TW202018794A - Substrate processing system and substrate processing method - Google Patents

Abstract

When thinning a substrate by separation and re-using the separated substrate, an object of the invention is to perform the separation and recycling efficiently. The invention provides a substrate processing system that processes a substrate, the system comprising a separation section which separates the substrate into a first separated substrate and a second separated substrate at an internal surface reformed layer formed inside the substrate in the in-plane direction, a processing section which performs grinding of the separation surface of the first separated substrate and the separation surface of the second separated substrate, a transport mechanism which transports the substrate to at least the separation section and the processing section, and an inverting mechanism which inverts the front and back surfaces of the second separated substrate.

Description

Substrate processing system and substrate processing method

The present disclosure relates to a substrate processing system and a substrate processing method.

Patent Document 1 discloses a method of processing a wafer in which a plurality of elements are formed on the surface side. In this processing method, after the laser light is irradiated between the front side and the back side of the wafer to form a metamorphic layer, it is separated into a back side wafer closer to the back side than the metamorphic layer and a surface side closer to the front side than the metamorphic layer Wafer. Further, the backside wafer is recycled. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 2010-21398

[Problems to be solved by invention]

The technique of the present disclosure separates and thins the substrate and further reuses the separated substrate to perform the separation and regeneration with good efficiency. [Means to solve the problem]

One aspect of the present disclosure is a substrate processing system for processing a substrate, which includes a separating part, a processing part, a conveying mechanism, and a reversing mechanism. Separating the substrate into a first separation substrate and a second separation substrate; the processing section respectively grinds the separation surface of the first separation substrate and the separation surface of the second separation substrate; the transport mechanism at least treats the separation section or the processing section The substrate is transported; the inversion mechanism inverts the front and back surfaces of the second separated substrate. [Effect of invention]

According to the present disclosure, when the substrate is separated and thinned, and the separated substrate is further reused, this separation and regeneration can be performed with good efficiency.

[Form for carrying out the invention]

In the manufacturing process of a semiconductor element, a process of thinning the wafer is performed on a semiconductor wafer (hereinafter referred to as a wafer) having a plurality of elements formed on the surface. There are various methods for thinning the wafer, for example, there are methods for grinding and processing the back surface of the wafer, and methods for separating the wafer as disclosed in Patent Document 1. In particular, in the method disclosed in Patent Document 1, the components constituting the separated front-side wafer can be manufactured, and the back-side wafer can be recycled.

Here, a modified layer (modified layer) remains on the surface of the separated back-side wafer, and cannot be directly recycled (recycled) in this state. However, regarding how to handle the modified layer of the backside wafer, Patent Document 1 does not disclose or suggest any. Even the method of reusing the backside wafer with good efficiency is not considered at all. Therefore, when wafers are separated and thinned, and the separated wafers are further reused, conventional wafer processing has room for improvement.

The disclosed technique is to separate the wafers and reuse the separated wafers with good efficiency. Hereinafter, the wafer processing system as the substrate processing system of the present embodiment and the wafer processing method as the substrate processing method will be described with reference to the drawings. In addition, in this specification and the drawings, the same symbols are attached to the elements having substantially the same functional structure, and repeated description is omitted.

First, the structure of the wafer processing system of this embodiment will be described. FIG. 1 is a schematic plan view schematically showing the structure of the wafer processing system 1.

In the wafer processing system 1, as shown in FIGS. 2 and 3, a predetermined process is performed on the stacked wafer T where the processed wafer W as the substrate is bonded to the support wafer S, and the processed wafer W is separated to make Its thinning. Hereinafter, in the wafer W to be processed, the surface bonded to the support wafer S is referred to as a surface Wa, and the surface on the opposite side of the surface Wa is referred to as a back surface Wb. Similarly, in the support wafer S, the surface bonded to the wafer W to be processed is referred to as the surface Sa, and the surface on the opposite side of the surface Sa is referred to as the back surface Sb.

The wafer W to be processed is a semiconductor wafer such as a silicon wafer, and an element layer D including a plurality of elements is formed on the surface Wa. In addition, an oxide film Fw, for example, a SiO ₂ film (TEOS film) is further formed on the element layer D. In addition, the peripheral portion of the wafer W to be processed is chamfered, and the thickness of the peripheral portion decreases toward the front end.

The supporting wafer S is a wafer supporting the processed wafer W, for example, a silicon wafer. An oxide film Fs, for example, a SiO ₂ film (TEOS film) is formed on the surface Sa of the support wafer S. In addition, the support wafer S has a function of protecting the elements of the surface Wa of the wafer W to be processed. In addition, when a plurality of elements are formed on the surface Sa of the support wafer S, an element layer (not shown) is formed on the surface Sa in the same manner as the wafer W to be processed.

In addition, in FIG. 2, in order to avoid the complexity of the illustration, the illustration of the element layer D and the oxide films Fw and Fs is omitted. In addition, in the other drawings used in the following description, the illustration of the element layer D and the oxide films Fw and Fs may be omitted.

Furthermore, in the wafer processing system 1 of the present embodiment, the wafer W to be processed of the stacked wafer T is separated. In the following description, the processed wafer W on the separated surface Wa side is referred to as the first divided wafer W1 as the first divided substrate, and the processed wafer W on the separated back surface Wb side is referred to as the second The second separation wafer W2 of the separation substrate. The first separation wafer W1 has the element layer D and can be manufactured. The second separated wafer W2 can be reused. In addition, the first separated wafer W1 refers to the wafer W to be processed supported by the support wafer S, and may be referred to as the first separated wafer W1 together with the support wafer S. In addition, the surface separated by the first separation wafer W1 is called the separation surface W1a, and the surface separated by the second separation wafer W2 is called the separation surface W2a.

As shown in FIG. 1, the wafer processing system 1 has a structure in which the loading-in/out-out station 2 and the processing station 3 are connected as a whole. The loading and unloading station 2 and the processing station 3 are arranged side by side from the positive direction side of the X axis to the negative direction side. The carrying-in/out station 2 carries in and out the wafer cassettes Ct, Cw1, Cw2 that can accommodate a plurality of stacked wafers T, a plurality of first separated wafers W1, a plurality of second separated wafers W2, and the outside respectively, for example . The processing station 3 has various processing devices that perform predetermined processing on the stacked wafer T and the separated wafers W1 and W2.

A cassette mounting table 10 is provided at the loading-in/out station 2. In the example shown in the figure, a plurality of, for example, three cassettes Ct, Cw1, Cw2 are freely placed in a row in the Y-axis direction on the cassette mounting table 10. In addition, the number of cassettes Ct, Cw1, and Cw2 mounted on the cassette mounting table 10 is not limited to this embodiment, and can be arbitrarily determined.

At the carrying-in/out station 2, on the X-axis negative direction side of the cassette mounting table 10, a wafer transfer area 20 is provided adjacent to the cassette mounting table 10. The wafer transfer area 20 is provided with a wafer transfer device 22 that can move freely on a transfer path 21 that extends in the Y-axis direction. The wafer transfer device 22 has two transfer arms 23 and 23 for holding and transferring the stacked wafer T and the separated wafers W1 and W2. Each transport arm 23 is configured to move freely in the horizontal direction (X-axis direction and Y-axis direction), the vertical direction, around the horizontal axis, and around the vertical axis. In addition, the structure of the transport arm 23 is not limited to this embodiment, and any structure may be adopted.

