TW202020578A - Template for supporting mask and producing method thereof and producing method of mask integrated frame - Google Patents

Template for supporting mask and producing method thereof and producing method of mask integrated frame Download PDF

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TW202020578A
TW202020578A TW108136426A TW108136426A TW202020578A TW 202020578 A TW202020578 A TW 202020578A TW 108136426 A TW108136426 A TW 108136426A TW 108136426 A TW108136426 A TW 108136426A TW 202020578 A TW202020578 A TW 202020578A
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mask
metal film
frame
template
thickness
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TW108136426A
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Chinese (zh)
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TWI810381B (en
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李炳一
張澤龍
李永浩
金奉辰
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南韓商Tgo科技股份有限公司
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Priority claimed from KR1020180121322A external-priority patent/KR101986528B1/en
Priority claimed from KR1020190064213A external-priority patent/KR102242813B1/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00Subject matter not provided for in other groups of this subclass

Abstract

The present invention relates to a mask support template and a manufacturing method therefor, and a frame-integrated mask manufacturing method. A method for manufacturing a mask support template, according to the present invention, manufactures a template supporting a mask for forming OLED pixels so as to match same to a frame, and comprises the steps of: (a) preparing a mask metal film generated by rolling; (b) attaching the mask metal film to the template having a temporary adhesive part formed on one surface thereof; (c) reducing the thickness of the mask metal film attached to the template; and (d) manufacturing the mask by forming a mask pattern on the mask metal film.

Description

遮罩支撐模板及其製造方法與框架一體型遮罩的製造方法Shield support template and manufacturing method thereof and frame integrated shield manufacturing method

本發明是關於遮罩支撐模板及其製造方法與框架一體型遮罩的製造方法。更加詳細而言,本發明涉及可以使遮罩不發生變形且可以穩定地得到支撐並移動,使遮罩穩定地附著於框架上,且使各個遮罩之間的對準(align)精確的遮罩支撐模板及其製造方法與框架一體型遮罩的製造方法。The invention relates to a mask support template and a manufacturing method thereof and a frame integrated mask manufacturing method. In more detail, the present invention relates to a mask that can be stably supported and moved without deformation of the mask, that the mask is stably attached to the frame, and that the alignment between the masks is accurately aligned Cover support template and its manufacturing method and frame integrated shield manufacturing method.

作為OLED製造工藝中形成像素的技術,主要使用FMM(Fine Metal Mask)方法,該方法將薄膜形式的金屬遮罩(Shadow Mask,陰影遮罩)緊貼於基板且在所需位置上沉積有機物。As a technology for forming pixels in the OLED manufacturing process, a FMM (Fine Metal Mask) method is mainly used, which closely adheres a metal mask (shadow mask) in the form of a thin film to a substrate and deposits organic matter at a desired position.

在現有的OLED製造工藝中,將遮罩製造成條狀、板狀等之後,將遮罩焊接固定到OLED像素沉積框架並使用。一個遮罩上可以具備與一個顯示器對應的多個單元。另外,為了製造大面積OLED,可將多個遮罩固定於OLED像素沉積框架,在固定於框架的過程中,拉伸各個遮罩,以使其變得平坦。調節拉伸力以使遮罩的整體部分變得平坦是非常困難的作業。特別是,為了使各個單元全部變得平坦,同時對準尺寸僅為數μm至數十μm的遮罩圖案,需要微調施加到遮罩各側的拉伸力且需要實時確認對準狀態的高度作業要求。In the existing OLED manufacturing process, after the mask is manufactured into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. Multiple units corresponding to one display may be provided on one mask. In addition, in order to manufacture a large-area OLED, a plurality of masks may be fixed to the OLED pixel deposition frame, and in the process of fixing to the frame, each mask is stretched to make it flat. It is very difficult to adjust the stretching force to flatten the entire part of the mask. In particular, in order to flatten all the cells and align the mask pattern with a size of only a few μm to several tens of μm, it is necessary to fine-tune the tensile force applied to each side of the mask and to check the alignment state in real time. Claim.

儘管如此,在將多個遮罩固定於一個框架過程中,仍然存在遮罩之間及遮罩單元之間對準不好的問題。另外,在將遮罩焊接固定於框架的過程中,遮罩膜的厚度過薄且面積大,因此存在遮罩因荷重而下垂或者扭曲的問題,以及焊接過程中因焊接部分發生的皺紋、毛邊(burr)等使遮罩單元的對準錯開的問題等。Nevertheless, in the process of fixing multiple masks to one frame, there is still a problem of poor alignment between the masks and between the mask units. In addition, in the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem that the mask sags or twists due to load, and wrinkles and burrs that occur in the welded part during the welding process (Burr), etc. problems such as misalignment of the mask unit.

在超高清的OLED中,現有的QHD(Quarter High Definition)畫質為500-600PPI(pixel per inch),像素的尺寸達到約30-50μm,而4K UHD(Ultra High Definition)、8K UHD高清具有比之更高的~860PPI,~1600PPI等的解析度。如此,考慮到超高清的OLED的像素尺寸,需要將各單元之間的對準誤差縮減為數μm程度,超出這一誤差將導致產品的不良,所以產率可能極低。因此,需要開發能夠防止遮罩的下垂或者扭曲等變形且使對準精確的技術,以及將遮罩固定於框架的技術等。In ultra-high-definition OLED, the existing QHD (Quarter High Definition) image quality is 500-600PPI (pixel per inch), the pixel size reaches about 30-50μm, and 4K UHD (Ultra High Definition), 8K UHD HD has a comparison The higher resolution is ~860PPI, ~1600PPI, etc. In this way, considering the pixel size of the ultra-high-definition OLED, the alignment error between the units needs to be reduced to a degree of several μm. Exceeding this error will result in defective products, so the yield may be extremely low. Therefore, it is necessary to develop a technique capable of preventing deformation such as sagging or twisting of the mask and accurately aligning it, and a technique of fixing the mask to the frame and the like.

發明欲解決之課題 因此,本發明是為了解決上述現有技術中的問題而提出的,其目的在於提供使遮罩與框架能夠穩定地附著之遮罩支撐模板與其製造方法。Problems to be solved by invention Therefore, the present invention is proposed to solve the above-mentioned problems in the prior art, and an object of the present invention is to provide a mask support template and a method for manufacturing the same that enables the mask and the frame to be stably attached.

又,本發明的目的在於提供一種使遮罩不發生變形且可以穩定地支撐並移動的遮罩支撐模板與其製造方法。In addition, an object of the present invention is to provide a mask support template capable of stably supporting and moving the mask without deformation and a method of manufacturing the same.

又,本發明的目的在於提供一種能夠在遮罩上形成細微的遮罩圖案之遮罩支撐模板與其製造方法。In addition, an object of the present invention is to provide a mask support template capable of forming a fine mask pattern on a mask and a manufacturing method thereof.

又,本發明的目的在於提供一種將遮罩附著至框架上時能夠改善遮罩與框架的黏著性的遮罩支撐模板與其製造方法。In addition, an object of the present invention is to provide a mask support template that can improve the adhesion between the mask and the frame when the mask is attached to the frame, and a method of manufacturing the same.

又,本發明的目的在於提供一種將遮罩附著至框架上之後可反復使用的遮罩支撐模板與其製造方法。In addition, an object of the present invention is to provide a mask support template that can be used repeatedly after attaching a mask to a frame and a method for manufacturing the same.

又,本發明的目的在於提供一種遮罩與框架可構成一體型構造之框架一體型遮罩的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask in which the mask and the frame can form an integrated structure.

又,本發明的目的在於提供一種防止遮罩下垂或扭曲等的變形且可準確地進行對準之框架一體型遮罩的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask that can prevent deformation of the mask such as sagging or twisting and can be accurately aligned.

又,本發明的目的在於提供一種明顯縮短製造時間且使產率顯著提升之框架一體型遮罩的製造方法。 解決課題之方法In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask that significantly reduces manufacturing time and significantly improves productivity. Ways to solve the problem

本發明的上述目的藉由一種遮罩支撐模板的製造方法達成,該模板(template)用於支撐OLED像素形成用遮罩並使遮罩與框架對應,該方法包括以下步驟:(a)準備遮罩金屬膜;(b)將遮罩金屬膜黏合至一面形成有臨時黏合部之模板上;(c)縮減模板上黏合的遮罩金屬膜的厚度;以及(d)在遮罩金屬膜上形成遮罩圖案,以製造遮罩。The above object of the present invention is achieved by a manufacturing method of a mask support template, which is used to support a mask for forming an OLED pixel and make the mask correspond to the frame. The method includes the following steps: (a) preparing a mask Mask metal film; (b) bonding the mask metal film to the template on which a temporary bonding portion is formed; (c) reducing the thickness of the mask metal film bonded on the template; and (d) forming on the mask metal film Mask patterns to make masks.

另外,本發明的上述目的藉由一種遮罩支撐模板的製造方法達成,該模板(template)用於支撐OLED像素形成用遮罩並使遮罩與框架對應,該方法包括以下步驟: 準備遮罩金屬膜;(b)從遮罩金屬膜的第一面及與第一面相對的第二面縮減至少一部分厚度;(c)將遮罩金屬膜黏合至一面形成有臨時黏合部之模板上;以及(d)在遮罩金屬膜上形成遮罩圖案,以製造遮罩。In addition, the above object of the present invention is achieved by a method of manufacturing a mask support template for supporting a mask for OLED pixel formation and making the mask correspond to the frame. The method includes the following steps: preparing the mask Metal film; (b) Reduce at least a part of the thickness from the first surface of the mask metal film and the second surface opposite to the first surface; (c) Bond the mask metal film to a template on which a temporary bonding portion is formed; And (d) forming a mask pattern on the mask metal film to manufacture a mask.

在(a)步驟,準備遮罩金屬膜,且從遮罩金屬膜的第一面縮減至少一部分厚度,在(b)步驟,將遮罩金屬膜的第一面黏合至模板上,在(c)步驟,可以從與遮罩金屬膜的第一面相對的第二面縮減至少一部分厚度。In step (a), prepare the mask metal film, and reduce the thickness of at least a part of the first surface of the mask metal film, in step (b), bond the first surface of the mask metal film to the template, in (c ) Step, at least a part of the thickness may be reduced from the second surface opposite to the first surface of the mask metal film.

臨時黏合部可以是基於加熱可分離的黏合劑或者黏合片材,基於UV照射可分離的黏合劑或者黏合片材。The temporary bonding part may be a heat-separable adhesive or a bonding sheet, a UV-separating adhesive or a bonding sheet.

遮罩金屬膜之厚度縮減可以CMP(Chemical Mechanical Polishing)、化學濕蝕刻(chemical wet etching)、乾蝕刻(dry etching)中任意一個方法執行。The thickness reduction of the mask metal film can be performed by any of CMP (Chemical Mechanical Polishing), chemical wet etching (chemical wet etching), and dry etching (dry etching).

使用CMP方法縮減遮罩金屬膜的厚度時,遮罩金屬膜之一面上的表面粗糙度可減少。When using the CMP method to reduce the thickness of the mask metal film, the surface roughness on one side of the mask metal film can be reduced.

使用化學濕蝕刻、乾蝕刻縮減遮罩金屬膜的厚度時,可以在以後的步驟中進一步進行拋光,藉以減少遮罩金屬膜的一面的表面粗糙度。When using chemical wet etching or dry etching to reduce the thickness of the mask metal film, it may be further polished in subsequent steps to reduce the surface roughness of one side of the mask metal film.

將遮罩金屬膜的厚度可縮減至5μm至20μm。The thickness of the mask metal film can be reduced to 5 μm to 20 μm.

步驟(d)可以包括以下步驟:(d1)在遮罩金屬膜上形成圖案化之絕緣部;(d2)對絕緣部之間露出的遮罩金屬膜部分進行蝕刻以形成遮罩圖案;以及(d3)去除絕緣部。Step (d) may include the following steps: (d1) forming a patterned insulating portion on the mask metal film; (d2) etching the portion of the mask metal film exposed between the insulating portions to form a mask pattern; and ( d3) Remove the insulation.

以遮罩金屬膜的厚度為基準,當第一面為0%且第二面為100%時,遮罩可使用相當於遮罩金屬膜厚度的10%至90%部分中的至少一部分。Based on the thickness of the mask metal film, when the first surface is 0% and the second surface is 100%, the mask can use at least a portion of the portion corresponding to 10% to 90% of the thickness of the mask metal film.

另外,本發明的上述目的藉由一種遮罩支撐模板達成,該模板用於支撐OLED像素形成用遮罩並使遮罩與框架對應,該遮罩支撐模板包括:一模板;一臨時黏合部,其形成於模板上;以及一遮罩,其藉由夾設臨時黏合部黏合至模板上,且形成有遮罩圖案,遮罩的厚度為5μm至20μm。In addition, the above object of the present invention is achieved by a mask support template for supporting a mask for OLED pixel formation and making the mask correspond to the frame. The mask support template includes: a template; a temporary bonding portion, It is formed on the template; and a mask, which is bonded to the template by interposing a temporary adhesive part, and a mask pattern is formed, and the thickness of the mask is 5 μm to 20 μm.

遮罩可包括從經軋延(rolling)工藝製造的遮罩金屬膜(sheet)的上表面及下表面縮減至少一部分厚度而形成之中央部。The mask may include a central portion formed by reducing at least a part of the thickness from the upper surface and the lower surface of the mask metal film manufactured by the rolling process.

以遮罩金屬膜的厚度為基準,當上表面為0%且下部表面為100%時,遮罩使用相當於遮罩金屬膜厚度的10%至90%部分中的至少一部分。Based on the thickness of the mask metal film, when the upper surface is 0% and the lower surface is 100%, the mask uses at least part of the portion corresponding to 10% to 90% of the thickness of the mask metal film.

臨時黏合部可以是基於加熱可分離的黏合劑或者黏合片材,基於UV照射可分離的黏合劑或者黏合片材。The temporary bonding part may be a heat-separable adhesive or a bonding sheet, a UV-separating adhesive or a bonding sheet.

與遮罩的焊接部對應之模板的邊緣部部分可形成有雷射貫穿孔。A laser penetrating hole may be formed in the edge portion of the template corresponding to the welding portion of the mask.

模板可包括晶圓(wafer)、玻璃(glass)、氧化矽(silica)、耐熱玻璃、石英(quartz)、氧化鋁(Al2 O3 )、硼矽酸玻璃(borosilicate glass)中的任意一種材料。The template may include any one of wafer, glass, silica, heat-resistant glass, quartz, alumina (Al 2 O 3 ), and borosilicate glass .

另外,本發明的上述目的藉由一種框架一體型遮罩的製造方法達成,框架一體型遮罩由由至少一個遮罩與用於支撐遮罩的框架形成為一體,其中該方法包括以下步驟:(a)在具有至少一個遮罩單元區域之框架上,裝載利用請求項1或2所述之製造方法製造的模板,並使遮罩與框架的遮罩單元區域對應以及(b)將遮罩附著至框架。發明效果 In addition, the above object of the present invention is achieved by a method for manufacturing a frame-integrated mask, which is formed by integrating at least one mask with a frame for supporting the mask, wherein the method includes the following steps: (A) On the frame having at least one mask unit area, load the template manufactured by the manufacturing method described in claim 1 or 2, and make the mask correspond to the mask unit area of the frame and (b) mask Attach to the frame. Effect of invention

根據如上構成的本發明,可以使遮罩與框架的附著穩定地進行。According to the present invention configured as described above, the attachment of the mask to the frame can be performed stably.

