CN110431210A - 研磨用组合物 - Google Patents
研磨用组合物 Download PDFInfo
- Publication number
- CN110431210A CN110431210A CN201880020117.2A CN201880020117A CN110431210A CN 110431210 A CN110431210 A CN 110431210A CN 201880020117 A CN201880020117 A CN 201880020117A CN 110431210 A CN110431210 A CN 110431210A
- Authority
- CN
- China
- Prior art keywords
- grinding
- polishing
- composition
- acid
- metal salt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 135
- 239000000203 mixture Substances 0.000 title claims abstract description 123
- 238000000227 grinding Methods 0.000 claims abstract description 180
- 150000003839 salts Chemical class 0.000 claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000006061 abrasive grain Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000007800 oxidant agent Substances 0.000 claims abstract description 33
- 230000001590 oxidative effect Effects 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- -1 alkali metal salt Chemical class 0.000 claims abstract description 11
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 5
- 150000001447 alkali salts Chemical class 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 34
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 21
- 239000002131 composite material Substances 0.000 claims 2
- 238000007517 polishing process Methods 0.000 description 35
- 239000002253 acid Substances 0.000 description 25
- 239000007788 liquid Substances 0.000 description 21
- 238000002360 preparation method Methods 0.000 description 21
- 230000007547 defect Effects 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 230000000694 effects Effects 0.000 description 12
- 231100000241 scar Toxicity 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 10
- 229910003460 diamond Inorganic materials 0.000 description 9
- 239000010432 diamond Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000003082 abrasive agent Substances 0.000 description 7
- 239000011575 calcium Substances 0.000 description 7
- 239000004615 ingredient Substances 0.000 description 7
- 230000033116 oxidation-reduction process Effects 0.000 description 7
- 229910052700 potassium Inorganic materials 0.000 description 7
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052791 calcium Inorganic materials 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical compound [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 description 6
