TW201921098A - Producing method of mask integrated frame - Google Patents

Abstract

The present invention relates to a method for manufacturing a frame integrated mask. According to the present invention, the method for manufacturing a frame integrated mask in which a mask and a frame supporting the mask are integrally formed comprises the steps of: (a) forming plated films through electroplating on a conductive substrate on which a patterned insulating portion is formed on one surface thereof; (b) forming an adhesive portion including a metal on at least a part of an upper portion of the frame and making at least a part of the edge of the plated film correspond to the adhesive portion; (c) applying at least one of a predetermined temperature and a predetermined pressure to the adhesive portion; and (d) releasing the application of at least one of the predetermined temperature and the predetermined pressure to adhere the plated film to the frame.

Description

Manufacturing method of frame-integrated mask

FIELD OF THE INVENTION The present invention relates to a method for manufacturing a frame-integrated mask. More specifically, the present invention relates to a frame and a mask that are integrated to prevent deformation of the mask and accurately align it, and prevent organic matter. A method for manufacturing a frame-integrated mask such as deformation and contamination of a mask caused by an adhesive.

2. Description of the Related Art Recently, research on an electroforming plating method has been performed in sheet manufacturing. The electroforming plating method is a method in which a positive electrode body and a negative electrode body are immersed in an electrolytic solution and a metal sheet is electrically adhered to the surface of the negative electrode body by applying a power source. Therefore, it is possible to produce an extremely thin plate and expect mass production.

On the other hand, as a technology for forming pixels in the OLED manufacturing process, the FMM (Fine Metal Mask) method is mainly used, which is to make the metal mask (Shadow Mask) of the film tightly contact the substrate And vapor deposition of organic matter at a desired position.

In the existing OLED manufacturing steps, after the mask is manufactured in a rod shape, a plate shape, or the like, the mask is welded and fixed to the OLED pixel evaporation frame for use. For the manufacture of large-area OLEDs, a plurality of masks can be fixed to the OLED pixel vapor deposition frame. However, there is a problem that the masks cannot be properly aligned with each other. In addition, during the process of welding and fixing the frame, the thickness of the mask film is too thin and belongs to a large area, so there is a problem that the mask sags or twists due to the load.

In the ultra-high-quality OLED manufacturing steps, the error of the minute arrangement of several μm also involves the failure of pixel evaporation. Therefore, the actual situation is to develop a technology that can prevent deformation such as sagging or distortion of the mask and accurately arrange it. , Techniques for fixing masks to frames, etc.

SUMMARY OF THE INVENTION Problems to be Solved by the Invention The present invention has been made in order to solve various problems of the aforementioned conventional technologies, and an object thereof is to provide a method for manufacturing a frame-integrated mask having a structure in which a mask and a frame form an integrated structure.

Another object of the present invention is to provide a method of manufacturing a frame-integrated mask that accurately arranges the masks by integrally forming the mask and the frame and improves the stability of pixel evaporation.

Another object of the present invention is to provide a method for manufacturing a frame-integrated mask capable of manufacturing a mask having a pattern by a plating step.

Means for Solving the Problems The foregoing object of the present invention can be achieved by a method for manufacturing a frame-integrated mask, which integrally forms a mask and a frame supporting the mask, and includes the following steps: (a) A step of forming a plating film on a conductive substrate having patterned insulating portions formed on one side by electroforming plating; and (b) a step of forming a metal-containing bonding portion on at least a portion of an upper portion of the frame And at least a part of the frame of the plating film corresponds to the bonding portion; (c) step, which applies at least any one of a predetermined temperature and a predetermined pressure to the bonding portion; and (d) step, which releases the predetermined temperature and the predetermined pressure At least any one of the pressure is applied, and the plating film is attached to the frame.

The bonding portion may contain an alloy of at least two metals.

In step (c), at least a portion of the bonding portion may be changed from a solid phase to a liquid phase, and in step (d), the liquid phase of the bonding portion is changed to a solid phase again, and then plating is performed. Membrane and frame.

