TW201939638A - Substrate processing apparatus capable of accurately measuring exhaust pressure in an exhaust pipe even for a gas containing a sublimate - Google Patents
Substrate processing apparatus capable of accurately measuring exhaust pressure in an exhaust pipe even for a gas containing a sublimate Download PDFInfo
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- TW201939638A TW201939638A TW108101760A TW108101760A TW201939638A TW 201939638 A TW201939638 A TW 201939638A TW 108101760 A TW108101760 A TW 108101760A TW 108101760 A TW108101760 A TW 108101760A TW 201939638 A TW201939638 A TW 201939638A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
Description
本發明係關於一種基板處理裝置，對半導體晶圓、液晶顯示器用基板、電漿顯示器用基板、有機EL(Electroluminescence，電致發光)用基板、FED(Field Emission Display，場致發射顯示器)用基板、光顯示器用基板、磁碟用基板、磁光碟用基板、光罩用基板、太陽電池用基板等各種基板(以下，簡稱為基板)進行熱處理。The present invention relates to a substrate processing apparatus for semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for organic EL (Electroluminescence), and substrates for FED (Field Emission Display) , Various substrates (hereinafter, simply referred to as substrates) such as substrates for optical displays, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, and substrates for solar cells (hereinafter, simply referred to as substrates).
以往，作為此種裝置，存在如下裝置，其具備：熱處理板，其對所載置之基板進行加熱；罩蓋部件，其包圍熱處理板之上部，以相對於熱處理板能夠升降之方式構成，形成由熱處理板所致之熱處理環境；殼體，其包圍熱處理板與罩蓋部件；頂板，其設置於罩蓋部件之頂面與熱處理板之上表面之間；以及位置調整部件，其調整頂板之下表面與熱處理板之上表面之間隔(例如，參照專利文獻1)。Conventionally, as such a device, there is a device including a heat treatment plate that heats a substrate placed thereon, and a cover member that surrounds the upper portion of the heat treatment plate and is configured to be capable of being raised and lowered relative to the heat treatment plate and formed. A heat treatment environment caused by the heat treatment plate; a housing surrounding the heat treatment plate and the cover member; a top plate provided between the top surface of the cover member and the upper surface of the heat treatment plate; and a position adjustment member that adjusts the top plate The distance between the lower surface and the upper surface of the heat-treated plate (for example, refer to Patent Document 1).
於此種基板處理裝置中，將殼體內之氣體排出。具體來說，具備自殼體內將氣體排氣之排氣管、以及檢測排氣管內之壓力之壓力感測器，基於藉由壓力感測器測定出之壓力進行排氣控制。壓力感測器係經由設置於排氣管之取樣埠來測定壓力。具體來說，將取樣管之一端側安裝於連通至排氣管內之開口部，且於另一端側安裝壓力感測器。於自排氣管中之氣體之流通方向觀察開口部之情形時，形成於排氣管之開口部成為開口部露出之狀態。
[背景技術文獻]
[專利文獻]In such a substrate processing apparatus, the gas in the casing is exhausted. Specifically, it includes an exhaust pipe that exhausts gas from the case, and a pressure sensor that detects the pressure in the exhaust pipe, and performs exhaust control based on the pressure measured by the pressure sensor. The pressure sensor measures the pressure through a sampling port provided in the exhaust pipe. Specifically, one end side of the sampling tube is mounted on an opening portion communicating with the inside of the exhaust pipe, and a pressure sensor is mounted on the other end side. When the opening portion is viewed from the flow direction of the gas in the exhaust pipe, the opening portion formed in the exhaust pipe is in a state where the opening portion is exposed.
[Background Literature]
[Patent Literature]
[專利文獻1]
日本專利特開2000-3843號公報[Patent Document 1]
Japanese Patent Laid-Open No. 2000-3843
[發明所欲解決之問題][Problems to be solved by the invention]
然而，於具有此種構成之以往例之情形時，存在如下之問題。
亦即，最近以來，存在為了微細加工製程而形成被稱為塗佈碳膜之基底膜之情形。該基底膜之產生係利用高溫之熱處理進行，此時自基底膜產生包含昇華物之氣體。於如以往之裝置般構成之基板處理裝置中，由於昇華物附著於開口部之周圍，並以封閉開口部之方式昇華物逐漸堆積下去，因此妨礙到壓力之檢測。因此，存在無法正確地測定排氣管內之排氣壓力之問題。However, in the case of the conventional example having such a configuration, there are the following problems.
That is, recently, a base film called a coated carbon film may be formed for a microfabrication process. The generation of the base film is performed by a high-temperature heat treatment, and at this time, a gas including a sublimate is generated from the base film. In a substrate processing apparatus configured like a conventional apparatus, since the sublimated matter adheres to the periphery of the opening, and the sublimated matter gradually accumulates so as to close the opening, the detection of the pressure is hindered. Therefore, there is a problem that the exhaust pressure in the exhaust pipe cannot be accurately measured.
本發明係鑒於此種情形而完成者，其目的在於提供一種即便為包含昇華物之氣體亦能夠正確地測定排氣管內之排氣壓力之基板處理裝置。
[解決問題之技術手段]The present invention was made in view of such a situation, and an object thereof is to provide a substrate processing apparatus capable of accurately measuring an exhaust pressure in an exhaust pipe even if it is a gas containing a sublimate.
[Technical means to solve the problem]
本發明為了達成此種目的，採用如下構成。
亦即，請求項1中記載之發明為一種基板處理裝置，其係對基板進行熱處理者，且其特徵在於具備：熱處理板，其載置基板，且將基板加熱；殼體，其覆蓋上述熱處理板之上方，且形成由熱處理板所致之熱處理環境；排氣管，其將上述殼體內之氣體排氣；排氣管開口部，其形成於上述排氣管，且連通至上述排氣管之內部；取樣埠，其設置於上述排氣管開口部，且用來檢測上述排氣管內之排氣壓力；以及壓力感測器，其經由上述取樣埠測定排氣壓力；且上述取樣埠具備：開口部，其於上述排氣管開口部連通至上述排氣管之內部；以及整流板，其以於自上述排氣管中之氣體之流通方向與上述開口部之中心軸之延長線之交點觀察上述開口部之情形時，觀察不到上述開口部之方式覆蓋上述開口部，並且以於與上述排氣管中之氣體之流通方向及上述開口部之中心軸之兩者正交之方向、上述排氣管之氣體之流通方向上之較上述開口部靠下游側之至少一者上述開口部連通至上述排氣管之內部之方式設置。In order to achieve such an object, the present invention adopts the following configuration.
That is, the invention described in claim 1 is a substrate processing apparatus, which is a substrate heat treatment device, and is characterized in that it includes: a heat treatment plate that mounts the substrate and heats the substrate; and a case that covers the heat treatment. Above the plate, and forms a heat treatment environment caused by the heat treatment plate; an exhaust pipe, which exhausts the gas in the above casing; an exhaust pipe opening, which is formed in the exhaust pipe and communicates with the exhaust pipe Inside; a sampling port that is provided at the opening of the exhaust pipe and is used to detect the exhaust pressure in the exhaust pipe; and a pressure sensor that measures the exhaust pressure through the sampling port; and the sampling port It is provided with an opening part which communicates with the inside of the exhaust pipe at the opening part of the exhaust pipe, and a rectifying plate with an extension line extending in the direction of the gas flow from the exhaust pipe and the central axis of the opening part. When the situation of the opening is observed at the intersection, the opening is covered in such a way that the opening is not visible, and in the direction of the flow of gas with the exhaust pipe and in the opening At least one of the two orthogonal directions of the mandrel and the gas flow direction of the exhaust pipe is provided on the downstream side of the opening from the opening to the inside of the exhaust pipe.
