CN107352501B - TMAH silicon is atomized gas phase etching system - Google Patents
TMAH silicon is atomized gas phase etching system Download PDFInfo
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- CN107352501B CN107352501B CN201710539774.5A CN201710539774A CN107352501B CN 107352501 B CN107352501 B CN 107352501B CN 201710539774 A CN201710539774 A CN 201710539774A CN 107352501 B CN107352501 B CN 107352501B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00619—Forming high aspect ratio structures having deep steep walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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Abstract
The present invention discloses a kind of TMAH silicon atomization gas phase etching system, comprising: water-cooling system is for condensing TMAH gas；For etching system for etching monocrystalline silicon and reaching related etching condition, when etching silicon wafer, etches the intracavitary temperature used higher than TMAH boiling point, makes TMAH in performing etching in the state of gaseous state to silicon；Conveyer system is used for transmission and etching silicon wafer；Atomization system guarantees etching stability by providing concentration more stable TMAH gas for TMAH solution atomizing type to etch chamber for generating and conveying TMAH drop；Control system is for controlling water-cooling system, etching system, atomization system and conveyer system co-ordination.The system realizes that silicon high speed etches, while etching surface is relatively smooth；Gas phase is etching through the air pressure for increasing etching cavity to further increase etch rate.The system is realized to realize structure on the non-etched surface of silicon wafer and is effectively protected, and ensure that silicon etching process and to complete the compatibility between technique.
Description
Technical field
The invention belongs to field of semiconductor manufacture, it is specifically a kind of based on TMAH to the atomization gas phase etching system of silicon.
Background technique
MEMS(Micro EIectro-Mechanical System, microelectromechanical systems) technology is in semiconductor system
Make one kind for technically growing up can batch micro operations microsensor, microactrator, signal processing and control circuit etc. in one
Manufacturing technology.MEMS technology mainly includes the works such as photoetching, etching, bonding, film growth, LIGA, silicon micromachined, non-silicon processing
Skill process.
Silicon face etching and body silicon etching are the critical process in MEMS technology, and currently used etching mode can be divided into
Dry etching and wet etching.Wet etching mainly uses KOH and TMAH(Tetramethylammonium Hydroxide) etc.
Alkaline solution is chemically reacted with silicon, to realize the anisotropic etching to silicon.KOH have faster etch rate, compared with
Good etching homogeneity；The but SiO in the solution2It is smaller with the selection of silicon, meanwhile, wherein the K+ ion contained cannot be with
CMOS technology is compatible.Metal ion is not contained in TMAH, can be compatible with CMOS technology, while to SiO2With biggish selection
Than, thus, TMAH is just gradually replacing other alkaline solutions to become the main etching liquid in MEMS technology in recent years.Dry etching master
To use ICP(Inductively Coupled Plasma), RIE(Reactive Ion Etching), DRIE(Deep
Reactive Ion Etching) etc. technologies to silicon carry out physical chemistry etching, mainly include reactive ion bombard etching surface
And reaction gas and etching surface substance reaction.
Dry etching is controlled with preferable line width, good sidewall profile control；But dry etching exists to lower layer
The disadvantages of etching selection of material is poor, plasma body induction damage, higher cost.Although cost is relatively low for wet etching,
It is that structure is exposed in aqueous slkali, it is compatible there is a problem of that each step process process is difficult to.Especially during the deep etching of silicon,
The shortcomings that both the above lithographic technique, will further show, while the problem poor compared with, uniformity there is also etching surface quality.
Summary of the invention
It is an object of the present invention to provide a kind of TMAH silicon to be atomized gas phase etching system, and the etching system is using one kind between wet process
Silicon etching technology between etching and dry etching may be implemented mainly for the back chamber deep etching process of silicon substrate MEMS device
Can be good at guaranteeing while inexpensive compatible, the good etching surface quality of technique, higher etch rate and
Etching homogeneity, while also achieving the protection of non-etched surface structure.
