KR20180122173A - Producing method of mask integrated frame - Google Patents

Abstract

The present invention relates to a method for manufacturing a frame-integrated mask. A method for manufacturing a frame-integrated mask (10) according to the present invention is a method for manufacturing a frame-integrated mask (10) in which a mask (20) and a frame (30) supporting the mask (20) are integrally formed, and comprises the steps of: (a) forming a first plating film (20′: 20a, 20b) by electrostatic plating on a conductive substrate (41) having a patterned first insulation unit (45) formed on one surface; (b) forming a second insulation unit (47) on the remaining area except an edge area (48) of the first plating film (20′); (c) forming an adhesion unit (50) on at least a part of the upper part of the frame (30), and attaching at least a part of the exposed first plating film (20′) to the adhesion unit (50); (d) forming a second plating film (20c) by electrostatic plating on the inner surface of the frame (30) and the first plating film (20′) exposed between the adhesion unit (50) and the second insulation unit (47); (e) removing the first insulation unit (45) and the second insulation unit (47); (f) separating the conductive substrate (41) from the first plating film (20′); (g) irradiating laser (L) onto a boundary of a release film (20d) of the first plating film (20′) corresponding to the adhesion unit (50), and cleaning (C) the adhesion unit (50); and (h) removing (P) the release film (20d) of the first plating film (20′).

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a frame-

The present invention relates to a method of manufacturing a frame-integrated mask. More particularly, the present invention relates to a method of manufacturing a frame-integrated mask capable of preventing the deformation of the mask and making the alignment clear, and preventing deformation, contamination, etc. of the mask by the adhesive, will be.

Recently, electroforming methods have been studied in the manufacture of thin plates. In the electroplating method, an anode body and a cathode body are immersed in an electrolytic solution, and a power source is applied to electrodeposit a metal thin plate on the surface of the cathode body, so that an ultra thin plate can be manufactured and mass production can be expected.

On the other hand, FMM (Fine Metal Mask) method for depositing an organic material at a desired position by bringing a thin film metal mask (Shadow Mask) into close contact with a substrate is mainly used as a technique of forming a pixel in an OLED manufacturing process.

In a conventional OLED manufacturing process, a mask is formed in a stick shape or a plate shape, and then a mask is welded and fixed to an OLED pixel deposition frame. In order to manufacture a large area OLED, a plurality of masks can be fixed to the OLED pixel deposition frame. Further, in the process of welding and fixing to the frame, there is a problem that the thickness of the mask film is too thin, and the mask is curved or warped due to the load.

In the ultra-high-quality OLED manufacturing process, errors in fine alignment of several micrometers can lead to failure in pixel deposition, so that a technique capable of preventing deformation such as masking or twisting and clarifying alignment, And the like.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method of manufacturing a frame-integrated mask in which a mask and a frame have an integrated structure.

It is another object of the present invention to provide a method of manufacturing a frame-integrated mask capable of improving the stability of pixel deposition by clearly aligning the mask by integrally forming the mask and the frame.

Another object of the present invention is to provide a method for manufacturing a frame-integrated mask capable of manufacturing a mask having a pattern only by a plating process.

The above object of the present invention can be also achieved by a method of manufacturing a frame-integrated mask in which a mask and a frame for supporting a mask are integrally formed, the method comprising the steps of: (a) forming, on a conductive substrate having a first insulating portion patterned on one surface thereof, Forming a plated film; (b) forming a second insulating portion on a region other than the rim region of the first plating film; (c) forming an adhesive portion on at least a part of the upper portion of the frame, and bonding at least a part of the exposed first plated film to the adhesive portion; (d) forming a first plating film exposed between the bonding portion and the second insulating portion and a second plating film by electroplating on the inner surface of the frame; (e) removing the first insulating portion and the second insulating portion; (f) separating the conductive substrate from the first plated film; (g) irradiating a laser beam on a boundary of the peeling film of the first plated film corresponding to the adhering portion, and cleaning the adhering portion; And (h) removing the peeling film of the first plated film.

The base plate may be made of a single crystal silicon material.

