JP7395654B2 - Semiconductor device, manufacturing method thereof, and interlayer insulating film - Google Patents

Description

The present invention relates to a semiconductor device and a method for manufacturing the same.

There are various methods for semiconductor packaging in semiconductor devices. An example of a semiconductor packaging method is to cover a semiconductor chip with an encapsulating material (molding resin) to form an element encapsulating material, and then to form a rewiring layer that electrically connects to the semiconductor chip. be. Among semiconductor packaging methods, a semiconductor packaging method called "Fan-Out" has become mainstream in recent years.

In a fan-out type semiconductor package, a semiconductor chip is covered with a sealing material to form a chip sealing body larger than the chip size of the semiconductor chip. Furthermore, a rewiring layer is formed that extends to the area of the semiconductor chip and the sealing material. The rewiring layer is formed with a thin film thickness. Further, since the rewiring layer can be formed up to the region of the sealing material, the number of external connection terminals can be increased.

For example, the following Patent Document 1 is known as a fan-out type semiconductor device.

Japanese Patent Application Publication No. 2011-129767

A fan-out type semiconductor device requires high adhesion between an interlayer insulating film in a rewiring layer and a sealing material. However, in the conventional fan-out type semiconductor device, the adhesion between the interlayer insulating film in the rewiring layer and the sealing material was not sufficient.

The present invention has been made in view of this point, and an object of the present invention is to provide a semiconductor device that has excellent adhesion between an interlayer insulating film in a rewiring layer and a sealing material, and a method for manufacturing the same.

The semiconductor device of the present invention includes a semiconductor chip, a sealing material in contact with the semiconductor chip, and a rewiring layer having a larger area than the semiconductor chip in plan view, and the sealing material is arranged in the rewiring layer. the sealing material includes a hardened epoxy resin;
The i-line transmittance of the interlayer insulating film of the rewiring layer is 80% or less when converted to a thickness of 10 μm.
.

The interlayer insulating film of the present invention provides a semiconductor device including a semiconductor chip, a sealing material in contact with the semiconductor chip, and a rewiring layer having a larger area than the semiconductor chip in plan view, in which the rewiring layer is formed. The present invention is an interlayer insulating film for use in, is in direct contact with the sealing material containing a cured epoxy resin , and has an i-line transmittance of 80% or less when converted to a thickness of 10 μm.

In the present invention, it is preferable that the interlayer insulating film contains at least one selected from polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

（一般式（１）中、Ｘ^１は４価の有機基であり、Ｙ^１は２価の有機基であり、ｍは１以上の整数である。） In the present invention, it is preferable that the interlayer insulating film contains polyimide having a structure represented by the following general formula (1).

(In general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more.)

In the present invention, X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the general formula (1) is a divalent organic group containing an aromatic ring. It is preferable that it is a group.

（一般式（４）中、Ｒ₉は酸素原子、硫黄原子、または２価の有機基である。） In the present invention, X ¹ in the general formula (1) preferably includes at least one structure represented by the following general formulas (2) to (4).

(In general formula (4), R ₉ is an oxygen atom, a sulfur atom, or a divalent organic group.)

In the present invention, X ¹ in the general formula (1) preferably includes a structure represented by the following general formula (5).

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１～５の１価の脂肪族基又は水酸基であり、同一であっても異なっていてもよい。）

（Ｒ_１４～Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１～５の１価の有機基又は水酸基であり、互いに異なっていても、同一であってもよい。）

（Ｒ_２２は２価の有機基であり、Ｒ_２３～Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１～５の１価の脂肪族基又は水酸基であり、同一であっても異なっていてもよい。） In the present invention, Y ¹ in the general formula (1) preferably includes at least one structure represented by the following general formulas (6) to (8).

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different.)

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be different or the same.)

(R ₂₂ is a divalent organic group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different. )

In the present invention, Y ¹ in the general formula (1) preferably includes a structure represented by the following general formula (9).

In the present invention, it is preferable that the polybenzoxazole includes a polybenzoxazole having a structure represented by the following general formula (10).
(In general formula (10), U and V are divalent organic groups.)

In the present invention, U in the general formula (10) is preferably a divalent organic group having 1 to 30 carbon atoms.

In the present invention, U in the general formula (10) is preferably a chain alkylene group having 1 to 8 carbon atoms and in which some or all of the hydrogen atoms are substituted with fluorine atoms.

In the present invention, V in the general formula (10) is preferably a divalent organic group containing an aromatic group.

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

（Ｒ_１４～Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１～５の１価の有機基であり、互いに異なっていても、同一であってもよい。）

（Ｒ_２２は２価の有機基であり、Ｒ_２３～Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。） In the present invention, V in the general formula (10) preferably includes at least one structure represented by the following general formulas (6) to (8).

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different.)

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same.)

(R ₂₂ is a divalent organic group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different. good.)

In the present invention, V in the general formula (10) preferably includes a structure represented by the following general formula (9).

In the present invention, V in the general formula (10) is preferably a divalent organic group having 1 to 40 carbon atoms.

In the present invention, V in the general formula (10) is preferably a divalent chain aliphatic group having 1 to 20 carbon atoms.

In the present invention, it is preferable that the polymer having a phenolic hydroxyl group contains a novolac type phenolic resin.

In the present invention, it is preferable that the polymer having a phenolic hydroxyl group includes a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group.

In the present invention, the rewiring layer includes a first interlayer insulating film layer, a second interlayer insulating film layer, the first interlayer insulating film layer, and the first interlayer insulating film layer when the rewiring layer is viewed in cross section. It is preferable to include an intermediate layer different from the second interlayer insulating film layer and provided between the first interlayer insulating film layer and the second interlayer insulating film layer.

In the present invention, it is preferable that the first interlayer insulating film layer is in contact with the sealing material, and that the i-line transmittance of the first interlayer insulating film layer is 80% or less when converted to a thickness of 10 μm. .

In the present invention, it is preferable that the second interlayer insulating film layer has a different composition from that of the first interlayer insulating film layer.

In the present invention, it is preferable that the i-line transmittance of the second interlayer insulating film layer is different from the i-line transmittance of the first interlayer insulating film layer.

In the present invention, it is preferable that the semiconductor device is a fan-out type wafer level chip size package type semiconductor device.

In the present invention, it is preferable that the i-line transmittance of the interlayer insulating film of the rewiring layer is 70% or less when converted to a thickness of 10 μm.

In the present invention, it is preferable that the i-line transmittance of the interlayer insulating film of the rewiring layer is 60% or less when converted to a thickness of 10 μm.

In the present invention, it is preferable that the i-line transmittance of the interlayer insulating film of the rewiring layer is 50% or less when converted to a thickness of 10 μm.

In the present invention, it is preferable that the i-line transmittance of the interlayer insulating film of the rewiring layer is 40% or less when converted to a thickness of 10 μm.

In the present invention, it is preferable that the i-line transmittance of the interlayer insulating film of the rewiring layer is 30% or less when converted to a thickness of 10 μm.

In the present invention, the i-line transmittance of the interlayer insulating film of the rewiring layer may be 5% or more when converted to a thickness of 10 μm.

In the present invention, the i-line transmittance of the interlayer insulating film of the rewiring layer may be 10% or more when converted to a thickness of 10 μm.

In the present invention, the i-line transmittance of the interlayer insulating film of the rewiring layer may be 20% or more when converted to a thickness of 10 μm.

The method for manufacturing a semiconductor device according to the present invention includes a step of forming a sealing material in contact with a semiconductor chip, and forming a rewiring layer having a larger area than the semiconductor chip in plan view and including an interlayer insulating film , At this time, the sealing material includes a step of directly contacting the interlayer insulating film of the rewiring layer, and the sealing material includes a hardened epoxy resin, and the i-line transmittance of the interlayer insulating film is , is 80% or less when converted to a thickness of 10 μm.

The present invention preferably includes an interlayer insulating film forming step of forming the interlayer insulating film from a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

In the present invention, the interlayer insulating film forming step includes forming the interlayer insulating film using the photosensitive resin composition adjusted with an additive so that the i-line transmittance of the interlayer insulating film is 80% or less when converted to a thickness of 10 μm. Preferably, the method includes a step of forming a film.

According to the present invention, it is possible to provide a semiconductor device with excellent adhesion between an interlayer insulating film in a rewiring layer and a sealing material, and a method for manufacturing the same.

FIG. 1 is a schematic cross-sectional view of a semiconductor device of this embodiment. FIG. 1 is a schematic plan view of a semiconductor device of this embodiment. It is an example of the manufacturing process of the semiconductor device of this embodiment. FIG. 2 is a comparison diagram between a flip-chip BGA and a fan-out type WLCSP.

EMBODIMENT OF THE INVENTION Hereinafter, one embodiment (hereinafter abbreviated as "embodiment") of a semiconductor device of the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited to the following embodiments, and can be implemented with various modifications within the scope of the gist.

