WO2018097532A1

WO2018097532A1 - Method for producing frame-integrated mask

Info

Publication number: WO2018097532A1
Application number: PCT/KR2017/012862
Authority: WO
Inventors: 장택용
Original assignee: 주식회사 티지오테크
Priority date: 2016-11-22
Filing date: 2017-11-14
Publication date: 2018-05-31

Abstract

The present invention relates to a method for producing a frame-integrated mask. The method for producing a frame-integrated mask (10) according to the present invention comprises the steps of: (a) providing a base plate (40) having, on one surface thereof, patterned (46) insulation parts (45); (b) connecting a frame (30) to at least one side (42) of the base plate (40); (c) using the base plate (40) and frame (30) as a cathode body, forming plated film (20: 20a, 20b) on the base plate (40) and frame (30) via electroforming; and (d) separating the base plate (40) from the plated film (20) and frame (30).

Description

Method of manufacturing frame-integrated mask

The present invention relates to a method of manufacturing a frame-integrated mask. More specifically, the present invention relates to a method for manufacturing a frame-integrated mask, in which the frame and the mask are integrated to prevent deformation of the mask and to align the alignment.

Recently, studies on electroforming methods have been underway in thin plate manufacturing. The electroplating method is to immerse the positive electrode and the negative electrode in the electrolyte, and to apply the power to electrodeposit the metal thin plate on the surface of the negative electrode, it is possible to manufacture the ultra-thin plate, it is a method that can be expected to mass production.

Meanwhile, as a technology of forming pixels in an OLED manufacturing process, a fine metal mask (FMM) method of depositing an organic material at a desired position by closely attaching a thin metal mask to a substrate is mainly used.

In the conventional OLED manufacturing process, the mask is manufactured in a stick form, a plate form, and the like, and then the mask is welded and fixed to the OLED pixel deposition frame. In order to manufacture a large area OLED, several masks may be fixed to the OLED pixel deposition frame, but there is a problem in that the masks are not well aligned. In addition, since the thickness of the mask film is too thin and the large area in the process of welding fixed to the frame there is a problem that the mask is struck or warped by the load.

In the ultra-high-definition OLED manufacturing process, even microscopic alignment errors of several micrometers can lead to failure of pixel deposition, so that masks are prevented from being deformed or warped, and the alignment can be clarified. Development of fixing technology is needed.

Accordingly, an object of the present invention is to provide a method for manufacturing a frame-integrated mask in which the mask and the frame form an integrated structure, which are devised to solve the above-mentioned problems of the prior art.

In addition, the present invention is a frame-integrated mask that can be formed at a time without separately configuring the mask and the frame, omitting the process of fixing / aligning the mask to the frame, and clearly aligning the mask to improve stability of pixel deposition. It is an object of the present invention to provide a method for producing the same.

Moreover, an object of this invention is to provide the manufacturing method of the frame integrated mask which can manufacture the mask which has a pattern only by a plating process.

The above object of the present invention, a method of manufacturing a frame-integrated mask formed integrally with the mask and the frame for supporting the mask, comprising: (a) providing a mother plate formed with a patterned insulating portion on one surface; (b) connecting the frame to at least one side of the base plate; (c) using the base plate and the frame as a cathode body and forming a plating film on the base plate and the frame by electroforming; And (d) separating the mother plate from the plating film and the frame.

The mother board and the frame may be a conductive material.

The mother plate may be a single crystal silicon material.

The insulating part may be any one of a photoresist, silicon oxide, and silicon nitride material.

The insulating portion may have a tapered shape.

The frame may have a shape surrounding the border of the mother plate.

The frame may have a pair of straight shapes opposite and parallel to each other.

In step (c), the formation of the plated film on the insulating part may be prevented so that the plated film may have a pattern.

Between (c) and (d), the step of heat-treating the plated film may be further performed.

Heat treatment may be performed at 300 ℃ to 800 ℃.

The surface where the base plate and the frame contact each other may be perpendicular or acute to the bottom surface of the base plate.

In step (d), the mother plate may be separated in the lower direction of the plating film and the frame.

According to the present invention configured as described above, there is an effect that the mask and the frame form an integrated structure.

Further, according to the present invention, the process of fixing / aligning the mask to the frame is omitted, and the alignment of the mask is made clear, thereby improving the stability of pixel deposition.