[作用、效果]根據請求項1中記載之發明，取樣埠設置於用來將來自覆蓋熱處理板之上部之殼體之氣體排氣之排氣管之排氣管開口部，排氣管內之排氣壓力藉由經由取樣埠安裝之壓力感測器來測定。該取樣埠具備整流板，該整流板以於自排氣管中之氣體之流通方向與開口部之中心軸之延長線之交點觀察開口部之情形時，觀察不到開口部之方式覆蓋開口部。該整流板進而以於與排氣管中之氣體之流通方向及開口部之中心軸之兩者正交之方向、排氣管之氣體之流通方向上之較開口部靠下游側之至少一者開口部連通至排氣管之內部之方式設置，因此能夠利用壓力感測器來測定排氣壓力。因此，氣體中所含之昇華物雖然於整流板之上游側附著並堆積，但能夠抑制於開口部堆積而將開口部封閉。其結果，即便為包含昇華物之氣體，亦能夠正確地測定排氣管內之排氣壓力。[Functions and Effects] According to the invention described in claim 1, the sampling port is provided in an exhaust pipe opening portion of an exhaust pipe for exhausting gas from a casing covering the upper part of the heat treatment plate, and The exhaust pressure is measured by a pressure sensor installed through the sampling port. The sampling port is provided with a rectifier plate, which covers the opening portion when the opening portion is observed at the intersection of the flow direction of the gas in the exhaust pipe and the extension line of the central axis of the opening portion. . The rectifying plate is further at least one of a direction orthogonal to both the flow direction of the gas in the exhaust pipe and the central axis of the opening, and the flow direction of the gas in the exhaust pipe at least one downstream side than the opening. Since the opening portion is provided so as to communicate with the inside of the exhaust pipe, the exhaust pressure can be measured using a pressure sensor. Therefore, although the sublimate contained in the gas adheres and accumulates on the upstream side of the rectifying plate, it is possible to suppress the accumulation in the opening and close the opening. As a result, it is possible to accurately measure the exhaust pressure in the exhaust pipe even if it is a gas containing a sublimate.
又，於本發明中，較佳為，上述整流板具有傾斜面，該傾斜面於自與上述排氣管中之氣體之流通方向及上述開口部之中心軸之兩者正交之方向觀察之情形時，自上述排氣管之上游側朝向下游側距上述開口部之距離慢慢變大(請求項2)。Further, in the present invention, it is preferable that the rectifying plate has an inclined surface which is viewed from a direction orthogonal to both a flow direction of the gas in the exhaust pipe and a central axis of the opening. In this case, the distance from the upstream side to the downstream side of the exhaust pipe gradually increases from the opening (request 2).
於與開口部對向之配管內，配置著具有自上游側朝向下游側距開口部之距離慢慢變大之傾斜面之整流板，因此排氣中所含之昇華物主要於該傾斜面附著並堆積。又，於與氣體之流通方向正交之方向或氣體之流通方向之下游側開口部連通至排氣管，因此壓量感測器能夠經由取樣埠正確地測定排氣壓力。A rectifying plate having an inclined surface whose distance from the opening gradually increases from the upstream side toward the downstream side is arranged in the pipe opposite the opening. Therefore, the sublimates contained in the exhaust gas are mainly attached to the inclined surface. And stacked. In addition, the opening is communicated with the exhaust pipe in a direction orthogonal to the gas flow direction or downstream of the gas flow direction, so the pressure sensor can accurately measure the exhaust pressure through the sampling port.
又，於本發明中，較佳為，上述整流板自與上述排氣管中之氣體之流通方向及上述開口部之中心軸之兩者正交之方向觀察之截面呈三角形狀，且其頂點以其內角側與上述開口部對向地安裝(請求項3)。Further, in the present invention, it is preferable that a cross section of the rectifying plate viewed from a direction orthogonal to both a gas flow direction in the exhaust pipe and a central axis of the opening portion has a triangular shape, and a vertex thereof The inner corner side is mounted so as to face the opening (request item 3).
於與開口部對向之排氣管內，整流板以三角屋頂之方式配置，且成為其傾斜面面向氣體之流通方向之姿勢。因此，排氣中所含之昇華物主要於面向其上下游之傾斜面附著並堆積。又，由於在與氣體之流通方向及開口部之中心軸之兩者正交之方向開口部連通至排氣管，因此壓力感測器能夠經由取樣埠正確地測定排氣壓力。In the exhaust pipe opposite to the opening, the fairing plate is arranged in the form of a triangular roof, and the posture is such that its inclined surface faces the flow direction of the gas. Therefore, the sublimation contained in the exhaust gas mainly adheres to and accumulates on the inclined surface facing the upstream and downstream. In addition, since the opening is communicated to the exhaust pipe in a direction orthogonal to both the flow direction of the gas and the central axis of the opening, the pressure sensor can accurately measure the exhaust pressure through the sampling port.
又，於本發明中，較佳為，具備：塊體，其形成著上述開口部；以及安裝件，其以上述開口部面向上述排氣管開口部之方式，將上述塊體裝卸自如地安裝於上述排氣管；上述整流板安裝於上述塊體之上述排氣管開口部側(請求項4)。Further, in the present invention, it is preferable to include: a block formed with the above-mentioned opening portion; and a mounting member configured to detachably mount the block so that the opening portion faces the opening of the exhaust pipe. To the exhaust pipe; the rectifying plate is mounted on the exhaust pipe opening side of the block (request item 4).
當將安裝件卸除時，能夠自排氣管卸除塊體，因此即便昇華物附著於開口部亦能夠藉由維護容易地去除。因此，藉由實施定期性之維護，能夠長期間維持排氣壓力之精度。When the attachment is removed, the block can be removed from the exhaust pipe, and therefore, even if the sublimation is attached to the opening, it can be easily removed by maintenance. Therefore, by performing regular maintenance, the accuracy of the exhaust pressure can be maintained for a long period of time.
又，於本發明中，較佳為，上述塊體於上述開口部之相反面，形成著連通至上述開口部之測定管安裝部，並且具備：測定管，其以一端側配置於上述塊體之上述測定管安裝部，於另一端側配置著上述壓力感測器；以及測定管安裝件，其將上述測定管之一端側裝卸自如地安裝於上述測定管安裝部(請求項5)。Further, in the present invention, it is preferable that the block is formed on the opposite side of the opening with a measuring tube mounting portion communicating with the opening, and further includes a measuring tube disposed on the block with one end side. In the measuring tube mounting portion, the pressure sensor is disposed on the other end side; and a measuring tube mounting member that detachably attaches one end side of the measuring tube to the measuring tube mounting portion (request item 5).
當將測定管安裝件卸除時，能夠將測定管自塊體卸除，因此即便昇華物附著於測定管之內部亦能夠藉由維護容易地去除。因此，藉由實施定期性之維護，能夠長期間維持排氣壓力之精度。
[發明之效果]When the measuring tube attachment is removed, the measuring tube can be removed from the block, and therefore, even if the sublimate is attached to the inside of the measuring tube, it can be easily removed by maintenance. Therefore, by performing regular maintenance, the accuracy of the exhaust pressure can be maintained for a long period of time.
[Effect of the invention]
根據本發明之基板處理裝置，取樣埠設置於將來自覆蓋熱處理板之上部之殼體之氣體排氣之排氣管之排氣管開口部，排氣管內之排氣壓力藉由經由取樣埠安裝之壓力感測器來測定。該取樣埠具備整流板，該整流板以於自排氣管中之氣體之流通方向與開口部之中心軸之延長線之交點觀察開口部之情形時，觀察不到開口部之方式覆蓋開口部。該整流板進而以於與排氣管中之氣體之流通方向及開口部之中心軸之兩者正交之方向、排氣管之氣體之流通方向上之較開口部靠下游側之至少一者開口部連通至排氣管之內部之方式設置，因此能夠利用壓力感測器測定排氣壓力。因此，氣體中所含之昇華物雖然於整流板之上游側附著並堆積，但能夠抑制於開口部堆積而將開口部封閉。其結果，即便為包含昇華物之氣體，亦能夠正確地測定排氣管內之排氣壓力。According to the substrate processing apparatus of the present invention, the sampling port is provided in an exhaust pipe opening portion of an exhaust pipe that exhausts gas from a casing covering the upper part of the heat treatment plate, and the exhaust pressure in the exhaust pipe passes through the sampling port. Installed pressure sensor for measurement. The sampling port is provided with a rectifier plate, which covers the opening portion when the opening portion is observed at the intersection of the flow direction of the gas in the exhaust pipe and the extension line of the central axis of the opening portion. . The rectifying plate is further at least one of a direction orthogonal to both the flow direction of the gas in the exhaust pipe and the central axis of the opening, and the flow direction of the gas in the exhaust pipe at least one downstream side than the opening. Since the opening portion is provided so as to communicate with the inside of the exhaust pipe, the exhaust pressure can be measured using a pressure sensor. Therefore, although the sublimate contained in the gas adheres and accumulates on the upstream side of the rectifying plate, it is possible to suppress the accumulation in the opening and close the opening. As a result, it is possible to accurately measure the exhaust pressure in the exhaust pipe even if it is a gas containing a sublimate.
