TW201946953A - Semiconductor device and method of manufacturing the same for providing an excellent adhesion between a sealing material and an interlayer insulating film in a rewiring layer - Google Patents

Abstract

The subject of the present invention is to provide a semiconductor device having an excellent adhesion between a sealing material and an interlayer insulating film in a rewiring layer, and a method of manufacturing the same. The semiconductor device (1) of the present invention is characterized by including: a semiconductor chip (2), a sealing material (3) covering the semiconductor chip, and a rewiring layer (4) having an area larger than the semiconductor chip in a top view, wherein the i-ray transmittance of the interlayer insulating film (6) of the rewiring layer is 80% or less. According to the present invention, it is able to provide a semiconductor device having an excellent adhesion between the sealing material and the interlayer insulating film in the rewiring layer, and a method of manufacturing the same.

Description

Semiconductor device and manufacturing method thereof

The present invention relates to a semiconductor device and a method for manufacturing the same.

There are various methods of semiconductor packaging methods for semiconductor devices. As a semiconductor packaging method, for example, a sealing method (molding resin) is used to cover a semiconductor wafer to form an element sealing material, and then a packaging method for forming a rewiring layer electrically connected to the semiconductor wafer. Among semiconductor packaging methods, in recent years, fan-out semiconductor packaging methods have become mainstream.

In a fan-out type semiconductor package, a semiconductor wafer is covered with a sealing material to form a wafer sealing body having a larger wafer size than the semiconductor wafer. Further, a redistribution layer is formed up to a region of the semiconductor wafer and the sealing material. The redistribution layer is formed with a thin film thickness. In addition, since the redistribution layer can be formed to the area of the sealing material, the number of external connection terminals can be increased.

For example, as a fan-out type semiconductor device, the following Patent Document 1 is known.
[Prior technical literature]
[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2011-129767

[Problems to be solved by the invention]

In a fan-out type semiconductor device, high adhesion between an interlayer insulating film in a redistribution layer and a sealing material is required. However, the adhesion between the interlayer insulating film and the sealing material in the redistribution layer of the conventional fan-out type semiconductor device is insufficient.

The present invention has been made in view of this point, and an object thereof is to provide a semiconductor device having excellent adhesion between an interlayer insulating film and a sealing material in a redistribution layer, and a method for manufacturing the same.
[Technical means to solve the problem]

The semiconductor device of the present invention is characterized by including a semiconductor wafer, a sealing material covering the semiconductor wafer, and a redistribution layer having an area larger than the semiconductor wafer in a plan view, and the i-ray transmittance of the interlayer insulating film of the redistribution layer is 10 in thickness. The μm conversion is 80% or less.

In the present invention, it is preferable that the sealing material is directly connected to the interlayer insulating film.

In this invention, it is preferable that the said sealing material contains an epoxy resin.

In the present invention, it is preferable that the interlayer insulating film includes at least one selected from the group consisting of polyfluorene imine, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

In the present invention, it is preferable that the interlayer insulating film contains a polyfluorene imide having a structure of the following general formula (1).
[Chemical 1]

(In the general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more)

In the present invention, it is preferable that X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the general formula (1) is a divalent organic group containing an aromatic ring.

In the present invention, it is preferable that X ¹ in the general formula (1) includes at least one structure represented by the following general formulas (2) to (4).
[Chemical 2]

[Chemical 3]

[Chemical 4]

(In the general formula (4), R ₉ is an oxygen atom, a sulfur atom, or a divalent organic group)

In the present invention, it is preferable that X ¹ in the general formula (1) includes a structure represented by the following general formula (5).
[Chemical 5]

In the present invention, it is preferable that Y ¹ in the general formula (1) includes at least one structure represented by the following general formulas (6) to (8).
[Chemical 6]

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group or a hydroxyl group having 1 to 5 carbon atoms, which may be the same or different)
[Chemical 7]

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group or a hydroxyl group having 1 to 5 carbon atoms, and may be different from each other or the same)
[Chemical 8]

(R ₂₂ is a divalent organic group, R ₂₃ ~ R ₃₀ is a hydrogen atom, a halogen atom, having 1 to 5 carbon atoms of a divalent aliphatic group or a hydroxyl group, may be identical or different)

In the present invention, it is preferable that Y ¹ in the general formula (1) includes a structure represented by the following general formula (9).
[Chemical 9]

In the present invention, it is preferable that the polybenzoxazole includes a polybenzoxazole having a structure of the following general formula (10).
[Chemical 10]

(In the general formula (10), U and V are divalent organic groups)

In the present invention, it is preferable that U in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms.

In the present invention, it is preferable that U in the general formula (10) is a linear alkylene group having 1 to 8 carbon atoms and a part or all of hydrogen atoms substituted with fluorine atoms.

In the present invention, the V-based general formula (10) is preferably a divalent organic group containing an aromatic group.

In the present invention, it is preferable that V in the general formula (10) includes at least one structure represented by the following general formulae (6) to (8).
[Chemical 11]

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are monovalent aliphatic groups having a hydrogen atom and a carbon number of 1 to 5, which may be the same or different)
[Chemical 12]

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, and a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same)
[Chemical 13]

(R ₂₂ is a divalent organic group, R ₂₃ ~ R ₃₀ is a hydrogen atom, a halogen atom, having 1 to 5 carbon atoms of a divalent aliphatic group, may be identical or different)

In the present invention, it is preferable that V in the general formula (10) includes a structure represented by the following general formula (9).
[Chemical 14]

In the present invention, V in the general formula (10) is preferably a divalent organic group having 1 to 40 carbon atoms.

In the present invention, V in the general formula (10) is preferably a divalent chain aliphatic group having 1 to 20 carbon atoms.

In the present invention, it is preferable that the polymer having a phenolic hydroxyl group contains a novolac-type phenol resin.

In the present invention, it is preferable that the polymer having a phenolic hydroxyl group includes a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group.

In the present invention, when the redistribution layer is observed in a cross-section, the redistribution layer preferably includes: a first interlayer insulating film layer; a second interlayer insulating film layer; and an intermediate layer, which is interspaced with the first layer. The insulating film layer is a layer different from the second interlayer insulating film layer, and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer.

In the present invention, it is preferable that the first interlayer insulating film layer is in contact with the sealing material, and the i-ray transmittance of the first interlayer insulating film layer is 80% or less in terms of thickness of 10 μm.

In the present invention, it is preferable that the composition of the second interlayer insulating film layer is different from that of the first interlayer insulating film layer.

In the present invention, the i-ray transmittance of the second interlayer insulating film layer is preferably different from the i-ray transmittance of the first interlayer insulating film layer.

In the present invention, the semiconductor device is preferably a fan-out type wafer-level wafer-size package-type semiconductor device.

In the present invention, the i-ray transmittance of the interlayer insulating film of the redistribution layer is preferably 70% or less in terms of thickness 10 μm.

In the present invention, the i-ray transmittance of the interlayer insulating film of the redistribution layer is preferably 60% or less in terms of thickness 10 μm.

In the present invention, the i-ray transmittance of the interlayer insulating film of the redistribution layer is preferably 50% or less in terms of thickness of 10 μm.

In the present invention, the i-ray transmittance of the interlayer insulating film of the redistribution layer is preferably 40% or less in terms of a thickness of 10 μm.

In the present invention, the i-ray transmittance of the interlayer insulating film of the redistribution layer is preferably 30% or less in terms of a thickness of 10 μm.

In the present invention, the i-ray transmittance of the interlayer insulating film of the redistribution layer is preferably 5% or more in terms of a thickness of 10 μm.

In the present invention, the i-ray transmittance of the interlayer insulating film of the redistribution layer may be 10% or more in terms of thickness 10 μm.

In the present invention, the i-ray transmittance of the interlayer insulating film of the redistribution layer may be 20% or more in terms of a thickness of 10 μm.

The method for manufacturing a semiconductor device according to the present invention is characterized by including a step of covering a semiconductor wafer with a sealing material, and a step of forming a redistribution layer having an area larger than that of the semiconductor wafer in plan view and including an interlayer insulating film, and the interlayer insulating film. The i-ray transmittance is 80% or less in terms of thickness of 10 μm.

In the present invention, it is preferable that the interlayer insulating film is formed by using a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group to form the interlayer insulating film. step.

In the present invention, it is preferable that the step of forming the interlayer insulating film includes forming the above by using the photosensitive resin composition adjusted by additives such that the i-ray transmittance of the interlayer insulating film becomes 80% or less in terms of thickness of 10 μm. Steps of interlayer insulating film.

One aspect of the semiconductor device of this embodiment is characterized in that it includes a semiconductor wafer, a sealing material covering the semiconductor wafer, and a rewiring layer having an area larger than the semiconductor wafer in plan view, and 5% of the interlayer insulating film of the rewiring layer. The weight reduction temperature is 300 ° C or lower.

In one aspect of the semiconductor device of the present invention, it is preferred that the sealing material is directly connected to the interlayer insulating film.

In one aspect of the semiconductor device of the present invention, it is preferable that the sealing material includes epoxy resin.

In one aspect of the semiconductor device of the present invention, it is preferable that the interlayer insulating film includes at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

In one aspect of the semiconductor device of the present invention, it is preferable that the interlayer insulating film contains polyimide having a structure of the following general formula (1).

[Chemical 15]

(In the general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more)

In one aspect of the semiconductor device of the present invention, it is preferable that X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the general formula (1) is an aromatic group. Ring divalent organic group.

In one aspect of the semiconductor device of the present invention, it is preferable that X ¹ in the general formula (1) includes at least one structure represented by the following general formula (2) to general formula (4).

[Chemical 16]

[Chemical 17]

[Chemical 18]

(In the general formula (4), R ₉ is an oxygen atom, a sulfur atom, or a divalent organic group)

In one aspect of the semiconductor device of the present invention, it is preferable that X ¹ in the general formula (1) includes a structure represented by the following general formula (5).

[Chemical 19]

In one aspect of the semiconductor device of the present invention, it is preferable that Y ¹ in the general formula (1) includes at least one structure represented by the following general formula (6) to general formula (8).

[Chemical 20]

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group or a hydroxyl group having 1 to 5 carbon atoms, which may be the same or different)
[Chemical 21]

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group or a hydroxyl group having 1 to 5 carbon atoms, and may be different from each other or the same)
[Chemical 22]

(R ₂₂ is a divalent group, R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group or a hydroxyl group having 1 to 5 carbon atoms, which may be the same or different)

In one aspect of the semiconductor device of the present invention, it is preferable that Y ¹ in the general formula (1) includes a structure represented by the following general formula (9).

[Chemical 23]

In one aspect of the semiconductor device of the present invention, it is preferable that the interlayer insulating film includes polybenzoxazole containing a structure of the following general formula (10).

[Chemical 24]

(In the general formula (10), U and V are divalent organic groups)

In one aspect of the semiconductor device of the present invention, it is preferable that U in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms.

In one aspect of the semiconductor device of the present invention, it is preferable that U of the general formula (10) is a chain-like alkylene group having a carbon number of 1 to 8 and a part or all of a hydrogen atom being substituted with a fluorine atom.

In one aspect of the semiconductor device of the present invention, it is preferable that the V-based general formula (10) is a divalent organic group containing an aromatic group.

In one aspect of the semiconductor device of the present invention, it is preferable that V of the general formula (10) includes at least one structure represented by the following general formula (6) to general formula (8).

[Chemical 25]

_{(R 10, R 11, R} 12 and R ₁₃ is a hydrogen atom, having 1 to 5 carbon atoms of a divalent aliphatic group, may be identical or different)
[Chemical 26]

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, and a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same)
[Chemical 27]

(R ₂₂ is a divalent group, R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different)

In one aspect of the semiconductor device of the present invention, it is preferable that V of the general formula (10) includes a structure represented by the following general formula (9).

[Chemical 28]

In one aspect of the semiconductor device of the present invention, V in the general formula (10) is preferably a divalent organic group having 1 to 40 carbon atoms.

In one aspect of the semiconductor device of the present invention, it is preferable that V in the general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms.

In one aspect of the semiconductor device of the present invention, it is preferable that the polymer having a phenolic hydroxyl group includes a novolac-type phenol resin.

In one aspect of the semiconductor device of the present invention, it is preferable that the polymer having a phenolic hydroxyl group includes a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group.

In one aspect of the semiconductor device of the present invention, it is preferable that when the redistribution layer is sectioned, the redistribution layer includes: a first interlayer insulating film layer; a second interlayer insulating film layer; and an intermediate layer, It is a layer different from the first interlayer insulating film layer and the second interlayer insulating film layer, and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer.

In one aspect of the semiconductor device of the present invention, the first interlayer insulating film layer is preferably connected to the sealing material, and a 5% weight reduction temperature of the first interlayer insulating film layer is 300 ° C. or lower.

In one aspect of the semiconductor device of the present invention, it is preferable that the composition of the second interlayer insulating film layer is different from that of the first interlayer insulating film layer.

In one aspect of the semiconductor device of the present invention, the 5% weight reduction temperature of the second interlayer insulating film layer is preferably different from the 5% weight reduction temperature of the first interlayer insulating film layer.

In one aspect of the semiconductor device of the present invention, the above-mentioned semiconductor device is preferably a fan-out type wafer-level wafer-size package-type semiconductor device.

In one aspect of the semiconductor device of the present invention, the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is preferably 280 ° C or lower.

In one aspect of the semiconductor device of the present invention, the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is preferably 260 ° C or lower.

In one aspect of the semiconductor device of the present invention, the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is preferably 240 ° C or lower.

In one aspect of the semiconductor device of the present invention, the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is preferably 220 ° C or lower.

In one aspect of the semiconductor device of the present invention, the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is preferably 200 ° C or lower.

In one aspect of the semiconductor device of the present invention, the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is preferably 80 ° C or higher.

In one aspect of the semiconductor device of the present invention, the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is preferably 100 ° C or higher.

In one aspect of the semiconductor device of the present invention, the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is preferably 150 ° C or higher.

In one aspect of the method for manufacturing a semiconductor device of the present invention, the method includes the steps of covering a semiconductor wafer with a sealing material, and the step of forming a redistribution layer having an area larger than the semiconductor wafer in plan view and including an interlayer insulating film. And the 5% weight reduction temperature of the interlayer insulating film is 300 ° C or lower.

In one aspect of the method for manufacturing a semiconductor device of the present invention, a photosensitive resin composition including at least one compound capable of forming polyfluorene imide, polybenzoxazole, and a polymer having a phenolic hydroxyl group is preferred. The interlayer insulating film forming step of forming the interlayer insulating film.

In one aspect of the method for manufacturing a semiconductor device of the present invention, it is preferable that the step of forming the interlayer insulating film includes using the above-mentioned photosensitivity adjusted by an additive in such a manner that a 5% weight reduction of the interlayer insulating film reduces the temperature to 300 ° C or lower. The step of forming the above-mentioned interlayer insulating film by the resin composition.

One aspect of the semiconductor device of the present invention is characterized in that it includes a semiconductor wafer, a sealing material covering the semiconductor wafer, and a rewiring layer having an area larger than the semiconductor wafer in a plan view, and an interlayer insulating film having a wavelength of 1310 nm. The absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index did not reach 0.0150.

In one aspect of the semiconductor device of the present invention, it is preferred that the sealing material is directly connected to the interlayer insulating film.

In one aspect of the semiconductor device of the present invention, it is preferable that the sealing material includes epoxy resin.

In one aspect of the semiconductor device of the present invention, it is preferable that the interlayer insulating film includes at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

In one aspect of the semiconductor device of the present invention, it is preferable that the interlayer insulating film contains polyimide having a structure of the following general formula (1).

[Chemical 29]

(In the general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more)

In one aspect of the semiconductor device of the present invention, it is preferable that X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the general formula (1) is an aromatic group. Ring divalent organic group.

