TWI832754B - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

An object of the present invention is to provide a semiconductor device that can improve the chemical resistance of an insulating layer and ensure the adhesion between the insulating layer and wiring after thermal history. The present invention includes a semiconductor wafer 2, a sealing structure that covers the semiconductor wafer 2 and exposes at least part of it, and a rewiring layer 4 that is disposed on the surface side of the semiconductor wafer 2 that is not covered by the sealing structure and has an area larger than that of the semiconductor wafer 2 in plan view. The rewiring layer 4 includes a single layer or multiple layers of insulating layers 6. The cross-sectional view of the insulating layer 6 of the rewiring layer 4 has a step difference of 0.1 μm to 1.8 μm.

Description

Semiconductor device and manufacturing method thereof

The present invention relates to a semiconductor device and a manufacturing method thereof.

There are various methods of semiconductor packaging in semiconductor devices. As a semiconductor packaging method, for example, there is a packaging method in which a semiconductor wafer is covered with a sealing structure, and a rewiring layer electrically connected to the semiconductor wafer is formed. Among semiconductor packaging methods, fan-out, a semiconductor packaging method, has become mainstream in recent years.

In the fan-out semiconductor package, a chip sealing body larger than the chip size of the semiconductor chip is formed by covering the semiconductor wafer on which the protective layer is formed with a sealing structure. Furthermore, a rewiring layer extending to the area of the semiconductor chip and the sealing structure is formed. The rewiring layer is formed with a thin film thickness. In addition, since the rewiring layer can be formed into the area of the sealing structure, the number of external connection terminals can be increased.

For example, the following Patent Document 1 is known as a fan-out semiconductor device. [Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Laid-Open No. 2011-129767

[Problem to be solved by the invention]

The rewiring layer in the fan-out semiconductor device is composed of an insulating layer. In this case, most of the wiring electrically connected to the semiconductor chip will be covered by the insulating layer. Therefore, the insulating layer in the rewiring layer needs to be resistant to the chemicals used in forming the wiring.

In addition, the present inventors focused on the viewpoint that it is required to ensure high adhesion between the insulating layer and the wiring even if the insulating layer is heated during a series of processes for forming the insulating layer. However, in previous semiconductor devices (fan-out semiconductor devices), the adhesion between the semiconductor chip side and the insulating layer side in the rewiring layer is not sufficient after the thermal history generated in a series of processes for forming the insulating layer.

The present invention is made in view of this point, and aims to provide a semiconductor device and a manufacturing method thereof that can simultaneously improve the chemical resistance of the insulating layer and ensure the adhesion between the insulating layer and wiring after thermal history. [Technical means to solve problems]

The inventor found that the above problems can be solved through the following technical methods. [1] A semiconductor device comprising: a semiconductor wafer; a sealing structure covering the semiconductor wafer so that at least part of it is exposed; and a rewiring layer disposed on a surface side of the semiconductor wafer not covered by the sealing structure, and The area in plan view is larger than the above-mentioned semiconductor chip; the above-mentioned rewiring layer includes an insulating layer with a single-layer structure or a multiple-layer structure. When the above-mentioned rewiring layer is viewed in cross-section, the layer structure contained in the above-mentioned insulating layer includes 0.1 μm ~ 1.8 The step difference in μm. [2] The semiconductor device according to item 1, wherein the step difference is a difference between the largest convex portion and the largest concave portion in the layer structure. [3] The semiconductor device according to item 1 or 2, wherein the rewiring layer has a layer structure of three or more layers. [4] The semiconductor device according to any one of items 1 to 3, wherein the semiconductor wafer includes a plurality of wafers in parallel. [5] The semiconductor device according to any one of items 1 to 4, wherein the rewiring layer has an intermediate layer electrically connected to the semiconductor chip, and the insulating layer covering the intermediate layer. [6] The semiconductor device according to any one of items 1 to 5, wherein the sealing structure is in contact with the insulating layer. [7] The semiconductor device according to any one of items 1 to 6, wherein the sealing structure contains epoxy resin. [8] The semiconductor device according to any one of items 1 to 7, wherein the step difference is 0.4 μm to 1.8 μm. [9] The semiconductor device according to any one of items 1 to 8, wherein the insulating layer contains a material selected from the group consisting of carbon (C), hydrogen (H), nitrogen (N), oxygen (O), and silicon (Si). It is composed of at least one kind of titanium (Ti). [10] The semiconductor device according to any one of items 1 to 9, wherein the insulating layer does not contain halogen. [11] The semiconductor device according to any one of items 1 to 10, wherein the insulating layer contains at least one selected from the group consisting of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group. [12] The semiconductor device according to any one of items 1 to 11, wherein the insulating layer contains polyimide, when IR (Infrared, infrared) spectrum is measured using the total reflection measurement method (ATR method) 1380 cm The peak ratio between the peak height near ^-1 and the peak height near 1500 cm ^-1 (peak height near 1380 cm ^-1 /peak height near 1500 cm ^-1 ) is 0.2 to 1.0. [13] The semiconductor device according to any one of items 1 to 12, wherein the semiconductor device further includes a protective layer that protects the semiconductor wafer, and the protective layer is disposed between the semiconductor wafer and the insulating layer. [14] The semiconductor device according to item 13, wherein the protective layer is in contact with at least one of the semiconductor chip and the insulating layer. [15] The semiconductor device according to item 13 or 14, wherein a hole is formed in the protective layer, and the semiconductor chip is electrically connected to an intermediate layer electrically connected to the semiconductor chip through the hole. [16] The semiconductor device according to item 15, wherein the ratio of the opening area originating from the hole in the surface of the protective layer on the side of the semiconductor chip is less than half. [17] The semiconductor device according to any one of items 13 to 16, wherein the protective layer contains at least one selected from the group consisting of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group. [18] The semiconductor device according to any one of items 13 to 17, wherein the protective layer contains polyimide, and when the IR spectrum is measured using the total reflection measurement method (ATR method), the peak near 1380 cm ^-1 The peak ratio between the peak height and the peak height near 1500 cm ^-1 (peak height near 1380 cm ^-1 /peak height near 1500 cm ^-1 ) is 1.2 to 2.5. [19] The semiconductor device according to any one of items 1 to 18, wherein at least one of the protective layer and the insulating layer contains polyimide having a structure of the following general formula (1), [Chemical 1] (In the general formula (1), X ¹ is a tetravalent organic group derived from tetracarboxylic dianhydride, Y ¹ is a divalent organic group derived from diamine, and m is an integer of 1 or more). [20] The semiconductor device according to item 19, wherein X ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the general formula (1) is a tetravalent organic group containing an aromatic ring Bivalent organic radical. [21] The semiconductor device according to item 19 or 20, wherein X ¹ in the general formula (1) includes at least one structure represented by the following general formulas (2) to (4), ] [Chemical 3] [Chemical 4] (In the general formula (4), R ₉ is an oxygen atom, a sulfur atom or a divalent organic group). [22] The semiconductor device according to item 21, wherein X ¹ in the general formula (1) includes a structure represented by the following general formula (5), [Chemical Formula 5] . [23] The semiconductor device according to any one of items 19 to 22, wherein Y ¹ in the above general formula (1) contains at least one structure represented by the following general formula (6) to general formula (8) , [Chemistry 6] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different) [Chemical 7] (R ₁₄ to R ₂₁ are each independently a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be different from each other or the same) [Chemical 8] (R ₂₂ is a divalent group or an oxygen atom, and R ₂₃ to R ₃₀ are each independently a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different). [24] The semiconductor device according to item 19, wherein Y ¹ in the above general formula (1) contains a structure represented by the following general formula (9), [Chemical 9] . [25] The semiconductor device according to item 11, wherein the insulating layer contains the polybenzoconazole having a structure of the following general formula (10), [Chemical 10] (In the general formula (10), U and V are divalent organic groups). [26] The semiconductor device according to item 25, wherein U in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms. [27] The semiconductor device according to item 26, wherein U in the general formula (10) is a chain alkylene group having 1 to 8 carbon atoms and in which part or all of the hydrogen atoms are substituted by fluorine atoms. [28] The semiconductor device according to any one of items 25 to 27, wherein V in the general formula (10) is a divalent organic group containing an aromatic group. [29] The semiconductor device according to item 28, wherein V in the general formula (10) includes at least one structure represented by the following general formulas (6) to (8), [Chemical 11] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are each independently a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different) [Chemical 12] (R ₁₄ to R ₂₁ are each independently a hydrogen atom, a halogen atom, and a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same) [Chemical 13] (R ₂₂ is a divalent group or an oxygen atom, and R ₂₃ to R ₃₀ are each independently a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different). [30] The semiconductor device according to item 29, wherein V in the general formula (10) includes a structure represented by the following general formula (9), [Chemical 14] . [31] The semiconductor device according to any one of items 25 to 29, wherein V in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms. [32] The semiconductor device according to item 31, wherein V in the general formula (10) is a bivalent chain aliphatic group having 1 to 20 carbon atoms. [33] The semiconductor device according to item 11, wherein the polymer having a phenolic hydroxyl group contains a novolac-type phenol resin. [34] The semiconductor device according to item 11, wherein the polymer having a phenolic hydroxyl group includes a phenol resin that does not have an unsaturated hydrocarbon group and a modified phenol resin that has an unsaturated hydrocarbon group. [35] The semiconductor device according to any one of items 1 to 34, wherein the insulating layer includes a first insulating layer and a second insulating layer having a composition different from that of the first insulating layer. [36] The semiconductor device according to any one of items 1 to 35, wherein the semiconductor device is a fan-out wafer level chip size package type semiconductor device. [37] A method of manufacturing a semiconductor device, which includes: a first step of preparing a semiconductor wafer; a second step of covering the prepared semiconductor wafer with a sealing structure and exposing at least part of the semiconductor wafer; and a third step. A step of forming a rewiring layer on the exposed surface side of the above-mentioned semiconductor wafer. The rewiring layer has an area larger than the above-mentioned semiconductor wafer in a plan view and includes an insulating layer with a single-layer structure or a multiple-layer structure; in the above-mentioned third step , the insulating layer is produced in which the step difference of the layer structure included in the insulating layer is 0.1 μm to 1.8 μm when viewed in cross section of the rewiring layer. [38] The manufacturing method of a semiconductor device as described in item 37, which includes an insulating layer forming step, which step is composed of at least one of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group. The photosensitive resin composition of the compound forms the above-mentioned insulating layer. [39] The manufacturing method of a semiconductor device as described in Item 37 or 38, wherein the second step includes: the step of forming a protective layer on the semiconductor wafer; and covering the semiconductor wafer with the protective layer formed on the semiconductor wafer with a sealing structure and making the The step of exposing at least part of the protective layer; the above-mentioned third step includes the step of forming the above-mentioned rewiring layer on the side of the above-mentioned protective layer. [40] The manufacturing method of a semiconductor device as described in item 39, which includes a step of forming a protective layer by at least one of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group. The photosensitive resin composition of the compound forms the above-mentioned protective layer. [Effects of the invention]

According to the present invention, it is possible to provide a semiconductor device that can simultaneously improve the chemical resistance of the insulating layer and ensure the adhesion between the insulating layer and wiring after thermal history, and a manufacturing method thereof.

Hereinafter, one embodiment of the semiconductor device of the present invention (hereinafter referred to as "embodiment") will be described with reference to the drawings. In addition, this invention is not limited to the following embodiment, It can be implemented with various changes within the scope of the summary. In this embodiment, the numerical range described using "～" includes the numerical values written before and after "～" within the range. Furthermore, in this embodiment, among the numerical ranges described in stages, the upper limit or lower limit described in a certain numerical range may be replaced with the upper limit or lower limit of another numerical range described in stages. value. Furthermore, in this embodiment, the upper limit value or the lower limit value described in a certain numerical range may be replaced with the value shown in the Example. In the content shown in the drawings, the scale, shape, length, etc. are sometimes exaggerated to achieve greater clarity.

