CN109321879B

CN109321879B - Vapor deposition mask

Info

Publication number: CN109321879B
Application number: CN201810834458.5A
Authority: CN
Inventors: 石川树一郎; 田丸裕仁; 小林良弘
Original assignee: Maxell Ltd
Current assignee: Maxell Ltd
Priority date: 2017-07-31
Filing date: 2018-07-26
Publication date: 2022-06-10
Anticipated expiration: 2038-07-26
Also published as: JP2022103212A; JP7470734B2; KR20190013534A; JP2023126306A; CN109321879A

Abstract

The invention provides a vapor deposition mask, which optimizes the strength setting of a frame body based on the cross section shape, properly restrains the deformation of a mask main body by using the frame body, prevents the mask main body from deviating from the correct position, and improves the accuracy of vapor deposition. Since the minimum width portion of the inner frame portion of the frame body (3) is formed in a cross-sectional shape having an appropriate relationship between the width and the thickness, and bending rigidity of the minimum width portion is reliably provided, necessary and sufficient strength is provided against a force from the mask main body (2), and displacement of each portion of the mask main body (2) from a position where the frame body should exist is suppressed as the whole of the frame body (3) together with other portions of the frame body (3) having a width wider than the minimum width portion and a higher strength, so that the state of alignment between the mask and the vapor deposition substrate in the vapor deposition step can be secured, and vapor deposition can be performed accurately at an appropriate position of the vapor deposition substrate.

Description

Vapor deposition mask

Technical Field

The present invention relates to a vapor deposition mask used for forming a light-emitting layer of an organic EL element by, for example, a vapor deposition mask method.

Background

As a method for forming a light-emitting layer of an organic el (electroluminescence) element, a vapor deposition mask method is often used. In this vapor deposition mask method, in order to form an organic light-emitting substance by vapor deposition at a desired position on a substrate made of a transparent material such as glass, a vapor deposition mask is used in which a portion corresponding to a vapor deposition portion of the substrate is removed by punching.

In a vapor deposition device for performing vapor deposition, a vapor deposition mask is set in a state of being accurately aligned with respect to a substrate to be vapor deposited, and vapor deposition is performed. However, since heating is generally performed in order to make the inside of the vapor deposition device an environment in which vapor deposition is possible during vapor deposition, the following problems arise when the vapor deposition mask and the glass substrate are different in thermal deformation state: the relative positional relationship between the vapor deposition mask and the substrate varies, and the accuracy required for the formed light-emitting layer cannot be satisfied.

In recent years, a vapor deposition mask has been proposed in which a mask structure is adopted in which a reinforcing frame made of a material having a thermal expansion coefficient equal to that of a substrate to be vapor deposited such as glass or a material having a low thermal expansion coefficient is attached to an outer peripheral edge of a thin mask body, so that even if a mask body made of a material having a thermal expansion coefficient different from that of the substrate to be vapor deposited is used, the mask body is in a state in which the mask body changes in shape following expansion of the frame having a thermal expansion coefficient equal to that of the substrate to be vapor deposited, or is inhibited from changing in shape by the frame having a low thermal expansion coefficient, whereby the accuracy of integrating the mask body with respect to the substrate to be vapor deposited at the time of temperature rise in a vapor deposition apparatus can be ensured, and a light emitting layer can be formed on the substrate to be vapor deposited with high accuracy.

An example of such a conventional vapor deposition mask is disclosed in japanese patent laid-open publication No. 2005-15908.

Documents of the prior art

Patent literature

Patent document 1: japanese laid-open patent publication No. 2005-15908

Disclosure of Invention

Problems to be solved by the invention

A conventional vapor deposition mask has a structure as shown in patent document 1, and can suppress relative deformation between the mask and the substrate due to a difference in thermal expansion coefficient and prevent a significant deterioration in the positional accuracy of a vapor deposition formed product.

However, there is a demand for further high precision of vapor deposition products in the market, and further suppression of the occurrence of misalignment due to displacement of the mask is required.

In the conventional combined structure of the mask body and the frame body, it is easy to consider thickening the frame body in order to secure the frame body strength against displacement of the mask body, but if the frame body in the vicinity of the mask body is too thick, adverse effects such as the progress of a vapor deposition material such as an organic light-emitting substance into a through hole of the mask body being locally hindered by the frame body occur at the time of vapor deposition, and therefore, the thickness cannot be simply increased. Further, when the frame body is thickened to some extent, the weight of the frame body also increases, and a problem of deformation such as deflection due to the weight of the frame body itself occurs, and in this case, the mask body is adversely affected, and the positional accuracy is deteriorated. Therefore, in the method of increasing the thickness of the frame body to improve the strength and improve the accuracy of the mask, there is a limit value of the thickness that can be applied, and it is not realistic to improve the strength so as to exceed the limit value.

In addition, when the frame body is formed of a generally-distributed and readily-available metal plate material, such a plate material is manufactured by processing such as rolling, and therefore, a large amount of strain generated by the processing remains inside the plate material. The influence of the internal strain of the plate material generated in the manufacturing process is more and more conspicuously exhibited as the thickness of the plate increases. Therefore, when the thickness of the frame body is increased, that is, when the thickness of the plate material used for the frame body is increased, strain appears as slight warpage of the frame body at the stage of finally obtaining the frame body from the plate material by further processing such as cutting, and the shape which the frame body originally should have cannot be strictly realized, which adversely affects the accuracy of the mask. In this respect, it is also difficult to increase the strength by simply thickening the frame.

Further, it is also possible to use a strain-free plate material produced by special processing or a plate material subjected to internal stress removal processing in advance as a metal plate material for the frame body, and to prevent the frame body from being affected by strain.

As described above, the conventional mask structure has the following problems: in terms of the frame strength, it is difficult to set the displacement of the mask body within a strict tolerance range with high precision, and deterioration in yield due to misalignment of the vapor deposition product cannot be avoided.

The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a vapor deposition mask in which strength setting of a frame body based on a cross-sectional shape is optimized, deformation of a mask body is appropriately suppressed by the frame body, displacement of the mask body from a correct position is prevented, and accuracy of vapor deposition is improved.

