TWI816256B - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

An object of the present invention is to provide a semiconductor device having excellent adhesion between an interlayer insulating film and a sealing material in a rewiring layer and excellent electrical characteristics, and a manufacturing method thereof. The semiconductor device (1) of the present invention is characterized in that it includes a semiconductor wafer (2), a sealing material (3) covering the semiconductor wafer, and a rewiring layer (4) having an area larger than that of the semiconductor wafer in plan view, and the rewiring layer is The weight reduction rate of the interlayer insulating film (6) after being heated to 700°C at 10°C/min in an air environment is 5 to 95% by weight. According to the present invention, it is possible to provide a semiconductor device having excellent adhesion between the interlayer insulating film and the sealing material in the rewiring layer and excellent electrical characteristics, and a manufacturing method thereof.

Description

Semiconductor device and manufacturing method thereof

The present invention relates to a semiconductor device and a manufacturing method thereof.

There are various methods of semiconductor packaging in semiconductor devices. As a semiconductor packaging method, there is, for example, the following packaging method: covering the semiconductor wafer with a sealing material (molding resin) to form an element sealing material, and then forming a rewiring layer electrically connected to the semiconductor wafer. Among semiconductor packaging methods, a semiconductor packaging method called fan-out has become mainstream in recent years.

In a fan-out type semiconductor package, a chip sealing body larger than the chip size of the semiconductor chip is formed by covering the semiconductor chip with a sealing material. Furthermore, a rewiring layer is formed that reaches the area of the semiconductor chip and the sealing material. The rewiring layer is formed with a thin film thickness. In addition, the rewiring layer can be formed to the area of the sealing material, so the number of external connection terminals can be increased.

For example, the following Patent Document 1 is known as a fan-out type semiconductor device. [Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Laid-Open No. 2011-129767

[Problem to be solved by the invention]

Fan-out semiconductor devices require high adhesion between the interlayer insulating film and the sealing material in the rewiring layer. However, in previous fan-out semiconductor devices, the adhesion between the interlayer insulating film and the sealing material in the rewiring layer was not sufficient. In addition, in antenna-integrated modules and the like, there is a tendency for electrical characteristics to degrade.

The present invention was made in view of this aspect, and an object of the present invention is to provide a semiconductor device having excellent adhesion between an interlayer insulating film and a sealing material in a rewiring layer and excellent electrical characteristics, and a manufacturing method thereof. [Technical means to solve problems]

The semiconductor device of the present invention is characterized in that it includes a semiconductor wafer, a sealing material covering the semiconductor wafer, and a rewiring layer having an area larger than that of the semiconductor wafer when viewed from above, and the interlayer insulating film of the rewiring layer is 10 in an air environment. °C/min The weight reduction rate after heating to 700 °C is 5 to 95% by weight. In another aspect, the semiconductor device of the present invention is characterized by including a semiconductor wafer, a sealing material covering the semiconductor wafer, and a rewiring layer having an area larger than that of the semiconductor wafer in plan view, and the rewiring layer is When the interlayer insulating film is kept at 100°C for 60 minutes, the amount of volatile gas per 1 cm ² is 0.2×10 ^-6 ~ 2.5×10 ^-6 Pa. Furthermore, in yet another aspect of the present invention, a semiconductor device of the present invention is characterized by including a semiconductor wafer, a sealing material covering the semiconductor wafer, and a rewiring layer having an area larger than that of the semiconductor wafer in plan view, and the rewiring layer is When the interlayer insulating film is kept at 100°C for 60 minutes, the amount of volatile gas per 1 cm ² is 0.4×10 ^-6 ~ 1.8×10 ^-6 Pa.

In the present invention, it is preferable that the sealing material and the interlayer insulating film are in direct contact.

In the present invention, it is preferable that the sealing material contains epoxy resin.

In the present invention, it is preferable that the interlayer insulating film contains at least one selected from the group consisting of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group.

In the present invention, it is preferable that the interlayer insulating film contains polyimide having a structure of the following general formula (1). [Chemical 1] (In the general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more)

In the present invention, it is preferable that X ¹ in the above general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the above general formula (1) is a divalent organic group containing an aromatic ring.

In the present invention, it is preferable that X ¹ in the above general formula (1) contains at least one structure represented by the following general formulas (2) to (4). [Chemicalization 2] [Chemical 3] [Chemical 4] (In general formula (4), R ₉ is an oxygen atom, a sulfur atom or a divalent organic group)

It is preferable that X ¹ in the above-mentioned general formula (1) contains a structure represented by the following general formula (5). [Chemistry 5]

It is preferable that Y ¹ in the above-mentioned general formula (1) contains at least one structure represented by the following general formulas (6) to (8). [Chemical 6] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different) [Chemical 7] (R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be different from each other or the same) [Chemical 8] (R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different)

In the present invention, it is preferable that Y ¹ in the above general formula (1) contains a structure represented by the following general formula (9). [Chemical 9]

In the present invention, it is preferred that the polybenzoethazole contains a polybenzoethazole having a structure represented by the following general formula (10). [Chemical 10] (In general formula (10), Y ² and Y ³ are divalent organic groups)

In the present invention, it is preferred that Y ² in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms.

In the present invention, it is preferable that Y ² in the general formula (10) is a chain alkylene group having 1 to 8 carbon atoms and in which part or all of the hydrogen atoms are substituted with fluorine atoms.

In the present invention, it is preferable that Y ³ in the above general formula (10) is a divalent organic group containing an aromatic group.

In the present invention, it is preferable that Y ³ in the above general formula (10) contains at least one structure represented by the following general formulas (6) to (8). [Chemical 11] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom and a monovalent aliphatic group having 1 to 5 carbon atoms, and may be the same or different) [Chemical 12] (R ₁₄ to R ₂₁ are hydrogen atoms, halogen atoms, and monovalent organic groups having 1 to 5 carbon atoms. They may be different from each other or may be the same) [Chemical 13] (R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different)

It is preferable that Y ³ in the above general formula (10) contains a structure represented by the following general formula (9). [Chemical 14]

In the present invention, it is preferred that Y ³ in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms.

In the present invention, it is preferred that Y ³ in the general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms.

In the present invention, it is preferred that the polymer having a phenolic hydroxyl group contains a novolac-type phenol resin.

In the present invention, it is preferable that the polymer having a phenolic hydroxyl group contains a phenol resin that does not have an unsaturated hydrocarbon group and a modified phenol resin that has an unsaturated hydrocarbon group.

In the present invention, it is preferable that the interlayer insulating film contains a filler.

In the present invention, it is preferred that the filler is an inorganic filler.

In the present invention, it is preferred that the filler is in the form of particles.

In the present invention, it is preferable that the shape of the filler is spherical.

In the present invention, it is preferred that the primary particle size of the above-mentioned filler is 5 nm to 1 μm.

In the present invention, the rewiring layer preferably includes a first interlayer insulating film layer, a second interlayer insulating film layer, and the first interlayer insulating film layer and the above-mentioned interlayer insulating film layer when viewed in cross section. The second interlayer insulating film layer is different and is provided in an intermediate layer between the first interlayer insulating film layer and the second interlayer insulating film layer.

In the present invention, it is preferable that the first interlayer insulating film layer is in contact with the sealing material, and the weight reduction rate of the first interlayer insulating film layer after being heated to 700°C at 10°C/min in an air environment is 5 ~95% by weight.

In the present invention, it is preferable that the second interlayer insulating film layer has a composition different from that of the first interlayer insulating film layer.

In the present invention, it is preferable that the weight reduction rate of the above-mentioned second interlayer insulating film layer after being heated to 700°C at 10°C/min in an air environment is the same as that of the above-mentioned first interlayer insulating film layer after being heated at 10°C in an air environment. /min after heating to 700°C, the weight loss rate is different.

In the present invention, it is preferred that the semiconductor device is a fan-out type wafer-level chip size package type semiconductor device.

In the present invention, it is preferable that the weight reduction rate of the interlayer insulating film of the rewiring layer after being heated to 700°C at 10°C/min in an air environment is 10 to 95% by weight.

In the present invention, it is preferable that the weight reduction rate of the interlayer insulating film of the rewiring layer after being heated to 700°C at 10°C/min in an air environment is 20 to 95% by weight.

In the present invention, it is preferable that the weight reduction rate of the interlayer insulating film of the rewiring layer after being heated to 700°C at 10°C/min in an air environment is 30 to 90% by weight.

In the present invention, it is preferable that the weight reduction rate of the interlayer insulating film of the rewiring layer after being heated to 700°C at 10°C/min in an air environment is 40 to 90% by weight.

In the present invention, it is preferable that the weight reduction rate of the interlayer insulating film of the rewiring layer after being heated to 700°C at 10°C/min in an air environment is 40 to 85% by weight.

In the present invention, it is preferable that the weight reduction rate of the interlayer insulating film of the rewiring layer after being heated to 700°C at 10°C/min in an air environment is 40 to 80% by weight.

In the present invention, it is preferable that the weight reduction rate of the interlayer insulating film of the rewiring layer after being heated to 700°C at 10°C/min in an air environment is 40 to 75% by weight.

In the present invention, it is preferable that the weight reduction rate of the interlayer insulating film of the rewiring layer after being heated to 700°C at 10°C/min in an air environment is 40 to 70% by weight. Moreover, in another aspect of this invention, the following content is preferable.

In the present invention, it is preferable that the sealing material and the interlayer insulating film are in direct contact.

In the present invention, it is preferable that the sealing material contains epoxy resin.

In the present invention, it is preferable that the interlayer insulating film contains at least one selected from the group consisting of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group.

In the present invention, it is preferable that the interlayer insulating film contains polyimide having a structure of the following general formula (1). [Chemical 15] (In the general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more)

In the present invention, it is preferable that X ¹ in the above general formula (1) is a tetravalent organic group containing an aromatic ring, and Y ¹ in the above general formula (1) is a divalent organic group containing an aromatic ring.

In the present invention, it is preferable that X ¹ in the above general formula (1) contains at least one structure represented by the following general formulas (2) to (4). [Chemical 16] [Chemical 17] [Chemical 18] (In general formula (4), R ₉ is an oxygen atom, a sulfur atom or a divalent organic group)

It is preferable that X ¹ in the above-mentioned general formula (1) contains a structure represented by the following general formula (5). [Chemical 19]

It is preferable that Y ¹ in the above-mentioned general formula (1) contains at least one structure represented by the following general formulas (6) to (8). [Chemistry 20] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different) [Chemical 21] (R ₁₄ to R ₂₁ are a hydrogen atom, a halogen atom, a monovalent organic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be different from each other or may be the same) [Chemical 22] (R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different)

In the present invention, it is preferable that Y ¹ in the above general formula (1) contains a structure represented by the following general formula (9). [Chemistry 23]

In the present invention, it is preferred that the polybenzoethazole contains a polybenzoethazole having a structure represented by the following general formula (10). [Chemistry 24] (In general formula (10), Y ² and Y ³ are divalent organic groups)

In the present invention, it is preferred that Y ² in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms.

In the present invention, it is preferable that Y ² in the general formula (10) is a chain alkylene group having 1 to 8 carbon atoms and in which part or all of the hydrogen atoms are substituted with fluorine atoms.

In the present invention, it is preferable that Y ³ in the above general formula (10) is a divalent organic group containing an aromatic group.

In the present invention, it is preferable that Y ³ in the above general formula (10) contains at least one structure represented by the following general formulas (6) to (8). [Chemical 25] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are hydrogen atoms and monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different) [Chemical 26] (R ₁₄ to R ₂₁ are hydrogen atoms, halogen atoms, and monovalent organic groups having 1 to 5 carbon atoms. They may be different from each other or may be the same) [Chemical 27] (R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different)

It is preferable that Y ³ in the above general formula (10) contains a structure represented by the following general formula (9). [Chemical 28]

In the present invention, it is preferred that Y ³ in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms.

In the present invention, it is preferred that Y ³ in the general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms.

In the present invention, it is preferred that the polymer having a phenolic hydroxyl group contains a novolac-type phenol resin.

In the present invention, it is preferable that the polymer having a phenolic hydroxyl group contains a phenol resin that does not have an unsaturated hydrocarbon group and a modified phenol resin that has an unsaturated hydrocarbon group.

In the present invention, the rewiring layer preferably includes a first interlayer insulating film layer, a second interlayer insulating film layer, and the first interlayer insulating film layer and the above-mentioned interlayer insulating film layer when viewed in cross section. The second interlayer insulating film layer is different and is provided in an intermediate layer between the first interlayer insulating film layer and the second interlayer insulating film layer.