In one aspect of the semiconductor device of the present invention, it is preferable that X ¹ in the general formula (1) includes at least one structure represented by the following general formula (2) to general formula (4).

[Chemical 30]

[Chemical 31]

[Chemical 32]

(In the general formula (4), R ₉ is an oxygen atom, a sulfur atom, or a divalent organic group)

In one aspect of the semiconductor device of the present invention, it is preferable that X ¹ in the general formula (1) includes a structure represented by the following general formula (5).

[Chemical 33]

In one aspect of the semiconductor device of the present invention, it is preferable that Y ¹ in the general formula (1) includes at least one structure represented by the following general formula (6) to general formula (8).

[Chem 34]

_{(R 10, R 11, R} 12 and R ₁₃ is a hydrogen atom, having 1 to 5 carbon atoms of a divalent aliphatic group or a hydroxyl group, may be identical or different)
[Chemical 35]

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group or a hydroxyl group having 1 to 5 carbon atoms, and may be different from each other or the same)
[Chemical 36]

(R ₂₂ is a divalent group, R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group or a hydroxyl group having 1 to 5 carbon atoms, which may be the same or different)

In one aspect of the semiconductor device of the present invention, it is preferable that Y ¹ in the general formula (1) includes a structure represented by the following general formula (9).

[Chemical 37]

In one aspect of the semiconductor device of the present invention, it is preferable that the polybenzoxazole includes a polybenzoxazole having a structure of the following general formula (10).

[Chemical 38]

(In the general formula (10), U and V are divalent organic groups)

In one aspect of the semiconductor device of the present invention, it is preferable that U in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms.

In one aspect of the semiconductor device of the present invention, it is preferable that U of the general formula (10) is a chain-like alkylene group having a carbon number of 1 to 8 and a part or all of a hydrogen atom being substituted with a fluorine atom.

In one aspect of the semiconductor device of the present invention, it is preferable that the V-based general formula (10) is a divalent organic group containing an aromatic group.

In one aspect of the semiconductor device of the present invention, it is preferable that the V system of the general formula (10) includes at least one structure represented by the following general formulae (6) to (8).

[Chemical 39]

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are monovalent aliphatic groups having a hydrogen atom and a carbon number of 1 to 5, which may be the same or different)
[Chemical 40]

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, and a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same)
[Chemical 41]

(R ₂₂ is a divalent group, R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different)

In one aspect of the semiconductor device of the present invention, it is preferable that V of the general formula (10) includes a structure represented by the following general formula (9).

[Chemical 42]

In one aspect of the semiconductor device of the present invention, V in the general formula (10) is preferably a divalent organic group having 1 to 40 carbon atoms.

In one aspect of the semiconductor device of the present invention, it is preferable that V in the general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms.

In one aspect of the semiconductor device of the present invention, it is preferable that the polymer having a phenolic hydroxyl group includes a novolac-type phenol resin.

In one aspect of the semiconductor device of the present invention, it is preferable that the polymer having a phenolic hydroxyl group includes a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group.

In one aspect of the semiconductor device of the present invention, it is preferable that when the redistribution layer is sectioned, the redistribution layer includes a first interlayer insulating film layer, a second interlayer insulating film layer, and an intermediate layer, It is a layer different from the first interlayer insulating film layer and the second interlayer insulating film layer, and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer.

In one aspect of the semiconductor device of the present invention, the first interlayer insulating film layer is preferably connected to the sealing material, and the absolute difference between the in-plane refractive index and the out-of-plane refractive index of the first interlayer insulating film layer is preferably The value does not reach 0.0150.

In one aspect of the semiconductor device of the present invention, it is preferable that the composition of the second interlayer insulating film layer is different from that of the first interlayer insulating film layer.

In one aspect of the semiconductor device of the present invention, the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the second interlayer insulating film layer and the in-plane refractive index of the first interlayer insulating film layer are preferable. The absolute value of the difference from the out-of-plane refractive index is different.

In one aspect of the semiconductor device of the present invention, the above-mentioned semiconductor device is preferably a fan-out type wafer-level wafer-size package-type semiconductor device.

In one aspect of the semiconductor device of the present invention, the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is preferably 0.0145 or less.

In one aspect of the semiconductor device of the present invention, the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is preferably 0.0140 or less.

In one aspect of the semiconductor device of the present invention, the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is preferably 0.0135 or less.

In one aspect of the semiconductor device of the present invention, the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is preferably 0.0130 or less.

In one aspect of the semiconductor device of the present invention, the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is preferably 0.0120 or less.

In one aspect of the semiconductor device of the present invention, the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is preferably 0.0005 or more.

In one aspect of the semiconductor device of the present invention, the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is preferably 0.0010 or more.

In one aspect of the semiconductor device of the present invention, the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is preferably 0.0015 or more.

One aspect of the method for manufacturing a semiconductor device according to the present invention is characterized by including a step of covering a semiconductor wafer with a sealing material, and a step of forming a redistribution layer having an area larger than the above-mentioned semiconductor wafer in plan view and including an interlayer insulating film, and The absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film did not reach 0.0150.

In one aspect of the method for manufacturing a semiconductor device of the present invention, a photosensitive resin composition including at least one compound capable of forming polyfluorene imide, polybenzoxazole, and a polymer having a phenolic hydroxyl group is preferred. The interlayer insulating film forming step of forming the interlayer insulating film.

In one aspect of the method for manufacturing a semiconductor device of the present invention, it is preferable that the step of forming the interlayer insulating film includes using the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film to be less than 0.0150 In one aspect, the step of forming the interlayer insulating film by the photosensitive resin composition adjusted by the additive.
[Effect of the invention]

According to the present invention, a semiconductor device having excellent adhesion between an interlayer insulating film and a sealing material in a redistribution layer, and a method for manufacturing the same can be provided.

Hereinafter, an embodiment of the semiconductor device of the present invention (hereinafter abbreviated as "embodiment") will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments, and can be implemented with various changes within the scope of the gist thereof.

(Semiconductor device)
As shown in FIG. 1, a semiconductor device (semiconductor IC) 1 includes a semiconductor wafer 2, a sealing material (molding resin) 3 covering the semiconductor wafer 2, and a redistribution layer 4 in close contact with the semiconductor wafer 2 and the sealing material 3.

As shown in FIG. 1, the sealing material 3 covers the surface of the semiconductor wafer 2 and is formed in a larger area than the area of the semiconductor wafer 2 in a plan view (as viewed along the arrow A).

The rewiring layer 4 includes a plurality of wirings 5 electrically connected to a plurality of terminals 2 a provided on the semiconductor wafer 2, and an interlayer insulating film 6 between the buried wirings 5. The plurality of terminals 2 a provided on the semiconductor wafer 2 are electrically connected to the wiring 5 in the redistribution layer 4. One end of the wiring 5 is connected to the terminal 2 a and the other end is connected to the external connection terminal 7. The wiring 5 between the terminal 2a and the external connection terminal 7 is covered with the interlayer insulating film 6 over the entire surface.

As shown in FIG. 1, the redistribution layer 4 is formed larger than the semiconductor wafer 2 in a plan view (viewed by arrow A). The semiconductor device 1 shown in FIG. 1 is a fan-out type wafer level wafer size package (WLCSP) type semiconductor device. In a fan-out type semiconductor device, the interlayer insulating film 6 in the redistribution layer 4 is not only in close contact with the semiconductor wafer 2, but also in close contact with the sealing material 3. The semiconductor wafer 2 includes a semiconductor such as silicon, and a circuit is formed inside.

(Rewiring layer)
The rewiring layer 4 mainly includes the wiring 5 and an interlayer insulating film 6 covering the periphery of the wiring 5. From the viewpoint of preventing undesired conduction with the wiring 5, the interlayer insulating film 6 is preferably a member having a high insulation property.

Here, the "rewiring layer 4" in this embodiment is a thin film layer having the wiring 5 and the interlayer insulating film 6 as described above, and does not include an interposer or a printed wiring board. Fig. 4 is a comparison diagram between a flip chip BGA and a fan-out WLCSP. Since the semiconductor device (semiconductor IC) 1 (see FIG. 1) uses the redistribution layer 4, as shown in FIG. 4, it is thinner than a semiconductor device using an interposer such as a flip-chip BGA.

In this embodiment, the film thickness of the redistribution layer 4 can be set to about 3 to 30 μm. The film thickness of the redistribution layer 4 may be 1 μm or more, 5 μm or more, or 10 μm or more. The film thickness of the redistribution layer 4 may be 40 μm or less, 30 μm or less, or 20 μm or less.

When the semiconductor device 1 is viewed in plan (viewed by arrow A), it is as shown in FIG. 2 below. FIG. 2 is a schematic plan view of a semiconductor device according to this embodiment. In addition, the sealing material 3 is omitted.

The semiconductor device 1 shown in FIG. 2 is configured such that the area S1 of the redistribution layer 4 is larger than the area S2 of the semiconductor wafer 2. The area S1 of the redistribution layer 4 is not particularly limited. From the viewpoint of increasing the number of external connection terminals, the area S1 of the redistribution layer 4 is preferably 1.05 times or more, more preferably 1.1 times the area S2 of the semiconductor wafer 2 Above, more preferably 1.2 times or more, particularly preferably 1.3 times or more. The upper limit is not particularly limited, and the area S1 of the redistribution layer 4 may be 50 times or less the area S2 of the semiconductor wafer 2, 25 times or less, 10 times or less, and 5 times or less. Furthermore, in FIG. 2, the area of the portion of the redistribution layer 4 covering the semiconductor wafer 2 is also included in the area S1 of the redistribution layer 4.

The outer shapes of the semiconductor wafer 2 and the redistribution layer 4 may be the same or different. In FIG. 2, the outer shapes of the semiconductor wafer 2 and the redistribution layer 4 are similar to rectangular shapes, but the shapes may be other than rectangular shapes.

The redistribution layer 4 may be a single layer or a multilayer of two or more layers. The redistribution layer 4 includes an interlayer insulating film 6 between the wiring 5 and the buried wiring 5. However, the redistribution layer 4 may include a layer composed of only the interlayer insulating film 6 or a layer composed of only the wiring 5.

The wiring 5 is not particularly limited as long as it is a highly conductive member, and copper is generally used.

(Sealing material)
The material of the sealing material 3 is not particularly limited. From the viewpoints of heat resistance and adhesion to the interlayer insulating film, epoxy resin is preferred.

As shown in FIG. 1, the sealing material 3 is preferably in direct contact with the semiconductor wafer 2 and the redistribution layer 4. Thereby, the sealing property from the surface of the semiconductor wafer 2 to the surface of the redistribution layer 4 can be effectively improved.

The sealing material 3 may be a single layer or a structure in which a plurality of layers are laminated. When the sealing material 3 is a laminated structure, it may be a laminated structure of the same material or a laminated structure of different materials.

(Interlayer insulation film)
In the first aspect of the present embodiment, the transmittance of the i-rays (wavelength: 365 nm) of the interlayer insulating film 6 is 80% or less. The transmittance is a value obtained by converting the film thickness of the interlayer insulating film 6 to 10 μm. When the film thickness is not 10 micrometers (it is set to y micrometers), the measured transmittance is {(transmittance / 100) ^{10 / y} } × 100, and the transmittance converted by 10 micrometers is calculated. . If the transmittance of the i-ray (wavelength: 365 nm) of the interlayer insulating film 6 is 80% or less, the reason why the interlayer insulating film 6 in the redistribution layer 4 and the sealing material 3 have excellent adhesion is not yet determined, but the inventors They speculate as follows.

In the process of manufacturing a fan-out type semiconductor device, a photosensitive resin composition is applied to a wafer sealing body including a semiconductor wafer 2 and a sealing material 3 in order to form a redistribution layer 4. Then, the photosensitive resin composition is exposed by i-ray-containing light. Thereafter, the photosensitive resin composition is developed and hardened, thereby selectively forming a portion having a cured material of the photosensitive resin composition and a portion having no cured material of the photosensitive resin composition. The cured product of the photosensitive resin composition becomes the interlayer insulating film 6. In addition, the wiring 5 is formed on a portion of the hardened body of the non-photosensitive resin composition. In general, the redistribution layer 4 is often multilayered. That is, a photosensitive resin composition is further coated on the interlayer insulating film 6 and the wiring 5, and a redistribution layer is further formed on the redistribution layer through the steps of exposure, development, and hardening.

When the exposure is performed in order to form the redistribution layer of the first layer or the exposure is performed in order to form the redistribution layer of the second layer, if the transmittance of the i-ray (wavelength: 365 nm) of the interlayer insulating film is high, it is because The i-ray causes the sealing material 3 to decompose and deteriorate. Therefore, the adhesion between the interlayer insulating film and the sealing material 3 is reduced. In particular, epoxy resin is easily decomposed and deteriorated by i-rays. Therefore, when an epoxy resin is used for the sealing material 3, the epoxy resin is decomposed and deteriorated due to i-rays, and the adhesion between the interlayer insulating film and the sealing material 3 is promoted to decrease.

The interlayer insulating film 6 of this embodiment has an i-ray transmittance with a transmittance of i-rays (wavelength: 365 nm) as low as 80% or less. Therefore, in this embodiment, it is estimated that decomposition and deterioration of the sealing material 3 are difficult to occur due to i-rays, and the adhesion between the interlayer insulating film 6 and the sealing material 3 can be increased. When an interlayer insulating film with high transmittance of i-rays (wavelength: 365 nm) is used, the transmittance of i-rays (wavelength: 365 nm) can be reduced by thickening the interlayer insulating film. However, there is a disadvantage that the entire semiconductor device becomes thicker. The semiconductor device of this embodiment can reduce the transmittance of i-rays (wavelength: 365 nm) without thickening the entire semiconductor device, and has excellent adhesion between the interlayer insulating film and the sealing material in the rewiring layer.

As for the transmittance of the i-ray (wavelength: 365 nm) of the interlayer insulating film 6, from the viewpoint of the adhesion between the interlayer insulating film and the sealing material in the redistribution layer, it is preferably 80% or less, and more preferably 78% or less It is preferably 76% or less, preferably 74% or less, preferably 72% or less, preferably 70% or less, preferably 68% or less, preferably 66% or less, and preferably 64% or less, It is preferably below 62%, preferably below 60%, preferably below 58%, preferably below 56%, preferably below 54%, preferably below 52%, preferably below 50%, It is preferably 48% or lower, preferably 46% or lower, preferably 44% or lower, preferably 42% or lower, preferably 40% or lower, preferably 38% or lower, preferably 36% or lower, preferably 34% or less, preferably 32% or less, preferably 30% or less, preferably 28% or less, preferably 26% or less, preferably 24% or less, preferably 22% or less, and more preferably Below 20%, preferably below 18%, preferably below 16%, preferably below 14%, preferably below 12%.

Furthermore, the transmittance of the i-ray (wavelength: 365 nm) of the interlayer insulating film 6 is preferably 10% or less, preferably 9% or less, preferably 8% or less, preferably 7% or less, and preferably 6 % Or less, preferably 5% or less, preferably 4% or less, preferably 3% or less, and more preferably 2% or less.

The lower limit of the transmittance of the i-rays (wavelength: 365 nm) of the interlayer insulating film 6 is not particularly limited. From the viewpoint of making the pattern shape of the interlayer insulating film 6 good, it is preferably 0.1% or more, more preferably 0.5% or more, preferably 1% or more, preferably 3% or more, preferably 5% or more, preferably 10% or more, preferably 15% or more, preferably 20% or more, and more preferably 25% or more, preferably 30% or more, preferably 35% or more, and more preferably 40% or more.

The interlayer insulating film 6 in the redistribution layer 4 may be a plurality of layers. That is, when the redistribution layer 4 is viewed in cross section, the redistribution layer 4 may include a first interlayer insulating film layer, a second interlayer insulating film layer, and an intermediate layer, which is the same as the first interlayer insulating film layer and the first The two interlayer insulating film layers are different from each other, and are provided between the first interlayer insulating film layer and the second interlayer insulating film layer. The intermediate layer is, for example, the wiring 5.

