JP2019029556A - Semiconductor device and method for manufacturing the same - Google Patents

Abstract

To provide a semiconductor device which is superior in adhesion of an interlayer insulation film in a rewiring layer and a sealant, and a method for manufacturing such a semiconductor device.SOLUTION: A semiconductor device (1) according to the present invention comprises: a semiconductor chip (2); a sealant (3) covering the semiconductor chip; and a rewiring layer (4) which is larger, in area, than the semiconductor chip in plane view. The rewiring layer has an interlayer insulation film (6) of which the etching rate during an oxygen plasma process is 0.05 micron meter/min or larger. According to the invention, a semiconductor device superior in adhesion of the interlayer insulation film in the rewiring layer and the sealant, and a method for manufacturing such a semiconductor device can be provided.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

  There are various methods for semiconductor packaging in a semiconductor device. As a semiconductor packaging method, for example, a packaging method in which a semiconductor chip is covered with a sealing material (mold resin) to form an element sealing material, and further, a rewiring layer that is electrically connected to the semiconductor chip is formed. is there. Among the semiconductor packaging methods, in recent years, a semiconductor packaging method called Fan-Out has become mainstream.

  In a fan-out type semiconductor package, a chip sealing body larger than the chip size of the semiconductor chip is formed by covering the semiconductor chip with a sealing material. Further, a rewiring layer extending to the semiconductor chip and the sealing material region is formed. The rewiring layer is formed with a thin film thickness. Further, since the rewiring layer can be formed up to the sealing material region, the number of external connection terminals can be increased.

  For example, the following Patent Document 1 is known as a fan-out type semiconductor device.

JP 2011-129767 A

  A fan-out type semiconductor device is required to have high adhesion between an interlayer insulating film in a rewiring layer and a sealing material. However, the conventional fan-out type semiconductor device does not have sufficient adhesion between the interlayer insulating film in the rewiring layer and the sealing material.

  This invention is made | formed in view of this point, and it aims at providing the semiconductor device excellent in the adhesiveness of the interlayer insulation film in a rewiring layer, and a sealing material, and its manufacturing method.

  A semiconductor device according to the present invention includes a semiconductor chip, a sealing material that covers the semiconductor chip, and a rewiring layer having a larger area than the semiconductor chip in plan view, and oxygen in an interlayer insulating film of the rewiring layer The etching rate during plasma treatment is 0.05 microns / min or more.

  In the present invention, it is preferable that the sealing material is in direct contact with the interlayer insulating film.

  In this invention, it is preferable that the said sealing material contains an epoxy resin.

  In the present invention, the interlayer insulating film preferably contains at least one selected from polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

（一般式（１）中、Ｘ^１は４価の有機基であり、Ｙ^１は２価の有機基であり、ｍは１以上の整数である。） In this invention, it is preferable that the said interlayer insulation film contains the polyimide containing the structure of the following General formula (1).

(In the general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more.)

In the present invention, X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the general formula (1) is a divalent organic containing an aromatic ring. It is preferably a group.

（一般式（４）中、Ｒ₉は酸素原子、硫黄原子、または２価の有機基である。） In the present invention, X ¹ in the general formula (1) preferably includes at least one structure represented by the following general formula (2) to general formula (4).

(In General Formula (4), R ₉ is an oxygen atom, a sulfur atom, or a divalent organic group.)

In the present invention, X ¹ in the general formula (1) preferably includes a structure represented by the following general formula (5).

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１〜５の１価の脂肪族基又は水酸基であり、同一であっても異なっていてもよい。）

（Ｒ_１４〜Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１〜５の１価の有機基又は水酸基であり、互いに異なっていても、同一であってもよい。）

（Ｒ_２２は２価の基であり、Ｒ_２３〜Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１〜５の１価の脂肪族基又は水酸基であり、同一であっても異なっていてもよい。） In the present invention, Y ¹ in the general formula (1) preferably includes at least one structure represented by the following general formula (6) to general formula (8).

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms or a hydroxyl group, and may be the same or different.)

(R _{14 to} R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms or a hydroxyl group, and may be different or the same.)

(R ₂₂ is a divalent group, and R _{23 to} R ₃₀ are a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms or a hydroxyl group, and they may be the same or different. May be good.)

In the present invention, Y ¹ in the general formula (1) preferably includes a structure represented by the following general formula (9).

（一般式（１０）中、ＵとＶは、２価の有機基である。） In this invention, it is preferable that the said polybenzoxazole contains the polybenzoxazole containing the structure of the following General formula (10).

(In general formula (10), U and V are divalent organic groups.)

  In the present invention, U in the general formula (10) is preferably a divalent organic group having 1 to 30 carbon atoms.

  In the present invention, U in the general formula (10) is preferably a chain alkylene group having 1 to 8 carbon atoms and having some or all of the hydrogen atoms substituted with fluorine atoms.

  In the present invention, V in the general formula (10) is preferably a divalent organic group containing an aromatic group.

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１〜５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

（Ｒ_１４〜Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１〜５の１価の有機基であり、互いに異なっていても、同一であってもよい。）

（Ｒ_２２は２価の基であり、Ｒ_２３〜Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１〜５の１価の脂肪族基であり、同一であっても異なっていてもよい。） In the present invention, V in the general formula (10) preferably includes at least one structure represented by the following general formulas (6) to (8).

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different.)

(R _{14 to} R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, which may be different from each other or the same.)

(R ₂₂ is a divalent group, and R _{23 to} R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different. .)

In the present invention, V in the general formula (10) preferably includes a structure represented by the following general formula (9).

  In the present invention, V in the general formula (10) is preferably a divalent organic group having 1 to 40 carbon atoms.

  In the present invention, V in the general formula (10) is preferably a divalent chain aliphatic group having 1 to 20 carbon atoms.

  In the present invention, the polymer having a phenolic hydroxyl group preferably contains a novolac type phenol resin.

  In the present invention, the polymer having a phenolic hydroxyl group preferably includes a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group.

  In the present invention, the redistribution layer includes a first interlayer insulating film layer, a second interlayer insulating film layer, the first interlayer insulating film layer, and the first interlayer insulating film layer when the rewiring layer is viewed in cross section. It is preferable that an intermediate layer provided between the first interlayer insulating film layer and the second interlayer insulating film layer is different from the two interlayer insulating film layers.

  In the present invention, the first interlayer insulating film layer is in contact with the sealing material, and the etching rate during the oxygen plasma treatment of the first interlayer insulating film layer is 0.05 μm / min or more. It is preferable.

  In the present invention, it is preferable that the second interlayer insulating film layer has a composition different from that of the first interlayer insulating film layer.

  In the present invention, it is preferable that an etching rate of the second interlayer insulating film layer during the oxygen plasma processing is different from an etching rate of the first interlayer insulating film layer during the oxygen plasma processing.

  In the present invention, the semiconductor device is preferably a fan-out type wafer level chip size package type semiconductor device.

  In the present invention, it is preferable that the etching rate during oxygen plasma treatment of the interlayer insulating film of the rewiring layer is 0.08 microns / min or more.

  In the present invention, it is preferable that the etching rate during the oxygen plasma treatment of the interlayer insulating film of the rewiring layer is 0.10 microns / min or more.

  In the present invention, it is preferable that an etching rate during oxygen plasma treatment of the interlayer insulating film of the rewiring layer is 0.15 microns / min or more.

  In the present invention, it is preferable that the etching rate during oxygen plasma treatment of the interlayer insulating film of the rewiring layer is 0.20 microns / min or more.

  In the present invention, it is preferable that the etching rate during the oxygen plasma treatment of the interlayer insulating film of the rewiring layer is 0.30 micron / min or more.

  In the present invention, it is preferable that an etching rate during oxygen plasma treatment of the interlayer insulating film of the rewiring layer is 3.0 microns / min or less.

  In the present invention, the etching rate during oxygen plasma treatment of the interlayer insulating film of the rewiring layer is preferably 2.0 microns / min or less.

  In the present invention, the etching rate during oxygen plasma treatment of the interlayer insulating film of the rewiring layer is preferably 1.0 micron / min or less.

  The method for manufacturing a semiconductor device in the present invention includes a step of covering a semiconductor chip with a sealing material, and a step of forming a rewiring layer having an area larger than that of the semiconductor chip in plan view and including an interlayer insulating film, The etching rate during the oxygen plasma treatment of the interlayer insulating film is 0.05 microns / min or more.

  In this invention, it is preferable to include the interlayer insulation film formation process which forms the said interlayer insulation film with the photosensitive resin composition which can form at least 1 compound of the polymer which has a polyimide, polybenzoxazole, and a phenolic hydroxyl group.

  In the present invention, the interlayer insulating film forming step includes the photosensitive resin composition adjusted with an additive such that an etching rate during oxygen plasma treatment of the interlayer insulating film is 0.05 μm / min or more. It is preferable to include a step of forming the interlayer insulating film.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor device excellent in the adhesiveness of the interlayer insulation film in a rewiring layer and a sealing material, and its manufacturing method can be provided.