The present invention is achieved by the following technical scheme:
Wafer is placed in a kind of TMAH silicon atomization gas phase etching system, including atomization chamber and etch chamber, the etch chamber top surface
Fixture simultaneously closes sealing by back-protective chamber lid；It is connected between the atomization chamber and etch chamber by atomized drop delivery pipe, institute
State installation atomization flow valve in atomized drop delivery pipe；TMAH solution is contained in the atomization chamber and its bottom surface installation ultrasound is changed
It can device and aerophor；The etch chamber is connect by return pipe with condensation chamber import, and return valve, institute are installed on the return pipe
Condensation chamber outlet connection liquid return tube is stated, the liquid return tube protrudes into atomization chamber and submerges in TMAH solution, the liquid
Vent gas treatment interface is connected on return pipe；The condensation chamber connects water cooling with cooling water return pipe road by cooling water inlet pipe road
Machine.
The etch chamber and back-protective cavity wall are provided with heater strip, the intracavitary installation back-protective of back-protective
Chamber temperature sensor；Installation etch chamber temperature sensor and etch chamber pressure sensor in the etch chamber；In the atomization chamber
Nebulizer pressure sensor is installed.
The atomization chamber connects nitrogen pipeline I, installs nitrogen flow valve I in the nitrogen pipeline I；The etch chamber connection
Nitrogen pipeline II installs nitrogen flow valve II in the nitrogen pipeline II；The nitrogen pipeline I and nitrogen pipeline II simultaneously connect after connecing
Connect source nitrogen.
The TMAH liquid that concentration is higher than 25% is packed into atomization chamber.Back-protective chamber is opened, wafer fixture is placed on etching
Then surface protection chamber is covered in etch chamber by chamber top surface, fixture separates back-protective chamber and etch chamber.System
Work mainly includes being switched on, initializing, send piece, etch, taking 5 steps of piece.Wherein the main completion of initialization, which detects the equipment, is
The switch of no normal and each valve, heater strip；Condition is provided for next step etching.Etching process can be divided into etching initialization, send
Piece, building etching condition, etching, etching terminate and take the several processes of piece.Etching initialization is main to be completed to open water cooling unit, is opened
Atomization system and each chamber valve of closing, wherein opening atomization system mainly includes opening ultrasonic transducer, opening aerophor.
Building etching condition mainly includes heating etch chamber and back-protective chamber, stablizes its temperature at 120 DEG C or so.Master when etching
It needs to adjust nitrogen flow valve I, gas backstreaming valve and the heater strip heating power for connecting atomization chamber, to reach stable etch chamber pressure
The purpose and building atomization cavity pressure of power and temperature are greater than the condition of etching cavity pressure.When etching duration reaches default etching
Between when, the atomization flow valve that is first shut off on atomized drop transfer pipeline and stop heating, next open connection etch chamber
Nitrogen pipeline II above nitrogen flow valve II be passed through nitrogen purging etching cavity, it is to be purged after execute take piece program.
In the booting temperature rise period, TMAH solution, and the indoor temperature of real-time monitoring chamber and air pressure are heated using biggish heating power, is led to
Cross judge actual temperature and target temperature difference adjustment heating power, thus make temperature it is stable rise to target temperature；Simultaneously
Reflux valve opening is adjusted, atomization chamber temperature and air pressure is made to maintain a relatively steady state.Etch chamber temperature mainly passes through tune
The heating power of heater strip around etch chamber and back-protective chamber is saved to guarantee to etch required temperature (120 DEG C)；Etch chamber air pressure
The main aperture by adjusting return valve and the atomization flow valve on atomized drop transfer pipeline is to stablize etch chamber air pressure.Etching
Chamber vaporizes quickly in this temperature condition, the TMAH drop of atomization, to realize the purpose of gas phase etching.
System stablize after, TMAH atomized liquid enters etch chamber by atomized drop delivery pipe, the TMAH drop after atomization into
Enter temperature higher than being vaporized quickly after the etch chamber of TMAH boiling point, realizes and the gas phase of monocrystalline silicon is etched.Etch chamber is provided with temperature
Sensor and pressure sensor are spent, for monitoring the temperature and air pressure of etch chamber, back-protective chamber is provided with temperature sensor
Detect the temperature of silicon chip back side；Control system adjusts etch chamber and the back side in conjunction with the return data of atomization chamber pressure sensor
The heating power of chamber heater strip is protected, while adjusting the valve on atomization chamber transfer pipeline, provides phase to be reached for etching process
To stable etching temperature and air pressure.TMAH gas flows back to mist into condensation chamber by return line after condensing in etch chamber
Change chamber.It is about 20 DEG C that water cooling unit, which controls cooling water temperature, and providing power flows through cooling water by cooling water circulation pipe
Cooling cavity outer wall, to achieve the purpose that condense TMAH gas.Condensed TMAH liquid is back to atomization by liquid return tube
Chamber, remaining tail gas (mainly includes N2H is generated with reaction2) pass through vent gas treatment Pipeline transport to exhaust gas processing device.
