JPH02312223A - Plasma processing and plasma processor - Google Patents
Plasma processing and plasma processorInfo
- Publication number
- JPH02312223A JPH02312223A JP13322689A JP13322689A JPH02312223A JP H02312223 A JPH02312223 A JP H02312223A JP 13322689 A JP13322689 A JP 13322689A JP 13322689 A JP13322689 A JP 13322689A JP H02312223 A JPH02312223 A JP H02312223A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cooling gas
- lower electrode
- chamber
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001816 cooling Methods 0.000 claims abstract description 20
- 239000000112 cooling gas Substances 0.000 claims description 50
- 238000003672 processing method Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 abstract description 88
- 238000000034 method Methods 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 238000004891 communication Methods 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程において半導体ウェハに
成膜処理を施したり半導体ウェハをエツチングしたりす
るプラズマ処理方法およびプラズマ処理装置に関するも
のである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a plasma processing method and a plasma processing apparatus for performing a film forming process on a semiconductor wafer or etching a semiconductor wafer in the manufacturing process of a semiconductor device. .
従来、この種のプラズマ処理は、通常、半導体ウェハ（
以下、単にウェハという。）を反応容器 。Traditionally, this type of plasma processing is typically performed on semiconductor wafers (
Hereinafter, it will simply be referred to as a wafer. ) in the reaction vessel.
たるチャンバー内の電極に装着させ、このチャンバー内
にプラズマを発生させて行われており、ウェハを前記電
極によって裏側から冷却させながら行われている。これ
を第２図によって説明する。The wafer is attached to an electrode in a barrel chamber, and plasma is generated in the chamber, and the wafer is cooled from the back side by the electrode. This will be explained with reference to FIG.
第２図は従来のこの種のプラズマ処理装置を示す断面図
である。同図において、１は反応容器としてのチャンバ
ーで、このチャンバー１は、被処理物たるウェハ２をチ
ャンバー１に対して出し入れするためのウェハ通路１ａ
が側部に開口され、その天井部には反応ガスを供給する
ためのガス導入管１ｂが接続されており、かつ底部には
真空ポンプ（図示せず）等に連通されチャンバー１内を
所定の圧力に減圧させるための排気管１ｃが接続されて
いる。また、このチャンバー１はウェハ通路１ａがシャ
ッター３によって選択的に開閉され、シャッター３を閉
じた状態でチャンバー１内が高真空状態で密閉されるよ
うに構成されている。４は前記ウェハ２が装着される試
料台としての下電極、５は上電極で、これらの両電極４
．５は主面を互いに対向させた状態でチャンバー１内に
水平に設置されている。前記下電極４は、そのウェハ装
着部分に開口された凹部６が電極面側に形成され、下部
には、前記凹部６の底部に開口された連通路４ａ。FIG. 2 is a sectional view showing a conventional plasma processing apparatus of this type. In the figure, 1 is a chamber as a reaction container, and this chamber 1 has a wafer passage 1a through which a wafer 2, which is an object to be processed, is taken in and out of the chamber 1.
is opened on the side, a gas introduction pipe 1b for supplying a reaction gas is connected to the ceiling, and a vacuum pump (not shown) is connected to the bottom to move the inside of the chamber 1 to a predetermined position. An exhaust pipe 1c is connected to reduce the pressure. Further, the chamber 1 is configured such that the wafer passage 1a is selectively opened and closed by a shutter 3, and when the shutter 3 is closed, the inside of the chamber 1 is sealed in a high vacuum state. 4 is a lower electrode serving as a sample stage on which the wafer 2 is mounted; 5 is an upper electrode; both of these electrodes 4
．． 5 are horizontally installed in the chamber 1 with their main surfaces facing each other. The lower electrode 4 has a recess 6 opened at the wafer mounting portion formed on the electrode surface side, and a communication path 4a opened at the bottom of the recess 6 at the lower part.