[Embodiment 1] ＜Semiconductor Device＞ FIG. 1 is a schematic cross-sectional view of the semiconductor device according to this embodiment. As shown in FIG. 1 , a semiconductor device (semiconductor integrated circuit (IC)) 1 includes: Semiconductor wafer 2; a sealing structure that covers the semiconductor wafer 2 so that at least part of it is exposed; and The rewiring layer 4 is arranged on the surface side of the semiconductor chip 2 that is not covered by the sealing structure, and has an area larger than the semiconductor chip 2 when viewed from above; The rewiring layer 4 includes an insulating layer (sometimes referred to as an "interlayer insulating film") 6 having a single-layer structure or a multiple-layer structure, In the cross-sectional observation of the rewiring layer 6 , the step difference of the layer structure included in the insulating layer 6 is 0.1 μm to 1.8 μm. Furthermore, in FIG. 1 , as indicated by dotted lines, the insulating layer 6 has a three-layer structure.

In one form, the sealing structure may include sealing material 3 . As shown in FIG. 1 , the sealing material 3 covers the surface (side and upper surface) of the semiconductor wafer 2 and is formed in an area larger than the area of the semiconductor wafer 2 in a plan view (arrow A direction in FIG. 1 ).

The rewiring layer 4 is composed of a plurality of wirings 5 electrically connected to a plurality of terminals 2 a provided on the semiconductor chip 2 , and an insulating layer 6 embedded between the wirings 5 . A plurality of terminals 2 a provided on the semiconductor chip 2 are electrically connected to the wiring 5 in the rewiring layer 4 . One end of the wiring 5 is connected to the terminal 2a, and the other end is connected to the external connection terminal 7. The wiring 5 between the terminal 2a and the external connection terminal 7 is covered with the insulating layer 6. The semiconductor wafer 2 may also be composed of a plurality of wafers arranged in parallel. FIG. 1 shows a form in which a plurality of semiconductor wafers 2 are arranged along the plane direction (the direction perpendicular to the direction A). When a plurality of semiconductor chips 2 are arranged, the compositions of each semiconductor chip 2 may be the same or different.

As shown in FIG. 1 , the rewiring layer 4 is formed larger than the semiconductor wafer 2 in a plan view (arrow A direction). The semiconductor device 1 shown in FIG. 1 is a fan-out wafer level chip scale package (WLCSP) type semiconductor device. In the fan-out semiconductor device, the insulating layer 6 in the rewiring layer 4 is not only in close contact with the semiconductor chip 2 but also in close contact with the sealing material 3 . The semiconductor wafer 2 contains a semiconductor such as silicon, and has a circuit formed inside it.

(Rewiring layer) The rewiring layer 4 includes the wiring 5 and the insulating layer 6 covering the periphery of the wiring 5 . The redistribution layer may contain more than 3 layers of insulating layers. By rewiring the wiring layer to include three or more insulating layers, the step difference can be easily adjusted. The number of insulation layers in the rewiring layer may be 9 or less.

Here, the "rewiring layer" in this embodiment is a thin film layer having the insulating layer 6 as described above, and may include the wiring 5 . The "rewiring layer" in this embodiment does not include a printed wiring board.

In this embodiment, the film thickness of the rewiring layer 4 can be about 3 to 30 μm. The film thickness of the rewiring layer 4 may be 1 μm or more, 5 μm or more, or 10 μm or more. In addition, the film thickness of the rewiring layer 4 may be 40 μm or less, 30 μm or less, or 20 μm or less.

When the semiconductor device 1 is viewed from above (direction of arrow A), the following figure is shown in FIG. 2 . FIG. 2 is a schematic plan view of the semiconductor device according to this embodiment. In addition, the illustration of the sealing material 3 is omitted.

The semiconductor device 1 shown in FIG. 2 (see FIG. 1 ) is configured such that the area S1 of the rewiring layer 4 is larger than the area S2 of the semiconductor wafer 2 . From the viewpoint of increasing the number of external connection terminals, the area S1 of the rewiring layer 4 is preferably at least 1.05 times the area S2 of the semiconductor chip 2 , preferably at least 1.1 times, more preferably at least 1.2 times, and particularly preferably at least 1.2 times. is more than 1.3 times. Regarding the upper limit, the area S1 of the rewiring layer 4 may be 50 times or less the area S2 of the semiconductor chip 2, or may be 25 times or less, or 10 times or less, or 5 times or less. Furthermore, in FIG. 2 , the area of the portion of the rewiring layer 4 covered by the semiconductor chip 2 is also included in the area S1 of the rewiring layer 4 .

In addition, the outer shapes of the semiconductor chip 2 and the rewiring layer 4 may be the same or different. In FIG. 2 , the semiconductor chip 2 and the rewiring layer 4 have a similar shape to a rectangle, but the shape may also be a shape other than a rectangle.

(insulation layer) From the viewpoint of preventing unexpected conduction with the wiring 5 , the insulating layer 6 is preferably a member with high insulation properties. FIG. 3 is a diagram for explaining a form of the insulating layer in this embodiment, and is a diagram schematically showing a cross section thereof. The rewiring layers 4a to 4c in FIG. 3 correspond to the respective portions a to c indicated by arrows in FIG. 1, and for convenience of explanation, the respective portions in FIG. 1 are shown upside down.

In each figure, each layer of the insulating layer 6 constituting the rewiring layer 4 has unevenness on the surface opposite to the sealing structure. In each layer, the convex portion with the largest thickness is called the "maximum convex portion", and the concave portion with the deepest depression along the thickness direction from the largest convex portion is called the "maximum concave portion." The step difference can be found from the difference between the "maximum convex part" and the "maximum concave part". The specific process for calculating the "step difference" will be explained through the following examples.

Here, regarding the calculation of the step difference, the following matters are considered. (1) The "maximum convex part", "maximum recessed part", and "step difference" are not calculated individually by targeting specific locations in the rewiring layer (for example, a to c indicated by arrows in Figure 1). Instead, the entire rewiring layer including a to c indicated by arrows in Figure 1 is calculated. That is, the "step difference" is calculated based on the "maximum convex part" and the "maximum concave part" obtained when observing the whole from one end of the rewiring layer to the other end. (2) The grooves formed by the relief pattern do not constitute the largest concave portion, and the surface of the wiring does not constitute the largest convex portion. (3) When the insulating layer has a plurality of layers, calculate the step difference for each layer. In this case, at least one of the step differences calculated for each layer is 0.1 μm to 1.8 μm.

Hereinafter, the calculation method of the step difference will be explained in detail. Figures 3 (a) to (c) respectively correspond to the portions indicated by arrows a to c in Figure 1 . Figure 3(a) shows a structure in which a first insulating layer 61a, a second insulating layer 62a and a third insulating layer 63a are sequentially stacked on a sealing structure (sealing material 3); Figure 3(b) shows a structure in which a first insulating layer 61b, a wiring 52b, and a third insulating layer 63b are sequentially laminated on a sealing structure (sealing material 3); FIG. 3(c) shows that the first insulating layer 61c and the wiring 51c, the second insulating layer 62c and the wiring 52c, and the third insulating layer are sequentially stacked on the sealing structure (sealing material 3), the protective layer 8 and the terminal 2a. 63c structure.

In FIG. 3(b), the wiring 52b is arranged between the relief patterns formed by the second insulating layer (not shown). In FIG. 3(c), the wiring 51c is arranged between the relief patterns formed by the first insulating layer 61c, and is connected to the terminal 2a. In addition, the wiring 52c is arranged between the relief patterns formed by the second insulating layer 62c and is connected to the wiring 51c. Furthermore, the third insulating layer 63c is formed to cover the second insulating layer 62c and the wiring 52c, and the external connection terminal 7 is arranged on the third insulating layer 63c.

First, focus on layer 1. Observe the entire 1st floor (consideration (1) above). In the first layer, observe the largest convex portion C1 giving the largest thickness in the rewiring layer 4a respectively; In the rewiring layer 4c, the largest concave portion D1 giving the deepest depression is observed from the largest convex portion C1. Furthermore, the step difference G1 in the first layer is calculated as the difference between the maximum convex portion C1 and the maximum concave portion D1. Furthermore, if only the depth from the largest convex portion C1 is observed, the bottom Bt of the convex pattern formed by the first insulating layer 61 c is the deepest, but the groove formed by the convex pattern does not constitute the largest concave portion (the above considerations (2) )).

Second, focus on layer 2. Observe the entire 2nd floor (consideration (1) above). In the second layer, observe the largest convex portion C2 on the rewiring layer 4c; The largest recessed portion D2 is observed in the rewiring layer 4a. Furthermore, the step difference G2 in the second layer is calculated as the difference between the maximum convex portion C2 and the maximum concave portion D2. Furthermore, protrusions exceeding the height of the maximum protrusion C2 are found in the rewiring layers 4b and 4c respectively. However, since they are protrusions appearing on the surfaces of the wirings 52b and 52c, they do not constitute the maximum protrusion (the above considerations). (2)).

Second, focus on layer 3. Observe the entire 3rd floor (consideration (1) above). In the third layer, the largest convex portion C3 and the largest recessed portion D2 are both observed in the rewiring layer 4b. Furthermore, the step difference G3 in the third layer is calculated as the difference between the maximum convex portion C3 and the maximum concave portion D3.

Furthermore, although not shown in the figure, when the rewiring layer has an N-layer structure, a total of N step differences are calculated for each of the first to Nth layers.

At least one of the step differences G1 to G3 calculated in the above manner for each layer is 0.1 μm to 1.8 μm (the above consideration (3)). In this embodiment, the reason why the chemical resistance of the insulating layer can be improved and the adhesion between the insulating layer and the wiring after thermal history can be ensured by setting the step difference to 0.1 μm to 1.8 μm is not clear. The inventor considers the following. It is considered that the step difference in the insulating layer originates from, for example, the unevenness of the surface of the molding resin (sealing material) and the step difference generated after the formation of the first insulating layer. By setting the step difference to 0.1 μm or more, the insulating layer shrinks sufficiently, thereby improving the strength and toughness of the film, resulting in improved chemical resistance. From the viewpoint of chemical resistance and crack resistance of the insulating layer, the step difference is preferably 0.2 μm or more, more preferably 0.4 μm or more, and particularly preferably 0.5 μm or more.

In addition, in the manufacturing process of semiconductor devices, wiring is formed on the top of the insulating layer by sputtering or plating. It is considered that by setting the step difference to 1.8 μm or less, the stress concentration points are dispersed to promote relaxation of stress generated between the insulating layer and the wiring, thereby improving the adhesion. From the viewpoint of the productivity of semiconductor devices, the step difference is preferably 1.7 μm or less, more preferably 1.6 μm or less, and particularly preferably 1.5 μm or less.

From the viewpoint of developability, the Young's modulus of the insulating layer 6 is preferably 5.0 GPa or less, more preferably 4.5 GPa or less, particularly preferably 4.1 GPa or less or 4.0 GPa or less. Moreover, from the viewpoint of protecting the wiring, it is preferably 2.0 GPa or more, more preferably 2.5 GPa or more, and particularly preferably 3.0 GPa or more or 3.2 GPa or more.

The insulating layer 6 in the rewiring layer 4 can be multiple layers. That is, when the rewiring layer 4 is viewed in cross section, the rewiring layer 4 may include a first insulating layer, a second insulating layer, and an insulating layer that is different from the first insulating layer and the second insulating layer and is provided between the first insulating layer and the second insulating layer. The middle layer between 2 insulation layers. The intermediate layer is the wiring 5, for example. The wiring 5 only needs to be a member with high conductivity, and copper is generally used.

The first insulating layer and the second insulating layer may have the same composition or may have different compositions. The first insulating layer and the second insulating layer may have the same Young's modulus, or may have different Young's modulus. The first insulating layer and the second insulating layer may have the same film thickness, or may have different film thicknesses. If the first insulating layer and the second insulating layer have different compositions, different Young's modulus, and/or different film thicknesses, each insulating layer may have different properties, so it is preferable.

(Composition of insulation layer) For example, the insulating layer 6 is preferably a film containing at least one compound selected from the group consisting of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group.