以下，參照附圖對本發明之一實施例進行說明。Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
圖1係表示實施例之基板處理裝置之整體構成之概略構成圖，圖2係可動頂板之俯視圖，圖3係表示升降銷之前端部附近之縱剖視圖。FIG. 1 is a schematic configuration diagram showing the overall configuration of a substrate processing apparatus according to an embodiment, FIG. 2 is a plan view of a movable top plate, and FIG. 3 is a vertical cross-sectional view near an end portion before a lift pin.
實施例之基板處理裝置1係對基板W實施熱處理之裝置。具體來說，為了微細加工製程，例如進行形成被稱為塗佈碳膜之基底膜時之熱處理。為了產生該基底膜，而以300～500℃左右之高溫進行熱處理。The substrate processing apparatus 1 of the embodiment is an apparatus that performs heat treatment on the substrate W. Specifically, for the microfabrication process, for example, a heat treatment for forming a base film called a coated carbon film is performed. In order to generate this base film, heat treatment is performed at a high temperature of about 300 to 500 ° C.
基板處理裝置1具備下部底板3、水冷式底板5、熱處理板7、可動頂板單元9、升降銷單元11、殼體13、以及擋板單元15。The substrate processing apparatus 1 includes a lower bottom plate 3, a water-cooled bottom plate 5, a heat treatment plate 7, a movable top plate unit 9, a lift pin unit 11, a case 13, and a baffle unit 15.
該基板處理裝置1自相鄰地配置之搬送臂17搬入基板W，實施熱處理之後，將處理完畢之基板W利用搬送臂17搬出。This substrate processing apparatus 1 carries in the substrate W from the transfer arms 17 disposed adjacently, and after performing the heat treatment, the processed substrate W is carried out by the transfer arms 17.
下部底板3於上表面豎立設置有支柱19，於該支柱19之上部配置著水冷式底板5。水冷式底板5抑制熱處理板7之熱向下方傳遞。具體來說，水冷式底板5例如於內部遍及整體形成有能夠流通冷媒之冷媒流路21。於該冷媒流路21中，例如作為冷媒流通冷卻水。該冷卻水例如溫度被調整為20℃。The lower bottom plate 3 is provided with a pillar 19 standing on the upper surface, and a water-cooled bottom plate 5 is arranged above the pillar 19. The water-cooled bottom plate 5 suppresses the heat of the heat treatment plate 7 from being transmitted downward. Specifically, for example, the water-cooled bottom plate 5 is formed with a refrigerant flow path 21 through which the refrigerant can flow throughout the entire interior. In the refrigerant flow path 21, for example, cooling water flows as a refrigerant. The temperature of the cooling water is adjusted to, for example, 20 ° C.
熱處理板7俯視呈圓形狀。其直徑較基板W之直徑稍微大。熱處理板7內置著未圖示之加熱器等加熱器件，例如，以表面溫度成為400℃之方式進行加熱。熱處理板7藉由設置於其下表面與水冷式底板5之上表面之間之支柱23，以自水冷式底板5向上方離開之狀態配置。熱處理板7於與俯視下正三角形之各頂點對應之位置形成著貫通口25。The heat treatment plate 7 has a circular shape in plan view. Its diameter is slightly larger than the diameter of the substrate W. The heat treatment plate 7 includes a heating device such as a heater (not shown), and is heated such that the surface temperature becomes 400 ° C, for example. The heat-treating plate 7 is arranged in a state separated upward from the water-cooled bottom plate 5 by a pillar 23 provided between the lower surface and the upper surface of the water-cooled bottom plate 5. The heat treatment plate 7 has a through hole 25 formed at a position corresponding to each vertex of the regular triangle in a plan view.
於熱處理板7附設著可動頂板單元9。可動頂板單元9具備升降底板27、升降機構29、支柱31、以及可動頂板33。A movable top plate unit 9 is attached to the heat treatment plate 7. The movable top plate unit 9 includes a lifting bottom plate 27, a lifting mechanism 29, a pillar 31, and a movable top plate 33.
升降底板27具備避免與支柱23或下述之升降銷41之干涉之開口。升降機構29例如由氣缸構成。升降機構29以使具有作動軸之部分朝向上方之姿勢密接安裝於水冷式底板5。該升降機構29能夠將作動軸之前端部之高度固定於任意位置。升降機構29之作動軸連結於升降底板27之底面。若使升降機構29之作動軸升降，則能夠改變升降底板27之高度位置。升降底板27於其上表面，例如豎立設置著4根支柱31。於4根支柱31之上端安裝著可動頂板33。The elevating bottom plate 27 is provided with an opening to prevent interference with the pillar 23 or an elevating pin 41 described below. The elevating mechanism 29 is constituted by, for example, an air cylinder. The elevating mechanism 29 is closely attached to the water-cooled bottom plate 5 in such a manner that a portion having an operating shaft faces upward. The lifting mechanism 29 can fix the height of the front end portion of the operating shaft at an arbitrary position. The operating shaft of the elevating mechanism 29 is connected to the bottom surface of the elevating bottom plate 27. When the operating shaft of the elevating mechanism 29 is raised and lowered, the height position of the elevating bottom plate 27 can be changed. On the upper surface of the elevating bottom plate 27, for example, four pillars 31 are erected. A movable top plate 33 is mounted on the upper ends of the four pillars 31.
如圖2所示，可動頂板33俯視下於中央部形成著開口35。開口35俯視下形成得較基板W之直徑小。該可動頂板33藉由升降機構29作動，與升降底板27一起升降。可動頂板33之升降位置移動及於對基板W進行熱處理時之下降位置、與將基板W搬入時之上升位置。再者，下降位置較佳基板W之上表面與可動頂板33之下表面之距離為約10 mm。其原因在於，藉由發明者等之實驗得知，為了提高基板W之表面上之溫度分佈之面內均勻性，較佳該距離。As shown in FIG. 2, the movable top plate 33 has an opening 35 formed in a central portion in a plan view. The opening 35 is formed smaller than the diameter of the substrate W in a plan view. The movable top plate 33 is moved together with the lifting bottom plate 27 by the lifting mechanism 29. The lifting position of the movable top plate 33 moves, the lowering position when the substrate W is heat-treated, and the rising position when the substrate W is carried in. Furthermore, the distance between the upper surface of the substrate W and the lower surface of the movable top plate 33 is preferably about 10 mm. The reason is that the distance is preferred in order to improve the in-plane uniformity of the temperature distribution on the surface of the substrate W through experiments by the inventors and the like.
可動頂板33呈其對角長度形成得較熱處理板7之直徑長之矩形狀。4根支柱31為各自之上端連結於可動頂板33之下表面中之四角。可動頂板33之四角處於遠離作為熱源之俯視圓形狀之熱處理板7之位置。因此，即便藉由熱處理板7之輻射熱將可動頂板33加熱，亦可使熱不易傳遞至支柱31。因此，升降機構29不易受到熱之影響，能夠抑制故障之發生。The movable top plate 33 has a rectangular shape whose diagonal length is longer than the diameter of the heat-treated plate 7. The four pillars 31 are four corners connected at their upper ends to the lower surface of the movable top plate 33. The four corners of the movable top plate 33 are located away from the heat treatment plate 7 having a circular shape in plan view as a heat source. Therefore, even if the movable top plate 33 is heated by the radiant heat of the heat treatment plate 7, it is difficult to transfer the heat to the pillar 31. Therefore, the lifting mechanism 29 is not easily affected by heat, and it is possible to suppress the occurrence of a failure.
上述可動頂板33較佳為包括陶瓷或金屬與陶瓷之合金。由此，即便進行高溫之熱處理，亦能夠防止因熱所致之變形。The movable top plate 33 is preferably made of ceramic or an alloy of metal and ceramic. Accordingly, even if a high-temperature heat treatment is performed, deformation due to heat can be prevented.
升降銷單元11具備驅動機構37、升降環39、以及3根升降銷41。再者，升降銷41因圖示之關係僅描繪2根。The lift pin unit 11 includes a drive mechanism 37, a lift ring 39, and three lift pins 41. In addition, only two lift pins 41 are drawn due to the relationship in the figure.
