JPWO2020066492A1 - Board processing system and board processing method - Google Patents

Abstract

A substrate processing system for processing a substrate, wherein the substrate is separated into a first separation substrate and a second separation substrate starting from an internal surface modification layer formed in the surface direction inside the substrate. A processing portion for grinding the separation surface of the first separation substrate and the separation surface of the second separation substrate, a transport mechanism for transporting the substrate to at least the separation portion or the processing portion, and the above. It has an inversion mechanism that inverts the front and back surfaces of the second separation substrate.

Description

The present disclosure relates to a substrate processing system and a substrate processing method.

Patent Document 1 discloses a method for processing a wafer in which a plurality of devices are formed on the front surface side. In this processing method, after irradiating a laser beam between the front surface side and the back surface side of the wafer to form an altered layer, the back surface side wafer on the back surface side of the altered layer and the front surface side wafer on the front surface side of the altered layer are formed. Separate into and. In addition, the backside wafer is recycled.

Japanese Unexamined Patent Publication No. 2010-21398

The technique according to the present disclosure efficiently performs such separation and regeneration when the substrate is separated and thinned, and the separated substrate is reused.

One aspect of the present disclosure is a substrate processing system for processing a substrate, in which the substrate is separated from a first separation substrate and a second separation substrate starting from an internal surface modification layer formed in the surface direction inside the substrate. The substrate is attached to at least the separation portion or the processing portion for grinding the separation portion for separating into the substrate, the separation surface for the first separation substrate and the separation surface for the second separation substrate, respectively. It has a transport mechanism for transporting and a reversing mechanism for reversing the front and back surfaces of the second separation substrate.

According to the present disclosure, when the substrate is separated and thinned, and the separated substrate is reused, such separation and regeneration can be efficiently performed.

It is a top view which shows the outline of the structure of the wafer processing system which concerns on this embodiment schematically. It is a side view which shows the outline of the structure of the polymerization wafer. It is a side view which shows the outline of the structure of a part of a polymerization wafer. It is a side view which shows the outline of the structure of the reforming separation apparatus. It is a flow chart which shows the main process of the wafer processing which concerns on this Embodiment. It is explanatory drawing of the main process of the wafer processing which concerns on this embodiment. It is a vertical cross-sectional view which shows the state of forming the internal surface modification layer on the processing wafer in the modification separation apparatus. It is a top view which shows the state of forming the internal surface modification layer on the processing wafer in the modification separation apparatus. It is explanatory drawing which shows the state of separating the processing wafer in the reforming separation apparatus. It is explanatory drawing which shows the state of grinding the separation surface of the separation wafer in a processing apparatus. It is explanatory drawing which shows the state of grinding the separation surface of the separation wafer in a processing apparatus. It is a top view which shows the outline of the structure of the wafer processing system which concerns on another embodiment schematically. It is a top view which shows the outline of the structure of the wafer processing system which concerns on another embodiment schematically. It is a side view which shows the outline of the structure of the separation inversion unit. It is a side view which shows the outline of the structure of the transfer arm of a wafer transfer device. It is a side view which shows the outline of the structure of the transfer arm of a wafer transfer device. It is a flow chart which shows the main process of the wafer processing which concerns on other embodiment. It is explanatory drawing of the main process of the wafer processing which concerns on other embodiment. It is explanatory drawing which shows the appearance of forming the peripheral modification layer on the processing wafer in another embodiment. It is explanatory drawing of the main process of the wafer processing which concerns on other embodiment. It is explanatory drawing of the main process of the wafer processing which concerns on other embodiment. It is explanatory drawing which shows the mode that the peripheral modification layer and the division modification layer are formed on the processed wafer in another embodiment. It is explanatory drawing which shows the mode that the peripheral modification layer and the division modification layer are formed on the processed wafer in another embodiment. It is explanatory drawing which shows the state of removing the peripheral part of the processing wafer in another embodiment.

In the process of manufacturing a semiconductor device, the wafer is thinned with respect to a semiconductor wafer (hereinafter referred to as a wafer) in which a plurality of devices are formed on the surface. There are various methods for thinning the wafer, such as a method of grinding the back surface of the wafer and a method of separating the wafer as disclosed in Patent Document 1. In particular, in the method disclosed in Patent Document 1, the davas constituting the separated front surface side wafer can be commercialized, and the back surface side wafer can be recycled.

Here, the altered layer (modified layer) remains on the surface of the separated back surface side wafer, and cannot be recycled (reused) as it is. However, Patent Document 1 does not disclose or suggest how to treat the modified layer of the back surface side wafer. Furthermore, no consideration is given to a method for efficiently reusing the backside wafer. Therefore, there is room for improvement in the conventional wafer processing when separating and thinning the wafer and reusing the separated wafer.

The technique according to the present disclosure efficiently separates wafers and reuses the separated wafers. Hereinafter, the wafer processing system as the substrate processing system and the wafer processing method as the substrate processing method according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, so that duplicate description will be omitted.

First, the configuration of the wafer processing system according to the present embodiment will be described. FIG. 1 is a plan view schematically showing an outline of the configuration of the wafer processing system 1.

In the wafer processing system 1, as shown in FIGS. 2 and 3, a desired process is performed on the polymerized wafer T in which the processed wafer W as a substrate and the support wafer S are joined, and the processed wafer W is separated and thinned. To be. Hereinafter, in the processed wafer W, the surface bonded to the support wafer S is referred to as a front surface Wa, and the surface opposite to the front surface Wa is referred to as a back surface Wb. Similarly, in the support wafer S, the surface bonded to the processed wafer W is referred to as a front surface Sa, and the surface opposite to the front surface Sa is referred to as a back surface Sb.

The processed wafer W is a semiconductor wafer such as a silicon wafer, and a device layer D including a plurality of devices is formed on the surface Wa. Further, an oxide film Fw, for example, a SiO ₂ film (TEOS film) is further formed on the device layer D. The peripheral edge of the processed wafer W is chamfered, and the cross section of the peripheral edge becomes thinner toward the tip thereof.

The support wafer S is a wafer that supports the processed wafer W, and is, for example, a silicon wafer. An oxide film Fs, for example, a SiO ₂ film (TEOS film) is formed on the surface Sa of the support wafer S. Further, the support wafer S functions as a protective material for protecting the device on the surface Wa of the processing wafer W. When a plurality of devices on the surface Sa of the support wafer S are formed, a device layer (not shown) is formed on the surface Sa in the same manner as the processing wafer W.

In FIG. 2, the device layer D and the oxide films Fw and Fs are not shown in order to avoid the complexity of the drawing. Similarly, in other drawings used in the following description, the illustration of the device layer D and the oxide films Fw and Fs may be omitted.

Further, in the wafer processing system 1 of the present embodiment, the processing wafer W in the polymerization wafer T is separated. In the following description, the separated front surface Wa side processing wafer W is referred to as the first separation wafer W1 as the first separation substrate, and the separated back surface Wb side processing wafer W is referred to as the second separation substrate. The second separation wafer W2 of the above. The first separation wafer W1 has a device layer D and is commercialized. The second separation wafer W2 is reused. The first separation wafer W1 refers to the processing wafer W in a state of being supported by the support wafer S, and may be referred to as the first separation wafer W1 including the support wafer S. Further, the surface separated on the first separation wafer W1 is referred to as a separation surface W1a, and the surface separated on the second separation wafer W2 is referred to as a separation surface W2a.