(Resin composition forming insulating layer) The resin composition used for the formation of the insulating layer 6 can be a photosensitive resin composition. Among them, it is preferably a resin composition selected from the group consisting of polyimide precursors, polybenzoethazole precursors, and polymers having phenolic hydroxyl groups. A photosensitive resin composition containing at least one compound. The resin composition used to form the insulating layer 6 may be in a liquid form or in a film form. In addition, the resin composition used for forming the insulating layer 6 may be a negative photosensitive resin composition or a positive photosensitive resin composition.

In this embodiment, the pattern obtained by exposing and developing the photosensitive resin composition is called a relief pattern, and the pattern obtained by heating and hardening the relief pattern is called a cured relief pattern. This hardened relief pattern corresponds to the protective layer 8 and the insulating layer 6 . In this embodiment, the insulating layer is preferably composed of at least one selected from the group consisting of C, H, N, O, Si, and Ti. By not having functional groups with large free volumes such as halogen atoms, it is possible to prevent the chemical resistance from decreasing.

(Sealing material) From the viewpoint of heat resistance and adhesion to the insulating layer, the material of the sealing material 3 is preferably epoxy resin.

As shown in FIG. 1 , the sealing material 3 is preferably in direct contact with the semiconductor wafer 2 and the rewiring layer 4 . Thereby, the sealing property from the surface of the semiconductor chip 2 to the surface of the rewiring layer 4 can be effectively improved.

The sealing material 3 may be a single layer or may have a plurality of layers laminated. When the sealing material 3 has a laminated structure, it may be a laminated structure of the same material or a laminated structure of different materials.

(protective layer)

The protective layer 8 in this embodiment can protect the semiconductor chip 2 . From the viewpoint of protecting the semiconductor chip 2 from physical impact, the Young's modulus of the protective layer 8 is preferably 4.0 GPa or more, more preferably 4.5 GPa or more, and particularly preferably 5 GPa or more. Moreover, from the viewpoint of developability, the Young's modulus of the protective layer 8 is preferably 9.0 GPa or less, more preferably 8.5 GPa or less, and particularly preferably 8.0 GPa or less. The Young's modulus in this embodiment can be calculated through tensile testing and nanoindentation testing.

The protective layer 8 is provided on the surface of the semiconductor wafer 2 that is not covered by the sealing material 3 . When the semiconductor wafer 2 is viewed from the side covered by the sealing material 3 (in the direction of arrow A in FIG. 1 ), the protective layer 8 becomes the back surface of the semiconductor wafer 2 and cannot be observed.

The protective layer 8 is in contact with at least one of the semiconductor chip 2 and the insulating layer 6 . This makes it easy to appropriately protect the semiconductor wafer 2 . In addition, this structure is a form in which it is easy to expect improvement in the adhesion between the protective layer 8 side and the insulating layer 6 side. However, even when the semiconductor device 1 has this form, it is possible to improve the adhesion between the protective layer 8 side and the insulating layer 6 side. The closeness of the side. In particular, in the semiconductor device 1 , the protective layer 8 is in contact with both the semiconductor chip 2 and the insulating layer 6 , which is a better form from the above point of view. Furthermore, although it is omitted in the semiconductor device 1 , other components may be interposed between the semiconductor chip 2 and the insulating layer 6 as long as the effects of the present invention can be obtained.

Holes 8 a are formed in the protective layer 8 . The semiconductor chip 2 side and the wiring 5 side are electrically connected through the hole 8a. This ensures the electrical connection between the semiconductor chip 2 side and the wiring 5 side, and further protects the semiconductor chip 2 easily. A plurality of holes 8 a in the protective layer 8 are provided corresponding to the terminals 2 a of the semiconductor chip 2 . Terminals 2a are respectively inserted into the plurality of holes 8a.

In the semiconductor device 1, the ratio of the opening area originating from the hole 8a in the surface of the semiconductor chip 2 side in the protective layer 8 is less than half. Thereby, the protection area for protecting the semiconductor chip 2 can be ensured, so it is easy to further protect the semiconductor chip 2 . Here, the "opening area" refers to the total area of the opening entrances on the two sides of the semiconductor wafer.

(Composition of protective layer) For example, the protective layer is preferably a film containing at least one compound selected from the group consisting of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group.

(Resin composition forming protective layer) The resin composition used to form the protective layer only needs to be a photosensitive resin composition. Among them, it is preferable to include a polymer selected from the group consisting of polyimide precursors, polybenzoethazole precursors, and phenolic hydroxyl groups. A photosensitive resin composition containing at least one compound among them. The resin composition used to form the protective layer may be in liquid form or film form. In addition, the resin composition used for forming the protective layer may be a negative photosensitive resin composition or a positive photosensitive resin composition.

＜Polyimide precursor composition＞ (A)Photosensitive resin Examples of the photosensitive resin used in the polyamide precursor composition include polyamide, polyamide ester, and the like. For example, as the polyamic acid ester, a polyamic acid ester containing a repeating unit represented by the following general formula (11) can be used.

[Chemical 15] R ¹ and R ² are each independently a hydrogen atom, a saturated aliphatic group with 1 to 30 carbon atoms, an aromatic group, a monovalent organic group with a carbon-carbon unsaturated double bond, or one of the carbon-carbon unsaturated double bonds. Valence ions. X ¹ is a tetravalent organic group derived from tetracarboxylic dianhydride, Y ¹ is a divalent organic group derived from diamine, and m is an integer of 1 or more. m is preferably 2 or more, more preferably 5 or more.

When at least one of R ¹ and R ² in the above general formula (11) exists as a monovalent cation, O corresponding to the cation is negatively charged (exists as -O ^- ). Moreover, X ¹ and Y ¹ may contain a hydroxyl group.

R ¹ and R ² in the general formula (11) more preferably have ammonium at the end of a monovalent organic group represented by the following general formula (12) or a monovalent organic group represented by the following general formula (13) The structure of ions. [Chemical 16] (In the general formula (12), R ₃ , R ₄ and R ₅ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₁ is an integer from 1 to 20) [Chemical 17] (In the general formula (13), R ₆ , R ₇ and R ₈ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₂ is an integer from 1 to 20)

A plurality of polyamide esters represented by the general formula (11) may be mixed. In addition, a polyamide obtained by copolymerizing polyamide esters represented by the general formula (11) can be used.

From the viewpoint of Young's modulus and chemical resistance, X ¹ is preferably a tetravalent organic group including an aromatic group. Specifically, X ¹ is preferably a tetravalent organic group containing at least one structure represented by the following general formulas (2) to (4). [Chemical 18]

[Chemical 19]

[Chemistry 20] (In the general formula (4), R ₉ is any one of an oxygen atom, a sulfur atom, and a divalent organic group).

R ₉ in the general formula (4) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom. R ₉ may contain a hydroxyl group.

From the viewpoint of developability, X ¹ is particularly preferably a tetravalent organic group containing a structure represented by the following general formula (5). [Chemistry 21]

From the viewpoint of Young's modulus and chemical resistance, Y ¹ is preferably a divalent organic group including an aromatic group. Specifically, Y ¹ is preferably a divalent organic group containing at least one structure represented by the following general formulas (6) to (8). [Chemistry 22] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are each independently a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different) [Chemical 23] (R ₁₄ to R ₂₁ are each independently a hydrogen atom, a halogen atom, and a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same) [Chemical 24] (R ₂₂ is a divalent group or an oxygen atom, and R ₂₃ to R ₃₀ are independently a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different)

R ₂₂ in the general formula (8) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

From the viewpoint of developability, Y ¹ is particularly preferably a bivalent organic group containing a structure represented by the following general formula (9). [Chemical 25]

In the above-mentioned polyamide ester, X ¹ in the repeating unit is derived from the tetracarboxylic dianhydride used as the raw material, and Y ¹ is derived from the diamine used as the raw material.

Examples of tetracarboxylic dianhydride used as a raw material include: pyromellitic dianhydride (PMDA), diphenyl ether-3,3',4,4'-tetracarboxylic dianhydride (4,4' -Oxydiphthalic dianhydride: ODPA), benzophenone-3,3',4,4'-tetracarboxylic dianhydride, biphenyl-3,3',4,4'-tetracarboxylic acid Dianhydride, diphenyl-3,3',4,4'-tetracarboxylic dianhydride, diphenylmethane-3,3',4,4'-tetracarboxylic dianhydride, 2,2-bis(3 , 4-phthalic anhydride) propane, 2,2-bis(3,4-phthalic anhydride)-1,1,1,3,3,3-hexafluoropropene, etc. These can be used individually or in mixture of 2 or more types.

Examples of diamines used as raw materials include p-phenylenediamine (PPD), m-phenylenediamine, 4,4'-diaminodiphenyl ether (DADPE), and 3,4'-diaminodiphenyl ether. Phenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diamino-2,2'-dimethylbiphenyl (m-TB) 4,4'-diaminodiphenyl sulfide Ether, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenylsulfide, 3,4'-diaminobis Phenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-Diaminobenzophenone, 3,4'-Diaminobenzophenone, 3,3'-Diaminobenzophenone, 4,4'-Diaminodiphenylmethane , 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-amine 1,3-bis(3-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]benzene, bis[4-(3-aminophenoxy)benzene, Phenoxy)phenyl]terine, 4,4-bis(4-aminophenoxy)biphenyl, 4,4-bis(3-aminophenoxy)biphenyl, bis[4-(4- Aminophenoxy)phenyl] ether, bis[4-(3-aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenyl)benzene, 1,3-bis( 4-Aminophenyl)benzene, 9,10-bis(4-aminophenyl)anthracene, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-aminophenyl)anthracene base) hexafluoropropene, 2,2-bis[4-(4-aminophenoxy)phenyl)propane, 2,2-bis[4-(4-aminophenoxy)phenyl)hexafluoro Propylene, 1,4-bis(3-aminopropyldimethylsilyl)benzene, o-toluidine, 9,9-bis(4-aminophenyl)benzene, etc. In addition, it may also be obtained by substituting part of the hydrogen atoms on the benzene ring. Moreover, these may be used individually or in mixture of 2 or more types.

In the synthesis of the polyamide ester (A), it is usually preferable to directly apply the tetracarboxylic acid diester obtained by the esterification reaction of the following tetracarboxylic dianhydride to the condensation reaction with the diamine. Methods.

The alcohols used in the esterification reaction of the above-mentioned tetracarboxylic dianhydride are alcohols having olefinic double bonds. Specific examples include 2-hydroxyethyl methacrylate, 2-methacryloyloxyethanol, glycerol diacrylate, glycerin dimethacrylate, and the like. These alcohols can be used individually or in mixture of 2 or more types.

Regarding the specific synthesis method of the polyamide ester (A) used in this embodiment, a previously known method can be used. An example of the synthesis method is the method shown in International Publication No. 00/43439. That is, the following method can be exemplified: by once converting the tetracarboxylic acid diester into the tetracarboxylic acid diester dichloride, and applying the tetracarboxylic acid diester dichloride and the diamine in the presence of a basic compound. Condensation reaction is carried out to produce polyamide ester (A). Another example is a method of producing polyamic acid ester (A) by subjecting a tetracarboxylic acid diester and a diamine to a condensation reaction in the presence of an organic dehydrating agent.

Examples of the organic dehydrating agent include dicyclohexylcarbodiimide (DCC), diethylcarbodiimide, diisopropylcarbodiimide, and ethylcyclohexylcarbodiimide. Amine, diphenylcarbodiimide, 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide, 1-cyclohexyl-3-(3-dimethylaminopropyl) ) Carbodiimide hydrochloride, etc.

The weight average molecular weight of the polyamide ester (A) used in this embodiment is preferably 6,000 to 150,000, more preferably 7,000 to 50,000, even more preferably 7,000 to 20,000.