驅動機構37例如由氣缸構成。驅動機構37以使具有其作動軸之部分朝向下方，且使相反側密接於水冷式底板5之下表面之狀態安裝。於作動軸之下部，連結著升降環39。於升降環39之上表面，豎立設置著3根升降銷41。驅動機構39能夠將其作動軸之高度位置調節及於3根升降銷41自熱處理板7之上表面向上方突出之交接位置(圖1中之二點鏈線)、與3根升降銷41自熱處理板7之上表面向下方沒入之處理位置(圖1中之實線)之兩個部位。3根升降銷41插通於形成於熱處理板7之3個部位之貫通口25。The driving mechanism 37 is configured by, for example, an air cylinder. The driving mechanism 37 is mounted in a state in which a portion having an operating shaft thereof faces downward, and the opposite side is in close contact with the lower surface of the water-cooled bottom plate 5. A lower ring 39 is connected to the lower portion of the operating shaft. Three lifting pins 41 are erected on the upper surface of the lifting ring 39. The driving mechanism 39 can adjust the height position of its actuating shaft and at the transfer position where the three lifting pins 41 protrude upward from the upper surface of the heat treatment plate 7 (two-point chain line in FIG. 1), and the three lifting pins 41 The heat treatment plate 7 has two parts at the treatment position (solid line in FIG. 1) where the upper surface of the heat treatment plate 7 is lowered downward. The three lifting pins 41 are inserted through the through-holes 25 formed at three locations of the heat treatment plate 7.
升降銷41較佳為以圖3所示之方式構成。升降銷41具備芯部41a、外筒41b、以及石英球41c。芯部41a為處於主體部41d之上部之前端部41e形成得較主體部41d直徑小。外筒41b為前端部以外形成為較石英球41c之外徑稍微大之內徑。外筒41b之前端部形成為較石英球41c之直徑小之內徑。石英球41c為其直徑形成得較前端部41e稍微小。因此，於將石英球41c載置於前端部41e之上表面之狀態下，若蓋上外筒41b，則成為石英球41c之1/3左右自外筒41b突出之狀態。於該狀態下，藉由將卡合銷41g壓入至貫通芯部41d與外筒41b之貫通口41f，而將外筒41b與石英球41c一起固定於芯部41a而構成升降銷41。再者，石英球41c以外之部件為金屬製。The lift pin 41 is preferably configured as shown in FIG. 3. The lift pin 41 includes a core portion 41a, an outer cylinder 41b, and a quartz ball 41c. The core portion 41a is formed at a front end portion 41e above the main body portion 41d and has a smaller diameter than the main body portion 41d. The outer cylinder 41b has an inner diameter that is slightly larger than the outer diameter of the quartz ball 41c other than the front end portion. The front end portion of the outer cylinder 41b is formed with an inner diameter smaller than the diameter of the quartz ball 41c. The quartz ball 41c has a diameter slightly smaller than that of the front end portion 41e. Therefore, in a state where the quartz ball 41c is placed on the upper surface of the front end portion 41e, when the outer tube 41b is covered, about one third of the quartz ball 41c protrudes from the outer tube 41b. In this state, the engaging pin 41g is pressed into the through-hole 41f penetrating the core portion 41d and the outer tube 41b, and the outer tube 41b and the quartz ball 41c are fixed to the core portion 41a to constitute the lift pin 41. The components other than the quartz ball 41c are made of metal.
雖然作為可耐高溫環境之材料較佳為石英，但若考慮強度或成本，則使升降銷41之整體為石英製有所困難。因此，如上所述，藉由僅使前端部之石英球41c為石英製則能夠抑制成本。又，石英由於與作為基板W之材料之單晶矽相較高度稍微低，因此損傷基板W之下表面之可能性較低，而且，由於為球狀因此能夠使接觸面積為最小限。Although quartz is preferred as a material capable of withstanding high-temperature environments, it is difficult to make the entire lift pin 41 made of quartz when considering strength or cost. Therefore, as described above, it is possible to suppress the cost by making only the quartz ball 41c of the tip portion made of quartz. In addition, since quartz has a slightly higher phase with the single crystal silicon as the material of the substrate W, the possibility of damaging the lower surface of the substrate W is low, and because of the spherical shape, the contact area can be minimized.
殼體13覆蓋熱處理板7之上方，形成由熱處理板7所致之熱處理環境。殼體13於其一面形成著搬入搬出口43。搬入搬出口43自熱處理板7之上表面附近之高度位置向上開口。搬送臂17經由該搬入搬出口43進行基板W之搬入搬出。The casing 13 covers the heat treatment plate 7 to form a heat treatment environment caused by the heat treatment plate 7. The casing 13 has a carrying-in / outlet port 43 formed on one side thereof. The carry-in / out port 43 opens upward from a height position near the upper surface of the heat treatment plate 7. The transfer arm 17 carries in and out the substrate W through the carry-in / out port 43.
於搬入搬出口43附設著擋板單元15。擋板單元15具備驅動機構45以及擋板本體47。驅動機構45以其作動軸之部分朝向上方之姿勢，將一部分密接安裝於水冷式底板5。於作動軸之上部連結著擋板本體47。若驅動機構45使作動軸伸長，則擋板本體47上升而搬入搬出口43被封閉(圖1所示之實線)，若驅動機構45使作動軸收縮，則擋板本體47下降而搬入搬出口43開放(圖1所示之二點鏈線)。A shutter unit 15 is attached to the loading / unloading port 43. The shutter unit 15 includes a drive mechanism 45 and a shutter body 47. The drive mechanism 45 is closely attached to the water-cooled bottom plate 5 in a posture in which a portion of its driving shaft faces upward. A baffle body 47 is connected to an upper portion of the operating shaft. When the driving mechanism 45 extends the operating shaft, the shutter body 47 rises and the carry-in / outlet port 43 is closed (solid line shown in FIG. 1). When the driving mechanism 45 contracts the operating shaft, the shutter body 47 descends and is carried in. Exit 43 is open (two-dot chain line shown in Figure 1).
殼體13於其頂面形成著排氣口49。排氣口49連通連接於排氣管51。殼體13之排氣口49與熱處理板7之上表面之間隔例如為30 mm左右。排氣管51連通連接於排氣設備52。排氣設備52以能夠藉由來自外部之指示調整排氣流量之方式構成。於排氣管51之一部分配置著壓力檢測單元53。該壓力檢測單元53檢測排氣管51內之排氣壓力。關於壓力檢測單元53之詳細之構成將於下文敍述。The casing 13 has an exhaust port 49 formed on a top surface thereof. The exhaust port 49 is connected to the exhaust pipe 51 in communication. The distance between the exhaust port 49 of the case 13 and the upper surface of the heat treatment plate 7 is, for example, about 30 mm. The exhaust pipe 51 is connected to the exhaust equipment 52 in communication. The exhaust device 52 is configured so that the exhaust flow rate can be adjusted by an instruction from the outside. A pressure detection unit 53 is arranged on a part of the exhaust pipe 51. The pressure detection unit 53 detects an exhaust pressure in the exhaust pipe 51. The detailed configuration of the pressure detection unit 53 will be described later.
殼體13沿著排氣管51之上表面設置著封裝加熱器55。該封裝加熱器55對殼體13或排氣管51進行加熱，於包含昇華物之氣體接觸於殼體13時，防止氣體冷卻而昇華物附著於殼體13之內壁。The casing 13 is provided with a package heater 55 along the upper surface of the exhaust pipe 51. The package heater 55 heats the casing 13 or the exhaust pipe 51, and prevents the gas from cooling and the sublimation from adhering to the inner wall of the casing 13 when the gas containing the sublimated material contacts the casing 13.
控制部61由未圖示之CPU(Central Processing Unit，中央處理單元)或記憶體構成。控制部61進行熱處理板7之溫度控制、可動頂板單元9之升降控制、升降銷單元11之驅動控制、擋板單元15之開閉控制、封裝加熱器55之溫度控制、基於壓力檢測單元53之排氣設備52之排氣控制等。又，控制部61能夠對可動頂板單元9之升降控制中之下降位置根據基板W進行各種操作。例如，對規定每個基板W之處理條件或順序之配方預先規定可動頂板33之下降位置，對未圖示之指示部進行操作，預先對配方指示相當於可動頂板33距基板W之表面之距離之參數。控制部61例如於對基板W進行處理時，參照由裝置操作員指示之與基板W對應之配方，根據該參數對升降機構29進行操作。由此，能夠針對每個基板W調整可動頂板33之下降位置。The control unit 61 is configured by a CPU (Central Processing Unit) or a memory (not shown). The control unit 61 performs temperature control of the heat treatment plate 7, lift control of the movable top plate unit 9, drive control of the lift pin unit 11, opening and closing control of the baffle unit 15, temperature control of the package heater 55, and discharge by the pressure detection unit 53. Exhaust control of the air device 52 and the like. In addition, the control unit 61 can perform various operations on the lowering position in the lifting control of the movable top plate unit 9 according to the substrate W. For example, the lowering position of the movable top plate 33 is specified in advance for the recipe that specifies the processing conditions or order of each substrate W, and an instruction portion (not shown) is operated, and the formula is equivalent to the distance of the movable top plate 33 from the surface of the substrate W Parameters. For example, when the control unit 61 processes the substrate W, it refers to the recipe corresponding to the substrate W instructed by the device operator, and operates the lifting mechanism 29 based on the parameter. Thereby, the lowering position of the movable top plate 33 can be adjusted for each substrate W.
