JP2022167937A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent adhesion between an interlayer insulating film in a rewiring layer and a sealing material, and a manufacturing method thereof.

SOLUTION: A semiconductor device (1) according to the present invention includes a semiconductor chip (2), a sealing material (3), and a rewiring layer (4) having an area larger than that of the semiconductor chip in plan view. The sealing material is in direct contact with an interlayer insulating film of the rewiring layer, and the etching rate of the interlayer insulating film (6) of the rewiring layer during oxygen plasma treatment is 0.05 microns/minute or more and 0.8 microns/minute or less. According to this invention, the semiconductor device which is excellent in the adhesiveness of the interlayer insulation film in the rewiring layer, and the sealing material, and its manufacturing method can be provided.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2023,JPO&INPIT

Description

The present invention relates to a semiconductor device and its manufacturing method.

There are various methods for semiconductor package methods in semiconductor devices. As a semiconductor package method, for example, there is a packaging method in which a semiconductor chip is covered with a sealing material (mold resin) to form an element sealing material, and a rewiring layer is formed to electrically connect with the semiconductor chip. be. Among semiconductor package methods, a semiconductor package method called Fan-Out has become mainstream in recent years.

In a fan-out type semiconductor package, a chip sealing body larger than the chip size of the semiconductor chip is formed by covering the semiconductor chip with a sealing material. Furthermore, a rewiring layer is formed that extends to the semiconductor chip and encapsulant region. The rewiring layer is formed with a thin film thickness. Further, since the rewiring layer can be formed up to the region of the sealing material, the number of external connection terminals can be increased.

For example, Patent Document 1 below is known as a fan-out type semiconductor device.

JP 2011-129767 A

A fan-out type semiconductor device requires high adhesion between an interlayer insulating film in a rewiring layer and a sealing material. However, conventional fan-out semiconductor devices do not have sufficient adhesion between the interlayer insulating film in the rewiring layer and the encapsulant.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device having excellent adhesion between an interlayer insulating film in a rewiring layer and a sealing material, and a method of manufacturing the same.

A semiconductor device according to the present invention includes a semiconductor chip, a sealing material, and a rewiring layer having an area larger than that of the semiconductor chip in plan view, and the sealing material and an interlayer insulating film of the rewiring layer. It is characterized in that the interlayer insulating film is in direct contact and has an etching rate of 0.05 μm/minute or more and 0.8 μm/minute or less during the oxygen plasma treatment of the interlayer insulating film.

In the present invention, the sealing material preferably contains an epoxy resin.

In the present invention, the interlayer insulating film preferably contains at least one selected from polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

（一般式（１）中、Ｘ^１は４価の有機基であり、Ｙ^１は２価の有機基であり、ｍは１以上の整数である。） In the present invention, the interlayer insulating film preferably contains polyimide having a structure represented by the following general formula (1).

(In general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more.)

In the present invention, X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the general formula (1) is a divalent organic group containing an aromatic ring. It is preferably a group.

（一般式（４）中、Ｒ₉は酸素原子、硫黄原子、または２価の有機基である。） In the present invention, X ¹ in the general formula (1) preferably contains at least one structure represented by the following general formulas (2) to (4).

(In general formula ( ₄ ), R9 is an oxygen atom, a sulfur atom, or a divalent organic group.)

In the present invention, X ¹ in general formula (1) preferably includes a structure represented by general formula (5) below.

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１～５の１価の脂肪族基又は水酸基であり、同一であっても異なっていてもよい。）

（Ｒ_１４～Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１～５の１価の有機基又は水酸基であり、互いに異なっていても、同一であってもよい。）

（Ｒ_２２は２価の基であり、Ｒ_２３～Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１～５の１価の脂肪族基又は水酸基であり、同一であっても異なっていてもよい。） In the present invention, Y ¹ in the general formula (1) preferably contains at least one structure represented by the following general formulas (6) to (8).

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms or a hydroxyl group, and may be the same or different.)

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms or a hydroxyl group, and may be different or the same.)

(R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different. is also good.)

In the present invention, Y ¹ in general formula (1) preferably includes a structure represented by general formula (9) below.

（一般式（１０）中、ＵとＶは、２価の有機基である。） In the present invention, the polybenzoxazole preferably contains polybenzoxazole having the structure of the following general formula (10).

(In general formula (10), U and V are divalent organic groups.)

In the present invention, U in the general formula (10) is preferably a divalent organic group having 1 to 30 carbon atoms.

In the present invention, U in the general formula (10) is preferably a chain alkylene group having 1 to 8 carbon atoms and having some or all of the hydrogen atoms substituted with fluorine atoms.

In the present invention, V in the general formula (10) is preferably a divalent organic group containing an aromatic group.

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

（Ｒ_１４～Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１～５の１価の有機基であり、互いに異なっていても、同一であってもよい。）

（Ｒ_２２は２価の基であり、Ｒ_２３～Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。） In the present invention, V in the general formula (10) preferably contains at least one structure represented by the following general formulas (6) to (8).

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are hydrogen atoms, monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different.)

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be different or the same.)

(R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different. .)

In the present invention, V in the general formula (10) preferably includes a structure represented by the following general formula (9).

In the present invention, V in the general formula (10) is preferably a divalent organic group having 1 to 40 carbon atoms.

In the present invention, V in the general formula (10) is preferably a divalent chain aliphatic group having 1 to 20 carbon atoms.

In the present invention, the polymer having phenolic hydroxyl groups preferably contains a novolak-type phenolic resin.

In the present invention, the polymer having a phenolic hydroxyl group preferably contains a phenolic resin having no unsaturated hydrocarbon group and a modified phenolic resin having an unsaturated hydrocarbon group.

In the present invention, when the rewiring layer is viewed cross-sectionally, the rewiring layer includes a first interlayer insulating film layer, a second interlayer insulating film layer, a first interlayer insulating film layer and a second interlayer insulating film layer. It is preferable to include an intermediate layer provided between the first interlayer insulating film layer and the second interlayer insulating film layer in a layer different from the two interlayer insulating film layers.

In the present invention, the first interlayer insulating film layer is in contact with the sealing material, and the etching rate of the first interlayer insulating film layer during oxygen plasma treatment is 0.05 microns/minute or more. is preferred.

In the present invention, the second interlayer insulating film layer preferably has a composition different from that of the first interlayer insulating film layer.

In the present invention, it is preferable that the etching rate of the second interlayer insulating film during the oxygen plasma treatment is different from the etching rate of the first interlayer insulating film during the oxygen plasma treatment.

In the present invention, it is preferable that the semiconductor device is a fan-out wafer level chip size package type semiconductor device.

In the present invention, it is preferable that the etching rate of the interlayer insulating film of the rewiring layer during the oxygen plasma treatment is 0.08 μm/min or more.

In the present invention, it is preferable that the etching rate of the interlayer insulating film of the rewiring layer during the oxygen plasma treatment is 0.10 μm/min or more.

In the present invention, it is preferable that the etching rate of the interlayer insulating film of the rewiring layer during the oxygen plasma treatment is 0.15 μm/minute or more.

In the present invention, it is preferable that the etching rate of the interlayer insulating film of the rewiring layer during the oxygen plasma treatment is 0.20 μm/min or more.

In the present invention, it is preferable that the etching rate of the interlayer insulating film of the rewiring layer during the oxygen plasma treatment is 0.30 μm/min or more.

In the present invention, it is preferable that the etching rate of the interlayer insulating film of the rewiring layer during the oxygen plasma treatment is 0.15 μm/min or less.

A method of manufacturing a semiconductor device according to the present invention comprises a step of forming a sealing material in contact with a semiconductor chip, and a step of forming a rewiring layer having an area larger than that of the semiconductor chip in plan view and including an interlayer insulating film. and an etching rate of the interlayer insulating film during oxygen plasma treatment is 0.05 μm/minute or more and 0.8 μm/minute or less.

In the present invention, it is preferable to include an interlayer insulating film forming step of forming the interlayer insulating film from a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

In the present invention, the interlayer insulating film forming step uses the photosensitive resin composition adjusted with an additive such that the etching rate of the interlayer insulating film during oxygen plasma treatment is 0.05 microns/minute or more. It is preferable to include the step of forming the interlayer insulating film.

ADVANTAGE OF THE INVENTION According to this invention, the semiconductor device which is excellent in the adhesiveness of the interlayer insulation film in a rewiring layer, and a sealing material, and its manufacturing method can be provided.

It is a cross-sectional schematic diagram of the semiconductor device of this embodiment. 1 is a schematic plan view of a semiconductor device according to an embodiment; FIG. It is an example of the manufacturing process of the semiconductor device of this embodiment. FIG. 2 is a comparison diagram between a flip-chip BGA and a fan-out type WLCSP;

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment (hereinafter abbreviated as "embodiment") of a semiconductor device of the present invention will be described in detail below with reference to the drawings.