Present system gas phase etching, as etching agent, uses 60 DEG C to 90 with common wet etching using TMAH gas
DEG C temperature range difference, TMAH gas phase etching are mainly utilized that (100 DEG C -110 DEG C, TMAH boiling point has with concentration higher than its boiling point
Close) it is lower than the temperature range of its decomposition temperature (130 DEG C), usually using 110 DEG C -125 DEG C.In the humidity province for being higher than TMAH boiling point
In, etching surface is in TMAH gaseous environment, and silicon is chemically reacted with alkali, to carry out anisotropic etch to silicon.
When using TMAH to<100>crystal orientation monocrystalline silicon etching, in the TMAH solution that concentration is 4% etch rate it is maximum (about 1 μm/
Min), while to etch surface roughness also larger (hundreds of nanometers).Under conditions of TMAH concentration is greater than 4%, the etch rate of silicon
Increase with TMAH concentration and reduce, etching surface roughness increases with concentration and reduced.The present invention mainly uses concentration to be greater than 25%
TMAH solution be passed through after being atomized in the environment higher than its boiling point and be vaporized into TMAH gas and chemically reacted with silicon.In general,
It is in exponential increase with temperature to chemically react reaction rate；The etching temperature that TMAH gas phase etching uses etches high about compared with conventional wet lay
30 DEG C, speed ratio is 4-8 times high with concentration wet etching.Experimental study proves that the system realizes silicon high speed etching and (is greater than 1.5 μ
M/min), while etching surface is relatively smooth (roughness Ra < 10nm).At the same time, which can pass through increasing
The air pressure of big etching cavity is to further increase etch rate.The etching system has realized silicon chip back side by back-protective chamber
The separation for completing structure and etched surface, to ensure that the step silicon etching process and to complete the compatibility between technique.
Detailed description of the invention
Fig. 1 shows TMAH to be atomized gas phase etching system block diagram.
Fig. 2 indicates the etching device schematic diagram based on TMAH atomization gas phase etching system.
Fig. 3 indicates working-flow figure.
Fig. 4 indicates that etching system send piece work flow diagram.
What Fig. 5 indicated the etching system takes piece flow chart.
Fig. 6 indicates etching process work flow diagram.
Fig. 7 indicates etch chamber temperature and air pressure control schematic diagram.
In figure: 1- control panel, 2- transmission cavity, 3- wafer fixture, 4- hydraulic gear, 5- back-protective chamber, 6- are protected
Warm layer, 7- heater strip, 8- back-protective chamber temperature sensor, 9- hydraulic pump, 10- seal washer, 11- etch chamber temperature sensing
Device, 12- etch chamber, 13- gas backstreaming pipe, 14- return valve, 15- condensation chamber, 16a- cooling water inlet pipe, 16b- cooling water return
Water pipe, 17- water cooling unit, 18- vent gas treatment interface, 19- atomization chamber pressure sensor, 20- liquid return tube, 21- aerophor,
22- ultrasonic transducer, 23-TMAH solution, 24- atomization chamber, 25- atomization chamber drop delivery pipe, 26- are atomized flow valve, 27- nitrogen
Pipeline I, 28- nitrogen flow valve I, 29- nitrogen flow valve II, 30- nitrogen pipeline II, 31- etch chamber pressure sensor, 32- spray
Shower device, 33- mechanical arm, 34- stepper motor.
Specific embodiment
Specific embodiments of the present invention are described in detail with reference to the accompanying drawing.