此處，參照圖4～圖6，對壓力檢測單元53之詳細之構成進行說明。再者，圖4係表示壓力檢測單元之縱剖視圖，圖5係自排氣管內部觀察壓力檢測單元之圖，圖6係自排氣管外部觀察壓力檢測單元之圖。Here, a detailed configuration of the pressure detection unit 53 will be described with reference to FIGS. 4 to 6. 4 is a longitudinal sectional view of the pressure detection unit, FIG. 5 is a view of the pressure detection unit viewed from the inside of the exhaust pipe, and FIG. 6 is a view of the pressure detection unit viewed from the outside of the exhaust pipe.
壓力檢測單元53具備取樣埠71、測定管73、以及壓力感測器75。The pressure detection unit 53 includes a sampling port 71, a measurement tube 73, and a pressure sensor 75.
取樣埠71將排氣管51之內部與測定管73以及壓力感測器75連通連接。取樣埠71具體來說以如下方式構成。The sampling port 71 communicates and connects the inside of the exhaust pipe 51 with the measurement pipe 73 and the pressure sensor 75. The sampling port 71 is specifically configured as follows.
取樣埠71形成於排氣管51，且安裝於連通至排氣管51之內部之排氣管開口部77。取樣埠71具備塊體79、開口部81、安裝件83、以及整流板85。The sampling port 71 is formed in the exhaust pipe 51 and is attached to an exhaust pipe opening portion 77 communicating with the inside of the exhaust pipe 51. The sampling port 71 includes a block 79, an opening 81, a mounting member 83, and a rectifying plate 85.
塊體79形成有開口部81。塊體79為外觀呈板狀，且於中央附近形成著開口部81。該開口部81貫通於塊體79之正背面(圖4之左右面)。開口部81形成有圖4中之右側之內徑形成得較左側之內徑稍微大之測定管安裝部87。於塊體79之表面(右側)中之中央附近之上下端，形成著用於安裝件83之凹部89。於凹部89安裝著安裝件83，塊體79以開口部81面向排氣管開口部77之方式，且塊體79以覆蓋排氣管開口部77之方式安裝於排氣管51。安裝件83例如例示六角螺絲。The block 79 is formed with an opening portion 81. The block 79 has a plate-like appearance, and an opening portion 81 is formed near the center. The opening portion 81 penetrates the front and rear surfaces (the left and right surfaces in FIG. 4) of the block 79. The opening portion 81 is formed with a measuring tube mounting portion 87 whose inner diameter on the right side is slightly larger than the inner diameter on the left side in FIG. 4. At the upper and lower ends near the center in the surface (right side) of the block 79, a recessed portion 89 for a mounting member 83 is formed. A mounting member 83 is attached to the recessed portion 89, the block 79 is attached to the exhaust pipe 51 so that the opening 81 faces the exhaust pipe opening 77, and the block 79 is attached to cover the exhaust pipe opening 77. The attachment 83 exemplifies a hex screw.
塊體79自排氣管51中之氣體之流通方向(於圖4～圖6中由箭頭所示)上之開口部81之上游側及於下游側，以橫跨開口部81之方式安裝著整流板85。整流板85以呈如下方式覆蓋開口部81之方式配置，即，於自排氣管51中之氣體之流通方向與開口部81之中心軸之延長線之交點觀察開口部81之情形時，如圖5所示觀察不到開口部81。進而，整流板85以於與排氣管51中之氣體之流通方向及開口部81之中心軸之兩者正交之方向(圖4)，開口部81連通至排氣管51之內部之方式設置。The block 79 is installed on the upstream side and the downstream side of the opening 81 on the flow direction of the gas in the exhaust pipe 51 (indicated by arrows in FIGS. 4 to 6) and on the downstream side. Rectifier board 85. The rectifying plate 85 is arranged so as to cover the opening portion 81 when the opening portion 81 is viewed from the intersection of the flow direction of the gas in the exhaust pipe 51 and the extension line of the central axis of the opening portion 81, such as As shown in FIG. 5, the opening portion 81 is not observed. Further, the rectifying plate 85 is in a direction orthogonal to both the flow direction of the gas in the exhaust pipe 51 and the central axis of the opening 81 (FIG. 4), and the opening 81 communicates with the inside of the exhaust pipe 51. Settings.
更具體來說，自與排氣管51中之氣體之流通方向及開口部81之中心軸之兩者正交之方向(圖4)觀察之截面呈三角形狀。而且，其頂點以將其內角側與開口部81對向地安裝。亦即，整流板85於自氣體自排氣管51中之以開口部81為基準之上游側向下游側流下之軸線上之視點觀察取樣埠71側之情形時觀察不到開口部81。換言之，於自圖4所示之與排氣管51中之氣體之流通方向及開口部81之中心軸之兩者正交之方向觀察之情形時，形成與開口部81連通之連通空間91。該情形時之連通空間91為其縱截面呈三角形狀，於自圖4所示之方向觀察之情形時，直至開口部81之中心軸為止，自氣體之流通方向上之上游側朝向下游側自開口部81到整流板85為止之距離慢慢變大。More specifically, the cross section viewed from a direction orthogonal to both the flow direction of the gas in the exhaust pipe 51 and the central axis of the opening 81 (FIG. 4) has a triangular shape. The apex is mounted so that its inner corner side faces the opening 81. That is, the opening portion 81 is not observed when the rectifying plate 85 observes the sampling port 71 side from the viewpoint of the axis flowing down from the upstream side to the downstream side of the gas from the exhaust pipe 51 with the opening portion 81 as a reference. In other words, when viewed from a direction orthogonal to both the flow direction of the gas in the exhaust pipe 51 and the central axis of the opening portion 81 shown in FIG. 4, a communication space 91 communicating with the opening portion 81 is formed. In this case, the communication space 91 has a triangular shape in the longitudinal section. When viewed from the direction shown in FIG. 4, up to the central axis of the opening 81, the upstream side in the gas flow direction is directed toward the downstream side. The distance from the opening 81 to the fairing plate 85 gradually increases.
塊體79於測定管安裝部87插入有測定管73之一端側。測定管73藉由塊體79中安裝於處於排氣管51之相反側之面之管夾93來固定。管夾93如圖6所示，具備分為兩股之夾片93a、93b、以及形成於它們之間之夾孔93c。藉由將僅螺固於夾片93a、93b之一者之緊固螺絲95擰入而夾片93a、93b相互接近，夾持插入於夾孔93c之測定管73之外周面而將測定管73固定。又，藉由鬆開緊固螺絲95而夾片93a、93b相互離開，將測定管73之外周面自夾孔93c開放，從而可卸除測定管73。One end of the measurement tube 73 is inserted into the block 79 in the measurement tube mounting portion 87. The measuring tube 73 is fixed by a pipe clamp 93 attached to a surface on the opposite side of the exhaust pipe 51 in the block 79. As shown in FIG. 6, the pipe clip 93 includes two clip pieces 93 a and 93 b and a clip hole 93 c formed therebetween. The clamps 93a and 93b are approached to each other by screwing in the fastening screws 95 screwed only to one of the clamps 93a and 93b, and the outer circumference of the measuring tube 73 inserted in the clamp hole 93c is clamped to the measuring tube 73. fixed. In addition, the clamping pieces 93a and 93b are separated from each other by loosening the fastening screw 95, and the outer peripheral surface of the measuring tube 73 is opened from the clamping hole 93c, so that the measuring tube 73 can be removed.