The first insulating portion or the second insulating portion may be any one of photoresist, silicon oxide, and silicon nitride.

The frame may have a shape surrounding the first plated film and the second plated film.

The second plating film may be connected to the one surface rim of the first plating film and integrated with the first plating film.

The second plating film may be formed on the inner side surface of the frame in a state of applying a tensile force to the outside of the first plating film.

The inner side of the frame may be at an acute angle with the upper side of the frame.

In the step (b), formation of the first plating film on the first insulating portion is prevented so that the first plating film has a pattern.

After the step (d), the step of heat-treating the first plating film and the second plating film may be further performed.

The heat treatment may be performed at 300 캜 to 800 캜.

Between step (d) and step (e), the step of removing the first insulating part and the second insulating part may be further performed.

According to the present invention configured as described above, there is an effect that the mask and the frame form an integral structure.

Further, according to the present invention, the alignment of the mask is clarified and the stability of the pixel deposition can be improved.

Further, according to the present invention, there is an effect that a mask having a pattern can be produced only by a plating process.

Further, according to the present invention, there is an effect of completely removing the adhesive portion.

1 is a schematic view showing an OLED pixel deposition apparatus using FMM.
2 is a schematic view showing a mask.
3 is a schematic view showing a frame-integrated mask according to an embodiment of the present invention.
FIGS. 4 and 5 are schematic views illustrating a process of manufacturing the frame-integrated mask of FIG. 3 according to an embodiment of the present invention.
FIG. 6 is a schematic view showing an OLED pixel deposition apparatus to which the frame-integrated mask of FIG. 3 is applied.

The following detailed description of the invention refers to the accompanying drawings, which illustrate, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled, if properly explained. In the drawings, like reference numerals refer to the same or similar functions throughout the several views, and length and area, thickness, and the like may be exaggerated for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily carry out the present invention.

1 is a schematic view showing an OLED pixel deposition apparatus 200 using an FMM 100. FIG. 2 is a schematic view showing a mask.

1, an OLED pixel deposition apparatus 200 generally includes a magnet plate 300 in which a magnet 310 is accommodated and a cooling water line 350 is disposed, And a deposition source supply part 500 for supplying a deposition source 600.

A target substrate 900 such as a glass on which the organic material source 600 is deposited may be interposed between the magnet plate 300 and the source evaporator 500. The FMM 100 for causing the organic material source 600 to be deposited on a pixel-by-pixel basis may be closely adhered to the target substrate 900 or may be disposed in close proximity. The magnet 310 generates a magnetic field and the FMM 100 can be brought into close contact with the target substrate 900 by a magnetic field.

A stick-type mask (see FIG. 2A) and a plate-type mask (see FIG. 2B) are aligned before being brought into close contact with the target substrate 900, Is required. One mask or a plurality of masks may be coupled to the frame 800. The frame 800 is fixedly installed in the OLED pixel deposition apparatus 200, and the mask can be coupled to the frame 800 via a separate attachment, welding process.

The deposition source supply unit 500 reciprocates in the right and left path and can supply the organic material source 600. The organic material sources 600 supplied from the deposition source supply unit 500 pass the pattern PP formed on the FMM mask 100 And may be deposited on one side of the target substrate 900. The deposited organic material source 600 that has passed through the pattern of the FMM mask 100 may act as the pixel 700 of the OLED.

The pattern PP of the FMM mask 100 may be formed obliquely S (or formed into a tapered shape S) in order to prevent non-uniform deposition of the pixel 700 by a shadow effect . The organic material sources 600 passing through the pattern PP in the diagonal direction along the inclined surface can also contribute to the formation of the pixel 700, so that the pixel 700 can be uniformly deposited in thickness as a whole.

The mask 100a shown in FIG. 2 (a) is a stick-shaped mask, and both sides of the stick can be welded and fixed to the OLED pixel deposition frame 800. The mask 100b shown in FIG. 2 (b) is a plate-shaped mask, which can be used in a pixel forming process in a large area and can be used by fixing the rim of the plate to the OLED pixel deposition frame 800 by welding. 2 (c) is an enlarged cross-sectional view taken along the line A-A 'in Figs. 2 (a) and 2 (b).