４ｂを介して冷却ガス導入管７ａ、冷却ガス排気管７ｂ
が接続されている。前記冷却ガス供給管７ａは冷却ガス
供給装置（図示せず）に接続され、また、前記冷却ガス
排気管７ｂは、チャンバー１に接続された排気管１ｃに
接続されている。すなわち、下電極４にウェハ２を装着
させた状態では、前記凹部６の開口部分がウェハ２によ
って閉塞されて凹部６内に冷却室が形成され、冷却ガス
導入管７ａから冷却ガス排気管７ｂへ至る冷却ガス通路
が形成されることになり、凹部６内に流される冷却ガス
によってウェハ２が裏側から冷却されることになる。冷
却ガスとしてはヘリウムガス等の不活性ガスが使用され
る。また、前記上電極５は高周波電源８に接続されてい
る。９はウェハ２をチャンバー１に出し入れするための
搬送アームで、この搬送アーム９はウェハ２を下電極４
に載置させたり、取り外したりすることができるように
構成されている。Cooling gas inlet pipe 7a and cooling gas exhaust pipe 7b via 4b
is connected. The cooling gas supply pipe 7a is connected to a cooling gas supply device (not shown), and the cooling gas exhaust pipe 7b is connected to an exhaust pipe 1c connected to the chamber 1. That is, when the wafer 2 is attached to the lower electrode 4, the opening of the recess 6 is closed by the wafer 2, a cooling chamber is formed within the recess 6, and the cooling gas is passed from the cooling gas introduction pipe 7a to the cooling gas exhaust pipe 7b. A cooling gas passage leading to the recess 6 is formed, and the wafer 2 is cooled from the back side by the cooling gas flowing into the recess 6. Inert gas such as helium gas is used as the cooling gas. Further, the upper electrode 5 is connected to a high frequency power source 8. Reference numeral 9 denotes a transfer arm for taking the wafer 2 into and out of the chamber 1, and this transfer arm 9 transfers the wafer 2 to the lower electrode 4.
It is configured so that it can be placed on or removed from the device.
次に、上述したように構成された従来のプラズマ処理装
置の動作について説明する。このプラズマ処理装置によ
ってウェハ２にプラズマ処理を施すには、先ず、搬送ア
ーム９によってウェハ２を下電極４上に載置させてシャ
ッタ３を閉じる。次に、チャンバー１内を所定圧力まで
減圧させ、このチャンバー１内に反応ガスをガス導入管
１ｂから供給する。しかる後、高周波電力を上電極５と
下電極４の間に印加する。前記反応ガスは両電極４゜５
間の放電によりプラズマ化され、これによってウェハ２
の表面が処理されることになる。一方、このプラズマ処
理と平行してウェハ２の冷却も行われる。ウェハ２を冷
却するには、冷却ガスを冷却ガス導入管７ａに供給し、
下電極４の連通路４ａ。Next, the operation of the conventional plasma processing apparatus configured as described above will be explained. To perform plasma processing on the wafer 2 using this plasma processing apparatus, first, the wafer 2 is placed on the lower electrode 4 by the transfer arm 9, and the shutter 3 is closed. Next, the pressure inside the chamber 1 is reduced to a predetermined pressure, and a reaction gas is supplied into the chamber 1 from the gas introduction pipe 1b. Thereafter, high frequency power is applied between the upper electrode 5 and the lower electrode 4. The reaction gas is applied to both electrodes at 4°5
The wafer 2 is turned into plasma by the discharge between
surface will be treated. Meanwhile, cooling of the wafer 2 is also performed in parallel with this plasma treatment. To cool the wafer 2, a cooling gas is supplied to the cooling gas introduction pipe 7a,
Communication path 4a of lower electrode 4.
