CN110233117B - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- CN110233117B CN110233117B CN201910040370.0A CN201910040370A CN110233117B CN 110233117 B CN110233117 B CN 110233117B CN 201910040370 A CN201910040370 A CN 201910040370A CN 110233117 B CN110233117 B CN 110233117B
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- exhaust pipe
- opening
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- plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The present invention relates to a substrate processing apparatus. The invention provides a substrate processing apparatus capable of accurately measuring exhaust pressure in an exhaust pipe even if gas containing sublimate is used. The sampling port 71 is provided in an exhaust pipe opening 77 of the exhaust pipe 51, and the exhaust pressure in the exhaust pipe 51 is measured by a pressure sensor 75. The sampling port 71 is provided with a rectifying plate 85 for covering the opening so that the opening is not visible. The rectifying plate 85 is provided so that the opening 81 communicates with the inside of the exhaust pipe 51 in a direction perpendicular to both the gas flow direction in the exhaust pipe 51 and the center axis of the opening 81, and therefore the exhaust pressure can be measured by the pressure sensor 75. Although sublimates contained in the gas adhere and accumulate on the upstream side of the rectifying plate 85, accumulation in the opening 81 can be suppressed, and the opening 81 can be closed. Even if the gas contains a sublimate, the exhaust pressure in the exhaust pipe 51 can be accurately measured.
Description
Technical Field
The present invention relates to a substrate processing apparatus for heat-treating various substrates (hereinafter, simply referred to as substrates) such as a semiconductor wafer, a substrate for a liquid crystal Display, a substrate for a plasma Display, a substrate for an organic EL (Electroluminescence) Display, a substrate for an FED (Field Emission Display), a substrate for a light Display, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, and a substrate for a solar cell.
Background
Conventionally, as such a device, there is a device including: a heat treatment plate for heating the substrate; a cover member configured to surround an upper portion of the heat treatment plate, to be movable up and down with respect to the heat treatment plate, and to form a heat treatment environment by the heat treatment plate; a case surrounding the heat treatment plate and the cover member; a top plate disposed between the top surface of the cover member and the upper surface of the heat treatment plate; and a position adjusting member that adjusts a distance between the lower surface of the top plate and the upper surface of the heat-treated plate (see, for example, patent document 1).
In such a substrate processing apparatus, the gas in the casing is exhausted. Specifically, the exhaust valve includes an exhaust pipe for exhausting gas from the inside of the case, and a pressure sensor for detecting a pressure in the exhaust pipe, and exhaust control is performed based on the pressure measured by the pressure sensor. The pressure sensor measures pressure through a sampling port provided in the exhaust pipe. Specifically, one end side of the sampling tube is attached to an opening portion communicating with the inside of the exhaust pipe, and the other end side is attached to a pressure sensor. When the opening is viewed from the direction of gas flow through the exhaust pipe, the opening is exposed at the opening of the exhaust pipe.
[ background Art document ]
[ patent document ]
[ patent document 1]
Japanese patent laid-open No. 2000-3843
Disclosure of Invention
[ problems to be solved by the invention ]
However, in the case of the conventional example having such a configuration, there are the following problems.
That is, recently, a lower layer film called a carbon film coating film is formed for a microfabrication process in some cases. The lower film is generated by a heat treatment at a high temperature, and at this time, a gas containing a sublimate is generated from the lower film. In the substrate processing apparatus configured as in the conventional apparatus, the sublimate adheres to the periphery of the opening portion, and is gradually deposited so as to close the opening portion, thereby preventing the detection of the pressure. Therefore, there is a problem that the exhaust pressure in the exhaust pipe cannot be accurately measured.
The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing apparatus capable of accurately measuring an exhaust pressure in an exhaust pipe even for a gas containing a sublimate.
[ means for solving the problems ]
The present invention adopts the following configuration to achieve such an object.
That is, the invention described in claim 1 is a substrate processing apparatus for performing a heat treatment on a substrate, and is characterized by comprising: a heat treatment plate on which the substrate is placed and which heats the substrate; a case covering an upper side of the heat treatment plate and forming a heat treatment environment by the heat treatment plate; an exhaust pipe that exhausts gas inside the case; an exhaust pipe opening portion formed in the exhaust pipe and communicating with an inside of the exhaust pipe; a sampling port provided at the opening of the exhaust pipe and used for detecting the exhaust pressure in the exhaust pipe; and a pressure sensor for measuring the pressure of the exhaust gas via the sampling port; and the sampling port is provided with: an opening portion communicating with the inside of the exhaust pipe at the exhaust pipe opening portion; and a rectifying plate that covers the opening portion so as not to be visible when the opening portion is viewed from an intersection of a flow direction of the gas in the exhaust pipe and an extension line of a center axis of the opening portion, and is provided so that at least one of the opening portion on a downstream side of the opening portion in the flow direction of the gas in the exhaust pipe communicates with an inside of the exhaust pipe in a direction orthogonal to both the flow direction of the gas in the exhaust pipe and the center axis of the opening portion.
