TW202006838A - 封裝及形成封裝的方法 - Google Patents
封裝及形成封裝的方法 Download PDFInfo
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- TW202006838A TW202006838A TW108113532A TW108113532A TW202006838A TW 202006838 A TW202006838 A TW 202006838A TW 108113532 A TW108113532 A TW 108113532A TW 108113532 A TW108113532 A TW 108113532A TW 202006838 A TW202006838 A TW 202006838A
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Abstract
本發明提供一種形成封裝的方法,包括:在載板上放置多個功能晶粒;在載板上放置多個虛設晶粒;在包封體中包封多個功能晶粒及多個虛設晶粒;以及在多個功能晶粒上形成內連多個功能晶粒的重佈線。重佈線、多個功能晶粒、多個虛設晶粒以及包封體組合地形成重構晶圓。多個功能晶粒在重構晶圓的中心區中,多個虛設晶粒在重構晶圓的周邊區中,且周邊區環繞中心區。將重構晶圓從載板剝離。重構晶圓接合至基本上由中介板、封裝基板、印刷電路板、熱模組及其組合所組成的族群中選出的封裝組件。
Description
在三維積體電路的形成中,往往將晶粒接合於半導體晶圓上。接合製程通常包括選擇已知良好晶粒(頂部晶粒),且使用覆晶接合將頂部晶粒接合至底部晶圓中的底部晶片。每一底部晶片可接合至一或多個頂部晶粒。在接合之後,將底部填充膠施配至頂部晶粒與底部晶片之間的空間中,且將模塑化合物模塑至頂部晶粒及底部晶圓上。在對模塑化合物進行模塑之後,封裝可因模塑化合物的收縮而具有翹曲。因此,應力可能產生並施加於底部晶圓及上覆頂部晶粒。
當封裝日益變大時情況進一步惡化。隨著封裝的大小增加,封裝的一個點至另一點的距離增大,使得可累積應力的距離增大,導致應力增大且因此增大翹曲。
在習知封裝的形成中,使用虛設晶粒來減小翹曲,且將虛設晶粒及功能晶粒模塑在一起。在形成連接至功能晶粒的重佈線(RDL)之後,將重構晶圓鋸割成多個封裝。移除靠近重構晶圓的邊緣的虛設晶粒。所得封裝可包含或可未包含虛設晶粒。若存在虛設晶粒,則所得封裝中的虛設晶粒與功能晶粒並排放置。
以下揭露內容提供用以實施本發明的不同特徵的許多不同實施例或實例。下文描述組件及配置的具體實例以簡化本揭露。當然,此等組件及配置僅為實例且並不意欲為限制性的。舉例而言,在以下描述中,第一特徵形成於第二特徵上方或第二特徵上可包含第一特徵與第二特徵直接接觸地形成的實施例,且亦可包含額外特徵可形成於第一特徵與第二特徵之間以使得第一特徵與第二特徵可不直接接觸的實施例。此外,本揭露可在各種實例中重複附圖標號及/或字母。此重複是出於簡化及清晰的目的且本身並不指示所論述的各種實施例及/或組態之間的關係。
另外,為易於描述,可在本文中使用諸如「下方(underlying)」、「在...下方(below)」、「下部(lower)」、「上覆(overlying)」、「上部(upper)」以及類似者的空間相對術語來描述如在圖式中所示出的一個器件或特徵與另一器件或特徵的關係。除圖式中所描繪的定向之外,空間相對術語還意欲涵蓋元件在使用或操作中的不同定向。設備可以其他方式定向(旋轉90度或處於其他定向)且本文中所使用的空間相對描述詞可同樣相應地進行解譯。
根據一些實施例提供一種封裝以及其形成方法。根據一些實施例示出形成封裝的中間階段。論述一些實施例的一些變化。在本揭露的各種視圖及示例性實施例中,相似的附圖標號用來標明相似的元件。根據本揭露的一些實施例,虛設晶粒放置於重構晶圓的周邊區中,且虛設晶粒可圍繞功能晶粒。
圖1至圖9是根據本揭露的一些實施例的封裝的形成的中間階段的剖視圖。圖1至圖9中所繪示的製程亦在圖24中所繪示的製程流程200中示意性地反映。
