TWI797309B - Laser marking method and sheet for workpiece processing - Google Patents

Laser marking method and sheet for workpiece processing Download PDF

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TWI797309B
TWI797309B TW108112637A TW108112637A TWI797309B TW I797309 B TWI797309 B TW I797309B TW 108112637 A TW108112637 A TW 108112637A TW 108112637 A TW108112637 A TW 108112637A TW I797309 B TWI797309 B TW I797309B
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sheet
workpiece processing
base material
adhesive layer
substrate
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TW202004876A (en
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森田由希
山下茂之
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日商琳得科股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)

Abstract

一種工件加工用片材1,其為至少具有基材2、與積層於基材2的第1面側的黏著劑層3之工件加工用片材1,其中,在基材2的第2面的算術平均粗糙度(Ra)為0.01μm以上、0.4μm以下,在基材2的第2面的最大高度粗糙度(Rz)為0.01μm以上、2.5μm以下,基材2的波長532nm的透光率為40%以上。如此的工件加工用片材1不僅雷射刻印性優良,對雷射光也具有耐受性。 A workpiece processing sheet 1, which is a workpiece processing sheet 1 having at least a substrate 2 and an adhesive layer 3 laminated on the first surface side of the substrate 2, wherein the second surface of the substrate 2 The arithmetic average roughness (Ra) of the substrate 2 is not less than 0.01 μm and not more than 0.4 μm, and the maximum height roughness (Rz) on the second surface of the substrate 2 is not less than 0.01 μm and not more than 2.5 μm. The light rate is above 40%. Such a workpiece processing sheet 1 is not only excellent in laser marking properties, but also resistant to laser light.

Description

雷射刻印方法及工件加工用片材 Laser marking method and sheet for workpiece processing

本發明關於工件加工用片材,特別是關於適合工件進行雷射刻印之情形的工件加工用片材。 The present invention relates to a sheet for workpiece processing, and particularly relates to a sheet for workpiece processing suitable for laser marking of a workpiece.

近年,經由稱為面朝下(face down)方式的封裝法以製造半導體裝置被進行。此方法中,在封裝具有形成凸塊(bump)等的電極的電路面之半導體晶片時,半導體晶片的電路面側和導線框架(lead frame)等的晶片搭載部接合。因此,成為不形成電路的半導體晶片的內面側露出的結構。 In recent years, semiconductor devices have been manufactured through a packaging method called a face-down method. In this method, when packaging a semiconductor wafer having a circuit surface on which electrodes such as bumps are formed, the circuit surface side of the semiconductor wafer is bonded to a chip mounting portion such as a lead frame. Therefore, the inner surface side of the semiconductor wafer where no circuit is formed is exposed.

因此,多有在半導體晶片的內面側形成用於保護半導體晶片的由硬質有機材料所構成的保護膜者。於是,例如,在專利文獻1,已揭示一種將可形成上述保護膜的保護膜形成層形成於切割片上而成之保護膜形成及切割用片材。根據此保護膜形成及切割用片材,可在半導體晶圓上形成保護膜後,繼續進行切割(dicing),而得到帶有保護膜的半導體晶片。 Therefore, there are many cases in which a protective film made of a hard organic material for protecting the semiconductor wafer is formed on the inner surface side of the semiconductor wafer. Then, for example, Patent Document 1 discloses a sheet for protective film formation and dicing in which a protective film forming layer capable of forming the above protective film is formed on a dicing sheet. According to this protective film forming and dicing sheet, after forming a protective film on a semiconductor wafer, dicing can be continued to obtain a semiconductor wafer with a protective film.

又,上述切割片本身具有基材及設置於其一面的黏著劑層。黏著劑層的黏著劑,為了使帶有保護膜的半導體晶片在撿拾(pick up)時的剝離性提高,有可能使用經紫外線照射使黏著力下降的紫外線硬化性的黏著劑。 Moreover, the said dicing sheet itself has a base material and the adhesive layer provided in one surface. As the adhesive of the adhesive layer, in order to improve the releasability of the semiconductor wafer with a protective film when picking up (pick up), it is possible to use an ultraviolet curable adhesive that reduces the adhesive force by ultraviolet irradiation.

上述保護膜通常為了顯示該半導體晶片的產品編號等,會進行印字。此印字方法一般是對保護膜照射雷射的雷射刻印(laser marking)法。在對保護膜施行雷射刻印的情形,是隔著保護膜形成及切割用片材的切割片,對保護膜照射雷射光而成。Usually, the said protective film is printed in order to display the product number etc. of this semiconductor wafer. This printing method is generally a laser marking method in which a protective film is irradiated with laser light. When laser marking is performed on a protective film, laser light is irradiated to a protective film through the dicing sheet of the sheet|seat for protective film formation and dicing.

上述保護膜一般是由黑色的樹脂組合物所構成者,在對如此的保護膜施行雷射刻印的情形,一般來說,即使雷射輸出較弱,也能良好地印字在保護膜。 [先前技術文獻] [專利文獻]The above-mentioned protective film is generally made of a black resin composition. When laser marking is performed on such a protective film, generally speaking, even if the laser output is weak, the protective film can be well printed. [Prior Art Literature] [Patent Document]

[專利文獻1]日本特開2006-140348號公報[Patent Document 1] Japanese Unexamined Patent Publication No. 2006-140348

[發明所欲解決之問題][Problem to be solved by the invention]

近年有提案對作為工件的半導體晶圓、玻璃板等施行雷射刻印。在對如此無機材料施行雷射刻印的情形,容易發生不能良好地進行印字、所形成的印字變粗亂、印字的精密度變低的問題。In recent years, there have been proposals to perform laser marking on semiconductor wafers, glass plates, etc., which are workpieces. In the case of performing laser marking on such an inorganic material, there are likely to be problems in that printing cannot be performed satisfactorily, the formed printed characters become rough, and the precision of printed characters decreases.

又,在如上述對無機材料施行雷射刻印的情形,雷射的輸出有必要變得較大,因此,切割片的基材容易燒焦。這樣一來,該燒焦的部分的透光率下降,使得無法良好地視認形成在工件的印字。又當切割片的黏著劑層是紫外線硬化性的情形,在使該黏著劑層紫外線硬化時,在基材的燒焦部分的紫外線透過性變差,結果,該部分的黏著劑層不能充分硬化,產生黏著劑附著在撿拾後的晶片的殘餘糊渣的問題。In addition, when laser marking is performed on an inorganic material as described above, the output of the laser needs to be large, so the base material of the dicing sheet is easily burnt. Then, the light transmittance of the scorched portion decreases, so that the printed characters formed on the workpiece cannot be seen well. In addition, when the adhesive layer of the dicing sheet is ultraviolet curable, when the adhesive layer is cured by ultraviolet light, the ultraviolet transmittance of the burnt part of the base material becomes poor, and as a result, the adhesive layer of this part cannot be fully cured. , resulting in the problem that the adhesive adheres to the residual paste residue of the picked-up wafer.

本發明是鑑於上述之實際情況所形成,以提供雷射刻印性優良且對雷射光有耐受性的工件加工用片材為目的。 [解決問題之技術手段]The present invention is made in view of the above-mentioned actual situation, and an object of the present invention is to provide a sheet for workpiece processing that is excellent in laser marking properties and resistant to laser light. [Technical means to solve the problem]

為了達成上述目的,第一,本發明提供一種工件加工用片材,其為至少具有基材、與積層於該基材的第1面側的黏著劑層之工件加工用片材,其特徵在於,在該基材的第2面的算術平均粗糙度(Ra)為0.01 μm以上、0.4 μm以下,在該基材的第2面的最大高度粗糙度(Rz)為0.01 μm以上、2.5 μm以下,該基材的波長532 nm的透光率為40%以上(發明1)。In order to achieve the above object, first, the present invention provides a sheet for workpiece processing, which is a sheet for workpiece processing having at least a base material and an adhesive layer laminated on the first surface side of the base material, characterized in that , the arithmetic average roughness (Ra) on the second surface of the substrate is 0.01 μm or more and 0.4 μm or less, and the maximum height roughness (Rz) on the second surface of the substrate is 0.01 μm or more and 2.5 μm or less , The light transmittance of the substrate at a wavelength of 532 nm is 40% or more (Invention 1).

上述發明(發明1)中,由於基材的物性如上所述,因此雷射刻印所使用的雷射光,特別是波長532 nm的雷射光,容易透過基材、甚至工件加工用片材。因此,可對工件良好地進行以雷射刻印的印字,可形成精密度高的印字。又,在基材中,雷射光的能量難以被吸收,可抑制基材燒焦而被印字。因此,沒有起因於基材燒焦所造成的透光率下降,通過工件加工用片可以良好地視認形成於工件的印字。In the above invention (Invention 1), since the physical properties of the base material are as described above, the laser light used for laser marking, especially the laser light with a wavelength of 532 nm, easily passes through the base material and even the workpiece processing sheet. Therefore, it is possible to satisfactorily perform laser marking on the workpiece, and to form highly precise printed characters. In addition, the energy of the laser light is hardly absorbed in the base material, and it is possible to prevent the base material from being scorched and printed. Therefore, there is no reduction in light transmittance due to burning of the base material, and the printed characters formed on the workpiece can be seen favorably through the workpiece processing sheet.

上述發明(發明1)中,上述基材的波長400 nm的透光率以40%以上為佳(發明2)。In the above invention (Invention 1), it is preferable that the light transmittance of the above-mentioned base material at a wavelength of 400 nm is 40% or more (Invention 2).

上述發明(發明1、2)中,上述基材的波長800 nm的透光率以45%以上為佳(發明3)。In the above inventions (Inventions 1 and 2), it is preferable that the light transmittance of the substrate at a wavelength of 800 nm is 45% or more (Invention 3).

上述發明(發明1~3)中的工件加工用片材,較佳為其用於包含隔著該工件加工用片材對工件進行雷射刻印的步驟之用途(發明4)。The workpiece processing sheet in the above inventions (Inventions 1 to 3) is preferably used in a use including a step of laser marking a workpiece through the workpiece processing sheet (Invention 4).

上述發明(發明1~4)中的工件加工用片材,較佳為其用於切割(發明5)。The sheet for workpiece processing in the above inventions (Inventions 1 to 4) is preferably used for cutting (Invention 5).

上述發明(發明5)中的工件加工用片材,較佳為其用於隱形切割(stealth dicing) (發明6)。 [發明之效果]The sheet for workpiece processing in the above invention (Invention 5) is preferably used for stealth dicing (Invention 6). [Effect of Invention]

本發明之工件加工用片材,不僅雷射刻印性優良,對雷射光也具有耐受性。The workpiece processing sheet of the present invention not only has excellent laser marking properties, but also has resistance to laser light.

