TW201918800A - Exposure system, exposure method, and manufacturing method of panel substrate for display especially having exposure patterns of different sizes on a single substrate - Google Patents
Exposure system, exposure method, and manufacturing method of panel substrate for display especially having exposure patterns of different sizes on a single substrate Download PDFInfo
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- TW201918800A TW201918800A TW107139679A TW107139679A TW201918800A TW 201918800 A TW201918800 A TW 201918800A TW 107139679 A TW107139679 A TW 107139679A TW 107139679 A TW107139679 A TW 107139679A TW 201918800 A TW201918800 A TW 201918800A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
本發明係關於一種使用近接法的曝光裝置,於單片基板將複數個圖樣曝光的曝光系統、曝光方法及使用這些的顯示用面板基板的製造方法,特別是關於使用複數個曝光裝置,於單片基板將不同尺寸的圖樣曝光的曝光系統、曝光方法及使用這些的顯示用面板基板的製造方法。The present invention relates to an exposure system using a proximity method, an exposure system for exposing a plurality of patterns on a single substrate, an exposure method, and a method of manufacturing a display panel substrate using the same, and more particularly to using a plurality of exposure devices. An exposure system for exposing patterns of different sizes of a sheet substrate, an exposure method, and a method of manufacturing a panel substrate for display using the same.
被作為顯示用面板使用的液晶顯示裝置的TFT(Thin Film Transistor)基板及彩色濾光片基板、電漿顯示面板用基板等的製造,係使用曝光裝置,藉由光刻技術於基板上形成圖樣以進行。作為曝光裝置,有使用透鏡或反射鏡將遮罩的圖樣投影於基板上的投影法,及於遮罩與基板之間設置微小的間隙(Proximity gap)而將遮罩的圖樣轉印至基板的近接法。近接法相較於投影法雖然解析度表現差,但照射光學系統的構造簡單,且處理能力高因而適合量產用。Manufacturing of a TFT (Thin Film Transistor) substrate, a color filter substrate, a plasma display panel substrate, and the like of a liquid crystal display device used as a display panel, using an exposure apparatus to form a pattern on a substrate by photolithography To proceed. As an exposure apparatus, there is a projection method in which a pattern of a mask is projected onto a substrate using a lens or a mirror, and a pattern of a mask is transferred to the substrate by providing a slight gap between the mask and the substrate. Close connection method. Although the proximity method has poor resolution compared to the projection method, the structure of the illumination optical system is simple, and the processing capability is high, so that it is suitable for mass production.
顯示用面板的各種基板的製造中,為了對應大型化及尺寸的多樣化,準備相對較大的基板,對應顯示用面板的尺寸,於單片基板形成單一或複數個顯示用面板的圖樣。此狀況下,若是欲藉由近接法將基板的一面一齊曝光,則必須有與基板相同大小的遮罩,高額的遮罩成本將進一步增加。在此使用相較於基板為小的遮罩,藉由移動平台將基板於XY方向步進移動的同時,將基板的一面分為複數個鏡頭而曝光的分割曝光為主流。In the manufacture of various substrates for the display panel, a relatively large substrate is prepared in accordance with the increase in size and size, and a single or a plurality of display panels are formed on a single substrate in accordance with the size of the display panel. In this case, if one side of the substrate is to be exposed by the proximity method, it is necessary to have a mask of the same size as the substrate, and the cost of the high mask is further increased. Here, a mask having a smaller footprint than the substrate is used, and the substrate is stepped in the XY direction by the moving platform, and the split surface of the substrate is divided into a plurality of lenses to expose the exposure.
液晶顯示裝置的彩色濾光片基板,為了與TFT基板貼合,遍佈於基板整體的各圖樣的位置被要求為高精度。近接法的分割曝光法中,於各鏡頭使用CCD相機等,取得遮罩的校準標記及基板的校準標記的圖像,藉由圖像處理檢測出兩者的偏移量,進行遮罩與基板的位置校準。但是,於最先形成於彩色濾光片基板的黑底的曝光,基板的表面尚未形成有對位標記。因此,彩色濾光片基板的黑底的曝光中,使基板步進移動時,使用雷射測量系統而精度良好地進行基板的定位,確保位置精度。雷射測量系統,包含用以產生雷射光的光源、安裝於夾盤或移動平台的反射機構(柱狀鏡)及用以測定源自光源的雷射光與藉由反射機構(柱狀鏡)而被反射的雷射光的干涉的雷射干涉計。In order to bond the TFT substrate to the color filter substrate of the liquid crystal display device, the position of each pattern spread over the entire substrate is required to be high precision. In the split exposure method of the proximity method, a CCD camera or the like is used for each lens to obtain an image of the calibration mark of the mask and the calibration mark of the substrate, and the offset between the two is detected by image processing to perform masking and substrate Position calibration. However, in the exposure of the black matrix formed first on the color filter substrate, the alignment mark is not formed on the surface of the substrate. Therefore, in the exposure of the black matrix of the color filter substrate, when the substrate is stepwise moved, the position of the substrate is accurately performed using the laser measurement system, and the positional accuracy is ensured. a laser measuring system comprising a light source for generating laser light, a reflecting mechanism (column mirror) mounted on a chuck or a moving platform, and a laser light for measuring the light source and a reflecting mechanism (column mirror) Interferometric laser interferometer for reflected laser light.
另一方面,專利文獻1中,揭示有一種技術,係於彩色濾光片基板等的曝光中,藉由使用雷射的標記裝置,於經塗佈於基板的光阻層,形成基板的各曝光區域的校準標記,將對於單片基板的複數個曝光區域的曝光,分擔於複數個曝光裝置間而進行。 〔先前技術文獻〕 [專利文獻]On the other hand, Patent Document 1 discloses a technique for forming a substrate by applying a laser marking layer to a photoresist layer coated on a substrate by exposure using a color filter substrate or the like. The alignment mark of the exposure region is performed by sharing exposure of a plurality of exposure regions of the single substrate between a plurality of exposure devices. [Previous Technical Literature] [Patent Literature]
專利文獻1:日本特開2004-294770號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 2004-294770
[發明所欲解決之問題] 伴隨近年來顯示用面板的大型化,基板的尺寸亦不斷大型化。為了盡量不浪費地使用大型的基板,必須使於單片的基板將尺寸相異的顯示用面板的圖樣曝光,將面板的表面利用效率(相對於基板整體的面積的使用面積的比例)提升。為了將尺寸相異的圖樣曝光,變得需要複數個遮罩,並變得需要複數個曝光位置。但是,上述的藉由雷射測量系統的定位,僅能於單一個曝光裝置內曝光的複數個圖樣間維持位置精度。因此,若是將基板自夾盤取出而移動至別的曝光裝置,則無法維持已經曝光的圖樣與即將曝光的圖樣之間的位置精度。因此,以往將形成有尺寸相異的圖樣的校準標記的校準標記專用的遮罩予以準備,設置校準標記專用的曝光裝置,事先於基板形成校準標記的步驟係為必須。因此會有校準標記形成步驟相關的設備費用及運作成本增加的問題。[Problems to be Solved by the Invention] In recent years, as the size of the display panel has increased, the size of the substrate has also increased in size. In order to use a large-sized substrate as much as possible without waste, it is necessary to expose a pattern of a display panel having a different size to a single-piece substrate, and to improve the surface use efficiency (ratio of the area of use of the area of the entire substrate) of the panel. In order to expose patterns of different sizes, it becomes necessary to have a plurality of masks and become a plurality of exposure positions. However, the above-described positioning by the laser measuring system can only maintain positional accuracy between a plurality of patterns exposed in a single exposure apparatus. Therefore, if the substrate is taken out from the chuck and moved to another exposure device, the positional accuracy between the already exposed pattern and the pattern to be exposed cannot be maintained. Therefore, conventionally, a mask dedicated to a calibration mark of a calibration mark having a pattern of different sizes is prepared, and an exposure apparatus dedicated to the calibration mark is provided, and a step of forming a calibration mark on the substrate in advance is necessary. Therefore, there is a problem that the equipment cost and the operation cost associated with the calibration mark forming step increase.
另一方面,專利文獻1所記載的技術,係藉由使用雷射的標記裝置,於經塗佈於基板的光阻層,形成基板的各曝光區域的校準標記。此標記裝置中,為了測定進行標記的雷射光的光學系統的位置,使用雷射測量系統(參照專利文獻1的段落[0022]、[0033]及[0036])。為了將依圖樣的各尺寸而位置相異的複數個校準標記,以高精度形成而遍佈於大型的基板整體,高精度且高價的雷射測量系統為必須,標記裝置的設備費用會增加。又即使將基板向XY方向移動,亦必須要有用以檢測出移動基板的XY平台及XY平台的位置的雷射測量系統,使設備費用及設置空間增加。並且,專利文件1所記載的技術中,進一步追加有於基板的各曝光區域形成校準標記的步驟,有生產節拍大幅增加的問題。On the other hand, in the technique described in Patent Document 1, a calibration mark for each exposure region of the substrate is formed on the photoresist layer applied to the substrate by using a laser marking device. In this marking device, a laser measuring system is used in order to measure the position of the optical system for performing the marked laser light (see paragraphs [0022], [0033], and [0036] of Patent Document 1). In order to form a plurality of calibration marks having different positions depending on the respective dimensions of the pattern and to spread over a large substrate as a whole, a highly accurate and expensive laser measurement system is necessary, and the equipment cost of the marking device increases. Further, even if the substrate is moved in the XY direction, it is necessary to use a laser measuring system for detecting the position of the XY stage and the XY stage of the moving substrate, thereby increasing the equipment cost and the installation space. Further, in the technique described in Patent Document 1, a step of forming a calibration mark in each exposure region of the substrate is further added, and there is a problem that the production tact is greatly increased.
本發明的課題在於不大幅增加設備或步驟,於單片基板將尺寸相異的圖樣以高位置精度曝光。又本發明的課題係為高精度地製造表面利用效率良好的顯示用面板基板。 〔解決問題的技術手段〕An object of the present invention is to expose a pattern having a different size to a single substrate with high positional accuracy without greatly increasing the number of devices or steps. Further, an object of the present invention is to produce a display panel substrate having excellent surface utilization efficiency with high precision. [Technical means to solve the problem]
本發明的曝光系統,包含一標記裝置,係於經塗佈於一基板的一光阻上,以指定的間隔形成複數個基板標記;以及複數個曝光裝置,係於該基板曝光一圖樣,其中,複數個該曝光裝置,分別包含一遮罩架,係用以支承一遮罩,該遮罩的尺寸較該基板小,且形成有該圖樣及複數個遮罩標記,該遮罩標記係以與該基板標記為相同間隔所形成;一夾盤,係用以搭載該基板,該基板形成有複數個該基板標記;一平台,係使該遮罩架及該夾盤相對地移動;一驅動電路,係用以驅動該平台;一圖像取得裝置,係用以取得該遮罩標記及該基板標記的圖像,並將取得的圖像的一圖像訊號輸出;一圖像處理裝置,係用以將自該圖像取得裝置輸出的該圖像訊號予以處理,而檢測出該遮罩標記與該基板標記的偏移量;一雷射測量裝置,係用以檢測出該平台的位置;及一控制裝置,係用以控制該驅動電路,對應藉由該圖像處理裝置所檢測出的該遮罩標記與該基板標記的偏移量,使該平台移動以進行該遮罩標記與該基板標記的位置校準,而進行該遮罩及該基板的相對位置定位,之後基於該雷射測量裝置的檢測結果,使該平台移動以將該圖樣控制於該基板曝光的位置,其中,該曝光系統將彼此為相異尺寸的該圖樣於該基板曝光。The exposure system of the present invention comprises a marking device for forming a plurality of substrate marks at a predetermined interval on a photoresist coated on a substrate; and a plurality of exposure devices for exposing a pattern to the substrate, wherein a plurality of the exposure devices each comprising a mask frame for supporting a mask, the mask is smaller in size than the substrate, and the pattern and the plurality of mask marks are formed, and the mask marks are Formed at the same spacing as the substrate; a chuck for mounting the substrate, the substrate is formed with a plurality of the substrate marks; a platform for moving the mask frame and the chuck relatively; a driving a circuit for driving the platform; an image acquisition device for acquiring the mask mark and the image of the substrate mark, and outputting an image signal of the obtained image; an image processing device, The image signal output from the image acquisition device is processed to detect the offset of the mask mark from the substrate mark; a laser measuring device is used to detect the position of the platform And one control The device is configured to control the driving circuit, corresponding to the offset of the mask mark and the substrate mark detected by the image processing device, to move the platform to perform the mask mark and the substrate mark Position calibration, and performing relative positioning of the mask and the substrate, and then moving the platform to control the pattern to the exposed position of the substrate based on the detection result of the laser measuring device, wherein the exposure systems will each other The pattern of different sizes is exposed to the substrate.