In the present invention, it is preferable that the first interlayer insulating film layer is in contact with the sealing material, and the volatile gas when the first interlayer insulating film layer is maintained at 100°C for 60 minutes is 0.2×10 per 1 cm ^{2 -6} ~ 2.5×10 ^-6 Pa. In the present invention, it is more preferable that the first interlayer insulating film layer is in contact with the sealing material, and the volatile gas when the first interlayer insulating film layer is maintained at 100°C for 60 minutes is 0.4×10 per 1 cm ^{2 -6} ~ 1.8×10 ^-6 Pa.

In the present invention, it is preferable that the second interlayer insulating film layer has a composition different from that of the first interlayer insulating film layer.

In the present invention, it is preferable that the volatile gas when the second interlayer insulating film layer is maintained at 100°C for 60 minutes is different from the volatile gas when the first interlayer insulating film layer is maintained at 100°C for 60 minutes.

In the present invention, it is preferred that the semiconductor device is a fan-out type wafer-level chip size package type semiconductor device.

In the present invention, it is preferable that the volatile gas evaporated per 1 cm ² of the interlayer insulating film of the rewiring layer is 0.2×10 ^-6 to 2.5×10 ^-6 Pa when maintained at 100° C. for 60 minutes. In the present invention, it is more preferable that the volatile gas evaporates per 1 cm ² when the interlayer insulating film of the rewiring layer is maintained at 100° C. for 60 minutes is 0.6×10 ^-6 to 1.8×10 ^-6 Pa.

In the present invention, it is further preferred that the volatile gas evaporates per 1 cm ² when the interlayer insulating film of the rewiring layer is maintained at 100° C. for 60 minutes is 0.6×10 ^-6 to 1.6×10 ^-6 Pa.

In the present invention, it is more preferable that the volatile gas evaporates per 1 cm ² when the interlayer insulating film of the rewiring layer is maintained at 100° C. for 60 minutes is 0.6×10 ^-6 to 1.4×10 ^-6 Pa.

In the present invention, it is preferable that the interlayer insulating film contains a thermal crosslinking agent.

In the present invention, it is preferable that the interlayer insulating film contains a volatilization regulator.

In the present invention, it is preferable that the interlayer insulating film contains a thermal crosslinking agent and a volatilization regulator.

In the present invention, it is preferable that the rewiring layer includes an inorganic film in contact with the interlayer insulating film.

In the present invention, it is preferable that the inorganic film has a reaction layer in which volatile gas contained in the interlayer insulating film reacts with components of the inorganic film.

The manufacturing method of the semiconductor device of the present invention is characterized by including the steps of covering the semiconductor wafer with a sealing material and the step of forming a rewiring layer having an area larger than the semiconductor wafer in plan view and including an interlayer insulating film, and the interlayer insulating film is in the air Under ambient conditions, the weight reduction rate after heating to 700°C at 10°C/min is 5 to 95% by weight. The manufacturing method of the semiconductor device of the present invention is characterized by including the steps of covering the semiconductor wafer with a sealing material and the step of forming a rewiring layer having an area larger than the semiconductor wafer in plan view and including an interlayer insulating film, and the interlayer insulating film is formed at 100 When kept at ℃ for 60 minutes, the volatile gas content per 1 cm ² is 0.2×10 ^-6 ~ 2.5×10 ^-6 Pa. Preferably, the manufacturing method of a semiconductor device of the present invention is characterized by including the steps of covering the semiconductor wafer with a sealing material, and the step of forming a rewiring layer having an area larger than the semiconductor wafer in plan view and including an interlayer insulating film, and the interlayer insulation is When the film is kept at 100°C for 60 minutes, the volatile gas content per 1 cm ² is 0.4×10 ^-6 ~ 1.8×10 ^-6 Pa.

In the present invention, it is preferable to include the following step of forming an interlayer insulating film: forming the above-mentioned interlayer insulating film using a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group. Interlayer insulation film.

In the present invention, it is preferable that the step of forming the interlayer insulating film includes the following steps: using the weight reduction rate of the interlayer insulating film after the temperature is raised to 700°C at 10°C/min in an air environment to become 5 to 95% by weight. The above-mentioned photosensitive resin composition adjusted with fillers is used to form the above-mentioned interlayer insulating film. In the present invention, it is preferable to include the following step of forming an interlayer insulating film: forming the above-mentioned interlayer insulating film using a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group. Interlayer insulation film.

In the present invention, it is preferable that the step of forming the interlayer insulating film includes the following steps: when the interlayer insulating film is maintained at 100°C for 60 minutes, the volatile gas becomes 0.2×10 ^-6 to 2.5×10 ^-6 Pa. The adjusted photosensitive resin composition forms the interlayer insulating film. In the present invention, it is more preferable that the step of forming the interlayer insulating film includes the following steps: when the interlayer insulating film is maintained at 100°C for 60 minutes, the volatile gas becomes 0.4×10 ^-6 to 1.8×10 ^-6 Pa. The adjusted photosensitive resin composition forms the interlayer insulating film.

In the present invention, it is preferable that the step of forming the interlayer insulating film includes the following steps: when the interlayer insulating film is maintained at 100°C for 60 minutes, the volatile gas becomes 0.2×10 ^-6 to 2.5×10 ^-6 Pa. The above-mentioned photosensitive resin composition adjusted by a thermal cross-linking agent and/or a volatilization regulator forms the above-mentioned interlayer insulating film. In the present invention, it is more preferable that the step of forming the interlayer insulating film includes the following steps: when the interlayer insulating film is maintained at 100°C for 60 minutes, the volatile gas becomes 0.4×10 ^-6 to 1.8×10 ^-6 Pa. The above-mentioned photosensitive resin composition adjusted by a thermal cross-linking agent and/or a volatilization regulator forms the above-mentioned interlayer insulating film. [Effects of the invention]

According to the present invention, it is possible to provide a semiconductor device having excellent adhesion between the interlayer insulating film and the sealing material in the rewiring layer and excellent electrical measurement, and a manufacturing method thereof.

Hereinafter, one embodiment of the semiconductor device of the present invention (hereinafter simply referred to as the "embodiment") will be described in detail with reference to the drawings. In addition, the present invention is not limited to the following embodiments, and can be implemented with various changes within the scope of the spirit.

(semiconductor device) As shown in FIG. 1 , a semiconductor device (semiconductor IC (Integrated Circuit)) 1 has a semiconductor wafer 2 , a sealing material (molding resin) 3 covering the semiconductor wafer 2 , and is in close contact with the semiconductor wafer 2 and the sealing material 3 It is composed of wiring layer 4.

As shown in FIG. 1 , the sealing material 3 covers the surface of the semiconductor wafer 2 and is formed with an area larger than the area of the semiconductor wafer 2 in plan view (viewed in the direction of arrow A).

The rewiring layer 4 is composed of a plurality of wirings 5 electrically connected to a plurality of terminals 2 a provided on the semiconductor chip 2 , and an interlayer insulating film 6 burying the wirings 5 . A plurality of terminals 2 a provided on the semiconductor chip 2 are electrically connected to the wiring 5 in the rewiring layer 4 . One end of the wiring 5 is connected to the terminal 2 a, and the other end is connected to the external connection terminal 7 . The entire surface of the wiring 5 between the terminal 2 a and the external connection terminal 7 is covered with the interlayer insulating film 6 .

As shown in FIG. 1 , the rewiring layer 4 is formed to be larger than the semiconductor wafer 2 in a plan view (viewed in the direction of arrow A). The semiconductor device 1 shown in FIG. 1 is a fan-out type wafer level chip scale package (WLCSP) type semiconductor device. In a fan-out semiconductor device, the interlayer insulating film 6 in the rewiring layer 4 is in close contact with not only the semiconductor chip 2 but also the sealing material 3 . The semiconductor chip 2 contains semiconductors such as silicon and forms a circuit inside.

(Rewiring layer) The rewiring layer 4 mainly includes the wiring 5 and the interlayer insulating film 6 covering the periphery of the wiring 5 . From the viewpoint of preventing unexpected conduction with the wiring 5 , the interlayer insulating film 6 is preferably a member with high insulation properties.

Here, the "rewiring layer 4" in this embodiment refers to a thin film layer having the wiring 5 and the interlayer insulating film 6 as described above, and does not include an interposer or a printed wiring board. The semiconductor device (semiconductor IC) 1 uses the rewiring layer 4 and is therefore thinner than a semiconductor device using an interposer such as a flip-chip BGA, as shown in FIG. 4 .

In this embodiment, the film thickness of the rewiring layer 4 can be set to about 3 to 30 μm. The film thickness of the rewiring layer 4 may be 1 μm or more, 5 μm or more, or 10 μm or more. In addition, the film thickness of the rewiring layer 4 may be 40 μm or less, 30 μm or less, or 20 μm or less. When the semiconductor device 1 is viewed from above (viewed in the direction of arrow A), the following figure is shown in FIG. 2 . Furthermore, the sealing material 3 is omitted.

The semiconductor device 1 shown in FIG. 2 is configured such that the area S1 of the rewiring layer 4 is larger than the area S2 of the semiconductor chip 2 . The area S1 of the rewiring layer 4 is not particularly limited. From the viewpoint of increasing the number of external connection terminals, the area S1 of the rewiring layer 4 is preferably 1.05 times or more of the area S2 of the semiconductor chip 2 , preferably 1.1 More than 1.2 times, more preferably 1.2 times or more, particularly preferably 1.3 times or more. The upper limit is not particularly limited, but the area S1 of the rewiring layer 4 may be 50 times or less, 25 times or less, 10 times or less, or 5 times or less the area S2 of the semiconductor chip 2 . Furthermore, in FIG. 2 , the area of the portion of the rewiring layer 4 covered by the semiconductor chip 2 is also included in the area S1 of the rewiring layer 4 .

In addition, the outer shapes of the semiconductor chip 2 and the rewiring layer 4 may be the same or different. In FIG. 2 , the semiconductor chip 2 and the rewiring layer 4 have similar external shapes to a rectangle, and the shapes may also be shapes other than a rectangular shape.

The rewiring layer 4 may be one layer or a plurality of two or more layers. The rewiring layer 4 includes the wiring 5 and the interlayer insulating film 6 that buries the wiring 5 . However, the rewiring layer 4 also includes a layer composed only of the interlayer insulating film 6 or a layer composed only of the wiring 5 .

The wiring 5 is not particularly limited as long as it is a member with high conductivity, but copper is usually used.

(Sealing material) The material of the sealing material 3 is not particularly limited, but from the viewpoint of heat resistance and adhesion to the interlayer insulating film, epoxy resin is preferred.

As shown in FIG. 1 , the sealing material 3 is preferably in direct contact with the semiconductor wafer 2 and the rewiring layer 4 . Thereby, the sealing property from the surface of the semiconductor chip 2 to the surface of the rewiring layer 4 can be effectively improved.

The sealing material 3 may be a single layer or may have a plurality of layers laminated. When the sealing material 3 has a laminated structure, it may be a laminated structure of the same material or a laminated structure of different materials.

(Interlayer insulation film) This embodiment has the following characteristics: the weight reduction rate of the interlayer insulating film 6 after being heated to 700°C at 10°C/min in an air environment is 5 to 95% by weight. Hereinafter, the weight reduction rate after the temperature is raised to 700°C at 10°C/min in an air environment is simply referred to as the "weight reduction rate".

If the weight reduction rate is 5 to 95% by weight, the interlayer insulating film 6 and the sealing material 3 will have excellent adhesion during high-temperature treatment. The reason for this is not certain, but the present inventors speculate as follows.

In the manufacturing process of the fan-out type semiconductor device, in order to form the rewiring layer 4 , the photosensitive resin composition is coated on the chip sealing body including the semiconductor chip 2 and the sealing material 3 . Next, the photosensitive resin composition is exposed. Thereafter, the photosensitive resin composition is developed and cured, thereby selectively forming a portion having a cured product of the photoresin composition and a portion not having a cured product of the photoresin composition. The cured product of the photosensitive resin composition becomes the interlayer insulating film 6 . Moreover, the wiring 5 is formed in the part which does not have the hardened|cured material of the photosensitive resin composition. Usually, the rewiring layer 4 is often formed into multiple layers. That is, the photosensitive resin composition is further applied to the interlayer insulating film 6 and the wiring 5, exposed, developed, and cured.

In addition, the step of forming the interlayer insulating film 6 and the wiring 5 may include a reflow step depending on the manufacturing method. On the other hand, since the interlayer insulating film 6 needs to be patterned as described above, it often contains polar resin or additives and tends to contain moisture. It is speculated that the insulating film has undergone a temporary high-temperature thermal history such as reflow, which has caused volatilized moisture to be generated at the interface between the sealing material and the insulating film, resulting in a decrease in adhesion. When the resin content rate of the interlayer insulating film 6 is low, that is, when the weight reduction rate of the interlayer insulating film 6 is within a specific range, there is a tendency for the volatilization of moisture to be suppressed, so it exists between the sealing material 3 and the interlayer insulating film 6 The interface is less likely to accumulate gas, and the sealing material 3 and the interlayer insulating film 6 are less likely to peel off. Furthermore, when the weight reduction rate of the interlayer insulating film 6 is within a specific range, the resin content rate is sufficiently high, so that the adhesion with the sealing material can be sufficiently ensured.

