TW202015196A - 層流裝置 - Google Patents

層流裝置 Download PDF

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TW202015196A
TW202015196A TW107135885A TW107135885A TW202015196A TW 202015196 A TW202015196 A TW 202015196A TW 107135885 A TW107135885 A TW 107135885A TW 107135885 A TW107135885 A TW 107135885A TW 202015196 A TW202015196 A TW 202015196A
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laminar flow
flow device
main body
air
zigzag structure
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TW107135885A
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胡石政
林廸
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國立臺北科技大學
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Priority to TW107135885A priority Critical patent/TW202015196A/zh
Priority to US16/237,733 priority patent/US20200118810A1/en
Priority to CN201910005361.8A priority patent/CN111048455A/zh
Priority to JP2019000125A priority patent/JP2020061538A/ja
Publication of TW202015196A publication Critical patent/TW202015196A/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover

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Abstract

本發明提出一種層流裝置,包含:一ㄇ字形結構,該ㄇ字形結構由三個平面板體構成;一側蓋,設置於該ㄇ字形結構的開口處,該側蓋及該ㄇ字形結構結合形成一主體,該主體上方和下方呈開放狀態;一上蓋,設置於該主體上方;至少一進氣孔,設置於該主體,該至少一進氣孔填充一潔淨氣體;以及至少一透氣板,裝設於該主體內部,該至少一透氣板具有複數個透氣孔隙,用以產生一均勻氣流。

