JP2010222687A - Mask for film formation - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem that a TFT provided on a film-formed substrate and a light-emitting part of an organic electroluminescence apparatus are damaged and the properties of the film-formed substrate are deteriorated by an electric discharge generated between an individual mask and the film-formed substrate, which occurs because when the mask for film formation is separated from the film-formed substrate after a vapor-deposition process, peeling electrification occurs between the individual mask and the film-formed substrate, though the area of the mask for film formation can be increased by arranging a plurality of the individual masks while using a glass sheet as a supporting substrate. <P>SOLUTION: The mask for film formation 100 includes the individual mask 101, the supporting substrate 102, a frame 103, an electroconductive region 104 and an electroconductive adhesive part 105. The electric charge stored in the individual mask 101 by static electricity due to the peeling electrification is grounded through the electroconductive adhesive part 105, the electroconductive region 104 and the frame 103, which prevents the film-formed substrate from being damaged. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a film formation mask.

  A technique of selectively forming a film using a film formation mask is used in, for example, a manufacturing process related to an organic electroluminescence (hereinafter abbreviated as EL) apparatus. The organic functional layer used in the organic EL device is extremely reluctant to moisture, solvent, and oxygen. Therefore, during the manufacturing process of the organic EL device, there is a process in which it is difficult to apply a photolithographic etching method that is preferably used in a silicon device. Therefore, a technique of selectively forming a film using a film formation mask is used as a suitable technique.

  As described in Japanese Patent Application Laid-Open No. 2004-228620, the film formation mask is configured such that an individual mask using single crystal silicon (referred to as a chip) is formed of Pyrex (registered trademark) glass or the like. A configuration in which a plurality of components are arranged on top is known. Glass can form a plate having a large dimension of about 2 m × 2 m while maintaining high planar accuracy and flatness. Therefore, there is an advantage that a film forming process can be performed on a large deposition target substrate. Further, a metal substrate may be used instead of glass.

JP 2005-276480 A

  By arranging a plurality of individual masks using glass or metal as a supporting substrate, it becomes possible to increase the area of the film-forming mask. However, when separating the film-forming mask and the film-forming substrate after the film-forming process, In some cases, peeling electrification occurs between the individual mask and the deposition target substrate. When peeling electrification occurs, a discharge occurs between the individual mask and the deposition substrate, and the TFT (thin film transistor) provided in the deposition substrate and the light emitting part of the organic EL device are destroyed. There is a problem that the characteristics of the deposition target substrate deteriorate.

  In addition, when using a film-forming method such as an ion plating vapor deposition method that is used as a typical method for manufacturing an ITO (indium / tin / oxide) film, the film-forming particles may have a charge. In the process of performing the steps, discharge is generated due to accumulation of electric charges on the support substrate and the film formation substrate, and the light emitting portion of the TFT and the organic EL device is also destroyed, which deteriorates the characteristics of the film formation substrate. is there.

  Here, even when a conductor such as a metal is used for the support substrate, if there is poor conduction between the individual mask and the support substrate, the individual mask and the deposition target substrate are electrically separated. Therefore, a rapid discharge accompanying dielectric breakdown occurs, and it is difficult to solve the problem of damaging the deposition target substrate due to this discharge.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples. Note that “film formation” refers to PVD (physical vapor deposition) in a broad sense and includes resistance heating vapor deposition, electron beam vapor deposition, ion plating, sputtering, and ion beam vapor deposition. It is also defined to include CVD (Chemical Vapor Deposition). In addition, “conductivity” means that a potential due to an electric charge due to electrostatic charging or a potential generated by an electric charge applied in a film formation process can suppress a spark-like discharge between the film formation substrate and the film formation mask. It is defined as a state having a function capable of transporting electric charge. Further, “upper” is defined as a direction from the support substrate toward the individual mask.

  Application Example 1 A film formation mask according to this application example is a film formation mask that is disposed so as to overlap with a film formation substrate and selectively forms a film on the film formation substrate, and is at least partially Is electrically conductive and electrically connected to the deposition substrate, a support substrate having an opening fixed to the frame, and the opening of the support substrate. An individual mask fixed so as to cover the substrate in a plan view, and the support substrate has at least a part of a region overlapping the individual mask and the support substrate in a plan view. And the conductive region extends to a region of the frame, and the conductive region is at least partially between the individual masks, Be connected using conductive adhesive And butterflies.

  According to this, when separating the film formation substrate and the film formation mask after the film formation step, the electric charge between the film formation substrate and the individual mask caused by peeling charging is transferred from the individual mask to the conductive adhesive, It is possible to guide to the film formation substrate through the conductive region, the support substrate, and the frame, and the TFT provided on the film formation substrate generated by the discharge between the film formation substrate and the individual mask It becomes possible to prevent electrostatic breakdown of the organic EL element. Further, not only the peeling charging but also the charge applied during the film forming process can be similarly led to prevent discharge.

  Application Example 2 A film formation mask according to this application example is a film formation mask that is disposed so as to overlap with a film formation substrate and selectively forms a film on the film formation substrate, and is at least partly formed. Is electrically conductive and electrically connected to the deposition substrate, a support substrate having an opening fixed to the frame, and the opening of the support substrate. An individual mask fixed so as to cover the substrate in a plan view, and the support substrate has at least a part of a region overlapping the individual mask and the support substrate in a plan view. And a part of the region extending to the region of the frame and overlapping the individual mask and the support substrate in plan view. Fixed by an insulating adhesive, and said individual Some between the mask and the conductive region, characterized in that it is fixed using a conductive adhesive.