以下對於本發明之實施態樣進行說明。 第1圖為本發明之一實施態樣之工件加工用片材的剖面圖。如第1圖所示,本實施態樣之工件加工用片材1具有基材2、積層在基材2的第1面側(第1圖中、上方側)的黏著劑層3、以及積層在黏著劑層3上的剝離片6而構成。剝離片6是在工件加工用片材1的使用時剝離去除、直到那時為止都保護黏著劑層3者,其在本實施態樣的工件加工用片材1中也可以省略。在此,在基材2中的黏著劑層3側的面稱為「第1面」,其相反側的面(第1圖中,下方的面)稱為「第2面」。Embodiments of the present invention will be described below. Fig. 1 is a cross-sectional view of a sheet for workpiece processing according to an embodiment of the present invention. As shown in FIG. 1, the workpiece processing sheet 1 of this embodiment has a base material 2, an adhesive layer 3 laminated on the first surface side of the base material 2 (upper side in FIG. 1 ), and a laminated layer. The release sheet 6 on the adhesive layer 3 is formed. The peeling sheet 6 is to be peeled and removed when the workpiece processing sheet 1 is used to protect the adhesive layer 3 until then, and it can also be omitted in the workpiece processing sheet 1 of this embodiment. Here, the surface on the side of the adhesive layer 3 in the base material 2 is referred to as a "first surface", and the surface on the opposite side (the lower surface in FIG. 1 ) is referred to as a "second surface".

本實施態樣之工件加工用片材1,作為一例可列舉,在對於作為工件的半導體晶圓、玻璃板等進行的雷射刻印步驟及切割步驟中為了維持工件所使用者,但不限定於此。The workpiece processing sheet 1 of the present embodiment is used as an example to maintain the workpiece in the laser marking step and cutting step of the semiconductor wafer, glass plate, etc. as the workpiece, but is not limited to this.

又,在本實施態樣之雷射刻印,除了半導體晶圓、玻璃板等的無機材料所構成的構件之外,積層於此等的保護膜、接著劑層等、或者由封裝的表層等的有機材料所構成的構件,也可以成為對象。In addition, in the laser marking of the present embodiment, in addition to members made of inorganic materials such as semiconductor wafers and glass plates, the protective film, adhesive layer, etc., or the surface layer of the package, etc., are laminated. Components made of organic materials can also be objects.

本實施態樣之工件加工用片材1,通常是形成長條狀而捲成輥狀,以捲對捲(roll-to-roll)方式使用。The workpiece processing sheet 1 of this embodiment is usually formed into a long strip and rolled into a roll, and used in a roll-to-roll manner.

1.工件加工用片材的構成構件 (1) 基材 (1-1) 物性 在基材2的第2面(以下有稱為「基材2的背面」的情形)中的算術平均粗糙度(Ra)為0.01 μm以上、0.4 μm以下,最大高度粗糙度(Rz)為0.01 μm以上、2.5 μm以下。又,基材2的波長532 nm的透光率為40%以上。在本說明書中的算術平均粗糙度(Ra)及最大高度粗糙度(Rz)是根據JIS B0601:1999所測定者。又,在本說明書中的透光率是使用分光光度計作為測定器具,以直接受光法測定者。任一測定方法的詳細作法如後述的試驗例所示。1. Constituent members of sheets for workpiece processing (1) Substrate (1-1) Physical properties The arithmetic mean roughness (Ra) of the second surface of the base material 2 (hereafter referred to as "the back surface of the base material 2") is 0.01 μm or more and 0.4 μm or less, and the maximum height roughness (Rz) is 0.01 More than μm and less than 2.5 μm. In addition, the light transmittance of the substrate 2 at a wavelength of 532 nm is 40% or more. The arithmetic mean roughness (Ra) and the maximum height roughness (Rz) in this specification are those measured based on JISB0601:1999. In addition, the light transmittance in this specification is measured by the direct light receiving method using a spectrophotometer as a measuring instrument. The details of any of the measurement methods are shown in the test examples described later.

基材2的第2面的算術平均粗糙度(Ra)及最大高度粗糙度(Rz)在上述範圍,且基材2的波長532 nm的透光率在上述範圍,藉此,雷射刻印所使用的雷射光,特別是波長532 nm的雷射光,容易透過基材2、甚至工件加工用片材1。因此,對工件可良好地進行歷用雷射刻印的印字,可形成精密度高的印字。又,基材2中雷射光的能量難以被吸收,可抑制基材2燒焦而被印字。因此,沒有起因於基材2燒焦所造成的透光性的下降,可以通過工件加工用片材1良好地視認形成在工件的印字。再者,在黏著劑層3是由紫外線硬化性黏著劑所構成的情形,在通過基材2而對黏著劑層3照射紫外線時,該紫外線沒有問題地到達黏著劑層3,黏著劑層3良好硬化。因此,難以發生黏著劑附著在撿拾後的晶片的殘餘糊渣的問題。亦即,本實施態樣之工件加工用片材1的雷射刻印性優良且對雷射光具有耐受性。The arithmetic mean roughness (Ra) and the maximum height roughness (Rz) of the second surface of the substrate 2 are within the above-mentioned range, and the light transmittance of the substrate 2 at a wavelength of 532 nm is within the above-mentioned range. The laser light used, especially the laser light with a wavelength of 532 nm, easily passes through the substrate 2 and even the sheet 1 for workpiece processing. Therefore, it is possible to satisfactorily perform laser-marked printing on the workpiece, and to form highly precise printed characters. In addition, the energy of the laser light in the base material 2 is hardly absorbed, and it is possible to suppress the base material 2 from being scorched and printed. Therefore, there is no decrease in translucency due to burning of the base material 2 , and the printed characters formed on the workpiece can be visually recognized through the workpiece processing sheet 1 well. Furthermore, when the adhesive layer 3 is composed of an ultraviolet curable adhesive, when ultraviolet rays are irradiated to the adhesive layer 3 through the substrate 2, the ultraviolet rays reach the adhesive layer 3 without any problem, and the adhesive layer 3 Well hardened. Therefore, the problem that the adhesive adheres to the residual paste of the picked-up wafer hardly occurs. That is, the workpiece processing sheet 1 of this embodiment is excellent in laser marking property and has tolerance to laser light.

再者,藉由基材2滿足上述物性,在隱形切割使用的雷射光的透過性也變得良好,成為隱形切割的加工性優良者。In addition, when the base material 2 satisfies the above-mentioned physical properties, the transmittance of laser light used in stealth dicing becomes good, and the processability of stealth dicing becomes excellent.

又,藉由基材2的第2面的算術平均粗糙度(Ra)及最大高度粗糙度(Rz)在上述範圍,也可抑制工件加工用片材1的黏連黏連(blocking)。亦即,可良好地進行從工件加工用片材1的捲取體的放出,且放出之時難以發生非意欲的在界面的剝離。In addition, when the arithmetic average roughness (Ra) and the maximum height roughness (Rz) of the second surface of the base material 2 are in the above-mentioned ranges, blocking of the workpiece processing sheet 1 can also be suppressed. That is, the sheet 1 for workpiece processing can be unwound well, and unintended peeling at the interface is less likely to occur during unwinding.

在基材2的背面的算術平均粗糙度(Ra)的上限值,如上述,為0.4 μm以下,較佳為0.2 μm以下,特佳為未滿0.1 μm。算術平均粗糙度(Ra)超過0.4 μm時,基材2的背面的凹凸會妨礙雷射光的透過。另一方面,算術平均粗糙度(Ra)的下限值,從防止黏連的觀點,為0.01 μm以上,較佳為0.015 μm以上。The upper limit of the arithmetic mean roughness (Ra) on the back surface of the base material 2 is, as described above, 0.4 μm or less, preferably 0.2 μm or less, particularly preferably less than 0.1 μm. When the arithmetic mean roughness (Ra) exceeds 0.4 μm, the irregularities on the back surface of the substrate 2 prevent the transmission of laser light. On the other hand, the lower limit of the arithmetic mean roughness (Ra) is at least 0.01 μm, preferably at least 0.015 μm, from the viewpoint of preventing blocking.

又,在基材2的背面的最大高度粗糙度(Rz),如上述,為2.5 μm以下,較佳為1.5 μm以下,特佳為0.5 μm以下。最大高度粗糙度(Rz)超過2.5 μm時,基材2的背面的凹凸會妨礙雷射光的透過。另一方面,最大高度粗糙度(Rz)的下限值,從防止黏連的觀點,為0.01 μm以上,較佳為0.013 μm以上,特佳為0.1 μm以上。Also, the maximum height roughness (Rz) on the back surface of the substrate 2 is, as described above, 2.5 μm or less, preferably 1.5 μm or less, particularly preferably 0.5 μm or less. When the maximum height roughness (Rz) exceeds 2.5 μm, the irregularities on the back surface of the substrate 2 hinder the transmission of laser light. On the other hand, the lower limit of the maximum height roughness (Rz) is at least 0.01 μm, preferably at least 0.013 μm, particularly preferably at least 0.1 μm, from the viewpoint of preventing blocking.

在基材2的第1面(以下有稱為「基材2的正面」的情形)積層黏著劑層3,基材2的正面的凹凸因黏著劑層3被填埋,所以基材2的正面的算術平均粗糙度(Ra)及最大高度粗糙度(Rz)沒有特別限定。然而,一旦該等的值過大,也有可能發生基材2的正面的凹凸不被黏著劑層3所填埋的情形,基材2的正面的算術平均粗糙度(Ra)的上限值,以2.5 μm以下為佳。基材2的正面的算術平均粗糙度(Ra)的下限值沒有特別限定,但在薄膜的製膜方法上,通常為0.01 μm以上。又,根據上述理由,基材2的正面的最大高度粗糙度(Rz)的上限值,以2.5 μm以下為佳。基材2的正面的最大高度粗糙度(Rz)的下限值沒有特別限定,但在薄膜的製膜方法上,通常為0.01 μm以上。The adhesive layer 3 is laminated on the first surface of the base material 2 (hereinafter referred to as "the front surface of the base material 2"). The arithmetic mean roughness (Ra) and the maximum height roughness (Rz) of the front surface are not particularly limited. However, once these values are too large, the unevenness on the front side of the base material 2 may not be filled by the adhesive layer 3. The upper limit of the arithmetic mean roughness (Ra) of the front side of the base material 2 is set to It is better to be below 2.5 μm. The lower limit of the arithmetic average roughness (Ra) of the front surface of the base material 2 is not particularly limited, but is usually 0.01 μm or more in terms of a thin film forming method. Also, for the above reasons, the upper limit of the maximum height roughness (Rz) of the front surface of the substrate 2 is preferably 2.5 μm or less. The lower limit of the maximum height roughness (Rz) of the front surface of the base material 2 is not particularly limited, but is generally 0.01 μm or more in terms of a method of forming a thin film.

基材2的波長532 nm的透光率,如上述,為40%以上,較佳為50%以上,特佳為60%以上,進一步更佳為75%以上。波長532 nm的透光率未滿40%時,在雷射刻印主要使用的雷射光(特別是波長532 nm的雷射光)的能量在基材2被吸收,在基材2容易發生燒焦。又,波長532 nm的透光率的上限值沒有特別限定,也可以是100%。The light transmittance of the substrate 2 at a wavelength of 532 nm, as described above, is 40% or more, preferably 50% or more, particularly preferably 60% or more, and more preferably 75% or more. When the light transmittance at a wavelength of 532 nm is less than 40%, the energy of the laser light mainly used in laser marking (especially laser light with a wavelength of 532 nm) is absorbed by the substrate 2, and burning of the substrate 2 tends to occur. Also, the upper limit of the light transmittance at a wavelength of 532 nm is not particularly limited, and may be 100%.