Description

層流裝置
本發明係關於一種可產生均勻氣流的層流裝置,尤指一種設置於晶圓傳送盒與製程環境間的層流裝置,用以阻擋外部汙染物進入該晶圓傳送盒。
在半導體製造過程中,而晶圓是一種生產積體電路所使用的高精密度半導體材料,其表面必需保持高潔淨度,不可接觸水氣、微粒或其他氣態污染物;因此,晶圓在各個製程設備上需儲存於晶圓傳送盒內,使得盒體內之晶圓不會被前述之汙染物汙染。
請參照圖1,其為習知晶圓傳送盒與製程環境間的示意圖。如圖1所示,前述之晶圓傳送盒7通常存放於製程環境中,當其盒體7內的晶圓70需要取出,而使晶圓傳送盒7的開口72開啟時,製程環境中潔淨度等級較低的汙染物80會隨著引流侵入晶圓傳送盒7內,造成晶圓70表面污染損傷而影響其品質良率。為了避免開啟晶圓傳送盒7之開口82,或晶圓傳送盒7及製程環境間的門口時,外部汙染物80侵入晶圓傳送盒7而污染內部晶圓70,提出一種設置於晶圓傳送盒7及製程環境之間,且可產生均勻氣流以提升汙染物阻絕效果的裝置尤其重要。
為了藉決上述的各項缺失,本發明提出一種層流裝置,包含一ㄇ字型結構,該ㄇ字型結構是由三個長條型的平面板體所構成;一側蓋,設置於ㄇ字形結構的前端開口處,該側蓋及該ㄇ字形結構結合形成一主體,且主體的上方和下方呈現開放狀態;一上蓋,設置於該主體的上方;至少一進氣孔,設置於該主體,該至少一進氣孔填充一潔淨氣體;以及至少一透氣板,裝設於該主體的內部,該至少一透氣板具有複數個孔隙,使得該潔淨氣體透出至少一透氣板而產生一均勻氣流。
進一步而言,該至少一透氣板的材質為吸水率介於0.1-5%的燒結聚合材料。
進一步而言,該ㄇ字型結構的長條型的三個平面板體可以是一體成形的結構,也可以透過鎖固件及相對應的螺孔結合,或是以相互膠合、卡合或壓合的方式形成ㄇ字型結構。而該主體和該上蓋據亦可透過相對應的複數個螺孔以及鎖固件,使得該主體和該上蓋能夠被鎖合。
以上對本發明的簡述,目的在於對本發明之數種面向和技術特徵作一基本說明。發明簡述並非對本發明的詳細表述,因此其目的不在特別列舉本發明的關鍵性或重要元件,也不是用來界定本發明的範圍,僅為以簡明的方式呈現本發明的數種概念而已。
為能瞭解本發明的技術特徵及實用功效,並可依照說明書的內容來實施,茲進一步以如圖式所示的較佳實施例,詳細說明如後:
首先,請參考第二圖所示,其為本發明較佳實施例之層流裝置示意圖。本實施例之層流裝置1主要包含:一ㄇ字型結構10,該ㄇ字型結構10是由三個長條型的平面板體所構成;一側蓋20,設置於ㄇ字形結構10的前端開口處,該側蓋20及該ㄇ字形結構10結合形成一主體,且主體的上方和下方呈現開放狀態;一上蓋30,設置於該主體上方;至少一進氣孔32,設置於該主體,該至少一進氣孔32用以填充一潔淨氣體;以及至少一透氣板40,裝設於該主體的內部,且該至少一透氣板40具有複數個孔隙,使得該潔淨氣體穿透出至少一透氣板的孔隙而在主體的下方產生一均勻氣流。
其中,該ㄇ字型結構10的三個長條型的平面板體可以是一體成形的結構,也可以是透過鎖固件(圖未示)及相對應的螺孔11結合,或是以相互膠合、卡合或壓合等方式形成本實施例之ㄇ字型結構10。
該側蓋20及該ㄇ字形結構10亦可以是一體成形的結構,也可以透過鎖固件及相對應的螺孔11、21結合或是以相互膠合、卡合或壓合等方式形成本實施例之主體。
而該主體和該上蓋30亦可透過相對應的複數個螺孔11、21、31以及鎖固件,使得該主體和該上蓋30能夠被鎖合,該主體和該上蓋30也可以透過上述相互膠合、卡合或壓合等方式固定。
在本實施例中,該至少一進氣孔32設置的位置於主體的上蓋30上,並從上蓋30的至少一進氣孔32填充一潔淨氣體;在另一實施樣態中,該至少一進氣孔32的位置還可以設於該側蓋20上(請參照第三圖),並從側蓋20的至少一進氣孔32填充一潔淨氣體而形成側吹。本發明之至少一進氣孔32具體的設置位置可依據吹送需求進行調整,本發明並不依此為限。
在本實施例中,該ㄇ字形結構10和該側蓋20的內表面還具有相對應的至少一橫向凹槽12,該至少一透氣板40是裝設於該ㄇ字形結構10及該側蓋20內表面之該至少一橫向凹槽12所連接形成的至少一環狀凹槽中固定,每一個橫向凹槽12的寬度是略大於透氣板厚度。此結構設計的重點在於,當使用者欲替換不同孔隙大小的透氣板40,僅需將設於主體前方的側蓋20拆除後,將透氣板40安裝固定至ㄇ字形結構10內表面之橫向凹槽12,再將側蓋20內表面之橫向凹槽對應至該透氣板40後鎖固即可。
而透氣板40固定於本體內部的方式,除了上述固定在該ㄇ字形結構10及該側蓋20內表面之該至少一橫向凹槽12所連接形成的至少一環狀凹槽之外,還可以透過膠合的方式直接固定於層流裝置1的本體內部。
在本實施例中,透氣板40的厚度介於3至10毫米(例如是5毫米),其材質為吸水率小於0.1-5%且具有疏水性的燒結聚合材料,該燒結聚合材料可以是超高分子聚乙烯(Ultra-high-molecular-weight polyethylene, UPE)、高分子聚乙烯其中,超高分子聚乙烯具有高度的韌性與耐衝擊度,同時具有抗腐蝕、抗化學性以及極低的磨擦係數和吸水性,其表面具有吸水性,水在透氣板表面的接觸角介於100°-130°(例如是113°),且不存在滑動角(在360°內旋轉水珠皆無滑動)。
進一步而言,透氣板40上該複數個孔隙的孔徑大小介於0.01至100微米(μm),且透氣板40的邊緣具有至少一凹凸結構42(請參考第三圖)而形成鋸齒狀邊緣的透氣板40,鋸齒狀邊緣可以使透氣板40在與主體或環狀凹槽中膠合時,方便透氣板40定位於主體或環狀凹槽中,並同時增加透氣板40與黏膠之間的接觸表面,使其能夠更穩固地膠合。
除此之外,請參照第四圖,其為本發明再一較佳實施例之層流裝置示意圖。本實施例之層流裝置1與第二圖的差異在於,層流裝置1的上蓋還可具有至少一固定件50,而該至少一固定件50與該上蓋30可以是一體成形的結構,也可以透過鎖固件及相對應的螺孔可拆卸式的結合,或是以相互膠合、卡合或壓合等方式固定。該至少一固定件60的目的在於,固定層流裝置1在特定位置,例如製程開口或門閥上。
請參考第五圖所示,其為本發明之層流裝置的均勻氣流效果示意圖。將本發明之層流裝置1透過至少一固定件50安裝在製程轉換的開口2上方,並自可安裝有進氣閥及流量調節裝置(圖未示)的進氣孔32向主體填充一潔淨氣體,例如潔淨乾空氣(CDA)或惰性氣體;當潔淨氣體由上蓋30或側蓋(請參考第三圖)可安裝有進氣閥之進氣孔32填充至主體內部時,由於透氣板40(請參考第二圖)具有的孔隙極小,氣體受到阻力而在主體內部形成壓阻,直至內部壓力高到一定程度(最大靜壓)時,氣體整流後會通過透氣板40的複數個孔隙,由主體下方之開放區域(即出風口)向下排出,而在晶圓傳送盒3與製程環境連接的開口2處產生一均勻氣流60,以阻隔外部汙染物(如水氣、微粒等)在取出晶圓時(意即開口2開啟時)進入晶圓傳送盒3內部造成污染。
而前述之均勻氣流60的出風寬度是取決於主體或透氣板40的面積,若面積過小,可能導致氣流不容易集中,而無法吹拂至晶圓傳送盒3底層;面積過大則會耗費不必要的氣體。因此,請同時參考第二圖,本發明之層流裝置1的主體,寬度W可以是介於10-100毫米(例如是70毫米),進氣孔32的直徑可以是介於6-15毫米(例如是8毫米)。
至於主體內部壓阻的大小則取決於透氣板40的數量及其透氣孔隙的大小,以能達到氣體整流及均勻排出為基準,本發明層流裝置1的每一個透氣板40的孔隙大小為0.01至100微米(μm)。若孔隙太大可能導致壓阻不足而不具有整流及均流效果;孔隙太小則有可能因內部壓阻過大而導致潔淨乾空氣或惰性氣體無法流出。
透過本發明之層流裝置所產生之氣流,其雷諾數介於1000至2000之間(平均流速介於0.25-0.35公尺/秒,水力直徑(一般為特性長度)介於7-9公分),且出風皆為均勻層流(Laminar Flow),可阻絕任何的汙染物,如水氣、氨氣(NH3 )、氯氣(Cl2 )、氫氟酸(HF)或氫氯酸(HCl)等氣體或微粒進入晶圓傳送盒內;結合現有的晶圓傳送盒迫淨系統,可大幅降低在取放晶圓(開口開啟)時外部汙染物侵入晶圓傳送盒的可能性。
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即依本發明申請專利範圍及說明內容所作之簡單變化與修飾,皆仍屬本發明涵蓋之範圍內。
1:層流裝置2:開口3:晶圓傳送盒10:ㄇ字形結構11:螺孔12:凹槽20:側蓋21:螺孔30:上蓋31:螺孔32:進氣孔40:透氣板42:凹凸結構50:固定件60:均勻氣流7:晶圓傳送盒70:晶圓72:開口8:汙染物W:寬度
第一圖為習知晶圓傳送盒與製程環境間的示意圖。
第二圖為本發明較佳實施例之層流裝置示意圖。
第三圖為本發明另一較佳實施例之層流裝置示意圖。
第四圖為本發明再一較佳實施例之層流裝置示意圖。
第五圖為本發明較佳實施例之透氣板示意圖。
第六圖為本發明較佳實施例之層流裝置的均勻氣流效果示意圖
1:層流裝置
10:ㄇ字形結構
11:螺孔
12:凹槽
20:側蓋
21:螺孔
30:上蓋
31:螺孔
32:進氣孔
40:透氣板
W:寬度