  According to this, when separating the film formation substrate and the film formation mask after the film formation step, the electric charge between the film formation substrate and the individual mask caused by peeling charging is transferred from the individual mask to the conductive adhesive, It is possible to guide to the film formation substrate through the conductive region, the support substrate, and the frame, and the TFT provided on the film formation substrate generated by the discharge between the film formation substrate and the individual mask It becomes possible to prevent electrostatic breakdown of the organic EL element. Further, not only the peeling charging but also the charge applied during the film forming process can be similarly led to prevent discharge. Further, by using an insulating adhesive that is advantageous in terms of cost as compared with the conductive adhesive, it is possible to fix the individual mask while suppressing the increase in cost while maintaining electrical continuity.

  Application Example 3 A film formation mask according to the above application example, wherein an electrical resistance is provided in the middle of an electrical path between the individual mask and the deposition target substrate, and the resistance value of the electrical resistance is 10 kΩ. It is characterized by being 10 MΩ or less.

  According to the application example described above, it is possible to prevent damage to the deposition target substrate due to rapid discharge. Here, by releasing the charge through an electric resistor having a resistance value of 10 kΩ or more, the movement speed of the charge passing between the deposition mask and the deposition substrate is suppressed, and the deposition substrate is provided. It is possible to prevent electrostatic breakdown of the TFT and the organic EL element. In addition, by releasing the charge through a resistance value of 10 MΩ or less, it is possible to prevent the charge from being accumulated and to quickly release the charge.

  Application Example 4 The film formation mask according to the application example described above, wherein silicon is used for the individual mask.

  According to the application example described above, since silicon has high hardness and is not easily deformed, it is possible to form a film on the deposition target substrate with high pattern accuracy. In addition, anisotropic etching can be easily performed using KOH (potassium hydroxide) or the like. Therefore, it is possible to easily provide an individual mask having high processing accuracy. By using this individual mask, it is possible to provide a film forming mask having high processing accuracy.

  Application Example 5 In the film forming mask according to the application example, the support substrate is made of glass.

  According to the application example described above, the glass can form a plate having a large dimension of about 2 m × 2 m while maintaining high planar accuracy and flatness. Therefore, film formation processing can be performed on a large deposition target substrate, and throughput can be improved.

  Application Example 6 In the film formation mask according to the application example described above, the conductive region is present in a part in a plan view in the support substrate.

  According to the application example described above, peeling of the conductive region from the support substrate can be suppressed. In the deposition mask, heat is applied during the manufacturing process of the deposition target substrate, and the temperature rises. Due to this temperature rise, thermal stress is generated between the support substrate and the conductive region. Here, since the conductive region exists in a part, a region for relaxing the thermal stress is secured, and peeling of the conductive region is suppressed. Therefore, generation of particles due to peeling of the conductive region can be suppressed and generation of defects in the deposition target substrate can be suppressed. In addition, since the warpage of the supporting substrate due to stress can be suppressed, it is easy to ensure the adhesion between the deposition target substrate and the deposition mask.

  Application Example 7 In the film formation mask according to the application example, the conductive region has a linear shape, and the line width of the conductive region has a value of 50 μm or more and 500 μm or less. To do.

  According to the application example described above, peeling of the conductive region and warpage of the support substrate due to stress can be suppressed. Here, by securing a line width of 50 μm or more, disconnection due to damage caused by contact between the conductive region and another object or cleaning of the deposition mask can be suppressed. Further, by suppressing the line width to 500 μm or less, peeling of the conductive region from the support substrate due to stress can be suppressed. In addition, it is possible to suppress deformation of the support substrate due to stress.

  Application Example 8 In the film forming mask according to the application example described above, the conductive region is made of chromium, a Kovar alloy, or silicon.

According to the application example described above, chromium (7 × 10 ^--6 / K) or Kovar alloy ^{(5 × 10 -6 / K)} , silicon (3 × 10 ^-6 / K), the glass (3 × 10 ^{- 6} / K) and the thermal expansion coefficient are close to each other, it is possible to prevent bending of the support substrate due to thermal stress and disconnection of the conductive region.

  Application Example 9 In the film forming mask according to the application example, the support substrate is a metal.

  According to the application example described above, metal has higher toughness than glass, and it is possible to prevent damage such as chipping and cracking due to a slight collision that occurs when a support substrate is attached when forming a film. . Moreover, since it has electroconductivity, the whole surface becomes an electroconductive area | region. Therefore, it is possible to guide charges from the individual mask to the deposition target substrate through the conductive adhesive, the support substrate, and the frame without separately forming a conductive region, and a process for manufacturing a deposition mask. Can be shortened.

