TW202016631A - 光電裝置 - Google Patents

光電裝置 Download PDF

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TW202016631A
TW202016631A TW108124264A TW108124264A TW202016631A TW 202016631 A TW202016631 A TW 202016631A TW 108124264 A TW108124264 A TW 108124264A TW 108124264 A TW108124264 A TW 108124264A TW 202016631 A TW202016631 A TW 202016631A
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conductor
transmissive
pixel electrode
array
radiopaque
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布拉格 亞格里奧古
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英商弗萊克英納寶有限公司
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Abstract

一種裝置，包括：層的堆疊，其支撐在支撐膜上並限定像素電極陣列和電路系統，經由所述電路系統每一像素電極能夠經由在所述像素電極陣列外部的導體獨立地定址；以及透射導體，其在所述像素電極的區域中的所述層的堆疊下面的第一導體層級處支撐在所述支撐膜上；其中所述導體是透光的，且在所述第一導體層級內連接到在所述像素電極陣列外部的導體。

Description

光電裝置
發明領域 一些光電裝置包括可獨立定址的像素電極的陣列，且增加每一像素電極和其它導體元件之間的電容耦合可以是有利的。
發明背景 一種常規技術包括在限定電路系統的層的堆疊內限定存儲電容器，經由所述電路系統每一像素電極可獨立定址。
發明概要 本申請的發明人已經對開發一種用於實現與像素電極的良好電容耦合的替代技術進行了研究。
在此提供一種裝置，包括：層的堆疊，其支撐在支撐膜上並限定像素電極陣列和電路系統，經由所述電路系統每一像素電極能夠經由在所述像素電極陣列外部的導體獨立地定址；以及透射導體，其在所述像素電極的區域中的所述層的堆疊下面的第一導體層級處支撐在所述支撐膜上；其中所述導體是透光的，且在所述第一導體層級內連接到在所述像素電極陣列外部的導體。
根據一個實施例，在所述像素電極陣列外部的所述導體在所述堆疊內通過導體材料連接到第二導體層級。
根據一個實施例，所述透射導體針對在400和800nm之間的所有波長展現大體上相同的透射比。
根據一個實施例，所述透射導體針對可見光譜中的一些波長展現大體高於所述可見光譜中的其它波長的透射比。
根據一個實施例，所述透射導體包括：在紅色區域中展現主透射峰值的至少一個透射導體；在藍色區域中展現主透射峰值的至少一個透射導體；以及在藍色區域中展現主透射峰值的至少一個透射導體。
根據一個實施例，所述層的堆疊包含：源極-漏極導體圖案，其限定源極導體陣列和漏極導體陣列；以及半導體溝道材料，其在溝道區域中連接所述源極和漏極導體，在所述溝道區域中，所述源極和漏極導體最近處；並且其中所述裝置在所述第一導體層級處在所述溝道區域中另外包括不透射導體，其中所述不透射導體在所述可見光譜內大體上不透射。
根據一個實施例，所述不透射導體在所述第一導體層級內與所述透射導體分離。
根據一個實施例，所述不透射導體和透射導體在所述第一導體層級內彼此接觸。
根據一個實施例，所述透射導體包括一種或多種導電金屬氧化物材料，且所述不透射導體包括一種或多種金屬材料。
根據一個實施例，所述不透射導體包括一種或多種金屬材料，並且限定週期性納米孔陣列。
在此還提供一種操作如上文所描述的裝置的方法，包括向所述透射導體施加一個或多個電壓，所述一個或多個電壓促進所述透射導體與所述像素電極的電容耦合。
根據一個實施例，所述方法包括：向所有透射導體施加共同電壓，所述共同電壓促進所述透射導體與所述像素電極的電容耦合。
在此還提供一種操作如上文所描述的裝置的方法，包括使用所述透射導體來增加所述像素電極的存儲電容。
具體實施方式 為簡潔性和清晰性起見，下文描述包括僅具有4個像素電極的陣列的裝置的實例的實施例，但是相同技術同等地適用於包括具有非常多的像素電極的陣列的裝置。
下文描述的實施例是針對邊緣場開關（FFS）LCD裝置的頂柵電晶體陣列的實例，但是所述技術還適用於FFS-LCD裝置的其它類型的電晶體陣列，以及包含其它類型的LCD裝置的其它類型的裝置的電晶體陣列。