It is a cross-sectional schematic diagram of the semiconductor device of this embodiment. It is a plane schematic diagram of the semiconductor device of this embodiment. It is an example of the manufacturing process of the semiconductor device of this embodiment. It is a comparison figure of flip chip BGA and fan-out (Fan-Out) type WLCSP.

  Hereinafter, an embodiment of a semiconductor device of the present invention (hereinafter abbreviated as “embodiment”) will be described in detail with reference to the drawings. In addition, this invention is not limited to the following embodiment, It can implement by changing variously within the range of the summary.

(Semiconductor device)
As shown in FIG. 1, a semiconductor device (semiconductor IC) 1 includes a semiconductor chip 2, a sealing material (mold resin) 3 that covers the semiconductor chip 2, and a rewiring layer that is in close contact with the semiconductor chip 2 and the sealing material 3. 4.

  As shown in FIG. 1, the sealing material 3 covers the surface of the semiconductor chip 2 and is formed in an area larger than the area of the semiconductor chip 2 in plan view (A arrow view).

  The rewiring layer 4 includes a plurality of wirings 5 that are electrically connected to a plurality of terminals 2 a provided on the semiconductor chip 2, and an interlayer insulating film 6 that fills the space between the wirings 5. A plurality of terminals 2 a provided on the semiconductor chip 2 and the wiring 5 in the rewiring layer 4 are electrically connected. One end of the wiring 5 is connected to the terminal 2 a and the other end is connected to the external connection terminal 7. The wiring 5 between the terminal 2a and the external connection terminal 7 is covered with an interlayer insulating film 6 over the entire surface.

  As shown in FIG. 1, the rewiring layer 4 is formed larger than the semiconductor chip 2 in plan view (A arrow view). A semiconductor device 1 shown in FIG. 1 is a fan-out type wafer level chip size package (WLCSP) type semiconductor device. In the fan-out type semiconductor device, the interlayer insulating film 6 in the rewiring layer 4 is in close contact with not only the semiconductor chip 2 but also the sealing material 3. The semiconductor chip 2 is made of a semiconductor such as silicon and has a circuit formed therein.

(Rewiring layer)
The rewiring layer 4 is mainly composed of a wiring 5 and an interlayer insulating film 6 covering the periphery of the wiring 5. The interlayer insulating film 6 is preferably a highly insulating member from the viewpoint of preventing unintended conduction with the wiring 5.

  Here, the “rewiring layer 4” in the present embodiment is a thin film layer having the wiring 5 and the interlayer insulating layer 6 as described above, and does not include an interposer or a printed wiring board. Since the semiconductor device (semiconductor IC) 1 uses the rewiring layer 4, as shown in FIG. 4, it is thinner than a semiconductor device using an interposer such as a flip chip BGA.

  In the present embodiment, the film thickness of the rewiring layer 4 can be about 3 to 30 μm. The film thickness of the rewiring layer 4 may be 1 μm or more, 5 μm or more, or 10 μm or more. Further, the film thickness of the rewiring layer 4 may be 40 μm or less, 30 μm or less, or 20 μm or less.

  When the semiconductor device 1 is viewed in plan (A arrow view), it is as shown in FIG. The sealing material 3 is omitted.

  The semiconductor device 1 shown in FIG. 2 is configured such that the area S1 of the redistribution layer 4 is larger than the area S2 of the semiconductor chip 2. The area S1 of the redistribution layer 4 is not particularly limited, but from the viewpoint of increasing the number of external connection terminals, the area S1 of the redistribution layer 4 is 1.05 times or more the area S2 of the semiconductor chip 2. Is preferably 1.1 times or more, more preferably 1.2 times or more, and particularly preferably 1.3 times or more. The upper limit is not particularly limited, but the area S1 of the rewiring layer 4 may be 50 times or less, 25 times or less, or 10 times or less of the area S2 of the semiconductor chip 2. It may be 5 times or less. In FIG. 2, the area of the portion of the rewiring layer 4 covered with the semiconductor chip 2 is also included in the area S1 of the rewiring layer 4.

  Moreover, the external shape of the semiconductor chip 2 and the rewiring layer 4 may be the same or different. In FIG. 2, the external shapes of the semiconductor chip 2 and the redistribution layer 4 are both rectangular similar shapes, but the shapes may be other than rectangular.

  The rewiring layer 4 may be a single layer or a multilayer of two or more layers. The redistribution layer 4 includes a wiring 5 and an interlayer insulating film 6 that fills the space between the wirings 5. The rewiring layer 4 includes a layer that includes only the interlayer insulating film 6 or a layer that includes only the wiring 5. May be included.

  The wiring 5 is not particularly limited as long as it is a highly conductive member, but copper is generally used.

(Encapsulant)
Although there is no limitation in particular in the material of the sealing material 3, an epoxy resin is preferable from a viewpoint of heat resistance and adhesiveness with an interlayer insulation film.

  As shown in FIG. 1, the sealing material 3 is preferably in direct contact with the semiconductor chip 2 and the rewiring layer 4. Thereby, the sealing performance from the surface of the semiconductor chip 2 to the surface of the rewiring layer 4 can be effectively improved.

  The sealing material 3 may be a single layer or may have a configuration in which a plurality of layers are laminated. When the sealing material 3 has a laminated structure, it may be a laminated structure of the same kind of material or a laminated structure of different materials.

(Interlayer insulation film)
The present embodiment is characterized in that the etching rate during the oxygen plasma treatment of the interlayer insulating film 6 is 0.05 microns / min or more. Hereinafter, the etching rate during the oxygen plasma treatment is simply referred to as “etching rate”.

  When the etching rate is 0.05 μm / min or more, the adhesion between the interlayer insulating film 6 and the sealing material 3 during high temperature processing is excellent. Although the reason is not certain, the present inventors presume as follows.

  In the manufacturing process of the fan-out type semiconductor device, a photosensitive resin composition is applied on the chip sealing body composed of the semiconductor chip 2 and the sealing material 3 in order to form the rewiring layer 4. Subsequently, the photosensitive resin composition is exposed to light containing i rays. Thereafter, the photosensitive resin composition is developed and cured to selectively form a portion with and without a cured product of the photosensitive resin composition. The cured product of the photosensitive resin composition becomes the interlayer insulating film 6. Moreover, the wiring 5 is formed in the part without the hardened | cured material of the photosensitive resin composition. Usually, the rewiring layer 4 is often multi-layered. That is, the photosensitive resin composition is further applied, exposed, developed and cured on the interlayer insulating film 6 and the wiring 5.

  By the way, the process of forming the interlayer insulating film 6 and the wiring 5 may include a reflow process depending on the manufacturing method. When heat is applied to the sealing material 3 for a long time, gas is generated from the sealing material 3. there's a possibility that. When the density of the interlayer insulating film 6 is high, that is, when the etching rate of the interlayer insulating film 6 is low, the gas generated from the sealing material 3 is difficult to escape to the outside. That is, the gas generated from the sealing material 3 cannot pass through the insulating film and is difficult to escape. Therefore, gas accumulates at the interface between the sealing material 3 and the interlayer insulating film 6, and the sealing material 3 and the interlayer insulating film 6 are easily peeled off. In particular, an epoxy resin tends to generate gas due to a high-temperature heat history. Therefore, when an epoxy resin is used for the sealing material 3, it is considered that a decrease in adhesion between the interlayer insulating film 6 and the sealing material 3 is promoted.

  The interlayer insulating film 6 of this embodiment has a large etching rate of 0.05 microns / minute or more. For this reason, in this embodiment, even under conditions where gas is easily released from the interlayer insulating film 6 and gas is easily generated from the sealing material 3, there is little peeling between the interlayer insulating film 6 and the sealing material 3. I guess it is high.

  The etching rate of the interlayer insulating film 6 is preferably 0.05 microns / minute or more, and 0.06 microns / minute or more from the viewpoint of adhesion between the interlayer insulating film and the sealing material 3 after the high-temperature treatment. Preferably, it is 0.07 microns / minute or more, preferably 0.08 microns / minute or more, preferably 0.09 microns / minute or more, and 0.10 microns / minute or more. It is preferably 0.15 microns / minute or more, preferably 0.20 microns / minute or more, preferably 0.25 microns / minute or more, and 0.30 microns / minute. It is preferable that it is more than minutes.

  The upper limit of the etching rate of the interlayer insulating film 6 is not particularly limited, but may be 3.0 microns / min or less, 2.0 microns / min or less, or 1.0 microns / min. Min or less, 0.8 micron / min or less, or 0.6 micron / min or less.

  The interlayer insulating film 6 in the rewiring layer 4 may be a multilayer. That is, when the rewiring layer 4 is viewed in cross-section, the rewiring layer 4 includes a first interlayer insulating film layer, a second interlayer insulating film layer, a first interlayer insulating film layer, and the second interlayer insulating layer. An intermediate layer provided between the first interlayer insulating film layer and the second interlayer insulating film layer may be included in a layer different from the insulating film layer. The intermediate layer is, for example, the wiring 5.