(semiconductor device)
As shown in FIG. 1, a semiconductor device (semiconductor IC) 1 includes a semiconductor chip 2, a sealing material (mold resin) 3 that covers the semiconductor chip 2, and a rewiring layer that is in close contact with the semiconductor chip 2 and the sealing material 3. 4.

As shown in FIG. 1, the sealing material 3 covers the surface of the semiconductor chip 2 and is formed to have an area larger than the area of the semiconductor chip 2 when viewed from above (arrow A).

The rewiring layer 4 includes a plurality of wires 5 electrically connected to a plurality of terminals 2a provided on the semiconductor chip 2, and an interlayer insulating film 6 filling in between the wires 5. The plurality of terminals 2a provided on the semiconductor chip 2 and the wiring 5 in the rewiring layer 4 are electrically connected. One end of the wiring 5 is connected to the terminal 2a, and the other end is connected to the external connection terminal 7. The entire surface of the wiring 5 between the terminal 2a and the external connection terminal 7 is covered with an interlayer insulating film 6.

As shown in FIG. 1, the rewiring layer 4 is formed to be larger than the semiconductor chip 2 in plan view (arrow A direction). The semiconductor device 1 shown in FIG. 1 is a fan-out type wafer level chip size package (WLCSP) type semiconductor device. In the fan-out type semiconductor device, the interlayer insulating film 6 in the rewiring layer 4 is in close contact not only with the semiconductor chip 2 but also with the sealing material 3. The semiconductor chip 2 is made of a semiconductor such as silicon, and has a circuit formed therein.

(Rewiring layer)
The rewiring layer 4 is mainly composed of a wiring 5 and an interlayer insulating film 6 covering the wiring 5. The interlayer insulating film 6 is preferably a member with high insulation properties from the viewpoint of preventing unintentional conduction with the wiring 5.

Here, the "rewiring layer 4" in this embodiment is, as described above, a thin film layer having the wiring 5 and the interlayer insulating layer 6, and does not include an interposer or a printed wiring board. Since the semiconductor device (semiconductor IC) 1 uses the rewiring layer 4, it is thinner than a semiconductor device using an interposer such as a flip-chip BGA, as shown in FIG.

In this embodiment, the thickness of the rewiring layer 4 can be approximately 3 to 30 μm. The thickness of the rewiring layer 4 may be 1 μm or more, 5 μm or more, or 10 μm or more. Moreover, the film thickness of the rewiring layer 4 may be 40 μm or less, 30 μm or less, or 20 μm or less.

When the semiconductor device 1 is viewed from above (viewed from arrow A), it is as shown in FIG. 2 below. Note that the sealing material 3 is omitted.

The semiconductor device 1 shown in FIG. 2 is configured such that the area S1 of the rewiring layer 4 is larger than the area S2 of the semiconductor chip 2. There is no particular limitation on the area S1 of the rewiring layer 4, but from the viewpoint of increasing the number of external connection terminals, the area S1 of the rewiring layer 4 should be 1.05 times or more the area S2 of the semiconductor chip 2. It is preferably 1.1 times or more, more preferably 1.2 times or more, and particularly preferably 1.3 times or more. There is no particular limitation on the upper limit, but the area S1 of the rewiring layer 4 may be 50 times or less, 25 times or less, or 10 times or less the area S2 of the semiconductor chip 2. It may be 5 times or less. In FIG. 2, the area of the rewiring layer 4 covered by the semiconductor chip 2 is also included in the area S1 of the rewiring layer 4.

Further, the external shapes of the semiconductor chip 2 and the rewiring layer 4 may be the same or different. In FIG. 2, the external shapes of the semiconductor chip 2 and the rewiring layer 4 are both rectangular and similar shapes, but the shapes may be other than rectangular.

The rewiring layer 4 may be one layer or may be multilayered with two or more layers. The redistribution layer 4 includes interconnections 5 and an interlayer insulating film 6 that fills in between the interconnections 5, but there is no layer in the redistribution layer 4 that is composed only of the interlayer insulating film 6 or a layer that is composed only of the interconnections 5. may be included.

The wiring 5 is not particularly limited as long as it is a highly conductive material, but copper is generally used.

(Encapsulant)
Although there is no particular limitation on the material of the sealing material 3, epoxy resin is preferable from the viewpoint of heat resistance and adhesion to the interlayer insulating film.

As shown in FIG. 1, the sealing material 3 is preferably in direct contact with the semiconductor chip 2 and the rewiring layer 4. Thereby, the sealing performance from the surface of the semiconductor chip 2 to the surface of the rewiring layer 4 can be effectively improved.

The sealing material 3 may be a single layer or may have a structure in which a plurality of layers are laminated. When the sealing material 3 has a laminated structure, it may have a laminated structure of the same kind of materials or a laminated structure of different materials.

(Interlayer insulation film)
This embodiment is characterized in that the interlayer insulating film 6 has a transmittance of i-line (wavelength: 365 nm) of 80% or less. Note that the transmittance is a value when the thickness of the interlayer insulating film 6 is converted to 10 μm. In addition, if the film thickness is not 10 microns (as y microns), the measured transmittance is calculated as {(transmittance/100) ^10/y }×100 to obtain the transmittance converted to 10 microns. was calculated. Although it is not clear why the adhesion between the interlayer insulating film 6 in the redistribution layer 4 and the sealing material 3 is excellent when the i-line (wavelength 365 nm) transmittance of the interlayer insulating film 6 is 80% or less, The present inventors speculate as follows.

In the process of manufacturing a fan-out type semiconductor device, a photosensitive resin composition is applied onto a chip sealing body made up of a semiconductor chip 2 and a sealing material 3 in order to form a rewiring layer 4 . Subsequently, the photosensitive resin composition is exposed to light including i-line. Thereafter, the photosensitive resin composition is developed and cured to selectively form areas where the cured product of the photosensitive resin composition exists and areas where it does not. The cured product of the photosensitive resin composition becomes an interlayer insulating film 6. In addition, wiring 5 is formed in a portion where there is no cured product of the photosensitive resin composition. Usually, the rewiring layer 4 is often multilayered. That is, a photosensitive resin composition is further applied on the interlayer insulating film 6 and the wiring 5, and through exposure, development, and curing steps, a rewiring layer is further formed on the rewiring layer.

During exposure to form the first redistribution layer and second redistribution layer, if the interlayer insulating film has high i-line (wavelength 365 nm) transmittance, the i-line will cause sealing. It is thought that the retaining material 3 decomposes and deteriorates. This reduces the adhesion between the interlayer insulating film and the sealing material 3. In particular, epoxy resins are easily decomposed and deteriorated by i-rays. Therefore, when an epoxy resin is used as the sealing material 3, it is considered that the epoxy resin is decomposed and deteriorated by the i-rays, and the adhesion between the interlayer insulating film and the sealing material 3 is reduced.

The interlayer insulating film 6 of this embodiment has a low i-line transmittance of 80% or less for the i-line (wavelength: 365 nm). Therefore, in this embodiment, it is assumed that the sealing material 3 is less likely to be decomposed or deteriorated by i-rays, and the adhesion between the interlayer insulating film 6 and the sealing material 3 can be increased. Note that even when using an interlayer insulating film with high transmittance for i-line (wavelength 365 nm), it is possible to lower the transmittance for i-line (wavelength 365 nm) by increasing the thickness of the interlayer insulating film. It is. However, there is a disadvantage that the entire semiconductor device becomes thicker. The semiconductor device of this embodiment can reduce the transmittance of i-line (wavelength 365 nm) without increasing the thickness of the entire semiconductor device, and improves the adhesion between the interlayer insulating film in the redistribution layer and the sealing material. Excellent.

The transmittance of the i-line (wavelength: 365 nm) of the interlayer insulating film 6 is preferably 80% or less, and preferably 78% or less, from the viewpoint of adhesion between the interlayer insulating film in the redistribution layer and the sealing material. preferably 76% or less, 74% or less, 72% or less, 70% or less, 68% or less, 66% or less % or less, preferably 64% or less, preferably 62% or less, preferably 60% or less, preferably 58% or less, 56% or less is preferable, preferably 54% or less, preferably 52% or less, preferably 50% or less, preferably 48% or less, preferably 46% or less, 44% It is preferably at most 42%, preferably at most 40%, preferably at most 38%, preferably at most 36%, and preferably at most 34%. Preferably, it is 32% or less, preferably 30% or less, preferably 28% or less, preferably 26% or less, preferably 24% or less, 22% or less It is preferably 20% or less, 18% or less, 16% or less, 14% or less, 12% or less .

Furthermore, the transmittance of the i-line (wavelength: 365 nm) of the interlayer insulating film 6 is preferably 10% or less, preferably 9% or less, preferably 8% or less, and 7% or less. It is preferably at most 6%, preferably at most 5%, preferably at most 4%, preferably at most 3%, and preferably at most 2%.

