TW202006874A - 開槽靜電吸盤 - Google Patents

開槽靜電吸盤 Download PDF

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TW202006874A
TW202006874A TW108120986A TW108120986A TW202006874A TW 202006874 A TW202006874 A TW 202006874A TW 108120986 A TW108120986 A TW 108120986A TW 108120986 A TW108120986 A TW 108120986A TW 202006874 A TW202006874 A TW 202006874A
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electrostatic chuck
assembly
groove
semiconductor wafer
end effector
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艾維 巴倫
江浩然
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美商克萊譚克公司
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    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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Abstract

本發明提供一種用於夾持半導體晶圓之組合件，該組合件包含一板及經安裝於該板上之一靜電吸盤。複數個槽在該靜電吸盤之各自部分之間延伸以接納一晶圓處置器之一末端效應器的臂。該末端效應器之該等臂支撐被放置到該靜電吸盤上及自該靜電吸盤移除的半導體晶圓。

Description

開槽靜電吸盤
本發明係關於半導體晶圓處置，且更具體而言係關於一種具有用於晶圓處置之槽之靜電晶圓夾盤。
靜電晶圓吸盤或簡稱靜電吸盤用於半導體製造設備中以固持晶圓。一靜電吸盤使用高電壓來產生一靜電力，該靜電力將一半導體晶圓夾持至該吸盤。傳統上，靜電吸盤使用升降銷來裝載及卸載晶圓。當裝載一晶圓時，升降銷自靜電吸盤上升，自一晶圓處置器之一末端效應器接納晶圓，且接著下降，直至晶圓擱置於吸盤表面上。當卸載一晶圓時，升降銷上升以將晶圓升高至吸盤表面上方，使得晶圓處置器之末端效應器可在晶圓與吸盤表面之間滑動以拾取晶圓。然而，使用升降銷會產生若干問題。升降銷需要晶圓上方之行進空間且需要一z形載物台或其他行進機構來提升銷，此增加系統之重量及複雜性。再者，升降銷之行進時間降低輸送量。
據此，需要用於自一靜電吸盤裝載及卸載半導體晶圓之更有效方法及系統。可藉由對靜電吸盤開槽來達成此等方法及系統。
在一些實施例中，一種用於夾持半導體晶圓之組合件包含一板及安裝於該板上之一靜電吸盤。複數個槽在該靜電吸盤之各自部分之間延伸以接納一晶圓處置器之一末端效應器之臂。該末端效應器之該等臂支撐放置至該靜電吸盤上及自該靜電吸盤移除之半導體晶圓。
在一些實施例中，一種處置半導體晶圓之方法包含在一晶圓處置器之一末端效應器之臂上支撐一半導體晶圓。在該末端效應器之該等臂上支撐該半導體晶圓之情況下，藉由將該末端效應器之該等臂定位於該靜電吸盤之部分之間延伸之各自槽中來將該半導體晶圓放置至一靜電吸盤上。在該半導體晶圓位於該靜電吸盤上之情況下，自該等各自槽抽出該末端效應器之該等臂。將該半導體晶圓夾持至該靜電吸盤。將該半導體晶圓夾持至該靜電吸盤包含偏置該靜電吸盤。