(A) is a top view of the film-forming mask, (b) is a sectional view taken along line A-A ′ of the film-forming mask (a). The schematic diagram of the vapor deposition apparatus which vapor-deposits on a film-forming substrate using the film-forming mask. The schematic cross section of an ion plating apparatus. (A) is a top view of the film-formation mask, (b) is the sectional view on the B-B 'line of (a). (A) is a top view at the time of forming an electroconductive area | region in the whole solid form, (b) is the C-C 'sectional view taken on the line of (a). (A) is a top view at the time of isolate | separating an individual mask into a some block, and electrically connecting with the flame | frame for every block, (b) is the sectional view on the D-D 'line of (a). (A)-(c) is a top view which shows the example of arrangement | positioning of a conductive adhesive part and an insulating adhesive part. (A)-(c) is a top view which shows the example of arrangement | positioning of a conductive adhesive part and an insulating adhesive part. Sectional drawing which shows the example which mixed the spacer in the conductive adhesive part.

  Hereinafter, embodiments embodying the present invention will be described with reference to the drawings.

(First embodiment: Configuration of a film-forming mask provided with a conductive region)
Hereinafter, the structure of the film-forming mask provided with the electroconductive area | region is demonstrated as 1st Embodiment. FIG. 1A is a plan view of a film formation mask, and FIG. 1B is a cross-sectional view taken along line AA ′ of the film formation mask (a). FIG. 2 is a schematic diagram of a vapor deposition apparatus that performs vapor deposition on a deposition target substrate using a film formation mask. Here, a case where the vapor deposition method is used as the film forming step will be described, but a method such as CVD may be used. The film formation mask 100 includes an individual mask 101, a support substrate 102, a frame 103, a conductive region 104, and a conductive adhesive portion 105 obtained by curing a conductive adhesive.

  The vapor deposition apparatus 110 includes a vacuum container 111, an exhaust system 112, a transport system 113, a vapor deposition source 114, and a shutter 115, and performs vapor deposition (film formation) on the deposition target substrate 120 using the film formation mask 100.

  The vacuum container 111 includes a deposition mask 100, a deposition target substrate 120, a transport system 113, a vapor deposition source 114, and a shutter 115, and has a function of blocking the atmosphere. The vacuum vessel 111 is typically made of stainless steel (SUS) or aluminum.

  The exhaust system 112 evacuates the atmosphere in the vacuum vessel 111, ensures that an average free process of the vapor deposition material generated from the vapor deposition source 114 described later reaches the deposition target substrate 120, and reacts the vapor deposition material with the atmosphere. In order to suppress it, it has the function to decompress the inside of the vacuum vessel 111. As the exhaust system, a pump such as a dry pump, a turbo molecular pump, or a cryopump can be used.

  The transport system 113 has a function of transporting the deposition mask 100 and the deposition target substrate 120 in an overlapped state.

  The evaporation source 114 has a function of supplying an evaporation substance to the deposition target substrate 120 and performing film formation using an evaporation method. The vapor deposition source 114 supplies the vapor deposition material to the deposition target substrate 120 by using, for example, resistance heating to change the vapor deposition material into a vapor phase.

  The shutter 115 controls the flow of the vapor deposition material guided from the vapor deposition source 114 to the deposition target substrate 120, and is opened when the supply of the vapor deposition material from the vapor deposition source 114 is stabilized, and a film is formed to a desired film thickness. Closed when The shutter 115 has a function of controlling the layer thickness formed on the deposition target substrate 120.

  The individual mask 101 is in contact with the deposition target substrate 120 and functions as a mask in the vapor deposition process. The individual mask 101 is typically formed by performing etching using a single crystal silicon substrate. The single crystal silicon substrate can be anisotropically etched using potassium hydroxide or the like. By using this anisotropic etching, the individual mask 101 capable of forming a fine pattern can be obtained.

In addition, the thermal expansion coefficient of the single crystal silicon substrate is about 3 × 10 ⁻⁶ / ° C., which is smaller than that of metal represented by SUS, 15 × 10 ⁻⁶ / ° C., and has a more precise pattern dimension. It can be used suitably for the film-forming mask 100 to be formed.

The support substrate 102 has a function of supporting the individual mask 101 and is typically made of hard glass (for example, borosilicate glass). Hard glass has a coefficient of thermal expansion of about 3 × 10 ⁻⁶ / ° C., and even if the temperature of the support substrate 102 rises during the vapor deposition process, variation in pattern dimensions can be kept small and precise pattern formation can be performed. Making it possible. In particular, when single crystal silicon is used for the individual mask 101, the thermal expansion coefficients of the hard glass and the single crystal silicon have almost the same value. Therefore, even if the temperature rises during the vapor deposition process, the support substrate 102 and the individual mask are used. The distortion of 101 can be reduced. In addition, the hard glass can be easily obtained even with a large substrate of about 2 m × 2 m, for example, and since high planar accuracy is realized, a large number of individual masks 101 can be supported with high accuracy. . Between the support substrate 102 and the individual mask 101, there is a conductive adhesive portion 105 arranged in a dot shape. The function of fixing the individual mask 101 and the conductivity between the support substrate 102 and the individual mask 101 are provided. It has a function to ensure.

  7A to 7C are plan views showing examples of arrangement of the conductive adhesive portion 105 and the insulating adhesive portion 105a. 7A to 7C illustrate the case where the conductive region 104 has a linear shape, the pattern of the conductive region 104 is not particularly limited. In order to improve visibility, the conductive region 104 is exposed here. Further, the pattern of the individual mask 101 is omitted.