The interlayer insulating film 6 of this embodiment preferably has a weight reduction rate of 5 to 95% by weight after heating to 700°C at 10°C/min in an air environment. Therefore, in this embodiment, the adhesion between the interlayer insulating film 6 and the sealing material 3 is good, and less moisture evaporates from the interlayer insulating film 6 during the thermal history, so the adhesion after the thermal history is also good.

From the viewpoint of the initial adhesion between the interlayer insulating film and the sealing material 3, the weight loss rate of the interlayer insulating film 6 is preferably 95% by weight or less, more preferably 90% by weight or less, and still more preferably 85% by weight or less. , more preferably 80% by weight or less, still more preferably 75% by weight or less.

The weight loss rate of the interlayer insulating film 6 may be 70% by weight or less, 65% by weight or less, 60% by weight or less, 55% by weight or less, or 50% by weight or less. It may be 45% by weight or less, it may be 40% by weight or less, it may be 35% by weight or less, it may be 30% by weight or less, it may be 25% by weight or less, it may be 20% by weight or less.

From the viewpoint of the adhesion between the interlayer insulating film and the sealing material 3 after the thermal history, the weight loss rate of the interlayer insulating film 6 is preferably 5% by weight or more, more preferably 10% by weight or more, and further preferably 15% by weight. % or more, more preferably 20 wt% or more, even more preferably 25 wt% or more, especially more preferably 30 wt% or more, further preferably 35 wt% or more, most preferably 40 wt% or more.

The weight loss rate of the interlayer insulating film 6 may be 45% by weight or more, 50% by weight or more, 55% by weight or more, 60% by weight or more, 65% by weight or more, or 70% by weight or more, 75% by weight or more, or 80% by weight or more.

When the weight reduction rate of the interlayer insulating film 6 in this embodiment is within a specific range, for example, the electrical characteristics of an antenna-integrated module become good. The reason is not clear, but the present inventors think as follows.

That is, when the weight reduction rate is small, the interlayer insulating film contains a large amount of materials such as inorganic fillers that are not easily reduced in weight, which tends to have a low dielectric loss tangent. Therefore, for example, there is a tendency for the deflection to be smaller when the antenna is integrated into the module compared to a separate antenna. When the weight reduction rate is large, the interlayer insulating film contains more components such as resin, so the uniformity of the components contained in the interlayer insulating film is good, causing ripples in the signal sent to or from the antenna ( The tendency of waveform chaos) to be suppressed. It is estimated that when the weight reduction rate of the interlayer insulating film 6 is within a specific range, these tendencies can be combined and the electrical characteristics can be improved.

(Interlayer Insulating Film) Another aspect of this embodiment has the following characteristics: when the interlayer insulating film 6 is maintained at 100°C for 60 minutes, the volatile gas per 1 cm ² is 0.2×10 ^-6 to 2.5×10 ^{- 6} Pa. In yet another aspect of this embodiment, the characteristic is that when the interlayer insulating film 6 is maintained at 100°C for 60 minutes, the volatile gas is 0.4×10 ^-6 to 1.8×10 ^-6 Pa per 1 cm ² . Hereinafter, the volatile gas when maintained at 100°C for 60 minutes is simply referred to as "volatile gas pressure."

If the volatile gas when the interlayer insulating film 6 is maintained at 100° C. for 60 minutes is within the above range, the adhesion between the interlayer insulating film 6 and the inorganic film 8 will be excellent. The reason for this is not certain, but the present inventors speculate as follows.

In the manufacturing process of the fan-out type semiconductor device, in order to form the rewiring layer 4 , the photosensitive resin composition is coated on the chip sealing body including the semiconductor chip 2 and the sealing material 3 . Next, the photosensitive resin composition is exposed. Thereafter, the photosensitive resin composition is developed and cured, thereby selectively forming a portion having a cured product of the photoresin composition and a portion not having a cured product of the photoresin composition. The cured product of the photosensitive resin composition becomes the interlayer insulating film 6 . Moreover, the wiring 5 is formed in the part which does not have the hardened|cured material of the photosensitive resin composition. Usually, the rewiring layer 4 is often formed into multiple layers. That is, the photosensitive resin composition is further applied to the interlayer insulating film 6 and the wiring 5, and is exposed, developed, and cured.

In addition, the step of forming the interlayer insulating film 6 and the wiring 5 may include a step of sputtering an inorganic film such as titanium depending on the manufacturing method. On the other hand, since the interlayer insulating film 6 needs to be patterned as described above, it often contains polar resin or additives and tends to contain moisture. A certain amount of moisture or components that easily volatilize in vacuum evaporate during sputtering, thereby forming a layer between the interlayer insulating film 6 and the inorganic film 8 in which the inorganic film reacts with the volatile components. When the inorganic film 8 is made of titanium, a layer containing titanium oxide is formed. This reaction layer can improve the adhesion between the interlayer insulating film 6 and the inorganic film 8 . However, if there are too many volatile components, there is a risk that the adhesion between the interlayer insulating film 6 and the inorganic film 8 may be reduced due to the volatile components.

The interlayer insulating film 6 of this embodiment preferably has a volatile gas content of 0.4×10 ^-6 to 1.8×10 ^-6 Pa per 1 cm ² when maintained at 100° C. for 60 minutes. Therefore, in this embodiment, the adhesion between the interlayer insulating film 6 and the inorganic film is good.

From the viewpoint of the adhesion between the interlayer insulating film and the inorganic film, the volatile gas pressure of the interlayer insulating film 6 when maintained at 100°C for 60 minutes is preferably 0.4×10 ^-6 Pa or more, more preferably 0.6×10 ^-6 Pa or more, more preferably 0.8×10 ^-6 Pa or more, further more preferably 1.0×10 ^-6 Pa or more.

The volatile gas pressure when the interlayer insulating film 6 is maintained at 100°C for 60 minutes is not limited as long as it is 1.8×10 ^-6 or less per 1 cm ² . It is preferably 1.8×10 ^-6 or less, more preferably 1.6×10 ^-6 or less, particularly preferably 1.4×10 ^-6 or less.

When the volatile gas pressure of the interlayer insulating film 6 of the present embodiment is maintained in a specific range when maintained at 100° C. for 60 minutes, for example, the electrical characteristics of an antenna-integrated module become good. The reason is not certain, but the present inventors think as follows.

That is, when the volatile gas pressure when kept at 100° C. for 60 minutes is low, the interlayer insulating film contains more non-volatile materials such as polymers, which tends to have a low dielectric loss tangent. Therefore, for example, there is a tendency for the deflection to be smaller when the antenna-integrated module is used as compared to a separate antenna.

In addition, the interlayer insulating film 6 in the rewiring layer 4 may be multi-layered. That is, the rewiring layer 4 may include a first interlayer insulating film layer, a second interlayer insulating film layer, and the first interlayer insulating film layer and the above-mentioned second interlayer insulating film layer when viewed in cross section. The intermediate layer is different and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer. The intermediate layer is, for example, wiring 5 .

The first interlayer insulating film layer and the second interlayer insulating film layer may have the same composition or may have different compositions. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same volatile gas pressure, or may have different volatile gas pressures. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same film thickness, or may have different film thicknesses. If the first interlayer insulating film layer and the second interlayer insulating film layer have different compositions or different volatile gas pressures or different film thicknesses, then each interlayer insulating film layer can have different properties, so it is preferable.

When the interlayer insulating film 6 is multi-layered, the volatile gas pressure when at least one layer of the interlayer insulating film 6 is maintained at 100°C for 60 minutes among the plurality of existing layers is 0.2×10 ^-6 per 1 cm ² ~2.5×10 ^-6 Pa is sufficient. When the interlayer insulating film 6 is multi-layered, it is preferable that the volatile gas pressure of at least one layer of the interlayer insulating film 6 among the plurality of existing layers is 0.4× per 1 cm ² when the interlayer insulating film 6 is maintained at 100° C. for 60 minutes. 10 ^-6 ~ 1.8×10 ^-6 Pa is sufficient.

In addition, the interlayer insulating film 6 in the rewiring layer 4 may be multi-layered. That is, the rewiring layer 4 may include a first interlayer insulating film layer, a second interlayer insulating film layer, and the first interlayer insulating film layer and the above-mentioned second interlayer insulating film layer when viewed in cross section. The intermediate layer is different and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer. The intermediate layer is, for example, wiring 5 .

The first interlayer insulating film layer and the second interlayer insulating film layer may have the same composition or may have different compositions. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same weight reduction rate, or may have different weight reduction rates. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same film thickness, or may have different film thicknesses. If the first interlayer insulating film layer and the second interlayer insulating film layer have different compositions or different weight reduction rates or different film thicknesses, then each interlayer insulating film layer can have different properties, so it is preferable.

When the interlayer insulating film 6 is multi-layered, the weight reduction rate of at least one layer of the interlayer insulating film 6 among the plurality of existing layers is 5 to 95% by weight. However, the gap between the sealing material 3 and the interlayer insulating film layer It is easy to peel off due to gas, so the weight reduction rate of the interlayer insulating film 6 in contact with the sealing material 3 is preferably 10 to 95% by weight. If the weight reduction rate of the interlayer insulating film 6 in the interlayer insulating film layer in contact with the sealing material 3 is 10 to 95% by weight, the sealing material 3 and the interlayer insulating film 6 will have excellent adhesion.

(Composition of interlayer insulating film) The composition of the interlayer insulating film 6 is not particularly limited. For example, it is preferably a film containing at least one compound selected from polyimide, polybenzoethazole, or a polymer having a phenolic hydroxyl group.

(Resin composition for forming interlayer insulating film) The resin composition used to form the interlayer insulating film 6 is not particularly limited as long as it is a photosensitive resin composition. Preferably, it contains a polyimide precursor, a polybenzoconazole precursor, or a phenolic resin composition. A photosensitive resin composition containing at least one compound of a hydroxyl polymer. The resin composition used to form the interlayer insulating film 6 may be in a liquid form or in a film form. In addition, the resin composition used to form the interlayer insulating film 6 may be a negative photosensitive resin composition or a positive photosensitive resin composition.

In this embodiment, the pattern obtained by exposing and developing the photosensitive resin composition is called a relief pattern, and the pattern obtained by heating and hardening the relief pattern is called a cured relief pattern. This hardened relief pattern becomes the interlayer insulating film 6 .

In this embodiment, the photosensitive resin composition of the interlayer insulating film 6 preferably contains a filler. The filler in this embodiment is not limited as long as it is an inert substance added for the purpose of improving strength or various properties.

From the viewpoint of suppressing an increase in viscosity when preparing the resin composition, the filler is preferably in the form of particles. Examples of the particle shape include needle-shaped, plate-shaped, spherical, etc., and from the viewpoint of suppressing an increase in viscosity when preparing a resin composition, the filler is preferably spherical.

Examples of the needle-shaped filler include wollastonite, potassium titanate, xonotlite, aluminum borate, and needle-shaped calcium carbonate.

Examples of the plate-shaped filler include talc, mica, sericite, glass flakes, montmorillonite, boron nitride, plate-shaped calcium carbonate, and the like.

Examples of the spherical filler include calcium carbonate, silicon oxide, aluminum oxide, titanium oxide, clay, hydrotalcite, magnesium hydroxide, zinc oxide, barium titanate, and the like. Among these, from the viewpoint of electrical characteristics or storage stability when formed into a resin composition, silicon oxide, aluminum oxide, titanium oxide, and barium titanate are preferred, and silicon oxide and aluminum oxide are more preferred.

As the size of the filler, in the case of a spherical shape, the primary particle diameter is defined as the size, and in the case of a plate or needle shape, the length of the long side is defined as the size. Preferably, it is 5 nm to 1000 nm, and more preferably 10 nm. nm～1000 nm. If it is 10 nm or more, the resin composition tends to be sufficiently uniform when prepared, and if it is 1000 nm or less, photosensitivity can be imparted. From the viewpoint of imparting photosensitivity, it is preferably 800 nm or less, more preferably 600 nm or less, and particularly preferably 300 nm or less. From the viewpoint of adhesiveness or resin composition uniformity, it is preferably 15 nm or more, more preferably 30 nm or more, and particularly preferably 50 nm or more.

