KR20110015063A - Cleaner composition for removal of lead-free soldering flux - Google Patents
Cleaner composition for removal of lead-free soldering flux Download PDFInfo
- Publication number
- KR20110015063A KR20110015063A KR1020090072578A KR20090072578A KR20110015063A KR 20110015063 A KR20110015063 A KR 20110015063A KR 1020090072578 A KR1020090072578 A KR 1020090072578A KR 20090072578 A KR20090072578 A KR 20090072578A KR 20110015063 A KR20110015063 A KR 20110015063A
- Authority
- KR
- South Korea
- Prior art keywords
- lead
- solvent
- free solder
- composition
- solder flux
- Prior art date
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- 230000004907 flux Effects 0.000 title claims abstract description 62
- 239000000203 mixture Substances 0.000 title claims abstract description 56
- 238000005476 soldering Methods 0.000 title abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 48
- -1 nitrogen-containing compound Chemical class 0.000 claims abstract description 31
- 239000002904 solvent Substances 0.000 claims abstract description 25
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims abstract description 22
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims abstract description 22
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 17
- 150000002367 halogens Chemical class 0.000 claims abstract description 16
- 239000003960 organic solvent Substances 0.000 claims abstract description 14
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 3
- 229910000679 solder Inorganic materials 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 24
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical group CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 16
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 11
- 239000003599 detergent Substances 0.000 claims description 11
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 5
- 239000012964 benzotriazole Substances 0.000 claims description 5
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 4
- 239000012459 cleaning agent Substances 0.000 claims description 4
- HXQHRUJXQJEGER-UHFFFAOYSA-N 1-methylbenzotriazole Chemical compound C1=CC=C2N(C)N=NC2=C1 HXQHRUJXQJEGER-UHFFFAOYSA-N 0.000 claims description 3
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 claims description 3
- PWORFEDVDWBHSJ-UHFFFAOYSA-N 2-methylbenzotriazole Chemical compound C1=CC=CC2=NN(C)N=C21 PWORFEDVDWBHSJ-UHFFFAOYSA-N 0.000 claims description 3
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 claims description 2
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims description 2
- PJEXUIKBGBSHBS-UHFFFAOYSA-N 1-(hydroxymethyl)pyrrolidin-2-one Chemical compound OCN1CCCC1=O PJEXUIKBGBSHBS-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 claims description 2
- DCALJVULAGICIX-UHFFFAOYSA-N 1-propylpyrrolidin-2-one Chemical compound CCCN1CCCC1=O DCALJVULAGICIX-UHFFFAOYSA-N 0.000 claims description 2
- GUOVBFFLXKJFEE-UHFFFAOYSA-N 2h-benzotriazole-5-carboxylic acid Chemical compound C1=C(C(=O)O)C=CC2=NNN=C21 GUOVBFFLXKJFEE-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims description 2
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 claims 1
- 150000002576 ketones Chemical class 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052802 copper Inorganic materials 0.000 abstract description 9
- 239000010949 copper Substances 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 3
- 239000003759 ester based solvent Substances 0.000 abstract description 2
- 239000004210 ether based solvent Substances 0.000 abstract description 2
- 239000005453 ketone based solvent Substances 0.000 abstract description 2
- 230000001476 alcoholic effect Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 15
- 239000000758 substrate Substances 0.000 description 11
- 238000005406 washing Methods 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- NZEVKZAEMSMLMC-UHFFFAOYSA-N nmp-7 Chemical compound C=1C=C2N(CCCCC)C3=CC=CC=C3C2=CC=1C(=O)N1CCCCC1 NZEVKZAEMSMLMC-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000013543 active substance Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 235000019645 odor Nutrition 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 229940031098 ethanolamine Drugs 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical class OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003900 soil pollution Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- C11D2111/22—
Abstract
Description
본 발명은 무연땜납 플럭스 세정제 조성물에 관한 것이다. The present invention relates to a lead-free solder flux detergent composition.
전자부품, 반도체부품 등의 정밀부품을 제조할 때, 납땜이 통상 행해진다. 납땜에는 종래부터 납을 포함하는 공정 땜납이 이용되고 있다. 통상, 땜납에는 플럭스(flux)를 이용한다. 상기 플럭스는 납땜이 수행되는 대상물 및 땜납 표면을 청정화하고 땜납의 상기 대상물에 대한 젖음성을 향상시킨다. 이 때문에 상기 플럭스를 이용하는 땜납은, 땜납과 납땜 대상물의 접합강도를 향상시킨다. 상기 플럭스는, 통상 로진(rosin), 로진 유도체 등의 베이스 수지, 유기산, 할로겐화물 등의 활성제 및 알코올 등의 용매를 구성성분으로 한다.When manufacturing precision parts, such as an electronic component and a semiconductor component, soldering is normally performed. Conventionally, the process solder containing lead is used for soldering. Usually, flux is used for soldering. The flux cleans the solder surface and the object on which the solder is performed and improves the wettability of the solder to the object. For this reason, the solder using the flux improves the bonding strength of the solder and the soldering object. The flux is usually composed of base resins such as rosin and rosin derivatives, activators such as organic acids and halides, and solvents such as alcohols.
