CN110233117A - Substrate board treatment - Google Patents
Substrate board treatment Download PDFInfo
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- CN110233117A CN110233117A CN201910040370.0A CN201910040370A CN110233117A CN 110233117 A CN110233117 A CN 110233117A CN 201910040370 A CN201910040370 A CN 201910040370A CN 110233117 A CN110233117 A CN 110233117A
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- Prior art keywords
- opening portion
- exhaust pipe
- gas
- pipe
- pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The present invention relates to substrate board treatments.Even if it is the gas comprising sublimate that the present invention, which provides a kind of, the substrate board treatment of the pressure at expulsion in exhaust pipe also can be accurately measured.The exhaust pipe opening portion 77 of exhaust pipe 51 is arranged in sampling port 71, and the pressure at expulsion in exhaust pipe 51 is measured by pressure sensor 75.The sampling port 71 has the cowling panel 85 that opening portion is covered in a manner of not observing opening portion.The cowling panel 85 is arranged in a manner of being connected to the inside of exhaust pipe 51 in the direction upper opening portion 81 orthogonal with the two of the circulating direction of the gas in exhaust pipe 51 and the central axis of opening portion 81, so pressure at expulsion can be measured using pressure sensor 75.Although sublimate contained in gas adheres to and accumulates in the upstream side of cowling panel 85, it is able to suppress and is accumulated in opening portion 81 and close opening portion 81.Even if being the gas comprising sublimate, the pressure at expulsion in exhaust pipe 51 also can be accurately measured.
Description
Technical field
The present invention relates to a kind of substrate board treatments, show to semiconductor crystal wafer, base-board of liquid crystal display, plasma
Device substrate, organic EL (Electroluminescence, electroluminescence) substrate, FED (Field Emission
Display, field-emitter display) with substrate, optical display unit substrate, substrate for magnetic disc, magneto-optic base-board for plate, light shield base
The various substrates such as plate, substrate for solar cell (hreinafter referred to as substrate) are heat-treated.
Background technique
In the past, as this device, there are following devices, have: heat treatment plate adds placed substrate
Heat;Cover member surrounds the top of heat treatment plate, is constituted in a manner of it can go up and down relative to heat treatment plate, is formed by heat
Manage heat treatment environment caused by plate;Shell surrounds heat treatment plate and cover member;Top plate, be arranged in the top surface of cover member with
Between the upper surface of heat treatment plate;And position regulating member, it adjusts between the lower surface of top plate and the upper surface of heat treatment plate
Every (for example, referring to patent document 1).
In this substrate board treatment, the intracorporal gas of shell is discharged.Specifically, have and arrange gas out of shell
The exhaust pipe of gas and the pressure sensor of the pressure in detection exhaust pipe, based on the pressure gone out by determination of pressure sensor
Control is exhausted.Pressure sensor is to measure pressure via the sampling port that exhaust pipe is arranged in.Specifically, by probe tube
One end be mounted on the opening portion being connected in exhaust pipe, and pressure sensor is installed in another side.From exhaust pipe
Gas circulating direction observation opening portion in the case where, be formed in exhaust pipe opening portion become opening portion expose state.
[background technology document]
[patent document]
[patent document 1]
Japanese Patent Laid-Open 2000-3843 bulletin
Summary of the invention
[problems to be solved by the invention]
However, being had the following problems with the previous example of this composition.
That is, recently, existing for microfabrication processing procedure and forming the lower membrane for being referred to as coated with carbon film
Situation.The generation of the lower membrane is carried out using the heat treatment of high temperature, generates the gas comprising sublimate from lower membrane at this time.?
In the substrate board treatment constituted as previous device, opened since sublimate is attached to around opening portion, and with closing
The mode sublimate of oral area is gradually accumulated down, so hampering the detection of pressure.Accordingly, there exist can not accurately measure exhaust
The problem of pressure at expulsion in pipe.
The present invention is to complete in light of this situation, even if being the gas comprising sublimate its purpose is to provide one kind
Also the substrate board treatment of the pressure at expulsion in exhaust pipe can accurately be measured.
[technical means to solve problem]
The present invention is constituted to reach this purpose using following.
That is, the invention recorded in technical solution 1 is a kind of substrate board treatment, substrate is heat-treated, and
It is characterized in that having: heat treatment plate loads substrate, and substrate is heated;Shell covers the top of the heat treatment plate, and
Form the heat treatment environment caused by heat treatment plate;Exhaust pipe, by the intracorporal gas exhaust of the shell;Exhaust pipe opening portion, shape
At in the exhaust pipe, and it is connected to the inside of the exhaust pipe;Port is sampled, is arranged in the exhaust pipe opening portion, and be used to
Detect the pressure at expulsion in the exhaust pipe;And pressure sensor, pressure at expulsion is measured via the sampling port;And it described takes
Sample port has: opening portion, is connected to the inside of the exhaust pipe in the exhaust pipe opening portion;And cowling panel, from institute
The intersection point for stating the extended line of the circulating direction of the gas in exhaust pipe and the central axis of the opening portion observes the opening portion
In the case of, the mode for not observing the opening portion covers the opening portion, and with the gas in the exhaust pipe
The orthogonal direction of the two of circulating direction and the central axis of the opening portion, the exhaust pipe gas circulating direction on ratio
The mode for the inside that at least one described opening portion of the opening portion downstream is connected to the exhaust pipe is arranged.
