TW202004876A - Workpiece processing sheet - Google Patents
Workpiece processing sheet Download PDFInfo
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- TW202004876A TW202004876A TW108112637A TW108112637A TW202004876A TW 202004876 A TW202004876 A TW 202004876A TW 108112637 A TW108112637 A TW 108112637A TW 108112637 A TW108112637 A TW 108112637A TW 202004876 A TW202004876 A TW 202004876A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Abstract
Description
本發明關於工件加工用片材,特別是關於適合工件進行雷射刻印之情形的工件加工用片材。The present invention relates to a sheet for workpiece processing, and particularly to a sheet for workpiece processing that is suitable for laser marking of a workpiece.
近年,經由稱為面朝下(face down)方式的封裝法以製造半導體裝置被進行。此方法中,在封裝具有形成凸塊(bump)等的電極的電路面之半導體晶片時,半導體晶片的電路面側和導線框架(lead frame)等的晶片搭載部接合。因此,成為不形成電路的半導體晶片的內面側露出的結構。In recent years, semiconductor devices have been manufactured through a packaging method called a face-down method. In this method, when packaging a semiconductor wafer having a circuit surface on which electrodes such as bumps are formed, the circuit surface side of the semiconductor wafer is bonded to a wafer mounting portion such as a lead frame. Therefore, the inner surface side of the semiconductor wafer where no circuit is formed is exposed.
因此,多有在半導體晶片的內面側形成用於保護半導體晶片的由硬質有機材料所構成的保護膜者。於是,例如,在專利文獻1,已揭示一種將可形成上述保護膜的保護膜形成層形成於切割片上而成之保護膜形成及切割用片材。根據此保護膜形成及切割用片材,可在半導體晶圓上形成保護膜後,繼續進行切割(dicing),而得到帶有保護膜的半導體晶片。Therefore, there are many people who form a protective film made of a hard organic material for protecting the semiconductor wafer on the inner surface side of the semiconductor wafer. Thus, for example, Patent Document 1 discloses a protective film forming and dicing sheet in which a protective film forming layer capable of forming the above protective film is formed on a dicing sheet. According to this sheet for forming a protective film and dicing, after forming a protective film on a semiconductor wafer, dicing can be continued to obtain a semiconductor wafer with a protective film.
又,上述切割片本身具有基材及設置於其一面的黏著劑層。黏著劑層的黏著劑,為了使帶有保護膜的半導體晶片在撿拾(pick up)時的剝離性提高,有可能使用經紫外線照射使黏著力下降的紫外線硬化性的黏著劑。In addition, the dicing sheet itself has a base material and an adhesive layer provided on one side thereof. In order to improve the peelability of a semiconductor film with a protective film during pick-up, the adhesive of the adhesive layer may use an ultraviolet-curable adhesive whose adhesive strength is reduced by ultraviolet irradiation.
上述保護膜通常為了顯示該半導體晶片的產品編號等,會進行印字。此印字方法一般是對保護膜照射雷射的雷射刻印(laser marking)法。在對保護膜施行雷射刻印的情形,是隔著保護膜形成及切割用片材的切割片,對保護膜照射雷射光而成。The protective film is usually printed in order to display the product number of the semiconductor wafer or the like. This printing method is generally a laser marking method in which a protective film is irradiated with laser light. In the case of laser marking the protective film, the protective film is formed by irradiating the protective film with laser light through the cutting sheet of the protective film forming and cutting sheet.
上述保護膜一般是由黑色的樹脂組合物所構成者,在對如此的保護膜施行雷射刻印的情形,一般來說,即使雷射輸出較弱,也能良好地印字在保護膜。 [先前技術文獻] [專利文獻]The above-mentioned protective film is generally composed of a black resin composition. In the case of performing laser marking on such a protective film, in general, even if the laser output is weak, it can be well printed on the protective film. [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本特開2006-140348號公報[Patent Document 1] Japanese Patent Laid-Open No. 2006-140348
[發明所欲解決之問題][Problems to be solved by the invention]
近年有提案對作為工件的半導體晶圓、玻璃板等施行雷射刻印。在對如此無機材料施行雷射刻印的情形,容易發生不能良好地進行印字、所形成的印字變粗亂、印字的精密度變低的問題。In recent years, there have been proposals to perform laser marking on semiconductor wafers, glass plates, etc. as workpieces. In the case of performing laser marking on such an inorganic material, problems such as poor printing cannot be performed, the formed printing becomes coarse and messy, and the precision of the printing becomes low.
又,在如上述對無機材料施行雷射刻印的情形,雷射的輸出有必要變得較大,因此,切割片的基材容易燒焦。這樣一來,該燒焦的部分的透光率下降,使得無法良好地視認形成在工件的印字。又當切割片的黏著劑層是紫外線硬化性的情形,在使該黏著劑層紫外線硬化時,在基材的燒焦部分的紫外線透過性變差,結果,該部分的黏著劑層不能充分硬化,產生黏著劑附著在撿拾後的晶片的殘餘糊渣的問題。In addition, in the case of performing laser marking on an inorganic material as described above, the laser output needs to be large, and therefore, the base material of the dicing sheet is easily burnt. As a result, the light transmittance of the burnt portion is reduced, so that the printing formed on the workpiece cannot be well recognized. In addition, when the adhesive layer of the dicing sheet is ultraviolet-curable, when the adhesive layer is ultraviolet-cured, the ultraviolet transmittance of the scorched portion of the substrate becomes poor, and as a result, the adhesive layer of this portion cannot be sufficiently cured , There is a problem that the adhesive adheres to the residual paste residue of the picked up wafer.
本發明是鑑於上述之實際情況所形成,以提供雷射刻印性優良且對雷射光有耐受性的工件加工用片材為目的。 [解決問題之技術手段]The present invention is formed in view of the above-mentioned actual situation, and aims to provide a sheet for workpiece processing excellent in laser marking property and resistant to laser light. [Technical means to solve the problem]
為了達成上述目的,第一,本發明提供一種工件加工用片材,其為至少具有基材、與積層於該基材的第1面側的黏著劑層之工件加工用片材,其特徵在於,在該基材的第2面的算術平均粗糙度(Ra)為0.01 μm以上、0.4 μm以下,在該基材的第2面的最大高度粗糙度(Rz)為0.01 μm以上、2.5 μm以下,該基材的波長532 nm的透光率為40%以上(發明1)。In order to achieve the above object, first, the present invention provides a sheet for workpiece processing, which is a sheet for workpiece processing having at least a base material and an adhesive layer stacked on the first surface side of the base material, characterized in that , The arithmetic average roughness (Ra) on the second surface of the substrate is 0.01 μm or more and 0.4 μm or less, and the maximum height roughness (Rz) on the second surface of the substrate is 0.01 μm or more and 2.5 μm or less The light transmittance of this substrate at a wavelength of 532 nm is 40% or more (Invention 1).
上述發明(發明1)中,由於基材的物性如上所述,因此雷射刻印所使用的雷射光,特別是波長532 nm的雷射光,容易透過基材、甚至工件加工用片材。因此,可對工件良好地進行以雷射刻印的印字,可形成精密度高的印字。又,在基材中,雷射光的能量難以被吸收,可抑制基材燒焦而被印字。因此,沒有起因於基材燒焦所造成的透光率下降,通過工件加工用片可以良好地視認形成於工件的印字。In the above invention (Invention 1), since the physical properties of the substrate are as described above, the laser light used for laser marking, especially the laser light with a wavelength of 532 nm, easily passes through the substrate or even the sheet for processing a workpiece. Therefore, the laser-engraved printing can be performed well on the workpiece, and high-precision printing can be formed. In addition, in the base material, the energy of the laser light is difficult to be absorbed, and the base material can be prevented from being burnt and printed. Therefore, there is no decrease in light transmittance caused by scorching of the base material, and the printing formed on the workpiece can be well recognized by the sheet for processing the workpiece.
上述發明(發明1)中,上述基材的波長400 nm的透光率以40%以上為佳(發明2)。In the above invention (Invention 1), the light transmittance of the substrate at a wavelength of 400 nm is preferably 40% or more (Invention 2).
上述發明(發明1、2)中,上述基材的波長800 nm的透光率以45%以上為佳(發明3)。In the above inventions (Inventions 1 and 2), the light transmittance of the substrate at a wavelength of 800 nm is preferably 45% or more (Invention 3).
上述發明(發明1~3)中的工件加工用片材,較佳為其用於包含隔著該工件加工用片材對工件進行雷射刻印的步驟之用途(發明4)。The sheet for workpiece processing in the above inventions (Inventions 1 to 3) is preferably used for the purpose of including the step of laser marking the workpiece via the sheet for workpiece processing (Invention 4).