又,根據本發明,可以使遮罩不發生變形且可以穩定地得到支撐並移動。In addition, according to the present invention, the mask can be stably supported and moved without being deformed.

又,根據本發明,能夠在遮罩上形成細微的遮罩圖案。Furthermore, according to the present invention, a fine mask pattern can be formed on the mask.

又,根據本發明,將遮罩附著至框架上時,能夠改善遮罩與框架的黏著性。Furthermore, according to the present invention, when the mask is attached to the frame, the adhesion between the mask and the frame can be improved.

又,根據本發明,將遮罩附著至框架上之後可反復使用。Furthermore, according to the present invention, the mask can be used repeatedly after being attached to the frame.

又,根據本發明,遮罩與框架可構成一體型結構。Furthermore, according to the present invention, the cover and the frame can form an integrated structure.

又,根據本發明,可防止遮罩下垂或扭曲等的變形,並且可準確地進行對準。In addition, according to the present invention, deformation such as sagging or twisting of the mask can be prevented, and alignment can be accurately performed.

又,根據本發明,可使製造時間顯著地縮短,且使產率顯著上昇。In addition, according to the present invention, the manufacturing time can be significantly shortened, and the yield can be significantly increased.

後述的對於本發明的詳細說明將參照附圖,該附圖將能夠實施本發明的特定實施例作為示例示出。充分詳細地說明這些實施例,以使所屬技術領域中具有通常知識者能夠實施本發明。應當理解,本發明的各種實施例雖然彼此不同,但是並非相互排斥。例如,在此記載的特定形狀、結構及特性與一實施例有關,在不脫離本發明的精神及範圍的情況下,能夠實現為其他實施例。另外,應當理解,各個公開的實施例中的個別構成要素的位置或配置,在不脫離本發明的精神及範圍的情況下,能夠進行變更。因此,後述的詳細說明不應被視為具有限制意義,只要適當地說明,則本發明的範圍僅由所附的申請專利範圍及與其等同的所有範圍限定。圖式中相似的符號從多方面表示相同或相似的功能,為了方便起見,長度、面積、厚度及其形狀可以誇大表示。The detailed description of the present invention described later will refer to the accompanying drawings, which show specific embodiments capable of implementing the present invention as examples. These embodiments are described in sufficient detail to enable those skilled in the art to implement the present invention. It should be understood that although the various embodiments of the present invention are different from each other, they are not mutually exclusive. For example, the specific shapes, structures, and characteristics described herein are related to one embodiment, and can be implemented as other embodiments without departing from the spirit and scope of the present invention. In addition, it should be understood that the position or arrangement of the individual constituent elements in each disclosed embodiment can be changed without departing from the spirit and scope of the present invention. Therefore, the following detailed description should not be regarded as limiting, and as long as it is properly described, the scope of the present invention is limited only by the scope of the attached patent application and all ranges equivalent thereto. Similar symbols in the drawings represent the same or similar functions in many ways. For convenience, the length, area, thickness, and shape can be exaggerated.

以下,將參照圖式對本發明的優選實施例進行詳細說明,以便所屬技術領域中具有通常知識者能夠容易地實施本發明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

圖1是示出現有的OLED像素沉積用遮罩10的概略圖。FIG. 1 is a schematic diagram showing a conventional mask 10 for OLED pixel deposition.

參照圖1,現有的遮罩10可以條式(Stick-Type)或者板式(Plate-Type)製造。圖1的(a)中示出的遮罩10作為條式遮罩,可以將條的兩側焊接固定於OLED像素沉積框架並使用。圖1的(b)中示出的遮罩100作為板式(Plate-Type)遮罩,可以使用於大面積的像素形成工藝。Referring to FIG. 1, the existing mask 10 may be manufactured in stick-type or plate-type. The mask 10 shown in (a) of FIG. 1 serves as a strip mask, and both sides of the strip can be welded and fixed to the OLED pixel deposition frame and used. The mask 100 shown in (b) of FIG. 1 can be used as a plate-type (Plate-Type) mask in a large-area pixel formation process.

遮罩10的主體(Body,或者遮罩膜11)具備多個顯示單元C。一個單元C與智慧手機等的一個顯示器(display)對應。單元C中形成有像素圖案P,以便與顯示器的各個像素對應。放大單元C時,顯示與R、G、B對應的多個像素圖案P。作為一例,在單元C中形成像素圖案P,以便具有70×140解析度。即,大量的像素圖案P形成集合,以構成一個單元C,並且多個單元C可以形成於遮罩10。The body (body or mask film 11) of the mask 10 is provided with a plurality of display units C. One unit C corresponds to one display such as a smartphone. A pixel pattern P is formed in the cell C so as to correspond to each pixel of the display. When the unit C is enlarged, a plurality of pixel patterns P corresponding to R, G, and B are displayed. As an example, the pixel pattern P is formed in the cell C so as to have a resolution of 70×140. That is, a large number of pixel patterns P form a set to constitute one unit C, and a plurality of units C may be formed on the mask 10.

圖2是示出現有的將遮罩10附著於框架20的過程的概略圖。圖3是示出在現有的拉伸F1~F2遮罩10的過程中發生單元之間的對準誤差的概略圖。以圖1的(a)示出的具備6個單元C(C1~C6)的條式遮罩10為例進行說明。FIG. 2 is a schematic diagram showing a conventional process of attaching the mask 10 to the frame 20. FIG. 3 is a schematic diagram showing that an alignment error between cells occurs during the conventional stretching of the F1 to F2 mask 10. The strip mask 10 including six units C (C1 to C6) shown in (a) of FIG. 1 will be described as an example.

參照圖2的(a),首先,應將條式遮罩10平坦地展開。沿著條式遮罩10的長軸方向施加拉伸力F1~F2,隨著拉伸,展開條式遮罩10。在該狀態下,將條式遮罩10裝載於方框形狀的框架20上。條式遮罩10的單元C1~C6將位於框架20的框內部空白區域部分。框架20的尺寸可以足以使一個條式遮罩10的單元C1~C6位於框內部空白區域,也可以足以使多個條式遮罩10的單元C1~C6位於框內部空白區域。Referring to (a) of FIG. 2, first, the strip mask 10 should be spread out flat. Tensile forces F1 to F2 are applied along the long axis direction of the strip mask 10, and the strip mask 10 is unfolded as it is stretched. In this state, the strip mask 10 is mounted on the frame 20 in a frame shape. The cells C1 to C6 of the strip mask 10 will be located in the blank area inside the frame of the frame 20. The size of the frame 20 may be sufficient to make the units C1 to C6 of one strip mask 10 located in the blank area inside the frame, or it may be enough to make the units C1 to C6 of multiple strip masks 10 located in the blank area inside the frame.

參照圖2的(b),微調施加至條式遮罩10的各側的拉伸力F1~F2,同時對準後,隨著焊接W條式遮罩10側面的一部分,將條式遮罩10和框架20彼此連接。圖2的(c)示出彼此連接的條式遮罩10和框架的側截面。Referring to (b) of FIG. 2, finely adjust the tensile forces F1 to F2 applied to each side of the strip mask 10, and after the alignment, as the part of the side surface of the strip mask 10 is welded, the strip mask 10 and the frame 20 are connected to each other. (C) of FIG. 2 shows a side section of the strip mask 10 and the frame connected to each other.

參照圖3,儘管微調施加至條式遮罩10的各側的拉伸力F1~F2,但是顯示出遮罩單元C1~C3彼此之間對準不好的問題。例如,單元C1~C3的圖案P之間的距離D1~D1”、D2~D2”彼此不同,或者圖案P歪斜。由於條式遮罩10具有包括多個(作為一例,為6個)單元C1~C6的大面積,且具有數十μm的非常薄的厚度,因此容易因荷重而下垂或者扭曲。另外,調節拉伸力F1~F2,以使各個單元C1~C6全部變得平坦,同時通過顯微鏡實施確認各個單元C1~C6之間的對準狀態是非常困難的作業。Referring to FIG. 3, although fine adjustment of the stretching forces F1 ˜F2 applied to the sides of the strip mask 10, the problem is that the mask units C1 ˜ C3 are not well aligned with each other. For example, the distances D1 to D1" and D2 to D2" between the patterns P of the cells C1 to C3 are different from each other, or the pattern P is skewed. Since the strip mask 10 has a large area including a plurality (6 cells as an example) of cells C1 to C6 and has a very thin thickness of several tens of μm, it is easy to sag or twist due to load. In addition, it is very difficult to adjust the tensile forces F1 to F2 so that all the cells C1 to C6 are flat, and confirming the alignment state between the cells C1 to C6 with a microscope.

因此,拉伸力F1~F2的微小誤差可能引起條式遮罩10各單元C1~C3的拉伸或者展開程度的誤差,由此,導致遮罩圖案P之間的距離D1~D1”、D2~D2”不同。雖然完美地對準以使誤差為0是非常困難的,但是為了避免尺寸為數μm至數十μm的遮罩圖案P對超高清OLED的像素工藝造成壞影響,對準誤差優選不大於3μm。將如此相鄰的單元之間的對準誤差稱為像素定位精度(pixel position accuracy,PPA)。Therefore, a slight error in the stretching forces F1 to F2 may cause an error in the degree of stretching or unfolding of the units C1 to C3 of the strip mask 10, thereby causing the distances D1 to D1", D2 between the mask patterns P ~D2" is different. Although it is very difficult to perfectly align so that the error is 0, in order to avoid the mask pattern P having a size of several μm to several tens of μm from adversely affecting the pixel process of the ultra-high-definition OLED, the alignment error is preferably not more than 3 μm. The alignment error between such adjacent units is called pixel position accuracy (PPA).

另外,將大概6-20個條式遮罩10分別連接在一個框架20,同時使多個條式遮罩10之間,以及條式遮罩10的多個單元C-C6之間的對準狀態精確是非常困難的作業,並且只能增加基於對準的工藝時間,這成為降低生產性的重要理由。In addition, approximately 6-20 strip masks 10 are respectively connected to one frame 20, and the alignment between the plurality of strip masks 10 and the plurality of cells C-C6 of the strip mask 10 are simultaneously aligned Precise state is a very difficult task, and can only increase the process time based on alignment, which becomes an important reason for reducing productivity.

另一方面,將條式遮罩10連接固定至框架20後,施加至條式遮罩10的拉伸力F1~F2能夠反向地作用於框架20。即,由於拉伸力F1~F2而繃緊拉伸的條式遮罩10連接在框架20後,能夠將張力(tension)作用於框架20。通常,該張力不大,不會對框架20產生大的影響,但是在框架20的尺寸實現小型化且剛性變低的情況下,這種張力可能使框架20細微變形。如此,可能發生破壞多個單元C~C6間的對準狀態的問題。On the other hand, after the strip mask 10 is connected and fixed to the frame 20, the tensile forces F1 to F2 applied to the strip mask 10 can act on the frame 20 in the reverse direction. That is, after the strip mask 10 stretched and stretched due to the tensile forces F1 to F2 is connected to the frame 20, it is possible to apply tension to the frame 20. Normally, this tension is not large, and it does not have a great influence on the frame 20. However, when the size of the frame 20 is miniaturized and the rigidity becomes low, such tension may slightly deform the frame 20. In this way, a problem may occur that the alignment state between the plurality of cells C to C6 is broken.

鑒於此,本發明提出能夠使遮罩100與框架200形成一體式結構的框架200以及框架一體型遮罩。與框架200形成一體的遮罩100不僅防止發生下垂或者扭曲等變形,並且能夠與框架200精確地對準。當遮罩100連接至框架200時,不對遮罩100施加任何拉伸力,因此遮罩100連接至框架200後,對遮罩200不施加引起變形的張力。並且,能夠顯著地縮短將遮罩100一體地連接至框架200上的製造時間,並且顯著提升產率。In view of this, the present invention proposes a frame 200 and a frame-integrated mask capable of forming the mask 100 and the frame 200 into an integrated structure. The cover 100 integrated with the frame 200 not only prevents deformation such as sagging or twisting, but also can be accurately aligned with the frame 200. When the mask 100 is connected to the frame 200, no tensile force is applied to the mask 100, so after the mask 100 is connected to the frame 200, no tension is applied to the mask 200 that causes deformation. Also, the manufacturing time for integrally connecting the mask 100 to the frame 200 can be significantly shortened, and the productivity can be significantly improved.

圖4是示出本發明之一實施例涉及的框架一體型遮罩的主視圖(圖4的(a))及側截面圖(圖4的(b)),圖5是示出本發明之一實施例涉及的框架的主視圖(圖5的(a))及側截面圖(圖5的b)。4 is a front view (FIG. 4(a)) and a side cross-sectional view (FIG. 4(b)) showing a frame-integrated mask according to an embodiment of the present invention, and FIG. 5 is a diagram showing the present invention. A front view ((a) of FIG. 5) and a side sectional view (b of FIG. 5) of the frame according to an embodiment.

參照圖4及圖5,框架一體型遮罩可以包括多個遮罩100及一個框架200。換句話說,將多個遮罩100分別附著於框架200的形態。以下,為了便於說明,以四角形狀的遮罩100為例進行說明,但是遮罩100在附著於框架200之前,可以是兩側具備用於夾持的突出部的條式遮罩形狀,遮罩100附著於框架200後,可以去除突出部。4 and 5, the frame-integrated mask may include a plurality of masks 100 and a frame 200. In other words, the form in which the plurality of masks 100 are attached to the frame 200 respectively. In the following, for convenience of explanation, a quadrangular mask 100 is taken as an example for description, but before the mask 100 is attached to the frame 200, it may be a strip mask shape having a protrusion for clamping on both sides, the mask After 100 is attached to the frame 200, the protrusion can be removed.

各個遮罩100上形成有多個遮罩圖案P,一個遮罩100可以形成有一個單元C。一個遮罩單元C可以與智慧手機等的一個顯示器對應。A plurality of mask patterns P are formed on each mask 100, and one unit C may be formed in one mask 100. One mask unit C may correspond to one display of a smartphone or the like.

遮罩100可使用經軋延(rolling)工藝生成的金屬片材(sheet)。遮罩100可以是熱膨脹係數約為1.0×10-6 /℃的恆範鋼(invar)或約為1.0×10-7 /℃的超恆範鋼(super invar)材料。由於這種材料的遮罩100的熱膨脹係數非常低,遮罩的圖案形狀因熱能變形的可能性小,在製造高解析度的OLED中,可以用作FMM(Fine Metal Mask)、陰影遮罩(Shadow Mask)。此外,考慮到最近正在開發在溫度變化值不大的範圍內實施像素沉積工藝的技術,遮罩100也可以是熱膨脹係數比之略大的鎳(Ni)、鎳-鈷(Ni-Co)等材料。The mask 100 may use a metal sheet generated by a rolling process. The mask 100 may be an invar with a thermal expansion coefficient of about 1.0×10 −6 /°C or a super invar material with about 1.0×10 −7 /°C. Since the thermal expansion coefficient of the mask 100 of this material is very low, the pattern shape of the mask is less likely to be deformed by thermal energy, and it can be used as a FMM (Fine Metal Mask) or shadow mask in the manufacture of high-resolution OLEDs. Shadow Mask). In addition, considering that a technology for implementing a pixel deposition process within a range with a small temperature change value is being developed recently, the mask 100 may also be nickel (Ni), nickel-cobalt (Ni-Co), etc. with a slightly larger thermal expansion coefficient. material.