又本發明的曝光方法包含以下步驟:藉由一標記裝置,於經塗佈於一基板的一光阻上,以指定的間隔形成複數個基板標記;於複數個曝光裝置中,分別將一遮罩支承於一遮罩架,該遮罩的尺寸較該基板小,且形成有該圖樣及複數個遮罩標記,該遮罩標記係以與該基板標記為相同間隔所形成;將形成有複數個該基板標記的該基板搭載於一夾盤;將該遮罩架及該夾盤藉由一平台而相對地移動;藉由一圖像取得裝置,取得該遮罩標記及該基板標記的圖像,並將取得的圖像的一圖像訊號輸出;藉由一圖像處理裝置,將自該圖像取得裝置輸出的該圖像訊號予以處理,而檢測出該遮罩標記與該基板標記的偏移量;利用一雷射測量裝置,檢測出該平台的位置;以及對應該圖像處理裝置所檢測出的該遮罩標記與該基板標記的偏移量,使該平台移動,並且進行該遮罩標記與該基板標記的位置校準,而進行該遮罩及該基板的相對位置定位,之後基於該雷射測量裝置的檢測結果,使該平台移動,將該圖樣控制於該基板曝光的位置,於該基板進行該圖樣的曝光,將彼此為相異尺寸的該圖樣曝光於該基板。The exposure method of the present invention further comprises the steps of: forming a plurality of substrate marks at a predetermined interval on a photoresist coated on a substrate by a marking device; and separately covering the plurality of exposure devices The cover is supported by a mask frame having a smaller size than the substrate, and the pattern and the plurality of mask marks are formed, the mask marks are formed at the same interval as the substrate mark; The substrate marked by the substrate is mounted on a chuck; the mask frame and the chuck are relatively moved by a platform; and the mask mark and the substrate mark are obtained by an image acquisition device And outputting an image signal of the obtained image; and processing the image signal outputted from the image obtaining device by an image processing device to detect the mask mark and the substrate mark Offset; detecting the position of the platform by using a laser measuring device; and offsetting the mask mark and the substrate mark detected by the image processing device, moving the platform, and performing The mask Recording the position of the substrate mark, and performing relative positioning of the mask and the substrate, and then moving the platform based on the detection result of the laser measuring device, and controlling the pattern to the position where the substrate is exposed. The substrate is exposed to the pattern, and the pattern of mutually different sizes is exposed to the substrate.
藉由標記裝置,於經塗佈於基板的光阻上以指定的間隔形成基板標記,因此相較於設置校準標記專用的曝光裝置的狀況,設置費用及運作成本大幅削減。又相較於專利文獻1所記載的技術,設置費用及運作成本大幅削減。並且,於複數個曝光裝置中,由於分別檢測出遮罩的遮罩標記與基板標記的偏移量,應檢測出的遮罩標記與基板標記的偏移量,移動平台,進行遮罩標記與基板標記的位置校準,進行遮罩與基板的相對位置定位,因此即使將基板自一個曝光裝置移動至別的曝光裝置,亦能夠維持遮罩與基板的相對位置,能夠將藉由各曝光裝置以曝光的圖樣彼此的位置維持於高精度。又於複數個曝光裝置中,分別使用雷射測量裝置,檢測出平台的位置,結束遮罩標記與基板標記的位置校準後,基於雷射測量裝置的檢測結果,移動平台,控制圖樣於基板曝光的位置,再進行圖樣於基板的曝光,而將彼此尺寸相異的圖樣於基板曝光,因此能夠將各尺寸的圖樣於預期的位置高精度地曝光。因此,能夠不大幅增加設備或步驟,而以高位置精度使不同尺寸的圖樣被曝光於單一片基板。Since the substrate mark is formed at a predetermined interval on the photoresist applied to the substrate by the marking device, the installation cost and the operation cost are greatly reduced as compared with the case of the exposure device dedicated to the calibration mark. Further, compared with the technique described in Patent Document 1, the installation cost and the operation cost are greatly reduced. Further, in a plurality of exposure apparatuses, since the offset amount of the mask mark and the substrate mark are respectively detected, the offset amount of the mask mark and the substrate mark to be detected is moved, the platform is moved, and the mask mark is performed. The positional alignment of the substrate mark is performed to position the relative position of the mask and the substrate. Therefore, even if the substrate is moved from one exposure device to another exposure device, the relative position of the mask and the substrate can be maintained, and each exposure device can be The positions of the exposed patterns are maintained at high precision. And in a plurality of exposure devices, respectively, using a laser measuring device to detect the position of the platform, and after ending the position calibration of the mask mark and the substrate mark, based on the detection result of the laser measuring device, moving the platform, controlling the pattern to be exposed on the substrate At the position, the pattern is exposed to the substrate, and the patterns different in size from each other are exposed on the substrate, so that the patterns of the respective sizes can be exposed with high precision at a desired position. Therefore, it is possible to expose different sizes of patterns to a single sheet substrate with high positional accuracy without greatly increasing the equipment or steps.
進一步,本發明的曝光系統,該遮罩於兩個方向分別形成兩個以上的遮罩標記,基板係為長方形,於其長邊方向或短邊方向形成有兩個以上的基板標記,複數個曝光裝置,係將基板以縱向或橫向的狀態搭載於夾盤,藉由圖像取得裝置,取得遮罩標記及基板標記的圖像,而進行遮罩標記與基板標記的位置校準。Further, in the exposure system of the present invention, the mask forms two or more mask marks in two directions, the substrate is rectangular, and two or more substrate marks are formed in the longitudinal direction or the short side direction, and plural numbers are formed. In the exposure apparatus, the substrate is mounted on the chuck in a longitudinal or lateral direction, and an image of the mask mark and the substrate mark is obtained by the image acquisition device, and the position of the mask mark and the substrate mark is aligned.
又本發明的曝光方法,於遮罩的兩個方向分別形成兩個以上的遮罩標記,於長方形的基板的長邊方向或短邊方向形成有兩個以上的基板標記,於複數個曝光裝置中,係將基板以縱向或橫向的狀態搭載於夾盤,藉由圖像取得裝置,取得遮罩標記及基板標記的圖像,而進行遮罩標記與基板標記的位置校準。Further, in the exposure method of the present invention, two or more mask marks are formed in two directions of the mask, and two or more substrate marks are formed in the longitudinal direction or the short side direction of the rectangular substrate, and the plurality of exposure means are formed. In this case, the substrate is mounted on the chuck in a longitudinal or lateral direction, and an image of the mask mark and the substrate mark is obtained by the image acquisition device, and the position of the mask mark and the substrate mark is aligned.
由於在遮罩的兩個方向,分別形成兩個以上的遮罩標記,及於長方形的基板的長邊方向或短邊方向形成兩個以上的基板標記,因此使用標記裝置於基板形成的基板標記為少量即可。並且,由於在複數個曝光裝置,以縱向或橫向的狀態將基板搭載於夾盤,因此配置於基板上的長方形的曝光區域,對應於其縱橫的方向被曝光。Since two or more mask marks are respectively formed in two directions of the mask, and two or more substrate marks are formed in the longitudinal direction or the short side direction of the rectangular substrate, the substrate mark formed on the substrate by the marking device is used. For a small amount. Further, since the substrate is mounted on the chuck in a longitudinal or lateral direction in a plurality of exposure apparatuses, the rectangular exposure region disposed on the substrate is exposed in the longitudinal and lateral directions.
進一步,本發明的曝光系統中,複數個曝光裝置中的至少一個,係基於雷射測量裝置的檢測結果,進行複數次平台的移動,而將複數個圖樣曝光於基板。又本發明的曝光方法中,複數個曝光裝置中的至少一個,係基於雷射測量裝置的檢測結果,進行複數次平台的移動,而將複數個圖樣曝光於該基板。藉此,將多量配置有尺寸相對小的相同圖樣的表面利用效率良好的基板有效率地曝光。Further, in the exposure system of the present invention, at least one of the plurality of exposure devices performs movement of the plurality of stages based on the detection result of the laser measuring device, and exposes the plurality of patterns to the substrate. Further, in the exposure method of the present invention, at least one of the plurality of exposure apparatuses performs movement of the plurality of stages based on the detection result of the laser measuring apparatus, and exposes the plurality of patterns to the substrate. Thereby, a large number of surfaces on which the same pattern having a relatively small size is disposed are efficiently exposed by a substrate having good efficiency.
進一步,本發明的曝光系統中,標記裝置具有曝光元件,自曝光元件對基板標記的周圍照射曝光光線而將基板標記曝光。又本發明的曝光方法中,標記裝置具有曝光元件,自曝光元件對基板標記的周圍照射曝光光線而將基板標記曝光。藉由於基板形成有基板標記,並且確認基板標記的存在,以辨認出實施有本發明。Further, in the exposure system of the present invention, the marking device has an exposure element that irradiates the periphery of the substrate mark with the exposure light to expose the substrate mark. Further, in the exposure method of the present invention, the marking device has an exposure element which irradiates the periphery of the substrate mark with the exposure light and exposes the substrate mark. The present invention has been recognized by the fact that the substrate mark is formed on the substrate and the presence of the substrate mark is confirmed.
或是本發明的曝光系統中,複數個曝光裝置中最後進行曝光的曝光裝置,在進行遮罩標記與基板標記的位置校準後,將遮罩標記及基板標記於基板曝光。又本發明的曝光方法中,複數個曝光裝置中最後進行曝光的曝光裝置,在進行遮罩標記與基板標記的位置校準後,將遮罩標記及基板標記曝光於基板。藉由於基板形成有遮罩標記及基板標記,並且確認遮罩標記及基板標記的存在,以辨認出實施有本發明。In the exposure system of the present invention, the exposure device that is finally exposed in the plurality of exposure devices performs the positional alignment of the mask mark and the substrate mark, and then exposes the mask mark and the substrate mark to the substrate. Further, in the exposure method of the present invention, the exposure device that is finally exposed in the plurality of exposure devices exposes the mask mark and the substrate mark to the substrate after performing the positional alignment of the mask mark and the substrate mark. The present invention has been recognized by the fact that the mask mark and the substrate mark are formed on the substrate, and the presence of the mask mark and the substrate mark is confirmed.
本發明的顯示用面板基板的製造方法,係利用上述任一的曝光系統,進行基板的曝光,或是利用上述任一的曝光方法,進行基板的曝光。 〔對照先前技術之功效〕In the method for producing a panel substrate for display according to the present invention, exposure of the substrate is performed by any one of the above exposure systems, or exposure of the substrate is performed by any of the above exposure methods. [Compared with the efficacy of prior art]
依據本發明的曝光系統及曝光方法,能夠不大幅增加設備或步驟,而將尺寸相異的圖樣以高位置精度曝光於單片基板。According to the exposure system and the exposure method of the present invention, it is possible to expose a pattern having a different size to a single substrate with high positional accuracy without greatly increasing the number of devices or steps.
