WO2019054716A1 - Method for manufacturing frame integrated mask - Google Patents

Abstract

The present invention relates to a method for manufacturing a frame integrated mask. According to the present invention, the method for manufacturing a frame integrated mask (10) in which a mask (20) and a frame (30) supporting the mask (20) are integrally formed comprises the steps of: (a) forming plated films (20: 20a, 20b) through electroplating on a conductive substrate (41) on which a patterned insulating portion (45) is formed on one surface thereof; (b) forming an adhesive portion (EA) including a metal on at least a part of an upper portion of the frame (30) and making at least a part of the edge (20b) of the plated film (20) correspond to the adhesive portion (EA); (c) applying at least one of a predetermined temperature and a predetermined pressure (HP) to the adhesive portion (EA); and (d) releasing the application of at least one of the predetermined temperature and the predetermined pressure to adhere the plated film (20) to the frame (30).

Description

Method for manufacturing a frame-integrated mask

The present invention relates to a method of manufacturing a frame-integrated mask. More particularly, the present invention relates to a method for manufacturing a frame-integrated mask, which can prevent deformation of the mask and make alignment clear, and prevent deformation, contamination, etc. of the mask by the organic adhesive .

Recently, electroforming methods have been studied in the manufacture of thin plates. In the electroplating method, an anode body and a cathode body are immersed in an electrolytic solution, and a power source is applied to electrodeposit a metal thin plate on the surface of the cathode body, so that an ultra thin plate can be manufactured and mass production can be expected.

On the other hand, FMM (Fine Metal Mask) method for depositing an organic material at a desired position by bringing a thin film metal mask (Shadow Mask) into close contact with a substrate is mainly used as a technique of forming a pixel in an OLED manufacturing process.

In a conventional OLED manufacturing process, a mask is formed in a stick shape or a plate shape, and then a mask is welded and fixed to an OLED pixel deposition frame. In order to manufacture a large area OLED, a plurality of masks can be fixed to the OLED pixel deposition frame. Further, in the process of welding and fixing to the frame, there is a problem that the thickness of the mask film is too thin, and the mask is curved or warped due to the load.

In the ultra-high-quality OLED manufacturing process, errors in fine alignment of several micrometers can lead to failure in pixel deposition, so that a technique capable of preventing deformation such as masking or twisting and clarifying alignment, And the like.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method of manufacturing a frame-integrated mask in which a mask and a frame have an integrated structure.

It is another object of the present invention to provide a method of manufacturing a frame-integrated mask capable of improving the stability of pixel deposition by clearly aligning the mask by integrally forming the mask and the frame.

Another object of the present invention is to provide a method for manufacturing a frame-integrated mask capable of manufacturing a mask having a pattern only by a plating process.

The above object of the present invention can be also achieved by a method for manufacturing a frame-integrated mask in which a mask and a frame for supporting a mask are integrally formed, the method comprising the steps of: (a) forming a plated film by electroplating on a conductive substrate, step; (b) forming a bonding portion including a metal on at least a part of an upper portion of the frame, and at least a part of the rim of the plating film corresponding to the bonding portion; (c) applying at least one of a predetermined temperature and a predetermined pressure to the bonding portion; And (d) removing the application of at least one of the predetermined temperature and the predetermined pressure to adhere the plating film and the frame.

The bond portion may comprise an alloy of at least two metals.

In the step (c), at least a part of the adhering portion changes from a solid phase to a liquid phase, and in the step (d), the liquid film of the adhering portion changes into a solid phase and the plated film and the frame can be adhered.

The bonding portion may include a first metal selected from any one of In, Bi, Sn, and Au; And a second metal selected from the group consisting of In, Bi, Sn, Ag, Cu, Zn, Bi, Sb and Ge and different from the first metal.

The bonding portion may further include a third metal selected from Bi, Sn, Ag, Cu, and Cd, and different from the first metal and the second metal.

The bonding portion may further include a fourth metal selected from Cu and Sb and different from the first metal, the second metal and the third metal.

(c) may be carried out in an inert gas atmosphere.

The conductive substrate may be a doped monocrystalline silicon material.

The insulating portion may be any one of a photoresist, a silicon oxide, and a silicon nitride material.