又,基材2的波長400 nm的透光率,以40%以上者為佳,以45%以上為更佳,特別是以50%以上為佳,進一步以75%以上為更佳。藉由波長400 nm的透光率為40%以上,成為可見光容易透過者,因此,通過基材2、甚至工件加工用片材1,可更良好地視認形成於工件的印字。In addition, the light transmittance of the substrate 2 at a wavelength of 400 nm is preferably at least 40%, more preferably at least 45%, particularly preferably at least 50%, and more preferably at least 75%. Since the light transmittance at a wavelength of 400 nm is 40% or more, it is easy to transmit visible light. Therefore, through the substrate 2 and even the sheet 1 for workpiece processing, the printed characters formed on the workpiece can be more clearly recognized.

再者,基材2的波長800 nm的透光率,以45%以上者為佳,以55%以上為更佳,特別是以65%以上為佳,進一步以75%以上為更佳。藉由波長800 nm的透光率為45%以上,成為可見光容易透過者,因此,通過基材2、甚至工件加工用片材1,可更良好地視認形成於工件的印字。Furthermore, the light transmittance of the substrate 2 at a wavelength of 800 nm is preferably at least 45%, more preferably at least 55%, especially preferably at least 65%, and more preferably at least 75%. Since the light transmittance at a wavelength of 800 nm is 45% or more, it is easy to transmit visible light. Therefore, through the substrate 2 and even the sheet 1 for workpiece processing, the printed characters formed on the workpiece can be more clearly recognized.

(1-2)厚度 基材2的厚度,只要是在使用工件加工用片材1的各步驟中能適當地發揮作用,就沒有特別限定。具體而言,基材2的厚度,以20 μm以上為佳,特別是以25 μm以上為佳,進一步以50 μm以上為更佳。又,基材2的厚度,以450 μm以下為佳,特別是以400 μm以下特佳,進一步以350 μm以下為更佳。藉由基材2的厚度在上述範圍,可良好地維持工件的加工性及雷射光的透過性。(1-2) Thickness The thickness of the base material 2 is not particularly limited as long as it functions appropriately in each step of using the workpiece processing sheet 1 . Specifically, the thickness of the substrate 2 is preferably at least 20 μm, especially preferably at least 25 μm, and more preferably at least 50 μm. Also, the thickness of the substrate 2 is preferably not more than 450 μm, particularly preferably not more than 400 μm, and more preferably not more than 350 μm. When the thickness of the base material 2 is in the above-mentioned range, the processability of the workpiece and the transmittance of laser light can be maintained well.

(1-3)材料 基材2,以由樹脂薄膜所構成為佳。作為構成基材2的樹脂薄膜的具體例,可列舉,例如,低密度聚乙烯(LDPE)膜、線型低密度聚乙烯(LLDPE)膜、高密度聚乙烯(HDPE)膜等的聚乙烯膜、聚丙烯膜、乙烯-丙烯共聚物膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、乙烯-降莰烯共聚物膜、降莰烯樹脂膜等的聚烯烴類膜;乙烯-乙酸乙烯酯共聚物膜、乙烯-(甲基)丙烯酸共聚物膜、乙烯-(甲基)丙烯酸酯共聚物膜等的乙烯類共聚膜;聚氯乙烯膜、氯乙烯共聚物膜等的聚氯乙烯類膜;聚對苯二甲酸乙二酯膜、聚對苯二甲酸丁二酯膜等的聚酯類膜;聚胺基甲酸乙酯(Polyurethane)膜;聚醯亞胺膜;聚苯乙烯膜;聚碳酸酯膜;氟樹脂膜等。又,也可使用此等的交聯膜、離子聚合物膜之類的修飾膜。再者,也可以是將上述膜之同種類或異種類複數積層而成的積層薄膜。又,本說明書中「(甲基)丙烯酸」表示丙烯酸及甲基丙烯酸兩者。對於其他類似用語也是相同。(1-3) Materials The substrate 2 is preferably made of a resin film. Specific examples of the resin film constituting the substrate 2 include, for example, polyethylene films such as low-density polyethylene (LDPE) films, linear low-density polyethylene (LLDPE) films, and high-density polyethylene (HDPE) films, Polyolefin films such as polypropylene film, ethylene-propylene copolymer film, polybutene film, polybutadiene film, polymethylpentene film, ethylene-norbornene copolymer film, and norcamphene resin film; Ethylene-based copolymer films such as ethylene-vinyl acetate copolymer films, ethylene-(meth)acrylic acid copolymer films, and ethylene-(meth)acrylate copolymer films; polyvinyl chloride films, vinyl chloride copolymer films, etc. Polyvinyl chloride films; polyester films such as polyethylene terephthalate films and polybutylene terephthalate films; polyurethane films; polyimide films; Styrene film; polycarbonate film; fluororesin film, etc. In addition, modified membranes such as these crosslinked membranes and ionomer membranes can also be used. Furthermore, it may be a laminated film obtained by laminating multiple layers of the above-mentioned films of the same type or different types. In addition, "(meth)acrylic acid" in this specification shows both acrylic acid and methacrylic acid. The same applies to other similar terms.

上述之中,以聚烯烴類膜、聚氯乙烯類膜及乙烯類共聚膜為佳。聚烯烴類膜之中,以聚乙烯膜為佳,特別是以低密度聚乙烯(LDPE)膜為佳。又,聚氯乙烯類膜之中,以聚氯乙烯膜為特佳,乙烯類共聚膜之中,以乙烯-(甲基)丙烯酸共聚物膜為特佳。根據此等樹脂膜,容易滿足前述物性。又,此等樹脂膜,從延展性、工件貼附性、晶片剝離性等的觀點,也是較佳。Among the above, polyolefin-based films, polyvinyl chloride-based films, and ethylene-based copolymer films are preferred. Among polyolefin films, polyethylene films are preferred, and low-density polyethylene (LDPE) films are particularly preferred. Furthermore, among polyvinyl chloride-based films, polyvinyl chloride films are particularly preferred, and among ethylene-based copolymer films, ethylene-(meth)acrylic acid copolymer films are particularly preferred. According to such a resin film, it is easy to satisfy the said physical property. In addition, these resin films are also preferable from the viewpoints of ductility, workpiece attachability, wafer peelability, and the like.

上述樹脂膜,以提升和積層於其表面的黏著劑層3的密著性為目的,可視需要在一表面或兩表面施行利用氧化法、凹凸化法等的表面處理、或者底漆處理。作為上述氧化法,可列舉,例如,電暈放電處理、電漿放電處理、鉻氧化處理(濕式)、火焰處理、熱風處理、臭氧、紫外線照射處理等,又,作為凹凸化法,可列舉,例如,噴砂法、熔射處理法等。The above-mentioned resin film may be subjected to surface treatment such as oxidation or embossing or primer treatment on one or both surfaces for the purpose of improving the adhesiveness of the adhesive layer 3 laminated on the surface. Examples of the above-mentioned oxidation method include corona discharge treatment, plasma discharge treatment, chromium oxidation treatment (wet method), flame treatment, hot air treatment, ozone, and ultraviolet irradiation treatment. , for example, sandblasting, spray processing, etc.

又,基材2也可在上述樹脂之中含有著色劑、難燃劑、可塑劑、抗靜電劑、滑劑、填充材等的各種添加劑。In addition, the base material 2 may contain various additives such as a colorant, a flame retardant, a plasticizer, an antistatic agent, a lubricant, and a filler among the above-mentioned resins.

(1-4)製造方法 構成基材2的樹脂膜,可利用根據樹脂膜的種類而決定之製造方法而製造,但主要是藉由押出成形的T字模(T-die)法所製造。為了製造具有上述的算術平均粗糙度(Ra)、最大高度粗糙度(Rz)及透光率的樹脂膜,在樹脂膜的製膜時有必要不捲入空氣(氣泡)。例如,可藉由在減壓下、真空下等押出成形,抑制上述的空氣捲入,而製造沒有氣泡痕跡的樹脂膜。又,調整在製膜時的冷卻輥等的各步驟的輥的表面粗糙度,也可以製造沒有氣泡痕跡的樹脂膜。但是,具有上述的算術平均粗糙度(Ra)、最大高度粗糙度(Rz)及透光率的樹脂膜的製造方法不限於此等。(1-4) Manufacturing method The resin film constituting the base material 2 can be produced by a production method determined according to the type of the resin film, but it is mainly produced by the T-die method of extrusion molding. In order to manufacture a resin film having the above-mentioned arithmetic mean roughness (Ra), maximum height roughness (Rz) and light transmittance, it is necessary not to entrain air (bubbles) during film formation of the resin film. For example, by extrusion molding under reduced pressure, under vacuum, etc., the above-mentioned air entrainment can be suppressed, and a resin film without traces of air bubbles can be produced. In addition, by adjusting the surface roughness of rolls in each step such as a cooling roll during film formation, a resin film free from bubble marks can also be produced. However, the manufacturing method of the resin film which has said arithmetic mean roughness (Ra), maximum height roughness (Rz), and light transmittance is not limited to these.

(2)黏著劑層 本實施態樣之工件加工用片材1所具備之黏著劑層3,可以是由活性能量線非硬化性黏著劑所構成,也可以是由活性能量線硬化性黏著劑所構成。作為活性能量線非硬化性黏著劑,以具有所期望的黏著力及再剝離性者為佳,也可使用,例如,丙烯酸類黏著劑、橡膠類黏著劑、矽酮類黏著劑、胺基甲酸乙酯類黏著劑、聚酯類黏著劑、聚乙烯醚類黏著劑等。這些之中,以在切割步驟等中可有效地抑制工件或加工物的脫落之丙烯酸類黏著劑為佳。(2) Adhesive layer The adhesive layer 3 included in the workpiece processing sheet 1 of this embodiment may be composed of an active energy ray non-curable adhesive or an active energy ray curable adhesive. As active energy ray non-hardening adhesives, those with desired adhesive force and re-peelability are preferable, and acrylic adhesives, rubber adhesives, silicone adhesives, urethane adhesives, etc. can also be used. Ethyl ester adhesives, polyester adhesives, polyvinyl ether adhesives, etc. Among these, an acrylic adhesive that can effectively suppress peeling of workpieces or processed objects in cutting steps and the like is preferable.

另一方面,活性能量線硬化性黏著劑,由於經活性能量線照射而黏著力下降,因此,在想要使工件或加工物和工件加工用片材1分離時,經由活性能量線照射,可容易分離。本實施態樣中,上述活性能量線硬化性黏著劑以紫外線硬化性黏著劑為佳。藉此,能夠使前述殘餘糊渣的抑制效果顯著化而被發揮。On the other hand, since active energy ray-curable adhesives are irradiated with active energy rays, their adhesive force decreases. Therefore, when it is desired to separate the workpiece or processed product from the sheet 1 for workpiece processing, it can be irradiated with active energy rays. easy to separate. In this embodiment, the above-mentioned active energy ray curable adhesive is preferably an ultraviolet curable adhesive. Thereby, the suppression effect of the said residual sludge can be made notable and exhibited.

