온 형태의 플럭스 등을 완벽히 제거할 수 있다.The cleaning composition of the present invention completely removes various types of flux residues, such as those present in the form of residues on the surface of the solder bumps, those in the areas where the bumps are in contact with the circuit board, heat-modified fluxes, and ionic fluxes. can do.
또한, 본 발명의 세정제 조성물은 위와 같이 각종 유형의 플럭스 잔류물을 깨끗이 제거함으로써 회로 기판에 사용되는 주석, 주석 합금, 납, 납 합금, 은 및 은 합금 등 금속의 부식 방지에 유용하다.In addition, the cleaning composition of the present invention is useful for preventing corrosion of metals such as tin, tin alloys, lead, lead alloys, silver and silver alloys used in circuit boards by cleanly removing various types of flux residues as described above.
본 발명의 세정제 조성물은 위와 같이 각종 유형의 플럭스 잔류물을 깨끗이 제거함으로써 땜납이 장기적으로 유지될 수 있도록 한다.The cleaning composition of the present invention allows the solder to be maintained for a long time by cleanly removing various types of flux residues as above.
본 발명의 세정제 조성물은 땜납 범프와 회로 기판 사이의 접착력을 떨어뜨리지 않아 반도체 부품의 내구성 향상에 기여한다.The cleaning composition of the present invention does not degrade the adhesive force between the solder bumps and the circuit board, thereby contributing to the improvement of durability of the semiconductor component.
본 발명의 세정제 조성물은 세계 각국의 환경 규제에 부합할 뿐만 아니라 세정제 조성물의 제조 및 사용시 인체에 크게 유해하지 않은 장점도 있다.
The cleaning composition of the present invention not only conforms to environmental regulations of the world, but also has an advantage of not being significantly harmful to a human body when preparing and using the cleaning composition.
도 1은 본 발명의 일 실시예에 따른 세정제 조성물을 땜납 범프에 처리하기 전(도 1a)과 처리한 후(도 1b)의 땜납 범프 표면 SEM 사진이다.
도 2는 본 발명의 일 비교예에 따른 세정제 조성물을 처리한 후의 땜납 범프 표면 SEM 사진이다.1 is a SEM image of the solder bump surface before and after the cleaning composition (FIG. 1A) and after the treatment (FIG. 1B) of the cleaning composition according to one embodiment of the present invention.
Figure 2 is a SEM image of the solder bump surface after treating the cleaning composition according to a comparative example of the present invention.
본 발명은 유기아민 화합물, 자일렌 및 글리콜 에테르계 화합물을 일정 함량으로 포함함으로써 땜납 범프 표면에 잔사 형태로 존재하는 플럭스, 범프와 회로 기판이 접하는 부분에 존재하는 플럭스, 열 변성된 플럭스, 이온 형태의 플럭스 등의 각종 플럭스 잔류물을 완벽히 제거할 수 있고, 회로 기판에 사용되는 주석, 납, 은 또는 이들의 합금과 같은 금속 부식 방지에 유용한 땜납 플럭스 제거용 세정제 조성물에 관한 것이다.The present invention includes organic amine compounds, xylenes and glycol ether-based compounds in a certain amount, so that the flux present in the form of residues on the surface of the solder bumps, the flux present in the contact portion of the bumps and the circuit board, the heat-modified flux, ionic form The present invention relates to a cleaning flux composition for removing solder flux, which can completely remove various flux residues such as flux, and is useful for preventing metal corrosion such as tin, lead, silver, or alloys thereof used in a circuit board.
이하 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 세정제 조성물은 유기아민 화합물 0.05 내지 10중량%; 자일렌 1 내지 40중량%; 및 글리콜 에테르계 화합물 50 내지 98.95중량%를 포함한다.Detergent composition of the present invention is 0.05 to 10% by weight of the organic amine compound; 1 to 40% by weight of xylene; And 50 to 98.95% by weight of a glycol ether compound.