납땜을 수행한 후, 상기 부품 표면에 잔존하는 여분의 땜납 플럭스를 제거하기 위해 세정공정을 수행한다. 이러한 세정공정에는 트리클로로에틸렌, 퍼클로로에틸렌, 염화메틸렌 등의 염소계 용재를 주성분으로 하는 염소계 세정제가 이용되었다. 상기 염소계 세정제는 불연성이고 건조성도 우수하다는 이점이 있으나, 오존층 파괴나 토양오염 등의 환경문제, 인체에 대한 독성 등의 이유로 현재는 그 사용 이 제한되고 있다. 또한 전자부품 등의 세정에 있어서 염소 이온, 황산 이온 등의 이온성 잔존물에 대한 세정효과가 거의 없다는 단점이 있다.After soldering, a cleaning process is performed to remove excess solder flux remaining on the surface of the part. In this washing step, a chlorine-based cleaner mainly composed of chlorine-based solvents such as trichloroethylene, perchloroethylene, and methylene chloride was used. The chlorine-based cleaner has the advantage of being nonflammable and excellent in dryness, but its use is currently limited due to environmental problems such as ozone layer destruction or soil pollution, toxicity to the human body, and the like. In addition, there is a disadvantage that the cleaning effect on ionic residues such as chlorine ions, sulfate ions, etc. in the cleaning of electronic parts and the like is almost absent.
일본 특허공보 제10-2008-0114718호에는, 특정의 글리콜에테르류, 비이온성 계면활성제 및 폴리옥시 알킬렌인산에스테르계 계면활성제를 필수성분으로 함유하는 비할로겐계의 세정제 조성물이 개시되어 있다. 또한, 일본 특허등록 제2813862호에는 상기 세정제 조성물에 폴리옥시알킬렌아민계 계면활성제를 더 첨가한 비할로겐계의 세정제 조성물이 개시되어 있다. 이들의 세정제 조성물은, 세정력(특히, 이온성 잔존물에 대한 세정력)이 우수하고, 독성, 악취, 인화성 및 피세정물에 대한 영향(예를 들면, 피세정물의 부식 등)이 적기 때문에, 광학부품, 전자부품, 세라믹부품 등의 정밀부품에 부착되는 땜납 플럭스를 제거하기 위한 조성물로 적합한 것으로 알려져 있다.Japanese Patent Publication No. 10-2008-0114718 discloses a non-halogen-based detergent composition containing specific glycol ethers, nonionic surfactants, and polyoxyalkylene phosphate ester surfactants as essential components. In addition, Japanese Patent No. 2813862 discloses a non-halogen-based detergent composition in which a polyoxyalkylene amine-based surfactant is further added to the detergent composition. These detergent compositions have excellent cleaning power (particularly, cleaning power against ionic residues), and have low toxicity, odor, flammability, and effects on the object to be cleaned (for example, corrosion of the object being cleaned). It is known to be suitable as a composition for removing solder flux adhering to precision parts such as electronic parts and ceramic parts.
그런데 최근에 납의 유해성이 인식되면서 세계 각국에서 납을 포함한 땜납의 사용이 제한되어, 납을 대신해 구리, 은 등을 이용한 무연땜납이 적극적으로 사용되고 있다. 무연땜납으로는, 주석―은, 주석―구리, 주석―은―구리 등의 합금을 사용하는 것을 들 수 있다.However, in recent years, due to the recognition of the harmfulness of lead, the use of solder, including lead is limited in countries around the world, lead-free solder using copper, silver, etc. in place of the lead has been actively used. Examples of lead-free solders include alloys such as tin-silver, tin-copper, and tin-silver-copper.
무연땜납을 사용하는 경우, 종래의 주석―납 공정 땜납을 이용하는 경우에 비하여, 용접 온도를 30℃이상 높게 해야 하며(일부 합금계의 무연땜납 제외), 종래의 주석―납 공정 땜납에 비하여 땜납 젖음성이 떨어진다는 문제가 있다. 이러한 문제를 해결하기 위하여, 무연땜납 중의 활성제의 함유량을 증가시키거나 종래의 무연땜납에 이용되던 활성제보다 더 강력한 활성제를 이용하고 있다.When lead-free solder is used, the welding temperature should be 30 ° C or higher (except for some alloy-based lead-free solder), compared to the case of using conventional tin-lead solder, and the solder wettability is higher than that of the conventional tin-lead solder. There is a problem that falls. In order to solve this problem, an active agent is used which increases the content of the active agent in the lead-free solder or is stronger than the active agent used in the conventional lead-free solder.