  The first interlayer insulating film layer and the second interlayer insulating film layer may have the same composition or different compositions. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same etching rate or different etching rates. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same thickness or different thicknesses. It is preferable that the first interlayer insulating film layer and the second interlayer insulating film layer have different compositions, different etching rates, and different film thicknesses because each interlayer insulating film layer can have different properties.

  When the interlayer insulating film 6 is multi-layered, the etching rate of at least one interlayer insulating film 6 among the plurality of layers may be 0.05 microns / min or more. Since the gap is easily peeled off by the gas, the etching rate of the interlayer insulating film 6 of the interlayer insulating film layer in contact with the sealing material 3 is preferably 0.05 microns / min or more. When the etching rate of the interlayer insulating film 6 of the interlayer insulating film layer in contact with the sealing material 3 is 0.05 μm / min or more, the gas generated in the sealing material 3 can be efficiently removed. The preferable refractive index difference of each interlayer insulating film layer is the same as the preferable etching rate of the interlayer insulating film 6.

(Composition of interlayer insulation film)
The composition of the interlayer insulating film 6 is not particularly limited, but is preferably a film containing at least one compound selected from, for example, polyimide, polybenzoxazole, or a polymer having a phenolic hydroxyl group.

(Resin composition for forming an interlayer insulating film)
The resin composition used for forming the interlayer insulating film 6 is not particularly limited as long as it is a photosensitive resin composition, but is selected from a polyimide precursor, a polybenzoxazole precursor, or a polymer having a phenolic hydroxyl group. A photosensitive resin composition containing at least one compound is preferable. The resin composition used for forming the interlayer insulating film 6 may be liquid or film. The resin composition used for forming the interlayer insulating film 6 may be a negative photosensitive resin composition or a positive photosensitive resin composition.

  In the present embodiment, a pattern after the photosensitive resin composition is exposed and developed is referred to as a relief pattern, and a relief pattern obtained by heating and curing is referred to as a cured relief pattern. This cured relief pattern becomes the interlayer insulating film 6.

<Polyimide precursor composition>
(A) Photosensitive resin Examples of the photosensitive resin used in the polyimide precursor composition include polyamide and polyamic acid ester. For example, as the polyamic acid ester, a polyamic acid ester containing a repeating unit represented by the following general formula (11) can be used.

Ｒ^１及びＲ^２は、それぞれ独立に、水素原子、炭素数１〜３０の飽和脂肪族基、芳香族基、炭素炭素不飽和二重結合を有する一価の有機基、又は、炭素炭素不飽和二重結合を有する一価のイオンである。Ｘ^１は４価の有機基であり、Ｙ^１は２価の有機基であり、ｍは１以上の整数である。ｍは２以上が好ましく、５以上がより好ましい。

R ¹ and R ² are each independently a hydrogen atom, a saturated aliphatic group having 1 to 30 carbon atoms, an aromatic group, a monovalent organic group having a carbon-carbon unsaturated double bond, or carbon-carbon unsaturated. It is a monovalent ion having a double bond. X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more. m is preferably 2 or more, and more preferably 5 or more.

When R ¹ and R ^{2 in the} above general formula (11) are present as monovalent cations, O is negatively charged (present as —O ⁻ ). X ¹ and Y ¹ may contain a hydroxyl group.

R ¹ and R ² in the general formula (11) are more preferably a monovalent organic group represented by the following general formula (12) or a monovalent organic group represented by the following general formula (13). The structure has an ammonium ion at the end of the group.

（一般式（１２）中、Ｒ₃、Ｒ₄及びＲ₅は、それぞれ独立に、水素原子又は炭素数１〜５の有機基であり、そしてｍ₁は、１〜２０の整数である。）

(In the general formula (12), R ₃ , R ₄ and R ₅ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₁ is an integer of 1 to 20).

（一般式（１３）中、Ｒ₆、Ｒ₇及びＲ₈は、それぞれ独立に、水素原子又は炭素数１〜５の有機基であり、そしてｍ₂は、１〜２０の整数である。）

(In General Formula (13), R ₆ , R ₇ and R ₈ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₂ is an integer of 1 to 20).

  A plurality of polyamic acid esters represented by the general formula (11) may be mixed. Moreover, you may use the polyamic acid ester which copolymerized the polyamic acid ester represented by General formula (11).

X ¹ is not particularly limited, but X ¹ is preferably a tetravalent organic group containing an aromatic group from the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3. Specifically, X ¹ is preferably a tetravalent organic group including at least one structure represented by the following general formula (2) to general formula (4).

（一般式（４）中、Ｒ₉は酸素原子、硫黄原子、２価の有機基の何れかである。）

(In general formula (4), R ₉ is any one of an oxygen atom, a sulfur atom, and a divalent organic group.)

R ₉ in the general formula (4) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom. R ₉ may contain a hydroxyl group.

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, X ¹ is particularly preferably a tetravalent organic group including a structure represented by the following general formula (5).

Although Y ¹ is not particularly limited, Y ¹ is preferably a divalent organic group containing an aromatic group from the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3. Specifically, Y ¹ is preferably a divalent organic group including at least one structure represented by the following general formula (6) to general formula (8).

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１〜５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different.)

（Ｒ_１４〜Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１〜５の１価の有機基であり、互いに異なっていても、同一であってもよい。）

(R _{14 to} R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, which may be different from each other or the same.)

（Ｒ_２２は２価の基であり、Ｒ_２３〜Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１〜５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₂₂ is a divalent group, and R _{23 to} R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different. .)

R < ₂₂ > in General formula (8) is a C1-C40 bivalent organic group and a halogen atom, for example.

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, Y ¹ is particularly preferably a divalent organic group including a structure represented by the following general formula (9).

In the polyamic acid ester, X ¹ in the repeating unit is derived from a tetracarboxylic dianhydride used as a raw material, and Y ¹ is derived from a diamine used as a raw material.

  Examples of the tetracarboxylic dianhydride used as a raw material include pyromellitic anhydride, diphenyl ether-3,3 ′, 4,4′-tetracarboxylic dianhydride, benzophenone-3,3 ′, 4,4′- Tetracarboxylic dianhydride, biphenyl-3,3 ′, 4,4′-tetracarboxylic dianhydride, diphenylsulfone-3,3 ′, 4,4′-tetracarboxylic dianhydride, diphenylmethane-3, 3 ', 4,4'-tetracarboxylic dianhydride, 2,2-bis (3,4-phthalic anhydride) propane, 2,2-bis (3,4-phthalic anhydride) -1,1, Examples include 1,3,3,3-hexafluoropropane, but are not limited thereto. These may be used alone or in combination of two or more.

  Examples of the diamine used as the raw material include p-phenylenediamine, m-phenylenediamine, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, and 4,4′-diaminodiphenyl. Sulfide, 3,4′-diaminodiphenylsulfide, 3,3′-diaminodiphenylsulfide, 4,4′-diaminodiphenylsulfone, 3,4′-diaminodiphenylsulfone, 3,3′-diaminodiphenylsulfone, 4,4 '-Diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'- Diaminodiphenylmethane, , 4′-diaminodiphenylmethane, 3,3′-diaminodiphenylmethane, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-amino Phenoxy) benzene, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone, 4,4-bis (4-aminophenoxy) biphenyl, 4,4-bis (3-aminophenoxy) biphenyl, bis [4- (4-aminophenoxy) phenyl] ether, bis [4- (3-aminophenoxy) phenyl] ether, 1,4-bis (4-aminophenyl) benzene, 1 , 3-bis (4-aminophenyl) benzene, 9,10-bis (4-aminophenyl) anthracene, 2,2 Bis (4-aminophenyl) propane, 2,2-bis (4-aminophenyl) hexafluoropropane, 2,2-bis [4- (4-aminophenoxy) phenyl) propane, 2,2-bis [4- (4-aminophenoxy) phenyl) hexafluoropropane, 1,4-bis (3-aminopropyldimethylsilyl) benzene, ortho-tolidine sulfone, 9,9-bis (4-aminophenyl) fluorene and the like. Moreover, a part of hydrogen atoms on these benzene rings may be substituted. These may be used alone or in combination of two or more.

  In the synthesis of the polyamic acid ester (A), a method of subjecting a tetracarboxylic acid diester obtained by carrying out an esterification reaction of a tetracarboxylic dianhydride described later to a condensation reaction with a diamine as it is can be preferably used. .

  The alcohols used in the esterification reaction of the tetracarboxylic dianhydride are alcohols having an olefinic double bond. Specific examples include 2-hydroxyethyl methacrylate, 2-methacryloyloxyethyl alcohol, glycerin diacrylate, and glycerin dimethacrylate, but are not limited thereto. These alcohols can be used alone or in admixture of two or more.