The processing station 3 is provided with, for example, three processing blocks G1 to G3 and a wafer transfer area 30. The first processing block G1, the second processing block G2, and the third processing block G3 are sequentially arranged from the negative side of the X-axis (the side of the carrying-in/out station 2) to the positive side. The first processing block G1 is disposed on the positive side of the X-axis direction of the wafer transfer area 30, and the second processing block G2 and the third processing block G3 are respectively disposed on the positive side of the Y-axis direction of the wafer transfer area 30.

The wafer transfer area 30 is provided with a wafer transfer device 32 having a function of a transfer mechanism that can move freely on a transfer path 31 extending in the X-axis direction. The wafer transfer device 32 is configured to transfer the stacked wafer T and the separated wafers W1 and W2 to the processing devices of the processing blocks G1 to G3. In addition, the wafer transfer device 32 has two transfer arms 33 and 33 for holding and transferring the stacked wafer T and the separated wafers W1 and W2. In one example, the first transfer arm 33 holds the stacked wafer T and the separated wafers W1 and W2 from below, and the second transfer arm 33 holds the stacked wafer T and the separated wafers W1 and W2 from above. Each transport arm 33 is supported by the multi-joint arm member 34 and is configured to move freely in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis. In addition, the structure of the transfer arm 33 is not limited to this embodiment, and any structure may be adopted.

The first processing block G1 is provided with two wet etching devices 40 and 41, a calibration device 50, and two cleaning devices 51 and 52. The wet etching devices 40 and 41 are sequentially stacked and arranged from above on the positive side of the Y axis. The calibration device 50 and the two cleaning devices 51 and 52 are sequentially stacked on the negative side of the Y axis from the top.

In the second processing block G2, the reversing device 60 and the reforming separation device 61 are sequentially stacked from above. In addition, the turning device 60 constitutes the turning mechanism of the present disclosure. The reforming and separating device 61 also serves as the separating part and the internal surface reforming part of the present disclosure.

A processing device 70 as a processing section is provided in the third processing block G3. In addition, the number and arrangement of the processing devices 70 are not limited to this embodiment, and a plurality of processing devices 70 may be arbitrarily arranged. Furthermore, when a plurality of processing devices 70 are provided, a plurality of wafer transfer devices 32 may be provided in the wafer transfer region 30.

The wet etching devices 40 and 41 respectively etch the separation surfaces W1 a and W2 a of the separated wafers W1 and W2 polished by the processing device 70. For example, a chemical solution (etching solution) is supplied to the separation surfaces W1a and W2a of the separation wafers W1 and W2. In addition, as the chemical solution, for example, HF, HNO ₃ , H ₃ PO ₄ , TMAH, Choline, KOH, or the like can be used.

The calibration device 50 adjusts the horizontal orientation of the stacked wafer T before processing. For example, by rotating the stacked wafer T held on the chuck (not shown), the position of the notch of the wafer W to be processed is detected by a detection part (not shown), and the notch is adjusted Position of the stacked wafer T in the horizontal direction.

The cleaning devices 51 and 52 respectively clean the separation surfaces W1 a and W2 a of the separated wafers W1 and W2 polished by the processing device 70. For example, the brush is brought into contact with the separation surfaces W1a, W2a, and the separation surfaces W1a, W2a are cleaned by scrubbing. In addition, the separation surfaces W1a and W2a may use a pressurized cleaning liquid.

The reversing device 60 reverses the front and back surfaces of the second separation wafer W2 separated by the reforming separation device 61. In addition, the structure of the turning device 60 is arbitrary.

The reforming separation device 61 irradiates the inside of the wafer W to be processed with laser light to form an internal surface reforming layer described later, and further uses the internal surface reforming layer as a starting point to separate the wafer W to be processed into the first separated crystals The circle W1 and the second separated wafer W2.

As shown in FIG. 4, the reforming separation device 61 has a chuck 80 that holds the stacked wafer T with the wafer to be processed W on the upper side and the support wafer S on the lower side. The chuck 80 is configured to be movable in the X-axis direction and the Y-axis direction by the moving portion 81. The moving part 81 is constituted by a general precision XY slide table. In addition, the suction cup 80 is configured to be rotatable about a vertical axis by a rotating portion 82.

Above the chuck 80, a laser head 90 serving as an internal surface modification portion that irradiates the inside of the wafer W to be processed with laser light is provided. The laser head 90 condenses and irradiates laser light of a high-frequency pulsed laser light oscillated from a laser light oscillator (not shown) and having a wavelength that is transparent to the wafer W to be processed into the wafer W Book a location. As a result, within the wafer W to be processed, the portion where the laser light is concentrated is modified to form an internal surface modification layer. In addition, the laser head 90 simultaneously irradiates the laser light from the laser light oscillator into a plural number by, for example, a lens. At this time, a plurality of laser lights are irradiated from the laser head 90, and a plurality of internal surface modification layers are simultaneously formed inside the wafer W to be processed. The laser head 90 is configured to be movable in the X-axis direction and the Y-axis direction by the moving portion 91. The moving part 91 is constituted by a general precision XY slide table. In addition, the laser head 90 is configured to be movable in the Z-axis direction by the lifting portion 92.

Further, above the chuck 80, a suction pad 100 that suction-holds the back surface Wb of the wafer W to be processed is provided. The suction pad 100 is configured to be rotatable about a vertical axis by a rotating part 101. In addition, the suction pad 100 is configured to be movable in the Z-axis direction by the lifting portion 102.

As shown in FIG. 1, the processing device 70 polishes the separation surface W1a of the first separation wafer W1 and the separation surface W2a of the second separation wafer W2, respectively. The processing device 70 includes a turntable 110, a first polishing unit 120, and a second polishing unit 130.

The rotating table 110 is configured to rotate freely about the vertical center axis 111 of the rotating shaft by a rotating mechanism (not shown). On the turntable 110, four chucks 112 as holding portions that suck and hold and separate the wafers W1 and W2 are provided. The suction pads 112 are arranged on the same circumference as the rotary table 110, that is, at 90-degree intervals. The four suction cups 112 are rotated by the rotary table 110 and can be moved to the handover positions A1, A2 and the processing positions B1, B2. In addition, the suction cup 112 is held on a suction cup base (not shown in the figure), and is configured to be rotatable by a rotating mechanism (not shown in the figure).

In this embodiment, the first delivery position A1 is on the X-axis negative direction side and the Y-axis negative direction side of the turntable 110, and the first separation wafer W1 can be transferred. The second transfer position A2 is a position on the positive X-axis side and a negative Y-axis side of the turntable 110, and can transfer the second separated wafer W2. The first processing position B1 is a position on the X-axis positive direction side and a Y-axis positive direction side of the turntable 110, and the first polishing unit 120 can be disposed. The second processing position B2 is a position on the X-axis negative direction side and a Y-axis negative direction side of the turntable 110, and the second polishing unit 130 may be disposed.

In the first polishing unit 120, the separation surface W1a of the first separation wafer W1 is polished. The first polishing unit 120 has a first polishing portion 121 having a ring-shaped and freely rotating grindstone (not shown). In addition, the first polishing portion 121 is configured to be movable in the vertical direction along the pillar 122. Furthermore, by rotating the chuck 112 and the grindstone in a state where the separation surface W1a of the first separated wafer W1 held by the chuck 112 is in contact with the grindstone, the grindstone is further lowered, and the first separated crystal is polished The separation surface W1a of the circle W1. Thereby, the inner surface modification layer remaining on the separation surface W1a of the first separation wafer W1 is removed.