上述發明(發明1~4)中的工件加工用片材,較佳為其用於切割(發明5)。The sheet for workpiece processing in the above inventions (Inventions 1 to 4) is preferably used for cutting (Invention 5).
上述發明(發明5)中的工件加工用片材,較佳為其用於隱形切割(stealth dicing) (發明6)。 [發明之效果]The sheet for workpiece processing in the above invention (Invention 5) is preferably used for stealth dicing (Invention 6). [Effect of invention]
本發明之工件加工用片材,不僅雷射刻印性優良,對雷射光也具有耐受性。The sheet for workpiece processing of the present invention not only has excellent laser marking performance, but also has resistance to laser light.
以下對於本發明之實施態樣進行說明。
第1圖為本發明之一實施態樣之工件加工用片材的剖面圖。如第1圖所示,本實施態樣之工件加工用片材1具有基材2、積層在基材2的第1面側(第1圖中、上方側)的黏著劑層3、以及積層在黏著劑層3上的剝離片6而構成。剝離片6是在工件加工用片材1的使用時剝離去除、直到那時為止都保護黏著劑層3者,其在本實施態樣的工件加工用片材1中也可以省略。在此,在基材2中的黏著劑層3側的面稱為「第1面」,其相反側的面(第1圖中,下方的面)稱為「第2面」。The embodiment of the present invention will be described below.
Fig. 1 is a cross-sectional view of a sheet for workpiece processing according to an embodiment of the present invention. As shown in FIG. 1, the workpiece processing sheet 1 of the present embodiment includes a
本實施態樣之工件加工用片材1,作為一例可列舉,在對於作為工件的半導體晶圓、玻璃板等進行的雷射刻印步驟及切割步驟中為了維持工件所使用者,但不限定於此。The sheet 1 for workpiece processing of the present embodiment can be exemplified as a user who maintains the workpiece in the laser marking step and the dicing step performed on the semiconductor wafer, glass plate, etc. as the workpiece, but it is not limited to this.
又,在本實施態樣之雷射刻印,除了半導體晶圓、玻璃板等的無機材料所構成的構件之外,積層於此等的保護膜、接著劑層等、或者由封裝的表層等的有機材料所構成的構件,也可以成為對象。In addition, in the laser marking of the present embodiment, in addition to a member made of an inorganic material such as a semiconductor wafer or a glass plate, a protective film, an adhesive layer, etc., or a surface layer of a package, etc. are laminated Components made of organic materials can also be targeted.
本實施態樣之工件加工用片材1,通常是形成長條狀而捲成輥狀,以捲對捲(roll-to-roll)方式使用。The sheet 1 for workpiece processing of the present embodiment is usually formed into a long shape and rolled into a roll shape, and is used in a roll-to-roll manner.
1.工件加工用片材的構成構件
(1) 基材
(1-1) 物性
在基材2的第2面(以下有稱為「基材2的背面」的情形)中的算術平均粗糙度(Ra)為0.01 μm以上、0.4 μm以下,最大高度粗糙度(Rz)為0.01 μm以上、2.5 μm以下。又,基材2的波長532 nm的透光率為40%以上。在本說明書中的算術平均粗糙度(Ra)及最大高度粗糙度(Rz)是根據JIS B0601:1999所測定者。又,在本說明書中的透光率是使用分光光度計作為測定器具,以直接受光法測定者。任一測定方法的詳細作法如後述的試驗例所示。1. Constituent members of the sheet for workpiece processing
(1) Base material
(1-1) Physical properties
The arithmetic average roughness (Ra) in the second surface of the base material 2 (hereinafter referred to as the "back surface of the
基材2的第2面的算術平均粗糙度(Ra)及最大高度粗糙度(Rz)在上述範圍,且基材2的波長532 nm的透光率在上述範圍,藉此,雷射刻印所使用的雷射光,特別是波長532 nm的雷射光,容易透過基材2、甚至工件加工用片材1。因此,對工件可良好地進行歷用雷射刻印的印字,可形成精密度高的印字。又,基材2中雷射光的能量難以被吸收,可抑制基材2燒焦而被印字。因此,沒有起因於基材2燒焦所造成的透光性的下降,可以通過工件加工用片材1良好地視認形成在工件的印字。再者,在黏著劑層3是由紫外線硬化性黏著劑所構成的情形,在通過基材2而對黏著劑層3照射紫外線時,該紫外線沒有問題地到達黏著劑層3,黏著劑層3良好硬化。因此,難以發生黏著劑附著在撿拾後的晶片的殘餘糊渣的問題。亦即,本實施態樣之工件加工用片材1的雷射刻印性優良且對雷射光具有耐受性。The arithmetic average roughness (Ra) and the maximum height roughness (Rz) of the second surface of the
再者,藉由基材2滿足上述物性,在隱形切割使用的雷射光的透過性也變得良好,成為隱形切割的加工性優良者。In addition, when the
又,藉由基材2的第2面的算術平均粗糙度(Ra)及最大高度粗糙度(Rz)在上述範圍,也可抑制工件加工用片材1的黏連黏連(blocking)。亦即,可良好地進行從工件加工用片材1的捲取體的放出,且放出之時難以發生非意欲的在界面的剝離。In addition, the arithmetic average roughness (Ra) and the maximum height roughness (Rz) of the second surface of the
在基材2的背面的算術平均粗糙度(Ra)的上限值,如上述,為0.4 μm以下,較佳為0.2 μm以下,特佳為未滿0.1 μm。算術平均粗糙度(Ra)超過0.4 μm時,基材2的背面的凹凸會妨礙雷射光的透過。另一方面,算術平均粗糙度(Ra)的下限值,從防止黏連的觀點,為0.01 μm以上,較佳為0.015 μm以上。The upper limit of the arithmetic average roughness (Ra) on the back surface of the
又,在基材2的背面的最大高度粗糙度(Rz),如上述,為2.5 μm以下,較佳為1.5 μm以下,特佳為0.5 μm以下。最大高度粗糙度(Rz)超過2.5 μm時,基材2的背面的凹凸會妨礙雷射光的透過。另一方面,最大高度粗糙度(Rz)的下限值,從防止黏連的觀點,為0.01 μm以上,較佳為0.013 μm以上,特佳為0.1 μm以上。Moreover, the maximum height roughness (Rz) on the back surface of the
在基材2的第1面(以下有稱為「基材2的正面」的情形)積層黏著劑層3,基材2的正面的凹凸因黏著劑層3被填埋,所以基材2的正面的算術平均粗糙度(Ra)及最大高度粗糙度(Rz)沒有特別限定。然而,一旦該等的值過大,也有可能發生基材2的正面的凹凸不被黏著劑層3所填埋的情形,基材2的正面的算術平均粗糙度(Ra)的上限值,以2.5 μm以下為佳。基材2的正面的算術平均粗糙度(Ra)的下限值沒有特別限定,但在薄膜的製膜方法上,通常為0.01 μm以上。又,根據上述理由,基材2的正面的最大高度粗糙度(Rz)的上限值,以2.5 μm以下為佳。基材2的正面的最大高度粗糙度(Rz)的下限值沒有特別限定,但在薄膜的製膜方法上,通常為0.01 μm以上。The
基材2的波長532 nm的透光率,如上述,為40%以上,較佳為50%以上,特佳為60%以上,進一步更佳為75%以上。波長532 nm的透光率未滿40%時,在雷射刻印主要使用的雷射光(特別是波長532 nm的雷射光)的能量在基材2被吸收,在基材2容易發生燒焦。又,波長532 nm的透光率的上限值沒有特別限定,也可以是100%。As described above, the light transmittance of the
又,基材2的波長400 nm的透光率,以40%以上者為佳,以45%以上為更佳,特別是以50%以上為佳,進一步以75%以上為更佳。藉由波長400 nm的透光率為40%以上,成為可見光容易透過者,因此,通過基材2、甚至工件加工用片材1,可更良好地視認形成於工件的印字。In addition, the light transmittance of the
再者,基材2的波長800 nm的透光率,以45%以上者為佳,以55%以上為更佳,特別是以65%以上為佳,進一步以75%以上為更佳。藉由波長800 nm的透光率為45%以上,成為可見光容易透過者,因此,通過基材2、甚至工件加工用片材1,可更良好地視認形成於工件的印字。Furthermore, the light transmittance of the
(1-2)厚度
基材2的厚度,只要是在使用工件加工用片材1的各步驟中能適當地發揮作用,就沒有特別限定。具體而言,基材2的厚度,以20 μm以上為佳,特別是以25 μm以上為佳,進一步以50 μm以上為更佳。又,基材2的厚度,以450 μm以下為佳,特別是以400 μm以下特佳,進一步以350 μm以下為更佳。藉由基材2的厚度在上述範圍,可良好地維持工件的加工性及雷射光的透過性。(1-2) Thickness
The thickness of the
(1-3)材料
