TW201842146A - 研磨用組成物 - Google Patents
研磨用組成物 Download PDFInfo
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- TW201842146A TW201842146A TW107109978A TW107109978A TW201842146A TW 201842146 A TW201842146 A TW 201842146A TW 107109978 A TW107109978 A TW 107109978A TW 107109978 A TW107109978 A TW 107109978A TW 201842146 A TW201842146 A TW 201842146A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- polished
- polishing composition
- acid
- metal salt
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 284
- 239000000203 mixture Substances 0.000 title claims abstract description 114
- 150000003839 salts Chemical class 0.000 claims abstract description 58
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 42
- 239000007800 oxidant agent Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000006061 abrasive grain Substances 0.000 claims abstract description 26
- -1 alkali metal salts Chemical class 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 5
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 27
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 26
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 24
- 239000000470 constituent Substances 0.000 claims description 9
- 235000002639 sodium chloride Nutrition 0.000 description 67
- 239000007788 liquid Substances 0.000 description 28
- 238000000227 grinding Methods 0.000 description 23
- 239000002253 acid Substances 0.000 description 19
- 230000007547 defect Effects 0.000 description 16
- 238000011156 evaluation Methods 0.000 description 14
- 150000007513 acids Chemical class 0.000 description 13
- 239000002245 particle Substances 0.000 description 11
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical class [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 229910003460 diamond Inorganic materials 0.000 description 9
- 239000010432 diamond Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000000877 morphologic effect Effects 0.000 description 6
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 6
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical class [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 description 6
- 239000011575 calcium Substances 0.000 description 5
- 229910052700 potassium Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000001110 calcium chloride Substances 0.000 description 4
- 229910001628 calcium chloride Inorganic materials 0.000 description 4