The first interlayer insulating film layer and the second interlayer insulating film layer may have the same composition or different compositions. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same i-ray transmittance or different i-ray transmittances. The first interlayer insulating film layer and the second interlayer insulating film layer may be the same film thickness or different film thicknesses. If the first interlayer insulating film layer and the second interlayer insulating film layer have different compositions or different i-ray transmittances or different film thicknesses, each interlayer insulating film layer may have different properties, which is preferable.

In the case where the interlayer insulating film 6 is multi-layered, the i-ray transmittance of at least one of the plurality of existing layers may be 80% or less, and the interlayer insulating film layer (first The interlayer insulating film layer) has an i-ray transmittance of 80% or less. If the i-ray transmittance of the interlayer insulating film layer in contact with the sealing material 3 is 80% or less, when forming the interlayer insulating film layer not in contact with the sealing material 3, the i-rays can be efficiently absorbed, and Prevent deterioration of sealing materials. The range of the preferable i-ray transmittance of each interlayer insulating film layer is the same as the range of the preferable i-ray transmittance of the interlayer insulating film 6.

In the second aspect of this implementation, the 5% weight reduction temperature of the interlayer insulating film 6 is 300 ° C or lower. Hereinafter, the "5% weight reduction temperature" is simply referred to as "weight reduction temperature". When the weight reduction temperature is 300 ° C. or lower, the adhesion between the interlayer insulating film 6 and the sealing material 3 during high-temperature processing is excellent. The reason for this is uncertain, but the present inventors and others speculated as follows.

In the manufacturing process of the fan-out type semiconductor device 1 (see FIG. 1), a photosensitive resin composition is applied to a wafer sealing body including the semiconductor wafer 2 and the sealing material 3 in order to form a redistribution layer 4. Then, the photosensitive resin composition is exposed by i-ray-containing light. Thereafter, the photosensitive resin composition is developed and hardened, thereby selectively forming a portion having a cured material of the photosensitive resin composition and a portion having no cured material of the photosensitive resin composition. The cured product of the photosensitive resin composition becomes the interlayer insulating film 6. The wiring 5 is formed on a portion where the cured product of the photosensitive resin composition is not present. In general, the redistribution layer 4 is often multilayered. That is, a photosensitive resin composition is further applied to the interlayer insulating film 6 and the wiring 5, and exposed, developed, and cured.

However, the step of forming the interlayer insulating film 6 and the wiring 5 may include a reflow step depending on the manufacturing method. If the sealing material 3 is heated for a long period of time, there is a possibility that a gas is generated from the sealing material 3. When the density of the interlayer insulating film 6 is high, that is, the weight reduction temperature of the interlayer insulating film 6 is high, it is difficult for the gas generated from the sealing material 3 to escape to the outside. Therefore, gas is accumulated at the interface between the sealing material 3 and the interlayer insulating film 6, and the sealing material 3 and the interlayer insulating film 6 are easily separated. In particular, epoxy resin is liable to generate gas. Therefore, when an epoxy resin is used for the sealing material 3, the adhesion between the interlayer insulating film 6 and the sealing material 3 is reduced.

The weight reduction temperature of the interlayer insulating film 6 in this embodiment is as low as 300 ° C or lower. Therefore, in this embodiment, it is estimated that gas escapes easily from the interlayer insulating film, and even under conditions where gas is easily generated from the sealing material 3, the interlayer insulating film 6 and the sealing material 3 have less peeling, and are tightly adhered during high temperature processing Sex is higher.

As for the temperature at which the weight of the interlayer insulating film 6 decreases, from the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3 after high temperature treatment, it is preferably 300 ° C or lower, preferably 295 ° C or lower, and preferably 290 ° C or lower. , Preferably 285 ° C or lower, preferably 280 ° C or lower, preferably 275 ° C or lower, preferably 270 ° C or lower, preferably 260 ° C or lower, preferably 250 ° C or lower, preferably 240 ° C or lower, The temperature is preferably 230 ° C or lower.

The lower limit of the weight reduction temperature of the interlayer insulating film 6 is not particularly limited, and may be 80 ° C. or higher, 100 ° C. or higher, 120 ° C. or higher, or 150 ° C. or higher.

The interlayer insulating film 6 in the redistribution layer 4 may be a plurality of layers. That is, when the redistribution layer 4 is viewed in cross section, the redistribution layer 4 may include: a first interlayer insulating film layer; a second interlayer insulating film layer; and an intermediate layer, which is the same as the first interlayer insulating film layer and the above. The second interlayer insulating film layer is different from each other and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer. The intermediate layer is, for example, the wiring 5.

The first interlayer insulating film layer and the second interlayer insulating film layer may have the same composition or different compositions. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same weight reduction temperature, or may have different weight reduction temperatures. The first interlayer insulating film layer and the second interlayer insulating film layer may be the same film thickness or different film thicknesses. If the first interlayer insulating film layer and the second interlayer insulating film layer have different compositions or different weight reduction temperatures or different film thicknesses, each interlayer insulating film layer may have different properties, which is preferable.

In the case where the interlayer insulating film 6 is multi-layered, the weight reduction temperature of the interlayer insulating film 6 in at least one of the plurality of layers may be 300 ° C. or lower. However, since the sealing material 3 and the interlayer insulating film layer become easily peeled by the gas, it is preferable that the weight reduction temperature of the interlayer insulating film 6 of the interlayer insulating film layer in contact with the sealing material 3 is 300 ° C. or lower. If the weight reduction temperature of the interlayer insulating film 6 of the interlayer insulating film layer in contact with the sealing material 3 is 300 ° C. or lower, the efficiency generated in the sealing material 3 can be escaped well. The preferred weight reduction temperature of each interlayer insulating film layer is the same as the preferred weight reduction temperature of the interlayer insulating film 6.

In the third aspect of the present embodiment, it is characterized in that the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film 6 does not reach 0.0150. Here, the in-plane refractive index refers to an average value of the refractive index of the wavelength 1310 nm in the x-direction and the y-direction of the interlayer insulating film 6 of the thickness z, the width x, and the length y. The so-called out-of-plane refractive index is a refractive index of a wavelength of 1310 nm in the z-direction. Hereinafter, the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index at a wavelength of 1310 nm will be referred to as the refractive index difference.

Furthermore, the so-called width x direction of the interlayer insulating film 6 is a plane direction of the interlayer insulating film 6 in FIG. 2, and the so-called length y direction is a plane direction of the interlayer insulating film 6 in FIG. 2 and a direction perpendicular to the width x direction. The thickness z direction is a direction perpendicular to the width x direction and the length y direction.

When the refractive index difference is less than 0.0150, the adhesion between the interlayer insulating film 6 and the sealing material 3 during high-temperature processing is excellent. The reason for this is uncertain, but the present inventors and others speculated as follows.

In the manufacturing process of the fan-out type semiconductor device 1 (see FIG. 1), a photosensitive resin composition is applied to a wafer sealing body including the semiconductor wafer 2 and the sealing material 3 in order to form the redistribution layer 4. Then, the photosensitive resin composition is exposed by i-ray-containing light. Thereafter, the photosensitive resin composition is developed and hardened, thereby selectively forming a portion having a cured material of the photosensitive resin composition and a portion having no cured material of the photosensitive resin composition. The cured product of the photosensitive resin composition becomes the interlayer insulating film 6. The wiring 5 is formed on a portion where the cured product of the photosensitive resin composition is not present. In general, the redistribution layer 4 is often multilayered. That is, a photosensitive resin composition is further applied to the interlayer insulating film 6 and the wiring 5 to perform exposure, development, and curing.

However, the step of forming the interlayer insulating film 6 and the wiring 5 may include a reflow step depending on the manufacturing method. In the reflow step, if heat is applied to the sealing material for a long time, there is a possibility that gas may be generated from the sealing material. When the interlayer insulating film 6 is neatly aligned and stacked in the in-plane direction, that is, when the refractive index difference is large, the gas generated from the sealing material cannot pass through the interlayer insulating film 6 and is difficult to escape to the outside. Therefore, gas is accumulated at the interface between the sealing material 3 and the interlayer insulating film 6, and the sealing material 3 and the interlayer insulating film 6 are easily separated. In particular, epoxy resin is liable to generate gas due to a high-temperature thermal history. Therefore, when an epoxy resin is used for the sealing material 3, the adhesion between the interlayer insulating film 6 and the sealing material 3 is reduced.

The refractive index difference of the interlayer insulating film 6 in this embodiment mode is as small as less than 0.0150, and the randomness of the molecular chain of the interlayer insulating film 6 is high. Therefore, in this embodiment, it is estimated that even under the condition that gas easily escapes from the interlayer insulating film and gas is easily generated from the sealing material 3, the interlayer insulating film 6 and the sealing material 3 have less peeling and higher adhesion.

As for the refractive index difference of the interlayer insulating film 6, from the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3 after high temperature treatment, it is preferably less than 0.0150, more preferably 0.0145 or less, and preferably 0.0140 or less. Preferably it is below 0.0135, preferably below 0.0130, preferably below 0.0125, preferably below 0.0120, preferably below 0.0115, preferably below 0.0110, preferably below 0.0095, preferably below 0.0090, preferably below 0.0085 or less, preferably 0.0080 or less, preferably 0.0075 or less, preferably 0.0070 or less, preferably 0.0065 or less, preferably 0.0060 or less, preferably 0.0055 or less, preferably 0.0050 or less, and preferably 0.0045 or less It is preferably 0.0040 or less, preferably 0.0035 or less, preferably 0.0030 or less, preferably 0.0025 or less, preferably 0.0020 or less, and preferably 0.0010 or less.

The lower limit of the refractive index difference of the interlayer insulating film 6 is not particularly limited, and may be 0.0000 or more, 0.0005 or more, 0.0010 or more, or 0.0015 or more.

The interlayer insulating film 6 in the redistribution layer 4 may be a plurality of layers. That is, when the redistribution layer 4 is viewed in cross section, the redistribution layer 4 may include: a first interlayer insulating film layer; a second interlayer insulating film layer; and an intermediate layer, which is the same as the first interlayer insulating film layer and the above. The second interlayer insulating film layer is different from each other and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer. The intermediate layer is, for example, the wiring 5.

The first interlayer insulating film layer and the second interlayer insulating film layer may have the same composition or different compositions. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same refractive index difference or different refractive index differences. The first interlayer insulating film layer and the second interlayer insulating film layer may be the same film thickness or different film thicknesses. If the first interlayer insulating film layer and the second interlayer insulating film layer have different compositions or different refractive index differences or different film thicknesses, each interlayer insulating film layer can be made to have different properties, which is preferable.

In the case where the interlayer insulating film 6 is multi-layer, if the refractive index difference of at least one of the interlayer insulating films 6 in the plurality of layers does not reach 0.0150, the sealing material 3 and the interlayer insulating film layer are likely to be caused by gas. It is preferable that the refractive index difference of the interlayer insulating film 6 of the interlayer insulating film layer in contact with the sealing material 3 does not reach 0.0150. If the refractive index difference of the interlayer insulating film 6 of the interlayer insulating film layer in contact with the sealing material 3 is less than 0.0150, the gas generated in the sealing material 3 can be efficiently escaped.

The preferable refractive index difference of each interlayer insulating film layer is the same as the preferable refractive index difference of the interlayer insulating film 6.

(Composition of interlayer insulation film)
The composition of the interlayer insulating film 6 is not particularly limited. For example, a film containing at least one compound selected from the group consisting of polyimide, polybenzoxazole, or a polymer having a phenolic hydroxyl group is preferred.

(Resin composition forming an interlayer insulating film)
The resin composition used in the formation of the interlayer insulating film 6 is not particularly limited as long as it is a photosensitive resin composition, and preferably contains a resin selected from a polyimide precursor, a polybenzoxazole precursor, or A photosensitive resin composition of at least one compound of a phenolic hydroxyl polymer. The resin composition used in the formation of the interlayer insulating film 6 may be liquid or film-like. The resin composition used in the formation of the interlayer insulating film 6 may be a negative photosensitive resin composition or a positive photosensitive resin composition.

In this embodiment, a pattern after the photosensitive resin composition is exposed and developed is referred to as a relief pattern, and a pattern obtained by heating and curing the relief pattern is referred to as a cured relief pattern. This hardened relief pattern becomes the interlayer insulating film 6.

<Polyimide precursor composition>
(A) Photosensitive resin As a photosensitive resin used in a polyimide precursor composition, polyamine, a polyamidate, etc. are mentioned. For example, as a polyamidate, the polyamidate containing the repeating unit represented by following General formula (11) can be used.

[Chemical 43]

R ¹ and R ² are each independently a hydrogen atom, saturated carbon atoms aliphatic group of 1 to 30, an aromatic group having a carbon - carbon double bond in an unsaturated monovalent organic group one, or having a carbon - carbon unsaturated double bond One valent ion. X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more. m is preferably 2 or more, and more preferably 5 or more.

In the above general formula (11) of R ¹ and R ² as a divalent cation is present, O negatively charged (as -O ^- exist). X ¹ and Y ¹ may contain a hydroxyl group.

R ¹ and R ² in the general formula (11) are more preferably a terminal monovalent organic group represented by the following general formula (12) or a monovalent organic group represented by the following general formula (13) having ammonium The structure of ions.

[Chemical 44]

(In the general formula (12), R ₃ , R ₄ and R ₅ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₁ is an integer of 1 to 20)

[Chemical 45]

(In the general formula (13), R ₆ , R _7, and R ₈ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₂ is an integer of 1 to 20).

A plurality of polyamidates represented by the general formula (11) may be mixed. In addition, a polyamidate obtained by copolymerizing polyamidates represented by the general formula (11) with each other can also be used.

X ¹ is not particularly limited. From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3, X ^{1 is} preferably a tetravalent organic group containing an aromatic group. Specifically, X ¹ is preferably the following general formula (2) to Formula (4) represents a tetravalent organic group is at least one kind of structure.

[Chemical 46]

[Chemical 47]

[Chemical 48]

(In the general formula (4), R ₉ is any one of an oxygen atom, a sulfur atom, and a divalent organic group)

R ₉ in the general formula (4) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom. R ₉ may also contain a hydroxyl group.

From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3, X ^{1 is} particularly preferably a tetravalent organic group including a structure represented by the following general formula (5).

[Chemical 49]

Y ¹ is not particularly limited. From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3, Y ^{1 is} preferably a divalent organic group containing an aromatic group. Specifically, Y ^{1 is} preferably a divalent organic group containing at least one structure represented by the following general formula (6) to general formula (8).

[Chemical 50]

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are monovalent aliphatic groups having a hydrogen atom and a carbon number of 1 to 5, which may be the same or different)

[Chemical 51]

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, and a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same)

[Chemical 52]

(R ₂₂ is a divalent organic group, R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different)

R ₂₂ in the general formula (8) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, Y ^{1 is} particularly preferably a divalent organic group including a structure represented by the following general formula (9).

[Chem 53]

In the foregoing polyamic acid ester, X ¹ in the repeating unit is derived from a tetracarboxylic dianhydride used as a raw material, and Y ^{1 is} derived from a diamine used as a raw material.

Examples of the tetracarboxylic dianhydride used as a raw material include pyromellitic dianhydride, diphenyl ether-3,3 ', 4,4'-tetracarboxylic dianhydride, and benzophenone-3,3'. 4,4'-tetracarboxylic dianhydride, biphenyl-3,3 ', 4,4'-tetracarboxylic dianhydride, diphenylhydrazone-3,3', 4,4'-tetracarboxylic dianhydride, Diphenylmethane-3,3 ', 4,4'-tetracarboxylic dianhydride, 2,2-bis (3,4-phthalic anhydride) propane, 2,2-bis (3,4-orthophthalic anhydride) Phthalic anhydride) -1,1,1,3,3,3-hexafluoropropane and the like, but it is not limited to these. These may be used alone or in combination of two or more.