In the second polishing unit 130, the separation surface W2a of the second separation wafer W2 is polished. The second polishing unit 130 has a second polishing portion 131 having a ring-shaped and freely rotating grindstone (not shown). In addition, the second polishing portion 131 is configured to be movable in the vertical direction along the pillar 132. Furthermore, by making the separation surface W2a of the second separation wafer W2 held on the chuck 112 abut the grindstone, the chuck 112 and the grindstone are rotated separately to further lower the grindstone, and the second separated crystal is polished The separation surface W2a of the circle W2. As a result, the inner surface modification layer remaining on the separation surface W2a of the second separation wafer W2 is removed.

The above wafer processing system 1 is provided with a control device 140. The control device 140 is, for example, a computer, and has a program storage unit (not shown). A program for controlling the processing of the stacked wafer T of the wafer processing system 1 is stored in the program storage unit. In addition, the program storage unit also stores programs for realizing the wafer processing system 1 described later in order to control the operation of the drive systems of the various processing devices and transport devices described above. In addition, the above program can be recorded in a memory medium H that can be read by a computer, and can also be installed in the control device 140 from the memory medium H.

Next, the wafer processing performed using the wafer processing system 1 configured as above will be described. FIG. 5 is a flowchart showing the main processes of wafer processing. In addition, in this embodiment, the bonding apparatus (not shown) outside the wafer processing system 1 bonds the processed wafer W and the support wafer S by van der Waals force and hydrogen bonding (intermolecular force). The stacked wafer T is formed in advance.

First, the cassette Ct in which the plural stacked wafers T shown in FIG. 6( a) are stored is placed on the cassette stage 10 of the carry-in/out station 2.

Next, the stacked wafer T in the wafer cassette Ct is taken out by the wafer transfer device 22 and transferred to the calibration device 50. In the calibration device 50, the horizontal orientation of the stacked wafer T (processed wafer W) is adjusted (step P1 in FIG. 5).

Then, the stacked wafer T is transferred to the reforming and separating device 61 by the wafer transfer device 32. In the modification separation device 61, as shown in FIG. 6(b), an internal surface modification layer M1 is formed inside the wafer W to be processed (step P2 in FIG. 5).

As shown in FIG. 7, the inside of the wafer W to be processed is irradiated with laser light L from the laser head 90 to form an internal surface modification layer M1. The inner surface modification layer M1 extends in the plane direction and has a horizontally long aspect ratio. The lower end of the inner surface modification layer M1 is located slightly above the target surface (dotted line in FIG. 7) of the wafer W to be processed after polishing. That is, the distance H1 between the lower end of the inner surface modification layer M1 and the surface Wa of the wafer W to be processed is slightly larger than the target thickness H2 of the wafer W to be processed after polishing. In addition, the internal surface modification layer M1 may have a length-to-length aspect ratio, and the pitch of the plurality of internal surface modification layers M1 may be reduced. In addition, the crack C1 progresses from the inner surface modification layer M1 in the surface direction. Furthermore, when the distance between the inner surface modification layers M1 is small, there is no crack C1.

As shown in FIGS. 7 and 8, the laser head 90 and the stacked wafer T are moved relatively in the horizontal direction, and a plurality of internal surface modification layers M1 are formed inside the wafer W to be processed. Specifically, first, the laser head 90 is moved in the X-axis direction to form a row of internal surface modification layers M1. Thereafter, the laser head 90 is moved in the Y-axis direction, and then the laser head 90 is moved in the X-axis direction to form another row of internal surface modification layers M1. The plural inner surface modification layers M1 are formed at the same height. In this way, the internal surface modification layer M1 is formed on the entire internal surface of the wafer W to be processed.

In addition, in the modification and separation device 61, a plurality of laser lights L may be simultaneously irradiated from the laser head 90. At this time, the inner surface modification layer M1 can be formed in a shorter time, and the throughput of wafer processing can be improved. In addition, the reforming and separating device 61 may move the laser head 90 in the horizontal direction while rotating the suction cup 80. At this time, the inner surface modification layer M1 is formed in a spiral shape in plan view. In addition, the pitch of the plurality of inner surface modification layers M1 may be changed in the concentric and radial directions of the wafer W to be processed.

Next, in the same reforming separation device 61, as shown in FIG. 6(c), the wafer W to be processed is separated into a first separation wafer W1 and a second separation wafer using the inner surface modification layer M1 as a base point W2 (step P3 in FIG. 5).

As shown in FIG. 9( a ), the back surface Wb of the wafer W to be processed is sucked and held by the suction pad 100. Next, the suction pad 100 is rotated to separate the first separation wafer W1 and the second separation wafer W2 using the inner surface modification layer M1 as a boundary. Thereafter, as shown in FIG. 9( b ), in a state where the suction pad 100 suction-holds the second separation wafer W2, the suction pad 100 is raised to separate the second separation wafer W2 from the first separation wafer W1. In addition, the inner surface modification layer M1 remains on the separation surface W1a of the first separation wafer W1 and the separation surface W2a of the second separation wafer W2, respectively.

In addition, the method of separating the wafer W to be processed is not limited to this embodiment. As shown in FIG. 9(b), when the second separation wafer W2 can be separated only by raising the suction pad 100, the rotation of the suction pad 100 shown in FIG. 9(b) may be omitted. In addition, for example, a tape (not shown) may be used instead of the adsorption pad 100, and the processed wafer W is held and separated by the tape. Furthermore, before the wafer W is adsorbed and held by the suction pad 100, for example, ultrasonic waves may be applied to at least the inner surface modification layer M1 of the processed wafer W, or the inner surface modification layer M1 may be heated. At this time, the wafer W to be processed is easily separated using the internal surface modification layer M1 as a base point.

Then, the second separation wafer W2 is transferred to the reversing device 60 by the wafer transfer device 32. In the inverting device 60, the front and back surfaces of the second separated wafer W2 are inverted (step P4 in FIG. 5). Thereafter, the second separated wafer W2 is transferred to the processing device 70 by the wafer transfer device 32, and as shown in FIG. 10(a), is transferred to the chuck 112 at the second transfer position A2.

Simultaneously with this step P4, the wafer transfer device 32 transfers the first separated wafer W1 to the processing device 70, and as shown in FIG. 10(a), it is transferred to the chuck 112 at the first transfer position A1.

Next, as shown in FIG. 10(b), the turntable 110 is rotated counterclockwise by 180∘ to move the first separated wafer W1 to the first processing position B1, and the second separated wafer W2 to the second processing position B2.

Thereafter, at the first processing position B1, as shown in FIG. 6(d), the separation surface W1a of the first separation wafer W1 is polished to remove the internal surface modification layer M1 remaining on the separation surface W1a. At the same time, at the second processing position B2, as shown in FIG. 6(e), the separation surface W2a of the second separation wafer W2 is polished to remove the internal surface modification layer M1 remaining on the separation surface W2a (step P5 in FIG. 5) ).