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229910002651 NO3 Inorganic materials 0.000 description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 3
- 150000001805 chlorine compounds Chemical class 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000002552 dosage form Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000004323 potassium nitrate Substances 0.000 description 3
- 235000010333 potassium nitrate Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910001631 strontium chloride Inorganic materials 0.000 description 3
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 208000032544 Cicatrix Diseases 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical class [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000001103 potassium chloride Substances 0.000 description 2
- 235000011164 potassium chloride Nutrition 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 239000012286 potassium permanganate Substances 0.000 description 2
- 231100000241 scar Toxicity 0.000 description 2
- 230000037387 scars Effects 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000004317 sodium nitrate Substances 0.000 description 2
- 235000010344 sodium nitrate Nutrition 0.000 description 2
- JQWHASGSAFIOCM-UHFFFAOYSA-M sodium periodate Chemical compound [Na+].[O-]I(=O)(=O)=O JQWHASGSAFIOCM-UHFFFAOYSA-M 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- UBXAKNTVXQMEAG-UHFFFAOYSA-L strontium sulfate Chemical compound [Sr+2].[O-]S([O-])(=O)=O UBXAKNTVXQMEAG-UHFFFAOYSA-L 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- QLOKJRIVRGCVIM-UHFFFAOYSA-N 1-[(4-methylsulfanylphenyl)methyl]piperazine Chemical compound C1=CC(SC)=CC=C1CN1CCNCC1 QLOKJRIVRGCVIM-UHFFFAOYSA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QSHYGLAZPRJAEZ-UHFFFAOYSA-N 4-(chloromethyl)-2-(2-methylphenyl)-1,3-thiazole Chemical compound CC1=CC=CC=C1C1=NC(CCl)=CS1 QSHYGLAZPRJAEZ-UHFFFAOYSA-N 0.000 description 1
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical class [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- QLZHNIAADXEJJP-UHFFFAOYSA-N Phenylphosphonic acid Chemical compound OP(O)(=O)C1=CC=CC=C1 QLZHNIAADXEJJP-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000004153 Potassium bromate Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 1
- 239000011609 ammonium molybdate Substances 0.000 description 1
- 235000018660 ammonium molybdate Nutrition 0.000 description 1