進一步,於遮罩的兩個方向分別形成兩個以上的遮罩標記,於長方形的基板的長邊方向或短邊方向形成有兩個以上的基板標記,藉此能夠讓使用標記裝置於基板形成的基板標記為少量即可。並且,於複數個曝光裝置中,將基板以縱向或橫向的狀態搭載於夾盤,藉此能夠將配置於基板上的長方形的曝光區域,對應於其縱橫的方向被曝光 。Further, two or more mask marks are formed in each of the two directions of the mask, and two or more substrate marks are formed in the longitudinal direction or the short side direction of the rectangular substrate, whereby the marking device can be formed on the substrate. The substrate is marked as a small amount. Further, in a plurality of exposure apparatuses, the substrate is mounted on the chuck in the longitudinal direction or the lateral direction, whereby the rectangular exposure region disposed on the substrate can be exposed in the longitudinal and lateral directions.
進一步,將複數個曝光裝置中的至少一個,基於雷射測量裝置的檢測結果,進行複數次平台的移動,而複數次進行圖樣的曝光於基板,藉此能夠將多量配置有尺寸相對小的相同圖樣的表面利用效率良好的基板予以有效率地曝光。Further, at least one of the plurality of exposure devices performs movement of the plurality of stages based on the detection result of the laser measuring device, and the pattern is exposed to the substrate a plurality of times, whereby a plurality of sizes can be arranged with a relatively small size. The surface of the pattern is efficiently exposed using a substrate that is efficient.
進一步,於標記裝置設置曝光元件,自曝光元件對基板標記的周圍照射曝光光線而將基板標記曝光,藉此於基板形成基板標記,並且確認基板標記的存在,藉此辨認出實施有本發明。Further, the exposure device is provided in the marking device, and the exposure light is applied from the exposure member to the periphery of the substrate mark to expose the substrate mark, whereby the substrate mark is formed on the substrate, and the presence of the substrate mark is confirmed, whereby the present invention is recognized.
或者,複數個曝光裝置中最後進行曝光的曝光裝置,在進行遮罩標記與基板標記的位置校準後,將遮罩標記及基板標記曝光於基板,藉此於基板形成遮罩標記及基板標記,並且確認遮罩標記及基板標記的存在,藉此辨認出實施有本發明。Alternatively, the exposure device that performs the last exposure in the plurality of exposure devices exposes the mask mark and the substrate mark to the substrate after performing the positional alignment of the mask mark and the substrate mark, thereby forming the mask mark and the substrate mark on the substrate. Further, by confirming the presence of the mask mark and the substrate mark, it is recognized that the present invention is implemented.
依據本發明的顯示用面板的製造方法,由於能夠以高位置精度將尺寸相異的圖樣曝光於單片的基板,因此能夠高精度地製造表面利用效率良好的顯示用面板。According to the method for manufacturing a display panel of the present invention, since a pattern having a different size can be exposed to a single substrate with high positional accuracy, a display panel having excellent surface use efficiency can be manufactured with high precision.
[實施形態] (曝光系統的構成) 圖1係顯示根據本發明的一實施形態的曝光系統的示意構成的圖。本實施形態的曝光系統,構成為包含有曝光裝置A及曝光裝置B的兩個曝光裝置,及標記裝置C。另外,曝光裝置亦能設置3個以上。本實施形態的曝光裝置A及曝光裝置B,係為相同構造,所使用的遮罩及搭載於夾盤上的基板的方向為相異。[Embodiment] (Configuration of Exposure System) Fig. 1 is a view showing a schematic configuration of an exposure system according to an embodiment of the present invention. The exposure system of this embodiment is configured as two exposure devices including an exposure device A and an exposure device B, and a marking device C. In addition, three or more exposure apparatuses can be provided. The exposure apparatus A and the exposure apparatus B of the present embodiment have the same structure, and the directions of the mask used and the substrate mounted on the chuck are different.
圖2的(a)係顯示曝光裝置A的俯視圖,圖2的(b)係顯示曝光裝置A的側視圖。又圖3的(a)係顯示曝光裝置B的俯視圖,圖3的(b)係顯示曝光裝置B的側視圖。曝光裝置A係構成為包含基底3、X導件4、X平台5、Y導件6、Y平台7、θ平台8、夾盤支承台9、夾盤10、遮罩架20、圖像處理裝置30、複數個相機元件31、雷射測量裝置40、平台驅動電路50及主控裝置60。曝光裝置A設有X平台5、Y導件6、Y平台7、θ平台8、夾盤支承台9及夾盤10各兩組。曝光裝置B亦構成為與曝光裝置A相同。Fig. 2(a) is a plan view showing the exposure device A, and Fig. 2(b) is a side view showing the exposure device A. 3(a) shows a plan view of the exposure device B, and FIG. 3(b) shows a side view of the exposure device B. The exposure device A is configured to include a substrate 3, an X guide 4, an X platform 5, a Y guide 6, a Y platform 7, a θ stage 8, a chuck support table 9, a chuck 10, a mask frame 20, and image processing. The device 30, the plurality of camera elements 31, the laser measuring device 40, the platform driving circuit 50, and the main control device 60. The exposure device A is provided with two groups of an X platform 5, a Y guide 6, a Y platform 7, a θ platform 8, a chuck support table 9, and a chuck 10. The exposure device B is also configured to be the same as the exposure device A.
另外,圖1及圖3中,省略了曝光裝置B的圖像處理裝置30、雷射測量裝置40、平台驅動電路50及主控裝置60。又於圖2中,省略了曝光裝置A的圖像處理裝置30、雷射測量裝置40、平台驅動電路50及主控裝置60。曝光裝置A、B除了這些之外,亦具有照射曝光光線的照射光學系統及部分阻絕曝光光線的曝光用快門等。又曝光系統除了曝光裝置A、B及標記裝置C以外,亦具有將基板1搬入至曝光裝置A、B的各夾盤10,或是將基板1自曝光裝置A、B的各夾盤10搬出的基板搬運機器人,以及用以進行裝置內的溫度管理的溫度控制元件等。In addition, in FIGS. 1 and 3, the image processing device 30, the laser measuring device 40, the platform driving circuit 50, and the main control device 60 of the exposure device B are omitted. In FIG. 2, the image processing device 30, the laser measuring device 40, the platform driving circuit 50, and the main control device 60 of the exposure device A are omitted. In addition to these, the exposure apparatuses A and B also have an illumination optical system that illuminates the exposure light, and an exposure shutter that partially blocks the exposure light. Further, in addition to the exposure apparatuses A and B and the marking device C, the exposure system also has the chuck 10 for carrying the substrate 1 into the exposure apparatuses A and B, or the substrate 1 is carried out from the chucks 10 of the exposure apparatuses A and B. The substrate transfer robot and temperature control elements for performing temperature management in the device.
另外,以下所說明的實施形態中的XY方向為例示,X方向與Y方向亦可彼此對調。In addition, the XY direction in the embodiment described below is an example, and the X direction and the Y direction may be mutually adjusted.
於圖2及圖3中,各夾盤10,分別位在進行基板1的搭載及卸載的搭載/卸載位置。於各搭載/卸載位置,藉由基板搬運機器人,基板1被搬入至各夾盤10,或基板1被自各夾盤10搬出。各夾盤10,自各搭載/卸載位置至進行基板1的曝光的曝光位置交互移動。In FIGS. 2 and 3, each of the chucks 10 is placed at a mounting/unloading position at which the substrate 1 is mounted and unloaded. At each of the mounting/unloading positions, the substrate 1 is carried into the respective chucks 10 by the substrate transfer robot, or the substrates 1 are carried out from the respective chucks 10. Each of the chucks 10 is alternately moved from the respective mounting/unloading positions to the exposure positions at which the exposure of the substrate 1 is performed.
曝光位置的上方,設置有遮罩架20。於圖2中,遮罩2被支承於曝光裝置A的遮罩架20。於圖3中,遮罩2’被支承於曝光裝置B的遮罩架20。遮罩架20設置有曝光光線通過的開口,遮罩架20藉由未圖示的設置於開口周圍的吸附溝,將遮罩2、2’的周邊部真空吸附而支承。被遮罩架20所支承的遮罩2、2’的上方,分別配置有未圖示的曝光用快門及照射光學系統。曝光時,藉由源自各照射光學系統的曝光光線通過遮罩2、2’而照射至基板1,遮罩2、2’的圖樣被轉印至基板1的表面,於基板1上形成圖樣。Above the exposure position, a mask frame 20 is provided. In FIG. 2, the mask 2 is supported by the mask frame 20 of the exposure apparatus A. In Fig. 3, the mask 2' is supported by the mask frame 20 of the exposure device B. The mask frame 20 is provided with an opening through which the exposure light passes, and the mask frame 20 is vacuum-sucked and supported by the peripheral portions of the masks 2, 2' by an adsorption groove provided around the opening (not shown). An exposure shutter (not shown) and an illumination optical system are disposed above the masks 2, 2' supported by the mask frame 20, respectively. At the time of exposure, the exposure light from each illumination optical system is irradiated to the substrate 1 through the masks 2, 2', and the patterns of the masks 2, 2' are transferred to the surface of the substrate 1 to form a pattern on the substrate 1. .
遮罩架20的上方設置有四個相機元件31。各相機元件31,取得後述的遮罩2、2’的遮罩標記及基板1的基板標記的圖像,將取得的圖像的圖像訊號,輸出至圖1的圖像處理裝置30。圖像處理裝置30,處理自各相機元件31所輸出的各圖像訊號,而檢測出遮罩2、2’的遮罩標記與基板1的基板標記的偏移量。主控裝置60,對應藉由圖像處理裝置30所檢測出的遮罩標記與基板標記的偏移量,控制平台驅動電路50,進行遮罩標記與基板標記的位置校準,而進行遮罩與基板的相對位置定位。另外,相機元件,亦能夠構成為一個或兩個以上的相機元件對應遮罩2、2’的遮罩標記的位置而移動。Four camera elements 31 are disposed above the mask frame 20. Each of the camera elements 31 obtains an image of the mask marks of the masks 2, 2' and the substrate marks of the substrate 1 to be described later, and outputs the image signals of the acquired images to the image processing apparatus 30 of Fig. 1 . The image processing device 30 processes the image signals output from the respective camera elements 31, and detects the offset amount of the mask marks of the masks 2, 2' and the substrate marks of the substrate 1. The main control device 60 controls the platform driving circuit 50 to perform position calibration of the mask mark and the substrate mark corresponding to the offset amount of the mask mark and the substrate mark detected by the image processing device 30, and performs masking and masking. The relative position of the substrate is positioned. Further, the camera element can also be configured such that one or two or more camera elements move in accordance with the position of the mask mark of the masks 2, 2'.
圖2的(b)及圖3的(b)中,各夾盤10,透過夾盤支承台9搭載於θ平台8,θ平台8下方設置有Y平台7及X平台5。X平台5搭載於設置在基底3的X導件4,沿著X導件4向X方向(圖2的(b)及圖3的(b)的圖中橫方向)移動。Y平台7搭載於設置在X平台5的Y導件6,沿著Y導件6向Y方向(圖2的(b)及圖3的(b)的圖中深入方向)移動。θ平台8搭載於Y平台7,向θ方向旋轉。夾盤支承台9搭載於θ平台8,將夾盤10的裏面以複數個部位支承。X平台5、Y平台7及θ平台8設置有滾珠絲槓、馬達及線性馬達等未圖示的驅動機構,各驅動機構藉由圖1的平台驅動電路50而被驅動。In (b) of FIG. 2 and (b) of FIG. 3, each chuck 10 is mounted on the θ stage 8 through the chuck support table 9, and the Y stage 7 and the X stage 5 are provided below the θ stage 8. The X stage 5 is mounted on the X guide 4 provided on the base 3, and moves along the X guide 4 in the X direction (the horizontal direction in the drawings of FIG. 2(b) and FIG. 3(b)). The Y stage 7 is mounted on the Y guide 6 provided on the X stage 5, and moves along the Y guide 6 in the Y direction (the depth direction in FIG. 2(b) and FIG. 3(b)). The θ stage 8 is mounted on the Y stage 7 and rotates in the θ direction. The chuck support table 9 is mounted on the θ stage 8, and supports the inside of the chuck 10 at a plurality of locations. The X platform 5, the Y platform 7, and the θ stage 8 are provided with drive mechanisms (not shown) such as a ball screw, a motor, and a linear motor, and each drive mechanism is driven by the stage drive circuit 50 of FIG.