A kind of TMAH silicon is atomized gas phase etching system, as shown in Figure 1, comprising: control system, atomization system, conveyer system,
Etching system and water-cooling system；Wherein, water-cooling system is for condensing TMAH gas；Etching system is for etching monocrystalline silicon and reaching
To related etching condition, it is to make TMAH in gaseous state higher than TMAH boiling point that when etching silicon wafer, which etches the intracavitary temperature used,
Under silicon is performed etching；Conveyer system is used for transmission and etching silicon wafer；Atomization system is for generating and conveying TMAH liquid
Etch chamber is dropped to, by way of being atomized TMAH solution, can provide concentration more stable TMAH gas, be further ensured that
The stability of etching；Control system is used to control the coordination work of water-cooling system, etching system, atomization system and conveyer system
Make, i.e., respectively control control transport motor, in hydraulic pump and atomization chamber ultrasonator and aerophor work, simultaneously also
By adjusting the heating power of heater strip and the aperture of each valve to control the temperature and pressure of etching system.
Specific connection relationship is as shown in Fig. 2, a kind of etching device based on above-mentioned atomization gas phase etching system.
Atomization system mainly includes atomization chamber, ultrasonic transducer, aerophor, TMAH solution, pressure sensor composition.Mist
Change splendid attire TMAH solution 23 in chamber 24 and its bottom surface installation ultrasonic transducer 22 and aerophor 21, TMAH solution did not had ultrasound
Energy converter；Nebulizer pressure sensor 19 is installed in atomization chamber 24.It is defeated by atomized drop between atomization chamber 24 and etch chamber 12
Pipe 25 is sent to be connected to, installation atomization flow valve 26 in atomized drop delivery pipe 25.By the high frequency oscillation of ultrasonic transducer, make TMAH
Liquid surface swells, and cavitation occurs in the liquid surface of protuberance, so that TMAH liquid be made to be atomized into droplet；Lead to again
Crossing aerophor makes the TMAH drop of atomization uniformly be distributed to atomization chamber.Atomization chamber 24 connects nitrogen pipeline I 27, the nitrogen
Nitrogen flow valve I 28 is installed on pipeline I 27；The etch chamber 12 connects nitrogen pipeline II 30, pacifies in the nitrogen pipeline II 30
Fill nitrogen flow valve II 29；The nitrogen pipeline I 27 and nitrogen pipeline II 30 simultaneously connect source nitrogen after connecing.It is logical by nitrogen pipeline
Enter nitrogen, atomization chamber is made to keep positive pressure, the TMAH drop of atomization is made to enter etch chamber.According to atomization chamber pressure sensor and etching
The observed pressure of cavity pressure sensor adjusts nitrogen flow, so that the pressure difference that atomization chamber and etch chamber keep relative stability.
Atomization chamber is made of quartz or the resistant materials such as polytetrafluoroethylene (PTFE), pressure sensor, ultrasonic transducer in atomization chamber and
Aerophor has resistant material to be made or add corrosion-resistant finishes.
Etching system mainly includes etch chamber, heater strip, insulating layer, temperature sensor, pressure sensor composition.Etch chamber
12 top surfaces place wafer fixture 3 and simultaneously close sealing by the lid of back-protective chamber 5, and etch chamber, fixture are arranged between back-protective chamber
There is seal washer 10；Etch chamber 12 and 5 outer surface of back-protective chamber are provided with insulating layer 6.Etch chamber 12 and back-protective chamber 5
Inner wall is provided with heater strip 7, installs back-protective chamber temperature sensor 8 in back-protective chamber 5；Installation etching in etch chamber 12
Chamber temperature sensor 11 and etch chamber pressure sensor 31.Etch chamber 12 is connect by return pipe 13 with 15 import of condensation chamber, is returned
Return valve 14, the outlet of condensation chamber 15 connection liquid return tube 20 are installed, liquid return tube 20 protrudes into atomization chamber 24 simultaneously in flow tube 13
It submerges in TMAH solution 23, vent gas treatment interface 18 is connected on liquid return tube 20.Etch chamber passes through atomized drop delivery pipe (stone
English pipeline) it is connect with atomization chamber, while quartz ampoule road is additionally provided with atomization flow valve, enters etch chamber by valve controlling flow
Gas flow.Etching temperature is (higher than TMAH boiling point) in etch chamber 12
110 DEG C -125 DEG C, the TMAH drop after atomization enter temperature higher than TMAH boiling point etch chamber after be vaporized quickly,
It realizes and the gas phase of monocrystalline silicon is etched.Etch chamber is provided with temperature sensor and pressure sensor, for monitoring the temperature of etch chamber
Degree and air pressure, back-protective chamber are provided with temperature sensor to detect the temperature of silicon chip back side；Control system is in conjunction with atomization chamber
The return data of pressure sensor adjusts the heating power of etch chamber and back-protective chamber heater strip, while it is defeated to adjust atomization chamber
The valve on pipeline is sent, provides metastable etching temperature and air pressure to be reached for etching process.