유기아민 화합물은 플럭스에 포함된 유기물의 탄소 결합을 끊는 역할을 한다. 유기아민 화합물의 염기성을 갖는 부분이 플럭스의 주성분인 산성계 로진과 산-염기 반응을 일으켜 플럭스의 점착력을 약화시킨다.The organic amine compound serves to break the carbon bond of the organic matter contained in the flux. The basic part of the organic amine compound causes an acid-base reaction with the acidic rosin which is the main component of the flux, thereby weakening the adhesive strength of the flux.
본 발명의 유기아민 화합물은 하기 화학식 1의 화합물, 화학식 2의 화합물 또는 이들의 혼합물일 수 있다:The organic amine compound of the present invention may be a compound of formula 1, a compound of formula 2 or a mixture thereof:
[화학식 1][Formula 1]
(식 중, R1 및 R2는 각각 수소 원자, 아세틸기, 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알칸올기이고; R3는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알콕시기이거나, 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기이며; n은 0 또는 1임),(Wherein R 1 and R 2 are each a hydrogen atom, an acetyl group, or a straight or branched chain alkyl or alkanol group having 1 to 6 carbon atoms; R 3 is a straight or branched chain alkyl group having 1 to 6 carbon atoms) Or an alkoxy group or a straight or branched chain alkene group having 2 to 6 carbon atoms; n is 0 or 1),
[화학식 2][Formula 2]
(식 중, R4, R5, R6 및 R7은 각각 수소원자 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기임).(Wherein R 4 , R 5 , R 6 and R 7 each represent a hydrogen atom or a straight or branched chain alkyl group having 1 to 6 carbon atoms or a straight or branched chain alken group having 2 to 6 carbon atoms).
화학식 2의 화합물은 화학식 1의 화합물보다 후술하는 글리콜 에테르계 화합물에 대한 용해도가 우수하다. 따라서 본 발명의 유기아민 화합물로 화학식 2의 화합물을 사용하는 경우(화학식 2의 화합물을 단독으로 사용하는 경우와 화학식 2의 화합물을 화학식 1의 화합물과 혼합 사용하는 경우)에는 본원의 효과 달성에 유리하다. 화학식 2의 화합물은 염 형태이기 때문에 화학식 1의 화합물에 비해 보다 쉽게 용해되고, 보다 다량의 염기 이온(OH-)을 생성시킬 수 있어, 보다 활발한 산-염기 반응을 일으킬 수 있기 때문이다.The compound of formula (2) is superior to the solubility in the glycol ether-based compound described later than the compound of formula (1). Therefore, when the compound of formula 2 is used as the organic amine compound of the present invention (when the compound of formula 2 is used alone and the compound of formula 2 is mixed with the compound of formula 1), it is advantageous to achieve the effects of the present application. Do. This is because the compound of formula (2) is in salt form, so that it is more easily dissolved than the compound of formula (1), and can generate a larger amount of base ions (OH − ), thereby causing a more active acid-base reaction.
화학식 1의 화합물을 사용하는 경우에는 R3가 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기인 화합물이 바람직하다. 이러한 화합물에는 모노-, 디- 또는 트리-에탄올아민; 모노-, 디- 또는 트리-프로판올아민; 모노-, 디- 또는 트리-이소프로판올아민; 부탄올아민; 부틸모노에탄올아민; 에틸디에탄올아민; N-메틸아미노에탄올; N-아세틸에탄올아민; 하이드록실아민 및 tert-메틸하이드록실아민; tert-부틸하이드록실아민으로 이루어진 군에서 선택된 1종 이상의 것이 포함된다.When using the compound of General formula (1), the compound whose R <3> is a C1-C6 linear or branched alkyl group is preferable. Such compounds include mono-, di- or tri-ethanolamine; Mono-, di- or tri-propanolamine; Mono-, di- or tri-isopropanolamine; Butanolamine; Butyl monoethanolamine; Ethyl diethanolamine; N-methylaminoethanol; N-acetylethanolamine; Hydroxylamine and tert-methylhydroxylamine; At least one selected from the group consisting of tert-butylhydroxylamine is included.