基材2,以由樹脂薄膜所構成為佳。作為構成基材2的樹脂薄膜的具體例,可列舉,例如,低密度聚乙烯(LDPE)膜、線型低密度聚乙烯(LLDPE)膜、高密度聚乙烯(HDPE)膜等的聚乙烯膜、聚丙烯膜、乙烯-丙烯共聚物膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、乙烯-降莰烯共聚物膜、降莰烯樹脂膜等的聚烯烴類膜;乙烯-乙酸乙烯酯共聚物膜、乙烯-(甲基)丙烯酸共聚物膜、乙烯-(甲基)丙烯酸酯共聚物膜等的乙烯類共聚膜;聚氯乙烯膜、氯乙烯共聚物膜等的聚氯乙烯類膜;聚對苯二甲酸乙二酯膜、聚對苯二甲酸丁二酯膜等的聚酯類膜;聚胺基甲酸乙酯(Polyurethane)膜;聚醯亞胺膜;聚苯乙烯膜;聚碳酸酯膜;氟樹脂膜等。又,也可使用此等的交聯膜、離子聚合物膜之類的修飾膜。再者,也可以是將上述膜之同種類或異種類複數積層而成的積層薄膜。又,本說明書中「(甲基)丙烯酸」表示丙烯酸及甲基丙烯酸兩者。對於其他類似用語也是相同。(1-3) Materials
The
上述之中,以聚烯烴類膜、聚氯乙烯類膜及乙烯類共聚膜為佳。聚烯烴類膜之中,以聚乙烯膜為佳,特別是以低密度聚乙烯(LDPE)膜為佳。又,聚氯乙烯類膜之中,以聚氯乙烯膜為特佳,乙烯類共聚膜之中,以乙烯-(甲基)丙烯酸共聚物膜為特佳。根據此等樹脂膜,容易滿足前述物性。又,此等樹脂膜,從延展性、工件貼附性、晶片剝離性等的觀點,也是較佳。Among the above, polyolefin-based films, polyvinyl chloride-based films, and ethylene-based copolymer films are preferred. Among the polyolefin-based films, a polyethylene film is preferred, and a low density polyethylene (LDPE) film is particularly preferred. Among the polyvinyl chloride-based films, polyvinyl chloride films are particularly preferred, and among the ethylene-based copolymer films, ethylene-(meth)acrylic acid copolymer films are particularly preferred. According to these resin films, the aforementioned physical properties are easily satisfied. In addition, these resin films are also preferable from the viewpoints of ductility, work attachment property, wafer peelability, and the like.
上述樹脂膜,以提升和積層於其表面的黏著劑層3的密著性為目的,可視需要在一表面或兩表面施行利用氧化法、凹凸化法等的表面處理、或者底漆處理。作為上述氧化法,可列舉,例如,電暈放電處理、電漿放電處理、鉻氧化處理(濕式)、火焰處理、熱風處理、臭氧、紫外線照射處理等,又,作為凹凸化法,可列舉,例如,噴砂法、熔射處理法等。For the purpose of improving the adhesiveness of the
又,基材2也可在上述樹脂之中含有著色劑、難燃劑、可塑劑、抗靜電劑、滑劑、填充材等的各種添加劑。In addition, the
(1-4)製造方法
構成基材2的樹脂膜,可利用根據樹脂膜的種類而決定之製造方法而製造,但主要是藉由押出成形的T字模(T-die)法所製造。為了製造具有上述的算術平均粗糙度(Ra)、最大高度粗糙度(Rz)及透光率的樹脂膜,在樹脂膜的製膜時有必要不捲入空氣(氣泡)。例如,可藉由在減壓下、真空下等押出成形,抑制上述的空氣捲入,而製造沒有氣泡痕跡的樹脂膜。又,調整在製膜時的冷卻輥等的各步驟的輥的表面粗糙度,也可以製造沒有氣泡痕跡的樹脂膜。但是,具有上述的算術平均粗糙度(Ra)、最大高度粗糙度(Rz)及透光率的樹脂膜的製造方法不限於此等。(1-4) Manufacturing method
The resin film constituting the
(2)黏著劑層
本實施態樣之工件加工用片材1所具備之黏著劑層3,可以是由活性能量線非硬化性黏著劑所構成,也可以是由活性能量線硬化性黏著劑所構成。作為活性能量線非硬化性黏著劑,以具有所期望的黏著力及再剝離性者為佳,也可使用,例如,丙烯酸類黏著劑、橡膠類黏著劑、矽酮類黏著劑、胺基甲酸乙酯類黏著劑、聚酯類黏著劑、聚乙烯醚類黏著劑等。這些之中,以在切割步驟等中可有效地抑制工件或加工物的脫落之丙烯酸類黏著劑為佳。(2) Adhesive layer
The
另一方面,活性能量線硬化性黏著劑,由於經活性能量線照射而黏著力下降,因此,在想要使工件或加工物和工件加工用片材1分離時,經由活性能量線照射,可容易分離。本實施態樣中,上述活性能量線硬化性黏著劑以紫外線硬化性黏著劑為佳。藉此,能夠使前述殘餘糊渣的抑制效果顯著化而被發揮。On the other hand, the active energy ray-curable adhesive has reduced adhesion due to the irradiation of the active energy ray. Therefore, when it is desired to separate the workpiece or the workpiece and the sheet 1 for workpiece processing, the active energy ray can be irradiated through the active energy ray. Easy to separate. In this embodiment, the active energy ray-curable adhesive is preferably an ultraviolet-curable adhesive. Thereby, the above-mentioned residual paste suppression effect can be made prominent and exerted.
構成黏著劑層3的活性能量線硬化性黏著劑,可以是以具有活性能量線硬化性的聚合物作為主成分者,也可以是以不具有活性能量線硬化性的聚合物和活性能量線硬化性的多官能單體及/或寡聚物的混合物作為主成分者。The active energy ray-curable adhesive constituting the
活性能量線硬化性黏著劑是以具有活性能量線硬化性的聚合物作為主成分之情形,以下說明之。The case where the active energy ray-curable adhesive contains a polymer having active energy ray-curable as a main component will be described below.
具有活性能量線硬化性的聚合物,以在側鏈導入具有活性能量線硬化性的官能基(活性能量線硬化性基)的(甲基)丙烯酸酯(共)聚合物(A) (以下也有稱為「活性能量線硬化型聚合物(A)」)為佳。此活性能量線硬化型聚合物(A),以使具有含官能基的單體單元之(甲基)丙烯酸類共聚物(a1)、和具有和該官能基鍵結的取代基之含不飽和基化合物(a2)進行反應所得者為佳。Active energy ray-curable polymer, a (meth)acrylate (co)polymer (A) with a functional group (active energy ray-curable group) having active energy ray hardening introduced into the side chain (there are also below) It is better to call it "active energy ray hardening polymer (A)"). This active energy ray-curable polymer (A) is such that the (meth)acrylic copolymer (a1) having a monomer unit containing a functional group and the substituent having a bond with the functional group contain unsaturation It is preferable that the base compound (a2) is reacted.
丙烯酸類共聚物(a1)由從含官能基單體所導入的構成單元、和從(甲基)丙烯酸酯單體或其衍生物所導入的構成單元所構成。The acrylic copolymer (a1) is composed of a structural unit introduced from a functional group-containing monomer, and a structural unit introduced from a (meth)acrylate monomer or a derivative thereof.
作為丙烯酸類共聚物(a1)的構成單元之含官能基單體,以在分子內具有聚合性的雙鍵、及羥基、胺基、取代胺基、環氧基等的官能基之單體為佳。As a functional group-containing monomer as a structural unit of the acrylic copolymer (a1), a monomer having a polymerizable double bond in the molecule and functional groups such as a hydroxyl group, an amine group, a substituted amine group, and an epoxy group is good.
作為上述含官能基單體的更具體之例,可列舉,例如,2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯、3-羥基丙基(甲基)丙烯酸酯、4-羥基丁基(甲基)丙烯酸酯等,此等可單獨或2種以上組合使用。More specific examples of the above functional group-containing monomers include, for example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (methyl ) Acrylate, 4-hydroxybutyl (meth)acrylate, etc., these can be used alone or in combination of two or more.
