CN101392374B - Double temperature control hydrofluoric acid vapor etching device - Google Patents
Double temperature control hydrofluoric acid vapor etching device Download PDFInfo
- Publication number
- CN101392374B CN101392374B CN2008102257058A CN200810225705A CN101392374B CN 101392374 B CN101392374 B CN 101392374B CN 2008102257058 A CN2008102257058 A CN 2008102257058A CN 200810225705 A CN200810225705 A CN 200810225705A CN 101392374 B CN101392374 B CN 101392374B
- Authority
- CN
- China
- Prior art keywords
- temperature control
- hydrofluoric acid
- reaction cavity
- reaction
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention discloses a double temperature-control hydrofluoric acid vapor etching device, which is an etching device that can respectively control the temperatures of a reactant and a silicon chip substrate. The main structure of the hydrofluoric acid vapor etching device provided by the invention comprises a reaction cavity which can adjust the temperature and control the uniformity of working gas, a sample console and a temperature control liquid cavity which can conduct temperature control over samples by the use of temperature control liquid and a corresponding transport channel. The concentration and the pressure of working substances can be controlled by the way that the reaction cavity is heated to control the volatilizezing speed of the hydrofluoric acid. The temperature control liquid cavity is connected with the sample console through the transport channel so as to realize the direct temperature control of the sample console. With the ability to respectively heat the reaction cavity and the temperature control liquid cavity, the etching device can control parameters of reacting gas and the local working temperature of the samples so as to effectively and flexibly control and select the vapor etching speed and the etching quality of the hydrofluoric acid as well as meet the requirements of micro-processing and nano-processing of special structures.
Description
Technical field
The present invention relates to double temperature control hydrofluoric acid vapor etching device, particularly a kind of etching device controlled respectively to the temperature of reaction body and silicon chip substrate.
Background technology
In the manufacture process of semiconductor device, the formation of silicon chip surface figure mainly relies on photoetching and etching two big modules.The purpose of photoetching is to form required photoresist figure at silicon chip surface, and etching then is right after thereafter accurately on the figure transfer of the photoresist thin layer on substrate or the substrate.In general etching comprises dry etching and two kinds of main lithographic methods of wet etching.Dry etching is exactly to utilize gas discharge to produce plasma to carry out the lithographic technique that film shifts out, and its shortcoming is the generation etching injury and costs an arm and a leg.And wet etching is traditional method of examination, exactly silicon chip is immersed in the certain chemical reagent or reagent solution, make not that a part of film surface sheltered by resist and reagent generation chemical reaction and be removed, its shortcoming is that the anisotropy of chemical reaction is relatively poor, thereby and etching rear film and micro-structural exist residual stress to cause film and micro-structural to be sticked together.In order to have solved this problem, in " the Characterization of anhydrous HF gas-phase etching with CH3OH for sacrificial oxideremoval " literary composition in 1998 the 64th phases " Sensors and Actuators A " last 27 to 32 pages, a kind of device that is used for hydrofluoric acid gas phase etching has been built in people such as Jong Hyun Lee design.
The apparatus structure of people such as Jong Hyun Lee design comprises reaction chamber, gas delivery system, vacuum exhaust, mass spectrometer and master controller as shown in Figure 1.Reaction chamber is made of aluminum, the etch-proof poly tetrafluoroethylene of surface coverage one deck.Hydrogen fluoride and other gases enter reaction chamber by shower nozzle after by mass flow controller again.Thick line partly reduces the degree of condensing in can heating on the way.The flow velocity of anhydrous hydrogen fluoride is controlled by mass flow controller, and other gases (as methyl alcohol or isopropyl alcohol) enter diffuser by the injected nitrogen gas carrier and control.The air pressure of needle valve control diffuser, dry pump are used for protecting the aluminum reaction chamber to avoid the corrosive gas corrosion.Mass spectrometer is used for quantitative analysis gas content and observe byproduct in the etching process.But this device is built by several major parts, and is too complicated.
Summary of the invention
The objective of the invention is to deficiency and defective, provide a kind of volume little, simple in structure, the double temperature control hydrofluoric acid vapor etching device of being convenient to operate at the prior art existence.
Technical scheme of the present invention is as follows:
A kind of double temperature control hydrofluoric acid vapor etching device is characterized in that: this device contains support, reaction cavity, is arranged on sample stage, temperature control liquid chamber, heater and control display unit in the reaction cavity; Described reaction cavity is made up of reaction cavity loam cake and spherical wall two parts; Described temperature control liquid chamber is provided with transmission channel, and described sample stage is connected with the temperature control liquid chamber by transmission pipeline; Described heater is made up of reaction chamber heater that is separately positioned on reaction chamber and temperature control liquid chamber bottom and temperature control fluid chamber heater; Described control display unit is made up of reaction cavity control display unit and temperature control liquid chamber control display unit; The reaction cavity loam cake is by reaction chamber rotating shaft and described support and spherical wall hinge, and the temperature control liquid chamber is by rotating shaft of temperature control fluid chamber and described stand hinge.