  As a specific method for synthesizing the polyamic acid ester (A) used in the present embodiment, a conventionally known method can be employed. Examples of the synthesis method include the method shown in International Publication No. 00/43439. That is, the tetracarboxylic acid diester is once converted into a tetracarboxylic acid diester diacid chloride, the tetracarboxylic acid diester diacid chloride and diamine are subjected to a condensation reaction in the presence of a basic compound, and the polyamic acid ester (A) The method of manufacturing can be mentioned. Moreover, the method of manufacturing polyamic acid ester (A) by the method of attaching | subjecting a tetracarboxylic-acid diester and diamine to a condensation reaction in presence of an organic dehydrating agent can be mentioned.

  Examples of organic dehydrating agents include dicyclohexylcarbodiimide (DCC), diethylcarbodiimide, diisopropylcarbodiimide, ethylcyclohexylcarbodiimide, diphenylcarbodiimide, 1-ethyl-3- (3-dimethylaminopropyl) carbodiimide, 1-cyclohexyl-3- (3 -Dimethylaminopropyl) carbodiimide hydrochloride and the like.

  The weight average molecular weight of the polyamic acid ester (A) used in the present embodiment is preferably from 6000 to 150,000, more preferably from 7000 to 50000, and even more preferably from 7000 to 20000.

(B1) Photoinitiator When the resin composition used for forming the interlayer insulating film 6 is a negative photosensitive resin, a photoinitiator is added. Examples of the photoinitiator include benzophenone, methyl o-benzoylbenzoate, 4-benzoyl-4′-methyldiphenyl ketone, dibenzyl ketone, benzophenone derivatives such as fluorenone, 2,2′-diethoxyacetophenone, and 2 -Acetophenone derivatives such as hydroxy-2-methylpropiophenone, thioxanthone derivatives such as 1-hydroxycyclohexyl phenyl ketone, thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone and diethylthioxanthone, benzyl, benzyldimethyl ketal and benzyl- benzyl derivatives such as β-methoxyethyl acetal, benzoin derivatives such as benzoin methyl ether, 2,6-di (4′-diazidobenzal) -4-methylcyclohexanone, and , 6′-di (4′-diazidobenzal) cyclohexanone and other azides, 1-phenyl-1,2-butanedione-2- (O-methoxycarbonyl) oxime, 1-phenylpropanedione-2- (O-methoxycarbonyl) ) Oxime, 1-phenylpropanedione-2- (O-ethoxycarbonyl) oxime, 1-phenylpropanedione-2- (O-benzoyl) oxime, 1,3-diphenylpropanetrione-2- (O-ethoxycarbonyl) Oximes, oximes such as 1-phenyl-3-ethoxypropanetrione-2- (O-benzoyl) oxime, N-arylglycines such as N-phenylglycine, peroxides such as benzoyl peroxide, aromatic biphenyls Imidazoles and titanocenes are used. Of these, the above oximes are preferred in terms of photosensitivity.

  1-40 mass parts is preferable with respect to 100 mass parts of polyamic acid ester (A), and, as for the addition amount of these photoinitiators, 2-20 mass parts is more preferable. By adding 1 part by mass or more of the photoinitiator to 100 parts by mass of the polyamic acid ester (A), the photosensitivity is excellent. Moreover, it is excellent in thick film curability by adding 40 mass parts or less.

(B2) Photoacid generator When the resin composition used for forming the interlayer insulating film 6 is a positive photosensitive resin, a photoacid generator is added. By containing a photoacid generator, an acid is generated in the ultraviolet-exposed area, and the solubility of the exposed area in the alkaline aqueous solution is increased. Thereby, it can be used as a positive photosensitive resin composition.

  Examples of the photoacid generator include quinonediazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and iodonium salts. Among these, a quinonediazide compound is preferably used from the viewpoint that an excellent dissolution inhibiting effect is exhibited and a highly sensitive positive photosensitive resin composition can be obtained. Moreover, you may contain 2 or more types of photo-acid generators.

<Etching rate adjustment method>
When the imidization rate increases, the etching rate decreases, and when the imidization rate decreases, the etching rate tends to increase. In order to lower the imidization rate, the amount of the imidization accelerator may be reduced, or the temperature at the time of thermosetting may be lowered.

  In general, an amine compound is preferably used as the imidization accelerator. Examples include primary amines such as aniline, secondary amines such as methylaniline, and tertiary amines such as pyridine. Among them, secondary amines and tertiary amines are preferable from the viewpoint of storage stability of the varnish. Further, among them, heterocyclic amines are preferable, and piperidine, pyrrolidine, purine, pyrimidine, pyridine and derivatives thereof are more preferable.

(D) Solvent It will not be specifically limited if each component is a solvent which can melt | dissolve or disperse | distribute. Examples thereof include N-methyl-2-pyrrolidone, γ-butyrolactone, acetone, methyl ethyl ketone, dimethyl sulfoxide and the like. These solvents can be used in the range of 30 to 1500 parts by mass with respect to 100 parts by mass of (A) photosensitive resin, depending on the coating film thickness and viscosity.

(E) Others The polyimide precursor composition may contain a crosslinking agent. As the cross-linking agent, when the polyimide precursor composition is exposed to light, developed, and then heat-cured, (A) a cross-linking agent that can cross-link the photosensitive resin or that can form a cross-linking network itself is used. be able to. By using a crosslinking agent, the heat resistance and chemical resistance of the cured film (interlayer insulating film) can be further enhanced.

  In addition, it may contain a sensitizer for improving photosensitivity, an adhesion assistant for improving adhesion to the substrate, and the like.

(developing)
After exposing the polyimide precursor composition, unnecessary portions are washed away with a developer. The developer to be used is not particularly limited, but in the case of a polyimide precursor composition which is developed with a solvent, N, N-dimethylformamide, dimethyl sulfoxide, N, N-dimethylacetamide, N-methyl-2 -Good solvents such as pyrrolidone, cyclopentanone, γ-butyrolactone, and acetic esters, mixed solvents of these good solvents with poor solvents such as lower alcohols, water, and aromatic hydrocarbons. After development, rinsing with a poor solvent is performed as necessary.

  In the case of a polyimide precursor composition developed with an alkaline aqueous solution, an aqueous solution of tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, An aqueous solution of a compound exhibiting alkalinity such as dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, and hexamethylenediamine is preferred.

(Thermosetting)
After development, the polyimide precursor is closed by heating to form polyimide. This polyimide becomes a cured relief pattern, that is, the interlayer insulating film 6.

  The heating temperature is not particularly limited, but generally, the lower the heat curing temperature, the smaller the refractive index difference. From the viewpoint of expressing less than 0.0150, which is the refractive index difference of this embodiment, 200 ° C. or lower is preferable, 180 ° C. or lower is preferable, and 160 ° C. or lower is preferable.

<Polyimide>
The structure of the cured relief pattern formed from the polyimide precursor composition is represented by the following general formula (1).

^{X 1, Y} 1, m in the general formula (1) in the general formula (11) as in the ^{X 1, Y} 1, m in, ^{X 1} is a tetravalent organic group, ^{Y 1} is a divalent M is an integer of 1 or more. Preferred X ¹ , Y ¹ and m in the general formula (11) are also preferable in the polyimide of the general formula (1) for the same reason.

  In the case of an alkali-soluble polyimide, the terminal of the polyimide may be a hydroxyl group.

<Polybenzoxazole precursor composition>
(A) Photosensitive resin As the photosensitive resin used in the polybenzoxazole precursor composition, poly (o-hydroxyamide) containing a repeating unit represented by the following general formula (14) can be used.

（一般式（１４）中、ＵとＶは２価の有機基である。）

(In general formula (14), U and V are divalent organic groups.)

  From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, U is preferably a divalent organic group having 1 to 30 carbon atoms, and a chain alkylene group having 1 to 15 carbon atoms (provided that A chain alkylene hydrogen atom may be substituted with a halogen atom), and a chain alkylene group having 1 to 8 carbon atoms and a hydrogen atom substituted with a fluorine atom is particularly preferred.

  Further, from the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, V is preferably a divalent organic group containing an aromatic group, more preferably the following general formula (6) to general formula. A divalent organic group including at least one structure represented by (8) is preferable.

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１〜５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different.)

（Ｒ_１４〜Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１〜５の１価の有機基であり、互いに異なっていても、同一であってもよい。）

(R _{14 to} R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, which may be different from each other or the same.)

（Ｒ_２２は２価の基であり、Ｒ_２３〜Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１〜５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₂₂ is a divalent group, and R _{23 to} R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different. .)

R < ₂₂ > in General formula (8) is a C1-C40 bivalent organic group and a halogen atom, for example.

  From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, V is particularly preferably a divalent organic group including a structure represented by the following general formula (9).

  From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3, V is preferably a divalent organic group having 1 to 40 carbon atoms, more preferably a divalent chain aliphatic group having 1 to 40 carbon atoms. A divalent chain aliphatic group having 1 to 20 carbon atoms is particularly preferable.

  The polybenzoxazole precursor can generally be synthesized from a dicarboxylic acid derivative and a hydroxy group-containing diamine. Specifically, it can be synthesized by converting a dicarboxylic acid derivative into a dihalide derivative and then reacting with a diamine. As the dihalide derivative, a dichloride derivative is preferable.