  In this embodiment, the conductive adhesive portions 105 are arranged in a dot shape as shown in FIG. 1, but this is shown in FIG. You may arrange | position to the whole surface of the area | region where 102 and the individual mask 101 overlap. In this case, the conductive adhesive portion 105 may protrude from the individual mask 101.

  Moreover, as shown in FIG.7 (b), you may arrange | position circumferentially. Further, as shown in FIG. 7C, it is also preferable to provide an insulating adhesive portion 105a and mechanically fix the conductive adhesive portion 105 and the insulating adhesive portion 105a together. Moreover, you may use a pattern as shown to Fig.8 (a)-(c). 8A to 8C are plan views showing examples of arrangement of the conductive adhesive portion and the insulating adhesive portion. 8A to 8C illustrate the case where the conductive region 104 has a linear shape, the pattern of the conductive region 104 is not particularly limited. In order to improve visibility, the conductive region 104 is exposed here. Further, the pattern of the individual mask 101 is omitted.

  FIG. 8A shows an example in which the conductive adhesive portion 105 and the insulating adhesive portion 105a are arranged with a substantially coaxial pattern. FIG. 8B shows an example in which the conductive adhesive portion 105 is arranged in a spot shape and the other region is surrounded by the insulating adhesive portion 105a. FIG. 8C shows an example in which the conductive adhesive portion 105 is arranged in a spot shape, and another region where the support substrate 102 and the individual mask 101 overlap is surrounded by the insulating adhesive portion 105a. In addition to the patterns described here, the present invention can be applied to patterns including the conductive adhesive portion 105.

  The insulating adhesive forming the insulating adhesive portion 105a is less expensive than the conductive adhesive used to form the conductive adhesive portion 105 because it does not need to contain a noble metal such as silver. Moreover, since it does not contain conductive particles, the viscosity, curing method, and the like can be easily controlled. Therefore, by combining the insulating adhesive part 105a, it is possible to improve the degree of freedom in designing the film formation mask 100.

  The frame 103 has a function of supporting the support substrate 102 and is typically made of SUS. SUS is suitably used in a vacuum atmosphere because it has low gas adsorbability and rust prevention. Here, the frame 103 is grounded via the vacuum vessel 111 shown in FIG. The frame 103 and the support substrate 102 are combined by a mechanical holding mechanism such as screwing.

The conductive region 104 is electrically connected to the individual mask 101 and arranged to be electrically connected to the frame 103 via the support substrate 102. As a typical pattern, a matrix wiring pattern is used as shown in FIG. As the material constituting the conductive region 104, metallic chromium is typically used. Chromium has a thermal expansion coefficient of 6 × 10 ⁻⁶ / ° C., which is relatively close to that of hard glass. Therefore, when hard glass is used as a constituent material of the support substrate 102, occurrence of problems such as peeling of the conductive region 104 from the support substrate 102 can be suppressed even if the temperature rises during the vapor deposition process.

  Further, since chromium has a high hardness (Pickers hardness of about 1000 HV), it has a characteristic that it is hardly damaged by mechanical contact. In the case where chromium is used as the substance constituting the conductive region 104, it is preferable to use a pattern having a width of 50 μm or more and 500 μm or less. If there is a pattern width of 50 μm or more, it becomes possible to prevent pattern disconnection due to mechanical damage. Further, by suppressing the pattern width to 500 μm or less, distortion due to thermal stress between the support substrate 102 and the conductive region 104 can be suppressed, and deformation of the support substrate 102 can be suppressed.

  Further, as shown in FIG. 1A, it is preferable to form a conductive region 104 on a surface of the support substrate 102 on which the individual mask 101 is fixed (a surface in contact with the deposition target substrate 120). Since the vapor deposition particles fly from the opposite side through the conductive region 104 and the support substrate 102, the conductive region 104 is not deposited by vapor deposition. Therefore, the film formation mask 100 can be managed with little damage.

  The conductive region 104 and the frame 103 are electrically connected by being mechanically brought into close contact with each other. The frame 103 is mechanically coupled to the transport system 113 of the vapor deposition apparatus 110, and is electrically connected to the vacuum container 111 of the vapor deposition apparatus 110 via the transport system 113. Therefore, the electric charge accumulated in the individual mask 101 is transmitted to the conductive adhesive portion 105, the conductive region 104, the frame 103, the transport system 113, and the vacuum vessel 111 and is guided to the ground potential. In this case, the frame 103 and the transfer system 113 of the film formation mask 100 may be configured to be mechanically separated or electrically grounded by a mechanism such as a conducting wire. When the film substrate 120 and the film formation mask 100 are separated, static electricity can be surely released. In addition, the electric charge accumulated in the deposition target substrate 120 is transmitted to the transfer system 113 and the vacuum vessel 111 and led to the ground potential. Therefore, a potential difference generated between the deposition target substrate 120 and the individual mask 101 can be suppressed low, and breakdown due to static electricity can be suppressed.