As shown in FIG. 1, the wafer processing system 1 has a configuration in which the loading / unloading station 2 and the processing station 3 are integrally connected. The loading / unloading station 2 and the processing station 3 are arranged side by side from the positive direction side to the negative direction side of the X axis. In the carry-in / out station 2, for example, cassettes Ct, Cw1 and Cw2 capable of accommodating a plurality of polymerization wafers T, a plurality of first separation wafers W1 and a plurality of second separation wafers W2 are carried in / out from the outside. Is done. The processing station 3 includes various processing devices that perform desired processing on the polymerization wafer T, the separation wafers W1 and W2.

The loading / unloading station 2 is provided with a cassette mounting table 10. In the illustrated example, a plurality of, for example, three cassettes Ct, Cw1 and Cw2 can be freely mounted in a row on the cassette mounting table 10 in the Y-axis direction. The number of cassettes Ct, Cw1 and Cw2 mounted on the cassette mounting table 10 is not limited to this embodiment and can be arbitrarily determined.

The loading / unloading station 2 is provided with a wafer transfer region 20 adjacent to the cassette mounting table 10 on the X-axis negative direction side of the cassette mounting table 10. The wafer transfer region 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the Y-axis direction. The wafer transfer device 22 has two transfer arms 23, 23 that hold and transfer the polymerized wafer T and the separated wafers W1 and W2. Each transport arm 23 is configured to be movable in the horizontal direction (X-axis direction and Y-axis direction), vertical direction, around the horizontal axis, and around the vertical axis. The configuration of the transport arm 23 is not limited to this embodiment, and any configuration can be adopted.

The processing station 3 is provided with, for example, three processing blocks G1 to G3 and a wafer transfer region 30. The first processing block G1, the second processing block G2, and the third processing block G3 are arranged side by side in this order from the negative direction side of the X axis (the loading / unloading station 2 side) to the positive direction side. The first processing block G1 is arranged on the X-axis positive direction side of the wafer transfer area 30, and the second processing block G2 and the third processing block G3 are arranged on the Y-axis positive direction side of the wafer transfer area 30, respectively. There is.

The wafer transfer region 30 is provided with a wafer transfer device 32 that functions as a transfer mechanism and is movable on a transfer path 31 extending in the X-axis direction. The wafer transfer device 32 is configured to be able to transfer the polymerization wafer T, the separation wafers W1 and W2 to each of the processing devices of the processing blocks G1 to G3. Further, the wafer transfer device 32 has two transfer arms 33 and 33 that hold and transfer the polymerized wafer T and the separated wafers W1 and W2. As an example, the first transfer arm 33 holds the polymerization wafer T and the separation wafers W1 and W2 from below, and the second transfer arm 33 holds the polymerization wafer T and the separation wafers W1 and W2 from above. Each transport arm 33 is supported by an articulated arm member 34 and is configured to be movable in the horizontal direction, the vertical direction, the horizontal axis, and the vertical axis. The configuration of the transport arm 33 is not limited to this embodiment, and any configuration can be adopted.

The first processing block G1 is provided with two wet etching devices 40 and 41, an alignment device 50, and two cleaning devices 51 and 52. The wet etching devices 40 and 41 are stacked and arranged in this order from above on the Y-axis positive direction side. The alignment device 50 and the two cleaning devices 51 and 52 are stacked and arranged in this order from above on the negative direction side of the Y axis.

The reversing device 60 and the reforming separation device 61 are laminated in this order from above in the second processing block G2. The reversing device 60 constitutes the reversing mechanism of the present disclosure. Further, the reforming and separating device 61 is configured to serve as both the separating portion and the internal surface reforming portion of the present disclosure.

The third processing block G3 is provided with a processing device 70 as a processing unit. The number and arrangement of the processing devices 70 are not limited to this embodiment, and a plurality of processing devices 70 may be arbitrarily arranged. Further, when a plurality of processing devices 70 are provided, a plurality of wafer transfer devices 32 may be provided in the wafer transfer area 30.

The wet etching apparatus 40 and 41 etch the separation surfaces W1a and W2a of the separation wafers W1 and W2 ground by the processing apparatus 70, respectively. For example, a chemical solution (etching solution) is supplied to the separation surfaces W1a and W2a of the separation wafers W1 and W2, respectively. As the chemical solution, for example, HF, HNO ₃ , H ₃ PO ₄ , TMAH, Choline, KOH and the like are used.

The alignment device 50 adjusts the horizontal orientation of the polymerized wafer T before processing. For example, while rotating the polymerized wafer T held by the chuck (not shown), the position of the notch portion of the processed wafer W is detected by the detection unit (not shown) to adjust the position of the notch portion. Adjust the horizontal orientation of the polymerization wafer T.

The cleaning devices 51 and 52 clean the separation surfaces W1a and W2a of the separation wafers W1 and W2 ground by the processing device 70, respectively. For example, the brush is brought into contact with the separation surfaces W1a and W2a, and the separation surfaces W1a and W2a are scrubbed and washed. A pressurized cleaning liquid may be used for cleaning the separation surfaces W1a and W2a.

The reversing device 60 reverses the front and back surfaces of the second separation wafer W2 separated by the reforming separation device 61. The configuration of the reversing device 60 is arbitrary.

The modification separation device 61 irradiates the inside of the processing wafer W with a laser beam to form an internal surface modification layer, which will be described later, and further uses the internal surface modification layer as a starting point to separate the processing wafer W into a first separation wafer. It is separated into W1 and a second separation wafer W2.

As shown in FIG. 4, the reforming separation device 61 has a chuck 80 for holding the polymerization wafer T in a state where the processing wafer W is on the upper side and the support wafer S is arranged on the lower side. The chuck 80 is configured to be movable in the X-axis direction and the Y-axis direction by the moving portion 81. The moving unit 81 is composed of a general precision XY stage. Further, the chuck 80 is configured to be rotatable around a vertical axis by a rotating portion 82.

Above the chuck 80, a laser head 90 is provided as an internal surface modification portion that irradiates the inside of the processed wafer W with a laser beam. The laser head 90 is a high-frequency pulsed laser beam oscillated from a laser beam oscillator (not shown), and emits a laser beam having a wavelength that is transparent to the processing wafer W inside the processing wafer W. Condensate and irradiate at a desired position. As a result, the portion where the laser beam is focused is modified inside the processed wafer W, and an internal surface modification layer is formed. Further, the laser head 90 simultaneously irradiates the laser beam from the laser beam oscillator into a plurality of laser beams, for example, by a lens or the like. In such a case, a plurality of laser beams are irradiated from the laser head 90, and a plurality of internal surface modification layers are simultaneously formed inside the processing wafer W. The laser head 90 is configured to be movable in the X-axis direction and the Y-axis direction by the moving unit 91. The moving unit 91 is composed of a general precision XY stage. Further, the laser head 90 is configured to be movable in the Z-axis direction by the elevating portion 92.

Further, above the chuck 80, a suction pad 100 that sucks and holds the back surface Wb of the processed wafer W is provided. The suction pad 100 is configured to be rotatable around a vertical axis by a rotating portion 101. Further, the suction pad 100 is configured to be movable in the Z-axis direction by the elevating portion 102.