Further, there is no particular limitation on the lower limit of the i-line (wavelength 365 nm) transmittance of the interlayer insulating film 6, but from the viewpoint of improving the pattern shape of the interlayer insulating film 6, it is preferably 0.1% or more. Preferably, it is 0.5% or more, preferably 1% or more, preferably 3% or more, preferably 5% or more, preferably 10% or more, 15% or more. % or more, preferably 20% or more, preferably 25% or more, preferably 30% or more, preferably 35% or more, 40% or more is preferred.

Furthermore, the interlayer insulating film 6 in the rewiring layer 4 may be multilayered. That is, when the rewiring layer 4 is viewed in cross section, the rewiring layer 4 includes a first interlayer insulating film layer, a second interlayer insulating film layer, the first interlayer insulating film layer, and the second interlayer insulating film layer. The interlayer may include an intermediate layer that is different from the insulating film layer and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer. The intermediate layer is, for example, the wiring 5.

The first interlayer insulating film layer and the second interlayer insulating film layer may have the same composition or may have different compositions. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same i-line transmittance or may have different i-line transmittances. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same thickness or may have different thicknesses. It is preferable that the first interlayer insulating film layer and the second interlayer insulating film layer have different compositions, different i-ray transmittances, and different film thicknesses, since this allows each interlayer insulating film layer to have different properties.

When the interlayer insulating film 6 is multilayered, it is sufficient that the i-line transmittance of at least one of the plurality of layers is 80% or less. The i-line transmittance of the layer) is preferably 80% or less. If the i-line transmittance of the interlayer insulating film layer in contact with the sealing material 3 is 80% or less, the i-line cannot be efficiently absorbed when forming the interlayer insulating film layer not in contact with the sealing material 3. , deterioration of the sealing material can be prevented. The preferable i-line transmittance range of each interlayer insulating film layer is the same as the preferable i-line transmittance range of the interlayer insulating film 6.

(Composition of interlayer insulating film)
Although there is no particular limitation on the composition of the interlayer insulating film 6, it is preferably a film containing at least one compound selected from polyimide, polybenzoxazole, or a polymer having a phenolic hydroxyl group, for example.

(Resin composition forming interlayer insulating film)
The resin composition used to form the interlayer insulating film 6 is not particularly limited as long as it is a photosensitive resin composition, but is selected from polyimide precursors, polybenzoxazole precursors, or polymers having phenolic hydroxyl groups. A photosensitive resin composition containing at least one compound is preferred. The resin composition used to form the interlayer insulating film 6 may be in liquid form or film form. Further, the resin composition used to form the interlayer insulating film 6 may be a negative photosensitive resin composition or a positive photosensitive resin composition.

In this embodiment, a pattern obtained by exposing and developing a photosensitive resin composition is referred to as a relief pattern, and a relief pattern obtained by heating and curing is referred to as a cured relief pattern. This cured relief pattern becomes the interlayer insulating film 6.

<Polyimide precursor composition>
(A) Photosensitive resin Examples of the photosensitive resin used in the polyimide precursor composition include polyamide, polyamic acid ester, and the like. For example, as the polyamic acid ester, a polyamic acid ester containing a repeating unit represented by the following general formula (11) can be used.

Ｒ^１及びＲ^２は、それぞれ独立に、水素原子、炭素数１～３０の飽和脂肪族基、芳香族基、炭素炭素不飽和二重結合を有する一価の有機基、又は、炭素炭素不飽和二重結合を有する一価のイオンである。Ｘ^１は４価の有機基であり、Ｙ^１は２価の有機基であり、ｍは１以上の整数である。ｍは２以上が好ましく、５以上がより好ましい。

R ¹ and R ² are each independently a hydrogen atom, a saturated aliphatic group having 1 to 30 carbon atoms, an aromatic group, a monovalent organic group having a carbon-carbon unsaturated double bond, or a carbon-carbon unsaturated group. It is a monovalent ion with a double bond. X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more. m is preferably 2 or more, more preferably 5 or more.

When R ¹ and R ² in the above general formula (11) exist as monovalent cations, O is negatively charged (exists as -O 2 ^- ). Moreover, X ¹ and X ¹ may contain a hydroxyl group.

R ¹ and R ² in general formula (11) are more preferably a monovalent organic group represented by the following general formula (12) or a monovalent organic group represented by the following general formula (13). It has a structure with an ammonium ion at the end of the group.

（一般式（１２）中、Ｒ₃、Ｒ₄及びＲ₅は、それぞれ独立に、水素原子又は炭素数１～５の有機基であり、そしてｍ₁は、１～２０の整数である。）

(In general formula (12), R ₃ , R ₄ and R ₅ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₁ is an integer of 1 to 20.)

（一般式（１３）中、Ｒ₆、Ｒ₇及びＲ₈は、それぞれ独立に、水素原子又は炭素数１～５の有機基であり、そしてｍ₂は、１～２０の整数）である。

(In general formula (13), R ₆ , R ₇ and R ₈ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₂ is an integer of 1 to 20).

A plurality of polyamic acid esters represented by the general formula (11) may be mixed. Alternatively, a polyamic acid ester obtained by copolymerizing polyamic acid esters represented by the general formula (11) may be used.

Although there is no particular limitation on X ¹ , from the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3 , it is preferable that X ¹ is a tetravalent organic group containing an aromatic group. Specifically, X ¹ is preferably a tetravalent organic group containing at least one structure represented by the following general formulas (2) to (4).

（一般式（４）中、Ｒ₉は酸素原子、硫黄原子、２価の有機基の何れかである。）

(In general formula (4), R ₉ is an oxygen atom, a sulfur atom, or a divalent organic group.)

R ₉ in the general formula (4) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom. R ₉ may contain a hydroxyl group.

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, ^X1 is particularly preferably a tetravalent organic group containing a structure represented by the following general formula (5).

Although Y ¹ is not particularly limited, from the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, Y ¹ is preferably a divalent organic group containing an aromatic group. Specifically, Y ¹ is preferably a divalent organic group containing at least one structure represented by the following general formulas (6) to (8).

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different.)

（Ｒ_１４～Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１～５の１価の有機基であり、互いに異なっていても、同一であってもよい。）

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same.)

（Ｒ_２２は２価の有機基であり、Ｒ_２３～Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₂₂ is a divalent organic group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different. good.)

R ₂₂ in the general formula (8) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, ^Y1 is particularly preferably a divalent organic group containing a structure represented by the following general formula (9).

In the above-mentioned polyamic acid ester, X ¹ in the repeating unit is derived from the tetracarboxylic dianhydride used as a raw material, and Y ¹ is derived from the diamine used as a raw material.

Examples of the tetracarboxylic dianhydride used as a raw material include pyromellitic anhydride, diphenyl ether-3,3',4,4'-tetracarboxylic dianhydride, benzophenone-3,3',4,4'- Tetracarboxylic dianhydride, biphenyl-3,3',4,4'-tetracarboxylic dianhydride, diphenylsulfone-3,3',4,4'-tetracarboxylic dianhydride, diphenylmethane-3, 3',4,4'-tetracarboxylic dianhydride, 2,2-bis(3,4-phthalic anhydride)propane, 2,2-bis(3,4-phthalic anhydride)-1,1, Examples include, but are not limited to, 1,3,3,3-hexafluoropropane. Further, these may be used alone or in combination of two or more.

Examples of diamines used as raw materials include p-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, and 4,4'-diaminodiphenyl. Sulfide, 3,4'-diaminodiphenylsulfide, 3,3'-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, 4,4 '-Diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'- Diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis (3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]sulfone, bis[4-(3-aminophenoxy)phenyl]sulfone, 4,4-bis(4-aminophenoxy)biphenyl, 4 , 4-bis(3-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenyl) ) Benzene, 1,3-bis(4-aminophenyl)benzene, 9,10-bis(4-aminophenyl)anthracene, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4- aminophenyl)hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)phenyl)propane, 2,2-bis[4-(4-aminophenoxy)phenyl)hexafluoropropane, 1,4-bis Examples include (3-aminopropyldimethylsilyl)benzene, ortho-tolidine sulfone, and 9,9-bis(4-aminophenyl)fluorene. Further, some of the hydrogen atoms on these benzene rings may be substituted. Further, these may be used alone or in combination of two or more.

In the synthesis of polyamic acid ester (A), it is usually preferable to use a method in which a tetracarboxylic acid diester obtained by carrying out an esterification reaction of a tetracarboxylic dianhydride, which will be described later, is directly subjected to a condensation reaction with a diamine. .

The alcohol used in the above-mentioned esterification reaction of the tetracarboxylic dianhydride is an alcohol having an olefinic double bond. Specific examples include, but are not limited to, 2-hydroxyethyl methacrylate, 2-methacryloyloxyethyl alcohol, glycerin diacrylate, and glycerin dimethacrylate. These alcohols can be used alone or in combination of two or more.