本申請案主張2018年6月19日申請之標題為「Slotted Monolithic Mirror Plate with Electrostatic Chuck」之美國臨時專利申請案第62/687,017號的優先權，該案之全文出於所有目的係以引用的方式併入本文。
現將詳細參考在隨附圖式中繪示其等實例之各項實施例。在下文詳細描述中，闡述眾多特定細節以便提供對各項所描述之實施例之一透徹理解。然而，對於一般技術者將顯而易見的是，可在沒有此等特定細節之情況下實踐各項所描述之實施例。在其他情況下，未詳細描述熟知方法、程序、組件、電路及網路以免不必要地模糊實施例之態樣。
圖1係根據一些實施例之用於夾持半導體晶圓之一組合件100之一透視圖。用於半導體製造設備中之組合件100包含經安裝於一板102上之一開槽靜電吸盤。開槽靜電吸盤包含經安裝於板102上且由槽106-1及106-2分離的三個靜電吸盤(「電子吸盤」)部分104-1、104-2及104-3。槽106-1及106-2經定大小以接納一晶圓處置器之一末端效應器的臂(例如，圖5之一末端效應器500的臂502及504)。末端效應器臂用來將半導體晶圓放置到開槽靜電吸盤上且自開槽靜電吸盤移除半導體晶圓：在裝載或移除一晶圓時，臂支撐該晶圓。在一些實施例中，部分104-1、104-2及104-3係相異吸盤表面；槽106-1及106-2完全跨靜電吸盤延伸，且因此將靜電吸盤分成具有相異表面的相異部分。在圖1之實例中，槽106-1位於部分104-1與104-2之間，且槽106-2位於部分104-2與104-3之間。替代地，該等槽之一者或兩者可僅在靜電吸盤之中途延伸，使得一些或所有部分係連接的。無論如何，組合件100係單片組合件，因為部分104-1、104-2及104-3係安裝於板102上。部分104-1、104-2及104-3經共面(例如，部分104上之檯面404 (圖4)係共面的)至一指定程度內(例如，至10微米內)，以確保晶圓可均勻地擱置於靜電吸盤上。部分104-1、104-2及104-3以及槽106-1及106-2共同經定大小以接納及支撐一指定直徑(例如，300 mm)之半導體晶圓。雖然圖1繪示具有兩個槽106及三個部分104之一靜電吸盤，但槽及對應部分的數目可變化。
部分104之各者及因此靜電吸盤之各相異表面可被分成一或多個電極區域108及絕緣體110。絕緣體110環繞電極區域108之各者。在圖1之實例中，部分104-1包含由絕緣體110環繞之單個電極區域108-1，部分104-2包含由絕緣體110環繞之兩個電極區域108-2及108-3，且部分104-3包含由絕緣體110環繞之單個電極區域108-4。電極區域108可被分成一或多個(例如，兩個)電極區域之群組，各電極區域群組可獨立地經偏置以夾持一半導體晶圓。
在一些實施例中，板102係一鏡板，使得其側之一或多者係鏡(例如，用於將板定位於一片半導體製造設備內之雷射干涉儀鏡)。例如，板102包含用於將板102定位於一第一方向(例如，x方向，或替代地y方向)上之一鏡面118，及/或用於將板102定位於一第二方向(例如，y方向，或替代地x方向)上之一鏡面120。
在一些實施例中，一開口114經定位於板102之一側(例如，在鏡面118中，其經切割以形成開口)且連同槽106-1及106-2定大小，以容納末端效應器。開口114自該板之側延伸至槽106-1及106-2，且亦延伸至部分104-2之一邊緣116，邊緣116在槽106-1與106-2之間延伸。(等效地，槽106-1及106-2可被認為延伸至板102之側且由開口114接合)。槽106-1及106-2以及開口114有效地組成一實質上U形槽以接納末端效應器之臂。(U形槽並非恰好U形，因為(例如)板之側係直的，且邊緣116與槽106-1及106-2相交之角可為銳角，但仍可辨識為U。)開口114具有如自板102之側之頂部(例如，鏡面118之頂部)測量、等於槽106-1及106-2之深度之一深度。