[ MEANS FOR solving PROBLEMS ] according to the invention described in claim 1, a sampling port is provided in an exhaust pipe opening of an exhaust pipe for exhausting gas from a case covering an upper part of a heat treatment plate, and the exhaust pressure in the exhaust pipe is measured by a pressure sensor attached through the sampling port. The sampling port is provided with a rectifying plate which covers the opening part in a manner that the opening part can not be observed when the opening part is observed from the intersection point of the extending line of the central axis of the opening part and the flowing direction of the gas in the exhaust pipe. The rectifying plate is further provided so as to communicate with the inside of the exhaust pipe through at least one opening portion located downstream of the opening portion in the gas flow direction of the exhaust pipe in a direction perpendicular to both the gas flow direction in the exhaust pipe and the center axis of the opening portion, so that the exhaust pressure can be measured by a pressure sensor. Therefore, although the sublimates contained in the gas adhere and accumulate on the upstream side of the rectifying plate, accumulation in the opening portion can be suppressed, and the opening portion can be closed. As a result, even if the gas contains a sublimate, the exhaust pressure in the exhaust pipe can be accurately measured.
In the present invention, it is preferable that the rectifying plate has an inclined surface whose distance from the opening gradually increases from the upstream side toward the downstream side of the exhaust pipe when viewed from a direction orthogonal to both the gas flow direction in the exhaust pipe and the central axis of the opening (claim 2).
In the pipe facing the opening, a rectifying plate having a slope surface whose distance from the opening gradually increases from the upstream side to the downstream side is disposed, and therefore, the sublimate contained in the exhaust gas mainly adheres to the slope surface and is deposited. Further, since the exhaust pipe is connected to the downstream opening in the direction orthogonal to the gas flow direction or the gas flow direction, the pressure sensor can accurately measure the exhaust pressure via the sampling port.
In the present invention, it is preferable that the rectifying plate has a triangular cross section as viewed in a direction orthogonal to both a gas flow direction in the exhaust pipe and a central axis of the opening, and a vertex of the rectifying plate is attached to face the opening at an inner corner side thereof (claim 3).
In the exhaust pipe facing the opening, the rectifying plate is disposed in a triangular roof shape, and the inclined surface thereof faces the direction of gas flow. Therefore, the sublimates contained in the exhaust gas mainly adhere to and accumulate on the inclined surface facing the upstream and downstream sides thereof. Further, since the opening portion communicates with the exhaust pipe in a direction orthogonal to both the gas flow direction and the central axis of the opening portion, the pressure sensor can accurately measure the exhaust pressure via the sampling port.
In addition, in the present invention, it is preferable that: a block body having the opening; and a mounting member that detachably mounts the block to the exhaust pipe such that the opening faces the exhaust pipe opening; the rectifying plate is mounted on the exhaust pipe opening portion side of the block (claim 4).
When the attachment is removed, the block can be removed from the exhaust pipe, and therefore even if the sublimate adheres to the opening portion, the sublimate can be easily removed by maintenance. Therefore, by performing regular maintenance, the accuracy of the exhaust pressure can be maintained for a long period of time.
In the present invention, it is preferable that the block body has a measurement tube attachment portion formed on a surface opposite to the opening portion and communicating with the opening portion, and includes: a measurement tube having one end disposed on the measurement tube mounting portion of the block and the pressure sensor disposed on the other end; and a measurement tube attachment member that detachably attaches one end side of the measurement tube to the measurement tube attachment portion (claim 5).
When the measurement tube attachment member is removed, the measurement tube can be removed from the block, and therefore, even if the sublimate adheres to the inside of the measurement tube, the sublimate can be easily removed by maintenance. Therefore, by performing regular maintenance, the accuracy of the exhaust pressure can be maintained for a long period of time.
[ Effect of the invention ]
According to the substrate processing apparatus of the present invention, the sampling port is provided in the exhaust pipe opening of the exhaust pipe for exhausting gas from the housing covering the upper portion of the heat treatment plate, and the exhaust pressure in the exhaust pipe is measured by the pressure sensor attached through the sampling port. The sampling port is provided with a rectifying plate which covers the opening part in a manner that the opening part can not be observed when the opening part is observed from the intersection point of the extending line of the central axis of the opening part and the flowing direction of the gas in the exhaust pipe. The rectifying plate is further provided so as to communicate with the inside of the exhaust pipe through at least one opening portion located downstream of the opening portion in the gas flow direction of the exhaust pipe in a direction perpendicular to both the gas flow direction in the exhaust pipe and the center axis of the opening portion, and therefore the exhaust pressure can be measured by the pressure sensor. Therefore, although the sublimates contained in the gas adhere and accumulate on the upstream side of the rectifying plate, accumulation in the opening portion can be suppressed, and the opening portion can be closed. As a result, even if the gas contains a sublimate, the exhaust pressure in the exhaust pipe can be accurately measured.