Means for solving the problems

The disclosed vapor deposition mask is provided with: a plurality of mask bodies in which a plurality of independent evaporation through holes are arranged in a predetermined pattern; and a frame body disposed around the mask body, wherein the frame body has a rectangular or square outer frame portion located at an outermost periphery and an inner frame portion dividing an inner side of the outer frame portion into a plurality of opening regions, and is formed in a lattice shape as a whole, the mask body is located in each of the plurality of opening regions of the frame body and is integrated with the frame body, and a cross-sectional shape of a portion of the inner frame portion of the frame body having a narrowest width is a rectangular cross-section having a ratio of a thickness dimension to a width dimension of 0.8/5 or more and 2/5 or less.

Therefore, according to the disclosure of the present invention, by forming the cross-sectional shape of the minimum width portion of the inner frame portion of the frame body so that the relationship between the width and the thickness is in an appropriate relationship, the bending rigidity (difficulty of bending deformation) of the minimum width portion is accurately given, and a necessary and sufficient strength is given to the force from the mask main body side, and the deviation of each portion of the mask main body from the position where it should exist is suppressed as the whole of the frame body together with other portions of the frame body having a width wider than the minimum width portion and a high strength, so that the state of alignment between the mask and the vapor deposition substrate in the vapor deposition step can be secured, and vapor deposition can be performed at an appropriate position of the vapor deposition substrate with high accuracy.

Further, the difficulty of the bending deformation of the minimum width portion can suppress the deflection of the minimum width portion due to its own weight, and suppress the deformation of the frame body and the influence thereof on the mask main body.

In the vapor deposition mask of the present invention, the cross-sectional shape of each of the portions of the frame body other than the portion having the narrowest width in the outer frame portion and the inner frame portion is a rectangular cross-section having a thickness dimension to width dimension ratio of 0.8/90 or more and smaller than the thickness dimension to width dimension ratio of the portion having the narrowest width in the inner frame portion, as required.

Therefore, according to the disclosure of the present invention, each portion of the frame other than the minimum width portion is also formed into an appropriate cross-sectional shape, and a thickness dimension of a certain degree or more is set for the width dimension in each portion of the frame, and a necessary minimum bending rigidity that is difficult to bend is provided, whereby the strength of the frame against the force from the mask main body side can be sufficiently ensured, the deformation of the frame and the influence on the mask main body due to the deformation are suppressed, the accuracy of the through hole position of the mask main body is improved, and high-accuracy vapor deposition with respect to the vapor deposition target can be performed.

In the vapor deposition mask disclosed in the present invention, the frame body is formed so that the thickness dimension of each portion is 0.8mm to 2mm, as necessary.

Therefore, according to the disclosure of the present invention, by setting the thickness dimension in the cross-sectional shape so as not to be excessively large within the range of the actual width dimension that can obtain the cross-sectional shape in which the frame portions are difficult to bend, it is possible to suppress the occurrence of deformation, which is deflection or internal strain due to the own weight, in each frame portion, and to form a frame with high accuracy, and also to perform vapor deposition with high accuracy. Further, the thickness is not increased more than necessary, and thus, the weight of the frame body is suppressed from increasing, and the operability of the vapor deposition mask is prevented from deteriorating.

In the vapor deposition mask disclosed in the present invention, the frame body has a laminated structure in which a first frame member and a second frame member are integrated by being stacked on each other, and the first frame member and the second frame member are frame members formed of a thin metal plate material and having a warp, and the warp directions thereof are reversed, as necessary.

Therefore, according to the present invention, the frame body is formed into a laminated structure in which the first frame member and the second frame member made of a thin metal plate material are integrally laminated and joined to each other, and the first frame member and the second frame member having warpage are laminated and arranged so that the warpage directions of the first frame member and the second frame member are opposite to each other, whereby a flat state is obtained by canceling warpage in the frame body, a frame body having improved flatness is obtained at a lower cost, the shape accuracy of a mask can be improved, and vapor deposition can be efficiently performed. Further, by configuring the frame body to be a combination of the first frame member and the second frame member, even when the thickness of the frame body reaches a thickness at which warping is likely to occur when a single sheet of thin plate material is used, unnecessary deformation such as warping does not occur, and the mask structure having improved strength can be obtained without adversely affecting the positional accuracy of the mask main body, and vapor deposition can be performed with high accuracy using the mask.

In the vapor deposition mask disclosed in the present invention, the frame body is formed of a different material for the inner frame portion and a different material for the outer frame portion, as necessary.

Therefore, according to the present disclosure, by making the material of the inner frame portion and the material of the outer frame portion of the frame different from each other and by giving different properties to the inner frame portion and the outer frame portion, for example, when a material having a higher specific strength than the inner frame portion is used for the outer frame portion, deformation by a force from the mask main body side is mainly suppressed by the outer frame portion, and the mask main body can be efficiently reinforced, and the accuracy of the position of the mask main body can be improved. In addition, for example, when a material having a smaller linear expansion coefficient than that of the outer frame portion is used for the inner frame portion of the frame body, displacement of each position of the mask due to thermal deformation of the mask main body can be effectively suppressed by the inner frame portion adjacent to the mask main body in a temperature-raised state in the vapor deposition step or the like, and the positional relationship between the mask and the vapor deposition substrate in a normal temperature state can be reliably maintained even in the temperature-raised state, so that vapor deposition can be performed with high accuracy.

Drawings

Fig. 1 is a schematic plan view of a vapor deposition mask according to an embodiment of the present invention.

Fig. 2 is a diagram illustrating a configuration of a main part of a vapor deposition mask according to an embodiment of the present invention.

Fig. 3 is a schematic sectional view of a main part of a vapor deposition mask according to an embodiment of the present invention.

Fig. 4 is a plan view of a frame of a vapor deposition mask according to an embodiment of the present invention.

Fig. 5 is an explanatory view of a process for forming a frame body of a vapor deposition mask according to an embodiment of the present invention.

Fig. 6 is an explanatory diagram of a primary pattern resist forming process in manufacturing a vapor deposition mask according to an embodiment of the present invention.

Fig. 7 is an explanatory view of a primary electrodeposition layer formation step in the production of a vapor deposition mask according to an embodiment of the present invention.

Fig. 8 is a first half explanatory view of a secondary pattern resist forming process in manufacturing a vapor deposition mask according to an embodiment of the present invention.

Fig. 9 is a diagram illustrating a second half of a process of forming a secondary pattern resist in manufacturing a vapor deposition mask according to an embodiment of the present invention.

Fig. 10 is an explanatory diagram of a pressure bonding step of the frame body in manufacturing the vapor deposition mask according to the embodiment of the present invention.