In addition, according to the present invention, there is an effect that can produce a mask having a pattern only by the plating process.

1 is a schematic view showing an OLED pixel deposition apparatus using an FMM.

2 is a schematic diagram illustrating a mask.

3 is a schematic diagram illustrating a frame-integrated mask according to an embodiment of the present invention.

4 is a schematic diagram illustrating a process of manufacturing the frame-integrated mask of FIG. 3 in accordance with an embodiment of the present invention.

5 is a schematic diagram illustrating a state in which a frame and a mother plate are connected according to an embodiment of the present invention.

6 is a graph illustrating a coefficient of expansion (CTE) of a mask after heat treatment according to an embodiment of the present invention.

FIG. 7 is a schematic diagram illustrating an OLED pixel deposition apparatus to which the frame-integrated mask of FIG. 3 is applied.

8 is a schematic diagram illustrating a state in which a frame-integrated mask according to another embodiment of the present invention is applied to an OLED pixel deposition apparatus.

10, 10 ': frame-integrated mask

20: plating film

20a: mask

20b: support film

30, 35: frame

40: bed

41: description

45: insulation

46: insulation pattern

100: mask, shadow mask, fine metal mask (FMM)

200: OLED pixel deposition apparatus

DP: display pattern

PP: pixel pattern, mask pattern

DETAILED DESCRIPTION The following detailed description of the invention refers to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different but need not be mutually exclusive. For example, certain shapes, structures, and characteristics described herein may be embodied in other embodiments without departing from the spirit and scope of the invention with respect to one embodiment. In addition, it is to be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention, if properly described, is defined only by the appended claims, along with the full range of equivalents to which such claims are entitled. In the drawings, like reference numerals refer to the same or similar functions throughout the several aspects, and length, area, thickness, and the like may be exaggerated for convenience.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

1 is a schematic diagram illustrating an OLED pixel deposition apparatus 200 using an FMM 100. 2 is a schematic diagram illustrating a mask.

Referring to FIG. 1, in general, an OLED pixel deposition apparatus 200 includes a magnet plate 300 in which a magnet 310 is accommodated and a coolant line 350 is disposed, and an organic material source from the bottom of the magnet plate 300. And a deposition source supply 500 for supplying 600.

A target substrate 900 such as glass on which the organic source 600 is deposited may be interposed between the magnet plate 300 and the source deposition unit 500. The FMM 100 may be disposed on the target substrate 900 to be in close contact with or very close to the organic material 600. The magnet 310 generates a magnetic field and the FMM 100 may be in close contact with the target substrate 900 by the attraction force by the magnetic field.

Stick-type masks (see FIG. 2 (a)) and plate-type masks (see FIG. 2 (b)) are aligned before being in close contact with the target substrate 900. This is necessary. One mask or a plurality of masks may be coupled to the frame 800. The frame 800 is fixedly installed in the OLED pixel deposition apparatus 200, and the mask may be coupled to the frame 800 through a separate attachment and welding process.

The deposition source supply unit 500 may supply the organic source 600 while reciprocating the left and right paths, and the organic source 600 supplied from the deposition source supply unit 500 may pass through the pattern PP formed in the FMM mask 100. By doing so, it may be deposited on one side of the target substrate 900. The deposited organic source 600 that has passed through the pattern of the FMM mask 100 may act as the pixel 700 of the OLED.

In order to prevent uneven deposition of the pixel 700 by the shadow effect, the pattern PP of the FMM mask 100 may be formed to be inclined S (or formed into a tapered shape S). . Since the organic sources 600 passing through the pattern PP in a diagonal direction along the inclined surface may also contribute to the formation of the pixel 700, the pixel 700 may be uniformly deposited in overall thickness.

The mask 100a illustrated in FIG. 2A is a stick type mask, and both sides of the stick may be welded and fixed to the OLED pixel deposition frame 800. The mask 100b illustrated in FIG. 2B is a plate-type mask, and may be used in a large area pixel forming process, and the edge of the plate may be welded and fixed to the OLED pixel deposition frame 800. FIG. 2C is an enlarged side sectional view taken along line A-A 'of FIGS. 2A and 2B.