於測定管73之另一端側安裝著壓力感測器75。壓力感測器75經由測定管73、開口部81、以及連通空間91對排氣管51內之氣體之排氣壓力進行測定。藉由壓力感測器75測定出之排氣壓力被賦予給控制部61。A pressure sensor 75 is attached to the other end of the measurement tube 73. The pressure sensor 75 measures the exhaust pressure of the gas in the exhaust pipe 51 via the measurement tube 73, the opening 81, and the communication space 91. The exhaust pressure measured by the pressure sensor 75 is given to the control unit 61.
再者，上述管夾相當於本發明中之「測定管安裝件」。It should be noted that the above-mentioned pipe clamp is equivalent to the "measuring pipe mount" in the present invention.
其次，參照圖7以及圖8，對上述構成之基板處理裝置之基板W之處理進行說明。再者，圖7係表示將基板搬入搬出之狀態之縱剖視圖，圖8係表示對基板進行加熱之狀態之縱剖視圖。Next, processing of the substrate W of the substrate processing apparatus configured as described above will be described with reference to FIGS. 7 and 8. 7 is a longitudinal sectional view showing a state in which the substrate is carried in and out, and FIG. 8 is a longitudinal sectional view showing a state in which the substrate is heated.
首先，如圖7所示，控制部61對可動頂板單元9進行操作，使可動頂板33移動至上升位置。進而，控制部61對升降銷單元11進行操作，使3根升降銷41上升至交接位置。與這些操作一起，控制部61對擋板單元15進行操作，使搬入搬出口43開放。First, as shown in FIG. 7, the control unit 61 operates the movable top plate unit 9 to move the movable top plate 33 to a raised position. Further, the control unit 61 operates the lift pin unit 11 to raise the three lift pins 41 to the delivery position. Along with these operations, the control unit 61 operates the shutter unit 15 to open the loading / unloading port 43.
然後，控制部61使搬送臂17以處於較交接位置高且較上升位置之可動頂板之下表面低之位置之狀態，自搬入搬出口43進入，且於熱處理板7之上方使搬送臂17下降。由此，將基板W交接至處於交接位置之升降銷41。然後，使搬送臂17自搬入搬出口43退出，並且對擋板單元15進行操作，使搬入搬出口43封閉。Then, the control unit 61 moves the transfer arm 17 from the transfer-in exit 43 in a state where the transfer arm 17 is higher than the transfer position and lower than the lower surface of the movable top plate, and lowers the transfer arm 17 above the heat treatment plate 7 . Thereby, the board | substrate W is transferred to the lift pin 41 in a transfer position. Then, the transfer arm 17 is withdrawn from the carry-in / out port 43 and the shutter unit 15 is operated to close the carry-in / out port 43.
繼而，如圖8所示，控制部61對升降銷單元11進行操作，使3根升降銷41下降至處理位置。由此，對基板W進行400℃之加熱處理。控制部61參照配方，於規定之加熱時間進行加熱處理。Then, as shown in FIG. 8, the control unit 61 operates the lift pin unit 11 to lower the three lift pins 41 to the processing position. Thereby, the substrate W is subjected to a heating treatment at 400 ° C. The control unit 61 refers to the recipe and performs heat treatment at a predetermined heating time.
當經過特定之加熱時間時，控制部61對可動頂板單元9以及升降銷單元11進行操作，使可動頂板33上升至上升位置，並且使升降銷41上升至交接位置。繼而，控制部61對擋板單元15進行操作，使搬入搬出口43開放。進而，控制部61使搬送臂17自較交接位置靠下方且較熱處理板7之上表面靠上方之高度進入至搬入搬出口43。然後，藉由使搬送臂17上升至較交接位置高且較可動頂板33之下表面低之位置，而搬送臂17自升降銷41接收處理完畢之基板W。繼而，藉由使搬送臂17自搬入搬出43退出，而使處理完畢之基板W搬出。再者，控制部61於上述處理之期間中，基於利用壓力檢測單元53檢測出之排氣管51內之排氣壓力對排氣設備52進行操作，根據處理狀況將排氣管51內之排氣流量以成為特定之值之方式進行控制。When a specific heating time has elapsed, the control unit 61 operates the movable top plate unit 9 and the lift pin unit 11 to raise the movable top plate 33 to the raised position and raise the lift pin 41 to the transfer position. Then, the control unit 61 operates the shutter unit 15 to open the loading / unloading port 43. Further, the control unit 61 causes the transfer arm 17 to enter the loading / unloading port 43 from a height lower than the delivery position and higher than the upper surface of the heat treatment plate 7. Then, by raising the transfer arm 17 to a position higher than the transfer position and lower than the lower surface of the movable top plate 33, the transfer arm 17 receives the processed substrate W from the lift pin 41. Then, the transfer arm 17 is withdrawn from the carry-in and carry-out 43 to carry out the processed substrate W. In addition, during the above-mentioned processing, the control unit 61 operates the exhaust device 52 based on the exhaust pressure in the exhaust pipe 51 detected by the pressure detection unit 53, and discharges the exhaust in the exhaust pipe 51 according to the processing status. The air flow is controlled so that it becomes a specific value.
藉由上述一系列之動作完成對一片基板W之熱處理，但於對新之基板W進行處理時，控制部61例如可參照由裝置操作員指示之配方，並將可動頂板單元9之可動頂板33之上升位置指示給配方。The heat treatment of one substrate W is completed by the above-mentioned series of operations. However, when processing a new substrate W, the control unit 61 may refer to the recipe instructed by the device operator, for example, and may move the movable top plate 33 of the movable top plate unit 9. The rising position is indicated to the recipe.
根據本實施例，取樣埠71設置於排氣管51之排氣管開口部77，排氣管51內之排氣壓力藉由經由取樣埠71安裝之壓力感測器75來測定。該取樣埠71具備整流板85，該整流板85以於自排氣管51中之氣體之流通方向與開口部81之中心軸之延長線之交點觀察開口部之情形時，觀察不到開口部之方式覆蓋開口部。該整流板85進而以於與排氣管51中之氣體之流通方向及開口部81之中心軸之兩者正交之方向開口部81連通至排氣管51之內部之方式設置，因此能夠利用壓力感測器75測定排氣壓力。因此，氣體中所含之昇華物雖然附著並堆積於整流板85之上游側，但能夠抑制堆積於開口部81而將開口部81封閉。其結果，即便為包含昇華物之氣體，亦能夠正確地測定排氣管51內之排氣壓力。According to this embodiment, the sampling port 71 is provided in the exhaust pipe opening portion 77 of the exhaust pipe 51, and the exhaust pressure in the exhaust pipe 51 is measured by the pressure sensor 75 installed through the sampling port 71. The sampling port 71 is provided with a rectifying plate 85. When the rectifying plate 85 is observed from the intersection of the flow direction of the gas in the exhaust pipe 51 and the extension line of the central axis of the opening 81, the opening is not observed This way covers the opening. The rectifying plate 85 is further provided so that the opening portion 81 communicates with the inside of the exhaust pipe 51 in a direction orthogonal to both the flow direction of the gas in the exhaust pipe 51 and the central axis of the opening portion 81, so it can be used. The pressure sensor 75 measures the exhaust pressure. Therefore, although the sublimate contained in the gas adheres and accumulates on the upstream side of the rectifying plate 85, it is possible to suppress the accumulation on the opening 81 and close the opening 81. As a result, it is possible to accurately measure the exhaust pressure in the exhaust pipe 51 even if it is a gas containing sublimates.
進而，根據本實施例之整流板85，可獲得以下之效果。Furthermore, according to the rectifying plate 85 of this embodiment, the following effects can be obtained.
亦即，於與開口部81對向之排氣管51內，整流板85以三角屋頂之方式配置，且成為其傾斜面面向氣體之流通方向之姿勢。因此，排氣中所含之昇華物主要於面向其上游以及下游之傾斜面附著並堆積。又，由於在與氣體之流通方向及開口部81之中心軸之兩者正交之方向開口部81連通至排氣管51，因此壓力感測器75能夠經由取樣埠71正確地測定排氣壓力。That is, in the exhaust pipe 51 facing the opening 81, the fairing plate 85 is arranged in the shape of a triangular roof, and the posture is such that its inclined surface faces the flow direction of the gas. Therefore, the sublimation contained in the exhaust gas mainly adheres and accumulates on the inclined surfaces facing the upstream and downstream thereof. In addition, since the opening portion 81 communicates with the exhaust pipe 51 in a direction orthogonal to both the flow direction of the gas and the central axis of the opening portion 81, the pressure sensor 75 can accurately measure the exhaust pressure through the sampling port 71 .