- 150000007513 acids Chemical class 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 229910002651 NO3 Inorganic materials 0.000 description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 description 4
- 230000000877 morphologic effect Effects 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000001110 calcium chloride Substances 0.000 description 3
- 229910001628 calcium chloride Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005660 chlorination reaction Methods 0.000 description 3
- 150000001805 chlorine compounds Chemical class 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000002905 metal composite material Substances 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004323 potassium nitrate Substances 0.000 description 3
- 235000010333 potassium nitrate Nutrition 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 235000005979 Citrus limon Nutrition 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 239000012286 potassium permanganate Substances 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000004317 sodium nitrate Substances 0.000 description 2
- 235000010344 sodium nitrate Nutrition 0.000 description 2
- JQWHASGSAFIOCM-UHFFFAOYSA-M sodium periodate Chemical compound [Na+].[O-]I(=O)(=O)=O JQWHASGSAFIOCM-UHFFFAOYSA-M 0.000 description 2
- UBXAKNTVXQMEAG-UHFFFAOYSA-L strontium sulfate Chemical compound [Sr+2].[O-]S([O-])(=O)=O UBXAKNTVXQMEAG-UHFFFAOYSA-L 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- ODIGIKRIUKFKHP-UHFFFAOYSA-N (n-propan-2-yloxycarbonylanilino) acetate Chemical compound CC(C)OC(=O)N(OC(C)=O)C1=CC=CC=C1 ODIGIKRIUKFKHP-UHFFFAOYSA-N 0.000 description 1
- QLOKJRIVRGCVIM-UHFFFAOYSA-N 1-[(4-methylsulfanylphenyl)methyl]piperazine Chemical compound C1=CC(SC)=CC=C1CN1CCNCC1 QLOKJRIVRGCVIM-UHFFFAOYSA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical class [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 244000248349 Citrus limon Species 0.000 description 1
- 244000131522 Citrus pyriformis Species 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical compound [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- JMKATISBVVWRSS-UHFFFAOYSA-N OP(O)=O.CC1=CC=CC=C1 Chemical class OP(O)=O.CC1=CC=CC=C1 JMKATISBVVWRSS-UHFFFAOYSA-N 0.000 description 1
- QLZHNIAADXEJJP-UHFFFAOYSA-N Phenylphosphonic acid Chemical compound OP(O)(=O)C1=CC=CC=C1 QLZHNIAADXEJJP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 description 1