- 229940010552 ammonium molybdate Drugs 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- VSGNNIFQASZAOI-UHFFFAOYSA-L calcium acetate Chemical compound [Ca+2].CC([O-])=O.CC([O-])=O VSGNNIFQASZAOI-UHFFFAOYSA-L 0.000 description 1
- 239000001639 calcium acetate Substances 0.000 description 1
- 235000011092 calcium acetate Nutrition 0.000 description 1
- 229960005147 calcium acetate Drugs 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 235000011132 calcium sulphate Nutrition 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- ZJXZSIYSNXKHEA-UHFFFAOYSA-N ethyl dihydrogen phosphate Chemical compound CCOP(O)(O)=O ZJXZSIYSNXKHEA-UHFFFAOYSA-N 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QWARLPGIFZKIQW-UHFFFAOYSA-N hydrogen peroxide;nitric acid Chemical class OO.O[N+]([O-])=O QWARLPGIFZKIQW-UHFFFAOYSA-N 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002497 iodine compounds Chemical class 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910000462 iron(III) oxide hydroxide Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- YACKEPLHDIMKIO-UHFFFAOYSA-N methylphosphonic acid Chemical compound CP(O)(O)=O YACKEPLHDIMKIO-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- LFLZOWIFJOBEPN-UHFFFAOYSA-N nitrate, nitrate Chemical class O[N+]([O-])=O.O[N+]([O-])=O LFLZOWIFJOBEPN-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical class [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 229940094037 potassium bromate Drugs 0.000 description 1
- 235000019396 potassium bromate Nutrition 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- UMPKMCDVBZFQOK-UHFFFAOYSA-N potassium;iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[K+].[Fe+3] UMPKMCDVBZFQOK-UHFFFAOYSA-N 0.000 description 1
- BQFYGYJPBUKISI-UHFFFAOYSA-N potassium;oxido(dioxo)vanadium Chemical compound [K+].[O-][V](=O)=O BQFYGYJPBUKISI-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- CMZUMMUJMWNLFH-UHFFFAOYSA-N sodium metavanadate Chemical compound [Na+].[O-][V](=O)=O CMZUMMUJMWNLFH-UHFFFAOYSA-N 0.000 description 1
- 239000011684 sodium molybdate Substances 0.000 description 1
- 235000015393 sodium molybdate Nutrition 0.000 description 1
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- RXSHXLOMRZJCLB-UHFFFAOYSA-L strontium;diacetate Chemical compound [Sr+2].CC([O-])=O.CC([O-])=O RXSHXLOMRZJCLB-UHFFFAOYSA-L 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- GMXJWMUWQYWCKI-UHFFFAOYSA-N sulfoperoxy hydrogen sulfate Chemical compound OS(=O)(=O)OOOS(O)(=O)=O GMXJWMUWQYWCKI-UHFFFAOYSA-N 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/24—Acids; Salts thereof