Examples of the diamine used as a raw material include p-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, and 3,3'-diamine. Amino diphenyl ether, 4,4'-diamino diphenyl sulfide, 3,4'-diamino diphenyl sulfide, 3,3'-diamino diphenyl sulfide, 4,4'- Diaminodiphenylphosphonium, 3,4'-diaminodiphenylphosphonium, 3,3'-diaminodiphenylphosphonium, 4,4'-diaminobiphenyl, 3,4'- Diaminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diamine Benzophenone, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, bis [4- (4- Aminophenoxy) phenyl] fluorene, bis [4- (3-aminophenoxy) phenyl] fluorene, 4,4-bis (4-aminophenoxy) biphenyl, 4,4- Bis (3-aminophenoxy) biphenyl, bis [4- (4-aminophenoxy) phenyl] ether, bis [4- (3-aminophenoxy) phenyl] ether, 1 , 4-bis (4-aminophenyl) benzene, 1,3-bis (4-aminophenyl) benzene, 9,10-bis (4-aminophenyl) anthracene, 2,2-bis ( 4-amine Phenyl) propane, 2,2-bis (4-aminophenyl) hexafluoropropane, 2,2-bis [4- (4-aminophenoxy) phenyl) propane, 2,2-bis [ 4- (4-Aminophenoxy) phenyl) hexafluoropropane, 1,4-bis (3-aminopropyldimethylsilyl) benzene, o-toluidine, 9,9-bis ( 4-aminophenyl) fluorene and the like. Moreover, a part of the hydrogen atom on these benzene rings may be substituted. These may be used alone or in combination of two or more.

In the synthesis of the polyamic acid ester (A), a tetracarboxylic acid diester obtained by performing an esterification reaction of a tetracarboxylic dianhydride described later is usually preferably used to directly impart a tetracarboxylic acid diester to a condensation reaction with a diamine. method.

The alcohol used in the esterification reaction of the tetracarboxylic dianhydride is an alcohol having an olefinic double bond. Specific examples include, but are not limited to, 2-hydroxyethyl methacrylate, 2-methacryloxyethanol, glycerol diacrylate, and glycerol dimethacrylate. These alcohols can be used alone or in combination of two or more.

As a specific synthetic method of the polyamidate (A) used in this embodiment, a conventionally known method can be adopted. As a synthesis method, the method shown in the specification of international publication 00/43439 is mentioned, for example. That is, the tetracarboxylic acid diester can be converted into the tetracarboxylic acid diester difluoride chloride once, and the tetracarboxylic acid diester difluoride chloride and the diamine can be imparted to a condensation reaction in the presence of a basic compound. Method for producing polyurethane (A). Further, a method for producing a polyamidate (A) by a method of imparting a tetracarboxylic diester and a diamine to a condensation reaction in the presence of an organic dehydrating agent can be mentioned.

Examples of the organic dehydrating agent include dicyclohexylcarbodiimide (DCC), diethylcarbodiimide, diisopropylcarbodiimide, ethylcyclohexylcarbodiimide, Diphenylcarbodiimide, 1-ethyl-3- (3-dimethylaminopropyl) carbodiimide, 1-cyclohexyl-3- (3-dimethylaminopropyl ) Carbodiimide hydrochloride and the like.

The weight average molecular weight of the polyamidate (A) used in this embodiment is preferably 6000 to 150,000, more preferably 7,000 to 50,000, and even more preferably 7,000 to 20,000.

(B1) Photoinitiator When the resin composition used in the formation of the interlayer insulating film 6 is a negative photosensitive resin, a photoinitiator is added. As the photoinitiator, for example, benzophenone, methyl o-benzoyl benzoate, 4-benzyl-4'-methyldiphenyl ketone, dibenzyl ketone, and fluorenone are used. Benzophenone derivatives, 2,2'-diethoxyacetophenone, and 2-acetophenone derivatives such as 2-hydroxy-2-methylphenylacetone, 1-hydroxycyclohexylphenyl ketone, 9-oxysulfur 2-methyl-9-oxysulfur , 2-isopropyl-9-oxysulfur And diethyl-9-oxysulfur 9-oxysulfur Derivatives, Benzophenone, Benzophenone dimethyl ketal and Benzophenone derivatives such as Benzophenone-β-methoxyethyl acetal, Benzoin derivatives such as Benzomethyl ether, 2,6-Di (4'-Diazidebenzylidene) -4-methylcyclohexanone, and 2,6'-bis (4'-diazidebenzylidene) cyclohexanone and other azides, 1- Phenyl-1,2-butanedione-2- (O-methoxycarbonyl) oxime, 1-phenylpropiondione-2- (O-methoxycarbonyl) oxime, 1-phenylpropiondione 2- (O-ethoxycarbonyl) oxime, 1-phenylpropanedione-2- (O-benzylidene) oxime, 1,3-diphenylglycerone-2- (O-ethyl Oxycarbonyl) oximes, 1-phenyl-3-ethoxyglycerone-2- (O-benzylidene) oximes and other oximes, N-phenylglycine and other N-arylglycines , Peroxides such as benzamidine peroxide, aromatic biimidazoles, and titanocene. Among these, the above-mentioned oxime is preferable in terms of light sensitivity.

The addition amount of these photo-initiators is preferably 1 to 40 parts by mass, and more preferably 2 to 20 parts by mass, based on 100 parts by mass of the polyamidate (A). By adding 1 part by mass or more of a photoinitiator to 100 parts by mass of the polyurethane (A), the photosensitivity is excellent. In addition, by adding 40 parts by mass or less, the thick film hardenability is excellent.

(B2) Photoacid generator When a resin composition used in the formation of the interlayer insulating film 6 is a positive photosensitive resin, a photoacid generator is added. By containing a photoacid generator, an acid is generated in an ultraviolet exposure part, and the solubility of an exposure part with respect to an alkaline aqueous solution increases. Thereby, it can be used as a positive-type photosensitive resin composition.

Examples of the photoacid generator include quinonediazide compounds, sulfonium salts, sulfonium salts, diazonium salts, and sulfonium salts. Among them, a quinonediazide compound can be preferably used from the viewpoint of exhibiting an excellent dissolution-inhibiting effect and obtaining a high-sensitivity positive-type photosensitive resin composition. Moreover, you may contain two or more types of photo-acid generators.

(C) Additive The i-ray transmittance of the interlayer insulating film in the first aspect of this implementation can be adjusted by the amount of the additive. As an additive that reduces the i-ray transmittance, for example, 2- (5-chloro-2H-benzotriazol-2-yl) -6-tert-butyl-4-methylphenol, 2,4,6 can be used. -Tris (2-hydroxy-4-hexyloxy-3-methylphenyl) -1,3,5-tris.

In the second aspect of the present embodiment, the weight reduction temperature of the interlayer insulating film 6 can be adjusted by the type or amount of the additive. By using an easily volatile additive, the density of the interlayer insulating film can be reduced, and the weight reduction temperature can be reduced. As an additive which reduces the weight reduction temperature, polyethylene glycol, polypropylene glycol, etc. can be used, for example. The amount of the additive can be appropriately adjusted according to the target weight reduction temperature. In addition, the temperature for reducing the weight of the interlayer insulating film 6 can be lowered by lowering the temperature of the thermal curing of the relief pattern.

In the third aspect of this implementation, the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film 6 can be adjusted by the type or amount of the additive. If an additive having a fluffy structure is used, the additive enters between the polymer molecular chains, and the arrangement of the polymer molecular chains is disordered. Due to the disordered arrangement of the polymer molecular chains, the intermolecular forces between the polymer molecular chains are reduced, and the molecular chains become easily arranged in an in-plane direction and an out-of-plane direction. The difference becomes smaller. Examples of the additive having a fluffy structure include an additive having a bicyclic structure. As an additive for reducing the refractive index difference, for example, bicyclooctane and adamantane can be used. The amount of the additives may be appropriately adjusted according to the difference between the target in-plane refractive index and the out-of-plane refractive index. In addition, the difference between the in-plane refractive index and the out-of-plane refractive index can be reduced by changing the temperature during thermal curing of the relief pattern.

(D) The solvent is not particularly limited as long as it is a solvent capable of dissolving or dispersing each component. Examples include N-methyl-2-pyrrolidone, γ-butyrolactone, acetone, methyl ethyl ketone, and dimethylsulfinium. These solvents can be used in the range of 30 to 1500 parts by mass based on 100 parts by mass of the (A) photosensitive resin depending on the thickness and viscosity of the coating film.

(E) Other polyimide precursor compositions may contain a crosslinking agent. As the cross-linking agent, it can be used for exposing and developing the polyimide precursor composition, and then heat-curing (A) the photosensitive resin, or the cross-linking agent itself can form a cross-linked material. Of crosslinking agent. By using a cross-linking agent, the heat resistance and chemical resistance of the cured film (interlayer insulating film) can be further enhanced.

In addition, it may include a sensitizer for improving light sensitivity, a bonding aid for improving adhesion to a substrate, and the like.

(development)
After exposing the polyfluorene imide precursor composition, the unnecessary portion is rinsed with a developing solution. The developer used is not particularly limited. In the case of a polyimide precursor composition developed by a solvent, N, N-dimethylformamide, dimethylimide, Good solvents such as N, N-dimethylacetamide, N-methyl-2-pyrrolidone, cyclopentanone, γ-butyrolactone, acetate, etc. These good solvents are related to lower alcohol, water, aromatic A mixed solvent of poor solvents such as hydrocarbons. After development, if necessary, rinse with a poor solvent or the like.

In the case of a polyimide precursor composition developed with an alkaline aqueous solution, an aqueous solution of tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, and potassium hydroxide are preferred. , Sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclic An aqueous solution of a compound showing basicity such as hexylamine, ethylenediamine, hexamethylenediamine, and the like.

(Heat hardened)
By heating the polyimide precursor composition after development and exposure, the polyimide precursor is closed to form a polyimide. This polyimide becomes a hardened relief pattern, that is, an interlayer insulating film 6.

In the first aspect and the second aspect of the present implementation, the heating temperature is not particularly limited. From the viewpoint of influence on other members, the heating temperature is preferably a lower temperature. The temperature is preferably 250 ° C or lower, more preferably 230 ° C or lower, even more preferably 200 ° C or lower, even more preferably 180 ° C or lower.

In the third aspect of the present embodiment, the heating temperature for thermally curing the polyimide precursor composition is not particularly limited. In general, there is a tendency that the lower the thermal curing temperature, the more the refractive index difference becomes. small. From the viewpoint of showing the refractive index difference of this embodiment, that is, less than 0.0150, the heating temperature is preferably 200 ° C or lower, preferably 180 ° C or lower, and more preferably 160 ° C or lower.

＜ Polyimide ＞
The structure of the hardened relief pattern formed from the polyfluorene imide precursor composition has the following general formula (1).

[Chemical 54]

Formula (1) in the ^X-1, Y ^1, m in the general formula (11) in the X ^1, Y ^1, the same m, X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, m is 1 The integer above. Preferred X ¹ , Y ¹ , and m in the general formula (11) are also preferable in the polyfluorene imine of the general formula (1) for the same reason.

In the case of an alkali-soluble polyimide, the terminal of the polyimide may be a hydroxyl group.

<Polybenzoxazole precursor composition>
(A) Photosensitive resin As the photosensitive resin used in the polybenzoxazole precursor composition, poly (o-hydroxyamidoamine) containing a repeating unit represented by the following general formula (14) can be used.

[Chem 55]

(In the general formula (14), U and V are divalent organic groups)

From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3, U is preferably a divalent organic group having 1 to 30 carbon atoms, and more preferably a chain-like alkylene group having 1 to 15 carbon atoms (wherein The hydrogen atom of the alkylene group may also be substituted by a halogen atom), particularly preferably a chain-like alkylene group having 1 to 8 carbon atoms and a hydrogen atom substituted with a fluorine atom.

Further, from the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3, V is preferably a divalent organic group containing an aromatic group, and more preferably includes those represented by the following general formulae (6) to (8). Divalent organic group of at least one structure.

[Chemical 56]

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are monovalent aliphatic groups having a hydrogen atom and a carbon number of 1 to 5, which may be the same or different)

[Chemical 57]

(R ₁₄ ~ R ₂₁ is a hydrogen atom, a halogen atom, having 1 to 5 carbon atoms of the monovalent organic group, may be different from each other, also the same)

[Chem 58]

(R ₂₂ is a divalent organic group, R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different)

R ₂₂ in the general formula (8) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3, V is particularly preferably a divalent organic group including a structure represented by the following general formula (9).

[Chemical 59]

From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3, V is preferably a divalent organic group having 1 to 40 carbon atoms, more preferably a divalent chain aliphatic group having 1 to 40 carbon atoms, and particularly preferably It is a divalent chain aliphatic group having 1 to 20 carbon atoms.

Polybenzoxazole precursors are generally synthesized from dicarboxylic acid derivatives and hydroxyl-containing diamines. Specifically, it can be synthesized by converting a dicarboxylic acid derivative into a dihalide derivative and then performing a reaction with a diamine. The dihalide derivative is preferably a dichloride derivative.

A dichloride derivative can be synthesized by allowing a halogenating agent to work with a dicarboxylic acid derivative. As the halogenating agent, thionyl chloride, phosphorous chloride, phosphorous chloride, phosphorus pentachloride, etc., which are used in the ordinary chlorination reaction of carboxylic acids, can be used.

As a method for synthesizing a dichloride derivative, it can be synthesized by a method in which a dicarboxylic acid derivative and the above-mentioned halogenating agent are reacted in a solvent. After the reaction is performed in the excess halogenating agent, the excess component is distilled off Methods, etc.

Examples of the dicarboxylic acid used in the dicarboxylic acid derivative include isophthalic acid, terephthalic acid, 2,2-bis (4-carboxyphenyl) -1,1,1,3,3, 3-hexafluoropropane, 4,4'-dicarboxybiphenyl, 4,4'-dicarboxydiphenyl ether, 4,4'-dicarboxytetraphenylsilane, bis (4-carboxyphenyl) fluorene, 2 , 2-bis (p-carboxyphenyl) propane, 5-tert-butylisophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6 -Naphthalenedicarboxylic acid, malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n-butylmalonic acid, succinic acid, tetrafluorosuccinic acid, methylsuccinic acid , 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, hexafluoroglutaric acid, 2-methylglutaric acid, 3-methyl Glutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl-3-methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipate, octafluoroadipate, pimelic acid, 2,2,6,6-tetramethylpimelate, suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid Acid, hexafluorosebacate, 1,9-nonanedicarboxylic acid, dodecanedioic acid Acids, tridecane diacid, tetradecanedioic acid, pentadecanoic acid, hexadecanedioic acid, heptadecanedioic acid, octadecenedioic acid, nonadecanedioic acid, eicosenedioic acid, Docosaenedioic acid, behenedioic acid, behenedioic acid, behenedenedioic acid, pentadecanedioic acid, hexadecanedioic acid, heptadecanedioic acid, two Octadecanedioic acid, nonacosenedioic acid, triosenedioic acid, tricosenedioic acid, dodecanedioic acid, diethylene glycol acid, and the like. These can also be used in combination.

Examples of the hydroxyl-containing diamine include 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, and bis ( 3-amino-4-hydroxyphenyl) propane, bis (4-amino-3-hydroxyphenyl) propane, bis (3-amino-4-hydroxyphenyl) fluorene, bis (4-amino- 3-hydroxyphenyl) fluorene, 2,2-bis (3-amino-4-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 2,2-bis (4- Amino-3-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane and the like. These can also be used in combination.