A plurality of display patterns DP may be formed on the body of the mask 100 (100a, 100b). The display pattern DP is a pattern corresponding to one display such as a smart phone. When the display pattern DP is enlarged, a plurality of pixel patterns PP corresponding to R, G, and B can be confirmed. The pixel patterns PP may have a tapered shape or a tapered shape (see Fig. 2 (c)). A large number of pixel patterns PP constitute one display pattern DP and a plurality of display patterns DP may be formed on the mask 100 (100a, 100b).

That is, in this specification, the display pattern DP is not a concept representing a pattern, but should be understood as a concept that a plurality of pixel patterns (PP) corresponding to one display are clustered. Hereinafter, the pixel pattern PP is mixed with the mask pattern PP.

The mask 100 shown in FIGS. 1 and 2 may cause misalignment between the masks in the process of welding and fixing a plurality of masks to the frame 800, respectively. When a certain mask is warped or twisted It may cause misalignment of the entire masks.

Therefore, the present invention is characterized in that the mask and the frame are integrally formed so as to prevent the deformation of the mask, thereby making the alignment clear.

3 is a schematic view showing a frame-integrated mask 10 according to an embodiment of the present invention. 3 (a) is a perspective view of the frame-integrated mask 10, and Fig. 3 (b) is an enlarged cross-sectional view taken along line B-B 'in Fig.

Referring to FIG. 3, the frame-integrated mask 10 includes a mask 20 and a frame 30. The mask 20 is connected to at least a part of the first plating film 20 ': 20a, 20b and the first plating film frame 20b including a plurality of display patterns DP and the pixel pattern PP, And a second plating film 20c connected to the frame 30 on the inner surface of the frame 30 to support the first plating films 20 ': 20a and 20b. The first plated films 20a and 20b and the second plated film 20c may be integrally connected with the same material and the frame 30 may be integrally connected with the same material as the plated film. Although the first plated film 20 'is denoted by 20a and 20b according to the formed positions, the first plated films 20': 20a and 20b (see FIG. 4) that are electrodeposited in an actual electroplating process ] In the electroplating process.

A mask pattern PP may be formed on the mask 10. It is preferable that the mask pattern PP has a roughly tapered shape having a shape gradually becoming narrower or wider toward the lower portion from the upper portion to the lower portion, , It is more preferable that the mask pattern PP has a shape in which the width gradually increases from the upper portion to the lower portion.

The pattern width may be formed to a size of several to several tens of micrometers, preferably to a size of less than 30 micrometers. The mask pattern PP can be formed as the generation of the plating film 20 'is prevented by the insulating portion 45. [ A concrete formation process will be described later with reference to FIG. The mask pattern PP is the same as the configuration of the pixel pattern PP / display pattern DP described above with reference to FIG.

The second plated film 20c can be bonded to at least the inner side surface of the frame 30. More specifically, the second plated film 20c, which is a region other than the region of the first plated film 20 ', in which the mask pattern PP is formed in the mask 20, can be bonded to the frame 30 have.

It is preferable that the frame 30 has a shape that surrounds the rim of the mask 20 so that the mask 20 can be tightly supported without tangled or twisted. In other words, the frame 30 may have a shape surrounding the first plated films 20a and 20b and the second plated film 20c. Although a rectangular frame 30 is shown in FIG. 3, a circular shape, a polygonal shape, or the like, which is a closed shape, is also possible. The material of the frame 30 is preferably the same as that of the mask 20, or super invar.

On the other hand, the inner side surface of the frame 30 may not be perpendicular to the upper surface of the frame 30, but may be an acute angle. That is, the frame 30 may have a shape in which the inner width increases from the upper portion to the lower portion. A second plated film 20c is formed on the inner surface of the frame 30 and the second plated film 20c and the integral first plated film frame 20b are connected to each other in the horizontal direction. Since the first plated film rim 20b and the second plated film 20c are connected in a tilted manner without being connected in a vertical direction, adhesion with the frame 30 can be improved. That is, when the second plating film 20c is electrodeposited on the inner surface of the inclined frame 30, the area of the plated film bonded to the frame 30 is widened, so that the adhesion can be improved. Since the second plated film 20c interposed between the inner surface of the frame 30 and the first plating film frame 20b forms an obtuse angle, the stress acting on the edge of the second plated film 20c And the first plated films 20a and 20b can be supported in such a state that a tensile force is applied to the first plated films 20a and 20b toward the frame 30 (the inside direction of the frame 30) .