- UNTBPXHCXVWYOI-UHFFFAOYSA-O azanium;oxido(dioxo)vanadium Chemical compound [NH4+].[O-][V](=O)=O UNTBPXHCXVWYOI-UHFFFAOYSA-O 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- VSGNNIFQASZAOI-UHFFFAOYSA-L calcium acetate Chemical compound [Ca+2].CC([O-])=O.CC([O-])=O VSGNNIFQASZAOI-UHFFFAOYSA-L 0.000 description 1
- 239000001639 calcium acetate Substances 0.000 description 1
- 235000011092 calcium acetate Nutrition 0.000 description 1
- 229960005147 calcium acetate Drugs 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 235000011132 calcium sulphate Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- GATNOFPXSDHULC-UHFFFAOYSA-N ethylphosphonic acid Chemical compound CCP(O)(O)=O GATNOFPXSDHULC-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002497 iodine compounds Chemical class 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- YACKEPLHDIMKIO-UHFFFAOYSA-N methylphosphonic acid Chemical compound CP(O)(O)=O YACKEPLHDIMKIO-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical class [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- OCATYIAKPYKMPG-UHFFFAOYSA-M potassium bromate Chemical class [K+].[O-]Br(=O)=O OCATYIAKPYKMPG-UHFFFAOYSA-M 0.000 description 1
- 235000019396 potassium bromate Nutrition 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- XMXNVYPJWBTAHN-UHFFFAOYSA-N potassium chromate Chemical class [K+].[K+].[O-][Cr]([O-])(=O)=O XMXNVYPJWBTAHN-UHFFFAOYSA-N 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- FJVZDOGVDJCCCR-UHFFFAOYSA-M potassium periodate Chemical compound [K+].[O-]I(=O)(=O)=O FJVZDOGVDJCCCR-UHFFFAOYSA-M 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 235000019394 potassium persulphate Nutrition 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- UMPKMCDVBZFQOK-UHFFFAOYSA-N potassium;iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[K+].[Fe+3] UMPKMCDVBZFQOK-UHFFFAOYSA-N 0.000 description 1
- BQFYGYJPBUKISI-UHFFFAOYSA-N potassium;oxido(dioxo)vanadium Chemical compound [K+].[O-][V](=O)=O BQFYGYJPBUKISI-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- CMZUMMUJMWNLFH-UHFFFAOYSA-N sodium metavanadate Chemical compound [Na+].[O-][V](=O)=O CMZUMMUJMWNLFH-UHFFFAOYSA-N 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- RXSHXLOMRZJCLB-UHFFFAOYSA-L strontium;diacetate Chemical compound [Sr+2].CC([O-])=O.CC([O-])=O RXSHXLOMRZJCLB-UHFFFAOYSA-L 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/24—Acids; Salts thereof