It should be noted that the present invention is not limited to the following embodiments, and various modifications can be made within the scope of the gist of the present invention.

(semiconductor device)
As shown in FIG. 1 , a semiconductor device (semiconductor IC) 1 includes a semiconductor chip 2 , a sealing material (molding resin) 3 covering the semiconductor chip 2 , and a rewiring layer that adheres to the semiconductor chip 2 and the sealing material 3 . 4 and .

As shown in FIG. 1, the encapsulant 3 covers the surface of the semiconductor chip 2 and has an area larger than the area of the semiconductor chip 2 in plan view (as viewed by arrow A).

The rewiring layer 4 includes a plurality of wirings 5 electrically connected to a plurality of terminals 2 a provided on the semiconductor chip 2 and an interlayer insulating film 6 filling the spaces between the wirings 5 .

A plurality of terminals 2a provided on the semiconductor chip 2 and wirings 5 in the rewiring layer 4 are electrically connected.

One end of the wiring 5 is connected to the terminal 2 a and the other end is connected to the external connection terminal 7 . The wiring 5 between the terminal 2a and the external connection terminal 7 is entirely covered with an interlayer insulating film 6. As shown in FIG.

As shown in FIG. 1, the rewiring layer 4 is formed to be larger than the semiconductor chip 2 in plan view (as viewed by arrow A). The semiconductor device 1 shown in FIG. 1 is a fan-out wafer level chip size package (WLCSP) type semiconductor device. In the fan-out type semiconductor device, the interlayer insulating film 6 in the rewiring layer 4 adheres not only to the semiconductor chip 2 but also to the sealing material 3 . The semiconductor chip 2 is made of a semiconductor such as silicon, and has a circuit formed therein.

(rewiring layer)
The rewiring layer 4 is mainly composed of the wiring 5 and the interlayer insulating film 6 covering the wiring 5 . From the viewpoint of preventing unintended conduction with the wiring 5, the interlayer insulating film 6 is preferably a member having high insulating properties.

Here, the "rewiring layer 4" in this embodiment is a thin film layer having the wiring 5 and the interlayer insulating layer 6, as described above, and does not include an interposer or a printed wiring board. Since the semiconductor device (semiconductor IC) 1 uses the rewiring layer 4, as shown in FIG. 4, it is thinner than a semiconductor device using an interposer such as a flip chip BGA.

In this embodiment, the film thickness of the rewiring layer 4 can be set to approximately 3 to 30 μm. The film thickness of the rewiring layer 4 may be 1 μm or more, 5 μm or more, or 10 μm or more. Also, the film thickness of the rewiring layer 4 may be 40 μm or less, 30 μm or less, or 20 μm or less.

When the semiconductor device 1 is viewed from above (as viewed from arrow A), it is as shown in FIG. 2 below. Incidentally, the sealing material 3 is omitted.

The semiconductor device 1 shown in FIG. 2 is configured such that the area S1 of the rewiring layer 4 is larger than the area S2 of the semiconductor chip 2 . The area S1 of the rewiring layer 4 is not particularly limited, but from the viewpoint of increasing the number of external connection terminals, the area S1 of the rewiring layer 4 should be at least 1.05 times the area S2 of the semiconductor chip 2. is preferably 1.1 times or more, more preferably 1.2 times or more, and particularly preferably 1.3 times or more. Although there is no particular upper limit, the area S1 of the rewiring layer 4 may be 50 times or less, 25 times or less, or 10 times or less the area S2 of the semiconductor chip 2. It may be 5 times or less. 2, the area of the portion of the rewiring layer 4 covered with the semiconductor chip 2 is also included in the area S1 of the rewiring layer 4. As shown in FIG.

Also, the external shapes of the semiconductor chip 2 and the rewiring layer 4 may be the same or different. In FIG. 2, the external shapes of the semiconductor chip 2 and the rewiring layer 4 are similar rectangular shapes, but the shapes may be other than rectangular.

The rewiring layer 4 may be one layer, or may be multiple layers of two or more layers. The rewiring layer 4 includes wirings 5 and interlayer insulating films 6 filling spaces between the wirings 5 . may be included.

The wiring 5 is not particularly limited as long as it is a highly conductive member, but generally copper is used.

(sealant)
The material of the sealing material 3 is not particularly limited, but epoxy resin is preferable from the viewpoint of heat resistance and adhesion to the interlayer insulating film.

As shown in FIG. 1, it is preferable that the sealing material 3 is in direct contact with the semiconductor chip 2 and the rewiring layer 4 . As a result, the sealing performance from the surface of the semiconductor chip 2 to the surface of the rewiring layer 4 can be effectively improved.

The sealing material 3 may be a single layer, or may have a structure in which a plurality of layers are laminated. When the sealing material 3 has a layered structure, it may be a layered structure of the same kind of material or a layered structure of different materials.

(Interlayer insulating film)
This embodiment is characterized in that the etching rate of the interlayer insulating film 6 during the oxygen plasma treatment is 0.05 μm/minute or more. Hereinafter, the etching rate during oxygen plasma treatment is simply referred to as "etching rate".

When the etching rate is 0.05 μm/min or more, the adhesion between the interlayer insulating film 6 and the sealing material 3 is excellent during high-temperature processing. The reason for this is not clear, but the inventors presume as follows.

In the manufacturing process of a fanout type semiconductor device, a photosensitive resin composition is applied onto a chip sealing body composed of a semiconductor chip 2 and a sealing material 3 in order to form a rewiring layer 4 . Subsequently, the photosensitive resin composition is exposed to light containing i-line. Thereafter, the photosensitive resin composition is developed and cured to selectively form a portion with and without a cured product of the photosensitive resin composition. A cured product of the photosensitive resin composition becomes the interlayer insulating film 6 . Wiring 5 is formed in a portion where there is no cured product of the photosensitive resin composition. Usually, the rewiring layer 4 is often multi-layered. That is, the photosensitive resin composition is applied, exposed, developed and cured on the interlayer insulating film 6 and the wiring 5 .

By the way, the process of forming the interlayer insulating film 6 and the wiring 5 may include a reflow process depending on the manufacturing method, and when the sealing material 3 is heated for a long time, the sealing material 3 generates gas. there's a possibility that. If the density of the interlayer insulating film 6 is high, that is, if the etching rate of the interlayer insulating film 6 is low, the gas generated from the sealing material 3 is difficult to escape. That is, the gas generated from the sealing material 3 cannot pass through the insulating film and is difficult to escape to the outside. As a result, gas accumulates at the interface between the sealing material 3 and the interlayer insulating film 6, and the sealing material 3 and the interlayer insulating film 6 are likely to separate. In particular, epoxy resins tend to generate gas due to high-temperature heat history. Therefore, it is considered that the adhesion between the interlayer insulating film 6 and the sealing material 3 is lowered when the epoxy resin is used as the sealing material 3 .

The interlayer insulating film 6 of this embodiment has a high etching rate of 0.05 microns/minute or more. Therefore, in the present embodiment, even under conditions in which gas easily escapes from the interlayer insulating film 6 and gas is likely to be generated from the sealing material 3, peeling between the interlayer insulating film 6 and the sealing material 3 is minimized, and adhesion is achieved. presumed to be highly likely.

The etching rate of the interlayer insulating film 6 is preferably 0.05 microns/minute or more, more preferably 0.06 microns/minute or more, from the viewpoint of adhesion between the interlayer insulating film and the sealing material 3 after high-temperature treatment. preferably 0.07 microns/minute or more, preferably 0.08 microns/minute or more, preferably 0.09 microns/minute or more, preferably 0.10 microns/minute or more preferably 0.15 microns/minute or more, preferably 0.20 microns/minute or more, preferably 0.25 microns/minute or more, 0.30 microns/minute or more minutes or longer.

The upper limit of the etching rate of the interlayer insulating film 6 is not particularly limited, but may be 3.0 microns/minute or less, 2.0 microns/minute or less, or 1.0 microns/minute. minutes or less, 0.8 microns/minute or less, or 0.6 microns/minute or less.

Also, the interlayer insulating film 6 in the rewiring layer 4 may be multi-layered. That is, when the rewiring layer 4 is viewed in cross section, the rewiring layer 4 includes the first interlayer insulating film layer, the second interlayer insulating film layer, and the first interlayer insulating film layer and the second interlayer insulating film layer. An intermediate layer provided between the first interlayer insulating film layer and the second interlayer insulating film layer may be included in a layer different from the insulating film layer. The intermediate layer is the wiring 5, for example.