凹部６．連通路４ｂおよび冷却ガス排気管７ｂを順次通
して排気管ｉｂに排気させて行われる。冷却ガスは、凹
部６内の冷却室に流された際にウェハ２の裏面と熱交換
が行われ、これによってウェハ２が冷却されることにな
る。プラズマ処理終了後、シャッタ３を開き搬送アーム
９によってウェハ２をチャンバー１から取り出してプラ
ズマ処理工程が終了されることになる。Recess 6. This is done by sequentially passing through the communication path 4b and the cooling gas exhaust pipe 7b and exhausting it to the exhaust pipe ib. The cooling gas exchanges heat with the back surface of the wafer 2 when flowing into the cooling chamber within the recess 6, thereby cooling the wafer 2. After the plasma processing is completed, the shutter 3 is opened and the wafer 2 is taken out from the chamber 1 by the transfer arm 9, and the plasma processing process is completed.
しかるに、このように構成された従来のプラズマ処理装
置においては、高真空２反応性プラズマガス、反応生成
物等のためにチャンバー１内にウェハ２の装着の有無を
検出するためのセンサーを設けることができない。この
ため、下電極４上に既にウェハ２が装着されているにも
かかわらずにウェハ２の装着操作が行われてしまうとい
う問題があった。このような際には下電極４上にウェハ
２が積み重ねられてしまう。However, in the conventional plasma processing apparatus configured as described above, a sensor is provided in the chamber 1 to detect the presence or absence of the wafer 2 for high vacuum dual-reactive plasma gas, reaction products, etc. I can't. For this reason, there was a problem in that the operation for mounting the wafer 2 was performed even though the wafer 2 was already mounted on the lower electrode 4. In such a case, the wafers 2 are stacked on the lower electrode 4.
本発明に係るプラズマ処理方法は、ウェハを電極に装着
する前に冷却ガスを供給し、冷却ガス通路におけるウェ
ハ冷却部より下流側の圧力によりウェハ装着の有無を検
出するものである。また、本発明に係るプラズマ処理装
置は、冷却ガス通路におけるウェハ冷却部より下流側に
、電極へのウェハの装着の有無による圧力変化を検出す
る圧力検出器を配設したものである。The plasma processing method according to the present invention supplies cooling gas before mounting the wafer on the electrode, and detects whether or not the wafer is mounted based on the pressure downstream of the wafer cooling section in the cooling gas passage. Further, in the plasma processing apparatus according to the present invention, a pressure detector is disposed downstream of the wafer cooling section in the cooling gas passage to detect a pressure change depending on whether or not a wafer is attached to the electrode.
ウェハ装着用電極にウェハが装着されていない場合には
、冷却ガスがこの電極の凹部から反応容器内に漏れるた
めに、冷却ガス通路におけるウェハ冷却部より下流側の
圧力はウェハが装着された場合に較べて低下されること
になる。本発明では、ウェハの装着操作前に冷却ガスを
供給し、冷却ガス通路におけるウェハ冷却部より下流側
の圧力を測定することによってウェハの装着、未装着を
検出することができる。When no wafer is attached to the wafer attachment electrode, cooling gas leaks into the reaction vessel from the recessed part of this electrode, so the pressure downstream of the wafer cooling section in the cooling gas passage is lower than when a wafer is attached. This will result in a decrease compared to . In the present invention, it is possible to detect whether a wafer is mounted or not by supplying cooling gas before the wafer mounting operation and measuring the pressure downstream of the wafer cooling section in the cooling gas passage.
以下、本発明のプラズマ処理方法を実施するプラズマ処
理装置の一実施例を第１図によって詳細に説明する。Hereinafter, an embodiment of a plasma processing apparatus for carrying out the plasma processing method of the present invention will be described in detail with reference to FIG.
第１図は本発明に係るプラズマ処理装置を示す断面図で
ある。同図において前記第２図で説明したものと同一も
しくは同等部材については同一符号を付し、ここにおい
て詳細な説明は省略する。FIG. 1 is a sectional view showing a plasma processing apparatus according to the present invention. In this figure, the same or equivalent members as those explained in FIG.