- C08K3/26—Carbonates; Bicarbonates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/14—Peroxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/24—Acids; Salts thereof
- C08K3/26—Carbonates; Bicarbonates
- C08K2003/262—Alkali metal carbonates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本发明提供一种研磨用组合物,其能有效地提高研磨速率。根据本发明,提供一种用于对研磨对象材料进行研磨的研磨用组合物。该研磨用组合物包含水、氧化剂和研磨促进剂,且不含磨粒。作为研磨促进剂,包含选自由碱金属盐及碱土金属盐组成的组中的至少1种金属盐。
Description
技术领域
本发明涉及研磨用组合物。详细而言,涉及研磨对象材料的研磨中所用的研磨用组合物。本申请基于2017年3月23日申请的日本专利申请2017-57610号主张优先权,该申请的全部内容作为参照而并入到本说明书中。
背景技术
对于金刚石、蓝宝石(氧化铝)、碳化硅、碳化硼、碳化钨、氮化硅、氮化钛等研磨对象材料的表面,通常通过对研磨压盘供给金刚石磨粒而进行的打磨(lapping)来进行加工。然而,在使用金刚石磨粒的打磨中,由于划痕的产生、残留等,容易产生缺陷、变形。因此,正在研究在使用了金刚石磨粒的打磨后、或代替该打磨而进行的研磨(抛光,polishing),所述研磨使用研磨垫,向该研磨垫与研磨对象物之间供给研磨浆料而进行。作为公开这种现有技术的文献,可举出专利文献1~3。
现有技术文献
专利文献
专利文献1:国际公开第2013/051555号
专利文献2:日本专利申请公开2011-159998号公报
专利文献3:日本专利申请公开2012-253259号公报
发明内容
发明要解决的问题
近年来,关于碳化硅等研磨对象物表面的抛光中所用的研磨用组合物,从减少划痕等凹坑缺陷及以形态(morphology)观察所无法检测出的潜在伤痕等观点来看,要求尽量不使用磨粒。然而,若不使用磨粒,则有研磨速率(每单位时间去除研磨对象物的表面的量)降低的问题。关于这点,上述专利文献1中提出了通过在不含磨粒的研磨用组合物中对氧化剂等含有成分进行研究来改善研磨速率。然而,即使通过这样的技术,也不足以满足研磨速率相关的实用的要求水平,还有改善的余地。
本发明是鉴于上述情况而完成的。其主要目的在于提供一种研磨用组合物,所述研磨用组合物在研磨对象物的研磨中有效地提高研磨速率、能减少划痕等凹坑缺陷及以形态观察所无法检测出的潜在伤痕。相关的其他目的在于提供一种使用上述研磨用组合物来对研磨对象物进行研磨的方法。
用于解决问题的方案
根据本发明,提供一种研磨用组合物,其用于研磨对象物的研磨。该研磨用组合物包含水、氧化剂和研磨促进剂,且不含磨粒。作为前述研磨促进剂,包含选自由碱金属盐及碱土金属盐组成的组中的至少1种金属盐。通过如此使用包含碱金属盐和/或碱土金属盐的研磨用组合物作为研磨促进剂,对于不含磨粒的研磨用组合物,可大幅提高研磨速率。
此处公开的研磨用组合物的优选的一方式中,pH为5.5以上。pH处于上述范围的研磨用组合物中,可更适宜地发挥本发明的应用效果。
此处公开的研磨用组合物的优选的一方式中,前述研磨用组合物中的前述金属盐的浓度C1[摩尔/L]与前述氧化剂的浓度C2[摩尔/L]之比(C1/C2)为0.001~70的范围内。通过以成为特定的浓度比的方式组合使用上述研磨促进剂与氧化剂,可更适宜地发挥研磨速率提高效果。
此处公开的研磨用组合物的优选的一方式中,前述研磨对象物的构成材料具有1500Hv以上的维氏硬度。对于研磨对象材料为高硬度材料的研磨用组合物,可更适宜地发挥本发明的应用效果。
此处公开的研磨用组合物的优选的一方式中,前述研磨对象物的构成材料为碳化硅。对于研磨对象材料为碳化硅的研磨用组合物,可更适宜地发挥本发明的应用效果。
另外,根据本发明,提供一种研磨对象物的研磨方法。该研磨方法包括对研磨对象物供给此处公开的任意研磨用组合物来研磨该研磨对象物。通过所述研磨方法,可高效地提供经研磨的研磨对象物(研磨物)。
具体实施方式
以下,说明本发明的合适的实施方式。需要说明的是,在本说明书中,除特别提及的事项以外的本发明的实施所需的事项可以作为基于本领域的现有技术的本领域技术人员的公知常识来把握。本发明可以基于本说明书中公开的内容和本领域中的技术常识来实施。
<研磨对象物>
此处公开的研磨用组合物是可应用于由构成元素中不含氧的材料形成的研磨对象物的研磨。考虑到研磨对象物因氧化剂而变质、通过去除变质的层来推进研磨,故研磨对象物优选未氧化的材料。研磨对象物的构成材料例如可为硅、锗、金刚石等单元素半导体或单元素绝缘体;氮化硅、氮化钽、碳化钛等陶瓷材料;碲化镉、硒化锌、硫化镉、碲化镉汞、碲化锌镉等IIB-VIB族(12-16族)化合物半导体基板材料;氮化镓、砷化镓、磷化镓、磷化铟、砷化铝镓、砷化镓铟、砷化氮铟镓、磷化铝镓铟等IIIB-VB族(13-15族)化合物半导体基板材料;碳化硅、硅化锗等IVB-IVB族(14-14族)化合物半导体基板材料等。也可为由这些中的多种材料构成的研磨对象物。其中,优选用于具有500Hv以上的维氏硬度的材料的研磨。研磨对象材料的维氏硬度优选为700Hv以上(例如1000Hv以上,典型的为1500Hv以上)。维氏硬度的上限没有特别的限定,但可以为大约7000Hv以下(例如5000Hv以下,典型的为3000Hv以下)。需要说明的是,在本说明书中,维氏硬度可以基于JIS R 1610:2003来测定。对应于上述JIS标准的国际标准为ISO 14705:2000。