A plurality of display patterns DP may be formed in the bodies of the

masks

100a and 100b. The display pattern DP is a pattern corresponding to one display such as a smartphone. When the display pattern DP is enlarged, the plurality of pixel patterns PP corresponding to R, G, and B may be confirmed. The pixel patterns PP may have an inclined shape and a taper shape (see FIG. 2C). A large number of pixel patterns PP are clustered to form one display pattern DP, and a plurality of display patterns DP may be formed on the masks 100: 100a and 100b.

That is, in the present specification, the display pattern DP is not a concept representing one pattern, and should be understood as a concept in which a plurality of pixel patterns PP corresponding to one display are clustered. Hereinafter, the pixel pattern PP is mixed with the mask pattern PP.

1 and 2, in the process of welding and fixing a plurality of masks to the frame 800, the alignment error between the masks may occur, and if a certain mask is deformed or distorted, the mask 100 may be deformed. This may cause misalignment of the entire masks. In addition, in the case of fixing one large area mask to the frame 800, the edge may not be supported correctly, which may cause the mask to be struck or warped by a load.

Therefore, according to the present invention, since the mask is formed and integrally formed on the frame, the process of directly welding and fixing the mask to the frame 800 can be omitted, and the deformation of the mask can be prevented to clarify the alignment. It is done.

3 is a schematic diagram illustrating a frame-integrated mask 10 according to an embodiment of the present invention. FIG. 3A is a perspective view of the frame-integrated mask 10, and FIG. 3B is an enlarged side cross-sectional view of BB ′ of FIG. 3A.

Referring to FIG. 3, the frame-integrated mask 10 includes a mask 20a and a frame 30, and the supporting film 20b attached to a part of the surface of the frame 30 is made of the same material as the mask 20a. And may be integrally connected with the mask 20a. Although the mask 20a and the support film 20b are described with different names and symbols according to the formed positions, the parts of the plating films 20: 20a and 20b which are electrodeposited and plated in the actual electroforming process are electroplated. It is the structure formed at the same time in a process. In the following description, the mask 20a and the support film 20b may be used in combination with the plating films 20: 20a and 20b.

The mask pattern PP may be formed on the mask 10. It is preferable that the mask pattern PP has a substantially tapered shape having a shape that becomes wider or narrower from the top to the bottom, and the upper surface of the mask 10 is the target substrate 900 (see FIG. 5). It is more preferable that the mask pattern PP has a shape in which the width is gradually widened from the top to the bottom.

The pattern width may be formed in a size of several to several tens of micrometers, preferably in a size smaller than 30 micrometers. The mask pattern PP may be formed as the generation of the plating film 20 is prevented by the insulating portion 25. A detailed forming process will be described later with reference to FIG. 4. The mask pattern PP has the same structure as the pixel pattern PP / display pattern DP described above with reference to FIG. 2.

The frame 30 may be bonded to at least a portion (eg, an upper surface) of the plating film 20. In more detail, the plating layer 20 may be bonded to the support layer 20b which is a region other than the region of the mask 20a which is a region where the mask pattern PP is formed.

The frame 30 preferably has a shape that surrounds the edge of the mask 20a so that the mask 20a can be tightly supported without being knocked or twisted. 3, the rectangular frame 30 is shown, but a closed, circular, polygonal, or the like form is also possible. In addition to this, a pair of straight frames 30 which are opposed to each other in parallel and in contact with both sides of the mask 20a are also possible.

On the other hand, the frame 30 may not be extended in the direction perpendicular to the forming surface of the mask 20a, but may be inclined to extend. The frame 30 may be extended while being inclined outward from the top to the bottom of the frame 30. That is, the frame 30 may have a shape that is wider from the top to the bottom. If the frame 30 has such a shape, there is an advantage that the mother plate 40 (see FIG. 4) can be easily separated in the downward direction after the process of forming the plating film 20. In addition, when the plurality of mother plate 40 is coupled to the frame 30, there is an advantage that can be easily separated from the frame 30 to replace, repair only the defective mother plate 40. In addition, when the plating film 20 is electrodeposited to not only the upper surface of the frame 30 but also to the inclined side surface, the area of the plating film 20 (or the supporting film 20b) bonded to the frame 30 is reduced. It becomes wider and there is an advantage that the mask 20a film can be supported more efficiently by reducing the stress acting on the interface which is integrally connected with the support film 20b and the mask 20a.

As described above, in the frame-integrated mask 10 of the present invention, since the mask 20a is integrally connected with the supporting film 20b of the frame 30, only the frame 30 is moved to the OLED pixel deposition apparatus 200. Alignment of the mask 20a may be completed only by the installation process.