(B2) Photoacid generator The photoacid generator has the function of increasing the solubility of the alkaline aqueous solution in a light irradiation part. Examples of the photoacid generator include a diazonaphthoquinone compound, an aryldiazonium salt, a diarylsulfonium salt, and a triarylsulfonium salt. Among them, the diazonaphthoquinone compound has high sensitivity and is preferred.

(C) Additives The types or amounts of the preferred additives are the same as those described in the item of the polyimide precursor composition.

(D) The solvent is not particularly limited as long as it is a solvent capable of dissolving or dispersing each component.

(E) The other polybenzoxazole precursor composition may include a cross-linking agent, a sensitizer, an adhesion promoter, a thermal acid generator, and the like.

(development)
After exposing the polybenzoxazole precursor composition, the useless portion is washed with a developing solution. The developer used is not particularly limited, and examples thereof include bases such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide. An aqueous solution is preferred.

In the above description, the positive type polybenzoxazole precursor composition is mainly described, but it may also be a negative type polybenzoxazole precursor composition.

(Heat hardened)
After the development, the polybenzoxazole precursor composition is heated, thereby closing the polybenzoxazole precursor and forming a polybenzoxazole. This polybenzoxazole is a hardened relief pattern, that is, an interlayer insulating film 6.

The heating temperature for thermally hardening the polybenzoxazole precursor composition is not particularly limited. From the viewpoint of influence on other members, the heating temperature is preferably a lower temperature. The heating temperature is preferably 250 ° C or lower, more preferably 230 ° C or lower, even more preferably 200 ° C or lower, even more preferably 180 ° C or lower.

<Polybenzoxazole>
The structure of the hardened relief pattern formed from the polybenzoxazole precursor composition described above becomes the following general formula (10).

[Chemical 60]

U and V in the general formula (10) are the same as U and V in the general formula (14). Preferred U and V in the general formula (14) are also preferred in the polybenzoxazole of the general formula (10) for the same reason.

＜ Polyphenolic hydroxyl-containing polymer ＞
(A) A photosensitive resin having a phenolic hydroxyl group in a molecule is soluble in an alkali. Specific examples thereof include vinyl polymers containing monomer units having a phenolic hydroxyl group, such as poly (hydroxystyrene), phenol resins, poly (hydroxyamidamine), poly (hydroxyphenylene) ether, and polynaphthol.

Among these, a phenol resin is preferable from the viewpoint of low cost or small volume shrinkage upon hardening, and a novolak phenol resin is particularly preferred.

Phenol resin is a polycondensation product of phenol or its derivatives and aldehydes. The polycondensation is carried out in the presence of a catalyst such as an acid or a base. The phenol resin obtained when an acid catalyst is used is especially called a novolak-type phenol resin.

Examples of the phenol derivative include phenol, cresol, ethylphenol, propylphenol, butylphenol, pentylphenol, benzylphenol, adamantylphenol, benzyloxyphenol, xylenol, catechol, and m-benzene Diphenol, ethyl resorcinol, hexyl resorcinol, hydroquinone, pyrogallol, resorcinol, 1,2,4-trihydroxybenzene, rosic acid, biphenol, Bisphenol A, Bisphenol AF, Bisphenol B, Bisphenol F, Bisphenol S, Dihydroxydiphenylmethane, 1,1-bis (4-hydroxyphenyl) cyclohexane, 1,4-bis (3 -Hydroxyphenoxybenzene), 2,2-bis (4-hydroxy-3-methylphenyl) propane, α, α'-bis (4-hydroxyphenyl) -1,4-diisopropylbenzene , 9,9-bis (4-hydroxy-3-methylphenyl) fluorene, 2,2-bis (3-cyclohexyl-4-hydroxyphenyl) propane, 2,2-bis (2-hydroxy-5 -Biphenyl) propane, dihydroxybenzoic acid and the like.

Examples of the aldehyde compound include formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, pivalaldehyde, butyraldehyde, valeraldehyde, hexanal, trioxane, glyoxal, cyclohexylaldehyde, diphenylacetaldehyde, and ethylbutane. Aldehyde, benzaldehyde, glyoxylic acid, 5-norene-2-carboxyaldehyde, malonaldehyde, succinaldehyde, glutaraldehyde, salicylaldehyde, naphthaldehyde, terephthalaldehyde, etc.

The component (A) preferably contains (a) a phenol resin having no unsaturated hydrocarbon group and (b) a modified phenol resin having an unsaturated hydrocarbon group. The component (b) is more preferably one which is further modified by a reaction between a phenolic hydroxyl group and a polybasic acid anhydride.

In addition, as the component (b), from the viewpoint of further improving the mechanical properties (elongation at break, elastic modulus, and residual stress), it is preferred to use a compound modified by using a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms. Sexual phenol resin.

(b) Modified phenol resins with unsaturated hydrocarbon groups are generally phenol or its derivatives and compounds with unsaturated hydrocarbon groups (preferably those having 4 to 100 carbon atoms) (hereinafter referred to as "compounds containing unsaturated hydrocarbon groups" "), A polycondensation product of a reaction product (hereinafter referred to as" unsaturated hydrocarbon-modified phenol derivative ") and an aldehyde, or a reaction product of a phenol resin and a compound containing an unsaturated hydrocarbon group.

As the phenol derivative, the same phenol derivative as the raw material of the phenol resin as the component (A) can be used.

From the viewpoint of the adhesion of the resist pattern and the thermal shock resistance, it is preferred that the unsaturated hydrocarbon group of the compound containing an unsaturated hydrocarbon group contains two or more unsaturated groups. From the viewpoints of compatibility when making a resin composition and flexibility of a cured film, the compound containing an unsaturated hydrocarbon group is preferably one having 8 to 80 carbon atoms, and more preferably 10 to 60 carbon atoms.

Examples of the unsaturated hydrocarbon group-containing compound include unsaturated hydrocarbons having 4 to 100 carbon atoms, polybutadiene having a carboxyl group, epoxidized polybutadiene, linoleyl alcohol, oleyl alcohol, unsaturated fatty acids, and unsaturated fatty acids. ester. Examples of suitable unsaturated fatty acids include butenoic acid, myristic acid, palmitoleic acid, oleic acid, oleic acid, isoleic acid, cocoic acid, erucic acid, docosaliconic acid, linoleic acid, Alpha-linolenic acid, paulownic acid, octacosatenoic acid, arachidonic acid, eicosapentaenoic acid, herring acid and docosahexaenoic acid. Among these, esters of unsaturated fatty acids having 8 to 30 carbon atoms and mono to trivalent alcohols having 1 to 10 carbon atoms are more preferred, and unsaturated fatty acids having 8 to 30 carbon atoms are particularly preferred as the trihydric alcohol. Of glycerol.

Esters of unsaturated fatty acids and glycerol having 8 to 30 carbon atoms are commercially available in the form of vegetable oils. Vegetable oils include non-drying oils with an iodine value of 100 or less, semi-drying oils with an iodine value of more than 100 and less than 130, or dry oils with an iodine value of 130 or more. Examples of the non-drying oil include olive oil, morning glory seed oil, radix multiflorum seed oil, camellia oil, camellia oil, castor oil, and peanut oil. Examples of the semi-dry oil include corn oil, cottonseed oil, and sesame oil. Examples of the dry oil include tung oil, linseed oil, soybean oil, walnut oil, safflower oil, sunflower oil, perilla seed oil, and mustard oil. Further, a processed vegetable oil obtained by processing these vegetable oils may be used.

Among the above-mentioned vegetable oils, it is preferable to use a non-drying oil from the viewpoint of preventing gelation accompanied by excessive reaction from occurring in the reaction between phenol or a derivative thereof or a phenol resin and a vegetable oil in order to improve yield. On the other hand, from the viewpoint of improving the adhesion, mechanical properties, and thermal shock resistance of the resist pattern, it is preferable to use a dry oil. Among the dry oils, tung oil, linseed oil, soybean oil, walnut oil, and safflower oil are preferred, and tung oil and linseed oil are more preferred.

These unsaturated hydrocarbon group-containing compounds may be used singly or in combination of two or more kinds.

In preparing the component (b), the above-mentioned phenol derivative is first reacted with the above-mentioned compound containing an unsaturated hydrocarbon group to produce an unsaturated hydrocarbon-group-modified phenol derivative. The reaction is preferably performed at 50 to 130 ° C. As for the reaction ratio of the phenol derivative and the compound containing an unsaturated hydrocarbon group, from the viewpoint of improving the flexibility of the cured film (resist pattern), it is preferable that the content of the phenol derivative is 100 mass parts of the phenol derivative. The hydrocarbon-based compound is 1 to 100 parts by mass, and more preferably 5 to 50 parts by mass. If the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the heat resistance of the cured film tends to decrease. In the above reaction, p-toluenesulfonic acid, trifluoromethanesulfonic acid, or the like may be used as a catalyst as required.

The unsaturated hydrocarbon-group-modified phenol derivative produced by the above-mentioned reaction is polycondensed with aldehydes, thereby producing a phenol resin modified by a compound containing an unsaturated hydrocarbon group. As the aldehydes, aldehydes which are the same as those used to obtain phenol resins can be used.

The reaction system of the aldehydes and the unsaturated hydrocarbon-based modified phenol derivative is a polycondensation reaction, and the synthetic conditions of a conventionally known phenol resin can be used. The reaction is preferably performed in the presence of a catalyst such as an acid or a base, and more preferably an acid catalyst is used. Examples of the acid catalyst include hydrochloric acid, sulfuric acid, formic acid, acetic acid, p-toluenesulfonic acid, and oxalic acid. These acid catalysts can be used alone or in combination of two or more.

The reaction is usually preferably performed at a reaction temperature of 100 to 120 ° C. The reaction time varies depending on the type or amount of the catalyst used, and is usually 1 to 50 hours. After the reaction is completed, the reaction product is dehydrated under reduced pressure at a temperature of 200 ° C or lower, thereby obtaining a phenol resin modified by a compound containing an unsaturated hydrocarbon group. Furthermore, solvents such as toluene, xylene, and methanol can be used in the reaction.

A phenol resin modified by a compound containing an unsaturated hydrocarbon group can also be obtained by polycondensing the unsaturated hydrocarbon group-modified phenol derivative described above with a compound other than phenol such as m-xylene and aldehydes. . In this case, the molar ratio of the compound other than phenol to the compound obtained by reacting the phenol derivative with the unsaturated hydrocarbon group-containing compound is preferably less than 0.5.

The component (b) can also be obtained by reacting the phenol resin of the component (a) with an unsaturated hydrocarbon group-containing compound.

The unsaturated hydrocarbon group-containing compound to be reacted with the phenol resin may be the same as the above unsaturated hydrocarbon group-containing compound.

It is preferred that the reaction between the phenol resin and the compound containing an unsaturated hydrocarbon group is usually performed at 50 to 130 ° C. From the viewpoint of improving the flexibility of the cured film (resist pattern), the reaction ratio of the phenol resin to the unsaturated hydrocarbon group-containing compound is preferably 100% by mass based on the phenol resin. The compound is 1 to 100 parts by mass, more preferably 2 to 70 parts by mass, and even more preferably 5 to 50 parts by mass. If the content of the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease. If it exceeds 100 parts by mass, the possibility of gelation during the reaction tends to be high, and the hardening tends to increase. The heat resistance of the film tends to decrease. At this time, p-toluenesulfonic acid, trifluoromethanesulfonic acid, or the like may be used as a catalyst as needed. Furthermore, solvents such as toluene, xylene, methanol, and tetrahydrofuran can be used in the reaction.

The polybasic acid anhydride is further reacted with a phenolic hydroxyl group remaining in a phenol resin modified by an unsaturated hydrocarbon group-containing compound produced by the method described above. Thereby, an acid-modified phenol resin can also be used as a component (b). By introducing a carboxyl group by acid modification with a polybasic acid anhydride, the solubility of the component (b) in an alkaline aqueous solution (developing solution) is further improved.

The polybasic acid anhydride is not particularly limited as long as it has an acid anhydride group, which is formed by dehydration condensation of carboxyl groups of a polybasic acid having a plurality of carboxyl groups. Examples of the polybasic acid anhydride include phthalic anhydride, succinic anhydride, octenyl succinic anhydride, penta (dodecenyl) succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, and hexahydrophthalic acid. Dicarboxylic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, dianhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylene Tetrahydrophthalic anhydride, tetrabromophthalic anhydride, trimellitic anhydride and other dibasic anhydrides, biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenyl ethertetracarboxylic dianhydride, butane Aromatic tetracarboxylic dianhydrides such as alkanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic dianhydride and benzophenonetetracarboxylic dianhydride. These can be used alone or in combination of two or more. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably one or more members selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride. In this case, there is an advantage that a resist pattern can be formed and further has a good shape.

The alkali-soluble resin having (A) a phenolic hydroxyl group may further contain a phenol resin that has been acid-modified by reacting a polybasic acid anhydride. When the component (A) contains a phenol resin that has been acid-modified with a polybasic acid anhydride, the solubility of the component (A) in an alkaline aqueous solution (developing solution) can be further improved.

Examples of the polybasic acid anhydride include phthalic anhydride, succinic anhydride, octenyl succinic anhydride, penta (dodecenyl) succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, and Hydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, geo-anhydride, 3,6-methylenetetrahydrophthalic anhydride, methylbenzene Dibasic acid anhydrides such as methylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride, trimellitic anhydride, biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, and diphenyl ether tetracarboxylic acid di Anhydride, aromatic tetracarboxylic dianhydride such as anhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic dianhydride, benzophenonetetracarboxylic dianhydride and the like. These can be used alone or in combination of two or more. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably, for example, one or more members selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride.

(B2) Photoacid generator Examples of the photoacid generator include a diazonaphthoquinone compound, an aryldiazonium salt, a diarylsulfonium salt, and a triarylsulfonium salt. Among them, the diazonaphthoquinone compound has high sensitivity and is preferred.

(C) Additives The types or amounts of the preferred additives are the same as those described in the item of the polyimide precursor composition.

(D) The solvent is not particularly limited as long as it is a solvent capable of dissolving or dispersing each component.

(E) Others may include a thermal crosslinking agent, a sensitizer, an adhesion promoter, a dye, a surfactant, a dissolution accelerator, a crosslinking accelerator, and the like. Among them, when the photosensitive resin film after pattern formation is heated and hardened by containing a thermal crosslinking agent, the thermal crosslinking agent component reacts with the component (A) to form a bridge structure. This makes it hardenable at low temperatures, and prevents brittleness or melting of the film. As a thermal crosslinking agent component, the compound which has a phenolic hydroxyl group, the compound which has a hydroxymethylamino group, and the compound which has an epoxy group are used specifically, as a preferable thing.

(development)
After exposing the polymer having a phenolic hydroxyl group, the useless portion is washed with a developing solution. The developer used is not particularly limited. For example, sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide can be suitably used. (TMAH) and other alkaline aqueous solutions.

(Heat hardened)
After the development, the polymers having phenolic hydroxyl groups are thermally cross-linked with each other by heating the polymers having phenolic hydroxyl groups. The crosslinked polymer becomes a hardened relief pattern, that is, the interlayer insulating film 6.

The heating temperature for thermally curing the polymer having a phenolic hydroxyl group is not particularly limited, but from the viewpoint of influence on other members, the heating temperature is preferably a lower temperature. The heating temperature is preferably 250 ° C or lower, more preferably 230 ° C or lower, even more preferably 200 ° C or lower, even more preferably 180 ° or lower.

(Manufacturing method of semiconductor device)
A method for manufacturing a semiconductor device according to this embodiment will be described with reference to FIG. 3. In FIG. 3A, the wafer 10 having the previous step completed is prepared. Then, in FIG. 3B, the wafer 10 at the end of the previous step is crystallized to form a plurality of semiconductor wafers 2. The semiconductor wafer 2 may be a purchased product. The semiconductor wafer 2 prepared as described above is attached to the support 11 at a specific interval as shown in FIG. 3C.