그러나, 이러한 무연땜납을 사용하는 경우, 용접 공정 시 많은 반응생성물이 발생하는 경향이 있다. 상기 반응생성물로는 활성제와 주석의 염, 로진계 플럭스를 이용하는 경우에는 로진과 주석의 염 등을 들 수 있다. 이러한 반응생성물은, 주석 2가 또는 4가의 금속염으로서 각종 용매, 세정제 조성물, 물 등에 용해되기 어렵기 때문에 피세정물로부터 제거하는 것이 상당히 어렵다. 구체적으로, 종래의 비할로겐계 세정제 조성물이나 극성 또는 비극성의 유기용매를 이용하여 세정을 행하는 경우, 해당 주석염에 대한 세정력 부족으로 인해 피세정물 표면에 해당 주석염으로부터 유래하는 플럭스 잔사가 남거나, 오염물질이 재 부착하는 문제가 발생한다. 따라서 이러한 문제를 해결하기 위한 무연땜납 프럭스 제거용 세정제 조성물의 개발이 요구되고 있다.However, when such lead-free solders are used, many reaction products tend to occur during the welding process. Examples of the reaction product include salts of the activator and tin, and salts of rosin and tin when rosin-based flux is used. These reaction products are difficult to remove from the object to be cleaned because they are difficult to dissolve in various solvents, detergent compositions, water, etc. as tin divalent or tetravalent metal salts. Specifically, when the cleaning is performed using a conventional non-halogen detergent composition or a polar or non-polar organic solvent, the flux residue derived from the tin salt may remain on the surface of the object to be cleaned due to the lack of cleaning power for the tin salt. The problem is that contaminants reattach. Accordingly, there is a demand for developing a lead-free solder flux cleaning composition for solving such problems.
본 발명의 목적은 피세정물에 부착되는 무연땜납 플럭스에 대한 충분한 세정력을 가질 뿐만 아니라, 알루미늄을 포함하는 배선과 구리를 포함하는 배선을 부식시키지 않고, 환경부하가 낮으며, 인체에 무해하고 악취발생이 적으며 인화성이 낮아서 작업안전성도 우수한 세정제 조성물을 제공하는 것이다.The object of the present invention is not only to have sufficient cleaning power against the lead-free solder flux adhering to the object to be cleaned, but also to corrode the wiring including aluminum and the wiring including copper, and the environmental load is low, harmless to the human body and odor. It is a low occurrence and low flammability to provide a cleaning composition excellent in work safety.
본 발명은 (a)아졸계 화합물; (b)하기 화학식 1로 표시되는 테트라히드로 푸르푸릴알코올; 및 (c)비할로겐 유기용매를 포함하는 것을 특징으로 하는 무연땜납 플럭스 제거용 세정제 조성물을 제공한다:The present invention (a) azole compound; (b) tetrahydrofurfuryl alcohol represented by the following formula (1); And (c) a non-halogen organic solvent.
<화학식 1><Formula 1>
본 발명의 무연땜납 플럭스 제거용 세정제 조성물은 피세정물에 부착되는 무연땜납 플럭스에 대한 우수한 세정력을 가질 뿐만 아니라, 알루미늄을 포함하는 배선과 구리를 포함하는 배선을 부식시키지 않고, 환경부하가 낮아서 무연땜납 프럭스 제거에 매우 효과적이다. 또한, 인체에 무해하고 악취발생이 적으며 인화성이 낮아서 작업안전성도 우수하다.The lead-free solder flux removal cleaning composition of the present invention not only has excellent cleaning power against the lead-free solder flux adhered to the object to be cleaned, but also does not corrode the wiring including aluminum and the wiring including copper, and has no environmental load. It is very effective for removing solder flux. In addition, it is harmless to the human body, generates less odors, and has low flammability, so it is excellent in work safety.
이하 본 발명을 상세하게 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 무연땜납 플럭스 세정제 조성물은 (a)아졸계 화합물; (b)테트라히드로 푸르푸릴알코올; 및 (c)비할로겐 유기용매를 포함한다.The lead-free solder flux cleaning composition of the present invention comprises (a) an azole compound; (b) tetrahydrofurfuryl alcohol; And (c) a non-halogen organic solvent.