The first interlayer insulating film layer and the second interlayer insulating film layer may have the same composition or may have different compositions. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same etching rate or different etching rates. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same film thickness or may have different film thicknesses. If the first interlayer insulating film layer and the second interlayer insulating film layer have different compositions, different etching rates, and different film thicknesses, each interlayer insulating film layer can have different properties, which is preferable.

When the interlayer insulating film 6 is multi-layered, the etching rate of at least one layer of the interlayer insulating film 6 among the plurality of layers should be 0.05 microns/minute or more. It is preferable that the etching rate of the interlayer insulating film 6 of the interlayer insulating film layer in contact with the sealing material 3 is 0.05 μm/minute or more because the gap is easily peeled off by the gas. If the etching rate of the interlayer insulating film 6 of the interlayer insulating film layer in contact with the sealing material 3 is 0.05 μm/min or more, the gas generated in the sealing material 3 can be removed efficiently. A preferable refractive index difference of each interlayer insulating film layer is the same as a preferable etching rate of the interlayer insulating film 6 .

(Composition of interlayer insulating film)
Although the composition of the interlayer insulating film 6 is not particularly limited, it is preferably a film containing at least one compound selected from polyimide, polybenzoxazole, and polymers having phenolic hydroxyl groups, for example.

(Resin composition for forming interlayer insulating film)
The resin composition used for forming the interlayer insulating film 6 is not particularly limited as long as it is a photosensitive resin composition, and is selected from polyimide precursors, polybenzoxazole precursors, or polymers having phenolic hydroxyl groups. A photosensitive resin composition containing at least one compound is preferred. The resin composition used for forming the interlayer insulating film 6 may be liquid or film. The resin composition used for forming the interlayer insulating film 6 may be a negative photosensitive resin composition or a positive photosensitive resin composition.

In the present embodiment, the pattern obtained by exposing and developing the photosensitive resin composition is referred to as a relief pattern, and the relief pattern heat-cured is referred to as a cured relief pattern. This cured relief pattern becomes the interlayer insulating film 6 .

<Polyimide precursor composition>
(A) Photosensitive resin Examples of the photosensitive resin used in the polyimide precursor composition include polyamides and polyamic acid esters. For example, a polyamic acid ester containing a repeating unit represented by the following general formula (11) can be used as the polyamic acid ester.

Ｒ^１及びＲ^２は、それぞれ独立に、水素原子、炭素数１～３０の飽和脂肪族基、芳香族基、炭素炭素不飽和二重結合を有する一価の有機基、又は、炭素炭素不飽和二重結合を有する一価のイオンである。Ｘ^１は４価の有機基であり、Ｙ^１は２価の有機基であり、ｍは１以上の整数である。ｍは２以上が好ましく、５以上がより好ましい。

R ¹ and R ² are each independently a hydrogen atom, a saturated aliphatic group having 1 to 30 carbon atoms, an aromatic group, a monovalent organic group having a carbon-carbon unsaturated double bond, or a carbon-carbon unsaturated It is a singly charged ion with a double bond. X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more. m is preferably 2 or more, more preferably 5 or more.

When R ¹ and R ² in the general formula (11) are present as monovalent cations, O is negatively charged (exists as —O 2 ^— ). Moreover, X ¹ and Y ¹ may contain a hydroxyl group.

R ¹ and R ² in the general formula (11) are more preferably a monovalent organic group represented by the following general formula (12) or a monovalent organic group represented by the following general formula (13) It is a structure having an ammonium ion at the end of the group.

（一般式（１２）中、Ｒ₃、Ｒ₄及びＲ₅は、それぞれ独立に、水素原子又は炭素数１～５の有機基であり、そしてｍ₁は、１～２０の整数である。）

(In general formula (12), R ₃ , R ₄ and R ₅ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₁ is an integer of 1 to 20.)

（一般式（１３）中、Ｒ₆、Ｒ₇及びＲ₈は、それぞれ独立に、水素原子又は炭素数１～５の有機基であり、そしてｍ₂は、１～２０の整数である。）

(In general formula (13), R ₆ , R ₇ and R ₈ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₂ is an integer of 1 to 20.)

A plurality of polyamic acid esters represented by the general formula (11) may be mixed. Polyamic acid esters obtained by copolymerizing polyamic acid esters represented by general formula (11) may also be used.

X1 is not particularly limited, but from the viewpoint of adhesion between the interlayer insulating film ⁶ and the sealing material 3, X1 is preferably ^a tetravalent organic group containing an aromatic group. Specifically, X ¹ is preferably a tetravalent organic group containing at least one structure represented by the following general formulas (2) to (4).

（一般式（４）中、Ｒ₉は酸素原子、硫黄原子、２価の有機基の何れかである。）

(In general formula ( ₄ ), R9 is an oxygen atom, a sulfur atom, or a divalent organic group.)

R ₉ in general formula (4) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom. R ₉ may contain a hydroxyl group.

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, X1 is particularly preferably ^a tetravalent organic group having a structure represented by the following general formula (5).

Y1 is not particularly limited, but from the viewpoint of adhesion between the interlayer insulating film ⁶ and the sealing material 3, Y1 is preferably ^a divalent organic group containing an aromatic group. Specifically, Y ¹ is preferably a divalent organic group containing at least one structure represented by the following general formulas (6) to (8).

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are hydrogen atoms, monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different.)

（Ｒ_１４～Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１～５の１価の有機基であり、互いに異なっていても、同一であってもよい。）

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be different or the same.)

（Ｒ_２２は２価の基であり、Ｒ_２３～Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different. .)

R ₂₂ in general formula (8) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, Y1 is particularly preferably ^a divalent organic group having a structure represented by the following general formula (9).

In the above polyamic acid ester, X1 in the repeating unit is derived from the tetracarboxylic dianhydride used as ^a raw material, and Y1 is derived from the diamine used as ^a raw material.

Examples of tetracarboxylic dianhydrides used as raw materials include pyromellitic anhydride, diphenyl ether-3,3′,4,4′-tetracarboxylic dianhydride, benzophenone-3,3′,4,4′- tetracarboxylic dianhydride, biphenyl-3,3′,4,4′-tetracarboxylic dianhydride, diphenylsulfone-3,3′,4,4′-tetracarboxylic dianhydride, diphenylmethane-3, 3′,4,4′-tetracarboxylic dianhydride, 2,2-bis(3,4-phthalic anhydride) propane, 2,2-bis(3,4-phthalic anhydride)-1,1, Examples include, but are not limited to, 1,3,3,3-hexafluoropropane. Moreover, these may be used alone or in combination of two or more.

Diamines used as raw materials include, for example, p-phenylenediamine, m-phenylenediamine, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, 4,4′-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 4,4 '-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'- Diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis (3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]sulfone, bis[4-(3-aminophenoxy)phenyl]sulfone, 4,4-bis(4-aminophenoxy)biphenyl, 4 , 4-bis(3-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenyl ) benzene, 1,3-bis(4-aminophenyl)benzene, 9,10-bis(4-aminophenyl)anthracene, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4- aminophenyl)hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)phenyl)propane, 2,2-bis[4-(4-aminophenoxy)phenyl)hexafluoropropane, 1,4-bis (3-aminopropyldimethylsilyl)benzene, ortho-tolysine sulfone, 9,9-bis(4-aminophenyl)fluorene and the like. Also, some of the hydrogen atoms on these benzene rings may be substituted. Moreover, these may be used alone or in combination of two or more.

In the synthesis of the polyamic acid ester (A), a method in which a tetracarboxylic acid diester obtained by performing an esterification reaction of a tetracarboxylic acid dianhydride, which will be described later, is usually subjected to a condensation reaction with a diamine can be preferably used. .

Alcohols used in the esterification reaction of the tetracarboxylic dianhydride are alcohols having an olefinic double bond. Specific examples include 2-hydroxyethyl methacrylate, 2-methacryloyloxyethyl alcohol, glycerin diacrylate, glycerin dimethacrylate and the like, but are not limited to these. These alcohols can be used singly or in combination of two or more.

A conventionally known method can be adopted as a specific method for synthesizing the polyamic acid ester (A) used in the present embodiment. Synthetic methods include, for example, the method disclosed in International Publication No. 00/43439 pamphlet. That is, a tetracarboxylic acid diester is once converted to a tetracarboxylic acid diester diacid chloride, the tetracarboxylic acid diester diacid chloride and a diamine are subjected to a condensation reaction in the presence of a basic compound, and polyamic acid ester (A) is obtained. can be exemplified. Moreover, the method of manufacturing polyamic-acid ester (A) by the method of subjecting a tetracarboxylic-acid diester and diamine to a condensation reaction in presence of an organic dehydrating agent can be mentioned.