在一些實施例中，一凹槽112環繞靜電吸盤(例如，部分104-1、104-2及104-3)。凹槽112可與開口114、槽106-1之各端(或替代地，單個端)及槽106-2之各端(或替代地，單個端)相交。在圖1之實例中，凹槽112 (即，凹槽112中相異於開口114以及槽106-1及106-2之部分)具有小於開口114以及槽106-1及106-2之深度之一深度。凹槽112可用來識別靜電吸盤之位置且因此確保半導體晶圓恰當地放置至靜電吸盤上。
組合件100之各種元件之尺寸可針對不同實施例而變化。在一些實施例中，槽106-1及106-2以及開口114之深度係10 mm，槽106-1及106-2之寬度係23 mm，槽112之深度及/或寬度係4 mm，及/或凹槽112經定大小以環繞一環繞300 mm晶圓。
靜電吸盤之一各自部分中之電極區域之配置亦可針對不同實施例而變化。圖2係根據一些實施例之用於夾持半導體晶圓之一組合件200之頂部之一透視圖，其中部分104-2之電極區域108-2及108-3係用電極區域208-2及208-3替換。電極區域208-2及208-3彼此電隔離且與電極區域108-1及108-4電隔離，且可彼此獨立地偏置。電極區域208-2及208-3之各者(如同電極區域108)可由絕緣體110環繞。例如，電極區域108-1及208-2 (或108-1及208-3)可電連接使得其等可經偏置至一第一偏置電壓，而電極區域208-3及108-4 (或208-2及108-4)可電連接使得其等可經偏置至一第二偏置電壓。
在組合件200中，根據一些實施例，凹槽112由一凹槽212替換，凹槽212具有等於槽106-1及106-2以及開口114之深度之一深度。使用相同深度(例如，10 mm)之凹槽212、槽106-1及106-2以及開口114避免凹槽212與槽106-1及106-2相交之銳角，此係在一靜電吸盤之高電壓環境中所期望的。
圖3係根據一些實施例之組合件200之底部之一透視圖。一電連接器318經附接至板102之底部。佈線302自電連接器318延伸至連接至電極區域108-1及208-2 (圖2)之電接觸件304。佈線306自電連接器318延伸至連接至電極區域108-4及208-3 (圖2)之電接觸件308。佈線302用來將一第一偏置電壓施加至電極區域108-1及208-2，而佈線306用來將一第二偏置電壓施加至電極區域108-4及208-3。第一偏置電壓及第二偏置電壓係單獨、獨立偏置電壓。其他佈線310及314自電連接器318延伸至各自電接觸件312及316，電接觸件312及316連接至板102且用來偏置板102之特徵。例如，佈線314及接觸件316用來將一第三偏壓施加至板102之表面(例如，包含開口114、槽106及槽112/212，圖1至圖2)。第三偏置電壓不同且獨立於第一偏置電壓及第二偏置電壓。
圖4展示根據一些實施例之一組合件(例如，組合件100或200，圖1至圖3)之一截面400。一靜電吸盤部分104靠近一槽106或一凹槽112/212。部分104包含一頂部介電質層402 (例如，一第一玻璃層)，介電質層402下方之一導電電層406，及電層406下方之一絕緣層408 (例如，一第二玻璃層)。在一些實施例中，介電質層402在其表面上包含檯面404，檯面404支撐定位於靜電吸盤上之一半導體晶圓。在一些實施例中，電層406不延伸至部分104之邊緣。代替地，電層406終止於邊緣之前(即，在部分104與槽106或槽112/212之間的介面之前)。部分104之邊緣區域(其中缺乏電層406且介電質層402接觸絕緣部分408)對應於絕緣體110 (圖1至圖2)。電層406之範圍界定部分104中之一電極區域108/208。根據一些實施例，各電極區域108/208因此包含位於一介電質層402下方之一各自電層406。