圖1繪示載板20及形成於載板20上的離型膜22。載板20可為玻璃載板、陶瓷載板或類似者。載板20可具有圓形頂視形狀,且可具有典型矽晶圓的大小。舉例而言,載板20可具有8吋直徑、12吋直徑或類似者。離型膜22可由聚合物系的材料(諸如,光熱轉換(Light-To-Heat-Conversion;LTHC)材料)形成。所述聚合物系材料可連同載板20一起自將在後續製程中形成的上覆結構移除。根據本揭露的一些實施例,離型膜22由環氧基系熱釋放材料形成。晶粒貼合膜(Die-Attach Film;DAF)24形成於離型膜22上。DAF 24為黏著劑膜,且可經塗佈或疊層。
圖1進一步繪示載板20上的封裝組件26(包括晶粒26A及晶粒26B)的佈局。對應的製程在圖24所繪示的製程流程中被示出為製程202。根據本揭露的一些實施例,封裝組件26包括邏輯晶粒(諸如計算晶粒)、記憶體晶粒(諸如動態隨機存取記憶體(Dynamic Random Access Memory;DRAM)晶粒或靜態隨機存取記憶體(Static Random Access Memory;SRAM)晶粒)、光子晶粒、封裝(包含已封裝的裝置晶粒)、輸入-輸出(Input-output;IO)晶粒、數位晶粒、類比晶粒、表面安裝被動元件(surface-mounted passive device)、諸如高頻寬記憶體(High-Bandwidth Memory;HBM)塊的晶粒堆疊、或類似者。根據一些實施例,封裝組件(晶粒)26A為邏輯晶粒,而封裝組件(晶粒)26B為記憶體晶粒、IO晶粒、積體被動元件(Integrated Passive Devices;IPDs)(諸如電容器(例如多層陶瓷電容器(multilayer ceramic capacitors;MLCCs))、電阻器、電感器)或類似者。在本揭露的描述中,封裝組件26被稱為功能晶粒26,因為其具有電性功能。功能晶粒26的面積可在約20平方毫米與約900平方毫米之間的範圍內。面積的一些實例為100平方毫米及約400平方毫米。
根據本揭露的一些實施例,功能晶粒26包含半導體基板28。所述半導體基板可為矽基板、鍺基板,或由例如GaAs、InP、GaN、InGaAs、InAlAs等形成的III-V化合物半導體基板。可在基板28的表面處或所述基板上形成積體電路元件(未繪示),諸如電晶體、二極體、電阻器、電容器、電感器或類似者。諸如形成於介電層中的金屬線及通孔的內連線結構形成於積體電路元件上且電性耦接至所述積體電路元件。導電柱30形成於對應的功能晶粒26的表面處,且經由內連線結構電性耦接至功能晶粒26中的積體電路元件。根據本揭露的一些實施例,使用相對較軟的導電材料(諸如焊料、鋁或類似者)以在導電柱30上形成導電層33。導電層33用於探測(probing)功能晶粒26以確保功能晶粒26無故障。可在自各別晶圓單體化功能晶粒26之前執行探測。在導電層33比下方金屬柱30更軟的情況下,由於探測裝置的探測卡(probing card)與導電層33之間的接觸改良了,故探測更為容易。形成介電層32以覆蓋導電層33及金屬柱30。介電層32可由諸如聚醯亞胺、聚苯并噁唑(polybenzoxazole;PBO)或類似者的聚合物形成。功能晶粒26的配置會參照圖11A、圖11B、圖12A、圖12B以及圖13至圖23詳細論述。
圖2繪示虛設晶粒36在DAF 24上的佈局。對應的製程在圖24所繪示的製程流程中被示出為製程204。虛設晶粒36不具有電性功能,且並未電性連接至功能晶粒26。虛設晶粒36可由諸如金屬或金屬合金的導電材料、半導體材料、介電材料或類似者形成。虛設晶粒36的材料的熱膨脹係數(coefficients of Thermal Expansion;CTEs)小於隨後施配的包封體38(如圖3所示)的CTE。舉例而言,虛設晶粒36可由矽、玻璃、石英、銅、SiC或類似者形成。根據本揭露的一些實施例,虛設晶粒36中的一或多者的整體由同質材料形成,且所述同質材料可由前述材料選出。根據本揭露的一些實施例,虛設晶粒36的高度小於功能晶粒26的高度。根據本揭露的替代性實施例,虛設晶粒36的高度接近或大於功能晶粒26的高度。舉例而言,虛線表示虛設晶粒36的可能存在或可能不存在的部分。虛設晶粒36的配置會參照圖11A、圖11B、圖12A、圖12B以及圖13至圖23詳細論述。虛設晶粒36的面積可在約1平方毫米與約400平方毫米之間的範圍內。面積的一些實例為約9平方毫米及約100平方毫米。功能晶粒26之間的間隔、虛設晶粒36之間的間隔以及功能晶粒26與相鄰虛設晶粒36之間的間隔可在約20微米與約15毫米之間的範圍內。間隔的一些實例為約50微米或約1毫米。