構成黏著劑層3的活性能量線硬化性黏著劑,可以是以具有活性能量線硬化性的聚合物作為主成分者,也可以是以不具有活性能量線硬化性的聚合物和活性能量線硬化性的多官能單體及/或寡聚物的混合物作為主成分者。The active energy ray-curable adhesive constituting the adhesive layer 3 may be a polymer having an active energy ray-curable property as a main component, or may be a polymer that does not have an active energy ray-curable property and an active energy ray-curable adhesive. A mixture of permanent multifunctional monomers and/or oligomers as the main component.

活性能量線硬化性黏著劑是以具有活性能量線硬化性的聚合物作為主成分之情形,以下說明之。The case where the active energy ray-curable adhesive has an active energy ray-curable polymer as a main component will be described below.

具有活性能量線硬化性的聚合物,以在側鏈導入具有活性能量線硬化性的官能基(活性能量線硬化性基)的(甲基)丙烯酸酯(共)聚合物(A) (以下也有稱為「活性能量線硬化型聚合物(A)」)為佳。此活性能量線硬化型聚合物(A),以使具有含官能基的單體單元之(甲基)丙烯酸類共聚物(a1)、和具有和該官能基鍵結的取代基之含不飽和基化合物(a2)進行反應所得者為佳。A polymer having active energy ray curability is a (meth)acrylate (co)polymer (A) having an active energy ray curable functional group (active energy ray curable group) introduced into a side chain It is preferably referred to as "active energy ray-curable polymer (A)"). The active energy ray-curable polymer (A) is a (meth)acrylic copolymer (a1) having a functional group-containing monomer unit, and a (meth)acrylic copolymer (a1) having a substituent bonded to the functional group. Those obtained by reacting the base compound (a2) are preferred.

丙烯酸類共聚物(a1)由從含官能基單體所導入的構成單元、和從(甲基)丙烯酸酯單體或其衍生物所導入的構成單元所構成。The acrylic copolymer (a1) is composed of a structural unit introduced from a functional group-containing monomer and a structural unit introduced from a (meth)acrylate monomer or a derivative thereof.

作為丙烯酸類共聚物(a1)的構成單元之含官能基單體,以在分子內具有聚合性的雙鍵、及羥基、胺基、取代胺基、環氧基等的官能基之單體為佳。The functional group-containing monomer as a constituent unit of the acrylic copolymer (a1) is a monomer having a polymerizable double bond in the molecule, and a functional group such as a hydroxyl group, an amino group, a substituted amino group, an epoxy group, or the like. good.

作為上述含官能基單體的更具體之例,可列舉,例如,2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯、3-羥基丙基(甲基)丙烯酸酯、4-羥基丁基(甲基)丙烯酸酯等,此等可單獨或2種以上組合使用。As more specific examples of the above-mentioned functional group-containing monomers, for example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (methyl) ) acrylate, 4-hydroxybutyl (meth)acrylate, etc., these may be used alone or in combination of two or more.

作為構成丙烯酸類共聚物(a1)的(甲基)丙烯酸酯單體,可使用烷基的碳數1~20的烷基(甲基)丙烯酸酯、環烷基(甲基)丙烯酸酯、苄基(甲基)丙烯酸酯。這些之中,特佳為使用烷基的碳數為1~18的烷基(甲基)丙烯酸酯,例如,(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸2-乙基己酯等。As the (meth)acrylate monomer constituting the acrylic copolymer (a1), alkyl (meth)acrylates, cycloalkyl (meth)acrylates, benzyl base (meth)acrylate. Among these, it is particularly preferable to use an alkyl (meth)acrylate having an alkyl group having 1 to 18 carbon atoms, for example, methyl (meth)acrylate, ethyl (meth)acrylate, (meth)acrylic acid Propyl ester, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, etc.

丙烯酸類共聚物(a1),以通常3~100質量%、較佳5~40質量%的比例含有從上述含官能基單體所導入的構成單元,以通常0~97質量%、較佳60~95質量%的比例含有從(甲基)丙烯酸酯單體或其衍生物所導入的構成單元。The acrylic copolymer (a1) contains the structural unit introduced from the above-mentioned functional group-containing monomer in a ratio of usually 3 to 100 mass%, preferably 5 to 40 mass%, usually 0 to 97 mass%, preferably 60 mass%. The proportion of ~95% by mass contains the structural unit introduced from the (meth)acrylate monomer or its derivative.

可經由使上述含官能基單體、和(甲基)丙烯酸酯單體或其衍生物以常法共聚合而得到丙烯酸類共聚物(a1),但除了此等單體以外,也可共聚合二甲基丙烯醯胺、甲酸乙烯酯、乙酸乙烯酯、苯乙烯等。The acrylic copolymer (a1) can be obtained by copolymerizing the above-mentioned functional group-containing monomers and (meth)acrylate monomers or their derivatives by the usual method, but other than these monomers, it is also possible to copolymerize Dimethacrylamide, vinyl formate, vinyl acetate, styrene, etc.

藉由使具有上述含官能基單體單元的丙烯酸類共聚物(a1)、和具有和該官能基鍵結的取代基之含不飽和基化合物(a2)進行反應,以得到活性能量線硬化型聚合物(A)。The active energy ray-curable type is obtained by reacting the acrylic copolymer (a1) having the above-mentioned functional group-containing monomer unit and the unsaturated group-containing compound (a2) having a substituent bonded to the functional group. Polymer (A).

含不飽和基化合物(a2)所具有的取代基,可根據丙烯酸類共聚物(a1)所具有的含官能基單體單元的官能基種類而適當選擇。例如,當官能基是羥基、胺基或取代胺基的情形,取代基以異氰酸酯基或環氧基為佳,當官能基是環氧基的情形,取代基以胺基、羧基或氮丙啶基(aziridinyl)為佳。The substituent which the unsaturated group containing compound (a2) has can be selected suitably according to the kind of the functional group of the functional group containing monomeric unit which acrylic type copolymer (a1) has. For example, when the functional group is a hydroxyl group, an amine group or a substituted amino group, the substituent is preferably an isocyanate group or an epoxy group, and when the functional group is an epoxy group, the substituent is an amine group, carboxyl group or aziridine group. Aziridinyl is preferred.

又,含不飽和基化合物(a2)中,每1分子含有1~5個、較佳為含有1~2個的活性能量線聚合性的碳-碳雙鍵。作為如此的含不飽和基化合物(a2)的具體例,可列舉,例如,2-甲基丙烯醯氧基乙基異氰酸酯、間-異丙烯基-α,α-二甲基苄基異氰酸酯、甲基丙烯醯基異氰酸酯、烯丙基異氰酸酯、1,1-(雙丙烯醯氧基甲基)乙基異氰酸酯;藉由二異氰酸酯化合物或多元異氰酸酯化合物(polyisocyanate compound)和羥基乙基(甲基)丙烯酸酯的反應所得到的丙烯醯基單異氰酸酯化合物;藉由二異氰酸酯化合物或多元異氰酸酯化合物、和多元醇(polyol)化合物、和羥基乙基(甲基)丙烯酸酯的反應所得到的丙烯醯基單異氰酸酯化合物;(甲基)丙烯酸環氧丙酯(glycidyl(metha)acrylate);(甲基)丙烯酸、2-(1-氮丙啶基)乙基(甲基)丙烯酸酯、2-乙烯基-2-噁唑啉(2-vinyl-2-oxazoline)、2-異丙烯基-2-噁唑啉等。In addition, the unsaturated group-containing compound (a2) contains 1 to 5, preferably 1 to 2, active energy ray polymerizable carbon-carbon double bonds per molecule. Specific examples of such an unsaturated group-containing compound (a2) include, for example, 2-methacryloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, formazan Acryl isocyanate, allyl isocyanate, 1,1-(bisacryloxymethyl) ethyl isocyanate; by diisocyanate compound or polyisocyanate compound (polyisocyanate compound) and hydroxyethyl (meth)acrylic acid The acryl monoisocyanate compound obtained by the reaction of ester; the acryl monoisocyanate compound obtained by the reaction of diisocyanate compound or polyisocyanate compound, polyol (polyol) compound, and hydroxyethyl (meth)acrylate Isocyanate compounds; glycidyl (metha) acrylate (meth)acrylate; (meth)acrylic acid, 2-(1-aziridinyl) ethyl (meth)acrylate, 2-vinyl- 2-oxazoline (2-vinyl-2-oxazoline), 2-isopropenyl-2-oxazoline, etc.

含不飽和基化合物(a2),相對於上述丙烯酸類共聚物(a1)的含官能基單體,以通常10~100 mol%,較佳為20~95 mol%的比例使用。The unsaturated group-containing compound (a2) is used in a ratio of usually 10 to 100 mol%, preferably 20 to 95 mol%, based on the functional group-containing monomer of the acrylic copolymer (a1).

丙烯酸類共聚物(a1)和含不飽和基化合物(a2)的反應中,可根據官能基和取代基的組合,適當選擇反應的溫度、壓力、溶劑、時間、觸媒的有無、觸媒的種類。因此,存在於丙烯酸類共聚物(a1)中的官能基和含不飽和基化合物(a2)中的取代基反應,使不飽和基導入丙烯酸類共聚物(a1)中的側鏈,得到活性能量線硬化型聚合物(A)。In the reaction between the acrylic copolymer (a1) and the unsaturated group-containing compound (a2), the reaction temperature, pressure, solvent, time, presence or absence of a catalyst, and the presence or absence of a catalyst can be appropriately selected according to the combination of functional groups and substituents. type. Therefore, the functional group present in the acrylic copolymer (a1) reacts with the substituent in the unsaturated group-containing compound (a2) to introduce the unsaturated group into the side chain of the acrylic copolymer (a1) to obtain active energy Line hardening type polymer (A).

如此所得到的活性能量線硬化型聚合物(A)的重量平均分子量,以1萬以上為佳,特別是以15萬~150萬為佳,進一步以20萬~100萬為更佳。又,在本說明書中的重量平均分子量(Mw)是根據膠體滲透層析法(GPC法)所測定的聚苯乙烯所換算的值。The weight average molecular weight of the active energy ray-curable polymer (A) thus obtained is preferably at least 10,000, particularly preferably 150,000 to 1.5 million, and more preferably 200,000 to 1 million. In addition, the weight average molecular weight (Mw) in this specification is a polystyrene conversion value measured by colloid permeation chromatography (GPC method).

即使是在活性能量線硬化性黏著劑是以具有活性能量線硬化性的聚合物作為主成分的情形,活性能量線硬化性黏著劑也可更含有活性能量線硬化性的單體及/或寡聚物(B)。Even in the case where the active energy ray-curable adhesive contains an active energy ray-curable polymer as a main component, the active energy ray-curable adhesive may further contain an active energy ray-curable monomer and/or an oligosaccharide. Polymer (B).

