TW202018794A - 基板處理系統及基板處理方法 - Google Patents

基板處理系統及基板處理方法 Download PDF

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Publication number
TW202018794A
TW202018794A TW108133316A TW108133316A TW202018794A TW 202018794 A TW202018794 A TW 202018794A TW 108133316 A TW108133316 A TW 108133316A TW 108133316 A TW108133316 A TW 108133316A TW 202018794 A TW202018794 A TW 202018794A
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TW
Taiwan
Prior art keywords
substrate
wafer
separation
separated
processing
Prior art date
Application number
TW108133316A
Other languages
English (en)
Chinese (zh)
Inventor
田之上隼斗
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202018794A publication Critical patent/TW202018794A/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
TW108133316A 2018-09-25 2019-09-17 基板處理系統及基板處理方法 TW202018794A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018179305 2018-09-25
JP2018-179305 2018-09-25

Publications (1)

Publication Number Publication Date
TW202018794A true TW202018794A (zh) 2020-05-16

Family

ID=69949915

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108133316A TW202018794A (zh) 2018-09-25 2019-09-17 基板處理系統及基板處理方法

Country Status (3)

Country Link
JP (1) JP7086201B2 (ja)
TW (1) TW202018794A (ja)
WO (1) WO2020066492A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7354420B2 (ja) * 2020-04-02 2023-10-02 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111606A (ja) * 2002-09-18 2004-04-08 Tokyo Seimitsu Co Ltd ウェーハの加工方法
JP4817805B2 (ja) 2004-11-25 2011-11-16 株式会社東京精密 フィルム剥離方法およびフィルム剥離装置
JP2010021398A (ja) * 2008-07-11 2010-01-28 Disco Abrasive Syst Ltd ウェーハの処理方法
KR101803790B1 (ko) * 2013-04-18 2017-12-04 한화테크윈 주식회사 웨이퍼의 시닝 방법 및 장치
JP2016064459A (ja) * 2014-09-24 2016-04-28 株式会社ディスコ 被加工物の研削方法
JP6562819B2 (ja) 2015-11-12 2019-08-21 株式会社ディスコ ＳｉＣ基板の分離方法
JP2017204606A (ja) * 2016-05-13 2017-11-16 株式会社ディスコ ウエーハ製造方法

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Publication number Publication date
JPWO2020066492A1 (ja) 2021-08-30
WO2020066492A1 (ja) 2020-04-02
JP7086201B2 (ja) 2022-06-17

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