The bonding part may contain: a first metal selected from any of In, Bi, Sn, and Au; and a second metal selected from In, Bi, Sn, Ag, Cu, Zn, Bi, Sb, Any of Ge is different from the first metal.

The bonding portion may further include a third metal selected from any one of Bi, Sn, Ag, Cu, and Cd, and different from the first metal and the second metal.

The bonding portion may further include a fourth metal selected from any one of Cu and Sb, and different from the first metal, the second metal, and the third metal.

Step (c) can be performed under an inert gas environment.

The conductive substrate may be a doped single crystal silicon material.

The insulating portion may be any one of a photoresist material, silicon oxide, and silicon nitride.

The frame may have a shape surrounding the plating film.

In step (d), the plated film can be adhered to the upper part of the frame while being subjected to a tensile force on the outside.

In step (a), the formation of a plating film on the insulating portion can be prevented, and the plating film has a pattern.

After the step (a), a step of heat-treating the plating film may be performed.

The heat treatment can be performed at 300 ° C to 800 ° C.

ADVANTAGE OF THE INVENTION According to this invention comprised as mentioned above, a mask and a frame can be set as an integrated structure.

In addition, according to the present invention, it is possible to accurately arrange the masks and improve the stability of pixel evaporation.

In addition, according to the present invention, a mask having a pattern can be produced only by a plating step.

Moreover, according to the present invention, the adhesion between the mask and the frame can be improved.

Forms for Carrying Out the Invention The detailed description of the present invention described later is made with reference to the drawings which illustrate specific embodiments in which the present invention can be implemented. In order that those skilled in the art to which this invention pertains can fully implement this invention, these embodiments will be described in detail. It should be understood that although the various embodiments of the present invention are different from each other, they need not be mutually exclusive. For example, the specific shape, structure, and characteristics described herein are related to one embodiment, and other embodiments can be specifically implemented without departing from the spirit and scope of the present invention. In addition, it should be understood that the position or arrangement of individual constituent elements in the respective disclosed embodiments can be changed without departing from the spirit and scope of the present invention. Therefore, the detailed description described below is not intended to be limiting. As long as it can be properly explained, the scope of the present invention is limited to the appended claims together with all the scopes equal to the claimants of the claims. Similar reference symbols in the drawings have the same or similar functions in various aspects, and the length, area, and thickness may sometimes be exaggerated in terms of their convenience.

In the following, in order that a person having ordinary knowledge in the technical field to which the present invention belongs can easily implement the present invention, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic diagram showing an OLED pixel evaporation apparatus 200 using FMM100. FIG. 2 is a schematic diagram showing a mask.

Referring to FIG. 1, in general, the OLED pixel evaporation device 200 includes: a magnetic plate 300 that houses a magnet 310 and is provided with a cooling water line 350; and a evaporation source supply unit 500 that is located below the magnetic plate 300 Supply organic matter source 600.

Between the magnetic plate 300 and the vapor deposition source supply unit 500, an object substrate 900 such as glass of the vapor deposition organic substance source 600 may be interposed. The FMM 100 in which the organic material source 600 is vapor-deposited for each pixel is in close contact with the target substrate 900 or is disposed in close proximity. The magnet 310 generates a magnetic field, and the FMM 100 can be in close contact with the target substrate 900 due to the gravity caused by the magnetic field.

Stick-Type masks (see Fig. 2 (a)) and plate-type masks (see Fig. 2 (b)) must be aligned with the target substrate 900 before they are in close contact with each other. One mask or a plurality of masks may be combined with the frame 800. The frame 800 is fixed in the OLED pixel evaporation device 200, and the mask can be combined with the frame 800 through another attaching and welding steps.

The evaporation source supply unit 500 reciprocates to the left and right paths and supplies the organic matter source 600. The organic matter source 600 supplied from the evaporation source supply unit 500 can be deposited on the target substrate 900 by a pattern (PP) that has been formed on the FMM mask 100. One side. The organic material source 600 vapor-deposited through the pattern of the FMM mask 100 has a function as a pixel 700 of the OLED.