作為構成丙烯酸類共聚物(a1)的(甲基)丙烯酸酯單體,可使用烷基的碳數1~20的烷基(甲基)丙烯酸酯、環烷基(甲基)丙烯酸酯、苄基(甲基)丙烯酸酯。這些之中,特佳為使用烷基的碳數為1~18的烷基(甲基)丙烯酸酯,例如,(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸2-乙基己酯等。As the (meth)acrylate monomer constituting the acrylic copolymer (a1), an alkyl (meth)acrylate having 1 to 20 carbon atoms in the alkyl group, a cycloalkyl (meth)acrylate, benzyl can be used Based (meth)acrylate. Among these, it is particularly preferable to use an alkyl (meth)acrylate having an alkyl group having 1 to 18 carbon atoms, for example, methyl (meth)acrylate, ethyl (meth)acrylate, (meth)acrylic acid Propyl ester, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, etc.
丙烯酸類共聚物(a1),以通常3~100質量%、較佳5~40質量%的比例含有從上述含官能基單體所導入的構成單元,以通常0~97質量%、較佳60~95質量%的比例含有從(甲基)丙烯酸酯單體或其衍生物所導入的構成單元。The acrylic copolymer (a1) contains the structural unit introduced from the functional group-containing monomer at a ratio of usually 3 to 100% by mass, preferably 5 to 40% by mass, usually 0 to 97% by mass, preferably 60 The proportion of ~95% by mass contains the structural unit introduced from the (meth)acrylate monomer or its derivative.
可經由使上述含官能基單體、和(甲基)丙烯酸酯單體或其衍生物以常法共聚合而得到丙烯酸類共聚物(a1),但除了此等單體以外,也可共聚合二甲基丙烯醯胺、甲酸乙烯酯、乙酸乙烯酯、苯乙烯等。The acrylic copolymer (a1) can be obtained by copolymerizing the above-mentioned functional group-containing monomer and the (meth)acrylate monomer or its derivative by a conventional method, but in addition to these monomers, copolymerization is also possible Dimethacrylamide, vinyl formate, vinyl acetate, styrene, etc.
藉由使具有上述含官能基單體單元的丙烯酸類共聚物(a1)、和具有和該官能基鍵結的取代基之含不飽和基化合物(a2)進行反應,以得到活性能量線硬化型聚合物(A)。By reacting the acrylic copolymer (a1) having the functional group-containing monomer unit and the unsaturated group-containing compound (a2) having a substituent bonded to the functional group, an active energy ray hardening type is obtained Polymer (A).
含不飽和基化合物(a2)所具有的取代基,可根據丙烯酸類共聚物(a1)所具有的含官能基單體單元的官能基種類而適當選擇。例如,當官能基是羥基、胺基或取代胺基的情形,取代基以異氰酸酯基或環氧基為佳,當官能基是環氧基的情形,取代基以胺基、羧基或氮丙啶基(aziridinyl)為佳。The substituent contained in the unsaturated group-containing compound (a2) can be appropriately selected according to the type of the functional group of the functional group-containing monomer unit included in the acrylic copolymer (a1). For example, when the functional group is a hydroxyl group, an amine group, or a substituted amine group, the substituent is preferably an isocyanate group or an epoxy group, and when the functional group is an epoxy group, the substituent is an amine group, a carboxyl group, or aziridine Aziridinyl is preferred.
又,含不飽和基化合物(a2)中,每1分子含有1~5個、較佳為含有1~2個的活性能量線聚合性的碳-碳雙鍵。作為如此的含不飽和基化合物(a2)的具體例,可列舉,例如,2-甲基丙烯醯氧基乙基異氰酸酯、間-異丙烯基-α,α-二甲基苄基異氰酸酯、甲基丙烯醯基異氰酸酯、烯丙基異氰酸酯、1,1-(雙丙烯醯氧基甲基)乙基異氰酸酯;藉由二異氰酸酯化合物或多元異氰酸酯化合物(polyisocyanate compound)和羥基乙基(甲基)丙烯酸酯的反應所得到的丙烯醯基單異氰酸酯化合物;藉由二異氰酸酯化合物或多元異氰酸酯化合物、和多元醇(polyol)化合物、和羥基乙基(甲基)丙烯酸酯的反應所得到的丙烯醯基單異氰酸酯化合物;(甲基)丙烯酸環氧丙酯(glycidyl(metha)acrylate);(甲基)丙烯酸、2-(1-氮丙啶基)乙基(甲基)丙烯酸酯、2-乙烯基-2-噁唑啉(2-vinyl-2-oxazoline)、2-異丙烯基-2-噁唑啉等。In addition, the unsaturated group-containing compound (a2) contains 1 to 5, preferably 1 to 2, active energy ray polymerizable carbon-carbon double bonds per molecule. Specific examples of such an unsaturated group-containing compound (a2) include, for example, 2-methacryloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, methyl Acryloyl cyanoisocyanate, allyl isocyanate, 1,1-(bisacryloyloxymethyl) ethyl isocyanate; by diisocyanate compound or polyisocyanate compound and hydroxyethyl (meth) acrylic acid Acryloyl monoisocyanate compound obtained by reaction of ester; Acryloyl monoisocyanate compound obtained by reaction of diisocyanate compound or polyisocyanate compound with polyol compound and hydroxyethyl (meth)acrylate Isocyanate compounds; glycidyl (metha)acrylate; (meth)acrylic acid, 2-(1-aziridinyl)ethyl (meth)acrylate, 2-vinyl- 2-vinyl-2-oxazoline, 2-isopropenyl-2-oxazoline, etc.
含不飽和基化合物(a2),相對於上述丙烯酸類共聚物(a1)的含官能基單體,以通常10~100 mol%,較佳為20~95 mol%的比例使用。The unsaturated group-containing compound (a2) is used at a ratio of usually 10 to 100 mol%, preferably 20 to 95 mol% relative to the functional group-containing monomer of the acrylic copolymer (a1).
丙烯酸類共聚物(a1)和含不飽和基化合物(a2)的反應中,可根據官能基和取代基的組合,適當選擇反應的溫度、壓力、溶劑、時間、觸媒的有無、觸媒的種類。因此,存在於丙烯酸類共聚物(a1)中的官能基和含不飽和基化合物(a2)中的取代基反應,使不飽和基導入丙烯酸類共聚物(a1)中的側鏈,得到活性能量線硬化型聚合物(A)。In the reaction of the acrylic copolymer (a1) and the unsaturated group-containing compound (a2), the reaction temperature, pressure, solvent, time, presence or absence of catalyst, and catalyst can be appropriately selected according to the combination of functional groups and substituents species. Therefore, the functional group present in the acrylic copolymer (a1) reacts with the substituent in the unsaturated group-containing compound (a2) to introduce the unsaturated group into the side chain in the acrylic copolymer (a1) to obtain active energy Linear hardening polymer (A).
如此所得到的活性能量線硬化型聚合物(A)的重量平均分子量,以1萬以上為佳,特別是以15萬~150萬為佳,進一步以20萬~100萬為更佳。又,在本說明書中的重量平均分子量(Mw)是根據膠體滲透層析法(GPC法)所測定的聚苯乙烯所換算的值。The weight average molecular weight of the active energy ray-curable polymer (A) thus obtained is preferably 10,000 or more, particularly 150,000 to 1.5 million, and more preferably 200,000 to 1 million. In addition, the weight average molecular weight (Mw) in this specification is the value converted from the polystyrene measured by the colloidal permeation chromatography method (GPC method).
即使是在活性能量線硬化性黏著劑是以具有活性能量線硬化性的聚合物作為主成分的情形,活性能量線硬化性黏著劑也可更含有活性能量線硬化性的單體及/或寡聚物(B)。Even when the active energy ray-curable adhesive is a polymer having active energy ray-curable as a main component, the active energy ray-curable adhesive may further contain active energy ray-curable monomers and/or oligomers Polymer (B).
作為活性能量線硬化性的單體及/或寡聚物(B),可使用,例如,多元醇和(甲基)丙烯酸的酯類等。As the active energy ray-curable monomer and/or oligomer (B), for example, esters of polyhydric alcohol and (meth)acrylic acid can be used.
作為如此的活性能量線硬化性的單體及/或寡聚物(B),可列舉,例如,環己基(甲基)丙烯酸酯、異莰基(甲基)丙烯酸酯等的單官能性丙烯酸酯類、三羥甲基丙烷三(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、二羥甲基三環癸基二(甲基)丙烯酸酯等的多官能性丙烯酸酯類、聚酯寡(甲基)丙烯酸酯(polyester oligo (meth)acrylate)、聚胺基甲酸乙酯寡(甲基)丙烯酸酯(polyurethane oligo (meth)acrylate)等。Examples of such active energy ray-curable monomers and/or oligomers (B) include, for example, monofunctional acrylics such as cyclohexyl (meth)acrylate and isobranched (meth)acrylate. Esters, trimethylolpropane tri(meth)acrylate, neopentaerythritol tri(meth)acrylate, neopentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth) Acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, polyethylene glycol di(meth)acrylate, dimethylol tris Multifunctional acrylates such as cyclodecyl di(meth)acrylate, polyester oligo (meth)acrylate, polyurethane oligo(meth)acrylate (polyurethane oligo (meth)acrylate), etc.