Fig. 11 is an explanatory diagram of a metal layer forming step and a state where the vapor deposition mask and the die are separated from each other in the production of the vapor deposition mask according to the embodiment of the present invention.

Fig. 12 is a schematic plan view of another example of a vapor deposition mask according to an embodiment of the present invention.

Fig. 13 is a plan view and a schematic cross-sectional view of another frame of a vapor deposition mask according to an embodiment of the present invention.

In the figure:

1-vapor deposition mask, 2-mask body, 2 a-pattern forming region, 2 b-outer peripheral edge, 3-frame, 3 a-first frame member, 3 b-second frame member, 3 c-adhesive layer, 4-outer frame member, 5-inner frame member, 6-opening region, 7-metal layer, 8-vapor deposition through hole, 9-vapor deposition pattern, 10-die, 11-resist layer, 12-mask film, 12 a-light transmitting hole, 14-primary pattern resist, 15 a-primary electrodeposition layer, 16-resist layer, 16a, 16 b-resist layer, 17-mask film, 17 a-light transmitting hole, 18-secondary pattern resist, 19-adhesive layer.

Detailed Description

A vapor deposition mask according to an embodiment of the present invention will be described below with reference to fig. 1 to 11. In this embodiment, an example of application to a vapor deposition mask for an organic EL element will be described.

In the above-described drawings, the vapor deposition mask 1 of the present embodiment is configured to include a plurality of mask bodies 2 in which a plurality of vapor deposition through holes 8 are provided in a predetermined pattern, and a frame body 3 disposed around the mask bodies 2.

The mask body 2 has the following structure: nickel alloy such as nickel and nickel cobalt, or other electrodeposited metal is used as a raw material, and is formed into a sheet by electroforming, and a plurality of independent evaporation through holes 8 through which an evaporation material passes are provided in a predetermined pattern.

The mask body 2 includes a pattern forming region 2a in which a plurality of vapor deposition through holes 8 are provided, and an outer peripheral edge 2b integrally joined to the frame body 3 via a metal layer 7 formed by plating. In the pattern forming region 2a, the plurality of vapor deposition through holes 8 are formed as a light-emitting layer forming pattern 9 in a matrix form in which a plurality of through hole groups arranged linearly in the front-rear direction are arranged in rows and a plurality of rows are arranged in parallel in the left-right direction.

The thickness of the mask body 2 is preferably set to a range of 5 to 20 μm, and in the present embodiment, set to 8 μm.

The frame body 3 is formed in a rectangular frame shape by forming a plate-like body having a wall thicker than the mask body 2, and is configured to surround the outside of the mask body 2 and to be connected to and integrated with the mask body 2 for reinforcing the mask body 2. More specifically, the frame 3 has a rectangular outer frame 4 positioned at the outermost periphery and an inner frame 5 dividing the inside of the outer frame 4 into a plurality of opening regions 6, and is formed in a lattice shape as a whole. The mask body 2 is located in each of the opening regions 6 defined by the inner frame portion 5 of the frame 3, and is integrated with the frame 3 via the metal layer 7.

The frame body 3 is configured such that the cross-sectional shape of the portion of the inner frame portion 5 that has the narrowest width is a rectangular cross-section having a ratio (aspect ratio) of the thickness dimension T to the width dimension W of 0.8/4 or more and 2/4 or less.

On the other hand, the cross-sectional shapes of the frame 3 other than the portions having the narrowest width in the outer frame portion 4 and the inner frame portion 5 are rectangular cross-sections having a ratio of the thickness dimension T to the width dimension W (aspect ratio) of 0.8/90 or more.

The outer frame portion 4 and the inner frame portion 5 of the frame body 3 are formed to have the same thickness, and the thickness dimension thereof is formed to be 0.2mm or more and 6mm or less, preferably 0.8mm or more and 3mm or less, and more preferably 2 mm. Here, the reason why the thickness dimension is preferably 0.8mm or more is that, when the thickness dimension of each part of the frame body is less than 0.8mm, there is a problem that the strength of the frame body cannot be deformed against the tension (tensile stress) inherent in the mask body.

On the other hand, if the thickness of each part of the frame body formed in this way exceeds 2mm, there is a possibility that a problem of so-called shadow (the frame body becomes an obstacle to the travel of the vapor deposition material) may occur at the time of vapor deposition, and since the thickness of the die with respect to the frame body is usually 1mm, it is difficult to perform the operation after the pressure bonding of the frame body, and the like, it is preferable to set the thickness to 2mm or less.

In the present embodiment, the width dimension W of the portion (minimum width portion) of the inner frame portion 5 that has the narrowest width ₁The width dimension W of the portion (maximum width portion) having the widest width of 4mm is set₂Set to about 90 mm. When the width of the minimum width portion is less than 4mm, the strength of the frame body is not deformed against the tension (tensile stress) in the mask main body, and therefore, the width is preferably 4mm or more.

In addition, when the width dimension of the maximum width portion exceeds 90mm, the number of mask bodies (acquisition number) that can be formed on one die is excessively reduced, and mask manufacturing efficiency is reduced, and therefore, the width dimension is preferably 90mm or less.

In this way, the frame body 3 is formed in a shape in which the rectangular cross-sectional shape of the minimum width portion of the inner frame portion satisfies the condition that the ratio of the thickness dimension T to the width dimension W of the minimum width portion is a value within the above range. In this way, by setting the aspect ratio of the cross-sectional shape of the minimum width portion within a predetermined range, an appropriate thickness is secured without being excessively large with respect to the width, and a degree of difficulty in deformation (rigidity) of the minimum width portion with respect to bending is reliably given based on the cross-sectional shape, so that deflection of the minimum width portion due to its own weight is less likely to occur, and strength with respect to a force that attempts to deform the frame body 3 from the mask body side is secured, and deformation of the frame body 3 and an influence on the mask body 2 due to the deformation are suppressed, thereby improving the accuracy of the position of the through hole of the mask body 2, and enabling high-accuracy vapor deposition with respect to the vapor deposition target.

In addition, each portion other than the minimum width portion of the frame body 3 has a cross-sectional shape capable of providing a desired bending rigidity, and by appropriately setting the thickness with respect to the width dimension while sufficiently securing strength with respect to the force from the mask main body side, an increase in weight of the frame body 3 due to an increase in thickness (cross-sectional area) more than necessary is suppressed, and an increase in deflection due to the weight and the own weight of the entire vapor deposition mask is prevented.