In another aspect of this embodiment, the photosensitive resin composition of the interlayer insulating film 6 preferably contains a thermal crosslinking agent or a volatilization regulator. The photosensitive resin composition is not particularly limited, and may be a photosensitive resin composition containing at least one compound selected from a polyimide precursor, a polybenzoethazole precursor, or a polymer having a phenolic hydroxyl group. As thermal cross-linking accelerators, for example, epoxy compounds, oxybutane compounds, tetrazoline compounds, aldehydes, aldehyde modified compounds, isocyanate compounds, unsaturated bond-containing compounds, polyol compounds, polyol compounds, etc. can be preferably used. Amine compounds, melamine compounds, metal chelating agents, C-hydroxymethyl compounds, N-hydroxymethyl compounds, etc.

Examples of the volatilization regulator include polyethylene glycol, polypropylene glycol, and the like.

＜Polyimide precursor composition＞ (A)Photosensitive resin Examples of the photosensitive resin used in the polyamide precursor composition include polyamide, polyamide ester, and the like. For example, as the polyamic acid ester, a polyamic acid ester containing a repeating unit represented by the following general formula (11) can be used.

[Chemical 29] R ¹ and R ² are independently a hydrogen atom, a saturated aliphatic group with 1 to 30 carbon atoms, an aromatic group, an organic group with a carbon-carbon unsaturated double bond, or a carbon-carbon unsaturated double bond with a single valence. ions. X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more. m is preferably 2 or more, more preferably 5 or more.

When R ¹ and R ² in the above general formula (11) exist as monovalent cations, O has a negative charge (exists as -O ^- ). Moreover, X ¹ and Y ¹ may contain a hydroxyl group.

R ¹ and R ² in the general formula (11) are more preferably a monovalent organic group represented by the following general formula (12), or a monovalent organic group represented by the following general formula (13) having an ammonium ion at its terminal structure.

[Chemical 30] (In the general formula (12), R ₃ , R ₄ and R ₅ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₁ is an integer from 1 to 20)

[Chemical 31] (In the general formula (13), R ₆ , R ₇ and R ₈ are each independently a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m ₂ is an integer from 1 to 20).

A plurality of types of polyamide esters represented by the general formula (11) can be mixed. Moreover, a polyamide ester obtained by copolymerizing polyamide esters represented by the general formula (11) can be used.

X ¹ is not particularly limited. From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3 , X ¹ is preferably a tetravalent organic group containing an aromatic group. Specifically, X ¹ is preferably a tetravalent organic group containing at least one structure represented by the following general formulas (2) to (4).

[Chemical 32]

[Chemical 33]

[Chemical 34] (In the general formula (4), R ₉ is any one of an oxygen atom, a sulfur atom, and a divalent organic group)

R ₉ in the general formula (4) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom. R ₉ may contain a hydroxyl group.

From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3 , X ¹ is particularly preferably a tetravalent organic group containing a structure represented by the following general formula (5).

[Chemical 35]

Y ¹ is not particularly limited, but from the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3 , Y ¹ is preferably a divalent organic group containing an aromatic group. Specifically, Y ¹ is preferably a divalent organic group containing at least one structure represented by the following general formulas (6) to (8).

[Chemical 36] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are hydrogen atoms and monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different)

[Chemical 37] (R ₁₄ to R ₂₁ are hydrogen atoms, halogen atoms, and monovalent organic groups having 1 to 5 carbon atoms, and may be different from each other or the same)

[Chemical 38] (R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different)

R ₂₂ in the general formula (8) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3 , Y ¹ is particularly preferably a divalent organic group containing a structure represented by the following general formula (9).

[Chemical 39]

In the above-mentioned polyamide ester, X ¹ in the repeating unit is derived from the tetracarboxylic dianhydride used as the raw material, and Y ¹ is derived from the diamine used as the raw material.

Examples of tetracarboxylic dianhydride used as a raw material include pyromellitic dianhydride, diphenyl ether-3,3',4,4'-tetracarboxylic dianhydride, and benzophenone-3,3 ',4,4'-tetracarboxylic dianhydride, biphenyl-3,3',4,4'-tetracarboxylic dianhydride, diphenyl-3,3',4,4'-tetracarboxylic dianhydride Anhydride, diphenylmethane-3,3',4,4'-tetracarboxylic dianhydride, 2,2-bis(3,4-phthalic anhydride)propane, 2,2-bis(3,4 -Phthalic anhydride)-1,1,1,3,3,3-hexafluoropropane, etc., but are not limited to these. Moreover, these may be used individually or in mixture of 2 or more types.

Examples of diamines used as raw materials include p-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, and 3,3' -Diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4 '-Diaminodiphenyl, 3,4'-diaminodiphenyl, 3,3'-diaminodiphenyl, 4,4'-diaminobiphenyl, 3,4'-di Aminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone Benzophenone, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 1,4-bis( 4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, bis[4-(4-amine phenyl]terine, bis[4-(3-aminophenoxy)phenyl]terine, 4,4-bis(4-aminophenoxy)biphenyl, 4,4-bis (3-Aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 1, 4-bis(4-aminophenyl)benzene, 1,3-bis(4-aminophenyl)benzene, 9,10-bis(4-aminophenyl)anthracene, 2,2-bis(4 -Aminophenyl)propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)phenyl)propane, 2,2 -Bis[4-(4-aminophenoxy)phenyl)hexafluoropropane, 1,4-bis(3-aminopropyldimethylsilyl)benzene, o-toluidine, 9,9 -Bis(4-aminophenyl)fen, etc. Furthermore, it may also be one in which a part of the hydrogen atoms on the benzene ring is substituted. Moreover, these may be used individually or in mixture of 2 or more types.

In the synthesis of the polyamide ester (A), the following method is generally preferably used: the tetracarboxylic acid diester obtained by performing the esterification reaction of the following tetracarboxylic dianhydride is directly used for condensation with the diamine. reaction.

The alcohols used in the esterification reaction of the above-mentioned tetracarboxylic dianhydride are alcohols having olefinic double bonds. Specific examples include, but are not limited to, 2-hydroxyethyl methacrylate, 2-methacryloxyethanol, glyceryl diacrylate, glyceryl dimethacrylate, and the like. These alcohols can be used alone or in mixture of two or more types.

Regarding the specific synthesis method of the polyamide ester (A) used in this embodiment, a conventionally known method can be used. An example of the synthesis method is the method shown in International Publication No. 00/43439. That is, the method of temporarily converting the tetracarboxylic acid diester into the tetracarboxylic acid diester diacyl chloride and the diamine in the presence of a basic compound is used for condensation. reaction to produce polyamide ester (A). Moreover, the method of manufacturing a polyamide ester (A) by subjecting a tetracarboxylic acid diester and a diamine to a condensation reaction in the presence of an organic dehydrating agent is mentioned.

Examples of organic dehydrating agents include dicyclohexylcarbodiimide (DCC), diethylcarbodiimide, diisopropylcarbodiimide, and ethylcyclohexylcarbodiimide. , diphenylcarbodiamide, 1-ethyl-3-(3-dimethylaminopropyl)carbodiamide, 1-cyclohexyl-3-(3-dimethylaminopropyl) Carbodiimide hydrochloride, etc.

The weight average molecular weight of the polyamide ester (A) used in this embodiment is preferably 6,000 to 150,000, more preferably 7,000 to 50,000, even more preferably 7,000 to 20,000.

(B1) Photoinitiator When the resin composition used for forming the interlayer insulating film 6 is a negative photosensitive resin, a photoinitiator is added. As the photoinitiator, for example, benzophenone, methyl o-benzoyl benzoate, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, and benzyl ketone can be used. Benzophenone derivatives, 2,2'-diethoxyacetophenone and 2-hydroxy-2-methylpropiophenone and other acetophenone derivatives, 1-hydroxycyclohexyl phenyl ketone, 9-oxosulfide𠮿 , 2-Methyl-9-oxosulfide𠮿 , 2-isopropyl-9-oxosulfide𠮿 and diethyl-9-oxosulfide𠮿 Etc. 9-oxysulfur𠮿 Derivatives, benzoyl derivatives such as benzoyl, benzoyl dimethyl ketal and benzoyl-β-methoxyethyl acetal, benzoin derivatives such as benzoin methyl ether, 2,6-bis( Azides such as 4'-benzylidenediazide)-4-methylcyclohexanone and 2,6'-bis(4'-benzylidenediazide)cyclohexanone, 1-phenyl -1,2-Butanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2 -(O-ethoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-benzyl)oxime, 1,3-diphenylglycerol-2-(O-ethoxy Oximes such as carbonyl) oxime, 1-phenyl-3-ethoxyglycerone-2-(O-benzoyl) oxime, N-arylglycines such as N-phenylglycine, etc. Peroxides such as benzoyl oxide, aromatic biimidazole, and titanocene, etc. Among these, the above-mentioned oximes are preferred in terms of photosensitivity.

The added amount of these photoinitiators is preferably 1 to 40 parts by mass, and more preferably 2 to 20 parts by mass relative to 100 parts by mass of polyamide ester (A). By adding 1 part by mass or more of the photoinitiator with respect to 100 parts by mass of the polyamide ester (A), the photosensitivity is excellent. In addition, by adding 40 parts by mass or less, thick film curability is excellent.

(B2) Photoacid generator When the resin composition used for forming the interlayer insulating film 6 is a positive photosensitive resin, a photoacid generator is added. By containing a photoacid generator, an acid is generated in the ultraviolet-exposed part, and the solubility of the exposed part in an alkaline aqueous solution is increased. Thereby, it can be used as a positive photosensitive resin composition.

Examples of the photoacid generator include quinonediazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and phosphonium salts. Among them, a quinonediazide compound is preferably used in terms of exhibiting an excellent dissolution-inhibiting effect and obtaining a highly sensitive positive-type photosensitive resin composition. In addition, two or more photoacid generators may be contained.

＜How to adjust the weight reduction rate＞ If an inorganic filler is added to the resin composition used for forming the interlayer insulating film 6, the weight reduction rate can be adjusted. As the inorganic filler, the above-mentioned fillers can be used. ＜How to adjust the amount of volatile gas＞ If a thermal crosslinking agent or a volatilization adjusting agent is added to the resin composition used for forming the interlayer insulating film 6, the amount of volatile gas when maintained at 100° C. for 60 minutes can be adjusted. As the thermal cross-linking agent, the polymer forming the interlayer insulating film 6 reacts with the thermal cross-linking agent to cross-link, or the thermal cross-linking agents cross-link each other. The thermal cross-linking agent is not limited, and those having 3 can be preferably used. Compounds with more than functional groups (epoxy group, methacryloyl group, acrylyl group, etc.).

The volatilization regulator is not limited as long as it can adjust volatilization temperature or volatilization pressure. Among these, polyethylene glycol, polypropylene glycol, etc. can be mentioned from the viewpoint that it has a site capable of hydrogen bonding with the polar functional group of the polymer and does not cause adverse effects during development.

By using these compounds in appropriate amounts in combination, the amount of volatile gas can be appropriately adjusted.

Examples of polymers that can be preferably combined with the thermal crosslinking agent or volatilization regulator include polyimide precursors, polybenzoethazole precursors, and polymers having phenolic hydroxyl groups.

(D)Solvent There are no particular limitations as long as each component can be dissolved or dispersed in the solvent. Examples include N-methyl-2-pyrrolidone, γ-butyrolactone, acetone, methyl ethyl ketone, dimethyl serotonin, and the like. These solvents can be used in the range of 30 to 1500 parts by mass relative to 100 parts by mass of the (A) photosensitive resin, depending on the thickness and viscosity of the coating film.

(E)Others A cross-linking agent may be included in the polyimide precursor composition. As the cross-linking agent, a cross-linking agent that can cross-link the (A) photosensitive resin when the polyimide precursor composition is exposed and developed and then heated and hardened, or a cross-linking agent itself that can form a cross-linked network structure can be used. of cross-linking agent. By using a cross-linking agent, the heat resistance and chemical resistance of the cured film (interlayer insulating film) can be further enhanced.

In addition, it may contain a sensitizer to improve photosensitivity, an adhesion auxiliary to improve adhesion with the base material, etc.

(Develop) After the polyimide precursor composition is exposed, the unnecessary parts are rinsed with a developer. There is no particular limitation on the developer used. In the case of a polyimide precursor composition developed with a solvent, N,N-dimethylformamide, dimethyltrisoxide, N , N-dimethylacetamide, N-methyl-2-pyrrolidone, cyclopentanone, γ-butyrolactone, acetates and other good solvents, these good solvents are compatible with lower alcohols, water, aromatic Mixed solvents of hydrocarbons and other poor solvents, etc. After development, rinse with poor solvent if necessary.

In the case of a polyimide precursor composition developed with an alkaline aqueous solution, an aqueous solution of tetramethylammonium hydroxide, diethanolamine, diethylamine ethanol, sodium hydroxide, potassium hydroxide, and carbonic acid is preferred. Sodium, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylene glycol Aqueous solutions of alkaline compounds such as amine and hexamethylenediamine.