Then, the mold resin 12 is applied from the semiconductor wafer 2 to the support 11, and the mold is sealed as shown in FIG. 3D. Then, the support body 11 is peeled, and the mold resin 12 is reversed (refer FIG. 3E). As shown in FIG. 3E, the semiconductor wafer 2 and the molding resin 12 appear on substantially the same plane. Next, the photosensitive resin composition 13 is applied onto the semiconductor wafer 2 and the mold resin 12 by the steps shown in FIG. 3F. Then, the applied photosensitive resin composition 13 is subjected to exposure and development to form a relief pattern (a relief pattern forming step). The photosensitive resin composition 13 may be any of a positive type and a negative type. Further, the relief pattern is heated to form a hardened relief pattern (an interlayer insulating film forming step). Further, wiring is formed at a portion where the hardened relief pattern is not formed (wiring forming step).

Furthermore, in this embodiment, the above-mentioned relief pattern forming step, interlayer insulating film forming step, and wiring forming step are combined as a rewiring layer forming step of forming a rewiring layer connected to the semiconductor wafer 2.

The interlayer insulating film in the redistribution layer may be a plurality of layers. Therefore, the rewiring layer formation step may include a plurality of relief pattern formation steps, a plurality of interlayer insulation film formation steps, and a plurality of wiring formation steps.

In FIG. 3G, a plurality of external connection terminals 7 (forming bumps) corresponding to the respective semiconductor wafers 2 are formed, and crystals are cut between the respective semiconductor wafers 2. Thereby, a semiconductor device (semiconductor IC) 1 can be obtained as shown in FIG. 3H. In this embodiment, a plurality of fan-out semiconductor devices 1 can be obtained by the manufacturing method shown in FIG. 3.

In this embodiment, the i-ray transmittance of the cured relief pattern (interlayer insulating film) formed through the above steps can be set to 80% or less. Here, the i-ray transmittance of the interlayer insulating film can be adjusted by the amount of the additive.

In this embodiment, it is preferable that in the above-mentioned interlayer insulating film forming step, a photosensitive resin combination capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group is used. To form an interlayer insulating film.

In the first aspect of this implementation, the i-ray transmittance of the hardened relief pattern (interlayer insulating film) formed through the above steps can be set to 80% or less. Here, the i-ray transmittance of the interlayer insulating film can be adjusted by the amount of the additive.

In the second aspect of this implementation, the weight reduction temperature of the hardened relief pattern (interlayer insulating film) formed through the above steps can be set to 300 ° C or lower. Here, the weight reduction temperature of the interlayer insulating film can be adjusted by the amount of the additive.

In the third aspect of this implementation, the refractive index difference of the hardened relief pattern (interlayer insulating film) formed through the above steps can be set to less than 0.0150. Here, the refractive index difference of the interlayer insulating film can be adjusted by the amount of the additive.

In this embodiment, it is preferable that in the above-mentioned interlayer insulating film forming step, a photosensitive resin combination capable of forming at least one compound of polyfluoreneimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group To form an interlayer insulating film.
[Example]

Hereinafter, examples performed to clarify the effects of the present invention will be described. In the examples, the following materials and measurement methods were used.
[Example]
Hereinafter, examples performed to clarify the effects of the present invention will be described.

(Polymer A-1: Synthesis of Polyimide Precursor)
4,4'-oxydiphthalic dianhydride (ODPA) as a tetracarboxylic dianhydride was placed in a separable flask having a capacity of 2 liters. Furthermore, 2-hydroxyethyl methacrylate (HEMA) and γ-butyrolactone were added and stirred at room temperature, and pyridine was added while stirring to obtain a reaction mixture. After the exotherm due to the reaction was completed, it was left to cool to room temperature and left for 16 hours.

Next, while cooling in an ice bath, while stirring the solution in which dicyclohexylcarbodiimide (DCC) was dissolved in γ-butyrolactone, it was added to the reaction mixture over 40 minutes. Then, while stirring in γ-butyrolactone, 4,4'-diaminodiphenyl ether (DADPE) as a diamine was suspended, and it was added in 60 minutes. Furthermore, after stirring at room temperature for 2 hours, ethanol was added, followed by stirring for 1 hour, and then γ-butyrolactone was added. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution.

The obtained reaction solution was added to ethanol to produce a precipitate containing a crude polymer. The produced crude polymer was separated by filtration and dissolved in tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was dropped into water to precipitate a polymer, and the obtained precipitate was separated by filtration and vacuum-dried to obtain a powdery polymer (polyimide precursor (polymer A- 1)). The mass of the compound used in component A-1 is shown in Table 1 shown below.

(Synthesis of Polymers A-2 to A-4)
A tetracarboxylic dianhydride and a diamine were changed as shown in Table 1 below, and the reaction was carried out in the same manner as described in the above-mentioned polymer A-1 to obtain a polyimide precursor (polymer A-2 ~ A-4).

(Polymer B-1: Synthesis of Polybenzoxazole Precursor)
A 0.5-liter flask equipped with a stirrer and a thermometer was charged with 15.48 g of 4,4'-diphenyl ether dicarboxylic acid and N-methylpyrrolidone as a dicarboxylic acid. After the flask was cooled to 5 ° C, thionyl chloride was added dropwise and allowed to react for 30 minutes to obtain a solution of dicarboxylic acid chloride. Next, a 0.5-liter flask equipped with a stirrer and a thermometer was charged with N-methylpyrrolidone. 18.30 g of bis (3-amino-4-hydroxyphenyl) hexafluoropropane as bisaminophenol and 2.18 g of m-aminophenol were stirred and dissolved, and then pyridine was added. Then, while maintaining the temperature at 0 to 5 ° C, the solution of dicarboxyphosphonium chloride was added dropwise over 30 minutes, and then the stirring was continued for 30 minutes. The solution was poured into 3 liters of water, and the precipitate was recovered, washed three times with pure water, and then dried under reduced pressure to obtain a polymer (polybenzoxazole precursor (polymer B-1)). The mass of the compound used in the polymer B-1 is shown in Table 1 below.

(Synthesis of Polymers B-2 to B-3)
The dicarboxylic acid and bisaminophenol were changed as shown in Table 1 below, and the reaction was performed in the same manner as described in the above-mentioned polymer B-1 to obtain a polybenzoxazole precursor (polymer B- 2 ~ B-3).

(Polymer C-1: Synthesis of Phenol Resin)
A phenol resin containing 85 g of a C1 resin shown below and 15 g of a C2 resin shown below was prepared as polymer C-1.
C1: Cresol novolac resin (cresol / formaldehyde novolac resin, m-cresol / p-cresol (molar ratio) = 60/40, polystyrene equivalent weight average molecular weight = 12,000, manufactured by Asahi Organic Materials Industry Co., (Brand name `` EP4020G '')

C2: C2 was synthesized as shown below.
<C2: Synthesis of a phenol resin modified by a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms>
100 parts by mass of phenol, 43 parts by mass of linseed oil, and 0.1 part by mass of trifluoromethanesulfonic acid were mixed and stirred at 120 ° C for 2 hours to obtain a vegetable oil-modified phenol derivative (a). Next, 130 g of a vegetable oil-modified phenol derivative (a), 16.3 g of paraformaldehyde, and 1.0 g of oxalic acid were mixed and stirred at 90 ° C. for 3 hours. Next, after heating up to 120 ° C. and stirring for 3 hours under reduced pressure, 29 g of succinic anhydride and 0.3 g of triethylamine were added to the reaction solution, and the mixture was stirred at 100 ° C. for 1 hour under atmospheric pressure. The reaction solution was cooled to room temperature to obtain a phenol resin (hereinafter referred to as "C2 resin") modified by a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms as a reaction product (acid value of 120 mgKOH / g).

(Synthesis of Polymer C-2)
As the polymer C-2, 100 g of the following C1 resin was prepared.

[Table 1]

[Examples 1 to 11, Comparative Examples 1 to 2]
The solution was prepared as shown in Table 2 below to obtain a solution of a photosensitive resin composition. The units in Table 2 are parts by mass.

Using the compounds described in Table 2, each of the photosensitive resin compositions of Examples 1 to 11 and Comparative Examples 1 and 2 was prepared at the compounding amounts described in Tables 3 and 4.

About the produced photosensitive resin composition, (1) an i-ray transmittance measurement test, (2) a sealing material deterioration test, and (3) an adhesiveness test with a sealing material were performed. The results of each test are shown in Table 3 below.

(1) i-ray transmittance measurement test Using the photosensitive resin composition prepared in each example and each comparative example, a fan-out type wafer level wafer size package type semiconductor device was produced. An interlayer insulating film having a thickness of 10 μm was taken out of the fabricated semiconductor device as thoroughly as possible. The UV-1800 device manufactured by Shimadzu Corporation was used to measure the removed interlayer insulating film under the conditions of a scanning speed of medium speed and a sampling interval of 0.5 nm, thereby measuring the i-ray transmittance.

(2) Sealing Material Deterioration Test As an epoxy-based sealing material, the R4000 series manufactured by Nagase Chemical Co., Ltd. was prepared. Next, the sealing material was spin-coated on a silicon wafer subjected to aluminum sputtering so that the thickness became about 150 microns, and the epoxy-based sealing material was cured by thermal curing at 130 ° C. The photosensitive resin composition produced in each Example and each comparative example was apply | coated to the said epoxy-type hardened film so that the final film thickness might become 10 micrometers. The applied photosensitive resin composition was exposed at 200 mJ / cm ² in Examples 1 to 4, 10 and Comparative Example 1, and 500 mJ in Examples 5 to 7, 11 and Comparative Example 2. The exposure conditions per cm ² were exposed to 700 mJ / cm ² in Examples 8 and 9 on the entire surface. Thereafter, it was heat-cured at 200 ° C. for 2 hours to prepare a first-layer cured film having a thickness of 10 μm.

The photosensitive resin composition used in the formation of the first-layer cured film is coated on the first-layer cured film, and the entire surface is exposed under the same conditions as when the first-layer cured film is produced, and then it is thermally cured. A second hardened film with a thickness of 10 microns was produced.

The cross-section of the test piece after the formation of the second hardened film was cut by a FIB device (manufactured by Japan Electronics Co., Ltd., JIB-4000), and the presence or absence of voids in the epoxy portion was confirmed to evaluate the degree of deterioration. A case where no pore was found was set to ○, and a case where one pore was found was set to x.

(3) Adhesion test with sealing material
The styli were erected on the sample produced in the sealing material deterioration test, and the adhesion test was performed using a traction tester (manufactured by Quad Group, Sebastian 5). That is, the adhesiveness of the epoxy-type sealing material and the hardened convex pattern produced from the photosensitive resin composition produced in each Example and each comparative example was tested.
Evaluation: Adhesive strength is 70 MPa or more ...
50 MPa or more and less than -70 MPa ...
30 MPa or more and less than -50 MPa ...
Less than 30 MPa ...

[Table 2]

[table 3]

[Table 4]

Using the photosensitive resin composition described in Examples 1 to 11, a fan-out type wafer-level wafer-size package-type semiconductor device containing epoxy resin in a mold resin was produced, and as a result, it could operate without problems.

(Polymer H-1: Synthesis of Polyimide Precursor)
4,4'-oxydiphthalic dianhydride (ODPA) as a tetracarboxylic dianhydride was placed in a separable flask having a capacity of 2 liters. Furthermore, 2-hydroxyethyl methacrylate (HEMA) and γ-butyrolactone were added and stirred at room temperature, and pyridine was added while stirring to obtain a reaction mixture. After the exotherm due to the reaction was completed, it was left to cool to room temperature and left for 16 hours.

Next, while cooling in an ice bath, while stirring the solution in which dicyclohexylcarbodiimide (DCC) was dissolved in γ-butyrolactone, it was added to the reaction mixture over 40 minutes. Then, while stirring in γ-butyrolactone, 4,4'-diaminodiphenyl ether (DADPE) as a diamine was suspended, and it was added in 60 minutes. After further stirring at room temperature for 2 hours, ethanol was added and the mixture was stirred for 1 hour, followed by γ-butyrolactone. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution.

The obtained reaction solution was added to ethanol to produce a precipitate containing a crude polymer. The produced crude polymer was separated by filtration and dissolved in tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was dropped into water to precipitate a polymer, and the obtained precipitate was separated by filtration and vacuum-dried to obtain a powdery polymer (polyimide precursor (polymer H- 1)). The mass of the compound used in component H-1 is shown in Table 5 shown below.

(Synthesis of Polymers H-2 ～ H-4)
A tetracarboxylic dianhydride and a diamine were changed as shown in Table 5 below, and the reaction was carried out in the same manner as described in the above polymer H-1 to obtain a polyimide precursor (polymer H-2 ~ H-4).

(Polymer I-1: Synthesis of Polybenzoxazole Precursor)
A 0.5-liter flask equipped with a stirrer and a thermometer was charged with 15.48 g of 4,4'-diphenyl ether dicarboxylic acid and N-methylpyrrolidone as a dicarboxylic acid. After the flask was cooled to 5 ° C, thionyl chloride was added dropwise for 30 minutes to obtain a solution of dicarboxylic acid chloride. Next, a 0.5-liter flask equipped with a stirrer and a thermometer was charged with N-methylpyrrolidone. 18.30 g of bis (3-amino-4-hydroxyphenyl) hexafluoropropane as bisaminophenol and 2.18 g of m-aminophenol were stirred and dissolved, and then pyridine was added. Then, while maintaining the temperature at 0 to 5 ° C, the solution of dicarboxyphosphonium chloride was added dropwise over 30 minutes, and then the stirring was continued for 30 minutes. The solution was poured into 3 liters of water, and the precipitate was recovered, washed three times with pure water, and then dried under reduced pressure to obtain a polymer (polybenzoxazole precursor (polymer I-1)). The mass of the compound used in the polymer I-1 is shown in Table 5 below.

(Synthesis of Polymers I-2 to I-3)
A dicarboxylic acid and a diaminophenol were changed as shown in Table 5 below, and the reaction was performed in the same manner as described in the above polymer I-1 to obtain a polybenzoxazole precursor (polymer I- 2 ~ I-3).

(Polymer J-1: Synthesis of Phenol Resin)
As a polymer J-1, a phenol resin containing 85 g of a J1 resin shown below and 15 g of a J2 resin shown below was prepared.
J1: Cresol novolac resin (cresol / formaldehyde novolac resin, m-cresol / p-cresol (molar ratio) = 60/40, polystyrene equivalent weight average molecular weight = 12,000, manufactured by Asahi Organic Materials Industry Co. (Brand name `` EP4020G '')

J2: J2 is synthesized as shown below.
<J2: Synthesis of phenol resin modified by a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms>
100 parts by mass of phenol, 43 parts by mass of linseed oil, and 0.1 part by mass of trifluoromethanesulfonic acid were mixed and stirred at 120 ° C for 2 hours to obtain a vegetable oil-modified phenol derivative (a). Next, 130 g of a vegetable oil-modified phenol derivative (a), 16.3 g of paraformaldehyde, and 1.0 g of oxalic acid were mixed and stirred at 90 ° C. for 3 hours. Next, after heating up to 120 ° C. and stirring for 3 hours under reduced pressure, 29 g of succinic anhydride and 0.3 g of triethylamine were added to the reaction solution, and the mixture was stirred at 100 ° C. for 1 hour under atmospheric pressure. The reaction solution was cooled to room temperature to obtain a phenol resin (hereinafter referred to as "J2 resin") modified by a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms as a reaction product (acid value of 120 mgKOH / g).

(Synthesis of Polymer J-2)
As a polymer J-2, 100 g of the following J1 resin was prepared.

[table 5]

[Examples 12 to 22, Comparative Examples 3 to 4]
The solution was prepared as shown in Table 6 below to obtain a solution of a photosensitive resin composition. The units in Table 6 are parts by mass.