Next, the turntable 110 is rotated counterclockwise by 180∘ to assume the state shown in FIG. 10(a), that is, the first separated wafer W1 is moved to the first delivery position A1, and the second separated wafer W2 is moved to The second handover position A2. In addition, the separation surface W1a of the first separation wafer W1 may be washed with a cleaning liquid at a first transfer position A1 using a cleaning liquid nozzle (not shown). Also, a cleaning liquid nozzle (not shown) may be used at the second transfer position A2 to clean the separation surface W2a of the second separation wafer W2 with the cleaning liquid.

Thereafter, the first split wafer W1 is transferred to the cleaning device 51 by the wafer transfer device 32, and the second split wafer W2 is transferred to the cleaning device 52 by the wafer transfer device 32. In the cleaning device 51, the separation surface W1a of the first separation wafer W1 is scrubbed and cleaned, and in the cleaning device 52, the separation surface W2a of the second separation wafer W2 is scrubbed and cleaned (step P6 in FIG. 5).

Then, the first separated wafer W1 is transferred to the wet etching device 40 by the wafer transfer device 22, and the second separated wafer W2 is transferred to the wet etching device 41 by the wafer transfer device 22. In the wet etching device 40, the separation surface W1a of the first separation wafer W1 is wet-etched with a chemical solution, and in the wet etching device 41, the separation surface W2a of the second separation wafer W2 is wet-etched with a chemical solution (step P7 in FIG. 5) ). In some cases, the separation surfaces W1a and W2a polished by the processing device 70 form polishing marks, respectively. In this step P7, by wet etching, the polishing marks can be removed, and the separation surfaces W1a and W2a can be smoothed.

After that, the first separation wafer W1 and the second separation wafer W2 that have undergone all the processes are transferred to the cassettes Cw1 and Cw2 of the cassette mounting table 10 by the wafer transfer device 22. In this way, a series of wafer processing of the wafer processing system 1 is completed.

According to the above embodiment, steps P1 to P7 can be performed to separate the wafer W to be processed, and the separation surfaces W1a, W2a of the separated wafers W1, W2 can be appropriately processed by grinding, wet etching, etc., respectively. Therefore, the first separated wafer W1 having the element layer D can be manufactured, and the second separated wafer W2 can be reused. Moreover, since these steps P1 to P7 are performed by one wafer processing system 1, wafer processing can be performed with good efficiency.

In addition, since the processing apparatus 70 of the present embodiment includes the turntable 110, the first polishing unit 120, and the second polishing unit 130, the polishing of the separation surface W1a of the first separation wafer W1 and the second The separation surface W2a of the separation wafer W2 is polished. Therefore, the throughput of wafer processing can be improved.

In addition, the processing device 70 of this embodiment corresponds to the four suction cups 112 of the rotary table 110 and is provided with delivery positions A1, A2 and processing positions B1, B2. In this way, as shown in FIG. 11, the polishing of the separation surface W1 a at the first processing position B1 and the delivery of the first separation wafer W1 at the first delivery position A1 can be performed simultaneously. Similarly, the polishing of the separation surface W2a at the second processing position B2 and the delivery of the second separation wafer W2 at the second delivery position A2 may be performed simultaneously. Therefore, the throughput of wafer processing can be improved.

Furthermore, since the processing device 70 of the present embodiment is provided with the transfer positions A1, A2 and the processing positions B1, B2, compared to, for example, using two rotary tables with one transfer position and one processing position, the Use few. As a result, the occupied area (footprint) of the processing device 70 can be reduced, and further the occupied area of the wafer processing system 1 can be reduced.

Furthermore, in this embodiment, when the wafer W to be processed is thinned, after the internal surface modification layer M1 is formed in the wafer W to be processed in step P2, the internal surface modification layer M1 is used in step P3 as The base point separates the wafer W to be processed. For example, when grinding the back surface Wb of the wafer W to be thinned as is conventional, the grinding stone wears and the polishing liquid is used, so waste liquid treatment is also required. On the other hand, in this embodiment, since the laser head 90 itself deteriorates to a lesser extent over time and has fewer consumables, the frequency of maintenance can be reduced. In addition, since it is a dry process using laser, there is no need for grinding fluid and wastewater treatment. Therefore, the operating cost can be reduced. Furthermore, since the polishing liquid does not get into the side of the support wafer S, contamination of the support wafer S can be suppressed.

In addition, in the present embodiment, the separation surface W1a is polished in step P5. This polishing only needs to remove the inner surface modification layer M1, and the amount of polishing is as small as several tens of μm. On the other hand, when the back surface Wb is polished to thin the wafer W to be processed as is conventional, the amount of polishing is, for example, 700 μm or more, and the degree of wear of the grindstone is large. Therefore, in this embodiment, the frequency of maintenance can be reduced.

In addition, when the wafer processing system 1 of the present embodiment is provided with a plurality of processing devices 70, one processing device 70 may polish the separation surface W1a of the first separated wafer W1, and another processing device 70 may polish the second separated crystal The separation surface W2a of the circle W2.

Next, another embodiment of the wafer processing system will be described.

FIG. 12 is a schematic plan view schematically showing the structure of a wafer processing system 200 according to another embodiment. The wafer processing system 200 performs the separation of the wafer W to be processed and the formation of the inner surface modified layer M1 of the modification and separation device 61 of the wafer processing system 1 of the above-described embodiment using different devices. That is, the wafer processing system 200 has the separation and inversion device 201 and the modification device 202 instead of the inversion device 60 and the modification and separation device 61 of the wafer processing system 1. The separation inversion device 201 and the reforming device 202 are sequentially stacked on the second processing block G2 from above.

The modification device 202 forms an internal surface modification layer M1 inside the wafer W to be processed. The reforming device 202 has, for example, a member (laser head 90 etc.) for forming the internal surface reforming layer M1 in the structure of the reforming separation device 61. The separation and reversing device 201 separates the wafer W to be processed using the internal surface modification layer M1 as a base point, and also reverses the front and back surfaces of the separated second separation wafer W2. The separating and turning device 201 has a structure of the turning device 60 in addition to, for example, a member (absorption pad 100 etc.) for separating the processed wafer W in the structure of the reforming and separating device 61.

The wafer processing system 200 of this embodiment can also perform steps P1 to P7 of the above embodiment, and can enjoy the same effects as those of this embodiment.

13 is a schematic plan view schematically showing the structure of a wafer processing system 300 according to another embodiment. The wafer processing system 300 performs the separation of the processed wafer W of the modification and separation device 61 of the wafer processing system 1 of the above-described embodiment and the second separation wafer W2 of the reversing device 60 on the inside of the processing device 70. Flip. That is, the wafer processing system 300 includes the reforming device 301 and the separation and reversing unit 302 instead of the reversing device 60 and the reforming and separating device 61 of the wafer processing system 1.

The modification device 301 is provided in the second processing block G2. The modification device 301 forms an internal surface modification layer M1 inside the wafer W to be processed. The reforming device 301 has, for example, a member (laser head 90 or the like) for forming the internal surface reforming layer M1 in the structure of the reforming separation device 61.

The separation and inversion unit 302 is provided above the rotating table 110 and the suction cup 112 at the second transfer position A2 of the processing device 70. The separation and reversing unit 302 has a separation mechanism 303 that separates the wafer W to be processed using the internal surface modification layer M1 as a base point, and a reversing mechanism 304 that reverses the front and back surfaces of the separated second separated wafer W2.