出於本文件的目的，術語“源極導體”是指在驅動電路系統（例如驅動器晶片）和半導體溝道之間電串聯的導體，術語“漏極導體”是指經由半導體溝道與驅動電路系統（例如，驅動器晶片）電串聯的導體。
半導體溝道材料可包括一種或多種有機半導體材料（例如有機聚合物半導體）和/或一種或多種無機半導體材料。
圖1和2示出根據本發明的實施例的LCD裝置的控制組件的實例。
控制組件包括在支撐元件2上原位形成的圖案化導體、半導體和絕緣體層的一堆疊。例如，支撐元件2包括自撐式柔性塑膠膜作為它的主要組件。所述堆疊限定像素電極14的陣列和用於經由在像素電極14的陣列外部的導體對像素電極14中的每一個進行獨立定址的電路系統。電路系統包含：在第一導體層級處的源極-漏極導體圖案；在第二導體層級處的柵極導體10（圖2中未展示）的陣列；在第三導體層級處的像素電極14的陣列；以及在第四導體層級處的圖案化共同導體24。每對鄰近層級之間的是一個或多個絕緣體/介電層，但是不同導體層級中的導體元件之間可存在經由穿過絕緣體/介電層形成的通路孔20的導電連接。
在此實例中，由所述堆疊限定的電路系統散佈在4個導體層級上，但是下文描述的技術同等地適用於FFS-LCD裝置的控制組件（或其它類型的LCD裝置或其它光電裝置的控制組件），其中電路系統散佈在更小或更大數目個導體層級上。例如，下文描述的技術同等地適用於FFS-LCD裝置的控制組件，其中由所述堆疊限定的電路系統散佈在兩個層級上，其中源極-漏極導體圖案和像素電極的陣列在一個導體層級處，且柵極導體和圖案化共同導體在第二導體層級處。
源極-漏極導體圖案至少限定：（i）源極導體4a的陣列，每個源極導體與相應列的電晶體相關聯並且延伸超出像素電極的陣列的邊緣以供連接到驅動器晶片（未示出）的相應終端，和（ii）漏極導體4b的陣列，每個漏極導體與相應電晶體相關聯。每個源極導體4a包含定址線，所述定址線延伸超出像素電極的陣列的邊緣以供連接到驅動器晶片的相應終端。
根據一個變化形式，源極和漏極導體在溝道區域5中包括互相交叉的指狀件，在溝道區域5中，源極和漏極導體最近處，以便增加源極和漏極導體之間的半導體溝道的寬度。
層的堆疊包含在工件上原位形成的半導體溝道材料的圖案化層。半導體溝道材料的圖案化層提供半導體溝道材料的隔離島6的陣列，每個島6提供用於所述陣列的相應電晶體的半導體溝道。半導體溝道材料可以經由一個或多個層接觸源極和漏極導體，所述一個或多個層改進源極-漏極導體圖案和半導體溝道材料之間的電荷轉移，所述一個或多個層例如是合適的有機材料的自組裝單層。
在第二導體層級處的柵極導體圖案限定柵極導體10的陣列，每個柵極導體經由柵極介電層（或柵極介電層的堆疊）8電容耦合到相應行的電晶體的半導體溝道6。每個柵極導體10與相應行的電晶體相關聯，並且每個柵極導體延伸超出像素電極陣列的邊緣以電連接到驅動器晶片的相應終端。每個電晶體與柵極和源極導體的唯一組合相關聯，由此每一像素電極14可以獨立於所有其它像素電極14經由在像素電極陣列外部的源極和柵極導體的部分進行定址。
在第3導體層級處的每一像素電極14經由穿過柵極介電層8及第2和第3導體層級之間的一個或多個絕緣體/介電層12形成的通路孔20向下延伸到第1導體層級處的相應漏極導體。
第4導體層級處的圖案化共同導體24經由第3和第4導體層級之間的一個或多個絕緣體/介電層電容耦合到像素電極14。FFS-LCD裝置的操作涉及控制像素電極14和COM導體24之間的電位差。
此實例實施例包括同樣由支撐元件2支撐但是在上述層的堆疊下面的另一導體層級（下文稱為第0導體層級）處的其它導體16、18。平坦化層26（例如，厚度約為2微米的SU-8層）在這些額外導體上方形成，並提供平坦化表面，用於形成上文所描述的源極-漏極導體圖案。
第0導體層級處的這些導體16、18包括至少在上文所提及的溝道區域5中的第一組不透射導體18。在此實例中，這些不透射導體18採取一組不透射平行導體線路18的形式，每個線路18在相應列的電晶體的溝道區域5下傳遞。每個不透射導體線路18延伸到在像素電極4的陣列外部的一位置，在那裡它們經由一個或多個通路孔28通過平坦化層26連接到第一導體層級處的一個或多個導體。這有助於向不透射導體18施加電壓。
在此實例中，不透射導體線路18是固體金屬線，且在所述金屬線的覆蓋區內不具有任何圖案化。不透射導體線路18具有足以充分遮蔽半導體溝道6以防止來自支撐元件2的方向的光的厚度和寬度。不透射導體線路18還可用來調節電晶體的閾值電壓，其是借由在第一導體層級處在像素電極陣列的區域外部經由上文所提及的導體向導體線路18施加偏置電壓。不透射導體線路在大體上整個可見光譜內可為大體上不透射/不透明的。