Drawings
Fig. 1 is a schematic configuration diagram showing the overall configuration of a substrate processing apparatus according to an embodiment.
Fig. 2 is a plan view of the movable top plate.
Fig. 3 is a longitudinal sectional view showing the vicinity of the tip end of the lift pin.
Fig. 4 is a longitudinal sectional view showing the pressure detection unit.
Fig. 5 is a view of the pressure detection unit as viewed from the inside of the exhaust pipe.
Fig. 6 is a view of the pressure detection unit as viewed from the outside of the exhaust pipe.
Fig. 7 is a vertical sectional view showing a state where a substrate is carried in and out.
Fig. 8 is a vertical cross-sectional view showing a state in which the substrate is heated.
Fig. 9 is a longitudinal sectional view showing a first modification of the flow regulating plate 1.
Fig. 10 is a longitudinal sectional view showing a 2 nd modification of the rectifying plate.
Detailed Description
An embodiment of the present invention will be described below with reference to the drawings.
Fig. 1 is a schematic configuration diagram showing the entire configuration of a substrate processing apparatus according to an embodiment, fig. 2 is a plan view of a movable top plate, and fig. 3 is a vertical sectional view showing the vicinity of a tip end of an elevating pin.
The substrate processing apparatus 1 of the embodiment is an apparatus for performing heat treatment on a substrate W. Specifically, for the microfabrication process, for example, heat treatment is performed when forming an underlayer film called a coated carbon film. In order to form the lower layer film, heat treatment is performed at a high temperature of about 300 to 500 ℃.
The substrate processing apparatus 1 includes a lower base plate 3, a water-cooled base plate 5, a heat treatment plate 7, a movable top plate unit 9, a lift pin unit 11, a housing 13, and a shutter unit 15.
The substrate processing apparatus 1 carries a substrate W in from a transfer arm 17 disposed adjacent to each other, performs a heat treatment, and then carries out the treated substrate W by the transfer arm 17.
The lower floor 3 is provided with a pillar 19 standing on the upper surface, and the water-cooled floor 5 is disposed above the pillar 19. The water-cooled bottom plate 5 suppresses downward heat transfer from the heat-treated plate 7. Specifically, the water-cooled bottom plate 5 has a refrigerant passage 21 through which a refrigerant can flow, for example, formed entirely inside thereof. In the refrigerant passage 21, for example, cooling water is circulated as a refrigerant. The cooling water is adjusted to, for example, 20 ℃.
The heat-treated plate 7 has a circular shape in plan view. The diameter thereof is slightly larger than that of the substrate W. The heat treatment plate 7 incorporates a heating device such as a heater not shown, and is heated so that the surface temperature thereof becomes 400 ℃. The heat treatment plate 7 is disposed in a state of being separated upward from the water-cooled bottom plate 5 by a support column 23 provided between the lower surface thereof and the upper surface of the water-cooled bottom plate 5. The heat-treated plate 7 has through-holes 25 formed at positions corresponding to the respective apexes of the regular triangle in plan view.
A movable top plate unit 9 is attached to the heat treatment plate 7. The movable top plate unit 9 includes a lifting/lowering bottom plate 27, a lifting/lowering mechanism 29, a support column 31, and a movable top plate 33.
The lifting/lowering base plate 27 has an opening for avoiding interference with the support column 23 or a lifting/lowering pin 41 described below. The lifting mechanism 29 is constituted by, for example, an air cylinder. The lifting mechanism 29 is attached to the water-cooled floor 5 in close contact with the portion having the actuation shaft facing upward. The lift mechanism 29 can fix the height of the distal end of the actuating shaft at an arbitrary position. The operating shaft of the elevating mechanism 29 is connected to the bottom surface of the elevating base plate 27. If the actuating shaft of the lifting mechanism 29 is lifted, the height position of the lifting base plate 27 can be changed. The lifting base plate 27 is provided with 4 columns 31 on its upper surface, for example, vertically. Movable top plates 33 are attached to the upper ends of the 4 columns 31.