Examples of organic dehydrating agents include dicyclohexylcarbodiimide (DCC), diethylcarbodiimide, diisopropylcarbodiimide, ethylcyclohexylcarbodiimide, diphenylcarbodiimide, 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide, 1-cyclohexyl-3-(3 -dimethylaminopropyl)carbodiimide hydrochloride and the like.

The weight average molecular weight of the polyamic acid ester (A) used in this embodiment is preferably 6,000 to 150,000, more preferably 7,000 to 50,000, and more preferably 7,000 to 20,000.

(B1) Photoinitiator When the resin composition used for forming the interlayer insulating film 6 is a negative photosensitive resin, a photoinitiator is added. Photoinitiators include, for example, benzophenone, methyl o-benzoylbenzoate, 4-benzoyl-4′-methyldiphenyl ketone, dibenzyl ketone, and benzophenone derivatives such as fluorenone, 2,2′-diethoxyacetophenone, and 2 - acetophenone derivatives such as hydroxy-2-methylpropiophenone, thioxanthone derivatives such as 1-hydroxycyclohexylphenyl ketone, thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone and diethylthioxanthone, benzyl, benzyl dimethyl ketal and benzyl- benzyl derivatives such as β-methoxyethyl acetal; benzoin derivatives such as benzoin methyl ether; azides, 1-phenyl-1,2-butanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2-(O -ethoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-benzoyl)oxime, 1,3-diphenylpropanetrione-2-(O-ethoxycarbonyl)oxime, 1-phenyl-3-ethoxypropanetrione-2 Oximes such as -(O-benzoyl)oxime, N-arylglycines such as N-phenylglycine, peroxides such as benzoyl peroxide, aromatic biimidazoles, and titanocenes are used. Among these, the above oximes are preferable from the viewpoint of photosensitivity.

The amount of these photoinitiators added is preferably 1 to 40 parts by mass, more preferably 2 to 20 parts by mass, per 100 parts by mass of the polyamic acid ester (A). By adding 1 part by mass or more of the photoinitiator to 100 parts by mass of the polyamic acid ester (A), the photosensitivity is excellent. Further, by adding 40 parts by mass or less, the thick film curability is excellent.

(B2) Photoacid Generator When the resin composition used for forming the interlayer insulating film 6 is a positive photosensitive resin, a photoacid generator is added. By including a photoacid generator, an acid is generated in the ultraviolet-exposed area, and the solubility of the exposed area in an alkaline aqueous solution is increased. Thereby, it can be used as a positive photosensitive resin composition.

Examples of photoacid generators include quinonediazide compounds, sulfonium salts, phosphonium salts, diazonium salts, iodonium salts and the like. Among these, the quinonediazide compound is preferably used because it exhibits an excellent dissolution inhibiting effect and enables a highly sensitive positive photosensitive resin composition to be obtained. Moreover, you may contain 2 or more types of photo-acid generators.

<How to adjust the etching rate>
There is a tendency that the higher the imidization rate, the lower the etching rate, and the lower the imidization rate, the higher the etching rate. In order to lower the imidization rate, the amount of the imidization accelerator may be reduced or the temperature during heat curing may be lowered.

As the imidization accelerator, an amine compound is generally preferably used. Examples include primary amines such as aniline, secondary amines such as methylaniline, and tertiary amines such as pyridine. Among them, secondary amines and tertiary amines are preferred from the viewpoint of storage stability of the varnish. Furthermore, among them, heterocyclic amines are preferred, and piperidine, pyrrolidine, purine, pyrimidine, pyridine and derivatives thereof are more preferred.

(D) Solvent There are no particular limitations as long as each component can be dissolved or dispersed in the solvent. Examples include N-methyl-2-pyrrolidone, γ-butyrolactone, acetone, methyl ethyl ketone, dimethyl sulfoxide and the like. These solvents can be used in the range of 30 to 1500 parts by mass with respect to 100 parts by mass of the photosensitive resin (A) depending on the coating film thickness and viscosity.

(E) Others The polyimide precursor composition may contain a cross-linking agent. As the cross-linking agent, a cross-linking agent capable of cross-linking the photosensitive resin (A) or capable of forming a cross-linked network by itself is used when the polyimide precursor composition is exposed and developed and then heat-cured. be able to. By using a cross-linking agent, the heat resistance and chemical resistance of the cured film (interlayer insulating film) can be further enhanced.

In addition, it may contain a sensitizer for improving photosensitivity, an adhesion aid for improving adhesion to the substrate, and the like.

(developing)
After exposing the polyimide precursor composition, unnecessary portions are washed away with a developer. The developer to be used is not particularly limited, but in the case of a polyimide precursor composition that is developed with a solvent, N,N-dimethylformamide, dimethylsulfoxide, N,N-dimethylacetamide, N-methyl-2 Good solvents such as -pyrrolidone, cyclopentanone, γ-butyrolactone and acetic esters, mixed solvents of these good solvents with poor solvents such as lower alcohols, water and aromatic hydrocarbons are used. After development, rinsing with a poor solvent or the like is performed as necessary.

In the case of a polyimide precursor composition that is developed with an alkaline aqueous solution, an aqueous solution of tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, Aqueous solutions of alkaline compounds such as dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine and hexamethylenediamine are preferred.

(thermosetting)
After development, the polyimide precursor is ring-closed by heating to form polyimide. This polyimide becomes the cured relief pattern, that is, the interlayer insulating film 6 .

The heating temperature is not particularly limited, but generally, the lower the heat-curing temperature, the smaller the refractive index difference. From the viewpoint of manifesting the refractive index difference of less than 0.0150 in the present embodiment, the temperature is preferably 200° C. or lower, preferably 180° C. or lower, and preferably 160° C. or lower.

<Polyimide>
The structure of the cured relief pattern formed from the polyimide precursor composition is represented by the following general formula (1).

X 1 , Y ¹ , and m in general formula (1) are the same as X ¹ , Y ¹ , and m in general formula (11), where X ¹ is a tetravalent organic group and Y ¹ is ^a divalent It is an organic group, and m is an integer of 1 or more. Preferred X ¹ , Y ¹ , and m in general formula (11) are also preferred in polyimide of general formula (1) for the same reason.

In the case of alkali-soluble polyimide, the terminal of polyimide may be a hydroxyl group.

<Polybenzoxazole precursor composition>
(A) Photosensitive resin As the photosensitive resin used in the polybenzoxazole precursor composition, poly(o-hydroxyamide) containing a repeating unit represented by the following general formula (14) can be used.

（一般式（１４）中、ＵとＶは２価の有機基である。）

(In general formula (14), U and V are divalent organic groups.)

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, U is preferably a divalent organic group having 1 to 30 carbon atoms, and a chain alkylene group having 1 to 15 carbon atoms (provided that The hydrogen atoms of the chain alkylene may be substituted with halogen atoms) is more preferable, and a chain alkylene group having 1 to 8 carbon atoms and having the hydrogen atoms substituted with fluorine atoms is particularly preferable.

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, V is preferably a divalent organic group containing an aromatic group, more preferably the following general formulas (6) to It is preferably a divalent organic group containing at least one structure represented by (8).

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are hydrogen atoms, monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different.)

（Ｒ_１４～Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１～５の１価の有機基であり、互いに異なっていても、同一であってもよい。）

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be different or the same.)

（Ｒ_２２は２価の基であり、Ｒ_２３～Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different. .)

R ₂₂ in general formula (8) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, V is particularly preferably a divalent organic group having a structure represented by the following general formula (9).

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, V is preferably a divalent organic group having 1 to 40 carbon atoms, more preferably a divalent chain aliphatic group having 1 to 40 carbon atoms. Preferred are divalent chain aliphatic groups having 1 to 20 carbon atoms.

A polybenzoxazole precursor can generally be synthesized from a dicarboxylic acid derivative and a hydroxy group-containing diamine. Specifically, it can be synthesized by converting a dicarboxylic acid derivative into a dihalide derivative and then reacting it with a diamine. A dichloride derivative is preferable as the dihalide derivative.

A dichloride derivative can be synthesized by reacting a dicarboxylic acid derivative with a halogenating agent. As the halogenating agent, thionyl chloride, phosphoryl chloride, phosphorus oxychloride, phosphorus pentachloride, and the like, which are used for the acid chloride reaction of a carboxylic acid, can be used.

As a method for synthesizing the dichloride derivative, a method of reacting a dicarboxylic acid derivative and the halogenating agent in a solvent, a method of reacting in an excess of the halogenating agent and then distilling off the excess can be used.