作為活性能量線硬化性的單體及/或寡聚物(B),可使用,例如,多元醇和(甲基)丙烯酸的酯類等。As the active energy ray-curable monomer and/or oligomer (B), for example, a polyhydric alcohol, an ester of (meth)acrylic acid, and the like can be used.

作為如此的活性能量線硬化性的單體及/或寡聚物(B),可列舉,例如,環己基(甲基)丙烯酸酯、異莰基(甲基)丙烯酸酯等的單官能性丙烯酸酯類、三羥甲基丙烷三(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、二羥甲基三環癸基二(甲基)丙烯酸酯等的多官能性丙烯酸酯類、聚酯寡(甲基)丙烯酸酯(polyester oligo (meth)acrylate)、聚胺基甲酸乙酯寡(甲基)丙烯酸酯(polyurethane oligo (meth)acrylate)等。Examples of such active energy ray-curable monomers and/or oligomers (B) include monofunctional acrylic acid such as cyclohexyl (meth)acrylate and isobornyl (meth)acrylate. Esters, Trimethylolpropane Tri(meth)acrylate, Neopentylthritol Tri(meth)acrylate, Neopentylthritol Tetra(meth)acrylate, Dineopentylthritol Hexa(meth)acrylate Acrylates, 1,4-Butanediol Di(meth)acrylate, 1,6-Hexanediol Di(meth)acrylate, Polyethylene Glycol Di(meth)acrylate, Dimethylol Tris Polyfunctional acrylates such as cyclodecyl di(meth)acrylate, polyester oligo(meth)acrylate, polyurethane oligo(meth)acrylate (polyurethane oligo (meth) acrylate), etc.

在調配活性能量線硬化性的單體及/或寡聚物(B)的情形,活性能量線硬化性黏著劑中的活性能量線硬化性的單體及/或寡聚物(B)的含量,以5~80質量%為佳,特別是以20~60質量%為佳。When preparing the active energy ray-curable monomer and/or oligomer (B), content of the active energy ray-curable monomer and/or oligomer (B) in the active energy ray-curable adhesive , preferably 5-80% by mass, especially 20-60% by mass.

在此,在使用紫外線作為用以使活性能量線硬化性樹脂組合物硬化的活性能量線的情形中,以添加光聚合起始劑(C)者為佳,藉由此光聚合起始劑(C)的使用,可減少聚合硬化時間及光線照射量。Here, in the case of using ultraviolet rays as the active energy rays for curing the active energy ray-curable resin composition, it is preferable to add a photopolymerization initiator (C), by which the photopolymerization initiator ( The use of C) can reduce the polymerization hardening time and the amount of light exposure.

作為光聚合起始劑(C),可列舉,例如,二苯基酮(benzophenone)、乙醯苯(acetophenone)、苯偶姻(benzoin)、苯偶姻甲醚(benzoin methyl ether)、苯偶姻乙醚(benzoin ethyl ether)、苯偶姻異丙醚(, benzoin isopropyl ether)、苯偶姻異丁醚(benzoin isobutyl ether)、苯偶姻安息香酸(benzoin benzoic acid)、苯偶姻安息香酸甲酯(benzoin methyl benzoate)、苯偶姻二甲基縮酮(benzoin dimethyl ketal)、2,4-二乙基硫雜蒽酮(2,4-diethyl thioxanthone)、1-羥基環己基苯基酮(1-hydroxycyclohexyl phenyl ketone)、苄基二苯基硫醚(benzyl diphenyl sulfide)、一硫化四甲基秋蘭姆(tetramethylthiuram monosulfide)、偶氮雙異丁腈(azobisisobutyronitrile)、二苯基乙二酮(benzil)、聯苄(dibenzil)、聯乙醯(diacetyl)、β-氯蒽醌(β-chloroanthraquinone)、(2,4,6-三甲基苄基二苯基)膦氧化物((2,4,6-trimethylbenzyldiphenyl) phosphine oxide)、2-苯并噻唑-N,N-二乙基二硫代胺基甲酸(2-benzothiazole-N, N-diethyldithiocarbamate)、寡{2-羥基-2-甲基-1-[4-(1-丙烯基)苯基]丙酮} (oligo {2-hydroxy-2-methyl-1- [4- (1-propenyl) phenyl] propanone})、2,2-二甲氧基-1,2-二苯基乙烷-1-酮(2,2-dimethoxy-1,2-diphenylethane-1-one)等。這些可單獨使用,也可組合2種以上使用。As the photopolymerization initiator (C), for example, benzophenone (benzophenone), acetophenone (acetophenone), benzoin (benzoin), benzoin methyl ether (benzoin methyl ether), benzoin Benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl Esters (benzoin methyl benzoate), benzoin dimethyl ketal (benzoin dimethyl ketal), 2,4-diethyl thioxanthone (2,4-diethyl thioxanthone), 1-hydroxycyclohexyl phenyl ketone ( 1-hydroxycyclohexyl phenyl ketone), benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, diphenyl ethanedione ( benzil), bibenzyl (dibenzil), diacetyl (diaacetyl), β-chloroanthraquinone (β-chloroanthraquinone), (2,4,6-trimethylbenzyldiphenyl) phosphine oxide ((2, 4,6-trimethylbenzyldiphenyl) phosphine oxide), 2-benzothiazole-N,N-diethyldithiocarbamate (2-benzothiazole-N, N-diethyldithiocarbamate), oligo{2-hydroxy-2-methyl Base-1-[4-(1-propenyl)phenyl]propanone} (oligo {2-hydroxy-2-methyl-1-[4-(1-propenyl)phenyl] propanone}), 2,2-di Methoxy-1,2-diphenylethane-1-one (2,2-dimethoxy-1,2-diphenylethane-1-one), etc. These may be used individually or in combination of 2 or more types.

光聚合起始劑(C),相對於活性能量線硬化型聚合物(A) (在調配活性能量線硬化性的單體及/或寡聚物(B)的情形中,活性能量線硬化型聚合物(A)及活性能量線硬化性的單體及/或寡聚物(B)的總計量為100質量份) 100質量份,以0.1~10質量份、特別是0.5~6質量份的範圍的量使用為佳。The photopolymerization initiator (C), with respect to the active energy ray-curable polymer (A) (in the case of formulating an active energy ray-curable monomer and/or oligomer (B), the active energy ray-curable The total amount of the polymer (A) and the active energy ray-curable monomer and/or oligomer (B) is 100 parts by mass), 0.1 to 10 parts by mass, especially 0.5 to 6 parts by mass It is better to use the amount in the range.

在活性能量線硬化性黏著劑中,除上述成分外,也可適當調配其他成分。作為其他成分,可列舉,例如,不具活性能量線硬化性的聚合物成分或寡聚物成分(D)、交聯劑(E)等。In the active energy ray-curing adhesive, other components may be appropriately compounded in addition to the above-mentioned components. Examples of other components include, for example, a polymer component or oligomer component (D) that does not have active energy ray curability, a crosslinking agent (E), and the like.

作為不具活性能量線硬化性的聚合物成分或寡聚物成分(D),可列舉,例如,聚丙烯酸酯、聚酯、聚胺基甲酸乙酯、聚碳酸酯、聚烯烴等,以重量平均分子量(Mw)為3000~250萬的聚合物或寡聚物為佳。Examples of the polymer component or oligomer component (D) that does not have active energy ray hardening properties include polyacrylate, polyester, polyurethane, polycarbonate, polyolefin, etc., in terms of weight average Polymers or oligomers with a molecular weight (Mw) of 30 million to 2.5 million are preferred.

作為交聯劑(E),可使用多官能性化合物,這些多官能性化合物具有和活性能量線硬化型聚合物(A)等所具有之官能基的反應性。作為如此得多官能性化合物之例,可列舉,異氰酸酯化合物、環氧化合物、胺化合物、三聚氰胺(melamine)化合物、氮丙啶(aziridine)化合物、聯胺化合物(hydrazine)、醛化合物、噁唑啉(oxazoline)化合物、金屬烷氧(metal alkoxide)化合物、金屬螯合化合物、金屬鹽、銨鹽、反應性酚樹脂等。As the crosslinking agent (E), polyfunctional compounds having reactivity with functional groups contained in the active energy ray-curable polymer (A) and the like can be used. Examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, (oxazoline) compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts, reactive phenolic resins, etc.

藉由將此等其他成分(D)、(E)調配於活性能量線硬化性黏著劑中,可以改善硬化前的黏著性及剝離性、硬化後的強度、和其他層的接著性、保存穩定性等。此等其他成分的調配量沒有特別限定,可在相對於活性能量線硬化型聚合物(A) 100質量份為0~40質量份的範圍適當決定。By blending these other components (D) and (E) into the active energy ray-curable adhesive, the adhesiveness and peelability before curing, the strength after curing, the adhesion to other layers, and the storage stability can be improved sex etc. The compounding quantity of these other components is not specifically limited, It can determine suitably within the range of 0-40 mass parts with respect to 100 mass parts of active energy ray hardening type polymers (A).

然後,對於活性能量線硬化性黏著劑以不具活性能量線硬化性的聚合物成分和活性能量線硬化性的多官能單體及/或寡聚物的混合物作為主成分的情形,於下說明之。Next, the case where the active energy ray-curable adhesive contains a mixture of a non-active energy ray-curable polymer component and an active energy ray-curable polyfunctional monomer and/or oligomer as a main component will be described below. .

作為不具活性能量線硬化性的聚合物成分,可使用,例如,和上述丙烯酸類共聚物(a1)的相同成分。在活性能量線硬化性樹脂組合物中的不具活性能量線硬化性的聚合物成分的含量,以20~99.9質量%為佳,特別是以30~80質量%為佳。As the polymer component not having active energy ray curability, for example, the same components as those of the above-mentioned acrylic copolymer (a1) can be used. The content of the non-active energy ray-curable polymer component in the active energy ray-curable resin composition is preferably 20 to 99.9% by mass, particularly preferably 30 to 80% by mass.

作為活性能量線硬化性的多官能單體及/或寡聚物,可選擇和上述成分(B)相同者。不具活性能量線硬化性的聚合物成分和活性能量線硬化性的多官能單體及/或寡聚物的調配比例為,相對於聚合物成分100質量份,多官能單體及/或寡聚物以10~150質量份為佳,特別是以25~100質量份為佳。As the active energy ray-curable polyfunctional monomer and/or oligomer, the same ones as those of the above-mentioned component (B) can be selected. The compounding ratio of the non-active energy ray-curable polymer component and the active energy ray-curable polyfunctional monomer and/or oligomer is such that, with respect to 100 parts by mass of the polymer component, the polyfunctional monomer and/or oligomer It is preferably 10-150 parts by mass, especially 25-100 parts by mass.

即使在此情形,和上述相同,可適當調配光聚合起始劑(C)、交聯劑(E)等。Even in this case, a photopolymerization initiator (C), a crosslinking agent (E), and the like can be appropriately prepared in the same manner as above.