As for the specific method for synthesizing the polyamic acid ester (A) used in this embodiment, conventionally known methods can be employed. As for the synthesis method, for example, the method shown in International Publication No. 00/43439 pamphlet can be mentioned. That is, the tetracarboxylic acid diester is once converted into the tetracarboxylic acid diester diacyl chloride, and the tetracarboxylic acid diester diacyl chloride and the diamine are subjected to a condensation reaction in the presence of a basic compound to form the polyamic acid ester (A). Examples include methods for manufacturing. Another example is a method of producing polyamic acid ester (A) by subjecting a tetracarboxylic acid diester and a diamine to a condensation reaction in the presence of an organic dehydrating agent.

Examples of organic dehydrating agents include dicyclohexylcarbodiimide (DCC), diethylcarbodiimide, diisopropylcarbodiimide, ethylcyclohexylcarbodiimide, diphenylcarbodiimide, 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide, 1-cyclohexyl-3-(3 -dimethylaminopropyl) carbodiimide hydrochloride and the like.

The weight average molecular weight of the polyamic acid ester (A) used in this embodiment is preferably 6,000 to 150,000, more preferably 7,000 to 50,000, and even more preferably 7,000 to 20,000.

(B1) Photoinitiator When the resin composition used to form the interlayer insulating film 6 is a negative photosensitive resin, a photoinitiator is added. Examples of photoinitiators include benzophenone, methyl o-benzoylbenzoate, 4-benzoyl-4'-methyldiphenylketone, dibenzylketone, and benzophenone derivatives such as fluorenone, 2,2'-diethoxyacetophenone, and 2,2'-diethoxyacetophenone. -Acetophenone derivatives such as hydroxy-2-methylpropiophenone, thioxanthone derivatives such as 1-hydroxycyclohexylphenylketone, thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, and diethylthioxanthone, benzyl, benzyl dimethyl ketal, and benzyl- Benzyl derivatives such as β-methoxyethyl acetal, benzoin derivatives such as benzoin methyl ether, 2,6-di(4'-diazidobenzal)-4-methylcyclohexanone, and 2,6'-di(4'-diazidobenzal)cyclohexanone, etc. azides, 1-phenyl-1,2-butanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2-(O -ethoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-benzoyl)oxime, 1,3-diphenylpropanetrione-2-(O-ethoxycarbonyl)oxime, 1-phenyl-3-ethoxypropanetrione-2 Oximes such as -(O-benzoyl)oxime, N-arylglycines such as N-phenylglycine, peroxides such as benzoyl peroxide, aromatic biimidazole, and titanocenes are used. Among these, the above oximes are preferred in terms of photosensitivity.

The amount of these photoinitiators added is preferably 1 to 40 parts by weight, more preferably 2 to 20 parts by weight, per 100 parts by weight of the polyamic acid ester (A). By adding 1 part by mass or more of a photoinitiator to 100 parts by mass of polyamic acid ester (A), excellent photosensitivity can be achieved. Further, by adding 40 parts by mass or less, thick film curability is excellent.

(B2) Photoacid generator When the resin composition used to form the interlayer insulating film 6 is a positive photosensitive resin, a photoacid generator is added. By containing a photoacid generator, acid is generated in the ultraviolet-exposed area, and the solubility of the exposed area in an alkaline aqueous solution increases. Thereby, it can be used as a positive photosensitive resin composition.

Examples of the photoacid generator include quinonediazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and iodonium salts. Among these, quinonediazide compounds are preferably used because they exhibit an excellent dissolution inhibiting effect and can provide a highly sensitive positive photosensitive resin composition. Further, two or more kinds of photoacid generators may be contained.

(C) Additives The i-ray transmittance of the interlayer insulating film can be adjusted by adjusting the amount of additives. Examples of additives that reduce i-ray transmittance include 2-(5-chloro-2H-benzotriazol-2-yl)-6-t-butyl-4-methylphenol, 2,4,6-tris( 2-hydroxy-4-hexyloxy-3-methylphenyl)-1,3,5-triazine and the like can be used.

(D) Solvent There is no particular limitation as long as each component can be dissolved or dispersed in the solvent. Examples include N-methyl-2-pyrrolidone, γ-butyrolactone, acetone, methyl ethyl ketone, dimethyl sulfoxide and the like. These solvents can be used in an amount of 30 to 1500 parts by mass based on 100 parts by mass of the photosensitive resin (A), depending on the coating film thickness and viscosity.

(E) Others The polyimide precursor composition may contain a crosslinking agent. As the crosslinking agent, use a crosslinking agent that can crosslink the (A) photosensitive resin or that can itself form a crosslinked network when the polyimide precursor composition is exposed to light, developed, and then heat cured. be able to. By using a crosslinking agent, the heat resistance and chemical resistance of the cured film (interlayer insulating film) can be further strengthened.

In addition, it may contain a sensitizer to improve photosensitivity, an adhesion aid to improve adhesion to the base material, and the like.

(developing)
After exposing the polyimide precursor composition, unnecessary parts are washed away with a developer. The developer used is not particularly limited, but in the case of a polyimide precursor composition developed with a solvent, N,N-dimethylformamide, dimethyl sulfoxide, N,N-dimethylacetamide, N-methyl-2 - Good solvents such as pyrrolidone, cyclopentanone, γ-butyrolactone, and acetic acid esters, mixed solvents of these good solvents and poor solvents such as lower alcohols, water, and aromatic hydrocarbons are used. After development, rinse with a poor solvent or the like if necessary.

In the case of a polyimide precursor composition that is developed with an alkaline aqueous solution, an aqueous solution of tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, Aqueous solutions of alkaline compounds such as dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, and hexamethylenediamine are preferred.

(thermal curing)
After development, the polyimide precursor is ring-closed by heating to form polyimide. This polyimide becomes a cured relief pattern, that is, an interlayer insulating film 6.

Although there is no particular limitation on the heating temperature, it is preferable that the heating temperature is low from the viewpoint of influence on other members. The temperature is preferably 250 degrees or less, more preferably 230 degrees or less, more preferably 200 degrees or less, and particularly preferably 180 degrees or less.

<Polyimide>
The structure of the cured relief pattern formed from the polyimide precursor composition is expressed by the following general formula (1).

X ¹ , Y ¹ , and m in general formula (1) are the same as X ¹ , Y ¹ , and m in general formula (11), where X ¹ is a tetravalent organic group, and Y ¹ is a divalent organic group. It is an organic group, and m is an integer of 1 or more. Preferable X ¹ , Y ¹ , and m in general formula (11) are also preferable in the polyimide of general formula (1) for the same reason.

In the case of alkali-soluble polyimide, the terminal of the polyimide may be a hydroxyl group.

<Polybenzoxazole precursor composition>
(A) Photosensitive resin As the photosensitive resin used in the polybenzoxazole precursor composition, poly(o-hydroxyamide) containing a repeating unit represented by the following general formula (14) can be used.

（一般式（１４）中、ＵとＶは２価の有機基である。）

(In general formula (14), U and V are divalent organic groups.)

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, U is preferably a divalent organic group having 1 to 30 carbon atoms, and a chain alkylene group having 1 to 15 carbon atoms (however, A chain alkylene group in which the hydrogen atom may be substituted with a halogen atom is more preferable, and a chain alkylene group having 1 to 8 carbon atoms and in which the hydrogen atom is substituted with a fluorine atom is particularly preferable.

Further, from the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, V is preferably a divalent organic group containing an aromatic group, more preferably a divalent organic group containing the following general formulas (6) to (8). ) is preferably a divalent organic group containing at least one structure represented by:

（Ｒ_１０、Ｒ_１１、Ｒ_１２及びＲ_１３は、水素原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different.)

（Ｒ_１４～Ｒ_２１は、水素原子、ハロゲン原子、炭素数が１～５の１価の有機基であり、互いに異なっていても、同一であってもよい。）

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same.)

（Ｒ_２２は２価の有機基であり、Ｒ_２３～Ｒ_３０は、水素原子、ハロゲン原子、炭素数が１～５の１価の脂肪族基であり、同一であっても異なっていてもよい。）

(R ₂₂ is a divalent organic group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different. good.)

R ₂₂ in the general formula (8) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, V is particularly preferably a divalent organic group containing a structure represented by the following general formula (9).

From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, V is preferably a divalent organic group having 1 to 40 carbon atoms, more preferably a divalent chain aliphatic group having 1 to 40 carbon atoms. Preferably, a divalent chain aliphatic group having 1 to 20 carbon atoms is particularly preferable.

Polybenzoxazole precursors can generally be synthesized from dicarboxylic acid derivatives and hydroxy group-containing diamines. Specifically, it can be synthesized by converting a dicarboxylic acid derivative into a dihalide derivative and then reacting it with diamines. As the dihalide derivative, dichloride derivatives are preferred.