[effect, effect] samples port setting and is being used to handle from cover heating according to the invention recorded in technical solution 1
The exhaust pipe opening portion of the exhaust pipe of the gas exhaust of the shell on the top of plate, the pressure at expulsion in exhaust pipe pass through via sampling
The pressure sensor of port installation measures.The sampling port has cowling panel, and the cowling panel is in the stream from the gas in exhaust pipe
In the case where the intersection point observation opening portion of the extended line of the central axis in logical direction and opening portion, the mode for not observing opening portion is covered
Cover gab portion.The cowling panel is in turn orthogonal with the two of the circulating direction of the gas in exhaust pipe and the central axis of opening portion
Direction, exhaust pipe gas circulating direction at least one opening portion than opening portion downstream be connected to exhaust pipe
The mode of inside be arranged, so pressure at expulsion can be measured using pressure sensor.Therefore, sublimate contained in gas
Although adhering to and accumulating in the upstream side of cowling panel, it is able to suppress and is accumulated in opening portion and close opening portion.As a result,
Even if being the gas comprising sublimate, the pressure at expulsion in exhaust pipe also can be accurately measured.
In addition, in the present invention, it is preferred to be, the cowling panel has an inclined surface, the inclined surface from the exhaust pipe
In gas circulating direction and the opening portion central axis the two it is orthogonal direction observation in the case where, from the exhaust
Distance of the upstream side of pipe towards downstream side away from the opening portion slowly becomes larger (technical solution 2).
In the piping with opening portion opposite direction, configure with the distance from the upstream side toward the downstream side away from opening portion slowly
The cowling panel of the inclined surface to become larger, so sublimate contained in exhaust mainly adheres to and accumulates in the inclined surface.In addition, with
The downstream side opening portion of the circulating direction of the orthogonal direction of the circulating direction of gas or gas is connected to exhaust pipe, so pressure amount passes
Sensor can accurately measure pressure at expulsion via sampling port.
In addition, in the present invention, it is preferred to being the circulating direction of gas of the cowling panel from the exhaust pipe and institute
State the central axis of opening portion the two it is orthogonal direction observation section triangular shape, and its vertex with its interior angle side with it is described
Opening portion is installed by (technical solution 3) oppositely.
With the exhaust pipe of opening portion opposite direction in, cowling panel is configured in a manner of triangle roof, and become its inclined surface face
To the posture of the circulating direction of gas.Therefore, sublimate contained in exhaust mainly adheres in the inclined surface towards its upstream and downstream
And it accumulates.In addition, due in the direction opening portion connection orthogonal with the two of the circulating direction of gas and the central axis of opening portion
To exhaust pipe, so pressure sensor can accurately measure pressure at expulsion via sampling port.
In addition, having in the present invention, it is preferred to be: block forms the opening portion;And installation part, it is opened with described
Mode of the oral area towards the exhaust pipe opening portion, is detachably mounted on the exhaust pipe for the block;The rectification
Plate is mounted on the exhaust pipe opening portion side (technical solution 4) of the block.
It, can be from exhaust pipe removal block, even if so sublimate is attached to opening portion and also can when by installation part removal
It is enough to be readily removable by maintenance.Therefore, by implementing the maintenance of periodicity, the precision of pressure at expulsion is maintained during capable of growing.
In addition, the block is formed described in being connected in the opposing face of the opening portion in the present invention, it is preferred to be
The measurement pipe mounting portion of opening portion, and have: measurement pipe configures one end in the measurement pipe mounting portion of the block
Side configures the pressure sensor in another side;And measurement pipe installation part, certainly by the one end handling of the measurement pipe
Be mounted on as described in measure pipe mounting portion (technical solution 5).
It, can be by measurement pipe from block removal, even if so sublimate is attached to survey when pipe installation part removal will be measured
The inside for determining pipe can be also readily removable by maintenance.Therefore, by implementing the maintenance of periodicity, the row of maintenance during capable of growing
The precision of atmospheric pressure.
[The effect of invention]
Substrate board treatment according to the present invention, sampling port is arranged in will be from the shell on the top of cover heating processing board
The exhaust pipe opening portion of the exhaust pipe of gas exhaust, the pressure at expulsion in exhaust pipe pass through the pressure sensing via the installation of sampling port
Device measures.The sampling port has cowling panel, the cowling panel with from the gas in exhaust pipe circulating direction and opening portion
In the case where the intersection point observation opening portion of the extended line of central axis, the mode for not observing opening portion covers opening portion.The rectification
Plate and then in the direction orthogonal with the two of the circulating direction of the gas in exhaust pipe and the central axis of opening portion, exhaust pipe
The mode of the inside for being connected to exhaust pipe than at least one opening portion of opening portion downstream on the circulating direction of gas is set
It sets, so determination of pressure sensor pressure at expulsion can be utilized.Therefore, although sublimate is in the upper of cowling panel contained in gas
Trip side is adhered to and is accumulated, but is able to suppress and accumulates in opening portion and close opening portion.Even if as a result, to include sublimate
Gas also can accurately measure the pressure at expulsion in exhaust pipe.
Detailed description of the invention
Fig. 1 is the schematic configuration diagram for indicating the overall structure of substrate board treatment of embodiment.
Fig. 2 is the top view of movable top plate.
Fig. 3 is the longitudinal section view indicated near the front end of lifter pin.
Fig. 4 is the longitudinal section view for indicating pressure sensing cell.
Fig. 5 is the figure of the pressure sensing cell from exhaust pipe inside.
Fig. 6 is the figure from exhaust pipe external observation pressure sensing cell.
Fig. 7 is indicated the longitudinal section view of the state of substrate carrying-in/carrying-out.
Fig. 8 is the longitudinal section view for indicating the state heated the substrate.