In order to prevent uneven evaporation of the pixels 700 caused by the Shadow Effect, the pattern (PP) of the FMM mask 100 may be formed obliquely (S) (or formed into a cone shape (S)). The organic material source 600 passing the pattern (PP) along the inclined surface in a diagonal direction can also contribute to the formation of the pixels 700. Therefore, the pixels 700 can be vapor-deposited as a whole.

The mask 100a shown in FIG. 2 (a) is a stick-type mask, and both sides of the stick can be welded and fixed to the OLED pixel evaporation frame 800 for use. The mask 100b shown in FIG. 2 (b) is a plate type mask, which can be used in a large area pixel formation step, and the frame of the plate is welded and fixed to the OLED pixel evaporation frame 800 for use. Fig. 2 (c) is an enlarged A-A 'side sectional view of Figs. 2 (a) and 2 (b).

A plurality of display patterns (DP) can be formed on the bodies of the masks 100: 100a and 100: 100b. The display pattern (DP) is a pattern corresponding to a display of a smartphone or the like. When the display pattern (DP) is enlarged, a plurality of pixel patterns (PP) corresponding to R, G, and B can be confirmed. The pixel pattern (PP) may have a shape in which the side portion is inclined and a tapered shape (see FIG. 2 (c)). Various pixel patterns (PP) are grouped to form a display pattern (DP), and a plurality of display patterns (DP) may be formed on the mask 100: 100a, 100: 100b.

That is, in this specification, the display pattern (DP) does not represent a concept of one pattern, and it should be understood as a concept of a plurality of pixel patterns (PP) corresponding to one display. Hereinafter, a pixel pattern (PP) and a mask pattern (PP) are mixed.

When the mask 100 shown in FIG. 1 and FIG. 2 is welded and fixed to the frame 800 respectively, if an alignment error between the masks occurs, and a specific mask sags or distorts, it will cause the whole Mask alignment error.

Therefore, the present invention is characterized in that the mask is attached to the frame in a state where the mask has been formed, and the mask and the frame are integrated, thereby preventing deformation of the mask and accurately arranging the mask.

FIG. 3 is a schematic diagram showing a frame-integrated mask 10 according to an embodiment of the present invention. Fig. 3 (a) is a perspective view of the frame-integrated mask 10, and Fig. 3 (b) is an enlarged side sectional view taken along the line B-B 'of Fig. 3 (a).

Referring to FIG. 3, the frame-integrated mask 10 includes a mask 20 and a frame 30. The mask 20 may include: a plating film 20a including a portion of a plurality of display patterns (DP) and a pixel pattern (PP); and a plating film 20b of a frame portion.

The plating films 20a and 20b and the frame 30 may be made of the same material, and the bonding portions (EM) may be integrally connected to each other as an intermediary. In FIG. 3, for the convenience of explanation, it should be understood that the thickness and width of the bonding portion (EM) are slightly exaggerated for display. In fact, the portion mixed with the bonding portion (EM) may be hardly protruded to connect the mask 20 and the frame 30. part. Although the plating film 20 is described as 20a and 20b with different symbols according to the formed position, it is actually a plating film 20 (20a, 20b) that is electroplated in the electroforming plating step (see FIG. 4). Each part is a structure formed simultaneously in the electroforming plating step.

A mask pattern (PP) may be formed on the mask 20. The mask pattern (PP) should have a generally tapered shape: a shape that gradually widens or narrows from the upper part to the lower part. The upper surface of the mask 20 is in close contact with the target substrate 900 (see FIG. 6). The pattern (PP) is more preferably a shape whose width gradually increases from the upper part to the lower part.

The pattern width can be formed to a size of several to several tens of μm, and a size smaller than 30 μm is more preferable. The mask pattern (PP) can be formed by preventing the generation of the plating film 20 with the insulating portion 45. The specific formation process will be described later with reference to FIG. 4. The mask pattern (PP) has the same structure as the aforementioned pixel pattern (PP) / display pattern (DP) in FIG. 2.