The frame may have a shape that surrounds the plated film.

In the step (d), the plated film may be adhered to the upper portion of the frame in a state of being subjected to a tensile force to the outside.

In the step (a), the formation of the plated film on the insulating portion is prevented so that the plated film has the pattern.

After the step (a), a step of heat-treating the plated film may be further performed.

The heat treatment may be performed at 300 캜 to 800 캜.

According to the present invention configured as described above, there is an effect that the mask and the frame form an integral structure.

Further, according to the present invention, the alignment of the mask is clarified and the stability of the pixel deposition can be improved.

Further, according to the present invention, there is an effect that a mask having a pattern can be produced only by a plating process.

Further, according to the present invention, there is an effect of improving the adhesion between the mask and the frame.

1 is a schematic view showing an OLED pixel deposition apparatus using FMM.

2 is a schematic view showing a mask.

3 is a schematic view showing a frame-integrated mask according to an embodiment of the present invention.

FIGS. 4 and 5 are schematic views illustrating a process of manufacturing the frame-integrated mask of FIG. 3 according to an embodiment of the present invention.

FIG. 6 is a schematic view showing an OLED pixel deposition apparatus to which the frame-integrated mask of FIG. 3 is applied.

<Explanation of Symbols>

10: Frame-integrated mask

20: mask, plated film

30: Frame

40:

41: Conductive substrate

45:

EA, EM: Adhesive

100: mask, shadow mask, FMM (Fine Metal Mask)

200: OLED pixel deposition apparatus

DP: Display pattern

HP: temperature / pressure application

PP: pixel pattern, mask pattern

The following detailed description of the invention refers to the accompanying drawings, which illustrate, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled, if properly explained. In the drawings, like reference numerals refer to the same or similar functions throughout the several views, and length and area, thickness, and the like may be exaggerated for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily carry out the present invention.

1 is a schematic view showing an OLED pixel deposition apparatus 200 using an FMM 100. FIG. 2 is a schematic view showing a mask.

1, an OLED pixel deposition apparatus 200 generally includes a magnet plate 300 in which a magnet 310 is accommodated and a cooling water line 350 is disposed, And a deposition source supply part 500 for supplying a deposition source 600.

A target substrate 900 such as a glass on which the organic material source 600 is deposited may be interposed between the magnet plate 300 and the source evaporator 500. The FMM 100 for causing the organic material source 600 to be deposited on a pixel-by-pixel basis may be closely adhered to the target substrate 900 or may be disposed in close proximity. The magnet 310 generates a magnetic field and the FMM 100 can be brought into close contact with the target substrate 900 by a magnetic field.

A stick-type mask (see FIG. 2A) and a plate-type mask (see FIG. 2B) are aligned before being brought into close contact with the target substrate 900, Is required. One mask or a plurality of masks may be coupled to the frame 800. The frame 800 is fixedly installed in the OLED pixel deposition apparatus 200, and the mask can be coupled to the frame 800 via a separate attachment, welding process.

The deposition source supply unit 500 reciprocates in the right and left path and can supply the organic material source 600. The organic material sources 600 supplied from the deposition source supply unit 500 pass the pattern PP formed on the FMM mask 100 And may be deposited on one side of the target substrate 900. The deposited organic material source 600 that has passed through the pattern of the FMM mask 100 may act as the pixel 700 of the OLED.

The pattern PP of the FMM mask 100 may be formed obliquely S (or formed into a tapered shape S) in order to prevent non-uniform deposition of the pixel 700 by a shadow effect . The organic material sources 600 passing through the pattern PP in the diagonal direction along the inclined surface can also contribute to the formation of the pixel 700, so that the pixel 700 can be uniformly deposited in thickness as a whole.

The mask 100a shown in FIG. 2 (a) is a stick-shaped mask, and both sides of the stick can be welded and fixed to the OLED pixel deposition frame 800. The mask 100b shown in FIG. 2 (b) is a plate-shaped mask, which can be used in a pixel forming process in a large area and can be used by fixing the rim of the plate to the OLED pixel deposition frame 800 by welding. 2 (c) is an enlarged cross-sectional view taken along the line A-A 'in Figs. 2 (a) and 2 (b).