Fig. 9 is the longitudinal section view for indicating the 1st change case of cowling panel.
Figure 10 is the longitudinal section view for indicating the 2nd change case of cowling panel.
Specific embodiment
Hereinafter, being illustrated referring to attached drawing to one embodiment of the invention.
Fig. 1 is the schematic configuration diagram for indicating the overall structure of substrate board treatment of embodiment, and Fig. 2 is bowing for movable top plate
View, Fig. 3 are the longitudinal section views indicated near the front end of lifter pin.
The substrate board treatment 1 of embodiment is to implement heat-treating apparatus to substrate W.Specifically, for microfabrication
Processing procedure, for example, formed referred to as be coated with carbon film lower membrane when heat treatment.In order to generate the lower membrane, and with 300~
500 DEG C or so of high temperature is heat-treated.
Substrate board treatment 1 has lower raft 3, water-cooled bottom plate 5, heat treatment plate 7, movable top plate unit 9, lifter pin
Unit 11, shell 13 and baffle plate unit 15.
The substrate board treatment 1 moves in substrate W from the carrying arm 17 for being adjacent to configuration, after implementing heat treatment, will handle
The substrate W finished is moved out using carrying arm 17.
Lower raft 3 is erect in upper surface and is provided with pillar 19, configures water-cooled bottom plate 5 on the top of the pillar 19.
Water-cooled bottom plate 5 inhibits the heat of heat treatment plate 7 to transmit downwards.Specifically, water-cooled bottom plate 5 is for example in inside throughout whole
It is formed with the refrigerant flow 21 for the refrigerant that can circulate.In the refrigerant flow 21, such as refrigerant circulation cooling water.The cooling
Water such as temperature is adjusted to 20 DEG C.
Heat treatment plate 7 is overlooked in rounded shape.Its diameter is slightly bigger than the diameter of substrate W.Heat treatment plate 7 it is built-in it is not shown
The heating devices such as heater, for example, being heated in such a way that surface temperature becomes 400 DEG C.Heat treatment plate 7 is existed by setting
Pillar 23 between its lower surface and the upper surface of water-cooled bottom plate 5, is matched with the state left upwards from water-cooled bottom plate 5
It sets.Heat treatment plate 7 forms openings 25 in the position with each vertex correspondence of equilateral triangle under vertical view.
Movable top plate unit 9 is set up in heat treatment plate 7.Movable top plate unit 9 has lifting bottom plate 27, elevating mechanism
29, pillar 31 and movable top plate 33.
Lifting bottom plate 27 has the opening avoided with the interference of pillar 23 or following lifter pins 41.Elevating mechanism 29 is for example
It is made of cylinder.Elevating mechanism 29 is so that the posture contiguity for being partially toward top with action shaft is mounted on water-cooled bottom plate 5.
The elevating mechanism 29 can be fixed at an arbitrary position by the height of the front end of action shaft.The action shaft of elevating mechanism 29 is linked to
Go up and down the bottom surface of bottom plate 27.If going up and down the action shaft of elevating mechanism 29, the height position of lifting bottom plate 27 can be changed
It sets.The surface on it of bottom plate 27 is gone up and down, such as erects and 4 pillars 31 is set.Movable top is installed in the upper end of 4 pillars 31
Plate 33.
As shown in Fig. 2, movable top plate 33, which is formed under overlooking in central portion, is open 35.Opening 35 forms get Bi Ji under overlooking
The diameter of plate W is small.The movable top plate 33 is by 29 actuation of elevating mechanism, with lifting 27 1 lifting of bottom plate.Movable top plate 33
Lifting position bridgees across down position when being heat-treated to substrate W, moves with lifting position when moving in substrate W.This
Outside, the upper surface of down position preferable substrate W is about 10mm at a distance from the lower surface of movable top plate 33.The reason is that logical
The experiment for crossing inventor etc. learns, the inner evenness of the Temperature Distribution on surface in order to improve substrate W, the preferably distance.
Movable top plate 33 in its diagonal length formed longer than the diameter of heat treatment plate 7 it is rectangular-shaped.4 pillars 31 are each
From upper end be linked to movable top plate 33 lower surface in quadrangle.The quadrangle of movable top plate 33 is in far from bowing as heat source
Depending on the position of the heat treatment plate 7 of round.Therefore, movable top plate 33 is heated even by the radiant heat of heat treatment plate 7, it can also
Heat is set to be difficult to be transferred to pillar 31.Therefore, elevating mechanism 29 is not easily susceptible to the influence of heat, is able to suppress the generation of failure.
The movable top plate 33 preferably comprises the alloy of ceramics or metal and ceramics.Even if carrying out the heat of high temperature as a result,
Processing, the deformation caused by capable of also preventing because of heat.
Lifter pin unit 11 has driving mechanism 37, lifting ring 39 and 3 lifter pins 41.In addition, lifter pin 41 is because of figure
The relationship shown only describes 2.
Driving mechanism 37 is for example made of cylinder.Driving mechanism 37 so that with its action shaft be partially toward lower section, and
Opposite side is set to be close contact in the state installation of the lower surface of water-cooled bottom plate 5.In the lower part of action shaft, link lifting ring 39.?
3 lifter pins 41 are arranged in the upper surface of lifting ring 39, setting.Driving mechanism 39 can bridge across 3 lifter pins 41 from heat treatment
The upper surface of plate 7 upwards delivery position (double dot dash line in Fig. 1) outstanding, with 3 lifter pins 41 from the upper of heat treatment plate 7
Two positions of the processing position (solid line in Fig. 1) that surface is sunk to downwards adjust the height and position of its action shaft.3 liftings
Pin 41 is inserted through the openings 25 for being formed in 3 positions of heat treatment plate 7.