As shown in fig. 2, the movable top plate 33 has an opening 35 formed in the central portion thereof in a plan view. The opening 35 is formed smaller than the diameter of the substrate W in plan view. The movable top plate 33 is moved up and down together with the lifting/lowering base plate 27 by the lifting/lowering mechanism 29. The movable top plate 33 moves between a lowered position when the substrate W is heat-treated and a raised position when the substrate W is carried in. In addition, the distance between the upper surface of the substrate W and the lower surface of the movable top plate 33 is preferably about 10mm at the lowered position. This is because, as is found by experiments by the inventors, the distance is preferably set to improve the in-plane uniformity of the temperature distribution on the surface of the substrate W.
The movable top plate 33 has a rectangular shape whose diagonal length is longer than the diameter of the thermal processing plate 7. The 4 support columns 31 have their upper ends connected to four corners of the lower surface of the movable top plate 33. Four corners of the movable top plate 33 are located away from the heat treatment plate 7 having a circular shape in plan view as a heat source. Therefore, even if the movable top plate 33 is heated by the radiant heat of the heat treatment plate 7, the heat is less likely to be transmitted to the pillars 31. Therefore, the lifting mechanism 29 is less susceptible to the influence of heat, and the occurrence of a failure can be suppressed.
The movable top plate 33 preferably comprises a ceramic or an alloy of a metal and a ceramic. Thus, even if the heat treatment is performed at a high temperature, the deformation due to the heat can be prevented.
The lift pin unit 11 includes a drive mechanism 37, a lift ring 39, and 3 lift pins 41. The lift pins 41 are only 2 pins in the illustrated relationship.
The drive mechanism 37 is constituted by, for example, an air cylinder. The driving mechanism 37 is attached in a state where the portion having the actuating shaft faces downward and the opposite side is in close contact with the lower surface of the water-cooled bottom plate 5. The lift ring 39 is connected to the lower portion of the actuating shaft. On the upper surface of the lifting ring 39, 3 lifting pins 41 stand. The drive mechanism 39 can adjust the height position of its actuating shaft between two positions, namely, a delivery position (two-dot chain line in fig. 1) where 3 lift pins 41 project upward from the upper surface of the heat treatment plate 7 and a treatment position (solid line in fig. 1) where 3 lift pins 41 sink downward from the upper surface of the heat treatment plate 7. The 3 lift pins 41 are inserted into the through holes 25 formed in 3 places of the heat treatment plate 7.
The lift pin 41 is preferably configured as shown in fig. 3. The lift pin 41 includes a core 41a, an outer cylinder 41b, and a quartz ball 41c. The core portion 41a is formed such that a tip portion 41e located above the body portion 41d is smaller in diameter than the body portion 41 d. The outer cylinder 41b is formed with an inner diameter slightly larger than the outer diameter of the quartz ball 41c except for the distal end portion. The distal end of the outer cylinder 41b is formed to have an inner diameter smaller than the diameter of the quartz ball 41c. The diameter of the quartz ball 41c is slightly smaller than that of the tip portion 41 e. Therefore, if the outer cylinder 41b is covered with the quartz balls 41c placed on the upper surface of the distal end portion 41e, about 1/3 of the quartz balls 41c protrude from the outer cylinder 41 b. In this state, the lift pin 41 is configured by pressing the engagement pin 41g into the through hole 41f that penetrates the core 41d and the outer cylinder 41b, and thereby fixing the outer cylinder 41b to the core 41a together with the quartz ball 41c. The members other than the quartz balls 41c are made of metal.
Although quartz is preferable as a material that can withstand high temperature environments, it is difficult to make the entire lift pin 41 of quartz if strength and cost are taken into consideration. Therefore, as described above, the cost can be suppressed by making only the quartz ball 41c at the tip portion of the quartz ball of quartz. Further, since the quartz is slightly lower than the single crystal silicon which is a material of the substrate W, the lower surface of the substrate W is less likely to be damaged, and since the quartz is spherical, the contact area can be minimized.
The case 13 covers the heat treatment plate 7, and forms a heat treatment environment by the heat treatment plate 7. The housing 13 has a carrying-in/out port 43 formed in one surface thereof. The carrying-in/out port 43 opens upward from a height position near the upper surface of the heat-treated plate 7. The transfer arm 17 carries the substrate W in and out through the carry-in and carry-out port 43.
The shutter unit 15 is attached to the carrying-in/out port 43. The shutter unit 15 includes a drive mechanism 45 and a shutter body 47. The driving mechanism 45 is attached to the water-cooled bottom plate 5 in close contact with a portion of the actuating shaft facing upward. The shutter body 47 is connected to the upper portion of the actuating shaft. If the drive mechanism 45 extends the actuation shaft, the shutter body 47 is raised and the carrying-in/carrying-out port 43 is closed (solid line shown in fig. 1), and if the drive mechanism 45 contracts the actuation shaft, the shutter body 47 is lowered and the carrying-in/carrying-out port 43 is opened (two-dot chain line shown in fig. 1).