作为具有1500Hv以上的维氏硬度的材料,可举出金刚石、碳化硅、氮化硅、氮化钛、氮化镓等。此处公开的研磨用组合物可优选应用于机械上且化学上稳定的上述材料的单晶表面。其中,研磨对象物表面优选由金刚石、碳化硅及氮化镓之中任意者构成,更优选由碳化硅构成。碳化硅作为功率损耗少、耐热性等优异的半导体基板材料而受到期待。改善其表面性状在实用上的优点特别大。此处公开的研磨用组合物特别优选应用于碳化硅的单晶表面。
<研磨用组合物>
(金属盐A)
此处公开的研磨用组合物的特征为,作为研磨促进剂,含有选自由碱金属盐及碱土金属盐组成的组中的至少1种金属盐A。在抛光中,氧化剂使研磨对象材料表面(尤其碳化硅等高硬度材料表面)变质,该变质的层通过与研磨垫的磨擦而被去除。该金属盐A不特别作限定性解释,但认为会表现促进该变质和去除的催化作用,有助于研磨速率的提高。金属盐A典型的优选包含锂(Li)、钠(Na)、钾(K)、铷(Rb)、铯(Cs)、镁(Mg)、钙(Ca)、锶(Sr)、钡(Ba)中的任1种或2种以上。这些当中,优选Na、K、Ca、Sr中的任一者,特别优选K或Ca。
上述金属盐A中的盐的种类没有特别限定,可为无机酸盐,也可为有机酸盐。例如,作为无机盐,可举出氢卤酸(例如,盐酸、氢溴酸、氢氟酸)、硝酸、硫酸、碳酸、硅酸、硼酸、磷酸等的盐。另外,作为有机盐,可举出羧酸(例如,甲酸、乙酸、丙酸、苯甲酸、甘氨酸、丁酸、柠檬酸、酒石酸、三氟乙酸)、有机磺酸(例如,甲磺酸、三氟甲磺酸、苯磺酸、甲苯磺酸)、有机膦酸(例如,甲基膦酸、苯膦酸、甲苯膦酸)、有机磷酸(例如,乙基磷酸)等的盐。其中,优选盐酸盐或硝酸盐,特别优选硝酸盐。
作为金属盐A的具体例,可举出由氯化锂、氯化钠、氯化钾、氯化镁、氯化钙、氯化锶、氯化钡等氯化物;溴化钠、溴化钾、溴化镁等溴化物;氟化锂、氟化钠、氟化钾、氟化镁、氟化钙、氟化锶、氟化钡等氟化物;硝酸锂、硝酸钠、硝酸钾、硝酸镁、硝酸钙、硝酸锶、硝酸钡等硝酸盐;硫酸锂、硫酸钠、硫酸钾、硫酸镁、硫酸钙、硫酸锶、硫酸钡等硫酸盐;碳酸钾、碳酸氢钾、碳酸钠、碳酸氢钠、碳酸镁、碳酸钙、碳酸锶、碳酸钡等碳酸盐;硼酸钠等硼酸盐;醋酸钾、醋酸钠、醋酸钙、醋酸锶等醋酸盐中的任意者实质上构成的金属盐A。上述金属盐A可单独使用1种,也可组合2种以上使用。
金属盐A可以溶解在研磨用组合物中,也可以保持固体状态而分散。即,金属盐A可为水溶性,也可为非水溶性。另外,在研磨用组合物中,也可以是金属盐A的一部分溶解,剩余的保持固体状态而分散。在优选的一方式中,金属盐A为水溶性的盐。通过使用水溶性的金属盐A而研磨用组合物实质上不含固体物质,从而可高效地形成划痕等凹坑缺陷及以形态观察无法检测出的潜在伤痕等缺陷少的良好表面。另外,在优选的一方式中,金属盐A可为溶解于水而显示中性范围的盐(典型的为通过强酸与强碱的中和而生成的正盐)。通过使用水溶液显示中性范围(例如pH6~8,优选为pH6.5~7.5)的金属盐A,可高效地形成划痕等缺陷进一步减少的高品质表面。作为水溶液显示中性的金属盐A,例如可举出氯化钠、氯化钾、氯化钙、氯化锶等氯化物,及硝酸钠、硝酸钾、硝酸钙、硝酸锶等硝酸盐。其中,氯化钙、氯化锶、硝酸钾、硝酸钙及硝酸锶由于可高效率形成良好的表面而优选。其中,特别优选氯化钙、硝酸钙。
需要说明的是,本说明书中所说的“以形态观察无法检测出的潜在伤痕”典型的是指通过利用LASERTEC CORPORATION制的SiC晶圆缺陷检査/检测装置(型号:SICA6X)的观察无法检测出的伤痕。上述潜在伤痕例如可通过利用原子力显微镜(AFM)装置的10μm×10μm的视角的观察而检测出。
研磨用组合物中的金属盐A的浓度(含量)C1没有特别的限制,通常设为10摩尔/L以下是适当的。通过减小金属盐A的浓度C1,能以更高的水平实现研磨对象材料(尤其高硬度材料)表面的研磨速率提高效果。从研磨效率等观点来看,上述浓度C1宜设为10摩尔/L以下,优选设为8摩尔/L以下,更优选设为6摩尔/L以下(例如3摩尔/L以下、或1.5摩尔/L以下)。上述浓度C1的下限只要高于0(零),则没有特别的限制,但从容易发挥本发明的效果的观点来看,通常宜设为0.0001摩尔/L以上,优选为0.0005摩尔/L以上,更优选0.001摩尔/L以上,进一步优选为0.003摩尔/L以上。上述浓度C1例如也可为0.005摩尔/L以上,典型的可为0.01摩尔/L以上(例如0.03摩尔/L以上)。此处公开的技术例如可优选以研磨用组合物中的金属盐A的浓度C1为0.0002摩尔/L~5摩尔/L的方式实施。
(氧化剂)
此处公开的研磨用组合物除了上述金属盐A以外还包含氧化剂。氧化剂在抛光中与研磨对象物表面之间发生氧化反应,能有效引起该表面的低硬度化、脆弱化。通过组合该氧化剂和金属盐A而使用,可更有效地提高研磨速率。氧化剂只要是具有足以发挥将研磨对象物表面氧化的作用的氧化还原电位的物质,则没有特别的限定。例如,氧化剂可以是在与实施研磨的pH即与研磨组合物相同的pH下具有比研磨对象材料的氧化还原电位高的氧化还原电位的物质。另一方面,例如,金属盐A可以是在与实施研磨的pH即与研磨组合物相同的pH下具有比研磨对象材料的氧化还原电位低的氧化还原电位的物质。需要说明的是,研磨对象材料的氧化还原电位可采用如下的值:使该材料的粉末分散在水中而成为浆料,将该浆料调整至与研磨用组合物相同的pH后,使用市售的氧化还原电位计,测定该浆料的氧化还原电位(相对于液温25℃下的标准氢电极的氧化还原电位)所得的值。