Lifter pin 41 is preferably constituted in the manner shown in fig. 3.Lifter pin 41 has core 41a, outer cylinder 41b, Yi Jishi
English ball 41c.Core 41a is that the front end 41e on the top in main part 41d forms smaller than main part 41d diameter.Outer cylinder
41b is to be formed as the internal diameter slightly bigger than the outer diameter of quartz ball 41c other than front end.The front end of outer cylinder 41b is formed as comparing stone
The small internal diameter of the diameter of English ball 41c.Quartz ball 41c is that its diameter forms slightly smaller than front end 41e.Therefore, will be quartzy
Ball 41c is positioned in the state of the upper surface of front end 41e, if covering outer cylinder 41b, 1/3 as quartz ball 41c is left
The right side is from outer cylinder 41b state outstanding.In this state, by being pressed into engagement pin 41g to perforation core 41d's and outer cylinder 41b
Openings 41f, and outer cylinder 41b is fixed on to core 41a together with quartz ball 41c and constitutes lifter pin 41.In addition, quartz ball 41c
Component in addition is made of metal.
Although preferably quartzy as the material for being resistant to hot environment, if it is considered that intensity or cost, then being difficult to make
The generally quartz system of lifter pin 41.Therefore, as described above, by only making the quartz ball 41c quartz system of front end then can
Inhibit cost.In addition, it is quartzy due to highly slightly low compared with as the monocrystalline silicon of the material of substrate W, so wounded substrate W
A possibility that lower surface, is lower, moreover, because being spherical so can make contact area irreducible minimum.
Shell 13 covers the top of heat treatment plate 7, forms the heat treatment environment caused by heat treatment plate 7.Shell 13 is at it
Carrying-in/carrying-out mouth 43 is formed on one side.Carrying-in/carrying-out mouth 43 is from the height and position upward opening near the upper surface of heat treatment plate 7.
Carrying arm 17 carries out the carrying-in/carrying-out of substrate W by the carrying-in/carrying-out mouth 43.
Baffle plate unit 15 is set up in carrying-in/carrying-out mouth 43.Baffle plate unit 15 has driving mechanism 45 and baffle body
47.Driving mechanism 45 is installed on water-cooled bottom plate 5 with the posture for being partially toward top of its action shaft, by a part contiguity.?
The top of action shaft links baffle body 47.If driving mechanism 45 makes actuation elongate axis, baffle body 47 rise and
Carrying-in/carrying-out mouth 43 is closed (solid line shown in FIG. 1), if driving mechanism 45 shrinks action shaft, under baffle body 47
It drops and the opening of carrying-in/carrying-out mouth 43 (double dot dash line shown in FIG. 1).
Shell 13 forms exhaust outlet 49 in its top surface.Exhaust outlet 49 is connected to exhaust pipe 51.The exhaust of shell 13
Mouth 49 and the interval of the upper surface of heat treatment plate 7 are, for example, 30mm or so.Exhaust pipe 51 is connected to exhaust equipment 52.Exhaust
Equipment 52 by can by from external instruction adjustment extraction flow in a manner of constituted.It is configured in a part of exhaust pipe 51
Pressure sensing cell 53.The pressure sensing cell 53 detects the pressure at expulsion in exhaust pipe 51.About pressure sensing cell 53
Detailed composition be explained below.
Encapsulation heater 55 is arranged along the upper surface of exhaust pipe 51 in shell 13.The encapsulation heater 55 to shell 13 or
Exhaust pipe 51 is heated, and when the gas comprising sublimate is contacted with shell 13, prevents gas cooling and sublimate is attached to
The inner wall of shell 13.
The not shown CPU of control unit 61 (Central Processing Unit, central processing unit) or memory structure
At.Control unit 61 carries out temperature control, the driving of the elevating control of movable top plate unit 9, lifter pin unit 11 of heat treatment plate 7
Control, the open and close control of baffle plate unit 15, the temperature control for encapsulating heater 55, the exhaust equipment based on pressure sensing cell 53
52 gas exhaust inspecting etc..In addition, control unit 61 can down position in the elevating control to movable top plate unit 9 according to substrate
W carries out various operations.For example, the prespecified movable top plate 33 of formula of the treatment conditions or sequence of substrate W each to regulation
Down position operates instruction unit (not shown), is equivalent to movable surface of the top plate 33 away from substrate W to formula instruction in advance
Distance parameter.Control unit 61 is for example when handling substrate W, referring to being indicated by device operator and W pairs of substrate
The formula answered operates elevating mechanism 29 according to the parameter.Thereby, it is possible to adjust movable top plate 33 for each substrate W
Down position.
Herein, referring to Fig. 4~Fig. 6, the detailed composition of pressure sensing cell 53 is illustrated.In addition, Fig. 4 is to indicate
The longitudinal section view of pressure sensing cell, Fig. 5 are the figures of the pressure sensing cell from exhaust pipe inside, and Fig. 6 is outside exhaust pipe
The figure of portion's observation pressure sensing cell.
Pressure sensing cell 53 has sampling port 71, measurement pipe 73 and pressure sensor 75.
The inside of exhaust pipe 51 is connected to connection with measurement pipe 73 and pressure sensor 75 by sampling port 71.Port 71 is sampled to have
It is constituted as follows for body.
Sampling port 71 is formed in exhaust pipe 51, and is mounted on the exhaust pipe opening portion 77 for being connected to the inside of exhaust pipe 51.