본 발명의 무연땜납 플럭스 세정제 조성물에 포함되는 (a)아졸계 화합물은 트리아졸 화합물인 것이 바람직하다. 상기 트리아졸 화합물은 트리아졸 분자와 금속표면 사이에 강한 결합이 형성되어 화학흡착(chemisorption)을 이루고, 이로 인해 금속부식의 원인인 상기 염기성 화합물의 침투를 막아, 금속 특히, 구리 및 구리합금에 대한 부식을 방지하는 역할을 한다. It is preferable that the (a) azole type compound contained in the lead-free solder flux cleaning composition of this invention is a triazole compound. The triazole compound forms a strong bond between the triazole molecule and the metal surface, resulting in chemisorption, thereby preventing penetration of the basic compound, which causes metal corrosion, to metals, particularly copper and copper alloys. It serves to prevent corrosion.
상기 트리아졸 화합물은 1,2,3-트리아졸, 1,2,4-트리아졸, 3-아미노-1,2,4-트리아졸, 4-아미노-4H-1,2,4-트리아졸, 벤조트리아졸, 1-히드록시벤조트리아졸, 1-메틸벤조트리아졸, 2-메틸벤조트리아졸, 5-메틸벤조트리아졸, 톨릴트리아졸, 벤조트리아졸-5-카르본산, 니트로벤조트리아졸 및 2- (2H-벤조트리아졸-2-일)-4,6-디-ｔ-부틸페놀로 이루어진 군에서 선택되는 1종 또는 2종 이상이 바람직하며, 벤조트리아졸, 1-히드록시벤조트리아졸, 1-메틸벤조트리아졸, 2-메틸벤조트리아졸, 5-메틸벤조트리아졸, 톨릴트리아졸 및 1,2,3-트리아졸로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 보다 바람직하다. The triazole compound is 1,2,3-triazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, 4-amino-4H-1,2,4-triazole , Benzotriazole, 1-hydroxybenzotriazole, 1-methylbenzotriazole, 2-methylbenzotriazole, 5-methylbenzotriazole, tolyltriazole, benzotriazole-5-carboxylic acid, nitrobenzotria One or two or more selected from the group consisting of sol and 2- (2H-benzotriazol-2-yl) -4,6-di-tet-butylphenol are preferable, and benzotriazole, 1-hydroxy It is one kind or two or more kinds selected from the group consisting of benzotriazole, 1-methylbenzotriazole, 2-methylbenzotriazole, 5-methylbenzotriazole, tolyltriazole and 1,2,3-triazole. desirable.
상기 아졸계 화합물은 조성물 총 중량에 대하여, 0.1 내지 10중량%로 포함되는 것이 바람직하고, 0.5 내지 5 중량%로 포함되는 것이 보다 바람직하다. 상술한 범위 미만으로 포함되는 경우, 레지스트 및 식각 잔사 제거용 조성물의 금속에 대한 부식방지효과가 저하된다. 또한, 상술한 범위를 초과하여 포함되는 경우, 박 리 공정 시 거품이 형성되어 공정 진행이 어려워지며, 레지스트의 제거력이 저하되는 문제점이 나타나게 된다. 상술한 아졸계 화합물의 함량은, 아졸계 화합물이 단독으로 사용될 경우는 그 하나의 화합물의 함량이고, 2종 이상 혼합하여 사용했을 경우는 그 합계의 함량이다.The azole compound is preferably contained in 0.1 to 10% by weight, more preferably 0.5 to 5% by weight relative to the total weight of the composition. When included in less than the above-described range, the anti-corrosion effect on the metal of the resist and the etching residue removal composition is reduced. In addition, when included in more than the above-described range, bubbles are formed during the peeling process, making it difficult to proceed the process, the problem that the removal force of the resist is lowered. The content of the azole compound described above is the content of one compound when the azole compound is used alone, and the total content of two or more kinds of the azole compound.
본 발명의 무연땜납 플럭스 세정제 조성물에 포함되는 (b)테트라히드로 푸르푸릴알코올은 하기 화학식 1로 표시된다. (B) Tetrahydrofurfuryl alcohol contained in the lead-free solder flux cleaning composition of the present invention is represented by the following formula (1).
<화학식 1><Formula 1>
상기 (b)테트라히드로 푸르푸릴알코올은 무연땜납 플럭스 세정제 조성물 내에서 용매로 사용되며, 무연땜납 플럭스의 용해속도를 증가시키는 역할을 한다. Tetrahydrofurfuryl alcohol (b) is used as a solvent in the lead-free solder flux cleaning composition, and serves to increase the dissolution rate of the lead-free solder flux.