作为氧化剂的具体例,可举出过氧化氢等过氧化物;硝酸、作为其盐的硝酸铁、硝酸银、硝酸铝、作为其络合物的硝酸铈铵等硝酸化合物;过一硫酸、过二硫酸等过硫酸、作为其盐的过硫酸铵、过硫酸钾等过硫酸化合物;氯酸或其盐、高氯酸、作为其盐的高氯酸钾等氯化合物;溴酸、作为其盐的溴酸钾等溴化合物;碘酸、作为其盐的碘酸铵、高碘酸、作为其盐的高碘酸钠、高碘酸钾等碘化合物;铁酸、作为其盐的铁酸钾等铁酸类;高锰酸、作为其盐的高锰酸钠、高锰酸钾等高锰酸类;铬酸、作为其盐的铬酸钾、二铬酸钾等铬酸类;钒酸、作为其盐的钒酸铵、钒酸钠、钒酸钾等钒酸类;过钌酸或其盐等钌酸类;钼酸、作为其盐的钼酸铵、钼酸二钠等钼酸类;过铼酸或其盐等铼酸类;钨酸、作为其盐的钨酸二钠等钨酸类。这些可单独使用1种,也可适当组合2种以上而使用。
在优选的一方式中,研磨用组合物包含复合金属氧化物作为氧化剂。作为上述复合金属氧化物,可举出硝酸金属盐、铁酸类、高锰酸类、铬酸类、钒酸类、钌酸类、钼酸类、铼酸类、钨酸类。其中,优选为铁酸类、高锰酸类、铬酸类,更优选高锰酸类。
在更优选的一方式中,作为上述复合金属氧化物,可使用具有1价或2价的金属元素(其中,不包括过渡金属元素)及周期表的第4周期过渡金属元素的复合金属氧化物。作为上述1价或2价的金属元素的适宜的例子,可举出Na、K、Mg、Ca。其中,更优选Na、K。作为周期表的第4周期过渡金属元素的适宜的例子,可举出Fe、Mn、Cr、V、Ti。其中,更优选Fe、Mn、Cr,进一步优选Mn。
研磨用组合物中的氧化剂的浓度(含量)C2通常设为0.001摩尔/L以上是适当的。从高度且有效地兼备研磨速率和平坦性的观点来看,上述浓度C2优选0.005摩尔/L以上,更优选0.01摩尔/L以上(例如0.05摩尔/L以上)。另外,从提高平滑性的观点来看,上述氧化剂的浓度C2通常设为10摩尔/L以下是适当的,优选设为5摩尔/L以下,更优选设为3摩尔/L以下(例如1摩尔/L以下、或0.5摩尔/L以下)。此处公开的技术例如可以优选以研磨用组合物的氧化剂的浓度C2为0.07摩尔/L~0.3摩尔/L的方式实施。
虽然没有特别的限定,但是从更良好地发挥组合使用氧化剂和金属盐A所带来的效果的观点来看,研磨用组合物中的金属盐A的浓度(包含多种金属盐A时,为它们的合计浓度)C1[摩尔/L]与氧化剂的浓度(包含多种氧化剂时,为它们的合计浓度)C2[摩尔/L]之比(C1/C2)优选为约100以下。上述C1/C2优选为70以下,更优选30以下,进一步优选为10以下,特别优选为1以下。若为这样的金属盐A与氧化剂的浓度之比(C1/C2),则可更适宜地发挥研磨速率提高效果。C1/C2的下限只要高于0(零),则没有特别的限定,从更容易发挥本发明的效果的观点来看,优选为0.001以上,更优选0.002以上,进一步优选为0.003以上。上述C1/C2例如可为0.01以上,典型的可为0.02以上(例如0.03以上)。
此处公开的研磨用组合物实质上不含磨粒。这是因为,若在研磨用组合物中含有磨粒,则可能在研磨后的研磨对象物表面产生划痕等凹坑缺陷及以形态观察无法检测出的潜在伤痕、发生磨粒的残留、产生磨粒的扎刺缺陷等,由此表面质量会降低。另外是因为,研磨装置可能因磨粒而受到损伤。作为此处所说的磨粒的具体例,可举出氧化铝磨粒、二氧化硅磨粒、金刚石磨粒、氧化铈磨粒、氧化铬磨粒等。需要说明的是,研磨用组合物实质上不含磨粒是指至少不有意地含有磨粒。
(其他成分)
此处公开的研磨用组合物在不损害本发明的效果的范围内可视需要进一步含有螯合剂、增稠剂、分散剂、表面保护剂、润湿剂、pH调节剂、表面活性剂、有机酸、无机酸、防锈剂、防腐剂、防霉剂等研磨用组合物(典型的为高硬度材料研磨用组合物,例如碳化硅基板抛光用组合物)中可用的公知的添加剂。上述添加剂的含量可按照其添加目的而适宜设定,由于不是本发明的特征,因此省略详细的说明。
(溶剂)
研磨用组合物中所用的溶剂只要能使金属盐A及氧化剂分散即可,并没有特别的限制。作为溶剂,可优选使用离子交换水(去离子水)、纯水、超纯水、蒸馏水等。此处公开的研磨用组合物视需要也可进一步含有能与水均匀混合的有机溶剂(低级醇、低级酮等)。通常优选研磨用组合物中所含有的溶剂的90体积%以上为水,更优选95体积%以上(典型的为99~100体积%)为水。
研磨用组合物的pH通常设为2~12左右是适当的。若研磨用组合物的pH为上述范围内,则容易达成实用的研磨速率。从更良好地发挥此处公开的技术的应用效果的观点来看,研磨用组合物的pH优选为3以上,更优选4以上,进一步优选为5.5以上。pH的上限没有特别的限定,优选为12以下,更优选10以下,进一步优选为9.5以下。上述pH优选为3~11,更优选4~10,进一步优选为5.5~9.5。虽然不特别作限定性解释,但认为若pH为5.5~9.5的范围内,则金属盐A中的阳离子和阴离子这两者有助于研磨速率提高。因此,依照此处公开的技术,pH为5.5~9.5且无磨粒的研磨用组合物与以往相比可实现更高的研磨速率。另外,这样的研磨用组合物对研磨装置造成的伤害少,可容易操作。研磨用组合物的pH例如为9以下,典型的可为7.5以下。
<研磨用组合物的制备>
此处公开的研磨用组合物的制造方法没有特别的限定。例如,使用叶片式搅拌机、超声波分散机、均质机等周知的混合装置,混合研磨用组合物中所含有的各成分即可。混合这些成分的方式没有特别的限定。例如,可一次混合全部成分,也可按照适宜设定的顺序进行混合。
此处公开的研磨用组合物是可为单组分型,也可为以双组分型为首的多组分型。例如,可以以将包含该研磨用组合物的构成成分(典型的为溶剂以外的成分)中一部分成分的A液与包含剩余的成分的B液混合而用于研磨对象物的研磨的方式构成。
<浓缩液>
此处公开的研磨用组合物也可以在供给至研磨对象物之前为经浓缩的形态(即,研磨液的浓缩液的形态)。这样经浓缩的形态的研磨用组合物从制造、流通、保存等时的便利性、降低成本等观点来看是有利的。浓缩倍率例如以体积换算计可设为2倍~5倍左右。