As shown in FIG. 1, the processing apparatus 70 grinds the separation surface W1a of the first separation wafer W1 and the separation surface W2a of the second separation wafer W2, respectively. The processing apparatus 70 has a rotary table 110, a first grinding unit 120, and a second grinding unit 130.

The rotary table 110 is rotatably configured around a vertical rotation center line 111 by a rotation mechanism (not shown). On the rotary table 110, four chucks 112 as holding portions for sucking and holding the separated wafers W1 and W2 are provided. The chucks 112 are arranged evenly on the same circumference as the rotary table 110, that is, every 90 degrees. The four chucks 112 can be moved to the delivery positions A1 and A2 and the processing positions B1 and B2 by rotating the rotary table 110. The chuck 112 is held by a chuck base (not shown) and is rotatably configured by a rotating mechanism (not shown).

In the present embodiment, the first delivery position A1 is a position on the X-axis negative direction side and the Y-axis negative direction side of the rotary table 110, and the first separation wafer W1 is delivered. The second delivery position A2 is a position on the X-axis positive direction side and the Y-axis negative direction side of the rotary table 110, and the second separation wafer W2 is delivered. The first machining position B1 is a position on the X-axis positive direction side and the Y-axis positive direction side of the rotary table 110, and the first grinding unit 120 is arranged. The second machining position B2 is a position on the X-axis negative direction side and the Y-axis positive direction side of the rotary table 110, and the second grinding unit 130 is arranged.

The first grinding unit 120 grinds the separation surface W1a of the first separation wafer W1. The first grinding unit 120 has a first grinding unit 121 having an annular shape and a rotatable grinding wheel (not shown). Further, the first grinding portion 121 is configured to be movable in the vertical direction along the support column 122. Then, in a state where the separation surface W1a of the first separation wafer W1 held by the chuck 112 is in contact with the grinding wheel, the chuck 112 and the grinding wheel are each rotated, and the grinding wheel is further lowered to obtain the first. The separation surface W1a of the separation wafer W1 is ground. As a result, the internal surface modification layer remaining on the separation surface W1a of the first separation wafer W1 is removed.

The second grinding unit 130 grinds the separation surface W2a of the second separation wafer W2. The second grinding unit 130 has a second grinding unit 131 having an annular shape and a rotatable grinding wheel (not shown). Further, the second grinding portion 131 is configured to be movable in the vertical direction along the support column 132. Then, in a state where the separation surface W2a of the second separation wafer W2 held by the chuck 112 is in contact with the grinding wheel, the chuck 112 and the grinding wheel are each rotated, and the grinding wheel is further lowered to obtain a second. The separation surface W2a of the separation wafer W2 is ground. As a result, the internal surface modification layer remaining on the separation surface W2a of the second separation wafer W2 is removed.

The wafer processing system 1 described above is provided with a control device 140. The control device 140 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program that controls the processing of the polymerized wafer T in the wafer processing system 1. Further, the program storage unit also stores a program for controlling the operation of the drive system of the above-mentioned various processing devices and transfer devices to realize the substrate processing described later in the wafer processing system 1. The program may be recorded on a computer-readable storage medium H and may be installed on the control device 140 from the storage medium H.

Next, the wafer processing performed by using the wafer processing system 1 configured as described above will be described. FIG. 5 is a flow chart showing a main process of wafer processing. In the present embodiment, in the external bonding device (not shown) of the wafer processing system 1, the processed wafer W and the supporting wafer S are bonded by van der Waals force and hydrogen bond (intermolecular force), and the laminated wafer is preliminarily polymerized. T is formed.

First, the cassette Ct containing a plurality of the polymerization wafers T shown in FIG. 6A is placed on the cassette mounting table 10 of the loading / unloading station 2.

Next, the wafer transfer device 22 takes out the polymerized wafer T in the cassette Ct and transfers it to the alignment device 50. In the alignment device 50, the horizontal orientation of the polymerization wafer T (processed wafer W) is adjusted (step P1 in FIG. 5).

Next, the polymerized wafer T is transferred to the reforming and separating device 61 by the wafer transfer device 32. In the modification / separation device 61, the internal surface modification layer M1 is formed inside the processed wafer W as shown in FIG. 6 (b) (step P2 in FIG. 5).

As shown in FIG. 7, the laser beam L is irradiated from the laser head 90 to the inside of the processed wafer W to form the internal surface modification layer M1. The internal surface modification layer M1 extends in the surface direction and has a horizontally long aspect ratio. The lower end of the internal surface modification layer M1 is located slightly above the target surface (dotted line in FIG. 7) of the processed wafer W after grinding. That is, the distance H1 between the lower end of the internal surface modification layer M1 and the surface Wa of the processed wafer W is slightly larger than the target thickness H2 of the processed wafer W after grinding. The internal surface modification layer M1 has a vertically long aspect ratio, and the plurality of internal surface modification layers M1 may be arranged with a small pitch. Further, the crack C1 grows in the plane direction from the internal surface modification layer M1. Further, when the pitch of the internal surface modification layer M1 is small, the crack C1 may not be present.

Then, as shown in FIGS. 7 and 8, the laser head 90 and the polymerization wafer T are relatively moved in the horizontal direction to form a plurality of internal surface modification layers M1 inside the processing wafer W. Specifically, first, the laser head 90 is moved in the X-axis direction to form a row of internal surface modification layers M1. After that, the laser head 90 is shifted in the Y-axis direction, and the laser head 90 is further moved in the X-axis direction to form a separate row of internal surface modification layers M1. These plurality of internal surface modification layers M1 are formed at the same height. Then, the internal surface modification layer M1 is formed on the entire internal surface of the processed wafer W.

In the modified separation device 61, a plurality of laser beams L may be simultaneously irradiated from the laser head 90. In such a case, the internal surface modification layer M1 can be formed in a shorter time, and the throughput of wafer processing can be improved. Further, in the reforming separation device 61, the laser head 90 may be moved in the horizontal direction while rotating the chuck 80. In such a case, the internal surface modification layer M1 is formed in a spiral shape in a plan view. Then, the pitches of the plurality of internal surface reforming layers M1 may be changed in the concentric circular direction and the radial direction of the processed wafer W.

Next, in the same reforming and separating apparatus 61, the processed wafer W is separated into the first separation wafer W1 and the second separation wafer W2 with the internal surface reforming layer M1 as a base point as shown in FIG. 6C. (Step P3 in FIG. 5).

As shown in FIG. 9A, the back surface Wb of the processed wafer W is suction-held by the suction pad 100. Then, the suction pad 100 is rotated to cut off the first separation wafer W1 and the second separation wafer W2 with the internal surface modification layer M1 as a boundary. After that, as shown in FIG. 9B, in a state where the suction pad 100 sucks and holds the second separation wafer W2, the suction pad 100 is raised to lower the first separation wafer W1 to the second separation wafer W2. To separate. The internal surface modification layer M1 remains on the separation surface W1a of the first separation wafer W1 and the separation surface W2a of the second separation wafer W2, respectively.