接下來,參照圖3,將包封體38包封(有時稱為模塑)於功能晶粒26及虛設晶粒36上。對應的製程在圖24所繪示的製程流程中被示出為製程206。包封體38填充相鄰功能晶粒26與虛設晶粒36之間的間隙,且可進一步覆蓋功能晶粒26及虛設晶粒36。包封體38可包括模塑化合物、模塑底部填充膠或類似者。包封體38可包括基材(base material),所述基材可為聚合物、環氧樹脂及/或樹脂,以及混合於基材中的填充劑顆粒(filler particle)。填充劑顆粒可由二氧化矽(silica)、氧化鋁或類似者形成,且可具有球形形狀。
在後續步驟中,如亦在圖3中所繪示,執行諸如化學機械研磨(Chemical Mechanical Polish;CMP)製程或機械研磨(grinding)製程的平坦化製程。對應的製程在圖24所繪示的製程流程中被示出為製程208。藉由平坦化製程降低包封體38的頂表面直至暴露金屬柱30。歸因於平坦化,金屬柱30的頂表面與包封體38的頂表面實質上共面。根據本揭露的一些實施例,虛設晶粒36的頂表面低於包封體38的頂表面,因此在平坦化製程之後包封體38的一些部分覆蓋虛設晶粒36。可在平坦化製程中移除導電層33(在圖2中繪示),或導電層33的一些底部部分可被留下而繼續覆蓋金屬柱30。根據本揭露的替代性實施例,虛設晶粒36的頂部部分亦被研磨,且在平坦化製程之後虛設晶粒36的頂表面與包封體38的頂表面共面。根據又一替代性實施例,虛設晶粒36中的一些具有與包封體38的頂表面共面的表面,且一些其他虛設晶粒36的頂表面低於包封體38的頂表面。
圖4至圖7繪示正面重佈線(RDLs)及各別介電層的形成。參照圖4,形成介電層40。對應的製程在圖24中所繪示的製程流程中被示出為製程210。根據本揭露的一些實施例,介電層40由諸如PBO、聚醯亞胺或類似者的感光聚合物形成。根據本揭露的替代性實施例,介電層40由諸如氮化矽、氧化矽或類似者的無機材料形成。可使用例如微影製程圖案化介電層40以形成開口42。功能晶粒26的金屬柱30藉由開口42顯露出。
形成RDL以電性連接至金屬柱30。對應的製程在圖24所繪示的製程流程中亦被示出為製程210。根據本揭露的一些實施例,如圖5中所繪示,形成毯覆式金屬晶種層44,所述毯覆式金屬晶種層44包含延伸至開口42中的一些部分及位於介電層40上的一些其他部分。金屬晶種層44可由鈦、銅、鎳或類似者形成。根據本揭露的一些實施例,金屬晶種層44包括鈦層及鈦層上的銅層。接著在金屬晶種層44上形成鍍覆罩幕46,且接著使所述鍍覆罩幕46圖案化以形成開口48,並使得金屬晶種層44的一些部分被顯露出。此外,開口42亦被鍍覆罩幕46中的開口48顯露。鍍覆罩幕46可由光阻形成。
參照圖6,執行鍍覆製程以形成重佈線(RDL)50。鍍覆製程可包括電化學鍍覆、無電鍍覆或類似者。經鍍覆材料可包括金屬或金屬合金,且所述金屬或金屬合金包括鈦、銅、鎳、鋁、鎢、其多層及/或其合金。在後續製程中,例如在灰化製程中移除鍍覆罩幕46。接著蝕刻先前由鍍覆罩幕46覆蓋的毯覆式銅晶種層44的部分。金屬晶種層44的剩餘部分被視為RDL 50的部分。RDL 50包括介電層40中的通孔部分以及介電層40上的跡線(線)部分。跡線部分可包括較窄部分及較寬部分,其中較寬部分可充當金屬接墊。
參照圖7,根據本揭露的一些實施例,形成更多的介電層及對應的RDL層。對應的製程在圖24所繪示的製程流程中被示出為製程212。應瞭解的是,取決於設計要求,介電層及RDL層的數目可比所繪示的數目更多或更少。根據本揭露的一些實施例,使用由用於形成介電層40的候選材料的類似族群中選出的材料來形成介電層52。RDL 54被形成為電性耦接至功能晶粒26。可使用用於形成RDL 50的類似材料及方法形成RDL 54。介電層40及介電層52以及RDL 50及RDL 54組合地形成內連線結構56。所述內連線結構56將封裝中的所有功能晶粒26電性內連至積體系統中。
圖8繪示電性連接件67的形成。根據本揭露的一些實施例,電性連接件67為焊料區。根據替代性實施例,電性連接件67包括金屬柱及金屬柱上的焊料區。電性連接件67的形成可包括將焊料球放置於頂部RDL層中的RDL接墊被暴露出的部分上,且接著回焊焊料球以形成焊料區。根據本揭露的替代性實施例,電性連接件67的形成包括執行鍍覆製程以形成金屬柱及金屬柱上的焊料區,且接著回焊被鍍覆的焊料區。在本揭露的描述中,將DAF 24上方的特徵組合地稱為封裝組件,所述封裝組件可為重構晶圓(reconstructed wafer)58。