  Moreover, as shown in FIG. 9, it is also preferable to mix the spacer 106 in the conductive adhesive used for forming the conductive adhesive portion 105. FIG. 9 is a cross-sectional view when a spacer is mixed in the conductive adhesive portion 105. By mixing the spacer 106, the thickness of the conductive adhesive portion 105 formed by solidifying the conductive adhesive can be controlled. In particular, when a conductive adhesive that volatilizes the solvent and solidifies is used, the volume decreases during solidification. Therefore, by mixing the spacer 106, the thickness of the conductive adhesive portion 105 can be precisely controlled.

  Here, when a configuration including the insulating adhesive portion 105a is used, it is preferable to mix the same spacer 106 in the insulating adhesive. By mixing the spacers 106, the distance between the support substrate 102 and the individual mask 101 can be kept uniform. Therefore, it is possible to narrow or eliminate a gap generated between the deposition target substrate 120 and the individual mask 101. Therefore, it is possible to suppress the occurrence of pattern shape defects due to wraparound during film formation. Here, the spacer 106 may be either a conductive material or an insulating material. Further, the particle size of the spacer 106 is not particularly limited, but a spacer of about 5 μm to 500 μm is preferable because it is easily available.

  Here, peeling charging that occurs when the deposition target substrate 120 and the deposition mask 100 are separated from each other will be briefly described. Peeling electrification means that when two objects are brought into contact with each other, movement of electric charge occurs at the interface, and when the object is released, the electric charge moved on each surface remains and is charged. In a state where static electricity generated by peeling charging is accumulated, for example, discharge (Electro Static Discharge, ESD) may lead to destruction of the deposition target substrate 120.

  Even when the discharge does not occur, in the charged state, dust generated after vapor deposition may be electrostatically attracted (Electro Static Attraction (ESA)). In this case, the individual mask 101 of the film formation mask 100 is contaminated and a pattern defect occurs. In view of this, by using the conductive region 104 to lead the charge due to peeling charging or the like accumulated in the individual mask 101 to the ground potential, it is possible to prevent the deposition target substrate 120 from being damaged and the individual mask 101 from being contaminated. .

(Second embodiment: Countermeasure against charging caused by vapor deposition process)
In the first embodiment, electric charges due to peeling charge or the like are discharged in a spark shape between the film formation mask 100 and the film formation substrate 120, and the film formation substrate 120 and the film formation substrate 120 are prevented from being destroyed by this energy. Although a configuration has been described in which both of the film masks 100 are electrically connected to each other to electrically eliminate both electrostatic charges caused by peeling charging, etc., this configuration is also effective as a countermeasure against charging caused by the vapor deposition process. is there. Hereinafter, as a second embodiment, an operation for charging generated by the vapor deposition process will be described. Examples of the vapor deposition method that accompanies charge accumulation include an electron beam vapor deposition method, an ion plating method, a sputtering method, and an ion beam vapor deposition method. Here, a description will be given of a configuration in which charges accumulated in an ion plating process used as a suitable means for vapor deposition film formation of ITO (indium / tin / oxide) are guided to the ground potential.

  Here, an outline of the ion plating apparatus will be described first. Then, the reason why charges are accumulated during the vapor deposition process will be described, and it will be described that it is effective to provide the conductive regions 104 described with reference to FIG.

  FIG. 3 is a schematic cross-sectional view of an ion plating apparatus. The ion plating apparatus 10 includes a pressure gradient plasma gun 20, a magnetic field generating coil 30, a guide electrode 40, a transfer system 50, a process gas introduction unit 60, a target 70, an exhaust system 80, and a vacuum vessel 90, and is used for film formation. A patterned thin film is formed on the deposition target substrate 120 using the mask 100.

The pressure gradient type plasma gun 20 uses a material (for example, LaB ₆ ) that emits thermoelectrons at a high density to the cathode 20a, and performs arc discharge with the target 70 to generate vapor deposition particles. The main body portion is provided on the side wall of the vacuum vessel 90. By adjusting the power supply to the cathode 20a, intermediate electrode 20b, intermediate electrode 20c, and magnetic field generating coil 30 of the pressure gradient plasma gun 20, the state of the plasma supplied into the vacuum vessel 90 is controlled.

  The vapor deposition particles generated by the arc discharge are ionized by, for example, high-density plasma caused by Ar gas. The pressure gradient type plasma gun 20 realizes a pressure gradient by disposing intermediate electrodes 20b and 20c between the cathode 20a and the vacuum vessel 90. Here, the cathode 20a is disposed upstream of the gas supply unit 20d that supplies a plasma generating gas typified by Ar.

  As a result, the material constituting the cathode 20a is not mixed into the thin film, the life of the cathode is prolonged, and stable deposition for a long time becomes possible. Furthermore, since a direct current arc discharge with a large current (for example, several 100 A) can be used, high-density plasma can be generated, and the evaporation rate of the target 70 is higher than that of the conventional sputtering method. Another feature is that evaporation, ionization, and excitation can be performed with a single gun.

  The target 70 is controlled to an appropriate potential and sucks the high-density plasma excited by the pressure gradient plasma gun 20 downward. The target 70 evaporates and wears in response to the energy from the pressure gradient plasma gun 20, and therefore has a structure (not shown) that gradually increases to correct this wear. The fluctuation of the state is corrected.

  The guide electrode 40 is configured as an annular container arranged concentrically around the target 70, and the magnetic field generating coil 30 is accommodated in the container. The state of the plasma incident on the target 70 is controlled by the cooperation of the magnetic field generating coil 30 and the guide electrode 40.