As described above, in the frame-integrated mask 10 of the present invention, since the mask 20 is integrally connected to the frame 30, only the frame 30 is moved to and installed in the OLED pixel deposition apparatus 200, Can be performed.

4 and 5 are schematic views showing a process of manufacturing the frame-integrated mask 100 of FIG. 3 according to an embodiment of the present invention.

Referring to Fig. 4 (a), a conductive base material 41 is prepared so that electroforming can be performed. The mother plate 40 including the conductive substrate 41 may be used as a cathode in electroplating.

In the case of a metal, metal oxide may be generated on the surface, impurities may be introduced in the course of metal production, and in the case of a polycrystalline silicon substrate, an inclusion or a grain boundary may exist. In the case of the substrate, there is a high possibility that impurities are contained, and strength. Acid resistance may be weak. An element that interferes with the uniform formation of an electric field on the surface of the base plate 40 (or the base material 41) such as metal oxide, impurities, inclusions, grain boundaries and the like is referred to as "Defect ". Due to the defect, a uniform electric field is not applied to the negative electrode of the above-mentioned material, so that a part of the plated film (the first plated film 20 ') can be formed non-uniformly.

Unevenness of the plated film and the plated film pattern (PP) in realizing ultra-high quality pixels of UHD class or higher may adversely affect pixel formation. Since the pattern width of the FMM and the shadow mask can be formed to a size of several to several tens of micrometers, preferably less than 30 micrometers, even a defect of a few micrometers in size occupies a large proportion in the pattern size of the mask.

Further, in order to remove defects in the cathode body made of the above-mentioned material, an additional process for removing metal oxide, impurities and the like may be performed. In this process, another defect such as etching of the cathode body material may be caused have.

Therefore, the present invention can use a base material 41 made of a single crystal silicon material. The substrate 41 may be doped with a high concentration of 10 < ¹⁹ > or more so as to have conductivity. The doping may be performed on the entire surface of the substrate 41 or may be performed only on the surface portion of the substrate 41.

In the case of doped monocrystalline silicon, there is no defect. Therefore, there is an advantage that a uniform plating film (first plating film 20 ') due to the formation of a uniform electric field on the entire surface at the time of electroplating can be produced. The frame-integrated mask 10 [or FMM] manufactured through the uniform plating film 20 'can further improve the image quality level of OLED pixels. Further, since there is no need to carry out an additional process for removing and eliminating defects, there is an advantage that the process cost is reduced and the productivity is improved.

In addition, when the base material 41 made of a silicon material is used, there is an advantage that the insulating part 45 can be formed only by a process of oxidizing and nitriding the surface of the base material 41, if necessary. The insulating part 45 prevents the electrodeposition of the first plating film 20 'and can form the pattern PP on the first plating film 20'.

Next, referring to FIG. 4 (b), a first insulating portion 45 may be formed on at least one surface of the substrate 41. The first insulating portion 45 may be formed with a pattern, and preferably has a tapered pattern. The first insulating portion 45 may be made of silicon oxide, silicon nitride, or the like using a conductive base 41 as a base, and a photoresist may be used. When a tapered pattern is formed by using a photoresist, a multiple exposure method, a method of varying exposure intensity for each region, or the like can be used. Thus, the base plate 40 can be manufactured.

Next, referring to FIG. 4C, an anode body (not shown) facing the base plate 40 (or the anode body 40) is prepared. An anode body (not shown) is immersed in a plating liquid (not shown), and all or a part of the base plate 40 may be immersed in a plating liquid (not shown). The first plating films 20 ': 20a and 20b may be formed by electrodeposition on the surface of the base plate 40 due to the electric field formed between the base plate 40 (or the anode body 40) and the anode body facing each other . However, since the first plated film 20 'is formed only on the exposed surface of the conductive substrate 21 and the first plated film 20' is not formed on the surface of the first insulated portion 45, (See Fig. 3 (b)) may be formed on the pattern 20 '.