(heat hardening) After development, the polyimide precursor is ring-closed by heating to form polyimide. This polyimide becomes the hardened relief pattern, that is, the interlayer insulating film 6 .

The heating temperature is not particularly limited. Generally, the lower the heating hardening temperature, the smaller the refractive index difference tends to be. From the viewpoint that the refractive index difference of this embodiment does not reach 0.0150, it is preferably 200°C or lower, preferably 180°C or lower, and preferably 160°C or lower.

＜Polyimide＞ The structure of the hardened relief pattern formed from the above polyimide precursor composition is the following general formula (1).

[Chemical 40]

X ¹ , Y ¹ , and m in the general formula (1) are the same as X ¹ , Y ¹ , and m in the general formula (11). X ¹ is a 4-valent organic group, Y ¹ is a divalent organic group, and m is 1 The integer above. The preferred X ¹ , Y ¹ and m in the general formula (11) are also preferred in the polyimide of the general formula (1) for the same reason.

In the case of alkali-soluble polyimide, the terminal of the polyimide can be made into a hydroxyl group.

＜Polybenzoethazole precursor composition＞ (A)Photosensitive resin As the photosensitive resin used in the polybenzoethazole precursor composition, poly(o-hydroxyamide) containing a repeating unit represented by the following general formula (14) can be used.

[Chemical 41] (In the general formula (14), Y ² and Y ³ are divalent organic groups)

From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3, Y ² is preferably a divalent organic group having 1 to 30 carbon atoms, and more preferably is a chain alkylene group having 1 to 15 carbon atoms (where, The hydrogen atom of the chain alkylene group may be substituted with a halogen atom), and a chain alkylene group having 1 to 8 carbon atoms in which the hydrogen atom is substituted with a fluorine atom is particularly preferred.

Moreover, from the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3, Y ³ is preferably a divalent organic group containing an aromatic group, and more preferably contains the following general formulas (6) to (8). It represents a divalent organic radical of at least one structure.

[Chemical 42] (R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are hydrogen atoms and monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different)

[Chemical 43] (R ₁₄ to R ₂₁ are hydrogen atoms, halogen atoms, and monovalent organic groups having 1 to 5 carbon atoms, and may be different from each other or the same)

[Chemical 44] (R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different)

R ₂₂ in the general formula (8) is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3 , Y ³ is particularly preferably a divalent organic group containing a structure represented by the following general formula (9).

[Chemical 45]

From the viewpoint of the adhesion between the interlayer insulating film 6 and the sealing material 3, Y ³ is preferably a divalent organic group having 1 to 40 carbon atoms, and more preferably is a divalent chain aliphatic group having 1 to 40 carbon atoms. Particularly preferred is a bivalent chain aliphatic group having 1 to 20 carbon atoms.

Polybenzoethazole precursors are usually synthesized from dicarboxylic acid derivatives and hydroxyl-containing diamines. Specifically, it can be synthesized by converting a dicarboxylic acid derivative into a dihalide derivative and then reacting it with a diamine. As the dihalide derivative, a dichloride derivative is preferred.

Dichloride derivatives can be synthesized by reacting a halogenating agent with a dicarboxylic acid derivative. As the halogenating agent, thionite chloride, phosphorus chloride, phosphorus oxychloride, phosphorus pentachloride, etc. used in the general chlorination reaction of carboxylic acids can be used.

As a method of synthesizing a dichloride derivative, a method of reacting a dicarboxylic acid derivative with the above-mentioned halogenating agent in a solvent or a method of reacting an excess halogenating agent and then distilling off the excess can be used. synthesis.

Examples of dicarboxylic acids used in dicarboxylic acid derivatives include isophthalic acid, terephthalic acid, 2,2-bis(4-carboxyphenyl)-1,1,1,3,3, 3-Hexafluoropropane, 4,4'-dicarboxybiphenyl, 4,4'-dicarboxyldiphenyl ether, 4,4'-dicarboxytetraphenylsilane, bis(4-carboxyphenyl)sine, 2 ,2-bis(p-carboxyphenyl)propane, 5-tert-butylisophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6 -Naphthalenedicarboxylic acid, malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, di-n-butylmalonic acid, succinic acid, tetrafluorosuccinic acid, methylsuccinic acid Acid, 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, hexafluoroglutaric acid, 2-methylglutaric acid, 3- Methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl-3-methylglutaric acid, adipic acid, octafluoroadipic acid , 3-methyladipic acid, octafluoroadipic acid, pimelic acid, 2,2,6,6-tetramethylpimelic acid, suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid Diacid, hexafluorosebacic acid, 1,9-azelaic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, hexadecanedioic acid, heptadecanedioic acid Alkanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid, hexadecanedioic acid, behenedioic acid, tricosanedioic acid, tetracosanedioic acid, Pentacosanedioic acid, hexacosanedioic acid, heptacosanedioic acid, octacosanedioic acid, nonacosanedioic acid, triacontanedioic acid, triacontanedioic acid, hexadecanedioic acid Dioxanedioic acid, oxydiacetic acid, etc. These can be mixed and used.

Examples of the hydroxyl-containing diamine include: 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, bis (3-Amino-4-hydroxyphenyl)propane, bis(4-amino-3-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)propane, bis(4-amino) -3-Hydroxyphenyl)trine, 2,2-bis(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 2,2-bis(4 -Amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, etc. These can be mixed and used.

(B2) Photoacid generator The photoacid generator has the function of increasing the solubility of the light-irradiated part in an alkaline aqueous solution. Examples of the photoacid generator include naphthoquinone diazonium compounds, aryl diazonium salts, diaryl ionium salts, triarylsulfonium salts, and the like. Among them, the naphthoquinone diazonium compound is preferred because of its high sensitivity.

(D)Solvent There are no particular limitations as long as the solvent can dissolve or disperse each component.

(E)Others The polybenzoethazole precursor composition may contain cross-linking agents, sensitizers, adhesion auxiliaries, thermal acid generators, etc.

(Develop) After the polybenzoethazole precursor composition is exposed, the unnecessary parts are rinsed with a developer. The developer used is not particularly limited, and examples thereof include alkalis such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide. Aqueous solutions are preferred.

In the above description, the positive-type polybenzoethazole precursor composition has been mainly described, but a negative-type polybenzoethazole precursor composition may also be used.

(heat hardening) After development, the polybenzoethazole precursor is ring-closed by heating to form polybenzoethazole. This polybenzoconazole becomes the hardened relief pattern, that is, the interlayer insulating film 6 .

The heating temperature is not particularly limited, but from the viewpoint of the influence on other members, the heating temperature is preferably lower. The temperature is preferably below 250 degrees, more preferably below 230 degrees, more preferably below 200 degrees, and particularly preferably below 180 degrees.

＜Polybenzoethazole＞ The structure of the hardened relief pattern formed from the above polybenzoethazole precursor composition is the following general formula (10).

[Chemical 46]

Y ² and Y ³ in the general formula (10) are the same as Y ² and Y ³ in the general formula (14). Y ² and Y ³ which are preferred in the general formula (14) are also preferred in the polybenzoethazole of the general formula (10) for the same reason.

＜Polymer with phenolic hydroxyl group＞ (A)Photosensitive resin It is based on resins with phenolic hydroxyl groups in the molecules and is soluble in alkali. Specific examples thereof include vinyl polymers containing monomer units having phenolic hydroxyl groups such as poly(hydroxystyrene), phenol resins, poly(hydroxyamide), poly(hydroxyphenylene) ether, poly Naphthol.

Among these, phenol resins are preferred in terms of low cost and small volume shrinkage during hardening, and novolac-type phenol resins are particularly preferred.

Phenol resin is the condensation product of phenol or its derivatives and aldehydes. Polycondensation is carried out in the presence of catalysts such as acid or alkali. The phenol resin obtained when an acid catalyst is used is specifically called a novolak type phenol resin.

Examples of phenol derivatives include: phenol, cresol, ethylphenol, propylphenol, butylphenol, amylphenol, benzylphenol, adamantanephenol, benzyloxyphenol, xylenol, phthalate Phenol, resorcinol, ethylresorcinol, hexylresorcinol, hydroquinone, pyrogallol, phloroglucinol, 1,2,4-trihydroxybenzene, rose acid, hydroquinone Phenol, bisphenol A, bisphenol AF, bisphenol B, bisphenol F, bisphenol S, dihydroxydiphenylmethane, 1,1-bis(4-hydroxyphenyl)cyclohexane, 1,4-bis (3-Hydroxyphenoxybenzene), 2,2-bis(4-hydroxy-3-methylphenyl)propane, α,α'-bis(4-hydroxyphenyl)-1,4-diisopropane Benzene, 9,9-bis(4-hydroxy-3-methylphenyl)benzene, 2,2-bis(3-cyclohexyl-4-hydroxyphenyl)propane, 2,2-bis(2-hydroxyl) -5-biphenyl)propane, dihydroxybenzoic acid, etc.

Examples of aldehyde compounds include formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, pivaldehyde, butyraldehyde, valeraldehyde, hexanal, trioxane, glyoxal, cyclohexanal, diphenyl acetaldehyde, Ethyl butyraldehyde, benzaldehyde, glyoxylic acid, 5-norphenyl-2-carbaldehyde, malondialdehyde, succinic aldehyde, glutaraldehyde, salicylic acid, naphthalene formaldehyde, terephthalaldehyde, etc.

The component (A) preferably contains (a) a phenol resin that does not have an unsaturated hydrocarbon group and (b) a modified phenol resin that has an unsaturated hydrocarbon group. The above-mentioned component (b) is more preferably modified by the reaction between a phenolic hydroxyl group and a polybasic acid anhydride.

In addition, as component (b), from the viewpoint of further improving the mechanical properties (elongation at break, elastic modulus and residual stress), it is preferable to use a compound modified with an unsaturated hydrocarbon group having a carbon number of 4 to 100. Phenolic resin.

(b) Modified phenolic resins with unsaturated hydrocarbon groups are usually phenols or derivatives thereof and compounds with unsaturated hydrocarbon groups (preferably those with 4 to 100 carbon atoms) (hereinafter, sometimes referred to as "unsaturated hydrocarbon group-containing compounds"). Compound") (hereinafter referred to as "unsaturated hydrocarbon group modified phenol derivatives") and aldehydes, or the reaction product of phenol resin and unsaturated hydrocarbon group-containing compounds.

The phenol derivative used here can be the same as the phenol derivative described above regarding the raw material of the phenol resin as the component (A).

From the viewpoint of the adhesion and thermal shock resistance of the photoresist pattern, the unsaturated hydrocarbon group of the unsaturated hydrocarbon group-containing compound preferably contains two or more unsaturated groups. Moreover, from the viewpoint of compatibility when preparing a resin composition and flexibility of a cured film, the unsaturated hydrocarbon group-containing compound is preferably one having 8 to 80 carbon atoms, more preferably one having 10 to 60 carbon atoms.

Examples of compounds containing unsaturated hydrocarbon groups include: unsaturated hydrocarbons with 4 to 100 carbon atoms, polybutadiene having carboxyl groups, epoxidized polybutadiene, linolenic alcohol, oleyl alcohol, unsaturated fatty acids, and unsaturated fatty acids. ester. Preferable unsaturated fatty acids include: crotonic acid, myristic acid, palmitoleic acid, oleic acid, elaidic acid, vaccenic acid, codoleic acid, erucic acid, tetracosenoic acid, and linseed oil. acid, alpha-linolenic acid, eleostearic acid, stearidonic acid, arachidonic acid, eicosapentaenoic acid, herring acid and docosahexaenoic acid. Among these, esters of unsaturated fatty acids with 8 to 30 carbon atoms and mono- to trihydric alcohols with 1 to 10 carbon atoms are particularly preferred, and esters of unsaturated fatty acids with 8 to 30 carbon atoms and trihydric alcohols are particularly preferred. Ester of glycerol.

Esters of unsaturated fatty acids with 8 to 30 carbon atoms and glycerol are commercially available as vegetable oils. Vegetable oils include non-drying oils with an iodine value of less than 100, semi-drying oils with an iodine value of more than 100 but less than 130, or drying oils with an iodine value of more than 130. Examples of non-drying oils include olive oil, morning glory seed oil, polygonum multiflorum seed oil, camellia oil, camellia oil, castor oil, and peanut oil. Examples of semi-drying oils include corn oil, cottonseed oil and sesame oil. Examples of the drying oil include tung oil, linseed oil, soybean oil, walnut oil, safflower oil, sunflower oil, perilla oil, and mustard oil. Moreover, processed vegetable oil obtained by processing these vegetable oils can be used.