藉由各X平台5向X方向的移動及各Y平台7向Y方向的移動,各夾盤10被移動於各搭載/卸載位置及曝光位置之間。於各搭載/卸載位置,藉由各X平台5向X方向的移動、各Y平台7向Y方向的移動及各θ平台8向θ方向的旋轉,進行搭載於各夾盤10的基板1的預對位。於曝光位置,藉由各X平台5的向X方向的移動及各Y平台7向Y方向的移動,進行搭載於夾盤10的基板1向XY方向的移動。又藉由未圖示的Z-傾斜機構將遮罩架20向Z方向(圖2的(b)及圖3的(b)的圖中的上下方向)移動及傾斜,進行遮罩2、2’與基板1的縫隙校準。於圖1,主控裝置60控制平台驅動電路50,進行各X平台5向X方向的移動、各Y平台7向Y方向的移動及各θ平台8向θ方向的旋轉。Each of the chucks 10 is moved between each of the mounting/unloading positions and the exposure position by the movement of the X stages 5 in the X direction and the movement of the Y stages 7 in the Y direction. At each of the mounting/unloading positions, the movement of each of the X stages 5 in the X direction, the movement of the Y stages 7 in the Y direction, and the rotation of the θ stages 8 in the θ direction are performed on the substrate 1 of each of the chucks 10 . Pre-alignment. At the exposure position, the substrate 1 mounted on the chuck 10 is moved in the XY direction by the movement of the X stages 5 in the X direction and the movement of the Y stages 7 in the Y direction. Further, the mask frame 20 is moved and tilted in the Z direction (the vertical direction in the drawings of FIG. 2(b) and FIG. 3(b)) by a Z-tilt mechanism (not shown) to perform the masks 2, 2 'Curve calibration with the substrate 1. In FIG. 1, the main control unit 60 controls the stage drive circuit 50 to move the X stages 5 in the X direction, the Y stages 7 in the Y direction, and the θ stages 8 in the θ direction.
另外,本實施形態中,雖藉由將遮罩架20向Z方向移動及傾斜,以進行遮罩2、2’與基板1的縫隙校準,但亦可於各夾盤支承台9設置Z-傾斜機構,藉由將各夾盤10向Z方向移動及傾斜,以進行遮罩2、2’與基板1的縫隙校準。又本實施形態雖然藉由各X平台5及各Y平台7將夾盤10向XY方向移動,但亦可設置將遮罩架20向XY方向移動的平台,將遮罩架20向XY方向移動。Further, in the present embodiment, the gap between the masks 2, 2' and the substrate 1 is calibrated by moving and tilting the mask frame 20 in the Z direction. However, Z- may be provided for each of the chuck support tables 9. The tilt mechanism adjusts the gap between the masks 2, 2' and the substrate 1 by moving and tilting the chucks 10 in the Z direction. In the present embodiment, the chuck 10 is moved in the XY direction by each of the X stages 5 and the Y stages 7. However, a platform for moving the mask frame 20 in the XY direction may be provided, and the mask frame 20 may be moved in the XY direction. .
雷射測量裝置40,能夠使用日本特開2009-31639號公報所記載的包含雷射光源、雷射干涉計及柱狀鏡的雷射測量系統及雷射測量系統控制裝置,其詳細係省略。The laser measuring device 40 can use a laser measuring system including a laser light source, a laser interferometer, and a lenticular lens, and a laser measuring system control device described in Japanese Laid-Open Patent Publication No. 2009-31639, the details of which are omitted.
圖4係顯示標記裝置的構成例的圖。標記裝置C構成為包含有架台70、桌台71、雷射標記器72、標記器驅動電路73、標記器移動裝置74及曝光元件75。被架台70所支承的桌台71,為用以搭載基板1,亦能夠為例如進行曝光前的基板1的溫度調節的冷卻板。桌台71的下方設置有兩個雷射標記器72。各雷射標記器72被標記器驅動電路73所驅動,產生雷射光。桌台71設置有雷射光可通過的窗口71a。自各雷射標記器72產生的雷射光,通過窗口71a,穿透基板1,對塗佈於基板1表面的光阻照射。所照射的雷射光,聚焦於光阻的表面,藉由雷射光的熱量,基板1表面的光阻被昇華而削減,於基板1形成基板標記。Fig. 4 is a view showing a configuration example of a marking device. The marking device C is configured to include a gantry 70, a table 71, a laser marker 72, a marker drive circuit 73, a marker moving device 74, and an exposure element 75. The table 71 supported by the gantry 70 is a cooling plate for mounting the substrate 1 and, for example, for temperature adjustment of the substrate 1 before exposure. Two laser markers 72 are provided below the table 71. Each of the laser markers 72 is driven by a marker drive circuit 73 to generate laser light. The table 71 is provided with a window 71a through which laser light can pass. The laser light generated from each of the laser markers 72 passes through the window 71a, penetrates the substrate 1, and illuminates the photoresist applied to the surface of the substrate 1. The irradiated laser light is focused on the surface of the photoresist, and the light resistance of the surface of the substrate 1 is sublimated by the heat of the laser light to be reduced, and the substrate mark is formed on the substrate 1.
本實施形態,設置有兩組雷射標記器72及標記器驅動電路73。並且,自雷射標記器72所照射的雷射光的中心間的距離d,被設定為與後述的遮罩的遮罩標記間的距離相等。藉此,兩個基板標記正確地以距離d的間隔形成於基板1上。另外,使雷射標記器72為一個,移動搭載有基板1的桌台71的構造亦可。In the present embodiment, two sets of the laser marker 72 and the marker drive circuit 73 are provided. Further, the distance d between the centers of the laser light irradiated from the laser marker 72 is set to be equal to the distance between the mask marks of the mask to be described later. Thereby, the two substrate marks are correctly formed on the substrate 1 at intervals of the distance d. Further, the laser marker 72 may be one, and the structure of the table 71 on which the substrate 1 is mounted may be moved.
兩個基板標記,能夠形成於長方形的基板1的長邊方向,亦能夠形成於短邊方向。將基板標記的配置自基板1的長邊方向至短邊方向,或是自短邊方向至長邊方向變更時,將搭載於桌台71的基板1的方向,更換為縱向或橫向的方向。並且,藉由標記器移動裝置74,將各雷射標記器72移動至圖中的深入方向或圖中的跟前方向,調節各雷射標記器72的位置。標記器移動裝置74,構成為包含滾珠絲槓、馬達及線性馬達等所構成的驅動機構。或著是代替將雷射標記器72移動,而移動搭載有基板1的桌台71的構造亦可。The two substrate marks can be formed in the longitudinal direction of the rectangular substrate 1 or in the short side direction. When the arrangement of the substrate marks is changed from the longitudinal direction to the short side direction of the substrate 1 or from the short side direction to the long side direction, the direction of the substrate 1 mounted on the table 71 is changed to the longitudinal direction or the lateral direction. Further, the position of each of the laser markers 72 is adjusted by the marker moving device 74 by moving each of the laser markers 72 to the depth direction in the drawing or the front direction in the drawing. The marker moving device 74 is configured to include a drive mechanism including a ball screw, a motor, and a linear motor. Alternatively, instead of moving the laser marker 72, the structure of the table 71 on which the substrate 1 is mounted may be moved.
專利文獻1的標記裝置,對應設置於TFT基板的對向區域的周圍的對位標記的位置,於彩色濾光片基板形成對位標記,相對於此,本發明的標記裝置與TFT基板的對位標記無關,單純於基板1以指定的間隔形成兩個以上的基板標記即可。因此,本發明相較於專利文件1所記載的技術,設備費用及標記的步驟皆大幅減少。The marking device of Patent Document 1 forms an alignment mark on the color filter substrate in accordance with the position of the alignment mark provided around the opposite region of the TFT substrate, whereas the marking device of the present invention and the TFT substrate are opposed to each other. Regardless of the bit mark, it is sufficient that the substrate 1 is formed with two or more substrate marks at a predetermined interval. Therefore, in the present invention, the equipment cost and the marking step are greatly reduced as compared with the technique described in Patent Document 1.
桌台71的上方,設置有兩個曝光元件75。另外,亦能夠為移動單一個曝光元件75的構造。曝光元件75,對形成於基板1所塗佈的光阻的基板標記的周圍,照射點狀的曝光光線,而將基板標記曝光。藉由於基板1形成基板標記,並且確認基板標記的存在,以辨認出實施有本發明。如同後述,藉由曝光裝置B同時進行遮罩標記及基板標記的曝光時,不進行藉由此標記裝置C的基板標記的曝光。Above the table 71, two exposure elements 75 are provided. In addition, it is also possible to move the configuration of a single exposure element 75. The exposure element 75 irradiates the periphery of the substrate mark formed on the photoresist applied to the substrate 1 with spot-shaped exposure light to expose the substrate mark. The present invention is recognized by the fact that the substrate 1 is formed with a substrate mark and the presence of the substrate mark is confirmed. As will be described later, when the exposure of the mask mark and the substrate mark is simultaneously performed by the exposure device B, the exposure of the substrate mark by the marking device C is not performed.
另外,圖4所示的例子中,雖將雷射標記器72設置於桌台71的下方,但亦能將雷射標記器72設置於桌台71的上方,自基板1的上方對塗佈於基板1的光阻照射雷射光。亦能夠使標記裝置C設置於複數個曝光裝置中最先進行曝光的曝光裝置,於曝光前的基板1形成基板標記。Further, in the example shown in FIG. 4, the laser marker 72 is provided below the table 71, but the laser marker 72 can be placed above the table 71 and coated from above the substrate 1. The photoresist on the substrate 1 illuminates the laser light. It is also possible to provide the marking device C with an exposure device that is first exposed in a plurality of exposure devices, and form a substrate mark on the substrate 1 before exposure.
圖5係顯示使用於曝光裝置A的遮罩之一例的圖。又圖6係顯示使用於曝光裝置B的遮罩之一例的圖。本發明的曝光系統所使用的遮罩,其與基板1相對向的面(下面),與曝光的圖樣一同,於兩個方向分別以相同間隔形成有兩個以上的遮罩標記。圖5及圖6所示的遮罩2、2’的例子中,於X方向及Y方向分別並列配置有兩個遮罩標記2a、2a’。本實施形態中,遮罩2及遮罩2a’,為相同尺寸,且於兩個方向分別設有兩個遮罩標記2a、2a’的縱方向及橫方向的距離d,與藉由標記裝置C於基板1所形成的基板標記的間隔相同。並且,遮罩2與遮罩2’,由虛線所示的圖樣2b、2b’的數目、大小及位置相異。Fig. 5 is a view showing an example of a mask used in the exposure device A. 6 is a view showing an example of a mask used in the exposure device B. The mask used in the exposure system of the present invention has two or more mask marks at the same intervals in both directions along with the exposed surface (the lower surface) of the mask. In the examples of the masks 2, 2' shown in Figs. 5 and 6, two mask marks 2a, 2a' are arranged in parallel in the X direction and the Y direction, respectively. In the present embodiment, the mask 2 and the mask 2a' have the same size, and the distances d in the longitudinal direction and the lateral direction of the two mask marks 2a and 2a' are respectively provided in two directions, and the marking device is provided by the marking device. The spacing of the substrate marks formed by C on the substrate 1 is the same. Further, the mask 2 and the mask 2' differ in the number, size, and position of the patterns 2b and 2b' indicated by broken lines.
圖5及圖6所示的遮罩標記2a、2a’僅為例示,遮罩標記的形狀並不限於此,只要為藉由圖像處理裝置30的圖像辨識為容易的形狀即可。又圖5及圖6所示的圖樣2b、2b’僅為例示,各遮罩的圖樣的數目、大小及位置並不限於此。於曝光系統構成為包含有三個以上的曝光裝置時,進一步使用形成有不同圖樣的遮罩。The mask marks 2a and 2a' shown in Figs. 5 and 6 are merely examples, and the shape of the mask marks is not limited thereto, and may be a shape that is easily recognized by the image processing device 30. Further, the patterns 2b and 2b' shown in Figs. 5 and 6 are merely examples, and the number, size, and position of the patterns of the respective masks are not limited thereto. When the exposure system is configured to include three or more exposure devices, a mask formed with a different pattern is further used.