(B1) Photo initiator When the resin composition used for forming the protective layer and the insulating layer is a negative photosensitive resin, a photo initiator is used. As the photoinitiator, for example, benzophenone, o-benzoyl benzoic acid methyl ester, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, and benzyl ketone can be used. Benzophenone derivatives; 2,2'-diethoxyacetophenone, 2-hydroxy-2-methylpropiophenone and other acetophenone derivatives; 1-hydroxycyclohexyl phenyl ketone, 9-oxosulfide 𠮿 , 2-Methyl 9-oxosulfide𠮿 , 2-isopropyl 9-oxosulfide𠮿 , and diethyl 9-oxosulfide𠮿 Etc. 9-oxysulfur𠮿 Derivatives; benzoin derivatives such as benzoyl, benzoyl dimethyl ketal and benzoyl-β-methoxyethyl acetal; benzoin derivatives such as benzoin methyl ether; 2,6- Azides such as bis(4'-diazobenylidene)-4-methylcyclohexanone and 2,6'-bis(4'-diazobenylidene)-cyclohexanone; 1-phenyl-1,2-butanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropane Dione-2-(O-ethoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-benzoyl)oxime, 1,3-diphenylglycerol-2-(O -Oximes such as -ethoxycarbonyl) oxime, 1-phenyl-3-ethoxyglycerol-2-(O-benzoyl)oxime; N-arylglycines such as N-phenylglycine Amino acids; peroxides such as benzoyl peroxide; aromatic biimidazole and titanocenes, etc. Among these, from the viewpoint of light sensitivity, the above-mentioned oximes are preferred.

The usage amount of these photoinitiators is preferably 1 to 40 parts by mass, more preferably 2 to 20 parts by mass relative to 100 parts by mass of polyamide ester (A). By adding 1 part by mass or more of the photoinitiator with respect to 100 parts by mass of the polyamide ester (A), the photosensitivity tends to be excellent. In addition, by adding 40 parts by mass or less, thick film curability tends to be excellent.

(B2) Photoacid generator When the resin composition used for forming the protective layer and the insulating layer is a positive photosensitive resin, a photoacid generator is used. By containing a photoacid generator, an acid is generated in the ultraviolet-exposed part. In this case, the solubility of the exposed part in an alkaline aqueous solution increases. Thereby, it can be used as a positive photosensitive resin composition.

Examples of the photoacid generator include quinonediazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and phosphonium salts. Among them, a quinonediazide compound is preferably used from the viewpoint of obtaining a highly sensitive positive-type photosensitive resin composition by exhibiting an excellent dissolution-inhibiting effect. Moreover, two or more types of photoacid generators may be contained.

(C)Additives The step difference in cross-sectional observation of the insulating layer can be adjusted according to the polymer structure, and can also be adjusted by the type or amount of additives. For example, by adjusting the easily volatile parts and cross-linked parts of the polymer structure, the hardening shrinkage can be adjusted to the required level. Furthermore, for example, by selecting a compound with a high hardening shrinkage as an additive, there is a tendency to increase the level difference. In addition, by selecting a compound with a low hardening shrinkage, the step difference tends to be reduced. Examples of compounds that increase the step difference include additives with a small methylacrylyl equivalent. Examples of compounds that reduce the step difference include epoxy compounds and oxetane compounds. As for the amount of additives, it only needs to be adjusted appropriately according to the step difference of the target cross-section observation.

(D)Solvent Use solvents that can dissolve or disperse the ingredients. Examples thereof include N-methyl-2-pyrrolidone, γ-butyrolactone, acetone, methyl ethyl ketone, dimethyl styrene, and the like. These solvents can be used in the range of 30 to 1500 parts by mass based on 100 parts by mass of (A) photosensitive resin, depending on the thickness and viscosity of the coating film.

(E)Others The polyimide precursor composition may contain a cross-linking agent. As the cross-linking agent, the photosensitive resin (A) can be cross-linked when the polyimide precursor composition is exposed and developed and then heated and cured, or the cross-linking agent itself can form a cross-linking network. agent. By using a cross-linking agent, the heat resistance and chemical resistance of the cured film (insulating layer) can be further enhanced.

In addition, it may also contain a sensitizer for improving the photosensitivity, an adhesive agent for improving the adhesion with the base material, etc.

(Develop) After exposing the polyimide precursor composition, the unnecessary parts are rinsed with a developer. In the case of a polyimide precursor composition that is developed using a solvent, the developer used may be N,N-dimethylformamide, dimethylsulfoxide, or N,N-dimethylethane. Good solvents such as amide, N-methyl-2-pyrrolidone, cyclopentanone, γ-butyrolactone, acetates, etc., mixed solvents of these good solvents and poor solvents such as lower alcohols, water, aromatic hydrocarbons, etc. wait. After development, use a poor solvent, etc. to clean the film if necessary.

In the case of a polyimide precursor composition developed using an alkaline aqueous solution, an aqueous solution of tetramethylammonium hydroxide, diethanolamine, diethylamine ethanol, sodium hydroxide, potassium hydroxide, and carbonic acid is preferred. Sodium, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethanol Aqueous solution of diamine, hexamethylenediamine and other alkaline compounds.

(heat hardening) After development, the exposed polyimide precursor composition is heated to close the ring of the polyimide precursor, thereby forming polyimide. The polyimide acts as a hardened relief pattern, an insulating layer.

Regarding the heating temperature for thermal curing of the polyimide precursor composition, generally speaking, the higher the thermal curing temperature, the greater the Young's modulus. From the viewpoint of making the Young's modulus of the insulating layer of this embodiment a desired value, the heating temperature is preferably 160°C or higher, more preferably 180°C or higher, and particularly preferably 200°C or higher. From the viewpoint of suppressing the influence on other members, the temperature is preferably 400°C or lower.

<Polyimide> The structure of the hardened relief pattern formed from the above-mentioned polyimide precursor composition is the following general formula (1). [Chemical 26] That is, at least one of the protective layer and the insulating layer contains polyimide having a structure of general formula (1).

X ¹ , Y ¹ and m in the general formula (1) are the same as X ¹ , Y ¹ and m in the general formula (11), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is 1 The integer above. The preferred X ¹ , Y ¹ and m in the general formula (11) are also preferred in the polyimide of the general formula (1) for the same reason.

In the case of alkali-soluble polyimide, the terminal of the polyimide can be a hydroxyl group. When the protective layer of this embodiment contains polyimide, when the IR spectrum is measured using the Attenuated Total Reflection (ATR method), the peak height near 1380 cm ^-1 and 1500 cm ^- The peak ratio of the peak height near ¹ (peak height near 1380 cm ^-1 /peak height near 1500 cm ^-1 ) is preferably 1.2 to 2.5. From the viewpoint of chemical resistance, it is preferably 1.3 or more, more preferably 1.4 or more, and particularly preferably 1.5 or more. From the viewpoint of developability, it is preferably 2.4 or less, more preferably 2.3 or less, and particularly preferably 2.2 or less. The "peak height near 1380 cm ^-1 " mentioned here is, for example, the maximum peak height in the range of 1330 to 1430 cm ^-1 . The "peak height near 1500 cm ^-1 " mentioned here is, for example, 1450 to 1550 cm. The maximum peak height within the range of ^-1 .

When the insulating layer of this embodiment contains polyimide, when the IR spectrum is measured using the Attenuated Total Reflection (ATR method), the peak height near 1380 cm ^-1 and 1500 cm ^- The peak ratio of the peak height near ¹ (peak height near 1380 cm ^-1 /peak height near 1500 cm ^-1 ) is preferably 0.2 to 1.0. From the viewpoint of chemical resistance, it is preferably 0.3 or more, more preferably 0.4 or more, and particularly preferably 0.5 or more. From the viewpoint of developability, 0.8 or less is preferred, 0.7 or less is more preferred, and 0.6 or less is particularly preferred. The "peak height near 1380 cm ^-1 " mentioned here is, for example, the maximum peak height in the range of 1330 to 1430 cm ^-1 . The "peak height near 1500 cm ^-1 " mentioned here is, for example, 1450 to 1550 cm. The maximum peak height within the range of ^-1 .

<Polybenzoethazole precursor composition> (A) Photosensitive resin As the photosensitive resin used in the polybenzoethazole precursor composition, a photosensitive resin containing a repeating unit represented by the following general formula (14) can be used. Poly(o-hydroxyamide). [Chemical 27] (In general formula (14), Y ² and Y ³ are divalent organic groups)

From the viewpoint of the adhesion between the insulating layer and the sealing material, Y ² is preferably a divalent organic group having 1 to 30 carbon atoms, and more preferably a chain alkylene group having 1 to 15 carbon atoms (wherein, the chain alkylene group is The hydrogen atom of the alkyl group may be substituted with a halogen atom), and a chain alkylene group having 1 to 8 carbon atoms and in which part or all of the hydrogen atoms are substituted with fluorine atoms is particularly preferred.

Moreover, from the viewpoint of the adhesion between the insulating layer and the sealing material, Y ³ is preferably a divalent organic group including an aromatic group, and more preferably is represented by the following general formula (6) to general formula (8) At least one structure of the divalent organic radical. [Chemical 28] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are each independently a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different) [Chemical 29] (R ₁₄ to R ₂₁ are each independently a hydrogen atom, a halogen atom, and a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same) [Chemical 30] (R ₂₂ is a divalent group or an oxygen atom, and R ₂₃ to R ₃₀ are independently a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different)

R ₂₂ in the general formula (8) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

From the viewpoint of the adhesion between the insulating layer and the sealing material, Y ³ is particularly preferably a divalent organic group containing a structure represented by the following general formula (9). [Chemical 31]

From the viewpoint of the adhesion between the insulating layer and the sealing material, Y ³ is preferably a divalent organic group having 1 to 40 carbon atoms, more preferably a divalent chain aliphatic group having 1 to 40 carbon atoms, and particularly preferably A bivalent chain aliphatic group having 1 to 20 carbon atoms.

Polybenzoethazole precursors can usually be synthesized from dicarboxylic acid derivatives and hydroxyl-containing diamines. Specifically, it can be synthesized by converting a dicarboxylic acid derivative into a dihalide derivative and then reacting it with a diamine. As the dihalide derivative, a dichloride derivative is preferred.

Dichloride derivatives can be synthesized by acting on dicarboxylic acid derivatives with a halogenating agent. As the halogenating agent, thionite chloride, phosphorus chloride, phosphorus oxychloride, phosphorus pentachloride, etc. used in the general chloride reaction of carboxylic acids can be used.

The dichloride derivative can be synthesized by reacting the dicarboxylic acid derivative with the above-mentioned halogenating agent in a solvent, reacting in an excess halogenating agent and then distilling off the excess component, etc. .

Examples of dicarboxylic acids used as dicarboxylic acid derivatives include isophthalic acid, terephthalic acid, and 2,2-bis(4-carboxyphenyl)-1,1,1,3,3 ,3-Hexafluoropropene, 4,4'-dicarboxybiphenyl, 4,4'-dicarboxyldiphenyl ether (4,4'-diphenyl ether dicarboxylic acid), 4,4'-dicarboxytetraphenyl silane, bis(4-carboxyphenyl)trine, 2,2-bis(p-carboxyphenyl)propane, 5-tert-butylisophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid Dicarboxylic acid, 5-chloroisophthalic acid, 2,6-naphthalenedicarboxylic acid, malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n-butylmalonic acid Acid, succinic acid, tetrafluorosuccinic acid, methylsuccinic acid, 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, pentanoic acid Diacid, hexafluoroglutaric acid, 2-methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl -3-Methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipic acid, octafluoroadipic acid, pimelic acid, 2,2,6,6-tetramethylheptane Diacid, suberic acid, dodecanedioic acid, azelaic acid, sebacic acid, hexafluorosebacic acid, 1,9-azelaic acid, dodecanedioic acid, tridecanedioic acid, ten Tetracanedioic acid, pentadecanedioic acid, hexadecanedioic acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid, hexadecanedioic acid, eicosanedioic acid Dioxanedioic acid, tricosanedioic acid, tetracosanedioic acid, pentacosanedioic acid, hexacosanedioic acid, heptacosanedioic acid, octacosanedioic acid, hexacosanedioic acid Alkanedioic acid, triacontanedioic acid, triacontanedioic acid, triacontanedioic acid, diglycolic acid, dicyclopentadiene carboxylic acid, etc. These can be mixed and used.