또한, 화학식 2의 화합물을 사용하는 경우에는 R4, R5, R6 및 R7이 각각 탄소수가 1 내지 6인 직쇄의 알킬기인 화합물이 바람직하다. 이러한 화합물에는 테트라메틸암모늄하이드록사이드; 테트라에틸메틸암모늄하이드록사이드; 테트라프로필암모늄하이드록사이드; 및 테트라부틸암모늄하이드록사이드로 이루어진 군에서 선택된 1종 이상의 것이 포함되는데, 이 중 테트라메틸암모늄하이드록사이드가 특히 바람직하다.In addition, when using the compound of General formula (2), the compound whose R <4> , R <5> , R <6> and R <7> are C1-C6 linear alkyl groups, respectively is preferable. Such compounds include tetramethylammonium hydroxide; Tetraethylmethylammonium hydroxide; Tetrapropylammonium hydroxide; And at least one selected from the group consisting of tetrabutylammonium hydroxide, of which tetramethylammonium hydroxide is particularly preferred.
유기아민 화합물은 총 조성물 함량에 대하여 0.05 내지 10중량%로 포함될 수 있고, 2 내지 10중량%로 포함되는 것이 바람직하다. 유기아민 화합물의 함량이 0.05중량% 미만이면 플럭스 등에 포함되는 산성 물질과의 반응성이 떨어져 세정 효과가 불충분할 수 있고, 10중량%를 초과하는 경우에는 염기의 활동도가 과다하게 증가되어 주석, 주석 합금, 납, 납 합금, 은 및 은 합금 등의 금속 부식이 발생될 수 있을 뿐만 아니라 제거된 플럭스 성분이 재부착될 수도 있다.The organic amine compound may be included in the amount of 0.05 to 10% by weight based on the total composition content, preferably 2 to 10% by weight. If the content of the organic amine compound is less than 0.05% by weight, the reactivity with the acidic substances contained in the flux, etc. may be insufficient, and the cleaning effect may be insufficient. If the content of the organic amine compound is greater than 10% by weight, the activity of the base is excessively increased, resulting in tin, tin Metal corrosion, such as alloys, lead, lead alloys, silver and silver alloys, may occur as well as the removed flux components may be reattached.
자일렌은 플럭스의 주성분인 로진을 잘 용해시켜 플럭스가 쉽게 제거될 수 있게 하고, 땜납 성분과 플럭스의 계면에 잘 침투되어 플럭스가 쉽게 분리 및 제거될 수 있게 한다.Xylene dissolves the rosin which is the main component of the flux well so that the flux can be easily removed, and the flux penetrates well at the interface between the solder component and the flux so that the flux can be easily separated and removed.
자일렌은 총 조성물 함량에 대하여 1 내지 40중량%가 포함될 수 있다. 다른 필수성분들의 역할에 영향을 주지 않는 범위 내에서 다량 포함될수록 플럭스 제거력은 우수해지나, 환경 규제나 인체에 대한 유해성 및 경제성을 고려하면 1 내지 15중량%가 포함되는 것이 바람직하고, 5 내지 10중량% 포함되는 것이 보다 바람직하다.Xylene may be included 1 to 40% by weight based on the total composition content. Flux removal ability is excellent as it is included in a large amount within the range that does not affect the role of other essential ingredients, but it is preferable to include 1 to 15% by weight in consideration of environmental regulations or human health and economics, 5 to 10 It is more preferably included by weight.
자일렌의 함량이 1중량% 미만이면 플럭스 제거력이 미달될 수 있고 40중량%를 초과하는 경우에는 회로 기판의 제조 과정에서 사용되는 접착제 및 플라스틱 부품을 팽윤 또는 용해시킬 수 있다.If the content of xylene is less than 1% by weight, the flux removal force may be insufficient, and if it is more than 40% by weight, the adhesive and plastic parts used in the manufacturing process of the circuit board may be swelled or dissolved.