The described heater of the present invention institute adopts electric jacket.
The present invention has the following advantages and the high-lighting effect: the present invention is owing to can heat respectively reaction cavity and temperature control liquid chamber, can control local working temperature on reacting gas parameter and the sample simultaneously, thereby effectively and neatly control and select hydrofluoric acid gas phase etching speed and etching quality, satisfy the micron/nano processing request of special construction.Because reaction cavity is opened by the reaction chamber rotating shaft, therefore sample stage and temperature control liquid chamber can, have advantages such as simple in structure, easy to operate around temperature control fluid chamber rotating shaft rotation simultaneously.
Description of drawings
Fig. 1 is the structural representation of the hydrofluoric acid vapor etching device of prior art.
Fig. 2 is the cutaway view of double temperature control hydrofluoric acid vapor etching device embodiment provided by the invention.
Among the figure: 1-reaction chamber lid; The 2-reaction cavity; The rotating shaft of 3-reaction chamber; The 4-sample stage; 5-temperature control liquid chamber; The rotating shaft of 6-temperature control fluid chamber; 7a-reaction cavity heater; 7b-temperature control liquid chamber heater; 8a-reaction cavity control display unit; 8b-temperature control liquid chamber control display unit; The 9-support; 10-temperature control fluid chamber chamber cap.
Embodiment
Below in conjunction with accompanying drawing, further describe concrete structure of the present invention, operation principle and the course of work.
Referring to Fig. 2.Hydrofluoric acid vapor etching device of the present invention comprises and contains support 9, reaction cavity 2, is arranged on sample stage 4, reaction cavity loam cake 1, temperature control liquid chamber 5, the heater in the reaction cavity and controls display unit; Described temperature control liquid chamber 5 is provided with transmission channel, and described sample stage 4 is connected with temperature control liquid chamber 5 by transmission pipeline; Described heater is made up of reaction chamber heater 7a that is separately positioned on reaction chamber and temperature control fluid chamber bottom and temperature control fluid chamber heater 7b; Reaction cavity upper cover is by reaction chamber rotating shaft 3 and described stand hinge, and temperature control liquid chamber 5 is by temperature control fluid chamber rotating shaft 6 and described stand hinge; Described control display unit is made up of reaction cavity control display unit 8a and temperature control liquid chamber control display unit 8b.
Reaction chamber lid 1 can be opened by rotating shaft.Sample stage 4 links to each other with temperature control liquid chamber 5 by transmission pipeline, can open by temperature control fluid chamber rotating shaft 6.The ball wall of reaction cavity and reaction chamber lid 1 have formed reaction cavity, and silicon chip to be etched is placed on the sample stage 4, and sample stage is suspended in the reaction cavity 2, and the Qi Tai bottom surface remains on more than the liquid level.
In the present embodiment, heater is selected electric jacket equipment for use, and this electric jacket equipment comprises electric jacket 7.And controller and display part have been selected the KSC Series P ID automation control apparatus of Beijing Collihigh Sensor Technology Center for use.Wherein, controller is by the temperature of PID automation control apparatus control electric jacket, and electric jacket feeds back Current Temperatures in real time in controller, the Current Temperatures that the display part is used to set heating-up temperature and shows electric jacket in real time.The electric jacket device that this example is selected for use is supported 0 ℃-60 ℃ temperature range.
Open reaction chamber lid 1 during use, rotate temperature control fluid chamber rotating shaft 6, hydrofluoric acid is poured in the reaction cavity 2, then silicon chip is contained on the sample stage 4, the reaction chamber that closes lid 1 is opened temperature control fluid chamber chamber cap 10 water of packing into.Reaction cavity 2 and temperature control liquid chamber 5 are heated respectively, and the evaporation rate of control hydrofluoric acid obtains better etching result thereby can control etch period more accurately by the hydrofluoric acid gas phase etching speed under the measurement different temperatures.
Claims (2)
1. double temperature control hydrofluoric acid vapor etching device is characterized in that: this device contains support (9), reaction cavity (2), is arranged on sample stage (4), temperature control liquid chamber (5), heater and control display unit in the reaction cavity; Described reaction cavity is made up of reaction cavity loam cake and spherical wall two parts; Described temperature control liquid chamber (5) is provided with transmission channel, and described sample stage (4) is connected with temperature control liquid chamber (5) by transmission pipeline; Described heater is made up of reaction chamber heater (7a) that is separately positioned on reaction chamber and temperature control liquid chamber bottom and temperature control fluid chamber heater (7b); Described control display unit controls display unit (8a) by reaction cavity and temperature control liquid chamber control display unit (8b) is formed; The reaction cavity loam cake is by reaction chamber rotating shaft (3) and described support and spherical wall hinge, and temperature control liquid chamber (5) is by temperature control fluid chamber rotating shaft (6) and described stand hinge.