The method for separating the processed wafer W is not limited to this embodiment. When the second separation wafer W2 can be separated only by raising the suction pad 100 as shown in FIG. 9B, the rotation of the suction pad 100 shown in FIG. 9B may be omitted. Further, for example, a tape (not shown) may be used instead of the suction pad 100, and the processed wafer W may be held and separated by the tape. Further, before the treated wafer W is sucked and held by the suction pad 100, ultrasonic waves may be applied to at least the inner surface modified layer M1 of the treated wafer W, or the inner surface modified layer M1 may be heated. May be good. In such a case, the processed wafer W can be easily separated from the internal surface modification layer M1 as a base point.

Next, the second separated wafer W2 is transferred to the reversing device 60 by the wafer transfer device 32. In the reversing device 60, the front and back surfaces of the second separation wafer W2 are reversed (step P4 in FIG. 5). After that, the second separated wafer W2 is transferred to the processing device 70 by the wafer transfer device 32, and is delivered to the chuck 112 at the second delivery position A2 as shown in FIG. 10A.

In parallel with this step P4, the first separated wafer W1 is conveyed to the processing apparatus 70 by the wafer transfer apparatus 32, and is delivered to the chuck 112 at the first delivery position A1 as shown in FIG. 10A.

Next, as shown in FIG. 10B, the rotary table 110 is rotated 180 ° counterclockwise to move the first separation wafer W1 to the first processing position B1, and the second separation wafer W2 is moved. It is moved to the second processing position B2.

Next, at the first processing position B1, the separation surface W1a of the first separation wafer W1 is ground as shown in FIG. 6D, and the internal surface modification layer M1 remaining on the separation surface W1a is removed. At the same time, at the second processing position B2, as shown in FIG. 6E, the separation surface W2a of the second separation wafer W2 is ground to remove the internal surface modification layer M1 remaining on the separation surface W2a (FIG. Step P5 of step 5.

Next, the rotary table 110 is rotated 180 ° counterclockwise to move the state shown in FIG. 10A, that is, the first separation wafer W1 to the first delivery position A1, and the second separation wafer. W2 is moved to the second delivery position A2. At the first delivery position A1, the separation surface W1a of the first separation wafer W1 may be cleaned with the cleaning liquid using a cleaning liquid nozzle (not shown). Further, even at the second delivery position A2, the separation surface W2a of the second separation wafer W2 may be cleaned with the cleaning liquid using a cleaning liquid nozzle (not shown).

Next, the first separated wafer W1 is conveyed to the cleaning device 51 by the wafer transfer device 32, and the second separated wafer W2 is transferred to the cleaning device 52 by the wafer transfer device 32. In the cleaning device 51, the separation surface W1a of the first separation wafer W1 is scrubbed, and in the cleaning device 52, the separation surface W2a of the second separation wafer W2 is scrubbed (step P6 in FIG. 5).

Next, the first separated wafer W1 is transported to the wet etching device 40 by the wafer transfer device 22, and the second separated wafer W2 is transferred to the wet etching device 41 by the wafer transfer device 22. In the wet etching apparatus 40, the separation surface W1a of the first separation wafer W1 is wet-etched by the chemical solution, and in the wet etching apparatus 41, the separation surface W2a of the second separation wafer W2 is wet-etched by the chemical solution (step P7 in FIG. 5). Grinding marks may be formed on the separation surfaces W1a and W2a ground by the processing device 70 described above, respectively. In this step P7, grinding marks can be removed by wet etching, and the separation surfaces W1a and W2a can be smoothed.

After that, the first separation wafer W1 and the second separation wafer W2 that have been subjected to all the processing are transferred to the cassettes Cw1 and Cw2 of the cassette mounting table 10 by the wafer transfer device 22, respectively. In this way, a series of wafer processing in the wafer processing system 1 is completed.

According to the above embodiment, steps P1 to P7 can be performed to separate the processed wafers W, and the separated surfaces W1a and W2a of the separated wafers W1 and W2 can be appropriately processed by grinding, wet etching or the like, respectively. Therefore, the first separation wafer W1 having the device layer D can be commercialized, and the second separation wafer W2 can be reused. Moreover, since these steps P1 to P7 are performed by one wafer processing system 1, the wafer processing can be efficiently performed.

Further, since the processing apparatus 70 of the present embodiment has the rotary table 110, the first grinding unit 120, and the second grinding unit 130, the grinding of the separation surface W1a of the first separation wafer W1 in step P5. And the grinding of the separation surface W2a of the second separation wafer W2 can be performed in parallel. Therefore, the throughput of wafer processing can be improved.

The processing apparatus 70 of the present embodiment is provided with delivery positions A1 and A2 and processing positions B1 and B2 corresponding to the four chucks 112 of the rotary table 110. Then, for example, as shown in FIG. 11, grinding of the separation surface W1a at the first processing position B1 and delivery of the first separation wafer W1 at the first delivery position A1 can be performed in parallel. Similarly, grinding of the separation surface W2a at the second processing position B2 and delivery of the second separation wafer W2 at the second delivery position A2 can be performed in parallel. Therefore, the throughput of wafer processing can be improved.

Further, since the processing apparatus 70 of the present embodiment is provided with delivery positions A1 and A2 and processing positions B1 and B2, for example, when two rotary tables provided with one delivery position and one processing position are used. Compared to, the number of turntables used is small. As a result, the occupied area (footprint) of the processing apparatus 70 can be reduced, and the occupied area of the wafer processing system 1 can also be reduced.

Further, in the present embodiment, when the processed wafer W is thinned, the internal surface modified layer M1 is formed inside the processed wafer W in step P2, and then the processed wafer is formed in step P3 with the internal surface modified layer M1 as a base point. W is separated. For example, when the back surface Wb of the processed wafer W is ground and thinned as in the conventional case, the grinding wheel is worn and grinding water is used, so that waste liquid treatment is also required. On the other hand, in the present embodiment, the laser head 90 itself is less likely to deteriorate over time and the number of consumables is reduced, so that the maintenance frequency can be reduced. Moreover, since it is a dry process using a laser, grinding water and wastewater treatment are not required. Therefore, the running cost can be reduced. Further, since the grinding water does not wrap around to the support wafer S side, it is possible to prevent the support wafer S from being contaminated.

Further, in the present embodiment, the separation surface W1a is ground in step P5. In this grinding, the internal surface modification layer M1 may be removed, and the grinding amount is as small as about several tens of μm. On the other hand, when the back surface Wb is ground to thin the processed wafer W as in the conventional case, the grinding amount is as large as 700 μm or more, and the degree of wear of the grinding wheel is large. Therefore, in the present embodiment, the maintenance frequency can also be reduced.

When a plurality of processing devices 70 are provided in the wafer processing system 1 of the present embodiment, the separation surface W1a of the first separation wafer W1 is ground by one processing device 70, and the second processing device 70 is used to grind the separation surface W1a. The separation surface W2a of the separation wafer W2 may be ground.

Next, another embodiment of the wafer processing system will be described.

FIG. 12 is a plan view schematically showing an outline of the configuration of the wafer processing system 200 according to another embodiment. In the wafer processing system 200, the formation of the internal surface modification layer M1 and the separation of the processed wafer W in the modification / separation device 61 of the wafer processing system 1 of the above embodiment are performed by separate devices. That is, the wafer processing system 200 has a separation / reversing device 201 and a reforming device 202 in place of the reversing device 60 and the reforming / separating device 61 of the wafer processing system 1. The separation / reversing device 201 and the reforming device 202 are provided in the second processing block G2 in this order from above.