As shown in FIG. 14, the separation mechanism 303 has a suction pad 310 that suction-holds the back surface Wb of the wafer W to be processed to the stacked wafer T held by the chuck 112. The suction pad 310 is configured to be rotatable about a vertical axis by a rotating portion 311. In addition, the suction pad 310 is configured to be movable in the Z-axis direction by the lifting portion 312. In addition, in the separation mechanism 303, first, the suction pad 310 is rotated with the suction pad 310 sucking and holding the back surface Wb of the processed wafer W, and the first surface is separated by using the inner surface modification layer M1 as a boundary. The wafer W1 is separated from the second separation wafer W2. After that, in a state where the suction pad 310 suction-holds the second separation wafer W2, the suction pad 100 is raised to separate the second separation wafer W2 from the first separation wafer W1.

The reversing mechanism 304 has a holding portion 320 that holds the second separated wafer W2. The method of holding the second separated wafer W2 of the holding unit 320 is not particularly limited, and is, for example, suction holding. The holding portion 320 is configured to be rotatable about a horizontal axis by the rotating portion 321. In addition, the holding portion 320 is configured to be movable in the Z-axis direction by the lifting portion 322. In addition, in the reversing mechanism 304, while the second separation wafer W2 is held by the holding portion 320, the holding portion 320 is rotated around the horizontal axis to invert the front and back surfaces of the second separation wafer W2.

At this time, in step P2, in the reforming apparatus 301, an internal surface reforming layer M1 is formed inside the wafer W to be processed. After that, the wafer W to be processed is transferred to the processing device 70 by the wafer transfer device 32 in a state of being supported by the support wafer S, that is, in a state of superimposing the wafer T. In the processing device 70, the stacked wafer T is transferred to the chuck 112 at the second transfer position A2.

Then, in step P3, the wafer W to be processed is separated into the separated wafers W1 and W2 by the separation mechanism 303 while the stacked wafer T is held by the chuck 112. Then, in step P4, the separated second separated wafer W2 is transferred to the holding portion 320 of the reversing mechanism 304, and the holding portion 320 is rotated around the horizontal axis to invert the front and back surfaces of the second separated wafer W2. Next, the first separated wafer W1 is transferred to the chuck 112 at the first transfer position A1, and the second separated wafer W2 is still held at the chuck 112 at the second transfer position A2. In addition, the transfer of the first separated wafer W1 may be performed by the wafer transfer device 32. Alternatively, while the front and back surfaces of the second separation wafer W2 are inverted by the inversion mechanism 304, the turntable 110 may be rotated to transfer the first separation wafer W1 from the second delivery position A2 to the first delivery position A1.

In addition, the other steps P1, P5 to P7 are the same as the above-mentioned embodiment. The wafer processing system 300 of this embodiment can also enjoy the same effects as the above-described embodiment.

The wafer processing systems 1, 200, and 300 of the above embodiments may also include CMP devices (CMP: Chemical Mechanical Polishing, chemical mechanical polishing) instead of the wet etching devices 40, 41. This CMP device has the same function as the wet etching devices 40 and 41. That is, in the CMP device, the separation surfaces W1a and W2a polished by the processing device 70 are polished. Next, the machining device 70 removes the polishing marks formed on the separation surfaces W1a and W2a to smooth the separation surfaces W1a and W2a. In addition, the wafer processing systems 1, 200, and 300 may have both wet etching devices 40, 41 and CMP devices, and perform both wet etching and CMP on the separation surfaces W1a, W2a.

In the wafer processing systems 1, 200, and 300 of the above embodiments, the surface and back surface of the second separated wafer W2 are turned over in the turning device 60, the separating and turning device 201, and the separating and turning unit 302, respectively. The transfer arm 33 of 32 inverts the front and back surfaces of the second separated wafer W2. At this time, as shown in FIG. 15, the transfer arm 33 supported by the arm member 34 rotates about the horizontal axis, and the front and back surfaces of the second separated wafer W2 are reversed.

In addition, the wafer transfer device 32 has two transfer arms 33, and as shown in FIG. 16, one transfer arm 400 may hold and transfer two separated wafers W1 and W2. An adsorption pad 401 that adsorbs and holds the first separated wafer W1 is provided on one surface of the transfer arm 400, and an adsorption pad 402 that adsorbs and holds the second separated wafer W2 is provided on the other surface. The transfer arm 400 is supported by the arm member 34 and is configured to rotate freely about a horizontal axis.

In the wafer processing systems 1, 200, and 300 of the above embodiments, an internal surface modification layer M1 is formed inside the wafer to be processed W in the reforming separation device 61, the reforming devices 202, 301, but also It can be performed outside the wafer processing system 1, 200, 300. In this case, an internal surface modification layer M1 is previously formed inside the wafer W to be processed that is transferred to the wafer processing systems 1, 200, and 300.

Here, usually, the peripheral portion of the processed wafer W is subjected to beveling, and when the back surface Wb of the processed wafer W is polished and thinned, the peripheral portion of the processed wafer W is sharp. Shape (so-called blade shape). As a result, debris is generated in the peripheral portion of the wafer W to be processed, and the wafer W to be processed may be damaged. Therefore, the so-called whole edge of the peripheral portion of the wafer W to be processed is removed before the polishing process.

Therefore, the wafer processing systems 1, 200, and 300 of the above embodiments can also be rimmed. In the following description, the case where the wafer processing system 1 performs edging will be described.

In the wafer processing system 1, the entire edge is performed in the reforming and separating device 61. That is, in the reforming separation device 61, a peripheral reforming layer is formed in the thickness direction along the boundary between the peripheral portion and the central portion of the wafer W to be processed, and the wafer modifying the wafer W is removed using the peripheral reforming layer as a base point Peripheral Department. In the modification and separation device 61 of the present embodiment, the laser head 90 has the function of a peripheral modification portion, and a peripheral modification layer is formed inside the wafer W to be processed.

Next, the wafer processing of another embodiment performed using the wafer processing system 1 will be described. FIG. 17 is a flowchart showing the main processes of the wafer. In the present embodiment, the same processing as the embodiment shown in FIG. 5 will not be described in detail.

First, as shown in FIG. 18( a ), the cassette Ct storing a plurality of stacked wafers T is placed on the cassette mounting table 10 of the carry-in/out station 2.

Next, the stacked wafer T in the wafer cassette Ct is taken out by the wafer transfer device 22 and transferred to the calibration device 50. In the calibration device 50, the horizontal orientation of the stacked wafer T (wafer to be processed W) is adjusted (step Q1 in FIG. 17).

Then, the stacked wafer T is transferred to the reforming and separating device 61 by the wafer transfer device 32. In the modification separation device 61, as shown in FIG. 18(b), a peripheral modification layer M2 is formed inside the wafer W to be processed (step Q2 in FIG. 17).

In the reforming and separating apparatus 61, as shown in FIG. 19, the laser head 90 is moved above the wafer W to be processed and at the boundary between the peripheral portion We and the central portion Wc of the wafer W. Thereafter, while the chuck 80 is rotated by the rotating portion 82, the laser light L is irradiated from the laser head 90 to the inside of the wafer W to be processed. Then, along the boundary between the peripheral edge portion We and the central portion Wc, an annular peripheral modified layer M2 is formed.

The peripheral modified layer M2 serves as a base point when removing the peripheral edge portion We over the entire edge, and forms a ring shape along the boundary between the peripheral edge portion We and the central portion Wc of the wafer W to be processed. In addition, the peripheral edge portion We is, for example, in the range of 1 mm to 5 mm in the radial direction from the outer end of the wafer W to be processed, and includes a chamfered portion.