第１図において、１）は下電極４にウェハ２が装着され
ているか否かを検出するための圧力検出器たる真空度針
で、この真空度針１）は冷却ガス排気管７ｂに接続され
ており、冷却ガス通路内を流される冷却ガスの圧力変化
を測定することができるように構成されている。In FIG. 1, 1) is a vacuum level needle which is a pressure detector for detecting whether or not the wafer 2 is attached to the lower electrode 4, and this vacuum level needle 1) is connected to the cooling gas exhaust pipe 7b. It is configured to be able to measure changes in the pressure of the cooling gas flowing through the cooling gas passage.
次に、上述した真空度針１）によってウェハ２の装着の
有無を検出する手順について説明する。下電極４上にウ
ェハ２が装着されていない場合、冷却ガス導入管７ａか
ら下電極４の凹部６内に供給された冷却ガスは、凹部６
がウェハ２によって閉塞されていない状態であるために
チャンバー１内に拡散される。このため、冷却ガス排気
管７ｂに流される冷却ガスの圧力は低下し、チャンバー
１内の真空度と真空度針１）の示す真空度は略同−とな
る。Next, a procedure for detecting whether or not the wafer 2 is mounted using the vacuum needle 1) described above will be explained. When the wafer 2 is not mounted on the lower electrode 4 , the cooling gas supplied from the cooling gas introduction pipe 7 a into the recess 6 of the lower electrode 4 flows into the recess 6 .
is not blocked by the wafer 2, so it is diffused into the chamber 1. Therefore, the pressure of the cooling gas flowing into the cooling gas exhaust pipe 7b decreases, and the degree of vacuum in the chamber 1 and the degree of vacuum indicated by the vacuum degree needle 1) become approximately the same.
また、下電極４上にウェハ２が装着されている場合には
、冷却ガスは、下電極４の凹部６とウェハ２とで形成さ
れた冷却室に供給され、冷却ガス排気管７ｂに流される
。この際、真空度針１）の示す真空度はチャンバー１内
のそれよりも一時的に高くなる。すなわち、真空度針１
）の示す値によってウェハ２の装着の有無を検出するこ
とができ、真空度針１）の示す値がチャンバー１内の真
空度と略同−の場合にはウェハ２が未装着であるという
ことを検出することができ、また、チャンバー１内の真
空度よりも高い場合にはウェハ２が装着されていること
を検出することができる。Further, when the wafer 2 is mounted on the lower electrode 4, the cooling gas is supplied to a cooling chamber formed by the recess 6 of the lower electrode 4 and the wafer 2, and is flowed into the cooling gas exhaust pipe 7b. . At this time, the degree of vacuum indicated by the degree of vacuum needle 1) becomes temporarily higher than that inside the chamber 1. In other words, vacuum level needle 1
) can detect whether or not the wafer 2 is mounted, and if the value indicated by the vacuum level needle 1) is approximately the same as the vacuum level inside the chamber 1, it means that the wafer 2 is not mounted. Furthermore, if the degree of vacuum in the chamber 1 is higher than that in the chamber 1, it can be detected that the wafer 2 is mounted.