The reformer 202 forms an internal surface reformer layer M1 inside the processed wafer W. The reformer 202 includes, for example, a member (laser head 90 or the like) for forming the internal surface reformer layer M1 in the configuration of the reformer separation device 61. The separation inversion device 201 separates the processed wafer W from the internal surface modification layer M1 as a base point, and inverts the front and back surfaces of the separated second separation wafer W2. The separation / reversing device 201 has a structure of a reversing device 60 in addition to a member (suction pad 100 or the like) for separating the processed wafer W in the configuration of the reforming / reversing device 61, for example.

Also in the wafer processing system 200 of the present embodiment, steps P1 to P7 of the above-described embodiment can be performed, and the same effects as those of the embodiment can be enjoyed.

FIG. 13 is a plan view schematically showing an outline of the configuration of the wafer processing system 300 according to another embodiment. The wafer processing system 300 separates the processed wafer W in the reforming separation device 61 of the wafer processing system 1 of the above embodiment and reverses the front and back surfaces of the second separated wafer W2 in the reversing device 60 inside the processing device 70. It is done in. That is, the wafer processing system 300 has a reforming device 301 and a separation / inverting unit 302 in place of the reversing device 60 and the reforming / separating device 61 of the wafer processing system 1.

The reformer 301 is provided in the second processing block G2. The reformer 301 forms an internal surface reformer layer M1 inside the processed wafer W. The reformer 202 includes, for example, a member (laser head 90 or the like) for forming the internal surface reformer layer M1 in the configuration of the reformer separation device 61.

The separation / reversing unit 302 is provided above the rotary table 110 and the chuck 112 at the second delivery position A2 of the processing apparatus 70. The separation / inversion unit 302 has a separation mechanism 303 that separates the processed wafer W from the internal surface modification layer M1 as a base point, and an inversion mechanism 304 that inverts the front and back surfaces of the separated second separation wafer W2. ..

As shown in FIG. 14, the separation mechanism 303 has a suction pad 310 that sucks and holds the back surface Wb of the processed wafer W with respect to the polymerization wafer T held by the chuck 112. The suction pad 310 is configured to be rotatable around a vertical axis by a rotating portion 311. Further, the suction pad 310 is configured to be movable in the Z-axis direction by the elevating portion 312. Then, in the separation mechanism 303, first, in a state where the back surface Wb of the processing wafer W is sucked and held by the suction pad 310, the suction pad 310 is rotated to and the first separation wafer W1 with the internal surface modification layer M1 as a boundary. The second separation wafer W2 is trimmed. Then, in a state where the suction pad 310 sucks and holds the second separation wafer W2, the suction pad 100 is raised to separate the second separation wafer W2 from the first separation wafer W1.

The reversing mechanism 304 has a holding portion 320 for holding the second separation wafer W2. The method for holding the second separated wafer W2 by the holding unit 320 is not particularly limited, but is, for example, suction holding. The holding portion 320 is configured to be rotatable around a horizontal axis by a rotating portion 321. Further, the holding portion 320 is configured to be movable in the Z-axis direction by the elevating portion 322. Then, in the reversing mechanism 304, while the second separated wafer W2 is held by the holding portion 320, the holding portion 320 is rotated about the horizontal axis to invert the front and back surfaces of the second separated wafer W2.

In such a case, in step P2, the internal surface reforming layer M1 is formed inside the processed wafer W in the reforming apparatus 301. After that, the processed wafer W is transferred to the processing device 70 by the wafer transfer device 32 in a state of being supported by the support wafer S, that is, in the state of the polymerized wafer T. In the processing apparatus 70, the polymerization wafer T is delivered to the chuck 112 at the second delivery position A2.

Next, in step P3, the processed wafer W is separated into the separated wafers W1 and W2 by the separation mechanism 303 while the polymerized wafer T is held by the chuck 112. After that, in step P4, the separated second separation wafer W2 is handed over to the holding portion 320 of the reversing mechanism 304, and the holding portion 320 is rotated about the horizontal axis so that the front and back surfaces of the second separation wafer W2 are changed. Inverted. Then, the first separation wafer W1 is conveyed to the chuck 112 of the first delivery position A1, and the second separation wafer W2 is held as it is by the chuck 112 of the second delivery position A2. The first separated wafer W1 may be conveyed by the wafer transfer device 32. Alternatively, while the front and back surfaces of the second separation wafer W2 are inverted by the inversion mechanism 304, the rotary table 110 is rotated to move the first separation wafer W1 from the second delivery position A2 to the first delivery position A1. It may be transported.

The other steps P1 and P5 to P7 are the same as those in the above embodiment. The wafer processing system 300 of the present embodiment can also enjoy the same effects as those of the above embodiment.

The wafer processing systems 1, 200, and 300 of the above embodiments may have a CMP apparatus (CMP: Chemical Mechanical Polishing, chemical mechanical polishing) instead of the wet etching apparatus 40, 41. This CMP apparatus functions in the same manner as the wet etching apparatus 40, 41. That is, in the CMP apparatus, the separation surfaces W1a and W2a ground by the processing apparatus 70 are polished. Then, the processing apparatus 70 removes the grinding marks formed on the separation surfaces W1a and W2a, and smoothes the separation surfaces W1a and W2a. The wafer processing systems 1, 200, and 300 are provided with both wet etching devices 40, 41 and a CMP device, and both wet etching and CMP may be performed on the separation surfaces W1a and W2a.

In the wafer processing systems 1, 200, and 300 of the above embodiments, the front and back surfaces of the second separation wafer W2 are inverted in the inversion device 60, the separation inversion device 201, and the separation inversion unit 302, respectively. The front and back surfaces of the second separation wafer W2 may be inverted in the transfer arm 33 of the device 32. In such a case, as shown in FIG. 15, the transport arm 33 supported by the arm member 34 rotates about the horizontal axis, and the front and back surfaces of the second separation wafer W2 are inverted.

Further, although the wafer transfer device 32 has two transfer arms 33, as shown in FIG. 16, one transfer arm 400 may hold and transfer two separate wafers W1 and W2. A suction pad 401 for sucking and holding the first separation wafer W1 is provided on one surface of the transport arm 400, and a suction pad 402 for sucking and holding the second separation wafer W2 is provided on the other surface. The transport arm 400 is supported by an arm member 34 and is rotatably configured around a horizontal axis.

In the wafer processing systems 1, 200, and 300 of the above embodiments, the internal surface reforming layer M1 was formed inside the processing wafer W in the reforming separation device 61 and the reforming devices 202, 301, respectively. Processing systems 1, 200, and 300 may be used. In such a case, the internal surface modification layer M1 is formed in advance inside the processing wafer W transported to the wafer processing systems 1, 200, and 300.

Here, normally, the peripheral edge of the processed wafer W is chamfered, but for example, when the back surface Wb of the processed wafer W is ground and thinned as in the conventional case, the peripheral edge of the processed wafer W is sharply pointed. It becomes a shape (so-called knife edge shape). Then, chipping occurs at the peripheral edge of the processed wafer W, and the processed wafer W may be damaged. Therefore, so-called edge trimming is performed in which the peripheral edge portion of the processed wafer W is removed in advance before the grinding process.

Therefore, edge trimming may be performed in the wafer processing systems 1, 200, and 300 of the above embodiments. In the following description, a case where edge trimming is performed in the wafer processing system 1 will be described.