經軋延工藝製造的金屬片材在製造工藝上可具有數十至數百μm的厚度。具有如此之厚的金屬片材為了使後述的遮罩圖案P能夠細微地形成,其厚度需要更薄些。可以對金屬片材進一步執行藉由CMP等方法使厚度變為薄於約50μm以下之工藝。遮罩的厚度較佳為約2μm至50μm,更佳為約5μm至20μm。然而,並非局限於此。The metal sheet manufactured by the rolling process may have a thickness of tens to hundreds of μm in the manufacturing process. In order to enable the mask pattern P described later to be finely formed, the thickness of the metal sheet having such a thickness needs to be thinner. The process of making the thickness thinner than about 50 μm by CMP or the like can be further performed on the metal sheet. The thickness of the mask is preferably about 2 μm to 50 μm, and more preferably about 5 μm to 20 μm. However, it is not limited to this.

就使用經軋延工藝製造的金屬片材的情況而言,雖存在厚度比藉由電鑄形成的鍍膜的厚度,但由於熱膨脹係數CTE低,故無需進行額外的熱處理工藝,且具有耐腐蝕性強的優點。In the case of using a metal sheet manufactured by the rolling process, although there is a thickness that is thicker than the thickness of the plating film formed by electroforming, the thermal expansion coefficient CTE is low, so no additional heat treatment process is required and it is corrosion-resistant Strong advantages.

另外,並非一定使用經軋延工藝生成的金屬片材,亦可以使用經電鑄(electroforming)生成的金屬片材。此時,可以進一步執行熱處理工藝,以降低電鑄片材的熱膨脹係數。作為電鑄的陰極(cathode)電極使用的基材可以是 導電性材料。特別是,金屬因金屬氧化物,多晶因夾雜物、晶界無法對陰極施加均勻的電場,藉以會使鍍覆金屬片材的一部分形成得不均勻,故可使用單晶材料的母板(或者陰極)。特別是,可以是單晶矽材料,且亦可以使用Ti、Cu、Ag等金屬;GaN、SiC、GaAs、GaP、AlN、InN、InP、Ge等半導體;石墨(graphite)、石墨烯(graphene)等碳材料;包含CH3 NH3 PbCl3 、CH3 NH3 PbBr3 、CH3 NH3 PbI3 、SrTiO3 之鈣鈦礦(perovskite)結構等超導電體用單晶陶瓷;飛行器零部件用單晶超耐熱合金等。為了具有導電性,可以在一部分或全部執行摻雜。單晶材料由於沒有缺陷,電鑄時在表面全部形成均勻的電場,因此生成均勻的金屬片材,藉此製造的框架一體型遮罩100、200可以進一步改善OLED像素的畫質水準。In addition, the metal sheet produced by the rolling process is not necessarily used, and the metal sheet produced by electroforming can also be used. At this time, a heat treatment process may be further performed to reduce the thermal expansion coefficient of the electroformed sheet. The base material used as an electroformed cathode electrode may be a conductive material. In particular, due to metal oxides, polycrystalline inclusions, and grain boundaries, it is not possible to apply a uniform electric field to the cathode, so that a part of the plated metal sheet is formed unevenly, so a single crystal material master can be used ( Or cathode). In particular, it can be a single crystal silicon material, and metals such as Ti, Cu, Ag; GaN, SiC, GaAs, GaP, AlN, InN, InP, Ge and other semiconductors; graphite (graphite), graphene (graphene) like carbon material; comprising CH 3 NH 3 PbCl superconductor 3, CH 3 NH 3 PbBr 3 , CH 3 NH 3 PbI 3, SrTiO 3 perovskite of (Transition of perovskite) single crystal ceramic structure; a single aircraft parts Crystal super heat resistant alloy, etc. In order to have conductivity, doping may be performed in part or in whole. The single crystal material has no defects, and a uniform electric field is formed on the surface during electroforming. Therefore, a uniform metal sheet is generated. The frame-integrated masks 100 and 200 manufactured thereby can further improve the image quality of OLED pixels.

框架200以能夠附著多個遮罩100的形式形成。包括最週邊邊緣在內,框架200可以包括沿著第一方向(例如,橫向)、第二方向(例如,竪向)形成的多個角部。這種多個角部可以在框架200上劃分用於附著遮罩100的區域。The frame 200 is formed in a form capable of attaching a plurality of masks 100. Including the most peripheral edge, the frame 200 may include a plurality of corners formed along the first direction (eg, lateral direction) and the second direction (eg, vertical direction). Such multiple corners may define a region on the frame 200 for attaching the mask 100.

框架200可以包括大概呈四角形狀、方框形狀的邊緣框架部210。邊緣框架部210的內部可以是中空形狀。即,邊緣框架部210可以包括中空區域R。框架200可以由恒範鋼、超恒範鋼、鋁、鈦等金屬材料形成,考慮到熱變形,優選由與遮罩具有相同熱膨脹係數的恒範鋼、超恒範鋼、鎳、鎳-鈷等材料形成,這些材料均可應用於作為框架200的構成要素的邊緣框架部210、遮罩單元片材部220。The frame 200 may include an edge frame portion 210 having a substantially rectangular shape or a square shape. The inside of the edge frame part 210 may have a hollow shape. That is, the edge frame part 210 may include the hollow region R. The frame 200 may be formed of metal materials such as constant steel, super constant steel, aluminum, titanium, etc. In consideration of thermal deformation, it is preferably made of constant steel, super constant steel, nickel, nickel-cobalt with the same thermal expansion coefficient as the mask These materials can be applied to the edge frame portion 210 and the mask unit sheet portion 220 as constituent elements of the frame 200.

另外,框架200具備多個遮罩單元區域CR,並且可以包括連接至邊緣框架部210的遮罩單元片材部220。遮罩單元片材部220與遮罩100相同,可通過軋延形成,或者通過電鑄等其他的成膜工藝形成。另外,遮罩單元片材部220可以通過雷射劃綫、蝕刻等在平面狀片材(sheet)上形成多個遮罩單元區域CR後,連接至邊緣框架部210。或者,遮罩單元片材部220可以將平面狀的片材連接至邊緣框架部210後,通過雷射劃線、蝕刻等形成多個遮罩單元區域CR。本說明書中主要對首先在遮罩單元片材部220形成多個遮罩單元區域CR後,連接至邊緣框架部210的情況進行說明。In addition, the frame 200 is provided with a plurality of mask unit regions CR, and may include the mask unit sheet portion 220 connected to the edge frame portion 210. The mask unit sheet portion 220 is the same as the mask 100 and can be formed by rolling, or by other film forming processes such as electroforming. In addition, the mask unit sheet portion 220 may be connected to the edge frame portion 210 after forming a plurality of mask unit regions CR on a planar sheet by laser scribing, etching, or the like. Alternatively, the mask unit sheet portion 220 may form a plurality of mask unit regions CR by laser scribing, etching, or the like after connecting a planar sheet to the edge frame portion 210. In this specification, the case where first a plurality of mask unit regions CR is formed in the mask unit sheet portion 220 and then connected to the edge frame portion 210 will be described.

遮罩單元片材部220可以包括邊緣片材部221與第一柵格片材部223、第二柵格片材部225中的至少一種。邊緣片材部221及第一柵格片材部223、第二柵格片材部225是指在同一片材上劃分的各個部分,它們彼此之間形成為一體。The mask unit sheet portion 220 may include at least one of the edge sheet portion 221 and the first grid sheet portion 223 and the second grid sheet portion 225. The edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 refer to portions divided on the same sheet, and they are formed integrally with each other.

邊緣片材部221可以實質上連接至邊緣框架部210。因此,邊緣片材部221可以具有與邊緣框架部210對應的大致四角形狀、方框形狀。The edge sheet portion 221 may be substantially connected to the edge frame portion 210. Therefore, the edge sheet portion 221 may have a substantially square shape or a square shape corresponding to the edge frame portion 210.

另外,第一柵格片材部223可以沿著第一方向(橫向)延伸形成。第一柵格片材部223以直綫形態形成,其兩端可以連接至邊緣片材部221。當遮罩單元片材部220包括多個第一柵格片材部223時,各第一柵格片材部223優選具有相同的間距。In addition, the first grid sheet portion 223 may be formed to extend along the first direction (lateral direction). The first grid sheet portion 223 is formed in a straight line shape, and both ends thereof may be connected to the edge sheet portion 221. When the mask unit sheet portion 220 includes a plurality of first grid sheet portions 223, each first grid sheet portion 223 preferably has the same pitch.

另外,進一步地,第二柵格片材部225可以沿著第二方向(竪向)延伸形成,第二栅格片材部225以直綫形態形成,其兩端可以連接至邊緣片材部221。第一柵格片材部223和第二柵格片材部225可以彼此垂直交叉。當遮罩單元片材部220包括多個第二柵格片材部225時,各第二柵格片材部225間優選具有相同的間距。In addition, further, the second grid sheet portion 225 may be formed to extend along the second direction (vertical direction), the second grid sheet portion 225 is formed in a linear form, and both ends thereof may be connected to the edge sheet portion 221 . The first grid sheet portion 223 and the second grid sheet portion 225 may cross each other perpendicularly. When the mask unit sheet portion 220 includes a plurality of second grid sheet portions 225, each second grid sheet portion 225 preferably has the same pitch.

另一方面,第一栅格片材部223之間的間距與第二柵格片材部225之間的間距,可以根據遮罩單元C的尺寸而相同或不同。On the other hand, the pitch between the first grid sheet portion 223 and the pitch between the second grid sheet portion 225 may be the same or different depending on the size of the mask unit C.

第一柵格片材部223與第二柵格片材部225雖然具有薄膜形態的薄的厚度,但是垂直於長度方向的截面的形狀可以是諸如矩形、梯形的四邊形形狀、三角形形狀等,邊、角的一部分可以形成圓形。截面形狀可以在雷射劃綫、蝕刻等過程中進行調節。Although the first grid sheet portion 223 and the second grid sheet portion 225 have a thin thickness in the form of a thin film, the shape of the cross section perpendicular to the longitudinal direction may be such as a rectangular shape, a trapezoidal quadrangular shape, a triangular shape, etc. , A part of the corner can form a circle. The cross-sectional shape can be adjusted during laser scribing, etching, etc.

邊緣框架部210的厚度可以大於遮罩單元片材部220的厚度。由於邊緣框架部210負責框架200的整體剛性,可以以數mm至數cm的厚度形成。The thickness of the edge frame part 210 may be greater than the thickness of the mask unit sheet part 220. Since the edge frame part 210 is responsible for the overall rigidity of the frame 200, it may be formed with a thickness of several mm to several cm.

就遮罩單元片材部220而言,實際上製造厚片材的工藝比較困難,若過厚,則有可能在OLED像素沉積工藝中有機物源600(參照圖18)堵塞通過遮罩100的路徑。相反,若過薄,則有可能難以確保足以支撐遮罩100的剛性。由此,遮罩單元片材部220優選比邊緣框架部210的厚度薄,但是比遮罩100更厚。遮罩單元片材部220的厚度可以約為0.1mm至1mm。並且,第一柵格片材部223、第二柵格片材部225的寬度可以約為1~5mm。As far as the mask unit sheet portion 220 is concerned, the process of manufacturing a thick sheet is actually difficult. If it is too thick, the organic matter source 600 (see FIG. 18) may block the path through the mask 100 in the OLED pixel deposition process . Conversely, if it is too thin, it may be difficult to ensure sufficient rigidity to support the mask 100. Thus, the mask unit sheet portion 220 is preferably thinner than the thickness of the edge frame portion 210, but thicker than the mask 100. The thickness of the mask unit sheet portion 220 may be about 0.1 mm to 1 mm. In addition, the width of the first grid sheet portion 223 and the second grid sheet portion 225 may be approximately 1 to 5 mm.

在平面狀片材中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外,可以提供多個遮罩單元區域CR(CR11~CR56)。從另一個角度來說,遮罩單元區域CR可以是指在邊緣框架部210的中空區域R中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外的空白區域。In the planar sheet, in addition to the area occupied by the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225, a plurality of mask unit regions CR (CR11 to CR56) may be provided . From another perspective, the mask unit region CR may refer to the hollow region R of the edge frame portion 210 except for the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 A blank area outside the occupied area.

隨著遮罩100的單元C與該遮罩單元區域CR對應,實質上可以用作通過遮罩圖案P沉積OLED的像素的通道。如前所述,一個遮罩單元C與智慧手機等的一個顯示器對應。一個遮罩100中可以形成有用於構成一個單元C的遮罩圖案P。或者,一個遮罩100具備多個單元C且各個單元C可以與框架200的各個單元區域CR對應,但是為了精確地對準遮罩100,需要避免大面積的遮罩100,優選為具備一個單元C的小面積遮罩100。或者,也可以是具有多個單元C的一個遮罩100與遮罩200的一個單元區域CR對應。此時,為了精確地對準,可以考慮對應具有2-3個單元C的遮罩100。As the cell C of the mask 100 corresponds to the mask cell region CR, it can be substantially used as a channel for depositing pixels of the OLED through the mask pattern P. As described above, one mask unit C corresponds to one display of a smartphone or the like. A mask pattern P for constituting one cell C may be formed in one mask 100. Alternatively, one mask 100 includes a plurality of cells C and each cell C may correspond to each cell region CR of the frame 200, but in order to accurately align the mask 100, it is necessary to avoid a large-area mask 100, preferably one unit C's small area mask 100. Alternatively, one mask 100 having a plurality of cells C may correspond to one cell region CR of the mask 200. At this time, in order to accurately align, a mask 100 corresponding to 2-3 cells C may be considered.

遮罩200具備多個遮罩單元區域CR,可以將各個遮罩100以各個遮罩單元C與各個遮罩單元區域CR分別對應的方式附著。各個遮罩100可以包括形成有多個遮罩圖案P的遮罩單元C及遮罩單元C周邊的虛擬部(相當於除了單元C以外的遮罩膜110部分)。虛擬部可以只包括遮罩膜110,或者可以包括形成有與遮罩圖案P類似形態的規定的虛擬圖案的遮罩膜110。遮罩單元C與框架200的遮罩單元區域CR對應,虛擬部的一部分或者全部可以附著於框架200(遮罩單元片材部220)。由此,遮罩100和框架200可以形成一體式結構。The mask 200 includes a plurality of mask unit regions CR, and each mask 100 can be attached so that each mask unit C corresponds to each mask unit region CR. Each mask 100 may include a mask unit C in which a plurality of mask patterns P are formed, and a virtual part around the mask unit C (equivalent to a portion of the mask film 110 other than the unit C). The dummy part may include only the mask film 110, or may include the mask film 110 formed with a prescribed dummy pattern in a form similar to the mask pattern P. The mask unit C corresponds to the mask unit region CR of the frame 200, and part or all of the virtual part may be attached to the frame 200 (mask unit sheet part 220). Thus, the cover 100 and the frame 200 can form an integrated structure.