このように真空度針１）を備えたプラズマ処理装置によ
ってウェハ２にプラズマ処理を施すには、先ず、新たな
ウェハ２をチャンバー１内に装着させる前に冷却ガスを
下電極４に供給してウェハ２が下電極４上に残されたま
までないことを確認する。この残留ウェハの確認は上述
したように真空度針１）によって行われる。真空度針１
）の示す値がチャンバー１内のそれよりも高い場合には
、先ず、搬送アーム９によって下電極４上に残されたウ
ェハ２をチャンバー１外に搬送させ、新たなウェハ２を
下電極４上に載置させる。また、真空度針の示す値がチ
ャンバー１内のそれと略同−である場合には、ウェハ２
が未装着の状態であるから搬送アーム９によって新たな
ウェハ２を下電極４上に載置させる。このようにして下
電極４に対するウェハ２の装着の有無を１ｉ１）認して
からウェハ２の装着動作を行なうことによって、下電極
４上にウェハ２が誤って重ねられるのを防ぐことができ
る。In order to perform plasma processing on the wafer 2 using the plasma processing apparatus equipped with the vacuum needle 1) as described above, first, before installing a new wafer 2 into the chamber 1, cooling gas is supplied to the lower electrode 4. Make sure that the wafer 2 does not remain on the lower electrode 4. This residual wafer is checked using the vacuum needle 1) as described above. Vacuum needle 1
) is higher than that in the chamber 1, the wafer 2 left on the lower electrode 4 is transported outside the chamber 1 by the transport arm 9, and a new wafer 2 is transferred onto the lower electrode 4. Place it on. Also, if the value indicated by the vacuum level needle is approximately the same as that in chamber 1, wafer 2
Since the wafer 2 is not yet attached, a new wafer 2 is placed on the lower electrode 4 by the transfer arm 9. By performing the mounting operation of the wafer 2 after confirming (1i1) whether or not the wafer 2 is mounted on the lower electrode 4 in this manner, it is possible to prevent the wafer 2 from being erroneously stacked on the lower electrode 4.
しかる後、ジャック３を閉じ、チャンバー１内を所定圧
力まで減圧し、チャンバー１内に反応ガスをガス導入管
１ｂから供給する。しかる後、高周波電力を上電極５と
下電極４の間に印加する。前記反応ガスは両電極４．５
間の放電によりプラズマ化され、これによってウェハ２
の表面が処理されることになる。一方、このプラズマ処
理と平行してウェハ２の冷却も行われる。冷却ガス導入
管７ａから連通路４ａを介して凹部６内に送られた冷却
ガスは、この凹部６に形成された冷却室内でウェハ２の
裏面に接し、ウェハ２を冷却した後、連通路４ｂ、冷却
ガス排気管７ｂを介して排気管１ｂにより排気される。Thereafter, the jack 3 is closed, the pressure inside the chamber 1 is reduced to a predetermined pressure, and the reaction gas is supplied into the chamber 1 from the gas introduction pipe 1b. Thereafter, high frequency power is applied between the upper electrode 5 and the lower electrode 4. The reaction gas is applied to both electrodes 4.5
The wafer 2 is turned into plasma by the discharge between
surface will be treated. Meanwhile, cooling of the wafer 2 is also performed in parallel with this plasma treatment. The cooling gas sent into the recess 6 from the cooling gas introduction pipe 7a via the communication path 4a comes into contact with the back surface of the wafer 2 in the cooling chamber formed in the recess 6, cools the wafer 2, and then passes through the communication path 4b. , the cooling gas is exhausted from the exhaust pipe 1b via the cooling gas exhaust pipe 7b.
そして、プラズマ処理終了後、シャッタ３を開き搬送ア
ーム９によってウェハ２をチャンバー１から取り出して
プラズマ処理工程が終了されることになる。After the plasma processing is completed, the shutter 3 is opened and the wafer 2 is taken out from the chamber 1 by the transfer arm 9, and the plasma processing step is completed.
なお、本実施例では冷却ガス排気管７ｂ内とチャンバー
１内との真空度の違いを測定した例を示したが、本発明
はこのような限定にとられれるものではなく、冷却ガス
排気管７ｂ内の圧力変化を検出することができれば、そ
の圧力は何処と比較してもよい、また、本実施例では圧
力検出器に真空度針１）を使用した例を示したが、冷却
ガス排気管７ｂ内の圧力変化を検出することができるも
のであれば、真空度肝以外のものでもよい。In this embodiment, an example was shown in which the difference in the degree of vacuum between the inside of the cooling gas exhaust pipe 7b and the inside of the chamber 1 was measured, but the present invention is not limited to such a limitation. As long as the pressure change inside 7b can be detected, the pressure can be compared with any other point.Also, in this example, the vacuum level needle 1) is used as the pressure detector, but the cooling gas exhaust Any device other than the vacuum sensor may be used as long as it can detect pressure changes within the tube 7b.