A dichloride derivative can be synthesized by reacting a dicarboxylic acid derivative with a halogenating agent. As the halogenating agent, thionyl chloride, phosphoryl chloride, phosphorus oxychloride, phosphorus pentachloride, etc., which are used in ordinary acid chloridation reactions of carboxylic acids, can be used.

The dichloride derivative can be synthesized by a method in which a dicarboxylic acid derivative and the above-mentioned halogenating agent are reacted in a solvent, a method in which the reaction is carried out in an excess of the halogenating agent, and then the excess is distilled off.

Examples of the dicarboxylic acid used in the dicarboxylic acid derivative include isophthalic acid, terephthalic acid, 2,2-bis(4-carboxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 4,4 '-Dicarboxybiphenyl, 4,4'-dicarboxydiphenyl ether, 4,4'-dicarboxytetraphenylsilane, bis(4-carboxyphenyl)sulfone, 2,2-bis(p-carboxyphenyl)propane, 5- tert-butyl isophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6-naphthalene dicarboxylic acid, malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n -Butylmalonic acid, succinic acid, tetrafluorosuccinic acid, methylsuccinic acid, 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, hexafluoroglutaric acid, 2 -Methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl-3-methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipic acid , octafluoroadipic acid, pimelic acid, 2,2,6,6-tetramethylpimelic acid, suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid, hexadecafluorosebacic acid, 1,9-nonanedioic acid , dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, hexadecanedioic acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid, heneicosanedioic acid, docosanedioic acid, tricosanedioic acid, tetracosane Examples include diacid, pentacosanedioic acid, hexacosanedioic acid, heptacosanedioic acid, octacosanedioic acid, nonacosanedioic acid, triacontanedioic acid, hentriacontanedioic acid, dotriacontanedioic acid, diglycolic acid, and the like. A mixture of these may be used.

Examples of hydroxy group-containing diamines include 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, and bis(3-amino-4-hydroxyphenyl). Propane, bis(4-amino-3-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)sulfone, bis(4-amino-3-hydroxyphenyl)sulfone, 2,2-bis(3-amino -4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 2,2-bis(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3 - Hexafluoropropane and the like. A mixture of these may be used.

(B2) Photoacid generator The photoacid generator has the function of increasing the solubility of the light irradiated area in an aqueous alkaline solution. Examples of the photoacid generator include diazonaphthoquinone compounds, aryldiazonium salts, diaryliodonium salts, triarylsulfonium salts, and the like. Among these, diazonaphthoquinone compounds are preferred because of their high sensitivity.

(C) Additives The preferable types and amounts of additives are the same as those described in the section of the polyimide precursor composition.

(D) Solvent There is no particular limitation as long as the solvent can dissolve or disperse each component.

(E) Others The polybenzoxazole precursor composition can contain a crosslinking agent, a sensitizer, an adhesion aid, a thermal acid generator, and the like.

(developing)
After exposing the polybenzoxazole precursor composition, unnecessary portions are washed away with a developer. There are no particular limitations on the developer used, but for example, alkaline aqueous solutions such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide are preferred. It is mentioned as.

Although the above description focused on a positive type polybenzoxazole precursor composition, a negative type polybenzoxazole precursor composition may also be used.

(thermal curing)
After development, the polybenzoxazole precursor is ring-closed by heating to form polybenzoxazole. This polybenzoxazole becomes a cured relief pattern, that is, an interlayer insulating film 6.

Although there is no particular limitation on the heating temperature, it is preferable that the heating temperature be a low temperature from the viewpoint of influence on other members. The temperature is preferably 250 degrees or less, more preferably 230 degrees or less, more preferably 200 degrees or less, and particularly preferably 180 degrees or less.

<Polybenzoxazole>
The structure of the cured relief pattern formed from the polybenzoxazole precursor composition is represented by the following general formula (10).

U and V in general formula (10) are the same as U and V in general formula (14). Preferred U and V in general formula (14) are also preferred in the polybenzoxazole of general formula (10) for the same reason.

<Polymer with phenolic hydroxyl group>
(A) Photosensitive resin A resin that has a phenolic hydroxyl group in its molecule and is soluble in alkali. Specific examples thereof include vinyl polymers containing monomer units having phenolic hydroxyl groups such as poly(hydroxystyrene), phenolic resins, poly(hydroxyamides), poly(hydroxyphenylene) ethers, and polynaphthols.

Among these, phenolic resins are preferred, and novolak-type phenolic resins are particularly preferred, since they are inexpensive and have small volumetric shrinkage upon curing.

Phenol resins are polycondensation products of phenol or its derivatives and aldehydes. Polycondensation is carried out in the presence of a catalyst such as an acid or a base. The phenolic resin obtained when an acid catalyst is used is particularly referred to as a novolak type phenolic resin.

Examples of phenol derivatives include phenol, cresol, ethylphenol, propylphenol, butylphenol, amylphenol, benzylphenol, adamantanephenol, benzyloxyphenol, xylenol, catechol, resorcinol, ethylresorcinol, hexylresorcinol, hydroquinone, pyrogallol, and phlorog. Rucinol, 1,2,4-trihydroxybenzene, pararosolic acid, biphenol, bisphenol A, bisphenol AF, bisphenol B, bisphenol F, bisphenol S, dihydroxydiphenylmethane, 1,1-bis(4-hydroxyphenyl)cyclohexane, 1, 4-bis(3-hydroxyphenoxybenzene), 2,2-bis(4-hydroxy-3-methylphenyl)propane, α,α'-bis(4-hydroxyphenyl)-1,4-diisopropylbenzene, 9, 9-bis(4-hydroxy-3-methylphenyl)fluorene, 2,2-bis(3-cyclohexyl-4-hydroxyphenyl)propane, 2,2-bis(2-hydroxy-5-biphenylyl)propane, dihydroxy Examples include benzoic acid.

Examples of aldehyde compounds include formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, pivalaldehyde, butyraldehyde, pentanal, hexanal, trioxane, glyoxal, cyclohexylaldehyde, diphenylacetaldehyde, ethylbutyraldehyde, benzaldehyde, glyoxylic acid, 5-norbornene-2 - Carboxaldehyde, malondialdehyde, succindialdehyde, glutaraldehyde, salicylaldehyde, naphthaldehyde, terephthalaldehyde and the like.

It is preferable that component (A) contains (a) a phenol resin having no unsaturated hydrocarbon group, and (b) a modified phenol resin having an unsaturated hydrocarbon group. It is more preferable that the component (b) is further modified by a reaction between a phenolic hydroxyl group and a polybasic acid anhydride.

In addition, as component (b), from the viewpoint of further improving mechanical properties (elongation at break, elastic modulus, and residual stress), a phenolic resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms is used. It is preferable.

(b) Modified phenolic resin having an unsaturated hydrocarbon group is generally a compound having phenol or its derivative and an unsaturated hydrocarbon group (preferably one having 4 to 100 carbon atoms) (hereinafter referred to simply as "unsaturated hydrocarbon resin" in some cases). (hereinafter referred to as "unsaturated hydrocarbon group-modified phenol derivatives") with aldehydes, or phenol resins and unsaturated hydrocarbons. It is a reaction product with a group-containing compound.

The phenol derivative mentioned here can be the same as the phenol derivative mentioned above as the raw material for the phenol resin as component (A).

The unsaturated hydrocarbon group of the unsaturated hydrocarbon group-containing compound preferably contains two or more unsaturated groups from the viewpoint of resist pattern adhesion and thermal shock resistance. In addition, from the viewpoint of compatibility in a resin composition and flexibility of a cured film, the unsaturated hydrocarbon group-containing compound preferably has 8 to 80 carbon atoms, and more preferably has 10 to 60 carbon atoms. preferable.

Examples of unsaturated hydrocarbon group-containing compounds include unsaturated hydrocarbons having 4 to 100 carbon atoms, polybutadiene having a carboxyl group, epoxidized polybutadiene, linolyl alcohol, oleyl alcohol, unsaturated fatty acids, and unsaturated fatty acid esters. . Suitable unsaturated fatty acids include crotonic acid, myristoleic acid, palmitoleic acid, oleic acid, elaidic acid, vaccenic acid, gadoleic acid, erucic acid, nervonic acid, linoleic acid, α-linolenic acid, eleostearic acid, stearidone. The acids include arachidonic acid, eicosapentaenoic acid, sardine acid and docosahexaenoic acid. Among these, esters of unsaturated fatty acids having 8 to 30 carbon atoms and monovalent to trivalent alcohols having 1 to 10 carbon atoms are particularly preferred; Particularly preferred are esters with glycerin.