Sampling port 71 has block 79, opening portion 81, installation part 83 and cowling panel 85.
Block 79 is formed with opening portion 81.Block 79 is that appearance is plate-like, and is formed about opening portion 81 in center.It should
Opening portion 81 runs through the positive back side (the left and right face of Fig. 4) of block 79.The internal diameter that opening portion 81 is formed with the right side in Fig. 4 is formed
Obtain the measurement pipe mounting portion 87 slightly bigger than the internal diameter in left side.Above and below near the center in the surface (right side) of block 79
End, forms the recess portion 89 for installation part 83.Installation part 83 is installed in recess portion 89, block 79 is with opening portion 81 towards exhaust
The mode in tube opening portion 77, and block 79 is mounted on exhaust pipe 51 in a manner of covering exhaust pipe opening portion 77.Installation part 83
Such as illustrate hex(agonal)screw.
Block 79 bridgees across the opening on the circulating direction (in Fig. 4~Fig. 6 as shown in arrow) of the gas in exhaust pipe 51
The upstream side in portion 81 to downstream side is installed with cowling panel 85 in a manner of across opening portion 81.Cowling panel 85 is in such as under type
The mode of covering opening portion 81 configures, that is, in the circulating direction and the central axis of opening portion 81 from the gas in exhaust pipe 51
In the case where the intersection point observation opening portion 81 of extended line, opening portion 81 is not observed as shown in Figure 5.In turn, cowling panel 85 with
The direction (Fig. 4) orthogonal with the two of the circulating direction of the gas in exhaust pipe 51 and the central axis of opening portion 81, opening portion 81
The mode for being connected to the inside of exhaust pipe 51 is arranged.
More specifically, the circulating direction of the gas from exhaust pipe 51 and the two of central axis of opening portion 81 are orthogonal
Direction (Fig. 4) observation section triangular shape.Moreover, its vertex is to install its interior angle side and opening portion 81 oppositely.
That is, cowling panel 85 in from gas from exhaust pipe 51 by opening portion 81 on the basis of upstream side downstream flow down
Opening portion 81 is not observed in the case where viewing point sampling 71 side of port on axis.In other words, from it is shown in Fig. 4 with row
The two of the central axis of the circulating direction and opening portion 81 of gas in tracheae 51 it is orthogonal direction observation in the case where, formed with
The connected space 91 that opening portion 81 is connected to.Connected space 91 in this case is its longitudinal section triangular shape, from shown in Fig. 4
Direction observation in the case where, until the central axis of opening portion 81 until, from the circulating direction of gas upstream side direction under
Distance of the side until from opening portion 81 to cowling panel 85 is swum slowly to become larger.
Block 79 is in one end of the measurement pipe mounting portion 87 inserted with measurement pipe 73.Measurement pipe 73 in block 79 by installing
Pipe clamp 93 in the face of the opposite side in exhaust pipe 51 is fixed.Pipe clamp 93 is as shown in fig. 6, have the intermediate plate for being divided into two strands
The folder hole 93c of 93a, 93b and formation between them.By will only be screwed in the fastening screw of one of intermediate plate 93a, 93b
95 are screwed into and intermediate plate 93a, 93b are close to each other, and clamp and be inserted in the outer peripheral surface of the measurement pipe 73 of folder hole 93c and consolidate measurement pipe 73
It is fixed.In addition, being left each other by unclamping fastening screw 95 intermediate plate 93a, 93b, the outer peripheral surface for measuring pipe 73 is opened from folder hole 93c
It puts, measures pipe 73 so as to removal.
Pressure sensor 75 is installed in the another side of measurement pipe 73.Pressure sensor 75 is via measurement pipe 73, opening
Portion 81 and connected space 91 are measured the pressure at expulsion of the gas in exhaust pipe 51.It is measured by pressure sensor 75
Pressure at expulsion out is given to control unit 61.
In addition, the pipe clamp is equivalent to " measurement pipe installation part " in the present invention.
Secondly, being illustrated referring to Fig. 7 and Fig. 8 to the processing of the substrate W of the substrate board treatment of the composition.This
Outside, Fig. 7 is to indicate by the longitudinal section view of the state of substrate carrying-in/carrying-out, and Fig. 8 is the vertical of the state for indicating to heat the substrate
Cross-sectional view.
Firstly, making movable top plate 33 be moved to rising as shown in fig. 7, control unit 61 operates movable top plate unit 9
Position.In turn, control unit 61 operates lifter pin unit 11, and 3 lifter pins 41 is made to rise to delivery position.With these behaviour
Make together, control unit 61 operates baffle plate unit 15, keeps carrying-in/carrying-out mouth 43 open.
Then, control unit 61 makes carrying arm 17 to be in the following table of movable top plate higher than delivery position and than lifting position
The state of the low position in face enters from carrying-in/carrying-out mouth 43, and declines carrying arm 17 in the top of heat treatment plate 7.As a result, will
Substrate W is handover to the lifter pin 41 in delivery position.Then, exit carrying arm 17 from carrying-in/carrying-out mouth 43, and to gear
Plate unit 15 is operated, and carrying-in/carrying-out mouth 43 is closed.
Then, as shown in figure 8, control unit 61 operates lifter pin unit 11,3 lifter pins 41 is made to drop to processing
Position.400 DEG C of heat treatment is carried out to substrate W as a result,.61 reference formulation of control unit, is added in defined heating time
Heat treatment.