使用一膠層410將部分104安裝於板102 (例如，一鏡板)上。例如，部分104-1、104-2及104-3之各者(圖1至圖2)以及因此各相異吸盤表面使用一各自膠層410單獨膠合至板102。一導電通孔412 (例如，經填充有導電膠之一通孔)延伸穿過板100、膠層410及絕緣層408，以將電層406電連接至一接觸件304或308 (圖3)。因此，電層406係透過導電通孔412、一或多個接觸件304或308及佈線302或306電連接至電連接器318。
圖5係根據一些實施例之一晶圓處置器之一末端效應器500之一平面視圖。末端效應器包含一起可支撐一半導體晶圓之一第一臂502及一第二臂504。槽106-1及106-2經定大小以接納臂502及504。
圖6係繪示根據一些實施例之處置半導體晶圓之一方法600之一流程圖。在方法600中，於一晶圓處置器之一末端效應器(例如，圖5之臂502及504)之臂上支撐一半導體晶圓(602)。在末端效應器之臂上支撐半導體晶圓的情況下，將半導體晶圓放置(604)到一靜電吸盤上。為了將半導體晶圓放置到靜電吸盤上，將末端效應器之臂定位在於靜電吸盤之部分(例如，圖1至圖2之部分104-1、104-2及104-3)之間延伸的各自槽(例如，圖1至圖2之槽106-1及106-2)中。在一些實施例中，靜電吸盤包含(606)被分成一第一群組(例如，圖2之部分108-1及208-2，)及一第二群組(例如，圖2之部分108-4及208-3)的複數個相異電極區域(例如，圖1至圖2之電極區域108/208)。在一些實施例中，於一板(例如，圖1至圖4之板102，其可為一鏡板)上安裝(608)靜電吸盤。
在半導體晶圓位於靜電吸盤上之情況下，自各自槽抽出(610)末端效應器之臂。將半導體晶圓夾持(612)至靜電吸盤。將半導體晶圓夾持至靜電吸盤包含偏置靜電吸盤。在一些實施例中，將一第一偏置電壓施加(614)至第一群組中之電極區域，且將一第二偏置電壓施加(614)至第二群組中之電極區域。在一些實施例中，將半導體晶圓夾持至靜電吸盤進一步包含將一第三偏置電壓施加(616)至板。例如，首先(例如)透過佈線314及接觸件316 (圖3)將板(例如，板102之外表面)偏置至第三偏置電壓(例如，10 kV)。接著將第一群組及第二群組中之電極區域調諧至其等各自之第一偏置電壓及第二偏置電壓(例如，分別係11.5 kV及8.5 kV)。例如，透過佈線302及接觸件304來偏置第一群組中之電極區域，且透過佈線306及接觸件308來偏置第二群組中之電極區域(圖3)，或反之亦然。
在將半導體晶圓夾持至靜電吸盤之情況下，執行半導體晶圓之處理及/或特性化。一旦處理及/或特性化完成，即可卸載半導體晶圓。為了卸載半導體晶圓，自靜電吸盤鬆開(618)半導體晶圓。鬆開半導體晶圓包含停止偏置(618)靜電吸盤。在一些實施例中，鬆開半導體晶圓進一步包含停止偏置板。將末端效應器之臂插入(620)至各自槽中。在將半導體晶圓自靜電吸盤鬆開且將末端效應器之臂至插入至各自槽中之情況下，升高(622)末端效應器之臂以將半導體晶圓提離靜電吸盤。
可重新排序方法600中之順序無關步驟且可組合或分解步驟。
方法600及組合件100/200提供多個益處。用於裝載及卸載晶圓之吸盤上方之空間可小於使用升降銷時所需之空間。消除與升降銷相關之行進時間，因此減少晶圓處置時間且增加輸送量。避免用來升高及降低升降銷之z載物台或其他升降銷機構，因此降低重量及複雜性。