상기 (b)테트라히드로 푸르푸릴알코올은 조성물 총중량에 대하여, 1 내지 90중량%로 포함되는 것이 바람직하며, 더욱 바람직하게는 50 내지 90중량%이다. 상술한 범위를 만족하면, 용해력이 일정하게 유지되는 이점이 있다. 또한, 상기 (b) 테트라히드로 푸르푸릴알코올(THFA)이 50중량% 내지 90중량%로 포함되면, 용해속도가 일정하게 유지되므로 기판에 도포된 플럭스 잔사가 거의 남지 않는 이점이 있다. 또한, 상기 (b)테트라히드로 푸르푸릴알코올은 하부 재질에 어택을 줄 수 있는 아민기를 포함하지 않아서 하부 재질에 대한 어택(attack)을 발생시키지 않는 이점이 있다.Tetrahydrofurfuryl alcohol (b) is preferably included in 1 to 90% by weight, more preferably 50 to 90% by weight based on the total weight of the composition. If the above range is satisfied, there is an advantage that the dissolving power is kept constant. In addition, when the (b) tetrahydrofurfuryl alcohol (THFA) is included in 50% by weight to 90% by weight, since the dissolution rate is kept constant, there is an advantage that little flux residue applied to the substrate remains. In addition, the (b) tetrahydrofurfuryl alcohol does not include an amine group that can attack the lower material, there is an advantage that does not generate an attack (attach) to the lower material.
본 발명의 무연땜납 플럭스 제거용 세정제 조성물은 (a)아졸계 화합물과 (b)테트라히드로 푸르푸릴알코올(THFA)을 포함하므로 테트라히드로 푸르푸릴알코올(THFA)이 단독으로 포함됐을 때와 비교하여 매우 개선된 세정력을 갖는다. The lead-free solder flux removal cleaning composition of the present invention includes (a) an azole compound and (b) tetrahydrofurfuryl alcohol (THFA), and thus compared with tetrahydrofurfuryl alcohol (THFA) alone. Has improved cleaning power.
본 발명의 무연땜납 플럭스 제거용 조성물에 포함되는 (c)비할로겐계 유기용매는 (a)아졸계 화합물과 (b)테트라히드로 푸르푸릴알코올(THFA)에 대하여 우수한 용해성을 나타낸다. 상기 (c)비할로겐계 유기용매는 상기 (a)아졸계 화합물과 (b)테트라히드로 푸르푸릴 알코올을 제외한 비할로겐계 유기용매라면 특별히 한정하지 않고 공지의 것을 사용할 수 있다. 상기 (c)비할로겐계 유기용매는 헥산, 헵탄, 옥탄 등의 탄화수소계 용매; 메탄올, 에탄올, 프로판올 등의 알코올계 용매; 아세톤, 메틸에틸케톤 등의 케톤계 용매; 디에틸에테르, 테트라히드로푸란, 글리콜에테르 화합물 등의 에테르계 용매; 초산에틸, 초산메틸 등의 에스테르계 용매; 질소 함유 화합물계 용매; 에탄올 아민, 모노에탄올 아민, 디에탄올아민 등의 알칸올아민 용매로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다. 이 중에서 세정성 향상을 위해서는 알칸올아민계 용매 또는 질소 함유 화합물계 용매를 이용하는 것이 보다 바람직하다. 상기 질소 함유 화합물계 용매는 1-메틸-2-피롤리돈, 1-에틸-2-피롤리돈, N-프로필 피롤리돈, N-히드록시메틸 피롤리돈 및 N-히드록시에틸 피롤리돈으로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다. 이 중에서 1-메틸-2-피롤리돈을 사용하는 것이 보다 바람직하다. 상기 알칸올아민계 용매는 에탄올아민, 디에탄올아민, 트리에탄올아민, 모노에탄올아민, 이소부탄올아민 및 에틸프로판디올아민으로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다. 이 중에서 모노에탄올아민을 사용하는 것이 보다 바람직하다.The (c) non-halogen organic solvent included in the lead-free solder flux removal composition of the present invention exhibits excellent solubility in (a) azole compound and (b) tetrahydrofurfuryl alcohol (THFA). The (c) non-halogen-based organic solvent is not particularly limited as long as it is a non-halogen-based organic solvent except for the (a) azole compound and (b) tetrahydrofurfuryl alcohol, and a known one can be used. The non-halogen organic solvent (c) may be a hydrocarbon solvent such as hexane, heptane, or octane; Alcohol solvents such as methanol, ethanol and propanol; Ketone solvents such as acetone and methyl ethyl ketone; Ether solvents such as diethyl ether, tetrahydrofuran, and glycol ether compounds; Ester solvents such as ethyl acetate and methyl acetate; Nitrogen-containing compound solvents; It is preferable that it is 1 type, or 2 or more types chosen from the group which consists of alkanolamine solvents, such as ethanol amine, a monoethanol amine, and diethanolamine. It is more preferable to use an alkanolamine solvent or a nitrogen-containing compound solvent in order to improve washability. The nitrogen-containing compound solvent is 1-methyl-2-pyrrolidone, 1-ethyl-2-pyrrolidone, N-propyl pyrrolidone, N-hydroxymethyl pyrrolidone and N-hydroxyethyl pyrrolidone It is preferable that it is 1 type, or 2 or more types chosen from the group which consists of money. It is more preferable to use 1-methyl-2-pyrrolidone among these. The alkanolamine solvent is preferably one or two or more selected from the group consisting of ethanolamine, diethanolamine, triethanolamine, monoethanolamine, isobutanolamine, and ethylpropanediolamine. Among these, it is more preferable to use monoethanolamine.