在調配活性能量線硬化性的單體及/或寡聚物(B)的情形,活性能量線硬化性黏著劑中的活性能量線硬化性的單體及/或寡聚物(B)的含量,以5~80質量%為佳,特別是以20~60質量%為佳。In the case of formulating active energy ray-curable monomers and/or oligomers (B), the content of active energy ray-curable monomers and/or oligomers (B) in the active energy ray-curable adhesive , Preferably 5 to 80% by mass, especially 20 to 60% by mass.
在此,在使用紫外線作為用以使活性能量線硬化性樹脂組合物硬化的活性能量線的情形中,以添加光聚合起始劑(C)者為佳,藉由此光聚合起始劑(C)的使用,可減少聚合硬化時間及光線照射量。Here, in the case of using ultraviolet rays as the active energy ray for curing the active energy ray-curable resin composition, it is preferable to add a photopolymerization initiator (C), whereby the photopolymerization initiator ( The use of C) can reduce polymerization hardening time and light exposure.
作為光聚合起始劑(C),可列舉,例如,二苯基酮(benzophenone)、乙醯苯(acetophenone)、苯偶姻(benzoin)、苯偶姻甲醚(benzoin methyl ether)、苯偶姻乙醚(benzoin ethyl ether)、苯偶姻異丙醚(, benzoin isopropyl ether)、苯偶姻異丁醚(benzoin isobutyl ether)、苯偶姻安息香酸(benzoin benzoic acid)、苯偶姻安息香酸甲酯(benzoin methyl benzoate)、苯偶姻二甲基縮酮(benzoin dimethyl ketal)、2,4-二乙基硫雜蒽酮(2,4-diethyl thioxanthone)、1-羥基環己基苯基酮(1-hydroxycyclohexyl phenyl ketone)、苄基二苯基硫醚(benzyl diphenyl sulfide)、一硫化四甲基秋蘭姆(tetramethylthiuram monosulfide)、偶氮雙異丁腈(azobisisobutyronitrile)、二苯基乙二酮(benzil)、聯苄(dibenzil)、聯乙醯(diacetyl)、β-氯蒽醌(β-chloroanthraquinone)、(2,4,6-三甲基苄基二苯基)膦氧化物((2,4,6-trimethylbenzyldiphenyl) phosphine oxide)、2-苯并噻唑-N,N-二乙基二硫代胺基甲酸(2-benzothiazole-N, N-diethyldithiocarbamate)、寡{2-羥基-2-甲基-1-[4-(1-丙烯基)苯基]丙酮} (oligo {2-hydroxy-2-methyl-1- [4- (1-propenyl) phenyl] propanone})、2,2-二甲氧基-1,2-二苯基乙烷-1-酮(2,2-dimethoxy-1,2-diphenylethane-1-one)等。這些可單獨使用,也可組合2種以上使用。Examples of the photopolymerization initiator (C) include, for example, benzophenone, acetophenone, benzoin, benzoin methyl ether, and benzoin Benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid, benzoin benzoic acid Ester (benzoin methyl benzoate), benzoin dimethyl ketal (benzoin dimethyl ketal), 2,4-diethyl thioxanthone (2,4-diethyl thioxanthone), 1-hydroxycyclohexyl phenyl ketone ( 1-hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, diphenylethanedione ( benzil), dibenzil, diacetyl, β-chloroanthraquinone, (2,4,6-trimethylbenzyldiphenyl) phosphine oxide ((2, 4,6-trimethylbenzyldiphenyl) phosphine oxide), 2-benzothiazole-N, N-diethyldithiocarbamate, oligo(2-hydroxy-2-methyl Yl-1-[4-(1-propenyl)phenyl]acetone} (oligo {2-hydroxy-2-methyl-1- [4- (1-propenyl) phenyl] propanone}), 2,2-di Methoxy-1,2-diphenylethane-1-one (2,2-dimethoxy-1,2-diphenylethane-1-one), etc. These may be used alone or in combination of two or more.
光聚合起始劑(C),相對於活性能量線硬化型聚合物(A) (在調配活性能量線硬化性的單體及/或寡聚物(B)的情形中,活性能量線硬化型聚合物(A)及活性能量線硬化性的單體及/或寡聚物(B)的總計量為100質量份) 100質量份,以0.1~10質量份、特別是0.5~6質量份的範圍的量使用為佳。Photopolymerization initiator (C), relative to active energy ray-curable polymer (A) (in the case of formulating active energy ray-curable monomers and/or oligomers (B), active energy ray-curable type The total weight of the polymer (A) and the active energy ray-curable monomer and/or oligomer (B) is 100 parts by mass) 100 parts by mass, 0.1 to 10 parts by mass, especially 0.5 to 6 parts by mass The amount of range is preferably used.
在活性能量線硬化性黏著劑中,除上述成分外,也可適當調配其他成分。作為其他成分,可列舉,例如,不具活性能量線硬化性的聚合物成分或寡聚物成分(D)、交聯劑(E)等。In the active energy ray-curable adhesive, in addition to the above-mentioned components, other components may be appropriately formulated. Examples of other components include a polymer component or oligomer component (D) that does not have active energy ray-curable properties, and a crosslinking agent (E).
作為不具活性能量線硬化性的聚合物成分或寡聚物成分(D),可列舉,例如,聚丙烯酸酯、聚酯、聚胺基甲酸乙酯、聚碳酸酯、聚烯烴等,以重量平均分子量(Mw)為3000~250萬的聚合物或寡聚物為佳。Examples of the polymer component or oligomer component (D) having no active energy ray-curable property include, for example, polyacrylate, polyester, polyurethane, polycarbonate, polyolefin, etc. A polymer or oligomer with a molecular weight (Mw) of 30 to 2.5 million is preferred.
作為交聯劑(E),可使用多官能性化合物,這些多官能性化合物具有和活性能量線硬化型聚合物(A)等所具有之官能基的反應性。作為如此得多官能性化合物之例,可列舉,異氰酸酯化合物、環氧化合物、胺化合物、三聚氰胺(melamine)化合物、氮丙啶(aziridine)化合物、聯胺化合物(hydrazine)、醛化合物、噁唑啉(oxazoline)化合物、金屬烷氧(metal alkoxide)化合物、金屬螯合化合物、金屬鹽、銨鹽、反應性酚樹脂等。As the crosslinking agent (E), polyfunctional compounds can be used, and these polyfunctional compounds have reactivity with functional groups possessed by the active energy ray-curable polymer (A) and the like. Examples of such multifunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, and oxazolines. (oxazoline) compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts, reactive phenol resins, etc.
藉由將此等其他成分(D)、(E)調配於活性能量線硬化性黏著劑中,可以改善硬化前的黏著性及剝離性、硬化後的強度、和其他層的接著性、保存穩定性等。此等其他成分的調配量沒有特別限定,可在相對於活性能量線硬化型聚合物(A) 100質量份為0~40質量份的範圍適當決定。By blending these other components (D) and (E) in an active energy ray-curable adhesive, the adhesion and peelability before curing, the strength after curing, the adhesion to other layers, and storage stability can be improved Sex and so on. The formulation amount of these other components is not particularly limited, and can be appropriately determined within a range of 0 to 40 parts by mass relative to 100 parts by mass of the active energy ray-curable polymer (A).
然後,對於活性能量線硬化性黏著劑以不具活性能量線硬化性的聚合物成分和活性能量線硬化性的多官能單體及/或寡聚物的混合物作為主成分的情形,於下說明之。Then, in the case where the active energy ray-curable adhesive has a mixture of a polymer component that is not active energy ray-curable and an active energy ray-curable polyfunctional monomer and/or oligomer as the main component, the following description .
作為不具活性能量線硬化性的聚合物成分,可使用,例如,和上述丙烯酸類共聚物(a1)的相同成分。在活性能量線硬化性樹脂組合物中的不具活性能量線硬化性的聚合物成分的含量,以20~99.9質量%為佳,特別是以30~80質量%為佳。As the polymer component having no active energy ray hardening property, for example, the same component as the acrylic copolymer (a1) described above can be used. The content of the polymer component having no active energy ray-curable in the active energy ray-curable resin composition is preferably 20 to 99.9% by mass, and particularly preferably 30 to 80% by mass.