第0導體層級處的額外導體另外包括在上文所提及的像素電極區域5的至少部分中的透射導體16。在此實例中，這些透射導體16採取第二組平行導體線路16的形式（與不透射導體線路16平行以建立交替的透射和不透射導體線路的圖案）。每個透射導體線路16在相應列的電晶體的像素電極區域14下傳遞；並且每個透射導體線路16還延伸到在像素電極陣列外部的一位置，在那裡它們經由一個或多個通路孔28通過平坦化層26連接到第一導體層級處的一個或多個導體。這有助於向透射導體線路16施加電壓。
在此實例中，透射導體線路16在第0導體層級內與不透射導體線路18隔離，以便允許這兩組導體線路能夠保持在不同電位。例如，不透射導體線路18可以保持在設計成實現電晶體的閾值電壓的所需調節的一個或多個電位，而透射導體線路16可以全部保持在設計成實現像素電極14和透射導體16之間經由介電層26、8、12的所要層級的電容耦合的共同電位。
根據圖3中所說明的一個變化形式：所有不透射導體線路18都在第0導體層級內通過在像素電極陣列的一個邊緣外部的區域中的導體匯電條32以導電方式彼此連接；並且所有透射導體線路16都在第0導體層級內通過在像素電極陣列的相對邊緣外部的區域中的導體匯電條30以導電方式彼此連接。所有透射導體線路16經由單個通路孔28（或多個共同通路孔28）通過平坦化層26連接到第一導體層級處的共同導體。這有助於向所有透射導體線路16施加共同電壓。類似地，所有不透射導體線路18都經由單個通路孔28（或多個共同通路孔28）通過平坦化層26連接到第一導體層級處的共同導體。
在一個實例中，透射導體線路16由導電金屬氧化物材料製成，例如氧化銦錫（ITO），並且在大體上整個可見光譜內展現大體上相同的透射比，由此例如在通過透射導體16查看時，白色光的背光源呈現白色。
在另一實例中，透射導體線路16由金屬材料製成，但是在像素電極14之下的透射導體線路116的至少部分中限定納米孔（例如，半徑約為100nm的孔）的週期性陣列。這些納米孔填有沉積後的平坦化層26的介電材料，並且用作等離子濾色器，其中有在可見光譜內在一波長處取決於納米孔陣列的間距的主透射峰值。在一個實例中，納米孔陣列的間距對於不同像素區域是不同的，使得透射導體18提供濾色器陣列：例如，第一組濾波器針對第一組像素電極在可見光譜的紅色區域中具有主透射峰值；第二組濾波器針對第二組像素電極在綠色區域中具有主透射峰值；以及第三組濾波器針對第三組像素電極在藍色區域中具有主透射峰值。
在一個實例中，不透射導體和透射導體16、18均形成位於像素電極陣列的整個區域上連續延伸的金屬材料的連續層的部分，其中像素電極區域中的連續層進行納米孔圖案化，但是溝道區域5中不進行納米孔圖案化。
上文所描述的控制組件可通過以下操作併入到FFS-LCD單元中：在第4導體層級上方形成對準層（例如，摩擦聚醯亞胺層(rubbed polyimide layer)）；以及在所得組件和同樣具有相同種類的對準層的對立組件之間裝納LC材料。可以使用間隔物來更好的保持這兩個組件之間的液晶(liquid crystal)材料在所有像素上的均勻厚度。
本發明的實例實施例在上文在FFS-LCD顯示裝置的上下文中描述，但是相同技術還適用於其它類型的顯示裝置（例如平面切換（IPS）LCD裝置，其中像素電極14和COM導體24在同一導體層級處），以及包括像素電極陣列的其它類型的裝置的生產，所述裝置例如是感測器裝置。
除了上文明確提及的任何修改之外，本領域技術人員還將清楚，可以在本發明的範圍內對描述的實施例進行各種其它修改。
申請人在此單獨公開本文描述的每一個體特徵及兩個或更多個此類特徵的任意組合，以本領域技術人員的普通知識，能夠總體上基於本說明書實行此類特徵或組合，而不考慮此類特徵或特徵的組合是否能解決本文所公開的任何問題；且不對權利要求書的範圍造成限制。申請人指示本發明的各方面可由任何此類個別特徵或特徵的組合組成。
2:支撐元件 4a:源極導體 4b:漏極導體 5:溝道區域 6:隔離島 8:柵極介電層(或柵極介電層的堆疊) 10:柵極導體 12:絕緣體/介電層 14:像素電極 16:透射導體；第二組平行導體線路 18:不透射導體線路；第一組不透射導體 20:通路孔 22:層 24:圖案化共同導體 26:平坦化層 28:通路孔 30、32:導體匯電條
在下文中僅以示例的方式並參考附圖來描述本發明的實施例，附圖中： 圖1是本發明的實施例的示意性橫截面圖示； 圖2是本發明的實施例的示意性平面圖示；以及 圖3是圖2中示出的實施例的變化形式的示意性平面圖示。
2:支撐元件
4a:源極導體
4b:漏極導體
5:溝道區域
6:隔離島
8:柵極介電層(或柵極介電層的堆疊)
10:柵極導體
12:絕緣體/介電層
14:像素電極
16:透射導體；第二組平行導體線路
18:不透射導體線路；第一組不透射導體
20:通路孔
22:層
24:圖案化共同導體
26:平坦化層