In addition, the peripheral modified layer M2 extends in the thickness direction and has a longitudinal aspect ratio. The lower end of the peripheral modified layer M2 is located above the target surface (dashed line in FIG. 19) of the processed wafer W after polishing. That is, the distance H3 between the lower end of the peripheral modified layer M2 and the surface Wa of the wafer W to be processed is greater than the target thickness H2 of the wafer W to be processed after polishing. At this time, the wafer W to be processed after polishing does not leave the peripheral modified layer M2.

Furthermore, inside the wafer W to be processed, the crack C2 develops from the peripheral modified layer M2 and reaches the surface Wa. However, the crack C2 did not reach the back Wb.

Next, in the same reforming separation device 61, as shown in FIG. 18(c), an internal surface reforming layer M3 is formed inside the wafer W to be processed (step Q3 in FIG. 17). Similar to the internal surface modification layer M1 shown in FIG. 6, the internal surface modification layer M3 extends in the plane direction of the wafer W to be processed. In addition, the inner surface modification layer M3 is formed at the same height as the peripheral modification layer M2, and the lower end of the inner surface modification layer M3 is located above the target surface of the wafer W to be processed after polishing. In addition, a plurality of internal surface modification layers M3 are formed in the plane direction, and the plurality of internal surface modification layers M3 are formed in the plane direction from the central portion to the peripheral modification layer M2, that is, formed in the central portion Wc. In addition, the method of forming the inner surface modification layer M3 is the same as the above step P2. In addition, the crack C3 progresses from the inner surface modification layer M3 in the surface direction. Furthermore, when the distance between the inner surface modification layers M3 is small, there is no crack C3.

Then, in the same reforming and separating device 61, as shown in FIG. 18(d), the wafer W to be processed is separated into the first split wafer W1 using the internal surface reforming layer M3 and the peripheral reforming layer M2 as base points. Separated from the second wafer W2 (step Q4 in FIG. 17). At this time, since the inner surface modification layer M3 and the peripheral modification layer M2 are formed at the same height, the second separated wafer W2 and the peripheral portion We are integrally separated. In addition, the separation method of the wafer W to be processed is the same as the above step P3.

Next, the second separation wafer W2 is transferred to the reversing device 60 by the wafer transfer device 32. In the inverting device 60, the front and back surfaces of the second separated wafer W2 are inverted (step Q5 in FIG. 17). In addition, the inversion method of the second separated wafer W2 is the same as the above step P4.

After that, the first separated wafer W1 and the second separated wafer W2 are respectively transferred to the processing device 70 by the wafer transfer device 32. In the processing device 70, as shown in FIG. 18(e), the separation surface W1a of the first separation wafer W1 is polished to remove the peripheral modification layer M2 and the inner surface modification layer M3 remaining on the separation surface W1a. At the same time, as shown in FIG. 18(f), the separation surface W2a of the second separation wafer W2 is polished to remove the peripheral modification layer M2 and the inner surface modification layer M3 remaining on the separation surface W2a (step Q6 of FIG. 17 ). In addition, the polishing method of the separation surfaces W1a and W2a is the same as the above-mentioned step P5.

Next, the first separation wafer W1 and the second separation wafer W2 are transferred to the cleaning devices 51 and 52 by the wafer transfer device 32, respectively. In the cleaning devices 51 and 52, the separation surfaces W1a and W2a are wiped and cleaned, respectively (step Q7 in FIG. 17). In addition, the cleaning method of the separation surfaces W1a and W2a is the same as the above-mentioned step P6.

Then, the first separation wafer W1 and the second separation wafer W2 are transferred to the wet etching devices 40 and 41 by the wafer transfer device 22, respectively. In the wet etching devices 40 and 41, the separation surfaces W1a and W2a are wet-etched, respectively (step Q8 in FIG. 17). In addition, the wet etching method of the separation surfaces W1a and W2a is the same as the above step P7.

After that, the first separated wafer W1 and the second separated wafer W2 that have been subjected to all the processes are transferred to the cassettes Cw1 and Cw2 of the cassette mounting table 10 by the wafer transfer device 22. In this way, a series of wafer processing of the wafer processing system 1 is completed.

This embodiment can also enjoy the same effects as the above-mentioned embodiment. Furthermore, according to the present embodiment, when performing edge rectification, in step Q2, after the peripheral modified layer M2 is formed inside the wafer W to be processed, the peripheral modified portion M2 is used as a base point, and the peripheral portion We is removed. For example, in the conventional method, grinding or cutting the peripheral portion We, the grindstone is worn and needs to be replaced regularly. On the other hand, in this embodiment, the laser head 90 itself is less deteriorated with time, and the frequency of maintenance can be reduced.

However, this disclosure does not exclude the entire edge of grinding.

In addition, the formation of the peripheral modified layer M2 in step Q1 and the formation of the internal surface modified layer M3 in step Q3 can be performed in the same reforming separation device 61. Therefore, the equipment cost can also be reduced. In addition, of course, the formation of the peripheral modified layer M2 and the formation of the inner surface modified layer M3 can also be performed on different devices. For example, when the above-mentioned wafer processing is continuously performed on a plurality of stacked wafers T, by forming the peripheral modified layer M2 and the inner surface modified layer M1 in different devices, the throughput of wafer processing can be increased .

In addition, in the above modification and separation device 61, the laser head 90 forms a peripheral modification layer M2 and an inner surface modification layer M3. The peripheral modification layer M2 and the inner surface modification layer M3 may also be different. The laser head is formed.

The method of performing edging in the wafer processing system 1 is not limited to the above embodiment. Next, the wafer processing in other embodiments will be described. This embodiment is substantially the same as the embodiment shown in FIG. 18, and the internal surface modification layer formed in step Q3 is different.

In step Q3, as shown in FIG. 20(c), an internal surface modification layer M4 is formed inside the wafer W to be processed. The inner surface modification layer M3 shown in FIG. 18 is formed to the peripheral modification layer M2. In contrast, the inner surface modification layer M4 of the present embodiment extends from the center to the outer end in the plane direction. In addition, the crack C4 progresses from the inner surface modification layer M4 to the surface direction. In addition, when the distance between the inner surface modification layers M4 is small, there is no crack C4.

At this time, in step Q4, as shown in FIG. 20(d), the second separated wafer W2 above the inner surface modification layer M4 is separated from the peripheral edge portion We below the inner surface modification layer M4. That is, the second separated wafer W2 is separated using the inner surface modified layer M4 as a base point, and the peripheral portion We is separated using the peripheral modified layer M2 as a base point. In addition, the other steps Q1~Q2, Q5~Q8 are the same as the embodiment shown in FIG.

In this embodiment, the same effect as the above-mentioned embodiment can also be enjoyed.

In the above embodiment, when the wafer processing system 1 performs edging, the peripheral edge portion We is removed when the wafer W to be processed is separated, or the wafer W to be processed may be separated after the peripheral edge We is removed.

At this time, in the reforming separation device 61, first, in step Q2, as shown in FIG. 21(b), a peripheral reforming layer M5 and a split reforming layer M6 are formed inside the wafer W to be processed.

As shown in FIG. 22, the laser head 90 is moved above the wafer W to be processed and at the boundary between the peripheral portion We and the central portion Wc of the wafer W to be processed. Thereafter, while the chuck 80 is rotated by the rotating portion 82, the laser light L is irradiated from the laser head 90 to the inside of the wafer W to be processed, and a peripheral modified layer M5 is formed inside the wafer W to be processed.