The housing 13 is formed with an exhaust port 49 at its top surface. The exhaust port 49 is connected to an exhaust pipe 51. The gap between the exhaust port 49 of the case 13 and the upper surface of the heat treatment plate 7 is, for example, about 30 mm. The exhaust pipe 51 is connected to an exhaust device 52. The exhaust device 52 is configured to be capable of adjusting the exhaust flow rate by an instruction from the outside. A pressure detection unit 53 is disposed in a part of the exhaust pipe 51. The pressure detection unit 53 detects the exhaust pressure in the exhaust pipe 51. The detailed configuration of the pressure detection unit 53 will be described later.
The housing 13 is provided with a package heater 55 along the upper surface of the exhaust pipe 51. The package heater 55 heats the casing 13 or the exhaust pipe 51, and prevents the sublimate from being attached to the inner wall of the casing 13 by cooling the gas when the gas containing the sublimate comes into contact with the casing 13.
The control Unit 61 is constituted by a CPU (Central Processing Unit) or a memory (not shown). The control unit 61 controls the temperature of the heat-treated plate 7, the elevation of the movable top board unit 9, the driving of the elevation pin unit 11, the opening and closing of the shutter unit 15, the temperature of the package heater 55, and the exhaust of the exhaust device 52 by the pressure detection unit 53. The control unit 61 can perform various operations on the lowering position in the control of raising and lowering the movable top unit 9 in accordance with the substrate W. For example, the lowering position of the movable top 33 is predetermined for a recipe that defines the processing conditions or sequence for each substrate W, and a parameter corresponding to the distance from the movable top 33 to the surface of the substrate W is indicated in advance for the recipe by operating an indicating unit, not shown. For example, when processing the substrate W, the control unit 61 refers to a recipe corresponding to the substrate W instructed by the apparatus operator, and operates the elevating mechanism 29 based on the parameter. This allows the lowering position of the movable top plate 33 to be adjusted for each substrate W.
Here, the detailed structure of the pressure detection unit 53 will be described with reference to fig. 4 to 6. Fig. 4 is a vertical cross-sectional view showing the pressure detection unit, fig. 5 is a view of the pressure detection unit as viewed from the inside of the exhaust pipe, and fig. 6 is a view of the pressure detection unit as viewed from the outside of the exhaust pipe.
The pressure detection unit 53 includes a sampling port 71, a measurement tube 73, and a pressure sensor 75.
The sampling port 71 connects the inside of the exhaust pipe 51 to the measurement pipe 73 and the pressure sensor 75. The sampling port 71 is specifically constructed as follows.
The sampling port 71 is formed in the exhaust pipe 51 and is attached to an exhaust pipe opening 77 communicating with the interior of the exhaust pipe 51. The sampling port 71 includes a block 79, an opening 81, a mounting member 83, and a rectifying plate 85.
The block 79 is formed with an opening 81. The block 79 has a plate-like appearance, and an opening 81 is formed near the center. The opening 81 penetrates the front and rear surfaces (left and right surfaces in fig. 4) of the block 79. The opening 81 is formed with a measurement tube mounting portion 87 formed with a slightly larger inner diameter on the right side than on the left side in fig. 4. At the upper and lower ends near the center in the surface (right side) of the block 79, a recess 89 for the mounting member 83 is formed. The mounting member 83 is attached to the concave portion 89, the block 79 is attached to the exhaust pipe 51 so that the opening 81 faces the exhaust pipe opening 77, and the block 79 covers the exhaust pipe opening 77. The mounting member 83 is exemplified by a hexagonal screw.
The block 79 is attached to a rectifying plate 85 so as to straddle the opening 81 from the upstream side to the downstream side of the opening 81 in the gas flow direction (indicated by an arrow in fig. 4 to 6) in the exhaust pipe 51. The rectifying plate 85 is disposed so as to cover the opening 81 in such a manner that, when the opening 81 is viewed from an intersection of the direction of flow of the gas in the exhaust pipe 51 and an extension line of the central axis of the opening 81, the opening 81 is not viewed as shown in fig. 5. Further, the rectifying plate 85 is provided so that the opening 81 communicates with the inside of the exhaust pipe 51 in a direction (fig. 4) perpendicular to both the gas flow direction in the exhaust pipe 51 and the central axis of the opening 81.