A plurality of display patterns DP may be formed on the body of the mask 100 (100a, 100b). The display pattern DP is a pattern corresponding to one display such as a smart phone. When the display pattern DP is enlarged, a plurality of pixel patterns PP corresponding to R, G, and B can be confirmed. The pixel patterns PP may have a tapered shape or a tapered shape (see Fig. 2 (c)). A large number of pixel patterns PP constitute one display pattern DP and a plurality of display patterns DP may be formed on the mask 100 (100a, 100b).

That is, in this specification, the display pattern DP is not a concept representing a pattern, but should be understood as a concept that a plurality of pixel patterns (PP) corresponding to one display are clustered. Hereinafter, the pixel pattern PP is mixed with the mask pattern PP.

The mask 100 shown in FIGS. 1 and 2 may cause misalignment between the masks in the process of welding and fixing a plurality of masks to the frame 800, respectively. When a certain mask is warped or twisted It may cause misalignment of the entire masks.

Therefore, the present invention is characterized in that the mask is adhered to the frame in a state in which the mask is formed on the base plate, and the mask is integrated with the frame, thereby preventing deformation of the mask and making alignment clear.

3 is a schematic view showing a frame-integrated mask 10 according to an embodiment of the present invention. 3 (a) is a perspective view of the frame-integrated mask 10, and Fig. 3 (b) is an enlarged cross-sectional view taken along line B-B 'in Fig.

Referring to FIG. 3, the frame-integrated mask 10 includes a mask 20 and a frame 30. The mask 20 may include a plated film 20a in a portion including a plurality of display patterns DP and a pixel pattern PP and a plated film 20b in a rim portion.

The plated films 20a and 20b and the frame 30 have the same material and can be integrally connected to each other with the bonding portion EM as an intermediary. 3, the thickness and the width of the bonding portion EM are shown to be exaggerated for the sake of convenience of explanation. In practice, the portion where the bonding portion EM is interposed is hardly protruded, and the mask 20 and the frame 30 are connected . Although the plated film 20 has been described with reference numerals 20a and 20b according to the formed positions, the plated film 20 may be formed on each portion of the plated films 20 (20a and 20b) (see FIG. 4) electroplated in an actual electroplating process, And is simultaneously formed in the electroplating process.

A mask pattern PP may be formed on the mask 20. It is preferable that the mask pattern PP has a roughly tapered shape having a shape gradually becoming narrower or wider as it goes from the upper part to the lower part and the upper surface of the mask 20 is formed of the object substrate 900 , It is more preferable that the mask pattern PP has a shape in which the width gradually increases from the upper portion to the lower portion.

The pattern width may be formed to a size of several to several tens of micrometers, preferably to a size of less than 30 micrometers. The mask pattern PP can be formed as the generation of the plating film 20 is prevented by the insulating portion 45. [ A concrete formation process will be described later with reference to FIG. The mask pattern PP is the same as the configuration of the pixel pattern PP / display pattern DP described above with reference to FIG.

It is preferable that the frame 30 has a shape that surrounds the rim of the mask 20 so that the mask 20 can be tightly supported without tangled or twisted. Although a rectangular frame 30 is shown in FIG. 3, a circular shape, a polygonal shape, or the like, which is a closed shape, is also possible. The material of the frame 30 is preferably the same as that of the mask 20, or super invar.

As described above, in the frame-integrated mask 10 of the present invention, since the mask 20 is integrally connected to the frame 30, only the frame 30 is moved to and installed in the OLED pixel deposition apparatus 200, Can be performed.

4 and 5 are schematic views showing a process of manufacturing the frame-integrated mask 100 of FIG. 3 according to an embodiment of the present invention.

Referring to Fig. 4 (a), a conductive base material 41 is prepared so that electroforming can be performed. The mother plate 40 including the conductive substrate 41 may be used as a cathode in electroplating.

In the case of a metal, metal oxide may be generated on the surface, impurities may be introduced in the course of metal production, and in the case of a polycrystalline silicon substrate, an inclusion or a grain boundary may exist. In the case of the substrate, there is a high possibility that impurities are contained, and strength. Acid resistance may be weak. An element that interferes with the uniform formation of an electric field on the surface of the base plate 40 (or the base material 41) such as metal oxide, impurities, inclusions, grain boundaries and the like is referred to as " Defect ". Due to the defect, a uniform electric field is not applied to the negative electrode of the above-mentioned material, and a part of the plated film can be formed non-uniformly.