상기 (C)비할로겐계 유기용매는 조성물 총 중량에 대하여 1 내지 20중량%로 포함되는 것이 바람직하며, 더욱 바람직하게는 5 내지 15중량%를 포함한다. 상술한 범위를 만족하면 무연땜납 플럭스에 대하여 더 우수한 제거성능이 발휘된다. The (C) non-halogen organic solvent is preferably included in 1 to 20% by weight, more preferably 5 to 15% by weight based on the total weight of the composition. If the above range is satisfied, better removal performance is achieved with respect to the lead-free solder flux.
또한, 본 발명은 상기 무연땜납 플럭스 제거용 세정용 조성물을 이용한 무연땜납 플럭스의 제거방법을 제공한다. 무연땜납 플럭스를 제거할 때의 세정방법은 특별히 한정되지 않으며, 본 발명의 세정제 조성물을 사용하여 공지의 방법으로 수행할 수 있다. The present invention also provides a method of removing lead-free solder flux using the cleaning composition for removing the lead-free solder flux. The cleaning method for removing the lead-free solder flux is not particularly limited and can be carried out by a known method using the cleaning composition of the present invention.
이하, 일반적인 세정 방법으로서 본 발명의 무염땜납 플럭스 제거용 세정제 조성물을 전자부품 상의 무연 크림 땜납 플럭스에 접촉시키는 경우에 대해 설명한다. Hereinafter, as a general cleaning method, the case where the cleaning composition for removing the solderless flux of the present invention is brought into contact with the lead-free cream solder flux on the electronic component will be described.
구체적인 세정방법으로는, 본 발명의 무연땜납 플러스 제거용 세정제 조성물에 전자부품을 직접 침지해서 세정하는 방법, 전자부품에 대하여 스프레이 장치를 이용하여 본 발명의 무연땜납 플럭스 제거용 세정제 조성물의 수용액을 스프레이 하여 씻어내는 방법, 또는 본 발명의 무연땜납 플럭스 제거용 세정제 조성물을 전자부품에 접촉시켜 기계적 수단에 의해 브러싱하는 방법 등을 들 수 있다.As a specific washing | cleaning method, the method of directly immersing and cleaning an electronic component in the lead-free solder plus removal detergent composition of this invention, sprays the aqueous solution of the lead-free solder flux removal detergent composition of this invention using a spray apparatus with respect to an electronic component. And a method of washing by washing or a method of brushing the lead-free solder flux removal composition of the present invention by contacting an electronic component with mechanical means.
하지만 플립칩 실장기판을 세정하는 경우, 기판의 50 ㎛이하의 간극에 세정제를 통액시키지 않으면 안되므로 상기 방법으로 세정할 수 없다. 따라서 직통식 세정장치를 이용한 직통식 세정방법을 수행할 수 있다. 상기 직통식 세정장치란, 세정제의 순환 라인 중에 편입되어 있는 세정탑 내의 몸통부에, 느슨하게 끼운 상태에서 수용설치되는 통액공(通液孔)이 없고, 바닥부에만 통액공을 가지는 피세정물 수납용의 세로형 통을 갖는 세정장치를 말한다. 상기 직통식 세정방법이란, 세정장치의 세로형 통에 피세정물(플립칩 실장기판)을 수납한 후, 상기 통 내에 세정제를 강제 유통시켜 피세정물을 세정하는 방법을 말한다. However, in the case of cleaning the flip chip mounting substrate, the cleaning agent must be passed through a gap of 50 µm or less of the substrate, and thus the cleaning method cannot be performed by the above method. Therefore, the direct cleaning method using the direct cleaning device can be performed. The direct-flow type washing device is a body part in a washing tower incorporated in a circulation line of a cleaning agent, and there is no fluid hole accommodated in a loosely fitted state, and the object to be cleaned has a liquid hole only at the bottom. The washing | cleaning apparatus which has a vertical cylinder for dragons. The direct cleaning method refers to a method of cleaning a to-be-cleaned object by forcibly distributing a cleaning agent in the tub after storing the object to be cleaned (flip chip mounting substrate) in a vertical tub of the washing apparatus.