  For example, oxygen is supplied from the process gas introduction unit 60 to control the vapor deposition state of ITO or silicon nitride oxide that becomes vapor deposition particles.

  The exhaust system 80 is configured by a vacuum pump such as a turbo molecular pump, for example, and operates to keep the atmosphere in the vacuum vessel 90 in a vacuum.

  The transfer system 50 moves the deposition target substrate 120 and the deposition mask 100 in a sliding manner, and functions to replace the deposition target substrate 120 and the deposition mask 100 arranged in close contact with each other. have.

  Here, an ion plating method using the ion plating apparatus 10 having the above-described configuration will be described.

  First, the target 70 is attached to the lower part of the vacuum vessel 90. Then, the deposition target substrate 120 and the deposition mask 100 are disposed at opposing positions above the target 70. Next, a process gas corresponding to the deposition conditions is introduced into the vacuum vessel 90. Subsequently, a DC voltage is applied between the cathode 20 a of the pressure gradient plasma gun 20 and the target 70.

  Then, discharge is generated between the cathode 20a of the pressure gradient plasma gun 20 and the target 70 to generate high-density plasma. The high-density plasma reaches the target 70 by being guided by the magnetic field generating coil 30 and the guide electrode 40.

  The target 70 evaporates upon receiving energy from the pressure gradient plasma gun 20, and vapor deposition particles are ejected. The vapor deposition particles are ionized by the high density plasma. The vapor deposition particles adhere to the film formation substrate 120 using the film formation mask 100 as a mask, and vapor deposition film formation is performed. Here, since the flight direction of the vapor deposition particles can be controlled by controlling the magnetic field generated by the magnetic field generating coil 30 and the potential of the guide electrode 40, the distribution of the plasma above the target 70 can be controlled by controlling the plasma distribution. The deposition rate distribution on the film formation substrate 120 can be adjusted, and a thin film with uniform film quality can be obtained over a wide area.

  3 schematically shows the positional relationship between the film formation substrate 120 and the film formation mask 100. The deposition mask 100 is disposed between the deposition target substrate 120 and the target 70 and is disposed at a position covering the deposition target substrate 120. In a region where the film formation mask 100 is opened, vapor deposition is performed on the film formation substrate 120, and in other regions, vapor deposition particles are blocked by the film formation mask 100. The above vapor deposition film formation is not performed. In this way, a film having a pattern structure is formed on the deposition target substrate 120.

  Here, the deposition target substrate 120 may be moved by the transport system 50 after the generation of vapor deposition particles is stabilized. In this case, instability at the initial stage of plasma generation can be avoided. Further, the vapor deposition particles may be irradiated while being transported by the transport system 50. In this case, the film thickness is controlled according to the conveyance speed. Furthermore, it is possible to continuously process the deposition target substrate 120.

  Here, the vapor deposition particles are ionized by high density plasma. The vapor deposition particles adhere to the film formation substrate 120 using the film formation mask 100 as a mask, and vapor deposition film formation is performed. That is, the vapor deposition particles fly to the deposition target substrate 120 and the deposition mask 100 in a charged state (in this case, positively charged). Therefore, both the deposition target substrate 120 and the deposition mask 100 are charged during the vapor deposition process.

  Here, the deposition target substrate 120 is attached to the transport system 50. Therefore, the electric charge accumulated in the deposition target substrate 120 is guided to the ground potential via the transport system 50 and the vacuum container 90. Therefore, charge accumulation on the deposition target substrate 120 can be suppressed.

  On the other hand, the vapor deposition particles also fly to the individual mask 101 of the film formation mask 100. The electric charges derived from the vapor deposition particles are obtained from the individual mask 101 by the conductive region 104 formed on the support substrate 102, so that the conductive adhesive portion 105, the conductive region 104, the frame 103, the transport system 50, Since it is guided to the ground potential via the vacuum container 90, charging of the individual mask 101 included in the film formation mask 100 can be suppressed.

  In this configuration, when the surface of the deposition target substrate 120 is covered with an insulating film, or when an insulating film is formed on the deposition target substrate 120, the charge accumulated on the deposition target substrate 120 is From the film formation substrate 120 through the individual mask 101 (in contact with the film formation substrate 120), the conductive adhesive portion 105, the conductive region 104, the frame 103 (see FIG. 1), the transfer system 50, and the vacuum vessel 90. It is particularly suitable because it is led to the ground potential.

  In a state where charges are accumulated, for example, discharge (ESD) may lead to destruction of the deposition target substrate 120. Even when no discharge occurs, when the film formation mask 100 is charged, the individual mask 101 of the film formation mask 100 is contaminated by electrostatically adsorbing (ESA) dust or the like generated after vapor deposition. And pattern defects may occur. Therefore, the charge accumulated in the individual mask 101 via the conductive adhesive portion 105 and the charge accumulated in the film formation substrate 120 (particularly when the surface of the film formation substrate 120 is covered with an insulating film). It becomes possible to prevent the deposition target substrate 120 from being destroyed and the individual mask 101 from being contaminated.