出於解釋目的，已參考特定實施例描述前文描述。然而，上文闡釋性討論並非意欲於窮舉性或將發明申請專利範圍之範疇限於所揭示之精確形式。鑑於上述教示，諸多修改及變動係可能的。選擇實施例係為了最好地解釋發明申請專利範圍及其實際應用之基本原理，由此使熟習此項技術者能夠最好地使用具有適合於預期特定用途之各種修改之實施例。
100‧‧‧組合件 102‧‧‧板 104-1‧‧‧靜電吸盤(「電子吸盤」)部分 104-2‧‧‧靜電吸盤(「電子吸盤」)部分 104-3‧‧‧靜電吸盤(「電子吸盤」)部分 106-1‧‧‧槽 106-2‧‧‧槽 108-1‧‧‧電極區域 108-2‧‧‧電極區域 108-3‧‧‧電極區域 108-4‧‧‧電極區域 110‧‧‧絕緣體 112‧‧‧凹槽 114‧‧‧開口 116‧‧‧邊緣 118‧‧‧鏡面 120‧‧‧鏡面 200‧‧‧組合件 208-2‧‧‧電極區域 208-3‧‧‧電極區域 212‧‧‧凹槽 302‧‧‧佈線 304‧‧‧電接觸件 306‧‧‧佈線 308‧‧‧電接觸件 310‧‧‧佈線 312‧‧‧電接觸件 314‧‧‧佈線 316‧‧‧電接觸件 318‧‧‧電連接器 400‧‧‧截面 402‧‧‧頂部介電質層 404‧‧‧檯面 406‧‧‧導電電層 408‧‧‧絕緣層/絕緣部分 410‧‧‧膠層 412‧‧‧導電通孔 500‧‧‧末端效應器 502‧‧‧第一臂 504‧‧‧第二臂 600‧‧‧方法 602‧‧‧步驟 602‧‧‧步驟 604‧‧‧步驟 606‧‧‧步驟 608‧‧‧步驟 610‧‧‧步驟 612‧‧‧步驟 614‧‧‧步驟 616‧‧‧步驟 618‧‧‧步驟 620‧‧‧步驟 622‧‧‧步驟
為了更好地理解各項所描述之實施例，應結合以下圖式參考下文[實施方式]。
圖1及圖2係根據一些實施例之用於夾持半導體晶圓之組合件之透視圖。
圖3係根據一些實施例之圖2之組合件之底部之一透視圖。
圖4展示根據一些實施例之一組合件(諸如圖1或圖2之組合件)之一截面。
圖5係根據一些實施例之一晶圓處置器之一末端效應器之一平面視圖。
圖6係展示根據一些實施例之處置半導體晶圓之一方法之一流程圖。
貫穿圖式及說明書，類似元件符號指代對應部件。
102‧‧‧板
104-1‧‧‧靜電吸盤(「電子吸盤」)部分
104-2‧‧‧靜電吸盤(「電子吸盤」)部分
104-3‧‧‧靜電吸盤(「電子吸盤」)部分
106-1‧‧‧槽
106-2‧‧‧槽
108-1‧‧‧電極區域
108-4‧‧‧電極區域
110‧‧‧絕緣體
114‧‧‧開口
118‧‧‧鏡面
200‧‧‧組合件
208-2‧‧‧電極區域
208-3‧‧‧電極區域
212‧‧‧凹槽

Claims (20)

  1. 一種用於夾持半導體晶圓之組合件，其包括： 一板； 一靜電吸盤，其經安裝於該板上；及 複數個槽，其等在該靜電吸盤之各自部分之間延伸以接納一晶圓處置器之一末端效應器之臂，其中該末端效應器之該等臂係用來支撐被放置到該靜電吸盤上及自該靜電吸盤移除的半導體晶圓。
  2. 如請求項1之組合件，其中： 該靜電吸盤之該等各自部分包括相異吸盤表面，其中該等相異吸盤表面之各者經安裝於該板上；及 該複數個槽將該靜電吸盤分成該等相異吸盤表面。
  3. 如請求項2之組合件，其中該等相異吸盤表面係共面至10微米內。
  4. 如請求項2之組合件，其中： 該等相異吸盤表面之各者包括一或多個電極區域及絕緣體； 該一或多個電極區域之各者包括位於一介電質層下方之一各自導電層；且 該絕緣體環繞該一或多個電極區域之各者。
  5. 如請求項2之組合件，其中： 該等相異吸盤表面包括第一吸盤表面、第二吸盤表面，及第三吸盤表面； 該複數個槽包括一第一槽及一第二槽； 該第一槽位於該第一吸盤表面與該第二吸盤表面之間；及 該第二槽位於該第二吸盤表面與該第三吸盤表面之間。