On the other hand, the frame body 3 is configured to have a laminated structure in which the first frame member 3a and the second frame member 3b having the same shape are integrally joined to each other with an adhesive interposed therebetween in an overlapping manner. The first frame member 3a and the second frame member 3b are frame members formed from a thin metal plate material manufactured through the same thin plate manufacturing process, and have a laminated structure as the frame body 3 in which warping directions are reversed based on warping caused by internal strain of the thin metal plate material from the thin plate manufacturing process.

In this way, the first frame member 3a and the second frame member 3b having the same shape, which are formed by cutting or the like from the metal thin plate material manufactured through the same thin plate manufacturing process, specifically, the rolling process, are integrally joined by the adhesive so that the warping directions thereof are opposite to each other, whereby the warping of the obtained frame body 3 is cancelled and becomes flat (see fig. 5). In fig. 5, the magnitudes of the warping of the first frame member 3a and the second frame member 3b are exaggerated for easy understanding, and the actual warping is extremely small. However, these warpage levels are such that if they are directly present in the frame 3, they affect the mask body 2, deteriorate the accuracy of the position thereof, and hinder the high accuracy of the vapor deposition mask, and therefore, the above-described laminated structure eliminates warpage.

In the present embodiment, a sheet-like uncured photosensitive dry film resist is used as the adhesive so as to be interposed between the first frame member 3a and the second frame member 3 b. After the first frame member 3a and the second frame member 3b are joined, unnecessary portions of the resist other than the portion to be the adhesive layer 3c between the first frame member 3a and the second frame member 3b are removed. In addition to these, various adhesives that are generally available can be used as the adhesive. Further, if a flat state in which the warpage is offset by joining, that is, a state in which the flatness and parallelism of the front and back surfaces of the frame body in the stage of forming the frame body 3 are within the allowable range, the planar shape, the sectional shape, and the magnitude of the warpage of the first frame member 3a and the second frame member 3b may be different.

By integrally joining the first frame member 3a and the second frame member 3b so that the warping directions thereof are directed in opposite directions, the flat frame body 3 is formed, and therefore, even when the thickness of the frame body 3 reaches a thickness at which warping is likely to occur when a single sheet of thin plate material is used, unnecessary deformation such as warping does not occur, and therefore, deposition can be performed with high accuracy using the mask without adversely affecting the positional accuracy of the mask main body.

The frame body 3 is formed of a material having a low thermal expansion coefficient, such as a invar material which is a nickel-iron alloy or a super invar material which is a nickel-iron-cobalt alloy. The frame body 3 is connected and integrated with the outer peripheral edge 2b of the pattern forming region 2a of the mask body 2 so as not to be separated from each other by the metal layer 7 formed by electroforming.

When the frame body 3 is made of invar or super-invar, the coefficient of thermal expansion thereof is extremely small, and thus, the dimensional change of the mask body 2 due to the thermal influence in the vapor deposition process can be favorably suppressed. That is, even if the mask body 2 is made of a material having a thermal expansion coefficient larger than that of normal glass as a vapor deposition target substrate (not shown), for example, nickel, the dimensional change and the shape change due to the expansion of the mask body 2 at the time of temperature rise can be favorably suppressed by keeping the characteristic that the thermal expansion coefficient of the frame body 3 of the mask body 2 is small, and the integration accuracy at the time of temperature rise at the time of vapor deposition can be favorably maintained, without causing a shift between the position of the through hole with respect to the substrate when the vapor deposition mask 1 and the vapor deposition position of the vapor deposition substance at the time of actual vapor deposition due to a difference in thermal expansion coefficient caused by a high temperature at the time of vapor deposition.

The material of the frame 3 may be a material having a low thermal expansion coefficient close to that of glass or the like as a substrate to be deposited, for example, a material similar to glass or ceramic. In this case, conductivity is imparted to at least the surface of these materials.

The vapor deposition mask 1 is manufactured as follows: a primary pattern resist 14 is provided on the surface of a die 10 so as to correspond to a portion where a primary electrodeposition layer 15 is not provided, a primary electrodeposition layer 15 is formed on the die 10 by electroforming of an electrodeposited metal, a secondary pattern resist 18 is formed so as to cover a portion corresponding to a pattern forming region 2a of the primary electrodeposition layer 15, a frame 3 is arranged so as to surround the primary electrodeposition layer 15, a metal layer 7 is formed by electroforming so as to cover the surface of the frame 3 and the surface of the outer peripheral edge 2b of the primary electrodeposition layer 15, the primary electrodeposition layer 15 and the frame 3 are integrally connected to each other via the metal layer 7 so as not to be separated from each other, and in this state, the primary electrodeposition layer 15, the frame 3, and the metal layer 7 integrated with each other are separated from the die 10.

The female die 10 used in the manufacturing process of the vapor deposition mask 1 according to the present embodiment is made of a material having conductivity, such as stainless steel, brass, or steel, and supports the primary electrodeposition layer 15 forming the mask body 2 before separation in the manufacturing process of the vapor deposition mask, and forms the primary pattern resist 14, the primary electrodeposition layer 15, the secondary pattern resist 18, and the metal layer 7 on the front surface side in each stage of the manufacturing process of the vapor deposition mask. When the primary electrodeposition layer 15 or the metal layer 7 is formed, the primary electrodeposition layer 15 or the metal layer 7 is formed by electroforming (plating) on the portion of the surface of the die 10 that is not covered with the resist and can be electrified by applying electricity through the die 10.

For the die 10, a material having a low thermal expansion coefficient such as 42 alloy (42% nickel-iron alloy), invar (36% nickel-iron alloy), SUS430, or the like can be used. In addition, the die may be a die in which a metal film made of a conductive metal such as chromium or titanium is formed on the surface of an insulating substrate such as a glass plate or a resin plate.

In the manufacturing process of the vapor deposition mask 1, the metal layer 7 is formed on the concave die 10 by plating (see fig. 11B), and then the concave die 10 is separated from the metal layer 7 and removed (see fig. 11C). When the concave die 10 is made of a stainless material, it is preferable to use a method of physically peeling and removing the concave die from the vapor deposition mask side by applying a force, and when the concave die 10 is made of another metal material, it is preferable to use an etching method of dissolving and removing the concave die using a chemical solution. In the case of etching, an etching solution having selective etching properties is used which dissolves the material of the primary electrodeposition layer 15, the frame 3, and the metal layer 7 without damaging the material by using the die 10.