(Modification of the first embodiment and the second embodiment)
Hereinafter, modifications of the first embodiment and the second embodiment will be described.
In the above-described embodiment, as shown in FIG. 2, the individual mask 101 is directly grounded through the conductive adhesive portion 105, the conductive region 104, the frame 103, the transport system 113, and the vacuum vessel 111. It is also preferable to carry out via electrical resistance. When the film-forming mask 100 and the film-forming substrate 120 are grounded in parallel by a conductor, a large energy charge flows into the grounded region rapidly. Then, a rapid potential change occurs in the deposition target substrate 120, and the deposition target substrate 120 may be damaged.

  Here, for example, by inserting an electrical resistance between the frame 103 of the film formation mask 100 and the transport system 113, it is possible to suppress the occurrence of such damage. The resistance value is preferably 10 kΩ or more and 10 MΩ or less. By allowing the charge to escape through an electric resistor having a resistance value of 10 kΩ or more, the movement speed of the charge passing between the deposition mask 100 and the deposition target substrate 120 is suppressed, and the deposition target substrate 120 is provided. It is possible to prevent electrostatic breakdown of the TFT and the organic EL element. In addition, by releasing charges through a resistance value of 10 MΩ or less, charge accumulation can be prevented, and charges between the deposition mask 100 and the deposition target substrate 120 can be quickly released. Note that the position where the electrical resistance is disposed is only required to be provided between the individual mask 101 of the deposition mask 100 and the deposition target substrate 120 and is limited between the frame 103 and the transport system 113. There is no.

  Further, the thickness of the conductive region 104 may be distributed in the support substrate 102. FIG. 4A is a plan view when the thickness of the conductive region 104 is changed, and FIG. 4B is a cross-sectional view taken along line B-B ′ of FIG. As shown in FIGS. 4A and 4B, by forming the conductive region 104 thick in the region fixed by the frame 103, the occurrence of poor conduction due to wear with the frame 103 is suppressed. It becomes possible to do. FIG. 4 illustrates an example in which the conductive adhesive portion 105 is provided in a dot shape with the individual mask 101 and the support substrate 102 in a plan view of the support substrate 102.

  In addition, the conductive region 104 is arranged in a linear shape, and a pattern width of 50 μm or more and 500 μm or less is used, but this may be formed in a solid shape on the entire surface. FIG. 5A is a plan view in the case of using a pattern in which a conductive region is formed in a solid shape, and FIG. 5B is a cross-sectional view taken along line C-C ′ in FIG. In this case, conduction between the individual mask 101 and the frame 103 can be reliably established. Even when there is slight peeling, the film formation mask 100 and the film formation substrate 120 are prevented from being charged, and thus can be easily removed. Here, an example in which the conductive adhesive portion 105 is provided in the entire region where the individual mask 101 and the support substrate 102 overlap in the plan view of the support substrate 102 is illustrated.

  Further, the conductive area 104 is replaced with a pattern in which the areas overlapping with all the individual masks 101 are connected in parallel, and the individual mask 101 is separated into a plurality of blocks and electrically connected to the frame 103 for each block. Also good. FIG. 6A shows a plan view in this case, and FIG. 6B shows a cross-sectional view taken along the line D-D ′ of FIG. In this case, it is possible to give a high degree of freedom to the pattern plane shape of the conductive region 104. Here, an example in which the conductive adhesive portion 105 is provided in the entire region where the individual mask 101 and the support substrate 102 overlap in the plan view of the support substrate 102 is illustrated.

  Further, instead of chromium, Kovar (typically 54% iron, 29% nickel, 17% cobalt) alloy may be used as a material constituting the conductive region 104. Since Kovar alloy has substantially the same thermal expansion coefficient as that of hard glass, when hard glass is used for the support substrate 102, the occurrence of problems such as peeling is small. Therefore, when the Kovar alloy is used as the conductive region 104 and the conductive region 104 is arranged in a linear shape, the upper limit of the pattern width disappears, and if the linear pattern has a line width of 50 μm or more, a solid pattern can be obtained. The restrictions on the pattern layout can be eliminated. Further, even when chromium is used, the same configuration can be adopted when the support substrate 102 is made of glass having a large thermal expansion coefficient instead of hard glass. Alternatively, a silicon film may be used as a material forming the conductive region 104. Since silicon has almost the same thermal expansion coefficient as hard glass, it can be handled in the same manner as described above.

Here, an example in which chromium, Kovar alloy, or silicon is used as the material constituting the conductive region 104 has been described, but another conductive material may be used. For example, aluminum has a thermal expansion coefficient of about 25 × 10 ⁻⁶ / ° C., but even when such a material is used, breakage due to stress can be prevented by using a linear pattern. Thus, the conductive region 104 can be used as a substance. In addition, since metals generally have a function of elastically deforming and absorbing stress, a line width exceeding 500 μm is given with a dimensional accuracy that allows slight deformation of the support substrate 102. Alternatively, a vapor deposition process using the film formation mask 100 can be performed.

  Further, by inserting an electrical resistance between the frame 103 of the deposition mask 100 and the transfer system 113, a sudden potential fluctuation between the deposition mask 100 and the deposition target substrate 120 is avoided. Although an example is described, this can be replaced with a resistance as an individual component by inserting an equivalent electrical resistance. Specifically, this can be dealt with by using a conductor having a high resistivity as the material constituting the conductive region 104. For example, the wiring resistance is increased by using a material having a high electrical resistance to form a heating element such as nichrome or cantal, and a sudden potential fluctuation between the deposition mask 100 and the deposition target substrate 120 is avoided. It becomes possible to make it.