根據其他實施例,封裝組件(重構晶圓58)可為重構面板(reconstructed panel)、重構基板(reconstructed substrate)或類似者。舉例而言,在封裝組件(重構晶圓58)的平面視圖中,(重構晶圓封裝組件58)可具有環形形狀、矩形形狀或類似者。封裝組件(重構晶圓58)可配置為重構面板或重構基板中的陣列。
在後續製程中,例如藉由將光投射於離型膜22上來自載板20卸下重構晶圓58,且光(諸如雷射光束)穿過透明載板20。對應的製程在圖24所繪示的製程流程中被示出為製程214。由此分解離型膜22,且重構晶圓58自載板20釋放。可在清潔製程中移除DAF 24。重構晶圓58因而形成為分離的組件(discrete component)。
圖9繪示封裝60的形成,其中併入重構晶圓58。對應的製程在圖24所繪示的製程流程中被示出為製程216。根據本揭露的一些實施例,自載板20剝離的重構晶圓58在不鋸割的情況下用於封裝60中,且載板20上的所有功能晶粒26及虛設晶粒36(如在圖7中所示)仍在封裝60中。舉例而言,亦可藉由移除不具有功能晶粒26、虛設晶粒36以及RDL的一些邊緣部分來削減(trimmed)重構晶圓58。舉例而言,圖12A繪示削減線71,且虛線(削減線71)標記的區外部的重構晶圓58的外部部分被削減。根據一些實施例,並未削減重構晶圓58的邊緣部分中的至少一些。作為實例,圖9繪示封裝60包括兩個重構晶圓58。應瞭解的是,封裝60可包括一個或大於兩個重構晶圓58。此外,當具有大於一個重構晶圓58時,重構晶圓58可具有相同結構或不同結構。
根據本揭露的一些實施例,將多個封裝組件62接合至重構晶圓58。所述封裝組件62包括且不限於封裝、電壓調節器模組(voltage regulator module)、電源供應模組(power supply module)(針對兩個更具體的封裝類型)、IPD、IO連接件(諸如用於封裝60的IO的插座(socket))或類似者。重構晶圓58可經由熱界面材料(Thermal Interface Material;TIM)66貼合至熱模組64。可使用螺栓68、螺栓69以及加強件/支架70以將重構晶圓58緊固至熱模組64上。可在重構晶圓58及熱模組64中鑽孔,以使得螺栓69可穿過重構晶圓58及熱模組64。熱模組64可包括散熱器(heat sink)、熱散播器(heat spreader)、冷板(cold plate)或類似者。當使用冷板時,冷卻劑可為氣體或諸如水、油或類似者的液體。
圖10繪示封裝72的形成,其中併入重構晶圓58。根據本揭露的一些實施例,經由覆晶接合來接合重構晶圓58與封裝組件74。封裝組件74可為封裝基板、中介板(interposer)、印刷電路板或類似者。封裝組件62可接合至封裝組件74。可藉由螺絲68及螺栓69將熱模組64、重構晶圓58以及封裝組件74緊固在一起。在圖9及圖10所繪示的結構中,螺栓69可在不穿過虛設晶粒36的情況下穿過封裝58。替代性地,一些螺栓69可穿過虛設晶粒36。所述虛設晶粒在圖9中繪示為虛線以表示其可能存在或可能未存在。類似地,圖10中的螺栓69可能穿過或可能未穿過虛設晶粒36。
封裝60(如圖9所示)及封裝72(如圖10所示)可為高效能計算(High-Performance Computing;HPC)封裝、人工智慧(Artificial Intelligence;AI)伺服器的加速器、用於資料中心應用程式的其他效能要求計算封裝,或用於伺服器的封裝。
參照圖11A、圖11B、圖12A、圖12B以及圖13至圖23論述功能晶粒26及虛設晶粒36(如在先前實施例中所論述的)的佈局的細節。重構晶圓58可為大晶圓,且可具有大於約10,000平方毫米的面積。重構晶圓58的面積亦可在約10,000平方毫米與約70,686平方毫米之間的範圍內。圖11A及圖11B繪示根據一些實施例的重構晶圓58的中心區58A及周邊區58B。參照圖11A,重構晶圓58具有矩形頂視形狀。重構晶圓58具有中心59。可繪製自中心59指向重構晶圓58的任何邊緣或角落的箭頭。若箭頭具有長度L1,則箭頭與中心區58A的外邊界61相接。自中心59至中心區58A的邊界61的距離為L2,且L2/L1的比等於2/3。中心區58A外部的重構晶圓58的區為周邊區58B。周邊區58B因而環繞中心區58A,且中心區58A與周邊區58B之間的界面繪示為57。