Examples of dicarboxylic acids used for dicarboxylic acid derivatives include isophthalic acid, terephthalic acid, 2,2-bis(4-carboxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 4,4 '-dicarboxybiphenyl, 4,4'-dicarboxydiphenyl ether, 4,4'-dicarboxytetraphenylsilane, bis(4-carboxyphenyl)sulfone, 2,2-bis(p-carboxyphenyl)propane, 5- tert-butylisophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6-naphthalenedicarboxylic acid, malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n -butylmalonic acid, succinic acid, tetrafluorosuccinic acid, methylsuccinic acid, 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, hexafluoroglutaric acid, 2 -methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl-3-methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipic acid , octafluoroadipic acid, pimelic acid, 2,2,6,6-tetramethylpimelic acid, suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid, hexadecafluorosebacic acid, 1,9-nonanedioic acid , dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, hexadecanedioic acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid, heneicosanedioic acid, docosanedioic acid, tricosanedioic acid, tetracosane diacid, pentacosanedioic acid, hexacosanedioic acid, heptacosanedioic acid, octacosanedioic acid, nonacosanedioic acid, triacontanedioic acid, hentriacontanedioic acid, dotriacontanedioic acid, diglycolic acid, and the like. A mixture of these may be used.

Examples of hydroxy group-containing diamines include 3,3′-diamino-4,4′-dihydroxybiphenyl, 4,4′-diamino-3,3′-dihydroxybiphenyl, and bis(3-amino-4-hydroxyphenyl). Propane, bis(4-amino-3-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)sulfone, bis(4-amino-3-hydroxyphenyl)sulfone, 2,2-bis(3-amino -4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 2,2-bis(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3 - hexafluoropropane and the like. A mixture of these may be used.

(B2) Photo-acid generator The photo-acid generator has the function of increasing the solubility of the light-irradiated portion in an alkaline aqueous solution. Examples of photoacid generators include diazonaphthoquinone compounds, aryldiazonium salts, diaryliodonium salts, triarylsulfonium salts and the like. Among these, diazonaphthoquinone compounds are preferred because of their high sensitivity.

<How to adjust the etching rate>
There is a tendency that the higher the cyclization rate of polybenzoxazole, the lower the etching rate, and the lower the cyclization rate, the higher the etching rate.

In order to lower the cyclization rate, the amount of the cyclization accelerator may be reduced or the temperature during heat curing may be lowered.

Cyclization promoters include, for example, sulfonic acid and phosphoric anhydride. Among them, p-toluenesulfonic acid is preferable from the viewpoint of the storage stability of the varnish.

(D) Solvent There are no particular limitations as long as the solvent is capable of dissolving or dispersing each component.

(E) Others The polybenzoxazole precursor composition can contain a cross-linking agent, a sensitizer, an adhesion aid, a thermal acid generator, and the like.

(developing)
After exposing the polybenzoxazole precursor composition, unwanted portions are washed away with a developer. The developer to be used is not particularly limited, but alkaline aqueous solutions such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine and tetramethylammonium hydroxide are preferred. It is mentioned as.

Although the positive-type polybenzoxazole precursor composition has been mainly described above, it may be a negative-type polybenzoxazole precursor composition.

(thermosetting)
After development, the polybenzoxazole precursor is ring-closed by heating to form polybenzoxazole. This polybenzoxazole becomes the cured relief pattern, that is, the interlayer insulating film 6 .

The heating temperature is not particularly limited, but from the viewpoint of the influence on other members, the heating temperature is preferably a low temperature. 250 degrees or less is preferable, 230 degrees or less is more preferable, 200 degrees or less is more preferable, and 180 degrees or less is particularly preferable.

<Polybenzoxazole>
The structure of the cured relief pattern formed from the polybenzoxazole precursor composition is represented by the following general formula (10).

U and V in general formula (10) are the same as U and V in general formula (14). Preferred U and V in general formula (14) are also preferred in polybenzoxazole of general formula (10) for the same reason.

<Polymer having a phenolic hydroxyl group>
(A) Photosensitive resin A resin having a phenolic hydroxyl group in its molecule and soluble in alkali. Specific examples thereof include vinyl polymers containing monomer units having phenolic hydroxyl groups such as poly(hydroxystyrene), phenol resins, poly(hydroxyamides), poly(hydroxyphenylene) ethers, and polynaphthols.

Among these, phenolic resins are preferred, and novolak-type phenolic resins are particularly preferred, because of their low cost and small volume shrinkage during curing.

Phenolic resins are polycondensation products of phenol or its derivatives and aldehydes. Polycondensation is carried out in the presence of a catalyst such as an acid or base. A phenolic resin obtained when an acid catalyst is used is particularly called a novolak-type phenolic resin.

Phenol derivatives include, for example, phenol, cresol, ethylphenol, propylphenol, butylphenol, amylphenol, benzylphenol, adamantanephenol, benzyloxyphenol, xylenol, catechol, resorcinol, ethylresorcinol, hexylresorcinol, hydroquinone, pyrogallol, phlorolog Rucinol, 1,2,4-trihydroxybenzene, pararosolic acid, biphenol, bisphenol A, bisphenol AF, bisphenol B, bisphenol F, bisphenol S, dihydroxydiphenylmethane, 1,1-bis(4-hydroxyphenyl)cyclohexane, 1, 4-bis(3-hydroxyphenoxybenzene), 2,2-bis(4-hydroxy-3-methylphenyl)propane, α,α'-bis(4-hydroxyphenyl)-1,4-diisopropylbenzene, 9, 9-bis(4-hydroxy-3-methylphenyl)fluorene, 2,2-bis(3-cyclohexyl-4-hydroxyphenyl)propane, 2,2-bis(2-hydroxy-5-biphenylyl)propane, dihydroxy benzoic acid and the like.

Aldehyde compounds include formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, pivalaldehyde, butyraldehyde, pentanal, hexanal, trioxane, glyoxal, cyclohexylaldehyde, diphenylacetaldehyde, ethylbutyraldehyde, benzaldehyde, glyoxylic acid, 5-norbornene-2. - carboxaldehyde, malondialdehyde, succindialdehyde, glutaraldehyde, salicylaldehyde, naphthaldehyde, terephthalaldehyde and the like.

The component (A) preferably contains (a) a phenolic resin having no unsaturated hydrocarbon group and (b) a modified phenolic resin having an unsaturated hydrocarbon group. It is more preferable that the component (b) is further modified by a reaction between a phenolic hydroxyl group and a polybasic acid anhydride.

As the component (b), a phenolic resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms is used from the viewpoint of further improving mechanical properties (elongation at break, elastic modulus and residual stress). is preferred.

(b) Modified phenolic resin having an unsaturated hydrocarbon group is generally a compound having phenol or a derivative thereof and an unsaturated hydrocarbon group (preferably those having 4 to 100 carbon atoms) (hereinafter sometimes simply referred to as "unsaturated (hereinafter referred to as "unsaturated hydrocarbon group-modified phenol derivative") and condensation polymerization products of aldehydes, or phenolic resin and unsaturated hydrocarbon It is a reaction product with a group-containing compound.

The phenol derivative referred to herein can be the same as the phenol derivative described above as a raw material for the phenol resin as the component (A).

The unsaturated hydrocarbon group of the unsaturated hydrocarbon group-containing compound preferably contains two or more unsaturated groups from the viewpoint of resist pattern adhesion and thermal shock resistance. Further, from the viewpoint of compatibility and flexibility of the cured film when made into a resin composition, the unsaturated hydrocarbon group-containing compound preferably has 8 to 80 carbon atoms, more preferably 10 to 60 carbon atoms. preferable.

Examples of unsaturated hydrocarbon group-containing compounds include unsaturated hydrocarbons having 4 to 100 carbon atoms, polybutadiene having a carboxyl group, epoxidized polybutadiene, linolyl alcohol, oleyl alcohol, unsaturated fatty acids, and unsaturated fatty acid esters. . Suitable unsaturated fatty acids include crotonic acid, myristoleic acid, palmitoleic acid, oleic acid, elaidic acid, vaccenic acid, gadoleic acid, erucic acid, nervonic acid, linoleic acid, α-linolenic acid, eleostearic acid, stearidone. acids, arachidonic acid, eicosapentaenoic acid, sardine acid and docosahexaenoic acid. Among these, esters of unsaturated fatty acids having 8 to 30 carbon atoms and monohydric to trihydric alcohols having 1 to 10 carbon atoms are particularly preferable, and unsaturated fatty acids having 8 to 30 carbon atoms and trihydric alcohols are more preferable. Esters with glycerin are particularly preferred.

Esters of unsaturated fatty acids having 8 to 30 carbon atoms and glycerin are commercially available as vegetable oils. Vegetable oils include non-drying oils with an iodine value of 100 or less, semi-drying oils with an iodine value of more than 100 and less than 130, and drying oils with an iodine value of 130 or more. Non-drying oils include, for example, olive oil, morning glory seed oil, cashew seed oil, turmeric oil, camellia oil, castor oil and peanut oil. Semi-drying oils include, for example, corn oil, cottonseed oil and sesame oil. Drying oils include, for example, tung oil, linseed oil, soybean oil, walnut oil, safflower oil, sunflower oil, perilla oil and mustard oil. Moreover, you may use the processed vegetable oil obtained by processing these vegetable oils.