4 is a schematic diagram illustrating a process of manufacturing the frame-integrated mask 100 of FIG. 3 according to an embodiment of the present invention. 5 is a schematic view showing a state in which the frame 30 and the mother plate 40 are connected according to an embodiment of the present invention.

Referring to FIGS. 4A and 5, a mother plate 40 may be provided. The base plate 40 may use one large area plate plate, or may be arranged by attaching

several base plates

40a, 40b, .... When using multiple beds, defective ones can be replaced, repaired and placed in advance.

In order to perform electroforming, the base 41 of the base plate 40 may be a conductive material. The base plate 40 may be used as a cathode electrode in electroplating.

As the conductive material, in the case of metal, metal oxides may be generated on the surface, impurities may be introduced during the metal manufacturing process, and in the case of the polycrystalline silicon substrate, inclusions or grain boundaries may exist, and the conductive polymer may be present. In the case of a base material, it is highly likely to contain an impurity, and strength. Acid resistance may be weak. Elements that interfere with the uniform formation of an electric field on the surface of the base plate 40 (or substrate 41), such as metal oxides, impurities, inclusions, grain boundaries, etc., are referred to as "defects. Due to a defect, a uniform electric field may not be applied to the cathode body of the material described above, and a part of the plating film 20 may be formed unevenly.

In the implementation of UHD-class or higher resolution pixels, non-uniformity of the plating film 20 and the plating film pattern PP may adversely affect the formation of the pixel. Since the pattern width of the FMM and the shadow mask can be formed in the size of several to several tens of micrometers, preferably smaller than 30 micrometers, even a defect of several micrometers is large enough to occupy a large proportion in the pattern size of the mask.

In addition, an additional process for removing metal oxides, impurities, and the like may be performed to remove the defects in the cathode material of the material described above, and another defect such as etching of the anode material may be caused in this process. have.

Therefore, the present invention can use the base material 41 of a single crystal silicon material. In order to have conductivity, the substrate 41 may be subjected to high concentration doping of 10 ¹⁹ or more. Doping may be performed on the entirety of the substrate 41, or may be performed only on the surface portion of the substrate 41.

Since the doped single crystal silicon is free from defects, there is an advantage in that a uniform plating film 20 (or mask 20a) can be generated due to the formation of a uniform electric field on the entire surface during electroplating. The FMM 100 manufactured through the uniform plating film 20 may further improve the image quality level of the OLED pixel. In addition, since an additional process of eliminating and eliminating defects does not have to be performed, process costs are reduced and productivity is improved.

In addition, as the silicon substrate 41 is used, there is an advantage in that the insulating portion 45 may be formed only by a process of oxidizing and nitriding the surface of the substrate 41 as needed. The insulating part 45 may serve to prevent electrodeposition of the plating film 20 to form a pattern PP of the plating film 20.

Side 42 of the base 41 may have a shape corresponding to the inner side of the frame 30 to facilitate connection with the frame 30. In FIG. 4A, a substrate 41 having an inclined side surface 42 is shown.

A patterned 46 insulating portion 45 may be formed on one surface of the substrate 41. The insulating part 45 is formed to protrude (embossed) on one surface of the base 41 and may have an insulating property to prevent generation of the plating film 20. Accordingly, the insulating part 45 may be formed of any one material of photoresist, silicon oxide, and silicon nitride. The insulating part 45 may form silicon oxide and silicon nitride on the substrate 41 by a deposition method or the like, and based on the substrate 41, thermal oxidation and thermal nitriding methods may be used. Can also be used. The photoresist may be formed using a printing method or the like. The insulating part 45 may have a thickness of about 5 μm to 20 μm to be thicker than the plating film 20 to be described later.

It is preferable that the insulation part 45 has a taper shape. When forming a tapered pattern using the photoresist, a multiple exposure method, a method of varying the exposure intensity for each region, and the like can be used.

In the electroplating process to be described later, the plating film 20 is formed from the exposed surface of the substrate 41, and in the region where the insulating part 45 is to be disposed, generation of the plating film 20 is prevented to form the pattern PP. Can be. Since the mother plate 40 may be formed up to a pattern in the process of generating the plating film 20, the mother plate 40 may be used in parallel with the mold and the cathode body.