In order to support the mask 20 tightly without sagging or twisting, the frame 30 preferably has a shape surrounding the frame of the mask 20. The quadrangular frame 30 shown in FIG. 3 may also be in the form of a circle, a polygon, or the like that belongs to a closed form. The material of the frame 30 is preferably the same invariant steel, ultra-constant Fan steel, etc. as the mask 20.

As described above, the frame-integrated mask 10 of the present invention is integrally connected to the frame 20 and the frame 30. Therefore, the mask can be carried out only by moving and setting the frame 30 toward the OLED pixel evaporation device 200. arrangement.

4 and 5 are schematic views showing a process of manufacturing the frame-integrated mask 100 of FIG. 3 according to an embodiment of the present invention.

4 (a), a conductive substrate 41 is prepared for electroforming plating. A mother plate 40 containing a conductive substrate 41 is used as a cathode in electroforming plating.

As a conductive material, in the case of a metal, a metal oxide may be generated on the surface, and impurities may flow during the metal manufacturing process. In the case of a polycrystalline silicon substrate, there are inclusions or grain boundaries (Grain Boundary). ), In the case of a conductive polymer substrate, the possibility of containing impurities is high, and the strength and resistance to acid are weak. Elements that prevent uniform formation of an electric field on the surface of the mother substrate 40 (or the substrate 41), such as metal oxides, impurities, inclusions, and grain boundaries, are called "defects." Due to the defect, the negative electrode body of the foregoing material cannot apply a uniform electric field, and a part of the plating film may be formed unevenly.

When specifically realizing ultra-high-quality pixels above UHD level, the unevenness of the plating film and the plating film pattern (PP) may adversely affect the formation of the pixels. The pattern width of FMM and shadow mask may be formed to a size of several to several tens of μm, and a size smaller than 30 μm is more desirable. Therefore, even the defects of several μm size occupy a large proportion of the pattern size of the mask. size.

In addition, in order to remove defects of the negative electrode body of the foregoing material, additional steps for removing metal oxides, impurities, and the like are performed, and other defects such as etching to the negative electrode body material may be caused in the process.

Therefore, the substrate 41 made of single crystal silicon can be used in the present invention. In order to have conductivity, the substrate 41 is doped at a high concentration of 10 ¹⁹ cm ^-3 or more. The doping may be performed on the entire substrate 41 or may be performed only on the surface portion of the substrate 41.

In the case of doped single crystal silicon, since there are no defects, there is an advantage that a uniform electric field can be formed on the entire surface during electroforming plating to generate a uniform plating film 20. The frame-integrated mask 10 (or FMM) manufactured through the uniform plating film 20 can further improve the picture quality level of the OLED pixels. In addition, since there is no need to perform additional steps for removing and eliminating defects, the cost of the steps can be reduced and the productivity can be improved.

In addition, the use of the substrate 41 made of silicon has the advantage that the insulating portion 45 can be formed only in the process of oxidizing and nitriding the surface of the substrate 41 as needed. The insulating portion 45 has a function of preventing electrical adhesion of the plating film 20 and can form a pattern (PP) on the plating film 20.

Next, referring to FIG. 4 (b), an insulating portion 45 may be formed on at least one surface of the substrate 41. The insulating portion 45 is formed to have a pattern, and preferably has a pattern having a tapered shape. The insulating portion 45 is made of silicon oxide, silicon nitride, or the like based on the conductive substrate 41, and a photoresist material may be used. When a cone-shaped pattern is formed using a photoresist material, a multiple exposure method, a method of making the exposure intensity different for each region, and the like can be used. Thereby, the mother board 40 can be manufactured.