以上説明したように本発明に係るプラズマ処理方法は、
ウェハを電極に装着する前に冷却ガスを供給し、冷却ガ
ス通路におけるウェハ冷却部より下流側の圧力によりウ
ェハ装着の有無を検出するものであり、また、本発明に
係るプラズマ処理装置は、冷却ガス通路におけるウェハ
冷却部より下流側に、電極へのウェハの装着の有無によ
る圧力変化を検出する圧力検出器を配設したものである
ため、ウェハ装着用電極にウェハが装着されていない場
合には、冷却ガスがこの電極の凹部から反応容器内に漏
れるために、冷却ガス通路におけるウェハ冷却部より下
流側の圧力はウェハが装着された場合に較べて低下され
ることになり、この圧力変化を検出することによってウ
ェハの装着、未装着を確認することができる。したがっ
て、本発明によれば、ウェハの装着操作前にウェハの装
着。As explained above, the plasma processing method according to the present invention includes:
The plasma processing apparatus according to the present invention supplies cooling gas before mounting the wafer on the electrode, and detects whether or not the wafer is mounted based on the pressure downstream of the wafer cooling section in the cooling gas passage. A pressure detector is installed downstream of the wafer cooling section in the gas passage to detect pressure changes depending on whether or not a wafer is attached to the electrode. Because the cooling gas leaks into the reaction vessel from the concave part of this electrode, the pressure downstream of the wafer cooling part in the cooling gas passage is lower than when the wafer is mounted, and this pressure change By detecting the wafer, it is possible to confirm whether the wafer is attached or not. Therefore, according to the present invention, wafer mounting is performed before the wafer mounting operation.
未装着を検出することができるから、ウェハ装着用電極
上ヘウエハが積み重ねられるのを確実に防ぐことができ
、製品の歩留まり向上を図ることができるという効果が
ある。また、本発明のプラズマ処理装置においては圧力
検出器が反応容器外に配設されているため、高真空２反
応性プラズマガス、反応生成物等の影響を受けることが
ないから、圧力検出器に特別なものを使用する必要もな
く低コストで実施することができる。Since non-mounting can be detected, it is possible to reliably prevent wafers from being piled up on the wafer mounting electrode, and it is possible to improve the yield of products. In addition, in the plasma processing apparatus of the present invention, since the pressure detector is disposed outside the reaction vessel, it is not affected by high vacuum 2-reactive plasma gas, reaction products, etc. There is no need to use special equipment and it can be implemented at low cost.
第１図は本発明に係るプラズマ処理装置を示す断面図、
第２図は従来のプラズマ処理装置を示す断面図である。
ｌ・・・・チャンバー、２・・・・ウェハ、４・・・・
下電極、５・・・・上電極、６・・・・凹部、７ａ−・
・・冷却ガス導入管、７ｂ・・・・冷却ガス排気管、１
）・・・・真空度針。FIG. 1 is a sectional view showing a plasma processing apparatus according to the present invention,
FIG. 2 is a sectional view showing a conventional plasma processing apparatus. l...Chamber, 2...Wafer, 4...
Lower electrode, 5...upper electrode, 6...recess, 7a-...
... Cooling gas inlet pipe, 7b... Cooling gas exhaust pipe, 1
)...Vacuum needle.
Claims (2)
部に連通された冷却ガス通路とを有するウェハ装着用電
極によって、プラズマ処理中にウェハを裏側から冷却す
るプラズマ処理方法において、ウェハを電極に装着する
前に冷却ガスを供給し、冷却ガス通路におけるウェハ冷
却部より下流側の圧力によりウェハ装着の有無を検出す
ることを特徴とするプラズマ処理方法。(1) In a plasma processing method in which a wafer is cooled from the back side during plasma processing by a wafer mounting electrode having a recess whose opening is closed by the wafer and a cooling gas passage communicating with the recess, the wafer is attached to the electrode. 1. A plasma processing method characterized by supplying cooling gas before mounting a wafer on a wafer, and detecting whether or not a wafer is mounted based on pressure downstream of a wafer cooling section in a cooling gas passage.