Next, referring to FIGS. 4B and 5, the frame 30 may be connected to at least one side of the mother plate 40. Here, the connection refers to a concept including a series of actions that are bonded between the frame 30 and the mother plate 40 through an adhesive, coupled through fastening means such as bolts, or arranged to be in close contact with each other.

The frame 30 is also made of SUS, Ti, or the like having conductivity so that the plating film 20 (or the support film 20b) can be formed on the surface during the electroplating process, and the rigidity as the frame 30 can be secured at the same time. It is preferable to employ a metal material. In addition, in order to prevent deformation of the frame 30 due to heat in the OLED pixel deposition process, it is preferable to employ a material having a low thermal strain.

The frame 30 may be arranged to surround at least a part of the border in which one or several mother boards are aligned. In FIG. 4B, although the rectangular frame 30 is disposed to surround the edge of the base plate 40, a pair of straight frames facing each other in parallel with each other and in contact with both sides of the base plate 40 are illustrated. (30) can also be used.

The frame 30 may have a vertical shape with a constant width, and may have a shape in which the width is widened from the top to the bottom. Taking the rectangular frame 30 as an example, the mother plate 40 is connected in a shape that fits snugly to the inner circumferential surface of the frame 30. To this end, the side surface 42 of the base plate 40 may also be formed to have a angle or vertical or inclined. In other words, the angle (a) formed between the surface 42 and the lower surface of the mother plate 40 which the base plate 40 and the frame 30 contact each other may form a right angle or an acute angle. Thus, the base plate 40 can be easily separated in the downward direction, there is an advantage that can be separated, replace the specific base plate 40 of the plurality of base plate (40).

Next, referring to FIG. 4C, the plating films 20: 20a and 20b may be formed on the mother plate 40 and the frame 30. A combination of the mother plate 40 and the frame 30 is used as the cathode body, and an anode body (not shown) facing the substrate is prepared. The anode body (not shown) may be immersed in the plating liquid (not shown), and all or part of the mother plate 40 and the frame 30 may be immersed in the plating liquid (not shown).

The plating liquid may be a material of the plating film 20 that will constitute the mask 20a and the supporting film 20b as an electrolyte solution. As an example, when an Invar thin plate made of iron nickel alloy is manufactured as the plating film 20, a mixed solution of a solution containing Ni ions and a solution containing Fe ions may be used as the plating solution. In another embodiment, when manufacturing a super invar thin plate made of iron nickel cobalt alloy as the plating film 20, a mixed solution of a solution containing Ni ions, a solution containing Fe ions, and a solution containing Co ions is used. It can also be used as a plating solution. Inva thin plate, super inva thin plate can be used as a fine metal mask (FMM), a shadow mask (Shadow Mask) in the manufacture of OLED. And the Invar sheet has a coefficient of thermal expansion of about 1.0 X 10^-6/ ℃, Super Invar thin plate has a coefficient of thermal expansion of about 1.0 X 10^-7/ ℃Since it is so low, there is little possibility that the pattern shape of a mask is deformed by thermal energy, and it is mainly used in high-resolution OLED manufacturing. In addition to this, the plating solution for the target plating film 20 can be used without limitation, and in the present specification, the manufacturing of the Invar thin plate 20 will be described as a main example.

Due to the electric field formed between the

cathode bodies

30 and 40 and the opposite anode bodies, the plating film 20 may be electrodeposited on the surfaces of the mother plate 40 and the frame 30. The plating film 20 electrodeposited from the exposed surface of the remaining substrate 40 (or the substrate 41) except for the region covered by the insulating portion 45 becomes the mask 20a, and the exposure of the frame 30 is performed. The plating film 20 electrodeposited from the surface may be the support film 20b.

Since the insulator 45 has an insulating property, an electric field is not formed between the insulator 45 and the positive electrode, or only a weak electric field of a degree to which plating is difficult to be formed is formed. Therefore, the part corresponding to the insulating part 45 in which the plating film 20 is not produced | generated in the mother board 40 comprises the pattern, hole, etc. of the plating film 20. FIG. In other words, each of the patterned 46 insulating portions 45 may form a mask pattern PP corresponding to R, G, and B of the mask 20a. The shape of the side cross-section of the mask pattern PP may be formed to be inclined in a substantially tapered shape, and the inclined angle may be about 45 ° to 65 °.