Esters of unsaturated fatty acids having 8 to 30 carbon atoms and glycerin are commercially available as vegetable oils. Vegetable oils include non-drying oils with an iodine value of 100 or less, semi-drying oils with an iodine value of more than 100 and less than 130, and drying oils with an iodine value of 130 or more. Non-drying oils include, for example, olive oil, morning sunflower seed oil, cashew seed oil, sasanqua oil, camellia oil, castor oil and peanut oil. Semi-drying oils include, for example, corn oil, cottonseed oil and sesame oil. Drying oils include, for example, tung oil, linseed oil, soybean oil, walnut oil, safflower oil, sunflower oil, perilla oil, and mustard oil. Furthermore, processed vegetable oils obtained by processing these vegetable oils may also be used.

Among the above-mentioned vegetable oils, it is preferable to use non-drying oils from the viewpoint of preventing gelation due to excessive progress of the reaction and improving yield in the reaction of phenol or its derivatives or phenolic resins with vegetable oils. On the other hand, from the viewpoint of improving the adhesion, mechanical properties, and thermal shock resistance of the resist pattern, it is preferable to use a drying oil. Among the drying oils, tung oil, linseed oil, soybean oil, walnut oil, and safflower oil are preferred, and tung oil and linseed oil are more preferred, since they can more effectively and reliably exhibit the effects of the present invention.

These unsaturated hydrocarbon group-containing compounds may be used alone or in combination of two or more.

In preparing component (b), first, the above-mentioned phenol derivative and the above-mentioned unsaturated hydrocarbon group-containing compound are reacted to produce an unsaturated hydrocarbon group-modified phenol derivative. The reaction is preferably carried out at 50 to 130°C. From the viewpoint of improving the flexibility of the cured film (resist pattern), the reaction ratio of the phenol derivative and the unsaturated hydrocarbon group-containing compound is 1 to 100 parts by mass of the phenol derivative to 100 parts by mass of the phenol derivative. It is preferably 5 parts by mass, more preferably 5 to 50 parts by mass. If the amount of the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the heat resistance of the cured film tends to decrease. In the above reaction, p-toluenesulfonic acid, trifluoromethanesulfonic acid, etc. may be used as a catalyst, if necessary.

By polycondensing the unsaturated hydrocarbon group-modified phenol derivative produced by the above reaction with aldehydes, a phenol resin modified with an unsaturated hydrocarbon group-containing compound is produced. As the aldehydes, the same ones as those mentioned above as the aldehydes used to obtain the phenol resin can be used.

The reaction between the aldehyde and the unsaturated hydrocarbon group-modified phenol derivative is a polycondensation reaction, and conventionally known synthesis conditions for phenol resins can be used. The reaction is preferably carried out in the presence of a catalyst such as an acid or a base, and more preferably an acid catalyst. Examples of acid catalysts include hydrochloric acid, sulfuric acid, formic acid, acetic acid, p-toluenesulfonic acid, and oxalic acid. These acid catalysts can be used alone or in combination of two or more.

The above reaction is usually preferably carried out at a reaction temperature of 100 to 120°C. Further, the reaction time varies depending on the type and amount of the catalyst used, but is usually 1 to 50 hours. After the reaction is completed, the reaction product is dehydrated under reduced pressure at a temperature of 200° C. or lower to obtain a phenol resin modified with an unsaturated hydrocarbon group-containing compound. Note that a solvent such as toluene, xylene, methanol, etc. can be used in the reaction.

Phenol resins modified with unsaturated hydrocarbon group-containing compounds can also be obtained by polycondensing the above-mentioned unsaturated hydrocarbon group-modified phenol derivatives with aldehydes together with compounds other than phenol, such as m-xylene. . In this case, the molar ratio of the compound other than phenol to the compound obtained by reacting the phenol derivative and the unsaturated hydrocarbon group-containing compound is preferably less than 0.5.

Component (b) can also be obtained by reacting the phenolic resin of component (a) with an unsaturated hydrocarbon group-containing compound.

As the unsaturated hydrocarbon group-containing compound to be reacted with the phenol resin, the same compounds as the above-mentioned unsaturated hydrocarbon group-containing compounds can be used.

The reaction between the phenol resin and the unsaturated hydrocarbon group-containing compound is usually preferably carried out at 50 to 130°C. In addition, from the viewpoint of improving the flexibility of the cured film (resist pattern), the reaction ratio between the phenol resin and the unsaturated hydrocarbon group-containing compound is 100 parts by mass of the phenol resin to 1 part by mass of the unsaturated hydrocarbon group-containing compound. It is preferably from 100 parts by weight, more preferably from 2 to 70 parts by weight, even more preferably from 5 to 50 parts by weight. If the amount of the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the possibility of gelation during the reaction increases, and the cured film tends to decrease. The heat resistance of the film tends to decrease. At this time, p-toluenesulfonic acid, trifluoromethanesulfonic acid, etc. may be used as a catalyst, if necessary. Note that a solvent such as toluene, xylene, methanol, tetrahydrofuran, etc. can be used in the reaction.

The phenolic hydroxyl groups remaining in the phenolic resin modified with the unsaturated hydrocarbon group-containing compound produced by the above method are further reacted with a polybasic acid anhydride. Thereby, an acid-modified phenol resin can also be used as the component (b). By acid-modifying with a polybasic acid anhydride, a carboxy group is introduced, and the solubility of component (b) in an alkaline aqueous solution (developer) is further improved.

The polybasic acid anhydride is not particularly limited as long as it has an acid anhydride group formed by dehydration condensation of the carboxyl groups of a polybasic acid having a plurality of carboxyl groups. Examples of polybasic acid anhydrides include phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride. acids, dibasic acid anhydrides such as methylhexahydrophthalic anhydride, nadic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride and trimellitic anhydride, biphenyl Tetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenyl ethertetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic anhydride, and benzophenonetetracarboxylic dianhydride Examples include aromatic tetrabasic acid dianhydrides such as anhydrides. These may be used alone or in combination of two or more. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably one or more selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride. . In this case, there is an advantage that a resist pattern having a better shape can be formed.

Further, (A) the alkali-soluble resin having a phenolic hydroxyl group can further contain a phenol resin that has been acid-modified by reacting with a polybasic acid anhydride. When component (A) contains a phenol resin acid-modified with a polybasic acid anhydride, the solubility of component (A) in an alkaline aqueous solution (developer) is further improved.

Examples of the polybasic acid anhydride include phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methyltetrahydro anhydride. Dibasic acid anhydrides such as phthalic acid, methylhexahydrophthalic anhydride, nadic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride, trimellitic anhydride, Biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenyl ethertetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic anhydride, benzophenonetetracarboxylic acid Examples include aliphatic dianhydrides and aromatic tetrabasic acid dianhydrides. These may be used alone or in combination of two or more. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, for example, one or more selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride. More preferred.

(B2) Photoacid generator Examples of the photoacid generator include diazonaphthoquinone compounds, aryldiazonium salts, diaryliodonium salts, triarylsulfonium salts, and the like. Among these, diazonaphthoquinone compounds are preferred because of their high sensitivity.

(C) Additives The preferable types and amounts of additives are the same as those described in the section of the polyimide precursor composition.

(D) Solvent There is no particular limitation as long as the solvent can dissolve or disperse each component.

(E) Others It may contain a thermal crosslinking agent, a sensitizer, an adhesion aid, a dye, a surfactant, a dissolution promoter, a crosslinking promoter, and the like. Among these, by containing a thermal crosslinking agent, when the photosensitive resin film after pattern formation is heated and cured, the thermal crosslinking agent component reacts with the component (A) to form a crosslinked structure. This enables curing at low temperatures and prevents film brittleness and film melting. Specifically, as the thermal crosslinking agent component, a compound having a phenolic hydroxyl group, a compound having a hydroxymethylamino group, and a compound having an epoxy group can be preferably used.

(developing)
After exposing the polymer having phenolic hydroxyl groups, unnecessary parts are washed away with a developer. There are no particular limitations on the developer used, but examples include alkaline aqueous solutions such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide (TMAH). is preferably used.

(thermal curing)
After development, the polymers having phenolic hydroxyl groups are thermally crosslinked by heating. This crosslinked polymer becomes a cured relief pattern, that is, an interlayer insulating film 6.

Although there is no particular limitation on the heating temperature, it is preferable that the heating temperature be a low temperature from the viewpoint of influence on other members. The temperature is preferably 250 degrees or less, more preferably 230 degrees or less, more preferably 200 degrees or less, and particularly preferably 180 degrees or less.

(Method for manufacturing semiconductor devices)
A method for manufacturing a semiconductor device in this embodiment will be explained using FIG. 3. In FIG. 3A, a pre-processed wafer 10 is prepared. Then, in FIG. 3B, the pre-processed wafer 10 is diced to form a plurality of semiconductor chips 2. The semiconductor chip 2 may be a purchased item. The semiconductor chips 2 prepared in this way are pasted onto the support 11 at predetermined intervals, as shown in FIG. 3C.