另外,圖5及圖6中,為了使遮罩標記2a、2a’易於觀察,將遮罩標記2a、2a’,相對於遮罩2、2’的尺寸顯示為較實際尺寸為大。相較於遮罩2的縱橫的尺寸約為數m,實際的遮罩標記2a、2a’的尺寸約為數百μm。Further, in Fig. 5 and Fig. 6, in order to make the mask marks 2a and 2a' easy to see, the mask marks 2a and 2a' are displayed to have larger sizes than the masks 2 and 2'. The actual mask marks 2a, 2a' have a size of about several hundred μm compared to the dimension of the mask 2 which is approximately several m.
(第一實施形態) 基板1的長邊方向或短邊方向,藉由標記裝置C,以指定的間隔形成有兩個以上的基板標記。圖7係顯示使用於本發明的第一實施形態的於長邊方向形成有兩個基板標記的基板之一例的圖。圖7所示的例子係圖5所示的遮罩2的四個遮罩標記2a之中,對應於左側的兩個遮罩標記2a,設置有兩個基板標記1a。遮罩標記2a、2a’與基板標記1a,當兩者中心位置為一致時,成為不會互相重合的形狀。於圖7中,遮罩2的圖樣2b的曝光區域1b,及遮罩2’的圖樣2b’的曝光區域1b’於基板1上以例如虛線所示而配置。(First Embodiment) In the longitudinal direction or the short-side direction of the substrate 1, two or more substrate marks are formed at predetermined intervals by the marking device C. Fig. 7 is a view showing an example of a substrate on which two substrate marks are formed in the longitudinal direction in the first embodiment of the present invention. The example shown in Fig. 7 is among the four mask marks 2a of the mask 2 shown in Fig. 5, and two mask marks 1a are provided corresponding to the two mask marks 2a on the left side. The mask marks 2a, 2a' and the substrate mark 1a have a shape in which they do not overlap each other when the center positions thereof are identical. In Fig. 7, the exposed area 1b of the pattern 2b of the mask 2 and the exposed area 1b' of the pattern 2b' of the mask 2' are arranged on the substrate 1 as indicated by a broken line, for example.
圖7所示的基板標記1a為例示,基板標記的形狀不限於此,只要為藉由圖像處理裝置30的圖像辨識易於辨識的形狀即可。又圖7所示的曝光區域1b、1b’為例示,曝光於基板1的各曝光區域的數目、大小及位置不限於此。又於曝光系統構成為包含有三個以上的曝光裝置時,進一步不同尺寸的圖樣的曝光區域係被配置於基板1上。The substrate mark 1a shown in FIG. 7 is exemplified, and the shape of the substrate mark is not limited thereto, and may be a shape that is easily recognizable by image recognition by the image processing device 30. Further, the exposure regions 1b and 1b' shown in Fig. 7 are exemplified, and the number, size, and position of each exposure region exposed to the substrate 1 are not limited thereto. Further, when the exposure system is configured to include three or more exposure devices, the exposure regions of the patterns of different sizes are disposed on the substrate 1.
另外,圖7中,為了使基板標記1a易於觀察,將基板標記1a,相對於基板1的尺寸顯示為較實際尺寸為大。相較於基板1的縱橫的尺寸約為數m,實際的基板標記1的尺寸約為數百μm。Further, in FIG. 7, in order to make the substrate mark 1a easy to see, the substrate mark 1a is shown to be larger than the actual size of the substrate 1. The actual substrate mark 1 has a size of about several hundred μm compared to the longitudinal and lateral dimensions of the substrate 1 of about several m.
圖8係顯示本發明的第一實施形態中的顯示於圖7的基板於夾盤上的方向的圖。圖8的(a)顯示曝光裝置A,圖8的(b)顯示曝光裝置B。本實施形態中,圖8的(a)所示的曝光裝置A,將於長邊方向形成有兩個基板標記1a的圖7的基板1,以縱向的狀態搭載於各夾盤10。於圖8的(a),圖中左側的夾盤10所搭載的基板1,圖樣皆未曝光。曝光裝置A,將遮罩2的圖樣2b曝光於基板1。於圖8的(a),圖中右側的夾盤10所搭載的基板1,結束了遮罩2的圖樣2b的曝光。於曝光裝置A,結束了遮罩2的圖樣2b的曝光的基板1,藉由基板搬運機器人,被搬運至圖8的(b)所示的曝光裝置B的圖中右側的夾盤10。Fig. 8 is a view showing a direction of the substrate shown in Fig. 7 on the chuck in the first embodiment of the present invention. (a) of FIG. 8 shows the exposure device A, and (b) of FIG. 8 shows the exposure device B. In the exposure apparatus A shown in FIG. 8(a), the substrate 1 of FIG. 7 in which the two substrate marks 1a are formed in the longitudinal direction is mounted on each of the chucks 10 in the vertical direction. In (a) of FIG. 8, the substrate 1 mounted on the chuck 10 on the left side of the drawing is not exposed. The exposure device A exposes the pattern 2b of the mask 2 to the substrate 1. In (a) of FIG. 8, the substrate 1 mounted on the chuck 10 on the right side in the drawing ends the exposure of the pattern 2b of the mask 2. In the exposure apparatus A, the substrate 1 which has finished the exposure of the pattern 2b of the mask 2 is transported to the chuck 10 on the right side in the drawing of the exposure apparatus B shown in FIG. 8(b) by the substrate transfer robot.
圖8的(b)所示的曝光裝置B,將於長邊方向形成有兩個基板標記1a的圖7的基板1,以橫向的狀態搭載於各夾盤10。並且曝光裝置B,將遮罩2’的圖樣2b’曝光於基板1。於圖8的(b),圖中右側的夾盤10所搭載的基板1,遮罩2’的圖樣2b’並未曝光。於圖8的(b),圖中左側的夾盤10所搭載的基板1,結束了遮罩2’的圖樣2b’的曝光。In the exposure apparatus B shown in FIG. 8(b), the substrate 1 of FIG. 7 in which two substrate marks 1a are formed in the longitudinal direction is mounted on each of the chucks 10 in a lateral direction. Further, the exposure device B exposes the pattern 2b' of the mask 2' to the substrate 1. In Fig. 8(b), the substrate 1 on which the chuck 10 on the right side is mounted, the pattern 2b' of the mask 2' is not exposed. In Fig. 8(b), the substrate 1 mounted on the chuck 10 on the left side in the drawing ends the exposure of the pattern 2b' of the mask 2'.
於圖8的(a),曝光裝置A,使用四個相機元件31中的圖中左側的兩個相機元件31,取得遮罩2的遮罩標記2a及基板1的基板標記1a的圖像。並且,曝光裝置A的控制裝置60,對應藉由圖像處理裝置30所檢測出的遮罩標記2a與基板標記1a的偏移量,藉由平台驅動電路50使X平台5及Y平台7移動,進行遮罩標記2a與基板標記1a的位置校準,而進行遮罩2與基板1的相對位置定位。曝光裝置A,結束遮罩標記2a與基板標記1a的位置校準時,藉由未圖示的移動機構,將各相機元件31自遮罩2的上方移開。作為移動機構,可使用例如日本特開2012-234021號公報所記載的相機元件移動機構。In (a) of FIG. 8, the exposure apparatus A acquires the mask mark 2a of the mask 2 and the board|substrate mark 1a of the board|substrate 1 using the two camera elements 31 of the left side of the four camera elements 31. Further, the control device 60 of the exposure device A moves the X platform 5 and the Y platform 7 by the platform driving circuit 50 in accordance with the offset amount of the mask mark 2a and the substrate mark 1a detected by the image processing device 30. The positional alignment of the mask mark 2a and the substrate mark 1a is performed, and the relative positional positioning of the mask 2 and the substrate 1 is performed. When the exposure apparatus A finishes the positional alignment of the mask mark 2a and the substrate mark 1a, each camera element 31 is removed from the upper side of the mask 2 by a moving mechanism (not shown). As the moving mechanism, for example, a camera element moving mechanism described in Japanese Laid-Open Patent Publication No. 2012-234021 can be used.
圖9係顯示曝光裝置A中,遮罩標記與基板標記的位置校準已結束的狀態下的遮罩及基板的位置的圖。如圖9所示,遮罩標記2a與基板標記1a的位置校準已結束的狀態下,各遮罩標記2a的中心與各基板標記1a的中心為一致。但是,此狀態下,遮罩2的圖樣2b的位置與基板1的曝光區域1b的位置並不一致。Fig. 9 is a view showing the positions of the mask and the substrate in a state where the positional calibration of the mask mark and the substrate mark is completed in the exposure apparatus A. As shown in FIG. 9, in the state where the position alignment of the mask mark 2a and the board|substrate mark 1a has completed, the center of each mask mark 2a and the center of each board|substrate mark 1a correspond. However, in this state, the position of the pattern 2b of the mask 2 does not coincide with the position of the exposure area 1b of the substrate 1.
曝光裝置A的控制裝置60,預先登錄有為了在遮罩標記2a與基板標記1a的位置校準結束後,使圖樣2b的位置與曝光區域1b的位置為一致所必須的基板1的向X方向及Y方向的移動量。此移動量,係對應於例如後述的TFT基板的曝光步驟中,於基板1上曝光的曝光區域1b的位置而決定。又對應於後述的彩色濾光片基板的黑底形成步驟的曝光處理中,於在與彩色濾光片基板貼合的TFT基板曝光的曝光區域1b的位置而決定。The control device 60 of the exposure apparatus A registers in advance the X direction of the substrate 1 necessary for the position of the pattern 2b to match the position of the exposure region 1b after the position alignment of the mask mark 2a and the substrate mark 1a is completed. The amount of movement in the Y direction. This amount of movement is determined in accordance with the position of the exposure region 1b exposed on the substrate 1 in the exposure step of, for example, a TFT substrate to be described later. Further, in the exposure processing corresponding to the black matrix forming step of the color filter substrate to be described later, the position of the exposure region 1b exposed to the TFT substrate bonded to the color filter substrate is determined.
曝光裝置A的控制裝置60,使用已登錄的移動量,基於雷射測量裝置40的檢測結果,藉由平台驅動電路50使X平台5及Y平台7移動,將基板1的單一個曝光區域1b的位置,校準於遮罩2的圖樣2b的位置。圖10係顯示將基板1的單一個曝光區域1b的位置校準於遮罩2的圖樣2b的位置的狀態下的遮罩2及基板1的位置的圖。曝光裝置A於此狀態進行遮罩2的圖樣2b的第一次的曝光。The control device 60 of the exposure device A uses the registered movement amount, and based on the detection result of the laser measurement device 40, the X platform 5 and the Y stage 7 are moved by the platform drive circuit 50 to separate the single exposure region 1b of the substrate 1. The position is calibrated to the position of the pattern 2b of the mask 2. FIG. 10 is a view showing the positions of the mask 2 and the substrate 1 in a state where the position of the single exposure region 1b of the substrate 1 is aligned to the position of the pattern 2b of the mask 2. The exposure device A performs the first exposure of the pattern 2b of the mask 2 in this state.
另外,此時曝光裝置A藉由未圖示的曝光用快門,覆蓋住遮罩2的遮罩標記2a的上方,使遮罩標記2a不被曝光於其他曝光區域。在曝光裝置A之後的曝光,亦為相同。作為曝光用快門,能夠使用例如日本特開2005-140936號公報所記載之物。Further, at this time, the exposure device A covers the upper surface of the mask mark 2a of the mask 2 by an exposure shutter (not shown), so that the mask mark 2a is not exposed to other exposure areas. The exposure after the exposure device A is also the same. As the shutter for exposure, for example, the article described in JP-A-2005-140936 can be used.