圖11B繪示出當重構晶圓具有圓形頂視形狀時的中心區58A及周邊區58B。中心區58A具有半徑R2,且重構晶圓58具有半徑R1。R2/R1的比等於2/3。在圖12A及圖12B至圖23中,示出矩形或圓環的介面57,其中矩形或圓環的介面57內部的區為對應的重構晶圓58的中心區,且矩形或圓環的介面57外部的區為對應的重構晶圓58的周邊區。
根據本揭露的一些實施例,如圖12A、圖12B以及圖13至圖23所示,虛設晶粒36主要放置於重構晶圓58的周邊區58B中。中心區58A可不具有虛設晶粒36,或可包含虛設晶粒36中的一些。周邊區58B可不具有功能晶粒26,或可包含功能晶粒26中的一些。假定在區(中心區58A或周邊區58B)中,所有功能晶粒26的總頂視面積等於F,且所有虛設晶粒36的總頂視面積等於D。在重構晶圓58的中心區58A中,D/F的比可在約0與約1之間的範圍內,且可在約0.25與約0.5之間的範圍內。在重構晶圓58的周邊區58B中,F/D的比可在約0與約2/3之間的範圍內,且可在約0.2與約2/3之間的範圍內。舉例而言,在周邊區58B中,F/D的比可在約0.3與約0.5之間的範圍內。
應瞭解的是,載板20(如圖8所示)可具有與重構晶圓58的形狀及大小相同(或類似)的形狀及大小。因此,載板20亦可劃分成與重構晶圓58的中心區及周邊區相同的中心區及周邊區。在自載板20卸下重構晶圓58之前,重構晶圓58的中心區58A及周邊區58B分別與載板20的中心區及周邊區交疊。
應瞭解的是,圖12A、圖12B以及圖13至圖23中所示的重構晶圓58可為已在封裝60(如圖9所示)或封裝72(如圖10所示)中的晶圓,且因此不再對重構晶圓58執行單體化及削減。圖12A、圖12B以及圖13至圖23中所示的重構晶圓58中的一些可經削減(但未單體化)(如圖12A中作為實例所繪示),且接著用來形成封裝60(如圖9所示)或封裝72(如圖10所示)。然而,不會自重構晶圓58削減掉任何虛設晶粒36及功能晶粒26。在圖12A、圖12B以及圖13至圖23中所繪示的實施例,虛設晶粒36的大小可彼此相同或彼此不同。此外,虛設晶粒36的佈局可遵循某一圖案,諸如陣列或其他重複圖案,或可以隨機佈局放置。在周邊區58B中,虛設晶粒36可實質上均勻地分佈且具有實質上均勻的密度。在圖12A、圖12B以及圖13至圖23中,可存在示出於例如周邊區58B中的一些空隙(vacancy)。此等空隙可保留且用於螺絲68及螺栓69的附接,或亦可放置有虛設晶粒。此外,螺栓69中的一些(參照圖12A作為實例)可穿過虛設晶粒36,且一些其他螺栓69可在不穿過虛設晶粒36的情況下穿過重構晶圓58。替代性地,螺栓69中無一者穿過虛設晶粒36。螺栓69的穿過(或不穿過)虛設晶粒36亦適用於圖12B及圖13至圖23中的實施例,儘管螺栓69未繪示於這些圖式中。
在圖12A、圖12B以及圖13至圖23中,晶粒26A表示諸如計算晶粒(例如用於資料計算)的邏輯晶粒或其他類型的晶粒,諸如被動晶粒、光子晶粒或類似者。晶粒26B表示IO晶粒,且可表示其他類型的晶粒,諸如被動晶粒、光子晶粒或類似者。IO晶粒26B用於重構晶圓58與外部組件之間的資料輸入及輸出。根據本揭露的一些實施例,將IO晶粒26B對準圍繞邏輯/計算晶粒26A的環來放置,以最小化計算晶粒26A之間的路由距離(routing distance),使得效能增強。多個邏輯/計算晶粒26A可彼此一致,或可彼此不同。此外,未標記圖12A、圖12B以及圖13至圖23中的所有晶粒,但可參照其對應的陰影線圖案來得知晶粒為邏輯/計算晶粒、IO晶粒或虛設晶粒。
圖12A繪示根據一些實施例的重構晶圓58的頂視圖,其中重構晶圓58具有圓形頂視形狀。根據本揭露的一些實施例,如圖12A中所示,重構晶圓58的邊緣為全圓環。根據本揭露的替代性實施例,重構晶圓58具有削減的一些邊緣部分,其中削減部分藉由虛線(削減線71)標記。根據替代性實施例,削減重構晶圓58的所有邊緣部分,而不削減功能晶粒26或虛設晶粒36。因此,經削減的重構晶圓58的新的邊緣更靠近虛設晶粒36。應瞭解的是,儘管使用圖12A作為實例以論述重構晶圓58的削減,但以上論述的削減(或未削減)方案亦可適用於圖12B及圖13至圖23中的實施例。圓環(介面57)表示中心區58A與周邊區58B之間的邊界。根據本揭露的一些實施例,所有虛設晶粒36在周邊區58B中。大部分的功能晶粒26在中心區58A中,且其餘的功能晶粒26在周邊區58B中。