Similar to the peripheral modified layer M2 of the above embodiment, the peripheral modified layer M5 extends in the thickness direction, and the lower end of the peripheral modified layer M5 is located on the target surface of the polished wafer W to be processed (dotted line in FIG. 22) Above.

Furthermore, inside the wafer W to be processed, the crack C5 develops from the peripheral modified layer M5 and reaches the front surface Wa and the rear surface Wb. In addition, a plurality of peripheral modified layers M5 may be formed in the thickness direction.

Next, in the same reforming and separating device 61, the laser head 90 is moved to form a split reforming layer M6 inside the wafer W to be processed and radially outside the peripheral reforming layer M5. The split modified layer M6 also extends in the thickness direction in the same manner as the peripheral modified layer M5, and has a longitudinal aspect ratio. In addition, the crack C6 develops from the divided modified layer M6 and reaches the front surface Wa and the rear surface Wb. In addition, a plurality of division modification layers M6 may be formed in the thickness direction.

Furthermore, a plurality of split modified layers M6 and cracks C6 are formed at a distance of several μm in the radial direction, and as shown in FIG. 23, a row of split modified layers extending from the peripheral modified layer M5 to the radial outer side is formed M6. In addition, in the example shown in the figure, the divided modified layers M6 in a row extending in the radial direction are formed at eight locations, and the number of the divided modified layers M6 is arbitrary. As long as the split modified layer M6 is formed in at least two places, the peripheral portion We can be removed. At this time, when the peripheral edge portion We is removed from the entire edge, the peripheral edge portion We is separated into the plural by the ring-shaped peripheral modified layer M5 as the base point, and divided by the divided modified layer M6. In this way, the peripheral portion of the peripheral portion to be removed can be made into smaller pieces, which is easier to remove.

Next, in the same reforming separation device 61, as shown in FIG. 21(c), the peripheral edge portion We of the wafer W to be processed is removed using the peripheral reforming layer M5 as a base point. In the reforming and separating device 61 of this embodiment, the belt 150 shown in FIG. 24 is provided, and the peripheral portion We is removed by expanding (expanding) the belt 150.

First, as shown in FIG. 24(a), the expandable tape 150 is attached to the back surface Wb of the wafer W to be processed. Next, as shown in FIG. 24( b ), the tape 150 is expanded in the radial direction of the wafer W to be processed, and the peripheral edge portion We is separated from the wafer W to be processed using the peripheral modified layer M5 as a base point. At this time, the peripheral modified portion M6 is divided and separated using the divided modified layer M6 as a base point. Thereafter, as shown in FIG. 24(c), the tape 150 is lifted up and peeled from the wafer W to be processed, and the peripheral edge portion We is removed. In addition, at this time, in order to make the tape 150 easily peelable, a process of reducing the adhesive force of the tape 150, such as an ultraviolet irradiation process, may be performed.

In addition, the method of removing the peripheral edge portion We is not limited to this embodiment. For example, the peripheral edge portion We may be jetted or sprayed with water, and the peripheral edge portion We may be pushed and removed. Alternatively, a clamp such as tweezers may be brought into contact with the peripheral edge portion We, and the peripheral edge portion We may be physically removed.

Next, in the same reforming separation device 61, an internal surface reforming layer M7 is formed as shown in FIG. 21(d) in step Q3, and further processed in step Q4 as shown in FIG. 21(e) The wafer W is separated into separated wafers W1 and W2.

Then, in the inverting device 60, in step Q5, the front and back surfaces of the second separated wafer W2 are inverted. After that, as shown in FIGS. 21(f) and 21(g), the processing device 70 grinds the separation surfaces W1a and W2a as shown in FIGS. 21(f) and 21(g). Subsequently, step Q7 is performed on the cleaning devices 51 and 52, and step Q8 is performed on the wet etching devices 40 and 41. In this way, a series of wafer processing of the wafer processing system 1 is completed.

In this embodiment, the same effect as the above-mentioned embodiment can also be enjoyed. Furthermore, according to the present embodiment, since the division modification layer M6 is formed in step Q2, the peripheral edge portion We to be removed can be made small. Therefore, it is easier to perform the edging.

In the wafer processing systems 1, 200, and 300 of the above embodiments, the bonding of the processed wafer W and the support wafer S is performed by a bonding apparatus external to the wafer processing systems 1, 200, and 300. This bonding apparatus may also be used. Inside the wafer processing system 1, 200, 300.

In addition, when bonding the wafer W to be processed and the supporting wafer S, when the oxide films Fw and Fs in the peripheral portion We are also bonded, the oxide films Fw and Fs may be pre-processed before the bonding process. The pretreatment may remove the surface layer of the oxide film Fw of the peripheral edge portion We, or may make the oxide film Fw protrude, for example. Or, the surface of the oxide film Fw may be destroyed and roughened. By performing such pre-treatment, it is possible to suppress the bonding of the oxide films Fw and Fs at the peripheral edge portion We, and the peripheral edge portion We can be appropriately removed.

In the above embodiment, the case where the processed wafer W and the support wafer S are directly bonded has been described. The processed wafer W and the support wafer S may also be bonded by an adhesive.

In addition, in the above embodiment, the case where the wafer W to be processed of the stacked wafer T is thinned has been described, and the above embodiment can also be applied when one wafer is thinned. Moreover, when peeling the laminated wafer T into the wafer W to be processed and the support wafer S, the above-described embodiment can also be applied.

All points of the embodiment disclosed this time should be regarded as an example rather than a limitation. The above embodiments can be omitted, replaced, or modified in various forms without departing from the scope of the attached patent application and its gist.

1: Wafer processing system 2: move in and out of the station 3: processing station 10: crystal box mounting table 20: Wafer transfer area 21: Transport path 22: Wafer transfer device 23: Transport arm 30: Wafer transfer area 31: Transport path 32: Wafer transfer device 33: Transport arm 34: arm member 40: Wet etching device 41: Wet etching device 50: Calibration device 51: Cleaning device 52: Cleaning device 60: Flip device 61: Modification and separation device 70: processing device 80: suction cup 81: Mobile Department 82: Rotating part 90: laser head 91: Mobile Department 92: Lifting Department 100: adsorption pad 101: Rotating Department 102: Lifting Department 110: Rotating table 111: rotation centerline 112: suction cup 120: 1st grinding unit 121: The first polishing section 122: Pillar 130: Second grinding unit 131: Second polishing section 132: Pillar 140: control device 150: belt 200: Wafer processing system 201: Separation and overturning device 202: Modification device 300: Wafer processing system 301: Modification device 302: Separate flip unit 303: Separation mechanism 304: Flip mechanism 310: adsorption pad 311: Rotating part 312: Lifting Department 320: Holding Department 321: Rotating part 322: Lifting Department 400: transport arm 401: Adsorption pad 402: Adsorption pad A1: 1st transfer position A2: 2nd transfer position B1: 1st processing position B2: 2nd processing position Ct: crystal box Cw1: crystal box Cw2: crystal box C1: Crack C2: Crack C3: Crack C4: Crack C5: Crack C6: Crack D: component layer Fs: oxide film Fw: oxide film G1: the first processing block G2: 2nd processing block G3: 3rd processing block H: memory media H1: distance H2: target thickness H3: distance L: Laser light M1: internal modification layer M2: Peripheral modification layer M3: internal surface modification layer M4: internal modification layer M5: Peripheral modification layer M6: Split modification layer M7: internal modification layer P1: Step P2: Step P3: Step P4: Step P5: Step P6: Step P7: Step Q1: Step Q2: Step Q3: Step Q4: Step Q5: Step Q6: Step Q7: Step Q8: Step S: Support wafer Sa: surface Sb: back T: stacked wafer W: Wafer being processed Wa: surface Wb: back Wc: Central Department We: Peripheral Department W1: 1st separated wafer W1a: separation surface W2: 2nd separated wafer W2a: separation surface X: direction Y: direction Z: direction