Examples of the hydroxyl-containing diamine include 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, bis (3-Amino-4-hydroxyphenyl)propane, bis(4-amino-3-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)propane, bis(4-amino) -3-Hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)-1,1, 1,3,3,3-hexafluoropropene, 2,2-bis(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropene, etc. These can be mixed and used.

(B2) Photoacid generator The photoacid generator has the function of enhancing the solubility of the light-irradiated part in an alkaline aqueous solution. Examples of the photoacid generator include naphthoquinone diazonium compounds, aryl diazonium salts, diaryl ionium salts, triarylsulfonium salts, and the like. Among them, the naphthoquinone diazonium compound is preferred because of its high sensitivity.

(C)Additives The preferred types and amounts of additives are the same as those described in the item of the polyimide precursor composition.

(D)Solvent Use solvents that can dissolve or disperse the ingredients.

(E)Others The polybenzoethazole precursor composition may include cross-linking agents, sensitizers, adhesion auxiliaries, thermal acid generators, etc.

(Develop) After the polybenzoethazole precursor composition is exposed, the unnecessary parts are rinsed with a developer. Preferable examples of the developer used include sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, tetramethylammonium hydroxide, and the like. Alkaline aqueous solution.

The above description focuses on the positive polybenzoethazole precursor composition, but a negative polybenzoethazole precursor composition may also be used.

(heat hardening) After development, the polybenzoethazole precursor composition is heated to close the ring of the polybenzoethazole precursor, thereby forming polybenzoethazole. This polybenzoethazole corresponds to the hardened relief pattern, ie the insulating layer 6 .

Regarding the heating temperature for thermal hardening of the polybenzoconazole precursor composition, from the viewpoint of suppressing the influence on other members, the heating temperature is preferably a relatively low temperature. The heating temperature is preferably 250°C or lower, more preferably 230°C or lower, more preferably 200°C or lower, especially 180°C or lower.

<Polybenzoethazole> The structure of the hardened relief pattern formed from the above-mentioned polybenzoethazole precursor composition is the following general formula (10). [Chemical 32]

U in the general formula (10) is the same as Y ² in the general formula (14), and V in the general formula (10) is the same as Y ³ in the general formula (14). Y ² and Y ³ which are preferred in the general formula (14) are also preferred in the polybenzoethazole of the general formula (10) for the same reason.

＜Polymer with phenolic hydroxyl group＞ (A)Photosensitive resin The polymer is a resin with phenolic hydroxyl groups in the molecule and is soluble in alkali. Specific examples thereof include vinyl polymers containing monomer units having phenolic hydroxyl groups such as poly(hydroxystyrene), phenol resins, poly(hydroxyamide), poly(hydroxyphenylene) ether, poly naphthol.

Among them, phenol resin is preferred in terms of low cost and small volume shrinkage during hardening, and novolak type phenol resin is particularly preferred.

Phenol resin is the condensation product of phenol or its derivatives and aldehydes. Polycondensation is carried out in the presence of catalysts such as acid or alkali. The phenol resin obtained when an acid catalyst is used is specifically called a novolak type phenol resin.

Examples of phenol derivatives include: phenol, cresol, ethylphenol, propylphenol, butylphenol, amylphenol, benzylphenol, adamantanephenol, benzyloxyphenol, xylenol, o-phenyl Diphenol, resorcinol, ethylresorcinol, hexylresorcinol, hydroquinone, pyrogallol, phloroglucinol, 1,2,4-trihydroxybenzene, rose acid, Bisphenol, bisphenol A, bisphenol AF, bisphenol B, bisphenol F, bisphenol S, dihydroxydiphenylmethane, 1,1-bis(4-hydroxyphenyl)cyclohexane, 1,4-bis (3-Hydroxyphenoxybenzene), 2,2-bis(4-hydroxy-3-methylphenyl)propane, α,α'-bis(4-hydroxyphenyl)-1,4-diisopropane Benzene, 9,9-bis(4-hydroxy-3-methylphenyl)benzene, 2,2-bis(3-cyclohexyl-4-hydroxyphenyl)propane, 2,2-bis(2-hydroxyl) -5-biphenyl)propane, dihydroxybenzoic acid, etc.

Examples of the aldehyde compound include formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, pivaldehyde, butyraldehyde, valeraldehyde, hexanal, trioxane, glyoxal, cyclohexanal, diphenyl acetaldehyde, Ethyl butyraldehyde, benzaldehyde, glyoxylic acid, 5-norphenyl-2-carbaldehyde, malondialdehyde, succinic aldehyde, glutaraldehyde, salicylic acid, naphthalene formaldehyde, terephthalaldehyde, etc.

The component (A) preferably contains (a) a phenol resin that does not have an unsaturated hydrocarbon group, and (b) a modified phenol resin that has an unsaturated hydrocarbon group. It is more preferable that the said (b) component is further modified by the reaction of a phenolic hydroxyl group and a polybasic acid anhydride.

In addition, from the viewpoint of further improving the mechanical properties (elongation at break, elastic modulus and residual stress) as component (b), it is preferably modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms. The resulting phenol resin.

(b) Modified phenolic resins with unsaturated hydrocarbon groups are usually phenols or derivatives thereof and compounds with unsaturated hydrocarbon groups (preferably those with 4 to 100 carbon atoms) (hereinafter sometimes referred to as "unsaturated hydrocarbon groups") Compounds") (hereinafter referred to as "unsaturated hydrocarbon-based modified phenol derivatives"), condensation polymerization products with aldehydes, or reaction products of phenolic resins and compounds containing unsaturated hydrocarbon groups.

The phenol derivative mentioned here can use the same thing as the phenol derivative used as the raw material of the phenol resin which is the component (A) mentioned above.

From the viewpoint of the adhesiveness and thermal shock resistance of the resist pattern, the unsaturated hydrocarbon group of the unsaturated hydrocarbon group-containing compound preferably contains two or more unsaturated groups. Moreover, from the viewpoint of compatibility when forming a resin composition and flexibility of a cured film, the unsaturated hydrocarbon group-containing compound is preferably one having 8 to 80 carbon atoms, and more preferably one having 10 to 60 carbon atoms.

Examples of unsaturated hydrocarbon group-containing compounds include unsaturated hydrocarbons having 4 to 100 carbon atoms, polybutadiene having carboxyl groups, epoxidized polybutadiene, linolenic alcohol, oleyl alcohol, unsaturated fatty acids and unsaturated fatty acid esters. Preferable unsaturated fatty acids include: crotonic acid, myristic acid, palmitoleic acid, oleic acid, elaidic acid, vaccenic acid, codoleic acid, erucic acid, tetracosyl acid, and linseed oil. acid, alpha-linolenic acid, eleostearic acid, stearidonic acid, arachidonic acid, eicosapentaenoic acid, herring acid and docosahexaenoic acid. Among these, esters of unsaturated fatty acids with 8 to 30 carbon atoms and mono- to trihydric alcohols with 1 to 10 carbon atoms are particularly preferred, and esters of unsaturated fatty acids with 8 to 30 carbon atoms and trihydric alcohols are particularly preferred. Ester of glycerol.

Esters of unsaturated fatty acids with 8 to 30 carbon atoms and glycerol are commercially available in the form of vegetable oils. Vegetable oils include non-drying oils with an iodine value of less than 100, semi-drying oils with an iodine value of more than 100 but less than 130, or drying oils with an iodine value of more than 130. Examples of non-drying oils include olive oil, morning glory seed oil, Polygonum multiflorum seed oil, camellia oil, camellia oil, castor oil and peanut oil. Examples of semi-drying oils include corn oil, cottonseed oil, and sesame oil. Examples of the drying oil include tung oil, linseed oil, soybean oil, walnut oil, safflower oil, sunflower oil, perilla oil and mustard oil. Moreover, processed vegetable oil obtained by processing these vegetable oils can also be used.

Among the above-mentioned vegetable oils, in the reaction between phenol or its derivatives or phenolic resin and vegetable oil, it is preferable to use a non-drying oil from the viewpoint of preventing gelation accompanying the progression of excessive reaction and improving the yield. On the other hand, from the viewpoint of improving the adhesion, mechanical properties and thermal shock resistance of the resist pattern, it is preferable to use dry oil. Among dry oils, tung oil, linseed oil, soybean oil, walnut oil and safflower oil are preferred, and tung oil and linseed oil are more preferred in terms of exhibiting the effect of the present invention more effectively and reliably.

These unsaturated hydrocarbon group-containing compounds may be used alone or in combination of two or more types.

When preparing component (b), first, the above-mentioned phenol derivative and the above-mentioned unsaturated hydrocarbon group-containing compound are reacted to prepare an unsaturated hydrocarbon group-modified phenol derivative. The above reaction is preferably carried out at 50 to 130°C. From the viewpoint of improving the flexibility of the cured film (resist pattern), the reaction ratio between the phenol derivative and the unsaturated hydrocarbon group-containing compound is preferably the unsaturated hydrocarbon group-containing compound 1 relative to 100 parts by mass of the phenol derivative. ~100 parts by mass, more preferably 5-50 parts by mass. If the unsaturated hydrocarbon-based compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the heat resistance of the cured film tends to decrease. In the above reaction, p-toluenesulfonic acid, trifluoromethanesulfonic acid, etc. can be used as a catalyst if necessary.

By polycondensing the unsaturated hydrocarbon group-modified phenol derivative produced by the above reaction with aldehydes, a phenol resin modified with an unsaturated hydrocarbon group-containing compound is produced. As the aldehydes, the same aldehydes as described above for obtaining the phenol resin can be used.

The reaction between the above-mentioned aldehydes and the above-mentioned unsaturated hydrocarbon-modified phenol derivative is a condensation polymerization reaction, and previously known synthesis conditions of phenol resins can be used. The reaction is preferably carried out in the presence of a catalyst such as acid or alkali, and more preferably an acid catalyst is used. Examples of the acid catalyst include hydrochloric acid, sulfuric acid, formic acid, acetic acid, p-toluenesulfonic acid, and oxalic acid. These acid catalysts can be used individually by 1 type or in combination of 2 or more types.

The above reaction is usually preferably carried out at a reaction temperature of 100 to 120°C. In addition, the reaction time varies depending on the type and/or amount of the catalyst used, but is usually 1 to 50 hours. After the reaction is completed, the reaction product is dehydrated under reduced pressure at a temperature below 200°C to obtain a phenol resin modified with an unsaturated hydrocarbon-containing compound. Furthermore, solvents such as toluene, xylene, and methanol can be used in the reaction.

Phenol resin modified with an unsaturated hydrocarbon group-containing compound can also be obtained by polycondensing the above-mentioned unsaturated hydrocarbon group-modified phenol derivative with compounds other than phenols such as m-xylene and aldehydes. In this case, the molar ratio of the compound other than the phenolic compound to the compound obtained by reacting the phenol derivative and the unsaturated hydrocarbon group-containing compound is preferably less than 0.5.

The component (b) can also be obtained by reacting the phenol resin of the component (a) and an unsaturated hydrocarbon group-containing compound.

The same unsaturated hydrocarbon group-containing compound as the above-mentioned unsaturated hydrocarbon group-containing compound can be used to react with the phenol resin.

The reaction between phenolic resin and unsaturated hydrocarbon-containing compounds is usually preferably carried out at 50 to 130°C. Furthermore, regarding the reaction ratio between the phenol resin and the unsaturated hydrocarbon group-containing compound, from the viewpoint of improving the flexibility of the cured film (resist pattern), the unsaturated hydrocarbon group-containing compound 1 is preferred relative to 100 parts by mass of the phenol resin. ~100 parts by mass, more preferably 2-70 parts by mass, still more preferably 5-50 parts by mass. If the content of the unsaturated hydrocarbon-based compound is less than 1 part by mass, the flexibility of the cured film will tend to decrease. If it exceeds 100 parts by mass, the possibility of gelation during the reaction will tend to increase, and the cured film will Tendency to reduce heat resistance. At this time, p-toluenesulfonic acid, trifluoromethanesulfonic acid, etc. can be used as a catalyst if necessary. Furthermore, solvents such as toluene, xylene, methanol, and tetrahydrofuran can be used in the reaction.