接著,曝光裝置A的控制裝置60,基於雷射測量裝置40的檢測結果,藉由平台驅動電路50使X平台5移動,將基板1的其他曝光區域1b的位置,校準於遮罩2的圖樣2b的位置。圖11係顯示將基板1的其他曝光區域1b的位置校準於遮罩2的圖樣2b的位置的狀態下的遮罩2及基板1的位置的圖。曝光裝置A在此狀態下進行遮罩2的圖樣2b的第二次的曝光。本實施形態,在第二次曝光,結束遮罩2的圖樣2b的曝光,基板1被搬運至曝光裝置B。Next, the control device 60 of the exposure device A moves the X stage 5 by the stage drive circuit 50 based on the detection result of the laser measuring device 40, and aligns the position of the other exposure region 1b of the substrate 1 to the pattern of the mask 2. 2b location. FIG. 11 is a view showing the positions of the mask 2 and the substrate 1 in a state where the position of the other exposure region 1b of the substrate 1 is aligned to the position of the pattern 2b of the mask 2. The exposure device A performs the second exposure of the pattern 2b of the mask 2 in this state. In the present embodiment, in the second exposure, the exposure of the pattern 2b of the mask 2 is completed, and the substrate 1 is transported to the exposure device B.
於圖8的(b),曝光裝置B,使用四個相機元件31中的圖中上側的兩個相機元件31,取得遮罩2’的遮罩標記2a’及基板1的基板標記1a的圖像。並且,曝光裝置B的控制裝置60,對應藉由圖像處理裝置30所檢測出的遮罩標記2a’與基板標記1a的偏移量,藉由平台驅動電路50使X平台5及Y平台7移動,進行遮罩標記2a’與基板標記1a的位置校準,而進行遮罩2’與基板1的相對位置定位。曝光裝置B,結束遮罩標記2a’與基板標記1a的位置校準時,藉由未圖示的移動機構,將各相機元件31自遮罩2’的上方移開。In (b) of FIG. 8, the exposure device B obtains the mask mark 2a' of the mask 2' and the substrate mark 1a of the substrate 1 using the two camera elements 31 on the upper side in the four camera elements 31. image. Further, the control device 60 of the exposure device B corresponds to the offset amount of the mask mark 2a' and the substrate mark 1a detected by the image processing device 30, and the X platform 5 and the Y platform 7 are driven by the platform drive circuit 50. Moving, the positional alignment of the mask mark 2a' and the substrate mark 1a is performed, and the relative positional positioning of the mask 2' and the substrate 1 is performed. When the exposure device B finishes the positional alignment of the mask mark 2a' and the substrate mark 1a, each camera element 31 is removed from the upper side of the mask 2' by a moving mechanism (not shown).
圖12係顯示曝光裝置B中,遮罩標記與基板標記的位置校準已結束的狀態下的遮罩及基板的位置的圖。如圖12所示,遮罩標記2a’與基板標記1a的位置校準已結束的狀態下,各遮罩標記2a’的中心分別與各基板標記1a的中心為一致。但是,此狀態下,遮罩2’的圖樣2b’的位置與基板1的曝光區域1b’的位置並不一致。Fig. 12 is a view showing the positions of the mask and the substrate in a state where the positional calibration of the mask mark and the substrate mark is completed in the exposure apparatus B. As shown in Fig. 12, in the state where the positional alignment of the mask mark 2a' and the substrate mark 1a is completed, the center of each mask mark 2a' coincides with the center of each substrate mark 1a. However, in this state, the position of the pattern 2b' of the mask 2' does not coincide with the position of the exposure area 1b' of the substrate 1.
在未進行藉由前述的標記裝置C的基板標記1a的曝光時,在此狀態下,曝光裝置B將與基板1的各基板標記1a的中心為一致的遮罩標記2a’及基板標記1a曝光於基板1。此時,曝光裝置B藉由未圖示的曝光用快門,覆蓋住遮罩2’的圖樣2b’及不曝光的其他遮罩標記2a’的上方,使這些不被曝光於基板1。When the exposure of the substrate mark 1a by the marking device C described above is not performed, in this state, the exposure device B exposes the mask mark 2a' and the substrate mark 1a which coincide with the center of each substrate mark 1a of the substrate 1. On the substrate 1. At this time, the exposure device B covers the pattern 2b' of the mask 2' and the other mask marks 2a' which are not exposed by the exposure shutter (not shown) so that these are not exposed to the substrate 1.
曝光裝置B的控制裝置60,預先登錄有為了在遮罩標記2a’與基板標記1a的位置校準結束後,使圖樣2b’的位置與曝光區域1b’的位置為一致所必須的,基板1的向X方向及Y方向的移動量。此移動量,係對應於例如後述的TFT基板的曝光步驟中,於基板1上曝光的曝光區域1b’的位置而決定。又對應於後述的彩色濾光片基板的黑底形成步驟的曝光處理中,於在與彩色濾光片基板貼合的TFT基板曝光的曝光區域1b’的位置而決定。The control device 60 of the exposure device B is preliminarily registered in order to match the position of the pattern 2b' with the position of the exposure region 1b' after the position of the mask mark 2a' and the substrate mark 1a is completed. The amount of movement in the X direction and the Y direction. This amount of movement is determined in accordance with the position of the exposure region 1b' exposed on the substrate 1 in the exposure step of, for example, a TFT substrate to be described later. Further, in the exposure processing corresponding to the black matrix forming step of the color filter substrate to be described later, the position of the exposure region 1b' exposed to the TFT substrate bonded to the color filter substrate is determined.
接著,曝光裝置A的控制裝置60,使用已登錄的移動量,基於雷射測量裝置40的檢測結果,藉由平台驅動電路50使X平台5及Y平台7移動,將基板1的曝光區域1b’的位置,校準於遮罩2’的圖樣2b’的位置。圖13係顯示將基板1的兩個曝光區域1b’的位置校準於遮罩2’的圖樣2b’的位置的狀態下的遮罩2’及基板1的位置的圖。曝光裝置B於此狀態進行遮罩2’的圖樣2b’的第一次的曝光。Next, the control device 60 of the exposure apparatus A uses the registered movement amount to move the X stage 5 and the Y stage 7 by the stage drive circuit 50 based on the detection result of the laser measurement apparatus 40, and exposes the exposure area 1b of the substrate 1. 'The position is calibrated to the position of the pattern 2b' of the mask 2'. Fig. 13 is a view showing the positions of the mask 2' and the substrate 1 in a state where the positions of the two exposure regions 1b' of the substrate 1 are aligned at the position of the pattern 2b' of the mask 2'. The exposure device B performs the first exposure of the pattern 2b' of the mask 2' in this state.
另外,此時曝光裝置B藉由未圖示的曝光用快門,覆蓋住遮罩2’的遮罩標記2a’的上方,使遮罩標記2a’不被曝光於其他曝光區域。在曝光裝置B之後的曝光,亦為相同。Further, at this time, the exposure device B covers the mask mark 2a' of the mask 2' by an exposure shutter (not shown) so that the mask mark 2a' is not exposed to other exposure regions. The exposure after exposure device B is also the same.
接著,曝光裝置B的控制裝置60,基於雷射測量裝置40的檢測結果,藉由平台驅動電路50使X平台5移動,將基板1的其他曝光區域1b’的位置,校準於遮罩2’的圖樣2b’的位置。圖14係顯示將基板1的其他兩個曝光區域1b’的位置校準於遮罩2’的兩個圖樣2b’的位置的狀態下的遮罩2’及基板1的位置的圖。曝光裝置B在此狀態下進行遮罩2’的圖樣2b’的第二次曝光。Next, the control device 60 of the exposure device B moves the X platform 5 by the platform driving circuit 50 based on the detection result of the laser measuring device 40, and aligns the position of the other exposure region 1b' of the substrate 1 to the mask 2'. The position of the pattern 2b'. Fig. 14 is a view showing the positions of the mask 2' and the substrate 1 in a state where the positions of the other two exposure regions 1b' of the substrate 1 are aligned to the positions of the two patterns 2b' of the mask 2'. The exposure device B performs the second exposure of the pattern 2b' of the mask 2' in this state.
接著,曝光裝置B的控制裝置60,基於雷射測量裝置40的檢測結果,藉由平台驅動電路50使Y平台7移動,將基板1的更另外一個的曝光區域1b’的位置,校準於遮罩2’的圖樣2b’的位置。圖15係顯示將基板1的其他單一個曝光區域1b’的位置校準於遮罩2’的單一個圖樣2b’的位置的狀態下的遮罩2’及基板1的位置的圖。曝光裝置B在此狀態下進行遮罩2’的圖樣2b’的第三次曝光。另外,此時曝光裝置B藉由未圖示的曝光用快門,覆蓋住遮罩2’的兩個圖樣2b’中,不使用於曝光的圖樣2b’(於圖15的例子中為上側的圖樣2b’)的上方,使曝光光線不穿過不使用於曝光的圖樣2b’。Next, the control device 60 of the exposure device B, based on the detection result of the laser measuring device 40, moves the Y stage 7 by the stage drive circuit 50, and aligns the position of the other exposed region 1b' of the substrate 1 to the cover. The position of the pattern 2b' of the cover 2'. Fig. 15 is a view showing the positions of the mask 2' and the substrate 1 in a state where the position of the other single exposure region 1b' of the substrate 1 is aligned to the position of the single pattern 2b' of the mask 2'. The exposure device B performs the third exposure of the pattern 2b' of the mask 2' in this state. Further, at this time, the exposure device B covers the two patterns 2b' of the mask 2' by an exposure shutter (not shown), and is not used for the exposed pattern 2b' (in the example of Fig. 15, the upper pattern) Above the 2b'), the exposure light is not passed through the pattern 2b' which is not used for exposure.
接著,曝光裝置B的控制裝置60,基於雷射測量裝置40的檢測結果,藉由平台驅動電路50使X平台5移動,將基板1的更另外一個的曝光區域1b’的位置,校準於遮罩2’的圖樣2b’的位置。圖16係顯示將基板1的更另外一個單一個曝光區域1b’的位置校準於遮罩2’的單一個圖樣2b’的位置的狀態下的遮罩2’及基板1的位置的圖。曝光裝置B在此狀態下進行遮罩2’的圖樣2b’的第四次曝光。另外,此時曝光裝置B藉由未圖示的曝光用快門,覆蓋住遮罩2’的兩個圖樣2b’中,不使用於曝光的圖樣2b’(於圖16的例子中為上側的圖樣2b’)的上方,使曝光光線不穿過不使用於曝光的圖樣2b’。本實施形態中,於第四次的曝光,結束遮罩2’的圖樣2b’的曝光。藉由以上一連串的動作,進行基板1整體的曝光。Next, the control device 60 of the exposure device B, based on the detection result of the laser measuring device 40, moves the X stage 5 by the stage driving circuit 50, and aligns the position of the other exposed region 1b' of the substrate 1 to the cover. The position of the pattern 2b' of the cover 2'. Fig. 16 is a view showing the positions of the mask 2' and the substrate 1 in a state where the position of the other single exposure region 1b' of the substrate 1 is aligned to the position of the single pattern 2b' of the mask 2'. The exposure device B performs the fourth exposure of the pattern 2b' of the mask 2' in this state. Further, at this time, the exposure device B covers the two patterns 2b' of the mask 2' by an exposure shutter (not shown), and is not used for the exposed pattern 2b' (in the example of Fig. 16, the upper pattern) Above the 2b'), the exposure light is not passed through the pattern 2b' which is not used for exposure. In the present embodiment, the exposure of the pattern 2b' of the mask 2' is ended in the fourth exposure. The entire substrate 1 is exposed by the above series of operations.