The primary electrodeposition layer 15 is made of nickel, nickel-cobalt or other nickel alloy suitable for electroforming, and is formed by electroforming on the portion of the die 10 where the primary pattern resist 14 is not present. In the vapor deposition mask 1, the primary electrodeposition layer 15 is formed so as to remove the layer of the mask body 2 covering the surface of the vapor deposition substrate, in which the vapor deposition through-holes 8 corresponding to the vapor deposition target portions such as the light emitting layer of the vapor deposition substrate are formed.

The primary pattern resist 14 is made of an insulating material having solubility resistance to the electrolyte solution used for electroforming of the primary electrodeposition layer 15, is disposed so as to correspond to the non-disposed portion of the primary electrodeposition layer 15 set in advance on the die 10, and is removed after the primary electrodeposition layer 15 is formed (see fig. 6 and 7).

The primary pattern resist 14 is disposed on the die 10 before the primary electrodeposition layer 15 is formed, a photosensitive resist, for example, a negative photosensitive dry film resist is disposed on the die 10 so as to have a predetermined thickness, for example, a thickness of about 20 μm, and is formed into a shape corresponding to a non-disposed portion of the primary electrodeposition layer 15 by curing by exposure to ultraviolet light irradiation, developing to remove the resist in the non-irradiated portion, and the like in a state where a mask thin film 12 having a predetermined pattern corresponding to the position of the mask body 2 of the vapor deposition mask 1, that is, the position where the primary electrodeposition layer 15 is disposed is placed.

The secondary pattern resist 18 is formed of an insulating material having a thickness preferably in the range of 100 to 120 μm, which has resistance to dissolution with respect to an electrolyte used for plating the metal layer 7, is disposed before the metal layer 7 is formed so as to correspond to a non-disposed portion of the metal layer 7 preset in the primary electrodeposition layer 15, and is removed after the metal layer 7 is formed (see fig. 8 and 9).

The secondary pattern resist 18 is formed into a shape corresponding to the non-disposed portion of the metal layer 7 (the pattern forming region 2a of the mask body 2) by a series of steps of attaching a photosensitive resist, for example, a negative photosensitive dry film resist, to the die 10 and the disposed primary electrodeposition layer 15, exposing the resist with ultraviolet irradiation while placing a mask 17 having a predetermined pattern corresponding to the positions of the metal layer 7 and the frame body 3 of the vapor deposition mask 1 thereon, one or more times, forming a desired resist thickness, and then removing the photosensitive material at the non-irradiated portion during exposure by a developing process or the like.

The metal layer 7 is formed by plating, is made of nickel, nickel-cobalt alloy, or the like, and is formed by plating on the die 10, the arranged primary electrodeposition layer 15, and the exposed portion of the frame 3 where the secondary pattern resist 18 is not arranged.

The metal layer 7 bonds the outer peripheral edge 2b of the pattern forming region 2a of the mask body 2 and the frame 3. The metal layer 7 is laminated on the upper surface of the mask body 2 at the outer peripheral edge 2b of the pattern forming region by plating. More specifically, the metal layer 7 is formed on the upper surface of the outer peripheral edge 2b of the pattern forming region 2a, the upper surface of the frame 3 and the side surface on the pattern forming region 2a side, and the gap portion between the mask body 2 and the frame 3, and therefore, the outer peripheral edge 2b of the pattern forming region 2a and the opening peripheral edge of the frame 3 are integrally connected so as not to be separated from each other.

Next, a process for forming a frame of a vapor deposition mask according to the present embodiment and a process for manufacturing the entire vapor deposition mask including the frame will be described.

First, a process of forming the frame 3 for reinforcing the mask body 2 will be described.

First, the first frame member 3a and the second frame member 3b having the same shape are formed from a common metal sheet material subjected to rolling or the like through a cutting process by electric discharge machining, laser machining, or the like. When the second frame member 3b is cut from the thin metal plate material, a portion of the thin metal plate material set as the second frame member 3b is provided so as to be reversed in orientation with respect to a portion of the first frame member 3a, and warping due to strain is generated in the first frame member 3a and the second frame member 3b in opposite orientations.

After the cutting, the cut members are finished as the first frame member 3a and the second frame member 3b by providing the opening regions 6 by etching, laser processing, or the like. An adhesive serving as an adhesive layer 3c is interposed between the obtained first frame member 3a and second frame member 3b, and the frame members 3 are integrally joined in a state where the directions of warping are reversed, whereby a frame body 3 having each portion formed in a predetermined cross-sectional shape is obtained.

As the adhesive for integrating the first frame member 3a and the second frame member 3b, for example, a sheet-like photosensitive dry film resist having adhesiveness in an uncured state is used, and by using the same material as that used in the subsequent step, it is possible to prepare the adhesive so as to replace a part of the adhesive by a corresponding amount, and it is not necessary to additionally prepare a commercially available adhesive only for providing an adhesive layer, and it is possible to reduce the manufacturing cost of the vapor deposition mask by that amount, which is preferable because it is possible to reduce the manufacturing cost of the vapor deposition mask by that amount.

If necessary, the step of fixing the joined state may be performed by a device capable of applying a clamping pressure to the stacked members, such as a pair of pressure rollers, to the first frame member 3a and the second frame member 3b that are integrated into a single piece.

After bonding, unnecessary portions of the adhesive layer 3c, that is, portions located outside the opening region 6 and the outer frame portion 4 are removed, whereby the frame body 3 is completed. In the case where the adhesive is a thin film resist, the adhesive is removed by a developing step.

The completed frame 3 is provided with another adhesive layer 19 for bonding it to the die 10. As the adhesive layer 19, for example, a photosensitive dry film resist having adhesiveness in an uncured state can be used by pasting the film resist to the frame body 3 and then removing the film resist at a portion located in the opening region 6 of the frame body 3 and a portion protruding from the outer frame portion 4, thereby obtaining the adhesive layer 19.

In the manufacturing process of the vapor deposition mask, first, the resist layer 11 is disposed on the concave die 10 in correspondence with the vapor deposition through holes 8 of the mask body 2 set in advance on the concave die 10, that is, the non-disposed portions of the primary electrodeposition layer 15 (see fig. 6). Specifically, for example, a negative-type photosensitive dry film resist is stacked one or more times on the front surface side of the die 10 in accordance with a predetermined thickness (for example, about 20 μm) necessary for forming the primary electrodeposition layer 15, and a resist layer 11 is formed by thermocompression bonding (see fig. 6 a).