  The dichloride derivative can be synthesized by reacting a dicarboxylic acid derivative with a halogenating agent. As the halogenating agent, thionyl chloride, phosphoryl chloride, phosphorus oxychloride, phosphorus pentachloride, etc., which are used in the usual acid chlorideation reaction of carboxylic acid can be used.

  As a method of synthesizing the dichloride derivative, it can be synthesized by a method of reacting the dicarboxylic acid derivative and the halogenating agent in a solvent, a method of reacting in an excess halogenating agent, and then distilling off the excess.

  Examples of the dicarboxylic acid used in the dicarboxylic acid derivative include isophthalic acid, terephthalic acid, 2,2-bis (4-carboxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 4,4. '-Dicarboxybiphenyl, 4,4'-dicarboxydiphenyl ether, 4,4'-dicarboxytetraphenylsilane, bis (4-carboxyphenyl) sulfone, 2,2-bis (p-carboxyphenyl) propane, 5- tert-Butylisophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6-naphthalenedicarboxylic acid, malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n -Butylmalonic acid, succinic acid, tetrafluorosuccinic acid, methylsuccinic acid 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, hexafluoroglutaric acid, 2-methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid Acid, 3,3-dimethylglutaric acid, 3-ethyl-3-methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipic acid, octafluoroadipic acid, pimelic acid, 2,2,6,6- Tetramethylpimelic acid, suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid, hexadecafluorosebacic acid, 1,9-nonanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, Hexadecanedioic acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid, Henje Cosandioic acid, docosandioic acid, tricosandioic acid, tetracosandioic acid, pentacosandioic acid, hexacosandioic acid, heptacosandioic acid, octacosandioic acid, nonacosandioic acid, triacontanedioic acid, entriacontanedioic acid, dotriacontane A diacid, diglycolic acid, etc. are mentioned. You may mix and use these.

  Examples of the hydroxyl group-containing diamine include 3,3′-diamino-4,4′-dihydroxybiphenyl, 4,4′-diamino-3,3′-dihydroxybiphenyl, and bis (3-amino-4-hydroxyphenyl). Propane, bis (4-amino-3-hydroxyphenyl) propane, bis (3-amino-4-hydroxyphenyl) sulfone, bis (4-amino-3-hydroxyphenyl) sulfone, 2,2-bis (3-amino) -4-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 2,2-bis (4-amino-3-hydroxyphenyl) -1,1,1,3,3,3 -Hexafluoropropane and the like. You may mix and use these.

(B2) Photoacid generator The photoacid generator has a function of increasing the aqueous alkali solubility of the light irradiation part. Examples of the photoacid generator include diazonaphthoquinone compounds, aryldiazonium salts, diaryliodonium salts, and triarylsulfonium salts. Of these, diazonaphthoquinone compounds are preferred because of their high sensitivity.

<Etching rate adjustment method>
When the cyclization rate of polybenzoxazole increases, the etching rate decreases, and when the cyclization rate decreases, the etching rate tends to increase.

  In order to lower the cyclization rate, the amount of the cyclization accelerator may be reduced or the temperature at the time of thermosetting may be lowered.

  Examples of the cyclization accelerator include sulfonic acid and phosphoric anhydride. Among them, p-toluenesulfonic acid is preferable from the viewpoint of storage stability of the varnish.

(D) Solvent If it is a solvent which can melt | dissolve or disperse | distribute each component, it will not specifically limit.

(E) Others The polybenzoxazole precursor composition can contain a crosslinking agent, a sensitizer, an adhesion aid, a thermal acid generator, and the like.

(developing)
After the polybenzoxazole precursor composition is exposed, unnecessary portions are washed away with a developer. There are no particular restrictions on the developer used, but preferred are aqueous alkali solutions such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, tetramethylammonium hydroxide, and the like. As mentioned.

  In the above description, the positive polybenzoxazole precursor composition has been mainly described. However, a negative polybenzoxazole precursor composition may be used.

(Thermosetting)
After development, the polybenzoxazole precursor is closed by heating to form polybenzoxazole. This polybenzoxazole becomes a cured relief pattern, that is, the interlayer insulating film 6.

  The heating temperature is not particularly limited, but the heating temperature is preferably a low temperature from the viewpoint of influence on other members. 250 degrees or less is preferable, 230 degrees or less is more preferable, 200 degrees or less is more preferable, and 180 degrees or less is particularly preferable.

<Polybenzoxazole>
The structure of the cured relief pattern formed from the polybenzoxazole precursor composition is represented by the following general formula (10).

  U and V in the general formula (10) are the same as U and V in the general formula (14). Preferred U and V in the general formula (14) are also preferable in the polybenzoxazole of the general formula (10) for the same reason.

<Polymer having a phenolic hydroxyl group>
(A) Photosensitive resin A resin having a phenolic hydroxyl group in the molecule and soluble in alkali. Specific examples thereof include a vinyl polymer containing a monomer unit having a phenolic hydroxyl group such as poly (hydroxystyrene), a phenol resin, poly (hydroxyamide), poly (hydroxyphenylene) ether, and polynaphthol.

  Among these, a phenol resin is preferable and a novolac type phenol resin is particularly preferable because of low cost and small volume shrinkage at the time of curing.

  The phenol resin is a polycondensation product of phenol or a derivative thereof and aldehydes. The polycondensation is performed in the presence of a catalyst such as an acid or a base. A phenol resin obtained when an acid catalyst is used is particularly referred to as a novolak type phenol resin.

  Examples of phenol derivatives include phenol, cresol, ethylphenol, propylphenol, butylphenol, amylphenol, benzylphenol, adamantanephenol, benzyloxyphenol, xylenol, catechol, resorcinol, ethylresorcinol, hexylresorcinol, hydroquinone, pyrogallol, phlorog. Lucinol, 1,2,4-trihydroxybenzene, pararozolic acid, biphenol, bisphenol A, bisphenol AF, bisphenol B, bisphenol F, bisphenol S, dihydroxydiphenylmethane, 1,1-bis (4-hydroxyphenyl) cyclohexane, 1, 4-bis (3-hydroxyphenoxybenzene), 2,2-bis (4-hydroxy-3- Tilphenyl) propane, α, α′-bis (4-hydroxyphenyl) -1,4-diisopropylbenzene, 9,9-bis (4-hydroxy-3-methylphenyl) fluorene, 2,2-bis (3-cyclohexyl) -4-hydroxyphenyl) propane, 2,2-bis (2-hydroxy-5-biphenylyl) propane, dihydroxybenzoic acid and the like.

  Examples of aldehyde compounds include formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, pivalaldehyde, butyraldehyde, pentanal, hexanal, trioxane, glyoxal, cyclohexylaldehyde, diphenylacetaldehyde, ethylbutyraldehyde, benzaldehyde, glyoxylic acid, 5-norbornene-2 -Carboxaldehyde, malondialdehyde, succindialdehyde, glutaraldehyde, salicylaldehyde, naphthaldehyde, terephthalaldehyde and the like.

  The component (A) preferably contains (a) a phenol resin not having an unsaturated hydrocarbon group and (b) a modified phenol resin having an unsaturated hydrocarbon group. More preferably, the component (b) is further modified by a reaction between a phenolic hydroxyl group and a polybasic acid anhydride.

  Further, as the component (b), a phenol resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms is used from the viewpoint of further improving mechanical properties (elongation at break, elastic modulus and residual stress). It is preferable.

  (B) A modified phenolic resin having an unsaturated hydrocarbon group is generally a compound having phenol or a derivative thereof and an unsaturated hydrocarbon group (preferably having 4 to 100 carbon atoms) (hereinafter sometimes simply referred to as “unsaturated”). A reaction product with a saturated hydrocarbon group-containing compound ”(hereinafter referred to as“ unsaturated hydrocarbon group-modified phenol derivative ”) and a polycondensation product of aldehydes, or a phenol resin and an unsaturated hydrocarbon. It is a reaction product with a group-containing compound.

  The phenol derivative here can be the same as the phenol derivative described above as a raw material of the phenol resin as the component (A).

  The unsaturated hydrocarbon group of the unsaturated hydrocarbon group-containing compound preferably contains two or more unsaturated groups from the viewpoints of adhesion of the resist pattern and thermal shock resistance. In addition, from the viewpoint of compatibility with the resin composition and the flexibility of the cured film, the unsaturated hydrocarbon group-containing compound preferably has 8 to 80 carbon atoms, more preferably 10 to 60 carbon atoms. preferable.

  Examples of the unsaturated hydrocarbon group-containing compound include unsaturated hydrocarbons having 4 to 100 carbon atoms, polybutadiene having a carboxyl group, epoxidized polybutadiene, linoleyl alcohol, oleyl alcohol, unsaturated fatty acid, and unsaturated fatty acid ester. . Suitable unsaturated fatty acids include crotonic acid, myristoleic acid, palmitoleic acid, oleic acid, elaidic acid, vaccenic acid, gadoleic acid, erucic acid, nervonic acid, linoleic acid, α-linolenic acid, eleostearic acid, stearidone Examples include acids, arachidonic acid, eicosapentaenoic acid, sardine acid and docosahexaenoic acid. Among these, an ester of an unsaturated fatty acid having 8 to 30 carbon atoms and a monovalent to trivalent alcohol having 1 to 10 carbon atoms is more preferable, and an unsaturated fatty acid having 8 to 30 carbon atoms and a trivalent alcohol are preferable. Especially preferred are esters with glycerin.