又，當將安裝件83卸除時，能夠自排氣管51將塊體79與整流板85一起卸除，因此即便昇華物附著於整流板85或開口部81亦能夠藉由維護容易地去除。因此，藉由實施定期性之維護，能夠長期間維持排氣壓力之精度。進而，當鬆開管夾93時，能夠將測定管73自塊體79卸除，因此即便昇華物附著於測定管73之內部亦能夠藉由維護容易地去除。因此，藉由實施定期性之維護，能夠長期間維持排氣壓力之精度。In addition, when the mounting member 83 is removed, the block 79 can be removed together with the fairing plate 85 from the exhaust pipe 51. Therefore, even if a sublimate is attached to the fairing plate 85 or the opening 81, it can be easily removed by maintenance. . Therefore, by performing regular maintenance, the accuracy of the exhaust pressure can be maintained for a long period of time. Furthermore, when the tube clamp 93 is loosened, the measurement tube 73 can be removed from the block 79, so that even if a sublimate is attached to the inside of the measurement tube 73, it can be easily removed by maintenance. Therefore, by performing regular maintenance, the accuracy of the exhaust pressure can be maintained for a long period of time.
＜第1變化例＞〈First modification〉
此處，參照圖9，對上述整流板85之另一實施例進行說明。再者，圖9係表示整流板之第1變化例之縱剖視圖。Here, another embodiment of the rectifying plate 85 will be described with reference to FIG. 9. FIG. 9 is a longitudinal sectional view showing a first modified example of the rectifier plate.
該整流板85A以於自排氣管51中之氣體之流通方向與開口部81之中心軸之延長線之交點觀察開口部81之情形時，觀察不到開口部81之方式覆蓋開口部81。進而，該整流板85A以不僅於與排氣管51中之氣體之流通方向及開口部81之中心軸之兩者正交之方向，而且亦於排氣管51之氣體之流通方向上之較開口部81靠下游側開口部81連通至排氣管51之內部之方式設置。換言之，整流板85A以傾斜面自排氣管51之壁面朝向排氣管51之中心側慢慢遠離之方式形成。其下游側之端部向較開口部81之下游側之周緣部更靠下游側延伸。此種整流板85A能夠設為較上述整流板85更簡易之構成，而且亦與上述實施例同樣地，能夠抑制昇華物於開口部81堆積而將開口部81封閉。This rectifying plate 85A covers the opening portion 81 so that the opening portion 81 is not visible when the opening portion 81 is observed from the intersection of the gas flowing direction in the exhaust pipe 51 and the extension line of the central axis of the opening portion 81. Furthermore, the rectifying plate 85A is not only in a direction orthogonal to both the flow direction of the gas in the exhaust pipe 51 and the central axis of the opening 81, but also in the flow direction of the gas in the exhaust pipe 51. The opening portion 81 is provided so that the downstream-side opening portion 81 communicates with the inside of the exhaust pipe 51. In other words, the rectifying plate 85A is formed such that the inclined surface is gradually separated from the wall surface of the exhaust pipe 51 toward the center side of the exhaust pipe 51. The end portion on the downstream side extends further downstream than the peripheral edge portion on the downstream side of the opening portion 81. Such a rectifying plate 85A can have a simpler structure than the above-mentioned rectifying plate 85, and similarly to the above-mentioned embodiment, it is possible to suppress the accumulation of sublimates on the opening portion 81 and to close the opening portion 81.
＜第2變化例＞〈Second modification〉
此處，參照圖10，對上述整流板85、85A之另一實施例進行說明。再者，圖10係表示整流板之第2變化例之縱剖視圖。Here, another embodiment of the rectifying plates 85 and 85A will be described with reference to FIG. 10. FIG. 10 is a longitudinal sectional view showing a second modification of the rectifier plate.
該整流板85B以僅於排氣管51之氣體之流通方向上之較開口部81靠下游側開口部81連通至排氣管51之內部之方式設置。該整流板85B形成為僅於排氣之下游側開口之罩狀。此種整流板85B與上述實施例同樣地，能夠抑制昇華物於開口部81堆積而將開口部81封閉。而且，由於傾斜面由側面之板狀部件支撐，因此能夠提高機械性強度。The rectifying plate 85B is provided so as to communicate with the inside of the exhaust pipe 51 on the downstream side of the opening portion 81 from the opening portion 81 only in the gas flow direction of the exhaust pipe 51. The rectifying plate 85B is formed in a cover shape that is opened only on the downstream side of the exhaust gas. Such a rectifying plate 85B can suppress the accumulation of sublimates on the opening portion 81 and close the opening portion 81 similarly to the above-mentioned embodiment. Furthermore, since the inclined surface is supported by a plate-like member on the side, the mechanical strength can be improved.
本發明並不限定於上述實施形態，能夠以下述方式變化實施。The present invention is not limited to the embodiments described above, and can be implemented in various ways as described below.
(1)於上述實施例中，具備可動頂板33，但本發明無須具備該構成。亦即，只要為具備用來將形成熱處理環境之殼體13內之氣體排氣之排氣管51，並檢測其排氣壓力之基板處理裝置則能夠應用本發明。(1) In the above-mentioned embodiment, the movable top plate 33 is provided, but the present invention does not need to have this structure. That is, the present invention can be applied to any substrate processing apparatus having an exhaust pipe 51 for exhausting the gas in the casing 13 forming the heat treatment environment and detecting the exhaust pressure.
(2)於上述實施例中，設為藉由安裝件83來將塊體79裝卸自如地安裝於排氣管51之構成，但本發明並不限定於此種構成。例如，亦可將塊體79與排氣管51利用拉扣(拉鎖)裝卸自如地構成。又，亦可設為將取樣埠71固定地安裝於排氣管51之一部分之構成，且設為使排氣管51之一部分於排氣管51裝卸自如之構成。(2) In the above-mentioned embodiment, the structure in which the block 79 was detachably attached to the exhaust pipe 51 by the attachment 83 was set, but this invention is not limited to such a structure. For example, the block 79 and the exhaust pipe 51 may be configured to be detachably attached by a zipper (zipper). A configuration in which the sampling port 71 is fixedly mounted on a part of the exhaust pipe 51 and a configuration in which a part of the exhaust pipe 51 is detachably mounted on the exhaust pipe 51 may also be adopted.
(3)於上述實施例中，設為利用管夾93使測定管73相對於塊體79裝卸自如之構成。然而，本發明並非必需管夾93。例如，亦可將測定管73以無法卸除之方式安裝於塊體79。(3) In the above embodiment, the configuration is such that the measurement tube 73 is detachably attached to the block 79 using the pipe clamp 93. However, the pipe clamp 93 is not necessary in the present invention. For example, the measurement tube 73 may be attached to the block 79 so that it cannot be removed.