Next, referring to FIG. 4 (c), a positive electrode body (not shown) facing the mother plate 40 (or the negative electrode body 40) is prepared. The positive electrode body (not shown) is immersed in a plating solution (not shown), and the mother board 40 is entirely or partially immersed in a plating solution (not shown). Due to the electric field formed between the mother substrate 40 (or the negative electrode body 40) and the opposite positive electrode body, it is possible to electrically adhere to the surface of the mother substrate 40 to generate a plating film 20 (20a, 20b). However, the plating film 20 is formed only on the exposed surface 46 of the conductive substrate 41, and the plating film 20 is not formed on the surface of the insulating portion 45. Therefore, a pattern (PP) can be formed on the plating film 20 (see FIG. 3 (b)).

The plating solution is an electrolytic solution and can be a material of the plating film 20 constituting the mask 20. As an embodiment, when manufacturing an Invar sheet of iron-nickel alloy as the plating film 20, a mixed solution containing a solution containing Ni ions and a solution containing Fe ions can be used as the plating solution. As another embodiment, when manufacturing a Super Invar sheet of iron-nickel-cobalt alloy as the plating film 20, a solution containing a Ni ion, a solution containing a Fe ion, and a solution containing a Co ion The mixed solution was used as a plating solution. Invariable steel sheet and ultra-constant steel sheet are used as FMM and Shadow Mask in the manufacture of OLED. In addition, the thermal expansion coefficient of the invariant steel sheet is about 1.0 × 10 ^-6 / ℃, and the thermal expansion coefficient of the ultra-constant steel sheet is about 1.0 × 10 ^-7 / ℃, which is very low. Therefore, the shape of the pattern of the mask is deformed by thermal energy The worry is small and it is mainly used in high-resolution OLED manufacturing. In addition, a plating solution for the desired plating film 20 can also be used without limitation. In this specification, a hypothetical production of a constant steel sheet 20 will be described as a main example.

Since the plating film 20 is thickened while being electrically adhered from the surface of the base material 41, it is preferable to form the plating film 20 beyond the upper end of the insulating portion 45. That is, the thickness of the plating film 20 is smaller than the thickness of the insulating portion 45. Since the plating film 20 is filled and electrically adhered to the pattern space of the insulating portion 45, it can be formed into a tapered shape having a phase opposite to that of the pattern of the insulating portion 45.

On the other hand, after the plating film 20 is formed, the plating film 20 may be heat-treated. The heat treatment can be performed at a temperature of 300 ° C to 800 ° C. Generally speaking, the thermal expansion coefficient of an invariant steel sheet produced by electroforming plating is higher than that of an invariant steel sheet produced by rolling. Accordingly, the thermal expansion coefficient of the invariant steel sheet can be reduced by heat treatment of the invariant steel sheet. However, the invariant steel sheet may have some deformation during the heat treatment. Therefore, if the heat treatment is performed in a state where the mother board 40 (or the substrate 41) and the mask 20 are bonded, the shape of the mask pattern (PP) formed in the space occupied by the insulating portion 45 of the mother board 40 can be maintained constant. , Has the advantage of preventing fine deformation caused by heat treatment. In addition, after the mother plate 40 (or the substrate 41) is separated from the plating film 20, even if the mask 20 having a mask pattern (PP) is heat-treated, it has the effect of reducing the thermal expansion coefficient of the constant steel sheet.

5 (a), the mother substrate 40 (or the negative electrode body 40) is lifted out of the plating solution (not shown). In addition, the structure shown in FIG. 4 (c) is inverted and arranged on the upper portion of the frame 30. Conversely, the frame 30 may be inverted and arranged on the structure of FIG. 4 (c). The frame 30 may have a shape surrounding the plating film 20.

An adhesive portion (EA) may be formed on an upper portion of the frame 30 that the plating film 20 contacts. By applying a predetermined temperature and pressure to the bonding portion (EA), the plating film 20 and the frame 30 are bonded, so that at least a part of the frame of the plating film 20 can correspond to the bonding portion (EA).