另一方面,根據另一實施例,框架不是以將遮罩單元片材部220附著於邊緣框架部210的方式製造,而是可以使用在邊緣框架部210的中空區域R部分直接形成與邊緣框架部210成為一體的柵格框架(相當於柵格片材部223、225)的框架。這種形態的框架也包括至少一個遮罩單元區域CR,可以使遮罩100與遮罩單元區域CR對應,以製造框架一體型遮罩。On the other hand, according to another embodiment, the frame is not manufactured by attaching the mask unit sheet portion 220 to the edge frame portion 210, but may be formed directly in the hollow region R portion of the edge frame portion 210 with the edge frame The part 210 becomes a frame of an integrated grid frame (corresponding to the grid sheet parts 223, 225). The frame of this form also includes at least one mask unit region CR, and the mask 100 can be made to correspond to the mask unit region CR to manufacture a frame-integrated mask.

以下,對框架一體型遮罩的製造過程進行說明。Hereinafter, the manufacturing process of the frame-integrated mask will be described.

首先,可以提供圖4及圖5中所述的框架200。圖6是示出本發明的一實施例涉及的框架200的製造過程的概略圖。First, the frame 200 described in FIGS. 4 and 5 may be provided. FIG. 6 is a schematic diagram showing the manufacturing process of the frame 200 according to an embodiment of the present invention.

參照圖6的(a),提供邊緣框架部210。邊緣框架部210可以是包括中空區域R的方框形狀。Referring to (a) of FIG. 6, an edge frame portion 210 is provided. The edge frame part 210 may have a square shape including a hollow region R.

其次,參照圖6的(b),製造遮罩單元片材部220。使用軋延或者其他的成膜工藝,製造平面狀的片材後,通過雷射劃綫、蝕刻等去除遮罩單元區域CR部分,從而可以製造遮罩單元片材部220。本說明書中,以形成6×5的遮罩單元區域CR(CR11~CR56)為例進行說明。可以存在5個第一柵格片材部223與4個第二柵格片材部225。Next, referring to (b) of FIG. 6, the mask unit sheet portion 220 is manufactured. After rolling or another film forming process, after manufacturing the planar sheet, the mask unit region CR portion is removed by laser scribing, etching, etc., so that the mask unit sheet portion 220 can be manufactured. In this specification, a 6×5 mask cell region CR (CR11 to CR56) will be described as an example. There may be five first grid sheet sections 223 and four second grid sheet sections 225.

然後,可以使遮罩單元片材部220與邊緣框架部210對應。在對應的過程中,可以在拉伸F1~F4遮罩單元片材部220的所有側部以使遮罩單元片材部220平坦伸展的狀態下,使邊緣片材部221與邊緣框架部210對應。在一側部也能以多個點(作為圖6的(b)的例,1~3點)夾持遮罩單元片材部220並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2遮罩單元片材部220。Then, the mask unit sheet portion 220 may correspond to the edge frame portion 210. In the corresponding process, the edge sheet portion 221 and the edge frame portion 210 may be made in a state where all sides of the mask unit sheet portion 220 are stretched to flatten the mask unit sheet portion 220 in F1 to F4 correspond. The mask unit sheet portion 220 may be sandwiched and stretched at a plurality of points (1 to 3 points in the example of (b) in FIG. 6) at one side. On the other hand, the unit sheet portion 220 may be covered by stretching F1 and F2 along a part of the side direction instead of all sides.

然後,當使遮罩單元片材部220與邊緣框架部210對應時,可以將遮罩單元片材部220的邊緣片材部221以焊接W方式附著。優選地,焊接W所有側部,以便遮罩單元片材部220牢固地附著於邊緣框架部210。應當最大限度地接近框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和遮罩單元片材部220之間的翹起空間,並提升黏著性。焊接W部分可以以線(line)或者點(spot)形狀生成,具有與遮罩單元片材部220相同的材料,並可以成為將邊緣框架部210和遮罩單元片材部220連接成一體的媒介。Then, when the mask unit sheet portion 220 corresponds to the edge frame portion 210, the edge sheet portion 221 of the mask unit sheet portion 220 may be attached by welding W. Preferably, all sides are welded so that the mask unit sheet portion 220 is firmly attached to the edge frame portion 210. Welding W should be performed as close as possible to the corner side of the frame portion 210 in order to minimize the warping space between the edge frame portion 210 and the mask unit sheet portion 220 and improve the adhesion. The welded W part may be formed in a line or spot shape, have the same material as the mask unit sheet portion 220, and may become an integral unit that connects the edge frame portion 210 and the mask unit sheet portion 220 medium.

圖7是示出本發明的另一實施例涉及的框架的製造過程的概略圖。圖6的實施例首先製造具備遮罩單元區域CR的遮罩單元片材部220後再附著於邊緣框架部210,而圖7的實施例將平面狀的片材附著於邊緣框架部210後再形成遮罩單元區域CR部分。7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention. The embodiment of FIG. 6 first manufactures the mask unit sheet portion 220 having the mask unit area CR and then attaches it to the edge frame portion 210, while the embodiment of FIG. 7 attaches the planar sheet to the edge frame portion 210 and then The mask unit area CR portion is formed.

首先,與圖6的(a)相同,提供包括中空區域R的邊緣框架部210。First, as in (a) of FIG. 6, the edge frame portion 210 including the hollow region R is provided.

然後,參照圖7的(a),可以使平面狀的片材(平面狀的遮罩單元片材部220’)與邊緣框架部210對應。遮罩單元片材部220’是還未形成遮罩單元區域CR的平面狀態。在對應的過程中,可以在拉伸F1~F4遮罩單元片材部220’的所有側部以使遮罩單元片材部220’平坦伸展狀態下,使其與邊緣框架部210對應。在一側部也能以多個點(作為圖7的(a)的例,1~3點)夾持單元片材部220’並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2遮罩單元片材部220’。Then, referring to (a) of FIG. 7, a planar sheet (planar mask unit sheet portion 220 ′) may correspond to the edge frame portion 210. The mask unit sheet portion 220' is a planar state where the mask unit region CR has not yet been formed. In the corresponding process, all the side portions of the mask unit sheet portion 220' of F1 to F4 may be stretched to correspond to the edge frame section 210 in a state where the mask unit sheet portion 220' is flatly extended. On one side, the unit sheet portion 220' can be sandwiched and stretched at a plurality of points (1 to 3 points as an example in (a) of FIG. 7 ). On the other hand, the unit sheet portion 220' may be stretched by extending F1 and F2 along a part of the side direction instead of all sides.

然後,使遮罩單元片材部220’與邊緣框架部210對應時,可以將遮罩單元片材部220’的邊緣部分以焊接W方式進行附著。優選地,焊接W所有側部,以便遮罩單元片材部220’牢固地附著於邊緣框架部220。應當最大限度地接近邊緣框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和遮罩單元片材部220’之間的翹起空間,並提升黏著性。焊接W部分可以以線(line)或者點(spot)形狀生成,與遮罩單元片材部220’具有相同材料,並可以成為將邊緣框架部210和遮罩單元片材部220’連接成一體的媒介。Then, when the mask unit sheet portion 220' corresponds to the edge frame portion 210, the edge portion of the mask unit sheet portion 220' can be attached by welding W. Preferably, all sides are welded so that the mask unit sheet portion 220' is firmly attached to the edge frame portion 220. Welding W should be performed as close as possible to the corner side of the edge frame portion 210 to minimize the warping space between the edge frame portion 210 and the mask unit sheet portion 220', and to improve adhesion. The welded W part may be formed in a line or spot shape, and has the same material as the mask unit sheet portion 220', and may be formed by connecting the edge frame portion 210 and the mask unit sheet portion 220' together Medium.

然後,參照圖7的(b),在平面狀的片材(平面狀的遮罩單元片材部220’)上形成遮罩單元區域CR。通過雷射劃線、蝕刻等去除遮罩單元區域CR部分的片材,從而可以形成遮罩單元區域CR。本說明書中,以形成6×5的遮罩單元區域CR(CR11~CR56)為例進行說明。當形成遮罩單元區域CR時,可以構成遮罩單元片材部220,其中,與邊緣框架部210焊接W的部分成為邊緣片材部221,並且具備5個第一柵格片材部223與4個第二柵格片材部225。Then, referring to (b) of FIG. 7, a mask unit region CR is formed on a planar sheet (planar mask unit sheet portion 220'). The sheet of the mask unit region CR is removed by laser scribing, etching, etc., so that the mask unit region CR can be formed. In this specification, a 6×5 mask cell region CR (CR11 to CR56) will be described as an example. When the mask unit region CR is formed, the mask unit sheet portion 220 may be constituted, wherein the portion welded W to the edge frame portion 210 becomes the edge sheet portion 221, and includes five first grid sheet portions 223 and Four second grid sheet sections 225.

圖8是示出現有的用於形成高解析度OLED的遮罩的概略圖。8 is a schematic diagram showing a conventional mask for forming a high-resolution OLED.

為實現高解析度的OLED,圖案的尺寸逐漸變小,藉此所使用的遮罩金屬膜的厚度也有必要變薄。如圖8的(a)所示,若要實現高解析度的OLED像素6,則在遮罩10’上縮小像素間距與像素尺寸(PD->PD’)。而且,為了防止因陰影效應導致的OLED像素6的沉積不均勻,有必要使遮罩10’的圖案傾斜地形成14。然而,具有約30~50μm的厚度T1,在較厚的遮罩10’上傾斜地形成圖案14的過程中,由於難以進行與細微像素間距PD’與像素尺寸匹配的圖案化13,因此將成為加工工藝中產率變差的原因。換而言之,為了具有細微的像素間距PD’的同時傾斜地形成圖案14,需要使用較薄厚度的遮罩10’。In order to realize a high-resolution OLED, the size of the pattern gradually becomes smaller, and thus the thickness of the mask metal film used needs to be thinner. As shown in (a) of FIG. 8, if high-resolution OLED pixels 6 are to be realized, the pixel pitch and pixel size (PD->PD') are reduced on the mask 10'. Moreover, in order to prevent uneven deposition of the OLED pixels 6 due to the shadow effect, it is necessary to form the pattern 14 of the mask 10' obliquely. However, with a thickness T1 of about 30 to 50 μm, in the process of obliquely forming the pattern 14 on the thicker mask 10 ′, it is difficult to perform patterning 13 that matches the fine pixel pitch PD′ and the pixel size, so it will be processed The reason for the poor yield in the process. In other words, in order to form the pattern 14 obliquely while having a fine pixel pitch PD', it is necessary to use a mask 10' with a thin thickness.

特別是,為了實現UHD級別的高解析度,如圖8的(b)所示,只有使用約為20μm以下的厚度T2的較薄的遮罩10’,才能夠進行細微的圖案化。而且,為了實現UHD以上的超高解析度,可以考慮使用具有10μm左右厚度T2的較薄的遮罩10’。In particular, in order to achieve high resolution at the UHD level, as shown in (b) of FIG. 8, only a thin mask 10' with a thickness T2 of about 20 μm or less can be patterned finely. Furthermore, in order to achieve ultra-high resolution of UHD or higher, it may be considered to use a thin mask 10' having a thickness T2 of about 10 m.

圖9是示出本發明的一實施例涉及的遮罩100的概略圖。9 is a schematic diagram showing a mask 100 according to an embodiment of the present invention.

遮罩100可包括形成有多個遮罩圖案P的遮罩單元C與遮罩單元C周邊的虛設部DM。如上所述,可使用基於軋延工藝生成的金屬片材製造遮罩100,遮罩100上可形成有一個單元C。虛設部DM對應於除了單元C以外的遮罩膜110[遮罩金屬膜110]部分,可以只包括遮罩膜110或可包括形成有與遮罩圖案P相似形態的預定的虛設部圖案的遮罩膜110。虛設部DM與遮罩100的邊緣對應,因此虛設部DM的一部分或者全部可附著於框架200[遮罩單元片材部220]上。The mask 100 may include a mask unit C formed with a plurality of mask patterns P and a dummy portion DM around the mask unit C. As described above, the mask 100 may be manufactured using a metal sheet generated based on the rolling process, and one unit C may be formed on the mask 100. The dummy portion DM corresponds to a portion of the mask film 110 [mask metal film 110] other than the cell C, and may include only the mask film 110 or may include a mask formed with a predetermined dummy portion pattern similar in shape to the mask pattern P盖膜110。 The cover film 110. The dummy portion DM corresponds to the edge of the mask 100, so a part or all of the dummy portion DM can be attached to the frame 200 [mask unit sheet portion 220].

遮罩圖案P的寬度可以小於40μm,遮罩100的厚度可以約為5~20μm。由於框架200具備多個遮罩單元區域CR(CR11~CR56),因此也可以具有多個遮罩100,該遮罩100具有與各個遮罩單元區域CR(CR11~CR56)分別對應的遮罩單元C(C11~56)。The width of the mask pattern P may be less than 40 μm, and the thickness of the mask 100 may be about 5-20 μm. Since the frame 200 includes a plurality of mask unit regions CR (CR11 to CR56), it may also have a plurality of masks 100 having mask units corresponding to the respective mask unit regions CR (CR11 to CR56). C (C11~56).

由於遮罩100的一面101是與框架200接觸進行附著的面,因此優選為平坦形狀。該一面101可通過後面所述的平坦化工藝變為平坦的同時進行鏡面化。遮罩100的另一面102可以與後面所述的模板50的一面相對。Since the one surface 101 of the mask 100 is a surface that comes into contact with and adheres to the frame 200, it is preferably flat. The one side 101 can be mirror-finished while being flattened by a flattening process described later. The other side 102 of the mask 100 may be opposite to the side of the template 50 described later.

圖10至圖11是示出本發明的一實施例涉及的將遮罩金屬膜110黏合於模板50上並形成遮罩100以製造遮罩支撐模板的過程的概略圖。10 to 11 are schematic diagrams showing a process of bonding the mask metal film 110 to the template 50 and forming the mask 100 to manufacture a mask support template according to an embodiment of the present invention.

參照圖10的(a),可提供模板50(template)。模板50是以使遮罩100附著並支撐於模板50的一面的狀態移動之媒介。模板50的一面優選為平坦形狀,以支撐平坦的遮罩100並使其移動。中心部50a與遮罩金屬膜110的遮罩單元C對應,邊緣部50b可以與遮罩金屬膜110的虛設部DM對應。模板50可以是尺寸大於遮罩金屬膜110之大平板形狀,以使遮罩金屬膜110整體上得到支撐。Referring to (a) of FIG. 10, a template 50 (template) may be provided. The template 50 is a medium that moves with the mask 100 attached and supported on one side of the template 50. One side of the template 50 is preferably flat to support and move the flat mask 100. The center portion 50a corresponds to the mask unit C that masks the metal film 110, and the edge portion 50b may correspond to the dummy portion DM of the mask metal film 110. The template 50 may have a large flat plate size larger than the mask metal film 110 so that the mask metal film 110 is supported as a whole.