본 발명의 글리콜 에테르계 화합물은 플럭스가 잘 용해되도록 하고, 회로 기판을 구성하는 각종 금속이 잘 부식되지 않도록 한다. 또한, 유기아민 화합물에서 유래하는 아민 이온의 활동도를 조절하여 아민에 의한 금속 부식을 막는다. 또한, 물에 대한 플럭스의 용해성을 향상시켜 린스 공정에서 물을 사용하는 경우 세정제 조성물에 의해 제거된 플럭스의 재부착을 방지하는 작용도 한다.The glycol ether-based compound of the present invention allows the flux to dissolve well and prevents the various metals constituting the circuit board from corroding well. In addition, the activity of the amine ions derived from the organic amine compound is controlled to prevent metal corrosion by the amine. It also serves to improve the solubility of the flux in water to prevent reattachment of the flux removed by the detergent composition when water is used in the rinse process.
글리콜 에테르계 화합물로는 본 발명이 속하는 분야에서 통상 사용되는 것들이 제한 없이 사용될 수 있으나, 모노-, 디- 또는 트리-에틸렌글리콜모노메틸에테르; 모노-, 디- 또는 트리-에틸렌글리콜모노에틸에테르; 모노-, 디- 또는 트리-, 에틸렌글리콜모노부틸에테르; 및 모노-, 디- 또는 트리-프로필렌글리콜모노메틸에테르로 이루어지는 군에서 선택된 1종 이상의 것이 바람직하게 사용될 수 있다. 위 화합물들 중 프로필렌글리콜모노메틸에테르가 보다 바람직하다.As the glycol ether-based compound, those conventionally used in the art to which the present invention pertains may be used without limitation, but are mono-, di- or tri-ethylene glycol monomethyl ether; Mono-, di- or tri-ethylene glycol monoethyl ether; Mono-, di- or tri-, ethylene glycol monobutyl ether; And one or more selected from the group consisting of mono-, di- or tri-propylene glycol monomethyl ether can be preferably used. Among the above compounds, propylene glycol monomethyl ether is more preferable.
글리콜 에테르계 화합물은 다른 필수성분들의 함량을 고려하여 총 조성물 함량에 대하여 50 내지 98.95중량%로 포함될 수 있으며, 75 내지 97중량%로 포함되는 것이 바람직하다. 상기 범위를 벗어나는 경우에는 각종 유형의 플럭스 잔류물의 제거력이 저하되거나 회로 기판에 사용되는 각종 금속의 부식이 발생될 수 있다.The glycol ether-based compound may be included in an amount of 50 to 98.95% by weight, and 75 to 97% by weight, based on the total composition content in consideration of the content of other essential ingredients. If it is out of the above range, the removal force of various types of flux residues may be lowered or corrosion of various metals used in the circuit board may occur.
본 발명의 세정제 조성물은 통상의 방법에 따라 제조될 수 있고, 본 발명의 세정제 조성물을 사용하는 방법 또한 특정의 것으로 한정되지 않는다.The detergent composition of the present invention can be prepared according to a conventional method, and the method of using the detergent composition of the present invention is also not limited to the specific one.
본 발명의 세정제 조성물을 사용하여 땜납의 플럭스를 제거하는 방법으로는 예컨대, 플럭스가 포함된 회로기판을 세정제 조성물 또는 그 수용액에 직접 침적시키는 방법, 플럭스가 포함된 회로기판에 세정제 조성물 또는 그 수용액을 스프레이하는 방법, 플럭스가 포함된 회로기판을 세정제 조성물 또는 그 수용액에 접촉시킨 후 브러싱하는 방법 등이 있을 수 있고, 그 외에도 통상적인 샤워법, 패들법, 버블법, 초음파법 등도 생각해 볼 수 있다. 물론, 위 방법들을 복수 개 조합하여 사용할 수도 있다.As a method of removing the flux of the solder using the cleaning composition of the present invention, for example, a method of directly depositing a circuit board containing the flux in the cleaning composition or an aqueous solution thereof, or cleaning the cleaning composition or an aqueous solution thereof in the circuit board containing the flux There may be a method of spraying, a method of brushing the circuit board containing the flux after contacting the cleaning composition or an aqueous solution thereof, and in addition, a conventional shower method, paddle method, bubble method, ultrasonic method and the like can be considered. Of course, a plurality of the above methods may be used in combination.