  Further, although an example in which single crystal silicon is used as a material constituting the individual mask 101 has been described, a metal may be used for this. Since metal is tougher than single crystal silicon, cracking due to stress is unlikely to occur. By using a metal, it is possible to prevent a phenomenon such as a damage due to stress applied to the deposition mask 100 and the like, compared to the case of using single crystal silicon.

  In particular, when Kovar alloy is used, when hard glass is used for the support substrate 102, it has the same thermal expansion coefficient as that of the support substrate 102. Therefore, even if the temperature of the support substrate 102 rises during the vapor deposition process, Variations in dimensions are kept small, and precise pattern formation can be performed.

Moreover, although the example which used hard glass as a substance which comprises the support substrate 102 was demonstrated, you may use materials other than hard glass for this. For example, glass such as soda glass and quartz glass, ceramics such as alumina and aluminum nitride, and plastics such as epoxy resin, phenol resin, and polyimide resin may be used. Since quartz glass has a low coefficient of thermal expansion of about 0.6 × 10 ⁻⁶ / ° C., the amount of positional fluctuation of the individual mask 101 can be kept small even if the temperature of the support substrate 102 rises during the vapor deposition process. It is. In addition, when ceramic materials are used, the ceramic is a chemically stable material, so that it can be used as a mask for the vapor deposition process and damaged by chemical treatment used to remove deposited vapor. This is preferable because it can be suppressed. Also, it is possible to make a large plate easily with plastic. Therefore, it is possible to easily cope with an increase in the size of the deposition target substrate 120.

  Further, a metal plate may be used as a material used for the support substrate 102 instead of the hard glass. Metals are less susceptible to cracking due to impact than hard glass. By using a metal, it becomes possible to prevent a phenomenon such as a damage due to an impact applied to the operation of attaching the film formation mask 100 or the like as compared with the case of using hard glass. In this case, the support substrate also serves as the conductive region.

  DESCRIPTION OF SYMBOLS 10 ... Ion plating apparatus, 20 ... Pressure gradient type plasma gun, 20a ... Cathode, 20b ... Intermediate electrode, 20c ... Intermediate electrode, 20d ... Gas supply part, 30 ... Magnetic field generating coil, 40 ... Guide electrode, 50 ... Conveyance system , 60 ... Process gas introduction part, 70 ... Target, 80 ... Exhaust system, 90 ... Vacuum container, 100 ... Deposition mask, 101 ... Individual mask, 102 ... Support substrate, 103 ... Frame, 104 ... Conductive region, 105 DESCRIPTION OF SYMBOLS ... Conductive adhesive part, 105a ... Insulating adhesive part, 106 ... Spacer, 110 ... Deposition apparatus, 111 ... Vacuum container, 112 ... Exhaust system, 113 ... Conveyance system, 114 ... Deposition source, 120 ... Deposition substrate .

Claims (9)

A mask for film formation, which is disposed so as to overlap with a film formation substrate and selectively forms a film on the film formation substrate;
A frame at least partially electrically conductive and electrically connected to the deposition substrate;
A support substrate having an opening fixed to the frame;
An individual mask fixed so as to cover the opening of the support substrate in a plan view of the support substrate,
The support substrate includes a conductive region that electrically connects the support substrate and the individual mask in at least a part of a region overlapping the individual mask and the support substrate in plan view.
And the conductive region extends to the region of the frame;
In addition, the film forming mask is characterized in that at least part of the conductive region is connected to the individual mask using a conductive adhesive. A mask for film formation, which is disposed so as to overlap with a film formation substrate and selectively forms a film on the film formation substrate;
A frame at least partially electrically conductive and electrically connected to the deposition substrate;
A support substrate having an opening fixed to the frame;
An individual mask fixed so as to cover the opening of the support substrate in a plan view of the support substrate,
The support substrate includes a conductive region that electrically connects the support substrate and the individual mask in at least a part of a region overlapping the individual mask and the support substrate in plan view.
And the conductive region extends to the region of the frame;
In addition, a part of the region overlapping the individual mask and the support substrate in plan view is fixed by an insulating adhesive, and a part between the individual mask and the conductive region is a conductive adhesive. A film-forming mask characterized by being fixed using a film.   3. The film-formation mask according to claim 1, wherein an electrical resistance is provided in the middle of an electrical path between the individual mask and the deposition target substrate, and the resistance value of the electrical resistance is 10 kΩ or more and 10 MΩ. A film forming mask characterized by the following.   The film-forming mask according to claim 1, wherein silicon is used for the individual mask.   The film-forming mask according to claim 1, wherein the support substrate is glass.   6. The film formation mask according to claim 1, wherein the conductive region is present in a part in a plan view in the support substrate. mask.   The film-formation mask according to claim 1, wherein the conductive region has a linear shape, and a line width of the conductive region has a value of 50 μm or more and 500 μm or less. A film forming mask characterized by the above.   The film formation mask according to claim 1, wherein the conductive region is made of chromium, Kovar alloy, or silicon.   The film-forming mask according to claim 1, wherein the support substrate is a metal.

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