模板50優選由透明的材料構成,藉以使遮罩100與框架200對準且附著的過程以便於觀測視覺(vision)等。而且,若是透明的材料,則還可以使雷射貫穿。作為透明的材料,可以使用玻璃(glass)、氧化矽(silica)、耐熱玻璃、石英(quartz)、氧化鋁(Al2 O3 )、硼矽酸玻璃(borosilicate glass)等材料。作為一例,模板50可以使用硼矽酸玻璃中具有優秀的耐熱性、化學耐久性、機械强度、透明性等的BOROFLOAT® 33材料。而且,BOROFLOAT® 33的熱膨脹係數約為3.3,與恆範鋼遮罩金屬膜110的熱膨脹係數差異小,藉以具有便於控制遮罩金屬膜110的優點。The template 50 is preferably made of a transparent material, so that the process of aligning and attaching the mask 100 and the frame 200 is convenient for viewing vision and the like. Furthermore, if it is a transparent material, the laser can also penetrate. As a transparent material, materials such as glass, silica, heat-resistant glass, quartz, alumina (Al 2 O 3 ), and borosilicate glass can be used. As an example, for the template 50, BOROFLOAT ® 33 material having excellent heat resistance, chemical durability, mechanical strength, transparency, etc. in borosilicate glass can be used. Moreover, the thermal expansion coefficient of BOROFLOAT ® 33 is about 3.3, which is small in difference from the thermal expansion coefficient of the Hengfan steel mask metal film 110, thereby having the advantage of facilitating control of the mask metal film 110.

另外,模板50與遮罩金屬膜110接觸的一面可以是鏡面,以使與遮罩金屬膜110[或者遮罩100]之間的界面之間不產生空隙(air gap)。基於此,模板50的一面的表面粗糙度Ra可以為100nm以下。為了實現表面粗糙度Ra為100nm以下的模板50,模板50可以使用晶圓(wafer)。晶圓(wafer)的表面粗糙度Ra約為10nm,且市面上的產品較多,表面處理工藝已被習知,故可作為模板50使用。模板50的表面粗糙度Ra是nm級,因此不存在空隙AG或空隙AG幾乎不存在,容易基於雷射焊接生成焊接焊珠WB,故對遮罩圖案P的對準誤差不產生影響。In addition, the side of the template 50 that is in contact with the mask metal film 110 may be a mirror surface so that no air gap is generated between the interface with the mask metal film 110 [or the mask 100]. Based on this, the surface roughness Ra of one side of the template 50 may be 100 nm or less. In order to realize the template 50 having a surface roughness Ra of 100 nm or less, a wafer may be used for the template 50. The surface roughness Ra of the wafer is about 10 nm, and there are many products on the market. The surface treatment process is already known, so it can be used as the template 50. The surface roughness Ra of the template 50 is on the order of nm, so there is no gap AG or almost no gap AG, and it is easy to generate a welding bead WB based on laser welding, so there is no influence on the alignment error of the mask pattern P.

模板50上可形成有雷射貫穿孔51,以使從模板50的上部照射的雷射L至達遮罩100的焊接部(執行焊接的區域)。雷射貫穿孔51可與焊接部的位置及個數對應地形成於模板50上。焊接部可以規定的間隔在遮罩100的邊緣或虛擬部DM的部分上佈置多個,因此雷射貫穿孔51亦可以與其對應且相隔規定間隔地形成多個。作為一例,焊接部在遮罩100的兩側(左側/右側)虛擬部DM的部分以規定間隔佈置多個,因此雷射貫穿孔51亦可以在模板50的兩側(左側/右側)以規定間隔形成多個。The template 50 may be formed with a laser penetrating hole 51 so that the laser L irradiated from the upper portion of the template 50 reaches the welding portion (the area where welding is performed) of the mask 100. The laser penetrating holes 51 can be formed on the template 50 according to the positions and the number of welded portions. A plurality of welded portions may be arranged on the edge of the mask 100 or a portion of the dummy portion DM at a predetermined interval. Therefore, a plurality of laser through holes 51 may be formed at a predetermined interval corresponding thereto. As an example, the welded portions are arranged at predetermined intervals on the virtual portions DM on both sides (left/right) of the mask 100, so the laser through holes 51 may also be defined on both sides (left/right) of the template 50 Multiple intervals are formed.

雷射貫穿孔51並非一定與焊接部的位置及個數對應。例如,亦可以僅對雷射貫穿孔51中的一部分照射雷射L以進行焊接。另外,不與焊接部對應的雷射貫穿孔51中一部分在對準遮罩100與模板50時亦可代替對準標記而使用。若模板50的材料對雷射L光透明,則亦可以不形成雷射貫穿孔51。The laser through holes 51 do not necessarily correspond to the position and number of welded parts. For example, only a part of the laser through hole 51 may be irradiated with laser L to perform welding. In addition, some of the laser through holes 51 that do not correspond to the welded portion may be used instead of the alignment marks when the mask 100 and the template 50 are aligned. If the material of the template 50 is transparent to the laser L light, the laser through hole 51 may not be formed.

模板50的一面可形成有臨時黏合部55。臨時黏合部55用於使遮罩100附著於框架200上之前,將遮罩100[或者遮罩金屬膜110’]臨時黏合於模板50的一面以支撐於模板50上。A temporary bonding portion 55 may be formed on one surface of the template 50. The temporary bonding portion 55 is used to temporarily bond the mask 100 [or the mask metal film 110'] to one side of the template 50 to support the template 50 before attaching the mask 100 to the frame 200.

臨時黏合部55可使用基於加熱可分離的黏合劑或者黏合片材,基於UV照射可分離的黏合劑或者黏合片材。The temporary adhesive part 55 may use an adhesive or an adhesive sheet that can be separated by heating, and an adhesive or an adhesive sheet that can be separated by UV irradiation.

作為一例,臨時黏合部55可使用液態蠟(liquid wax)。液態蠟可以使用與在半導體晶圓拋光步驟等中使用的蠟相同的蠟,其種類沒有特別限制。液態蠟主要包含作為用於控制與維持力有關的黏著力、耐衝擊性等的樹脂成份的丙烯酸、醋酸乙烯酯、尼龍及各種聚合物等物質及溶劑。作為一例,臨時黏合部55作為樹脂成份可使用丙烯腈-丁二烯橡膠(ABR,Acrylonitrile butadiene rubber)且作為溶劑成份可使用含有n-丙醇的SKYLIQUID ABR-4016。液態蠟可使用旋轉塗布形成於臨時黏合部55上。As an example, liquid wax can be used for the temporary bonding portion 55. As the liquid wax, the same wax as that used in the semiconductor wafer polishing step and the like can be used, and the type is not particularly limited. The liquid wax mainly contains acrylic acid, vinyl acetate, nylon, various polymers, and other substances and solvents as resin components for controlling adhesion, impact resistance, etc. related to the holding force. As an example, the temporary bonding portion 55 may use acrylonitrile butadiene rubber (ABR) as the resin component and SKYLIQUID ABR-4016 containing n-propanol as the solvent component. The liquid wax can be formed on the temporary bonding portion 55 using spin coating.

作為液態蠟的臨時黏合部55在高於85℃~100℃的溫度下其黏性變低,而在低於85℃的溫度下黏性變大,一部分像固體一樣變硬,且可以使遮罩金屬膜110’與模板50固定並黏合。The temporary bonding portion 55 as a liquid wax has a lower viscosity at a temperature higher than 85°C to 100°C, and a higher viscosity at a temperature lower than 85°C, a part of it becomes hard like a solid, and can make the mask The cover metal film 110' is fixed and adhered to the template 50.

然後,參照圖10的(b),可以使遮罩金屬膜110’黏合於模板50上。將液態蠟加熱至85℃以上且使遮罩金屬膜110’接觸模板50之後,將遮罩金屬膜110’與模板50通過輥子之間并進行黏合。Then, referring to (b) of FIG. 10, the mask metal film 110' may be adhered to the template 50. After heating the liquid wax above 85°C and bringing the mask metal film 110' into contact with the template 50, the mask metal film 110' and the template 50 are passed between rollers and bonded.

根據一實施例,在約120℃的溫度下對模板50烘焙(baking)60秒,使臨時黏合部55的溶劑氣化,並直接進行遮罩金屬膜的層壓(lamination)工藝。層壓可藉由在一面形成有臨時黏合部55的模板50上裝載遮罩金屬膜110’,並將其通過約100℃的上部輥(roll)與約0℃的下部輥之間來執行。其結果,遮罩金屬膜110’可藉由在模板50上夾設臨時黏合部55而接觸。According to an embodiment, the template 50 is baked at a temperature of about 120° C. for 60 seconds to vaporize the solvent of the temporary bonding portion 55 and directly perform the lamination process of the mask metal film. Lamination can be performed by loading the mask metal film 110' on the template 50 with the temporary bonding portion 55 formed on one side and passing it between an upper roll of about 100°C and a lower roll of about 0°C. As a result, the mask metal film 110' can be brought into contact by interposing the temporary bonding portion 55 on the template 50.

作為又一例,臨時黏合部55可使用熱分離膠帶(thermal release tape)。熱分離膠帶是中間佈置有PET膜等的基膜,基膜的兩面佈置有可熱分離的黏著層(thermal release adhesive),而黏著層的外廓可佈置有分離膜/離型膜。其中,基膜的兩面上佈置的黏著層的分離溫度可相互不同。As yet another example, the temporary bonding portion 55 may use thermal release tape. The thermal separation tape is a base film with a PET film or the like arranged in the middle, a thermally separable adhesive layer (thermal release adhesive) is arranged on both sides of the base film, and a separation film/release film can be arranged on the outer surface of the adhesive layer. Among them, the separation temperatures of the adhesive layers arranged on both sides of the base film may be different from each other.

根據一實施例,在去除分離膜/離型膜的狀態下,熱分離膠帶的下表面[基膜的下部第二黏著層]黏合於模板50上,熱分離膠帶的上表面[基膜的上部第一黏著層]可黏合於遮罩金屬膜110’上。第一黏著層與第二黏著層的分離溫度互不相同,因此在後面所述的圖16中,從遮罩100分離模板50時,隨著對第一黏著層加熱,遮罩100可從模板50及臨時黏合部55分離出來。According to an embodiment, in a state where the separation film/release film is removed, the lower surface of the thermal separation tape [the lower second adhesive layer of the base film] is adhered to the template 50, and the upper surface of the thermal separation tape [the upper part of the base film The first adhesive layer] can be adhered to the mask metal film 110'. The separation temperature of the first adhesive layer and the second adhesive layer are different from each other. Therefore, in FIG. 16 described later, when the template 50 is separated from the mask 100, as the first adhesive layer is heated, the mask 100 can be removed from the template 50 and the temporary bonding part 55 are separated.

接著,進一步參照圖10的(b),可以使遮罩金屬膜110’的一面平坦化PS。此處,平坦化PS是指對遮罩金屬膜110’的一面(上面)進行鏡面化的同時去除遮罩金屬膜110’的上部的一部分以使厚度變薄。 如圖8的(b)所示,為了實現UHD級別的高解析度,只有使用約為20μm以下的厚度2的較薄的 遮罩金屬膜110,才能夠進行細微的圖案化,而為了實現UHD以上的超高解析度,可以考慮使用具有10μm左右厚度的較薄的遮罩金屬膜110。然而,經軋延(rolling)工藝生成的遮罩金屬膜110’具有25~500μm左右的厚度,故有必要將厚度變成更薄。此外,即使使用比軋延工藝的厚度更薄的經電鑄工藝生成的遮罩金屬膜110’,根據鍍覆的遮罩金屬膜110’的表面層的成份,結晶結構/細微結構的不同蝕刻特性會不同,因此有必要藉由平坦化PS來控制表面特性、厚度。Next, referring further to FIG. 10(b), one side of the mask metal film 110' can be flattened PS. Here, the flattening PS means mirroring one side (upper surface) of the mask metal film 110' and removing a part of the upper part of the mask metal film 110' to make the thickness thin. As shown in (b) of FIG. 8, in order to achieve high resolution at the UHD level, only a thin mask metal film 110 with a thickness of about 20 μm or less can be used for fine patterning, and in order to achieve UHD For the above ultra-high resolution, it may be considered to use a thin mask metal film 110 having a thickness of about 10 μm. However, the mask metal film 110' generated by the rolling process has a thickness of about 25 to 500 m, so it is necessary to make the thickness thinner. In addition, even if a mask metal film 110' produced by an electroforming process that is thinner than the thickness of the rolling process is used, the crystal structure/fine structure is etched differently according to the composition of the surface layer of the plated mask metal film 110' The characteristics will be different, so it is necessary to control the surface characteristics and thickness by flattening the PS.

具體而言,可以對與模板50上黏合的遮罩金屬膜110’的面102相對的反面101進行平坦化PS以縮減遮罩金屬膜110’的厚度。平坦化PS可藉由CMP(Chemical Mechanical Polishing)方法執行,只要是公知的CMP方法均可使用,沒有特別限制。而且,可藉由化學濕蝕刻(chemical wet etching)或者乾蝕刻(dry etching)方法來縮減遮罩金屬膜110’的厚度。Specifically, the back surface 101 opposite to the surface 102 of the mask metal film 110' bonded on the template 50 may be flattened PS to reduce the thickness of the mask metal film 110'. The flattening PS can be performed by a CMP (Chemical Mechanical Polishing) method, and any known CMP method can be used without particular limitation. Moreover, the thickness of the mask metal film 110' can be reduced by chemical wet etching or dry etching methods.

在執行平坦化PS的過程中,作為一列,在CMP過程中,可控制遮罩金屬膜110’的上表面的表面粗糙度Ra。優選地,可進行使表面粗糙度進一步減少的鏡面化。或者,作為其他例子,藉由化學濕蝕刻或者乾蝕刻過程進行平坦化PS之後,可追加進行個別的CMP工藝等的拋光工藝,藉以減少表面粗糙度Ra。In the process of performing the planarization PS, as a row, during the CMP process, the surface roughness Ra of the upper surface of the mask metal film 110' can be controlled. Preferably, the mirror surface can be further reduced in surface roughness. Or, as another example, after the PS is planarized by a chemical wet etching or dry etching process, a polishing process such as a separate CMP process may be additionally performed to reduce the surface roughness Ra.

除此以外,只要是能夠使遮罩金屬膜110’的厚度變薄的平坦化工藝,沒有特別限制均可以使用。藉此,如圖10的(c)所示,隨著遮罩金屬膜110’的厚度縮減(110’->110),遮罩金屬膜110的厚度變為約5μm至20μm。Other than that, as long as it is a flattening process capable of making the thickness of the mask metal film 110' thin, it can be used without particular limitation. Thereby, as shown in FIG. 10(c), as the thickness of the mask metal film 110' decreases (110'->110), the thickness of the mask metal film 110 becomes about 5 to 20 m.

然後,參照圖11的(d),可以在遮罩金屬膜110上形成圖案化的絕緣部25。絕緣部25可利用印刷法等由光阻材料形成。Then, referring to (d) of FIG. 11, a patterned insulating portion 25 may be formed on the mask metal film 110. The insulating portion 25 can be formed of a photoresist material using a printing method or the like.