圖12B繪示根據一些實施例的重構晶圓58的頂視圖,其中重構晶圓58具有矩形頂視形狀。矩形(介面57)表示中心區58A與周邊區58B之間的邊界。根據本揭露的一些實施例,所有虛設晶粒36在周邊區58B中。大部分的功能晶粒26在中心區58A中,且其餘的功能晶粒26在周邊區58B中。此外,所有的IO晶粒26B可在周邊區58B中。
圖13、圖14以及圖15繪示具有圓形頂視形狀的重構晶圓58。在圖13中,包含所有計算晶粒26A及IO晶粒26B的所有功能晶粒26在中心區58A中。虛設晶粒中的一些延伸至中心區58A中,而其餘的虛設晶粒在周邊區58B中。在圖14中,功能晶粒26中的一些在中心區58A中,且一些功能晶粒26延伸至周邊區58B中。此外,根據本揭露的一些實施例,一些IO晶粒26B在中心區58A中,且一些IO晶粒26B在周邊區58B中。所有虛設晶粒36在周邊區58B中。在圖15中,所有IO晶粒26B在周邊區58B中,且邏輯/計算晶粒26A中的一些在中心區58A中,且其餘的邏輯/計算晶粒在周邊區58B中。所有虛設晶粒36在周邊區58B中。
在圖12A、圖12B以及圖13至圖15中,邏輯/計算晶粒26A被配置為陣列,且無IO晶粒26B及虛設晶粒36插入至陣列中。圖16至圖23繪示安置為組(如圖16中所示的GD)的晶粒。組GD可具有彼此一致的結構。每一組GD可包含邏輯/計算晶粒26A,且可包含或可未包含其他類型的晶粒,諸如IO晶粒26B、虛設晶粒36、被動元件晶粒及/或類似者。此設定可替代性地被視為功能晶粒26經分組,且虛設晶粒36可能插入或可能未插入以填充組GD之間的空間。相同組GD中的邏輯/計算晶粒26A之間的組內間隔可等於或小於組GD之間的組間間隔。舉例而言,圖16繪示組內間隔S1小於組間間隔S2。圖17繪示虛設晶粒36放置於功能晶粒26之間。在圖17中,若將虛設晶粒36視為組的部分,則組內間隔S1可等於組間間隔S2。替代性地,若並未將虛設晶粒36視為組的部分,則組內間隔S1將小於組間間隔S2,且虛設晶粒36插入於組GD之間。
參照圖16,每一組GD包含邏輯/計算晶粒26A,且不包含IO晶粒26B及虛設晶粒36。在圖17所示的實施例中,每一組GD包含邏輯/計算晶粒26A且不包含IO晶粒26B。圖18及圖19分別示出如在圖16及圖17中的類似配置,除了圖16及圖17中的重構晶圓58具有圓形頂視形狀,而圖18及圖19中的重構晶圓58具有矩形頂視形狀。
圖20繪示每一組GD包含邏輯/計算晶粒26A及IO晶粒26B,且組GD中無虛設晶粒36。替代性地陳述,無虛設晶粒36插入於組GD之間。圖21繪示每一組GD包含邏輯/計算晶粒26A、IO晶粒26B以及虛設晶粒36,或替代性地陳述,若並未將虛設晶粒36視為組GD的部分,則虛設晶粒36插入於組GD之間。圖22及圖23分別示出如在圖20及圖21中的類似配置,除了圖20及圖21中的重構晶圓58具有圓形頂視形狀,而圖22及圖23中的重構晶圓58具有矩形頂視形狀。
在上文所示出的實施例中,一些製程及特徵根據本揭露的一些實施例來論述。亦可包括其他特徵及製程。舉例而言,可包括測試結構以輔助對3D封裝或3DIC元件的驗證測試。測試結構可包括例如形成於重佈線層中或基板上的測試接墊,且所述測試接墊允許測試3D封裝或3DIC、使用探針及/或探針卡,以及類似者。可對中間結構以及最終結構執行驗證測試。此外,本文中所揭露的結構及方法可結合併入對已知良好晶粒的中間驗證的測試方法來使用,以提高良率及降低成本。
本揭露的實施例具有一些有利的特徵。藉由配置重構晶圓中的虛設晶粒使原本會由諸如模塑化合物的包封體佔據空間由虛設晶粒所佔據。由於虛設晶粒的CTE比包封體更接近功能晶粒的CTE,故添加虛設晶粒可減小應力及重構晶圓的翹曲。此外,虛設晶粒包含在環繞功能晶粒的周邊區中的至少一些部分。因為重構晶圓可具有翹曲而導致重構晶圓的邊緣部分在微影製程中失去焦點(lose focus),故在周邊區中添加虛設晶粒可提高封裝製程的良率。使用虛設晶粒佔據重構晶圓的邊緣部分不僅減小翹曲,且亦留下遭受去焦(de-focusing)的一些邊緣部分不使用,故可提高良率。