- C08K3/26—Carbonates; Bicarbonates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/14—Peroxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/24—Acids; Salts thereof
- C08K3/26—Carbonates; Bicarbonates
- C08K2003/262—Alkali metal carbonates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本發明提供一種研磨用組成物,其能有效果地提高研磨速率。依照本發明,提供一種將研磨對象材料予以研磨用之研磨用組成物。此研磨用組成物包含水、氧化劑與研磨促進劑,且不含研磨粒。作為研磨促進劑,包含選自由鹼金屬鹽及鹼土類金屬鹽所成之群組的至少1種金屬鹽。
Description
本發明關於研磨用組成物。詳細而言,關於研磨對象材料之研磨中所用的研磨用組成物。本申請案係以2017年3月23日申請的日本發明專利申請案2017-57610號為基礎,主張優先權,該申請案的全部內容係在本說明書中作為參照而併入。
鑽石、藍寶石(氧化鋁)、碳化矽、碳化硼、碳化鎢、氮化矽、氮化鈦等之研磨對象材料的表面,通常係藉由對於研磨壓盤供給鑽石研磨粒,進行研磨(lapping)而被加工。然而,於使用鑽石研磨粒的研磨中,由於刮痕的發生、殘存等,容易發生缺陷或變形。因此,檢討在使用鑽石研磨粒的研磨後,或代替該研磨,使用研磨墊,於該研磨墊與研磨對象物之間供給研磨漿料,進行研磨(拋光)。作為揭示此種的習知技術之文獻,可舉出專利文獻1~3。 先前技術文獻 專利文獻
專利文獻1:國際公開第2013/051555號 專利文獻2:日本發明專利申請案公開2011-159998號公報 專利文獻3:日本發明專利申請案公開2012-253259號公報
發明所欲解決的問題
近年來,關於碳化矽等之研磨對象物表面的拋光中所用之研磨用組成物,從減低刮痕等的凹窪缺陷及以形態(morphology)觀察所無法檢測出的潛在傷痕等之觀點來看,要求儘量不使用研磨粒。然而,若不使用研磨粒,則有研磨速率(每單位時間去除研磨對象物的表面之量)降低之問題。關於此點,上述專利文獻1提案在不含研磨粒的研磨用組成物中,藉由在氧化劑等之含有成分下工夫,而改善研磨速率。然而,即使藉由如此的技術,也不充分滿足與研磨速率有關的實用之要求水準,還有改善之餘地。
本發明係鑒於上述的情況而完成者。其主要目的在於提供一種研磨用組成物,其係在研磨對象物之研磨中有效果地提高研磨速率,能減低刮痕等的凹窪缺陷及以形態觀察所無法檢測出的潛在傷痕。關聯的其他目的係在於提供一種使用上述研磨用組成物來將研磨對象物予以研磨之方法。 解決問題的手段
又,依照本發明,提供一種在研磨對象物之研磨中所用的研磨用組成物。此研磨用組成物包含水、氧化劑與研磨促進劑,且不含研磨粒。作為前述研磨促進劑,包含選自由鹼金屬鹽及鹼土類金屬鹽所成之群組的至少1種金屬鹽。作為如此的研磨促進劑,藉由使用包含鹼金屬鹽及/或鹼土類金屬鹽的研磨用組成物,可在不含研磨粒的研磨用組成物中,大幅提高研磨速率。
於此處所揭示的研磨用組成物之較佳一態樣中,pH為5.5以上。於pH在上述範圍之研磨用組成物中,可更適宜地發揮本發明之應用效果。
於此處所揭示的研磨用組成物之較佳一態樣中,前述研磨用組成物中之前述金屬鹽的濃度C1[莫耳/升]與前述氧化劑的濃度C2[莫耳/升]之比(C1/C2)為0.001~70之範圍內。藉由以成為特定的濃度比之方式組合使用上述研磨促進劑與氧化劑,可更適宜地發揮研磨速率提高效果。
於此處所揭示的研磨用組成物之較佳一態樣中,前述研磨對象物之構成材料具有1500Hv以上的維氏硬度。於研磨對象材料為高硬度材料的研磨用組成物中,可更適宜地發揮本發明之應用效果。
於此處所揭示的研磨用組成物之較佳一態樣中,前述研磨對象物之構成材料為碳化矽。於研磨對象材料為碳化矽的研磨用組成物中,可更適宜地發揮本發明之應用效果。
又,依照本發明,提供一種研磨對象物之研磨方法。此研磨方法包含對於研磨對象物,供給此處所揭示的任一研磨用組成物,研磨該研磨對象物。藉由如此的研磨方法,可有效率地提供經研磨的研磨對象物(研磨物)。
實施發明的形態
以下,說明本發明之合適的實施形態。還有,於本說明書中,特別言及的事項以外之事物,本發明之實施所必要的事物,係本業者以該領域中的習知技術為基礎,可作為設計事項掌握者。本發明係可根據本說明書中揭示的內容與該領域中的技術常識而實施。
<研磨對象物> 此處所揭示的研磨用組成物係可適用於由在構成元素中不含氧的材料所成的研磨對象物之研磨。考量到藉由研磨對象物通過氧化劑而變質,且去除經變質的層來進行研磨,故研磨對象物較佳為未氧化的材料。研磨對象物之構成材料例如可為矽、鍺、鑽石等之單元素半導體或單元素絕緣體;氮化矽、氮化鉭、碳化鈦等之陶瓷材料;碲化鎘、硒化鋅、硫化鎘、碲化鎘汞、碲化鋅鎘等之IIB-VIB族(12-16族)化合物半導體基板材料;氮化鎵、砷化鎵、磷化鎵、磷化銦、砷化鋁鎵、砷化鎵銦、砷化氮銦鎵、磷化鋁鎵銦等之IIIB-VB族(13-15族)化合物半導體基板材料;碳化矽、矽化鍺等之IVB-IVB族(14-14族)化合物半導體基板材料等。於此等之中,亦可為由複數的材料所構成的研磨對象物。其中,較宜使用於具有500Hv以上的維氏硬度之材料的研磨。研磨對象材料的維氏硬度較佳為700Hv以上(例如1000Hv以上,典型上為1500Hv以上)。維氏硬度之上限係沒有特別的限定,但可大約7000Hv以下(例如5000 Hv以下,典型上為3000Hv以下)。還有,於本說明書中,維氏硬度係可根據JIS R 1610:2003測定。對應於上述JIS規格的國際規格為ISO 14705:2000。