Next, referring to FIG. 4D, the mother plate 40 may be separated from the frame 30 covered with the mask 20a and the support film 20b. When the frame 30 and the mother plate 40 are connected through an adhesive, a process of dissolving and removing the adhesive may be further performed. If the frame 30 and the mother plate 40 are connected through an adhesive, the process of disassembling the fastening means may be further performed. Since the mask 20a is formed on the upper portion of the mother plate 40, the mother plate 40 can be separated from the frame 30 by moving downward.

Meanwhile, before the mother plate 40 is separated from the frame 30 covered with the mask 20a and the supporting film 20b, heat treatment may be performed. Heat treatment may be carried out at a temperature of 300 ℃ to 800 ℃ (see Figure 6).

In general, the Invar thin plate produced by electroplating has a higher coefficient of thermal expansion as compared to the Invar thin plate produced by rolling. Thus, the thermal expansion coefficient can be lowered by performing a heat treatment on the Invar thin plate, which may cause slight deformation in the Invar thin plate. If the mask 20a, the support layer 20b, and the mother plate 40 are separated and then heat-treated to the mask 20a having the mask pattern PP, some deformation may occur in the mask pattern PP. . Therefore, when the heat treatment is performed while the mother plate 40 and the mask 20a are bonded, the shape of the mask pattern PP formed in the space portion occupied by the insulating portion 45 of the mother plate 40 is kept constant. There is an advantage that can prevent the minute deformation due to the heat treatment.

6 is a graph illustrating a coefficient of expansion (CTE) of a mask after heat treatment according to an embodiment of the present invention. For the samples of 80 × 200 mm, the coefficient of thermal expansion of the Invar thin plate was heat-treated in seven temperature ranges of 300 ° C., 350 ° C., 400 ° C., 450 ° C., 500 ° C., 550 ° C. and 800 ° C. Figure 6 (a) shows the result of measuring the thermal expansion coefficient of each sample while raising the temperature from room temperature (25 ℃) to about 240 ℃, Figure 6 (b) is from about 240 ℃ to room temperature (25 ℃) The result of measuring the coefficient of thermal expansion of each sample is shown while decreasing temperature. 6 (a) and 6 (b), it can be seen that the coefficient of thermal expansion changes according to the heat treatment temperature, in particular, the lowest coefficient of thermal expansion appears in the heat treatment at 800 ℃.

Next, referring to FIG. 4E, after the mother plate 40 is separated, the frame-integrated mask 10 in which the mask 20a and the frame 30 supporting the mask 20a are integrally completed is completed. do.

FIG. 7 is a schematic diagram illustrating an OLED pixel deposition apparatus 200 to which the frame-integrated mask 10 of FIG. 3 is applied.

Referring to FIG. 7, the frame integrated mask 10 may be in close contact with the target substrate 900. Means for fixing the frame 30 such as the robot arm may be disposed inside the OLED pixel deposition apparatus 200 to support and fix the frame 30. The alignment of the mask 10 may be completed only by disposing only the frame 30 in the OLED pixel deposition apparatus 200. Since the mask 20a is integrally connected to the support film 20b and is tightly supported by the edge thereof, and the support film 20b is coupled to the frame 30, the mask 20a is struck or warped under load. The deformation of can be prevented. As a result, the alignment of the mask 10 required for pixel deposition can be made clear.

8 is a schematic diagram illustrating a state in which the frame-integrated mask 10 ′ according to another embodiment of the present invention is applied to an OLED pixel deposition apparatus.

Referring to FIG. 8A, the frame-integrated mask 10 ′ includes a mask 20a and a frame 30, and the supporting film 20b attached to a portion of the surface of the frame 30 is a mask 20a. It may have the same material as) and may be integrally connected with the mask 20a. This point is the same as the frame-integrated mask 10 of FIG. The difference is that the frame 35 of the frame-integrated mask 10 'is not disposed directly inside the OLED pixel deposition apparatus 200 like the frame 30 [see FIGS. 3 and 7], and another frame 38. It is a configuration fitted to. Since the frame 35 is integrally connected with the mask 20, the frame 35 may also be referred to as a "stick frame". The frame 38 may also be referred to as a "mask frame" because at least one frame-integrated mask 10 '(stick frame) is fitted. The mask frame 38 has a depression 39, and a portion of the stick frame 35 of the frame-integrated mask 10 ′ may be fitted into the depression 39.