본 발명의 세정제 조성물의 사용 조건(온도, 시간 등)은 특별히 한정되지 않으며, 각 성분의 함량, 농도 및 제거되어야 하는 플럭스의 종류와 농도 등에 따라 적절히 선택될 수 있다. 예를 들어, 반도체 플립 칩 패키징 공정에서는 20 내지 80℃에서 1 내지 30분간 수행될 수 있다.The conditions for use (temperature, time, etc.) of the cleaning composition of the present invention are not particularly limited, and may be appropriately selected depending on the content, concentration and type of flux to be removed. For example, the semiconductor flip chip packaging process may be performed at 20 to 80 ° C. for 1 to 30 minutes.
본 발명의 세정제 조성물이 사용된 후, 필요에 따라 물 또는 알코올계 용매로 추가 세정하는 린스 공정이 수행될 수 있다.After the cleaning composition of the present invention is used, a rinsing process of further cleaning with water or an alcoholic solvent may be performed as necessary.
본 발명의 조성물로 제거될 수 있는 플럭스는 로진을 주성분으로 하고 이에 활성제, 첨가제 및/또는 용매가 포함된 조성물에 의한 것을 포함하며 특정 성분을 반드시 포함해야 하는 것으로 한정되지 않는다.Fluxes that can be removed with the compositions of the present invention include, but are not limited to, those containing rosin based compositions and which must include certain components.
또한, 플럭스는 프린트 회로판, 세라믹 배선기판, 반도체 소자, 반도체 소자 탑재 기판, 범프 부착 TAB 테이프, 무범프 TAB 테이프, 반도체 소자 탑재 TAB 테이프, 리드프레임, 콘덴서 및 저항 등에 형성된 것을 포함한다.Flux also includes those formed on printed circuit boards, ceramic wiring boards, semiconductor devices, semiconductor device mounting boards, bumped TAB tapes, bumpless TAB tapes, semiconductor device mounted TAB tapes, leadframes, capacitors and resistors.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 이들 실시예는 본 발명을 예시하는 것일 뿐 첨부된 특허청구범위를 제한하는 것이 아니며, 본 발명의 범주 및 기술사상 범위 내에서 실시예에 대한 다양한 변경 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속하는 것도 당연한 것이다.
Hereinafter, preferred examples are provided to aid the understanding of the present invention, but these examples are merely illustrative of the present invention and are not intended to limit the scope of the appended claims. It is apparent to those skilled in the art that various changes and modifications can be made to the present invention, and such modifications and changes belong to the appended claims.
실시예 및 비교예Examples and Comparative Examples
하기 표 1의 성분들을 혼합 및 교반하여 실시예 1-18 및 비교예 1-8의 땜납 플럭스 제거용 세정제 조성물을 각각 제조하였다.The components of Table 1 were mixed and stirred to prepare solder flux removal agents of Example 1-18 and Comparative Example 1-8, respectively.
- 글리콜 에테르계 화합물에서 G1은 디에틸렌글리콜모노메틸에테르, G2는 프로필렌글리콜모노메틸에테르, G3는 트리프로필렌글리콜모노메틸에테르를 각각 나타냄.In organic amine compounds, MEA represents monoethanolamine, MIPA represents monoisopropanolamine, and TMAH represents tetramethylammonium hydroxide, respectively.
In the glycol ether compound, G1 represents diethylene glycol monomethyl ether, G2 represents propylene glycol monomethyl ether, and G3 represents tripropylene glycol monomethyl ether, respectively.
시험예Test Example
땜납 기판 위에 플럭스 조성물(Indium사, SC 5R 제품)을 도포한 후 250℃에서 열처리하여 땜납을 리플로우시켰다. 이 기판에는 땜납 범프가 형성되었고 20배율 현미경을 통하여 확인한 결과 범프 상에 플럭스 잔류물이 존재하였다(도 1의 (a) 참고).The flux composition (Indium, SC 5R) was applied onto the solder substrate and heat treated at 250 ° C. to reflow the solder. Solder bumps were formed on the substrate and flux residues were present on the bumps as determined by a 20-fold microscope (see FIG. 1A).