Using the compounds described in Table 6, each of the photosensitive resin compositions of Examples 12 to 22 and Comparative Examples 3 to 4 were prepared at the compounding amounts described in Tables 7 and 8.

About the produced photosensitive resin composition, (4) 5% weight reduction temperature measurement test, (5) reflow resistance test of a sealing material, and (6) adhesion test with a sealing material were performed. The results of each test are shown in Table 7 below.

(4) 5% weight reduction temperature measurement test Using the photosensitive resin compositions prepared in the examples and comparative examples, a fan-out wafer-level wafer-size package-type semiconductor device was fabricated. An interlayer insulating film having a thickness of 10 μm was taken out of the fabricated semiconductor device as thoroughly as possible. Using a DTG-60A device manufactured by Shimadzu Corporation, the taken-out interlayer insulating film was measured in a nitrogen atmosphere at a temperature increase rate of 10 ° C / min, and the 5% weight reduction temperature was measured.

(5) Reflow resistance test of sealing materials R4000 series manufactured by Nagase Chemical Co., Ltd. is prepared as epoxy-based sealing materials. Next, the sealing material was spin-coated on a silicon wafer subjected to aluminum sputtering so that the thickness became about 150 μm, and the epoxy-based sealing material was cured by thermal curing at 130 ° C.

The photosensitive resin composition prepared in the Example and the comparative example was apply | coated to the said epoxy-type hardened film so that the final film thickness might become 10 micrometers. The applied photosensitive resin composition was exposed at 200 mJ / cm ² in Examples 12 to 15, 21 and Comparative Example 3, and 500 mJ in Examples 16 to 18, 22, and Comparative Example 4. The exposure conditions of / cm ² were exposed to 700 mJ / cm ² in Examples 19 and 20, and the entire surface was exposed, and then heat-cured at 180 ° C for 2 hours to produce a first thickness of 10 μm. Layer of hardened film.

The photosensitive resin composition used in the formation of the first-layer cured film is coated on the first-layer cured film, and the entire surface is exposed under the same conditions as when the first-layer cured film is formed, and then heated. Hardened to form a second hardened film with a thickness of 10 μm.

The test piece after the formation of the second hardened film was heated to a peak temperature in a nitrogen atmosphere under simulated reflow conditions using a mesh belt continuous baking furnace (manufactured by Koyo Thermo Systems, model name 6841-20AMC-36). 260 ° C. The so-called simulated reflow conditions are based on the reflow conditions described in item 7.6 of IPC / JEDEC J-STD-020A, the standard specification of the US semiconductor industry group, which is related to the evaluation method of semiconductor devices. Standardized for high temperatures of 220 ° C.

The cross section of the cured film processed under the above-mentioned simulated reflow conditions was cut by a FIB device (manufactured by Japan Electronics Co., Ltd., JIB-4000), and the presence or absence of voids in the epoxy portion was confirmed to evaluate the degree of deterioration. A case where no pore was found was set to ○, and a case where one pore was found was set to x.

(6) Adhesion test with sealing material The sample made of the photosensitive resin cured film made in the test of (5) was used to stand the stylus, and the adhesion test was performed using a traction tester (manufactured by Quad Group, Sebastian 5). .
Evaluation: Adhesive strength is 70 MPa or more ..............
50 MPa or more and less than -70 MPa ...
30 MPa or more and less than -50 MPa ...
Less than 30 MPa ...............

[TABLE 6]

[TABLE 7]

[TABLE 8]

From Tables 7 and 8, it can be seen that the results of the tests (4) to (6) based on the photosensitive resin compositions of Examples 12 to 22 can be confirmed when the 5% weight loss temperature is 300 ° C or lower. In the reflow resistance test of the sealing material, no void was found in the epoxy portion, and in the adhesion test with the sealing material, the evaluation of the adhesion was any of ◎, ○, and △.

On the other hand, it can be seen from Tables 7 and 8 that the results of the tests (4) to (6) based on the photosensitive resin compositions of Comparative Examples 3 and 4 can be confirmed at a weight reduction temperature of more than 300 ° C. In this case, in the reflow resistance test of the sealing material, voids were found in the epoxy part, and in the adhesion test with the sealing material, the adhesion was evaluated as ×.

Using the photosensitive resin compositions of Examples 12 to 22, a fan-out type wafer-level wafer-size package-type semiconductor device containing epoxy resin in a mold resin was produced, and as a result, it could operate without problems.

(Polymer O-1: Synthesis of Polyimide Precursor)
4,4'-oxydiphthalic dianhydride (ODPA) as a tetracarboxylic dianhydride was placed in a separable flask having a capacity of 2 liters. Furthermore, 2-hydroxyethyl methacrylate (HEMA) and γ-butyrolactone were added and stirred at room temperature, and pyridine was added while stirring to obtain a reaction mixture. After the exotherm due to the reaction was completed, it was left to cool to room temperature and left for 16 hours.

Next, while cooling in an ice bath, while stirring the solution in which dicyclohexylcarbodiimide (DCC) was dissolved in γ-butyrolactone, it was added to the reaction mixture over 40 minutes. Then, while stirring in γ-butyrolactone, 4,4'-diaminodiphenyl ether (DADPE) as a diamine was suspended, and it was added in 60 minutes. After further stirring at room temperature for 2 hours, ethanol was added and the mixture was stirred for 1 hour, followed by γ-butyrolactone. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution.

The obtained reaction solution was added to ethanol to produce a precipitate containing a crude polymer. The produced crude polymer was separated by filtration and dissolved in tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was dropped into water to precipitate a polymer, and the obtained precipitate was separated by filtration and vacuum-dried to obtain a powdery polymer (polyimide precursor (polymer O- 1)). The mass of the compound used in component O-1 is shown in Table 9 shown below.

(Synthesis of polymer O-2 ～ O-4)
A tetracarboxylic dianhydride and a diamine were changed as shown in Table 9 below, and the reaction was carried out in the same manner as described in the above-mentioned polymer O-1 to obtain a polyfluorene imide precursor (polymer O-2 ~ O-4).

(Polymer P-1: Synthesis of Polybenzoxazole Precursor)
A 0.5-liter flask equipped with a stirrer and a thermometer was charged with 15.48 g of 4,4'-diphenyl ether dicarboxylic acid and N-methylpyrrolidone as a dicarboxylic acid. After the flask was cooled to 5 ° C, thionyl chloride was added dropwise and allowed to react for 30 minutes to obtain a solution of dicarboxylic acid chloride. Next, a 0.5-liter flask equipped with a stirrer and a thermometer was charged with N-methylpyrrolidone. 18.30 g of bis (3-amino-4-hydroxyphenyl) hexafluoropropane as bisaminophenol and 2.18 g of m-aminophenol were stirred and dissolved, and then pyridine was added. Then, while maintaining the temperature at 0 to 5 ° C, the solution of dicarboxyphosphonium chloride was added dropwise over 30 minutes, and then the stirring was continued for 30 minutes. The solution was poured into 3 liters of water, and the precipitate was recovered, washed three times with pure water, and then dried under reduced pressure to obtain a polymer (polybenzoxazole precursor (polymer P-1)). The mass of the compound used in the polymer P-1 is shown in Table 9 below.

(Synthesis of Polymers P-2 to P-3)
The dicarboxylic acid and bisaminophenol were changed as shown in Table 9 below, and the reaction was performed in the same manner as described in the above-mentioned polymer P-1 to obtain a polybenzoxazole precursor (polymer P- 2 ~ P-3).

(Polymer Q-1: Synthesis of phenol resin)
A phenol resin containing 85 g of a Q1 resin shown below and 15 g of a Q2 resin shown below was prepared as polymer Q-1.
Q1: Cresol novolac resin (cresol / formaldehyde novolac resin, m-cresol / p-cresol (molar ratio) = 60/40, polystyrene equivalent weight average molecular weight = 12,000, manufactured by Asahi Organic Materials Co. (Brand name `` EP4020G '')

Q2: Q2 is synthesized as shown below.
<Q2: Synthesis of phenol resin modified by a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms>
100 parts by mass of phenol, 43 parts by mass of linseed oil, and 0.1 part by mass of trifluoromethanesulfonic acid were mixed and stirred at 120 ° C for 2 hours to obtain a vegetable oil-modified phenol derivative (a). Next, 130 g of a vegetable oil-modified phenol derivative (a), 16.3 g of paraformaldehyde, and 1.0 g of oxalic acid were mixed and stirred at 90 ° C. for 3 hours. Next, after heating up to 120 ° C. and stirring for 3 hours under reduced pressure, 29 g of succinic anhydride and 0.3 g of triethylamine were added to the reaction solution, and the mixture was stirred at 100 ° C. for 1 hour under atmospheric pressure. The reaction solution was cooled to room temperature to obtain a phenol resin (hereinafter referred to as "Q2 resin") modified by a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms as a reaction product (acid value of 120 mgKOH / g).

(Synthesis of Polymer Q-2)
As a polymer Q-2, 100 g of the following Q1 resin was prepared.

[TABLE 9]

[Examples 23 to 33, Comparative Examples 5 to 6]
The solution was prepared as shown in Table 10 below to obtain a solution of a photosensitive resin composition. The units in Table 10 are parts by mass.

Using the compounds described in Table 10, each of the photosensitive resin compositions of Examples 23 to 33 and Comparative Examples 5 to 6 was prepared at the compounding amounts described in Table 11 and Table 12.

About the prepared photosensitive resin composition, (7) a refractive index difference measurement test, (8) a reflow resistance test of a sealing material, and (9) an adhesion test with a sealing material were performed. The results of each test are shown in Table 11 below.

(7) Refractive index difference measurement test Using the photosensitive resin compositions prepared in Examples and Comparative Examples, a fan-out wafer-level wafer-size package-type semiconductor device was fabricated. An interlayer insulating film having a thickness of 10 μm was taken out of the fabricated semiconductor device as thoroughly as possible. The interlayer insulating film thus taken out was measured for a difference between an in-plane refractive index and an out-of-plane refractive index at a wavelength of 1310 nm by using a rubidium coupler device (PC-2010) manufactured by METRICON Corporation.

(8) Reflow resistance test of sealing material R4000 series manufactured by Nagase Chemical Co., Ltd. is prepared as an epoxy-based sealing material. Next, the sealing material was spin-coated on a silicon wafer subjected to aluminum sputtering so that the thickness became about 150 μm, and the epoxy-based sealing material was cured by thermal curing at 130 ° C.

The photosensitive resin composition prepared in the Example and the comparative example was apply | coated to the said epoxy-type hardened film so that the final film thickness might become 10 micrometers. The applied photosensitive resin composition was exposed at 200 mJ / cm ² in Examples 23 to 26, 32 and Comparative Example 5, and 500 mJ in Examples 27 to 29, 33, and Comparative Example 6. / cm ² exposure conditions, the entire surface was exposed, and then heat-cured at 150 ° C. for 4 hours to produce a first-layer cured film having a thickness of 10 μm.

The photosensitive resin composition used in the formation of the first-layer cured film is coated on the first-layer cured film, the entire surface is exposed under the same conditions as when the first-layer cured film is made, and then It is heat cured to form a second hardened film with a thickness of 10 μm.

The test piece after the formation of the second hardened film was heated to a peak temperature in a nitrogen atmosphere under simulated reflow conditions using a mesh belt continuous baking furnace (manufactured by Koyo Thermo Systems, model name 6841-20AMC-36). 260 ° C. The so-called simulated reflow conditions are based on the form of reflow conditions described in item 7.6 of the standard specification IPC / JEDEC J-STD-020A of the United States Semiconductor Industry Association related to the evaluation method of semiconductor devices. It is standardized at 220 ° C.

The cross section of the cured film processed under the above-mentioned simulated reflow conditions was cut by a FIB device (manufactured by Japan Electronics Co., Ltd., JIB-4000), and the presence or absence of voids in the epoxy portion was confirmed to evaluate the degree of deterioration. A case where no pore was found was set to ○, and a case where one pore was found was set to x.

(9) Adhesion test with sealing material The sample made of the photosensitive resin cured film in the test of (8) was used to stand the stylus, and the adhesion test was performed using a traction tester (manufactured by Quad Group, Sebastian 5). .
Evaluation: Adhesive strength is 70 MPa or more ..............
50 MPa or more and less than -70 MPa ...
30 MPa or more and less than -50 MPa ...
Less than 30 MPa ...............

[TABLE 10]

[TABLE 11]

[TABLE 12]

From Tables 11 and 12, it can be seen that the results of the tests (7) to (9) based on the photosensitive resin compositions of Examples 23 to 33 confirm that when the refractive index difference does not reach 0.0150, the sealing material In the reflow resistance test, no pores were found in the epoxy portion, and in the adhesion test with the sealing material, the adhesion evaluation was any of ◎, ○, and △.

On the other hand, Tables 11 and 12 show that the results of the tests (7) to (9) based on the photosensitive resin compositions of Comparative Examples 5 and 6 can be confirmed when the refractive index difference exceeds 0.0150. In the reflow resistance test of the sealing material, voids were found in the epoxy portion, and in the adhesion test with the sealing material, the adhesion was evaluated as ×.

In addition, the photosensitive resin composition of Examples 23 to 33 was used to produce a fan-out type wafer-level wafer-size package-type semiconductor device containing epoxy resin in a mold resin, and as a result, it could operate without problems.
[Industrial availability]

The present invention can be preferably applied to a semiconductor device including a semiconductor wafer and a redistribution layer connected to the semiconductor wafer, especially a fan-out type wafer-level wafer-size package type semiconductor device.

1‧‧‧ semiconductor device

2‧‧‧ semiconductor wafer

2a‧‧‧Terminal

3‧‧‧sealing material

4‧‧‧ redistribution layer

5‧‧‧ Wiring

6‧‧‧ interlayer insulation film

7‧‧‧External connection terminal

10‧‧‧ wafer

11‧‧‧ support

12‧‧‧moulding resin

13‧‧‧ photosensitive resin composition

A‧‧‧arrow

S1‧‧‧ Area

S2‧‧‧ Area

FIG. 1 is a schematic cross-sectional view of a semiconductor device according to this embodiment.

FIG. 2 is a schematic plan view of a semiconductor device according to this embodiment.

3A to 3H are examples of manufacturing steps of a semiconductor device according to this embodiment.

Fig. 4 is a comparison diagram between a flip chip BGA and a fan-out WLCSP.