When by specific heating time, control unit 61 grasps movable top plate unit 9 and lifter pin unit 11
Make, so that movable top plate 33 is risen to lifting position, and lifter pin 41 is made to rise to delivery position.Then, 61 pairs of control unit gears
Plate unit 15 is operated, and keeps carrying-in/carrying-out mouth 43 open.In turn, control unit 61 makes carrying arm 17 from the lower than delivery position
And the height more against the top than the upper surface of heat treatment plate 7 enters to carrying-in/carrying-out mouth 43.Then, by rising to carrying arm 17
Position higher than delivery position and lower than the lower surface of movable top plate 33, and what carrying arm 17 was disposed from the reception of lifter pin 41
Substrate W.Then, by exiting carrying arm 17 from carrying-in/carrying-out 43, and move out the substrate W being disposed.In addition, control unit
61 during the processing in, based on the pressure at expulsion in the exhaust pipe 51 detected using pressure sensing cell 53 to exhaust
Equipment 52 is operated, and is controlled the extraction flow in exhaust pipe 51 in a manner of becoming and specifically be worth according to treatment situation
System.
The heat treatment to a plate base W is completed by a series of movement, but is handled to new substrate W
When, control unit 61 for example can refer to the formula indicated by device operator, and will utilize the movable top plate 33 of movable top plate unit 9
Lifting position be indicated to formula.
According to the present embodiment, the exhaust pipe opening portion 77 that exhaust pipe 51 is arranged in port 71, the exhaust in exhaust pipe 51 are sampled
Pressure is measured by the pressure sensor 75 installed via sampling port 71.The sampling port 71 has cowling panel 85, the cowling panel
85 in the opening portion from the intersection point of the extended line of the central axis of the circulating direction of the gas in exhaust pipe 51 Yu opening portion 81
In the case where, the mode for not observing opening portion covers opening portion.The cowling panel 85 so with the gas in exhaust pipe 51
Circulating direction and opening portion 81 central axis the orthogonal direction opening portion 81 of the two be connected to exhaust pipe 51 inside side
Formula setting, so pressure at expulsion can be measured using pressure sensor 75.Therefore, although sublimate contained in gas adheres to simultaneously
It is deposited in the upstream side of cowling panel 85, but is able to suppress and is deposited in opening portion 81 and closes opening portion 81.Even if as a result,
For the gas comprising sublimate, the pressure at expulsion in exhaust pipe 51 also can be accurately measured.
In turn, according to the cowling panel of the present embodiment 85, effect below is obtained.
That is, cowling panel 85 is configured in a manner of triangle roof in the exhaust pipe 51 opposite with opening portion 81, and
The posture of circulating direction as its inclined surface towards gas.Therefore, sublimate contained in exhaust is mainly towards its upstream
And the inclined surface in downstream is adhered to and is accumulated.In addition, due to two of the central axis in the circulating direction and opening portion 81 with gas
The orthogonal direction opening portion 81 of person is connected to exhaust pipe 51, so pressure sensor 75 can accurately be measured via sampling port 71
Pressure at expulsion.
In addition, when by 83 removal of installation part, can from exhaust pipe 51 by block 79 and cowling panel 85 together removal, so
Even if sublimate is attached to cowling panel 85 or opening portion 81 and can be also readily removable by maintenance.Therefore, regular by implementing
Property maintenance, during capable of growing maintain pressure at expulsion precision.In turn, when unclamping pipe clamp 93, pipe 73 will can be measured from block
79 removal of body, even if so the inside that sublimate is attached to measurement pipe 73 can be also readily removable by maintenance.Therefore, pass through
The maintenance for implementing periodicity maintains the precision of pressure at expulsion during capable of growing.
The 1st change case > of <
Herein, referring to Fig. 9, another embodiment of the cowling panel 85 is illustrated.In addition, Fig. 9 is to indicate cowling panel
The 1st change case longitudinal section view.
Cowling panel 85A is in the extended line of the central axis of circulating direction and opening portion 81 from the gas in exhaust pipe 51
Intersection point observation opening portion 81 in the case where, the mode for not observing opening portion 81 covers opening portion 81.In turn, the cowling panel
85A with not only in the direction orthogonal with the two of central axis of the circulating direction of the gas in exhaust pipe 51 and opening portion 81, and
And also the 81 downstream opening portion 81 of ratio opening portion on the circulating direction of the gas of exhaust pipe 51 is connected to exhaust pipe 51
Internal mode is arranged.In other words, central side of the cowling panel 85A with inclined surface from the wall surface of exhaust pipe 51 towards exhaust pipe 51
Slowly separate mode is formed.To the peripheral part in the downstream side than opening portion 81, side extends farther downstream for the end of side downstream.
This cowling panel 85A can be set as more easy than the cowling panel 85 and constitute, and in the same manner as the embodiment, can
Inhibit sublimate to accumulate in opening portion 81 and closes opening portion 81.
The 2nd change case > of <
Herein, referring to Fig.1 0, another embodiment of the cowling panel 85,85A are illustrated.In addition, Figure 10 is to indicate
The longitudinal section view of 2nd change case of cowling panel.
Cowling panel 85B is with the 81 downstream opening portion of relatively opening portion only on the circulating direction of the gas of exhaust pipe 51
81 modes for being connected to the inside of exhaust pipe 51 are arranged.Cowling panel 85B is formed as only in the hood-like of the downstream side opening of exhaust.
This cowling panel 85B is able to suppress sublimate and accumulates in opening portion 81 and close opening portion 81 in the same manner as the embodiment.
Moreover, because inclined surface is supported by the plate-shaped member of side, so can be improved mechanical strength.