根據本揭露的一些實施例,一種形成封裝的方法包括:在載板上放置多個功能晶粒;在載板上放置多個虛設晶粒;在包封體中包封多個功能晶粒及多個虛設晶粒;在多個功能晶粒上形成內連多個功能晶粒的重佈線,其中重佈線、多個功能晶粒、多個虛設晶粒以及包封體組合地形成重構晶圓,多個功能晶粒在重構晶圓的中心區中,多個虛設晶粒在重構晶圓的周邊區中,且周邊區環繞中心區;將重構晶圓從載板剝離;以及將重構晶圓接合至基本上由中介板、封裝基板、印刷電路板、熱模組及其組合所組成的族群中選出的封裝組件。在實施例中,多個虛設晶粒實質上均勻地分佈於周邊區中。在實施例中,接合至封裝組件的重構晶圓具有圓形頂視形狀。在實施例中,重構晶圓在接合至封裝組件之前為未鋸割的。在實施例中,方法更包括藉由穿過重構晶圓的螺栓將重構晶圓緊固至封裝組件。在實施例中,螺栓穿過多個虛設晶粒中的一者。在實施例中,包封包括:施配包封體;以及平坦化包封體,其中多個虛設晶粒中的虛設晶粒在平坦化中被研磨。在實施例中,多個虛設晶粒比多個功能晶粒薄,且包封包括:施配包封體;以及平坦化包封體,其中在平坦化之後,包封體的層覆蓋多個虛設晶粒。在實施例中,多個功能晶粒被放置為多個組,其中相同組中的晶粒之間的組內間隔小於多個組的相鄰者之間的組間間隔。在實施例中,方法更包括在多個組之間放置額外多個虛設晶粒。在實施例中,多個組中的一者中的晶粒包括計算晶粒及輸入-輸出晶粒。在實施例中,方法更包括在多個功能晶粒周圍放置多個輸入-輸出晶粒。
根據本揭露的一些實施例,一種方法包括:在載板上放置多個邏輯晶粒;在載板上放置多個IO晶粒;在載板上放置多個虛設晶粒,其中多個虛設晶粒分佈於多個邏輯晶粒及多個IO晶粒所位於的區的周圍;在包封體中包封多個邏輯晶粒、多個IO晶粒以及多個虛設晶粒;在多個邏輯晶粒及多個IO晶粒上形成電性耦接至多個邏輯晶粒及多個IO晶粒的重佈線以形成重構晶圓,且重構晶圓包括多個邏輯晶粒、多個IO晶粒、多個虛設晶粒、包封體以及重佈線;以及將重構晶圓從載板剝離。在實施例中,方法更包括在不鋸割重構晶圓的情況下將重構晶圓接合至封裝組件。在實施例中,方法更包括在包封之前在多個邏輯晶粒中的兩者之間插入虛設晶粒。在實施例中,將多個邏輯晶粒放置為多個組的部分,其中相同組中的晶粒之間的組內間隔小於多個組的相鄰者之間的組間間隔。在實施例中,將多個IO晶粒放置為多個組的部分。
根據本揭露的一些實施例,一種封裝包括:重構晶圓,包括:多個虛設晶粒;多個功能晶粒,位於封裝的中心區中,其中多個虛設晶粒對準環繞多個功能晶粒的環來配置;包封體,在其中包封有多個虛設晶粒及多個功能晶粒;以及多個RDL,位於多個功能晶粒上,其中多個RDL將封裝中的所有功能晶粒內連至積體系統中。在實施例中,封裝更包括接合至重構晶圓的封裝組件,其中封裝組件是由基本上由中介板、封裝基板、印刷電路板、熱模組及其組合所組成的族群中選出的。在實施例中,接合至封裝組件的重構晶圓具有圓形頂視形狀。
前文概述若干實施例的特徵,以使所屬領域中具通常知識者可更好地理解本揭露的態樣。所屬領域中具通常知識者應理解,其可易於使用本揭露作為設計或修改用於實現本文中所引入的實施例的相同目的及/或達成相同優點的其他製程及結構的基礎。所屬領域中具通常知識者亦應認識到,此類等效構造並不脫離本揭露的精神及範圍,且所屬領域中具通常知識者可在不脫離本揭露的精神及範圍的情況下在本文中作出各種改變、替代以及更改。
20‧‧‧載板
22‧‧‧離型膜
24‧‧‧晶粒貼合膜
26、26A、26B、62‧‧‧功能晶粒
30‧‧‧導電柱
32、40、52‧‧‧介電層
33‧‧‧導電層
36‧‧‧虛設晶粒
38‧‧‧包封體
42、48‧‧‧開口
44‧‧‧金屬晶種層
46‧‧‧鍍覆罩幕
50、54‧‧‧重佈線
56‧‧‧內連線結構
57‧‧‧介面
58‧‧‧重構晶圓
58A‧‧‧中心區
58B‧‧‧周邊區
59‧‧‧中心
60、72‧‧‧封裝
61‧‧‧邊界
64‧‧‧熱模組
66‧‧‧熱界面材料
67‧‧‧電性連接件
68‧‧‧螺絲
69‧‧‧螺栓
70‧‧‧加強件/支架
71‧‧‧削減線
74‧‧‧封裝組件
200‧‧‧製程流程
202、204、206、208、210、212、214、216‧‧‧製程
GD‧‧‧組
L1‧‧‧長度
L2‧‧‧距離
R1、R2‧‧‧半徑
S1‧‧‧組內間隔
S2‧‧‧組間間隔
圖1至圖9是根據一些實施例的封裝的形成的中間階段的剖視圖。
圖10是根據一些實施例的封裝的剖視圖。
圖11A及圖11B是根據一些實施例的包含中心區及周邊區的重構晶圓的頂視圖。
圖12A、圖12B以及圖13至圖23是根據一些實施例的一些重構晶圓的頂視圖。
圖24繪示用於形成根據一些實施例的封裝的製程流程。
26、26A、26B‧‧‧功能晶粒
36‧‧‧虛設晶粒
57‧‧‧介面
58‧‧‧重構晶圓