Subsequently, molding resin 12 is applied from the top of the semiconductor chip 2 to the top of the support 11, and the mold is sealed as shown in FIG. 3D. Subsequently, the support 11 is peeled off and the mold resin 12 is turned over (see FIG. 3E). As shown in FIG. 3E, the semiconductor chip 2 and the mold resin 12 appear on substantially the same plane. Subsequently, in the step shown in FIG. 3F, a photosensitive resin composition 13 is applied onto the semiconductor chip 2 and the mold resin 12. Then, the applied photosensitive resin composition 13 is exposed and developed to form a relief pattern (relief pattern forming step). Note that the photosensitive resin composition 13 may be either positive type or negative type. Furthermore, the relief pattern is heated to form a cured relief pattern (interlayer insulating film forming step). Furthermore, wiring is formed in locations where the cured relief pattern is not formed (wiring formation step).

In this embodiment, the above-described relief pattern forming process, interlayer insulating film forming process, and wiring forming process are combined into a rewiring layer forming process for forming a rewiring layer connected to the semiconductor chip 2.

The interlayer insulating film in the redistribution layer may be multilayered. Therefore, the rewiring layer forming step may include a plurality of relief pattern forming steps, a plurality of interlayer insulating film forming steps, and a plurality of wiring forming steps.

Then, in FIG. 3G, a plurality of external connection terminals 7 corresponding to each semiconductor chip 2 are formed (bump formation), and the semiconductor chips 2 are diced. Thereby, a semiconductor device (semiconductor IC) 1 can be obtained as shown in FIG. 3H. In this embodiment, a plurality of fan-out type semiconductor devices 1 can be obtained by the manufacturing method shown in FIG.

In this embodiment, the i-line transmittance of the cured relief pattern (interlayer insulating film) formed through the above steps can be 80% or less. Here, the i-line transmittance of the interlayer insulating film can be adjusted by adjusting the amount of additive.

In the present embodiment, in the interlayer insulating film forming step described above, the interlayer insulating film may be formed from a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. preferable.

Hereinafter, examples carried out in order to clarify the effects of the present invention will be described. In the examples, the following materials and measurement methods were used.

Hereinafter, examples carried out in order to clarify the effects of the present invention will be described.

(Polymer A-1: Synthesis of polyimide precursor)
4,4'-oxydiphthalic dianhydride (ODPA) as a tetracarboxylic dianhydride was placed in a 2-liter separable flask. Further, 2-hydroxyethyl methacrylate (HEMA) and γ-butyrolactone were added and stirred at room temperature, and pyridine was added while stirring to obtain a reaction mixture. After the exotherm due to the reaction was completed, the mixture was allowed to cool to room temperature and left for 16 hours.

Next, under ice cooling, a solution of dicyclohexylcarbodiimide (DCC) dissolved in γ-butyrolactone was added to the reaction mixture over 40 minutes with stirring. Subsequently, a suspension of 4,4'-diaminodiphenyl ether (DADPE) in γ-butyrolactone as a diamine was added over 60 minutes with stirring. After further stirring at room temperature for 2 hours, ethyl alcohol was added and stirred for 1 hour, and then γ-butyrolactone was added. A precipitate formed in the reaction mixture was removed by filtration to obtain a reaction solution.

The resulting reaction solution was added to ethyl alcohol to produce a precipitate consisting of a crude polymer. The produced crude polymer was filtered and dissolved in tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was dropped into water to precipitate the polymer, and the obtained precipitate was filtered and dried under vacuum to obtain a powdery polymer (polyimide precursor (polymer A-1)). . The mass of the compound used in component A-1 is as shown in Table A1 below.

(Synthesis of polymers A-2 to A-4)
The reaction was carried out in the same manner as described for Polymer A-1 above, except that the tetracarboxylic dianhydride and diamine were changed as shown in Table 1 below, and polyimide precursors (Polymers A-2 to A-4) were obtained. I got it.

(Polymer B-1: Synthesis of polybenzoxazole precursor)
Into a 0.5 liter flask equipped with a stirrer and a thermometer, 15.48 g of 4,4'-diphenyl ether dicarboxylic acid and N-methylpyrrolidone were charged as a dicarboxylic acid. After cooling the flask to 5° C., thionyl chloride was added dropwise and the reaction was allowed to proceed for 30 minutes to obtain a solution of dicarboxylic acid chloride. Next, N-methylpyrrolidone was charged into a 0.5 liter flask equipped with a stirrer and a thermometer. After stirring and dissolving 18.30 g of bis(3-amino-4-hydroxyphenyl)hexafluoropropane as bis-aminophenol and 2.18 g of m-aminophenol, pyridine was added. Then, while maintaining the temperature at 0 to 5°C, a solution of dicarboxylic acid chloride was added dropwise over 30 minutes, and stirring was continued for 30 minutes. The solution was poured into 3 liters of water, the precipitate was collected, washed three times with pure water, and then dried under reduced pressure to obtain a polymer (polybenzoxazole precursor (polymer B-1)). The mass of the compound used in Polymer B-1 is shown in Table 1 below.

(Synthesis of polymers B-2 to B-3)
The reaction was carried out in the same manner as described for Polymer B-1 above, except that the dicarboxylic acid and bisaminophenol were changed as shown in Table 1 below, and polybenzoxazole precursors (Polymer B-2 to B- 3) was obtained.

(Polymer C-1: Synthesis of phenolic resin)
A phenolic resin containing 85 g of C1 resin shown below and 15 g of C2 resin shown below was prepared as polymer C-1.
C1: Cresol novolac resin (cresol/formaldehyde novolac resin, m-cresol/p-cresol (mole ratio) = 60/40, polystyrene equivalent weight average molecular weight = 12,000, manufactured by Asahi Yokuzai Kogyo Co., Ltd., product name "EP4020G" )

C2: C2 was synthesized as follows.
<C2: Synthesis of phenolic resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms>
100 parts by mass of phenol, 43 parts by mass of linseed oil and 0.1 part by mass of trifluoromethanesulfonic acid were mixed and stirred at 120°C for 2 hours to obtain a vegetable oil-modified phenol derivative (a). Next, 130 g of vegetable oil-modified phenol derivative (a), 16.3 g of paraformaldehyde, and 1.0 g of oxalic acid were mixed and stirred at 90° C. for 3 hours. Next, the temperature was raised to 120°C and the mixture was stirred under reduced pressure for 3 hours, and then 29 g of succinic anhydride and 0.3 g of triethylamine were added to the reaction mixture, and the mixture was stirred at 100°C under atmospheric pressure for 1 hour. The reaction solution was cooled to room temperature to obtain a reaction product, a phenol resin (hereinafter referred to as "C2 resin") modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms (acid value: 120 mg KOH). /g).

(Synthesis of polymer C-2)
100 g of the following C1 resin was prepared as polymer C-2.

[Examples 1 to 11, Comparative Examples 1 to 2]
A photosensitive resin composition solution was obtained by blending as shown in Table 2 below. Note that the units in Table 2 are parts by mass.

Using the compounds listed in Table 2 and the amounts listed in Tables 3 and 4, photosensitive resin compositions of Examples 1 to 11 and Comparative Examples 1 to 2 were prepared.

The prepared photosensitive resin composition was subjected to (1) an i-ray transmittance measurement test, (2) a sealing material deterioration test, and (3) an adhesion test to a sealing material. The results of each test are shown in Table 3 below.

(1) i-ray transmittance measurement test Using the photosensitive resin compositions prepared in each Example and each Comparative Example, a fan-out type wafer level chip size package type semiconductor device was fabricated. An interlayer insulating film with a thickness of 10 μm was taken out as cleanly as possible from the manufactured semiconductor device. The i-line transmittance of the interlayer insulating film taken out was measured using a UV-1800 device manufactured by Shimadzu Corporation under conditions of a medium scan speed and a sampling pitch of 0.5 nm.

(2) Encapsulant deterioration test R4000 series manufactured by Nagase Chemtex Co., Ltd. was prepared as an epoxy encapsulant. Next, a sealant was spin-coated onto the aluminum sputtered silicone wafer to a thickness of about 150 microns, and the epoxy sealant was cured by heat at 130°C. The photosensitive resin compositions prepared in each Example and each Comparative Example were applied onto the above-mentioned epoxy cured film so that the final film thickness was 10 microns. The applied photosensitive resin composition was 200 mJ/cm ² for Examples 1 to 4, 10 and Comparative Example 1, and 500 mJ/cm 2 for Examples 5 to 7, 11 and Comparative Example 2. ^2. For Examples 8 and 9, the entire surface was exposed under the exposure condition of 700 mJ/cm ² . Thereafter, it was thermally cured at 200°C for 2 hours to form a first layer cured film with a thickness of 10 microns.