It, being capable of change in the following manner the present invention is not limited to the embodiment.
(1) in the described embodiment, has movable top plate 33, but the present invention need not have this composition.As long as that is,
To have the exhaust pipe 51 of the gas exhaust in the shell 13 that will form heat treatment environment, and detect the base of its pressure at expulsion
Plate processing unit then can be using the present invention.
(2) in the described embodiment, it is set as that block 79 is detachably mounted on exhaust pipe 51 by installation part 83
Composition, but the present invention is not limited to this compositions.For example, block 79 and exhaust pipe 51 can also be filled using pulling buckle (zipper)
It unloads and constitutes freely.In addition, can also be set as that the composition that port 71 is fixedly mounted in a part of exhaust pipe 51 will be sampled, and it is set as
Make the composition that a part of exhaust pipe 51 is detachable in exhaust pipe 51.
(3) in the described embodiment, it is set as making to measure the composition detachable relative to block 79 of pipe 73 using pipe clamp 93.
However, the present invention and nonessential pipe clamp 93.For example, can also be by measurement pipe 73 block 79 can not be mounted in a manner of removal.
[explanation of symbol]
1,1A substrate board treatment
W substrate
3 lower rafts
5 water-cooled bottom plates
7 heat treatment plates
9 movable top plate units
11 lifter pin units
13 shells
15 baffle plate units
29 elevating mechanisms
33 movable top plates
35 openings
37 driving mechanisms
41 lifter pins
43 carrying-in/carrying-out mouth
47 baffle bodies
51 exhaust pipes
53 pressure sensing cells
61 control units
71 sampling ports
73 measurement pipes
75 pressure sensors
77 exhaust pipe opening portions
79 blocks
81 opening portions
83 installation parts
85,85A, 85B cowling panel
87 measurement pipe mounting portions
93 pipe clamps
Claims (5)
1. a kind of substrate board treatment, is heat-treated substrate, and it is characterized in that having:
Heat treatment plate loads substrate, and substrate is heated;
Shell covers the top of the heat treatment plate, and forms the heat treatment environment caused by heat treatment plate;
Exhaust pipe, by the intracorporal gas exhaust of the shell;
Exhaust pipe opening portion is formed in the exhaust pipe, and is connected to the inside of the exhaust pipe;
Port is sampled, is arranged in the exhaust pipe opening portion, and is used to detect the pressure at expulsion in the exhaust pipe;And
Pressure sensor measures pressure at expulsion via the sampling port;And
The sampling port has:
Opening portion is connected to the inside of the exhaust pipe in the exhaust pipe opening portion;And
Cowling panel, in the friendship of the extended line of the central axis of circulating direction and the opening portion from the gas in the exhaust pipe
In the case that point observes the opening portion, the mode for not observing the opening portion covers the opening portion, and with institute
State the gas in the orthogonal direction of the two of the circulating direction of the gas in exhaust pipe and the central axis of the opening portion, the exhaust pipe
At least one described opening portion of opening portion downstream described in ratio on the circulating direction of body is connected to the interior of the exhaust pipe
The mode in portion is arranged.
2. substrate board treatment according to claim 1, it is characterised in that:
The cowling panel has inclined surface, circulating direction and the opening of the inclined surface in the gas from the exhaust pipe
In the case where the orthogonal direction observation of the two of the central axis in portion, opened from the upstream side of the exhaust pipe towards downstream side away from described
The distance of oral area slowly becomes larger.
3. substrate board treatment according to claim 1 or 2, it is characterised in that:
The circulating direction of gas of the cowling panel from the exhaust pipe and the two of central axis of the opening portion are orthogonal
Direction observation section triangular shape, and its vertex is to install its interior angle side and the opening portion oppositely.
4. substrate board treatment according to claim 1, it is characterised in that have:
Block forms the opening portion;And
The block is detachably mounted on by installation part in such a way that the opening portion is towards the exhaust pipe opening portion
The exhaust pipe;And
The cowling panel is mounted on the exhaust pipe opening portion side of the block.
5. substrate board treatment according to claim 4, it is characterised in that:
The block forms the measurement pipe mounting portion for being connected to the opening portion in the opposing face of the opening portion, and has
It is standby:
Measurement pipe, configures one end in the measurement pipe mounting portion of the block, and configure the pressure in another side
Force snesor;And
Pipe installation part is measured, the one end of the measurement pipe is detachably mounted on the measurement pipe mounting portion.