这样处于浓缩液的形态的研磨用组合物可以以在期望的时机进行稀释而制备研磨液并将该研磨用供给至研磨对象物的方式来使用。上述稀释典型的可通过在上述浓缩液中添加前述的溶剂并混合来进行。另外,上述溶剂为混合溶剂时,可仅添加该溶剂的构成成分中的一部分成分而稀释,也可添加以与上述溶剂不同的量比含有所述构成成分的混合溶剂而稀释。另外,如后述,对于多组分型的研磨用组合物,可以将其中一部分组分稀释后与其他组分混合而制备研磨液,也可以将多个组分混合后将其混合物稀释而制备研磨液。
<研磨方法>
此处公开的研磨用组合物例如可以以包括以下的操作的方式用于研磨对象物的研磨。
即,准备包含此处公开的任意研磨用组合物的研磨液。为了准备上述研磨液,可包括对研磨用组合物施加浓度调整(例如稀释)、pH调节等操作来制备研磨液。或者,也可将上述研磨用组合物直接用作研磨液。另外,在多组分型的研磨用组合物的情况下,为了准备上述研磨液,可包括混合所述组分、在该混合之前将1个组分或多个组分稀释、在该混合之后稀释其混合物等。
接着,将该研磨液供给至研磨对象物表面,通过常规方法进行研磨。例如,将研磨对象物设置在一般的研磨装置上,通过该研磨装置的研磨垫,将上述研磨液供给至该研磨对象物的表面(研磨对象面)。典型的,一边连续地供给上述研磨液,一边将研磨垫按压在研磨对象物的表面,使两者相对地移动(例如旋转移动)。经过该拋光工序,完成研磨对象物的研磨。
依照此说明书,提供对研磨对象材料进行研磨的研磨方法及使用该研磨方法的研磨物的制造方法。上述研磨方法特征为包括使用此处公开的研磨用组合物对研磨对象物进行研磨的工序。优选的一方式的研磨方法包括进行预备抛光的工序(预备抛光工序)和进行精加工抛光的工序(精加工抛光工序)。此处所说的预备抛光工序是对研磨对象物进行预备抛光的工序。在典型的一方式中,预备抛光工序是配置在即将要进行精加工抛光工序之前的抛光工序。预备抛光工序可以为1段的抛光工序,也可为2段以上的多段抛光工序。另外,此处所说的精加工抛光工序是对已进行了预备抛光的研磨对象物进行精加工抛光的工序,是指在使用抛光用组合物进行的抛光工序之中配置在最后(即,在最下游侧)的研磨工序。这样包括预备抛光工序和精加工抛光工序的研磨方法中,此处公开的研磨用组合物可在预备抛光工序中使用,也可在精加工抛光工序中使用,也可在预备抛光工序及精加工抛光工序这两者中使用。
在优选的一方式中,使用上述研磨用组合物的抛光工序是精加工抛光工序。此处公开的研磨用组合物通过设为无磨粒,可有效地减少研磨后的表面中的划痕等凹坑缺陷及以形态观察无法检测出的潜在伤痕,因此可以特别优选用作研磨对象材料表面的精加工抛光工序中所用的研磨用组合物(精加工抛光用组合物)。
又一优选的方式中,使用上述研磨用组合物的抛光工序可以为预备抛光工序。此处公开的研磨用组合物由于可实现高的研磨速率,因此适合作为研磨对象材料表面的预备抛光工序中所用的研磨用组合物(预备抛光用组合物)。当预备抛光工序包括2段以上的多段抛光工序时,可以使用此处公开的任意研磨用组合物来实施所述中2段以上的抛光工序。此处公开的研磨用组合物可优选地应用于前段(上游侧)的预备抛光。例如,在经过了后述打磨工序的最初的预备抛光工序(典型的为1次研磨工序)中,也可优选使用。
预备抛光及精加工抛光也可以应用利用单面研磨装置的研磨、利用两面研磨装置的研磨中的任意者。单面研磨装置中,用蜡将研磨对象物贴附在陶瓷板上,或使用被称为载体(carrier)的保持具来保持研磨对象物,一边供给抛光用组合物一边将研磨垫按压于研磨对象物的单面,使两者相对地移动(例如旋转移动),由此对研磨对象物的单面进行研磨。两面研磨装置中,使用被称为载体的保持具来保持研磨对象物,一边从上方供给抛光用组合物,一边将研磨垫按压于研磨对象物的相对面,使它们以相对方向旋转,由此同时对研磨对象物的两面进行研磨。
此处公开的各抛光工序中使用的研磨垫没有特别的限定。例如,可使用无纺布型、绒面革型、硬质发泡聚氨酯型、含有磨粒者、不含磨粒者等中的任意者。
通过此处公开的方法研磨的研磨物典型地在抛光后被清洗。该清洗可使用适当的清洗液进行。所使用的清洗液没有特别的限定,可适宜选择公知、惯用的清洗液而使用。
需要说明的是,此处公开的研磨方法除了上述预备抛光工序及精加工抛光工序以外还可以包含任意的其他工序。作为这样的工序,可举出在预备抛光工序之前进行的打磨工序。上述打磨工序为通过将研磨压盘(例如铸铁压盘)的表面按压于研磨对象物而进行研磨对象物的研磨的工序。因此,打磨工序中不使用研磨垫。打磨工序典型的是将磨粒(典型的为金刚石磨粒)供给至研磨压盘与研磨对象物之间而进行。另外,此处公开的研磨方法可在预备抛光工序之前、预备抛光工序与精加工抛光工序之间包括追加的工序(清洗工序或抛光工序)。
<研磨物的制造方法>
此处公开的技术中,可包含提供包括使用了上述研磨用组合物的抛光工序的研磨物的制造方法(例如碳化硅基板的制造方法)及通过该方法制造的研磨物。即,依照此处公开的技术,提供研磨物的制造方法及通过该方法制造的研磨物,该制造方法包括对由研磨对象材料构成的研磨对象物供给此处公开的任意研磨用组合物来研磨该研磨对象物。上述制造方法可通过适宜地应用此处公开的任意研磨方法的内容而实施。依照上述制造方法,可有效率地提供研磨物(例如碳化硅基板)。
实施例
以下,说明与本发明有关的几个实施例,但不意图将本发明限定于实施例所示者。需要说明的是,在以下的说明中,“%”只要没有特别说明,则为重量基准。
<研磨用组合物的制备>
(实施例1~17)
混合作为研磨促进剂的金属盐A、作为氧化剂的高锰酸钾(KMnO4)和去离子水,制备实施例1~17的研磨用组合物。另外,对于实施例1、3、5,通过氢氧化钾(KOH)进行pH调整。
(比较例1)
除了不使用金属盐A以外,以与实施例1相同的工序制备研磨用组合物。
(比较例2)