Then, a mask film (glass mask) 12 having a predetermined pattern corresponding to the arrangement position of the primary electrodeposition layer 15, such as light transmission holes 12a corresponding to the vapor deposition through-holes 8, is brought into close contact with the surface of the resist layer 11, followed by curing by exposure to ultraviolet light (see fig. 6(B) and (C)), development for removing the resist in the non-irradiated portions which have been masked, and drying processes. In this way, the primary pattern resist 14 corresponding to the non-arranged portion of the primary electrodeposition layer 15 is formed on the die 10 (see fig. 7 a).

The primary pattern resist 14 can be formed by any method other than photolithography using a photoresist or the like, and the forming method is not limited to the above.

The die 10 having the primary pattern resist 14 is placed in an electroforming bath initially set to a predetermined condition, and a primary electrodeposition layer 15 having a thickness of, for example, 8 μm to be the mask body 2 is formed on the surface (exposed region) of the die 10 not covered with the primary pattern resist 14 within the range of the thickness of the primary pattern resist 14 by electroforming of an electrodeposited metal such as a nickel alloy (see fig. 7B).

Then, the primary pattern resist 14 is removed by dissolution to obtain a primary electrodeposition layer 15 serving as a mask body 2, and the mask body 2 is provided with a plurality of independent vapor deposition through holes 8 for forming a predetermined vapor deposition pattern 9 (see fig. 7C).

After the primary electrodeposition layer 15 is obtained, a resist layer 16 having a thickness preferably in the range of 50 to 60 μm is provided on the entire surface of the die 10 including the portion where the primary electrodeposition layer 15 is formed. Specifically, a negative-type photosensitive dry film resist having a thickness of, for example, 56 μm is stuck to the surface side of the die 10, and the main portion is cured by exposure. This process is repeated a plurality of times as necessary so that the secondary pattern resist 18 finally obtained from the resist layer 16 has a predetermined thickness, thereby forming a resist layer 16 having a single-layer or laminated structure of one or a plurality of thin-film resists.

The exposure of the thin film resist was performed every time one sheet was pasted. Specifically, the method is performed as the following steps: the mask film 17 having the light transmission holes 17a corresponding to the pattern forming regions 2a of the mask body 2 is brought into close contact with the surface of the newly attached thin film resist, and then cured by exposure to ultraviolet light irradiation (see fig. 8B and 9 a).

This step is repeated as necessary to obtain a resist layer 16a cured by exposure having a predetermined thickness in a portion corresponding to the pattern forming region 2a, and an unexposed resist layer 16b having a predetermined thickness in the other portion.

In this embodiment, the process of attaching a thin film resist and exposing is repeated twice to form the resist layer 16 having a double layer thickness of 56 μm.

Then, the unexposed resist layer 16b exposed on the surface is dissolved and removed to form a secondary pattern resist 18 having a thickness of 112 μm covering the pattern forming region 2a (see fig. 9C).

After the secondary pattern resist 18 is formed in this way, a member in which the adhesive layer 19 is preliminarily disposed on the lower surface side of the frame 3 formed through the frame forming step is aligned and disposed at a predetermined position on the primary electrodeposition layer 15 (see fig. 9C).

In this state, the frame 3 can be temporarily fixed to the primary electrodeposition layer 15 so as not to be easily moved due to the adhesiveness of the adhesive layer 19.

The temporarily fixed frame 3 is pressed by applying a load from above the frame 3, so that the frame 3 is not easily separated from the primary electrodeposition layer 15 (see fig. 10). Specifically, first, as the temporary pressure bonding, a static load is applied to the frame 3 to press the frame toward the die side for a predetermined time. That is, a glass plate of 50kg or more, for example, 105kg, is placed on the frame 3 and left for 1 hour or more, for example, 4 hours. In the temporary pressure bonding, any object other than the glass plate may be used as the static load as long as the object can be placed on the housing 3.

Next, each part of the frame 3 is uniformly pressed as a main pressure contact, and firmly fixed to the primary electrodeposition layer 15. Specifically, after removing the glass plate or the like, a pressing roller (laminator) that performs pressing with a pressure of 0.1MPa or more, for example, 0.6MPa while relatively moving with respect to the housing 3 is reciprocated by one or more, for example, three reciprocations on the housing 3 to perform pressing.

As this pressure bonding, when the pressing is performed by the pressing roller, a plate body having high rigidity, which is not easily deformed, for example, a plate made of SUS material is interposed between the housing 3 and the roller, and when the pressing by the roller is performed through the plate body, the force from the roller is dispersed by the plate body and transmitted to the housing 3, and as compared with the case of performing the pressing directly by the roller, the deviation of the pressing force is less likely to occur, which is preferable.

In addition, an object in which a plate body having high rigidity and a sheet material made of an elastic material such as rubber are stacked may be interposed between the frame body 3 and the roller in a state where the sheet material side faces the frame body 3, and the roller may be pressed via the plate body and the sheet material. In this case, the uneven state of the gap between the plate body and the frame body due to slight inclination, strain, unevenness, and the like of the plate body surface can be absorbed by the elastic deformation of the sheet interposed between the plate body and the frame body, and the force from the roller can be transmitted more uniformly to the frame body 3 via the sheet in close contact with the frame body 3, and the frame body 3 can be pressed against the primary electrodeposition layer 15 more uniformly, and the occurrence of a gap between the frame body 3 and the primary electrodeposition layer 15 can be suppressed, and adverse effects such as abnormal growth of plating guided by the gap when the metal layer 7 is formed can be prevented.

Further, in addition to the pressing of the frame 3 as the main pressure contact by the pressure roller (laminator), a press-type device capable of pressing the frame 3 by operating the pressing portion only in the thickness direction of the frame 3 can be used, and it is preferable that a problem of lateral displacement of the frame due to erroneous application of a force in the roller tangential direction (lateral direction) to the frame from the rolling roller as in the case of pressing by the roller is not caused.

After the pressure bonding step, the metal layer 7 is formed by plating of an electrodeposited metal on the upper surface of the primary electrodeposition layer 15 exposed to the surface of the outer peripheral edge 2B of the pattern forming region 2a without being covered with the secondary pattern resist 18, the exposed surfaces of the primary electrodeposition layer 15a on the lower side of the frame 3 and the die 10 exposed to the surface at the side thereof, and the surface of the frame 3 (see fig. 11B). The primary electrodeposition layer 15 and the frame 3 can be integrally connected by the metal layer 7 so as not to be separated from each other.