作為活性能量線硬化性的多官能單體及/或寡聚物,可選擇和上述成分(B)相同者。不具活性能量線硬化性的聚合物成分和活性能量線硬化性的多官能單體及/或寡聚物的調配比例為,相對於聚合物成分100質量份,多官能單體及/或寡聚物以10~150質量份為佳,特別是以25~100質量份為佳。As the active energy ray-curable polyfunctional monomer and/or oligomer, the same as the aforementioned component (B) can be selected. The blending ratio of the polymer component without active energy ray hardening and the polyfunctional monomer and/or oligomer with active energy ray hardening is, based on 100 parts by mass of the polymer component, the polyfunctional monomer and/or oligomer The object is preferably 10 to 150 parts by mass, especially 25 to 100 parts by mass.
即使在此情形,和上述相同,可適當調配光聚合起始劑(C)、交聯劑(E)等。Even in this case, as in the above, the photopolymerization initiator (C), crosslinking agent (E), etc. can be appropriately prepared.
黏著劑層3的厚度,只要能在使用工件加工用片材1的各步驟中發揮適當的作用,就沒有特別限定。具體而言,以1~50 μm為佳,特別是以2~30 μm為佳,進一步以3~20 μm為更佳。The thickness of the
(3)剝離片
在本實施態樣中的剝離片6,在直到工件加工用片材1被使用之前保護黏著劑層3。在本實施態樣中的剝離片6,是直接積層於黏著劑層3上,但並不限於此等,也可以在黏著劑層3上積層其他的層(晶粒接合薄膜等),並在該其他的層上積層剝離片6。(3) Peel off piece
In the present embodiment, the
剝離片6的構成是任意的,可例示,例如,藉由剝離劑等對塑膠薄膜進行剝離處理而成者。作為塑膠薄膜的具體例,可列舉聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯等的聚酯膜,及聚丙烯或聚乙烯等的聚烯烴膜。作為剝離劑,可使用矽酮類、氟類、長鏈烷基類等,但這些之中,以便宜而可得到穩定性能的矽酮類為佳。剝離片的厚度沒有特別限制,通常為約20~250 μm。The structure of the
(4)其他的構件
在本實施態樣之工件加工用片材1,也可在黏著劑層3的和基材2相反側的面(以下有稱為「黏著面」的情形),積層接著劑層。在此情形,本實施態樣之工件加工用片材1藉由具有上述接著劑層,而可作為切割‧晶粒接合片材(dicing‧die bonding sheet)使用。如此的切割‧晶粒接合片材,在接著劑層的和黏著劑層相反側的面貼附工件,同時切割該工件和接著劑層,藉此可得到積層單片化的接著劑層的晶片。該晶片藉由此單片化接著劑層,可容易地固定於搭載該晶片的對象。作為構成上述接著劑層的材料,較佳為使用含有熱塑性樹脂和低分子量的熱硬化性接著成分者、或含有B階段(半硬化狀)的熱硬化型接著成分者等。(4) Other components
In the sheet 1 for workpiece processing of the present embodiment, an adhesive layer may be stacked on the surface of the
又,在本實施態樣之工件加工用片材1,也可以在黏著劑層3中的黏著面積層保護膜形成層。在此情形,本實施態樣之工件加工用片材1可作為保護膜形成及切割用片材使用。如此的保護膜形成及切割用片材,在保護膜形成層的和黏著劑層相反側的面貼附工件,同時切割該工件和保護膜形成層,藉此可得到積層單片化的保護膜形成層的晶片。作為該被切斷物,以使用在一表面形成電路者為佳,在此情形,通常在和形成該電路的面相反側的面積層保護膜形成層。單片化的保護膜形成層在設定的時間點(較佳為切割步驟前)使其硬化,藉此可在工件或晶片形成具有充分耐久性的保護膜。保護膜形成層由未硬化的硬化性接著劑所構成為佳。In addition, in the sheet 1 for workpiece processing of the present embodiment, a protective film may be formed on the adhesive area of the
在上述情形,雷射刻印的對象不是工件本身,而是接著劑層或保護膜。但是,即使是在這些情形,同樣能得到上述優良的雷射刻印性和雷射光耐受性的效果。In the above situation, the object of laser marking is not the workpiece itself, but the adhesive layer or protective film. However, even in these cases, the effects of excellent laser marking property and laser light resistance described above can also be obtained.
2.工件加工用片材的製造方法
作為製造工件加工用片材1的一例,可在剝離片6的剝離面,塗佈構成黏著劑層3的黏著劑和視需要而進一步含有溶劑的黏著劑層用的塗佈劑,並使此塗佈劑乾燥而形成黏著劑層3。之後,在黏著劑層3的露出面壓接基材2,得到由基材2、黏著劑層3及剝離片6所構成的工件加工用片材1。2. Manufacturing method of sheet for workpiece processing
As an example of manufacturing the sheet 1 for processing a workpiece, the peeling surface of the
在本實施態樣之黏著劑層3,以可貼附導線框架等的模具者為佳。在此情形,黏著劑層3由活性能量線硬化性黏著劑所構成時,以不使活性能量線硬化性黏著劑硬化為佳。藉此,可將對導線框架等的模具的接著力維持在較高程度。In the
基材2及黏著劑層3的積層體,也可根據需求進行半切割(half-cut),而形成所期望的形狀,例如,對應工件(半導體晶圓)的圓形等的形狀。在此情形,經半切割所產生的殘餘部分可適當去除。The laminate of the
3.工件加工用片材的使用方法 本實施態樣之工件加工用片材1,以用於切割為佳。作為切割的種類,可列舉,例如,刀片切割、隱形切割、電漿切割、雷射切割、水刀切割等,這些之中,以刀片切割及隱形切割為佳。作為工件,可列舉,例如,由無機材料所構成的半導體晶圓、玻璃板等之外,及各種封裝等,但不限定於此等。3. How to use sheets for workpiece processing The sheet 1 for workpiece processing in this embodiment is preferably used for cutting. Examples of types of cutting include blade cutting, stealth cutting, plasma cutting, laser cutting, and water jet cutting. Among these, blade cutting and stealth cutting are preferred. Examples of the work include, for example, semiconductor wafers and glass plates made of inorganic materials, and various types of packages, but are not limited thereto.
使用本實施態樣之工件加工用片材1,從作為工件的半導體晶圓,經刀片切割或隱形切割製造晶片之方法,於下說明其中一例。A method of manufacturing a wafer from a semiconductor wafer that is a workpiece by blade cutting or stealth cutting using the sheet 1 for processing a workpiece of the present embodiment will be described below as an example.
首先,將已捲取成輥狀的工件加工用片材1一邊剝離剝離片6一邊陸續放出,如第2圖所示,在工件加工用片材1的黏著劑層3貼附半導體晶圓7及導線框架8。藉此得到具有在工件加工用片材1的黏著劑層3側的面積層半導體晶圓7及導線框架8的結構之積層結構體(以下有稱為「積層結構體L」的情形)。First, the sheet 1 for workpiece processing wound into a roll shape is successively released while peeling off the
然後,將積層結構體L進行雷射刻印步驟。具體而言,使用雷射刻印用的雷射照射裝置,對上述半導體晶圓7通過工件加工用片材1照射雷射光,在半導體晶圓7施行所期望的印字。作為雷射光,主要使用波長532 nm的雷射光。Then, the laminated structure L is subjected to a laser marking step. Specifically, using a laser irradiation device for laser marking, the semiconductor wafer 7 is irradiated with laser light through the work processing sheet 1 to perform desired printing on the semiconductor wafer 7. As the laser light, laser light with a wavelength of 532 nm is mainly used.
本實施態樣之工件加工用片材1中,由於基材2的物性如前述所設定,雷射光容易透過,因此可對工件良好地進行雷射刻印的印字,可形成精密度高的印字。又,在基材2中雷射光的能量難以被吸收,所以可抑制基材2燒焦。因此,沒有起因於基材2燒焦所造成的透光性下降,可通過工件加工用片材1良好地視認形成於工件的印字。In the sheet 1 for workpiece processing of the present embodiment, since the physical properties of the
然後,將積層結構體L進行切割步驟。在刀片切割的情形,使用切割刀片,切斷半導體晶圓7而分割,藉此得到晶片。之後,實施使工件加工用片材1伸長的延展步驟,以成為在之後的撿拾步驟容易撿拾的狀態,而擴大晶片間的間隔。Then, the laminated structure L is subjected to a cutting step. In the case of blade dicing, a dicing blade is used to cut the semiconductor wafer 7 and divide it, thereby obtaining a wafer. After that, an extension step for extending the workpiece processing sheet 1 is performed so as to be easily picked up in the subsequent pickup step, and the interval between the wafers is enlarged.