黏著劑層3的厚度,只要能在使用工件加工用片材1的各步驟中發揮適當的作用,就沒有特別限定。具體而言,以1~50 μm為佳,特別是以2~30 μm為佳,進一步以3~20 μm為更佳。The thickness of the adhesive layer 3 is not particularly limited as long as it can play an appropriate role in each step of using the workpiece processing sheet 1 . Specifically, it is preferably 1-50 μm, particularly preferably 2-30 μm, and more preferably 3-20 μm.

(3)剝離片 在本實施態樣中的剝離片6,在直到工件加工用片材1被使用之前保護黏著劑層3。在本實施態樣中的剝離片6,是直接積層於黏著劑層3上,但並不限於此等,也可以在黏著劑層3上積層其他的層(晶粒接合薄膜等),並在該其他的層上積層剝離片6。(3) Peeling sheet The release sheet 6 in this embodiment protects the adhesive layer 3 until the workpiece processing sheet 1 is used. In this embodiment, the release sheet 6 is directly laminated on the adhesive layer 3, but it is not limited thereto, and other layers (such as a die-bonding film) may be laminated on the adhesive layer 3, and The release sheet 6 is laminated on this other layer.

剝離片6的構成是任意的,可例示,例如,藉由剝離劑等對塑膠薄膜進行剝離處理而成者。作為塑膠薄膜的具體例,可列舉聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯等的聚酯膜,及聚丙烯或聚乙烯等的聚烯烴膜。作為剝離劑,可使用矽酮類、氟類、長鏈烷基類等,但這些之中,以便宜而可得到穩定性能的矽酮類為佳。剝離片的厚度沒有特別限制,通常為約20~250 μm。The structure of the peeling sheet 6 is arbitrary, and for example, one obtained by peeling a plastic film with a peeling agent or the like can be exemplified. Specific examples of plastic films include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyolefin films such as polypropylene and polyethylene. membrane. As the release agent, silicones, fluorines, long-chain alkyls, etc. can be used, but among these, silicones that are inexpensive and can provide stable performance are preferable. The thickness of the release sheet is not particularly limited, and is usually about 20 to 250 μm.

(4)其他的構件 在本實施態樣之工件加工用片材1,也可在黏著劑層3的和基材2相反側的面(以下有稱為「黏著面」的情形),積層接著劑層。在此情形,本實施態樣之工件加工用片材1藉由具有上述接著劑層,而可作為切割‧晶粒接合片材(dicing‧die bonding sheet)使用。如此的切割‧晶粒接合片材,在接著劑層的和黏著劑層相反側的面貼附工件,同時切割該工件和接著劑層,藉此可得到積層單片化的接著劑層的晶片。該晶片藉由此單片化接著劑層,可容易地固定於搭載該晶片的對象。作為構成上述接著劑層的材料,較佳為使用含有熱塑性樹脂和低分子量的熱硬化性接著成分者、或含有B階段(半硬化狀)的熱硬化型接著成分者等。(4) Other components In the workpiece processing sheet 1 of this embodiment, an adhesive layer may be laminated on the surface of the adhesive layer 3 opposite to the substrate 2 (hereinafter sometimes referred to as "adhesive surface"). In this case, the workpiece processing sheet 1 of this embodiment can be used as a dicing·die bonding sheet by having the above-mentioned adhesive layer. In such a dicing/die-bonding sheet, a workpiece is attached to the surface of the adhesive layer opposite to the adhesive layer, and the workpiece and the adhesive layer are cut at the same time, thereby obtaining a wafer in which the adhesive layer is stacked into individual pieces. . The chip can be easily fixed to the object on which the chip is mounted by the singulated adhesive layer. As the material constituting the adhesive layer, one containing a thermoplastic resin and a low-molecular-weight thermosetting adhesive component, or one containing a B-stage (semi-hardened) thermosetting adhesive component, or the like is preferably used.

又,在本實施態樣之工件加工用片材1,也可以在黏著劑層3中的黏著面積層保護膜形成層。在此情形,本實施態樣之工件加工用片材1可作為保護膜形成及切割用片材使用。如此的保護膜形成及切割用片材,在保護膜形成層的和黏著劑層相反側的面貼附工件,同時切割該工件和保護膜形成層,藉此可得到積層單片化的保護膜形成層的晶片。作為該被切斷物,以使用在一表面形成電路者為佳,在此情形,通常在和形成該電路的面相反側的面積層保護膜形成層。單片化的保護膜形成層在設定的時間點(較佳為切割步驟前)使其硬化,藉此可在工件或晶片形成具有充分耐久性的保護膜。保護膜形成層由未硬化的硬化性接著劑所構成為佳。In addition, in the workpiece processing sheet 1 of the present embodiment, a protective film forming layer may be formed on the adhesive surface of the adhesive layer 3 . In this case, the workpiece processing sheet 1 of this embodiment can be used as a protective film forming and cutting sheet. In such a protective film forming and dicing sheet, a workpiece is attached to the surface of the protective film forming layer opposite to the adhesive layer, and the workpiece and the protective film forming layer are cut at the same time, thereby obtaining a laminated and individualized protective film. Layers are formed on the wafer. As the cut object, it is preferable to use one on which a circuit is formed on one surface. In this case, a protective film forming layer is usually formed on the surface opposite to the surface on which the circuit is formed. The singulated protective film-forming layer is hardened at a predetermined point of time (preferably before the dicing step), whereby a protective film having sufficient durability can be formed on the workpiece or wafer. The protective film forming layer is preferably composed of an uncured curable adhesive.

在上述情形,雷射刻印的對象不是工件本身,而是接著劑層或保護膜。但是,即使是在這些情形,同樣能得到上述優良的雷射刻印性和雷射光耐受性的效果。In the above case, the object of laser marking is not the workpiece itself, but the adhesive layer or protective film. However, even in these cases, the above-mentioned effects of excellent laser marking and laser light resistance can be obtained similarly.

2.工件加工用片材的製造方法 作為製造工件加工用片材1的一例,可在剝離片6的剝離面,塗佈構成黏著劑層3的黏著劑和視需要而進一步含有溶劑的黏著劑層用的塗佈劑,並使此塗佈劑乾燥而形成黏著劑層3。之後,在黏著劑層3的露出面壓接基材2,得到由基材2、黏著劑層3及剝離片6所構成的工件加工用片材1。2. Manufacturing method of sheet for workpiece processing As an example of manufacturing the sheet 1 for workpiece processing, the adhesive constituting the adhesive layer 3 and, if necessary, a coating agent for the adhesive layer that further contains a solvent can be coated on the release surface of the release sheet 6, and the resulting The coating agent dries to form the adhesive layer 3 . Thereafter, the base material 2 is pressure-bonded to the exposed surface of the adhesive layer 3 to obtain the workpiece processing sheet 1 composed of the base material 2 , the adhesive layer 3 , and the peeling sheet 6 .

在本實施態樣之黏著劑層3,以可貼附導線框架等的模具者為佳。在此情形,黏著劑層3由活性能量線硬化性黏著劑所構成時,以不使活性能量線硬化性黏著劑硬化為佳。藉此,可將對導線框架等的模具的接著力維持在較高程度。The adhesive layer 3 in this embodiment is preferably one that can be attached to a mold such as a lead frame. In this case, when the adhesive layer 3 is composed of an active energy ray-curable adhesive, it is preferable not to harden the active energy ray-curable adhesive. Thereby, the adhesive force to the die|die, such as a lead frame, can be maintained at a high level.

基材2及黏著劑層3的積層體,也可根據需求進行半切割(half-cut),而形成所期望的形狀,例如,對應工件(半導體晶圓)的圓形等的形狀。在此情形,經半切割所產生的殘餘部分可適當去除。The laminated body of the base material 2 and the adhesive layer 3 can also be half-cut as required to form a desired shape, for example, a shape corresponding to a circle of the workpiece (semiconductor wafer). In this case, the residual portion produced by half-cutting can be properly removed.

3.工件加工用片材的使用方法 本實施態樣之工件加工用片材1,以用於切割為佳。作為切割的種類,可列舉,例如,刀片切割、隱形切割、電漿切割、雷射切割、水刀切割等,這些之中,以刀片切割及隱形切割為佳。作為工件,可列舉,例如,由無機材料所構成的半導體晶圓、玻璃板等之外,及各種封裝等,但不限定於此等。3. How to use the sheet for workpiece processing The workpiece processing sheet 1 of this embodiment is preferably used for cutting. The type of dicing includes, for example, blade dicing, stealth dicing, plasma dicing, laser cutting, water jet cutting, etc. Among these, blade dicing and stealth dicing are preferable. Examples of the workpiece include, for example, semiconductor wafers made of inorganic materials, glass plates, and various packages, but are not limited thereto.

使用本實施態樣之工件加工用片材1,從作為工件的半導體晶圓,經刀片切割或隱形切割製造晶片之方法,於下說明其中一例。An example of a method of manufacturing wafers from a semiconductor wafer as a workpiece by blade dicing or stealth dicing using the workpiece processing sheet 1 of this embodiment will be described below.

首先,將已捲取成輥狀的工件加工用片材1一邊剝離剝離片6一邊陸續放出,如第2圖所示,在工件加工用片材1的黏著劑層3貼附半導體晶圓7及導線框架8。藉此得到具有在工件加工用片材1的黏著劑層3側的面積層半導體晶圓7及導線框架8的結構之積層結構體(以下有稱為「積層結構體L」的情形)。First, the workpiece processing sheet 1 that has been wound into a roll is released one after another while peeling off the release sheet 6, and as shown in FIG. 2, a semiconductor wafer 7 is attached to the adhesive layer 3 of the workpiece processing sheet 1. and lead frame 8. Thereby, a laminated structure having a structure in which the semiconductor wafer 7 and the lead frame 8 are layered on the side of the adhesive layer 3 of the workpiece processing sheet 1 (hereinafter sometimes referred to as "laminated structure L") is obtained.

然後,將積層結構體L進行雷射刻印步驟。具體而言,使用雷射刻印用的雷射照射裝置,對上述半導體晶圓7通過工件加工用片材1照射雷射光,在半導體晶圓7施行所期望的印字。作為雷射光,主要使用波長532 nm的雷射光。Then, the laminated structure L is subjected to a laser marking step. Specifically, a laser irradiation device for laser marking is used to irradiate the semiconductor wafer 7 with laser light through the workpiece processing sheet 1 to perform desired printing on the semiconductor wafer 7 . As the laser light, laser light with a wavelength of 532 nm is mainly used.

本實施態樣之工件加工用片材1中,由於基材2的物性如前述所設定,雷射光容易透過,因此可對工件良好地進行雷射刻印的印字,可形成精密度高的印字。又,在基材2中雷射光的能量難以被吸收,所以可抑制基材2燒焦。因此,沒有起因於基材2燒焦所造成的透光性下降,可通過工件加工用片材1良好地視認形成於工件的印字。In the workpiece processing sheet 1 of this embodiment, since the physical properties of the base material 2 are set as described above, the laser light can easily pass through, so laser marking can be performed well on the workpiece, and high-precision printing can be formed. In addition, since the energy of the laser light is hardly absorbed in the base material 2, burning of the base material 2 can be suppressed. Therefore, there is no decrease in translucency due to burning of the base material 2 , and the printed characters formed on the workpiece can be seen favorably through the workpiece processing sheet 1 .