More specifically, the cross section viewed from a direction (fig. 4) orthogonal to both the gas flow direction in the exhaust pipe 51 and the central axis of the opening 81 is triangular. The apex thereof is attached so as to face the inner corner side thereof to the opening 81. That is, the rectifying plate 85 does not allow the opening 81 to be observed when the sampling port 71 side is observed from the viewpoint on the axis of the gas flowing from the upstream side to the downstream side with respect to the opening 81 in the exhaust pipe 51. In other words, when viewed from a direction orthogonal to both the gas flow direction in the exhaust pipe 51 and the central axis of the opening 81 as shown in fig. 4, the communication space 91 communicating with the opening 81 is formed. The communication space 91 in this case has a triangular shape in longitudinal section, and the distance from the opening 81 to the rectifying plate 85 gradually increases from the upstream side to the downstream side in the gas flow direction up to the center axis of the opening 81 when viewed from the direction shown in fig. 4.
One end of the measurement tube 73 is inserted into the measurement tube mounting portion 87 of the block 79. The measurement tube 73 is fixed by a tube clamp 93 attached to a surface on the opposite side of the exhaust tube 51 in the block 79. As shown in fig. 6, the pipe clamp 93 includes two split clamp pieces 93a and 93b and a clamp hole 93c formed therebetween. The clamp pieces 93a and 93b approach each other by screwing the fastening screw 95 screwed to only one of the clamp pieces 93a and 93b, and the measurement tube 73 is fixed by clamping the outer peripheral surface of the measurement tube 73 inserted into the clamp hole 93c. Further, the clamp pieces 93a and 93b are separated from each other by loosening the fastening screw 95, and the outer peripheral surface of the measurement tube 73 is opened from the clamp hole 93c, whereby the measurement tube 73 can be detached.
A pressure sensor 75 is attached to the other end of the measurement tube 73. The pressure sensor 75 measures the exhaust pressure of the gas in the exhaust pipe 51 via the measurement pipe 73, the opening 81, and the communication space 91. The exhaust gas pressure measured by the pressure sensor 75 is supplied to the control unit 61.
The tube clamp corresponds to the "measuring tube attachment" in the present invention.
Next, the processing of the substrate W in the substrate processing apparatus configured as described above will be described with reference to fig. 7 and 8. Fig. 7 is a vertical sectional view showing a state where the substrate is carried in and out, and fig. 8 is a vertical sectional view showing a state where the substrate is heated.
First, as shown in fig. 7, the control unit 61 operates the movable top unit 9 to move the movable top 33 to the raised position. Further, the control unit 61 operates the lift pin unit 11 to raise the 3 lift pins 41 to the transfer position. Together with these operations, the controller 61 operates the shutter unit 15 to open the carry-in/carry-out port 43.
Then, the controller 61 causes the transfer arm 17 to enter from the carrying-in/out port 43 in a state higher than the delivery position and lower than the lower surface of the movable top plate in the raised position, and lowers the transfer arm 17 above the heat-treated plate 7. Thereby, the substrate W is transferred to the lift pins 41 at the transfer position. Then, the transport arm 17 is retracted from the carrying-in/out port 43, and the shutter unit 15 is operated to close the carrying-in/out port 43.
Then, as shown in fig. 8, the control unit 61 operates the lift pin unit 11 to lower the 3 lift pins 41 to the processing position. Thus, the substrate W was subjected to a heat treatment at 400 ℃. The control unit 61 refers to the recipe and performs the heat treatment for a predetermined heating time.
When a specific heating time has elapsed, the control unit 61 operates the movable top plate unit 9 and the lift pin unit 11 to raise the movable top plate 33 to the raised position and raise the lift pins 41 to the joining position. Then, the controller 61 operates the shutter unit 15 to open the carry-in/carry-out port 43. Further, the control unit 61 causes the transfer arm 17 to enter the carrying-in/carrying-out port 43 from a position below the transfer position and above the upper surface of the thermal processing plate 7. Then, the transfer arm 17 is raised to a position higher than the delivery position and lower than the lower surface of the movable top plate 33, and the transfer arm 17 receives the processed substrate W from the lift pins 41. Then, the transfer arm 17 is retracted from the carry-in/out section 43, and the processed substrate W is carried out. During the above-described process, the control unit 61 operates the exhaust facility 52 based on the exhaust pressure in the exhaust pipe 51 detected by the pressure detection unit 53, and controls the flow rate of the exhaust gas in the exhaust pipe 51 to a specific value according to the process status.
The heat treatment for one substrate W is completed by the series of operations, but when a new substrate W is to be treated, the control unit 61 may refer to a recipe instructed by the apparatus operator, for example, and instruct the recipe as to the position at which the movable top 33 is raised by the movable top unit 9.