接著,可進行遮罩金屬膜110的蝕刻。可使用乾蝕刻、濕蝕刻等方法,對其沒有特別限制,經蝕刻,在絕緣部25之間的空位置26上露出的遮罩金屬膜110部分會被蝕刻。遮罩金屬膜110的被蝕刻部分構成遮罩圖案P,藉以可製造形成有多個遮罩圖案P的遮罩100。Next, the mask metal film 110 may be etched. Methods such as dry etching and wet etching may be used, and there is no particular limitation on it. After etching, the portion of the mask metal film 110 exposed on the empty space 26 between the insulating portions 25 will be etched. The etched portion of the mask metal film 110 constitutes the mask pattern P, whereby the mask 100 formed with a plurality of mask patterns P can be manufactured.

然後,參照圖11的(e),藉由去除絕緣部25,可完成支撐遮罩100的模板50的製造。Then, referring to (e) of FIG. 11, by removing the insulating portion 25, the manufacture of the template 50 supporting the mask 100 can be completed.

圖12是示出本發明的另一實施例涉及的遮罩金屬膜110”的概略圖。FIG. 12 is a schematic diagram showing a mask metal film 110" according to another embodiment of the present invention.

為了製作圖9中所述的遮罩100,需要執行在遮罩金屬膜110”上形成遮罩圖案P的工藝。遮罩圖案P可藉由蝕刻(etching)等形成。惟,為了實現UHD以上的高解析度的OLED,遮罩圖案P的幅寬應小於40μm,因此進行蝕刻時還需要考慮遮罩金屬膜110”內的晶粒(grain)的形態、方向。由於蝕刻速度(etching rate)根據晶粒的方向性不同而不同,因此若對不均勻的晶粒進行蝕刻,則有可能不能生成所需幅寬的遮罩圖案P,即使是數μm的誤差也會左右成功實現解析度與否。In order to fabricate the mask 100 shown in FIG. 9, a process of forming the mask pattern P on the mask metal film 110" needs to be performed. The mask pattern P can be formed by etching or the like. However, in order to realize UHD or more For a high-resolution OLED, the width of the mask pattern P should be less than 40 μm. Therefore, the shape and direction of the grains in the mask metal film 110” need to be considered when etching. Since the etching rate differs according to the directionality of the crystal grains, if the uneven crystal grains are etched, the mask pattern P with a desired width may not be generated even with an error of several μm Will be successful in achieving resolution or not.

通常,就經軋延(rolling)生成的金屬膜(sheet)而言,表面,即上表面與下表面的晶粒的形態、方向等與金屬膜中央部的部分存差異。參照圖12,從遮罩金屬膜110”的上部表面111”相隔預定厚度的部分117”[上層部117”]與從下部表面112”相隔預定厚度的部分119”[下層部119”]與除上層部117”及下層部119”以外的相當於中央部115”的部分的晶粒特性存在差異。上層部117”與下層部119”藉由軋延使晶粒朝軋延方向長長地排列且具有不規則的形態。中央部115”上的晶粒大體沒有方向性且具有球形的形態。In general, for a metal film formed by rolling, the surface, that is, the morphology and direction of crystal grains on the upper surface and the lower surface are different from the central portion of the metal film. Referring to FIG. 12, a portion 117" [upper portion 117"] separated by a predetermined thickness from an upper surface 111" of the mask metal film 110" is separated from a portion 119" [lower portion 119"] separated by a predetermined thickness from a lower surface 112" There is a difference in the grain characteristics of the portion corresponding to the central portion 115" other than the upper layer portion 117" and the lower layer portion 119". The upper layer portion 117" and the lower layer portion 119" are elongated in the rolling direction by rolling, and have an irregular shape. The crystal grains on the central portion 115" are substantially non-directional and have a spherical shape.

因此,本發明的另一實施例的特徵在於,為了防止晶粒的形態不同引起的蝕刻誤差,使用除了遮罩金屬膜110”的上部117”與下部119”以外的中央部115”來製造遮罩100。對上部117”與下部119”執行平坦化PS1、PS2工藝或厚度縮減工藝,藉以可製造包含中央部115”的遮罩金屬膜110。由於僅對晶粒規則且均勻的中央部115”進行蝕刻並形成遮罩圖案P,因此具有能夠細微地控制遮罩圖案P的幅寬之優點。Therefore, another embodiment of the present invention is characterized in that, in order to prevent etching errors caused by different morphologies of the crystal grains, a mask 115 is used to manufacture the mask except for the upper portion 117" and the lower portion 119" of the mask metal film 110" Hood 100. A flattening PS1, PS2 process or thickness reduction process is performed on the upper part 117" and the lower part 119", whereby the mask metal film 110 including the central part 115" can be manufactured. Since only the regular and uniform central part 115" of the crystal grain is etched Since the mask pattern P is formed, there is an advantage that the width of the mask pattern P can be finely controlled.

圖13是本發明的另一實施例涉及的遮罩金屬膜110的製造過程的概略圖。FIG. 13 is a schematic diagram of the manufacturing process of the mask metal film 110 according to another embodiment of the present invention.

參照圖13的(a),可使用黏合部41將經軋延工藝製造的遮罩金屬膜110”的下表面112”[第二面]黏合至支撐基板40。黏合部41具有與臨時黏合部55相同的材料或者具有預定的黏合力,只要是後續可分離的材料均可以使用。Referring to FIG. 13( a ), the lower surface 112 ″[second surface] of the mask metal film 110 ″ manufactured by the rolling process can be adhered to the support substrate 40 using the adhesive portion 41. The bonding part 41 has the same material as the temporary bonding part 55 or has a predetermined bonding force, and any material that can be subsequently separated can be used.

將遮罩金屬膜110”黏合於支撐基板40上之後,可以對上部表面111”[第一面]進行平坦化PS1。此時,平坦化PS1、PS2是指對遮罩金屬膜110’的一面進行鏡面化的同時去除遮罩金屬膜110’的一部分以使厚度變薄。平坦化PS1、PS2可藉由化學濕蝕刻(chemical wet etching)或者乾蝕刻(dry etching)等方法來進行。After the mask metal film 110" is adhered to the support substrate 40, the upper surface 111" [first surface] can be planarized PS1. In this case, flattening PS1 and PS2 means that one side of the mask metal film 110' is mirror-finished and a part of the mask metal film 110' is removed to reduce the thickness. The flattening of PS1 and PS2 can be performed by methods such as chemical wet etching or dry etching.

以遮罩金屬膜110”的厚度為基準,上表面為0%,下表面為100%時,中央部115”可使用10%至90%厚度部分中的至少一部分。若平坦化PS1、PS2幾乎在相同的厚度範圍進行,則從上表面111”經平坦化PS1工藝的厚度縮減可以在全部遮罩金屬膜110”厚度的約5%至45%範圍內進行。然而,並非一定局限於此,若以遮罩金屬膜110”的厚度為基準,中央部115”使用10%至90%的厚度部分中的至少一部分,則各平坦化PS1、PS2工藝中厚度縮減程度可以變更。Based on the thickness of the mask metal film 110", when the upper surface is 0% and the lower surface is 100%, the central portion 115" can use at least a part of the thickness portion of 10% to 90%. If the planarization PS1 and PS2 are performed in almost the same thickness range, the thickness reduction from the upper surface 111" through the planarization PS1 process can be performed in the range of about 5% to 45% of the thickness of the entire mask metal film 110". However, it is not necessarily limited to this. If the thickness of the mask metal film 110" is used as a reference, at least a part of the thickness portion of 10% to 90% is used for the central portion 115", the thickness reduction in each of the flattening PS1 and PS2 processes The degree can be changed.

執行平坦化PS1工藝之後,可從遮罩金屬膜110”去除上層部117”。After performing the planarization PS1 process, the upper layer portion 117" may be removed from the mask metal film 110".

然後,參照圖13的(b),準備其他支撐基板45,且可使用 黏合部46將遮罩金屬膜110’的上表面111”[第一面]黏合至支撐基板45。支撐基板45及黏合部46可以與支撐基板40及黏合部41相同。Then, referring to FIG. 13( b ), another supporting substrate 45 is prepared, and the upper surface 111 ″ [first surface] of the mask metal film 110 ′ can be bonded to the supporting substrate 45 using the adhesive portion 46. The supporting substrate 45 and bonding The portion 46 may be the same as the support substrate 40 and the bonding portion 41.

然後,參照圖13的(c),可以將遮罩金屬膜110’黏合於支撐基板40之後,分離支撐基板40。接著,可對第二面112”進行平坦化PS2。執行平坦化PS2工藝之後,從遮罩金屬膜110”去除下層部119”。Then, referring to (c) of FIG. 13, after the mask metal film 110' is adhered to the support substrate 40, the support substrate 40 may be separated. Next, the second surface 112" may be planarized PS2. After the planarized PS2 process is performed, the lower layer portion 119" is removed from the mask metal film 110".

在圖13的(b)及(c)中,支撐基板45可以與上述模板50,黏合部45可以與上述臨時黏合部55對應。這種情況下,如圖10的步驟(b)那樣,圖13的步驟(b)可以由將遮罩金屬膜110”黏合至形成有臨時黏合部55的模板50上的步驟代替,圖13的步驟(c)之平坦化PS2可以由圖10的步驟(b)的平坦化PS代替。In (b) and (c) of FIG. 13, the support substrate 45 may correspond to the template 50 described above, and the bonding portion 45 may correspond to the temporary bonding portion 55 described above. In this case, as in step (b) of FIG. 10, step (b) of FIG. 13 can be replaced by the step of bonding the mask metal film 110" to the template 50 on which the temporary bonding portion 55 is formed. The flattened PS2 of step (c) can be replaced by the flattened PS of step (b) of FIG. 10.

然後,參照圖13的(d),平坦化PS2結束的話,即可以完成遮罩金屬膜110的製造。遮罩金屬膜110包括中央部115”,且遮罩金屬膜110的厚度為約5μm至20μm。Then, referring to FIG. 13( d ), when the planarization PS2 is completed, the manufacture of the mask metal film 110 can be completed. The mask metal film 110 includes a central portion 115", and the thickness of the mask metal film 110 is about 5 μm to 20 μm.

另外,圖12及圖13中雖假設遮罩金屬膜110經軋延工藝製造而成,但即使是經電鑄等其他工藝製造的遮罩金屬膜,其表面部分與中央部分的晶粒的特性存在差異,因此可以適用如圖13所示的平坦化PS1、PS2工藝。In addition, although it is assumed in FIG. 12 and FIG. 13 that the mask metal film 110 is manufactured by a rolling process, even if it is a mask metal film manufactured by other processes such as electroforming, the characteristics of the crystal grains on the surface portion and the center portion There are differences, so the flattening PS1 and PS2 processes shown in FIG. 13 can be applied.

圖14是示出本發明的一實施例涉及的將遮罩支撐模板裝載於框架上的過程的概略圖。14 is a schematic diagram showing a process of loading a mask support template on a frame according to an embodiment of the present invention.

參照圖14,模板50可藉由真空吸盤90移送。用真空吸盤90吸附黏合有遮罩100的模板50的面的相反面並進行移送。真空吸盤90可以與向x、y、z、θ軸移動的移動手段(未圖示)連接。而且,真空吸盤90可吸附模板50並與能夠進行翻轉(flip)的翻轉手段(未圖示)連接。如圖14的(b)所示,真空吸盤90即使在吸附模板50並使其翻轉之後向框架200移送的過程中,也不會影響遮罩100的黏合狀態與對準狀態。Referring to FIG. 14, the template 50 can be transferred by the vacuum chuck 90. The surface opposite to the surface of the template 50 to which the mask 100 is bonded is sucked by the vacuum chuck 90 and transferred. The vacuum chuck 90 may be connected to moving means (not shown) that moves to the x, y, z, and θ axes. In addition, the vacuum chuck 90 can attract the template 50 and be connected to flip means (not shown) capable of flipping. As shown in FIG. 14( b ), the vacuum chuck 90 does not affect the adhesion state and the alignment state of the mask 100 even when the template 50 is sucked and turned over and transferred to the frame 200.

圖15是示出本發明一實施例涉及的將模板裝載於框架上以使遮罩與框架的單元區域對應的狀態的概略圖。圖15雖示出將一個遮罩100與單元區域CR對應/附著的例子,但也可以進行將多個遮罩100同時與所有單元區域CR分別對應以使遮罩100附著於框架200上的過程。此時,可具有用於分別支撐多個遮罩100的多個模板50。15 is a schematic diagram showing a state in which a template is mounted on a frame so that a mask corresponds to a unit area of the frame according to an embodiment of the present invention. FIG. 15 shows an example in which one mask 100 is associated with/attached to the unit region CR, but it is also possible to perform a process of attaching a plurality of masks 100 to all unit regions CR at the same time to attach the mask 100 to the frame 200 . At this time, there may be a plurality of templates 50 for supporting the plurality of masks 100, respectively.

然後,參照圖15,可以使遮罩100與框架200的一個遮罩單元區域CR對應。可藉由將模板50裝載於框架200[或者遮罩單元片材部220]上,實現遮罩100與遮罩單元區域CR的對應。控制模板50/真空吸盤90的位置的同時通過顯微鏡觀察遮罩100是否與遮罩單元區域CR對應。由於模板50擠壓遮罩100,因此遮罩100與框架200可緊密地抵接。Then, referring to FIG. 15, the mask 100 may correspond to one mask cell region CR of the frame 200. Correspondence between the mask 100 and the mask unit area CR can be achieved by loading the template 50 on the frame 200 [or the mask unit sheet portion 220]. While controlling the position of the template 50/vacuum chuck 90, observe with a microscope whether the mask 100 corresponds to the mask unit area CR. Since the template 50 presses the mask 100, the mask 100 and the frame 200 can tightly abut.

另一方面,亦可以在框架200下部佈置下部支撐體70。下部支撐體70具有可進入框架邊緣部210的中空區域R內部的尺寸且具有平坦的形狀。而且,下部支撐體70的上面亦可形成有與遮罩單元片材部220的形狀對應的規定支撐槽(未圖示)。此時,邊緣片材部221、第一柵格片材部223及第二柵格片材部225插入支撐槽內,藉以使遮罩單元片材部220更好地固定。On the other hand, the lower support 70 may also be arranged below the frame 200. The lower support 70 has a size that can enter the inside of the hollow region R of the frame edge portion 210 and has a flat shape. Furthermore, a predetermined support groove (not shown) corresponding to the shape of the mask unit sheet portion 220 may be formed on the upper surface of the lower support 70. At this time, the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 are inserted into the support grooves, so that the mask unit sheet portion 220 is better fixed.

下部支撐體70可擠壓與遮罩100接觸的遮罩單元區域CR的相反面。即,下部支撐體70沿上部方向支撐遮罩單元片材部220,藉以防止遮罩100的附著過程中遮罩單元片材部220向下部下垂。與此同時,下部支撐體70與模板50以相互相反的方向擠壓遮罩100的邊緣部分及框架200[或者遮罩單元片材部220],故不會破壞遮罩100的對準狀態並使其保持對準。The lower support 70 may press the opposite surface of the mask unit region CR that is in contact with the mask 100. That is, the lower support body 70 supports the mask unit sheet portion 220 in the upper direction, thereby preventing the mask unit sheet portion 220 from sagging downward when the mask 100 is attached. At the same time, the lower support 70 and the template 50 press the edge portion of the mask 100 and the frame 200 [or the mask unit sheet portion 220] in opposite directions, so that the alignment state of the mask 100 is not destroyed and Keep it aligned.