作為具有1500Hv以上的維氏硬度之材料,可舉出鑽石、碳化矽、氮化矽、氮化鈦、氮化鎵等。此處所揭示的研磨用組成物係可對於機械且化學安定的上述材料之單結晶表面,較佳地適用。其中,研磨對象物表面較佳為由鑽石、碳化矽及氮化鎵之任一者所構成,更佳為由碳化矽所構成。碳化矽係被期待作為電力損失少、耐熱性等優異之半導體基板材料。改善其表面性質形狀之實用上的優點係特別大。此處所揭示的研磨用組成物係對於碳化矽的單結晶表面,特佳地適用。
<研磨用組成物> (金屬鹽A) 此處所揭示的研磨用組成物係特徵為含有選自由鹼金屬鹽及鹼土類金屬鹽所成之群組的至少1種金屬鹽A作為研磨促進劑。於拋光中,氧化劑係使研磨對象材料表面(尤其碳化矽等之高硬度材料表面)變質,該經變質的層係藉由與研磨墊之磨擦而被去除。該金屬鹽A係在解釋上沒有特別的限定,但考慮顯示能促進該變質與去除之觸媒作用,有助於研磨速率之提高者。金屬鹽A典型上較佳為包含鋰(Li)、鈉(Na)、鉀(K)、銣(Rb)、銫(Cs)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)中的任1種或2種以上。於此等之中,較佳為Na、K、Ca、Sr中的任一者,特佳為K或Ca。
上述金屬鹽A中的鹽之種類係沒有特別的限定,可為無機酸鹽,也可為有機酸鹽。例如,作為無機鹽,可舉出氫鹵酸(例如,鹽酸、氫溴酸、氫氟酸)、硝酸、硫酸、碳酸、矽酸、硼酸、磷酸等之鹽。又,作為有機鹽,可舉出羧酸(例如,甲酸、乙酸、丙酸、苯甲酸、甘胺酸、丁酸、檸檬酸、酒石酸、三氟乙酸)、有機磺酸(例如,甲磺酸、三氟甲烷磺酸、苯磺酸、甲苯磺酸)、有機膦酸(例如,甲基膦酸、苯膦酸、甲苯膦酸)、有機磷酸(例如,乙基磷酸)等之鹽。其中,較佳為鹽酸鹽或硝酸鹽,特佳為硝酸鹽。
作為金屬鹽A之具體例,可舉出由氯化鋰、氯化鈉、氯化鉀、氯化鎂、氯化鈣、氯化鍶、氯化鋇等之氯化物;溴化鈉、溴化鉀、溴化鎂等之溴化物;氟化鋰、氟化鈉、氟化鉀、氟化鎂、氟化鈣、氟化鍶、氟化鋇等之氟化物;硝酸鋰、硝酸鈉、硝酸鉀、硝酸鎂、硝酸鈣、硝酸鍶、硝酸鋇等之硝酸鹽;硫酸鋰、硫酸鈉、硫酸鉀、硫酸鎂、硫酸鈣、硫酸鍶、硫酸鋇等之硫酸鹽;碳酸鉀、碳酸氫鉀、碳酸鈉、碳酸氫鈉、碳酸鎂、碳酸鈣、碳酸鍶、碳酸鋇等之碳酸鹽;硼酸鈉等之硼酸鹽;醋酸鉀、醋酸鈉、醋酸鈣、醋酸鍶等之醋酸鹽之任一者實質上所構成的金屬鹽A。上述金屬鹽A係可單獨1種使用,也可組合2種以上使用。
金屬鹽A係可溶解於研磨用組成物中,也可以固體直接分散。即,金屬鹽A係可為水溶性,也可為非水溶性。又,於研磨用組成物中,亦可金屬鹽A的一部分溶解,剩餘者以固體直接分散。於較佳的一態樣中,金屬鹽A為水溶性之鹽。使用水溶性的金屬鹽A,由於研磨用組成物實質上不含固體物,可高效率地形成刮痕等的凹窪缺陷及以形態觀察無法檢測出的潛在傷痕等之缺陷少的良好表面。又,於較佳的一態樣中,金屬鹽A係可為溶解於水且顯示中性範圍的鹽(典型上藉由強酸與強鹼之中和而生成的正鹽)。藉由使用水溶液顯示中性範圍(例如pH6~8,較佳為pH6.5~7.5)的金屬鹽A,可高效率地形成刮痕等的缺陷經進一步減低之高品質表面。作為水溶液顯示中性的金屬鹽A,例如可舉出氯化鈉、氯化鉀、氯化鈣、氯化鍶等之氯化物,及硝酸鈉、硝酸鉀、硝酸鈣、硝酸鍶等之硝酸鹽。其中,氯化鈣、氯化鍶、硝酸鉀、硝酸鈣及硝酸鍶由於可高效率地形成良好的表面而較宜。其中,特佳為氯化鈣、硝酸鈣。 再者,本說明書中所言之「以形態觀察所無法檢測出的潛在傷痕」,就是典型上指藉由LASERTEC股份有限公司製的SiC晶圓缺陷檢査/檢視裝置(型式:SICA6X)之觀察無法檢測出的傷痕。上述潛在傷痕例如可藉由原子力顯微鏡(AFM)裝置的10μm´10μm之視野角的觀察而檢測出。
研磨用組成物中之金屬鹽A的濃度(含量)C1係沒有特別的限制,通常10莫耳/升以下為適當。藉由減小金屬鹽A的濃度C1,能以更高的水準實現研磨對象材料(尤其高硬度材料)表面之研磨速率提高效果。從研磨效率等之觀點來看,上述濃度C1宜設為10莫耳/升以下,較佳設為8莫耳/升以下,更佳設為6莫耳/升以下(例如3莫耳/升以下或1.5莫耳/升以下)。上述濃度C1之下限只要高於0 (零),則沒有特別的限制,但從容易發揮本發明的效果之觀點來看,通常宜設為0.0001莫耳/升以上,較佳為0.0005莫耳/升以上,更佳為0.001莫耳/升以上,尤佳為0.003莫耳/升以上。上述濃度C1例如亦可為0.005莫耳/升以上,典型上可為0.01莫耳/升以上(例如0.03莫耳/升以上)。此處所揭示之技術例如可以研磨用組成物中之金屬鹽A的濃度C1為0.0002莫耳/升~5莫耳/升之態樣,較佳地實施。
(氧化劑) 此處所揭示之研磨用組成物係除了上述金屬鹽A,還包含氧化劑。氧化劑係在拋光中,於與研磨對象物表面之間發生氧化反應,能有效帶來該表面之低硬度化、脆弱化。藉由組合該氧化劑與金屬鹽A而使用,可更有效果地提高研磨速率。氧化劑只要是具有充分的氧化還原電位,能發揮將研磨對象物表面予以氧化之作用的物質,則沒有特別的限定。例如,氧化劑可為在與實施研磨的pH即研磨組成物相同之pH中,具有比研磨對象材料的氧化還原電位較高的氧化還原電位之物質。另一方面,例如,金屬鹽A可為在與實施研磨的pH即研磨組成物相同之pH中,具有比研磨對象材料的氧化還原電位較低的氧化還原電位之物質。再者,研磨對象材料的氧化還原電位係可採用:使該材料的粉末分散於水中而成為漿料,將該漿料調整至與研磨用組成物相同的pH後,使用市售的氧化還原電位計,測定該漿料的氧化還原電位(相對於在液溫25℃的標準氫電極而言之氧化還原電位)之值。