본 발명의 세정제 조성물의 사용조건(세정온도, 세정시간 등)은 특별히 한정되지 않으며, 조성물 중의 (A)∼(C) 각 성분의 농도·사용 비율, 제거해야 할 플럭스의 종류 등에 따라 적절히 선택할 수 있다. 예를 들면, 피세정물을 세정할 때의 상기 조성물의 온도는, 제거해야 할 플럭스를 적합하게 세정 및 제거할 수 있도록 적절히 설정하면 좋다. 상기 조성물의 온도는 통상 20∼80℃ 정도인 것이 바람직하다. 상기 조성물의 온도를 20℃ 이상으로 함으로써 상기 조성물에 대한 플럭스의 용해성을 향상시킬 수 있으며, 상기 조성물의 온도를 80℃ 이하로 함으로써 조성물의 과열이나 폭발의 위험을 방지할 수 있다The conditions for use (cleaning temperature, cleaning time, etc.) of the cleaning composition of the present invention are not particularly limited, and may be appropriately selected depending on the concentration and use ratio of each component (A) to (C) in the composition, the type of flux to be removed, and the like. have. For example, what is necessary is just to set the temperature of the said composition at the time of washing a to-be-cleaned object suitably so that the flux to be removed may be wash | cleaned and removed suitably. It is preferable that the temperature of the said composition is about 20-80 degreeC normally. The solubility of the flux with respect to the said composition can be improved by setting the temperature of the said composition to 20 degreeC or more, and the risk of overheating or explosion of a composition can be prevented by setting the temperature of the said composition to 80 degrees C or less.
이하에서, 실시예를 통하여 본 발명을 보다 상세히 설명한다. 그러나, 하기의 실시예는 본 발명을 더욱 구체적으로 설명하기 위한 것으로서, 본 발명의 범위가 하기의 실시예에 의하여 한정되는 것은 아니다. 하기의 실시예는 본 발명의 범위 내에서 당업자에 의해 적절히 수정, 변경될 수 있다. Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following examples are intended to illustrate the present invention more specifically, but the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.
실시예1 내지 7 및 비교예 1 내지 3: 무연땜납 플럭스 제거용 조성물의 제조Examples 1 to 7 and Comparative Examples 1 to 3: Preparation of a composition for removing lead-free solder flux
교반기가 설치되어 있는 혼합조에 표 1의 조성비에 따라, 해당 성분들을 첨가한 후, 상온에서 1시간 동안 500rpm의 속도로 교반하여 무연땜납 플럭스 제거용 세정제 조성물을 제조하였다.According to the composition ratio of Table 1 to the mixing tank equipped with a stirrer, after the addition of the components, and stirred at a speed of 500rpm for 1 hour at room temperature to prepare a lead-free solder flux cleaning composition.
BTA: 벤조트리아졸 (benzotriazole)BTA: benzotriazole
TTA: 톨릴트리아졸 (tolyltriazole)TTA: tolyltriazole
THFA: 테트라히드로 푸르푸릴알코올(tetrahydro furfuryl alcohol)THFA: tetrahydro furfuryl alcohol
NMP: 1-메틸-2-피롤리돈(1-methyl-2-pyrrolidone)NMP: 1-methyl-2-pyrrolidone
MEA: 모노에탄올아민(monoethanolamine)MEA: monoethanolamine
MIPA: 모노이소프로필아민(monoisopropylamine) MIPA: monoisopropylamine
시험예: 무연땜납 플럭스 제거용 조성물의 특성평가Test Example: Characterization of Composition for Pb-Free Solder Flux Removal
<플럭스 잔사 제거 시험>Flux residue removal test
4 인치(inch) 산화 실리콘 기판에 플럭스 도포한 후 230℃에서 60초 간 가열 한 후에 기판을 꺼낸다. 상기 기판은 2㎝×7㎝로 절단하여 시험기판을 만든다.After flux coating on a 4 inch silicon oxide substrate, the substrate is removed after heating at 230 ° C. for 60 seconds. The substrate is cut into 2 cm x 7 cm to make a test substrate.
상기 시험기판을 하기 1)~3)순서로 처리한다.The test substrate is treated in the following steps 1) to 3).
1) 60℃에서 3분간, 각종 세정제 조성물(실시예1 내지 7, 비교예1 내지 3)에 침지시킨다.1) It is immersed in various cleaning composition (Examples 1-7, Comparative Examples 1-3) at 60 degreeC for 3 minutes.
2) 23℃에서 1분간, 디이온화수(DI water)에 침지 시킨다.2) Dip in DI water for 1 minute at 23 ° C.
3) 질소(N2) 가스로 건조 시킨다. 3) Dry with nitrogen (N 2 ) gas.
상기와 같이 처리한 후, 실시예1 내지 7 및 비교예1 내지 3의 세정제 조성물의 플럭스 제거성을 평가하여, 그 결과를 하기의 표 2에 나타내었다.After the treatment as described above, the flux removal properties of the cleaning compositions of Examples 1 to 7 and Comparative Examples 1 to 3 were evaluated, and the results are shown in Table 2 below.