然後,將積層結構體L進行切割步驟。在刀片切割的情形,使用切割刀片,切斷半導體晶圓7而分割,藉此得到晶片。之後,實施使工件加工用片材1伸長的延展步驟,以成為在之後的撿拾步驟容易撿拾的狀態,而擴大晶片間的間隔。Then, the laminated structure L is subjected to a cutting step. In the case of blade dicing, the semiconductor wafer 7 is cut and divided using a dicing blade to obtain wafers. Thereafter, a stretching step of stretching the workpiece processing sheet 1 is performed to make it easy to pick up in the subsequent picking up step, thereby widening the gap between wafers.

另一方面,在隱形切割的情形,使用分割加工用雷射照射裝置(雷射切割機),對上述半導體晶圓7通過工件加工用片材1照射雷射光,在半導體晶圓7內形成改質層。又,由於基材2的物性如前述所設定,雷射切割機的雷射光的透過性也優良。之後,藉由實施使工件加工用片材1伸長的延展步驟,將作用力(主面內方向的拉力)施加至半導體晶圓7。結果,分割黏貼於工件加工用片材1的半導體晶片7,而得到晶片。On the other hand, in the case of stealth dicing, using a laser irradiation device (laser cutter) for dividing processing, laser light is irradiated to the above-mentioned semiconductor wafer 7 through the sheet 1 for workpiece processing, and a modification is formed in the semiconductor wafer 7. stratum. In addition, since the physical properties of the substrate 2 are set as described above, the laser light transmittance of the laser cutting machine is also excellent. Thereafter, by performing an elongation step of elongating the workpiece processing sheet 1 , an acting force (pull force in the main plane inward direction) is applied to the semiconductor wafer 7 . As a result, the semiconductor wafer 7 bonded to the workpiece processing sheet 1 is divided to obtain wafers.

然後,使用撿拾裝置,從工件加工用片材1撿拾晶片。在此,在工件加工用片材1的黏著劑層3是由活性能量線硬化性的黏著劑所構成的情形,較佳為在上述撿拾之前,通過基材2對黏著劑層3照射活性能量線。藉此,可使黏著劑層3的黏著力下降,能夠容易地進行晶片的撿拾。上述活性能量線通常是使用紫外線、電子線等,特別是以容易取得的紫外線為佳。Then, a wafer is picked up from the workpiece processing sheet 1 using a pick-up device. Here, when the adhesive layer 3 of the workpiece processing sheet 1 is composed of an active energy ray-curable adhesive, it is preferable to irradiate the adhesive layer 3 with active energy through the substrate 2 before the above-mentioned pickup. Wire. Thereby, the adhesive force of the adhesive layer 3 can be reduced, and a wafer can be picked up easily. The above-mentioned active energy rays are usually ultraviolet rays, electron rays, etc., and ultraviolet rays, which are easily available, are particularly preferred.

上述紫外線的照射,可藉由高壓水銀燈、無極燈(fusion lamp)、氙燈、LED等而進行,紫外線的照射量,以照度為50 mW/cm2 以上、1000 mW/cm2 以下為佳。紫外線的光量,以50 mJ/cm2 以上為佳,特別是以80 mJ/cm2 以上為佳,進一步以100 mJ/cm2 以上為更佳。又,紫外線的光量,以2000 mJ/cm2 以下為佳,特別是以1000 mJ/cm2 以下為佳,進一步以500 mJ/cm2 以下為更佳。The above-mentioned irradiation of ultraviolet rays can be carried out by means of high-pressure mercury lamps, fusion lamps, xenon lamps, LEDs, etc., and the irradiation amount of ultraviolet rays is preferably 50 mW/cm 2 or more and 1000 mW/cm 2 or less. The amount of ultraviolet light is preferably at least 50 mJ/cm 2 , particularly preferably at least 80 mJ/cm 2 , and more preferably at least 100 mJ/cm 2 . Also, the amount of ultraviolet light is preferably not more than 2000 mJ/cm 2 , particularly preferably not more than 1000 mJ/cm 2 , and more preferably not more than 500 mJ/cm 2 .

如前所述,由於起因於雷射刻印的基材2的燒焦受到抑制,所以即使如上述通過基材2對黏著劑層3照射紫外線,也可以使黏著劑層3良好地硬化。因此,不易發生在撿拾後的晶片附著黏著劑的殘餘糊渣的問題。As described above, since burning of the base material 2 caused by laser marking is suppressed, the adhesive layer 3 can be cured satisfactorily even when the base material 2 is irradiated with ultraviolet rays to the adhesive layer 3 as described above. Therefore, the problem that residual paste of the adhesive adheres to the picked-up wafer is less likely to occur.

以上說明之實施態樣是為了用以容易理解本發明而記載,並非用於限定本發明而記載。因此,上述實施態樣所揭示之各要件,也包含屬於本發明技術範圍的所有的設計變更或均等物。The embodiments described above are described for easy understanding of the present invention, and are not described for limiting the present invention. Therefore, the requirements disclosed in the above embodiments also include all design changes or equivalents within the technical scope of the present invention.

例如,在工件加工用片材1中的基材2和黏著劑層3之間、或和基材2中的黏著劑層3的相反側的面,也可設有其他的層。 [實施例]For example, another layer may be provided between the substrate 2 and the adhesive layer 3 in the workpiece processing sheet 1 , or on the surface of the substrate 2 opposite to the adhesive layer 3 . [Example]

以下藉由實施例等更具體說明本發明,但本發明範圍不限定於這些實施例等。Hereinafter, the present invention will be more specifically described by way of examples and the like, but the scope of the present invention is not limited to these examples and the like.

[實施例1] (1) 基材的製作 將低密度聚乙烯的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度80 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Example 1] (1) Fabrication of base material A low-density polyethylene resin composition was extruded with a small T-die extruder (manufactured by Toyo Seiki Seisakusho Co., Ltd., product name "LABO PLASTOMILL") to produce a base material composed of a resin film with a thickness of 80 μm. The surface roughness (arithmetic average roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and is shown in Table 1.

(2)黏著劑層用塗佈劑的調配 將丙烯酸丁酯72質量份、和2-羥基乙基丙烯酸酯(HEA)28質量份進行共聚合,使所得到的共聚物和甲基丙烯醯氧基乙基異氰酸酯(MOI)以相對於共聚物HEA的80 mol%進行反應,得到側鏈具有活性能量線聚合性基的活性能量線硬化性丙烯酸類聚合物(重量平均分子量50萬)。(2) Preparation of coating agent for adhesive layer Copolymerize 72 parts by mass of butyl acrylate and 28 parts by mass of 2-hydroxyethyl acrylate (HEA), and make the resulting copolymer and methacryloxyethyl isocyanate (MOI) relative to the copolymer 80 mol% of HEA was reacted to obtain an active energy ray-curable acrylic polymer (weight average molecular weight: 500,000) having an active energy ray polymerizable group in the side chain.

相對於上述活性能量線硬化性丙烯酸類聚合物100質量份(固形分濃度;以下相同),調配光聚合起始劑(BASF社製,製品名「Irgacure184」) 3.0質量份及異氰酸酯化合物(Tosoh社製,製品名「Coronate L」) 1.0質量份,且以溶劑稀釋,藉此得到黏著劑層用塗佈劑。3.0 parts by mass of a photopolymerization initiator (manufactured by BASF, product name "Irgacure 184") and an isocyanate compound (Tosoh Corp. made, product name "Coronate L") 1.0 parts by mass, and diluted with a solvent to obtain a coating agent for an adhesive layer.

(3)工件加工用片材之製造 準備在厚度38 μm的聚對苯二甲酸乙二酯膜的一面形成矽酮類的剝離劑層之剝離片(Lintech社製,製品名「SP-PET 381031」),在此剝離片的剝離面上以刀塗佈機塗佈上述的黏著劑層用塗佈劑,使其乾燥而形成厚度10 μm的黏著劑層。在此黏著劑層上,和上述所製作的基材的正面對齊而貼合兩者,以得到由基材(80 μm)/黏著劑層(10 μm)/剝離片所構成的積層體。(3) Manufacture of sheets for workpiece processing Prepare a release sheet (manufactured by Lintech, product name "SP-PET 381031") with a silicone-based release agent layer formed on one side of a polyethylene terephthalate film with a thickness of 38 μm. The above-mentioned coating agent for the adhesive layer was applied with a knife coater, and dried to form an adhesive layer with a thickness of 10 μm. On this adhesive layer, the front surface of the base material prepared above was aligned and laminated to obtain a laminate consisting of base material (80 μm)/adhesive layer (10 μm)/release sheet.

對上述所得到的積層體,從上述基材側,以切斷基材和黏著劑層的積層體之方式進行半切割,形成直徑370 mm的圓形的工件加工用片材。The laminate obtained above was half-cut from the base material side to cut the laminate of the base material and the adhesive layer to form a circular workpiece processing sheet with a diameter of 370 mm.

[實施例2] 將聚氯乙烯的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度80 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Example 2] The polyvinyl chloride resin composition was extruded with a small T-shaped extruder (manufactured by Toyo Seiki Seisakusho Co., Ltd., product name "LABO PLASTOMILL") to produce a base material composed of a resin film with a thickness of 80 μm. The surface roughness (arithmetic average roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and is shown in Table 1.

除使用上述基材外,其餘和實施例1相同,製造工件加工用片材。Except for using the above-mentioned base material, the rest is the same as in Example 1, and a sheet for workpiece processing is produced.

[實施例3] 將乙烯-(甲基)丙烯酸共聚物的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度80 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Example 3] The resin composition of ethylene-(meth)acrylic acid copolymer was extruded with a small T-shaped extruder (manufactured by Toyo Seiki Seisakusho Co., Ltd., product name "LABO PLASTOMILL") to produce a substrate composed of a resin film with a thickness of 80 μm. material. The surface roughness (arithmetic average roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and is shown in Table 1.

除使用上述基材外,其餘和實施例1相同,製造工件加工用片材。Except for using the above-mentioned base material, the rest is the same as in Example 1, and a sheet for workpiece processing is produced.

[比較例1] 將乙烯-(甲基)丙烯酸共聚物的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度80 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Comparative example 1] The resin composition of ethylene-(meth)acrylic acid copolymer was extruded with a small T-shaped extruder (manufactured by Toyo Seiki Seisakusho Co., Ltd., product name "LABO PLASTOMILL") to produce a substrate composed of a resin film with a thickness of 80 μm. material. The surface roughness (arithmetic average roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and is shown in Table 1.

除使用上述基材外,其餘和實施例1相同,製造工件加工用片材。Except for using the above-mentioned base material, the rest is the same as in Example 1, and a sheet for workpiece processing is produced.