Among the above-mentioned vegetable oils, in the reaction between phenol or its derivatives or phenolic resin and vegetable oil, it is preferable to use a non-drying oil from the viewpoint of preventing gelation accompanying excessive reaction and improving yield. On the other hand, from the viewpoint of improving the adhesion, mechanical properties and thermal shock resistance of the photoresist pattern, it is preferable to use dry oil. Among dry oils, tung oil, linseed oil, soybean oil, walnut oil, and safflower oil are preferred, and tung oil and linseed oil are more preferred in terms of exhibiting the effects of the present invention more effectively and reliably.

These unsaturated hydrocarbon group-containing compounds may be used singly or in combination of two or more.

When preparing component (b), first, the above-mentioned phenol derivative and the above-mentioned unsaturated hydrocarbon group-containing compound are reacted to prepare an unsaturated hydrocarbon group-modified phenol derivative. The above reaction is preferably carried out at 50 to 130°C. Regarding the reaction ratio between the phenol derivative and the unsaturated hydrocarbon group-containing compound, from the viewpoint of improving the flexibility of the cured film (photoresist pattern), the unsaturated hydrocarbon group-containing compound is preferred relative to 100 parts by mass of the phenol derivative. The amount is 1 to 100 parts by mass, and more preferably 5 to 50 parts by mass. If the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the heat resistance of the cured film tends to decrease. In the above reaction, p-toluenesulfonic acid, trifluoromethanesulfonic acid, etc. can be used as a catalyst if necessary.

By polycondensing the unsaturated hydrocarbon group-modified phenol derivative produced by the above reaction and aldehydes, a phenol resin modified with an unsaturated hydrocarbon group-containing compound is produced. The aldehydes described above as aldehydes used to obtain the phenol resin can be used.

The reaction between the above-mentioned aldehydes and the above-mentioned unsaturated hydrocarbon-modified phenol derivative is a condensation polymerization reaction, and previously known synthesis conditions of phenol resin can be used. The reaction is preferably carried out in the presence of a catalyst such as acid or alkali, and more preferably an acid catalyst is used. Examples of the acid catalyst include hydrochloric acid, sulfuric acid, formic acid, acetic acid, p-toluenesulfonic acid, and oxalic acid. One type of these acid catalysts may be used alone or two or more types may be used in combination.

The above reaction is usually preferably carried out at a reaction temperature of 100 to 120°C. In addition, the reaction time varies depending on the type or amount of catalyst used, but is usually 1 to 50 hours. After the reaction is completed, the reaction product is dehydrated under reduced pressure at a temperature below 200°C, thereby obtaining a phenol resin modified by a compound containing an unsaturated hydrocarbon group. Furthermore, solvents such as toluene, xylene, and methanol can be used in the reaction.

The phenol resin modified by a compound containing an unsaturated hydrocarbon group can also be obtained by polycondensing the above-mentioned unsaturated hydrocarbon group-modified phenol derivative with aldehydes together with compounds other than phenol such as m-xylene. In this case, the molar ratio of the compound other than phenol to the compound obtained by reacting a phenol derivative and an unsaturated hydrocarbon group-containing compound is preferably less than 0.5.

The component (b) can also be obtained by reacting the phenol resin of the component (a) above with an unsaturated hydrocarbon group-containing compound.

The unsaturated hydrocarbon group-containing compound that reacts with the phenol resin can be the same as the above-mentioned unsaturated hydrocarbon group-containing compound.

The reaction between phenolic resin and compounds containing unsaturated hydrocarbon groups is usually preferably carried out at 50 to 130°C. Furthermore, regarding the reaction ratio between the phenol resin and the unsaturated hydrocarbon group-containing compound, from the viewpoint of improving the flexibility of the cured film (photoresist pattern), the unsaturated hydrocarbon group-containing compound is preferred relative to 100 parts by mass of the phenol resin. It is 1-100 parts by mass, more preferably 2-70 parts by mass, and still more preferably 5-50 parts by mass. If the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film will tend to decrease, and if it exceeds 100 parts by mass, the possibility of gelation during the reaction will tend to increase, and the cured film will Tendency to decrease heat resistance. At this time, p-toluenesulfonic acid, trifluoromethanesulfonic acid, etc. can be used as a catalyst if necessary. Furthermore, solvents such as toluene, xylene, methanol, and tetrahydrofuran can be used in the reaction.

Furthermore, the polybasic acid anhydride is reacted with the remaining phenolic hydroxyl group in the phenolic resin modified with the unsaturated hydrocarbon group-containing compound produced by the above method. Thereby, acid-modified phenol resin can also be used as (b) component. By performing acid modification with a polybasic acid anhydride and introducing carboxyl groups, the solubility of component (b) in an alkaline aqueous solution (developer) is further improved.

The polybasic acid anhydride is not particularly limited as long as it has an acid anhydride group formed by dehydration condensation of carboxyl groups of a polybasic acid having a plurality of carboxyl groups. Examples of polybasic acid anhydrides include phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, Hydrophthalic anhydride, methyl tetrahydro phthalic anhydride, methyl hexahydro phthalic anhydride, tetrahydrophthalic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methyl tetrahydrophthalic anhydride Dibasic acid anhydrides such as methylene tetrahydrophthalic anhydride, tetrabromophthalic anhydride and trimellitic anhydride, biphenyl tetracarboxylic dianhydride, naphthalene tetracarboxylic dianhydride, diphenyl ether tetracarboxylic dianhydride Anhydride, butane tetracarboxylic dianhydride, cyclopentane tetracarboxylic dianhydride, pyromellitic acid dianhydride and benzophenone tetracarboxylic dianhydride and other aromatic tetracarboxylic acid dianhydrides. These may be used individually by 1 type or in combination of 2 or more types. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably at least one selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride and hexahydrophthalic anhydride. In this case, there is an advantage that a photoresist pattern with a better shape can be formed.

Furthermore, (A) the alkali-soluble resin having a phenolic hydroxyl group may contain a phenol resin acid-modified by reacting a polybasic acid anhydride. By making component (A) contain a phenol resin acid-modified with a polybasic acid anhydride, the solubility of component (A) in an alkaline aqueous solution (developer) is further improved.

Examples of the polybasic acid anhydride include phthalic anhydride, succinic anhydride, octenylsuccinic anhydride, pentadecenylsuccinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, Hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, tetrahydropthalic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methyl Endomethylene tetrahydrophthalic anhydride, tetrabromophthalic anhydride, trimellitic anhydride and other dianhydrides, biphenyl tetracarboxylic dianhydride, naphthalene tetracarboxylic dianhydride, diphenyl ether tetracarboxylic acid Aliphatic and aromatic tetracarboxylic acid dianhydrides such as dianhydride, butane tetracarboxylic acid dianhydride, cyclopentane tetracarboxylic acid dianhydride, pyromellitic acid dianhydride, benzophenone tetracarboxylic acid dianhydride, etc. These may be used individually by 1 type or in combination of 2 or more types. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and for example, more preferably one or more types selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride and hexahydrophthalic anhydride.

(B2) Photoacid generator Examples of the photoacid generator include naphthoquinone diazonium compounds, aryl diazonium salts, diaryl ionium salts, triarylsulfonium salts, and the like. Among them, the azonaphthoquinone compound is preferred because of its high sensitivity.

As thermal cross-linking accelerators, for example, epoxy compounds, oxybutane compounds, tetrazoline compounds, aldehydes, aldehyde modified compounds, isocyanate compounds, unsaturated bond-containing compounds, polyol compounds, polyol compounds, etc. can be preferably used. Amine compounds, melamine compounds, metal chelating agents, C-hydroxymethyl compounds, N-hydroxymethyl compounds, etc.

(D)Solvent There are no particular limitations as long as the solvent can dissolve or disperse each component.

(E)Others It can contain thermal cross-linking agents, sensitizers, adhesion assistants, dyes, surfactants, dissolution accelerators, cross-linking accelerators, etc. Among them, by containing a thermal cross-linking agent, when the photosensitive resin film after the pattern formation is heated and cured, the thermal cross-linking agent component reacts with the component (A) to form a cross-linked structure. Thereby, it can be hardened at a low temperature, and embrittlement or melting of the film can be prevented. As the thermal crosslinking agent component, specifically, a compound having a phenolic hydroxyl group, a compound having a hydroxymethylamine group, or a compound having an epoxy group can be preferably used.

(Develop) After exposing the polymer with phenolic hydroxyl groups, the unnecessary parts are rinsed with a developer. The developer used is not particularly limited. For example, sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide can be preferably used. (TMAH) and other alkaline aqueous solutions.

(heat hardening) After development, polymers having phenolic hydroxyl groups are thermally cross-linked by heating. The cross-linked polymer becomes a hardened relief pattern, that is, the interlayer insulating film 6 .

The heating temperature is not particularly limited, but from the viewpoint of the influence on other members, the heating temperature is preferably lower. The temperature is preferably below 250 degrees, more preferably below 230 degrees, more preferably below 200 degrees, and particularly preferably below 180 degrees.

(Method for manufacturing semiconductor device) The manufacturing method of the semiconductor device of this embodiment is demonstrated using FIG. 3. In FIG. 3A, the wafer 10 is prepared after completing the previous steps. Furthermore, in FIG. 3B , the wafer 10 after completing the previous steps is cut to form a plurality of semiconductor wafers 2 . The semiconductor chip 2 may also be a purchased item. The semiconductor wafer 2 thus prepared is attached to the support 11 at a predetermined distance as shown in FIG. 3C .

Then, the molding resin 12 is applied over the semiconductor wafer 2 to the support 11 , and mold sealing is performed as shown in FIG. 3D . Next, the support 11 is peeled off, and the mold resin 12 is turned over (see FIG. 3E ). As shown in FIG. 3E , the semiconductor chip 2 and the molding resin 12 are substantially on the same plane. Next, in the step shown in FIG. 3F , the photosensitive resin composition 13 is coated on the semiconductor wafer 2 and the molding resin 12 . At this time, the photosensitive resin composition 13 is preferably adjusted with a filler. Then, the applied photosensitive resin composition 13 is exposed and developed to form a relief pattern (relief pattern forming step). In addition, the photosensitive resin composition 13 may be either a positive type or a negative type. Furthermore, the relief pattern is heated to form a hardened relief pattern (interlayer insulating film forming step). Furthermore, wiring is formed in the portion where the hardened relief pattern is not formed (wiring forming step).

Furthermore, in this embodiment, the above-described relief pattern forming step, interlayer insulating film forming step and wiring forming step are combined into a rewiring layer forming step of forming a rewiring layer connected to the semiconductor chip 2 .

The interlayer insulating film in the rewiring layer may be multiple layers. Therefore, the rewiring layer forming step may include a plurality of relief pattern forming steps, a plurality of interlayer insulating film forming steps, and a plurality of wiring forming steps.

Furthermore, in FIG. 3G , a plurality of external connection terminals 7 corresponding to each semiconductor wafer 2 are formed (bump formation), and each semiconductor wafer 2 is diced. Thereby, as shown in FIG. 3H, a semiconductor device (semiconductor IC) 1 can be obtained. In this embodiment, a plurality of fan-out semiconductor devices 1 can be obtained through the manufacturing method shown in FIG. 3 .

In this embodiment, the weight reduction rate of the hardened relief pattern (interlayer insulating film) formed through the above steps can be 5 to 95% by weight. In another aspect of this embodiment, when the hardened relief pattern (interlayer insulating film) formed through the above steps is maintained at 100°C for 60 minutes, the volatile gas per 1 cm ² can be 0.2×10 ^-6 to 2.5 ×10 ^-6 Pa. In another aspect of this embodiment, when the hardened relief pattern (interlayer insulating film) formed through the above steps is maintained at 100°C for 60 minutes, the volatile gas per 1 cm ² can be 0.4×10 ^-6 to 1.8 ×10 ^-6 Pa.

In this embodiment, in the interlayer insulating film forming step, it is preferable to use a photosensitive resin composition capable of forming at least one compound of polyimide, polybenzoethazole, and a polymer having a phenolic hydroxyl group. Interlayer insulation film. [Example]

Hereinafter, Examples performed to clarify the effects of the present invention will be described. In the examples, the following materials and measurement methods were used.

Hereinafter, Examples performed to clarify the effects of the present invention will be described.

(Polymer A-1: Synthesis of polyimide precursor) 4,4'-oxydiphthalic dianhydride (ODPA) as tetracarboxylic dianhydride was added to a 2 liter capacity separable flask. Furthermore, 2-hydroxyethyl methacrylate (HEMA) and γ-butyrolactone were added and stirred at room temperature. Pyridine was added with stirring to obtain a reaction mixture. After the heat generated by the reaction was completed, the mixture was cooled to room temperature and left to stand for 16 hours.