作為氧化劑之具體例,可舉出過氧化氫等之過氧化物;硝酸、其鹽的硝酸鐵、硝酸銀、硝酸鋁、其錯合物的硝酸鈰銨等之硝酸化合物;過氧一硫酸、過氧二硫酸等之過硫酸、其鹽的過硫酸銨、過硫酸鉀等之過硫酸化合物;氯酸或其鹽、過氯酸、其鹽的過氯酸鉀等之氯化合物;溴酸、其鹽的溴酸鉀等之溴化合物;碘酸、其鹽的碘酸銨、過碘酸、其鹽的過碘酸鈉、過碘酸鉀等之碘化合物;鐵酸、其鹽的鐵酸鉀等之鐵酸類;過錳酸、其鹽的過錳酸鈉、過錳酸鉀等之過錳酸類;鉻酸、其鹽的鉻酸鉀、二鉻酸鉀等之鉻酸類;釩酸、其鹽的釩酸銨、釩酸鈉、釩酸鉀等之釩酸類;過釕酸或其鹽等之釕酸類;鉬酸、其鹽的鉬酸銨、鉬酸二鈉等之鉬酸類;過錸酸或其鹽等之錸酸類;鎢酸、其鹽的鎢酸二鈉等之鎢酸類。此等係可單獨1種使用,也可適當組合2種以上而使用。
於較佳的一態樣中,研磨用組成物包含複合金屬氧化物作為氧化劑。作為上述複合金屬氧化物,可舉出硝酸金屬鹽、鐵酸類、過錳酸類、鉻酸類、釩酸類、釕酸類、鉬酸類、錸酸類、鎢酸類。其中,較佳為鐵酸類、過錳酸類、鉻酸類,更佳為過錳酸類。
於更佳的一態樣中,作為上述複合金屬氧化物,可使用具有1價或2價的金屬元素(惟,不包括過渡金屬元素)與週期表的第4週期過渡金屬元素之複合金屬氧化物。作為上述1價或2價的金屬元素之合適例,可舉出Na、K、Mg、Ca。其中,較佳為Na、K。作為週期表的第4週期過渡金屬元素之合適例,可舉出Fe、Mn、Cr、V、Ti。其中,較佳為Fe、Mn、Cr,更佳為Mn。
研磨用組成物中之氧化劑的濃度(含量)C2通常0.001莫耳/升以上為適當。從高度且有效率地兼備研磨速率與平坦性之觀點來看,上述濃度C2較佳為0.005莫耳/升以上,更佳為0.01莫耳/升以上(例如0.05莫耳/升以上)。又,從平滑性提高之觀點來看,上述氧化劑的濃度C2通常10莫耳/升以下為適當,較佳設為5莫耳/升以下,更佳設為3莫耳/升以下(例如1莫耳/升以下或0.5莫耳/升以下)。此處所揭示之技術例如可以研磨用組成物之氧化劑的濃度C2為0.07莫耳/升~0.3莫耳/升之態樣,較佳地實施。
雖然沒有特別的限定,但是從更良好地發揮因併用氧化劑與金屬鹽A所致的效果之觀點來看,研磨用組成物中之金屬鹽A的濃度(包含複數的金屬鹽A時,為彼等之合計濃度)C1[莫耳/升]與氧化劑的濃度(包含複數的氧化劑時,為彼等之合計濃度)C2[莫耳/升]之比(C1/C2)較佳為約100以下。上述C1/C2較佳為70以下,更佳為30以下,尤佳為10以下,特佳為1以下。若為如此的金屬鹽A與氧化劑的濃度之比(C1/C2),則可更適宜地發揮研磨速率提高效果。C1/C2之下限只要高於0(零),則沒有特別的限定,但從更容易發揮本發明的效果之觀點來看,較佳為0.001以上,更佳為0.002以上,尤佳為0.003以上。上述C1/C2例如可為0.01以上,典型可為0.02以上(例如0.03以上)。
此處所揭示之研磨用組成物係實質上不含研磨粒。此係因為若在研磨用組成物中含有研磨粒,則可能於研磨後之研磨對象物表面,發生刮痕等之凹窪缺陷及以形態觀察所無法檢測出的潛在傷痕之發生、研磨粒之殘留、研磨粒之穿刺缺陷等,因此表面品質會降低。又,可能因研磨粒而研磨裝置受到損傷。作為此處所言的研磨粒之具體例,可舉出氧化鋁研磨粒、矽石研磨粒、鑽石研磨粒、氧化鈰研磨粒、氧化鉻研磨粒等。再者,所謂研磨用組成物實質上不含研磨粒者,就是指至少不意圖地含有研磨粒。
(其他成分) 此處所揭示之研磨用組成物係在不損害本發明的效果之範圍內,可視需要進一步含有螯合劑、增黏劑、分散劑、表面保護劑、潤濕劑、pH調整劑、界面活性劑、有機酸、無機酸、防鏽劑、防腐劑、防黴劑等之研磨用組成物(典型上為高硬度材料研磨用組成物,例如碳化矽基板拋光用組成物)中可用之眾所周知的添加劑。上述添加劑之含量係可按照其添加目的而適宜設定,由於不是本發明之特徵者,詳細的說明係省略。
(溶劑) 研磨用組成物中所用的溶劑,只要能使金屬鹽A及氧化劑分散即可,並沒有特別的限制。作為溶劑,可較宜使用離子交換水(去離子水)、純水、超純水、蒸餾水等。此處所揭示之研磨用組成物視需要亦可進一步含有能與水均勻混合的有機溶劑(低級醇、低級酮等)。通常研磨用組成物中所含有的溶劑之90體積%以上為水係較佳,95體積%以上(典型上為99~100體積%)為水係更佳。
研磨用組成物之pH通常2~12左右為適當。若研磨用組成物的pH為上述範圍內,則容易達成實用的研磨速率。從更良好地發揮此處所揭示之技術的適用效果之觀點來看,研磨用組成物之pH較佳為3以上,更佳為4以上,尤佳為5.5以上。pH之上限係沒有特別的限定,較佳為12以下,更佳為10以下,尤佳為9.5以下。上述pH較佳為3~11,更佳為4~10,尤佳為5.5~9.5。雖然解釋上沒有特別的限定,但若pH為5.5~9.5之範圍內,則認為金屬鹽A中的陽離子與陰離子之兩者有助於研磨速率提高。因此,依照此處所揭示之技術,於pH為5.5~9.5且無研磨粒的研磨用組成物中,可實現比以往較高的研磨速率。又,如此的研磨用組成物係對於研磨裝置的傷害少,可容易操作者。研磨用組成物之pH例如為9以下,典型上可為7.5以下。
<研磨用組成物之調製> 此處所揭示之研磨用組成物之製造方法係沒有特別的限定。例如,可使用翼式攪拌機、超音波分散機、均質機等周知的混合裝置,混合研磨用組成物中所含有的各成分。混合此等成分之態樣係沒有特別的限定。例如,可一次混合全部成分,也可依適宜設定的順序進行混合。