  6. 如請求項5之組合件，進一步包括該板之一側上之一開口，該開口自該板之該側延伸至該第一槽、該第二槽及該第一槽與該第二槽之間之該第二吸盤表面之一邊緣； 其中該第一槽、該第二槽及該開口組成一實質上U形槽，以接納該末端效應器之該等臂。
  7. 如請求項6之組合件，進一步包括在該板中環繞該靜電吸盤之一凹槽，其中該凹槽與該開口、該第一槽之各端及該第二槽之各端相交。
  8. 如請求項7之組合件，其中該凹槽、該開口、該第一槽及該第二槽具有相同深度。
  9. 如請求項5之組合件，其中： 該第一吸盤表面包括一第一電極區域； 該第二吸盤表面包括一第二電極區域及一第三電極區域，其中該第二電極區域及該第三電極區域係彼此電隔離；及 該第三吸盤表面包括一第三電極區域。
  10. 如請求項9之組合件，其中： 該第一電極區域及該第二電極區域係電連接的；及 該第三電極區域及該第四電極區域係電連接的。
  11. 如請求項10之組合件，進一步包括： 一電連接器，其經附接至該板； 第一佈線，其經連接至該電連接器以將一第一偏置電壓施加至該第一電極區域及該第二電極區域；及 第二佈線，其經連接至該電連接器以將一第二偏置電壓施加至該第三電極區域及該第四電極區域。
  12. 如請求項11之組合件，進一步包括第三佈線，該第三佈線經連接至該電連接器及該板以將一第三偏置電壓施加至該板。
  13. 如請求項2之組合件，其中該等相異吸盤表面經膠合至該板。
  14. 如請求項1之組合件，其中該板係在該板之各自側上包括複數個鏡面之一鏡板，該複數個鏡面係用於定位該板之雷射干涉儀鏡。
  15. 如請求項1之組合件，進一步包括在該板中環繞該靜電吸盤之一凹槽，其中該凹槽與該複數個槽相交。
  16. 如請求項15之組合件，其中該凹槽及該複數個槽具有相同深度。
  17. 一種處置半導體晶圓之方法，其包括： 在一晶圓處置器之一末端效應器之臂上支撐一半導體晶圓； 在該末端效應器之該等臂上支撐該半導體晶圓之情況下，將該半導體晶圓放置到一靜電吸盤上，包括將該末端效應器之該等臂定位於該靜電吸盤之部分之間延伸的各自槽中； 在該半導體晶圓位於該靜電吸盤上之情況下，自該等各自槽抽出該末端效應器之該等臂；及 將該半導體晶圓夾持至該靜電吸盤，包括偏置該靜電吸盤。
  18. 如請求項17之方法，進一步包括：在自該等各自槽抽出該末端效應器之該等臂且將該半導體晶圓夾持至該靜電吸盤之後： 自該靜電吸盤鬆開該半導體晶圓，包括停止偏置該靜電吸盤； 將該末端效應器之該等臂插入至該等各自槽中；及 在將該半導體晶圓自該靜電吸盤鬆開且將該末端效應器之該等臂插入至該等各自槽中之情況下，升高該末端效應器之該等臂以將該半導體晶圓提離該靜電吸盤。
  19. 如請求項17之方法，其中： 該靜電吸盤包括分成一第一群組及一第二群組之複數個相異電極區域；且 偏置該靜電吸盤包括將一第一偏置電壓施加至該第一群組中之該等電極區域，且將一第二偏置電壓施加至該第二群組中之該等電極區域。
  20. 如請求項19之方法，其中： 在一板上安裝該靜電吸盤；及 將該半導體晶圓夾持至該靜電吸盤進一步包括將一第三偏置電壓施加至該板。
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WO2019245791A1 (en) 2019-12-26
US20190385882A1 (en) 2019-12-19
KR102481588B1 (ko) 2022-12-26
TWI800659B (zh) 2023-05-01
IL279285B2 (en) 2023-07-01
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US11121019B2 (en) 2021-09-14
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