如此,僅藉由模板50上附著遮罩100且將模板50裝載於框架200上就可以完成使遮罩100與框架200的遮罩單元區域CR對應的過程,此過程對遮罩100不施加任何拉伸力。In this way, only by attaching the mask 100 to the template 50 and loading the template 50 on the frame 200, the process of matching the mask 100 to the mask unit region CR of the frame 200 can be completed. This process does not apply anything to the mask 100. Stretching force.

接著,向遮罩100照射雷射L,以使遮罩100藉由雷射焊接附著於框架200。被雷射焊接的遮罩的焊接部部分生成焊接焊珠WB,焊接焊珠WB可具有與遮罩100/框架200相同的材料且與遮罩100/框架200連接成一體。此時,被照射雷射L的遮罩100的焊接部[或者虛設部DM的一部分]形成得比遮罩單元C厚,因此充分量的焊接部被熔融並形成焊接焊珠WB,故能夠使焊接穩定地進行。Next, the mask 100 is irradiated with laser light L, so that the mask 100 is attached to the frame 200 by laser welding. The welding part of the mask to be laser welded generates a welding bead WB. The welding bead WB may have the same material as the mask 100/frame 200 and be integrally connected with the mask 100/frame 200. At this time, since the welding part [or part of the dummy part DM] of the mask 100 irradiated with the laser L is formed thicker than the mask unit C, a sufficient amount of welding part is melted to form a welding bead WB, so that it is possible to make Welding is carried out stably.

圖16是示出本發明的一實施例涉及的將遮罩100附著於框架200上之後分離遮罩100與模板50的過程的概略圖。16 is a schematic diagram illustrating a process of separating the mask 100 and the template 50 after attaching the mask 100 to the frame 200 according to an embodiment of the present invention.

參照圖16,在使遮罩100附著於框架200之後,可分離(debonding)遮罩100與模板50。遮罩100與模板50之間的分離可藉由對臨時黏合部55進行加熱ET、化學處理CM、施加超聲波US、施加UV中的至少一個來實現。由於遮罩100保持與框架200附著的狀態,因此可以只抬起模板50。作為一例,若施加比85℃~100℃高的熱ET,則臨時黏合部55的黏性下降,且遮罩100與模板50的黏著力邊弱,故可以分離遮罩100與模板50。作為其他例子,將臨時黏合部55浸漬CM於IPA、丙酮、乙醇等化學物質中,藉以由溶解、去除臨時黏合部55等方式分離遮罩100與模板50。作為又一例,若施加超聲波US或施加UV,則遮罩100與模板50間的黏著力變弱,故可使遮罩100與模板50分離。Referring to FIG. 16, after attaching the mask 100 to the frame 200, the mask 100 and the template 50 may be debonded. The separation between the mask 100 and the template 50 can be achieved by at least one of heating the ET, the chemical treatment CM, applying ultrasonic waves US, and applying UV to the temporary bonding portion 55. Since the mask 100 remains attached to the frame 200, only the template 50 can be lifted. As an example, if a thermal ET higher than 85° C. to 100° C. is applied, the viscosity of the temporary bonding portion 55 decreases, and the adhesion force between the mask 100 and the template 50 is weak, so the mask 100 and the template 50 can be separated. As another example, the temporary bonding part 55 is immersed in a chemical substance such as IPA, acetone, ethanol, etc., and the mask 100 and the template 50 are separated by dissolving and removing the temporary bonding part 55 and the like. As yet another example, if ultrasonic waves US or UV are applied, the adhesion between the mask 100 and the template 50 becomes weak, so the mask 100 and the template 50 can be separated.

圖17是示出本發明的一實施例涉及的將遮罩100附著於框架200上的狀態的概略圖。FIG. 17 is a schematic diagram showing a state where the mask 100 is attached to the frame 200 according to an embodiment of the present invention.

參照圖17,一個遮罩100可附著於框架200的一個單元區域CR上。Referring to FIG. 17, one mask 100 may be attached to one unit area CR of the frame 200.

由於框架200的遮罩單元片材部220具有薄的厚度,在對遮罩100施加拉伸力的狀態下,附著於遮罩單元片材部220時,遮罩100中殘存的拉伸力作用於遮罩單元片材部220及遮罩單元區域CR,也有可能使它們變形。因此,應該在對遮罩100不施加拉伸力的狀態下,將遮罩100附著於遮罩單元片材部220上。本發明僅藉由模板50上附著遮罩100且將模板50裝載於框架200上就可以完成使遮罩100與框架200的遮罩單元區域CR對應的過程,此過程對遮罩100不施加任何拉伸力。由此,可以防止因施加至遮罩100的拉伸力作為張力(tension)反向作用於框架200而導致框架200(或者遮罩單元片材部220)變形。Since the mask unit sheet portion 220 of the frame 200 has a thin thickness, when a tensile force is applied to the mask 100, when the mask unit sheet portion 220 is attached to the mask unit 220, the remaining tensile force in the mask 100 acts The mask unit sheet portion 220 and the mask unit region CR may be deformed. Therefore, the mask 100 should be attached to the mask unit sheet portion 220 in a state where no stretching force is applied to the mask 100. The present invention can complete the process of matching the mask 100 to the mask unit area CR of the frame 200 by attaching the mask 100 to the template 50 and loading the template 50 on the frame 200. This process does not apply anything to the mask 100. Stretching force. Thus, it is possible to prevent the frame 200 (or the mask unit sheet portion 220) from being deformed due to the tensile force applied to the mask 100 acting as a tension on the frame 200 in reverse.

現有的圖1的遮罩10包括6個單元C1~C6,因此具有較長的長度,而本發明的遮罩100包括一個單元C,因此具有較短的長度,因此PPA(pixel position accuracy)扭曲的程度會變小。假設包括多個單元C1~C6、…的遮罩10的長度為1m,並且在1m的總長度中發生10μm的PPA誤差,則本發明的遮罩100可以隨著相對長度減小(相當於單元C數量減少)而使上述誤差範圍1/n。例如,本發明的遮罩100長度為100mm,則具有從現有的遮罩10的1m減小為1/10的長度,因此在100mm的總長度中發生1μm的PPA誤差,對準誤差顯著減少。The existing mask 10 of FIG. 1 includes six cells C1 to C6, and thus has a long length, and the mask 100 of the present invention includes one cell C, and thus has a short length, so PPA (pixel position accuracy) is distorted The degree will become smaller. Assuming that the length of the mask 10 including a plurality of cells C1 to C6, is 1 m, and a PPA error of 10 μm occurs in the total length of 1 m, the mask 100 of the present invention can be reduced with the relative length (equivalent to a cell The number of C decreases) and the above error range is 1/n. For example, the mask 100 of the present invention has a length of 100 mm, and has a length reduced from 1 m of the existing mask 10 to 1/10. Therefore, a PPA error of 1 μm occurs in the total length of 100 mm, and the alignment error is significantly reduced.

另一方面,遮罩100具備多個單元C,若即使各個單元C與框架200的各個單元區域CR對應,對準誤差仍處於最小化範圍內,則遮罩100也可以與框架200的多個遮罩單元區域CR對應。或者,具有多個單元C的遮罩100也可以與一個遮罩單元區域CR對應。在這種情況下,考慮到基於對準的工藝時間和生產性,遮罩100優選具備盡可能少量的單元C。On the other hand, the mask 100 includes a plurality of cells C, and even if each cell C corresponds to each cell region CR of the frame 200, the alignment error is still within a minimum range, the mask 100 may also be The mask unit area CR corresponds. Alternatively, the mask 100 having a plurality of cells C may correspond to one mask cell region CR. In this case, considering the process time and productivity based on the alignment, the mask 100 is preferably provided with as few cells C as possible.

就本發明而言,由於只需匹配遮罩100的一個單元C並確認對準狀態即可,因此與同時匹配多個單元C(C1~C6)並需要確認全部對準狀態的現有方法相比,可以顯著縮短製造時間。As far as the present invention is concerned, it is only necessary to match one unit C of the mask 100 and confirm the alignment state, so compared with the existing method that matches multiple units C (C1 to C6) at the same time and needs to confirm all alignment states , Can significantly reduce manufacturing time.

即,本發明的框架一體型遮罩的製造方法藉由將6個包含於遮罩100的各個單元C11~C16分別與一個單元區域CR11~CR16對應並確認各個對準狀態之6次過程,與同時匹配6個單元C1~C6並需要同時確認6個單元C1~C6的對準狀態之現有方法相比,能夠明顯縮短時間。That is, the manufacturing method of the frame-integrated mask of the present invention consists of six processes of associating six cells C11 to C16 included in the mask 100 with one cell region CR11 to CR16 and confirming each alignment state, and Compared with existing methods that simultaneously match 6 cells C1~C6 and need to confirm the alignment state of 6 cells C1~C6 at the same time, the time can be significantly shortened.

另外,在本發明的框架一體型遮罩的製造方法中,使30個遮罩100分別與30個單元區域CR(CR11~CR56)對應並對準的30次的過程中的產品產率,可以明顯高於使分別包括6個單元C1~C6的5個遮罩10(參照圖2的(a))與框架20對應並對準的5次過程中的現有產品的產率。在使6個單元C一次對應的區域上對6個單元C1~C6進行對準之現有方法是明顯繁瑣、困難的作業,且產品產率低。In addition, in the manufacturing method of the frame-integrated mask of the present invention, the product yield in the process of aligning 30 masks 100 with 30 unit regions CR (CR11 to CR56) respectively and 30 times can be It is significantly higher than the yield of the existing product in the process of five times in which five masks 10 (refer to (a) of FIG. 2) including six cells C1 to C6 are respectively aligned and aligned with the frame 20. The existing method of aligning the six cells C1 to C6 on the area corresponding to the six cells C at a time is obviously cumbersome and difficult, and the product yield is low.

另外,在圖10的(b)步驟中,如上所述,藉由層壓工藝將遮罩金屬膜110黏合於模板50上時,遮罩金屬膜110上會施加有約100℃的溫度。基於此,遮罩金屬膜110在施加有部分拉伸力的狀態下黏合於模板50上。之後,遮罩100附著框架200上,若遮罩100與模板50分離,則遮罩100將會收縮預定程度。In addition, in the step (b) of FIG. 10, as described above, when the mask metal film 110 is bonded to the template 50 by a lamination process, a temperature of about 100° C. is applied to the mask metal film 110. Based on this, the mask metal film 110 is adhered to the template 50 with a partial tensile force applied. After that, the mask 100 is attached to the frame 200. If the mask 100 is separated from the template 50, the mask 100 will shrink by a predetermined degree.

當個遮罩100分別附著於與其對應的遮罩單元區域CR之後,使模板50與遮罩100分離時,由於多個遮罩100沿著相反方向施加收縮的張力,故該力量被抵銷,因此使遮罩單元片材部220不發生變形。例如,在附著於CR11單元區域的遮罩100與附著於CR12單元區域的遮罩100之間的第一柵格片材部223上,向附著於CR11單元區域的遮罩100的右側方向作用的張力與向附著於CR12單元區域的遮罩100的左側方向作用的張力可相互抵消。由此,最大限度地降低基於張力的框架200[或者遮罩單元片材部220]變形,藉以能夠最大限度地降低遮罩100[或者遮罩圖案P]的對準誤差。When each mask 100 is attached to the corresponding mask unit region CR, and the template 50 is separated from the mask 100, the plurality of masks 100 apply a contractive tension in the opposite direction, so the force is offset, Therefore, the mask unit sheet portion 220 is not deformed. For example, on the first grid sheet portion 223 between the mask 100 attached to the CR11 cell area and the mask 100 attached to the CR12 cell area, the first grid sheet portion 223 acts on the right side of the mask 100 attached to the CR11 cell area The tension and the tension acting in the left direction of the mask 100 attached to the CR12 unit area can cancel each other. As a result, the deformation of the frame 200 [or the mask unit sheet portion 220] based on the tension is minimized, so that the alignment error of the mask 100 [or the mask pattern P] can be minimized.

圖18是示出本發明之一實施例涉及之利用框架一體型遮罩100、200的OLED像素沉積裝置1000的概略圖。18 is a schematic diagram showing an OLED pixel deposition apparatus 1000 using frame-integrated masks 100 and 200 according to an embodiment of the present invention.

參照圖18,OLED像素沉積裝置1000包括:磁板300,其中容納有磁體310,並且排布有冷却水管350;沉積源供給部500,其從磁板300的下部供給有機物源600。Referring to FIG. 18, the OLED pixel deposition apparatus 1000 includes: a magnetic plate 300 in which a magnet 310 is accommodated and cooling water pipes 350 are arranged; and a deposition source supply part 500 that supplies an organic matter source 600 from the lower part of the magnetic plate 300.

磁板300與沉積源供給部500之間可以插入有用於沉積有機物源600的玻璃等目標基板900。目標基板900上可以以緊貼或非常接近的方式配置有使有機物源600按不同像素沉積的框架一體型遮罩100、200[或者FMM]。磁體310可以產生磁場,並藉由磁場緊貼至目標基板900上。A target substrate 900 such as glass for depositing the organic matter source 600 may be interposed between the magnetic plate 300 and the deposition source supply part 500. The target substrate 900 may be provided with frame-integrated masks 100, 200 [or FMM] for depositing the organic matter source 600 in different pixels in a close or very close manner. The magnet 310 can generate a magnetic field and adhere to the target substrate 900 by the magnetic field.

沉積源供給部500可以往返左右路徑並供給有機物源600,由沉積源供給部500供給的有機物源600可以通過形成於框架一體型遮罩100、200的圖案P沉積於目標基板900的一側。通過框架一體型遮罩100、200的圖案P後之被沉積的有機物源600,可以用作OLED的像素700。The deposition source supplying unit 500 can feed the organic matter source 600 to and from the left and right paths, and the organic source 600 supplied by the deposition source supplying unit 500 can be deposited on one side of the target substrate 900 by the pattern P formed in the frame-integrated masks 100 and 200. The organic matter source 600 deposited after the pattern P of the frame-integrated masks 100 and 200 can be used as the pixel 700 of the OLED.

為了防止由於陰影效應(Shadow Effect)發生的像素700的不均勻沉積,框架一體型遮罩100、200的圖案可以傾斜地形成S[或者以錐形S形成]。沿著傾斜表面,在對角綫方向上通過圖案的有機物源600,也可以有助於像素700的形成,因此,能夠整體上厚度均勻地沉積像素700。In order to prevent uneven deposition of the pixels 700 due to the shadow effect, the pattern of the frame-integrated masks 100, 200 may be formed obliquely [or formed in a tapered S]. Along the inclined surface, the organic matter source 600 passing through the pattern in the diagonal direction can also contribute to the formation of the pixel 700, and therefore, the pixel 700 can be deposited with a uniform thickness as a whole.

如上所述,本發明列舉了優選實施例進行圖示和說明,但是本發明不限於上述實施例,在不脫離本發明的精神的範圍內,該技術領域中具有通常知識者能夠進行各種變形和變更。這種變形及變更均落在本發明和所附的申請專利範圍的範圍內。As described above, the present invention lists preferred embodiments for illustration and description, but the present invention is not limited to the above-mentioned embodiments, and persons with ordinary knowledge in the technical field can make various modifications and changes within the scope not departing from the spirit of the present invention. change. Such modifications and changes fall within the scope of the present invention and the attached patent application.