  Esters of unsaturated fatty acids having 8 to 30 carbon atoms and glycerin are commercially available as vegetable oils. Vegetable oils include non-drying oils with an iodine value of 100 or less, semi-drying oils with more than 100 and less than 130, or 130 or more drying oils. Non-drying oils include, for example, olive oil, Asa seed oil, cashew oil, potato oil, camellia oil, castor oil, and peanut oil. Examples of semi-drying oils include corn oil, cottonseed oil, and sesame oil. Examples of the drying oil include paulownia oil, linseed oil, soybean oil, walnut oil, safflower oil, sunflower oil, camellia oil and coconut oil. Moreover, you may use the processed vegetable oil obtained by processing these vegetable oils.

  Among the above vegetable oils, it is preferable to use a non-drying oil from the viewpoint of preventing gelation accompanying the progress of excessive reaction and improving the yield in the reaction of phenol or a derivative thereof or a phenol resin with a vegetable oil. On the other hand, it is preferable to use a drying oil from the viewpoint of improving the adhesion, mechanical properties and thermal shock resistance of the resist pattern. Among the drying oils, tung oil, linseed oil, soybean oil, walnut oil and safflower oil are preferable, and tung oil and linseed oil are more preferable because the effects of the present invention can be more effectively and reliably exhibited.

  These unsaturated hydrocarbon group-containing compounds are used singly or in combination of two or more.

  In preparing the component (b), first, the phenol derivative and the unsaturated hydrocarbon group-containing compound are reacted to produce an unsaturated hydrocarbon group-modified phenol derivative. The reaction is preferably performed at 50 to 130 ° C. From the viewpoint of improving the flexibility of the cured film (resist pattern), the reaction ratio between the phenol derivative and the unsaturated hydrocarbon group-containing compound is 1 to 100 unsaturated hydrocarbon group-containing compounds with respect to 100 parts by mass of the phenol derivative. It is preferable that it is a mass part, and it is more preferable that it is 5-50 mass parts. If the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the heat resistance of the cured film tends to decrease. In the above reaction, if necessary, p-toluenesulfonic acid, trifluoromethanesulfonic acid, or the like may be used as a catalyst.

  A phenol resin modified with an unsaturated hydrocarbon group-containing compound is produced by polycondensation of an unsaturated hydrocarbon group-modified phenol derivative produced by the above reaction with an aldehyde. As the aldehydes, those described above as the aldehydes used for obtaining the phenol resin can be used.

  The reaction of the aldehydes with the unsaturated hydrocarbon group-modified phenol derivative is a polycondensation reaction, and conventionally known synthesis conditions for phenol resins can be used. The reaction is preferably performed in the presence of a catalyst such as an acid or a base, and more preferably an acid catalyst is used. Examples of the acid catalyst include hydrochloric acid, sulfuric acid, formic acid, acetic acid, p-toluenesulfonic acid, and oxalic acid. These acid catalysts can be used alone or in combination of two or more.

  The above reaction is preferably carried out usually at a reaction temperature of 100 to 120 ° C. Moreover, although reaction time changes with kinds and quantity of a catalyst to be used, it is 1 to 50 hours normally. After completion of the reaction, the reaction product is dehydrated under reduced pressure at a temperature of 200 ° C. or lower to obtain a phenol resin modified with the unsaturated hydrocarbon group-containing compound. In the reaction, a solvent such as toluene, xylene, or methanol can be used.

  A phenol resin modified with an unsaturated hydrocarbon group-containing compound can also be obtained by polycondensing the unsaturated hydrocarbon group-modified phenol derivative with an aldehyde together with a compound other than phenol such as m-xylene. . In this case, the molar ratio of the compound other than phenol to the compound obtained by reacting the phenol derivative with the unsaturated hydrocarbon group-containing compound is preferably less than 0.5.

  The component (b) can also be obtained by reacting the phenol resin of the component (a) with an unsaturated hydrocarbon group-containing compound.

  The unsaturated hydrocarbon group-containing compound to be reacted with the phenol resin can be the same as the unsaturated hydrocarbon group-containing compound described above.

  The reaction between the phenol resin and the unsaturated hydrocarbon group-containing compound is usually preferably performed at 50 to 130 ° C. Moreover, the reaction rate of a phenol resin and an unsaturated hydrocarbon group containing compound is an unsaturated hydrocarbon group containing compound 1 with respect to 100 mass parts of phenol resins from a viewpoint of improving the flexibility of a cured film (resist pattern). It is preferably ˜100 parts by mass, more preferably 2 to 70 parts by mass, and even more preferably 5 to 50 parts by mass. If the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the possibility of gelation during the reaction tends to increase, and curing The heat resistance of the film tends to decrease. At this time, if necessary, p-toluenesulfonic acid, trifluoromethanesulfonic acid or the like may be used as a catalyst. In addition, solvents, such as toluene, xylene, methanol, tetrahydrofuran, can be used for reaction.

  A polybasic acid anhydride is further reacted with the phenolic hydroxyl group remaining in the phenol resin modified with the unsaturated hydrocarbon group-containing compound produced by the above method. Thereby, the acid-modified phenol resin can also be used as the component (b). By acid-modifying with a polybasic acid anhydride, a carboxy group is introduced, and the solubility of the component (b) in an alkaline aqueous solution (developer) is further improved.

  The polybasic acid anhydride is not particularly limited as long as it has an acid anhydride group formed by dehydration condensation of a carboxy group of a polybasic acid having a plurality of carboxy groups. Examples of the polybasic acid anhydride include phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride Dibasic acid anhydrides such as acid, methylhexahydrophthalic anhydride, nadic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride and trimellitic anhydride, biphenyl Tetracarboxylic dianhydride, naphthalene tetracarboxylic dianhydride, diphenyl ether tetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic anhydride and benzophenone teto Aromatic tetrabasic acid dianhydride, such as a carboxylic acid dianhydride. You may use these individually by 1 type or in combination of 2 or more types. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably at least one selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride. . In this case, there is an advantage that a resist pattern having a better shape can be formed.

  In addition, (A) the alkali-soluble resin having a phenolic hydroxyl group can further contain a phenol resin that has been acid-modified by reacting with a polybasic acid anhydride. By containing the phenol resin in which the component (A) is acid-modified with a polybasic acid anhydride, the solubility of the component (A) in the alkaline aqueous solution (developer) is further improved.

  Examples of the polybasic acid anhydride include phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methyltetrahydroanhydride. Dibasic acid anhydrides such as phthalic acid, methylhexahydrophthalic anhydride, nadic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride, trimellitic anhydride, Biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenyl ether tetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic anhydride, benzophenone teto Aliphatic, such as dianhydrides, aromatic tetracarboxylic acid dianhydride and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, for example, at least one selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride. More preferred.

(B2) Photoacid generator Examples of the photoacid generator include diazonaphthoquinone compounds, aryldiazonium salts, diaryliodonium salts, and triarylsulfonium salts. Of these, diazonaphthoquinone compounds are preferred because of their high sensitivity.

<Etching rate adjustment method>
As the thermal crosslinking rate of phenol increases, the etching rate decreases, and as the thermal crosslinking rate decreases, the etching rate increases.

  In order to reduce the thermal crosslinking rate, the amount of the thermal crosslinking accelerator may be reduced, or the temperature at the time of thermosetting may be lowered.

  Examples of thermal crosslinking accelerators include epoxy compounds, oxetane compounds, oxazoline compounds, aldehydes, aldehyde-modified products, isocyanate compounds, unsaturated bond-containing compounds, polyhydric alcohol compounds, polyvalent amine compounds, melamine compounds, metal chelating agents, C-methylol compounds, N-methylol compounds and the like are preferably used.

(D) Solvent If it is a solvent which can melt | dissolve or disperse | distribute each component, it will not specifically limit.

(E) Others Thermal crosslinking agents, sensitizers, adhesion assistants, dyes, surfactants, dissolution accelerators, crosslinking accelerators, and the like can be included. Among these, by containing the thermal crosslinking agent, when the photosensitive resin film after pattern formation is heated and cured, the thermal crosslinking agent component reacts with the component (A) to form a bridge structure. As a result, curing at a low temperature is possible, and brittleness of the film and melting of the film can be prevented. As the thermal crosslinking agent component, specifically, a compound having a phenolic hydroxyl group, a compound having a hydroxymethylamino group, or a compound having an epoxy group can be preferably used.

(developing)
After exposing the polymer having a phenolic hydroxyl group, unnecessary portions are washed away with a developer. There are no particular restrictions on the developer used, but examples include alkaline aqueous solutions such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide (TMAH). Are preferably used.