2. double temperature control hydrofluoric acid vapor etching device according to claim 1 is characterized in that: described heater adopts electric jacket.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102257058A CN101392374B (en) | 2008-11-07 | 2008-11-07 | Double temperature control hydrofluoric acid vapor etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102257058A CN101392374B (en) | 2008-11-07 | 2008-11-07 | Double temperature control hydrofluoric acid vapor etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101392374A CN101392374A (en) | 2009-03-25 |
| CN101392374B true CN101392374B (en) | 2010-09-22 |
Family
ID=40492879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102257058A Expired - Fee Related CN101392374B (en) | 2008-11-07 | 2008-11-07 | Double temperature control hydrofluoric acid vapor etching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101392374B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011035748A1 (en) * | 2009-09-22 | 2011-03-31 | Rena Gmbh | Method and device for etching back a semiconductor layer |
| CN103681299A (en) * | 2012-09-10 | 2014-03-26 | 洛阳鼎晶电子科技有限公司 | Chemical etching device used for manufacturing ultrathin silicon single chip |
| CN102891108B (en) * | 2012-10-24 | 2015-12-02 | 京东方科技集团股份有限公司 | A kind of manufacture method of array base palte |
| CN106409672A (en) * | 2015-07-28 | 2017-02-15 | 中国科学院微电子研究所 | Method and apparatus for etching semiconductor substrate |
| US11107699B2 (en) | 2016-10-08 | 2021-08-31 | Beijing Naura Microelectronics Equipment Co., Ltd. | Semiconductor manufacturing process |
| CN107919298B (en) | 2016-10-08 | 2021-01-29 | 北京北方华创微电子装备有限公司 | Gas phase etching device and equipment |
| CN107352501B (en) * | 2017-07-05 | 2019-04-19 | 中北大学 | TMAH silicon is atomized gas phase etching system |
| CN107445136B (en) * | 2017-07-05 | 2019-04-19 | 中北大学 | Silicon etching system based on gas phase TMAH |
-
2008
- 2008-11-07 CN CN2008102257058A patent/CN101392374B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101392374A (en) | 2009-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101392374B (en) | Double temperature control hydrofluoric acid vapor etching device | |
| Zhong et al. | Effects of surface free energy and nanostructures on dropwise condensation | |
| TW201041065A (en) | Vertical heat processing apparatus and component for same, for forming high dielectric constant film | |
| CN102317168A (en) | Method for treating inside surface of glass container, and glass container | |
| CN106783692B (en) | A kind of processing unit (plant) of micro-structural etching | |
| JP2011089728A (en) | Gas temperature and relative humidity control method and gas supply device | |
| CN104129752A (en) | Manufacturing method of cross-scale micro-nano folded structure | |
| CN105642206A (en) | Beryllium-water reaction device | |
| CN103762160B (en) | Deep silicon etching method | |
| WO2019144730A1 (en) | Rotary evaporator capable of accurately quantifying concentrated liquid and/or distillate | |
| CN105699165B (en) | Automatic sample is cleared up and preparing instrument | |
| CN101308082B (en) | Experimental device for static state high-temperature naphthenic acid erosion | |
| CN201942671U (en) | Fully automatic working station for polymerase chain reaction amplification | |
| CN205280470U (en) | Appearance is cleared up to intelligent high efficiency of supersound perspective | |
| CN104888626A (en) | Preparation method of degradable polylactic acid microporous membrane | |
| CN206022323U (en) | A kind of etching apparatus after soi wafer chamfering | |
| CN201024211Y (en) | Vacuum evaporation physical vapour deposition film growth device | |
| CN205146272U (en) | Accuse temperature stirring heating water bath | |
| CN107226719A (en) | The application of a kind of preparation method of graphene oxide membrane and its graphene oxide membrane of preparation in the dehydration of high concentration ethylene glycol solution | |
| JP3745140B2 (en) | Substrate processing equipment | |
| CN106486609B (en) | A kind of method that liquid phase prepares ultra-thin two-dimension electrical functionality film | |
| CN211376583U (en) | In-situ physicochemical reaction sample table of scanning electron microscope | |
| CN107039315A (en) | Grain size monitoring device and grain size monitoring method in producing line | |
| CN105340073A (en) | Method and device for treating a substrate surface | |
| US6519869B2 (en) | Method and apparatus for drying semiconductor wafers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100922 Termination date: 20151107 |
|
| EXPY | Termination of patent right or utility model |