10、10’:遮罩 11:遮罩膜 13:圖案化 14:形成圖案 20:框架 25:絕緣部 26:空位置 40、45:支撐基板 41、46:黏合部 50:模板(template) 50a、50b:模板的中心部、邊緣部 51:雷射貫穿孔 55:臨時黏合部 70:下部支撐體 90:真空吸盤 100:遮罩 101、102:遮罩的一面、另一面 110、110’、110”:遮罩膜、遮罩金屬膜 111”:遮罩金屬膜的第一面 112”:遮罩金屬膜的第二面 115”:遮罩金屬膜的中央部 117”:遮罩金屬膜的上層部 119”:遮罩金屬膜的下層部 200:框架 210:邊緣框架部 220、220’:遮罩單元片材部 221:邊緣片材部 223:第一柵格片材部 225:第二柵格片材部 300:磁板 310:磁體 350:冷却水管 500:沉積源供給部 600:有機物源 700:像素 900:目標基板 1000:OLED像素沉積裝置 C:單元、遮罩單元 C1~C6、CR11~CR16:單元 CM:化學處理 CR、CR11~CR56:遮罩單元區域 D1~D1”、D2~D2”:距離 DM:虛設部、遮罩虛設部 ET:施加熱 F1~F2:拉伸力 L:雷射 P:遮罩圖案 PD’:像素間距 PS、PS1、PS2:平坦化工藝 R:邊緣框架部的中空區域 T1、T2:厚度 US:施加超聲波 UV:施加UV W:焊接 WB:焊接焊珠10, 10’: mask 11: Mask film 13: Patterning 14: Form a pattern 20: Frame 25: Insulation 26: empty position 40, 45: support substrate 41, 46: Adhesive part 50: template 50a, 50b: the center and edge of the template 51: Laser penetrating hole 55: Temporary bonding section 70: lower support 90: Vacuum suction cup 100: mask 101, 102: one side and the other side of the mask 110, 110’, 110”: mask film, mask metal film 111”: mask the first side of the metal film 112”: mask the second side of the metal film 115”: mask the central part of the metal film 117”: Mask the upper layer of the metal film 119”: mask the lower part of the metal film 200: frame 210: edge frame part 220, 220’: sheet section of the mask unit 221: Edge sheet section 223: First grid sheet section 225: Second grid sheet section 300: magnetic board 310: magnet 350: cooling water pipe 500: deposition source supply department 600: Organic source 700: pixels 900: target substrate 1000: OLED pixel deposition device C: Unit, mask unit C1~C6, CR11~CR16: unit CM: Chemical treatment CR, CR11~CR56: mask unit area D1~D1”, D2~D2”: distance DM: Dummy Department, Mask Dummy Department ET: heat is applied F1~F2: tensile force L: Laser P: Mask pattern PD’: pixel pitch PS, PS1, PS2: flattening process R: Hollow area of the edge frame part T1, T2: thickness US: applying ultrasound UV: Apply UV W: welding WB: welding beads

圖1是示出現有的OLED像素沉積用遮罩的概略圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition.

圖2是示出現有的將遮罩附著至框架的過程的概略圖。FIG. 2 is a schematic diagram showing a conventional process of attaching a mask to a frame.

圖3是示出在現有的拉伸遮罩的過程中,發生單元之間的對準誤差的概略圖。FIG. 3 is a schematic diagram showing that an alignment error between cells occurs during a conventional stretching mask.

圖4是示出本發明的一實施例涉及的框架一體型遮罩的主視圖及側截面圖。4 is a front view and a side cross-sectional view showing a frame-integrated mask according to an embodiment of the present invention.

圖5是示出本發明的一實施例涉及的框架的主視圖及側截面圖。5 is a front view and a side sectional view showing a frame according to an embodiment of the present invention.

圖6是示出本發明的一實施例涉及的框架製造過程的概略圖。6 is a schematic diagram showing a frame manufacturing process according to an embodiment of the present invention.

圖7是示出本發明的另一實施例涉及的框架的製造過程的概略圖。7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention.

圖8是示出現有的用於形成高解析度OLED的遮罩的概略圖。8 is a schematic diagram showing a conventional mask for forming a high-resolution OLED.

圖9是示出本發明的一實施例涉及的遮罩的概略圖。9 is a schematic diagram showing a mask according to an embodiment of the present invention.

圖10至圖11是示出本發明的一實施例涉及的在模板上黏合遮罩金屬膜並形成遮罩,藉以製造遮罩支撐模板的過程的概略圖。10 to 11 are schematic diagrams showing a process of manufacturing a mask support template by bonding a mask metal film on a template and forming a mask according to an embodiment of the present invention.

圖12是示出本發明的另一實施例涉及的遮罩金屬膜的概略圖。12 is a schematic diagram showing a mask metal film according to another embodiment of the present invention.

圖13是示出本發明的另一實施例涉及的遮罩金屬膜的製造過程的概略圖。13 is a schematic diagram showing a manufacturing process of a mask metal film according to another embodiment of the present invention.

圖14是示出本發明的一實施例涉及的將遮罩支撐模板裝載於框架上的過程的概略圖。14 is a schematic diagram showing a process of loading a mask support template on a frame according to an embodiment of the present invention.

圖15是示出本發明的一實施例涉及的將模板裝載於框架上後使遮罩與框架的單元區域對應的狀態的概略圖。15 is a schematic diagram showing a state in which the mask corresponds to the unit area of the frame after the template is mounted on the frame according to an embodiment of the present invention.

圖16是示出本發明的一實施例涉及的將遮罩附著於框架上之後,使遮罩與模板分離的過程的概略圖。16 is a schematic diagram showing a process of separating the mask from the template after attaching the mask to the frame according to an embodiment of the present invention.

圖17是示出本發明的一實施例涉及的將遮罩附著於框架上的狀態的概略圖。17 is a schematic diagram showing a state where a mask is attached to a frame according to an embodiment of the present invention.

圖18是示出本發明的一實施例涉及的利用框架一體型遮罩的OLED像素沉積裝置的概略圖。18 is a schematic view showing an OLED pixel deposition apparatus using a frame-integrated mask according to an embodiment of the present invention.

50:模板(template) 50: template

50a、50b:模板的中心部、邊緣部 50a, 50b: the center and edge of the template

51:雷射貫穿孔 51: Laser penetrating hole

55:臨時黏合部 55: Temporary bonding section

110、110’:遮罩膜、遮罩金屬膜 110, 110’: mask film, mask metal film

PS:平坦化工藝 PS: Flattening process

Claims (17)

一種遮罩支撐模板的製造方法,該模板(template)用於支撐OLED像素形成用遮罩且使遮罩與框架對應,其中該方法包括: (a)準備遮罩金屬膜; (b)將遮罩金屬膜黏合至一面形成有臨時黏合部之模板上; 縮減模板上黏合的遮罩金屬膜的厚度;以及 (d)在遮罩金屬膜上形成遮罩圖案,以製造遮罩。A method for manufacturing a mask support template, the template is used to support a mask for forming an OLED pixel and make the mask correspond to a frame, wherein the method includes: (A) Prepare to mask the metal film; (B) The mask metal film is bonded to the template with a temporary bonding part formed on one side; Reduce the thickness of the mask metal film bonded on the template; and (D) A mask pattern is formed on the mask metal film to manufacture a mask. 一種遮罩支撐模板的製造方法,該模板(template)用於支撐OLED像素形成用遮罩且使遮罩與框架對應,其中該方法包括: (a)準備遮罩金屬膜; (b)從遮罩金屬膜的第一面及與第一面相對的第二面縮減至少一部分厚度; (c)將遮罩金屬膜黏合至一面形成有臨時黏合部之模板上;以及 (d)在遮罩金屬膜上形成遮罩圖案,以製造遮罩。A method for manufacturing a mask support template, the template is used to support a mask for forming an OLED pixel and make the mask correspond to a frame, wherein the method includes: (A) Prepare to mask the metal film; (B) Reduce the thickness of at least a part of the first surface of the mask metal film and the second surface opposite to the first surface; (C) The mask metal film is bonded to the template with a temporary bonding part formed on one side; and (D) A mask pattern is formed on the mask metal film to manufacture a mask. 如請求項1所述的遮罩支撐模板的製造方法,其中在(a)步驟,準備遮罩金屬膜,且從遮罩金屬膜的第一面縮減至少一部分厚度, 在(b)步驟,將遮罩金屬膜的第一面黏合到模板上, 在(c)步驟,從與遮罩金屬膜的第一面相對的第二面縮減至少一部分厚度。The method for manufacturing a mask support template according to claim 1, wherein in step (a), a mask metal film is prepared, and at least a part of the thickness is reduced from the first surface of the mask metal film, In step (b), the first side of the mask metal film is adhered to the template, In step (c), at least a part of the thickness is reduced from the second surface opposite to the first surface of the mask metal film. 如請求項1所述的遮罩支撐模板的製造方法,其中臨時黏合部是基於加熱可分離的黏合劑或者黏合片材,基於UV照射可分離的黏合劑或者黏合片材。The method for manufacturing a mask support template according to claim 1, wherein the temporary bonding part is based on heating a separable adhesive or adhesive sheet, and is based on UV irradiation to separate the adhesive or adhesive sheet. 如請求項1所述的遮罩支撐模板的製造方法,其中遮罩金屬膜之厚度縮減以CMP(Chemical Mechanical Polishing)、化學濕蝕刻(chemical wet etching)、乾蝕刻(dry etching)中任意一個方法執行。The method for manufacturing a mask support template according to claim 1, wherein the thickness of the mask metal film is reduced by any one of CMP (Chemical Mechanical Polishing), chemical wet etching (chemical wet etching), and dry etching (dry etching) carried out. 如請求項5所述的遮罩支撐模板的製造方法,其中使用CMP方法縮減遮罩金屬膜的厚度時,遮罩金屬膜一面上的表面粗糙度減少。The method for manufacturing a mask support template according to claim 5, wherein when the thickness of the mask metal film is reduced using the CMP method, the surface roughness on one side of the mask metal film is reduced. 如請求項5所述的遮罩支撐模板的製造方法,其中使用化學濕蝕刻、乾蝕刻縮減遮罩金屬膜的厚度時,在以後的步驟中進一步進行拋光,藉以減少遮罩金屬膜的一面的表面粗糙度。The method for manufacturing a mask support template according to claim 5, wherein when chemical wet etching or dry etching is used to reduce the thickness of the mask metal film, further polishing is performed in a subsequent step to reduce the surface of the mask metal film Surface roughness. 如請求項1所述的遮罩支撐模板的製造方法,其中將遮罩金屬膜的厚度縮減至5μm至20μm。The method for manufacturing a mask support template according to claim 1, wherein the thickness of the mask metal film is reduced to 5 μm to 20 μm. 如請求項1所述的遮罩支撐模板的製造方法,其中步驟(d)包括以下步驟: (d1)在遮罩金屬膜上形成圖案化之絕緣部; (d2)對絕緣部之間露出的遮罩金屬膜部分進行蝕刻以形成遮罩圖案;以及 (d3)去除絕緣部。The method for manufacturing a mask support template according to claim 1, wherein step (d) includes the following steps: (D1) Form a patterned insulating portion on the mask metal film; (D2) etching the mask metal film portion exposed between the insulating portions to form a mask pattern; and (D3) Remove the insulation. 如請求項2或4所述的遮罩支撐模板的製造方法,其中以遮罩金屬膜的厚度為基準,當第一面為0%且第二面為100%時,遮罩使用相當於遮罩金屬膜厚度的10%至90%部分中的至少一部分。The method for manufacturing a mask support template according to claim 2 or 4, wherein the mask is equivalent to the mask when the first side is 0% and the second side is 100% based on the thickness of the mask metal film At least a part of 10% to 90% of the thickness of the cover metal film. 一種遮罩支撐模板,該模板用於支撐OLED像素形成用遮罩並使遮罩與框架對應,該遮罩支撐模板包括: 一模板; 一臨時黏合部,其形成於模板上;以及 一遮罩,其藉由夾設臨時黏合部黏合至模板上,且形成有遮罩圖案, 遮罩的厚度為5μm至20μm。A mask support template for supporting a mask for forming OLED pixels and making the mask correspond to a frame, the mask support template includes: A template A temporary adhesive part formed on the template; and A mask, which is bonded to the template by interposing a temporary adhesive part, and a mask pattern is formed, The thickness of the mask is 5 μm to 20 μm. 如請求項11所述的遮罩支撐模板,其中遮罩包括從經軋延(rolling)工藝製造的遮罩金屬膜(sheet)的上表面及下表面縮減至少一部分厚度而形成之中央部。The mask support template according to claim 11, wherein the mask includes a central portion formed by reducing at least a part of the thickness from the upper surface and the lower surface of the mask metal film manufactured by the rolling process. 如請求項11所述的遮罩支撐模板,其中以遮罩金屬膜的厚度為基準,當上表面為0%且下表面為100%時,遮罩使用相當於遮罩金屬膜厚度的10%至90%部分中的至少一部分。The mask support template according to claim 11, wherein the thickness of the mask metal film is used as a reference, when the upper surface is 0% and the lower surface is 100%, the mask is equivalent to 10% of the thickness of the mask metal film To at least a part of 90%. 如請求項11所述的遮罩支撐模板,其中臨時黏合部是基於加熱可分離的黏合劑或者黏合片材,基於UV照射可分離的黏合劑或者黏合片材。The mask support template according to claim 11, wherein the temporary bonding part is based on heating a separable adhesive or adhesive sheet, and is based on UV irradiation to separate the adhesive or adhesive sheet. 如請求項11所述的遮罩支撐模板,其中與遮罩的焊接部對應之模板的邊緣部部分形成有雷射貫穿孔。The mask support template according to claim 11, wherein a laser through hole is formed in an edge portion of the template corresponding to the welding portion of the mask. 如請求項11所述的遮罩支撐模板,其中模板包括晶圓(wafer)、玻璃(glass)、氧化矽(silica)、耐熱玻璃、石英(quartz)、氧化鋁(Al2 O3 )、硼矽酸玻璃(borosilicate glass)中的任意一種材料。The mask support template according to claim 11, wherein the template includes wafer, glass, silica, heat-resistant glass, quartz, alumina (Al 2 O 3 ), boron Any material in borosilicate glass. 一種框架一體型遮罩的製造方法,框架一體型遮罩由至少一個遮罩與用於支撐遮罩的框架形成為一體,其中該方法包括以下步驟: (a)在具有至少一個遮罩單元區域之框架上,裝載利用請求項1或2所述之製造方法製造的模板,並使遮罩與框架的遮罩單元區域對應;以及 (b)將遮罩附著至框架。A method for manufacturing a frame-integrated mask, the frame-integrated mask is formed by at least one mask and a frame for supporting the mask as a whole, wherein the method includes the following steps: (A) On a frame having at least one mask unit area, load a template manufactured by the manufacturing method described in claim 1 or 2, and make the mask correspond to the mask unit area of the frame; and (B) Attach the mask to the frame.
TW108136426A 2018-10-11 2019-10-08 Template for supporting mask and producing method thereof and producing method of mask integrated frame TWI810381B (en)

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