58A‧‧‧中心區
58B‧‧‧周邊區
69‧‧‧螺栓
71‧‧‧削減線
Claims (20)
- 一種形成封裝的方法,包括: 在載板上放置多個功能晶粒; 在所述載板上放置多個虛設晶粒; 在包封體中包封所述多個功能晶粒及所述多個虛設晶粒; 在所述多個功能晶粒上形成內連所述多個功能晶粒的重佈線,其中所述重佈線、所述多個功能晶粒、所述多個虛設晶粒以及所述包封體組合地形成重構晶圓,所述多個功能晶粒在所述重構晶圓的中心區中,所述多個虛設晶粒在所述重構晶圓的周邊區中,且所述周邊區環繞所述中心區; 將所述重構晶圓從所述載板剝離;以及 將所述重構晶圓接合至基本上由中介板、封裝基板、印刷電路板、熱模組及其組合所組成的族群中選出的封裝組件。
- 如申請專利範圍第1項所述的形成封裝的方法,其中所述多個虛設晶粒實質上均勻地分佈於所述周邊區中。
- 如申請專利範圍第1項所述的形成封裝的方法,其中接合至所述封裝組件的所述重構晶圓具有圓形頂視形狀。
- 如申請專利範圍第1項所述的形成封裝的方法,其中所述重構晶圓在接合至所述封裝組件之前為未鋸割的。
- 如申請專利範圍第1項所述的形成封裝的方法,更包括藉由穿過所述重構晶圓的螺栓將所述重構晶圓緊固至所述封裝組件。
- 如申請專利範圍第5項所述的形成封裝的方法,其中所述螺栓穿過所述多個虛設晶粒中的一者。
- 如申請專利範圍第1項所述的形成封裝的方法,其中所述包封包括: 施配所述包封體;以及 平坦化所述包封體,其中所述多個虛設晶粒中的虛設晶粒在所述平坦化中被研磨。
- 如申請專利範圍第1項所述的形成封裝的方法,其中所述多個虛設晶粒比所述多個功能晶粒薄,且所述包封包括: 施配所述包封體;以及 平坦化所述包封體,其中在所述平坦化之後,所述包封體的層覆蓋所述多個虛設晶粒。
- 如申請專利範圍第1項所述的形成封裝的方法,其中所述多個功能晶粒被放置為多個組,其中相同組中的所述功能晶粒之間的組內間隔小於所述多個組中的相鄰者之間的組間間隔。
- 如申請專利範圍第9項所述的形成封裝的方法,更包括在所述多個組之間放置額外多個虛設晶粒。
- 如申請專利範圍第9項所述的形成封裝的方法,其中所述多個組中的一者中的所述功能晶粒包括計算晶粒及輸入-輸出晶粒。
- 如申請專利範圍第1項所述的形成封裝的方法,更包括在所述多個功能晶粒周圍放置多個輸入-輸出晶粒。
- 一種形成封裝的方法,包括: 在載板上放置多個邏輯晶粒; 在所述載板上放置多個輸入-輸出(IO)晶粒; 在所述載板上放置多個虛設晶粒,其中所述多個虛設晶粒分佈於所述多個邏輯晶粒及所述多個輸入-輸出晶粒所位於的區的周圍; 在包封體中包封所述多個邏輯晶粒、所述多個輸入-輸出晶粒以及所述多個虛設晶粒; 在所述多個邏輯晶粒及所述多個輸入-輸出晶粒上形成電性耦接至所述多個邏輯晶粒及所述多個輸入-輸出晶粒的重佈線以形成重構晶圓,且所述重構晶圓包括所述多個邏輯晶粒、所述多個輸入-輸出晶粒、所述多個虛設晶粒、所述包封體以及所述重佈線;以及 將所述重構晶圓從所述載板剝離。
- 如申請專利範圍第13項所述的形成封裝的方法,更包括在不鋸割所述重構晶圓的情況下將所述重構晶圓接合至封裝組件。
- 如申請專利範圍第13項所述的形成封裝的方法,更包括在所述包封之前在所述多個邏輯晶粒中的兩者之間插入虛設晶粒。
- 如申請專利範圍第13項所述的形成封裝的方法,其中將所述多個邏輯晶粒放置為多個組的部分,其中相同組中的所述邏輯晶粒之間的組內間隔小於所述多個組中的相鄰者之間的組間間隔。
- 如申請專利範圍第16項所述的形成封裝的方法,其中將所述多個輸入-輸出晶粒放置為所述多個組的部分。
- 一種封裝,包括: 重構晶圓,包括: 多個虛設晶粒; 多個功能晶粒,位於所述封裝的中心區中,其中所述多個虛設晶粒對準環繞所述多個功能晶粒的環來配置; 包封體,在其中包封有所述多個虛設晶粒及所述多個功能晶粒;以及 多個重佈線(Redistribution Lines;RDLs),位於所述多個功能晶粒上,其中所述多個重佈線將所述封裝中的所有功能晶粒內連至積體系統中。
- 如申請專利範圍第18項所述的封裝,更包括接合至所述重構晶圓的封裝組件,其中所述封裝組件是由基本上由中介板、封裝基板、印刷電路板、熱模組及其組合所組成的族群中選出的。
- 如申請專利範圍第19項所述的封裝,其中接合至所述封裝組件的所述重構晶圓具有圓形頂視形狀。
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