此處所揭示之研磨用組成物係可為一劑型,也可為以二劑型為首的多劑型。例如,可混合包含該研磨用組成物之構成成分(典型上為溶劑以外之成分)中一部分的成分之A液與包含剩餘的成分之B液,以使用於研磨對象物之研磨的方式構成。
<濃縮液> 此處所揭示之研磨用組成物亦可在供給至研磨對象物之前為經濃縮之形態(即,研磨液的濃縮液之形態)。如此經濃縮的形態之研磨用組成物,從製造、流通、保存等時的便利性或成本減低等之觀點來看為有利。濃縮倍率例如以體積換算可為2倍~5倍左右。
如此地濃縮液之形態的研磨用組成物,係可在所欲的時機進行稀釋而調製研磨液,以供給至研磨對象物之態樣使用該研磨液。上述稀釋典型上係可藉由在上述濃縮液中添加前述的溶劑,混合而進行。又,當上述溶劑為混合溶劑時,可僅添加該溶劑之構成成分中一部分的成分而稀釋,也可添加以與上述溶劑不同的量比含有彼等的構成成分之混合溶劑而稀釋。另外,如後述地於多劑型的研磨用組成物中,可在將彼等中一部分的劑稀釋後,混合其他劑而調製研磨液,也可在混合複數的劑後,稀釋其混合物而調製研磨液。
<研磨方法> 此處所揭示之研磨用組成物例如係藉由包含以下的操作之態樣,使用於研磨對象物之研磨。 即,準備包含此處所揭示的任一研磨用組成物之研磨液。為了準備上述研磨液,可包含對於研磨用組成物,施加濃度調整(例如稀釋)、pH調整等之操作,調製研磨液。或者,亦可將上述研磨用組成物直接使用作為研磨液。又,於多劑型的研磨用組成物時,為了準備上述研磨液,可包含混合彼等之劑者、於該混合之前稀釋1個或複數的劑者、於該混合之後稀釋其混合物者等。 接著,將該研磨液供給至研磨對象物表面,藉由常見方法進行研磨。例如,於一般的研磨裝置上設置研磨對象物,通過該研磨裝置的研磨墊,將上述研磨液供給至該研磨對象物之表面(研磨對象面)。典型上,一邊連續地供給上述研磨液,一邊將研磨墊推壓至研磨對象物的表面,使兩者相對地移動(例如旋轉移動)。經過該拋光步驟,完成研磨對象物之研磨。
依照此說明書,提供將研磨對象材料予以研磨之研磨方法及使用該研磨方法的研磨物之製造方法。上述研磨方法係特徵為包含使用此處所揭示之研磨用組成物,研磨研磨對象物之步驟。較佳的一態樣之研磨方法包含進行預備拋光之步驟(預備拋光步驟)與進行完工拋光之步驟(完工拋光步驟)。此處所言的預備拋光步驟,就是對於研磨對象物,進行預備拋光之步驟。於典型的一態樣中,預備拋光步驟係配置在將要完工拋光步驟之前的拋光步驟。預備拋光步驟係可為1段的拋光步驟,也可為2段以上的複數段之拋光步驟。又,此處所言之完工拋光步驟,就是對於已進行預備拋光的研磨對象物,進行完工拋光之步驟,指於使用拋光用組成物進行的拋光步驟之中最後(即,在最下游側)配置的研磨步驟。如此地於包含預備拋光步驟與完工拋光步驟之研磨方法中,此處所揭示之研磨用組成物係可在預備拋光步驟中使用,亦可在完工拋光步驟中使用,也可在預備拋光步驟及完工拋光步驟之兩者中使用。
於較佳的一態樣中,使用上述研磨用組成物之拋光步驟係完工拋光步驟。此處所揭示之研磨用組成物,由於無研磨粒,可有效果地減低在研磨後之表面中刮痕等之凹窪缺陷及以形態觀察所無法檢測出的潛在傷痕,因此可特佳使用作為研磨對象材料表面之完工拋光步驟中所用的研磨用組成物(完工拋光用組成物)。
於其他較佳的一態樣中,使用上述研磨用組成物之拋光步驟係可為預備拋光步驟。此處所揭示之研磨用組成物,由於可實現高的研磨速率,故適合作為研磨對象材料表面之預備拋光步驟中所用的研磨用組成物(預備拋光用組成物)。當預備拋光步驟包含2段以上的複數段之拋光步驟時,亦可彼等之中2段以上的拋光步驟使用此處所揭示之任一研磨用組成物而實施。此處所揭示之研磨用組成物可較佳地適用於前段(上游側)之預備拋光。例如,於經過後述的研磨步驟之最初的預備拋光步驟(典型上為1次研磨步驟)中,亦可較佳地使用。
預備拋光及完工拋光亦可適用於單面研磨裝置的研磨、兩面研磨裝置的研磨之任一者。於單面研磨裝置中,於陶瓷板上以蠟貼附研磨對象物,或使用被稱為載體的保持具來保持研磨對象物,藉由一邊供給拋光用組成物一邊將研磨墊推壓至研磨對象物的單面,使兩者相對地移動(例如旋轉移動),而將研磨對象物的單面予以研磨。於兩面研磨裝置中,使用被稱為載體的保持具來保持研磨對象物,一邊從上方來供給拋光用組成物,一邊將研磨墊推壓至研磨對象物的對向面,藉由使彼等在相對方向中旋轉,而同時地研磨研磨對象物之兩面。
此處所揭示的各拋光步驟中使用的研磨墊係沒有特別的限定。例如,可使用不織布型、麂皮型、硬質發泡聚胺甲酸酯型、含有研磨粒者、不含研磨粒者等之任一者。
經由此處揭示之方法所研磨的研磨物,係典型上在拋光後被洗淨。此洗淨係可使用適當洗淨液進行。所使用的洗淨液係沒有特別的限定,可適宜選擇眾所周知慣用者而使用。
還有,此處所揭示之研磨方法係除了上述預備拋光步驟及完工拋光步驟,還可包含任意的其他步驟。作為如此的步驟,可舉出在預備拋光步驟之前進行的研磨步驟。上述研磨步驟例如係藉由將研磨壓盤(例如鑄鐵壓盤)之表面推壓至研磨對象物,而進行研磨對象物的研磨之步驟。因此,於研磨步驟中不使用研磨墊。研磨步驟典型上係將研磨粒(典型上為鑽石研磨粒)供給至研磨壓盤與研磨對象物之間而進行。又,此處所揭示之研磨方法係可在預備拋光步驟之前,或在預備拋光步驟與完工拋光步驟之間,包含追加的步驟(洗淨步驟或拋光步驟)。
<研磨物之製造方法> 於此處所揭示之技術中,可包括提供:包含使用上述研磨用組成物的拋光步驟之研磨物之製造方法(例如碳化矽基板之製造方法)及藉由該方法所製造之研磨物。即,依照此處所揭示之技術,提供研磨物之製造方法及藉由該方法所製造之研磨物,該製造方法包含對於由研磨對象材料所構成的研磨對象物,供給此處所揭示之任一研磨用組成物,研磨該研磨對象物。上述製造方法係可藉由適宜地應用此處所揭示的任一研磨方法之內容而實施。依照上述製造方法,可有效率地提供研磨物(例如碳化矽基板)。 實施例