Next, a solution of dicyclohexylcarbodiimide (DCC) dissolved in γ-butyrolactone was added to the reaction mixture over 40 minutes while stirring in an ice bath. Next, 4,4'-diaminodiphenyl ether (DADPE) as a diamine was added over 60 minutes while stirring to suspend γ-butyrolactone. Furthermore, after stirring at room temperature for 2 hours, ethanol was added and stirred for 1 hour, and then γ-butyrolactone was added. By filtering, the precipitate generated in the reaction mixture is removed to obtain a reaction liquid.

The obtained reaction liquid was added to ethanol to generate a precipitate containing a crude polymer. The resulting crude polymer was separated by filtration and dissolved in tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was added dropwise to water to precipitate the polymer. The obtained precipitate was separated by filtration and then vacuum dried to obtain a powdery polymer (polyimide precursor (polymer A-1)). The mass of the compound used in Component A-1 is shown in Table 1 below.

(Synthesis of Polymer A-2) Except that the tetracarboxylic dianhydride and the diamine were changed as shown in Table 1 below, the reaction was carried out in the same manner as the method described in the above-mentioned polymer A-1 to obtain a polyimide precursor (polymer A-2). .

(Polymer B-1: Synthesis of polybenzoethazole precursor) To a 0.5-liter flask equipped with a stirrer and a thermometer, 15.48 g of 4,4'-diphenyl ether dicarboxylic acid as a dicarboxylic acid and N-methylpyrrolidone were added. After the flask was cooled to 5°C, thionyl chloride was added dropwise and allowed to react for 30 minutes to obtain a solution of dimethyl chloride. Next, N-methylpyrrolidone was added to a 0.5-liter flask equipped with a stirrer and a thermometer. After stirring and dissolving 18.30 g of bis(3-amino-4-hydroxyphenyl)hexafluoropropane and 2.18 g of m-aminophenol, pyridine was added. And, while maintaining the temperature at 0 to 5°C, a solution of dimethyl chloride was added dropwise over 30 minutes, and then stirring was continued for 30 minutes. The solution was poured into 3 liters of water, and the precipitate was recovered, washed three times with pure water, and dried under reduced pressure to obtain a polymer (polybenzoconazole precursor (polymer B-1)). The mass of the compound used in polymer B-1 is shown in Table 1 below.

(Synthesis of Polymer B-2) Except that the dicarboxylic acid was changed as shown in Table 1 below, the reaction was carried out in the same manner as described in the above-mentioned polymer B-1 to obtain a polybenzoconazole precursor (polymer B-2).

(Polymer C-1: Synthesis of phenolic resin) A phenol resin containing 85 g of the C1 resin shown below and 15 g of the C2 resin shown below was prepared as polymer C-1. C1: Cresol novolac resin (cresol/formaldehyde novolak resin, m-cresol/p-cresol (molar ratio) = 60/40, polystyrene-converted weight average molecular weight = 12,000, manufactured by Asahi Organic Materials Industry Co., Ltd., Product name "EP4020G")

C2: C2 is synthesized as follows. <C2: Synthesis of phenol resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms> Mix 100 parts by mass of phenol, 43 parts by mass of linseed oil, and 0.1 parts by mass of triflate, and stir at 120° C. for 2 hours to obtain a vegetable oil-modified phenol derivative (a). Next, 130 g of vegetable oil-modified phenol derivative (a), 16.3 g of paraformaldehyde, and 1.0 g of oxalic acid were mixed, and stirred at 90° C. for 3 hours. Then, the temperature was raised to 120°C, and after stirring under reduced pressure for 3 hours, 29 g of succinic anhydride and 0.3 g of triethylamine were added to the reaction solution, and the mixture was stirred at 100°C for 1 hour under atmospheric pressure. The reaction liquid was cooled to room temperature, and a phenol resin (hereinafter referred to as "C2 resin") modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms (acid value: 120 mgKOH/g) was obtained as the reaction product.

(Synthesis of Polymer C-2) Prepare 100 g of the following C1 resin as polymer C-2.

[Table 1] polymer Tetracarboxylic dianhydride (A) Mass of A (g) Diamine(B) Mass of B (g) Polyimide precursor Polymer A-1 4,4'-Oxydiphthalic dianhydride (ODPA) 147.11 4,4'-Diaminodiphenyl ether (DADPE) 92.9 Polymer A-2 4,4'-Oxydiphthalic dianhydride (ODPA) 147.11 2,2'-bisdimethyl-4,4'-diaminobiphenyl (m-TB) 98.5 polymer Dicarboxylic acid(C) Mass of C(g) Diaminophenol(D) Mass of D(g) Polybenzoethazole precursor Polymer B-1 4,4'-Diphenyletherdicarboxylic acid 15.48 2,2-bis(3-amino-4-hydroxyphenyl)-hexafluoropropane 18.3 Polymer B-2 sebacic acid 12.13 2,2-bis(3-amino-4-hydroxyphenyl)-hexafluoropropane 18.3 polymer Cresol novolak resin (E) Mass of E(g) Modified phenol resin (F) Mass of F (g) Phenolic resin Polymer C-1 C1 resin 85 C2 resin 15 Polymer C-2 C1 resin 100 C2 resin 0

[Examples 1 to 7, Comparative Examples 1 to 2] The solution was prepared as shown in Table 2 below to obtain a solution of the photosensitive resin composition.

That is, the photosensitive resin compositions of Examples 1 to 7 and Comparative Examples 1 to 2 were prepared using the compounds described in Table 2 below and in the amounts described in Table 3 below. Furthermore, the units in Table 3 are parts by mass.

The prepared photosensitive resin composition was subjected to (1) weight loss rate measurement in an air environment, and (2) adhesion test to a sealing material. Also, (3) evaluate the electrical characteristics of the antenna-type module after it is produced. The results of each test are shown in Table 3 below.

(1)Measurement of weight reduction rate The photosensitive resin composition prepared in the Examples and Comparative Examples was used to produce a fan-out type wafer-level chip size package type semiconductor device. Remove the 10 μm thick interlayer insulating film from the self-made semiconductor device as completely as possible. About 10 mg of the taken-out interlayer insulating film was placed in a platinum pan, and the weight loss rate was measured after the temperature was raised to 700°C at an air flow rate of 50 ml/min and a heating rate of 10°C/min.

(2) Adhesion test with sealing material R4000 series manufactured by Nagase chemteX Company was prepared as the epoxy sealing material. Then, the sealing material is spin-coated on the aluminum sputtered silicon wafer to a thickness of about 150 microns, and is thermally cured at 130° C. to harden the epoxy sealing material. The photosensitive resin composition prepared in Examples and Comparative Examples was applied on the above-mentioned epoxy-based cured film so that the final film thickness became 10 micrometers. After the entire surface of the applied photosensitive resin composition was exposed under the exposure conditions of 200 mJ/cm ² in Examples 1 to 5 and 500 mJ/cm ² in Examples 6 and 7 and Comparative Examples 1 and 2. , thermally hardened at 230°C for 2 hours to produce a first layer of cured film with a thickness of 10 microns.

The photosensitive resin composition used for forming the cured film of the first layer is coated on the cured film of the first layer, and the entire surface is exposed under the same conditions as when the cured film of the first layer is produced. Heat hardening to produce a second layer of cured film with a thickness of 10 microns.

Using a mesh belt continuous calcining furnace (manufactured by Koyo Thermo Systems, model name 6841-20AMC-36), under simulated reflow conditions and in a nitrogen environment, the test piece after the second layer of cured film is formed is heated to The peak temperature is 260℃. The so-called simulated reflow conditions refer to a form in which the melting point of the solder is determined based on the reflow conditions described in Section 7.6 of IPC/JEDEC J-STD-020A, a standard specification of the U.S. semiconductor industry group related to the evaluation method of semiconductor devices. Assuming a high temperature of 220°C for normalization.

Pins were set vertically on the photosensitive resin cured films of the samples produced above before and after resoldering, and a pull tester (SEBASTIAN 5 type, manufactured by Quad Group) was used to conduct an adhesion test. Evaluation: Adhesion strength 70 MPa or more・・・Adhesion strength◎ 50 MPa or more - less than 70 MPa・・・Adhesive force○ 30 MPa or more - less than 50 MPa・・・Adhesive force△ Less than 30 MPa・・・Tight contact force×

(3) Evaluation of antenna-integrated modules (electrical characteristics) The photosensitive resin composition prepared in the Examples and Comparative Examples was used to prepare an antenna-integrated module that integrates a fan-out type wafer-level chip size packaging type semiconductor device and an antenna. The photosensitive resin composition prepared in the Examples and Comparative Examples is used as an interlayer insulating film of a semiconductor device. In addition, the photosensitive resin composition prepared in the Examples and Comparative Examples is also used as an insulating member between the antenna and ground (reference potential). The thickness of the insulating member affects the radiation rate of the antenna, so it is set to a thickness that can obtain the maximum radiation effect.

In addition, the antenna-integrated module is designed to operate at 300 GHz.

To evaluate the reflection characteristics (electrical characteristics), the deviation from 300 GHz of the antenna alone is less than 5 GHz as ○, the deviation from 5 GHz to less than 10 GHz is △, and the deviation from 10 GHz or more is regarded as ×. In addition, those who see ripples are marked as ×, and those who do not see ripples are marked as ○. Furthermore, the so-called reflection characteristics here refer to the ratio of the electric power reflected by the antenna and returned to the input port relative to the input power to the input port for inputting electric power to the antenna.

[Table 2] photoinitiator D-1 photoacid generator D-2 Cross-linking agent E-1 filler F-1 Silica filler (manufactured by Admatechs, particle size 100 nm) Solvent G-1 γ-butyrolactone G-2 DMSO G-3 Propylene glycol monomethyl ether acetate G-4 Ethyl lactate

[table 3] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Comparative example 1 Comparative example 2 polymer A-1 100 100 A-2 100 B-1 100 B-2 100 B-3 C-1 100 100 100 C-2 100 photoinitiator D-1 2 2 2 photoacid generator D-2 10 10 15 15 15 15 Cross-linking agent E-1 15 15 15 15 filler F-1 200 300 200 200 200 200 200 1 3000 Solvent G-1 160 160 160 225 225 G-2 40 40 40 G-3 25 25 G-4 120 120 hardening temperature 230℃ 230℃ 230℃ 230℃ 230℃ 230℃ 230℃ 230℃ 230℃ Weight reduction rate 33% 25% 33% 35% 35% 39% 39% 99% 4% Adhesion (before reflow soldering) ◎ ◎ 〇 〇 〇 △ △ △ × Adhesion (after reflow soldering) 〇 ◎ 〇 △ △ △ △ × × Electrical properties △ 〇 △ △ △ △ △ × △ ripples 〇 〇 〇 〇 〇 〇 〇 △ ×

[Examples 8 to 14, Comparative Example 3] The solution was prepared as shown in Table 4 below to obtain a solution of the photosensitive resin composition.

That is, the photosensitive resin compositions of Examples 8 to 14 and Comparative Example 3 were prepared using the compounds described in Table 4 below and in the amounts described in Table 5 below. Furthermore, the units in Table 5 are parts by mass.

The prepared photosensitive resin composition was subjected to (1) measurement of volatile gas when maintained at 100° C. for 60 minutes, and (2) adhesion test to an inorganic film. Also, (3) evaluate the electrical characteristics of the antenna-type module after it is produced. The results of each test are shown in Table 5 below.

(1) Measurement of volatile gases when kept at 100° C. for 60 minutes. Using the photosensitive resin composition prepared in the Examples and Comparative Examples, a fan-out type wafer-level chip-size packaged semiconductor device was produced. Remove the 10 μm thick interlayer insulating film from the self-made semiconductor device as completely as possible. The taken-out interlayer insulating film was cut into a size of 1 cm ² and measured using a temperature rise desorption measuring device (EMD-WA1000S manufactured by Electronic Science Co., Ltd.). After raising the temperature to 100°C at a heating rate of 10°C/min, the pressure after maintaining the temperature at 100°C for 60 minutes is used as the volatile gas pressure.

(2) Adhesion test with inorganic film The photosensitive resin composition produced in Examples and Comparative Examples was applied on a silicon wafer so that the final film thickness became 10 μm. After the entire surface of the applied photosensitive resin composition was exposed under the exposure conditions of 200 mJ/cm ² in Examples 8 to 12 and 500 mJ/cm ² in Examples 13, 14 and Comparative Example 3, Heat harden at 230°C for 2 hours to produce a cured film with a thickness of 10 microns.

Using a sputtering device (L-440S-FHL manufactured by CANON ANELVA), a titanium layer of 2000 Å was sputtered on the obtained cured film, and then a copper layer of 4000 Å was sputtered.