除了使用氧化铝磨粒作为磨粒,且不使用金属盐A以外,以与实施例17相同的工序制备研磨用组合物。上述氧化铝磨粒的基于BET法所求出的平均粒径(比表面积换算粒径)为0.5μm。另外,在比较例2的研磨用组合物中,相对于研磨用组合物整体,上述氧化铝磨粒的浓度为6重量%。
对于各例的研磨组合物,在表1及表2中汇总显示所使用的金属盐A的种类及浓度C1、氧化剂的种类及浓度C2、浓度比C1/C2、pH调节剂的种类、pH。
<研磨速率的评价>
将所准备的实施例1~16及比较例1的研磨用组合物直接用作研磨液,对于使用含有氧化铝磨粒的研磨液预先实施了预备抛光后的SiC晶圆的表面,在下述条件下实施抛光。接着,依照以下的计算式(1)、(2)算出研磨速率。在表1的该栏中示出结果。
(1)研磨切削量[cm]=研磨前后的SiC晶圆的重量差[g]/SiC的密度[g/cm3](=3.21g/cm3)/研磨对象面积[cm2](=19.62cm2)
(2)研磨速率[nm/h]=研磨切削量[cm]×107/研磨时间(=0.5小时)
[抛光条件]
研磨装置:日本ENGIS公司制的单面研磨装置,型号“EJ-380IN-CH”
研磨垫:Nitta-Haas公司制“SUBA800XY”
研磨压力:29.4kPa
压盘转速:80转/分钟
研磨时间:1小时
研磨头转速:40转/分钟
研磨液的供给速率:20ml/分钟(溢流,日语:掛け流し)
研磨液的温度:25℃
研磨对象物:SiC晶圆(传导型:n型,结晶型4H-SiC(0001面))2英寸×3片
[表1]
表1
如表1中所示,利用组合使用金属盐A和氧化剂的实施例1~16的研磨用组合物,研磨速率比单独使用氧化剂的比较例1高。由此结果可确认,通过组合使用金属盐A和氧化剂,可提高研磨速率。需要说明的是,虽然在表1中省略,但对于组合使用硝酸钙和氧化剂且将pH设为5.8的实施例6的研磨用组合物,研磨速率比组合使用硝酸和氧化剂且将pH设为2的研磨用组合物高。
<研磨后的表面的评价>
将所准备的实施例17及比较例2的研磨用组合物直接用作研磨液,对于使用含有氧化铝磨粒的研磨液预先实施了预备抛光后的SiC晶圆的表面,在下述条件下实施抛光。另外,评价抛光后的SiC晶圆的表面状态。在表2的该栏中示出评价结果。
[抛光条件]
研磨装置:不二越机械工业株式会社,型号“PDP-500”
研磨垫:Nitta-Haas公司制“SUBA800XY”
研磨压力:29.4kPa
压盘转速:100转/分钟
研磨时间:1小时
研磨头转速:100转/分钟
研磨液的供给速率:20ml/分钟(溢流)
研磨液的温度:25℃
研磨对象物:Dow Corning Toray Co.,Ltd.制最优级(Prime grade)SiC晶圆(传导型:n型,结晶型4H-SiC)4英寸×1片
[研磨后的研磨对象物表面的评价条件]
(划痕等凹坑缺陷评价)
评价装置:LASERTEC CORPORATION制、SiC晶圆缺陷检査/检测装置,型号“SICA6X”
评价值:B/W缺陷(Black and White缺陷(凹坑缺陷))数
(潜在伤痕的评价)
评价装置:AFM装置,Bruker制,型号“Dimensiion3100”
评价软件:NanoscopeV
评价条件:以10μm×10μm的视角进行评价
评价部位:4英寸晶圆的中心、左部、右部、上部及下部合计5点。其中上下左右这4点采用从晶圆的端部起向中心部2cm内侧的位置。
评价值:在各评价部位所观测的0.1nm~5nm的伤痕数的合计
[表2]
表2
如表2中所示,可知利用实施例17的研磨用组合物,与组合有氧化铝磨粒和氧化剂的组合物(比较例2)相比,B/W缺陷数减少,可减少划痕等凹坑缺陷。另外,与比较例2相比,利用实施例17的研磨用组合物,通过AFM观测的伤痕数也减少,可知可减少以形态观察无法检测出的潜在伤痕。由此结果可确认,通过组合使用金属盐A和氧化剂,在pH为中性范围的研磨用组合物中,可改善面质并且大幅提高研磨速率。
以上,详细说明了本发明的具体例,但这些只不过是例示,而不限定权利要求的保护范围。权利要求书中记载的技术中包含对以上例示的具体例进行各式各样的变形、变更而成者。
Claims (6)
1.一种研磨用组合物,其用于研磨对象物的研磨,
所述研磨用组合物包含水、氧化剂和研磨促进剂,且不含磨粒,
作为所述研磨促进剂,包含选自由碱金属盐及碱土金属盐组成的组中的至少1种金属盐。
2.根据权利要求1所述的研磨用组合物,其pH为5.5以上。
3.根据权利要求1或2所述的研磨用组合物,其中,所述研磨用组合物中的所述金属盐的浓度C1[摩尔/L]与所述氧化剂的浓度C2[摩尔/L]之比(C1/C2)为0.001~70的范围内。
4.根据权利要求1~3中任一项所述的研磨用组合物,其中,所述研磨对象物的构成材料具有1500Hv以上的维氏硬度。
5.根据权利要求1~4中任一项所述的研磨用组合物,其中,所述研磨对象物的构成材料为碳化硅。
6.一种研磨方法,其包括对研磨对象物供给权利要求1~5中任一项所述的研磨用组合物来研磨该研磨对象物。
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US20220089911A1 (en) | 2022-03-24 |
JPWO2018174008A1 (ja) | 2020-04-16 |
TW201842146A (zh) | 2018-12-01 |
EP3604475A1 (en) | 2020-02-05 |
EP3919576A1 (en) | 2021-12-08 |
WO2018174008A1 (ja) | 2018-09-27 |
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