Among the above vegetable oils, it is preferable to use a non-drying oil in the reaction of phenol or its derivative or phenol resin with vegetable oil, from the viewpoint of preventing gelation due to excessive progress of the reaction and improving the yield. On the other hand, it is preferable to use a drying oil from the viewpoint of improving the adhesion of the resist pattern, mechanical properties and thermal shock resistance. Among the drying oils, tung oil, linseed oil, soybean oil, walnut oil and safflower oil are preferred, and tung oil and linseed oil are more preferred, since the effects of the present invention can be exhibited more effectively and reliably.

These unsaturated hydrocarbon group-containing compounds are used singly or in combination of two or more.

In preparing the component (b), first, the phenol derivative and the unsaturated hydrocarbon group-containing compound are reacted to produce an unsaturated hydrocarbon group-modified phenol derivative. The reaction is preferably carried out at 50-130°C. From the viewpoint of improving the flexibility of the cured film (resist pattern), the reaction ratio between the phenol derivative and the unsaturated hydrocarbon group-containing compound is 1 to 100 parts by mass of the unsaturated hydrocarbon group-containing compound per 100 parts by mass of the phenol derivative. It is preferably parts by mass, more preferably 5 to 50 parts by mass. If the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the cured film tends to be less flexible, and if it exceeds 100 parts by mass, the cured film tends to be less heat resistant. In the above reaction, p-toluenesulfonic acid, trifluoromethanesulfonic acid or the like may be used as a catalyst, if necessary.

By polycondensing the unsaturated hydrocarbon group-modified phenol derivative produced by the above reaction and aldehydes, a phenol resin modified with an unsaturated hydrocarbon group-containing compound is produced. As the aldehydes, the same aldehydes as those mentioned above for obtaining the phenolic resin can be used.

The reaction between the aldehyde and the unsaturated hydrocarbon group-modified phenol derivative is a polycondensation reaction, and conventionally known synthesis conditions for phenol resins can be used. The reaction is preferably carried out in the presence of a catalyst such as acid or base, more preferably using an acid catalyst. Acid catalysts include, for example, hydrochloric acid, sulfuric acid, formic acid, acetic acid, p-toluenesulfonic acid and oxalic acid. These acid catalysts can be used singly or in combination of two or more.

The above reaction is usually preferably carried out at a reaction temperature of 100 to 120°C. The reaction time varies depending on the type and amount of catalyst used, but is usually 1 to 50 hours. After completion of the reaction, the reaction product is dehydrated under reduced pressure at a temperature of 200° C. or lower to obtain a phenolic resin modified with an unsaturated hydrocarbon group-containing compound. A solvent such as toluene, xylene, or methanol can be used for the reaction.

A phenolic resin modified with an unsaturated hydrocarbon group-containing compound can also be obtained by polycondensing the above unsaturated hydrocarbon group-modified phenol derivative with a compound other than phenol such as m-xylene with an aldehyde. . In this case, the molar ratio of the compound other than phenol to the compound obtained by reacting the phenol derivative and the unsaturated hydrocarbon group-containing compound is preferably less than 0.5.

Component (b) can also be obtained by reacting the phenolic resin of component (a) with an unsaturated hydrocarbon group-containing compound.

As the unsaturated hydrocarbon group-containing compound to be reacted with the phenolic resin, the same unsaturated hydrocarbon group-containing compound as described above can be used.

The reaction between the phenol resin and the unsaturated hydrocarbon group-containing compound is usually preferably carried out at 50 to 130°C. In addition, from the viewpoint of improving the flexibility of the cured film (resist pattern), the reaction ratio between the phenolic resin and the unsaturated hydrocarbon group-containing compound is 1 part of the unsaturated hydrocarbon group-containing compound per 100 parts by mass of the phenolic resin. It is preferably up to 100 parts by mass, more preferably 2 to 70 parts by mass, even more preferably 5 to 50 parts by mass. If the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the possibility of gelation during the reaction tends to increase and curing The heat resistance of the film tends to decrease. At this time, if necessary, p-toluenesulfonic acid, trifluoromethanesulfonic acid, or the like may be used as a catalyst. Solvents such as toluene, xylene, methanol, and tetrahydrofuran can be used for the reaction.

The phenolic hydroxyl groups remaining in the phenol resin modified by the unsaturated hydrocarbon group-containing compound produced by the above method are further reacted with a polybasic acid anhydride. As a result, an acid-modified phenolic resin can be used as the component (b). Acid modification with a polybasic acid anhydride introduces a carboxy group, further improving the solubility of component (b) in an alkaline aqueous solution (developer).

The polybasic acid anhydride is not particularly limited as long as it has an acid anhydride group formed by dehydration condensation of the carboxy groups of a polybasic acid having a plurality of carboxy groups. Examples of polybasic acid anhydrides include phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride. Acids, dibasic acid anhydrides such as methylhexahydrophthalic anhydride, nadic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride and trimellitic anhydride, biphenyl Tetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenyl ether tetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic anhydride and benzophenonetetracarboxylic dianhydride Aromatic tetrabasic acid dianhydrides such as anhydrides can be mentioned. You may use these individually by 1 type or in combination of 2 or more types. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably one or more selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride and hexahydrophthalic anhydride. . In this case, there is an advantage that a resist pattern having a better shape can be formed.

In addition, (A) the alkali-soluble resin having a phenolic hydroxyl group can further contain a phenolic resin that has been acid-modified by reacting with a polybasic acid anhydride. Since the component (A) contains a phenolic resin modified with a polybasic acid anhydride, the solubility of the component (A) in an alkaline aqueous solution (developer) is further improved.

Examples of the polybasic acid anhydride include phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methyltetrahydroanhydride. dibasic acid anhydrides such as phthalic acid, methylhexahydrophthalic anhydride, nadic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride, and trimellitic anhydride; Biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenyl ether tetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic anhydride, benzophenonetetracarboxylic acid Aliphatic such as dianhydride, aromatic tetrabasic acid dianhydride, and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, for example, one or more selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride and hexahydrophthalic anhydride. more preferred.

(B2) Photoacid Generator Examples of photoacid generators include diazonaphthoquinone compounds, aryldiazonium salts, diaryliodonium salts, and triarylsulfonium salts. Among these, diazonaphthoquinone compounds are preferred because of their high sensitivity.

<How to adjust the etching rate>
As the thermal cross-linking rate of phenol increases, the etching rate decreases, and as the thermal cross-linking rate decreases, the etching rate increases.

In order to lower the thermal cross-linking rate, the amount of the thermal cross-linking accelerator may be reduced or the temperature during thermosetting may be lowered.

Examples of thermal cross-linking accelerators include epoxy compounds, oxetane compounds, oxazoline compounds, aldehydes, modified aldehydes, isocyanate compounds, unsaturated bond-containing compounds, polyhydric alcohol compounds, polyvalent amine compounds, melamine compounds, metal chelating agents, C-methylol compounds, N-methylol compounds and the like are preferably used.

(D) Solvent There are no particular limitations as long as the solvent is capable of dissolving or dispersing each component.

(E) Others Thermal cross-linking agents, sensitizers, adhesion aids, dyes, surfactants, dissolution accelerators, cross-linking accelerators and the like can be included. Among these, by containing a thermal cross-linking agent, when the photosensitive resin film after pattern formation is heated and cured, the thermal cross-linking agent component reacts with the component (A) to form a crosslinked structure. This makes it possible to cure at a low temperature, and prevents fragility of the film and melting of the film. Specifically, a compound having a phenolic hydroxyl group, a compound having a hydroxymethylamino group, and a compound having an epoxy group can be preferably used as the thermal cross-linking agent component.

(developing)
After exposing the polymer having phenolic hydroxyl groups, unwanted portions are washed away with a developer. The developer to be used is not particularly limited, but examples thereof include alkaline aqueous solutions such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide (TMAH). is preferably used.

(thermosetting)
After development, the polymers having phenolic hydroxyl groups are thermally crosslinked by heating. The crosslinked polymer becomes the cured relief pattern, that is, the interlayer insulating film 6 .

The heating temperature is not particularly limited, but from the viewpoint of the influence on other members, the heating temperature is preferably a low temperature. 250 degrees or less is preferable, 230 degrees or less is more preferable, 200 degrees or less is more preferable, and 180 degrees or less is particularly preferable.