Unevenness of the plated film and the plated film pattern (PP) in realizing ultra-high quality pixels of UHD class or higher may adversely affect pixel formation. Since the pattern width of the FMM and the shadow mask can be formed to a size of several to several tens of micrometers, preferably less than 30 micrometers, even a defect of a few micrometers in size occupies a large proportion in the pattern size of the mask.

Further, in order to remove defects in the cathode body made of the above-mentioned material, an additional process for removing metal oxide, impurities and the like may be performed. In this process, another defect such as etching of the cathode body material may be caused have.

Therefore, the present invention can use a base material 41 made of a single crystal silicon material. The substrate 41 may be doped with a high concentration of 10 ¹⁹ cm ^-3 or more so as to have conductivity. The doping may be performed on the entire surface of the substrate 41 or may be performed only on the surface portion of the substrate 41.

In the case of doped monocrystalline silicon, there is no defect. Thus, there is an advantage that a uniform plating film 20 due to the formation of a uniform electric field on the entire surface at the time of electroplating can be produced. The frame-integrated mask 10 (or FMM) manufactured through the uniform plating film 20 can further improve the image quality level of OLED pixels. Further, since there is no need to carry out an additional process for removing and eliminating defects, there is an advantage that the process cost is reduced and the productivity is improved.

In addition, when the base material 41 made of a silicon material is used, there is an advantage that the insulating part 45 can be formed only by a process of oxidizing and nitriding the surface of the base material 41 if necessary. The insulating part 45 serves to prevent the electrodeposition of the plating film 20 and can form the pattern PP on the plating film 20. [

Next, referring to FIG. 4 (b), an insulating portion 45 may be formed on at least one surface of the substrate 41. The insulating portion 45 may be formed with a pattern, and preferably has a tapered pattern. The insulating portion 45 may be made of silicon oxide, silicon nitride, or the like based on the conductive base 41, or may be a photoresist. When a tapered pattern is formed by using a photoresist, a multiple exposure method, a method of varying exposure intensity for each region, or the like can be used. Thus, the base plate 40 can be manufactured.

Next, referring to FIG. 4C, an anode body (not shown) facing the base plate 40 (or the anode body 40) is prepared. An anode body (not shown) is immersed in a plating liquid (not shown), and all or a part of the base plate 40 may be immersed in a plating liquid (not shown). The plating film 20 (20a, 20b) can be formed by electrodeposition on the surface of the base plate 40 due to the electric field formed between the base plate 40 (or the anode body 40) and the anode body opposing the anode plate. Since the plating film 20 is formed only on the exposed surface 46 of the conductive substrate 41 and the plating film 20 is not formed on the surface of the insulating portion 45, (See Fig. 3 (b)) may be formed.

The plating liquid may be a material of the plating film 20 constituting the mask 20 as an electrolytic solution. In one embodiment, when a thin plate of Invar, which is an iron nickel alloy, is produced as the plating film 20, a mixed solution of a solution containing Ni ions and a solution containing Fe ions may be used as a plating solution. In another embodiment, when a super Invar thin plate, which is an iron nickel cobalt alloy, is made of the plated film 20, a mixed solution of a solution containing Ni ions, a solution containing Fe ions, and a solution containing Co ions May be used as a plating solution. Inverted thin plates and super thinned thin plates can be used as FMM (Fine Metal Mask) and Shadow Mask in the manufacture of OLED. Then, the thin plate-environment is a thermal expansion coefficient of about 1.0 X 10 ^-6 / ℃, Super Invar sheet was about 1.0 X the thermal expansion coefficient of 10 ^-7 / ℃ So that the pattern shape of the mask is not likely to be deformed due to heat energy, and thus it is mainly used in high-resolution OLED manufacturing. In addition, a plating solution for a desired plating film 20 can be used without limitation. In the present specification, the manufacture of the thin insulating film 20 will be described as a main example.