Claims (108)

A semiconductor device, comprising: a semiconductor wafer, A sealing material covering the semiconductor wafer, and The redistribution layer having an area larger than that of the semiconductor wafer in a plan view, and The i-ray transmittance of the interlayer insulating film of the redistribution layer is 80% or less based on a thickness of 10 μm. The semiconductor device according to claim 1, wherein the sealing material is directly connected to the interlayer insulating film. The semiconductor device according to claim 1 or 2, wherein the sealing material comprises an epoxy resin. The semiconductor device according to any one of claims 1 to 3, wherein the interlayer insulating film includes at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. The semiconductor device according to claim 4, wherein the interlayer insulating film contains a polyfluorene imine having a structure of the following general formula (1), [化 1] (In the general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more). The semiconductor device according to claim 5, wherein X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the general formula (1) is a divalent organic group containing an aromatic ring. base. The semiconductor device according to claim 5 or 6, wherein X ¹ in the general formula (1) includes at least one structure represented by the following general formula (2) to general formula (4), [化 2] [Chemical 3] [Chemical 4] (In the general formula (4), R ₉ is an oxygen atom, a sulfur atom, or a divalent organic group). The semiconductor device according to claim 7, wherein X ¹ in the general formula (1) includes a structure represented by the following general formula (5), [Chem 5] . The semiconductor device according to any one of claims 5 to 8, wherein Y ¹ in the general formula (1) includes at least one structure represented by the following general formula (6) to general formula (8), [Chem 6] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group or a hydroxyl group having 1 to 5 carbon atoms, which may be the same or different) [Chem. 7] (R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group or a hydroxyl group having 1 to 5 carbon atoms, and may be different from each other or may be the same) [Chem. 8] (R ₂₂ is a divalent organic group, R ₂₃ ~ R ₃₀ is a hydrogen atom, a halogen atom, having 1 to 5 carbon atoms of a monovalent aliphatic group or a hydroxyl group, may be identical or different). The semiconductor device according to claim 9, wherein Y ¹ in the general formula (1) includes a structure represented by the following general formula (9), . The semiconductor device according to claim 4, wherein the polybenzoxazole includes a polybenzoxazole having a structure of the following general formula (10), [Chem. 10] (In the general formula (10), U and V are divalent organic groups.) The semiconductor device according to claim 11, wherein U in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms. The semiconductor device according to claim 12, wherein U in the general formula (10) is a linear alkylene group having 1 to 8 carbon atoms and a part or all of hydrogen atoms substituted with fluorine atoms. The semiconductor device according to any one of claims 11 to 13, wherein V in the general formula (10) is a divalent organic group containing an aromatic group. The semiconductor device according to claim 14, wherein V of the general formula (10) includes at least one structure represented by the following general formulae (6) to (8), [化 11] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different) [Chem 12] (R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, and a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or may be the same) [Chem. 13] (R ₂₂ is a divalent organic group, R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different). The semiconductor device according to claim 15, wherein V of the general formula (10) includes a structure represented by the following general formula (9), [Chem. 14] . The semiconductor device according to any one of claims 11 to 13, wherein V in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms. The semiconductor device according to claim 17, wherein V in the general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms. The semiconductor device according to claim 4, wherein the polymer having a phenolic hydroxyl group comprises a novolac-type phenol resin. The semiconductor device according to claim 4, wherein the polymer having a phenolic hydroxyl group includes a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group. The semiconductor device according to any one of claims 1 to 20, wherein when the redistribution layer is sectioned, the redistribution layer includes: a first interlayer insulating film layer; a second interlayer insulating film layer; It is a layer different from the first interlayer insulating film layer and the second interlayer insulating film layer, and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer. For example, the semiconductor device according to claim 21, wherein the first interlayer insulating film layer is in contact with the sealing material, and the i-ray transmittance of the first interlayer insulating film layer is 80% or less in terms of a thickness of 10 μm. The semiconductor device according to claim 21 or 22, wherein the composition of the second interlayer insulating film layer is different from that of the first interlayer insulating film layer. The semiconductor device according to any one of claims 21 to 23, wherein the i-ray transmittance of the second interlayer insulating film layer is different from the i-ray transmittance of the first interlayer insulating film layer. The semiconductor device according to any one of claims 1 to 24, wherein the semiconductor device is a fan-out type wafer-level wafer-size package-type semiconductor device. The semiconductor device according to any one of claims 1 to 25, wherein the i-ray transmittance of the interlayer insulating film of the redistribution layer is 70% or less in terms of a thickness of 10 μm. The semiconductor device according to claim 26, wherein the i-ray transmittance of the interlayer insulating film of the redistribution layer is 60% or less in terms of thickness of 10 μm. The semiconductor device according to claim 26, wherein the i-ray transmittance of the interlayer insulating film of the redistribution layer is 50% or less based on a thickness of 10 μm. The semiconductor device according to claim 26, wherein the i-ray transmittance of the interlayer insulating film of the redistribution layer is 40% or less in terms of thickness 10 μm. The semiconductor device according to claim 26, wherein the i-ray transmittance of the interlayer insulating film of the redistribution layer is 30% or less in terms of thickness of 10 μm. The semiconductor device according to any one of claims 1 to 30, wherein the i-ray transmittance of the interlayer insulating film of the redistribution layer described above is 5% or more in terms of a thickness of 10 μm. The semiconductor device according to claim 31, wherein the i-ray transmittance of the interlayer insulating film of the redistribution layer is 10% or more in terms of thickness 10 μm. The semiconductor device according to claim 31, wherein the i-ray transmittance of the interlayer insulating film of the redistribution layer is 20% or more in terms of thickness 10 μm. A method for manufacturing a semiconductor device, comprising: a step of covering a semiconductor wafer with a sealing material; and A step of forming a redistribution layer having an area larger than the above-mentioned semiconductor wafer in plan view and including an interlayer insulating film, and The i-ray transmittance of the interlayer insulating film is 80% or less based on a thickness of 10 μm. The method for manufacturing a semiconductor device according to claim 34, comprising forming the above-mentioned interlayer insulating film using a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. Interlayer insulating film forming step. The method for manufacturing a semiconductor device according to claim 35, wherein the step of forming the interlayer insulating film includes using the above-mentioned photosensitive resin adjusted by additives such that the i-ray transmittance of the interlayer insulating film becomes 80% or less in terms of thickness of 10 μm. The step of forming the interlayer insulating film by the composition. A semiconductor device, comprising: a semiconductor wafer, A sealing material covering the semiconductor wafer, and The redistribution layer having an area larger than that of the semiconductor wafer in a plan view, and The 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is 300 ° C or lower. The semiconductor device according to claim 37, wherein the sealing material is directly connected to the interlayer insulating film. The semiconductor device according to claim 37 or 38, wherein the sealing material comprises an epoxy resin. The semiconductor device according to any one of claims 37 to 39, wherein the interlayer insulating film includes at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. The semiconductor device according to claim 40, wherein the interlayer insulating film contains polyfluorene imine having a structure of the following general formula (1), [Chem. 15] (In the general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more). The semiconductor device 41 of the requested item, wherein in the general formula (1), X ¹ is the aromatic rings containing a tetravalent organic group, and said general formula Y (1) in the ¹ containing an organic divalent aromatic rings base. The semiconductor device according to claim 41 or 42, wherein X ¹ in the general formula (1) includes at least one structure represented by the following general formula (2) to general formula (4), [Chem. 16] [Chemical 17] [Chemical 18] (In the general formula (4), R ₉ is an oxygen atom, a sulfur atom, or a divalent organic group). The semiconductor device according to claim 43, wherein X ¹ in the general formula (1) includes a structure represented by the following general formula (5), [Chem. 19] . The semiconductor device according to any one of claims 41 to 44, wherein Y ¹ in the general formula (1) includes at least one structure represented by the following general formula (6) to general formula (8), [Chem 20] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group or a hydroxyl group having 1 to 5 carbon atoms, which may be the same or different) [Chem 21] (R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group or a hydroxyl group having 1 to 5 carbon atoms, and may be different from each other or may be the same.) [Chem. 22] (R ₂₂ is a divalent organic group, R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group or a hydroxyl group having 1 to 5 carbon atoms, which may be the same or different). The semiconductor device according to claim 45, wherein Y ¹ in the general formula (1) includes a structure represented by the following general formula (9), [Chem. 23] . The semiconductor device according to claim 40, wherein the polybenzoxazole includes a polybenzoxazole having a structure of the following general formula (10), [Chem. 24] (In the general formula (10), U and V are divalent organic groups.) The semiconductor device according to claim 47, wherein U in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms. The semiconductor device according to claim 48, wherein U in the general formula (10) is a linear alkylene group having 1 to 8 carbon atoms and a part or all of hydrogen atoms substituted with fluorine atoms. The semiconductor device according to any one of claims 47 to 49, wherein V in the general formula (10) is a divalent organic group containing an aromatic group. The semiconductor device according to claim 50, wherein V in the general formula (10) includes at least one structure represented by the following general formulae (6) to (8), [Chem. 25] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different) [Chem. 26] (R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, and a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or may be the same) [Chem 27] (R ₂₂ is a divalent organic group, R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different). The semiconductor device according to claim 51, wherein V in the general formula (10) includes a structure represented by the following general formula (9), [Chem 28] . The semiconductor device according to any one of claims 47 to 49, wherein V in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms. The semiconductor device according to claim 53, wherein V in the general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms. The semiconductor device according to claim 40, wherein the polymer having a phenolic hydroxyl group comprises a novolac-type phenol resin. The semiconductor device according to claim 40, wherein the polymer having a phenolic hydroxyl group includes a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group. The semiconductor device according to any one of claims 37 to 56, wherein the redistribution layer includes: a first interlayer insulation film layer; a second interlayer insulation film layer; and an intermediate layer when the cross-section observation is performed on the redistribution layer. It is a layer different from the first interlayer insulating film layer and the second interlayer insulating film layer, and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer. The semiconductor device according to claim 57, wherein the first interlayer insulating film layer is in contact with the sealing material, and a 5% weight reduction temperature of the first interlayer insulating film layer is 300 ° C or lower. The semiconductor device according to claim 57 or 58, wherein the composition of the second interlayer insulating film layer is different from that of the first interlayer insulating film layer. The semiconductor device according to any one of claims 57 to 59, wherein the 5% weight reduction temperature of the second interlayer insulating film layer is different from the 5% weight reduction temperature of the first interlayer insulating film layer. The semiconductor device according to any one of claims 37 to 60, wherein the semiconductor device is a fan-out type wafer-level wafer-size package-type semiconductor device. The semiconductor device according to any one of claims 37 to 61, wherein the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is 280 ° C or lower. The semiconductor device according to claim 62, wherein the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is 260 ° C or lower. The semiconductor device according to claim 62, wherein the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is 240 ° C or lower. The semiconductor device according to claim 62, wherein the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is 220 ° C or lower. The semiconductor device according to claim 62, wherein the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is 200 ° C or lower. The semiconductor device according to any one of claims 37 to 66, wherein the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is 80 ° C or higher. The semiconductor device according to claim 67, wherein the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is 100 ° C or higher. The semiconductor device according to claim 67, wherein the 5% weight reduction temperature of the interlayer insulating film of the redistribution layer is 150 ° C or higher. A method for manufacturing a semiconductor device, comprising: a step of covering a semiconductor wafer with a sealing material; and A step of forming a redistribution layer having an area larger than the above-mentioned semiconductor wafer in plan view and including an interlayer insulating film, and The 5% weight reduction temperature of the interlayer insulating film is 300 ° C or lower. The method for manufacturing a semiconductor device according to claim 70, which comprises forming the interlayer insulating film by using a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. Interlayer insulating film forming step. The method for manufacturing a semiconductor device according to claim 71, wherein the step of forming the interlayer insulating film includes forming the interlayer using the photosensitive resin composition adjusted by the additive such that the 5% weight reduction temperature of the interlayer insulating film becomes 300 ° C or lower. Steps of insulating film. A semiconductor device, comprising: a semiconductor wafer, A sealing material covering the semiconductor wafer, and The redistribution layer having an area larger than that of the semiconductor wafer in a plan view, and The absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index at the wavelength of 1310 nm of the interlayer insulating film of the redistribution layer did not reach 0.0150. The semiconductor device according to claim 73, wherein the sealing material is directly connected to the interlayer insulating film. The semiconductor device according to claim 73 or 74, wherein the sealing material comprises an epoxy resin. The semiconductor device according to any one of claims 73 to 75, wherein the interlayer insulating film includes at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. The semiconductor device according to claim 76, wherein the interlayer insulating film contains polyfluorene imine having a structure of the following general formula (1), [Chem. 29] (In the general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more). The semiconductor device according to claim 77, wherein X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the general formula (1) is a divalent organic group containing an aromatic ring . The semiconductor device according to claim 77 or 78, wherein X ¹ in the general formula (1) includes at least one structure represented by the following general formula (2) to general formula (4), [化 30] [Chemical 31] [Chemical 32] (In the general formula (4), R ₉ is an oxygen atom, a sulfur atom, or a divalent organic group). The semiconductor device according to claim 79, wherein X ¹ in the general formula (1) includes a structure represented by the following general formula (5), [Chem 33] . The semiconductor device according to any one of claims 77 to 80, wherein Y ¹ in the general formula (1) includes at least one structure represented by the following general formula (6) to general formula (8), [Chem 34] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group or a hydroxyl group having 1 to 5 carbon atoms, which may be the same or different) [Chem 35] (R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, and a monovalent organic group or a hydroxyl group having 1 to 5 carbon atoms, and may be different from each other or the same.) [Chem. 36] (R ₂₂ is a divalent group, R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group or a hydroxyl group having 1 to 5 carbon atoms, which may be the same or different). The semiconductor device according to claim 81, wherein Y ¹ in the general formula (1) includes a structure represented by the following general formula (9), [Chem 37] . The semiconductor device according to claim 76, wherein said polybenzoxazole comprises a polybenzoxazole having a structure of the following general formula (10), [Chem 38] (In the general formula (10), U and V are divalent organic groups.) The semiconductor device according to claim 83, wherein U in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms. The semiconductor device according to claim 84, wherein U in the general formula (10) is a linear alkylene group having a carbon number of 1 to 8 and a part or all of a hydrogen atom being substituted with a fluorine atom. The semiconductor device according to any one of claims 83 to 85, wherein V in the general formula (10) is a divalent organic group containing an aromatic group. The semiconductor device according to claim 86, wherein V in the general formula (10) includes at least one structure represented by the following general formulae (6) to (8), [Chem 39] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different) [Chemical 40] (R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, and a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same) [Chem. 41] (R ₂₂ is a divalent group, R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different). The semiconductor device according to claim 87, wherein V in the general formula (10) includes a structure represented by the following general formula (9), [Chem. 42] . The semiconductor device according to any one of claims 83 to 85, wherein V in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms. The semiconductor device according to claim 89, wherein V in the general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms. The semiconductor device according to claim 76, wherein the polymer having a phenolic hydroxyl group comprises a novolac-type phenol resin. The semiconductor device according to claim 76, wherein the polymer having a phenolic hydroxyl group includes a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group. The semiconductor device according to any one of claims 73 to 92, wherein in a cross-sectional observation of the redistribution layer, the redistribution layer includes: a first interlayer insulating film layer; a second interlayer insulating film layer; and an intermediate layer, It is a layer different from the first interlayer insulating film layer and the second interlayer insulating film layer, and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer. For example, the semiconductor device of claim 93, wherein the first interlayer insulating film layer is in contact with the sealing material, and an absolute value of a difference between an in-plane refractive index and an out-of-plane refractive index of the first interlayer insulating film layer is not more than 0.0150. The semiconductor device according to claim 93 or 94, wherein the composition of the second interlayer insulating film layer is different from that of the first interlayer insulating film layer. The semiconductor device according to any one of claims 93 to 95, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the second interlayer insulating film layer and the in-plane refractive index of the first interlayer insulating film layer The absolute value of the difference from the out-of-plane refractive index is different. The semiconductor device according to any one of claims 73 to 96, wherein the semiconductor device is a fan-out type wafer-level wafer-size package-type semiconductor device. The semiconductor device according to any one of claims 73 to 97, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0145 or less. The semiconductor device according to claim 98, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0140 or less. The semiconductor device according to claim 98, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0135 or less. The semiconductor device according to claim 98, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0130 or less. The semiconductor device according to claim 98, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0120 or less. The semiconductor device according to any one of claims 73 to 102, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0005 or more. The semiconductor device according to claim 103, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0010 or more. The semiconductor device according to claim 103, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0015 or more. A method for manufacturing a semiconductor device, comprising: a step of covering a semiconductor wafer with a sealing material; and A step of forming a redistribution layer having an area larger than the above-mentioned semiconductor wafer in plan view and including an interlayer insulating film, and The absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film did not reach 0.0150. The method for manufacturing a semiconductor device according to claim 106, comprising forming the above-mentioned interlayer insulating film by using a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. Interlayer insulating film forming step. For example, the method for manufacturing a semiconductor device according to claim 107, wherein the step of forming the interlayer insulating film includes using an additive to adjust the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film to less than 0.0150 The step of forming the photosensitive resin composition into the interlayer insulating film.