(第二實施形態) 圖17係顯示使用於本發明的第二實施形態,於短邊方向形成有兩個基板標記的基板之一例的圖。圖17所顯示的例子係圖5所示的遮罩2的四個遮罩標記2a中,對應上側的兩個遮罩標記2a,設置兩個基板標記1a。遮罩標記2a、2a’及基板標記1a,當兩者的中心位置為一致時,成為不會互相重合的形狀。於圖17中,遮罩2的圖樣2b的曝光區域1b,及遮罩2’的圖樣2b’的曝光區域1b’於基板1上以例如虛線所示而配置。(Second Embodiment) Fig. 17 is a view showing an example of a substrate in which two substrate marks are formed in the short-side direction in the second embodiment of the present invention. In the example shown in Fig. 17, among the four mask marks 2a of the mask 2 shown in Fig. 5, two mask marks 1a are provided corresponding to the two mask marks 2a on the upper side. The mask marks 2a and 2a' and the substrate mark 1a have a shape in which they do not overlap each other when the center positions of the two are aligned. In Fig. 17, the exposed region 1b of the pattern 2b of the mask 2 and the exposed region 1b' of the pattern 2b' of the mask 2' are arranged on the substrate 1 as indicated by a broken line.
圖18係顯示本發明的第二實施形態中的顯示於圖17的基板於夾盤上的方向的圖。圖18的(a)顯示曝光裝置A,圖18的(b)顯示曝光裝置B。本實施形態中,圖18的(a)所示的曝光裝置A,將於短邊方向形成有兩個基板標記1a的圖17的基板1,以縱向的狀態搭載於各夾盤10。並且,曝光裝置A,使用四個相機元件31中的圖中上側的兩個相機元件31,取得遮罩2的遮罩標記2a及基板1的基板標記1a的圖像,而進行遮罩標記2a與基板標記1a的位置校準。使用雷射測量裝置40,將基板1的曝光區域1b的位置校準於遮罩2的圖樣2b的位置的動作,與第一實施型態的動作相同。Fig. 18 is a view showing a direction of the substrate shown in Fig. 17 on the chuck in the second embodiment of the present invention. (a) of FIG. 18 shows the exposure device A, and (b) of FIG. 18 shows the exposure device B. In the exposure apparatus A shown in FIG. 18(a), the substrate 1 of FIG. 17 in which the two substrate marks 1a are formed in the short-side direction is mounted on each of the chucks 10 in the vertical direction. Further, the exposure device A acquires the image of the mask mark 2a of the mask 2 and the substrate mark 1a of the substrate 1 by using the two camera elements 31 on the upper side in the four camera elements 31, and performs the mask mark 2a. Calibration with the position of the substrate mark 1a. The operation of aligning the position of the exposure region 1b of the substrate 1 to the position of the pattern 2b of the mask 2 by the laser measuring device 40 is the same as the operation of the first embodiment.
另一方面,圖18的(b)所示的曝光裝置B,將於短邊方向形成有兩個基板標記1a的圖17的基板1,以橫向搭載於各夾盤10。並且,曝光裝置B,使用四個相機元件31中的圖中左側的兩個相機元件31,取得遮罩2’的遮罩標記2a’及基板1的基板標記1a的圖像,而進行遮罩標記2a’與基板標記1a的位置校準。使用雷射測量裝置40,將基板1的曝光區域1b’的位置校準於遮罩2’的圖樣2b’的位置的動作,與第一實施型態的動作相同。On the other hand, in the exposure apparatus B shown in FIG. 18(b), the substrate 1 of FIG. 17 in which the two substrate marks 1a are formed in the short-side direction is mounted on each of the chucks 10 in the lateral direction. Further, the exposure device B obtains an image of the mask mark 2a' of the mask 2' and the substrate mark 1a of the substrate 1 by using the two camera elements 31 on the left side of the four camera elements 31, and performs masking. The position of the mark 2a' is aligned with the position of the substrate mark 1a. The operation of aligning the position of the exposure region 1b' of the substrate 1 to the position of the pattern 2b' of the mask 2' by the laser measuring device 40 is the same as that of the first embodiment.
以上所說明的第一實施型態及第二實施型態中,由於藉由標記裝置C,於經塗佈於基板1的光阻以指定的間隔形成基板標記1a,因此與設置對位標記專用的曝光裝置時相比,設備費用及運作成本大幅削減。並且,於複數個曝光裝置A、B,分別檢測出遮罩2、2’的遮罩標記2a、2a’與基板1a的偏移量,對應所檢測出的遮罩標記2a、2a’與基板標記1a的偏移量,移動平台,進行遮罩標記2a、2a’與基板標記1a的位置校準,而進行遮罩2、2’與基板1的相對位置定位,因此即使將基板1自一個曝光裝置A移動至其他的曝光裝置B,亦能夠維持遮罩2、2’與基板1的相對位置,高精度地維持以各曝光裝置A、B所曝光的圖樣2b、2b’彼此的位置。又於複數個曝光裝置A、B,分別使用雷射測量裝置40,檢測出平台的位置,遮罩標記2a、2a’與基板標記1a的位置校準結束後,基於雷射測量裝置40的檢測結果,移動平台,控制圖樣2b、2b’於基板1被曝光的位置後,於基板1進行圖樣2b、2b’的曝光,將彼此尺寸相異的圖樣2b、2b’於基板1曝光,因此能夠將各尺寸的圖樣2b、2b’於期望的位置高精度地曝光。因此,不大幅增加設備或步驟,於單片基板1將尺寸相異的圖樣2b、2b’以高位置精度曝光。In the first embodiment and the second embodiment described above, since the substrate mark 1a is formed at a predetermined interval by the marking device C, the photoresist applied to the substrate 1 is used, and therefore, the alignment mark is dedicated. Compared with the exposure device, the equipment cost and operating cost are greatly reduced. Further, in a plurality of exposure apparatuses A and B, the offset amounts of the mask marks 2a and 2a' of the masks 2 and 2' and the substrate 1a are detected, respectively, corresponding to the detected mask marks 2a and 2a' and the substrate. Marking the offset of the mark 1a, moving the platform, performing positional alignment of the mask marks 2a, 2a' and the substrate mark 1a, and positioning the relative positions of the masks 2, 2' and the substrate 1, so that even if the substrate 1 is exposed from one exposure When the apparatus A is moved to another exposure apparatus B, the relative positions of the masks 2, 2' and the substrate 1 can be maintained, and the positions of the patterns 2b and 2b' exposed by the respective exposure apparatuses A and B can be maintained with high precision. Further, the laser measuring device 40 detects the position of the platform in the plurality of exposure devices A and B, and the detection result of the laser measuring device 40 is determined after the position calibration of the mask marks 2a, 2a' and the substrate mark 1a is completed. After the mobile platform controls the patterns 2b and 2b' at the position where the substrate 1 is exposed, the patterns 2b and 2b' are exposed on the substrate 1, and the patterns 2b and 2b' having different sizes are exposed on the substrate 1. The patterns 2b, 2b' of the respective sizes are exposed with high precision at a desired position. Therefore, the patterns 2b, 2b' having different sizes are exposed on the single-piece substrate 1 with high positional accuracy without greatly increasing the equipment or steps.
〔實施型態的效果〕 依據以上所說明的實施型態,能達成以下效果。 (1)能夠不大幅增加設備或步驟,於單片基板1將尺寸相異的圖樣2b、2b’以高位置精度曝光。[Effect of the embodiment] According to the embodiment described above, the following effects can be achieved. (1) It is possible to expose the patterns 2b, 2b' having different sizes on the single-piece substrate 1 with high positional accuracy without greatly increasing the number of devices or steps.
(2)進一步,於遮罩2、2’的方向,分別形成兩個以上的遮罩標記2a、2a’,於長方形的基板1的長邊方向或短邊方向形成兩個以上的基板標記1a,藉此讓使用標記裝置C於基板1形成的基板標記1a為少量即可。並且,於複數個曝光裝置A、B中,將基板1以縱向或橫向搭載於夾盤10,藉此將配置於基板1上的長方形的曝光區域1b、1b’,對應於其縱橫的方向被曝光。(2) Further, two or more mask marks 2a and 2a' are formed in the directions of the masks 2 and 2', and two or more substrate marks 1a are formed in the longitudinal direction or the short side direction of the rectangular substrate 1. Thereby, the substrate mark 1a formed on the substrate 1 by the marking device C may be made small. Further, in the plurality of exposure apparatuses A and B, the substrate 1 is mounted on the chuck 10 in the longitudinal direction or the lateral direction, whereby the rectangular exposure regions 1b and 1b' disposed on the substrate 1 are corresponding to the longitudinal and lateral directions thereof. exposure.
(3)進一步,複數個曝光裝置A、B中的至少一個,基於雷射測量裝置40的檢測結果,進行複數次X平台5或Y平台7的移動,而複數次進行圖樣2b、2b’的曝光於基板1藉此能夠將多量配置有尺寸相對小的相同圖樣2b、2b’的表面利用效率良好的基板1予以有效率地曝光。(3) Further, at least one of the plurality of exposure devices A and B performs a plurality of movements of the X platform 5 or the Y platform 7 based on the detection result of the laser measuring device 40, and performs the pattern 2b, 2b' in plural times. By exposure to the substrate 1 , a large number of surfaces of the same pattern 2b, 2b' having a relatively small size can be efficiently exposed by the substrate 1 having good efficiency.
(4)進一步,於標記裝置C設置曝光元件75,自曝光元件75對基板標記1a的周圍照射曝光光線而將基板標記1a曝光,藉此於基板1形成基板標記1a,並且確認基板標記1a的存在,藉此辨認出實施有本發明。(4) Further, the exposure device 75 is provided on the marking device C, and the exposure light is irradiated from the exposure member 75 to the periphery of the substrate mark 1a to expose the substrate mark 1a, whereby the substrate mark 1a is formed on the substrate 1, and the substrate mark 1a is confirmed. Existence, thereby recognizing that the present invention is implemented.
(5)或者,於最後進行曝光的曝光裝置B中,在進行遮罩標記2a’與基板標記1a的位置校準後,將遮罩標記2a’及基板標記1a曝光於基板1,藉此於基板1形成遮罩標記2a’及基板標記1a,並且確認遮罩標記2a’及基板標記1a的存在,藉此辨認出實施有本發明。(5) Alternatively, after performing the positional alignment of the mask mark 2a' and the substrate mark 1a in the exposure apparatus B that is finally exposed, the mask mark 2a' and the substrate mark 1a are exposed on the substrate 1, whereby the substrate is exposed. 1 The mask mark 2a' and the substrate mark 1a are formed, and the presence of the mask mark 2a' and the substrate mark 1a is confirmed, whereby the present invention is recognized.
〔顯示用面板基板的製造方法〕 使用本發明的曝光系統進行基板的曝光,或者是使用本發明的曝光系統進行基板的曝光時,自標記裝置的曝光元件對基板標記周圍照射曝光光線,將基板標記曝光,則於切割成各顯示用面板前的顯示用面板基板形成基板標記。所形成的基板標記位置,與習知的各曝光區域的對位標記的位置,有明顯的差異,因此,藉由確認基板標記的存在,能夠辨認出基板係為使用本發明的曝光系統或曝光裝置所製造。[Manufacturing Method of Panel Substrate for Display] When exposure of a substrate is performed by using the exposure system of the present invention, or exposure of a substrate is performed using the exposure system of the present invention, exposure light is irradiated from the exposure element of the marking device to the periphery of the substrate mark, and the substrate is irradiated. When the mark is exposed, the substrate mark is formed on the display panel substrate before being cut into the display panels. The position of the substrate mark formed is significantly different from the position of the alignment mark of each of the conventional exposure regions. Therefore, by confirming the presence of the substrate mark, it is possible to recognize that the substrate is exposed or exposed using the present invention. Made by the device.
或是,於複數個曝光裝置中最後進行曝光的曝光裝置,在進行遮罩標記與基板標記的位置校準後,將遮罩標記及基板標記於基板曝光,則於切割成各顯示用面板前的顯示用面板基板形成遮罩標記基板標記。因此,藉由確認這些遮罩標記及基板標記的存在,能夠辨認出基板係為使用本發明的曝光系統或曝光裝置所製造。Or, in the exposure device that is finally exposed to the plurality of exposure devices, after the position of the mask mark and the substrate mark is calibrated, the mask mark and the substrate mark are exposed on the substrate, and then the front surface of each display panel is cut. The display panel substrate forms a mask mark substrate mark. Therefore, by confirming the presence of these mask marks and substrate marks, it is possible to recognize that the substrate is manufactured using the exposure system or the exposure apparatus of the present invention.