A pin was set upright on the photosensitive resin cured film of the sample produced above, and an adhesion test was conducted using a pull-out tester (SEBASTIAN 5 model, manufactured by Quad Group). Evaluation: Adhesion strength 70 MPa or more・・・Adhesion strength◎ 50 MPa or more - less than 70 MPa・・・Adhesive force○ 30 MPa or more - less than 50 MPa・・・Adhesive force△ Less than 30 MPa・・・Tight contact force ×

(3) Evaluation of antenna-integrated modules (electrical characteristics) The photosensitive resin composition prepared in the Examples and Comparative Examples was used to prepare an antenna-integrated module that integrates a fan-out type wafer-level chip size packaging type semiconductor device and an antenna. The photosensitive resin composition prepared in the Examples and Comparative Examples is used as an interlayer insulating film of a semiconductor device. In addition, the photosensitive resin composition prepared in the Examples and Comparative Examples is also used as an insulating member between the antenna and the ground (reference potential). The thickness of the insulating member affects the radiation rate of the antenna, so it is set to a thickness that can obtain the maximum radiation effect.

In addition, the antenna-integrated module is designed to operate at 300 GHz.

To evaluate the reflection characteristics (electrical characteristics), the deviation from 300 GHz of the antenna alone is less than 5 GHz as ○, the deviation from 5 GHz to less than 10 GHz is △, and the deviation from 10 GHz or more is regarded as ×. Furthermore, the so-called reflection characteristics here refer to the ratio of the electric power reflected by the antenna and returned to the input port relative to the input power to the input port for inputting electric power to the antenna.

[Table 4] photoinitiator D-1 photoacid generator D-2 Cross-linking agent E-1 Thermal cross-linking agent, volatilization regulator H-1 dipentaerythritol tetraacrylate H-2 Triglycidyl isocyanurate H-3 Polyethylene glycol 900 Solvent G-1 γ-butyrolactone G-2 DMSO G-3 Propylene glycol monomethyl ether acetate G-4 Ethyl lactate

[table 5] Example 8 Example 9 Example 10 Example 11 Example 12 Example 13 Example 14 Comparative example 3 polymer A-1 100 100 A-2 100 B-1 100 B-2 100 B-3 C-1 100 100 C-2 100 photoinitiator D-1 2 2 2 photoacid generator D-2 10 10 15 15 15 Cross-linking agent E-1 15 15 15 Thermal cross-linking agent, volatilization regulator H-1 10 10 10 H-2 10 10 5 5 H-3 15 Solvent G-1 160 160 160 225 225 G-2 40 40 40 G-3 25 25 G-4 120 120 120 hardening temperature 230℃ 230℃ 230℃ 230℃ 230℃ 230℃ 230℃ 230℃ Volatile gas pressure (Pa) 0.8× ^10-6 0.7× ^10-6 0.8× ^10-6 1× ^10-6 1.2× ^10-6 1.4× ^10-6 1.4× ^10-6 3× ^10-6 Tightness ◎ ◎ 〇 〇 〇 △ △ × Electrical properties △ 〇 △ △ △ △ △ ×

When the photosensitive resin compositions described in Examples 1 to 14 are used to produce fan-out type wafer-level chip-size packaged semiconductor devices containing epoxy resin in the molding resin, they can operate without any problem. [Industrial availability]

The present invention can be preferably applied to a semiconductor device having a semiconductor chip and a rewiring layer connected to the semiconductor chip, especially a fan-out type wafer-level chip size packaging type semiconductor device.

1:Semiconductor device 2:Semiconductor wafer 2a:Terminal 3:Sealing material 4:Rewiring layer 5: Wiring 6: Interlayer insulation film 7:External connection terminal 10:wafer 11:Support 12:Molding resin 13: Photosensitive resin composition 21: Solder ball 22:Solder bumps 23:Sealing resin 24: Intermediary layer

FIG. 1 is a schematic cross-sectional view of the semiconductor device of this embodiment. FIG. 2 is a schematic plan view of the semiconductor device of this embodiment. 3A to 3H show an example of the manufacturing steps of the semiconductor device according to this embodiment. Figure 4 is a comparison diagram between flip-chip BGA (Ball Grid Array) and fan-out (Fan-Out) WLCSP.

1:Semiconductor device

2:Semiconductor wafer

2a:Terminal

3:Sealing material

4:Rewiring layer

5: Wiring

6: Interlayer insulation film

7:External connection terminal

Claims (37)

A semiconductor device, characterized in that it includes a semiconductor wafer, a sealing material, and a rewiring layer having an area larger than that of the semiconductor wafer in plan view, the sealing material having a portion directly in contact with the interlayer insulating film of the rewiring layer, and the above When the interlayer insulating film of the rewiring layer is kept at 100°C for 60 minutes, the volatile gas is 0.2×10 ^-6 ~ 2.5×10 ^-6 Pa per 1 cm ² . A semiconductor device, characterized in that it includes a semiconductor wafer, a sealing material, and a rewiring layer having an area larger than that of the semiconductor wafer in plan view, the sealing material having a portion directly in contact with the interlayer insulating film of the rewiring layer, and the above When the interlayer insulating film of the rewiring layer is kept at 100°C for 60 minutes, the volatile gas is 0.4×10 ^-6 ~ 1.8×10 ^-6 Pa per 1 cm ² . The semiconductor device of claim 1 or 2, wherein the sealing material contains epoxy resin. The semiconductor device of claim 1 or 2, wherein the interlayer insulating film contains polyimide, polybenzo

At least one of azoles and polymers with phenolic hydroxyl groups. The semiconductor device of claim 4, wherein the interlayer insulating film contains polyimide having a structure of the following general formula (1);

(In the general formula (1), X ¹ is a tetravalent organic group, Y ¹ is a divalent organic group, and m is an integer of 1 or more). The semiconductor device of Claim 5, wherein X ¹ in the above general formula (1) is a 4-valent organic group containing an aromatic ring, and Y ¹ in the above general formula (1) is a 2-valent organic group containing an aromatic ring. . The semiconductor device of claim 5, wherein X ¹ in the above general formula (1) contains at least one structure represented by the following general formula (2) to general formula (4);

[Chemical 4]

(In the general formula (4), R ₉ is an oxygen atom, a sulfur atom or a divalent organic group). The semiconductor device of claim 7, wherein X ¹ in the above general formula (1) contains a structure represented by the following general formula (5);

The semiconductor device of claim 5, wherein Y ¹ in the above general formula (1) contains at least one structure represented by the following general formulas (6) to (8);

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are a hydrogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and may be the same or different) [Chemical 7]

(R ₁₄ ~ R ₂₁ are hydrogen atoms, halogen atoms, monovalent organic groups with 1 to 5 carbon atoms, or hydroxyl groups, and may be different from each other or the same)

(R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, a monovalent aliphatic group having 1 to 5 carbon atoms, or a hydroxyl group, and they may be the same or different). The semiconductor device of claim 9, wherein Y ¹ in the above general formula (1) contains a structure represented by the following general formula (9);

The semiconductor device of claim 4, wherein the polybenzo

Azoles contain polybenzoyl compounds having the structure of the following general formula (10)

Azole; [Chemical 10]

(In the general formula (10), Y ² and Y ³ are divalent organic groups). A semiconductor device according to claim 11, wherein Y ² in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms. A semiconductor device according to claim 12, wherein Y ² in the general formula (10) is a chain alkylene group having 1 to 8 carbon atoms and some or all of the hydrogen atoms are substituted with fluorine atoms. The semiconductor device according to claim 11, wherein Y ³ in the general formula (10) is a divalent organic group containing an aromatic group. The semiconductor device of claim 14, wherein Y ³ of the above general formula (10) contains at least one structure represented by the following general formulas (6) to (8);

(R ₁₀ , R ₁₁ , R ₁₂ and R ₁₃ are hydrogen atoms and monovalent aliphatic groups with 1 to 5 carbon atoms, and may be the same or different)

(R ₁₄ ~ R ₂₁ are hydrogen atoms, halogen atoms, and monovalent organic groups with 1 to 5 carbon atoms. They can be different from each other or the same)

(R ₂₂ is a divalent group, and R ₂₃ to R ₃₀ are a hydrogen atom, a halogen atom, and a monovalent aliphatic group having 1 to 5 carbon atoms, which may be the same or different). The semiconductor device of claim 15, wherein Y ³ of the above general formula (10) contains a structure represented by the following general formula (9);

A semiconductor device according to claim 11, wherein Y ³ in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms. The semiconductor device of claim 17, wherein Y ³ in the general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms. The semiconductor device according to claim 4, wherein the polymer having a phenolic hydroxyl group contains a novolak type phenol resin. The semiconductor device of claim 4, wherein the polymer having a phenolic hydroxyl group contains a phenol resin that does not have an unsaturated hydrocarbon group and a modified phenol resin that has an unsaturated hydrocarbon group. The semiconductor device according to claim 1 or 2, wherein the rewiring layer includes a first interlayer insulating film layer, a second interlayer insulating film layer, and the first interlayer insulating film when viewed in cross section The intermediate layer is different from the second interlayer insulating film layer and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer. The semiconductor device of Claim 21, wherein the first interlayer insulating film layer is in contact with the sealing material, and the volatile gas generated when the first interlayer insulating film layer is maintained at 100°C for 60 minutes is 0.4×10 per 1 cm ^{2 -6} ~1.8×10 ^-6 Pa. The semiconductor device of claim 21, wherein the second interlayer insulating film layer has a composition different from that of the first interlayer insulating film layer. The semiconductor device of claim 21, wherein the second interlayer insulating film layer is maintained at 100°C. The volatile gas when maintained for 60 minutes is different from the volatile gas when the first interlayer insulating film layer is maintained at 100°C for 60 minutes. The semiconductor device of claim 1 or 2, wherein the semiconductor device is a fan-out type wafer level chip size package type semiconductor device. The semiconductor device of Claim 1 or 2, wherein the volatile gas generated when the interlayer insulating film of the rewiring layer is maintained at 100°C for 60 minutes is 0.6×10 ^-6 ~ 1.8×10 ^-6 Pa per 1 cm ² . The semiconductor device of claim 26, wherein the volatile gas when the interlayer insulating film of the rewiring layer is maintained at 100°C for 60 minutes is 0.6×10 ^-6 ~ 1.6×10 ^-6 Pa per 1 cm ² . The semiconductor device of Claim 26, wherein the volatile gas when the interlayer insulating film of the rewiring layer is maintained at 100°C for 60 minutes is 0.6×10 ^-6 ~ 1.4×10 ^-6 Pa per 1 cm ² . The semiconductor device of claim 1 or 2, wherein the interlayer insulating film contains a thermal cross-linking agent. The semiconductor device according to claim 1 or 2, wherein the interlayer insulating film contains a volatilization regulator. The semiconductor device of claim 1 or 2, wherein the interlayer insulating film contains a thermal cross-linking agent and a volatilization regulator. The semiconductor device according to claim 1 or 2, wherein the rewiring layer includes an inorganic film in contact with the interlayer insulating film. The semiconductor device according to claim 32, wherein the inorganic film has a reaction layer in which volatile gas contained in the interlayer insulating film reacts with components of the inorganic film. A method for manufacturing a semiconductor device, characterized by comprising: the steps of preparing a semiconductor wafer; forming a rewiring layer having an area larger than the semiconductor wafer in plan view and containing an interlayer insulating film; and directly connecting the interlayer insulating film to the rewiring layer. The step of applying the sealing material in a contact manner, and the volatile gas when the above-mentioned interlayer insulating film is kept at 100°C for 60 minutes is 0.4×10 ^-6 ~ 1.8×10 ^-6 Pa per 1 cm ² . The manufacturing method of a semiconductor device according to claim 34, which includes the following steps of forming an interlayer insulating film: using polyimide or polybenzoyl which can form

A photosensitive resin composition containing at least one compound of an azole or a polymer having a phenolic hydroxyl group forms the interlayer insulating film. The manufacturing method of a semiconductor device according to claim 35, wherein the step of forming the interlayer insulating film includes the following steps: using the volatile gas generated when the interlayer insulating film is maintained at 100°C for 60 minutes to become 0.4×10 ^-6 ~ 1.8×10 ^- The above-mentioned photosensitive resin composition adjusted to ⁶ Pa forms the above-mentioned interlayer insulating film. As claimed in Claim 36, the method for manufacturing a semiconductor device, wherein the step of forming the interlayer insulating film includes the following steps: using the volatile gas generated when the interlayer insulating film is maintained at 100°C for 60 minutes to become 0.4×10 ^-6 ~ 1.8×10 ^- The above-mentioned photosensitive resin composition adjusted by a thermal cross-linking agent and/or a volatilization regulator in a manner of ⁶ Pa forms the above-mentioned interlayer insulating film.