According to the present embodiment, the sampling port 71 is provided at the exhaust pipe opening 77 of the exhaust pipe 51, and the exhaust pressure in the exhaust pipe 51 is measured by the pressure sensor 75 attached through the sampling port 71. The sampling port 71 includes a rectifying plate 85, and the rectifying plate 85 covers the opening so that the opening is not visible when the opening is observed from an intersection of an extension line of the central axis of the opening 81 and a flow direction of the gas in the exhaust pipe 51. The rectifying plate 85 is further provided so that the opening 81 communicates with the inside of the exhaust pipe 51 in a direction perpendicular to both the gas flow direction in the exhaust pipe 51 and the center axis of the opening 81, and therefore the exhaust pressure can be measured by the pressure sensor 75. Therefore, although the sublimates contained in the gas adhere to and accumulate on the upstream side of the rectifying plate 85, the sublimates can be prevented from accumulating in the opening 81 to close the opening 81. As a result, even if the gas contains a sublimate, the exhaust pressure in the exhaust pipe 51 can be accurately measured.
Further, according to the rectifying plate 85 of the present embodiment, the following effects are obtained.
That is, in the exhaust pipe 51 facing the opening 81, the rectifying plate 85 is disposed in a triangular roof shape, and the inclined surface thereof faces the flow direction of the gas. Therefore, the sublimates contained in the exhaust gas mainly adhere to and accumulate on the inclined surfaces facing the upstream and downstream sides thereof. Further, since the opening 81 communicates with the exhaust pipe 51 in a direction perpendicular to both the gas flow direction and the central axis of the opening 81, the pressure sensor 75 can accurately measure the exhaust pressure via the sampling port 71.
Further, when the attachment 83 is removed, the block 79 can be removed together with the rectifying plate 85 from the exhaust pipe 51, so that even if the sublimates adhere to the rectifying plate 85 or the opening 81, the sublimates can be easily removed by maintenance. Therefore, by performing regular maintenance, the accuracy of the exhaust gas pressure can be maintained for a long period of time. Further, since the measurement tube 73 can be removed from the block 79 when the tube clamp 93 is loosened, even if the sublimate adheres to the inside of the measurement tube 73, the sublimate can be easily removed by maintenance. Therefore, by performing regular maintenance, the accuracy of the exhaust pressure can be maintained for a long period of time.
< variation 1 >
Here, another embodiment of the rectifying plate 85 will be described with reference to fig. 9. Fig. 9 is a longitudinal sectional view showing a first modification of the flow regulating plate 1.
The rectifying plate 85A covers the opening 81 so that the opening 81 is not visible when the opening 81 is viewed from an intersection of an extension line of a central axis of the opening 81 and a flow direction of the gas in the exhaust pipe 51. Further, the rectifying plate 85A is provided so as to communicate with the inside of the exhaust pipe 51 not only in a direction orthogonal to both the gas flow direction in the exhaust pipe 51 and the central axis of the opening 81 but also in the downstream side of the opening 81 in the gas flow direction of the exhaust pipe 51. In other words, the rectifying plate 85A is formed such that the inclined surface gradually separates from the wall surface of the exhaust pipe 51 toward the center of the exhaust pipe 51. The downstream end extends downstream of the downstream peripheral edge of the opening 81. The rectifying plate 85A can have a simpler configuration than the rectifying plate 85, and can also prevent the sublimates from depositing in the opening 81 and closing the opening 81, as in the above-described embodiment.
< variation 2 >
Here, another embodiment of the rectifying plates 85 and 85A will be described with reference to fig. 10. Fig. 10 is a longitudinal sectional view showing a modification 2 of the flow regulating plate.
The rectifying plate 85B is provided so as to communicate with the inside of the exhaust pipe 51 through the opening 81 on the downstream side of the opening 81 in the gas flow direction of the exhaust pipe 51. The rectifying plate 85B is formed in a hood shape that opens only on the downstream side of the exhaust gas. Like the above-described embodiment, the rectifying plate 85B can prevent the sublimates from being deposited on the opening 81 and closing the opening 81. Further, since the inclined surface is supported by the plate-like member on the side surface, the mechanical strength can be improved.
The present invention is not limited to the above embodiment, and can be variously implemented as follows.
(1) In the above embodiment, the movable top plate 33 is provided, but the present invention does not necessarily have this configuration. That is, the present invention can be applied to a substrate processing apparatus provided with an exhaust pipe 51 for exhausting gas in the housing 13 forming a heat treatment atmosphere and detecting an exhaust pressure thereof.
(2) In the above embodiment, the block 79 is detachably attached to the exhaust pipe 51 by the attachment 83, but the present invention is not limited to this configuration. For example, the block 79 and the exhaust pipe 51 may be configured to be detachable by a fastener (a fastener). Further, the sampling port 71 may be fixedly attached to a part of the exhaust pipe 51, and the part of the exhaust pipe 51 may be detachably attached to the exhaust pipe 51.