開口部が閉塞される凹部と、この凹部に連通された冷却
ガス通路とが設けられ、ウェハが前記冷却ガスによって
裏側から冷却されるプラズマ処理装置において、前記冷
却ガス通路におけるウェハ冷却部より下流側に、電極へ
のウェハの装着の有無による圧力変化を検出する圧力検
出器を配設したことを特徴とするプラズマ処理装置。(2) A wafer mounting electrode in the reaction vessel is provided with a recess whose opening is closed by the wafer and a cooling gas passage communicating with the recess, and the wafer is cooled from the back side by the cooling gas. A plasma processing apparatus characterized in that a pressure detector is disposed downstream of the wafer cooling section in the cooling gas passage for detecting pressure changes depending on whether or not a wafer is attached to the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13322689A JPH06101446B2 (en) | 1989-05-26 | 1989-05-26 | Plasma processing method and plasma processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13322689A JPH06101446B2 (en) | 1989-05-26 | 1989-05-26 | Plasma processing method and plasma processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02312223A true JPH02312223A (en) | 1990-12-27 |
| JPH06101446B2 JPH06101446B2 (en) | 1994-12-12 |
Family
ID=15099683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13322689A Expired - Fee Related JPH06101446B2 (en) | 1989-05-26 | 1989-05-26 | Plasma processing method and plasma processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06101446B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994028568A1 (en) * | 1993-05-28 | 1994-12-08 | The University Of Tennessee | Method and apparatus for glow discharge plasma treatment of polymer materials at atmospheric pressure |
| US5387842A (en) * | 1993-05-28 | 1995-02-07 | The University Of Tennessee Research Corp. | Steady-state, glow discharge plasma |
| US5669583A (en) * | 1994-06-06 | 1997-09-23 | University Of Tennessee Research Corporation | Method and apparatus for covering bodies with a uniform glow discharge plasma and applications thereof |
| US5792304A (en) * | 1993-09-16 | 1998-08-11 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| KR100506588B1 (en) * | 2002-08-26 | 2005-08-09 | (주) 플라즈닉스 | Apparatus for treating an object using plasma |
| JP2009249662A (en) * | 2008-04-03 | 2009-10-29 | Ulvac Japan Ltd | Vacuum treatment apparatus |
-
1989
- 1989-05-26 JP JP13322689A patent/JPH06101446B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994028568A1 (en) * | 1993-05-28 | 1994-12-08 | The University Of Tennessee | Method and apparatus for glow discharge plasma treatment of polymer materials at atmospheric pressure |
| US5387842A (en) * | 1993-05-28 | 1995-02-07 | The University Of Tennessee Research Corp. | Steady-state, glow discharge plasma |
| AU679237B2 (en) * | 1993-05-28 | 1997-06-26 | University Of Tennessee Research Corporation, The | Method and apparatus for glow discharge plasma treatment of polymer materials at atmospheric pressure |
| US5792304A (en) * | 1993-09-16 | 1998-08-11 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| US5961774A (en) * | 1993-09-16 | 1999-10-05 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| US5669583A (en) * | 1994-06-06 | 1997-09-23 | University Of Tennessee Research Corporation | Method and apparatus for covering bodies with a uniform glow discharge plasma and applications thereof |
| KR100506588B1 (en) * | 2002-08-26 | 2005-08-09 | (주) 플라즈닉스 | Apparatus for treating an object using plasma |
| JP2009249662A (en) * | 2008-04-03 | 2009-10-29 | Ulvac Japan Ltd | Vacuum treatment apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06101446B2 (en) | 1994-12-12 |
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