以下,說明與本發明有關的幾個實施例,但不意圖將本發明限定於實施例所示者。還有,於以下的說明中,「%」只要沒有特別預先指明,則以重量基準。
<研磨用組成物之調製> (實施例1~17) 混合作為研磨促進劑的金屬鹽A、作為氧化劑的過錳酸鉀(KMnO4
)與去離子水,調製實施例1~17之研磨用組成物。又,對於實施例1、3、5,藉由氫氧化鉀(KOH)進行pH調整。
(比較例1) 除了不使用金屬鹽A以外,以與實施例1相同之程序,調製研磨用組成物。
(比較例2) 除了使用氧化鋁研磨粒作為研磨粒,且不使用金屬鹽A以外,以與實施例17相同之程序,調製研磨用組成物。上述氧化鋁研磨粒之根據BET法所求出的平均粒徑(比表面積換算粒徑)為0.5μm。又,於比較例2之研磨用組成物中,相對於研磨用組成物全體,上述氧化鋁研磨粒的濃度為6重量%。
對於各例之研磨組成物,表1及表2中彙總顯示所使用的金屬鹽A之種類及濃度C1、氧化劑之種類及濃度C2、濃度比C1/C2、pH調整劑之種類、pH。
<研磨速率之評價> 將所準備的實施例1~16及比較例1之研磨用組成物直接使用作為研磨液,對於使用含有氧化鋁研磨粒的研磨液預先實施預備拋光後的SiC晶圓之表面,於下述之條件下實施拋光。而且,依照以下的計算式(1)、(2)算出研磨速率。表1之相當欄中顯示結果。 (1)研磨切削量[cm]=研磨前後的SiC晶圓之重量差[g]/SiC的密度[g/cm3
](=3.21g/cm3
)/研磨對象面積[cm2
](= 19.62cm2
) (2)研磨速率[nm/h]=研磨切削量[cm]´107
/研磨時間(=0.5小時) [拋光條件] 研磨裝置:日本ENGIS公司製的單面研磨裝置,型式「EJ-380IN-CH」 研磨墊:Nitta-Haas公司製「SUBA800XY」 研磨壓力:29.4kPa 壓盤旋轉數:80轉/分鐘 研磨時間:1小時 頭旋轉數:40轉/分鐘 研磨液的供給速率:20ml/分鐘(溢流) 研磨液的溫度:25℃ 研磨對象物:SiC晶圓(傳導型:n型,結晶型4H-SiC (0001面))2吋×3片
如表1中所示,組合使用金屬鹽A與氧化劑的實施例1~16之研磨用組成物,係研磨速率比單獨使用氧化劑的比較例1較高。由此結果可確認,藉由組合使用金屬鹽A與氧化劑,可提高研磨速率。再者,雖然於表1中省略,但組合使用硝酸鈣與氧化劑且將pH設為5.8的實施例6之研磨用組成物,係研磨速率比組合使用硝酸與氧化劑且將pH設為2的研磨用組成物較高。
<研磨後的表面之評價> 將所準備的實施例17及比較例2之研磨用組成物直接使用作為研磨液,對於使用含有氧化鋁研磨粒的研磨液預先實施預備拋光後的SiC晶圓之表面,於下述之條件下實施拋光。又,評價拋光後的SiC晶圓之表面狀態。表2之相當欄中顯示評價結果。 [拋光條件] 研磨裝置:不二越機械工業股份有限公司,型式「PDP-500」 研磨墊:Nitta-Haas公司製「SUBA800XY」 研磨壓力:29.4kPa 壓盤旋轉數:100轉/分鐘 研磨時間:1小時 頭旋轉數:100轉/分鐘 研磨液的供給速率:20ml/分鐘(溢流) 研磨液的溫度:25℃ 研磨對象物:東麗・道康寧股份有限公司製上等級SiC晶圓(傳導型:n型,結晶型4H-SiC)4吋×1片 [研磨後的研磨對象物表面之評價條件] (刮痕等之凹窪缺陷評價) 評價裝置:LASERTEC股份有限公司製、SiC晶圓缺陷檢査/檢視裝置,型式「SICA6X」 評價值:B/W缺陷(Black and White缺陷(凹窪缺陷))數 (潛在傷痕之評價) 評價裝置:AFM裝置,Bruker製,型式「Dimensiion3100」 評價軟體:NanoscopeV 評價條件:以10μm´10μm的視野角進行評價 評價地方:4吋晶圓的中心、左部、右部、上部及下部之合計5點。其中上下左右的4點係在從晶圓的端部往中心部的2cm內側之位置。 評價值:在各評價地方所觀測之0.1nm~5nm的傷痕數之合計
如表2中所示,可知實施例17之研磨用組成物係B/W缺陷數比組合有氧化鋁研磨粒與氧化劑之組成物(比較例2)較減少,可減低刮痕等之凹窪缺陷。又,與比較例2比較下,可知實施例17之研磨用組成物係藉由AFM所觀測的傷痕數亦較減少,可減低以形態觀察所無法檢測出的潛在傷痕。由此結果可確認,藉由組合使用金屬鹽A與氧化劑,在pH為中性範圍的研磨用組成物中可一邊改善面質,一邊大幅提高研磨速率。
以上,詳細說明本發明之具體例,惟此等只不過是例示,而不限定申請專利範圍。於申請專利範圍記載之技術中,包含將以上例示的具體例予以各式各樣地變形、變更者。
Claims (6)
- 一種研磨用組成物,其係研磨對象物之研磨中所用的研磨用組成物,其 包含水、氧化劑與研磨促進劑,且不含研磨粒, 作為前述研磨促進劑,包含選自由鹼金屬鹽及鹼土類金屬鹽所成之群組的至少1種金屬鹽。
- 如請求項1之研磨用組成物,其pH為5.5以上。
- 如請求項1或2之研磨用組成物,其中前述研磨用組成物中之前述金屬鹽的濃度C1[莫耳/升]與前述氧化劑的濃度C2[莫耳/升]之比(C1/C2)為0.001~70之範圍內。
- 如請求項1~3中任一項之研磨用組成物,其中前述研磨對象物之構成材料具有1500Hv以上的維氏硬度。
- 如請求項1~4中任一項之研磨用組成物,其中前述研磨對象物之構成材料為碳化矽。
- 一種研磨方法,其包含將如請求項1~5中任一項之研磨用組成物供給至研磨對象物,研磨該研磨對象物。
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