In the wafer processing system 1, edge trimming is performed in the reforming and separating apparatus 61. That is, in the modification / separation device 61, a peripheral modification layer is formed in the thickness direction along the boundary between the peripheral edge portion and the central portion of the processed wafer W, and the peripheral edge portion of the processing wafer W is removed from the peripheral modification layer as a base point. do. In the modification / separation device 61 of the present embodiment, the laser head 90 functions as a peripheral modification section to form a peripheral modification layer inside the processed wafer W.

Next, the wafer processing according to another embodiment performed by using the wafer processing system 1 will be described. FIG. 17 is a flow chart showing a main process of wafer processing. In this embodiment, detailed description of the same processing as that of the embodiment shown in FIG. 5 will be omitted.

First, as shown in FIG. 18A, a cassette Ct containing a plurality of polymerized wafers T is placed on the cassette mounting table 10 of the loading / unloading station 2.

Next, the wafer transfer device 22 takes out the polymerized wafer T in the cassette Ct and transfers it to the alignment device 50. In the alignment device 50, the horizontal orientation of the polymerization wafer T (processed wafer W) is adjusted (step Q1 in FIG. 17).

Next, the polymerized wafer T is transferred to the reforming and separating device 61 by the wafer transfer device 32. In the modification / separation device 61, the peripheral modification layer M2 is formed inside the processed wafer W as shown in FIG. 18B (step Q2 in FIG. 17).

In the reforming separation device 61, as shown in FIG. 19, the laser head 90 is moved above the processing wafer W to the boundary between the peripheral portion We and the central portion Wc of the processing wafer W. After that, the laser beam L is irradiated from the laser head 90 to the inside of the processing wafer W while rotating the chuck 80 by the rotating portion 82. Then, an annular peripheral modification layer M2 is formed along the boundary between the peripheral portion We and the central portion Wc.

The peripheral edge modification layer M2 serves as a base point for removing the peripheral edge portion We in the edge trim, and is formed in an annular shape along the boundary between the peripheral edge portion We and the central portion Wc to be removed in the processed wafer W. NS. The peripheral edge portion We is, for example, in the range of 1 mm to 5 mm in the radial direction from the outer end portion of the processed wafer W, and includes a chamfered portion.

Further, the peripheral modification layer M2 is stretched in the thickness direction and has a vertically long aspect ratio. The lower end of the peripheral modification layer M2 is located above the target surface (dotted line in FIG. 19) of the processed wafer W after grinding. That is, the distance H3 between the lower end of the peripheral modification layer M2 and the surface Wa of the processed wafer W is larger than the target thickness H2 of the processed wafer W after grinding. In such a case, the peripheral modification layer M2 does not remain on the processed wafer W after grinding.

Further, inside the processed wafer W, cracks C2 grow from the peripheral modification layer M2 and reach the surface Wa. However, the crack C2 does not reach the back surface Wb.

Next, in the same modification / separation device 61, the internal surface modification layer M3 is formed inside the processed wafer W as shown in FIG. 18 (c) (step Q3 in FIG. 17). Similar to the internal surface modification layer M1 shown in FIG. 6, the internal surface modification layer M3 extends in the plane direction of the processed wafer W. Further, the internal surface modification layer M3 is formed at the same height as the peripheral surface modification layer M2, and the lower end of the internal surface modification layer M3 is located above the target surface of the processed wafer W after grinding. A plurality of internal surface modification layers M3 are formed in the surface direction, and the plurality of internal surface modification layers M3 are formed in the surface direction from the central portion to the peripheral modification layer M2, that is, in the central portion Wc. The method of forming the internal surface modification layer M3 is the same as in step P2. Further, cracks C3 grow in the plane direction from the internal surface modification layer M3. Further, when the pitch of the internal surface modification layer M3 is small, the crack C3 may not be present.

Next, in the same reforming and separating apparatus 61, as shown in FIG. 18D, the processed wafers W are used as the first separation wafer W1 and the second separation wafer W1 with the internal surface reforming layer M3 and the peripheral modifying layer M2 as base points. Separated into the separated wafer W2 (step Q4 in FIG. 17). At this time, since the inner surface modification layer M3 and the peripheral modification layer M2 are formed at the same height, the second separation wafer W2 is separated together with the peripheral edge portion We. The method for separating the processed wafer W is the same as in step P3.

Next, the second separated wafer W2 is transferred to the reversing device 60 by the wafer transfer device 32. In the reversing device 60, the front and back surfaces of the second separation wafer W2 are reversed (step Q5 in FIG. 17). The method of reversing the second separation wafer W2 is the same as in step P4.

Next, the first separation wafer W1 and the second separation wafer W2 are transferred to the processing device 70 by the wafer transfer device 32, respectively. In the processing apparatus 70, as shown in FIG. 18E, the separation surface W1a of the first separation wafer W1 is ground to remove the peripheral surface modification layer M2 and the internal surface modification layer M3 remaining on the separation surface W1a. At the same time, as shown in FIG. 18 (f), the separation surface W2a of the second separation wafer W2 is ground to remove the peripheral modification layer M2 and the inner surface modification layer M3 remaining on the separation surface W2a (FIG. 17). Step Q6). The method of grinding the separation surfaces W1a and W2a is the same as in step P5.

Next, the first separation wafer W1 and the second separation wafer W2 are transferred to the cleaning devices 51 and 52 by the wafer transfer device 32, respectively. In the cleaning devices 51 and 52, the separation surfaces W1a and W2a are scrubbed and cleaned, respectively (step Q7 in FIG. 17). The method for cleaning the separation surfaces W1a and W2a is the same as in step P6.

Next, the first separation wafer W1 and the second separation wafer W2 are transferred to the wet etching devices 40 and 41 by the wafer transfer device 22, respectively. In the wet etching devices 40 and 41, the separation surfaces W1a and W2a are wet-etched, respectively (step Q8 in FIG. 17). The wet etching method for the separation surfaces W1a and W2a is the same as in step P7.

After that, the first separation wafer W1 and the second separation wafer W2 that have been subjected to all the processing are transferred to the cassettes Cw1 and Cw2 of the cassette mounting table 10 by the wafer transfer device 22, respectively. In this way, a series of wafer processing in the wafer processing system 1 is completed.

In this embodiment as well, the same effects as those in the above embodiment can be enjoyed. Moreover, according to the present embodiment, when performing edge trimming, after forming the peripheral edge modifying layer M2 inside the processed wafer W in step Q2, the peripheral edge portion We is removed from the peripheral edge modifying layer M2 as a base point. There is. For example, in the conventional method, the peripheral portion We is ground or cut, and the grinding wheel wears and requires regular replacement. On the other hand, in the present embodiment, the degree of deterioration of the laser head 90 itself with time is small, and the maintenance frequency can be reduced.

However, this disclosure does not exclude edge trim by grinding.

Moreover, the formation of the peripheral modification layer M2 in step Q1 and the formation of the internal surface modification layer M3 in step Q3 can be performed in the same modification separation device 61. Therefore, the equipment cost can be reduced. Of course, the peripheral modification layer M2 and the inner surface modification layer M3 may be formed by separate devices. For example, when the above-mentioned wafer processing is continuously performed on a plurality of polymerized wafers T, the throughput of the wafer processing can be increased by forming the peripheral modification layer M2 and the internal surface modification layer M1 in separate devices. Can be improved.