In this case, the metal layer 7 is formed to be thinner on the surface of the frame 3 than on the upper surface of the primary electrodeposition layer 15 exposed on the surface of the outer peripheral edge 2b of the pattern forming region 2a and on the surface of the die 10 exposed on the surface between the primary electrodeposition layer 15 and the frame 3. This difference in thickness is caused by the fact that the metal layer 7 is laminated in order from the surface of the die 10 and the primary electrodeposition layer 15, and when the height of the metal layer exceeds the height of the adhesive layer 19 and reaches the frame 3, the frame 3 starts to be in a state of conduction with the die 10 and the primary electrodeposition layer 15, and the metal layer 7 starts to be formed on the surface of the frame 3.

After the formation of the metal layer 7 is completed, the primary electrodeposition layer 15, the frame body 3, and the metal layer 7 are peeled off integrally from the die 10 as a final step (see fig. 11C). Then, the primary electrodeposition layer 15a present on the lower side of the frame body 3 is removed together with the adhesive layer 19, and then the secondary pattern resist 18 is removed, thereby completing the production of the vapor deposition mask 1. When the adhesive layer 19 remains on the lower side of the frame 3, the removal is performed when the secondary pattern resist 18 is removed.

In this way, in the vapor deposition mask of the present embodiment, since the sectional shape of the minimum width portion of the inner frame portion 5 of the frame body 3 is formed so that the relationship between the width and the thickness is appropriate, and the bending rigidity of the minimum width portion is reliably given, a necessary and sufficient strength is given against the force from the mask main body 2 side, and the deviation of each portion of the mask main body 2 from the position where it should exist is suppressed as the whole of the frame body 3 together with the other portion of the frame body 3 which is wider than the minimum width portion and has a higher strength, so that the state of alignment between the mask and the vapor deposition substrate in the vapor deposition step can be secured, and vapor deposition can be performed with high accuracy at an appropriate position of the vapor deposition substrate. Further, the difficulty of bending deformation of the minimum width portion suppresses flexure due to the weight of the minimum width portion, and suppresses deformation of the frame body 3 and the influence of the deformation on the mask main body 2.

The vapor deposition mask of the above embodiment is configured such that the mask body 2 is disposed so as to be positioned in each opening region 6 of the frame body 3, and only one pattern forming region 2a in which a plurality of vapor deposition through holes 8 are provided is disposed inside the mask body, but the present invention is not limited thereto, and the mask body 2 may have a plurality of pattern forming regions 2a as shown in fig. 12. In this case, in order to reliably suppress the misalignment of the mask main body 2, it is preferable to ensure sufficient rigidity by forming the width of each part of the frame around the mask main body to be larger than the width dimension allowed as the minimum width part. In addition, instead of providing only one mask body 2 in each opening region 6 of the frame body 3, a plurality of mask bodies 2 may be arranged in a row in one opening region 6. In this case, the outer peripheral edge of the mask body 2 is divided into a portion adjacent to the frame body 3 and a portion adjacent to each other in the mask body, and in the portion adjacent to each other in the mask body, the mask bodies are joined integrally to each other by a metal layer formed by plating, as in the case of joining the mask body 2 and the frame body 3 integrally.

Further, the vapor deposition mask of the above embodiment is configured such that the frame body 3 is formed by integrally joining the first frame member 3a and the second frame member 3b having the same shape, but the present invention is not limited to this, and it is also possible to configure such that the first frame member 3a and the second frame member 3b have different shapes, for example, as shown in fig. 13, the opening of the first frame member 3a on the side away from the mask body 2 is made larger than the opening of the second frame member 3b on the side close to the mask body 2, and the width of each part of the second frame member 3b is made larger than the first frame member 3a, and then the first frame member 3a and the second frame member 3b are integrally joined to form the frame body 3. In this case, since the opening region 6 of the frame 3 is widened at a position distant from the mask body 2 and the peripheral portion surrounding the opening region 6 is in a state of receding, in the vapor deposition step, the peripheral portion around the opening region 6 in the frame 3 is less likely to be an obstacle to the travel of the vapor deposition material with respect to the vapor deposition material toward the substrate to be vapor deposited via the opening region 6 of the frame 3 and the vapor deposition through holes 8 of the mask body 2, and the influence of the frame 3 can be eliminated with respect to each vapor deposition through hole 8, so that the vapor deposition material can smoothly travel, and vapor deposition can be performed more appropriately.

Further, the vapor deposition mask of the above embodiment is manufactured by forming the metal layer 7 so as to contact the primary electrodeposition layer 15 and the frame body 3, and integrating the primary electrodeposition layer 15 and the frame body 3 by the metal layer 7, but the present invention is not limited to this, and it is also possible to configure such that the frame body 3 is placed on the lower primary electrodeposition layer 15, and the primary electrodeposition layer 15 and the frame body 3 are integrated by adhesion with an adhesive stronger than an uncured thin film resist interposed therebetween, and the primary electrodeposition layer, that is, the mask body 2 and the frame body 3 can be easily integrated, thereby improving the manufacturing efficiency of the mask. In this case, the metal layer is further formed so as to cover the surface of the mask body 2 and the surface of the frame body 3, whereby the bonded state of the mask body 2 and the frame body 3 is more preferably set. In particular, by covering the surface (side portion) of the adhesive with the metal layer, it is possible to effectively prevent the adhesive from being deteriorated due to cleaning treatment or temperature rise, and to maintain the bonded state between the mask body 2 and the frame body 3 for a long period of time.

In the production of the vapor deposition mask according to the above embodiment, the metal layer 7 is formed on the surface of the frame 3 after the frame 3 is placed on the die 10, but the present invention is not limited to this, and a resist may be provided on a part or the whole of the upper surface of the frame before the metal layer 7 is formed by plating, so that the metal layer 7 is not formed on the entire upper surface of the frame, and the metal layer 7 may be provided only on a part of the upper surface of the frame except for a necessary portion, omitted, and the stress relaxing portion may be provided on the surface of the frame 3.

In this case, the metal layer 7 is not uniformly continuous but locally incomplete on the upper surface of the frame 3, and thus, even if an internal stress is generated in the metal layer, the internal stress does not act on the entire frame 3 but locally and intermittently acts, so that the frame 3 is less likely to be adversely affected by deformation or the like, and a planar shape can be secured.