[주] ◎: 플럭스의 양호한 제거: 잔사(플럭스)의 표면적 0 %Note: Good removal of flux: Surface area of residue (flux) 0%
○: 플럭스 약간 잔존: 잔사(플럭스)의 표면적 0% 초과 10% 이하○: slightly remaining flux: more than 0% and less than 10% of the surface area of the residue (flux)
△: 상당량의 플럭스 잔존: 잔사(플럭스)의 표면적 10% 초과Δ: substantial amount of flux remaining: more than 10% of surface area of residue (flux)
표 2를 참조하면, 본 발명에 따른 실시예1 내지 7의 무연땜납 플럭스 제거용 세정제 조성물은 플럭스 제거에 있어서 우수한 성능을 나타낸 반면, 비교예1 내지 4의 세정제 조성물은 플럭스의 세정력이 현저히 떨어짐을 확인할 수 있었다. Referring to Table 2, the lead-free solder flux removal cleaning compositions of Examples 1 to 7 according to the present invention showed excellent performance in flux removal, whereas the cleaning compositions of Comparative Examples 1 to 4 were inferior in the cleaning power of the flux. I could confirm it.
<부식 방지제의 종류 및 함량에 따른 부식 방지 성능 평가><Evaluation of Corrosion Protection Performance by Kinds and Contents of Corrosion Inhibitors>
실시예1 내지 7 과 비교예1 내지 3의 부식 방지 성능을 평가하기 위하여, 구리 배선과 Mo/Al/Mo 배선이 노출된 기판을 사용하여 부식 방지 성능을 평가하였다. 알루미늄에 대한 방식 평가는 60℃에서 무연땜납 플럭스 제거용 세정제 조성물 원액에 30분간 침적, 구리에 대한 방식 평가는 60℃에서 무연땜납 플럭스 제거용 세정제 조성물 원액에 10분간 침적시킨 후 세정건조를 거쳐 주사 전자현미경(SEM, Hitach S-4700)을 이용하여 평가하였으며, 그 결과를 하기의 표 3에 나타내었다.In order to evaluate the corrosion protection performance of Examples 1-7 and Comparative Examples 1-3, the corrosion prevention performance was evaluated using the board | substrate which exposed the copper wiring and Mo / Al / Mo wiring. Anticorrosive evaluation on aluminum was immersed in the stock solution for lead-free solder flux removal at 60 ° C. for 30 minutes, and anticorrosive evaluation for copper was immersed in the stock solution for lead-free solder flux removal at 60 ° C. for 10 minutes and then washed and dried. It was evaluated using an electron microscope (SEM, Hitach S-4700), the results are shown in Table 3 below.
[부식성 평가 기준] Corrosion Evaluation Criteria
◎: 매우양호, ○: 양호, △: 보통, ×: 불량 ◎: Very good, ○: Good, △: Normal, ×: Poor
표 3을 참조하면, 아졸계 화합물과 테트라히드로 푸르푸릴알코올을 모두 함유한 본 발명의 무연땜납 플럭스 제거용 세정제 조성물인 실시예1 내지 7은 알루미늄 및 구리 양쪽에 대해 양호한 부식 방지 성능을 나타낸 반면, 아졸계 화합물을 함유하지 않은 비교예1 및 3의 경우 알루미늄 및 구리 배선이 동시에 형성된 기판에는 적용할 수 없는 것으로 나타내며, 구리만 형성된 기판에서도 양호한 결과를 나타내지 않음을 알 수 있다.Referring to Table 3, Examples 1 to 7 of the lead-free solder flux removal detergent composition of the present invention containing both an azole compound and tetrahydrofurfuryl alcohol showed good corrosion protection performance for both aluminum and copper, In Comparative Examples 1 and 3, which do not contain an azole compound, it is shown that it is not applicable to a substrate on which aluminum and copper wirings are formed at the same time.
Claims (7)
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| KR1020090072578A KR20110015063A (en) | 2009-08-07 | 2009-08-07 | Cleaner composition for removal of lead-free soldering flux |
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| KR1020090072578A KR20110015063A (en) | 2009-08-07 | 2009-08-07 | Cleaner composition for removal of lead-free soldering flux |
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| KR20110015063A true KR20110015063A (en) | 2011-02-15 |
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| KR1020090072578A KR20110015063A (en) | 2009-08-07 | 2009-08-07 | Cleaner composition for removal of lead-free soldering flux |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154241A (en) * | 2015-08-25 | 2015-12-16 | 俞凤鸣 | Environment-friendly cleaning agent |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154241A (en) * | 2015-08-25 | 2015-12-16 | 俞凤鸣 | Environment-friendly cleaning agent |
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