(Thermosetting)
After development, the polymers having phenolic hydroxyl groups are thermally crosslinked by heating. The crosslinked polymer becomes a cured relief pattern, that is, an interlayer insulating film 6.

  The heating temperature is not particularly limited, but the heating temperature is preferably a low temperature from the viewpoint of influence on other members. 250 degrees or less is preferable, 230 degrees or less is more preferable, 200 degrees or less is more preferable, and 180 degrees or less is particularly preferable.

(Method for manufacturing semiconductor device)
A method for manufacturing a semiconductor device according to this embodiment will be described with reference to FIGS. In FIG. 3A, a preprocessed wafer 10 is prepared. In FIG. 3B, the preprocessed wafer 10 is diced to form a plurality of semiconductor chips 2. The semiconductor chip 2 may be a purchased product. The semiconductor chip 2 thus prepared is affixed on the support 11 at a predetermined interval as shown in FIG. 3C.

  Subsequently, a mold resin 12 is applied over the semiconductor chip 2 to the support 11, and the mold is sealed as shown in FIG. 3D. Subsequently, the support 11 is peeled off, and the mold resin 12 is inverted (see FIG. 3E). As shown in FIG. 3E, the semiconductor chip 2 and the mold resin 12 appear on substantially the same plane. Subsequently, in the process illustrated in FIG. 3F, the photosensitive resin composition 13 is applied onto the semiconductor chip 2 and the mold resin 12. Then, the applied photosensitive resin composition 13 is exposed and developed to form a relief pattern (relief pattern forming step). The photosensitive resin composition 13 may be either a positive type or a negative type. Further, the relief pattern is heated to form a cured relief pattern (interlayer insulating film forming step). Furthermore, a wiring is formed in a place where a cured relief pattern is not formed (wiring forming step).

  In the present embodiment, the relief pattern forming process, the interlayer insulating film forming process, and the wiring forming process are combined to form a rewiring layer forming process for forming a rewiring layer connected to the semiconductor chip 2.

  The interlayer insulating film in the rewiring layer may be a multilayer. Therefore, the rewiring layer forming process may include a plurality of relief pattern forming processes, a plurality of interlayer insulating film forming processes, and a plurality of wiring forming processes.

  In FIG. 3G, a plurality of external connection terminals 7 corresponding to each semiconductor chip 2 are formed (bump formation), and each semiconductor chip 2 is diced. Thereby, as shown to FIG. 3H, the semiconductor device (semiconductor IC) 1 can be obtained. In the present embodiment, a plurality of fan-out type semiconductor devices 1 can be obtained by the manufacturing method shown in FIG.

  In the present embodiment, the etching rate of the cured relief pattern (interlayer insulating film) formed through the above steps can be 0.05 microns / min or more.

  In the present embodiment, in the interlayer insulating film forming step described above, the interlayer insulating film may be formed of a photosensitive resin composition capable of forming at least one compound of a polymer having polyimide, polybenzoxazole, and phenolic hydroxyl group. preferable.

  Examples carried out to clarify the effects of the present invention will be described below. In the examples, the following materials and measuring methods were used.

  Examples carried out to clarify the effects of the present invention will be described below.

(Polymer A-1: Synthesis of polyimide precursor)
4,4′-Oxydiphthalic dianhydride (ODPA) as tetracarboxylic dianhydride was placed in a 2 liter separable flask. Furthermore, 2-hydroxyethyl methacrylate (HEMA) and γ-butyrolactone were added and stirred at room temperature, and pyridine was added while stirring to obtain a reaction mixture. After completion of the exothermic reaction, the mixture was allowed to cool to room temperature and left for 16 hours.

  Next, under ice-cooling, a solution of dicyclohexylcarbodiimide (DCC) dissolved in γ-butyrolactone was added to the reaction mixture over 40 minutes with stirring. Subsequently, a suspension of 4,4′-diaminodiphenyl ether (DADPE) as diamine in γ-butyrolactone was added over 60 minutes with stirring. Furthermore, after stirring at room temperature for 2 hours, ethyl alcohol was added and stirred for 1 hour, and then γ-butyrolactone was added. The precipitate generated in the reaction mixture was removed by filtration to obtain a reaction solution.

  The obtained reaction solution was added to ethyl alcohol to produce a precipitate consisting of a crude polymer. The produced crude polymer was separated by filtration and dissolved in tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was dropped into water to precipitate a polymer, and the obtained precipitate was filtered off and then dried under vacuum to obtain a powdered polymer (polyimide precursor (polymer A-1)). . About the mass of the compound used by component A-1, it is as Table 1 shown below.

(Synthesis of polymers A-2 to A-3)
Except for changing the tetracarboxylic dianhydride and diamine as shown in Table 1 below, the reaction is carried out in the same manner as the method described in Polymer A-1, and polyimide precursors (Polymers A-2 to A-4) Got.

(Polymer B-1: Synthesis of polybenzoxazole precursor)
In a 0.5 liter flask equipped with a stirrer and a thermometer, 15.48 g of 4,4′-diphenyl ether dicarboxylic acid and N-methylpyrrolidone were charged as a dicarboxylic acid. After the flask was cooled to 5 ° C., thionyl chloride was added dropwise and reacted for 30 minutes to obtain a dicarboxylic acid chloride solution. Next, N-methylpyrrolidone was charged into a 0.5 liter flask equipped with a stirrer and a thermometer. Bis (3-amino-4-hydroxyphenyl) hexafluoropropane (18.30 g) and m-aminophenol (2.18 g) were dissolved under stirring as bisaminophenol, and pyridine was added thereto. Then, while maintaining the temperature at 0 to 5 ° C., the dicarboxylic acid chloride solution was dropped in 30 minutes, and then the stirring was continued for 30 minutes. The solution was poured into 3 liters of water, and the precipitate was collected, washed three times with pure water, and then dried under reduced pressure to obtain a polymer (polybenzoxazole precursor (polymer B-1)). The mass of the compound used in Polymer B-1 is as shown in Table 1 below.

(Synthesis of polymer B-2)
A polybenzoxazole precursor (Polymer B-2) is obtained by reacting in the same manner as described in Polymer B-1, except that dicarboxylic acid and bisaminophenol are changed as shown in Table 1 below. It was.

(Polymer C-1: Synthesis of phenol resin)
A phenol resin containing 85 g of the C1 resin shown below and 15 g of the C2 resin shown below was prepared as the polymer C-1.
C1: Cresol novolak resin (cresol / formaldehyde novolak resin, m-cresol / p-cresol (molar ratio) = 60/40, polystyrene-equivalent weight average molecular weight = 12,000, manufactured by Asahi Organic Materials Co., Ltd., trade name “EP4020G” )

C2: C2 was synthesized as follows.
<C2: Synthesis of a phenol resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms>
100 parts by weight of phenol, 43 parts by weight of linseed oil and 0.1 parts by weight of trifluoromethanesulfonic acid were mixed and stirred at 120 ° C. for 2 hours to obtain a vegetable oil-modified phenol derivative (a). Next, 130 g of the vegetable oil-modified phenol derivative (a), 16.3 g of paraformaldehyde and 1.0 g of oxalic acid were mixed and stirred at 90 ° C. for 3 hours. Subsequently, after heating up to 120 degreeC and stirring under reduced pressure for 3 hours, 29 g of succinic anhydride and 0.3 g of triethylamine were added to the reaction liquid, and it stirred at 100 degreeC under atmospheric pressure for 1 hour. The reaction liquid was cooled to room temperature, and a phenol resin (hereinafter referred to as “C2 resin”) modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms as a reaction product was obtained (acid value 120 mgKOH). / G).

(Synthesis of polymer C-2)
The following C1 resin 100g was prepared as polymer C-2.

[Examples 1-7, Comparative Examples 1-2]
It mix | blended as shown in Table 2 shown below, and obtained the solution of the photosensitive resin composition. In addition, the unit of Table 2 is a mass part.

  Each photosensitive resin composition of Examples 1-7 and Comparative Examples 1-2 was produced with the compounding amounts shown in Table 3 and Table 4 using the compounds shown in Table 2.

  The prepared photosensitive resin composition was subjected to (1) an etching rate measurement test during oxygen plasma treatment, (2) a reflow resistance test of the sealing material, and (3) an adhesion test with the sealing material. The results of each test are shown in Table 3 below.

(1) Etching rate measurement test during oxygen plasma processing A fan-out type wafer level chip size package type semiconductor device was manufactured using the photosensitive resin compositions prepared in Examples and Comparative Examples. An interlayer insulating film having a thickness of 10 μm was taken out as cleanly as possible from the manufactured semiconductor device. The extracted interlayer insulating film was treated for 3 minutes under conditions of 133 W and 50 Pa using an EXAM apparatus manufactured by Shinko Electric Co., Ltd., and the etching rate during the oxygen plasma treatment was measured by measuring the film thickness before and after the treatment. .