The plating liquid may be a material of the plating film 20 constituting the mask 20 as an electrolytic solution. In one embodiment, when a thin plate of Invar, which is an iron nickel alloy, is produced as the plating film 20, a mixed solution of a solution containing Ni ions and a solution containing Fe ions may be used as a plating solution. In another embodiment, when a super Invar thin plate, which is an iron nickel cobalt alloy, is made of the plated film 20, a mixed solution of a solution containing Ni ions, a solution containing Fe ions, and a solution containing Co ions May be used as a plating solution. Inverted thin plates and super thinned thin plates can be used as FMM (Fine Metal Mask) and Shadow Mask in the manufacture of OLED. Then, the thin plate-environment is a thermal expansion coefficient of about 1.0 X 10 ^-6 / ℃, Super Invar sheet was about 1.0 X the thermal expansion coefficient of 10 ^-7 / ℃ So that the pattern shape of the mask is not likely to be deformed due to heat energy, and thus it is mainly used in high-resolution OLED manufacturing. In addition, a plating solution for a desired plating film 20 can be used without limitation. In the present specification, the manufacture of the thin insulating film 20 will be described as a main example.

It is preferable to form the first plated film 20 'only before passing over the upper end of the first insulating portion 45 because the first plated film 20' is thickened by electrodeposition from the surface of the substrate 41. That is, the thickness of the first plating film 20 'may be smaller than the thickness of the first insulating portion 45. Since the first plated film 20 'is filled in the pattern space of the first insulating portion 45 and is electrodeposited, the first plated film 20' can be formed having a taper shape having a reverse phase to the pattern of the first insulating portion 45.

4 (d), the base plate 40 (or the anode body 40) is lifted out of the plating liquid (not shown). Then, the second insulating portion 47 can be formed. The second insulating portion 47 is preferably made of the same material as the first insulating portion 45. The second insulating portion 47 may be formed on the remaining region except for the rim region 48 of the first plating film 20 '. That is, the second insulating portion 47 covers the entire first insulating portion 45 and the first plating film 20a, and can cover a part of the first plating film rim 20b. The rim region 48 of the first plated film 20 'may be exposed.

Next, referring to FIG. 5 (a), the structure of FIG. 4 (d) is arranged on the upper side of the frame 30 in an inverted position. Conversely, it is also possible to dispose the frame 30 on the structure in Fig. 4 (d). The frame 30 may have a shape that surrounds the first plated film 20 '. Preferably, the frame 30 may have a shape corresponding to the remaining rim area 48 except for the exposed area 49 of the first plated film 20 '.

The bonding portion 50 may be formed on the frame 30 on which the first plated film 20 'is contacted. As the adhesive for the adhesive portion 50, an epoxy resin adhesive or the like may be used. The rim of the first plated film 20 'can be adhesively fixed to the upper portion of the frame 30 by the bonding portion 50. The edge portion of the first plating film 20 'adhered to the adhering portion 50 is removed at a later point, so that the peeling film 20d (refer to (e) of FIG. 5) is referred to. It is to be noted that the widths of the bonding portion 50 and the peeling film 20d are exaggerated for convenience of explanation. It is sufficient that the bonding portion 50 is coated to such an extent that the first plated film 20 'is temporarily adhered and fixed to the frame 30 before forming the second plated film 20c.