위 실시예 1-18 및 비교예 1-8의 세정제 조성물로 위 기판을 세정하였다. 세정은 2번씩 수행되었는데, 먼저 위 기판을 위 실시예 및 비교예에 따른 세정제 조성물에 5분간 침적시킨 후, 기판을 꺼내어 스프레이 장비를 이용하여 3분간 세정액을 분무하였다. 분무 세정시 세정액의 온도는 70℃였고, 스프레이의 압력은 0.3PMa이었다.The substrate was cleaned with the cleaning composition of Examples 1-18 and Comparative Examples 1-8. The cleaning was performed twice. First, the substrate was immersed in the cleaning composition according to the above Examples and Comparative Examples for 5 minutes, and then the substrate was taken out and sprayed with the cleaning solution for 3 minutes using a spray equipment. The temperature of the cleaning liquid at the time of spray cleaning was 70 ° C., and the pressure of the spray was 0.3 PMa.
2차례의 세정 공정 후 물을 이용한 린스 공정을 수행하였다.After two washing processes, a rinse process using water was performed.
린스 공정이 끝난 땜납 기판의 SEM 사진을 찍어 그 사진을 바탕으로 (1) 범프 상의 플럭스 제거력, (2) 범프와 회로 기판이 접하는 부분의 플럭스 제거력 및 (3) 땝납의 부식성을 다음의 기준에 따라 평가하였다. 그 결과는 다음 표 2와 같다.
Take a SEM photograph of the solder substrate after the rinsing process and based on the photograph, (1) the flux removal force on the bumps, (2) the flux removal force on the area where the bump and the circuit board contact, and (3) the corrosion resistance of the solder according to the following criteria: Evaluated. The results are shown in Table 2 below.
(1) 범프 상의 플럭스 제거력(1) flux removal on bumps
◎: 플럭스가 완전히 제거됨◎: flux is completely removed
○: 플럭스가 우수하게 제거됨○: excellent flux removed
×: 플럭스가 잔존함
×: flux remains
(2) 범프와 회로 기판이 접하는 부분의 플럭스 제거력(2) Flux removal force at the part where bump and circuit board are in contact
◎: 플럭스가 완전히 제거됨◎: flux is completely removed
○: 플럭스가 우수하게 제거됨○: excellent flux removed
×: 플럭스가 잔존함
×: flux remains
(3) 땜납의 부식성(3) Corrosion of Solder
◎: Pit성 부식이 전혀 발생하지 않음◎: Pit corrosion does not occur at all
○: Pit성 부식이 거의 발생하지 않음○: Pit corrosion hardly occurs
×: Pit성 부식이 발생함
×: Pit corrosion occurs
위 표와 같이, 본 발명에 따라 유기아민 화합물, 자일렌 및 글리콜 에테르계 화합물이 일정한 함량으로 포함된 실시예 1-18은 비교예 1-8에 비해 전반적으로 우수한 플럭스 제거력을 보였으며 땜납의 부식 방지성도 우수하였다. 특히, 범프와 기판이 접하는 부분에서의 플럭스 제거력은 월등하였다.As shown in the above table, Example 1-18 containing a certain amount of organic amine compound, xylene and glycol ether-based compound according to the present invention showed an overall excellent flux removal ability compared to Comparative Example 1-8 and corrosion of solder The prevention was also excellent. In particular, the flux removal force at the part where the bump and the substrate contacted was excellent.
실시예들 중에서는 유기아민 화합물로 화학식 2의 화합물인 TMAH를 사용한 경우가 보다 우수하였다. 예컨대 실시예 8의 세정액으로 세정한 경우는 도 1의 (b)의 SEM 사진에서도 확인되는 바와 같이 플럭스의 제거력(범프의 표면 및 범프와 기판이 접하는 부분에 플럭스가 완전히 제거되었고, 잔사 형태로 존재하는 플럭스, 열 변성된 플럭스 및 이온 형태의 플럭스 등의 플럭스 잔류물이 전혀 존재하지 않음) 및 땜납의 부식 방지력에 있어서 매우 우수하였다.Among the examples, TMAH, a compound of Formula 2, was used as the organic amine compound. For example, in the case of cleaning with the cleaning solution of Example 8, as shown in the SEM photograph of FIG. Flux residues such as flux, heat-modified flux and ionic flux flux) and solder corrosion are very good.