使用本發明的曝光系統進行基板的曝光,或是使用本發明的曝光方法進行基板的曝光,藉此能夠以高位置精度將尺寸相異的圖樣曝光於單片的基板,因此能夠高精度地製造表面利用效率良好的顯示用面板。By exposure of the substrate by the exposure system of the present invention or exposure of the substrate by the exposure method of the present invention, it is possible to expose a pattern having a different size to a single substrate with high positional accuracy, and thus it is possible to manufacture with high precision. A display panel with a good surface utilization efficiency.
例如圖19係顯示液晶顯示裝置的TFT基板的製造步驟之一例的流程圖。於薄膜形成步驟(步驟101)中,藉由濺鍍法及電漿化學氣相成長法(CVD)等,於基板上形成成為驅動液晶用的透明電極的導電體膜及絕緣體膜等的薄膜。於電阻塗佈步驟(步驟102)中,藉由狹縫塗佈法等塗佈感光樹脂材料(光阻),於薄膜形成步驟(步驟101)所形成的薄膜上形成光阻膜。於曝光步驟(步驟103)中,使用近接曝光裝置或投影曝光裝置,將遮罩的圖樣轉印至光阻膜。於顯影步驟(步驟104)中,藉由噴灑顯影法等將顯影液供給於光阻膜上,除去光阻膜不必要的部分。於蝕刻步驟(步驟105)中,藉由濕式蝕刻,將薄膜形成步驟(步驟101)所形成的薄膜中,未以光阻膜遮蔽的部分除去。於剝離步驟(步驟106)中,將結束於蝕刻步驟(步驟105)中的遮罩的作用的光阻膜,藉由剝離液剝離。這些各步驟之前或之後,應需求實施基板的洗淨/乾燥步驟。將這些步驟反覆進行數次,於基板上形成TFT陣列。For example, FIG. 19 is a flowchart showing an example of a manufacturing procedure of a TFT substrate of a liquid crystal display device. In the film forming step (step 101), a film such as a conductor film or an insulator film that serves as a transparent electrode for driving a liquid crystal is formed on the substrate by a sputtering method or a plasma chemical vapor deposition (CVD) method. In the resistance coating step (step 102), a photosensitive resin material (photoresist) is applied by a slit coating method or the like to form a photoresist film on the film formed in the film forming step (step 101). In the exposure step (step 103), the pattern of the mask is transferred to the photoresist film using a proximity exposure device or a projection exposure device. In the developing step (step 104), the developer is supplied onto the photoresist film by a spray development method or the like to remove unnecessary portions of the photoresist film. In the etching step (step 105), the portion of the film formed in the film forming step (step 101) which is not shielded by the photoresist film is removed by wet etching. In the stripping step (step 106), the photoresist film that has completed the action of the mask in the etching step (step 105) is peeled off by the stripper. The washing/drying step of the substrate should be carried out before or after these steps. These steps were repeated several times to form a TFT array on the substrate.
又圖20係顯示液晶顯示裝置的彩色濾光片基板的製造步驟之一例的流程圖。於黑底形成步驟(步驟201)中,藉由光阻塗佈、曝光、顯影、蝕刻及剝離等的處理,於基板上形成黑底。於著色圖樣形成步驟(步驟202)中,藉由染色法、顏料分散法、印刷法及電鍍法等,於基板上形成著色圖樣。將此步驟依據R、G、B的著色圖樣而重複進行。於保護膜形成步驟(步驟203)中,於著色圖樣之上形成保護膜,於透明電極膜形成步驟(步驟204)中,於保護膜之上形成透明電極膜。這些各步驟之前,途中及之後,應需求實施基板的洗淨/乾燥步驟。FIG. 20 is a flowchart showing an example of a manufacturing procedure of a color filter substrate of a liquid crystal display device. In the black matrix forming step (step 201), a black matrix is formed on the substrate by a process such as photoresist coating, exposure, development, etching, and lift-off. In the coloring pattern forming step (step 202), a coloring pattern is formed on the substrate by a dyeing method, a pigment dispersion method, a printing method, a plating method, or the like. This step is repeated in accordance with the coloring patterns of R, G, and B. In the protective film forming step (step 203), a protective film is formed over the colored pattern, and in the transparent electrode film forming step (step 204), a transparent electrode film is formed over the protective film. Before and after these steps, the substrate cleaning/drying step is required during and after the process.
於圖19所示的TFT基板的製造步驟中,於曝光步驟(步驟103)能夠運用本發明的曝光系統或曝光方法,於圖20所示的彩色濾光片基板的製造步驟中,於黑底形成步驟(步驟201)能夠運用本發明的曝光系統或曝光方法。又,本發明的曝光系統或曝光方法,亦能夠運用於具有與液晶顯示裝置的TFT基板的製造步驟相同步驟的印刷基板等其他基板的曝光步驟。In the manufacturing step of the TFT substrate shown in FIG. 19, the exposure system or the exposure method of the present invention can be applied in the exposure step (step 103), in the manufacturing step of the color filter substrate shown in FIG. 20, on the black matrix. The forming step (step 201) can utilize the exposure system or exposure method of the present invention. Further, the exposure system or the exposure method of the present invention can be applied to an exposure step of another substrate such as a printed circuit board having the same steps as those of the TFT substrate of the liquid crystal display device.
A、B‧‧‧曝光裝置A, B‧‧‧ exposure device
C‧‧‧標記裝置C‧‧‧ marking device
1‧‧‧基板1‧‧‧Substrate
1a‧‧‧基板標記1a‧‧‧Substrate marking
1b、1b’‧‧‧曝光區域1b, 1b’‧‧‧ exposed areas
2、2’‧‧‧遮罩2, 2'‧‧‧ mask
2a、2a’‧‧‧遮罩標記2a, 2a’‧‧‧ mask marks
2b、2b’‧‧‧圖樣2b, 2b’‧‧‧ pattern
3‧‧‧基底3‧‧‧Base
4‧‧‧X導件4‧‧‧X guide
5‧‧‧X平台5‧‧‧X platform
6‧‧‧Y導件6‧‧‧Y guide
7‧‧‧Y平台7‧‧‧Y platform
8‧‧‧θ平台8‧‧ θ platform
9‧‧‧夾盤支承台9‧‧‧Chuck support table
10‧‧‧夾盤10‧‧‧ chuck
20‧‧‧遮罩架20‧‧‧Mask rack
30‧‧‧圖像處理裝置30‧‧‧Image processing device
31‧‧‧相機元件31‧‧‧ camera components
40‧‧‧雷射測量裝置40‧‧‧Laser measuring device
50‧‧‧平台驅動電路50‧‧‧ platform drive circuit
60‧‧‧主控裝置60‧‧‧Master control unit
70‧‧‧架台70‧‧‧ 台台
71‧‧‧桌台71‧‧‧Table
71a‧‧‧窗口71a‧‧‧ window
72‧‧‧雷射標記器72‧‧‧Laser marker
73‧‧‧標記器驅動電路73‧‧‧Marker drive circuit
74‧‧‧標記器移動裝置74‧‧‧Marker mobile device
75‧‧‧曝光元件75‧‧‧Exposure components
圖1係顯示根據本發明的一實施形態的曝光系統的示意構成的圖。 圖2的(a)係顯示曝光裝置A的俯視圖,圖2的(b)係顯示曝光裝置A的側視圖。 圖3的(a)係顯示曝光裝置B的俯視圖,圖3的(b)係顯示曝光裝置B的側視圖。 圖4係顯示標記裝置的構成例的圖。 圖5係顯示使用於曝光裝置A的遮罩之一例的圖。 圖6係顯示使用於曝光裝置B的遮罩之一例的圖。 圖7係顯示使用於本發明的第一實施形態,於長邊方向形成有兩個基板標記的基板之一例的圖。 圖8係顯示本發明的第一實施形態中的顯示於圖7的基板於夾盤上的方向的圖。 圖9係顯示曝光裝置A中,遮罩標記與基板標記的位置校準已結束的狀態下的遮罩及基板的位置的圖。 圖10係顯示將基板的單一個曝光區域的位置校準於遮罩的圖樣的位置的狀態下的遮罩及基板的位置的圖。 圖11係顯示將基板的其他曝光區域的位置校準於遮罩的圖樣的位置的狀態下的遮罩及基板的位置的圖。 圖12係顯示於曝光裝置B中,遮罩標記與基板標記的位置校準已結束的狀態下的遮罩及基板的位置的圖。 圖13係顯示將基板的兩個曝光區域的位置校準於遮罩的兩個圖樣的位置的狀態下的遮罩及基板的位置的圖。 圖14係顯示將基板的其他的兩個曝光區域的位置校準於遮罩的兩個圖樣的位置的狀態下的遮罩及基板的位置的圖。 圖15係顯示將基板的其他的單一個曝光區域的位置校準於遮罩的一個圖樣的位置的狀態下的遮罩及基板的位置的圖。 圖16係顯示將基板的更另外一個的單一個曝光區域的位置校準於遮罩的一個圖樣的位置的狀態下的遮罩及基板的位置的圖。 圖17係顯示使用於本發明的第二實施形態,於短邊方向形成有兩個基板標記的基板之一例的圖。 圖18係顯示本發明的第二實施形態中的顯示於圖17的基板於夾盤上的方向的圖。 圖19係顯示液晶顯示裝置的TFT基板的製造步驟之一例的流程圖。 圖20係顯示液晶顯示裝置的彩色濾光片基板的製造步驟之一例的流程圖。Fig. 1 is a view showing a schematic configuration of an exposure system according to an embodiment of the present invention. Fig. 2(a) is a plan view showing the exposure device A, and Fig. 2(b) is a side view showing the exposure device A. Fig. 3(a) is a plan view showing the exposure device B, and Fig. 3(b) is a side view showing the exposure device B. Fig. 4 is a view showing a configuration example of a marking device. Fig. 5 is a view showing an example of a mask used in the exposure device A. Fig. 6 is a view showing an example of a mask used in the exposure device B. Fig. 7 is a view showing an example of a substrate in which two substrate marks are formed in the longitudinal direction in the first embodiment of the present invention. Fig. 8 is a view showing a direction of the substrate shown in Fig. 7 on the chuck in the first embodiment of the present invention. Fig. 9 is a view showing the positions of the mask and the substrate in a state where the positional calibration of the mask mark and the substrate mark is completed in the exposure apparatus A. Fig. 10 is a view showing the positions of the mask and the substrate in a state where the position of the single exposure region of the substrate is aligned to the position of the pattern of the mask. Fig. 11 is a view showing the positions of the mask and the substrate in a state where the position of the other exposed region of the substrate is aligned to the position of the pattern of the mask. Fig. 12 is a view showing the positions of the mask and the substrate in a state where the positional calibration of the mask mark and the substrate mark is completed in the exposure device B. Fig. 13 is a view showing the positions of the mask and the substrate in a state where the positions of the two exposure regions of the substrate are aligned to the positions of the two patterns of the mask. Fig. 14 is a view showing the positions of the mask and the substrate in a state where the positions of the other two exposure regions of the substrate are aligned to the positions of the two patterns of the mask. Fig. 15 is a view showing the positions of the mask and the substrate in a state where the position of the other single exposure region of the substrate is aligned to the position of one pattern of the mask. Fig. 16 is a view showing the positions of the mask and the substrate in a state where the position of the other one exposed area of the substrate is aligned to the position of one pattern of the mask. Fig. 17 is a view showing an example of a substrate in which two substrate marks are formed in the short-side direction in the second embodiment of the present invention. Fig. 18 is a view showing a direction of the substrate shown in Fig. 17 on the chuck in the second embodiment of the present invention. 19 is a flow chart showing an example of a manufacturing procedure of a TFT substrate of a liquid crystal display device. Fig. 20 is a flow chart showing an example of a manufacturing procedure of a color filter substrate of a liquid crystal display device.
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