Further, in the above modified separation device 61, the laser head 90 formed the peripheral modified layer M2 and the internal surface modified layer M3, but these peripheral modified layers M2 and the internal surface modified layer M3 are separate from each other. It may be formed by using the laser head of.

The method of performing edge trimming in the wafer processing system 1 is not limited to the above embodiment. Next, the wafer processing according to another embodiment will be described. This embodiment is almost the same as the embodiment shown in FIG. 18, but the internal surface modification layer formed in step Q3 is different.

In step Q3, the internal surface modification layer M4 is formed inside the processed wafer W as shown in FIG. 20 (c). While the internal surface modification layer M3 shown in FIG. 18 was formed up to the peripheral surface modification layer M2, the internal surface modification layer M4 of the present embodiment extends from the central portion to the outer end portion in the plane direction. It is formed. The crack C4 grows in the plane direction from the internal surface modification layer M4. Further, when the pitch of the internal surface modification layer M4 is small, the crack C4 may not be present.

In such a case, in step Q4, as shown in FIG. 20D, the second separation wafer W2 above the internal surface modification layer M4 and the peripheral edge portion We below the internal surface modification layer M4 are separately separated. Be separated. That is, the second separation wafer W2 is separated from the internal surface modification layer M4 as a base point, and the peripheral edge portion We is separated from the peripheral edge modification layer M2 as a base point. The other steps Q1 to Q2 and Q5 to B8 are the same as those of the embodiment shown in FIG.

In this embodiment as well, the same effects as those in the above embodiment can be enjoyed.

In the above embodiment, when performing edge trimming in the wafer processing system 1, the peripheral edge portion We was removed when the processed wafer W was separated, but even if the processed wafer W is separated after removing the peripheral edge portion We. good.

In such a case, in the modification / separation device 61, first, in step Q2, the peripheral modification layer M5 and the division modification layer M6 are formed inside the processed wafer W as shown in FIG. 21B.

As shown in FIG. 22, the laser head 90 is moved above the processing wafer W to the boundary between the peripheral portion We and the central portion Wc of the processing wafer W. After that, while rotating the chuck 80 by the rotating portion 82, the laser beam L is irradiated from the laser head 90 to the inside of the processing wafer W to form the peripheral modification layer M5 inside the processing wafer W.

Similar to the peripheral modification layer M2 of the above embodiment, the peripheral modification layer M5 is stretched in the thickness direction, and the lower end of the peripheral modification layer M5 is the target surface of the processed wafer W after grinding (dotted line in FIG. 22). ) Is located above.

Further, inside the processed wafer W, cracks C5 propagate from the peripheral modification layer M5 and reach the front surface Wa and the back surface Wb. A plurality of peripheral modification layers M5 may be formed in the thickness direction.

Next, the laser head 90 is moved in the same modification / separation device 61 to form the split modification layer M6 inside the processing wafer W and outside the peripheral modification layer M5 in the radial direction. The split modified layer M6 also extends in the thickness direction like the peripheral modified layer M5 and has a vertically long aspect ratio. Further, the crack C6 propagates from the split modified layer M6 and reaches the front surface Wa and the back surface Wb. A plurality of divided modified layers M6 may also be formed in the thickness direction.

Then, by forming a plurality of the split-modified layers M6 and the cracks C6 at a pitch of several μm in the radial direction, as shown in FIG. Layer M6 is formed. In the illustrated example, the divided and modified layers M6 of the line extending in the radial direction are formed at eight positions, but the number of the divided and modified layers M6 is arbitrary. At least, if the split reforming layer M6 is formed at two positions, the peripheral portion We can be removed. In such a case, when the peripheral edge portion We is removed in the edge trim, the peripheral edge portion We is divided into a plurality of parts by the divided modified layer M6 while being separated from the annular peripheral edge modified layer M5 as a base point. Then, the peripheral portion We to be removed is fragmented and can be removed more easily.

Next, in the same modification / separation device 61, the peripheral edge portion We of the processed wafer W is removed with the peripheral edge modification layer M5 as a base point as shown in FIG. 21 (c). The modified separation device 61 of the present embodiment is provided with the tape 150 shown in FIG. 24, and the peripheral portion We is removed by expanding the tape 150.

First, as shown in FIG. 24A, the expandable tape 150 is attached to the back surface Wb of the processing wafer W. Subsequently, as shown in FIG. 24B, the tape 150 is expanded in the radial direction of the processed wafer W, and the peripheral edge portion We is separated from the processed wafer W with the peripheral edge modifying layer M5 as a base point. At this time, the peripheral portion We is separated into small pieces with the split reforming layer M6 as a base point. Then, as shown in FIG. 24C, the tape 150 is raised and peeled from the processed wafer W to remove the peripheral edge We. At this time, in order to facilitate the peeling of the tape 150, a treatment for reducing the adhesive strength of the tape 150, for example, an ultraviolet irradiation treatment may be performed.

The method of removing the peripheral portion We is not limited to this embodiment. For example, an air blow or a water jet may be injected onto the peripheral edge portion We, and the peripheral edge portion We may be pressed and removed. Alternatively, a jig such as tweezers may be brought into contact with the peripheral edge portion We to physically remove the peripheral edge portion We.

Next, in the same modification / separation device 61, the internal surface modification layer M7 is formed in step Q3 as shown in FIG. 21 (d), and the processed wafer W is further formed in step Q4 as shown in FIG. 21 (e). Separation Wafers W1 and W2 are separated.

Next, in the inversion device 60, the front and back surfaces of the second separation wafer W2 are inverted in step Q5. Then, in step Q6, the processing apparatus 70 grinds the separation surfaces W1a and W2a as shown in FIGS. 21 (f) and 21 (g). After that, step Q7 is performed in the cleaning devices 51 and 52, and step Q8 is performed in the wet etching devices 40 and 41. In this way, a series of wafer processing in the wafer processing system 1 is completed.

In this embodiment as well, the same effects as those in the above embodiment can be enjoyed. Moreover, according to the present embodiment, since the split reforming layer M6 is formed in step Q2, the peripheral edge portion We to be removed can be made into small pieces. Therefore, edge trimming can be performed more easily.

In the wafer processing systems 1, 200 and 300 of the above embodiments, the processing wafer W and the support wafer S are bonded by an external bonding device of the wafer processing systems 1, 200 and 300, but the bonding device is a wafer. It may be provided inside the processing systems 1, 200 and 300.

When joining the processed wafer W and the support wafer S, if the oxide films Fw and Fs are also joined at the peripheral edge portion We, pretreatment is performed on the oxide films Fw and Fs before the joining treatment. You may go. As the pretreatment, for example, the surface layer of the oxide film Fw on the peripheral portion We may be removed, or the oxide film Fw may be projected. Alternatively, the surface of the oxide film Fw may be roughened to roughen the surface. By performing such a pretreatment, it is possible to suppress the bonding of the oxide films Fw and Fs at the peripheral portion We, that is, it is possible to form an unbonded region of the oxide films Fw and Fs at the peripheral portion We. Therefore, the peripheral portion We can be appropriately removed.