The bonding portion (EA) may contain a metal, and has various shapes such as a film, a wire, and a bundle. The bonding portion (EA) has a thin thickness of about 10 to 30 μm. Therefore, even if it is interposed between the plating film 20 and the frame 30, the difference in height is hardly affected.

More specifically, the bonding portion (EA) may contain an alloy of at least two metals. The bonding portion (EA) is made of a metal material, and no other organic adhesive is processed on the surface. Therefore, in the state shown in FIG. 5 (a), the bonding portion (EA) bonds the plating film 20 and the frame 30. How much will be insufficient. Therefore, the plating film 20 and the frame 30 may use the bonding portion (EA) as an intermediary, and a predetermined load may be applied so as not to deviate from the correspondence, and temporarily fixed to each other. In addition, a restriction mechanism (not shown) may be used to temporarily fix the positions of the plating film 20 and the frame 30.

The adhesion part (EA) may have an alloy form of at least two metals and have an eutectic point. That is, the adhering portion (EA) contains at least two solid phases, and in the eutectic point of a specific temperature / pressure, both metal solid phases can constitute a liquid phase. When the eutectic point is removed, two metal solid phases can be formed again. Thereby, the role as an adhesive can be performed by the phase change of solid phase → liquid phase → solid phase.

The adhesion part (EA) may have an alloy form of two metals. In this case, the first metal may be selected from any of In, Bi, Sn, and Au; and the second metal may be selected from In, Bi, Sn, Ag, Cu, Zn, Bi, Either Sb or Ge is different from the first metal.

The bonding portion (EA) may have an alloy form of three metals. At this time, it may include: a first metal selected from any of In, Bi, Sn, and Au; and a second metal selected from In, Bi, Sn, Ag, Cu, Zn, Bi, and Sb And Ge are different from the first metal; and the third metal is selected from any one of Bi, Sn, Ag, Cu, and Cd, and is different from the first metal and the second metal.

The bonding portion (EA) may have an alloy form of four metals. At this time, it may include: a first metal selected from any of In, Bi, Sn, and Au; and a second metal selected from In, Bi, Sn, Ag, Cu, Zn, Bi, and Sb And Ge, and different from the first metal; the third metal, which is selected from any one of Bi, Sn, Ag, Cu, and Cd, and is different from the first metal and the second metal; and the fourth metal The metal is selected from any one of Cu and Sb, and is different from the first metal, the second metal, and the third metal.

The following Table 1 exemplifies substances that can constitute the adhesion part (EA).

[Table 1]

Next, referring to FIG. 5 (b), a predetermined temperature / pressure (HP) may be applied to the bonding portion (EA). The temperature and pressure at which the metal of the bonding portion (EA) can be applied to change from the solid phase to the liquid phase can be applied. The eutectic temperature is exemplified in Table 1 above. Therefore, an appropriate temperature and pressure can be selected in accordance with the metal constituting the bonding portion (EA).

On the other hand, in order to apply a predetermined pressure in such a manner that voids are not generated, and to prevent oxidation of the eutectic melt, another device for supplying an antioxidant gas / environment (inert gas, vacuum, etc.) may be used. (Not shown). Under the application of a predetermined temperature and pressure, the metal of the adjoining portion (EA) is dissolved in a solid phase and becomes a liquid phase.

Next, referring to FIG. 5 (c), if the application of the predetermined temperature / pressure (HP) is cancelled, the bonding portion (EA) in the liquid phase can be changed to the bonding portion (EM) in the solid phase again, and then the mask 20 and the frame 30 are bonded. . That is, it may have a function as a solid eutectic bonding portion (EM) for bonding the mask 20 and the frame 30.

The metal-containing adhesive part (EM) (or eutectic adhesive part (EM)) is different from general organic adhesives and contains no volatile organic compounds at all. Therefore, when the frame-integrated mask is disposed in the OLED pixel evaporation device 200 and the pixel evaporation step is performed, it is possible to prevent the volatile organic substance of the organic adhesive from reacting with the step gas to adversely affect the pixels of the OLED. In addition, it is possible to prevent the adverse effects of contaminating the space of the OLED pixel vapor deposition device 200 with the escaped gas such as organic substances contained in the organic adhesive itself, or vapor deposition on the OLED pixel as an impurity.