It is preferable to form the plating film 20 only until the upper end of the insulating portion 45 is turned over since the plating film 20 is thickened by electrodeposition from the surface of the substrate 41. [ That is, the thickness of the plating film 20 may be smaller than the thickness of the insulating portion 45. Since the plated film 20 is filled in the pattern space of the insulating part 45 and is electrodeposited, the plating film 20 can be formed having a tapered shape having a reverse phase to the pattern of the insulating part 45.

On the other hand, after the plating film 20 is formed, the plating film 20 can be subjected to a heat treatment. The heat treatment may be performed at a temperature of 300 ° C to 800 ° C. In general, the invar sheet produced by electroplating is higher in thermal expansion coefficient than the invar sheet produced by rolling. Thus, the thermal expansion coefficient can be lowered by performing the heat treatment on the thinned plate, which may cause slight deformation of the thinned plate. Therefore, if the heat treatment is performed while the base plate 40 (or the base material 41) and the mask 20 are adhered to each other, the mask pattern PP formed in the space portion occupied by the insulation portion 45 of the base plate 40, Is kept constant, and there is an advantage that fine deformation due to the heat treatment can be prevented. It is also possible to reduce the coefficient of thermal expansion of the thinned plate even after performing heat treatment on the mask 20 having the mask pattern PP after separating the plate 40 (or the substrate 41) from the plated film 20 .

Next, referring to Fig. 5A, the base plate 40 (or the anode body 40) is lifted out of the plating liquid (not shown). Then, the structure shown in Fig. 4 (c) is arranged on the upper side of the frame 30 in the upside-down direction. On the contrary, the frame 30 may be arranged on the structure of FIG. 4 (c). The frame 30 may have a shape that surrounds the plated film 20.

A bonding portion EA may be formed on the frame 30 on which the plated film 20 is in contact. The plated film 20 and the frame 30 can be adhered to each other by applying a predetermined temperature and pressure to the adhering portion EA so that at least a part of the edges of the plated film 20 can be made to correspond to the adhering portion EA .

The bond portion EA includes a metal, and may have various shapes such as a film, a line, a bundle shape, and the like. Since the adhering portion EA has a thin thickness of about 10 to 30 mu m, even if it is interposed between the mask 20 and the frame 30, it does not affect the step difference.

More specifically, the bonding portion EA may include an alloy of at least two metals. The bonding portion EA in the state of Fig. 5A does not have the adhesive force to adhere the plating film 20 to the frame 30 somewhat, because the bonding portion EA is made of metal, It may be scarce. Therefore, the plated film 20 and the frame 30 can be temporarily fixed to each other by applying a predetermined load so that the plated film 20 and the frame 30 are not twisted with the adhesive portion EA as a medium. Alternatively, clipping means (not shown) may be used to temporarily fix the positions of the plated film 20 and the frame 30. [

The bond portion (EA) has an alloy form of at least two metals and can have eutectic point points. That is, the bonding portion EA includes at least two solid phases, and at the specific temperature / pressure eutectic point, both of the metal solid phases can be in a liquid phase. And, if it leaves the elliptic point, it can become two metal solid again. Thus, it becomes possible to perform a role as an adhesive through phase change from solid phase to liquid phase to solid phase.

The bond portion (EA) may have an alloy form of two metals. In this case, the first metal selected from one of In, Bi, Sn and Au and the second metal selected from any one of In, Bi, Sn, Ag, Cu, Zn, Bi, Sb and Ge, Metal.

Further, the bonding portion EA may have an alloy form of three metals. In this case, the first metal selected from one of In, Bi, Sn, and Au is selected from any one of In, Bi, Sn, Ag, Cu, Zn, Bi, Sb, and Ge, And a third metal selected from Bi, Sn, Ag, Cu, and Cd, and different from the first metal and the second metal.

Further, the bonding portion EA may have an alloy form of four metals. In this case, the first metal selected from one of In, Bi, Sn, and Au is selected from any one of In, Bi, Sn, Ag, Cu, Zn, Bi, Sb, and Ge, , A third metal selected from Bi, Sn, Ag, Cu, and Cd and different from the first metal and the second metal, and Cu and Sb; and the first metal, And a fourth metal that is different from the metal.

[Table 1] below are examples of materials that can constitute the bonding portion (EA).