The photosensitive resin composition used in forming the first layer cured film is applied onto the first layer cured film, and the entire surface is exposed to light under the same conditions as when forming the first layer cured film, and then thermally cured. A second layer of cured film having a thickness of 10 microns was prepared.

The degree of deterioration was evaluated by checking the presence or absence of voids in the epoxy portion after cutting the cross section of the test piece after the second layer cured film was formed using an FIB device (manufactured by JEOL Ltd., JIB-4000). . A case in which no void was observed was marked as ○, and a case in which even one void was observed was marked as ×.

(3) Adhesion test with encapsulant A pin was placed on the sample prepared in the encapsulant deterioration test, and an adhesion test was conducted using a take-back tester (Sebastian 5 model, manufactured by Quad Group). That is, the adhesion between the epoxy encapsulant and the cured relief patterns prepared from the photosensitive resin compositions prepared in each Example and each Comparative Example was tested.
Evaluation: Adhesive strength 70MPa or more...Adhesion strength◎
50MPa or more - less than 70MPa...Adhesion strength○
30MPa or more - less than 50MPa...adhesion force △
Less than 30MPa...Adhesion force×

Using the photosensitive resin compositions described in Examples 1 to 11, fan-out type wafer level chip size package type semiconductor devices containing an epoxy resin in the molding resin were manufactured and operated without problems.

The present invention is preferably applied to a semiconductor device having a semiconductor chip and a rewiring layer connected to the semiconductor chip, and particularly to a fan-out type wafer level chip size package type semiconductor device.

1 Semiconductor device 2 Semiconductor chip 3 Encapsulant 4 Rewiring layer 5 Wiring 6 Interlayer insulating film 7 External connection terminal 10 Wafer 11 Support 12 Mold resin 13 Photosensitive resin composition

Claims (35)

semiconductor chip,
a sealing material in contact with the semiconductor chip;
a rewiring layer having a larger area than the semiconductor chip in plan view,
The sealing material has a portion that is in direct contact with an interlayer insulating film of the rewiring layer,
The sealing material includes a hardened epoxy resin,
A semiconductor device characterized in that the i-line transmittance of the interlayer insulating film of the rewiring layer is 80% or less when converted to a thickness of 10 μm. semiconductor chip,
a sealing material in contact with the semiconductor chip;
In a semiconductor device comprising a rewiring layer having a larger area than the semiconductor chip in plan view, an interlayer insulating film for use in forming the rewiring layer,
in direct contact with the sealing material containing a cured epoxy resin,
An interlayer insulating film having an i-line transmittance of 80% or less when converted to a thickness of 10 μm. The semiconductor device or interlayer insulation according to claim 1 or 2, wherein the interlayer insulation film contains at least one selected from polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. film. 4. The semiconductor device or interlayer insulating film according to claim 3, wherein the interlayer insulating film includes polyimide having a structure represented by the following general formula (1).

(In general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more.) X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring,
5. The semiconductor device or interlayer insulating film according to claim 4, wherein ^Y1 in the general formula (1) is a divalent organic group containing an aromatic ring. The semiconductor according to claim 4 or 5, wherein X ¹ in the general formula (1) includes at least one structure represented by the following general formulas (2) to (4). device or interlayer insulation film.

(In general formula (4), R ₉ is an oxygen atom, a sulfur atom, or a divalent organic group.) 7. The semiconductor device or interlayer insulating film according to claim 6, wherein ^X1 in the general formula (1) includes a structure represented by the following general formula (5).

Any one of claims 4 to 7, wherein Y ¹ in the general formula (1) includes at least one structure represented by the following general formulas (6) to (8). The semiconductor device or interlayer insulating film described above.

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different.)

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be different or the same.)

(R ₂₂ is a divalent organic group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different. ) 9. The semiconductor device or interlayer insulating film according to claim 8, wherein ^Y1 in the general formula (1) includes a structure represented by the following general formula (9).

4. The semiconductor device or interlayer insulating film according to claim 3, wherein the polybenzoxazole includes a polybenzoxazole having a structure represented by the following general formula (10).

(In general formula (10), U and V are divalent organic groups.) 11. The semiconductor device or interlayer insulating film according to claim 10, wherein U in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms. 12. The semiconductor device according to claim 11, wherein U in the general formula (10) is a chain alkylene group having 1 to 8 carbon atoms and in which some or all of the hydrogen atoms are substituted with fluorine atoms. , or interlayer insulating film. 13. The semiconductor device or interlayer insulating film according to claim 10, wherein V in the general formula (10) is a divalent organic group containing an aromatic group. 14. The semiconductor device or interlayer insulating film according to claim 13, wherein V in the general formula (10) includes at least one structure represented by the following general formulas (6) to (8).

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different.)

(R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, or a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same.)

(R ₂₂ is a divalent organic group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different. good.) 15. The semiconductor device or interlayer insulating film according to claim 14, wherein V in the general formula (10) includes a structure represented by the following general formula (9).

13. The semiconductor device or interlayer insulating film according to claim 10, wherein V in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms. 17. The semiconductor device or interlayer insulating film according to claim 16, wherein V in the general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms. 4. The semiconductor device or interlayer insulating film according to claim 3, wherein the polymer having a phenolic hydroxyl group includes a novolac type phenolic resin. 4. The semiconductor device or interlayer insulating film according to claim 3, wherein the polymer having a phenolic hydroxyl group includes a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group. . When the rewiring layer is viewed in cross section, the rewiring layer includes a first interlayer insulating film layer, a second interlayer insulating film layer, the first interlayer insulating film layer, and the second interlayer insulating film layer. 20. Any one of claims 1 to 19, comprising an intermediate layer that is different from a film layer and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer. The semiconductor device or interlayer insulating film according to claim 1. The first interlayer insulating film layer is in contact with the sealing material, and the i-line transmittance of the first interlayer insulating film layer is 80% or less when converted to a thickness of 10 μm. 21. The semiconductor device or interlayer insulating film according to 20. 22. The semiconductor device or interlayer insulating film according to claim 20 or 21, wherein the second interlayer insulating film layer has a composition different from that of the first interlayer insulating film layer. 23. The semiconductor device according to claim 20, wherein the i-line transmittance of the second interlayer insulating film layer is different from the i-line transmittance of the first interlayer insulating film layer. , or interlayer insulating film. 24. The semiconductor device or interlayer insulating film according to claim 1, wherein the semiconductor device is a fan-out type wafer level chip size package type semiconductor device. 25. The semiconductor device or interlayer insulating film according to claim 1, wherein the i-line transmittance of the interlayer insulating film of the rewiring layer is 70% or less when converted to a thickness of 10 μm. 26. The semiconductor device or interlayer insulating film according to claim 25, wherein the i-line transmittance of the interlayer insulating film of the rewiring layer is 60% or less when converted to a thickness of 10 μm. 26. The semiconductor device or interlayer insulating film according to claim 25, wherein the i-line transmittance of the interlayer insulating film of the rewiring layer is 50% or less when converted to a thickness of 10 μm. 26. The semiconductor device or interlayer insulating film according to claim 25, wherein the i-line transmittance of the interlayer insulating film of the rewiring layer is 40% or less when converted to a thickness of 10 μm. 26. The semiconductor device or interlayer insulating film according to claim 25, wherein the i-line transmittance of the interlayer insulating film of the rewiring layer is 30% or less when converted to a thickness of 10 μm. 30. The semiconductor device or interlayer insulating film according to claim 1, wherein the i-line transmittance of the interlayer insulating film of the rewiring layer is 5% or more when converted to a thickness of 10 μm. 31. The semiconductor device or interlayer insulating film according to claim 30, wherein the i-line transmittance of the interlayer insulating film of the rewiring layer is 10% or more when converted to a thickness of 10 μm. 31. The semiconductor device or interlayer insulating film according to claim 30, wherein the i-line transmittance of the interlayer insulating film of the rewiring layer is 20% or more when converted to a thickness of 10 μm. a step of forming a semiconductor chip in contact with a sealing material;
forming a rewiring layer having a larger area than the semiconductor chip in plan view and including an interlayer insulating film; at this time, a step of bringing the sealing material into direct contact with the interlayer insulating film of the rewiring layer; including,
The sealing material includes a cured epoxy resin,
A method for manufacturing a semiconductor device, wherein the i-line transmittance of the interlayer insulating film is 80% or less when converted to a thickness of 10 μm. 33. The method further comprises a step of forming the interlayer insulating film using a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. A method for manufacturing a semiconductor device according to . In the interlayer insulating film forming step, the interlayer insulating film is formed using the photosensitive resin composition adjusted with an additive so that the i-line transmittance of the interlayer insulating film is 80% or less when converted to a thickness of 10 μm. 35. The method of manufacturing a semiconductor device according to claim 34, further comprising the steps of:

Images