To this end, the frame 35 may be of a smaller size than the frame 30. For example, a plurality of frame-integrated masks 10 'having a small area mask 20a can be used in a stick size (see Fig. 2A). The frame-integrated mask 10 'is advantageously manufactured with less area than the frame-integrated mask 10 in FIG. In particular, the depression 39 of the mask frame 38, which is disposed inside the OLED pixel deposition apparatus 200 in advance, serves as a guide rail, so that the unitary mask 10 ′ in the form of each unit is manufactured. The alignment of the mask can be completed only by inserting the [stick frame 35] into the depression 39.

Referring to FIG. 8B, the frame 35 may further include a protrusion 37 that may be fitted to the recess 39.

Means for fixing and fixing the mask frame 38, such as a robot arm, are disposed inside the OLED pixel deposition apparatus 200 to support and fix the mask frame 38, and to manufacture the frame-integrated mask 10 'manufactured by the OLED pixel. It may be fitted to the depression 39 of the mask frame 38 fixedly installed in the deposition apparatus 200. The depression 39 may be formed in a shape corresponding to the stick frame 35 or the protrusion 37 formed on the plurality of frame-integrated masks 10 ′. The rectangular stick frame 35 may be firmly fixed without being flown when fitted to the depression 39. The straight stick frame 35 may be fitted to the depression 39 in a sliding form, or may be arranged by sliding the plurality of frame-integrated masks 10 'in a sliding form.

As described above, the frame-integrated

mask

10, 10 ′ of the present invention forms the mask 20a and is integrally formed with the

frames

30, 35, thereby preventing deformation of the mask 20a and providing alignment. There is an effect that can be clarified. Further, in the frame integrated masks 10 and 10 'of the present invention, since the mask 20a is integrally connected with the supporting film 20b of the frame 30, only the

frames

30 and 35 are OLED pixel deposition apparatus 200. There is an effect that the alignment of the mask (20a) can be completed only by the process of moving to and installing). In addition, since the insulating portion 45 is formed on the mother plate 40 to prevent the formation of the plating film 20, the mask 20a having the pattern PP is formed only by forming the plating film 20 in the electroplating process. ) Can be produced.

Although the present invention has been shown and described with reference to preferred embodiments as described above, it is not limited to the above embodiments and various modifications made by those skilled in the art without departing from the spirit of the present invention. Modifications and variations are possible. Such modifications and variations are intended to fall within the scope of the invention and the appended claims.

Claims

A method of manufacturing a frame-integrated mask in which a mask and a frame supporting the mask are integrally formed,

(a) providing a mother plate having a patterned insulation formed on one surface;

(b) connecting the frame to at least one side of the base plate;

(c) using the base plate and the frame as a cathode body and forming a plating film on the base plate and the frame by electroforming; And

(d) separating the base plate from the plating film and the frame;

Including, a frame-integrated mask manufacturing method.
The method of claim 1,

The mother plate and the frame are conductive materials, the manufacturing method of the frame-integrated mask.
The method of claim 1,

The mother plate is a single crystal silicon material, the manufacturing method of the frame-integrated mask.
The method of claim 1,

The insulating portion is any one of a photoresist, silicon oxide, and silicon nitride material, the manufacturing method of the frame-integrated mask.
The method of claim 1,

The insulation part has a tapered shape, The manufacturing method of the frame integrated mask.
The method of claim 1,

The frame has a shape surrounding the edge of the mother board, the manufacturing method of the frame-integrated mask.
The method of claim 1,

The frame has a pair of straight lines facing each other and parallel to each other, the manufacturing method of the frame-integrated mask.
The method of claim 1,

in step (c),

The formation method of the frame integrated mask in which formation of a plating film on an insulation part is prevented and a plating film has a pattern.
The method of claim 1,

The method of manufacturing a frame-integrated mask further comprising the step of heat-treating the plated film between steps (c) and (d).
The method of claim 9,

The heat treatment is carried out at 300 ℃ to 800 ℃, manufacturing method of a frame-integrated mask.
The method of claim 1,

The surface where the mother plate and the frame abuts is perpendicular or acute to the lower surface of the mother plate, the manufacturing method of the frame-integrated mask.
The method of claim 11,

in step (d),

The mother plate is separated in the downward direction of the plated film and the frame, the manufacturing method of the frame-integrated mask.