Claims (13)

  1. 一種裝置，其特徵在於：包括：層的堆疊，其支撐在支撐膜上並限定像素電極陣列和電路系統，經由所述電路系統每一像素電極能夠經由在所述像素電極陣列外部的導體獨立地定址；以及透射導體，其在所述像素電極的區域中的所述層的堆疊下面的第一導體層級處支撐在所述支撐膜上；其中所述導體是透光的，且在所述第一導體層級內連接到在所述像素電極陣列外部的導體。
  2. 如請求項1所述的裝置，其特徵在於：在所述像素電極陣列外部的所述導體在所述堆疊內通過導體材料連接到第二導體層級。
  3. 如請求項1所述的裝置，其特徵在於：所述透射導體針對在400和800nm之間的所有波長展現大體上相同的透射比。
  4. 如請求項1所述的裝置，其特徵在於：所述透射導體針對可見光譜中的一些波長展現大體高於所述可見光譜中的其它波長的透射比。
  5. 如請求項4所述的裝置，其特徵在於：所述透射導體包括：在紅色區域中展現主透射峰值的至少一個透射導體；在藍色區域中展現主透射峰值的至少一個透射導體；以及在藍色區域中展現主透射峰值的至少一個透射導體。
  6. 如請求項1所述的裝置，其特徵在於：所述層的堆疊包含：源極-漏極導體圖案，其限定源極導體陣列和漏極導體陣列；以及半導體溝道材料，其在溝道區域中連接所述源極和漏極導體，在所述溝道區域中，所述源極和漏極導體最近處；並且其中所述裝置在所述第一導體層級處在所述溝道區域中另外包括不透射導體，其中所述不透射導體在所述可見光譜內大體上不透射。
  7. 如請求項6所述的裝置，其特徵在於：所述不透射導體在所述第一導體層級內與所述透射導體隔離。
  8. 如請求項6所述的裝置，其特徵在於：所述不透射導體和透射導體在所述第一導體層級內彼此接觸。
  9. 如請求項6所述的裝置，其特徵在於：所述透射導體包括一種或多種導電金屬氧化物材料，且所述不透射導體包括一種或多種金屬材料。
  10. 如請求項1至6中任一項所述的裝置，其特徵在於：所述不透射導體包括一種或多種金屬材料，並且限定週期性納米孔陣列。
  11. 一種操作如前述請求項中任一項所述的裝置的方法，其特徵在於：包括向所述透射導體施加一個或多個電壓，所述一個或多個電壓促進所述透射導體與所述像素電極的電容耦合。
  12. 如請求項11所述的方法，其特徵在於：包括：向所有透射導體施加共同電壓，所述共同電壓促進所述透射導體與所述像素電極的電容耦合。
  13. 一種操作如請求項1至10中任一項所述的裝置的方法，其特徵在於：包括使用所述透射導體來增加所述像素電極的存儲電容。
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CN107229168A (zh) * 2017-06-01 2017-10-03 昆山龙腾光电有限公司 显示面板的阵列基板及显示装置

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