The remaining phenolic hydroxyl groups in the phenolic resin modified by the unsaturated hydrocarbon-containing compound generated by the above method are further reacted with the polybasic acid anhydride. Therefore, an acid-modified phenol resin can also be used as the component (b). By performing acid modification with a polybasic acid anhydride and introducing a carboxyl group, in this case, the solubility of component (b) in an alkaline aqueous solution (developer) is further improved.

The polybasic acid anhydride only needs to have an acid anhydride group formed by dehydration condensation of carboxyl groups of polybasic acids having a plurality of carboxyl groups. Examples of polybasic acid anhydrides include phthalic anhydride, succinic anhydride, octenylsuccinic anhydride, penta(dodecenyl)succinic anhydride, maleic anhydride, itaconic anhydride, and tetrahydrophthalic anhydride. Acid anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, terephthalic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, Dibasic acid anhydrides such as methylendomethylene tetrahydrophthalic anhydride, tetrabromophthalic anhydride and trimellitic anhydride; biphenyl tetracarboxylic dianhydride, naphthalene tetracarboxylic dianhydride, diphenyl ether tetracarboxylic dianhydride Aromatic tetracarboxylic acid anhydrides such as carboxylic acid dianhydride, butane tetracarboxylic acid dianhydride, cyclopentane tetracarboxylic acid dianhydride, pyromellitic acid dianhydride and benzophenone tetracarboxylic acid dianhydride. These can be used individually by 1 type or in combination of 2 or more types. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably at least one selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride and hexahydrophthalic anhydride. In this case, there is an advantage that a resist pattern having a good shape can be formed.

Furthermore, (A) the alkali-soluble resin having a phenolic hydroxyl group may further contain a phenol resin acid-modified by reacting with a polybasic acid anhydride. Since the component (A) contains a phenol resin modified with a polybasic acid anhydride, the solubility of the component (A) in an alkaline aqueous solution (developer) is further improved.

Examples of the polybasic acid anhydride include phthalic anhydride, succinic anhydride, octenylsuccinic anhydride, penta(dodecenyl)succinic anhydride, maleic anhydride, itaconic anhydride, and tetrahydrophthalic anhydride. Formic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, pyridine anhydride, 3,6-endomethylenetetrahydrophthalic anhydride , methylendomethylene tetrahydrophthalic anhydride, tetrabromophthalic anhydride, trimellitic anhydride and other dianhydrides; biphenyl tetracarboxylic dianhydride, naphthalene tetracarboxylic dianhydride, diphenyl ether Tetracarboxylic dianhydride, butane tetracarboxylic dianhydride, cyclopentane tetracarboxylic dianhydride, pyromellitic acid dianhydride, benzophenone tetracarboxylic dianhydride and other aliphatic and aromatic tetracarboxylic acid anhydrides. These can be used individually by 1 type or in combination of 2 or more types. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably, for example, one or more types selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride and hexahydrophthalic anhydride.

(B2) Photoacid generator Examples of the photoacid generator include naphthoquinone diazonium compounds, aryl diazonium salts, diaryl ionium salts, triarylsulfonium salts, and the like. Among them, the naphthoquinone diazonium compound is preferred because of its high sensitivity.

(C)Additives The preferred types and amounts of additives are the same as those described in the item of the polyimide precursor composition.

(D)Solvent Use solvents that can dissolve or disperse the ingredients.

(E)Others It can include thermal cross-linking agents, sensitizers, adhesion assistants, dyes, surfactants, dissolution accelerators, cross-linking accelerators, etc. Among them, by containing a thermal crosslinking agent, when the photosensitive resin film after pattern formation is heated and hardened, the thermal crosslinking agent component reacts with the component (A) to form a crosslinked structure. Thereby, it can be hardened at a low temperature, and embrittlement or melting of the film can be prevented. As the thermal crosslinking agent component, specifically, a compound having a phenolic hydroxyl group, a compound having a hydroxymethylamine group, or a compound having an epoxy group can be preferably used.

(Develop) After exposing the polymer having phenolic hydroxyl groups, the unnecessary parts are rinsed with a developer. As the developer used, for example, alkali such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide (TMAH) can be suitably used. aqueous solution.

(heat hardening) After development, by heating the polymer having phenolic hydroxyl groups, the polymers having phenolic hydroxyl groups are thermally cross-linked with each other. The cross-linked polymer corresponds to the hardened relief pattern, that is, the insulating layer 6 .

Regarding the heating temperature for thermal hardening of the polymer having a phenolic hydroxyl group, the heating temperature is preferably a relatively low temperature from the viewpoint of suppressing the influence on other members. The heating temperature is preferably 250°C or lower, more preferably 230°C or lower, more preferably 200°C or lower, especially 180°C or lower.

＜Manufacturing method of semiconductor device) The manufacturing method of the semiconductor device of this embodiment includes: The first step is to prepare the semiconductor wafer; The second step is to cover the prepared semiconductor wafer with a sealing structure to expose at least part of the semiconductor wafer; and The third step is to form a rewiring layer on the exposed surface side of the semiconductor chip. The rewiring layer has an area larger than the semiconductor chip in a plan view and includes an insulating layer with a single-layer structure or a multiple-layer structure; In the third step, when observing the cross section of the rewiring layer, the insulating layer has a layer structure with a step difference of 0.1 μm to 1.8 μm.

Here, step 2 preferably includes: The step of forming a protective layer on a semiconductor wafer (protective layer forming step); and A step of covering the semiconductor wafer on which a protective layer is formed with a sealing structure to expose at least part of the protective layer (sealing structure forming step). Furthermore, the third step includes a step of forming a rewiring layer on the protective layer side (rewiring layer forming step).

The manufacturing method of the semiconductor device in this embodiment will be described using FIG. 4 . FIG. 4 shows an example of manufacturing steps of the semiconductor device according to this embodiment. In Figure 4A, a preprocessed wafer 10 is prepared. Thereafter, a photosensitive resin composition (photosensitive composition for forming a protective layer) is applied, and then exposure and development are performed to form a relief pattern (protective layer forming step). Then, in FIG. 4B , the wafer is cut to form a plurality of semiconductor wafers 2 . As shown in FIG. 4C , the semiconductor wafer 2 prepared in this way is attached to the support 11 at prescribed intervals.

Next, the mold resin 12 is applied from the semiconductor wafer 2 to the support 11, and then, as shown in FIG. 4D, mold sealing is performed (sealing structure forming step). Next, the support 11 is peeled off, and the mold resin 12 is reversed (see FIG. 4E ). As shown in FIG. 4E , the semiconductor chip 2 and the molding resin 12 are substantially on the same plane. Next, in the step shown in FIG. 4F , the photosensitive resin composition 13 is coated on the semiconductor wafer 2 and the molding resin 12 . Then, the applied photosensitive resin composition 13 is exposed and developed to form a relief pattern (relief pattern forming step). In addition, the photosensitive resin composition 13 may be either a positive type or a negative type. Furthermore, the relief pattern is heated to form a hardened relief pattern (insulating layer forming step). Furthermore, wiring is formed in the portion where the hardened relief pattern is not formed (wiring forming step).

Furthermore, in this embodiment, the above-described relief pattern forming step, insulating layer forming step and wiring forming step are collectively referred to as a rewiring layer forming step of forming a rewiring layer connected to the semiconductor chip 2 .

The insulation layer in the rewiring layer may be multiple layers. Therefore, the rewiring layer forming step may include a plurality of relief pattern forming steps, a plurality of insulating layer forming steps, and a plurality of wiring forming steps.

Then, in FIG. 4G , a plurality of external connection terminals 7 (bumps are formed) corresponding to each semiconductor wafer 2 are formed, and then the semiconductor wafers 2 are diced. Thereby, as shown in FIG. 4H, a semiconductor device (semiconductor IC) 1 can be obtained. In this embodiment, a plurality of fan-out semiconductor devices 1 can be obtained through the manufacturing method shown in FIG. 4 .

In this embodiment, in the above-mentioned step of forming the insulating layer, it is preferable to form it from a photosensitive resin composition that can form at least one compound of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group. insulation layer. [Other embodiments] The present embodiment has been described above, but the aspect of the present invention is not limited to the above.

For example, the sealing structure may include a sealing member that surrounds the side surface of the semiconductor wafer, and a tape that overlaps the upper surface of the semiconductor wafer (the surface opposite to the surface where the insulating layer is disposed). The sealing member may be in contact with the insulating layer, and may contain epoxy resin.

In addition, FIG. 1 shows the semiconductor wafer 2 including two wafers in parallel, but the semiconductor wafer may also include three or more wafers in parallel. Furthermore, the protective layer 8 can be omitted. In this case, the semiconductor chip and the sealing structure form substantially the same surface, and the rewiring layer is disposed on this surface. [Example]

Hereinafter, Examples performed in order to clarify the effects of the present invention will be described. In the examples, the following materials and measurement methods were used.

Hereinafter, Examples performed in order to clarify the effects of the present invention will be described.

(Polymer A-1: Synthesis of polyimide precursor) 4,4'-Oxydiphthalic dianhydride (ODPA) was added as tetracarboxylic dianhydride into a 2 liter capacity separable flask. Furthermore, 2-hydroxyethyl methacrylate (HEMA) and γ-butyrolactone were added and stirred at room temperature. Pyridine was added with stirring to obtain a reaction mixture. After the exotherm caused by the reaction ends, let it cool to room temperature and leave it for 16 hours.

Next, a solution obtained by dissolving dicyclohexylcarbodiimide (DCC) in γ-butyrolactone was added to the reaction mixture over 40 minutes while cooling in an ice bath. Then, 4,4'-diaminodiphenyl ether (DADPE) was added as a diamine over 60 minutes while stirring and suspending γ-butyrolactone. Furthermore, after stirring at room temperature for 2 hours, ethanol was added and stirred for 1 hour, and then γ-butyrolactone was added. The precipitate generated in the reaction mixture is removed by filtration to obtain a reaction liquid.

The obtained reaction liquid was added to ethanol to generate a precipitate containing a crude polymer. The generated crude polymer was filtered and dissolved in tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was added dropwise to water to precipitate the polymer. The obtained precipitate was filtered and then vacuum dried to obtain a powdery polymer (polyimide precursor (polymer A-1)). ). The masses of the compounds used are shown in the table below. The weight average molecular weight (Mw) of polymer A-1 was measured and found to be 22,000.

(Polymer A-2 and Polymer A-3: Synthesis of polyimide precursor) Except that the tetracarboxylic dianhydride and diamine are changed as shown in the following table, the reaction is carried out in the same manner as the method described in the above-mentioned polymer A-1 to obtain polyimide precursors (polymers). A-2), and (polymer A-3). The weight average molecular weight (Mw) of polymer A-2 and polymer A-3 was measured. The results showed that polymer A-2 was 21,000 and polymer A-3 was 23,000.

(Polymer A-4: Synthesis of polyimide) Add 64.1 g of 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl (TFMB) into a 1-liter detachable flask, while adding γ-butane in a nitrogen atmosphere. 400 ml of ester was added while stirring at room temperature. 97.7 g of 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) was added and stirred at room temperature for 6 hours to obtain a poly(polymer). Amino acid solution. Subsequently, 15 g of pyridine and 80 g of acetic anhydride were added, and 40 g of toluene was added. Thereafter, the mixture was stirred at 185° C. for 4 hours to confirm that the theoretical amount of water was removed. After removing toluene, the mixture was cooled to room temperature to obtain a solution containing polyimide (polymer A-4). Polymer A-4 was obtained by post-processing the obtained solution in the same manner as in the production example of polymer A-1. The weight average molecular weight (Mw) of the polymer A-4 was measured and found to be 22,000.