[比較例2] 將聚乙烯的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度110 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Comparative example 2] A polyethylene resin composition was extruded with a small T-die extruder (manufactured by Toyo Seiki Seisakusho Co., Ltd., product name "LABO PLASTOMILL") to produce a base material composed of a resin film with a thickness of 110 μm. The surface roughness (arithmetic average roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and is shown in Table 1.

除使用上述基材外,其餘和實施例1相同,製造工件加工用片材。Except for using the above-mentioned base material, the rest is the same as in Example 1, and a sheet for workpiece processing is produced.

[比較例3] 將低密度聚乙烯的樹脂組合物藉由小型T字模押出機(東洋精機製作所社製,製品名「LABO PLASTOMILL」)押出成形,製作厚度80 μm之由樹脂膜所構成的基材。所得到的基材的背面的表面粗糙度(算術平均粗糙度(Ra)及最大高度粗糙度(Rz))藉由後述方法測定,如表1所示。[Comparative example 3] A low-density polyethylene resin composition was extruded with a small T-die extruder (manufactured by Toyo Seiki Seisakusho Co., Ltd., product name "LABO PLASTOMILL") to produce a base material composed of a resin film with a thickness of 80 μm. The surface roughness (arithmetic average roughness (Ra) and maximum height roughness (Rz)) of the back surface of the obtained base material was measured by the method mentioned later, and is shown in Table 1.

除使用上述基材外,其餘和實施例1相同,製造工件加工用片材。Except for using the above-mentioned base material, the rest is the same as in Example 1, and a sheet for workpiece processing is produced.

[試驗例1] >基材的表面粗糙度的測定> 針對實施例及比較例所製作的基材的背面之算術平均粗糙度(Ra;單位μm)及最大高度粗糙度(Rz;單位μm),使用接觸式表面粗糙度計(Mitutoyo社製,製品名「SV3000S4」),以下列測定條件,根據JIS B0601:1999測定。結果如表1所示。 [測定條件] 評價長度:10 mm 基準長度:2.5 mm 掃描速度:1.0 mm/sec 截止值(cutoff value):0.25 mm[Test Example 1] >Measurement of Surface Roughness of Substrate> For the arithmetic mean roughness (Ra; unit μm) and the maximum height roughness (Rz; unit μm) of the backside of the substrates produced in Examples and Comparative Examples, a contact surface roughness meter (manufactured by Mitutoyo, product name "SV3000S4") was measured in accordance with JIS B0601:1999 under the following measurement conditions. The results are shown in Table 1. [measurement conditions] Evaluation length: 10 mm Base length: 2.5 mm Scanning speed: 1.0mm/sec Cutoff value: 0.25mm

[試驗例2] >透光率的測定> 對於實施例及比較例所製作的基材,使用紫外-可見-近紅外分光光度計(島津製作所社製,製品名「UV-3600」),以直接受光法測定透光率,摘出波長400 nm、532 nm及800 nm的透光率。結果如表1所示。[Test example 2] >Measurement of light transmittance> For the substrates prepared in Examples and Comparative Examples, the light transmittance was measured by the direct light receiving method using an ultraviolet-visible-near-infrared spectrophotometer (manufactured by Shimadzu Corporation, product name "UV-3600"), with an extraction wavelength of 400 nm , 532 nm and 800 nm transmittance. The results are shown in Table 1.

[試驗例3] >雷射刻印性的評價> 使用膠帶貼膜(tape mounter)裝置(Lintech社製,製品名「RAD-2700F/12」),從實施例及比較例的工件加工用片材將剝離片剝離,使露出的黏著劑層貼附於經#2000研磨後的矽晶圓(直徑:12吋,厚度:350 μm)的研磨面。與此同時,將露出的黏著劑層貼附於導線框架。[Test Example 3] >Evaluation of Laser Marking> Using a tape mounter (manufactured by Lintech, product name "RAD-2700F/12"), the release sheet was peeled off from the workpiece processing sheets of Examples and Comparative Examples, and the exposed adhesive layer was attached to The grinding surface of a silicon wafer (diameter: 12 inches, thickness: 350 μm) after #2000 grinding. At the same time, attach the exposed adhesive layer to the lead frame.

使用雷射刻印機(EO TECHNICS社製,製品名「CSM300M」),隔著工件加工用片材對矽晶圓照射波長532 nm的雷射光,在矽晶圓進行利用雷射刻印的印字(文字大小:0.2 mm×0.3 mm,文字間隔:0.3 mm,文字數:20個字)。Using a laser marking machine (manufactured by EO TECHNICS, product name "CSM300M"), the silicon wafer is irradiated with laser light with a wavelength of 532 nm through the sheet for workpiece processing, and the lettering (text) by laser marking is performed on the silicon wafer. Size: 0.2 mm×0.3 mm, character spacing: 0.3 mm, number of characters: 20 characters).

之後,從矽晶圓剝離工件加工用片材,使用數位顯微鏡(KEYENCE社製,製品名「DigitalMicroscope VHX-1000,倍率:100倍」)確認形成於矽晶圓的印字。其結果,印字不粗亂、精密度高而被形成者評價為◎,印字有一點粗亂、但精密度某種程度的高而被形成者評價為○,印字粗亂、精密度低而被形成者評價為╳。結果如表1所示。Thereafter, the workpiece processing sheet was peeled off from the silicon wafer, and the printed characters formed on the silicon wafer were checked using a digital microscope (manufactured by KEYENCE, product name "Digital Microscope VHX-1000, magnification: 100 times"). As a result, the print was not rough and the precision was high, and the maker rated it as ◎, the print was a little rough, but the precision was high to a certain extent, and the maker rated it as ○, and the print was rough and the precision was low, and it was rated as ◎. The creator rated it as ╳. The results are shown in Table 1.

[試驗例4] >雷射光耐受性的評價> 和試驗例3相同,隔著工件加工用片材對矽晶圓照射波長532 nm的雷射光,而在矽晶圓進行印字。之後,從矽晶圓剝離工件加工用片材,以目視確認在工件加工用片材的基材是否有起因於雷射光的燒焦(印字)。其結果,基材沒有燒焦(印字)者評價為○,基材有燒焦(印字)者評價為╳。結果如表1所示。[Test Example 4] >Evaluation of Laser Light Resistance> As in Experiment 3, the silicon wafer was irradiated with laser light having a wavelength of 532 nm through the workpiece processing sheet to print on the silicon wafer. Thereafter, the workpiece processing sheet was peeled off from the silicon wafer, and whether or not there was burning (printing) on the base material of the workpiece processing sheet due to laser light was checked visually. As a result, the case where the base material was not burnt (printed) was evaluated as ○, and the case where the base material was burnt (printed) was evaluated as ╳. The results are shown in Table 1.

[表1]

Figure 108112637-A0304-0001
[Table 1]
Figure 108112637-A0304-0001

從表1可知,實施例所得到的工件加工用片材為雷射刻印性優良、且對雷射光具有耐受性者。 [產業可利用性]As can be seen from Table 1, the workpiece processing sheets obtained in Examples are excellent in laser marking properties and have tolerance to laser light. [Industrial availability]

本發明之工件加工用片材,適合用於包含對半導體晶圓、玻璃板等的工件,而隔著該工件加工用片材進行雷射刻印的步驟之用途。The workpiece processing sheet of the present invention is suitable for applications including a step of performing laser marking on a workpiece such as a semiconductor wafer or a glass plate through the workpiece processing sheet.

1‧‧‧工件加工用片材 2‧‧‧基材 3‧‧‧黏著劑層 6‧‧‧剝離片 7‧‧‧半導體晶圓 8‧‧‧導線框架1‧‧‧Sheets for workpiece processing 2‧‧‧Substrate 3‧‧‧adhesive layer 6‧‧‧Peeling sheet 7‧‧‧semiconductor wafer 8‧‧‧Lead frame

第1圖為本發明之一實施態樣之工件加工用片材的剖面圖。 第2圖為本發明之一實施態樣之工件加工用片材的使用例,具體顯示積層結構體的剖面圖。Fig. 1 is a cross-sectional view of a sheet for workpiece processing according to an embodiment of the present invention. Fig. 2 is a usage example of the workpiece processing sheet according to an embodiment of the present invention, specifically showing a cross-sectional view of a laminated structure.

1:工件加工用片材 1: Sheet for workpiece processing

2:基材 2: Substrate

3:黏著劑層 3: Adhesive layer

6:剝離片 6: Peel off sheet

Claims (6)

一種雷射刻印方法,其係隔著工件加工用片材對工件進行雷射刻印的方法,其特徵在於,該工件加工用片材至少具有基材與積層於該基材的第1面側的黏著劑層,在該基材的第2面的算術平均粗糙度(Ra)為0.01μm以上、0.4μm以下,在該基材的第2面的最大高度粗糙度(Rz)為0.01μm以上、2.5μm以下,該基材的波長532nm的透光率為40%以上,該雷射刻印係使用波長532nm的雷射光來進行。 A laser marking method for performing laser marking on a workpiece through a workpiece processing sheet, wherein the workpiece processing sheet has at least a base material and a substrate laminated on the first surface side of the base material. The adhesive layer has an arithmetic average roughness (Ra) of 0.01 μm or more and 0.4 μm or less on the second surface of the substrate, and a maximum height roughness (Rz) of 0.01 μm or more on the second surface of the substrate, 2.5 μm or less, the light transmittance of the substrate at a wavelength of 532 nm is 40% or more, and the laser marking is performed using laser light with a wavelength of 532 nm. 如申請專利範圍第1項所述之雷射刻印方法,其中該基材的波長400nm的透光率為40%以上。 The laser marking method described in claim 1, wherein the light transmittance of the substrate at a wavelength of 400 nm is above 40%. 如申請專利範圍第1項所述之雷射刻印方法,其中該基材的波長800nm的透光率為45%以上。 The laser marking method as described in claim 1, wherein the light transmittance of the base material at a wavelength of 800 nm is 45% or more. 如申請專利範圍第1至3項任一項所述之雷射刻印方法,其中該工件加工用片材係用於切割。 The laser marking method as described in any one of items 1 to 3 of the scope of application, wherein the sheet for workpiece processing is used for cutting. 如申請專利範圍第4項所述之雷射刻印方法,其中該工件加工用片材係用於隱形切割。 The laser marking method described in item 4 of the scope of the patent application, wherein the workpiece processing sheet is used for stealth cutting. 一種工件加工用片材,其為至少具有基材與積層於該基材的第1面側的黏著劑層之工件加工用片材,其特徵在於,在該基材的第2面的算術平均粗糙度(Ra)為0.01μm以上、未滿0.1μm,在該基材的第2面的最大高度粗糙度(Rz)為0.01μm以上、2.5μm以下,該基材的波長532nm的透光率為40%以上。 A workpiece processing sheet having at least a base material and an adhesive layer laminated on the first surface side of the base material, characterized in that the arithmetic mean of the second surface of the base material The roughness (Ra) is 0.01 μm or more and less than 0.1 μm, the maximum height roughness (Rz) on the second surface of the substrate is 0.01 μm or more and 2.5 μm or less, and the light transmittance of the substrate at a wavelength of 532 nm more than 40%.
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