FIG. 1 is a schematic plan view schematically showing the structure of a wafer processing system of this embodiment. FIG. 2 is a schematic side view showing the structure of a stacked wafer. FIG. 3 is a schematic side view showing the structure of a part of the stacked wafer. 4 is a schematic side view showing the structure of the reforming and separating device. FIG. 5 is a flowchart showing the main processes of wafer processing in this embodiment. 6(a) to (e) are explanatory diagrams of the main processes of wafer processing in this embodiment. FIG. 7 is a longitudinal cross-sectional view showing how the modified separation device forms a modified layer on the inner surface of a wafer to be processed. FIG. 8 is a plan view showing how the modified separation device forms an inner surface modified layer on a wafer to be processed. 9(a) to (b) are explanatory diagrams showing a state where a processed wafer is separated by a modification separation device. 10(a) to (b) are explanatory diagrams showing a state where the processing device grinds and separates the separation surface of the wafer. FIG. 11 is an explanatory diagram showing a state in which the separation surface of the separation wafer is ground by the processing device. 12 is a schematic plan view schematically showing the structure of a wafer processing system according to another embodiment. 13 is a schematic plan view schematically showing the structure of a wafer processing system according to another embodiment. 14 is a schematic side view showing the structure of the separation and inversion unit. 15 is a schematic side view showing the structure of the transfer arm of the wafer transfer device. 16 is a schematic side view showing the structure of the transfer arm of the wafer transfer device. FIG. 17 is a flowchart showing the main processes of wafer processing in another embodiment. 18(a) to (f) are explanatory diagrams of main processes of wafer processing in another embodiment. FIG. 19 is an explanatory diagram showing the formation of a peripheral modified layer on a wafer to be processed in another embodiment. 20(a) to (f) are explanatory diagrams of main processes of wafer processing in another embodiment. 21(a) to (g) are explanatory views of main processes of wafer processing in another embodiment. FIG. 22 is an explanatory diagram showing the formation of a peripheral modified layer and a divided modified layer on a wafer to be processed in another embodiment. FIG. 23 is an explanatory diagram showing the formation of a peripheral modified layer and a divided modified layer on a wafer to be processed in another embodiment. 24(a) to (c) are explanatory diagrams showing a state in which the peripheral portion of the wafer to be processed is removed in another embodiment.

1: Wafer processing system

2: move in and out of the station

3: processing station

10: crystal box mounting table

20: Wafer transfer area

21: Transport path

22: Wafer transfer device

23: Transport arm

30: Wafer transfer area

31: Transport path

32: Wafer transfer device

33: Transport arm

34: arm member

40: Wet etching device

41: Wet etching device

50: Calibration device

51: Cleaning device

52: Cleaning device

60: Flip device

61: Modification and separation device

70: processing device

110: Rotating table

111: rotation centerline

112: suction cup

120: 1st grinding unit

121: The first polishing section

122: Pillar

130: Second grinding unit

131: Second polishing section

132: Pillar

140: control device

A1: 1st transfer position

A2: 2nd transfer position

B1: 1st processing position

B2: 2nd processing position

Ct: crystal box

Cw1: crystal box

Cw2: crystal box

G1: the first processing block

G2: 2nd processing block

G3: 3rd processing block

H: memory media

T: stacked wafer

W1: 1st separated wafer

W2: 2nd separated wafer

X: direction

Y: direction

Z: direction

Claims (14)

A substrate processing system for processing substrates, including: The separating section separates the substrate into a first separating substrate and a second separating substrate with the internal surface modification layer formed in the surface direction of the substrate as a starting point; The processing section respectively grinds the separation surface of the first separation substrate and the separation surface of the second separation substrate; A transport mechanism that transports the substrate at least to the separation part or the processing part; and The inversion mechanism inverts the front and back surfaces of the second separated substrate. For example, the substrate processing system of the first patent application, in which The transport mechanism transports the first separation substrate and the second separation substrate to at least the separation portion or the processing portion. For example, the substrate processing system of patent application item 1 or item 2, wherein, The processing department has: A turntable that rotates freely and includes a plurality of holding portions that hold the substrate, the first separated substrate, or the second separated substrate; The first polishing section polishes the separation surface of the first separation substrate held in the holding section; and The second polishing section polishes the separation surface of the second separation substrate held in the holding section. For example, the substrate processing system of claim 3, in which The separating portion is provided above the rotating table and is used to separate the substrate held by the holding portion. For example, the substrate processing system of claim 4 of the patent scope, in which The separating part has the turning mechanism. For example, the substrate processing system according to any one of the first to fifth patent applications, wherein, The reversing mechanism is provided in the conveying mechanism. If the substrate processing system of any one of the items 1 to 5 of the patent application scope further includes: The internal surface modifying portion irradiates the inside of the substrate with laser light to form the internal surface modifying layer. For example, the substrate processing system of any one of patent application items 1 to 7 includes: The peripheral modified portion irradiates laser light in the thickness direction along the boundary between the peripheral portion and the central portion of the substrate to be removed to form a peripheral modified layer. A substrate processing method for processing a substrate includes the following steps: In the separation part, the internal surface modification layer formed in the surface direction of the substrate is used as a starting point to separate the substrate into a first separation substrate and a second separation substrate; Flip the surface and back of the second separated substrate with a flip mechanism; In the processing section, the separation surface of the first separation substrate and the separation surface of the second separation substrate are polished separately. For example, the substrate processing method of item 9 of the patent application scope, in which The processing department has: A rotating table, which is freely rotatable and has a plurality of holding portions that hold the substrate, the first separated substrate, or the second separated substrate; The first polishing section polishes the separation surface of the first separation substrate held in the holding section; and The second polishing section polishes the separation surface of the second separation substrate held in the holding section; The polishing of the separation surface of the first separation substrate by the first polishing portion and the polishing of the separation surface of the second separation substrate by the second polishing portion are performed simultaneously. For example, the substrate processing method of claim 10, in which The separating portion is provided above the rotating table, and separates the substrate held by the holding portion. For example, the substrate processing method of any one of the patent application items 9 to 11, wherein, When conveying the second separation substrate separated by the separation portion, the front and back surfaces of the second separation substrate are inverted by the inversion mechanism. For example, the substrate processing method according to any one of the patent application items 9 to 12, wherein, Before the substrate is separated by the separation portion, the inside of the substrate is irradiated with laser light to form the inner surface modification layer. For example, the substrate processing method according to any one of the patent application items 9 to 13, wherein, Before the substrate is separated by the separation part, laser light is irradiated in the thickness direction along the boundary between the peripheral edge part and the central part of the removal target inside the substrate to form a peripheral modified layer.

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