(Polymer B-1: Synthesis of polybenzoethazole precursor) In a 0.5-liter flask equipped with a stirrer and a thermometer, 15.48 g of 4,4'-diphenyl ether dicarboxylic acid and N-methylpyrrolidone were added as dicarboxylic acids. Cool the flask to 5°C. Thereafter, thionite chloride was added dropwise and allowed to react for 30 minutes to obtain a solution of dicarboxylic acid chloride. Then, N-methylpyrrolidone was added to a 0.5-liter flask equipped with a stirrer and a thermometer. After stirring and dissolving 12.9 g of 2,2-bis(3-amino4-hydroxyphenyl)propane and 2.18 g of m-aminophenol, pyridine was added. Then, while maintaining the temperature at 0 to 5°C, a solution of dicarboxylic acid chloride was added dropwise within 30 minutes, and then stirring was continued for 30 minutes. The solution was poured into 3 liters of water, and the precipitate was recovered, washed three times with pure water, and then dried under reduced pressure to obtain a polymer (polybenzoconazole precursor (polymer B-1)). The mass of the compound used in polymer B-1 is shown in the table below.

(Synthesis of Polymer B-2) Except that dicarboxylic acid and bisaminophenol are changed as shown in the table, the reaction is carried out in the same manner as described in the above-mentioned polymer B-1 to obtain a polybenzoethazole precursor (polymer B). -2).

(Polymer C-1: Synthesis of phenolic resin) A phenol resin containing 85 g of the C1 resin shown below and 15 g of the C2 resin shown below was prepared as polymer C-1. C1: Cresol novolak resin (cresol/formaldehyde novolak resin, m-cresol/p-cresol (molar ratio) = 60/40, polystyrene-converted weight average molecular weight = 12,000, manufactured by Asahi Organic Materials Industry Co., Ltd., Product name "EP4020G")

C2 resin: C2 resin is synthesized as shown below. <C2: Synthesis of phenol resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms> 100 parts by mass of phenol, 43 parts by mass of linseed oil, and 0.1 parts by mass of triflate were mixed and stirred at 120° C. for 2 hours to obtain a vegetable oil-modified phenol derivative (a). Subsequently, 130 g of vegetable oil-modified phenol derivative (a), 16.3 g of paraformaldehyde, and 1.0 g of oxalic acid were mixed and stirred at 90° C. for 3 hours. Then, the temperature was raised to 120°C and stirred under reduced pressure for 3 hours. Thereafter, 29 g of succinic anhydride and 0.3 g of triethylamine were added to the reaction solution, and the mixture was stirred at 100° C. for 1 hour under atmospheric pressure. The reaction liquid was cooled to room temperature, and a phenol resin (C2 resin) modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms as the reaction product (acid value 120 mgKOH/g) was obtained.

(Synthesis of Polymer C-2) Prepare 100 g of the following C1 resin as polymer C-2.

[Table 1] Table 1 polymer Tetracarboxylic dianhydride (A) Mass of A (g) Diamine(B) Mass of B (g) Polyimide precursor or polyimide Polymer A-1 4,4'-Oxydiphthalic dianhydride (ODPA) 147.11 4,4'-Diaminodiphenyl ether (DADPE) 92.9 Polymer A-2 4,4'-Oxydiphthalic dianhydride (ODPA) 147.11 4,4'-Diamino-2,2'-dimethylbiphenyl (m-TB) 98.5 Polymer A-3 4,4'-Oxydiphthalic dianhydride (ODPA) 147.11 2,2-Bis{4-(4-aminophenoxy)phenyl]propane (BAPP) 190.45 Polymer A-4 4,4'-(Hexafluoroisopropylidene)diphthalic anhydride (6FDA) 97.7 2,2'-Bis(trifluoromethyl)-4,4'-diaminobiphenyl (TFMB) 64.1 polymer Dicarboxylic acid(C) Mass of C(g) Diaminophenol(D) Mass of D(g) Polybenzoethazole precursor Polymer B-1 4,4'-Diphenyletherdicarboxylic acid 15.48 2,2-bis(3-amino-4-hydroxyphenyl)propane 12.9 Polymer B-2 4,4'-Diphenyletherdicarboxylic acid 15.48 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane 18.3 polymer Cresol novolak resin (E) Mass of E(g) Modified phenol resin (F) Mass of F (g) Phenolic resin Polymer C-1 C1 resin 85 C2 resin 15 Polymer C-2 C1 resin 100 C2 resin 0

[Preparation Examples 1 to 11] and [Comparative Preparation Examples 1 to 3] Prepare as shown in the table below to obtain a solution of the photosensitive resin composition. In addition, the unit of the preparation amount of each component in Table 1 is parts by mass. The steps, chemical resistance test results, and adhesion listed in the table were measured according to the following methods.

Regarding the produced photosensitive resin composition, (1) step difference in cross-sectional observation of the insulating layer of the rewiring layer was measured as follows. Furthermore, regarding the produced photosensitive resin composition, (2) chemical resistance and (3) adhesiveness of the insulating layer of the rewiring layer were tested. The results of each test are shown in the table below.

[Example 1] (1) Step difference (1-1) Fabrication of semiconductor devices The upper surface and side surfaces of a 6-inch silicon wafer (manufactured by Fujimi Electronics Co., Ltd., thickness 625±25 μm) as a semiconductor wafer are covered with epoxy resin as a molding resin, A sealing material is thereby formed.

On the lower surface of the wafer (the surface of the wafer not covered by the sealing material), use a sputtering device (type L-440S-FHL, manufactured by CANON ANELVA Co., Ltd.) to sequentially sputter 200 nm thick Ti and 400 nm thick Ti. Cu. Then, the resin composition of Preparation Example 1 was spin-coated on the wafer using a coating developer (D-Spin60A model, manufactured by SOKUDO Co., Ltd.), and prebaked for 180 seconds using a hot plate at 110° C. to finally A coating film is formed so that the film thickness becomes 15 microns. After the coating film is formed, use the mask with the test pattern to quickly irradiate the coating film with energy of 400 mJ/cm ² using Prisma GHI (manufactured by ULTRATECH) (here, less than 5 minutes after the coating film is formed). . Subsequently, using cyclopentanone as a developer, the coating film was sprayed with a coating developer (model D-Spin60A, manufactured by SOKUDO Co., Ltd.) using the time until the unexposed portion was completely dissolved and disappeared multiplied by 1.4. Develop and obtain a relief pattern on Cu by spin spray washing with propylene glycol methyl ether acetate for 10 seconds (relief pattern formation step).

For the wafer with the relief pattern formed on Cu, a temperature-increasing programmed curing oven (VF-2000 type, manufactured by Koyo Lindberg Co., Ltd.) was used to heat-process it at 230°C for 2 hours in a nitrogen atmosphere, whereby the wafer was formed on Cu. A hardened relief pattern containing approximately 15 μm thick resin was obtained (insulating layer forming step; first insulating layer). Using the above sputtering device, 200 nm thick Ti and 400 nm thick Cu are sequentially sputtered on the obtained convex pattern (wiring forming step; wiring).

Similarly, the photosensitive resin composition obtained in Preparation Example 1 was spin-coated on the relief pattern after sputtering using a coating developer (D-Spin60A type, manufactured by SOKUDO Co., Ltd.), and then heated at 110° C. using a hot plate. Pre-bake for 180 seconds to form a coating film. Using a temperature-increasing programmed curing oven (VF-2000 type, manufactured by Koyo Lindberg Co., Ltd.), the obtained coating film was heated for 2 hours under a nitrogen atmosphere at the temperature recorded in the table below, thereby preparing the preparation example 1 A cured film (second insulating layer) containing about 5 μm thick resin is obtained on the relief pattern of the cured object. Thereby, a rewiring layer including the first insulating layer, wiring, and the second insulating layer is formed.

Then, a plurality of external connection terminals (bumps are formed) corresponding to each semiconductor wafer are formed on the side of the rewiring layer opposite to the sealing material, and the semiconductor wafers are diced to produce the semiconductor device of Example 1. The semiconductor device is a fan-out wafer level chip size package type semiconductor device.

(1-2) Determination of step difference The step difference was measured by cutting the cross section of the rewiring layer in the semiconductor device of Example 1 using a focused ion beam (FIB) device (JIB-4000 manufactured by Japan Electronics Corporation) and observing the cross section.

(2) Chemical resistance test Regarding the semiconductor device of Example 1 produced in (1), an approximately 5 μm-thick cured film (the second insulating layer) formed on the relief pattern of the cured material (the first insulating layer) in the rewiring layer was layer insulation layer) was immersed in a chemical solution (DMSO: 70 wt%, 2-aminoethanol: 25 wt%, TMAH: 5 wt%) at 50°C for 5 minutes. Thereafter, the film thickness of the insulating layer was measured using a Tencor P-15 step meter (manufactured by KLA-Tencor Corporation) and compared with that before chemical treatment to calculate the dissolution rate (nm/min).

(3)Tightness test Regarding the semiconductor device of Example 1 produced in (1), an approximately 5 μm thick cured film (second layer) was formed on the relief pattern of the cured material (first insulating layer) in the rewiring layer. After reflowing the insulating layer) five times, the adhesion characteristics between the copper substrate/insulating layer (hardened resin coating film) were evaluated based on the following criteria using the cross-cutting method in accordance with JIS K 5600-5-6. "Excellent": The lattice number of the insulating layer connected to the substrate is between 80 and 100 "Yes": The lattice number of the insulating layer connected to the substrate is more than 40 and less than 80 "Impossible": The number of lattice of the insulating layer connected to the substrate does not reach 40 Furthermore, the reflow soldering was performed under simulated reflow soldering conditions using a mesh belt continuous baking oven (manufactured by Koyo Thermo Systems, model name 6841-20AMC-36) in a nitrogen environment, heating to a peak temperature of 260°C. The simulated reflow conditions are based on the reflow conditions described in Section 7.6 of IPC/JEDEC J-STD-020A, a standard specification of the U.S. Semiconductor Industry Association, regarding the evaluation method of semiconductor devices. It is assumed that the melting point of the solder is a high temperature of 220°C. , and standardize.

(4) Young’s modulus measurement The resin composition prepared in the preparation example was spin-coated on a 6-inch silicon wafer substrate with an aluminum evaporation layer on the surface in such a manner that the film thickness after curing became 10 μm, and pre-baked at 110°C for 4 minutes. Thereafter, a vertical curing oven (model name VF-2000B manufactured by Koyo Lindberg Co., Ltd.) was used to perform heat curing treatment for 2 hours at the curing temperature described in the table to produce a wafer on which a resin film (insulating layer) was formed. A wafer cutting machine (DAD3350 manufactured by DISCO Co., Ltd.) was used to cut a 3 mm wide slit in the resin film of the wafer, and then the resin film was immersed in a dilute hydrochloric acid aqueous solution overnight to peel off the resin film and dry it. Cut it into a length of 50 mm and use it as a sample. Using TENSILON (UTM-II-20 manufactured by ORIENTEC Corporation), the Young's modulus of the above sample was measured at a test speed of 40 mm/min and an initial weighting of 0.5 fs.

(5) Use the ATR method to calculate the peak ratio. Use a Fourier Transform Infrared Spectrometer (FT-IR) manufactured by Thermo Fisher Scientific, with a measurement range of 4000 to 400 cm ^-1 and a measurement number of 50 times to form a pair with The wafers of the resin film obtained by the same method as above (4) were measured. Find the peak height near 1380 cm ^-1 and the peak height near 1500 cm ^-1 of the cured film, and calculate the peak ratio (peak height near 1380 cm ^-1 /peak height near 1500 cm ^-1 ).