Element 1 and Wt%		Element 2 and Wt%		Element 3 and Wt%		Element 4 and Wt%		Solidus ℃	liquidus ℃
In	44	Sn	42	CD	14			93	93
In	51.5	Bi	32	Sn	16.5			95	95
In	52	Sn	48					120	122
Bi	57	Sn	42	Ag	One			138	140
Bi	57	Sn	43					139	139
In	97	Ag	3					144	144
In	100							156	156
Sn	88.5	In	8	Ag	3	Cu	0.5	195	201
Sn	91.2	Zn	8.8					199	199
Sn	93.5	Bi	5	Ag	1.5			200	225
Sn	93.3	Ag	3.1	Bi	3.1	Cu	0.5	209	212
Sn	92	Bi	4.7	Ag	3.3			210	215
Sn	96.3	Ag	2.5	Cu	0.7	Sb	0.5	210	216
Sn	95	In	5					215	222
Sn	96.5	Ag	3	Cu	0.5			217	218
Sn	95.5	Ag	3.9	Cu	0.6			217	218
Sn	96	Ag	3.5	Cu	0.5			217	218
Sn	96.5	Ag	3.5					221	221
Sn	95	Ag	5					221	240
Sn	99.3	Cu	0.7					227	227
Sn	97	Cu	3					227	300
Sn	100							232	232
Sn	97	Sb	3					232	240
Sn	65	Ag	25	Sb	10			233	233
Au	80	Sn	20					278	278
Au	79	Sn	21					278	290
Au	78	Sn	22					280	303
Au	88	Ge	12					356	356

Next, referring to FIG. 5 (b), a predetermined temperature / pressure (HP) can be applied to the bonding portion EA. The temperature and pressure for changing the metals of the bonding portion (EA) from the solid phase to the liquid phase can be applied. Since the temperature of the eutectic point is exemplified in Table 1, an appropriate temperature and pressure can be selected according to the metal constituting the bonding portion EA.

On the other hand, it is possible to use a separate device (not shown) for applying a predetermined pressure so as not to cause a void, and supplying an antioxidant gas / atmosphere (inert gas, vacuum, etc.) for prevention of eutectic oxidation. Under the application of a predetermined temperature and pressure, the metals of the bonding portion EA can be changed into a liquid state while melting in the solid phase.

5 (c), when the application of the predetermined temperature / pressure HP is released, the liquid bonding portion EA is again turned into the solid bonding portion EM and the mask 20 and the frame (30). In other words, it becomes possible to function as a solid eutectic bonding portion (EM) for bonding the mask 20 and the frame 30.

The bonding portion EM (or the eutectic bonding portion (EM)) containing a metal does not contain volatile organic substances at all, unlike general organic adhesives. Accordingly, when the frame-integrated mask is provided in the OLED pixel deposition apparatus 200, the volatile organic material of the organic adhesive reacts with the process gas to prevent the pixel of the OLED from adversely affecting the pixel deposition process. In addition, it becomes possible to prevent an outgassing such as an organic substance contained in the organic adhesive itself from adversely affecting the chamber of the OLED pixel deposition apparatus 200 or depositing the OLED pixel as an impurity.

Further, since the adhesive portion EM remains in a metal solid state in a state in which the mask 20 and the frame 30 are adhered to each other, the OLED organic cleaning liquid can not be cleaned and can have corrosion resistance. Thus, even if the frame-integrated mask 10 is repeatedly used in the OLED pixel process, the adhesive portion EM can maintain the adhesive function.

In addition, since the bonding portion EM includes two or more metals, the mask 20 and the frame 30, which are the same metal as the organic adhesive, can be connected with high adhesiveness. That is, the bonding force at the surface is high between the mask 20, which is a metallic material such as invar or the frame 30. Moreover, since it is a metal material, it has an advantage of low thermal damage and low thermal strain coefficient (thermal expansion coefficient).

Taking all of the above into consideration, the bonding portion (EM) of the present invention is more excellent in process stability than the organic adhesive, and exhibits an effect of firmly adhering the two structures between the mask (20) and the frame (30). Accordingly, the alignment reliability of the frame-integrated mask 10 can be improved to a great extent.