In addition, since the bonding portion (EM) remains as a solid metal phase in a state where the mask 20 and the frame 30 are bonded, it cannot be washed with the OLED organic cleaning solution and can have corrosion resistance. Thereby, even if the frame-integrated mask 10 is repeatedly used in the OLED pixel step, the bonding function (EM) can be maintained.

In addition, since the bonding portion (EM) contains two or more metals, the bonding portion (EM) can be connected to the mask 20 and the frame 30 which are made of the same metal material as compared with the organic bonding agent, and have high bonding properties. That is, between the mask 20 and the frame 30, which are made of a metallic material such as invariable steel, the bonding force on the surface is high. Moreover, since it is a metallic material, it has the advantage of being damaged by heat or having a low thermal deformation rate (coefficient of thermal expansion).

If all the foregoing matters are taken into consideration, the bonding portion (EM) of the present invention has superior step stability compared to the organic bonding agent, and exhibits the effect of firmly bonding the two structures between the mask 20 and the frame 30. Thereby, the arrangement reliability of the frame-integrated mask 10 can be greatly improved.

On the other hand, in the step (c) of FIG. 5, when the bonding part (EM) is changed from the liquid phase to the solid phase and then the plating film 20 and the frame 30 are adhered, the plating film 20 can be stretched in the direction of the frame 30 or outside. The state of force continues. Compared with the liquid phase, the small volume of the solid phase can also contribute to the effect of tensile force. The plating film 20 can apply a tensile force in the outer direction and keep it stretched and stretched toward the frame 30 side. Therefore, the arrangement of the mask pattern (PP) is not disturbed even if the temperature changes, etc. .

5 (d), the insulating portion 45 can be removed. A known technique that removes only the insulating portion 45 such as a photoresist material, silicon oxide, and silicon nitride without affecting the remaining structure can be used without limitation. On the other hand, when the insulating portion 45 is formed integrally with the conductive substrate 41 by silicon oxide, silicon nitride, and the like, the steps of removing these steps can be omitted, and the conductive substrate 41 can be separated from the plating film 20 at the same time. The insulation portion 45 is removed.

The conductive substrate 41 can be separated toward the upper portion of the cover 20 and the frame 30. When the conductive substrate 41 is separated, a form of the mask 20 that is passed through the bonding portion (EM) to the frame 30 appears.

FIG. 6 is a schematic diagram showing an OLED pixel evaporation device 200 to which the frame-integrated mask 10 of FIG. 3 is applied.

Referring to FIG. 6, the frame-integrated mask 10 is in close contact with the target substrate 900, and the arrangement of the masks 10 is completed by merely fixing the frame 30 part inside the OLED pixel evaporation device 200. The plating film 20 (20a, 20b) of the mask 20 is integrally connected to the frame 30 through the bonding portion (EM), and the frame is tightly supported, so that the mask 20 can be prevented from sagging or twisting due to load. . Thereby, the arrangement of the frame-integrated masks 10 necessary for the pixel evaporation can be accurately performed.

As described above, the present invention is illustrated and illustrated by the preferred embodiments, but it is not limited to the foregoing embodiments, and various modifications and changes can be made by those with ordinary knowledge in the technical field to which the invention belongs without departing from the spirit of the invention. It should be understood that such modifications and alterations fall within the scope of the present invention and the appended patent applications.

INDUSTRIAL APPLICABILITY The present invention is applicable to a field related to a method for manufacturing a frame-integrated mask.