Next, referring to FIG. 5 (b), electroplating may be performed to electrodeposition the second plating film 20c. The second plated film 20c can be electrodeposited on the inner surface of the frame 30 and the surface 49 of the first plated film 20 'exposed between the second insulating portion 47 and the bonding portion 50 . The second plated film 20c is thickened while being electrodeposited from the exposed surface 49 of the first plated film 20 ' . That is, the thickness of the second plating film 20c may be smaller than the thickness of the second insulating portion 47. [ The first plated film 20 'and the frame 30 are integrally bonded to each other while the second plated film 20c is electrodeposited on the exposed surface 49 of the first plated film 20' As shown in FIG. Since the second plated film 20c is integrally connected to the rim 20b of the first plated film 20 'and is electrodeposited, the second plated film 20c is stretched in the direction of the frame 30 (inward direction of the frame 30) And can support the first plating film 20 '. Thus, the mask 20 stretched tightly toward the frame 30 can be formed integrally with the frame 30, without having to separately perform the process of stretching and aligning the mask.

On the other hand, after the first plated films 20a and 20b and the second plated film 20c are formed, the first plated films 20a and 20b and the second plated film 20c can be subjected to heat treatment. The heat treatment may be performed at a temperature of 300 ° C to 800 ° C. In general, the invar sheet produced by electroplating is higher in thermal expansion coefficient than the invar sheet produced by rolling. Thus, the thermal expansion coefficient can be lowered by performing the heat treatment on the thinned plate, which may cause slight deformation of the thinned plate. Therefore, if the heat treatment is performed while the base plate 40 (or the base material 41) and the mask 20 are adhered, a mask pattern (not shown) formed in the space portion occupied by the insulation portions 45, 47 of the base plate 40 PP) is kept constant, and there is an advantage that fine deformation due to the heat treatment can be prevented. Further, even if the mask 20 having the mask pattern PP is subjected to the heat treatment after the mother substrate 40 (or the substrate 41) is separated from the first plating films 20a and 20b, the thermal expansion of the in- There is an effect of lowering the coefficient.

Next, referring to FIG. 5 (c), the first insulating portion 45 and the second insulating portion 47 can be removed. A known technique that removes only the first insulating portion 45 and the second insulating portion 47 such as photoresist, silicon oxide, and silicon nitride and does not affect the rest of the structure can be used without limitation. On the other hand, in the case where the insulating portion is formed of silicon oxide or silicon nitride, the step of removing them may be omitted and the following process of FIG. 5D may be performed immediately. The silicon oxide and silicon nitride formed integrally with the conductive substrate 41 can be removed / removed together through the substrate separation process shown in FIG. 5 (d).

Next, referring to FIG. 5 (d), the conductive substrate 41 can be separated from the first plated film 20 '. The conductive substrate 41 can be separated in the upper direction of the mask 20 and the frame 30. When the conductive substrate 41 is separated, a form in which the mask 20 and the frame 30 supporting the mask 20 are integrally formed appears.

On the other hand, in the frame-integrated mask performed up to the step (d) in FIG. 5, the adhesive portion 50 remains. The adhesive of the adhesive portion 50 has an effect of temporarily fixing the mask 20, but the thermal expansion coefficient of the adhesive and the invar mask 20 are different, and the adhesive is twisted by the adhesive 20 in accordance with the temperature change in the pixel forming process May cause problems. In addition, contaminants generated by the reaction of the adhesive with the process gas may adversely affect the pixels of the OLED, and outgas such as organic solvents contained in the adhesive itself may contaminate the pixel processing chamber or may be deposited on the OLED pixels as impurities Adverse effects can be caused. Further, as the adhesive is gradually removed, a problem that the mask 20 is detached from the frame 30 may occur. It is therefore necessary to clean the bonding portion 50. However, since the bonding portion 50 and the first plating film 20b are bonded together, it is difficult to clean the bonding portion 50 from the outside, and the bonding portion 50 is forcibly cleaned There is also a possibility that deformation may occur in the plating film 20. [

Therefore, the present invention is characterized in that only the bonding portion 50 is completely removed without affecting the plating film 20 by performing the processes as shown in FIGS. 5 (e) and 5 (f).

5E, a laser beam L is irradiated to a region boundary of the first plating film 20 'corresponding to the bonding portion 50 to form the first plating film 20' and the peeling film 20d. A separating line can be formed between the electrodes. That is, the laser L is irradiated to the boundary of the peeling film 20d in the first plated film 20 'and the peeling film 20d is separated from the first plating film 20' by laser trimming can do. However, the peeling film 20d is not directly peeled off but remains bonded to the bonding portion 50.