1‧‧‧基板處理裝置1‧‧‧ substrate processing device
1A‧‧‧基板處理裝置 1A‧‧‧ substrate processing device
3‧‧‧下部底板 3‧‧‧ lower floor
5‧‧‧水冷式底板 5‧‧‧Water-cooled floor
7‧‧‧熱處理板 7‧‧‧Heat treatment plate
9‧‧‧可動頂板單元 9‧‧‧ movable roof unit
11‧‧‧升降銷單元 11‧‧‧ Lifting Pin Unit
13‧‧‧殼體 13‧‧‧shell
15‧‧‧擋板單元 15‧‧‧ Bezel unit
17‧‧‧搬送臂 17‧‧‧ transfer arm
19‧‧‧支柱 19‧‧‧ Pillar
21‧‧‧冷媒流路 21‧‧‧Refrigerant flow path
23‧‧‧支柱 23‧‧‧ Pillar
25‧‧‧貫通口 25‧‧‧through
27‧‧‧升降底板 27‧‧‧ Lifting floor
29‧‧‧升降機構 29‧‧‧Lifting mechanism
31‧‧‧支柱 31‧‧‧ Pillar
33‧‧‧可動頂板 33‧‧‧ movable roof
35‧‧‧開口 35‧‧‧ opening
37‧‧‧驅動機構 37‧‧‧Drive mechanism
39‧‧‧升降環 39‧‧‧Lifting ring
41‧‧‧升降銷 41‧‧‧ Lifting Pin
41a‧‧‧芯部 41a‧‧‧Core
41b‧‧‧外筒 41b‧‧‧Outer tube
41c‧‧‧石英球 41c‧‧‧Quartz Ball
41d‧‧‧主體部 41d‧‧‧Main body
41e‧‧‧前端部 41e‧‧‧Front end
41f‧‧‧貫通口 41f‧‧‧through
41g‧‧‧卡合銷 41g‧‧‧Snap Pin
43‧‧‧搬入搬出口 43‧‧‧ moved in and out
45‧‧‧驅動機構 45‧‧‧Drive mechanism
47‧‧‧擋板本體 47‧‧‧Baffle body
49‧‧‧排氣口 49‧‧‧ exhaust port
51‧‧‧排氣管 51‧‧‧ exhaust pipe
53‧‧‧壓力檢測單元 53‧‧‧Pressure detection unit
55‧‧‧封裝加熱器 55‧‧‧Packed heater
61‧‧‧控制部 61‧‧‧Control Department
71‧‧‧取樣埠 71‧‧‧Sampling port
73‧‧‧測定管 73‧‧‧test tube
75‧‧‧壓力感測器 75‧‧‧Pressure sensor
77‧‧‧排氣管開口部 77‧‧‧Exhaust pipe opening
79‧‧‧塊體 79‧‧‧ block
81‧‧‧開口部 81‧‧‧ opening
83‧‧‧安裝件 83‧‧‧Mounting parts
85‧‧‧整流板 85‧‧‧ Rectifier
85A‧‧‧整流板 85A‧‧‧ Rectifier
85B‧‧‧整流板 85B‧‧‧ Rectifier
87‧‧‧測定管安裝部 87‧‧‧Measurement tube installation department
89‧‧‧凹部 89‧‧‧ recess
91‧‧‧連通空間 91‧‧‧ Connected Space
93‧‧‧管夾 93‧‧‧pipe clamp
93a‧‧‧夾片 93a‧‧‧clip
93b‧‧‧夾片 93b‧‧‧clip
93c‧‧‧夾孔 93c‧‧‧ pinhole
95‧‧‧緊固螺絲 95‧‧‧Tightening screws
W‧‧‧基板 W‧‧‧ substrate
圖1係表示實施例之基板處理裝置之整體構成之概略構成圖。FIG. 1 is a schematic configuration diagram showing the overall configuration of a substrate processing apparatus according to an embodiment.
圖2係可動頂板之俯視圖。 Figure 2 is a top view of the movable top plate.
圖3係表示升降銷之前端部附近之縱剖視圖。 Fig. 3 is a longitudinal sectional view showing the vicinity of the front end portion of the lift pin.
圖4係表示壓力檢測單元之縱剖視圖。 Fig. 4 is a longitudinal sectional view showing a pressure detection unit.
圖5係自排氣管內部觀察壓力檢測單元之圖。 Fig. 5 is a diagram of the pressure detection unit viewed from the inside of the exhaust pipe.
圖6係自排氣管外部觀察壓力檢測單元之圖。 Fig. 6 is a diagram of the pressure detection unit viewed from the outside of the exhaust pipe.
圖7係表示將基板搬入搬出之狀態之縱剖視圖。 FIG. 7 is a longitudinal sectional view showing a state in which a substrate is carried in and out.
圖8係表示對基板進行加熱之狀態之縱剖視圖。 FIG. 8 is a longitudinal sectional view showing a state where the substrate is heated.
圖9係表示整流板之第1變化例之縱剖視圖。 Fig. 9 is a longitudinal sectional view showing a first modified example of the rectifier plate.
圖10係表示整流板之第2變化例之縱剖視圖。 Fig. 10 is a longitudinal sectional view showing a second modification of the rectifier plate.
Claims (5)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018039544A JP6990121B2 (en) | 2018-03-06 | 2018-03-06 | Board processing equipment |
| JP2018-039544 | 2018-03-06 |
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| Publication Number | Publication Date |
|---|---|
| TW201939638A true TW201939638A (en) | 2019-10-01 |
| TWI712097B TWI712097B (en) | 2020-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108101760A TWI712097B (en) | 2018-03-06 | 2019-01-17 | Substrate processing device |
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| Country | Link |
|---|---|
| JP (1) | JP6990121B2 (en) |
| KR (1) | KR102195420B1 (en) |
| CN (1) | CN110233117B (en) |
| TW (1) | TWI712097B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023069210A1 (en) * | 2021-10-22 | 2023-04-27 | Lam Research Corporation | Exhaust monitoring apparatus and method for substrate processing systems |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01241819A (en) * | 1988-03-23 | 1989-09-26 | Dainippon Screen Mfg Co Ltd | Device for heat-treating substrate |
| US5782980A (en) * | 1996-05-14 | 1998-07-21 | Advanced Micro Devices, Inc. | Low pressure chemical vapor deposition apparatus including a process gas heating subsystem |
| JPH1041238A (en) * | 1996-07-22 | 1998-02-13 | Dainippon Screen Mfg Co Ltd | Heat treatment method of substrate |
| JPH10153510A (en) * | 1996-11-21 | 1998-06-09 | Nec Kansai Ltd | Vacuum apparatus and diaphragm vacuum gauge |
| US5803056A (en) * | 1997-02-12 | 1998-09-08 | Siemens Electric Limited | Canister vent valve having electric pressure sensor and valve actuator |
| US6015465A (en) * | 1998-04-08 | 2000-01-18 | Applied Materials, Inc. | Temperature control system for semiconductor process chamber |
| JP2000003843A (en) | 1998-06-12 | 2000-01-07 | Dainippon Screen Mfg Co Ltd | Wafer heat treatment device |
| JP3330335B2 (en) * | 1998-11-04 | 2002-09-30 | 東京エレクトロン株式会社 | Coating film forming device and aging treatment device |
| JP3545668B2 (en) * | 2000-03-23 | 2004-07-21 | 東京エレクトロン株式会社 | Heating apparatus and method |
| JP2003017433A (en) * | 2001-06-28 | 2003-01-17 | Tokyo Electron Ltd | Chamber sensor port |
| JP2004360994A (en) * | 2003-06-04 | 2004-12-24 | Matsushita Electric Ind Co Ltd | Incomplete combustion detecting device |
| JP2007059633A (en) * | 2005-08-24 | 2007-03-08 | Tokyo Electron Ltd | Substrate heating apparatus and substrate heating method |
| US20080006650A1 (en) * | 2006-06-27 | 2008-01-10 | Applied Materials, Inc. | Method and apparatus for multi-chamber exhaust control |
| JP4324619B2 (en) * | 2007-03-29 | 2009-09-02 | 東京エレクトロン株式会社 | Vaporization apparatus, film forming apparatus, and vaporization method |
| US7699935B2 (en) * | 2008-06-19 | 2010-04-20 | Applied Materials, Inc. | Method and system for supplying a cleaning gas into a process chamber |
| JP4930495B2 (en) * | 2008-12-04 | 2012-05-16 | 東京エレクトロン株式会社 | Substrate heating apparatus and substrate heating method |
| JP4827263B2 (en) * | 2008-12-09 | 2011-11-30 | 東京エレクトロン株式会社 | Heat treatment equipment |
| US8623141B2 (en) * | 2009-05-18 | 2014-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Piping system and control for semiconductor processing |
| JP5814005B2 (en) * | 2011-06-21 | 2015-11-17 | 芝浦メカトロニクス株式会社 | Heater unit, fan filter unit, and substrate processing apparatus |
| JP6127395B2 (en) * | 2012-06-29 | 2017-05-17 | 三菱自動車工業株式会社 | Sensor protection structure |
| JP6384414B2 (en) * | 2014-08-08 | 2018-09-05 | 東京エレクトロン株式会社 | Substrate heating apparatus, substrate heating method, storage medium |
| SG11201700850QA (en) * | 2014-08-08 | 2017-03-30 | Canon Anelva Corp | Sputtering apparatus and processing apparatus |
| JP5808472B1 (en) * | 2014-09-24 | 2015-11-10 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium |
| KR102008566B1 (en) * | 2016-05-24 | 2019-08-07 | 가부시키가이샤 스크린 홀딩스 | Substrate processing apparatus and substrate processing method |
-
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| CN110233117A (en) | 2019-09-13 |
| TWI712097B (en) | 2020-12-01 |
| JP6990121B2 (en) | 2022-01-12 |
| KR20190106671A (en) | 2019-09-18 |
| JP2019153738A (en) | 2019-09-12 |
| KR102195420B1 (en) | 2020-12-28 |
| CN110233117B (en) | 2023-02-24 |
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