(2) Reflow resistance test of sealing material R4000 series manufactured by Nagase Chemtex Co., Ltd. was prepared as an epoxy-based sealing material. Next, the sealing material was spin-coated on an aluminum-sputtered silicone wafer so as to have a thickness of about 150 microns, and was thermally cured at 130 ° C. to cure the epoxy-based sealing material. The photosensitive resin compositions prepared in Examples and Comparative Examples were applied on the epoxy cured film so that the final film thickness was 10 microns. The coated photosensitive resin compositions were exposed to the exposure conditions of Examples 1 to 3, Comparative Example 1 of 200 mJ / cm ² , Examples 4 and 5 and Comparative Example 2 of 500 mJ / cm ² , and then exposed to 150 m. A first cured film having a thickness of 10 microns was produced by thermosetting at 4 ° C. for 4 hours.

  The photosensitive resin composition used in the formation of the first-layer cured film is applied on the first-layer cured film, and the entire surface is exposed under the same conditions as those for forming the first-layer cured film, and then thermally cured. A second cured film having a thickness of 10 microns was prepared.

  The test piece after the second cured film was formed was subjected to simulated solder reflow conditions using a mesh belt type continuous firing furnace (manufactured by Koyo Thermo Systems Co., Ltd., model name 6841-20AMC-36) under a nitrogen atmosphere and a peak temperature. Heated to 260 ° C. The simulated reflow conditions are based on the solder reflow conditions described in 7.6 of IPC / JEDEC J-STD-020A, which is the standard of the US semiconductor industry association for semiconductor device evaluation methods, and the melting point of the solder. Assuming a high temperature of 220 ° C., normalization was performed.

  After cutting the cross section of the cured film after the treatment under the simulated reflow conditions with an FIB apparatus (JIB-4000, manufactured by JEOL Ltd.), the degree of deterioration was evaluated by checking the presence or absence of voids in the epoxy part. . The case where no void was seen was marked with ○, and the case where even one void was seen was marked with ×.

(3) Adhesion test with sealing material Pins were placed on the cured photosensitive resin film of the sample prepared in the test of (2), and the adhesion was measured using a take-up tester (Quad Group, Sebastian type 5). A test was conducted.
Evaluation: Adhesive strength of 70 MPa or more.
50 MPa or more and less than -70 MPa ... adhesion force
30 MPa or more and less than −50 MPa, adhesion force Δ
Less than 30 MPa ...

  Using the photosensitive resin composition described in Examples 1 to 7, a fan-out type wafer level chip size package type semiconductor device including an epoxy resin in a mold resin was manufactured and operated without problems.

  The present invention is preferably applied to a semiconductor device having a semiconductor chip and a redistribution layer connected to the semiconductor chip, in particular, a fan-out type wafer level chip size package type semiconductor device.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Semiconductor chip 3 Sealing material 4 Redistribution layer 5 Wiring 6 Interlayer insulation film 7 External connection terminal 10 Wafer 11 Support body 12 Mold resin 13 Photosensitive resin composition

Claims (36)

A semiconductor chip;
A sealing material covering the semiconductor chip;
A redistribution layer having a larger area than the semiconductor chip in plan view,
The semiconductor device according to claim 1, wherein an etching rate of the interlayer insulating film of the rewiring layer during oxygen plasma treatment is 0.05 microns / min or more.   The semiconductor device according to claim 1, wherein the sealing material is in direct contact with the interlayer insulating film.   The semiconductor device according to claim 1, wherein the sealing material includes an epoxy resin.   4. The semiconductor device according to claim 1, wherein the interlayer insulating film includes at least one selected from polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. The semiconductor device according to claim 4, wherein the interlayer insulating film includes polyimide including a structure of the following general formula (1).

(In the general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more.) X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring,
The semiconductor device according to claim 5, wherein Y ¹ in the general formula (1) is a divalent organic group including an aromatic ring. The semiconductor according to claim 5 or 6, wherein X ¹ in the general formula (1) includes at least one structure represented by the following general formula (2) to general formula (4). apparatus.

(In General Formula (4), R ₉ is an oxygen atom, a sulfur atom, or a divalent organic group.) 8. The semiconductor device according to claim 7, wherein X ¹ in the general formula (1) includes a structure represented by the following general formula (5).

The Y ¹ in the general formula (1) includes at least one structure represented by the following general formula (6) to general formula (8). The semiconductor device described.

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms or a hydroxyl group, and may be the same or different.)

(R _{14 to} R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms or a hydroxyl group, and may be different or the same.)

(R ₂₂ is a divalent group, and R _{23 to} R ₃₀ are a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms or a hydroxyl group, and they may be the same or different. May be good.) The semiconductor device according to claim 9, wherein Y ¹ in the general formula (1) includes a structure represented by the following general formula (9).

The semiconductor device according to claim 4, wherein the polybenzoxazole includes polybenzoxazole including a structure of the following general formula (10).

(In general formula (10), U and V are divalent organic groups.)   12. The semiconductor device according to claim 11, wherein U in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms.   13. The semiconductor device according to claim 12, wherein U in the general formula (10) is a chain alkylene group having 1 to 8 carbon atoms in which part or all of the hydrogen atoms are substituted with fluorine atoms. .   14. The semiconductor device according to claim 11, wherein V in the general formula (10) is a divalent organic group including an aromatic group. 15. The semiconductor device according to claim 14, wherein V in the general formula (10) includes at least one structure represented by the following general formula (6) to general formula (8).

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different.)

(R _{14 to} R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, which may be different from each other or the same.)

(R ₂₂ is a divalent group, and R _{23 to} R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different. .) 16. The semiconductor device according to claim 15, wherein V in the general formula (10) includes a structure represented by the following general formula (9).

  14. The semiconductor device according to claim 11, wherein V in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms.   18. The semiconductor device according to claim 17, wherein V in the general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms.   The semiconductor device according to claim 4, wherein the polymer having a phenolic hydroxyl group contains a novolac type phenol resin.   The semiconductor device according to claim 4, wherein the polymer having a phenolic hydroxyl group includes a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group.   The rewiring layer has a first interlayer insulating film layer, a second interlayer insulating film layer, the first interlayer insulating film layer, and the second interlayer insulating film when the rewiring layer is viewed in cross section. 21. The method according to claim 1, further comprising: an intermediate layer provided between the first interlayer insulating film layer and the second interlayer insulating film layer, which is a layer different from the film layer. A semiconductor device according to claim 1.   The first interlayer insulating film layer is in contact with the sealing material, and an etching rate during oxygen plasma treatment of the first interlayer insulating film layer is 0.05 microns / min or more. The semiconductor device according to claim 21.   23. The semiconductor device according to claim 21, wherein the second interlayer insulating film layer has a composition different from that of the first interlayer insulating film layer.   24. The etching rate of the second interlayer insulating film layer during oxygen plasma processing is different from the etching rate of the first interlayer insulating film layer during oxygen plasma processing. A semiconductor device according to claim 1.   25. The semiconductor device according to claim 1, wherein the semiconductor device is a fan-out type wafer level chip size package type semiconductor device.   26. The semiconductor device according to claim 1, wherein an etching rate at the time of oxygen plasma treatment of the interlayer insulating film of the rewiring layer is 0.08 microns / min or more.   27. The semiconductor device according to claim 26, wherein an etching rate during oxygen plasma treatment of the interlayer insulating film of the rewiring layer is 0.10 microns / min or more.   27. The semiconductor device according to claim 26, wherein an etching rate during oxygen plasma treatment of the interlayer insulating film of the rewiring layer is 0.15 microns / min or more.   27. The semiconductor device according to claim 26, wherein an etching rate during oxygen plasma treatment of the interlayer insulating film of the redistribution layer is 0.20 microns / min or more.   27. The semiconductor device according to claim 26, wherein an etching rate during oxygen plasma treatment of the interlayer insulating film of the redistribution layer is 0.30 microns / min or more.   31. The semiconductor device according to claim 1, wherein an etching rate at the time of oxygen plasma treatment of the interlayer insulating film of the rewiring layer is 3.0 microns / min or less.   32. The semiconductor device according to claim 31, wherein an etching rate during oxygen plasma treatment of the interlayer insulating film of the redistribution layer is 2.0 microns / min or less.   32. The semiconductor device according to claim 31, wherein an etching rate during oxygen plasma treatment of the interlayer insulating film of the redistribution layer is 1.0 micron / min or less. Covering the semiconductor chip with a sealing material;
Including a step of forming a rewiring layer having an area larger than that of the semiconductor chip in plan view and including an interlayer insulating film;
A method of manufacturing a semiconductor device, wherein an etching rate during oxygen plasma treatment of the interlayer insulating film is 0.05 microns / min or more.   35. A step of forming an interlayer insulating film comprising forming a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. The manufacturing method of the semiconductor device as described in any one of Claims 1-3. In the interlayer insulating film forming step, the interlayer insulating film is made of the photosensitive resin composition adjusted with an additive so that an etching rate of the interlayer insulating film during oxygen plasma treatment is 0.05 μm / min or more. 36. The method of manufacturing a semiconductor device according to claim 35, further comprising the step of forming

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