In the production of the vapor deposition mask according to the above-described embodiment, the metal layer 7 is formed on the primary electrodeposition layer 15 without performing any special surface treatment thereon, but the present invention is not limited to this, and the activation treatment such as acid dipping or electrolytic treatment may be performed on a predetermined range in which the metal layers are arranged in a superposed manner on the primary electrodeposition layer 15 at a stage after the primary electrodeposition layer 15 is formed and before the metal layer 7 is formed.

In this case, the bonding strength between the activated portion of the primary electrodeposition layer 15 and the metal layer 7 thereon is significantly improved as compared with the case of no treatment. Instead of the activation treatment, a thin layer of strike nickel, matte nickel, or the like may be formed in a predetermined range of the primary electrodeposition layer 15. This also improves the bonding strength between the thin layer-formed portion of the primary electrodeposition layer 15 and the metal layer 7 thereon.

In addition, although the vapor deposition mask of the above embodiment is manufactured such that the primary electrodeposition layer 15, the frame body 3, and the metal layer 7 are simply in planar contact with each other, in addition to this, a plurality of through holes or recesses may be provided over the entire circumference of the outer peripheral edge 2b of the pattern forming region 2a in the primary electrodeposition layer 15 (mask body 2), and the metal layer 7 formed on the outer peripheral edge 2b of the primary electrodeposition layer 15 may be formed in a state in which the metal layer 7 is partially recessed into the outer peripheral edge 2b by filling the through holes or recesses.

In this case, the metal layer 7 is present not only on the upper surface of the outer peripheral edge 2b of the pattern forming region 2a but also in each through hole or recess of the outer peripheral edge 2b with respect to the primary electrodeposition layer 15, and the bonding strength with the outer peripheral edge 2b of the primary electrodeposition layer 15 is increased. This allows the mask body 2 and the frame body 3 to be integrated and connected more firmly via the metal layer 7, and thus, unintentional detachment and displacement of the mask body 2 from the frame body 3 can be reliably suppressed, and the vapor deposition accuracy and the reproduction accuracy of the vapor deposition formed product can be further improved.

In the production of the vapor deposition mask according to the above embodiment, the structure of the primary electrodeposition layer 15 to be the mask body 2 formed on the surface of the die 10 not covered with the primary pattern resist 14 is not particularly described in detail, but the primary electrodeposition layer 15 may be formed in a double-layer structure of a matte nickel layer formed on the die 10 side and a glossy nickel layer formed on the matte nickel layer. Specifically, an electrodeposition layer made of matte nickel is formed by electroforming on the surface of the die 10 not covered with the primary pattern resist 14, and then an electrodeposition layer made of glossy nickel is formed thereon by electroforming to produce the primary electrodeposition layer 15. In the relationship between the thicknesses of the matte nickel layer and the bright nickel layer, if the matte nickel layer is made too thick, the tension generated in the completed mask body 2 becomes excessively large, and the frame body 3 may be deformed, and therefore, the ratio of the thickness of the bright nickel layer to the thickness of the matte nickel layer is preferably about 5/7.

The order of formation of the matte nickel layer and the bright nickel layer may be reversed to form a two-layer structure in which the matte nickel layer is formed on the bright nickel layer. However, in the latter case of the double-layer structure in which the matte nickel layer is formed on the matte nickel layer, it is considered that the probability of occurrence of interlayer peeling is higher than that in the former case of the double-layer structure, and therefore, the former double-layer structure in which the matte nickel layer is formed on the matte nickel layer is preferably employed.

By adopting the two-layer structure in which the nickel matte layer is disposed on the upper side of the nickel matte layer and the nickel matte layer is made appropriately thicker than the nickel matte layer as described above, the tension (tensile stress) that tends to contract inward can be increased in the completed mask body 2, and the vapor deposition mask 1 having excellent heat resistance can be obtained in which the mask body 2 is not deformed even when the mask body is affected by the expansion of each portion due to heat.

Further, when the primary electrodeposition layer is formed only of matte nickel, the tension generated in the completed mask body 2 becomes excessively large, which may cause deformation of the frame body 3, and the surface of the matte nickel layer constituting the primary electrodeposition layer becomes a rough surface, which increases the bonding force to the surface by plating or the like, and thus, there is a problem that the primary electrodeposition layer 15a and the metal layer 7 cannot be separated easily in the mask manufacturing process. The above-mentioned primary electrodeposition layer of a two-layer structure in which a glossy nickel layer is formed on a matte nickel layer can also avoid such a problem. In the case of forming a two-layer structure of a glossy nickel layer on this matte nickel layer, the bonding force is reduced in the glossy nickel layer portion of the primary electrodeposition layer compared to the matte nickel layer, and the primary electrodeposition layer 15 and the metal layer 7 are easily separated by a certain amount, but the bonding strength with the metal layer can be sufficiently ensured by formation of a through hole in the primary electrodeposition layer, activation treatment, or thin layer formation of impact nickel, matte nickel, or the like.

Claims

1. A vapor deposition mask is provided with: a plurality of mask bodies in which a plurality of independent evaporation through holes are arranged in a predetermined pattern; and a frame body disposed around the mask body,

the vapor deposition mask described above is characterized in that,

the frame body has a rectangular outer frame portion positioned at the outermost periphery and an inner frame portion dividing the inner side of the outer frame portion into a plurality of opening regions, and is formed in a lattice shape as a whole,

the mask main bodies are respectively positioned in a plurality of opening regions of the frame body and are integrated with the frame body,

the cross-sectional shape of a portion of the inner frame portion of the frame body that has the narrowest width in the thickness direction of the frame body is set such that the ratio of the thickness dimension to the width dimension is 0.8/4 to 2/4,

the thickness of the frame is set to be 0.8mm to 2 mm.

2. The vapor deposition mask according to claim 1, wherein the mask is a mask having a mask body with a mask opening,

the cross-sectional shape of the frame other than the portion of the outer frame portion and the inner frame portion that has the narrowest width in the thickness direction of the frame is set to a ratio of the thickness dimension to the width dimension of 0.8/90 or more, and is smaller than a ratio of the thickness dimension to the width dimension of the portion of the inner frame portion that has the narrowest width.

3. The vapor deposition mask according to claim 1 or 2, wherein the mask is a mask having a mask body and a mask body,

the frame body has a laminated structure in which a first frame member and a second frame member are integrated in a superposed manner,

the first frame member and the second frame member are frame members formed of a thin metal plate material and having warping directions that are opposite to each other.