另一方面,在隱形切割的情形,使用分割加工用雷射照射裝置(雷射切割機),對上述半導體晶圓7通過工件加工用片材1照射雷射光,在半導體晶圓7內形成改質層。又,由於基材2的物性如前述所設定,雷射切割機的雷射光的透過性也優良。之後,藉由實施使工件加工用片材1伸長的延展步驟,將作用力(主面內方向的拉力)施加至半導體晶圓7。結果,分割黏貼於工件加工用片材1的半導體晶片7,而得到晶片。On the other hand, in the case of invisible dicing, a laser irradiation device (laser dicing machine) for division processing is used to irradiate the semiconductor wafer 7 with the laser light through the work processing sheet 1 to form a reformation in the semiconductor wafer 7. Quality layer. In addition, since the physical properties of the
然後,使用撿拾裝置,從工件加工用片材1撿拾晶片。在此,在工件加工用片材1的黏著劑層3是由活性能量線硬化性的黏著劑所構成的情形,較佳為在上述撿拾之前,通過基材2對黏著劑層3照射活性能量線。藉此,可使黏著劑層3的黏著力下降,能夠容易地進行晶片的撿拾。上述活性能量線通常是使用紫外線、電子線等,特別是以容易取得的紫外線為佳。Then, using a pickup device, the wafer is picked up from the workpiece processing sheet 1. Here, in the case where the
上述紫外線的照射,可藉由高壓水銀燈、無極燈(fusion lamp)、氙燈、LED等而進行,紫外線的照射量,以照度為50 mW/cm2 以上、1000 mW/cm2 以下為佳。紫外線的光量,以50 mJ/cm2 以上為佳,特別是以80 mJ/cm2 以上為佳,進一步以100 mJ/cm2 以上為更佳。又,紫外線的光量,以2000 mJ/cm2 以下為佳,特別是以1000 mJ/cm2 以下為佳,進一步以500 mJ/cm2 以下為更佳。The irradiation of the above-mentioned ultraviolet rays can be performed by a high-pressure mercury lamp, a fusion lamp, a xenon lamp, an LED, etc. The irradiation amount of the ultraviolet rays is preferably 50 mW/cm 2 or more and 1000 mW/cm 2 or less. The amount of ultraviolet light is preferably 50 mJ/cm 2 or more, particularly 80 mJ/cm 2 or more, and more preferably 100 mJ/cm 2 or more. In addition, the amount of ultraviolet light is preferably 2000 mJ/cm 2 or less, particularly preferably 1000 mJ/cm 2 or less, and further preferably 500 mJ/cm 2 or less.
如前所述,由於起因於雷射刻印的基材2的燒焦受到抑制,所以即使如上述通過基材2對黏著劑層3照射紫外線,也可以使黏著劑層3良好地硬化。因此,不易發生在撿拾後的晶片附著黏著劑的殘餘糊渣的問題。As described above, since the scorching of the
以上說明之實施態樣是為了用以容易理解本發明而記載,並非用於限定本發明而記載。因此,上述實施態樣所揭示之各要件,也包含屬於本發明技術範圍的所有的設計變更或均等物。The embodiments described above are described for easy understanding of the present invention, and are not intended to limit the present invention. Therefore, the requirements disclosed in the above embodiments also include all design changes or equivalents that belong to the technical scope of the present invention.
例如,在工件加工用片材1中的基材2和黏著劑層3之間、或和基材2中的黏著劑層3的相反側的面,也可設有其他的層。
[實施例]For example, other layers may be provided between the
以下藉由實施例等更具體說明本發明,但本發明範圍不限定於這些實施例等。Hereinafter, the present invention will be described more specifically with examples and the like, but the scope of the present invention is not limited to these examples and the like.
[實施例1] (1) 基材的製作 將低密度聚乙烯的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度80 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Example 1] (1) Fabrication of substrate The resin composition of low-density polyethylene was extruded by a small T-shaped die extruder (manufactured by Toyo Seiki Co., Ltd., product name "LABO PLASTOMILL") to produce a substrate made of a resin film with a thickness of 80 μm. The surface roughness (arithmetic mean roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and it is shown in Table 1.
(2)黏著劑層用塗佈劑的調配 將丙烯酸丁酯72質量份、和2-羥基乙基丙烯酸酯(HEA)28質量份進行共聚合,使所得到的共聚物和甲基丙烯醯氧基乙基異氰酸酯(MOI)以相對於共聚物HEA的80 mol%進行反應,得到側鏈具有活性能量線聚合性基的活性能量線硬化性丙烯酸類聚合物(重量平均分子量50萬)。(2) Preparation of coating agent for adhesive layer 72 parts by mass of butyl acrylate and 28 parts by mass of 2-hydroxyethyl acrylate (HEA) were copolymerized, and the resulting copolymer and methacryl oxyethyl isocyanate (MOI) were compared with the copolymer. 80 mol% of HEA was reacted to obtain an active energy ray-curable acrylic polymer (weight average molecular weight of 500,000) having an active energy ray polymerizable group in the side chain.
相對於上述活性能量線硬化性丙烯酸類聚合物100質量份(固形分濃度;以下相同),調配光聚合起始劑(BASF社製,製品名「Irgacure184」) 3.0質量份及異氰酸酯化合物(Tosoh社製,製品名「Coronate L」) 1.0質量份,且以溶劑稀釋,藉此得到黏著劑層用塗佈劑。To 100 parts by mass of the active energy ray-curable acrylic polymer (solid content concentration; the same below), 3.0 parts by mass of a photopolymerization initiator (manufactured by BASF, product name "Irgacure184") and an isocyanate compound (Tosoh Corporation) Manufactured, product name "Coronate L") 1.0 parts by mass, and diluted with a solvent, thereby obtaining a coating agent for an adhesive layer.
(3)工件加工用片材之製造 準備在厚度38 μm的聚對苯二甲酸乙二酯膜的一面形成矽酮類的剝離劑層之剝離片(Lintech社製,製品名「SP-PET 381031」),在此剝離片的剝離面上以刀塗佈機塗佈上述的黏著劑層用塗佈劑,使其乾燥而形成厚度10 μm的黏著劑層。在此黏著劑層上,和上述所製作的基材的正面對齊而貼合兩者,以得到由基材(80 μm)/黏著劑層(10 μm)/剝離片所構成的積層體。(3) Manufacture of sheets for workpiece processing Prepare a peeling sheet (product name "SP-PET 381031" manufactured by Lintech Corporation) with a silicone-based peeling agent layer on one side of a 38 μm thick polyethylene terephthalate film. Here, the peeling surface of the peeling sheet The coating agent for the adhesive layer described above was applied with a knife coater and dried to form an adhesive layer with a thickness of 10 μm. On this adhesive layer, the front surface of the substrate prepared above was aligned and bonded together to obtain a laminate composed of a substrate (80 μm)/adhesive layer (10 μm)/release sheet.
對上述所得到的積層體,從上述基材側,以切斷基材和黏著劑層的積層體之方式進行半切割,形成直徑370 mm的圓形的工件加工用片材。The laminate obtained above was half-cut from the base material side to cut the laminate of the base material and the adhesive layer to form a circular workpiece processing sheet having a diameter of 370 mm.
[實施例2] 將聚氯乙烯的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度80 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Example 2] The polyvinyl chloride resin composition was extruded by a small T-shaped die extruder (manufactured by Toyo Seiki Co., Ltd., product name "LABO PLASTOMILL") to produce a base material composed of a resin film with a thickness of 80 μm. The surface roughness (arithmetic mean roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and it is shown in Table 1.
除使用上述基材外,其餘和實施例1相同,製造工件加工用片材。The sheet for workpiece processing was produced in the same manner as in Example 1, except that the above-mentioned substrate was used.
[實施例3] 將乙烯-(甲基)丙烯酸共聚物的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度80 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Example 3] The resin composition of the ethylene-(meth)acrylic copolymer is extruded by a small T-shaped die extruder (manufactured by Toyo Seiki Co., Ltd., product name "LABO PLASTOMILL") to produce a base composed of a resin film with a thickness of 80 μm material. The surface roughness (arithmetic mean roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and it is shown in Table 1.
除使用上述基材外,其餘和實施例1相同,製造工件加工用片材。The sheet for workpiece processing was produced in the same manner as in Example 1, except that the above-mentioned substrate was used.
[比較例1] 將乙烯-(甲基)丙烯酸共聚物的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度80 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Comparative Example 1] The resin composition of the ethylene-(meth)acrylic copolymer is extruded by a small T-shaped die extruder (manufactured by Toyo Seiki Co., Ltd., product name "LABO PLASTOMILL") to produce a base composed of a resin film with a thickness of 80 μm material. The surface roughness (arithmetic mean roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and it is shown in Table 1.