(3) In the above embodiment, the measurement tube 73 is detachably attached to the block 79 by the tube clamp 93. However, the present invention does not require the pipe clamp 93. For example, the measuring tube 73 may be mounted in the block 79 in a non-removable manner.
[ description of symbols ]
1. 1A substrate processing apparatus
W substrate
3. Lower bottom plate
5. Water-cooled bottom plate
7. Heat-treated plate
9. Movable top plate unit
11. Lift pin unit
13. Shell body
15. Baffle unit
29. Lifting mechanism
33. Movable top plate
35. Opening of the container
37. Driving mechanism
41. Lifting pin
43. Carry-in/carry-out port
47. Baffle body
51. Exhaust pipe
53. Pressure detection unit
61. Control unit
71. Sampling port
73. Measuring tube
75. Pressure sensor
77. Exhaust pipe opening
79. Block body
81. Opening part
83. Mounting member
85. 85A, 85B cowling panel
87. Measuring tube mounting part
93. Pipe clamp
Claims (5)
1. A substrate processing apparatus for performing heat treatment on a substrate, comprising:
a heat treatment plate on which the substrate is placed and which heats the substrate;
a case covering an upper side of the heat treatment plate and forming a heat treatment environment by the heat treatment plate;
an exhaust pipe that exhausts the gas inside the case;
an exhaust pipe opening portion formed in the exhaust pipe and communicating with the inside of the exhaust pipe;
a sampling port provided at the opening of the exhaust pipe and used for detecting the exhaust pressure in the exhaust pipe; and
a pressure sensor for measuring the pressure of the exhaust gas via the sampling port; and is
The sampling port includes:
an opening communicating with the inside of the exhaust pipe at the exhaust pipe opening; and
and a rectifying plate that covers the opening portion so that the opening portion is not visible when the opening portion is viewed from an intersection of a flow direction of the gas in the exhaust pipe and an extension line of a center axis of the opening portion, and that is provided so that at least one of the opening portion on a downstream side of the opening portion in the flow direction of the gas in the exhaust pipe communicates with an inside of the exhaust pipe in a direction orthogonal to both the flow direction of the gas in the exhaust pipe and the center axis of the opening portion.
2. The substrate processing apparatus according to claim 1, wherein:
the rectifying plate has an inclined surface that gradually increases in distance from the opening portion from an upstream side toward a downstream side of the exhaust pipe when viewed from a direction orthogonal to both a gas flow direction in the exhaust pipe and a central axis of the opening portion.
3. The substrate processing apparatus according to claim 1 or 2, wherein:
the rectifying plate has a triangular cross section when viewed from a direction orthogonal to both a gas flow direction in the exhaust pipe and a central axis of the opening, and a vertex of the rectifying plate is attached so as to face an inner corner side of the rectifying plate to the opening.
4. The substrate processing apparatus according to claim 1, comprising:
a block body having the opening; and
a mounting member that detachably mounts the block to the exhaust pipe such that the opening faces the exhaust pipe opening; and is provided with
The rectifying plate is mounted on the exhaust pipe opening portion side of the block.
5. The substrate processing apparatus according to claim 4, wherein:
the block body is provided with a measuring tube mounting part communicated with the opening part on the opposite surface of the opening part, and is provided with:
a measurement tube having one end side disposed on the measurement tube mounting portion of the block and the pressure sensor disposed on the other end side; and
and a measurement tube attachment member that detachably attaches one end side of the measurement tube to the measurement tube attachment portion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-039544 | 2018-03-06 | ||
| JP2018039544A JP6990121B2 (en) | 2018-03-06 | 2018-03-06 | Board processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110233117A CN110233117A (en) | 2019-09-13 |
| CN110233117B true CN110233117B (en) | 2023-02-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910040370.0A Active CN110233117B (en) | 2018-03-06 | 2019-01-16 | Substrate processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6990121B2 (en) |
| KR (1) | KR102195420B1 (en) |
| CN (1) | CN110233117B (en) |
| TW (1) | TWI712097B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023069210A1 (en) * | 2021-10-22 | 2023-04-27 | Lam Research Corporation | Exhaust monitoring apparatus and method for substrate processing systems |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201939638A (en) | 2019-10-01 |
| TWI712097B (en) | 2020-12-01 |
| JP2019153738A (en) | 2019-09-12 |
| KR20190106671A (en) | 2019-09-18 |
| JP6990121B2 (en) | 2022-01-12 |
| CN110233117A (en) | 2019-09-13 |
| KR102195420B1 (en) | 2020-12-28 |
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