5 (c), when the bonding film EM is bonded from the liquid phase to the solid phase and the plating film 20 is bonded to the frame 30, the plating film 20 is bonded to the frame 30 in the direction of the frame 30, And can be adhered while being subjected to a tensile force in a direction. The smaller volume of the solid phase than the liquid phase can also contribute to the application of the tensile force. The plated film 20 is tensioned in the outward direction and can be held in a stretched state toward the frame 30 so that alignment of the mask pattern PP is not disturbed even by a temperature change or the like.

Next, referring to FIG. 5 (d), the insulating portion 45 can be removed. A known technique that removes only the insulating portion 45 such as a photoresist, silicon oxide, or silicon nitride and does not affect the rest of the structure can be used without limitation. On the other hand, in the case where the insulating portion 45 is formed integrally with the conductive substrate 41 using silicon oxide or silicon nitride, the step of removing the insulating portion 45 is omitted and the conductive substrate 41 is separated from the plating film 20, (45) can be removed together.

The conductive substrate 41 can be separated in the upper direction of the mask 20 and the frame 30. When the conductive substrate 41 is detached, the shape of the mask 20 adhered to the frame 30 through the bonding portion EM appears.

FIG. 6 is a schematic view showing an OLED pixel deposition apparatus 200 to which the frame-integrated mask 10 of FIG. 3 is applied.

6, alignment of the mask 10 is completed only by bringing the frame-integrated mask 10 into close contact with the target substrate 900 and fixing only the frame 30 portion inside the OLED pixel deposition apparatus 200 . The plated films 20 (20a and 20b) of the mask 20 are integrally connected to the frame 30 through the bonding portion EM and are tightly supported so that the mask 20 is struck or twisted by a load And the like can be prevented. Thus, alignment of the frame-integrated mask 10 necessary for pixel deposition can be clarified.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. Variations and changes are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.

Claims (14)

1. A method of manufacturing a frame-integrated mask in which a mask and a frame for supporting the mask are integrally formed,

   (a) forming a plated film by electroplating on a conductive substrate having a patterned insulating portion formed on one surface thereof;

   (b) forming a bonding portion including a metal on at least a part of an upper portion of the frame, and at least a part of the rim of the plating film corresponding to the bonding portion;

   (c) applying at least one of a predetermined temperature and a predetermined pressure to the bonding portion; And

   (d) releasing the application of at least one of a predetermined temperature and a predetermined pressure to adhere the plated film to the frame

   Wherein the frame-integrated mask comprises a plurality of mask patterns.
2. The method according to claim 1,

   Wherein the bonding portion comprises an alloy of at least two metals.
3. 3. The method of claim 2,

   (c), at least a part of the adhesive portion changes from a solid phase to a liquid phase,

   (d), in which the liquid phase of the adhering portion is solidified again to adhere the plated film to the frame.
4. The method according to claim 1,

   In the adhesive portion,

   A first metal selected from any one of In, Bi, Sn, and Au; And

   A second metal selected from the group consisting of In, Bi, Sn, Ag, Cu, Zn, Bi, Sb and Ge,

   Wherein the mask is a mask.
5. 5. The method of claim 4,

   In the adhesive portion,

   Bi, Sn, Ag, Cu, and Cd, and the third metal is different from the first metal and the second metal.

   Further comprising the steps of:
6. 6. The method of claim 5,

   In the adhesive portion,

   Cu, and Sb, and the fourth metal is different from the first metal, the second metal, and the third metal.

   Further comprising the steps of:
7. The method according to claim 1,

   (c) is performed in an inert gas atmosphere.
8. The method according to claim 1,

   Wherein the conductive substrate is a doped single crystal silicon material.
9. The method according to claim 1,

   Wherein the insulating portion is one of a photoresist, a silicon oxide, and a silicon nitride material.
10. The method according to claim 1,

    Wherein the frame has a shape surrounding the plated film.
11. The method according to claim 1,

    and in the step (d), the plated film is adhered to an upper portion of the frame in a state of being subjected to a tensile force to the outside.
12. The method according to claim 1,

    In step (a)

    Wherein formation of a plating film on the insulating portion is prevented so that the plating film has a pattern.
13. The method according to claim 1,

    further comprising the step of heat treating the plating film after the step (a).
14. 14. The method of claim 13,

    And the heat treatment is performed at 300 캜 to 800 캜.

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