[Table 2] Table 2 photoinitiator D-1 photoacid generator D-2 Cross-linking agent E-1 2-Ethylhexyloxetane E-2 Bisphenol A type epoxy resin E-3 E-4 Tris(2-hydroxyethyl)isocyanurate E-5 Tetraethylene glycol dimethacrylate Solvent G-1 γ-butyrolactone G-2 DMSO G-3 Propylene glycol monomethyl ether acetate G-4 Ethyl lactate

[table 3] table 3 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Comparative example 1 Comparative example 2 Comparative example 3 Deployment example 1 Deployment example 2 Deployment example 3 Deployment example 4 Deployment example 5 Deployment example 6 Deployment example 7 Deployment example 8 Deployment example 9 Deployment example 10 Comparative deployment example 1 Comparative deployment example 2 Comparative deployment example 3 polymer A-1 100 100 100 A-2 100 100 A-3 100 100 A-4 100 B-1 100 B-2 100 100 C-1 100 C-2 100 photoinitiator D-1 2 2 2 2 5 5 2 photoacid generator D-2 10 10 15 15 10 10 Cross-linking agent E-1 50 50 E-2 20 20 E-3 15 15 15 E-4 50 80 50 80 50 80 25 100 E-5 10 20 10 20 10 20 10 20 Solvent G-1 160 160 160 160 160 160 225 225 160 225 225 G-2 40 40 40 40 40 40 40 G-3 25 25 25 25 G-4 120 120 Hardening temperature (℃) 230 230 230 230 230 230 230 230 230 230 230 230 230 Step difference (μm) 1.7 1.1 1.8 1.5 1.6 1.1 1.6 1.4 0.3 0.6 2.6 0.05 2.0 Chemical resistance test (nm) 3 20 2 15 15 20 5 25 70 95 30 200 50 Tightness test Can Excellent Can Can Can Excellent Can Can Excellent Excellent No Can No peak ratio 0.6 0.6 1 1 0.52 0.52 - - - - 0.6 0.5 - Young's modulus (GPa) 3.2 3.2 4.1 4.1 2.9 2.9 2.5 2.5 3.3 3.5 3.2 2.9 2.5

As can be seen from the table, according to the results of the semiconductor devices of Examples 1 to 10, by setting the step difference within a certain range, it is possible to both improve the chemical resistance of the insulating layer and ensure the close contact between the insulating layer and the wiring after thermal history. sex. [Industrial availability]

The present invention is preferably applied to a semiconductor device having a semiconductor chip and a rewiring layer connected to the semiconductor chip, especially a fan-out type wafer level chip size package type semiconductor device.

1:Semiconductor device 2:Semiconductor wafer 2a:Terminal 3:Sealing material 4:Rewiring layer 4a, 4b, 4c:Rewiring layer 5: Wiring 6: Insulating layer (interlayer insulating film) 7:External connection terminal 8: Protective layer 8a:hole 10:wafer 11:Support 12:Molding resin 13: Photosensitive resin composition 52b: Wiring 52c: Wiring 61a: 1st layer of insulation 61b: 1st layer of insulation 61c: 1st layer of insulation 62a: 2nd layer of insulation 62c: 2nd layer of insulation 63a: 3rd layer of insulation 63b: 3rd layer of insulation 63c: 3rd layer of insulation Bt: Bottom of embossed pattern C1: Maximum convex part C2: Maximum convex part D1: Maximum recess D2: Maximum concave part D3: Maximum recess G1: The step difference in the first layer G2: Level difference in layer 2 G3: Level difference in the third layer

FIG. 1 is a schematic cross-sectional view of the semiconductor device according to this embodiment. FIG. 2 is a schematic plan view of the semiconductor device according to this embodiment. FIG. 3 is a diagram for explaining an example of the step structure of the semiconductor device according to this embodiment. 4A to 4H are examples of manufacturing steps of the semiconductor device according to this embodiment.

2a:Terminal 3:Sealing material 4a, 4b, 4c:Rewiring layer 8: Protective layer 52b: Wiring 52c: Wiring 61a: 1st layer of insulation 61b: 1st layer of insulation 61c: 1st layer of insulation 62a: 2nd layer of insulation 62c: 2nd layer of insulation 63a: 3rd layer of insulation 63b: 3rd layer of insulation 63c: 3rd layer of insulation Bt: Bottom of embossed pattern C1: Maximum convex part C2: Maximum convex part D1: Maximum recess D2: Maximum concave part D3: Maximum recess G1: The step difference in the first layer G2: Level difference in layer 2 G3: Level difference in the third layer

Claims (40)

A semiconductor device having: semiconductor wafers; A sealing structure that covers the above-mentioned semiconductor wafer and exposes at least part of it; and A rewiring layer, which is arranged on the surface side of the above-mentioned semiconductor chip that is not covered by the above-mentioned sealing structure, and has an area larger than the above-mentioned semiconductor wafer in a plan view; The above-mentioned rewiring layer includes an insulating layer with a single-layer structure or a multiple-layer structure, Observed from the cross-section of the above-mentioned rewiring layer, the layer structure included in the above-mentioned insulating layer includes a step difference of 0.1 μm to 1.8 μm. The semiconductor device of claim 1, wherein the step difference is the difference between the largest convex portion and the largest concave portion in the layer structure. The semiconductor device according to claim 1, wherein the rewiring layer has a layer structure of three or more layers. The semiconductor device of claim 1, wherein the semiconductor chip includes a plurality of wafers in parallel. The semiconductor device of claim 1, wherein the rewiring layer has an intermediate layer electrically connected to the semiconductor chip, and the insulating layer covering the intermediate layer. The semiconductor device of claim 1, wherein the sealing structure is in contact with the insulating layer. The semiconductor device of claim 1, wherein the sealing structure includes epoxy resin. The semiconductor device of claim 1, wherein the step difference is 0.4 μm to 1.8 μm. The semiconductor device of claim 1, wherein the insulating layer contains at least one selected from the group consisting of carbon (C), hydrogen (H), nitrogen (N), oxygen (O), silicon (Si) and titanium (Ti). And constitute. The semiconductor device of claim 1, wherein the insulating layer does not contain halogen. The semiconductor device of claim 1, wherein the insulating layer includes at least one selected from the group consisting of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group. The semiconductor device of Claim 1, wherein the insulating layer contains polyimide, and when the IR spectrum is measured using a total reflection measurement method (ATR method), the peak height near 1380 cm ^-1 and the peak height near 1500 cm ^-1 The high peak ratio (peak height near 1380 cm ^-1 /peak height near 1500 cm ^-1 ) is 0.2 to 1.0. The semiconductor device of claim 1, wherein the semiconductor device further includes a protective layer for protecting the semiconductor chip, The protective layer is disposed between the semiconductor chip and the insulating layer. The semiconductor device of claim 13, wherein the protective layer is in contact with at least one of the semiconductor chip and the insulating layer. The semiconductor device of claim 13, wherein holes are formed in the protective layer, Through the hole, the semiconductor wafer is electrically connected to the intermediate layer electrically connected to the semiconductor wafer. The semiconductor device according to claim 15, wherein the ratio of the opening area originating from the hole in the surface of the protective layer on the side of the semiconductor chip is less than half. The semiconductor device of claim 13, wherein the protective layer includes at least one selected from the group consisting of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group. The semiconductor device of claim 13, wherein the protective layer contains polyimide, and when the IR spectrum is measured using a total reflection measurement method (ATR method), the peak height is around 1380 cm ^-1 and the peak height is around 1500 cm ^-1 The peak ratio (peak height near 1380 cm ^-1 /peak height near 1500 cm ^-1 ) is 1.2 to 2.5. The semiconductor device of claim 13, wherein at least one of the protective layer and the insulating layer contains polyimide having a structure of the following general formula (1), [Chemical 1] (In the general formula (1), X ¹ is a tetravalent organic group derived from tetracarboxylic dianhydride, Y ¹ is a divalent organic group derived from diamine, and m is an integer of 1 or more). The semiconductor device of Claim 19, wherein X ¹ in the above general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the above general formula (1) is a divalent organic group containing an aromatic ring. . The semiconductor device of Claim 19, wherein X ¹ in the above-mentioned general formula (1) includes at least one structure represented by the following general formulas (2) to (4), [Chemical 3] [Chemical 4] (In the general formula (4), R ₉ is an oxygen atom, a sulfur atom or a divalent organic group). The semiconductor device of claim 21, wherein X ¹ in the above general formula (1) includes a structure represented by the following general formula (5), [Chemical Formula 5] . The semiconductor device of Claim 19, wherein Y ¹ in the above general formula (1) includes at least one structure represented by the following general formula (6) to general formula (8), [Chemical Formula 6] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are each independently a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different) [Chemical 7] (R ₁₄ to R ₂₁ are each independently a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be different from each other or the same) [Chemical 8] (R ₂₂ is a divalent group or an oxygen atom, and R ₂₃ to R ₃₀ are each independently a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different). The semiconductor device of claim 19, wherein Y ¹ in the above general formula (1) includes a structure represented by the following general formula (9), [Chemical 9] . The semiconductor device of claim 11, wherein the insulating layer contains the polybenzoethazole having a structure of the following general formula (10), [Chemical 10] (In the general formula (10), U and V are divalent organic groups). The semiconductor device of claim 25, wherein U in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms. The semiconductor device of claim 26, wherein U in the general formula (10) is a chain alkylene group having 1 to 8 carbon atoms and in which part or all of the hydrogen atoms are replaced by fluorine atoms. The semiconductor device of claim 25, wherein V in the general formula (10) is a divalent organic group including an aromatic group. The semiconductor device of claim 28, wherein V in the general formula (10) includes at least one structure represented by the following general formulas (6) to (8), [Chemical 11] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are each independently a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different) [Chemical 12] (R ₁₄ to R ₂₁ are each independently a hydrogen atom, a halogen atom, and a monovalent organic group having 1 to 5 carbon atoms, and may be different from each other or the same) [Chemical 13] (R ₂₂ is a divalent group or an oxygen atom, and R ₂₃ to R ₃₀ are each independently a hydrogen atom, a halogen atom, or a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different). The semiconductor device of Claim 29, wherein V in the above-mentioned general formula (10) includes a structure represented by the following general formula (9), [Chemical Formula 14] . The semiconductor device of claim 25, wherein V in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms. The semiconductor device of claim 31, wherein V in the general formula (10) is a bivalent chain aliphatic group having 1 to 20 carbon atoms. The semiconductor device according to claim 11, wherein the polymer having a phenolic hydroxyl group contains a novolak type phenol resin. The semiconductor device of claim 11, wherein the polymer having a phenolic hydroxyl group includes a phenol resin that does not have an unsaturated hydrocarbon group and a modified phenol resin that has an unsaturated hydrocarbon group. The semiconductor device of claim 1, wherein the insulating layer includes a first insulating layer and a second insulating layer having a composition different from that of the first insulating layer. The semiconductor device according to any one of claims 1 to 35, wherein the semiconductor device is a fan-out wafer level chip size package type semiconductor device. A method of manufacturing a semiconductor device, which includes: The first step is to prepare the semiconductor wafer; The second step is to cover the prepared semiconductor wafer with a sealing structure and expose at least part of the semiconductor wafer; and The third step is to form a rewiring layer on the exposed surface side of the semiconductor chip. The rewiring layer has an area larger than the semiconductor chip in a plan view and includes an insulating layer with a single-layer structure or a multiple-layer structure; In the above-mentioned third step, when observing the cross-section of the above-mentioned rewiring layer, the step difference of the layer structure included in the above-mentioned insulating layer is 0.1 μm to 1.8 μm. The method for manufacturing a semiconductor device according to claim 37, which includes a step of forming an insulating layer based on the photosensitivity of at least one compound that can form polyimide, polybenzozoazole, and a polymer having a phenolic hydroxyl group. The resin composition forms the above-mentioned insulating layer. The manufacturing method of a semiconductor device as claimed in claim 37 or 38, wherein Step 2 above includes: The step of forming a protective layer on the above-mentioned semiconductor wafer; and The step of covering the semiconductor wafer on which the protective layer is formed with a sealing structure and exposing at least part of the protective layer; Step 3 above includes The step of forming the above-mentioned rewiring layer on the side of the above-mentioned protective layer. The method for manufacturing a semiconductor device according to claim 39, which includes a step of forming a protective layer based on the photosensitivity of at least one compound that can form polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group. The resin composition forms the above-mentioned protective layer.