10‧‧‧Frame Integrated Mask

20‧‧‧Mask, plating film

20a, 20b‧‧‧plating film

30‧‧‧Frame

40‧‧‧Motherboard

41‧‧‧ conductive substrate

45‧‧‧Insulation Department

46‧‧‧ surface

100‧‧‧Mask, Shadow Mask, FMM

100a‧‧‧ stick mask

100b‧‧‧plate mask

200‧‧‧OLED pixel evaporation device

300‧‧‧ Magnetic plate

310‧‧‧Magnet

350‧‧‧ cooling water pipeline

500‧‧‧Evaporation source supply department

600‧‧‧ Organic Source

700‧‧‧ pixels

800‧‧‧OLED pixel evaporation frame

900‧‧‧Target substrate

DP‧‧‧Display Pattern

EA, EM‧‧‧ follow-up

HP‧‧‧Applied temperature / pressure

PP‧‧‧Pixel pattern, mask pattern, plating film pattern

S‧‧‧ cone shape

FIG. 1 is a schematic diagram showing an OLED pixel evaporation device using FMM.

FIG. 2 is a schematic diagram showing a mask.

FIG. 3 is a schematic view showing a frame-integrated mask according to an embodiment of the present invention.

4 and 5 are schematic views showing a process of manufacturing the frame-integrated mask of FIG. 3 according to an embodiment of the present invention.

FIG. 6 is a schematic diagram showing an OLED pixel vapor deposition device using the frame-integrated mask of FIG. 3.

Claims (14)

A method for manufacturing a frame-integrated mask, which integrally forms a mask and a frame supporting the mask, and includes the following steps: (a) a step of forming a plating film on a conductive substrate having patterned insulating portions formed on one side by electroforming plating; (b) a step of forming a metal-containing bonding portion on at least a portion of the upper portion of the frame, and corresponding at least a portion of the frame of the plating film to the bonding portion; (c) a step of applying at least any one of a predetermined temperature and a predetermined pressure to the bonding portion; and (d) A step of releasing application of at least one of a predetermined temperature and a predetermined pressure, and adhering the plating film to the frame. The method for manufacturing a frame-integrated mask according to claim 1, wherein the bonding portion contains an alloy of at least two metals. For example, in the manufacturing method of the frame-integrated mask of claim 2, in step (c), at least a part of the bonding part changes from a solid phase to a liquid phase, and in step (d), the liquid phase of the bonding part becomes a solid again Phase, and attach the plating film to the frame. The manufacturing method of the frame-integrated mask according to claim 1, wherein the adhering part contains: A first metal selected from any one of In, Bi, Sn, and Au; and The second metal is different from the first metal and is selected from any one of In, Bi, Sn, Ag, Cu, Zn, Bi, Sb, and Ge. For example, the method for manufacturing a frame-integrated mask according to claim 4, wherein the bonding portion further contains a third metal selected from any one of Bi, Sn, Ag, Cu, and Cd, and the first metal and The second metal is different. For example, the method for manufacturing a frame-integrated mask according to claim 5, wherein the bonding portion further includes a fourth metal selected from any one of Cu and Sb, and the first metal, the second metal, and the third metal. Different metals. The method for manufacturing a frame-integrated mask according to claim 1, wherein step (c) is performed in an inert gas environment. The method for manufacturing a frame-integrated mask according to claim 1, wherein the conductive substrate is a doped single crystal silicon material. The manufacturing method of the frame-integrated mask according to claim 1, wherein the insulating portion is any one of a photoresist material, silicon oxide, and silicon nitride. The method for manufacturing a frame-integrated mask according to claim 1, wherein the frame has a shape surrounding the plating film. The method for manufacturing a frame-integrated mask according to claim 1, wherein, in step (d), the plating film is attached to the upper portion of the frame while being subjected to a tensile force on the outside. The method for manufacturing a frame-integrated mask according to claim 1, wherein in the step (a), the formation of a plating film is prevented on the insulating portion, and the plating film has a pattern. The method for manufacturing a frame-integrated mask according to claim 1, wherein a step of heat-treating the plating film is further performed after the step (a). The method for manufacturing a frame-integrated mask according to claim 13, wherein the heat treatment is performed at 300 ° C to 800 ° C.