Further, in the above example, the unjoined region is formed before the joining treatment, but the unjoined region may be formed after the joining treatment. For example, after joining the processed wafer W and the support wafer S, it is possible to reduce the bonding strength and form an unbonded region by irradiating the outer peripheral portion of the oxide film Fw with a laser beam.

In the above embodiment, the case where the processed wafer W and the support wafer S are directly bonded has been described, but the processed wafer W and the support wafer S may be bonded via an adhesive.

Further, in the above-described embodiment, the case where the processed wafer W in the polymerized wafer T is thinned has been described, but the above-described embodiment can also be applied to the case where one wafer is thinned. Further, the above embodiment can also be applied when the polymerization wafer T is peeled off from the processing wafer W and the support wafer S.

The embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. The above embodiments may be omitted, replaced or modified in various forms without departing from the scope of the appended claims and their gist.

1 Wafer processing system 32 Wafer transfer device 60 Inversion device 61 Modification separation device 70 Processing device S Support wafer T Polymerized wafer W Processing wafer

One aspect of the present disclosure is a substrate processing system for processing a substrate, in which the substrate is separated from a first separation substrate and a second separation substrate starting from an internal surface modification layer formed in the surface direction inside the substrate. The substrate is attached to at least the separation portion or the processing portion for grinding the separation portion for separating into the substrate, the separation surface for the first separation substrate and the separation surface for the second separation substrate, respectively. a transport mechanism for transporting an inverting mechanism for inverting the front and back surfaces of said second separation board, have a, the processing unit, the substrate, to hold the first separation substrate or the second substrate separation A rotary table provided with a plurality of holding portions, a first grinding portion for grinding the separation surface of the first separation substrate held by the holding portion, and the second grinding portion held by the holding portion. It has a second grinding portion for grinding the separation surface of the separation substrate of the above .

The support wafer S is a wafer that supports the processed wafer W, and is, for example, a silicon wafer. An oxide film Fs, for example, a SiO ₂ film (TEOS film) is formed on the surface Sa of the support wafer S. Further, the support wafer S functions as a protective material for protecting the device on the surface Wa of the processing wafer W. When a plurality of devices are formed on the surface Sa of the support wafer S, a device layer (not shown) is formed on the surface Sa in the same manner as the processing wafer W.

The reformer 301 is provided in the second processing block G2. The reformer 301 forms an internal surface reformer layer M1 inside the processed wafer W. The reformer 301 includes, for example, a member (laser head 90 or the like) for forming the internal surface reformer layer M1 in the configuration of the reformer separation device 61.

Next, in step P3, the processed wafer W is separated into the separated wafers W1 and W2 by the separation mechanism 303 while the polymerized wafer T is held by the chuck 112. After that, in step P4, the separated second separation wafer W2 is handed over to the holding portion 320 of the reversing mechanism 304, and the holding portion 320 is rotated about the horizontal axis so that the front and back surfaces of the second separation wafer W2 are changed. Inverted. Then, the first separation wafer W1 is conveyed to the chuck 112 of the first delivery position A1, and the second separation wafer W2 is held as it is by the chuck 112 of the second delivery position A2. The first separated wafer W1 may be conveyed by the wafer transfer device 32. Alternatively, while the front and back surfaces of the second separation wafer W2 are inverted by the inversion mechanism 304, the rotary table 110 is rotated to move the first separation wafer W1 from the second delivery position A2 to the first delivery position A1. May be transported to.

In the wafer processing systems 1, 200, and 300 of the above embodiments, the internal surface reforming layer M1 was formed inside the processing wafer W in the reforming separation device 61 and the reforming devices 202, 301, respectively. It may be performed outside the processing systems 1, 200, and 300. In such a case, the internal surface modification layer M1 is formed in advance inside the processing wafer W transported to the wafer processing systems 1, 200, and 300.

In such a case, in step Q4, as shown in FIG. 20D, the second separation wafer W2 above the internal surface modification layer M4 and the peripheral edge portion We below the internal surface modification layer M4 are separately separated. Be separated. That is, the second separation wafer W2 is separated from the internal surface modification layer M4 as a base point, and the peripheral edge portion We is separated from the peripheral edge modification layer M2 as a base point. The other steps Q1 to Q2 and Q5 to Q8 are the same as those of the embodiment shown in FIG.

Claims (14)

A substrate processing system that processes substrates
Starting from the internal surface modification layer formed in the direction of the inner surface of the substrate, a separation portion for separating the substrate into a first separation substrate and a second separation substrate, and a separation portion.
A processed portion for grinding the separation surface of the first separation substrate and the separation surface of the second separation substrate, respectively.
A transport mechanism for transporting the substrate to at least the separation portion or the processing portion.
A substrate processing system having an inversion mechanism that inverts the front and back surfaces of the second separation substrate. The substrate processing system according to claim 1, wherein the transfer mechanism conveys the first separation substrate and the second separation substrate to at least the separation portion or the processing portion. The processed part
A rotatable rotary table comprising the substrate, the first separation substrate, or a plurality of holding portions for holding the second separation substrate.
A first grinding portion for grinding the separation surface of the first separation substrate held by the holding portion, and a first grinding portion.
The substrate processing system according to claim 1 or 2, further comprising a second grinding portion for grinding the separation surface of the second separating substrate held by the holding portion. The substrate processing system according to claim 3, wherein the separating portion is provided above the rotary table and separates the substrate held by the holding portion. The substrate processing system according to claim 4, wherein the separating portion has the reversing mechanism. The substrate processing system according to any one of claims 1 to 5, wherein the reversing mechanism is provided in the transport mechanism. The substrate processing system according to any one of claims 1 to 5, further comprising an internal surface modification portion that irradiates the inside of the substrate with a laser beam to form the internal surface modification layer. 2. The substrate processing system according to any one of the above. It is a substrate processing method that processes a substrate.
In the separation section, starting from the internal surface modification layer formed in the direction of the inner surface of the substrate, the substrate is separated into a first separation substrate and a second separation substrate.
The front and back surfaces of the second separation substrate are inverted by the inversion mechanism, and
A substrate processing method comprising grinding a separation surface of the first separation substrate and a separation surface of the second separation substrate, respectively, in a processed portion. The processed part
A rotatable rotary table comprising the substrate, the first separation substrate, or a plurality of holding portions for holding the second separation substrate.
A first grinding portion for grinding the separation surface of the first separation substrate held by the holding portion, and a first grinding portion.
It has a second grinding portion for grinding the separation surface of the second separating substrate held by the holding portion, and has a second grinding portion.
The ninth aspect of the present invention, wherein the first grinding section grinds the separation surface of the first separation substrate and the second grinding section grinds the separation surface of the second separation substrate in parallel. Substrate processing method. The substrate processing method according to claim 10, wherein the separating portion is provided above the rotary table and separates the substrate held by the holding portion. The substrate treatment according to any one of claims 9 to 11, wherein the front and back surfaces of the second separation substrate are inverted by the inversion mechanism while the second separation substrate separated by the separation portion is being conveyed. Method. The substrate processing method according to any one of claims 9 to 12, wherein a laser beam is irradiated to the inside of the substrate to form the internal surface modification layer before the substrate is separated by the separation portion. .. Before separating the substrate by the separation portion, a laser beam is irradiated in the thickness direction along the boundary between the peripheral portion and the central portion to be removed inside the substrate to form a peripheral modification layer. The substrate processing method according to any one of claims 9 to 13.

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