Claims (10)

  1. 一種層流裝置,包含: 一ㄇ字形結構,該ㄇ字形結構由三個平面板體構成; 一側蓋,設置於該ㄇ字形結構的開口處,該側蓋及該ㄇ字形結構結合形成一主體,且該主體的上方和下方呈開放狀態; 一上蓋,設置於該主體的上方; 至少一進氣孔,設置於該主體,該至少一進氣孔填充一潔淨氣體;以及 至少一透氣板,裝設於該主體內部,該至少一透氣板具有複數個透氣孔隙,用以產生一均勻氣流; 其中,該至少一透氣板的材質為吸水率介於0.1-5%的燒結聚合材料。
  2. 如請求項1所述之層流裝置,其中該ㄇ字形結構為一體成形。
  3. 如請求項1所述之層流裝置,其中該主體及該上蓋具有相對應的複數個螺孔,使該主體及該上蓋能夠被鎖合。
  4. 如請求項1所述之層流裝置,其中該複數個透氣孔隙的孔徑大小為0.01至15微米(μm)。
  5. 如請求項1所述之層流裝置,其中該ㄇ字形結構及該側蓋的內表面具有相對應的至少一橫向凹槽。
  6. 如請求項5所述之層流裝置,其中該至少一透氣板裝設於該ㄇ字形結構及該側蓋內表面之該至少一橫向凹槽所連接形成的至少一環狀凹槽內。
  7. 如請求項1所述之層流裝置,其中每一個透氣板的邊緣具有至少一凹凸結構。
  8. 如請求項1所述之層流裝置,其中該潔淨氣體為潔淨乾空氣(CDA)或惰性氣體。
  9. 如請求項1所述之層流裝置,其中該均勻氣流的雷諾數介於1000至2000。
  10. 如請求項1所述之層流裝置,其中該主體更設有一可拆卸式的固定件。
TW107135885A 2018-10-12 2018-10-12 層流裝置 TW202015196A (zh)

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TW107135885A TW202015196A (zh) 2018-10-12 2018-10-12 層流裝置
US16/237,733 US20200118810A1 (en) 2018-10-12 2019-01-01 Laminar flow device
CN201910005361.8A CN111048455A (zh) 2018-10-12 2019-01-03 层流装置
JP2019000125A JP2020061538A (ja) 2018-10-12 2019-01-04 層流装置

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