Water-cooling system mainly includes water cooling unit, cooling chamber, cooling water water inlet and water return pipeline.Condensation chamber 15 passes through cooling water
Inlet pipeline 16a connects water cooling unit 17 with cooling water return pipe road 16b.It is about 20 DEG C that water cooling unit, which controls cooling water temperature, and
There is provided power makes cooling water flow through cooling cavity outer wall by cooling water circulation pipe, to achieve the purpose that condense TMAH gas.It is cold
TMAH liquid after solidifying is back to atomization chamber by liquid return tube, and remaining tail gas (mainly includes N2H is generated with reaction2) logical
Vent gas treatment Pipeline transport is crossed to exhaust gas processing device.
Conveyer system mainly includes motor, mechanical arm, spray equipment, hydraulic pump, hydraulic gear.Hydraulic pump 9 passes through
Hydraulic gear 4 controls the opening of back-protective chamber 5 and sealing cover closes；Stepper motor 34 controls mechanical arm 33 and realizes wafer folder
The placement and taking-up of tool 3；The mechanical arm 33 is located in transmission cavity 2, and spray equipment 32 is arranged in transmission cavity 2.When needing to take out
Or when being put into silicon wafer to be etched, hydraulic pump works are made by control system first, so that etch chamber is driven to open, following motor
It drives mechanical arm that silicon wafer to be etched is passed to etch chamber together with wafer fixture, finally withdraws mechanical arm, close etch chamber.Spray dress
Set the device of residue after being mainly used for etching.Particularly, fixture is made of corrosion resistant polytetrafluoroethylene (PTFE) material, is used
In clamping silicon wafer to be etched, surface to be etched is placed downwards when clamping silicon wafer；Gear-tooth machine can be used in the movement of mechanical arm
Structure realizes transmission；Motor can be used stepper motor and realize accurate steady transmission, to guarantee the reliability service of transmission system.
Control system mainly includes control panel and data line, and the main institute's etching silicon wafer that controls transmits and stablize etching
Process.When transmitting silicon wafer, control system need to complete control hydraulic pump works, transmission cavity is opened and transport motor work.It is etching
In the process, control system needs real-time monitoring back-protective chamber temperature sensor, etch chamber temperature sensor, heating chamber temperature sensing
Device, etch chamber pressure sensor and heating chamber pressure sensor；According to Real-time Monitoring Data, etch chamber, back-protective chamber are adjusted
Heater strip heating power and return valve and mist pipe road valve, to achieve the purpose that stable etching condition.
When it is implemented, each valve (including the nitrogen flow valve I 28, nitrogen flow of connection etch chamber 12 and atomization chamber 24
Valve II 29, return valve 14, vent gas treatment interface 18 and connect atomization chamber and etch chamber atomization flow valve 26) be all made of it is corrosion-resistant
Solenoid valve；Gas backstreaming pipe 13, liquid return tube 20, nitrogen pipeline I 27, nitrogen pipeline II 30 and atomized drop delivery pipe 25
The materials such as polytetrafluoroethylene (PTFE) (long-term operating temperature is by -180 DEG C to 250 DEG C) or the quartz of fire resistant anticorrosive are all made of to be made；
Etch chamber 12, atomization chamber 24 and back-protective chamber 5 are made of high purity quartz；Each temperature and pressure sensor used is intended to
Pass through anti-corrosion treatment；Wafer fixture 3 is made of corrosion resistant polytetrafluoroethylene material, while being directed to 3-8 inches of silicon respectively
Piece separately designs the fixture of different size, to meet the etching of different size silicon wafer；The softwares such as LabVIEW can be used in control system
Visual control system is write, control system is installed on PC.
Fig. 3 is working-flow figure, and system work mainly includes being switched on, initializing, send piece, etch, taking piece 5 steps
Suddenly.It wherein initializes main completion and detects the whether normal switch with each valve, heater strip of the equipment；It is provided for next step etching
Condition.
Be illustrated in figure 4 the etching system send piece flow chart, send piece can be divided mainly into and etching silicon wafer is put into transmission cavity
Fixture 3 opens transmission cavity 2, opens etch chamber 12, the transmission silicon wafer of mechanical arm 33 to etch chamber 12, withdraws mechanical arm 33, closing and carve
Lose chamber 12 and transmission cavity 2 this 6 steps.Specifically, suitable fixture 3 is selected according to etched wafer specification；Control system is driven
Dynamic stepper motor 34 works, and silicon wafer to be etched and fixture 3 are sent into etch chamber with gear and rack teeth mechanism；Then mechanical arm is withdrawn
33, close etch chamber 12 and transmission cavity 2.
Fig. 5 takes piece flow chart for the etching system, takes piece process that can be divided into and opens etch chamber 12, opens transmission cavity 2, machine
Tool arm 33 takes piece, withdraws mechanical arm 33, closes etch chamber 12 and transmission cavity 2, deionized water cleaning silicon chip.Specifically, etch chamber
12 control its switch using hydraulicdriven mode, primarily to guaranteeing stable either on or off etch chamber 12.
Fig. 6 show etching process work flow diagram, and etching process can be divided into etching initialization, send piece, building etching item
Part, etching, etching terminate and several processes such as take piece.Etching initialization is main to be completed to open water cooling unit 17, opens atomization system
With close each chamber valve, wherein opening atomization system mainly includes opening ultrasonic transducer 22, opening aerophor 21.Building
Etching condition mainly includes heating etch chamber 12 and back-protective chamber 5, stablizes its temperature at 110 DEG C or so.Master when etching
It needs to adjust 7 heating power of nitrogen flow valve I 28, gas backstreaming valve 14 and heater strip for connecting atomization chamber 24, to reach stable
The purpose and building 24 pressure of atomization chamber of 12 pressure and temperature of etch chamber are greater than the condition of 12 pressure of etch chamber.Work as etching duration
The atomization flow valve 26 being first shut off on atomized drop transfer pipeline 25 when reaching default etch period and stopping heating, connect
Get off to open the flow valve II 29 above the nitrogen pipeline II 30 of connection etch chamber 12, nitrogen purging etch chamber 12 is passed through, wait blow
It is executed after sweeping and takes piece program.
Fig. 7 show 12 temperature and air pressure control schematic diagram of etch chamber, and 12 temperature of etch chamber, which mainly passes through, adjusts etch chamber 12
Guarantee to etch required temperature (110 DEG C -125 DEG C) with the heating power of 5 surrounding heater strip 7 of back-protective chamber；12 gas of etch chamber
Pressure is mainly by adjusting the aperture of return valve 14 and the atomization flow valve 26 on atomized drop transfer pipeline 25 to stablize etch chamber
Air pressure.Etch chamber 12 vaporizes quickly in this temperature condition, the TMAH drop of atomization, to realize the purpose of gas phase etching.
Finally, it is noted that above description is not limitation of the present invention, the present invention is also not limited to the example above,
Although being described in detail referring to the embodiment of the present invention, those skilled in the art are it will also be understood that at this
The variation done in the essential scope of invention, modified, addition or replacement also should belong to protection scope of the present invention.
Claims (7)
1. a kind of TMAH silicon is atomized gas phase etching system, it is characterised in that: including atomization chamber (24) and etch chamber (12), the quarter
Chamber (12) top surface is lost to place wafer fixture (3) and close sealing by back-protective chamber (5) lid；The atomization chamber (24) and etching
It is connected between chamber (12) by atomized drop delivery pipe (25), installation atomization flow valve on the atomized drop delivery pipe (25)
(26)；TMAH solution (23) are contained in the atomization chamber (24) and ultrasonic transducer (22) and aerophor are installed in its bottom surface
(21)；The etch chamber (12) is connect by return pipe (13) with condensation chamber (15) import, is installed back on the return pipe (13)
It flows valve (14), condensation chamber (15) outlet connection liquid return tube (20), the liquid return tube (20) protrudes into atomization chamber
(24) it and submerges in TMAH solution (23), connects vent gas treatment interface (18) on the liquid return tube (20)；The condensation chamber
(15) pass through cooling water inlet pipe road (16a) and cooling water return pipe road (16b) connection water cooling unit (17)；
The etch chamber (12) and back-protective chamber (5) inner wall are provided with heater strip (7), peace in the back-protective chamber (5)
It fills back-protective chamber temperature sensor (8)；Installation etch chamber temperature sensor (11) and etch chamber pressure in the etch chamber (12)
Force snesor (31)；Nebulizer pressure sensor (19) are installed in the atomization chamber (24)；
The atomization chamber (24) connects nitrogen pipeline I (27), installs nitrogen flow valve I (28) on the nitrogen pipeline I (27)；Institute
Etch chamber (12) connection nitrogen pipeline II (30) is stated, nitrogen flow valve II (29) are installed on the nitrogen pipeline II (30)；It is described
Nitrogen pipeline I (27) and nitrogen pipeline II (30) simultaneously connect source nitrogen after connecing.
2. TMAH silicon according to claim 1 is atomized gas phase etching system, it is characterised in that: the etch chamber (12) and back
Face protection chamber (5) outer surface is provided with insulating layer (6).
3. TMAH silicon according to claim 1 or 2 is atomized gas phase etching system, it is characterised in that: it further include conveyer system,
The conveyer system includes hydraulic pump (9), and the hydraulic pump (9) passes through hydraulic gear (4) control back-protective chamber (5)
It opens and sealing cover closes；The conveyer system includes stepper motor (34), and stepper motor (34) control mechanical arm (33) is real
The placement and taking-up of existing wafer fixture (3)；The mechanical arm (33) is located in transmission cavity (2), setting spray in the transmission cavity (2)
Shower device (32).
4. TMAH silicon according to claim 1 is atomized gas phase etching system, it is characterised in that: the atomization chamber (24) is carved
Erosion chamber (12), back-protective chamber (5) are all made of quartz or polytetrafluoroethylene material is made；The wafer fixture (3) uses poly- four
Fluoride material is made.
5. TMAH silicon according to claim 1 is atomized gas phase etching system, it is characterised in that: the nitrogen flow valve I
(28), nitrogen flow valve II (29), return valve (14), atomization flow valve (26) and vent gas treatment interface (18) are all made of corrosion-resistant
Solenoid valve.
6. TMAH silicon according to claim 1 is atomized gas phase etching system, it is characterised in that: in the atomization chamber (24)
The concentration of TMAH solution (23) is higher than 25%.
7. TMAH silicon according to claim 1 is atomized gas phase etching system, it is characterised in that: etch chamber (12) etching
Temperature is 110 DEG C -125 DEG C.
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| US20060177987A1 (en) * | 1997-05-09 | 2006-08-10 | Bergman Eric J | Methods for forming thin oxide layers on semiconductor wafers |
| CN101051604A (en) * | 2006-04-07 | 2007-10-10 | 悦城科技股份有限公司 | Method and device of panel etching process |
| CN101392374B (en) * | 2008-11-07 | 2010-09-22 | 清华大学 | Double temperature control hydrofluoric acid vapor etching device |
| JP2012169552A (en) * | 2011-02-16 | 2012-09-06 | Tokyo Electron Ltd | Cooling mechanism, processing chamber, component in processing chamber, and cooling method |
| US8873020B2 (en) * | 2011-08-24 | 2014-10-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning nozzle for advanced lithography process |
| CN104867845B (en) * | 2014-02-26 | 2019-05-17 | 盛美半导体设备（上海）有限公司 | Vapor etching device |
| CN104217916B (en) * | 2014-08-20 | 2017-07-28 | 上海天马有机发光显示技术有限公司 | A kind of etching device, etching system and etching terminal detection method |
| CN106409672A (en) * | 2015-07-28 | 2017-02-15 | 中国科学院微电子研究所 | Method and apparatus for etching semiconductor substrate |
| CN105551925A (en) * | 2015-12-08 | 2016-05-04 | 武汉华星光电技术有限公司 | Dry etching device |
| JP6466315B2 (en) * | 2015-12-25 | 2019-02-06 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing system |
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