5 (f), the bonding portion 50 can be cleaned (C). A known cleaning material can be used without limitation, depending on the adhesive, and the cleaning liquid can penetrate from the side surface of the plated film 20 to clean (C) the bonding portion 50. The adhesive portion 50 can be completely removed.

Then, the peeling film 20d separated from the first plating film 20 'is peeled (P). The peeling film 20d can be immediately peeled off because the peeling film 20d is separated from the first plating film 20 'instead of being adhered to the frame 30 after the peeling film 50 is removed.

5 (g), the frame-integrated mask 10 in which the mask 20 and the frame 30 are formed integrally is completed. The frame-integrated mask 10 of the present invention eliminates only the part of the rim 20b (the peeling film 20d) of the first plated film 20 'in order to remove the bonding part 50 without the bonding part 50, The first plated films 20a and 20b and the second plated film 20c which contribute to the pixel process are not affected at all.

FIG. 6 is a schematic view showing an OLED pixel deposition apparatus 200 to which the frame-integrated mask 10 of FIG. 3 is applied.

6, alignment of the mask 10 is completed only by bringing the frame-integrated mask 10 into close contact with the target substrate 900 and fixing only the frame 30 portion inside the OLED pixel deposition apparatus 200 . The first plated films 20a and 20b of the mask 20 are integrally connected to the second plated film 20c so that the rim thereof is tightly supported and the second plated film 20c is formed on the frame 30, It is possible to prevent the mask 20 from being deformed such as being struck or twisted by a load. Thus, alignment of the mask 10 necessary for pixel deposition can be clarified.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. Variations and changes are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.

10: Frame-integrated mask
20: mask, plated film
20 ', 20a, 20b: a first plating film
20c: second plating film
20d: peeling film
30: Frame
40:
41: Conductive substrate
45: first insulating portion
47: second insulating portion
50:
100: mask, shadow mask, FMM (Fine Metal Mask)
200: OLED pixel deposition apparatus
DP: Display pattern
PP: pixel pattern, mask pattern

Claims (11)

A method of manufacturing a frame-integrated mask in which a mask and a frame for supporting the mask are integrally formed,
(a) forming a first plating film by electroplating on a conductive substrate having a patterned first insulating portion on one surface thereof;
(b) forming a second insulating portion on a region other than the rim region of the first plating film;
(c) forming an adhesive portion on at least a part of the upper portion of the frame, and bonding at least a part of the exposed first plated film to the adhesive portion;
(d) forming a first plating film exposed between the bonding portion and the second insulating portion and a second plating film by electroplating on the inner surface of the frame;
(e) separating the conductive substrate from the first plated film;
(f) irradiating a laser on the boundary of the peeling film of the first plated film corresponding to the adhering portion, and cleaning the adhering portion; And
(g) removing the peeling film of the first plated film
Wherein the frame-integrated mask comprises a plurality of mask patterns. The method according to claim 1,
Wherein the base plate is made of a single crystal silicon material. The method according to claim 1,
Wherein the first insulating portion or the second insulating portion is one of a photoresist, a silicon oxide, and a silicon nitride material. The method according to claim 1,
Wherein the frame has a shape surrounding the first plated film and the second plated film. The method according to claim 1,
And the second plating film is connected to the one surface rim of the first plating film and integrated with the first plating film. The method according to claim 1,
And the second plating film is formed on the inner side surface of the frame in a state of applying a tensile force to the outside of the first plating film. The method according to claim 1,
And the inner side surface of the frame forms an acute angle with the upper surface of the frame. The method according to claim 1,
In step (a)
Wherein formation of the first plating film on the first insulating portion is prevented so that the first plating film has a pattern. The method according to claim 1,
further comprising the step of heat treating the first plated film and the second plated film after the step (d). 10. The method of claim 9,
And the heat treatment is performed at 300 캜 to 800 캜. The method according to claim 1,
further comprising the step of removing the first insulating portion and the second insulating portion between the step (d) and the step (e).

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