(Method for manufacturing semiconductor device)
A method for manufacturing a semiconductor device according to this embodiment will be described with reference to FIG. In FIG. 3A, a pre-processed wafer 10 is prepared. Then, in FIG. 3B, the pre-processed wafer 10 is diced to form a plurality of semiconductor chips 2 . The semiconductor chip 2 may be a purchased item. The semiconductor chips 2 prepared in this manner are attached on a support 11 at predetermined intervals, as shown in FIG. 3C.

Subsequently, a mold resin 12 is applied from the semiconductor chip 2 to the support 11, and the semiconductor chip 2 and the support 11 are molded and sealed as shown in FIG. 3D. Subsequently, the support 11 is peeled off, and the mold resin 12 is turned over (see FIG. 3E). As shown in FIG. 3E, the semiconductor chip 2 and the mold resin 12 appear on substantially the same plane. Subsequently, in the step shown in FIG. 3F, a photosensitive resin composition 13 is applied onto the semiconductor chip 2 and the mold resin 12 . Then, the applied photosensitive resin composition 13 is exposed and developed to form a relief pattern (relief pattern forming step). Incidentally, the photosensitive resin composition 13 may be either positive type or negative type. Furthermore, the relief pattern is heated to form a cured relief pattern (interlayer insulating film forming step). Further, wiring is formed at locations where no cured relief pattern is to be formed (wiring forming step).

In this embodiment, the relief pattern forming process, the interlayer insulating film forming process, and the wiring forming process are combined into a rewiring layer forming process for forming a rewiring layer connected to the semiconductor chip 2 .

The interlayer insulating film in the rewiring layer may be multi-layered. Therefore, the rewiring layer forming process may include a plurality of relief pattern forming processes, a plurality of interlayer insulating film forming processes, and a plurality of wiring forming processes.

Then, in FIG. 3G, a plurality of external connection terminals 7 corresponding to each semiconductor chip 2 are formed (bump formation), and the semiconductor chips 2 are diced. Thereby, as shown in FIG. 3H, a semiconductor device (semiconductor IC) 1 can be obtained. In this embodiment, a plurality of fan-out type semiconductor devices 1 can be obtained by the manufacturing method shown in FIG.

In this embodiment, the etching rate of the cured relief pattern (interlayer insulating film) formed through the above steps can be 0.05 microns/minute or more.

In the present embodiment, in the step of forming an interlayer insulating film, the interlayer insulating film may be formed from a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. preferable.

EXAMPLES Examples carried out to clarify the effects of the present invention will be described below. In the examples, the following materials and measurement methods were used.

EXAMPLES Examples carried out to clarify the effects of the present invention will be described below.

(Polymer A-1: Synthesis of polyimide precursor)
4,4′-Oxydiphthalic dianhydride (ODPA) was placed in a 2-liter separable flask as a tetracarboxylic dianhydride. Further, 2-hydroxyethyl methacrylate (HEMA) and γ-butyrolactone were added and stirred at room temperature, and pyridine was added while stirring to obtain a reaction mixture. After the end of heat generation due to the reaction, the mixture was allowed to cool to room temperature and allowed to stand for 16 hours.

Next, under ice-cooling, a solution of dicyclohexylcarbodiimide (DCC) dissolved in γ-butyrolactone was added to the reaction mixture over 40 minutes while stirring. Subsequently, a suspension of 4,4'-diaminodiphenyl ether (DADPE) as a diamine in γ-butyrolactone was added with stirring over 60 minutes. Further, after stirring at room temperature for 2 hours, ethyl alcohol was added and stirred for 1 hour, then γ-butyrolactone was added. A precipitate formed in the reaction mixture was removed by filtration to obtain a reaction liquid.

The resulting reaction solution was added to ethyl alcohol to form a precipitate consisting of a crude polymer. The resulting crude polymer was separated by filtration and dissolved in tetrahydrofuran to obtain a crude polymer solution. The resulting crude polymer solution was dropped into water to precipitate the polymer, and the resulting precipitate was filtered and dried in vacuum to obtain a powdery polymer (polyimide precursor (polymer A-1)). . The masses of the compounds used in Component A-1 are shown in Table 1 below.

(Synthesis of polymers A-2 to A-3)
Except for changing the tetracarboxylic dianhydride and diamine as shown in Table 1 below, the reaction was performed in the same manner as described for the polymer A-1 described above to obtain polyimide precursors (polymers A-2 to A-4). got

(Polymer B-1: Synthesis of polybenzoxazole precursor)
A 0.5-liter flask equipped with a stirrer and a thermometer was charged with 15.48 g of 4,4′-diphenyletherdicarboxylic acid as a dicarboxylic acid and N-methylpyrrolidone. After cooling the flask to 5° C., thionyl chloride was added dropwise and allowed to react for 30 minutes to obtain a solution of dicarboxylic acid chloride. Then, N-methylpyrrolidone was charged into a 0.5 liter flask equipped with a stirrer and a thermometer. After stirring and dissolving 18.30 g of bis(3-amino-4-hydroxyphenyl)hexafluoropropane as bisaminophenol and 2.18 g of m-aminophenol, pyridine was added. Then, while maintaining the temperature at 0 to 5° C., the dicarboxylic acid chloride solution was added dropwise over 30 minutes, and then stirring was continued for 30 minutes. The solution was poured into 3 liters of water, and the precipitate was collected, washed with pure water three times, and dried under reduced pressure to obtain a polymer (polybenzoxazole precursor (polymer B-1)). The masses of the compounds used in Polymer B-1 are shown in Table 1 below.

(Synthesis of Polymer B-2)
Except for changing the dicarboxylic acid and bisaminophenol as shown in Table 1 below, the reaction was carried out in the same manner as described for Polymer B-1 to obtain a polybenzoxazole precursor (Polymer B-2). rice field.

(Polymer C-1: Synthesis of phenolic resin)
A phenolic resin containing 85 g of C1 resin shown below and 15 g of C2 resin shown below was prepared as polymer C-1.
C1: cresol novolak resin (cresol/formaldehyde novolak resin, m-cresol/p-cresol (molar ratio) = 60/40, weight average molecular weight in terms of polystyrene = 12,000, manufactured by Asahi Organic Chemicals Industry Co., Ltd., trade name "EP4020G" )

C2: C2 was synthesized as follows.
<C2: Synthesis of phenolic resin modified with a compound having an unsaturated hydrocarbon group with 4 to 100 carbon atoms>
100 parts by mass of phenol, 43 parts by mass of linseed oil and 0.1 part by mass of trifluoromethanesulfonic acid were mixed and stirred at 120°C for 2 hours to obtain a vegetable oil-modified phenol derivative (a). Next, 130 g of vegetable oil-modified phenol derivative (a), 16.3 g of paraformaldehyde and 1.0 g of oxalic acid were mixed and stirred at 90° C. for 3 hours. Then, after heating to 120° C. and stirring under reduced pressure for 3 hours, 29 g of succinic anhydride and 0.3 g of triethylamine were added to the reaction solution, and the mixture was stirred at 100° C. for 1 hour under atmospheric pressure. The reaction solution was cooled to room temperature, and a phenolic resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms (hereinafter referred to as "C2 resin") was obtained as a reaction product (acid value: 120 mg KOH /g).

(Synthesis of Polymer C-2)
100 g of the following C1 resin was prepared as polymer C-2.

[Examples 1 to 7, Comparative Examples 1 to 2]
A solution of a photosensitive resin composition was obtained by blending as shown in Table 2 below. In addition, the unit of Table 2 is a mass part.

Using the compounds shown in Table 2 and the amounts shown in Tables 3 and 4, photosensitive resin compositions of Examples 1 to 7 and Comparative Examples 1 and 2 were prepared.

The prepared photosensitive resin composition was subjected to (1) an etching rate measurement test during oxygen plasma treatment, (2) a reflow resistance test of the encapsulant, and (3) an adhesion test with the encapsulant. The results of each test are shown in Table 3 below.

(1) Etching Rate Measurement Test During Oxygen Plasma Treatment Using the photosensitive resin compositions prepared in Examples and Comparative Examples, semiconductor devices of fan-out wafer level chip size package type were prepared. An interlayer insulating film having a thickness of 10 μm was taken out as cleanly as possible from the manufactured semiconductor device. The interlayer insulating film taken out was treated for 3 minutes under conditions of 133 W and 50 Pa using an EXAM apparatus manufactured by Shinko Electric Co., Ltd., and the etching rate during the oxygen plasma treatment was measured by measuring the film thickness before and after the treatment. .

