CN116057680A - 一种芯片封装结构、电子设备及芯片封装结构的制备方法 - Google Patents
一种芯片封装结构、电子设备及芯片封装结构的制备方法 Download PDFInfo
- Publication number
- CN116057680A CN116057680A CN202080103465.3A CN202080103465A CN116057680A CN 116057680 A CN116057680 A CN 116057680A CN 202080103465 A CN202080103465 A CN 202080103465A CN 116057680 A CN116057680 A CN 116057680A
- Authority
- CN
- China
- Prior art keywords
- chip
- substrate
- data processing
- packaging
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 130
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 336
- 230000003287 optical effect Effects 0.000 claims abstract description 112
- 239000013307 optical fiber Substances 0.000 claims abstract description 34
- 230000000149 penetrating effect Effects 0.000 claims abstract description 11
- 238000007789 sealing Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 230000008093 supporting effect Effects 0.000 claims description 12
- 239000000835 fiber Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 description 44
- 238000010586 diagram Methods 0.000 description 25
- 238000000465 moulding Methods 0.000 description 16
- 230000017525 heat dissipation Effects 0.000 description 13
- 239000004020 conductor Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 230000003190 augmentative effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 235000009537 plain noodles Nutrition 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XOMKZKJEJBZBJJ-UHFFFAOYSA-N 1,2-dichloro-3-phenylbenzene Chemical compound ClC1=CC=CC(C=2C=CC=CC=2)=C1Cl XOMKZKJEJBZBJJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
本申请实施例提供一种芯片封装结构、电子设备及芯片封装结构的制备方法，涉及芯片封装技术领域。该芯片封装结构包括：封装基底、塑封层、至少一个光引擎、至少一个数据处理芯片；封装基底为重新布线层，光引擎包括光纤连接结构，以及构成有光子集成电路的光芯片，光芯片和数据处理芯片均集成在封装基底的同一表面上，并分别与封装基底电连接，且光芯片的出光面位于背离封装基底的一侧；塑封层位于封装基底的集成有光芯片和数据处理芯片的表面上，并包裹光芯片和数据处理芯片，塑封层具有贯通至出光面的通道，光纤连接结构穿过通道与出光面连接。
Description
PCT国内申请，说明书已公开。
Claims (18)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/112294 WO2022041159A1 (zh) | 2020-08-28 | 2020-08-28 | 一种芯片封装结构、电子设备及芯片封装结构的制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116057680A true CN116057680A (zh) | 2023-05-02 |
Family
ID=80352499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080103465.3A Pending CN116057680A (zh) | 2020-08-28 | 2020-08-28 | 一种芯片封装结构、电子设备及芯片封装结构的制备方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN116057680A (zh) |
| WO (1) | WO2022041159A1 (zh) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL3168874T3 (pl) * | 2015-11-11 | 2021-07-12 | Lipac Co., Ltd. | Obudowa chipów półprzewodnikowych z interfejsem optycznym |
| US20190121041A1 (en) * | 2016-03-28 | 2019-04-25 | Intel IP Corporation | Optical fiber connection on package edge |
| US9807882B1 (en) * | 2016-08-17 | 2017-10-31 | Qualcomm Incorporated | Density-optimized module-level inductor ground structure |
| US10141276B2 (en) * | 2016-09-09 | 2018-11-27 | Powertech Technology Inc. | Semiconductor package structure and manufacturing method thereof |
| US10162139B1 (en) * | 2017-07-27 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semicondcutor package |
| US11004803B2 (en) * | 2018-07-02 | 2021-05-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy dies for reducing warpage in packages |
| US11002927B2 (en) * | 2019-02-21 | 2021-05-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure |
-
2020
- 2020-08-28 CN CN202080103465.3A patent/CN116057680A/zh active Pending
- 2020-08-28 WO PCT/CN2020/112294 patent/WO2022041159A1/zh active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022041159A1 (zh) | 2022-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110718593B (zh) | 半导体结构及其形成方法 | |
| US7413929B2 (en) | Integrated chip package structure using organic substrate and method of manufacturing the same | |
| JP4425936B2 (ja) | 光モジュール | |
| US6960826B2 (en) | Multi-chip package and manufacturing method thereof | |
| US7271033B2 (en) | Method for fabricating chip package | |
| US9030029B2 (en) | Chip package with die and substrate | |
| US7884486B2 (en) | Chip-stacked package structure and method for manufacturing the same | |
| TW202125789A (zh) | 半導體封裝及其形成方法 | |
| US10566369B2 (en) | Image sensor with processor package | |
| CN110890349A (zh) | 一种带有光互连接口的光电芯片三维封装结构及其制造方法 | |
| TW202145469A (zh) | 半導體封裝 | |
| CN108140632B (zh) | 一种芯片 | |
| US8785297B2 (en) | Method for encapsulating electronic components on a wafer | |
| CN112820725A (zh) | 激光雷达芯片封装结构及封装方法 | |
| TW202135245A (zh) | 晶片封裝結構及其製造方法 | |
| US8546187B2 (en) | Electronic part and method of manufacturing the same | |
| US11063029B2 (en) | Method for forming an electro-optical system | |
| CN116057680A (zh) | 一种芯片封装结构、电子设备及芯片封装结构的制备方法 | |
| US20080164620A1 (en) | Multi-chip package and method of fabricating the same | |
| CN115148611A (zh) | 2.5d封装结构及制备方法 | |
| US20120146239A1 (en) | Packaged microelectronic devices recessed in support member cavities, and associated methods | |
| CN221057427U (zh) | 封装结构 | |
| CN220474621U (zh) | 线路载板及电子封装体 | |
| CN112234052B (zh) | 电子构装结构及其制法 | |
| TWI841184B (zh) | 半導體封裝及其製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |