CN102212824A - Single-side silicon wafer wet etching equipment - Google Patents
Single-side silicon wafer wet etching equipment Download PDFInfo
- Publication number
- CN102212824A CN102212824A CN2010101452277A CN201010145227A CN102212824A CN 102212824 A CN102212824 A CN 102212824A CN 2010101452277 A CN2010101452277 A CN 2010101452277A CN 201010145227 A CN201010145227 A CN 201010145227A CN 102212824 A CN102212824 A CN 102212824A
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- silicon chip
- wet etching
- corrosive fluid
- vacuum pad
- silicon wafer
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 86
- 239000010703 silicon Substances 0.000 title claims abstract description 86
- 238000001039 wet etching Methods 0.000 title claims abstract description 33
- 239000007788 liquid Substances 0.000 claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 10
- 230000004224 protection Effects 0.000 claims abstract description 10
- 239000007921 spray Substances 0.000 claims abstract description 8
- 239000012530 fluid Substances 0.000 claims description 42
- 230000007797 corrosion Effects 0.000 claims description 20
- 238000005260 corrosion Methods 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 244000309464 bull Species 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 9
- 238000000347 anisotropic wet etching Methods 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention discloses a single-side silicon wafer wet etching device which comprises a liquid supply device (1), an etching chamber (2) and a residual liquid treatment device (3), wherein the liquid supply device (1) sprays high-temperature alkaline etching liquid onto a silicon wafer rotating on a vacuum chuck in the etching chamber (2) to carry out anisotropic wet etching on the silicon wafer with controllable reaction rate and surface finish, and meanwhile, the silicon wafer is tightly attached to the vacuum chuck in the etching chamber (2) to isolate an attachment surface from an etching environment, so that the single-side silicon wafer is protected. According to the single-side silicon wafer wet etching equipment provided by the invention, the single-side wet etching is carried out by spraying high-temperature alkaline etching liquid on the silicon wafer rotating on the vacuum chuck, the side to be protected is effectively isolated from the etching environment by using vacuum, and the problem that the long-time single-side protection of the silicon wafer is difficult to implement in the traditional wet etching process is solved.
Description
Technical field
The present invention relates to the body silicon processing technique field in the MEMS (micro electro mechanical system) processing technology, relate in particular to a kind of one-sided silicon chip wet etching equipment, when carrying out one-sided body silicon removal, effectively protect the silicon chip back side not to be corroded.
Background technology
In many fields of science and engineering, the microstructure of making miniaturization with etching and other micro-processing technologies has become more and more general.Silicon and other semiconductor materials can not only be used for making discrete and integrated electronic circuit, and can be used for making other device that transmitter, performer and some microminiaturizations owing to employed material and yardstick have had new features.In the silicon-based devices course of processing, usually need to utilize a large amount of silicon of anisotropic wet erosion removal with microstructures such as the cavity that forms different-shape, groove, bridge architectures.If desired corrosion is limited to that silicon chip is one-sided to carry out, then needs long-time effectively protection is carried out in the another side of silicon chip, avoid corrosive fluid to pierce, cause the opposite side structural damage.Usually with the material of high temperature resistant alkaline environment with silicon chip regional involution to be protected or with modes such as anchor clamps seal protections, but the aforesaid method effect is limited.On the one hand, there is contradiction between the removeability of the alkaline-resisting protecting materials of available and the protective capability; On the other hand, the handiness of sealing clamp is relatively poor relatively.Seek the one-sided guard method of better wet etching, can utilize wet etching advantage fast and accurately better, produce gratifying microstructure.
Summary of the invention
(1) technical problem that will solve
Can't carry out the problem that the silicon chip of long-time one-sided wet etching is effectively protected to needs in order to solve traditional means; the invention provides a kind of one-sided silicon chip wet etching equipment, to satisfy long-time needs under the high-temperature alkaline environment to the one-sided effective protection of silicon chip.
(2) technical scheme
For achieving the above object; the invention provides a kind of one-sided silicon chip wet etching equipment; this equipment comprises liquid feed device 1, oorroding house 2 and surplus liquid processing device 3; wherein; liquid feed device 1 is sprayed onto the high-temperature alkaline corrosive fluid on the silicon chip that rotates on the vacuum pad in the oorroding house 2, and silicon chip is carried out speed of reaction and the controlled anisotropic wet corrosion of surface smoothness, and the vacuum pad in silicon chip and the oorroding house 2 fits tightly simultaneously; binding face and corrosive environment are isolated, realize protection one-sided silicon chip.
In the such scheme, described liquid feed device comprises KOH solution temporary storage cavity 101, deionized water feedway 102, temperature control preheating cavity 103, heating coil 104, anticorrosive connecting tube and corresponding valve, wherein, KOH solution temporary storage cavity 101 and deionized water feedway 102 all are connected in temperature control preheating cavity 103 by valve, heating coil 104 is coiled in temperature control preheating cavity 103 outsides, keep default high temperature with the corrosive fluid that guarantees temperature control preheating cavity 103 inside, constant current constant speed pump 105 is gone into corrosive fluid feed liquid pipeline in the oorroding house 2 with the high temperature corrosion liquid pump of temperature control preheating cavity 103 inside.
In the such scheme, described oorroding house 2 comprises nozzle 201, vacuum pad 202, bull stick 203, rotating machine 204, vacuum pump 205, corrosive fluid receiving tank 206 and corrosive fluid liquid discharge pipe 207, wherein, described nozzle 201 is T-shaped, spout is the seam shape, corrosive fluid in the feed liquid pipeline sprays on the silicon chip that is positioned on the vacuum pad 202 with curtain jet through the nozzle throttling expansion; Described bull stick 203 drives the silicon chip rotation of vacuum pad 202 and the back side and vacuum pad 202 tight adhesives under the effect of rotating machine 204, guarantee the corrosion homogeneity; The vacuum tightness of vacuum pad 202 pipelines is kept by vacuum pump 205, guarantees the isolation of silicon chip back and corrosive environment; Leave the corrosive fluid of silicon chip surface, the corrosive fluid receiving tank 206 places enrichment in oorroding house 2 bottoms, and can leave oorroding house 2 through corrosive fluid liquid discharge pipe 207.
In the such scheme, described silicon chip 208 and vacuum pad 202 tight adhesives guarantee the isolation of the silicon chip back side and corrosive environment.
In the such scheme, described surplus liquid processing device 3 comprises a corrosive fluid accumulator tank, is used to collect the corrosive fluid of discharging from oorroding house 2, and corrosive fluid is carried out removal of impurities and purifying treatment.
In the such scheme, after etching, deionized water is introduced oorroding house 2 by pipeline, silicon chip is carried out spray Cleaning for High Capacity, after cleaning is finished, improve rotating speed, the rotation of the silicon chip on the vacuum pad 202 is dried.
(3) beneficial effect
As can be seen from the above technical solutions, the present invention has following beneficial effect
(1) one-sided silicon chip wet etching equipment provided by the invention; employing is carried out one-sided wet etching to the mode that the silicon chip that rotates on the vacuum pad sprays the high-temperature alkaline corrosive fluid; utilize vacuum to protect side and corrosive environment effectively to isolate desire, solved the problem that is difficult to silicon chip is implemented long-time one-sided protection in the conventional wet etching process.
(2) one-sided silicon chip wet etching equipment provided by the invention, by temperature control system and constant current constant speed pump, the control spray is kept constant high temperature and constant density at the corrosive fluid of silicon chip surface, makes erosion rate and homogeneity keep stable.
(3) one-sided silicon chip wet etching equipment provided by the invention is by regulating the temperature and the flow velocity of corrosive fluid, the homogeneity that can regulate corrosion speed and corrosion surface.
(4) one-sided silicon chip wet etching equipment provided by the invention, after corrosion finished, to silicon chip deionized water rinsing and drying, silicon chip is dried to be advanced to do.
Description of drawings
Fig. 1 is the one-piece construction synoptic diagram of one-sided silicon chip wet etching equipment provided by the invention;
Fig. 2 is the oorroding house structural representation of one-sided silicon chip wet etching equipment provided by the invention;
Fig. 3 is the nozzle arrangements synoptic diagram of one-sided silicon chip wet etching equipment provided by the invention;
Fig. 4 is the vacuum pad structural representation of one-sided silicon chip wet etching equipment provided by the invention;
Among the figure, liquid feed device 1, oorroding house 2, surplus liquid processing device 3, KOH solution temporary storage cavity 101, deionized water feedway 102, temperature control preheating cavity 103, heating coil 104, constant current constant speed pump 105, nozzle 201, vacuum pad 202, bull stick 203, rotating machine 204, vacuum pump 205, corrosive fluid condensation receiving tank 206, corrosive fluid liquid discharge pipe 207, silicon chip 208, curtain jet 209.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
For making the purpose, technical solutions and advantages of the present invention clearer, be specific examples below in conjunction with one-sided dark silicon wet etching, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1; Fig. 1 is the one-piece construction synoptic diagram of one-sided silicon chip wet etching equipment provided by the invention; this equipment comprises liquid feed device 1, oorroding house 2 and surplus liquid processing device 3; wherein; liquid feed device 1 is sprayed onto the high-temperature alkaline corrosive fluid on the silicon chip that rotates on the vacuum pad in the oorroding house 2; silicon chip is carried out speed of reaction and the controlled anisotropic wet corrosion of surface smoothness; vacuum pad in silicon chip and the oorroding house 2 fits tightly simultaneously; binding face and corrosive environment are isolated, realize protection one-sided silicon chip.
Liquid feed device comprises KOH solution temporary storage cavity 101, deionized water feedway 102, temperature control preheating cavity 103, heating coil 104, anticorrosive connecting tube and corresponding valve, wherein, KOH solution temporary storage cavity 101 and deionized water feedway 102 all are connected in temperature control preheating cavity 103 by valve, heating coil 104 is coiled in temperature control preheating cavity 103 outsides, keeps default high temperature with the corrosive fluid that guarantees temperature control preheating cavity 103 inside; The KOH corrosive fluid enters temperature control preheating cavity 103 from temporary storage cavity 101, reach preset temp after, constant current constant speed pump 105 is gone into corrosive fluid feed liquid pipeline in the oorroding house 2 with the high temperature corrosion liquid pump of temperature control preheating cavity 103 inside.
Fig. 2 is an one-sided silicon chip wet etching equipment corrosion cell structure synoptic diagram provided by the invention, oorroding house 2 comprises nozzle 201, vacuum pad 202, bull stick 203, rotating machine 204, vacuum pump 205, corrosive fluid receiving tank 206 and corrosive fluid liquid discharge pipe 207, wherein, described nozzle 201 is T-shaped, spout is the seam shape, corrosive fluid in the feed liquid pipeline sprays on the silicon chip that is positioned on the vacuum pad 202 with curtain jet through the nozzle throttling expansion; Described bull stick 203 drives the silicon chip rotation of vacuum pad 202 and the back side and vacuum pad 202 tight adhesives under the effect of rotating machine 204, guarantee the corrosion homogeneity; The vacuum tightness of vacuum pad 202 pipelines is kept by vacuum pump 205, guarantees the isolation of silicon chip back and corrosive environment; Leave the corrosive fluid of silicon chip surface, the corrosive fluid receiving tank 206 places enrichment in oorroding house 2 bottoms, and can leave oorroding house 2 through corrosive fluid liquid discharge pipe 207.
Fig. 3 is the nozzle arrangements synoptic diagram of one-sided silicon chip wet etching equipment provided by the invention, and the spout of nozzle 201 is a slit, and high temperature high pressure liquid is treated corrosion of silicon 208 surfaces by behind this nozzle with the form arrival of high temperature curtain jet 209.And the temperature of described curtain jet and flow in whole corrosion process, are kept constant.By regulating the planeness that effusive temperature and flow can be regulated erosion rate and corrosion surface.
Fig. 4 is an one-sided silicon chip wet etching equipment vacuum pad structural representation provided by the invention, vacuum pad 202 is under the transmission of bull stick 203, by rotating machine 204 driven rotary, and its rotating speed is adjustable: in corrosion process, with low speed rotation, and after cleaning end, then dry silicon chip with high speed rotating.
The vacuum pipe of sucker 202 links to each other with vacuum pump 205, and the tight adhesive in the back side of chuck surface and silicon chip 208, so just avoided silicon chip back with the contacting of corrosive environment, reach the purpose of one-sided protection.
After corrosion finished, the liquid that enters oorroding house 2 switched to deionized water.After silicon chip dashed and drenches totally, high speed rotating dried, and whole corrosion process finishes.
In the said process, the liquid of continuous enrichment accumulates in the corrosive fluid condensation receiving tank 206 in the oorroding house 2, and leaves oorroding house by Drainage pipe 207.Surplus liquid processing device 3 is used for the corrosive fluid that reclaims is filtered and the removal of impurities processing.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. one-sided silicon chip wet etching equipment; it is characterized in that; this equipment comprises liquid feed device (1), oorroding house (2) and surplus liquid processing device (3); wherein; liquid feed device (1) is sprayed onto the high-temperature alkaline corrosive fluid on the silicon chip that rotates on the vacuum pad in the oorroding house (2); silicon chip is carried out speed of reaction and the controlled anisotropic wet corrosion of surface smoothness; vacuum pad in silicon chip and the oorroding house (2) fits tightly simultaneously; binding face and corrosive environment are isolated, realize protection one-sided silicon chip.
2. one-sided silicon chip wet etching equipment according to claim 1, it is characterized in that, described liquid feed device comprises KOH solution temporary storage cavity (101), deionized water feedway (102), temperature control preheating cavity (103), heating coil (104), anticorrosive connecting tube and corresponding valve, wherein, KOH solution temporary storage cavity (101) and deionized water feedway (102) all are connected in temperature control preheating cavity (103) by valve, heating coil (104) is coiled in temperature control preheating cavity (103) outside, keep default high temperature with the corrosive fluid that guarantees temperature control preheating cavity (103) inside, constant current constant speed pump (105) the high temperature corrosion liquid pump that temperature control preheating cavity (103) is inner is gone into the corrosive fluid feed liquid pipeline in the oorroding house (2).
3. one-sided silicon chip wet etching equipment according to claim 1, it is characterized in that, described oorroding house (2) comprises nozzle (201), vacuum pad (202), bull stick (203), rotating machine (204), vacuum pump (205), corrosive fluid receiving tank (206) and corrosive fluid liquid discharge pipe (207), wherein, described nozzle (201) is T-shaped, spout sprays on the silicon chip that is positioned on the vacuum pad (202) with curtain jet through the nozzle throttling expansion for seam shape, the corrosive fluid in the feed liquid pipeline; Described bull stick (203) drives the closely silicon chip rotation of adhesive of the vacuum pad (202) and the back side and vacuum pad (202) under the effect of rotating machine (204), guarantee the corrosion homogeneity; The vacuum tightness of vacuum pad (202) pipeline is kept by vacuum pump (205), guarantees the isolation of silicon chip back and corrosive environment; Leave the corrosive fluid of silicon chip surface, locate enrichment at the corrosive fluid receiving tank (206) of oorroding house (2) bottom, and can leave oorroding house (2) through corrosive fluid liquid discharge pipe (207).
4. one-sided silicon chip wet etching equipment according to claim 3 is characterized in that, described silicon chip (208) and closely adhesive of vacuum pad (202) guarantee the isolation of the silicon chip back side and corrosive environment.
5. one-sided silicon chip wet etching equipment according to claim 1 is characterized in that described surplus liquid processing device (3) comprises a corrosive fluid accumulator tank, is used for collecting the corrosive fluid of discharging from oorroding house (2), and corrosive fluid is carried out removal of impurities and purifying treatment.
6. one-sided silicon chip wet etching equipment according to claim 1 is characterized in that, after etching, deionized water is introduced oorroding house (2) by pipeline, silicon chip is carried out spray Cleaning for High Capacity, after cleaning is finished, improve rotating speed, the rotation of the silicon chip on the vacuum pad (202) is dried.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101452277A CN102212824A (en) | 2010-04-09 | 2010-04-09 | Single-side silicon wafer wet etching equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101452277A CN102212824A (en) | 2010-04-09 | 2010-04-09 | Single-side silicon wafer wet etching equipment |
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| CN102212824A true CN102212824A (en) | 2011-10-12 |
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| CN2010101452277A Pending CN102212824A (en) | 2010-04-09 | 2010-04-09 | Single-side silicon wafer wet etching equipment |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102886745A (en) * | 2012-08-16 | 2013-01-23 | 中国科学院西安光学精密机械研究所 | Jet flow grinding and polishing mechanism based on thermal accelerated corrosion |
| CN106992135A (en) * | 2017-03-30 | 2017-07-28 | 深圳市芯思杰联邦国际科技发展有限公司 | Wet etch processor, wet etching method and chip wafer |
| CN107452658A (en) * | 2017-09-11 | 2017-12-08 | 浙江爱旭太阳能科技有限公司 | A kind of silicon chip one side etching device |
| CN107644923A (en) * | 2017-09-11 | 2018-01-30 | 浙江爱旭太阳能科技有限公司 | A kind of preparation method of two-sided PERC crystal silicon solar batteries |
| CN108198757A (en) * | 2017-12-28 | 2018-06-22 | 苏州阿特斯阳光电力科技有限公司 | The method that single side removes silicon chip doped layer |
| CN108330489A (en) * | 2018-04-20 | 2018-07-27 | 云南惠铜新材料科技有限公司 | A kind of smoothed profile copper foil surface coarsing processing method |
| CN110592680A (en) * | 2019-09-10 | 2019-12-20 | 成都青洋电子材料有限公司 | Monocrystalline silicon corrosion cleaning device and corrosion cleaning method |
| CN111381052A (en) * | 2018-12-28 | 2020-07-07 | 海太半导体（无锡）有限公司 | Automatic chemical analysis system |
| CN113496891A (en) * | 2020-04-03 | 2021-10-12 | 重庆超硅半导体有限公司 | Self-adaptive uniform corrosion method for oxide film on surface of integrated circuit silicon wafer |
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| CN1601708A (en) * | 2003-09-28 | 2005-03-30 | 沈阳仪表科学研究院 | Etching device for high precision silicon senser chip |
| CN1624198A (en) * | 2003-12-05 | 2005-06-08 | 上海阿康工贸发展有限公司 | Acidless metal etching method and its etching machine |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102886745A (en) * | 2012-08-16 | 2013-01-23 | 中国科学院西安光学精密机械研究所 | Jet flow grinding and polishing mechanism based on thermal accelerated corrosion |
| CN102886745B (en) * | 2012-08-16 | 2016-08-17 | 中国科学院西安光学精密机械研究所 | Jet flow grinding and polishing mechanism based on thermal accelerated corrosion |
| CN106992135A (en) * | 2017-03-30 | 2017-07-28 | 深圳市芯思杰联邦国际科技发展有限公司 | Wet etch processor, wet etching method and chip wafer |
| CN107452658A (en) * | 2017-09-11 | 2017-12-08 | 浙江爱旭太阳能科技有限公司 | A kind of silicon chip one side etching device |
| CN107644923A (en) * | 2017-09-11 | 2018-01-30 | 浙江爱旭太阳能科技有限公司 | A kind of preparation method of two-sided PERC crystal silicon solar batteries |
| CN108198757A (en) * | 2017-12-28 | 2018-06-22 | 苏州阿特斯阳光电力科技有限公司 | The method that single side removes silicon chip doped layer |
| CN108330489A (en) * | 2018-04-20 | 2018-07-27 | 云南惠铜新材料科技有限公司 | A kind of smoothed profile copper foil surface coarsing processing method |
| CN111381052A (en) * | 2018-12-28 | 2020-07-07 | 海太半导体（无锡）有限公司 | Automatic chemical analysis system |
| CN110592680A (en) * | 2019-09-10 | 2019-12-20 | 成都青洋电子材料有限公司 | Monocrystalline silicon corrosion cleaning device and corrosion cleaning method |
| CN113496891A (en) * | 2020-04-03 | 2021-10-12 | 重庆超硅半导体有限公司 | Self-adaptive uniform corrosion method for oxide film on surface of integrated circuit silicon wafer |
| CN113496891B (en) * | 2020-04-03 | 2023-03-14 | 重庆超硅半导体有限公司 | Self-adaptive uniform corrosion method for oxide film on surface of integrated circuit silicon wafer |
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Application publication date: 20111012 |