참고로, 비교예 2의 세정액으로 세정한 경우는 도 2와 같이 범프 표면 및 그 주변에 다량의 플럭스 잔류물이 존재하고 있음이 확인된다.For reference, in the case of washing with the cleaning liquid of Comparative Example 2, it is confirmed that a large amount of flux residue is present on the bump surface and its surroundings as shown in FIG.
Claims (8)
0.05 to 10 weight percent organic amine compound; 1 to 40% by weight of xylene; And 50 to 98.95% by weight of a glycol ether-based compound.
[화학식 1]
(식 중, R1 및 R2는 각각 수소 원자, 아세틸기, 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알칸올기이고; R3는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알콕시기이거나, 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기이며; n은 0 또는 1임),
[화학식 2]
(식 중, R4, R5, R6 및 R7은 각각 수소원자 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기임).
The cleaning composition of claim 1, wherein the organic amine compound is a compound of Formula 1, a compound of Formula 2, or a mixture thereof:
[Formula 1]
(Wherein R 1 and R 2 are each a hydrogen atom, an acetyl group, or a straight or branched chain alkyl or alkanol group having 1 to 6 carbon atoms; R 3 is a straight or branched chain alkyl group having 1 to 6 carbon atoms) Or an alkoxy group or a straight or branched chain alkene group having 2 to 6 carbon atoms; n is 0 or 1),
(2)
(Wherein R 4 , R 5 , R 6 and R 7 each represent a hydrogen atom or a straight or branched chain alkyl group having 1 to 6 carbon atoms or a straight or branched chain alken group having 2 to 6 carbon atoms).
The cleaning composition for solder flux removal according to claim 2, wherein R 3 is a linear or branched alkyl group having 1 to 6 carbon atoms.
The compound of claim 3, wherein the compound of formula 1 is mono-, di- or tri-ethanolamine; Mono-, di- or tri-propanolamine; Mono-, di- or tri-isopropanolamine; Butanolamine; Butyl monoethanolamine; Ethyl diethanolamine; N-methylaminoethanol; N-acetylethanolamine; Hydroxylamine; Cleaner composition for solder flux removal of at least one member selected from the group consisting of tert-methylhydroxylamine and tert-butylhydroxylamine.
The cleaning composition for solder flux removal according to claim 2, wherein R 4 , R 5 , R 6 and R 7 are each a linear alkyl group having 1 to 6 carbon atoms.
The compound of claim 5, wherein the compound of formula 2 is selected from the group consisting of tetramethylammonium hydroxide; Tetraethylmethylammonium hydroxide; Tetrapropylammonium hydroxide; And tetrabutylammonium hydroxide. The cleaning composition for solder flux removal of at least one member selected from the group consisting of tetrabutylammonium hydroxide.
The method according to claim 1, 2 to 10% by weight of the organic amine compound; 1 to 15% by weight of xylene; And 75 to 97% by weight of a glycol ether-based compound.
The method of claim 1, wherein the glycol ether compounds are mono-, di- or tri-ethylene glycol monomethyl ether; Mono-, di- or tri-ethylene glycol monoethyl ether; Mono-, di- or tri- ethylene glycol monobutyl ether; And at least one member selected from the group consisting of mono-, di- or tri-propylene glycol monomethyl ether.
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KR1020100044476A KR20110124980A (en) | 2010-05-12 | 2010-05-12 | Cleaning agent composition for removing solder flux |
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KR1020100044476A KR20110124980A (en) | 2010-05-12 | 2010-05-12 | Cleaning agent composition for removing solder flux |
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KR20110124980A true KR20110124980A (en) | 2011-11-18 |
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2010
- 2010-05-12 KR KR1020100044476A patent/KR20110124980A/en not_active Application Discontinuation
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