(2) Reflow Resistance Test of Encapsulating Material R4000 series manufactured by Nagase Chemtex Co., Ltd. was prepared as an epoxy-based encapsulating material. Next, the encapsulant was spin-coated on the aluminum-sputtered silicon wafer to a thickness of about 150 microns, and thermally cured at 130° C. to cure the epoxy-based encapsulant. The photosensitive resin compositions prepared in Examples and Comparative Examples were coated on the epoxy-based cured film so that the final film thickness was 10 microns. The coated photosensitive resin composition was exposed to light of 200 mJ/cm ² for Examples 1 to 3 and Comparative Example 1, and 500 mJ/cm ² for Examples 4 and 5 and Comparative Example 2. C. for 4 hours to prepare a first cured film having a thickness of 10 microns.

The photosensitive resin composition used in forming the cured film of the first layer is applied onto the cured film of the first layer, and the entire surface is exposed to light under the same conditions as when forming the cured film of the first layer, followed by thermal curing. , to prepare a second cured film having a thickness of 10 microns.

Under simulated solder reflow conditions using a mesh belt type continuous firing furnace (manufactured by Koyo Thermo Systems Co., Ltd., model name 6841-20AMC-36), the test piece after the formation of the second layer of cured film was subjected to peak temperature under a nitrogen atmosphere. Heated to 260°C. The simulated reflow conditions refer to the solder reflow conditions described in Section 7.6 of IPC/JEDEC J-STD-020A, which is the standard of the US semiconductor industry group for evaluation methods of semiconductor devices, and the melting point of the solder is adjusted. Normalized assuming a high temperature of 220°C.

After cutting the cross section of the cured film after treatment under the simulated reflow conditions with an FIB device (manufactured by JEOL Ltd., JIB-4000), the degree of deterioration was evaluated by checking for the presence or absence of voids in the epoxy portion. . A sample with no voids was rated as ◯, and a sample with at least one void was rated as x.

(3) Adhesion test with sealing material A pin is placed on the photosensitive resin cured film of the sample prepared in the test of (2), and the adhesion is measured using a take-off tester (Sebastian 5, manufactured by Quad Group). did the test.
Evaluation: Adhesion strength of 70 MPa or more ・・・・・・・・ Adhesion ◎
50 MPa or more - less than 70 MPa ... Adhesion ○
30 MPa or more and less than -50 MPa ... Adhesion △
Less than 30 MPa ・・・・・・・Adhesion ×

Using the photosensitive resin compositions described in Examples 1 to 7, a fan-out type wafer level chip size package type semiconductor device containing an epoxy resin as a molding resin was produced and operated without any problem.

The present invention is preferably applied to a semiconductor device having a semiconductor chip and a rewiring layer connected to the semiconductor chip, particularly to a fan-out type wafer level chip size package type semiconductor device.

1 semiconductor device 2 semiconductor chip 3 sealing material 4 rewiring layer 5 wiring 6 interlayer insulating film 7 external connection terminal 10 wafer 11 support 12 mold resin 13 photosensitive resin composition

Claims (33)

a semiconductor chip;
a sealing material;
a rewiring layer having a larger area than the semiconductor chip in plan view,
The sealing material is in direct contact with an interlayer insulating film of the rewiring layer,
A semiconductor device, wherein an etching rate of said interlayer insulating film during oxygen plasma treatment is 0.05 microns/minute or more and 0.8 microns/minute or less. 2. The semiconductor device according to claim 1, wherein said sealing material contains epoxy resin. 3. The semiconductor device according to claim 1, wherein said interlayer insulating film contains at least one selected from polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. 4. The semiconductor device according to claim 3, wherein said interlayer insulating film contains polyimide having a structure represented by the following general formula (1).

(In general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more.) X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring,
5. The semiconductor device according to claim 4, wherein Y1 in said general formula ( ¹ ) is a divalent organic group containing an aromatic ring. The semiconductor according to claim 4 or 5, wherein X ¹ in the general formula (1) includes at least one structure represented by the following general formulas (2) to (4) Device.

(In general formula ( ₄ ), R9 is an oxygen atom, a sulfur atom, or a divalent organic group.) 7. The semiconductor device according to claim 6, wherein X1 in the general formula ( ¹ ) includes a structure represented by the following general formula (5).

Any one of claims 4 to 7, wherein Y ¹ in the general formula (1) includes at least one structure represented by the following general formulas (6) to (8) The semiconductor device described.

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms or a hydroxyl group, and may be the same or different.)

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms or a hydroxyl group, and may be different or the same.)

(R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different. is also good.) 9. The semiconductor device according to claim 8, wherein Y1 in the general formula ( ¹ ) includes a structure represented by the following general formula (9).

4. The semiconductor device according to claim 3, wherein the polybenzoxazole contains a polybenzoxazole having a structure represented by the following general formula (10).

(In general formula (10), U and V are divalent organic groups.) 11. The semiconductor device according to claim 10, wherein U in said general formula (10) is a divalent organic group having 1 to 30 carbon atoms. 12. The semiconductor device according to claim 11, wherein U in the general formula (10) is a chain alkylene group having 1 to 8 carbon atoms and in which some or all of the hydrogen atoms are substituted with fluorine atoms. . 13. The semiconductor device according to claim 10, wherein V in said general formula (10) is a divalent organic group containing an aromatic group. 14. The semiconductor device according to claim 13, wherein V in the general formula (10) includes at least one structure represented by the following general formulas (6) to (8).

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are hydrogen atoms, monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different.)

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be different or the same.)

(R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different. .) 15. The semiconductor device according to claim 14, wherein V in the general formula (10) includes a structure represented by the following general formula (9).

13. The semiconductor device according to claim 10, wherein V in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms. 17. The semiconductor device according to claim 16, wherein V in said general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms. 4. The semiconductor device according to claim 3, wherein said polymer having a phenolic hydroxyl group contains a novolak type phenolic resin. 4. The semiconductor device according to claim 3, wherein said polymer having a phenolic hydroxyl group includes a phenolic resin having no unsaturated hydrocarbon group and a modified phenolic resin having an unsaturated hydrocarbon group. When the rewiring layer is viewed cross-sectionally, the rewiring layer includes a first interlayer insulating film layer, a second interlayer insulating film layer, and the first interlayer insulating film layer and the second interlayer insulating film layer. 20. The method according to any one of claims 1 to 19, further comprising an intermediate layer provided between the first interlayer insulating film layer and the second interlayer insulating film layer in a layer different from the film layer. 1. The semiconductor device according to claim 1. The first interlayer insulating film layer is in contact with the sealing material, and the etching rate of the first interlayer insulating film layer during oxygen plasma treatment is 0.05 microns/minute or more. 21. The semiconductor device according to claim 20. 22. The semiconductor device according to claim 20, wherein said second interlayer insulating film layer has a composition different from that of said first interlayer insulating film layer. 23. The etching rate of the second interlayer insulating film layer during the oxygen plasma treatment is different from the etching rate of the first interlayer insulating film layer during the oxygen plasma treatment. 1. The semiconductor device according to claim 1. 24. The semiconductor device according to claim 1, wherein said semiconductor device is a fan-out type wafer level chip size package type semiconductor device. 25. The semiconductor device according to claim 1, wherein an etching rate of said interlayer insulating film of said rewiring layer during oxygen plasma treatment is 0.08 μm/min or more. 26. The semiconductor device according to claim 25, wherein an etching rate of said interlayer insulating film of said rewiring layer during oxygen plasma treatment is 0.10 microns/minute or more. 26. The semiconductor device according to claim 25, wherein an etching rate of said interlayer insulating film of said rewiring layer during oxygen plasma treatment is 0.15 microns/minute or more. 26. The semiconductor device according to claim 25, wherein an etching rate of the interlayer insulating film of the rewiring layer during oxygen plasma treatment is 0.20 μm/min or more. 26. The semiconductor device according to claim 25, wherein an etching rate of said interlayer insulating film of said rewiring layer during oxygen plasma treatment is 0.30 microns/minute or more. 27. The semiconductor device according to claim 1, wherein an etching rate of said interlayer insulating film of said rewiring layer during oxygen plasma treatment is 0.15 μm/min or less. forming a sealing material in contact with the semiconductor chip;
forming a rewiring layer having an area larger than that of the semiconductor chip in plan view and including an interlayer insulating film;
A method of manufacturing a semiconductor device, wherein an etching rate of said interlayer insulating film during oxygen plasma treatment is 0.05 microns/minute or more and 0.8 microns/minute or less. 31. The step of forming the interlayer insulating film from a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. A method for manufacturing the semiconductor device according to 1. In the step of forming an interlayer insulating film, the interlayer insulating film is formed of the photosensitive resin composition adjusted with an additive such that the etching rate of the interlayer insulating film during oxygen plasma treatment is 0.05 μm/min or more. 32. The method of manufacturing a semiconductor device according to claim 31, comprising the step of forming a .

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