除使用上述基材外,其餘和實施例1相同,製造工件加工用片材。The sheet for workpiece processing was produced in the same manner as in Example 1, except that the above-mentioned substrate was used.
[比較例2] 將聚乙烯的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度110 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Comparative Example 2] The resin composition of polyethylene was extruded and molded by a small T-shaped die extruder (manufactured by Toyo Seiki Co., Ltd., product name "LABO PLASTOMILL") to produce a substrate made of a resin film with a thickness of 110 μm. The surface roughness (arithmetic mean roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and it is shown in Table 1.
除使用上述基材外,其餘和實施例1相同,製造工件加工用片材。The sheet for workpiece processing was produced in the same manner as in Example 1, except that the above-mentioned substrate was used.
[比較例3] 將低密度聚乙烯的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度80 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Comparative Example 3] The resin composition of low-density polyethylene was extruded by a small T-shaped die extruder (manufactured by Toyo Seiki Co., Ltd., product name "LABO PLASTOMILL") to produce a substrate made of a resin film with a thickness of 80 μm. The surface roughness (arithmetic mean roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and it is shown in Table 1.
除使用上述基材外,其餘和實施例1相同,製造工件加工用片材。The sheet for workpiece processing was produced in the same manner as in Example 1, except that the above-mentioned substrate was used.
[試驗例1] >基材的表面粗糙度的測定> 針對實施例及比較例所製作的基材的背面之算術平均粗糙度(Ra;單位μm)及最大高度粗糙度(Rz;單位μm),使用接觸式表面粗糙度計(Mitutoyo社製,製品名「SV3000S4」),以下列測定條件,根據JIS B0601:1999測定。結果如表1所示。 [測定條件] 評價長度:10 mm 基準長度:2.5 mm 掃描速度:1.0 mm/sec 截止值(cutoff value):0.25 mm[Test Example 1] >Measurement of surface roughness of substrate> For the arithmetic average roughness (Ra; unit μm) and maximum height roughness (Rz; unit μm) of the back surface of the substrates prepared in Examples and Comparative Examples, a contact surface roughness meter (manufactured by Mitutoyo Corporation, product name) was used "SV3000S4"), measured according to JIS B0601: 1999 under the following measurement conditions. The results are shown in Table 1. [Measurement conditions] Evaluation length: 10 mm Reference length: 2.5 mm Scanning speed: 1.0 mm/sec Cutoff value: 0.25 mm
[試驗例2] >透光率的測定> 對於實施例及比較例所製作的基材,使用紫外-可見-近紅外分光光度計(島津製作所社製,製品名「UV-3600」),以直接受光法測定透光率,摘出波長400 nm、532 nm及800 nm的透光率。結果如表1所示。[Test Example 2] >Measurement of light transmittance> For the substrates prepared in the examples and comparative examples, an ultraviolet-visible-near infrared spectrophotometer (manufactured by Shimadzu Corporation, product name "UV-3600") was used, and the light transmittance was measured by the direct light receiving method, and the wavelength was 400 nm. , 532 nm and 800 nm transmittance. The results are shown in Table 1.
[試驗例3] >雷射刻印性的評價> 使用膠帶貼膜(tape mounter)裝置(Lintech社製,製品名「RAD-2700F/12」),從實施例及比較例的工件加工用片材將剝離片剝離,使露出的黏著劑層貼附於經#2000研磨後的矽晶圓(直徑:12吋,厚度:350 μm)的研磨面。與此同時,將露出的黏著劑層貼附於導線框架。[Test Example 3] >Evaluation of laser marking property> Using a tape mounter device (manufactured by Lintech, product name "RAD-2700F/12"), the release sheet was peeled off from the workpiece processing sheets of Examples and Comparative Examples, and the exposed adhesive layer was attached to Polished surface of silicon wafer (diameter: 12 inches, thickness: 350 μm) after #2000 grinding. At the same time, the exposed adhesive layer is attached to the lead frame.
使用雷射刻印機(EO TECHNICS社製,製品名「CSM300M」),隔著工件加工用片材對矽晶圓照射波長532 nm的雷射光,在矽晶圓進行利用雷射刻印的印字(文字大小:0.2 mm×0.3 mm,文字間隔:0.3 mm,文字數:20個字)。Using a laser marking machine (manufactured by EO TECHNICS, product name "CSM300M"), a silicon wafer is irradiated with laser light with a wavelength of 532 nm through a workpiece processing sheet, and laser marking (text) is performed on the silicon wafer Size: 0.2 mm×0.3 mm, text interval: 0.3 mm, number of characters: 20 words).
之後,從矽晶圓剝離工件加工用片材,使用數位顯微鏡(KEYENCE社製,製品名「DigitalMicroscope VHX-1000,倍率:100倍」)確認形成於矽晶圓的印字。其結果,印字不粗亂、精密度高而被形成者評價為◎,印字有一點粗亂、但精密度某種程度的高而被形成者評價為○,印字粗亂、精密度低而被形成者評價為╳。結果如表1所示。After that, the workpiece processing sheet was peeled from the silicon wafer, and the printing formed on the silicon wafer was confirmed using a digital microscope (manufactured by KEYENCE, product name "DigitalMicroscope VHX-1000, magnification: 100 times"). As a result, the printing was not rough and the precision was high, and was evaluated as ◎, the printing was a little rough, but the precision was somewhat high, and the former was rated as ○, and the printing was rough and low in precision. Former evaluation is ╳. The results are shown in Table 1.
[試驗例4] >雷射光耐受性的評價> 和試驗例3相同,隔著工件加工用片材對矽晶圓照射波長532 nm的雷射光,而在矽晶圓進行印字。之後,從矽晶圓剝離工件加工用片材,以目視確認在工件加工用片材的基材是否有起因於雷射光的燒焦(印字)。其結果,基材沒有燒焦(印字)者評價為○,基材有燒焦(印字)者評價為╳。結果如表1所示。[Test Example 4] >Evaluation of laser light tolerance> In the same way as in Test Example 3, the silicon wafer was irradiated with laser light with a wavelength of 532 nm through the workpiece processing sheet, and printing was performed on the silicon wafer. After that, the sheet for workpiece processing is peeled from the silicon wafer, and it is visually confirmed whether the substrate of the sheet for workpiece processing is burnt (printed) due to laser light. As a result, those with no scorching (printing) on the substrate were evaluated as ○, and those with scorching (printing) on the substrate were evaluated as ╳. The results are shown in Table 1.
[表1]
從表1可知,實施例所得到的工件加工用片材為雷射刻印性優良、且對雷射光具有耐受性者。 [產業可利用性]As can be seen from Table 1, the sheet for workpiece processing obtained in Examples is excellent in laser marking property and resistant to laser light. [Industry availability]
本發明之工件加工用片材,適合用於包含對半導體晶圓、玻璃板等的工件,而隔著該工件加工用片材進行雷射刻印的步驟之用途。The sheet for workpiece processing of the present invention is suitable for applications that include a workpiece for semiconductor wafers, glass plates, etc., and the step of performing laser marking through the sheet for workpiece processing.
1‧‧‧工件加工用片材
2‧‧‧基材
3‧‧‧黏著劑層
6‧‧‧剝離片
7‧‧‧半導體晶圓
8‧‧‧導線框架1‧‧‧Working
第1圖為本發明之一實施態樣之工件加工用片材的剖面圖。 第2圖為本發明之一實施態樣之工件加工用片材的使用例,具體顯示積層結構體的剖面圖。Fig. 1 is a cross-sectional view of a sheet for workpiece processing according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a use example of a workpiece processing sheet according to an embodiment of the present invention, specifically showing a laminated structure.
1‧‧‧工件加工用片材 1‧‧‧Working sheet
2‧‧‧基材 2‧‧‧ Base material
3‧‧‧黏著劑層 3‧‧‧Adhesive layer
6‧‧‧剝離片 6‧‧‧ peeling sheet
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2019
- 2019-04-05 KR KR1020207025469A patent/KR20200144090A/en not_active Application Discontinuation
- 2019-04-05 WO PCT/JP2019/015091 patent/WO2019203021A1/en active Application Filing
- 2019-04-05 CN CN201980026145.XA patent/CN111989764A/en active Pending
- 2019-04-05 JP JP2020514077A patent/JP7325403B2/en active Active
- 2019-04-11 TW TW108112637A patent/TWI797309B/en active
Also Published As
Publication number | Publication date |
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WO2019203021A1 (en) | 2019-10-24 |
JP7325403B2 (en) | 2023-08-14 |
KR20200144090A (en) | 2020-12-28 |
CN111989764A (en) | 2020-11-24 |
JPWO2019203021A1 (en) | 2021-06-10 |
TWI797309B (en) | 2023-04-01 |
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