Applications Claiming Priority (2)
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JP2018-039544 | 2018-03-06 | ||
JP2018039544A JP6990121B2 (en) | 2018-03-06 | 2018-03-06 | Board processing equipment |
Publications (2)
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CN110233117A true CN110233117A (en) | 2019-09-13 |
CN110233117B CN110233117B (en) | 2023-02-24 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201910040370.0A Active CN110233117B (en) | 2018-03-06 | 2019-01-16 | Substrate processing apparatus |
Country Status (4)
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JP (1) | JP6990121B2 (en) |
KR (1) | KR102195420B1 (en) |
CN (1) | CN110233117B (en) |
TW (1) | TWI712097B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023069210A1 (en) * | 2021-10-22 | 2023-04-27 | Lam Research Corporation | Exhaust monitoring apparatus and method for substrate processing systems |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01241819A (en) * | 1988-03-23 | 1989-09-26 | Dainippon Screen Mfg Co Ltd | Device for heat-treating substrate |
JPH1041238A (en) * | 1996-07-22 | 1998-02-13 | Dainippon Screen Mfg Co Ltd | Heat treatment method of substrate |
JP2001274052A (en) * | 2000-03-23 | 2001-10-05 | Tokyo Electron Ltd | Heating device and method |
TW200725694A (en) * | 2005-08-24 | 2007-07-01 | Tokyo Electron Ltd | Substrate heating device and substrate heating method |
KR20100064341A (en) * | 2008-12-04 | 2010-06-14 | 도쿄엘렉트론가부시키가이샤 | Substrate heating apparatus and substrate heating method |
JP2010140960A (en) * | 2008-12-09 | 2010-06-24 | Tokyo Electron Ltd | Heat treatment apparatus |
CN102842525A (en) * | 2011-06-21 | 2012-12-26 | 芝浦机械电子株式会社 | Heater unit, fan filter unit, and substrate processing apparatus |
CN105374711A (en) * | 2014-08-08 | 2016-03-02 | 东京毅力科创株式会社 | Substrate heating device and substrate heating method |
CN107481954A (en) * | 2016-05-24 | 2017-12-15 | 株式会社斯库林集团 | Substrate board treatment and substrate processing method using same |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5782980A (en) * | 1996-05-14 | 1998-07-21 | Advanced Micro Devices, Inc. | Low pressure chemical vapor deposition apparatus including a process gas heating subsystem |
JPH10153510A (en) * | 1996-11-21 | 1998-06-09 | Nec Kansai Ltd | Vacuum apparatus and diaphragm vacuum gauge |
US5803056A (en) * | 1997-02-12 | 1998-09-08 | Siemens Electric Limited | Canister vent valve having electric pressure sensor and valve actuator |
US6015465A (en) * | 1998-04-08 | 2000-01-18 | Applied Materials, Inc. | Temperature control system for semiconductor process chamber |
JP2000003843A (en) | 1998-06-12 | 2000-01-07 | Dainippon Screen Mfg Co Ltd | Wafer heat treatment device |
JP3330335B2 (en) * | 1998-11-04 | 2002-09-30 | 東京エレクトロン株式会社 | Coating film forming device and aging treatment device |
JP2003017433A (en) * | 2001-06-28 | 2003-01-17 | Tokyo Electron Ltd | Chamber sensor port |
JP2004360994A (en) | 2003-06-04 | 2004-12-24 | Matsushita Electric Ind Co Ltd | Incomplete combustion detecting device |
US20080006650A1 (en) * | 2006-06-27 | 2008-01-10 | Applied Materials, Inc. | Method and apparatus for multi-chamber exhaust control |
JP4324619B2 (en) * | 2007-03-29 | 2009-09-02 | 東京エレクトロン株式会社 | Vaporization apparatus, film forming apparatus, and vaporization method |
US7699935B2 (en) * | 2008-06-19 | 2010-04-20 | Applied Materials, Inc. | Method and system for supplying a cleaning gas into a process chamber |
US8623141B2 (en) * | 2009-05-18 | 2014-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Piping system and control for semiconductor processing |
JP6127395B2 (en) * | 2012-06-29 | 2017-05-17 | 三菱自動車工業株式会社 | Sensor protection structure |
SG11201700850QA (en) * | 2014-08-08 | 2017-03-30 | Canon Anelva Corp | Sputtering apparatus and processing apparatus |
JP5808472B1 (en) * | 2014-09-24 | 2015-11-10 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium |
-
2018
- 2018-03-06 JP JP2018039544A patent/JP6990121B2/en active Active
-
2019
- 2019-01-16 CN CN201910040370.0A patent/CN110233117B/en active Active
- 2019-01-17 TW TW108101760A patent/TWI712097B/en active
- 2019-01-29 KR KR1020190011206A patent/KR102195420B1/en active IP Right Grant
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01241819A (en) * | 1988-03-23 | 1989-09-26 | Dainippon Screen Mfg Co Ltd | Device for heat-treating substrate |
JPH1041238A (en) * | 1996-07-22 | 1998-02-13 | Dainippon Screen Mfg Co Ltd | Heat treatment method of substrate |
JP2001274052A (en) * | 2000-03-23 | 2001-10-05 | Tokyo Electron Ltd | Heating device and method |
TW200725694A (en) * | 2005-08-24 | 2007-07-01 | Tokyo Electron Ltd | Substrate heating device and substrate heating method |
KR20100064341A (en) * | 2008-12-04 | 2010-06-14 | 도쿄엘렉트론가부시키가이샤 | Substrate heating apparatus and substrate heating method |
JP2010140960A (en) * | 2008-12-09 | 2010-06-24 | Tokyo Electron Ltd | Heat treatment apparatus |
CN102842525A (en) * | 2011-06-21 | 2012-12-26 | 芝浦机械电子株式会社 | Heater unit, fan filter unit, and substrate processing apparatus |
CN105374711A (en) * | 2014-08-08 | 2016-03-02 | 东京毅力科创株式会社 | Substrate heating device and substrate heating method |
CN107481954A (en) * | 2016-05-24 | 2017-12-15 | 株式会社斯库林集团 | Substrate board treatment and substrate processing method using same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023069210A1 (en) * | 2021-10-22 | 2023-04-27 | Lam Research Corporation | Exhaust monitoring apparatus and method for substrate processing systems |
Also Published As
Publication number | Publication date |
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TW201939638A (en) | 2019-10-01 |
TWI712097B (en) | 2020-12-01 |
JP2019153738A (en) | 2019-09-12 |
KR20190106671A (en) | 2019-09-18 |
JP6990121B2 (en) | 2022-01-12 |
KR102195420B1 (en) | 2020-12-28 |
CN110233117B (en) | 2023-02-24 |
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